DE2941908C2 - Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle - Google Patents
Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden SolarzelleInfo
- Publication number
- DE2941908C2 DE2941908C2 DE2941908A DE2941908A DE2941908C2 DE 2941908 C2 DE2941908 C2 DE 2941908C2 DE 2941908 A DE2941908 A DE 2941908A DE 2941908 A DE2941908 A DE 2941908A DE 2941908 C2 DE2941908 C2 DE 2941908C2
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- silicon layer
- producing
- solar cell
- gas atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 20
- 229910052710 silicon Inorganic materials 0.000 title claims description 19
- 239000010703 silicon Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 238000000034 method Methods 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Coating By Spraying Or Casting (AREA)
Description
20
Die Erfindung betrifft ein Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle, bei
dem das Silizium mit Hilfe von Lichtbogen-Spritzen oder Plasma-Spritzen in einer Gas-Atmosphäre auf einen
Träger aufgebracht wird.
Ein derartiges Verfahren ist aus der US-B 5 61 404 bekannt. Nach der Herstellung der Silizium-Schicht mit
Hilfe von Lichtbogen-Spritzen oder Plasma-Spritzen kann beim bekannten Verfahren eine Wärmebehandlung
des aufgebrachten Materials erfolgen.
Gegenstand der der DE-OS 29 24 584 entsprechenden älteren deutschen Patentanmeldung ist ein Verfahren
zur Herstellung von Silizium für Solarzellen, bei dem Siliziumdioxid oder Silizium mit höherem Verunrcinigungsgrad
in einer reduzierenden Gasatmosphäre in ein Plasma eingebracht wird. Ais reduzierende Gasatmosphäre
sollen Wasserstoff oder niedere gesättigte oder ungesättigte Kohlenwasserstoffe verwendet wer- |
den. 40 \
Aus »IBM Techn. Disci. Bull.«, Vol. 19. No. 10,
März 1977. Seiten 3955—6 ist es bekannt, Silizium- f
Schichten nach dem Aufbringen zur Verbesserung der Kristallinität aufzuschmelzen.
Der Erfindung liegt die Aufgabe zugrunde, bei einem Verfahren der eingangs genannten Art die Qualität der
Silizium-Schicht zu verbessern. Diese Aufgabe wird nach der Erfindung dadurch gelöst, daß das Silizium in
einer Gas-Atmosphäre aufgebracht wird, welche mit dem Silizium nur wenig, mit den Verunreinigungen im
Silizium jedoch stark reagiert. ύ
Zu diesem Zweck enthält die Lichtbogen- oder Plasm&a'Tnosphäre
beispielsweise Gase wie HCI. HF, CI2, h
oder S2. Durch Pulverisieren und Behandeln mit HCI
läßt sich Silizium-Pulver beispielsweise von Verunreinigungen wie metallischem Al, Mg oder Na befreien.
Gemäß einer Weiterbildung der Erfindung wird die $
Silizium-Schicht nach dem Aufbringen auf den Träger :'
mit Hilfe eines Lichtbogen-Strahls. Plasma-Strahls oder eines fokussierten Licht- oder LASER-Strahls kurzzeitig
aufgeschmolzen.
Claims (2)
1. Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle, bei dem das Silizium
mit Hilfe von Lichtbogen-Spritzen oder Plasma-Spritzen in einer Gas-Atmosphäre auf einen Träger
aufgebracht wird, dadurch gekennzeichnet,
daß das Silizium in einer Gas-Atmosphäre aufgebracht wird, weiche mit dem Silizium nur wenig,
mit den Verunreinigungen im Silizium jedoch stark reagiert.
2. Verfahren nach Anspruch 1, bei dem das Silizium nach dem Aufbringen einer Wärmebehandlung
unterzogen wird, dadurch gekennzeichnet, daß die Silizium-Schicht bei der Wärmebehandlung aufgeschmolzen
wird.
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2941908A DE2941908C2 (de) | 1979-10-17 | 1979-10-17 | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
JP465680A JPS5662378A (en) | 1979-10-17 | 1980-01-21 | Semiconductor layer solar battery and method of manufacturing same |
IT8025051A IT1132906B (it) | 1979-10-17 | 1980-10-01 | Cella solare a strato semiconduttore |
GB8031963A GB2061000A (en) | 1979-10-17 | 1980-10-03 | A semiconductor layer solar cell |
SE8007191A SE8007191L (sv) | 1979-10-17 | 1980-10-14 | Solcell med halvledarskikt |
NL8005707A NL8005707A (nl) | 1979-10-17 | 1980-10-16 | Zonnecel met halfgeleiderlaag. |
AU63415/80A AU6341580A (en) | 1979-10-17 | 1980-10-16 | Manufacture of semiconductor layer solar cell |
FR8022249A FR2468210A1 (fr) | 1979-10-17 | 1980-10-17 | Photopile semiconductrice multicouche et procede pour sa production |
US06/315,641 US4449286A (en) | 1979-10-17 | 1981-10-27 | Method for producing a semiconductor layer solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2941908A DE2941908C2 (de) | 1979-10-17 | 1979-10-17 | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2941908A1 DE2941908A1 (de) | 1981-04-30 |
DE2941908C2 true DE2941908C2 (de) | 1986-07-03 |
Family
ID=6083632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE2941908A Expired DE2941908C2 (de) | 1979-10-17 | 1979-10-17 | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
Country Status (3)
Country | Link |
---|---|
US (1) | US4449286A (de) |
JP (1) | JPS5662378A (de) |
DE (1) | DE2941908C2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4309319A1 (de) * | 1992-09-08 | 1994-03-10 | Mitsubishi Electric Corp | Dünnschichtsolarzelle und Herstellungsverfahren dazu, Verfahren zur Herstellung eines Halbleiterrohlings und Verfahren zur Herstellung eines Halbleitersubstrates |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2941908C2 (de) * | 1979-10-17 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
DE3446286A1 (de) * | 1984-12-19 | 1986-06-19 | Sigri GmbH, 8901 Meitingen | Verfahren zum beschichten von kohlenstoff- und graphitkoerpern |
US4848922A (en) * | 1988-04-22 | 1989-07-18 | The United States Of America As Represented By The United States Department Of Energy | Photon Calorimeter |
US5164040A (en) * | 1989-08-21 | 1992-11-17 | Martin Marietta Energy Systems, Inc. | Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets |
US5075257A (en) * | 1990-11-09 | 1991-12-24 | The Board Of Trustees Of The University Of Arkansas | Aerosol deposition and film formation of silicon |
US5464667A (en) * | 1994-08-16 | 1995-11-07 | Minnesota Mining And Manufacturing Company | Jet plasma process and apparatus |
US6203898B1 (en) * | 1997-08-29 | 2001-03-20 | 3M Innovatave Properties Company | Article comprising a substrate having a silicone coating |
US6620645B2 (en) * | 2000-11-16 | 2003-09-16 | G.T. Equipment Technologies, Inc | Making and connecting bus bars on solar cells |
US6635307B2 (en) | 2001-12-12 | 2003-10-21 | Nanotek Instruments, Inc. | Manufacturing method for thin-film solar cells |
US7074693B2 (en) * | 2003-06-24 | 2006-07-11 | Integrated Materials, Inc. | Plasma spraying for joining silicon parts |
US20080023070A1 (en) * | 2006-07-28 | 2008-01-31 | Sanjai Sinha | Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells |
US20080220558A1 (en) * | 2007-03-08 | 2008-09-11 | Integrated Photovoltaics, Inc. | Plasma spraying for semiconductor grade silicon |
JP4181204B1 (ja) * | 2007-05-11 | 2008-11-12 | 昭和シェル石油株式会社 | 太陽電池モジュール |
JP2011525301A (ja) * | 2008-06-11 | 2011-09-15 | インテバック・インコーポレイテッド | イオン注入装置及び半導体素子製造方法 |
US8545944B2 (en) * | 2008-09-19 | 2013-10-01 | Sri International | Method for producing solar grade films from semiconductor powders |
US20100104769A1 (en) * | 2008-10-23 | 2010-04-29 | Boisseau John E | Automotive coating surface enhancement using a plasma treatment technique |
US8253058B2 (en) * | 2009-03-19 | 2012-08-28 | Integrated Photovoltaics, Incorporated | Hybrid nozzle for plasma spraying silicon |
US20110162703A1 (en) * | 2009-03-20 | 2011-07-07 | Solar Implant Technologies, Inc. | Advanced high efficientcy crystalline solar cell fabrication method |
US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
FR2963337B1 (fr) * | 2010-07-30 | 2013-03-01 | Commissariat Energie Atomique | Recyclage de boues de sciage de silicium pour la preparation de lingots ou de plaques par plasma thermique |
US8816190B2 (en) * | 2011-04-18 | 2014-08-26 | First Solar, Inc. | Photovoltaic devices and method of making |
CN106847736B (zh) | 2011-11-08 | 2020-08-11 | 因特瓦克公司 | 基板处理系统和方法 |
MY185561A (en) * | 2011-11-18 | 2021-05-20 | First Solar Inc | Vapor transport deposition method and system for material co-deposition |
WO2014100506A1 (en) | 2012-12-19 | 2014-06-26 | Intevac, Inc. | Grid for plasma ion implant |
CN105671474B (zh) | 2016-03-18 | 2018-11-30 | 李光武 | 制造半导体基片的方法和装置 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US561405A (en) * | 1896-06-02 | Ice-velocipede | ||
NL49743C (de) * | 1930-08-08 | 1900-01-01 | ||
US2636855A (en) * | 1948-03-25 | 1953-04-28 | Hilger & Watts Ltd | Method of producing photoconductive coatings |
GB1297046A (de) * | 1969-08-25 | 1972-11-22 | ||
GB1356769A (en) * | 1973-03-27 | 1974-06-12 | Cit Alcatel | Apparatus and method for depositing thin layers on a substrate |
US3928092A (en) * | 1974-08-28 | 1975-12-23 | Bell Telephone Labor Inc | Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices |
US4003770A (en) * | 1975-03-24 | 1977-01-18 | Monsanto Research Corporation | Plasma spraying process for preparing polycrystalline solar cells |
US4161418A (en) * | 1975-06-27 | 1979-07-17 | Futaba Denshi Kogyo K. K. | Ionized-cluster-beam deposition process for fabricating p-n junction semiconductor layers |
US4059461A (en) * | 1975-12-10 | 1977-11-22 | Massachusetts Institute Of Technology | Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof |
US4078097A (en) * | 1976-07-09 | 1978-03-07 | International Prototypes, Inc. | Metallic coating process |
DE2644208C3 (de) * | 1976-09-30 | 1981-04-30 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer einkristallinen Schicht auf einer Unterlage |
JPS5399762A (en) * | 1977-02-12 | 1978-08-31 | Futaba Denshi Kogyo Kk | Device for producing compound semiconductor film |
FR2394173A1 (fr) * | 1977-06-06 | 1979-01-05 | Thomson Csf | Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede |
US4166880A (en) * | 1978-01-18 | 1979-09-04 | Solamat Incorporated | Solar energy device |
US4240842A (en) * | 1979-03-28 | 1980-12-23 | Solarex Corporation | Solar cell having contacts and antireflective coating |
DE2924584A1 (de) * | 1979-06-19 | 1981-01-15 | Straemke Siegfried | Verfahren zur herstellung von silicium fuer solarzellen |
DE2941908C2 (de) * | 1979-10-17 | 1986-07-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle |
DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
US4292342A (en) * | 1980-05-09 | 1981-09-29 | Motorola, Inc. | High pressure plasma deposition of silicon |
-
1979
- 1979-10-17 DE DE2941908A patent/DE2941908C2/de not_active Expired
-
1980
- 1980-01-21 JP JP465680A patent/JPS5662378A/ja active Pending
-
1981
- 1981-10-27 US US06/315,641 patent/US4449286A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4309319A1 (de) * | 1992-09-08 | 1994-03-10 | Mitsubishi Electric Corp | Dünnschichtsolarzelle und Herstellungsverfahren dazu, Verfahren zur Herstellung eines Halbleiterrohlings und Verfahren zur Herstellung eines Halbleitersubstrates |
Also Published As
Publication number | Publication date |
---|---|
DE2941908A1 (de) | 1981-04-30 |
US4449286A (en) | 1984-05-22 |
JPS5662378A (en) | 1981-05-28 |
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