IT1132906B - Cella solare a strato semiconduttore - Google Patents

Cella solare a strato semiconduttore

Info

Publication number
IT1132906B
IT1132906B IT8025051A IT2505180A IT1132906B IT 1132906 B IT1132906 B IT 1132906B IT 8025051 A IT8025051 A IT 8025051A IT 2505180 A IT2505180 A IT 2505180A IT 1132906 B IT1132906 B IT 1132906B
Authority
IT
Italy
Prior art keywords
solar cell
semiconductive layer
layer solar
semiconductive
cell
Prior art date
Application number
IT8025051A
Other languages
English (en)
Other versions
IT8025051A0 (it
Inventor
Reinhard Dahlberg
Original Assignee
Licentia Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2941908A external-priority patent/DE2941908C2/de
Application filed by Licentia Gmbh filed Critical Licentia Gmbh
Publication of IT8025051A0 publication Critical patent/IT8025051A0/it
Application granted granted Critical
Publication of IT1132906B publication Critical patent/IT1132906B/it

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/121The active layers comprising only Group IV materials
    • H10F71/1221The active layers comprising only Group IV materials comprising polycrystalline silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/20Electrodes
    • H10F77/206Electrodes for devices having potential barriers
    • H10F77/211Electrodes for devices having potential barriers for photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/40Optical elements or arrangements
    • H10F77/42Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/488Reflecting light-concentrating means, e.g. parabolic mirrors or concentrators using total internal reflection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Coating By Spraying Or Casting (AREA)
IT8025051A 1979-10-17 1980-10-01 Cella solare a strato semiconduttore IT1132906B (it)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2941908A DE2941908C2 (de) 1979-10-17 1979-10-17 Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
JP465680A JPS5662378A (en) 1979-10-17 1980-01-21 Semiconductor layer solar battery and method of manufacturing same

Publications (2)

Publication Number Publication Date
IT8025051A0 IT8025051A0 (it) 1980-10-01
IT1132906B true IT1132906B (it) 1986-07-09

Family

ID=25781519

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8025051A IT1132906B (it) 1979-10-17 1980-10-01 Cella solare a strato semiconduttore

Country Status (6)

Country Link
AU (1) AU6341580A (it)
FR (1) FR2468210A1 (it)
GB (1) GB2061000A (it)
IT (1) IT1132906B (it)
NL (1) NL8005707A (it)
SE (1) SE8007191L (it)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3117070A1 (de) * 1981-04-29 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum herstellen einer halbleiter-schicht-solarzelle
JPH0690013A (ja) * 1992-09-08 1994-03-29 Mitsubishi Electric Corp 薄膜太陽電池及び太陽電池の製造方法並びに半導体インゴットの製造方法及び半導体基板の製造方法
DE102009058786A1 (de) * 2009-12-18 2011-06-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 Verfahren zur Herstellung lokal strukturierter Halbleiterschichten
CN105671474B (zh) 2016-03-18 2018-11-30 李光武 制造半导体基片的方法和装置

Also Published As

Publication number Publication date
GB2061000A (en) 1981-05-07
AU6341580A (en) 1981-04-30
SE8007191L (sv) 1981-04-18
IT8025051A0 (it) 1980-10-01
NL8005707A (nl) 1981-04-22
FR2468210A1 (fr) 1981-04-30

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