FR2394173A1 - Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede - Google Patents

Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede

Info

Publication number
FR2394173A1
FR2394173A1 FR777717245A FR7717245A FR2394173A1 FR 2394173 A1 FR2394173 A1 FR 2394173A1 FR 777717245 A FR777717245 A FR 777717245A FR 7717245 A FR7717245 A FR 7717245A FR 2394173 A1 FR2394173 A1 FR 2394173A1
Authority
FR
France
Prior art keywords
amorphous silicon
thin layer
electronic devices
silicon
device obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR777717245A
Other languages
English (en)
Other versions
FR2394173B1 (fr
Inventor
Daniel Kaplan
Gonzalo Velasco
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR777717245A priority Critical patent/FR2394173A1/fr
Priority to GB24344/78A priority patent/GB1602038A/en
Priority to US05/912,533 priority patent/US4151058A/en
Priority to DE2824564A priority patent/DE2824564C2/de
Priority to CA304,800A priority patent/CA1097433A/fr
Publication of FR2394173A1 publication Critical patent/FR2394173A1/fr
Application granted granted Critical
Publication of FR2394173B1 publication Critical patent/FR2394173B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5826—Treatment with charged particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/3003—Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

L'invention a pour but de conférer au silicium amorphe des propriétés compatibles avec la possibilité de modifier par dopage ou effet de champ la position du niveau de Fermi dans le volume du silicium amorphe et notamment d'en élever la résistivité électrique. L'invention consiste à introduire pour diffusion dans le silicium amorphe la quantité d'hydrogène nécessaire pour saturer les liaisons brisées existant dans le silicium pur à l'état amorphe. A cet effet on fait subir au silicium amorphe, préalablement déposé sous vide, un traitement à chaud consistant à maintenir une couche mince de ce matériau dans l'atmosphère d'un plasma contenant de l'hydrogène ou l'un de ses isotopes. Application aux dispositifs électroniques à couche mince semi-conductrice notamment aux piles solaires.
FR777717245A 1977-06-06 1977-06-06 Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede Granted FR2394173A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR777717245A FR2394173A1 (fr) 1977-06-06 1977-06-06 Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede
GB24344/78A GB1602038A (en) 1977-06-06 1978-05-30 Method for manufacturing a layer of amorphous silicon usable in an electronic device
US05/912,533 US4151058A (en) 1977-06-06 1978-06-05 Method for manufacturing a layer of amorphous silicon usable in an electronic device
DE2824564A DE2824564C2 (de) 1977-06-06 1978-06-05 Verfahren zum Herstellen von Halbleiterelementen wie Photodioden
CA304,800A CA1097433A (fr) 1977-06-06 1978-06-05 Traduction non-disponible

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR777717245A FR2394173A1 (fr) 1977-06-06 1977-06-06 Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede

Publications (2)

Publication Number Publication Date
FR2394173A1 true FR2394173A1 (fr) 1979-01-05
FR2394173B1 FR2394173B1 (fr) 1981-04-10

Family

ID=9191720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR777717245A Granted FR2394173A1 (fr) 1977-06-06 1977-06-06 Procede de fabrication de dispositifs electroniques qui comportent une couche mince de silicium amorphe et dispositif electronique obtenu par un tel procede

Country Status (5)

Country Link
US (1) US4151058A (fr)
CA (1) CA1097433A (fr)
DE (1) DE2824564C2 (fr)
FR (1) FR2394173A1 (fr)
GB (1) GB1602038A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0010415A1 (fr) * 1978-10-16 1980-04-30 Exxon Research And Engineering Company Procédé pour la fabrication d'un film semi-conducteur
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
FR2463510A1 (fr) * 1979-08-10 1981-02-20 Siemens Ag Procede pour reduire la densite des etats de surface rapides dans le cas de composants mos
FR2473792A1 (fr) * 1980-01-11 1981-07-17 Siemens Ag Procede de fabrication de piles solaires
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
FR2536210A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
SE7803079L (sv) * 1978-03-16 1979-09-17 Lindstroem O Framstellning av slipmedelspartiklar
DE2836911C2 (de) * 1978-08-23 1986-11-06 Siemens AG, 1000 Berlin und 8000 München Passivierungsschicht für Halbleiterbauelemente
JPS5562778A (en) * 1978-11-02 1980-05-12 Fuji Photo Film Co Ltd Preparation of photoconductor film
DE2904171A1 (de) * 1979-02-05 1980-08-14 Siemens Ag Verfahren zum herstellen von aus amorphem silizium bestehenden halbleiterkoerpern durch glimmentladung
US4237150A (en) * 1979-04-18 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Method of producing hydrogenated amorphous silicon film
US4237151A (en) * 1979-06-26 1980-12-02 The United States Of America As Represented By The United States Department Of Energy Thermal decomposition of silane to form hydrogenated amorphous Si film
FR2461359A1 (fr) * 1979-07-06 1981-01-30 Commissariat Energie Atomique Procede et appareil d'hydrogenation de dispositifs a semi-conducteurs
US4229502A (en) * 1979-08-10 1980-10-21 Rca Corporation Low-resistivity polycrystalline silicon film
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
US4266986A (en) * 1979-11-29 1981-05-12 Bell Telephone Laboratories, Incorporated Passivation of defects in laser annealed semiconductors
US4285762A (en) * 1979-12-31 1981-08-25 Exxon Research & Engineering Co. Plasma etching of amorphous silicon (SE-35)
JPS56137614A (en) * 1980-03-31 1981-10-27 Futaba Corp Manufacture of amorphous silicon coat
US4322253A (en) * 1980-04-30 1982-03-30 Rca Corporation Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment
JPS56165371A (en) * 1980-05-26 1981-12-18 Shunpei Yamazaki Semiconductor device
US4315782A (en) * 1980-07-21 1982-02-16 Rca Corporation Method of making semiconductor device with passivated rectifying junctions having hydrogenated amorphous regions
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
JPS57205312A (en) * 1981-05-12 1982-12-16 Meidensha Electric Mfg Co Ltd Silicon substance containing hydrogen, its manufacture and use
US4402762A (en) * 1981-06-02 1983-09-06 John Puthenveetil K Method of making highly stable modified amorphous silicon and germanium films
US4465529A (en) * 1981-06-05 1984-08-14 Mitsubishi Denki Kabushiki Kaisha Method of producing semiconductor device
JPS57208181A (en) * 1981-06-17 1982-12-21 Hitachi Ltd Manufacture of photoelectric conversion film
JPS5826052A (ja) * 1981-08-06 1983-02-16 Asahi Glass Co Ltd アルカリ拡散防止酸化ケイ素膜付ガラス体
GB2106709B (en) * 1981-09-17 1986-11-12 Itt Ind Ltd Semiconductor processing
US4589006A (en) * 1982-08-23 1986-05-13 The United States Of America As Represented By The United States Department Of Energy Germanium detector passivated with hydrogenated amorphous germanium
US4618381A (en) * 1983-05-26 1986-10-21 Fuji Electric Corporate Research And Development Ltd. Method for adding impurities to semiconductor base material
US4569697A (en) * 1983-08-26 1986-02-11 Energy Conversion Devices, Inc. Method of forming photovoltaic quality amorphous alloys by passivating defect states
US4710648A (en) * 1984-05-09 1987-12-01 Hitachi, Ltd. Semiconductor including signal processor and transient detector for low temperature operation
EP0211634B1 (fr) * 1985-08-02 1994-03-23 Sel Semiconductor Energy Laboratory Co., Ltd. Procédé et appareil pour la fabrication de dispositifs semi-conducteurs
US5296405A (en) * 1985-08-02 1994-03-22 Semiconductor Energy Laboratory Co.., Ltd. Method for photo annealing non-single crystalline semiconductor films
US5753542A (en) * 1985-08-02 1998-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for crystallizing semiconductor material without exposing it to air
US5171710A (en) * 1985-08-02 1992-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for photo annealing non-single crystalline semiconductor films
JPH0618176B2 (ja) * 1986-03-14 1994-03-09 インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション 半導体製造装置
JPH0640550B2 (ja) * 1987-06-09 1994-05-25 沖電気工業株式会社 薄膜トランジスタの製造方法
US5213670A (en) * 1989-06-30 1993-05-25 Siemens Aktiengesellschaft Method for manufacturing a polycrystalline layer on a substrate
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) * 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH05243596A (ja) * 1992-03-02 1993-09-21 Showa Shell Sekiyu Kk 積層型太陽電池の製造方法
WO1993019022A1 (fr) * 1992-03-25 1993-09-30 Kanegafuchi Chemical Industry Co., Ltd. Couche mince de polysilicium et sa fabrication
US7097712B1 (en) 1992-12-04 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Apparatus for processing a semiconductor
CN100367461C (zh) 1993-11-05 2008-02-06 株式会社半导体能源研究所 一种制造薄膜晶体管和电子器件的方法
US6897100B2 (en) 1993-11-05 2005-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US5624873A (en) * 1993-11-12 1997-04-29 The Penn State Research Foundation Enhanced crystallization of amorphous films
DE19640832C2 (de) * 1996-10-02 2000-08-10 Fraunhofer Ges Forschung Verfahren zur Herstellung wärmereflektierender Schichtsysteme
DE102013018533B4 (de) * 2013-08-23 2019-01-10 Centrotherm Photovoltaics Ag Verfahren zum Reduzieren der Oberflächenrauigkeit einer Oberfläche aus Halbleitermaterial eines Substrats mit 3-D Strukturen

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US3463715A (en) * 1966-07-07 1969-08-26 Trw Inc Method of cathodically sputtering a layer of silicon having a reduced resistivity
US3501336A (en) * 1967-12-11 1970-03-17 Texas Instruments Inc Method for etching single crystal silicon substrates and depositing silicon thereon
GB1384692A (en) * 1971-06-05 1975-02-19 Marconi Co Ltd Methods of producing amorphous semiconductor devices
AU503228B2 (en) * 1975-07-28 1979-08-30 Rca Corp. Semiconductor device
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
CA1078078A (fr) * 1976-03-22 1980-05-20 David E. Carlson Dispositif a semiconducteur a barriere de schottky et methode de fabrication

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0010415A1 (fr) * 1978-10-16 1980-04-30 Exxon Research And Engineering Company Procédé pour la fabrication d'un film semi-conducteur
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
EP0024378A1 (fr) * 1979-08-03 1981-03-04 Thomson-Csf Procédé de réalisation d'une couche contenant du silicium à structure hybride entre les formes amorphe et polycristalline, et pile solaire comprenant une telle couche
FR2463510A1 (fr) * 1979-08-10 1981-02-20 Siemens Ag Procede pour reduire la densite des etats de surface rapides dans le cas de composants mos
FR2473792A1 (fr) * 1980-01-11 1981-07-17 Siemens Ag Procede de fabrication de piles solaires
FR2513659A1 (fr) * 1981-09-29 1983-04-01 Centre Nat Rech Scient Procede de recuit superficiel par energie micro-onde pulsee de materiaux semi-conducteurs
EP0076769A1 (fr) * 1981-09-29 1983-04-13 Centre National De La Recherche Scientifique (Cnrs) Procédé de recuit superficiel par énergie micro-onde pulsée de matériaux semi-conducteurs
FR2536210A1 (fr) * 1982-11-12 1984-05-18 Rca Corp Couches en silicium polycristallin pour dispositifs a semi-conducteurs et procede de formation d'un dispositif a semi-conducteurs

Also Published As

Publication number Publication date
US4151058A (en) 1979-04-24
DE2824564A1 (de) 1978-12-14
GB1602038A (en) 1981-11-04
FR2394173B1 (fr) 1981-04-10
CA1097433A (fr) 1981-03-10
DE2824564C2 (de) 1984-12-06

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