ATE42429T1 - Gedaempftes chemisches dampfniederschlagsverfahren glatter dotierter filme. - Google Patents

Gedaempftes chemisches dampfniederschlagsverfahren glatter dotierter filme.

Info

Publication number
ATE42429T1
ATE42429T1 AT84900354T AT84900354T ATE42429T1 AT E42429 T1 ATE42429 T1 AT E42429T1 AT 84900354 T AT84900354 T AT 84900354T AT 84900354 T AT84900354 T AT 84900354T AT E42429 T1 ATE42429 T1 AT E42429T1
Authority
AT
Austria
Prior art keywords
damped
flow rates
vapor deposition
chemical vapor
deposition process
Prior art date
Application number
AT84900354T
Other languages
English (en)
Inventor
Casimir John Wonsowicz
Original Assignee
Unisys Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Unisys Corp filed Critical Unisys Corp
Application granted granted Critical
Publication of ATE42429T1 publication Critical patent/ATE42429T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AT84900354T 1982-12-15 1983-12-14 Gedaempftes chemisches dampfniederschlagsverfahren glatter dotierter filme. ATE42429T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US06/450,115 US4460416A (en) 1982-12-15 1982-12-15 Method for fabricating in-situ doped polysilicon employing overdamped gradually increasing gas flow rates with constant flow rate ratio
PCT/US1983/001957 WO1984002426A1 (en) 1982-12-15 1983-12-14 Damped chemical vapor deposition of smooth doped films
EP84900354A EP0129588B1 (de) 1982-12-15 1983-12-14 Gedämpftes chemisches dampfniederschlagsverfahren glatter dotierter filme

Publications (1)

Publication Number Publication Date
ATE42429T1 true ATE42429T1 (de) 1989-05-15

Family

ID=23786819

Family Applications (1)

Application Number Title Priority Date Filing Date
AT84900354T ATE42429T1 (de) 1982-12-15 1983-12-14 Gedaempftes chemisches dampfniederschlagsverfahren glatter dotierter filme.

Country Status (6)

Country Link
US (1) US4460416A (de)
EP (1) EP0129588B1 (de)
JP (1) JPH0695496B2 (de)
AT (1) ATE42429T1 (de)
DE (1) DE3379697D1 (de)
WO (1) WO1984002426A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5017505A (en) * 1986-07-18 1991-05-21 Nippondenso Co., Ltd. Method of making a nonvolatile semiconductor memory apparatus with a floating gate
US5096856A (en) * 1988-03-01 1992-03-17 Texas Instruments Incorporated In-situ doped silicon using tertiary butyl phosphine
US5198387A (en) * 1989-12-01 1993-03-30 Texas Instruments Incorporated Method and apparatus for in-situ doping of deposited silicon
KR970009976B1 (ko) * 1991-08-26 1997-06-19 아메리칸 텔리폰 앤드 텔레그라프 캄파니 증착된 반도체상에 형성된 개선된 유전체
US6352910B1 (en) 1995-07-11 2002-03-05 Applied Komatsu Technology, Inc. Method of depositing amorphous silicon based films having controlled conductivity
US5966627A (en) * 1996-08-30 1999-10-12 Lucent Technologies Inc. In-situ doped silicon layers
US6479373B2 (en) 1997-02-20 2002-11-12 Infineon Technologies Ag Method of structuring layers with a polysilicon layer and an overlying metal or metal silicide layer using a three step etching process with fluorine, chlorine, bromine containing gases
DE19706783A1 (de) * 1997-02-20 1998-08-27 Siemens Ag Verfahren zur Herstellung dotierter Polysiliciumschichten und -schichtstrukturen und Verfahren zum Strukturieren von Schichten und Schichtstrukturen, welche Polysiliciumschichten umfassen
TW525228B (en) * 1999-02-12 2003-03-21 Applied Komatsu Technology Inc Method of depositing amorphous silicon based films having controlled conductivity
US6410434B1 (en) * 2000-03-09 2002-06-25 Advanced Micro Devices, Inc. Method and apparatus for formation of in-situ doped amorphous semiconductor film
US6448180B2 (en) * 2000-03-09 2002-09-10 Advanced Micro Devices, Inc. Deposition of in-situ doped semiconductor film and undoped semiconductor film in the same reaction chamber
WO2010099217A1 (en) 2009-02-25 2010-09-02 Braincells, Inc. Modulation of neurogenesis using d-cycloserine combinations

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3321278A (en) * 1961-12-11 1967-05-23 Bell Telephone Labor Inc Process for controlling gas phase composition
US4087571A (en) * 1971-05-28 1978-05-02 Fairchild Camera And Instrument Corporation Controlled temperature polycrystalline silicon nucleation
US3945864A (en) * 1974-05-28 1976-03-23 Rca Corporation Method of growing thick expitaxial layers of silicon
US3930908A (en) * 1974-09-30 1976-01-06 Rca Corporation Accurate control during vapor phase epitaxy
JPS5183473A (en) * 1975-01-20 1976-07-22 Hitachi Ltd Fujunbutsuno doopinguhoho
US4217375A (en) * 1977-08-30 1980-08-12 Bell Telephone Laboratories, Incorporated Deposition of doped silicon oxide films
US4313253A (en) * 1979-07-30 1982-02-02 Burroughs Corporation Method of fabricating a charge transfer channel covered by a stepped insulating layer
US4354307A (en) * 1979-12-03 1982-10-19 Burroughs Corporation Method for mass producing miniature field effect transistors in high density LSI/VLSI chips
US4341818A (en) * 1980-06-16 1982-07-27 Bell Telephone Laboratories, Incorporated Method for producing silicon dioxide/polycrystalline silicon interfaces

Also Published As

Publication number Publication date
DE3379697D1 (en) 1989-05-24
EP0129588A4 (de) 1985-12-12
JPS60500156A (ja) 1985-01-31
WO1984002426A1 (en) 1984-06-21
US4460416A (en) 1984-07-17
EP0129588B1 (de) 1989-04-19
JPH0695496B2 (ja) 1994-11-24
EP0129588A1 (de) 1985-01-02

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Legal Events

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