TW525228B - Method of depositing amorphous silicon based films having controlled conductivity - Google Patents

Abstract

Deposition methods for preparing amorphous silicon based films with controlled resistivity and low stress are described. Such films can be used as the interlayer in FED manufacturing. They can also be used in other electronic devices which require films with controlled resistivity in the range between those of an insulator and of a conductor. The deposition methods described in the present invention employ the method of chemical vapor deposition or plasma-enhanced chemical vapor deposition; other film deposition techniques, such as physical vapor deposition, also may be used. In one embodiment, an amorphous silicon-based film is formed by introducing into a deposition chamber a silicon-based volatile, a conductivity-increasing volatile including one or more components for increasing the conductivity of the amorphous silicon-based film, and a conductivity-decreasing volatile including one or more components for decreasing the conductivity of the amorphous silicon-based film.

Description

525228, description of the invention () Deng Jli member: The present invention is generally related to a method for depositing an amorphous ... film on I *, two, / 'The edge film has a controlled electrical conductivity, more specifically, the relationship of the present invention In a kind of method used by our firm, "Ji Fei Ri Ri Zhen" as the main film, the film has conductivity between the exchange of heterogeneous amorphous silicon. The film can be deposited on a substrate by a chemical vapor deposition process.蹵 Background: In recent years, flat panel display devices have been developed for various electronic applications. In this device, an active matrix liquid crystal display II and a 'II series are used. However, liquid crystal display devices have fixed limitations, and they are not suitable for many applications. For example, liquid crystal display devices have manufacturing limitations such as low deposition speed of amorphous silicon on broken glass, high manufacturing complexity, and low yield. Even though most of the light is wasted, the displays need—low-power light-emitting backlights. A liquid crystal display image is difficult to see at the same time from bright light or extreme viewing angle. This viewing angle is the main consideration in many applications. A newly developed device, the field emission display (FED) overcomes some of the limitations and provides significant advantages for liquid crystal display devices. For example, 菖 FED has a higher 鬲 contrast ratio, larger viewing angle, higher maximum brightness, lower power consumption, and wider operating temperature range when compared with typical thin film transistor liquid crystal display devices. Unlike a liquid crystal display, a field emission display (FED) uses colored light p to produce its own light. The FED does not need to be complicated. The power-consuming backlight and filter, and all the light generated by the FED are available to the user. Page 2 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the phonetic on the back? Matters before filling out this page} n H ϋ H, _ HI 1 nnnn I »Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 525228 A7

See you. It does not require large arrays of thin film transistors. Therefore, the main source of yield problems for active matrix liquid crystal displays is eliminated. In the FED, electrons are emitted from a cathode and collide with a phosphor 'on the back surface of the transparent plate to produce an image. This cathodic emission process is known to be the most effective method of generating light. Unlike traditional CRTs, each pixel in a FED has its own electron source, typically an array of emitting microdots. The voltage difference between the cathode and the gate draws electrons from the cathode and accelerates them toward the phosphor. Because of Λ, the emission current and display brightness depend entirely on the work function of the emitting material. The cleanliness and uniformity of the emission source materials are the basic requirements. Most FED systems are pumped down to a low pressure, ie 10.7 Torr, to provide a long free path of Ping Shao to emit electrons and prevent it; defects and tip deterioration. The apparent π resolution improvement is achieved by using a focusing grid to collimate the electrons absorbed by the micro-dots. The first field emission cathode developed for a π display device uses molybdenum metal micro-dots to emit plutonium. In this device, a silicon wafer system is first oxidized to produce a thick SiO 2 layer, and then a metal gate layer system is deposited on the oxide K. The gate layer system is then patterned to form a gate hole. The Si02 under the etched hole caused the gate undercut and created a well. The molybdenum series is deposited at the normal incidence 'while a sacrificial material such as Ni series is deposited from a source placed on the device side, so that a cone with a sharp point grows in the cavity. When the sacrificial layer is removed, the emitter cone is left. In another fed device, the silicon micro-dot emitter is made of thermally oxidized silicon substrate, patterning the silicon oxide, exposing the underlying silicon substrate, and choosing to etch. Page 3 This paper applies Chinese National Standards (CNS) A4 specifications (210 X 297 public love) (Please read the precautions on the back before filling out this page) C · -------- Order · -------- · Employee Consumption of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 525228 ^ _____ Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed A7 B7 Description of the invention () Cut out the road to produce sharp points. Further oxidize and protect the name and make the point sharp. In another & meter, micro-dots are added to a desired material, such as glass substrates. 'The Poma is an ideal substrate for large area flat panel displays. The microdots can be made of a conductive material, such as a metal or a doped semiconductor. In this FED device, we want to have an interlayer 'that has a controlled conductivity between the cathode and the microdots. Proper processing of the interlayer resistivity allows the device to operate in a stable and controlled manner. The resistivity of the interlayer is between the insulator and the conductor, and the actual desired value depends on the specifications of the device design. Chemical vapor deposition (CVD) or plasma enhanced chemical vapor deposition (PECVD) is widely used in the manufacture of semiconductor devices to deposit material layers onto various substrates. In a conventional PECVD process, a substrate is placed in a true 2 deposition chamber, which is equipped with a pair of parallel plate electrodes. The substrate is generally mounted on a crystal base, which is also a lower electrode. A reaction gas flows into the deposition chamber through a gas inlet manifold, which also serves as the upper electrode. A radio frequency (RF) voltage is applied between the two electrodes, and an RF power is generated enough to form an electrode in the reaction gas. The plasma decomposes the reactive gas and deposits a desired material on the surface of the substrate body. Other electronic material layers can be deposited on the first layer by flowing into the deposition chamber with a reactive gas that contains another layer of material to be deposited. Each reaction gas system is treated with plasma, and a desired material layer is deposited. In the manufacture of field emission display devices, I would like to deposit an amorphous crystal. Page 4 The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling in this Page) _installation ---- order ---------, 525228 Printed A7 by the Consumers 'Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Main film' This film has its essence _ and n + Doped amorphous fragmentation ... range. The conductivity of η and heteroamorphous crystals is controlled by adjusting the number of phosphorus atoms in the film containing ".", said, buried in the original, even if it may be added by very little! and phosphorus atoms to generate intermediate conductance-^, Conductivity film, but it is very difficult to work, that is, it requires special premixing pH &quot; &gt;. 2 in order to precisely control the number of phosphorus atoms because the field emission display device makes it very original, very; layer, it must deposit a low stress film to prevent Glass bending and thin film peeling standard process spr Μ ° used to deposit amorphous broken film τ succinated film produced by the South compression, especially when. Tian Yitong, the deposition rate of the hairpin I shear and general sincerity:: Invention Provide a deposition method to prepare amorphous films with controlled resistivity. These films can be used as interlayers in FED manufacturing. They can also be used in other electronic devices. Controlling the resistance and rate in the range of insulators and conductors is known as <浔 腠. The deposition method described in the present invention uses chemical vapor deposition. But other thin film deposition techniques Qikou physical vapor deposition is also in the-aspect, the present invention is characterized by a method of forming an amorphous film on a substrate 'the substrate is located in a deposition chamber, the method includes: Zhenweiwang introduced volatiles into the deposition chamber; introduced-conductivity increased volatiles into the deposition chamber 'the conductivity increased volatiles contained-or most of the components used to increase the conductivity of the amorphous film as the main film; and-conductive The reduction of volatile matter cited on page 5 The private paper size applies to the Chinese National Standard (CNS) A4 (210 X 297 mm) IJ ^ ---------. (Please read the precautions on the back before filling in this Page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228 A7 ---------_ B7_ _____ __ V. Description of the invention () ^ '~-In the owner's "Iconductivity reduction of volatile matter contains a must The conductivity of the main film is based on the amorphous salt of the salt V. On the other hand, the invention is characterized by a method for forming an amorphous silicon film on a substrate, which is located in a deposition chamber. This method · 恍 — .. ^ ^, the main volatiles are introduced into the deposition chamber overnight The phosphine is introduced into the deposition chamber; and the nitrogen-containing volatiles are introduced into the deposition chamber. In another aspect, the present invention is characterized by a method for forming an amorphous silicon-based film on a substrate. The material is located in the deposition chamber, and the method includes: introducing a silicon-based volatile substance into the deposition chamber; introducing phosphine into the deposition chamber; and introducing a carbon-containing volatile substance into the deposition chamber. Embodiments may include one or more of the following. Characteristics. Increased conductivity and decreased conductivity can be introduced into the deposition chamber at a relative relative flow rate, which is selected to achieve the desired film resistivity. The relative flow rate can be selected to achieve approximately 1.03 to Film resistivity of 107 ohm cm. The volatiles with increased conductivity may contain phosphine and the volatiles with reduced conductivity may contain ammonia. Phosphine and ammonia are introduced into the deposition chamber at a flow rate ratio in the range of about 1: 1 to about 1:10 (phosphine: ammonia). Alternatively, the conductivity-increasing volatiles may include phosphine and the conductivity-decreasing volatiles may include methane, and the phosphine and methane are at a flow rate of about 1: 1 to about 1: 1 (phosphine · methane). The conductivity increasing volatiles may include a dopant. The dopant may include an n-type dopant (such as phosphorus) or a p-type dopant (such as boron). Amorphous silicon-based film can be characterized by a band gap, and the conductivity is reduced. Volatile compounds preferably include a band gap increasing component, which increases # 晶 碎 Main film phase. Page 6 This paper applies Chinese national standards ( CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling this page)

Explanation (j ^^ &gt; 228 5. The inventor is formed in a similar stopper * Addition of the band gap of another film under the fv channel without the band double (for example: 曱! 二 率 増 加The probe can be ... gas, ammonia, and in the same embodiment, Shi Xi is lucky, and the package &amp; _ ',, dagger containing ^ Xi Jian' conductivity increases volatile, the two kings and two electricity eight rate Reduce volatiles to include ammonia. In another embodiment and conductivity, silanes are widely contained and volatiles are increased to include phosphine, and volatiles are reduced to reduce the volatiles, such as Dongjiao 6, and the film to contain silicon loam. In another embodiment, Silicon-based volatiles package:! Increase volatiles containing phosphine 1-Conductivity reduction "Two conductivity reduces volatiles containing methane. Two; 1 :! Reduce volatiles can be introduced into the deposition chamber. Amorphous sands dominate / The special model in J, with precise control of electrical conductivity and low stress, is produced by an inverse library and wide-touch enhanced chemical vapor deposition chamber to produce a milk compound and flow into an electropolymer gas. Hydrogen content, North: Qian: Ammonia and phosphine. Phosphonium is changed by controlling the pressure of the phosphine part and Wang Ting The n-type conductivity can be changed, that is, to increase the amount :::: plus conductivity. By controlling the pressure of the ammonia part, the nitrogen content can be changed. 4 can be changed, that is, increasing the nitrogen content to increase the non-main film ^ ^ material field emission The ideal range of the display device is about ... / 10 cmcm. The novel method described in the present invention allows both of this technology to control the resistivity of the amorphous second main film within the desired range of 103 to 107 ohm cm. The film produced by the novel method has low tensile stress, so that bending or peeling from the substrate can be avoided. The invention also relates to a field emission display device, which is manufactured by plasma enhanced chemical vapor deposition technology. The size of the paper for the reaction gas mixed paper in the technology is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) (Please read the precautions on the back before filling this page) Mounting • n I nn · ϋ nn Order- ------- · 525228. A7 B7 V. Description of the invention () Compounds, including silane, hydrogen, phosphine (carried in hydrogen) and ammonia are used to produce amorphous silicon with cross-conductivity. Main film. By adjusting each The flow rate of the partial gas can be obtained as a main thin film of amorphous stone with precise control conductivity and low stress for field emission devices. The advantages of the present invention are as follows: The present invention provides a method 'for chemical gas In the phase deposition process or the plasma enhanced chemical vapor deposition process, an amorphous film with controlled conductivity and low stress is deposited, and a simple process control step is incorporated. The invention also provides a method for chemical In the vapor deposition process or the plasma two strong chemical vapor deposition process, by using a reaction gas mixture containing PA and NA, the amorphous thin film is mainly deposited. The thin medium has a low electrical conductivity and low stress. The present invention further provides a method for depositing a non- "main film having a controlled conductivity or a plasma enhanced chemical vapor deposition process by controlling the flow rate of the reaction gas in the reaction chamber. Other features and advantages of the present invention will be understood from the following description including drawings and patent application scope. 3 Illustration of brief military illustration: Plasma printing enhanced by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Figure 1 shows the method according to the present invention. Sectional view of facies deposition chamber. U. Figure 2 is an enlarged sectional view of a typical field emission display device. Figure 3 is a graph illustrating the relationship between resistivity and pHs and NA flow ratio.

Figure 4 is a chart illustrating the relationship between stress and pH j 久 inh3. Page 8 This paper applies the Chinese National Standard (CNS) A4 specification (21〇X 297 public love) 525228 A7 V. Description of the invention (Department. Figure 5 is the relationship between the entrapment ratio of the Leiyang disk and the phosphine: methane flow rate ratio of the amorphous silicon-based film. Gang No. control gas Ming: 10 plasma enhanced chemical vapor deposition equipment 12 16 20 24 28 32 38 50 54 58 Deposition chamber gas inlet manifold shaft lifting plate lifting hole side wall substrate field emission display device glass substrate metal gate layer 14 18 22 26 30 36 42 52 56 60 RF power supply gas inlet tube resistance layer insulator layer cathode structure (please read the precautions on the back before filling this page) -Installation -------- Order --------- · Detailed description of the invention 3 : Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention discloses an improved ancient method for depositing amorphous stones with controlled conductivity and low stress. The thin film is mainly used as a substrate Electronic devices such as field emission display devices Vapor deposition technology. Reference is made to Fig. 1 which shows a sectional view of a plasma-enhanced chemical vapor deposition device 10 'in which the method according to the present invention can be performed. For example, disclosed by Turner et al. U.S. Patent No. 5,512,32. Yi Shen, page 9 This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 525228

V. Description of the invention () The opening 'passes through the top wall 14 and the -electrode or gas inlet port & 16 in the side opening. Alternatively, the D member M 14 can be cured with the tuner pole 16 adjacent to the inner surface (please read the precautions on the back before filling this page). There is a crystal | 1 8 in the chamber i 2. The seat is in the form of a plate. The base 18 is typically aluminum and is coated with a layer of alumina. A crystal line 1 δ #, 丄, said Japanese 18 series is connected to the ground, so that it is used as the first pole ′ to connect the RF source 36 between the two electrodes 16 and 18. The cymbal 18 is mounted on one end of the shaft 20, and the axial direction extends vertically through 12 to the bottom wall 22. The axis 20 can be moved vertically to allow the pedestal 18 to be perpendicular to the first electrode or away from the electrode. A lifting plate 24 extends horizontally between the base 18 and the bottom wall 22 of the deposition chamber 12, and the bottom wall is substantially flat and can move vertically on the base 18. The lifting pin 26 can be extended vertically by the lifting plate 24. The lift pins 26 are positioned to extend through the base 18 &lt; lift holes 28 &apos; and their length is slightly longer than the thickness of the base 18. Although only two lifting pins 26 are shown in the figure, there may be more lifting pins 26 separating the lifting plate 24. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics A gas outlet 30 extends through the side wall 32 of the deposition chamber 12 and is connected to a mechanism (not shown) for exhausting the deposition chamber 12. A gas inlet pipe 42 extends into the gas inlet manifold 16 of the first electrode or deposition chamber 1] and is connected through a gas exchange network (not shown) to various gas sources (not shown). The first electrode 16 is connected to an RF power source 36. A transfer plate (not shown) is typically provided to carry a substrate through a vacuum insulation door (not shown) into the deposition chamber 12 and onto the wafer base 18, and at the same time is removed from the deposition chamber 12 and coated. Of the substrate. In the operation of the deposition equipment 10, a substrate 3 8 series is first loaded on page 10. The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 525228 A7 B7 V. Description of the invention (economic The Intellectual Property Bureau employee consumer cooperative printed the deposition chamber 12 and was accidentally placed on the crystallizer 18 by the transfer board (not shown). The substrate 38 is-size 'This size exceeds the lifting hole 28 of the crystal base 18 A commonly used size for a flat panel display device substrate is approximately 36 × multiplied by 465 colors. A crystal is positioned by moving &amp; 20 to position on the lifting pin 26 'so that the lifting pin 26 and The husband M a F Λ top extends through the hole 28, and the crystal bases 18 and 38 are quite close to the first rain 4τ_ ^ brother 16. The electrode between the surface of the substrate and the release surface of the gas inlet manifold 16 The pitch or distance is between about 12 and about 50 °.-A better electrode pitch is between about 20 and about 36 mm. Before the deposition process of the present invention, it can be a large substrate 38 | According to known Technology to manage. After the initial processing of the preferred embodiment, The upper layer is deposited. At the beginning of the deposition process of the present invention, the deposition chamber 12 is first evacuated through the gas outlet 30. The patterned substrate is then positioned on the wafer base 18. The substrate 38 is held Between about 200i and 40th generation, when the amorphous silicon of the present invention is deposited thin. At the time of deposition, the preferred temperature range for the substrate is between about 300t to about 35 ° C. During deposition, the pressure between about 0.5 Torr and about 5 Torr is maintained in the reaction chamber, and a preferred pressure range is between about 5 Torr and about 2.5 Torr. The detailed processing of the equipment is included in the US Patent No. 5,399,387 of Lao et al., Which was assigned to the assignee of this case, and the case is incorporated as a reference. An enlarged cross-sectional view of a typical field emission display device 50. The device 50 is a glass substrate by depositing a resistive layer 52 of amorphous silicon as the main film (please read the precautions on the back before filling this page) ^ ---- ---- ^ --------- Page 11 W Zhang ruler—Zhong ⑵ 0 χ 297 public hair r 525228 A7 B7 V. Description of the invention ((Please read the note on the back first) And then fill in this page) 54. An insulator layer 56 and a metal closing layer 58 are then sequentially formed and etched to form metal microdots 60. A cathode structure 60 is covered by the resistive layer 52. Therefore A resistive but slightly conductive amorphous silicon layer 52 is on a highly insulating layer 56 such as Si02. It is important to be able to control the resistivity of the amorphous silicon layer 52 so that it does not form too much resistance, but it will act as a Limit the resistance to prevent excessive current from flowing when a micro-dot 60 is shorted to the metal layer 58. It should be noted that although a field emission display device is displayed to demonstrate the method of the present invention, the method is not limited to the manufacture of FEDs. Microfax can be used in the manufacture of any electronic device that requires the deposition of a layer of controlled resistivity. A series of tests were performed on test specimens prepared by the method of the present invention to print 'to show the reaction flow rate effect on the conductivity and the stress of the resulting film. The results are summarized in Tables 1 and 2. Example Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy Example 1F 7F is used for the deposition of an essentially amorphous silicon thin film. The film does not contain a doping gas in the reaction gas mixture. The film is formed as a by-product of the mash and hydrogen reaction in the slurry on the heated substrate. The flow rate of crushing and burning is controlled at 1000 sccm 'and the flow rate of hydrogen is controlled at 1000 sccm, and the plasma power used (that is, the RF power supplied to the electrode 16) is 300 watts, and the pressure of krypton is maintained at 200 TOR The distance between the electrode and the electrode (that is, the distance between the electrode 16 and the crystal base 18) is maintained at 962 mils (2.44 cm). The crystal base which is heated by contact heating is maintained at a temperature of 4 丨 〇 Page 12 525228 Α7 Β7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the invention description (degrees, and the deposition rate obtained are 16.8 nanometers per minute. After the deposition process is completed, the obtained thin films are tested In order to produce the following physical characteristics, 8. Q X108 dyne compressive stress per square centimeter and resistivity of 2.0 xio9 ohm centimeters. Example 2 Example 2 illustrates a deposition process for doped p amorphous silicon, where a thin film is deposited on The flow of PZ3 gas, but there is no NZ3 gas. The flow rate of silane is 1000sccm, and the flow rate of PZ3 is 0.5Sccm, and oxygen is 1000sccm. 9 6 2 mils (2 · 44 cm), the crystal base temperature is 41 ° C and the deposition rate is completed at 156 nanometers per minute. Phosphine is a concentration of 5% in a hydrogen carrier gas, which is in the flow rate. The obtained amorphous silicon film has a compressive stress of 7 x109 dyne per square centimeter and a resistivity of 17 x 10 2 ohm centimeters. Example 3 In this example, 'only ammonia gas is used in the reaction gas mixture' without PH3 gas. The flow rate of the silane gas used is 1000 sccm 'The flow rate of NH3 is 50 SCCm, the flow rate of hydrogen is 1000 sccm, the RF power used is 300 watts, the chamber pressure system is maintained at 200 Torr, and the electrode spacing system is 962 mils (2.44 cm) with a crystal temperature of 41 ° (Γ (:, and a deposition rate of 135 nm per minute). The physical properties obtained for the film are far different from those obtained in Example 2. The film stress is at 7 4 χ 丨 〇9 per square page. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm). C Please read the note on the back first? Matters before filling out this page) &gt; ---------- Order -------- Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 525228 A7 __________B7 V. Description of the invention () Tension mode of cm dyne. The measured film resistivity has a high resistance value of 2 2 χ 丨 〇i 0 ohm cm. In this example, the doping gas of PH; And the nitrogen-containing system of Nh3 is used in the reaction gas mixture, and the flow rate ratio of PH3 to NH3 is 1.25 × 10-2 to 1. The flow rate of crushed mash is iooosccm, the flow rate of PH3 is 25 sccin, the flow rate of NH3 is 20 sccm, and the flow rate of H2 is 1 000 sccm. The RF power used was 600 watts, the chamber pressure was 2.0 Torr, the electrode spacing was 962 mils (2.44 cm), and the wafer temperature was 400 ° C, and a deposition rate of 1 97 nm per minute was obtained. An amorphous silicon film having a desired resistivity was obtained. The physical properties of the thin film were measured at a tensile stress of 4.0 × 10 dyne per square centimeter and a resistivity of 1.6 × 10 ohm centimeter. It should be noted that the resistivity value is about one and a half of the two limit values shown in Example 2 and Example 3, that is, between .7 X 102 and 2.2 X 1010. Example 5 In this example, both PH3 and NH3 gases were used in the reaction gas mixture. The flow rate ratio of PH3 to NH3 is 0.75 X 1 (T2 to 1. In this chemical vapor deposition process, the flow rate of silane is 1000 Seem, the flow rate of NH3 is 200 sccm, and the flow rate of PH3 is 1.5 sccm. The flow rate of H2 is 1000seem, the RF power used is 600 watts, the room pressure is maintained at 2.0 Torr, the distance between the electrodes is 962 mils (2.44 cm), and the temperature of the crystal holder is maintained at 4 0 0 ° C, and obtain the deposition rate of 197 nanometers per minute (please read the precautions on the back before filling in this page) &gt; loading ------- --order --------- · P. U

525228 V. Description of the invention (A7 rate. The physical characteristics of the film obtained are based on the I · 3 stress per square centimeter I tensile stress and the resistivity of 9 · 6 × 105 ohm centimeter. It can be seen By increasing the flow rate of PH; relative to ΝΗ3, when compared to Example 4, the resistivity of the membrane increases and the tensile stress increases only slightly. Example 6 In this example, the ΝΗ; and PH; gas systems are used In the reaction gas mixture, the flow rate ratio of PZ3 to NZ; is 15 ° &lt; 10.2 ratio! In this chemical vapor deposition process, the flow rate of silane is 1000 scccni, the speed of PA It is 1.5sccm, the flow rate of NH3 is 100sccm, the flow rate of H2 is 1000sccm, the RF power used is 600 watts, and the chamber pressure is maintained at 2.0 Torr. The distance between the electrodes is 962 mils (2.44 cm). The crystal base temperature is maintained at 400 ° C and a deposition rate of 240 nanometers per minute is obtained. The obtained film characteristics have a waste force of 4.7X109 dyne per square centimeter and a resistivity of 3.6X105 ohm centimeters. Yes It can be seen that when the ammonia content in the anti-mad gas mixture is reduced, compared to the PH3 content, the membrane The resistivity decreases and the tensile stress increases only slightly. Example 7 In this example, both PH3 and NH3 gases are used in the reaction gas mixture. The flow rate ratio of PH3 to NH3 is 0.6 × 10 · 2 to 1. However, it can be believed that the flow rate ratio of PH3: NH3 can be as low as 0.1 × 10.2 or 0.001: i. In this chemical vapor deposition process, the flow rate of silane is 1000 sccm, and the flow rate of NH3 is 2. 〇sccm'PH3 has a flow rate of i 5sccm. The paper size on page 15 applies Chinese National Standard (CNS) A4 ϋ ^ 1 () χ 297 mm) (Please read the precautions on the back before filling this page)

Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7

525228 V. Description of the invention () 2 The flow rate is 1000 sccjn, the Rp M power used is reduced to 400 watts. The chamber pressure system is maintained at 2.0 Torr, and the distance between the electric cores is 962 mils ( 2.44 cm) The temperature of the crystal base was maintained at 400. (:, And obtain a deposition rate of 180 nanometers per minute. The physical properties of the obtained film are at a tensile stress of 6.3 x 109 dyne per square centimeter and a resistivity of 7.0 ohm x 6 cm. It can be seen that by increasing the flow rate of M%, the resistivity of the film increases substantially and the tensile stress remains almost unchanged when compared to Example 6. Example 8 In this example, both PH; and NH 3 gas are used for The flow rate ratio of P Η3 to Ν Η3 in the reaction gas mixture is 2.5 5 X 1 〇-2 to 1. It is believed that the flow rate of P Η3 · ΝΗ3 can be used when the flow rate is south to ιχιι or 〇: ι: 1. In the chemical vapor deposition process, the flow rate of silane is 1000 sccm, the flow rate of NH3 is 100 sccm, the flow rate of pH 3 is 25 sccm, the flow rate of H2 is 1000 sccm, the rf power used is 400 watts, and the chamber pressure is Maintained at 2.0 Torr, the distance between the electrodes was 962 mils (2.44 cm), the temperature of the crystal holder was maintained at 400 ° C, and a deposition rate of 190 nm per minute was obtained. The physical characteristics of the obtained film were Tensile stress per square centimeter at 4.8 X 1.09 ohms per square centimeter It can be seen that by increasing the flow rate of PZ3, when compared to Example 7, the resistivity of the film increases greatly, and the tensile stress remains substantially unchanged. Example 9 In Example 9, the doping gas of ρη3 and Gas nitrogen N2 series is used to reverse page 16 of this paper size _ + _ Jia Xian (CNS) A4 size (210 X 297 cm) (Please read the precautions on the back before filling this page) _Package ---- --- —Order --------- · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228 A7 B7 V. Description of the invention () Should be in a gas mixture. Broken :): The flow rate of the end is 1 〇 〇〇sccm, the flow rate of P2.53 is 2.5sccm, the flow rate of N2 is I 500sccm, the flow rate of H2 is 1000sccm, the RF power used is 600 watts, the room pressure system is maintained at 1.2 Torr, and the distance between the electrodes is At 962 mils (2.44 cm), the base temperature was maintained at 400 ° C and a deposition rate of 1 90 nm per minute was achieved. An amorphous silicon film having a desired resistivity is obtained. The physical characteristics of the film are: quilt at 2.5xi09 dyne tensile stress per square centimeter and resistivity of 9.6xΐ05 ohm centimeter. It is conceivable that increasing the tear level of nitrogen increases the resistivity but decreases the conductivity. Example 10 In Example 10, a doping gas of PH3 and a gas nitrogen N2 were used in a reaction gas mixture. The flow rate of silane is 1000 sccm, the flow rate of PH3 is 2.5 sccm, the flow rate of N2 is 500 sccm, the flow rate of H2 is 1 500 sccm, the RF power used is 600 watts, and the chamber pressure is maintained at 1.2 Torr at the electrode. The interval is 962 mils (2.44 cm), the crystal base temperature is maintained at 400 ° C, and a deposition rate of 194 nm per minute is obtained. An amorphous silicon film having a desired resistivity was obtained. The physical properties of the film were measured at 1.1 X 1.09 dyne per square centimeter compressive stress and 8 · 2 X 1 02 ohm centimeter resistivity. This information is consistent with the results obtained from other examples. The examples 1 to 3 shown are comparative examples prepared by the prior art. Examples 4 to 0 described above illustrate the advantages that the present invention may accomplish. The data for Examples 1 to 10 are shown in Tables 1 and 2. Page 17 1 This paper size applies to China's national standard * CNS A4 (21Q X 297 public love) &quot; (Please read the precautions on the back before filling this page) | ϋ H ϋ ϋ — ϋ n ^ -Γοτ _ ΜΜ MM ·· a ··· SB ·· I Snow * Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228 A7 B7 V. Description of the invention () Table 1 Example 1 Example 2 Example 3 Example 4 Example 5 S1H4 ( seem) 1000 1000 1000 1000 1000 PH3 (seem)-5.5-2.5 1.5 NH3 (seem)-one-500 200 200 PH3 / PH (χΙΟ2)---1.25 0.75 Η2 (seem) 1000 1000 1000 1000 1000 Power (W) 300 300 300 600 600 Pressure (Torr) 2.0 2.0 2.0 2.0 2.0 Pitch (mils) 962 962 962 962 962 Temperature (° C) 410 410 410 400 400 Deposition rate (nm / min) 168 156 135 197 197 Stress (Dyne / cm2) C8.0E8 C1.7E9 T7.4E9 T4.0E8 T1.3E9 Resistivity (ohm-cm) 2.0E9 1.7E2 2.2E10 1.6E5 9.6E5 Intellectual Property Bureau employee, Ministry of Economic Affairs Printed by Consumer Cooperatives, page 18 (Please read the notes on the back before filling this page)

This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 525228 A7 B7 V. Description of the invention (Table 2) Example 6 Example 7 Example 8 Example 9 Example 10 SiHU (seem) 1000 1000 1000 1000 1000 PH3 (seem) 1.5 1.5 2.5 2.5 1.5 NH3 (seem) 100 250 100 -----PH3 / PH (χΙΟ2) 1.50 0.60 2.50--N2 (seem)---1500 500 H2 (seem) 1000 1000 1000 1000 1000 Power (W) 600 400 400 600 600 Pressure (Torr) 2.0 2.0 2.0 1.2 1.2 Pitch (mil) 962 962 962 962 962 Temperature (° C) 400 400 400 400 400 Deposition rate 240 180 190 190 194 ( Nanometer / minute) Stress T4.7E9 T6.3E9 T4.8E9 T2.5E9 C1.1E9 (Dyne / cm2) Resistivity 3.6E5 7.0E6 6.0E4 9.0E5 8.2E2 (ohm-cm) (Please read the back first Please pay attention to this page, please fill out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs by mixing PH3 and NH3 doped gases together in various volume ratios, ie for the range of NH3: PH3 from 1 000: 1 to about 10: 1 In an amorphous silicon film with a desired stress and resistance value, Too. It is shown in Figure 3. By changing the content of phosphine in the reaction gas mixture, the conductivity of the film can be changed. For example, increasing the phosphine content increases the film guide. Page 19 The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 525228 ^ ____ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives A7 B7 Invention Description ( ) Electricity 'because phosphine is an electron donor. Similarly, changing the nitrogen content in the reaction gas mixture changes the resistivity obtained because nitrogen causes the edge characteristics of the film. For example, the resistivity of an amorphous silicon film obtained by increasing the nitrogen content f 'in the reaction gas mixture is increased. The desired range of resistivity of the amorphous silicon in the present invention is between 1Q3 and about 1G7 ohm centimeters. This range is available from the data in Table i. The best range of% resistivity for other experimental data ranges from about 105 to about 1.06 ohm centimeters (between 1 and 2, by using the present invention "NH3 and For PH3 reaction gas mixture, a film with controlled conductivity and low stress is formed as the main film system. The stress levels in this film are preferably minimized. The stress value should be kept as low as 10 dyne / The square centimeter and the high 108 dyne / cm2 range are shown in Figure 4. The degree of stress remains essentially the same, but the pH]: ΝΑ &lt; Flow rate changes. The novel method described here completes the non- Appropriate control of the type of stress of the crystalline silicon film, and at the same time, allows predictable selection of the obtained resistivity. Examples 1 to 8 use ammonia as a nitrogen-containing gas. Examples 9 and 丨 use nitrogen N2 as a nitrogen-containing gas and produce a range of 102 to The controllable resistivity of 104 ohms. It can be known that nitrogen-containing gas such as Nα will produce similar results. I believe that nitrogen is introduced into the amorphous silicon substrate beyond the relevant doping level. Although the semiconductor n-type doping is increased The concentration of substance p comes from increasing Electrical conductivity (decreasing resistivity), but increasing the concentration of nitrogen tends to increase the electron's band gap when the resulting material gradually changes from amorphous silicon to silicon nitride. A larger energy band gap is related to an increase in resistivity. Therefore The similar effect should be adjusted by the paper on page 20 _Standard (CNS) A4 size coffee 297 public love) ------------ install -------- order-- ------- line (please read the notes on the back before filling this page) 525228 A7 V. Description of the invention (obtained by using carbon or oxygen-containing gas, ^ children and other gases make the material into this insulation: Π and Dioxin… The energy band gap of the mesh is related to the increase in% and the 似 0 member effect should be obtained by using carbon or oxygen containing _, which makes the material semi-insulating and =

Electricity silicon dioxide approaches. / And J For example, a carbon-containing volatile matter (for example, lice or grudge) can be controlled when an amorphous stone is deposited as the main film, and the conductivity of the deposited film can be controlled. In an embodiment, methane ((: 114 :) series &amp; one% ^ silicon-containing volatiles (such as burning gas) and doped volatiles (example # ph3 gas or B2H6 gas) are added to the deposition chamber to form a non- Crystal silicon is the main film. &Gt; As shown in Figure 5, when the gadolinium phosphine gas is used as a doping volatile, the resistivity of the epicardial membrane varies with : Called the flow rate ratio to decrease) and increase. Assume that other factors remain unchanged ... Volatile substances are added to the deposition chamber and tend to increase the resistivity of the deposited film. In one embodiment, a nitrogen-containing volatile substance (eg, egg 3, Ratio or ratio 0) can be introduced into the deposition chamber together with carbon-containing volatiles (for example, CHO and a doped volatile (for example, pH 3 or B2H6). In this embodiment, Increasing the resistivity of the deposited film, and doping it to increase the conductivity of the deposited film. In these embodiments, the amorphous silicon-based film can be formed by many film formation techniques, including chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (pECVD) and sedimentation (PVD) technology. When the film is formed using PVD, carbon-containing volatiles can be introduced into the deposition chamber by RF sputtering with a high-purity silicon carbide target. 0 Page 21 (Please read the precautions on the back before filling in this (Page)-Pack

T ί I ϋ yn 1 · ϋ emmm ί ί β I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228. V. Description of the Invention (Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs The above examples show one and the right. Fe is an amorphous shard with a resistivity of 10 to ohm ohm cm. Five people believe that the controllable range can be extended to i〇iQ by using a very limited amount of phosphate. Ohm centimeter, especially the heavy ammonia concentration of Example 3. Because the present invention provides a controllable completion range of 10 to 10 09 Ohm centimeters, the resistivity method is not easy to achieve in the prior art. Although, The present invention has been described by way of example, and it should be understood that the terms used herein are goods' description &lt; essence but not limitation. Furthermore, the present invention has been described in terms of preferred embodiments. Describe, but it is understandable that a person skilled in the art can apply these teachings to cause the eighth of this month he can underestimate. For example, the volume ratio between the doping gas can be appropriately replaced as shown in the example The doping gas PH3 of the example provides η soil doping. Other n-type doping gases can be used in the present invention. For example, B2H6 I p-type doping gas can be used in the present invention. The hydrogen system of the example is less than NH3. Reduction, therefore, is mainly used as a carrier gas, although traditionally, hydrogen is used to produce amorphous silicon. Other carrier gases that are less reduced than nitrogen-containing gases can be R H2. Examples of such carrier gases are argon and helium. Furthermore, even though the PECVD process is used to deposit layers in field emission display devices, other processes such as CVD can also be used to deposit amorphous silicon with controlled conductivity as the main film in other semiconductor devices. The examples are within the scope of patent application. Page 22 This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back? Matters before filling out this page) --- -Order ---------.

Claims (1)

8 8 8 8 ABCD Project No. 9 / Year & Month Amendment Application Patent Scope (Please read the precautions on the back before writing this page) 1 · Form a film based on amorphous silicon on the substrate In a method, the substrate is located in a deposition chamber, and the film has a tensile stress between 108 and 109 dyne / cm 2. The method includes at least: 51 silicon-based volatiles enter the deposition chamber; a conductivity An increase in volatiles is introduced into the deposition chamber, and the conductivity of 5 plus volatiles includes one or more components used to increase the conductivity of the amorphous film as the main film; and an inductive reduction of volatiles is introduced into the deposition chamber, the The conductivity reduction volatiles include one or more components to reduce the conductivity of the amorphous shredded main film; wherein the conductivity increases the flow rate ratio of the volatiles to the conductivity reduction volatiles introduced into the deposition chamber (the conductivity Increasing volatiles: The conductivity decreases volatiles) ranging from about 1: 1 to about 10,000; thereby forming the amorphous silicon-based film on the substrate. 2. The method according to item 1 of the scope of patent application, wherein the above flow rate ratio is selected to achieve a film resistivity of 103 to 107 ohm-cm. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3. The method described in item 1 of the scope of patent application, wherein the above-mentioned increase in conductivity includes volatiles and the decrease in conductivity includes ammonia, scales and ammonia are introduced into the sediment In the chamber, a flow rate ratio range of 1 ·· 1000 to 1 ·· 10 (Teng: ammonia) was used. 4. The method as described in item 丨 of the scope of patent application, in which the above-mentioned electrical conductivity on page 23 applies to the Chinese National Standard (CNS) A4 specification (210X297 mm) abcc ^ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperative System 525228 6. The scope of patent application increases. Volatile matter contains phosphine and conductivity decreases. Volatile matter contains methane. Phosphine and methane are introduced into the deposition chamber with a flow rate ratio of more than 100: 1 (phosphine: methane). 5. The method according to item 丨 of the scope of patent application, wherein the above-mentioned increased conductivity volatiles include a dopant. 6. The method according to item 5 of the scope of patent application, wherein the above-mentioned dopants include n-type dopants. 7. The method according to item 6 of the scope of patent application, wherein the above-mentioned n-type dopant comprises a phosphine. 8. The method according to item 5 of the patent application, wherein the dopant comprises a P-type dopant. 9. The method according to item 8 of the scope of patent application, wherein the above-mentioned p-type dopant contains boron. 10 · The method described in item 1 of the scope of the patent application, wherein the above-mentioned amorphous silicon-based film system is characterized by an energy band gap, and the conductivity decreases. The volatiles include an energy band increase component, which is relatively similar to The film formed in this case increases the band gap of the amorphous silicon as the main film, but does not have the band gap increasing component. Page 24 This paper size applies Chinese National Standard (CNS) A4 (210X297 mm) C Please read the precautions on the back before filling out this page) Order 525228 AB CD Patent Application Scope (Please read the precautions on the back first (Fill in this page again) 1 1 · The method described in item 1 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include nitrogen. 12. The method according to item 11 of the scope of the patent application, wherein the above-mentioned conductivity reduction volatiles include ammonia, N2 or N20. 1 3 · The method according to item 1 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include N20. 14. The method as described in item 1 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include carbon. 15. The method according to item 14 of the scope of the patent application, wherein the above-mentioned conductivity reduction volatiles include methane. 16 · The method as described in item 1 of the scope of patent application, wherein the above-mentioned fragmentation is that the main film contains silane, the conductivity increases and volatiles include phosphine, and the conductivity decreases and volatiles include ammonia. Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 17 · The method described in item 1 of the scope of the patent application, wherein the above-mentioned chip contains silane as the main film, the conductivity increases, the volatiles include phosphine, and the conductivity decreases the volatility The substance contains methane. Page 25 This paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) 525228 ABCD patent application scope 18. The method described in item 1 of the patent application scope further includes reducing a second conductivity to reduce volatiles Into the deposition chamber. (Please read the precautions on the back before filling out this page) 1 9 · The method described in item 18 of the scope of patent application, wherein the above-mentioned attack contains a silane as the main film, the conductivity increases and the volatiles contain a phosphine. A conductivity reduction volatile includes ammonia, and the second conductivity reduction volatile includes methane. 20. The method according to item 1 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has a film resistivity of 105 to 106 ohm-cm. 2 1. The method according to item 1 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has a film resistivity of 102 to 104 ohm-cm. 22. The method according to item 1 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has a film resistivity of 107 to 101 Gohm-cm. 23. The method according to item 1 of the patent application scope, further comprising the step of introducing hydrogen into the deposition chamber. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 24. The method as described in item 1 of the scope of patent application, wherein the above-mentioned introduction step includes introducing the hydrogen gas into the deposition chamber at a flow rate of about 1,000 to 1,500 sccm. Page 26 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 525228 Patent application scope 25. The method described in item 1 of the patent application scope further includes the step of heating the substrate to a temperature of about 200 ° C to 400 ° C. 26. The method according to item 1 of the scope of patent application, further comprising the step of heating the substrate to a temperature of about 3001 to 350 ° C. 2 7 • The method described in item 1 of the scope of patent application, wherein the above-mentioned substrate is rectangular, and its size is about 360 mm by 465 mm. 2 8. The method as described in item 1 of the scope of the patent application, wherein the amorphous-based film is formed on the substrate at a deposition rate of about 135 to 194 nanometers per minute. 29. A method for forming an amorphous silicon-based film on a substrate, wherein the substrate is used in a field emission display device, and the substrate is located in a deposition chamber, the method includes at least: introducing silicon as a main volatilizer Into the deposition chamber; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page). Introduce a conductivity-increasing volatile matter into the deposition chamber. The conductivity-increasing volatile matter contains a Or most of the components used to increase the conductivity of the amorphous silicon as the main film; and introducing a conductivity reduction volatiles into the deposition chamber, the conductivity reduction volatiles contain one or more components to reduce the amorphous silicon as the main component The conductivity of the film is used to form the amorphous-based film on the substrate. Page 27 This paper size applies to China National Standard (CNS) A4 (210x297 public love) 525228 Patent Application Scope Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 30. A method for forming an amorphous hard film on a substrate, wherein the film is a component of a flat panel display device, and the substrate is In the deposition chamber, the method includes at least: introducing silicon into the deposition chamber as a main volatile substance; introducing a conductivity-increasing volatile substance into the deposition chamber, the conductivity-increasing volatile substance including one or most of which is mainly used to increase amorphous silicon; A component of film conductivity; and introducing a conductivity-reducing volatiles into the deposition chamber, the conductivity-reducing volatiles containing one or more components to reduce the conductivity of the amorphous silicon-based film to form the amorphous silicon The main film is on the substrate. 31. A method of forming an amorphous silicon-based film on a substrate, wherein the film is a component of a field emission display device, the method includes at least: introducing hard-based volatiles into the deposition chamber; at a first flow rate Next, a conductivity-increasing volatile substance is introduced into the deposition chamber, and the conductivity-increasing volatile substance includes one or more components for increasing the conductivity of the amorphous silicon-based film; at a second flow rate, a conductivity is reduced Volatile substances are introduced into the deposition chamber, and the conductivity reduction volatiles include one or more components for reducing the conductivity of the amorphous silicon-based film; and adjusting the first flow rate and the second flow rate such that the first and The ratio of the second flow rate ranges from about 1: 1 to about 1: 1. Based on page 28, this paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ... .Φ ......... Order ......... line · Jing Jing first read the notes on the back before filling out this page) 525228 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 patent application scope to form this amorphous silicon-based film on the On the timber. (Please read the notes on the back before filling this page) 32. The method described in item 31 of the scope of patent application, in which the above-mentioned amorphous silicon-based film has a film resistivity of 103 to 107 ohm-cm. 3 3. The method according to item 31 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has a film resistivity of 105 to 106 ohm-cm. 3 4. The method according to item 31 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has a film resistivity of 102 to 104 ohm-cm. 35. The method as described in item 31 of the scope of patent application, wherein the above-mentioned amorphous silicon-based film has 107 to 101. Ohm-cm film resistivity. 36. The method according to item 31 of the scope of patent application, wherein the above-mentioned increase in conductivity includes volatiles and the reduction of volatiles includes ammonia, and the flow rate ratio of the phosphine and ammonia is about 1 ·· 1000 to about 1 ·· 1 0. 37. The method according to item 31 of the scope of patent application, wherein the above-mentioned increase in conductivity includes volatiles, and the decrease in conductivity includes methane, and the flow rate ratio of the phosphine and methane is about 1 ·· 100 to about 1 ·· 1. 3 8. The method according to item 31 of the scope of patent application, wherein the above-mentioned volatile matter with increased conductivity includes a dopant. Page 29 This paper size applies to China National Standard (CNS) A4 (210X297 mm) 525228 Patent application scope 9. The method according to item 38 of the patent application scope, wherein the above-mentioned dopant includes an n-type dopant. 40. The method as described in claim 39, wherein the n-type dopant includes phosphorus. 41. The method of claim 39, wherein the dopant comprises a P-type dopant. (Please read the notes on the back before filling this page) 42. The type dopant includes a side as claimed in item 41 of the patent application scope. Factory; I order 43 · The method described in item 31 of the scope of patent application, wherein the above-mentioned amorphous chip is characterized by an energy band gap, and the conductivity decreases and the volatiles include an energy band gap increasing component It is used to increase the band gap of the amorphous silicon-based film as compared with a film formed in a similar situation without the band gap increasing component. 44. The method according to item 31 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include nitrogen. 45. The method according to item 44 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include ammonia, N2 or N20. Page 30 This paper size applies to China National Standard (CNS) A4 (210X297 mm) line Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228 ABCD Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. Scope of patent application 46. The method described in item 31 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include carbon. 47. The method according to item 46 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include methane. 48. The method as described in item 31 of the scope of the patent application, wherein the above-mentioned silicon is a main film including crushed burning, the conductivity is increased, volatiles include phosphine, and the conductivity is decreased, volatiles include ammonia. 49. The method according to item 31 of the scope of the patent application, wherein the above-mentioned silicon is a main film containing silane, the conductivity is increased, volatiles include phosphine, and the conductivity is decreased, volatiles include methane. 50. The method according to item 31 of the scope of patent application, further comprising introducing a second conductivity-reducing volatile substance into the deposition chamber. 5 1 · The method according to item 50 of the scope of patent application, wherein the above-mentioned silicon includes a silane as the main film, the conductivity increases with volatiles including phosphine, the first conductivity decreases with volatiles including ammonia, and the second conductivity Reduce the rate of volatiles containing methane. 52. The method described in item 31 of the scope of patent application, which is also included on page 3 of this page. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out (This page) 525228 ABCD Patent application scope The step of introducing hydrogen into the deposition chamber at a flow rate. (Please read the notes on the back before filling this page) 53. The method described in item 52 of the scope of patent application, wherein the above-mentioned flow rate is about 1000 to 1500 sccm. 54. The method as described in item 31 of the patent scope of Shenyang, further comprising the step of heating the substrate to a temperature of about 200 ° C to 400 ° C. 55. The method of claim 31, further comprising heating the substrate to a temperature of about 300. (: Step to 350 ° C. May. 56. The method as described in item 31 of the scope of patent application, wherein the stress of the silicon-based film on the substrate is between 108 and 109. Line / 57 cm. Line 1 57. A method for forming a film mainly composed of amorphous particles on a substrate, the method includes at least: maintaining a silicon-based volatile substance at a first partial pressure; the wisdom of the Ministry of Economic Affairs Printed by the Property Cooperative Consumer Cooperative to maintain the increased conductivity of volatiles at the second partial pressure. The increased conductivity of volatiles contains one or more of the components used to increase the conductivity of the amorphous film as the main film; reduce the conductivity The volatiles are maintained at a third partial pressure, and the conductivity reduction volatiles contain one or more components to reduce the conductivity of the crystal-grown silicon-based film; and page 32 525228 A8 B8 C8 D8 Shen Shenqing's patent scope trims the first, second, and second partial pressures to form the amorphous silicon-based film on the I # L and M substrates, making the silicon to be The stress of the main film is between 10s and 0! m, 10 dyne / cm2. 58. The method described in item 57 of the patent scope, further comprising maintaining the total partial pressure within the range between about 0.5 Torr to 5 Torr. 59. The method according to item 58 of the scope of patent application, further comprising maintaining the deposition to the internal total pressure of about 15 Torr to 2.5 Torr. 60. A method for forming an amorphous silicon-based film on a substrate, wherein the film is a component of a flat panel display device, the method includes at least: maintaining a silicon-based volatile at a first partial pressure ; Maintaining a conductivity-increasing volatile at a second partial pressure, the conductivity ^ adding volatiles comprising—or most of the components used to increase the conductivity of the amorphous film as the main film; maintaining a conductivity-reducing volatile at the first Three-part pressure, the conductivity reduction volatiles contain one or more components to reduce the conductivity of the amorphous film; and adjust the -ns third-part pressure to form the amorphous dream-based film in the On the substrate, the resistivity of the amorphous silicon as the main film is about 103 to 107 ohm-cm. 61 · —Amorphous silicon is formed mainly by plasma-enhanced chemical vapor deposition processing Page 33 ------, ·!, ....... 0 ......... Order ......... line · (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 525228 The method for applying a patent to a film on a substrate, which is located in a deposition chamber at least includes: (Please read the precautions on the back before filling this page) Introduce silicon-based volatiles into the deposition chamber; The increased volatiles are introduced into the deposition chamber, the conductivity; the added volatiles include one or more of the components used to increase the conductivity of the amorphous silicon as the main film; and the reduced volatiles are introduced into the deposition chamber, the The conductivity reduction volatiles include a bad &amp; 8 ^ α or most components to reduce the conductivity of the amorphous silicon based film; wherein: the plasma power of the plasma enhanced chemical vapor deposition process is limited to about 0.18 to 0.36 W / cm2. 62 · A kind of field emission display device, which has an amorphous second-based film. The resistivity of the crystalline silicon-based film is about 103 to 107 ohm · cm. The amorphous silicon-based film contains a conductive material. Increased dopant and a less conductive dopant. % Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 63. The field emission display device described in item 62 of the scope of patent application, where the above-mentioned "conductivity increase dopant is n-type dopant or p-type impurity. 64. The field emission display device according to item 62 of the scope of the patent application, wherein the above-mentioned conductivity increasing dopant includes boron or an arm. Page 34 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210X297 cm) 525228 AB CD 、 、 、 The Intellectual Property Bureau of the Ministry of Economic Affairs employee consumer cooperative prints the scope of patent application 65 The field emission display device described above, wherein the above-mentioned conductivity reduction volatiles include nitrogen or carbon. 6 6. The field emission display device according to item 62 of the scope of patent application, wherein the above-mentioned amorphous silicon is mainly deposited on a substrate. 67. The field emission display device according to item 62 of the scope of patent application, wherein the stress of the amorphous silicon-based film is between about 1 08 to 1 09 dyne / cm 2. 68. The field emission display device according to item 62 of the scope of patent application, wherein the above-mentioned amorphous silicon has a resistivity of about 105 to 106 ohm-cm as a main film. 69 · —An electronic device having an amorphous silicon-based film having a resistivity of about 103 to 107 ohm-cm, wherein the amorphous silicon-based film contains a conductivity-increasing dopant and a Electrical conductivity reduces dopants. 70. The electronic device according to item 69 of the application, wherein the conductivity-increasing dopant is an n-type dopant or a p-type dopant. 71. The electronic device described in item 69 of the scope of patent application, in which the paper size on page 35 above is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page ) 525228 A8 B8 CS 6. Scope of patent application The dopant with increased conductivity contains arsenic or phosphorus. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 72. The electronic device described in item 69 of the scope of patent application, wherein the above-mentioned reduced conductivity includes nitrogen or carbon. 73. The electronic device according to item 69 of the claim, wherein the above-mentioned amorphous particles are deposited on a substrate as a main film. 74. The electronic device according to item 69 of the scope of the patent application, wherein the stress of the aforesaid amorphous chip as the main film is between about 108 and 109 dyne / cm 2. 75. The electronic device according to item 69 of the scope of patent application, wherein the above-mentioned amorphous chip has a resistivity of about 105 to 106 ohm-cm as a main film. 76 · —A flat panel display device having an amorphous silicon as the main film, the resistivity of the amorphous silicon as the main film is about 103 to 107 ohm-cm, and the amorphous silicon as the main film contains a conductivity Increase the dopant and decrease the dopant with a conductivity. 77. The flat panel display device according to item 76 of the scope of application for a patent, wherein the above-mentioned conductivity increasing dopant is an n-type dopant or a p-type dopant. Page 36 The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) ---- (Please read the precautions on the back before filling this page)-, OK-8 8 8 8 AB CD 525228 VI, Patent application scope 78. The flat panel display device according to item 76 of the patent application scope, wherein the above-mentioned conductivity increasing dopant includes boron or phosphorus. 79. The flat panel display device according to item 76 of the scope of patent application, wherein the above-mentioned conductivity reduction volatiles include nitrogen or carbon. 80. The flat panel display device as described in item 76 of the scope of patent application, wherein the above-mentioned amorphous silicon is mainly deposited on a substrate. 8 1 · The flat panel display device according to item 76 of the scope of the patent application, wherein the stress of the amorphous silicon film as described above is between about 10 08 and 10 09 dyne / cm 2. 82. The flat panel display device according to item 76 of the scope of patent application, wherein the above-mentioned amorphous silicon has a resistivity of about 105 to 106 ohm-cm as a main film. (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Page 37 This paper size applies to China National Standard (CNS) A4 (210X297 mm)