JPS56111258A - Thin film semiconductor device - Google Patents

Thin film semiconductor device

Info

Publication number
JPS56111258A
JPS56111258A JP16080A JP16080A JPS56111258A JP S56111258 A JPS56111258 A JP S56111258A JP 16080 A JP16080 A JP 16080A JP 16080 A JP16080 A JP 16080A JP S56111258 A JPS56111258 A JP S56111258A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
formed
ionic
si3n4
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16080A
Inventor
Seiichi Iwamatsu
Original Assignee
Chiyou Lsi Gijutsu Kenkyu Kumiai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

PURPOSE:To protect a channel region from ionic contaminated materials, by forming a monocrystalline semiconductor film with an intervention of SiO2 film on an Si3N4 substrate or film and forming an active region thereon. CONSTITUTION:An SiO2 film 12 is formed on an Si3N4 film 11 which is formed on a monocrystalline Si substrate 10. A P type monocrystalline film 13 is formed on the film 12. And on the film 12, a gate insulating SiO2 film 14 and a polycrystalline Si film 15 as a gate electrode are formed, and a source region 16 and a drain region 17 are formed with the films 15, 14 as masks. In a thin film insulated gate FEt with such an arrangement, because the Si3N4 film 11 between the substrate 10 and the film 12 prevent the intrusion of the ionic contaminated materials to the film 12, the channel region formed in the film 13 as an active region can be protected against the ionic contaminated materials.
JP16080A 1980-01-07 1980-01-07 Thin film semiconductor device Pending JPS56111258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16080A JPS56111258A (en) 1980-01-07 1980-01-07 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16080A JPS56111258A (en) 1980-01-07 1980-01-07 Thin film semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111258A true true JPS56111258A (en) 1981-09-02

Family

ID=11466283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16080A Pending JPS56111258A (en) 1980-01-07 1980-01-07 Thin film semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111258A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPS60170972A (en) * 1984-02-15 1985-09-04 Sony Corp Thin film semiconductor device
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base
US6383849B1 (en) * 1996-06-29 2002-05-07 Hyundai Electronics Industries Co., Ltd. Semiconductor device and method for fabricating the same
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
US6645826B2 (en) 1998-12-29 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6972435B2 (en) 1996-06-04 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Camera having display device utilizing TFT
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7019385B1 (en) 1996-04-12 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7531839B2 (en) 2001-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device having driver TFTs and pixel TFTs formed on the same substrate
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103778A (en) * 1975-03-10 1976-09-13 Nippon Telegraph & Telephone Handotaisochito sonoseizohoho

Cited By (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58147070A (en) * 1982-02-25 1983-09-01 Mitsubishi Electric Corp Field effect transistor and manufacture thereof
JPH023308B2 (en) * 1982-02-25 1990-01-23 Mitsubishi Electric Corp
JPS60170972A (en) * 1984-02-15 1985-09-04 Sony Corp Thin film semiconductor device
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7642584B2 (en) * 1991-09-25 2010-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6979840B1 (en) 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US7781271B2 (en) 1992-03-26 2010-08-24 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7169657B2 (en) 1992-03-26 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH07273031A (en) * 1994-11-16 1995-10-20 Agency Of Ind Science & Technol Manufacture of silicon substrate
US7838968B2 (en) 1996-04-12 2010-11-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US7019385B1 (en) 1996-04-12 2006-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating same
US6979841B2 (en) 1996-06-04 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and fabrication method thereof
US8928081B2 (en) 1996-06-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US8405149B2 (en) 1996-06-04 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US6972435B2 (en) 1996-06-04 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Camera having display device utilizing TFT
US7414288B2 (en) 1996-06-04 2008-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US6383849B1 (en) * 1996-06-29 2002-05-07 Hyundai Electronics Industries Co., Ltd. Semiconductor device and method for fabricating the same
US6635927B2 (en) 1996-06-29 2003-10-21 Hyundai Electronics Industries Co., Ltd. Semiconductor device and method for fabricating the same
JPH104061A (en) * 1997-03-13 1998-01-06 Agency Of Ind Science & Technol Method of manufacturing silicon base
US7132686B2 (en) 1998-12-29 2006-11-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7476577B2 (en) 1998-12-29 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7015505B2 (en) 1998-12-29 2006-03-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6645826B2 (en) 1998-12-29 2003-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US7855416B2 (en) 1999-04-30 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6940124B2 (en) 1999-04-30 2005-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7456474B2 (en) 1999-04-30 2008-11-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having insulating film
US6461899B1 (en) 1999-04-30 2002-10-08 Semiconductor Energy Laboratory, Co., Ltd. Oxynitride laminate “blocking layer” for thin film semiconductor devices
US7531839B2 (en) 2001-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device having driver TFTs and pixel TFTs formed on the same substrate
US8017951B2 (en) 2001-02-28 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a conductive film having a tapered shape
US8242508B2 (en) 2001-02-28 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device

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