JPS6418248A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6418248A
JPS6418248A JP17443287A JP17443287A JPS6418248A JP S6418248 A JPS6418248 A JP S6418248A JP 17443287 A JP17443287 A JP 17443287A JP 17443287 A JP17443287 A JP 17443287A JP S6418248 A JPS6418248 A JP S6418248A
Authority
JP
Japan
Prior art keywords
oxide film
substrate
layer
mechanical
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17443287A
Other languages
Japanese (ja)
Inventor
Mitsutaka Morimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP17443287A priority Critical patent/JPS6418248A/en
Publication of JPS6418248A publication Critical patent/JPS6418248A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To form a uniform thin layer without being affected by an irregularity in the thickness of a semiconductor substrate by a method wherein a mechanical and chemical polishing operation of the rear of the semiconductor substrate is stopped at the rear surface of a buried insulating layer by using the semiconductor substrate where the buried insulating layer has been formed over the whole surface of the substrate. CONSTITUTION:Oxygen ions are implanted into the whole surface of a p-type silicon substrate 11; after that, a buried oxide film layer 12 composed of a silicon oxide film by an annealing operation is formed; an n-channel MOS transistor 13, a wiring part 14 and an insulating film 15 composed of the silicon oxide film are formed. Then, a supporting silicon substrate 16 is bonded onto the insulating film 15 by using an epoxy resin or the like; the silicon substrate 11 is polished from its rear by a mechanical and chemical polishing method. Because the buried oxide film layer 12 exists, the mechanical and chemical polishing operation is stopped at the rear surface of the buried oxide film layer 12. By this setup, even when the thickness of the substrate is irregular, a uniform thin layer can be formed.
JP17443287A 1987-07-13 1987-07-13 Manufacture of semiconductor device Pending JPS6418248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17443287A JPS6418248A (en) 1987-07-13 1987-07-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17443287A JPS6418248A (en) 1987-07-13 1987-07-13 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6418248A true JPS6418248A (en) 1989-01-23

Family

ID=15978429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17443287A Pending JPS6418248A (en) 1987-07-13 1987-07-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6418248A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684643A1 (en) * 1994-05-24 1995-11-29 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices in an active layer on an support substrate
JPH09260669A (en) * 1996-03-19 1997-10-03 Nec Corp Semiconductor device and manufacture thereof
EP0810659A3 (en) * 1996-05-28 1999-08-04 Harris Corporation Semiconductor packaging apparatus and method
JP2005109498A (en) * 2003-09-30 2005-04-21 Internatl Business Mach Corp <Ibm> Three dimensional cmos integrated circuit having device layer constituted on wafer with different crystal orientation
JP2009212530A (en) * 1999-12-07 2009-09-17 Alcatel-Lucent Usa Inc Method for fabricating integrated circuit device
JP2013191639A (en) * 2012-03-12 2013-09-26 Nippon Hoso Kyokai <Nhk> Laminated semiconductor device and manufacturing method of the same
JP2015095517A (en) * 2013-11-11 2015-05-18 日本放送協会 Laminate type integrated circuit, and method for manufacturing the same
JP2016062903A (en) * 2014-09-12 2016-04-25 日本放送協会 Laminated semiconductor element and manufacturing method thereof
JP2017098573A (en) * 2011-06-22 2017-06-01 ペレグリン セミコンダクター コーポレイション Integrated circuit having component on both sides of selected substrate and manufacturing method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0684643A1 (en) * 1994-05-24 1995-11-29 Koninklijke Philips Electronics N.V. Method of manufacturing semiconductor devices in an active layer on an support substrate
BE1008384A3 (en) * 1994-05-24 1996-04-02 Koninkl Philips Electronics Nv METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES WITH SEMICONDUCTOR ELEMENTS MADE IN A LAYER SEMICONDUCTOR MATERIAL APPLIED ON A BEARING PLATE.
JPH09260669A (en) * 1996-03-19 1997-10-03 Nec Corp Semiconductor device and manufacture thereof
EP0810659A3 (en) * 1996-05-28 1999-08-04 Harris Corporation Semiconductor packaging apparatus and method
JP2009212530A (en) * 1999-12-07 2009-09-17 Alcatel-Lucent Usa Inc Method for fabricating integrated circuit device
JP2005109498A (en) * 2003-09-30 2005-04-21 Internatl Business Mach Corp <Ibm> Three dimensional cmos integrated circuit having device layer constituted on wafer with different crystal orientation
JP2017098573A (en) * 2011-06-22 2017-06-01 ペレグリン セミコンダクター コーポレイション Integrated circuit having component on both sides of selected substrate and manufacturing method thereof
JP2013191639A (en) * 2012-03-12 2013-09-26 Nippon Hoso Kyokai <Nhk> Laminated semiconductor device and manufacturing method of the same
JP2015095517A (en) * 2013-11-11 2015-05-18 日本放送協会 Laminate type integrated circuit, and method for manufacturing the same
JP2016062903A (en) * 2014-09-12 2016-04-25 日本放送協会 Laminated semiconductor element and manufacturing method thereof

Similar Documents

Publication Publication Date Title
DE3171252D1 (en) Method for making an electrical contact to a silicon substrate through a relatively thin layer of silicon dioxide on the surface of the substrate and method for making a field effect transistor
JPS647548A (en) Manufacture of semiconductor device
JPS6418248A (en) Manufacture of semiconductor device
IE812339L (en) Device isolation in silicon semiconductor substrates
JPS6437031A (en) Semiconductor device
JPS5516464A (en) Method of forming wafer for semiconductor device
JPS5787174A (en) Semiconductor integrated circuit device
MY121209A (en) Semiconductor device and production thereof.
EP0348783A3 (en) Process of making discrete type substrates
WO1996030940A3 (en) METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE WITH BiCMOS CIRCUIT
JPS6489457A (en) Manufacture of semiconductor device
JPS6472523A (en) Manufacture of semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
TW360975B (en) Semiconductor device having field isolating film of which upper surface is flat and method thereof
JPS5261960A (en) Production of semiconductor device
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS6467935A (en) Manufacture of semiconductor device
JPS57109353A (en) Semiconductor device
JPS5762538A (en) Manufacture of semiconductor device
JPS6446976A (en) Manufacture of semiconductor integrated circuit device
JPS57210657A (en) Array substrate for display device
JPS55145356A (en) Fabricating method of semiconductor device
JPS56105651A (en) Manufacture of semiconductor device
JPS6451635A (en) Semiconductor integrated circuit device and manufacture thereof
JPS5656682A (en) Manufacture of semiconductor device