TWI443718B - 使用基底製造太陽能電池的方法 - Google Patents

使用基底製造太陽能電池的方法 Download PDF

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TWI443718B
TWI443718B TW098107127A TW98107127A TWI443718B TW I443718 B TWI443718 B TW I443718B TW 098107127 A TW098107127 A TW 098107127A TW 98107127 A TW98107127 A TW 98107127A TW I443718 B TWI443718 B TW I443718B
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Nicholas P T Bateman
Paul J Murphy
Paul Sullivan
Atul Gupta
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Varian Semiconductor Equipment
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Description

使用基底製造太陽能電池的方法
本發明是關於離子植入，特別是關於太陽能電池的離子植入。
離子植入是用以將改變導電率的雜質引入到半導體基底(substrate)的標準技術。在離子源中，所需的雜質材質被離子化。離子被加速以形成具有特定能量的離子束，並且離子束被導引到基底的表面。離子束中的高能離子穿透半導體材料的主體並埋入於半導體材質的晶格中，以形成具有所希望的導電率的一區域。
太陽能電池基本上是以與其他半導體元件相同的製程所製成，且時常使用矽為基底材料。半導體太陽能電池為一簡單元件，其具有一內建電場而可分離在半導體材料中由吸收光子所產生之電荷載子(charge carrier)。此電場是由P-N接面(二極體)的形成所產生，其中P-N接面是藉由摻雜不同半導體材料產生。在半導體基底的一部分(例如表面區域)摻雜相反極性的雜質會形成一P-N接面(p-n junction)，其可用為一轉換光源為電力的太陽能元件。
圖3表示於一太陽能電池的第一實施例以及一代表基底300之剖面圖。光子301由一上表面305進入一太陽能電池300，如箭頭所示。這些光子通過一抗反射塗膜310，其設計以最大化穿透基底300的光子數，並最小化被反射遠離基底的光子數。
詳細而言，基底300被形成以獲得一P-N接面320。雖然在其他範例中，接面不一定平行於表面，但此接面實質上平行於基底300之上表面305。太陽能電池的製造過程中，光子經由一高摻雜區域，也就是一射極330，進入基底。在一些實施例中，射極330可為一N型摻雜區域，而在其他實施例中，射極330可為一P型摻雜區域。具有充分能(高於半導體之能帶隙)的光子能夠促動位於半導體材料之共價帶的一電子至導電帶。與此自由電子結合的是在共價帶中對應的一正電荷電洞。為了產生可驅動一外接負載的一光電流，這些電子-電洞(e-h)對需要被分離，此過程是以P-N接面的內建電場完成。因此，P-N接面的耗乏區所產生的任一電子電洞(e-h)對都會被分開，而任何其它擴散至元件之耗乏區的少數載子(minority carrier)也會同樣的被分開。由於多數的入射光子會被吸收至元件的近表面區域，產生於射極的少數載子需要擴散過射極的深度以到達耗乏區並被掃至另一邊。因此，為最大化光生電流的收集以及最小化載子於射極中再結合的機會，使用極淺的射極330會有較佳效果。
一些光子通過射極區域330並進入一基極340。當射極330為一N型區域時，基極340是一P型摻雜區域。且這些光子即可激發基極340內可自由的進入射極330的電子，而對應的電洞則是留在基極340中。另一方面，當射極330是一P型摻雜區域時，基極340則會是一N型摻雜區域。在此情形下，光子便可激發基極340內的電子，這 些電子會留在基極340中，而對應的電洞則是會移動至射極330。由此P-N接面所導致的電荷分離，可使由光子所產生的多餘載子(電子以及電洞)被用以驅動一外部負載而完成電路。
藉由一外部負載外部連接射極330到基極340，其便可導電因進而提供功率。為達成此目的，接觸(contacts)350a(基本上為金屬)會被分別置於射極330以及基極340的外表面。由於基極並不會直接接收光子，因此，其接觸350b會沿著整個外表面放置。另一方面，射極330之外表面會接收光子，而因此無法完整的被接觸所覆蓋。然而，若電子必須移動很長的距離以抵達接觸，電池的串聯電阻則會增加，使功率輸出減少。為了試著平衡這兩個因素(自由電子移動到接觸需要的距離以及暴露出的射極表面360的量)，多數的應用使用指形的接觸350a。圖4顯示圖3之太陽能電池的上視圖。形成的這些接觸相對較薄，同時延伸太陽能電池的寬度。如此一來，自由的電子不需移動很長的距離，但射極大部分的外表面都暴露於光子。在基底之前表面上的接觸指形物(fingers)350a一般為0.1mm，且具有+/- 0.1mm的準確度。這些指形物350a之間一般都有1-5mm的間隔。雖然上述的是較為常見的尺寸，但其他尺寸也是可以使用並為本發明所預期。
太陽能電池的進一步加強是高摻雜基底接觸區的加入。圖5顯示此加強版太陽能電池的一剖面圖。此電池與圖3之電池相似，但更包括高摻雜接觸區370。這些高摻雜接觸 區370對應於金屬指形物370固定在基底300的區域。這些高摻雜接觸區370的加入會使基底300和金屬指形物350a之間有更良好的接觸，並且大幅降低電池的串聯電阻。此在基底之表面上具有高摻雜接觸區的圖案通常被稱為選擇性射極設計。
藉由因為在射極層之暴露區域中的低摻質/雜質劑量所導致的再結合(recombination)，而使少數載子損耗減少，所以用於太陽能電池的一種選擇性射極設計也具有高效率電池的優點。接觸區中的較高摻雜將提供一個會排斥射極產生之少數載子的場(field)，並將少數載子推向P-N接面。
圖3所示之實施例在基底的兩端都需要接觸，進而減少可讓光子通過的前表面之可用面積。圖6顯示一太陽能電池400的一第二實施例之剖面圖。在根本上，本實施例中所包含的物理跟前述實施例十分相似，也就是一P-N接面被用以產生一電場，其可分離所產生的電子-電洞對。然而，和在整個基底產生P-N接面的前實施例不同，接面只會在基底400的部分產生。本實施例可使用一負摻雜矽基底410。在某些的實施例中，一較負偏壓的前面場420(front surface field)會由加入N型摻質至前表面所產生。此前表面則會被塗佈一層抗反射材料430(anti-reflective material)。此前表面通常會被蝕刻以產生一鋸齒或其他非平面的表面，進而增加表面積。金屬接觸或指形物470a、470b，皆位於基底的底面。底面的某些部分摻雜P型摻質以產生射極440。其他部分則是摻雜N型摻質以產生較負 偏壓的背面場450(back surface field)。背表面塗佈著一介電層460以增加背表面之反射能力。金屬指形物470a會附接到射極440，而指形物470b會附接到背面場450。圖7表示在背表面常用的金屬指形物。此類電池被稱為一指叉背接觸(interdigitated back contact,IBC)太陽能電池。
因現前的能源成本以及環境考量，太陽能電池在全世界已經變得越來越重要。任何製造或是生產高性能太陽能電池的成本的減少或者任何高性能太陽能電池的效率之改善，都會對全球的太陽能電池實體化提供正面影響。同時，也能夠讓此無污染的能源科技有更寬闊的利用空間。
目前太陽能電池的設計限制於摻質的輪廓，其輪廓可由擴散摻質至太陽能電池的矽中達成。太陽能電池的設計同時也限制於使用不同摻質以及摻雜太陽能電池不同部分的難度。其他額外摻雜步驟的成本限制商業用的太陽能電池。有鑒於此，業界需要太陽能電池中改良離子植入的方法，且特別是，一種可讓離子植入器對太陽能電池進行連續摻雜步驟的方法。
太陽能電池可使用以下所述之方法簡化其製程並減少成本。在未破真空的情況下，藉由進行連續的植入可更快速的生產太陽能電池。除此之外，連鎖離子植入的使用也可改善太陽能電池的性能。在一實施例中，進行兩次植入，其中使用的離子種類相同，但植入之間的植入能不相同。另一實施例中，基底在退火之前受到翻轉並接著於其兩面 進行植入。在又一實施例中，使用一或多個不同罩幕，且在不破真空的情況下進行連續的植入。
圖1為可提供離子以摻雜一選擇的材料之一電漿摻雜系統(plasma doping system)100的方塊圖。圖2為可提供離子以摻雜一選擇的材料之一光束線離子植入器(beam-line ion implanter)200的方塊圖。本發明所屬技術領域中的人員應理解的是所述電漿摻雜系統100與所述光束線離子植入器200分別只是提供離子以摻雜一選擇材料的不同電漿摻雜系統和光束線離子植入器的其中一種範例。這種製程也可以用其他離子植入系統進行，例如一非質量分析流體植入器(non-mass analyzed flood implanter)、其他基底或半導體晶圓處理設備；上述系統中的兩個或兩個以上的組合。
請參照圖1，電漿摻雜系統100包括定義一圍閉體積(enclosed volume)103之一處理室102。一平台134可被放置於處理室102中，以支撐一基底138。在一範例中，基底138可為具有一盤形的一半導體基底，例如於一實施例中，其可為直徑300毫米(mm)的一矽晶圓。此基底138可為一太陽能電池。本基底138可經由靜電力或機械力被鉗至平台134的一平面。在一實施例中，平台134可包括用以連接至基底138的多個導電接腳(未展示)。
一氣體源(gas source)104經由一質量流控制器(mass flow controller)106提供一摻質氣體(dopant gas)至處理室102之內部體積103。一氣體阻流板(baffle)170位於處理室 102，以讓氣體源104的氣體流轉向。一壓力表(pressure gauge)108測量處理室102內的壓力。一真空幫浦(vacuum pump)112經由處理室102的一排氣口110將廢氣自處理室102排出。一排氣閥114藉由排氣口110控制排氣傳導。
電漿摻雜系統100可進一步包括一氣壓控制器116，其電性連接至質量流控制器106、壓力表108以及排氣閥114。氣壓控制器116可藉由排氣閥114控制排氣傳導或是由反應壓力表108的一回饋迴路(feedback loop)中之質量流控制器106控制一處理氣體流速率而保持在處理室102中所想要的壓力。
處理室102可具有一室頂118，其包括以一介電材料(dielectric material)形成且往平行方向延伸的一第一部分120。室頂118同時包括以一介電材料形成且從第一部分120往垂直方向延伸一高度的一第二部分122。室頂118更包括一個蓋(lid)124，其是以一導電導熱材料形成，且於平行方向延伸過第二部分122。
電漿摻雜系統100更包括一電源(source)101用以於處理室102中產生一電漿140。電源101可包括一射頻源(RF source)150例如一電源供應器(power supply)，以提供射頻功率給一平面天線(planar antenna)126和一螺旋形天線(helical antenna)146或兩者的其中之一，以產生電漿140。為了將從射頻源150轉移到RF射頻天線126以及146的功率最大化，射頻源150可藉由將射頻源150的輸出阻抗(impedance)配對至射頻天線126以及146的阻抗的一阻抗 匹配網路(impedance matching network)152耦接至天線126以及146。
電漿摻雜系統100可同時包括一偏壓電源供應器148，其電性耦接至平台134。偏壓電源供應器148被用以提供具有脈衝開關(ON and OFF)時間週期的一脈衝平台信號(pulsed platen signal)以加偏壓於平台134，而因此加偏壓於基底138，並在脈衝開的時間週期而非在脈衝關的時間週期促使離子離開電漿140接近基底138。偏壓電源供應器148可為一直流電源供應器或一射頻電源供應器。
電漿摻雜系統100更包括置於平台134周圍的一遮蔽環(shield ring)194。由於本技術領域已知此遮蔽環194可被加偏壓，以改善於基底138邊緣佈值離子分布的均勻度(uniformity)。一或多個像是一環形法拉第感應器(annular Faraday sensors)199的法拉第感應器可被放在遮蔽環194中，以感應離子束電流。
電漿摻雜系統100更包括一控制器156以及一使用者介面系統(user interface system)158。控制器156可以是或可包括一通用(general-purpose)電腦或多個通用電腦的一網路，且其可被設定以進行所希望的輸入/輸出功能。控制器156可同時包括其他電子電路學或如特定用途的積體電路、其它固線式或可設定的電子元件、個別的元件電路等的構件(components)。控制器156可同時包括通訊元件、資料儲存元件以及軟體。為了清楚說明，控制器156在此僅提供一輸出信號給電源供應器148以及150並自法拉第感應器 199接收輸入信號。所屬技術領域中具有通常知識者應知控制器156可提供輸出信號給電漿摻雜系統100的其他構件並自電漿摻雜系統接收輸入信號。使用者介面系統158可包括像是觸碰式螢幕、鍵盤、使用者指向裝置(user pointing devices)、顯示器、印表機等的裝置，讓使用者輸入指令以及/或資料以及/或藉由控制器156監視電漿摻雜系統100。
就操作上來說，氣體源104提供含有一所希望的摻質的一主要摻質氣體，以佈值入基底138。氣壓控制器116調控主要摻質氣體被提供至處理室102的速率。電源101用以在處理室102內產生電漿140。電源101可由控制器156控制。為了產生電漿140，射頻源150在至少射頻天線126、146中的其中之一共振射頻電流，以產生一振盪磁場(oscillating magnetic field)。振盪磁場將射頻電流導入處理室102。處理室102中的射頻電流激發並離子化主要摻質氣體以產生電漿140。
偏壓電源供應器148提供一脈衝平台信號，以加偏壓於平台134，也因此在脈衝平台信號的脈衝開(ON)期間，加偏壓於基底138以促使離子離開電漿140接近基底138。脈衝平台信號的頻率以及/或脈衝的工作循環可被選擇，以提供一所希望的劑量率(dose rate)。可選擇脈衝平台信號的振幅，用以提供一所希望的能量。當其他所有的參數皆相同時，較大的能量會產生較大的佈值深度(implanted depth)。
請參照圖2，圖2為可提供離子以摻雜一選擇的材料之一光束線離子植入器200的方塊圖。所屬技術領域中具有通常知識者應知光束線離子植入器200只是許多可提供離子以摻雜一選擇的材料之光束線離子植入器的其中一個範例。
一般來說，光束線離子植入器200包括一離子源280，以產生形成一離子束281的離子。離子源280可包括一離子腔室283以及包含將被離子化的一氣體之一氣體箱。接著，氣體被提供至離子腔室283，並受到離子化。形成的離子接著從離子腔室283抽出形成離子束281。離子束281被引導至一分解磁鐵(resolving magnet)282的兩極之間。一電源供應器被連結至離子源280的一萃取電極(extraction electrode)，並在一高電流離子植入器中提供一可調整電壓，其例如在0.2keV與80keV之間。因此，來自離子源280的被個別充電的離子可藉由所述可調整電壓被加速至約0.2keV到80keV的能量。
離子束281通過一抑制電極(suppression electrode)284以及一接地電極285到一質量分析器(mass analyzer)286。質量分析器286包括分解磁鐵282和具有一分解孔徑(aperture)289的一罩幕電極(masking electrode)288。分解磁鐵282使離子束281中的離子轉向，而讓一所想要的離子種類之離子通過分解孔徑289。不需要的離子種類則不會通過分解孔徑289，而會被罩幕電極288擋住。在一實施例中，分解磁鐵282將所想要種類的離子轉向約90°。
所想要的離子種類的離子通過分解孔徑289而達到角度校正磁鐵(angle corrector magnet)294。角度校正磁鐵294將所想要的離子種類的離子轉向，並將離子束從一發散(diverging)離子束轉換為一帶狀離子束212(ribbon ion beam)，其實質上平行於離子軌道(ion trajectories)。在一實施例中，角度校正磁鐵294將所想要的離子種類的離子轉向70°。在一些實施例中，光束線離子植入器200更可包括加速或減速的零件(units)。
在帶狀離子束212的路徑中，一終端站(end station)211支撐一或多個工件例如基底138，而使所想要的種類的離子被植入到基底138中。基底138可為例如一矽晶圓。此基底138可為一太陽能電池。終端站211包括一平台295以支撐基底138。終端站211同時包括一掃瞄器(未顯示)，以將基底138垂直移動至帶狀離子束212剖面的長邊，進而使離子分佈於基底138的整個表面。雖然此處說明的為帶狀離子束212，但其他實施例可提供一點束(spot beam)。
離子植入器可包括所屬技術領域中具有通常知識者所知的附加構件。舉例來說，終端站211一般包括自動化工件操作設備，以將工件加入光束線離子植入器200，並在完成離子植入後將工件移除。終端站211也可包括一劑量測量系統，一電子流槍(electron flood gun)或其他已知構件。所屬技術領域中具有通常知識者應了解，在離子植入期間，被離子束橫越的整個路徑會被抽真空。在一些實施例中，光束線離子植入器200可合併離子的熱或冷植入。
進行兩次或兩次以上的植入可以增加產量(productivity)以及太陽能電池效率。這些植入是在未破真空的情況下，以相同的植入工具進行的一個「連鎖植入」，或一個馬上接續另一個的植入。除了降低成本以及改善產量和太陽能電池效能之外，本方法更可進一步改善摻質輪廓。連鎖植入可被合併至太陽能電池生產製程的方法有很多種，這些製程可在圖1之電漿摻雜系統100或是圖2之光束線離子植入器200、其他離子植入系統例如一非質量分析流體植入器、其他基底或半導體晶圓製程設備；或兩個或兩個以上系統的組合中進行。
首先，在一連鎖植入中可進行兩次或兩次以上在不同能量的植入。能量的範圍將提供摻質輪廓一個詳細裁剪(tailoring)。舉例來說，若要在例如圖3的一前接觸電池(front contact cell)中加入射極330，可進行一深、低劑量的植入，以防止接觸350a縮短接面(junction)。另一方面，也可進行一淺、高劑量的植入，以在電池表面產生一高劑量濃度。這些植入的組合產生一摻質輪廓，其可減少離開前表面而往背表面之移動。如此的輪廓也可經由產生可促使少數載子接近P-N接面的一導向電場，而使再結合(recombination)最小化。在一實施例中，在離子束接觸到平台上之太陽能電池之前加入一減速電壓(deceleration voltage)，可改變圖2之光束線離子植入器200的離子束能量。
第二，可在未移動基底的情況下，在一連鎖植入中進行不同種類的植入。在一實施例中，除了磷之外，砷也被當 作一N型摻質。接著，之後的熱製程會利用這兩個N型摻質的不同特性。舉例來說，一摻質可能可以擴散得較深入基底中，而另一個則是較接近表面，因而產生一摻質梯度。此摻質梯度有助於最小化表面的再組合。在其他實施例中，硼、砷、磷、鎵、鋁以及其它所屬技術領域中具有通常知識者熟知的種類皆可被應用。在其他實施例中，也可使用不會影響摻雜濃度的種類，也就是被稱之為非摻質(non-dopants)例如屬於Group IV的元素像是碳、矽以及鍺。雖然很難在一擴散爐中改變種類，但在一離子植入器例如圖1之電漿摻雜系統100或是圖2之光束線離子植入器200中，可藉著改變離子源、離子束線或是用以提供摻質原子的氣體或固體材料來改變種類。雖然此舉會增加圖1之電漿摻雜系統100或是圖2之光束線離子植入器200的複雜性與成本，但這些增加還是大幅小於再購買一第二植入器所需要耗費的成本。
第三，在一連鎖植入期間可改變被植入之基底的側邊(side)。藉由在植入中翻轉一基底，可在未破真空(breaking vacuum)的情況下馬上於反面進行一第二植入。此翻轉(flipping)可經由例如機器人基底操作裝置(robotic substrate handling devices)達成。在一實施例中，結合翻轉基底與改變被植入的種類的動作。舉例來說，離子被植入於如圖6所示之一指叉背接觸太陽能電池的雙面。在前表面進行一N+植入420，而在背面進行N+植入450與P+植入440。因此，前表面的植入可被進行，然後翻轉基底，以便完成 一太陽能電池的一硼背面場。在另一特定實施例中，可進行一前面場(front surface field)以及一指叉背接觸太陽能電池上的一組接觸(contacts)之植入。在另一實施例中，實施如圖6所示之N+前面場以及N+背面場。目前的擴散技術無法將不同的劑量加至一個電池的不同面。在未破真空的情況下，在基底的兩面植入可減少製造一太陽能電池所需的製程步驟。
第四，可在一連鎖植入期間改變植入的圖案。藉由在基底加入一個罩幕或是在基底提供多個罩幕，可在太陽能電池的表面進行具有不同分佈(distribution)之多種植入。這種罩幕可為一硬罩幕、蔽蔭罩幕以及模板罩幕(stencil mask)，在一些實施例中，其可阻隔基底的一些部分不受到植入。在一具體實施例中，圖5之太陽能電池的前表面受到摻雜，接著於一基底300上設置一罩幕，而僅暴露出接觸區370。接著進行高劑量的一第二植入，以改善這些區域的導電性。另一實施例中，例如圖6與圖7所示，一指叉背接觸太陽能電池之N+背面場450被植入一N型摻質，同時使用一罩幕來覆蓋一部分的表面。接著，使用一第二罩幕，其只暴露P+射極。此一罩幕顯示於圖8。在設置罩幕之後，植入一P型摻質，此一系列使用不同罩幕的植入創造出指叉背接觸太陽能電池所需的接觸圖案(contact pattern)。因此，當結合種類的改變時，可立刻進行一指叉背接觸太陽能電池所有的背接觸摻雜。在任何實施例中，所述接觸可以由此方法被摻雜在太陽能電池的前 面或後面。在成本較高下，埋入式接觸法(buried contact approach)能提供一個相似的摻雜計畫。在另一實施例中，以一罩幕進行一N++植入，接著則是在沒有一罩幕的情形下進行一N+植入。
第五，在連鎖植入後的一立即熱退火(thermal anneal)可在進行植入的相同腔室中進行。這可減少製程時間與成本。在一植入室進行的退火可為例如一閃退火(flash anneal)、雷射退火(laser anneal)、急遽熱退火(spike anneal)或其他所屬技術領域中具有通常知識者所知之退火方法。
第六，可在一群組工具(cluster tool)中進行這些連鎖摻雜。在一特定實施例中，群組工具可包括如圖1所示之多種電漿摻雜系統100。因此，連鎖植入可在多個電漿摻雜腔室內未破真空的情形下進行，或者可在單一個電漿摻雜腔室中進行多種摻雜(multiple implants)。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100‧‧‧電漿摻雜系統
101‧‧‧電源
102‧‧‧處理室
103‧‧‧圍閉體積
104‧‧‧氣體源
106‧‧‧質量流控制器
108‧‧‧壓力表
110‧‧‧排氣口
112‧‧‧真空幫浦
114‧‧‧排氣閥
116‧‧‧氣壓控制器
118‧‧‧室頂
120‧‧‧第一部分
122‧‧‧第二部分
124‧‧‧蓋
126‧‧‧平面天線
134‧‧‧平台
138‧‧‧基底
140‧‧‧電漿
146‧‧‧螺旋形天線
148‧‧‧偏壓電源供應器
150‧‧‧射頻源
152‧‧‧阻抗匹配網路
156‧‧‧控制器
158‧‧‧使用者介面系統
170‧‧‧氣體阻流板
194‧‧‧遮蔽環
199‧‧‧法拉第感應器
200‧‧‧光束線離子植入器
211‧‧‧終端站
212‧‧‧帶狀離子束
280‧‧‧離子源
281‧‧‧離子束
282‧‧‧分解磁鐵
283‧‧‧離子腔室
284‧‧‧抑制電極
285‧‧‧接地電極
286‧‧‧質量分析器
288‧‧‧罩幕電極
289‧‧‧分解孔徑
294‧‧‧角度校正磁鐵
295‧‧‧平台
300‧‧‧基底
301‧‧‧光子
305‧‧‧上表面
310‧‧‧抗反射塗膜
320‧‧‧P-N接面
330、440‧‧‧射極
340‧‧‧基極
350a、350b‧‧‧接觸
360‧‧‧射極表面
370‧‧‧高摻雜接觸區
400‧‧‧太陽能電池
410‧‧‧負摻雜矽基底
420‧‧‧前面場
430‧‧‧抗反射材料
450‧‧‧背面場
460‧‧‧介電層
470a、470b‧‧‧指形物
圖1為一種用來摻雜離子至一材料的電漿摻雜系統之方塊圖。
圖2為一種用來摻雜離子至一材料的光束線離子植入器之方塊圖。
圖3顯示習知技術之一種太陽能電池的剖面圖。
圖4顯示圖3之太陽能電池之上視圖
圖5顯示使用選擇性射極設計的一種太陽能電池之剖面圖。
圖6顯示習知技術之一種第二類型之太陽能電池的剖面圖。
圖7顯示圖6之太陽能電池的下視圖。
圖8顯示用於圖7之太陽能電池之一種罩幕。
300‧‧‧基底
301‧‧‧光子
305‧‧‧上表面
310‧‧‧抗反射塗膜
320‧‧‧P-N接面
330‧‧‧射極
340‧‧‧基極
350a、350b‧‧‧接觸
370‧‧‧高摻雜接觸區

Claims (16)

  1. 一種使用基底製造太陽能電池的方法，包括：產生一真空，其中該基底是受到植入以製造該太陽能電池；在該真空中使用一第一種類於該基底之一第一表面的整面上進行一第一離子植入；在該真空中導入具有一第一表面朝向該基底之該第一表面並與該基底之該第一表面相隔開的一罩幕，該罩幕具有多數個開口用以暴露該基底之該第一表面的相對部分；以及在該真空中使用一第二種類於該第一表面進行一第二離子植入，其中該第二種類只有植入於該基底的該第一表面之該暴露部分，且其中該第一離子佈值、該第二離子植入和導入該罩幕是在未破該真空的情況下進行。
  2. 如專利申請範圍第1項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為相同種類。
  3. 如專利申請範圍第1項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類包括多個摻質。
  4. 如專利申請範圍第1項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為不同種類。
  5. 如專利申請範圍第1項所述之使用基底製造太陽能電池的方法，其中該第一種類或該第二種類包括一非摻質。
  6. 一種使用基底製造太陽能電池的方法，包括： 產生一真空，其中該基底是受到植入以製造該太陽能電池；在該真空中使用一第一種類於該基底之一第一表面的整面上進行一第一離子植入；在該真空中翻轉該基底，以暴露該基底之一第二表面；在該真空中加入具有一第一表面朝向該基底之該第二表面並與該基底之該第二表面相隔開的一罩幕，該罩幕具有多數個開口，以暴露該基底之該第二表面的相對部分；以及在該真空中使用一第二種類於該第二表面進行一第二離子植入，其中只有該基底之該第二表面的該暴露部分被植入該第二種類，且其中該第一離子植入、該第二離子植入、翻轉該基底和加入該罩幕均是在未破該真空的情況下進行。
  7. 如專利申請範圍第6項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為相同種類。
  8. 如專利申請範圍第6項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類包括多個摻質。
  9. 如專利申請範圍第6項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為不同種類。
  10. 如專利申請範圍第6項所述之使用基底製造太陽能電池的方法，其中該第一種類或該第二種類包括一非摻質。
  11. 一種使用基底製造太陽能電池的方法，包括： 產生一真空，其中該基底是受到植入以製造該太陽能電池；在該真空中使用一第一種類於該基底之一第一表面的整面上進行一第一離子植入；在該真空中翻轉該基底，以暴露該基底之一第二表面；以及在該真空中使用一第二種類於該第二表面進行一第二離子植入，其中該第一離子植入、翻轉該基底與該第二離子植入是在未破該真空的情況下進行。
  12. 如專利申請範圍第11項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為相同種類。
  13. 如專利申請範圍第11項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類包括多個摻質。
  14. 如專利申請範圍第11項所述之使用基底製造太陽能電池的方法，其中該第一種類與該第二種類為不同種類。
  15. 如專利申請範圍第11項所述之方法，其中該第一種類或該第二種類包括一非摻質。
  16. 如專利申請範圍第11項所述之使用基底製造太陽能電池的方法，其中在該第二離子植入之前更包括在該真空中未破該真空的情況下加入一罩幕，其中該罩幕具有一第一表面朝向該基底之該第二表面並與該基底之該第二表面相隔開，且其中該罩幕具有多數個開口用以暴露該基底 之該第二表面的相對部分，使該第二種類只摻雜於該基底之該第二表面的該暴露部分。
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US7888249B2 (en) 2011-02-15
JP2011513997A (ja) 2011-04-28
EP2858126B1 (en) 2015-11-04
KR101409925B1 (ko) 2014-06-20
JP5802392B2 (ja) 2015-10-28
EP2248154B1 (en) 2015-05-06
EP2248154A4 (en) 2014-06-11
TW200949913A (en) 2009-12-01
US20100197126A1 (en) 2010-08-05
KR20100136478A (ko) 2010-12-28
US20090227094A1 (en) 2009-09-10
CN102047390A (zh) 2011-05-04
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