KR102605121B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 처리 장치 및 기판 처리 방법 Download PDFInfo
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- KR102605121B1 KR102605121B1 KR1020180125411A KR20180125411A KR102605121B1 KR 102605121 B1 KR102605121 B1 KR 102605121B1 KR 1020180125411 A KR1020180125411 A KR 1020180125411A KR 20180125411 A KR20180125411 A KR 20180125411A KR 102605121 B1 KR102605121 B1 KR 102605121B1
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Abstract
본 발명은 기판 지지 장치의 위치를 제어함으로써 기판 상의 박막 균일도를 개선시킬 수 있는 기판 처리 장치에 관한 것으로, 본 발명의 기판 처리 장치는 복수 개의 반응기들을 포함하며, 각각의 반응기는 : 기판 지지 장치; 상기 기판 지지 장치를 둘러싸는 링; 및 상기 기판 지지 장치를 이동시키기 위한 정렬 장치를 포함하며, 상기 링은 상기 기판 지지 장치가 이동함에 따라 그 일면이 상기 기판 지지 장치와 접촉되고 상기 기판 지지 장치의 미는 힘에 의해 이동 가능하도록 설치되는 것을 특징으로 한다.
Description
본 발명은 기판 처리 장치 및 기판 처리 방법에 관한 것으로, 보다 구체적으로는 기판 지지 장치의 위치를 제어함으로써 기판 상의 박막 균일도를 개선시킬 수 있는 기판 처리 장치 및 기판 처리 방법에 관한 것이다.
도 1에 도시된 바와 같이, 복수개의 반응기들(200)을 탑재한 챔버(100)에서, 반응기들의 상부(400)는 챔버(100)의 상부 벽(100a)에 연결되고, 반응기들의 하부(500)는 챔버의 하부 벽(100b)에 연결된다. 반응기의 상부(400) 및 하부(500)는 면 접촉(face-sealing)에 의해 반응공간을 형성한다.
일반적으로, 챔버(100)의 상부 벽(100a)과 하부벽(100b)은 금속 재질, 가령 알루미늄으로 이루어져 있다. 상기 챔버 상부벽(100a)의 일측에 반응기(200)에 대한 기체 공급 장치(도 3의 2)를 포함할 경우, 상기 챔버 상부벽(100a)은 기체 공급 장치를 가열하기 위한 가열 장치, 가령 삽입식 히터(catridge heater)를 포함하고(도 1에는 미도시), 상기 가열 장치를 통해 기체 공급 장치뿐만 아니라 챔버 상부벽(100a)도 일정 온도로 가열된다. 따라서 챔버 상부벽(100a)은 챔버 하부벽(100b)에 비해 온도가 높게 유지된다.
고온 공정에서, 기판 지지 장치(300)의 가열, 반응기의 상부(400) 및 챔버의 상부 벽(100a)의 가열에 의해, 챔버(100) 및 반응기(200)의 열변형이 발생한다. 그러나, 앞서 기술했듯이 챔버(100)의 상부 벽(100a)과 하부 벽(100b)의 온도차로 인하여 챔버(100)의 상부 벽(100a)과 하부 벽(100b)의 열팽창 또는 열변형 정도가 상이하다. 도 1에서 화살표로 표시된 바와 같이, 챔버(100)의 상부 벽(100a)은 하부 벽(100b)보다 열팽창 혹은 열변형 정도가 크다.
또한, 반응기의 하부(500)는 기판 지지 장치(300) 및 반응기 상부(400)로부터의 열 전도에 의해 가열되기는 하나, 반응기 상부(400)와 기계적으로 분리되어 있고, 반응기 상부(400)와 일체형이 아니므로, 반응기 상부(400)와 열평형이 이루어지지 않는다. 이에 따라, 반응기(200)의 상부(400) 및 하부(500) 또한 열변형 정도가 달라지게 된다. 도 1에서 화살표로 표시된 바와 같이, 반응기(200)의 상부(400)는 반응기(200)의 하부(500)보다 열팽창 정도가 크다. 또한, 챔버(100)의 상면을 나타내는 도 2에서 화살표(600)로 도시된 바와 같이, 반응기(200)의 상부(400)의 열팽창이 챔버(100) 주변으로 향하는 것을 알 수 있다.
이와 같이, 반응기 상부(400)를 지지하는 챔버 상부 벽(100a)과 반응기 하부(500)를 지지하는 챔버 하부 벽(100b) 간의 열팽창 차이, 그리고 반응기(200)의 상부(400) 및 하부(500) 간의 열팽창 차이로 인해, 반응기(200)의 상부(400) 및 하부(500)간의 오정렬(mismatch)이 발생하게 된다.
그 결과, 기판 지지 장치(300)와 기판 지지 장치(300)를 둘러싸는 반응기(200)의 상부(400) 내의 부품들 간의 오정렬이 발생하게 되어, 반응기 내의 기판 지지 장치의 센터링 위치(반응기 내 기판 지지 장치의 배치 중심이 반응기 내부의 공간적 대칭 중심과 동일한 경우)가 틀어질 수 있다. 이러한 경우, 증착 및 배기 시 기판 주변의 기체 흐름이 균일하지 않게 되어, 기판 상의 박막의 균일도, 특히 기판 가장자리 부에서의 박막 균일도가 일정하지 않게 되거나 저하될 수 있다. 이에 따라, 반도체 소자의 불량률이 높아질 수 있으며, 반응기 간의 공정 재현성(process reproducibility)이 저하되는 현상이 발생할 수 있다.
본 발명은, 고온 공정 시에 챔버 상부 벽과 하부 벽 간의 열팽창 차이, 그리고 반응기의 상부 및 하부 간의 열팽창 차이에 따른 기판 지지 장치의 센터링의 틀어짐을 보수하고, 기판 지지 장치와 기체 공급 제어링 사이의 갭을 일정하게 유지하여, 기판 상의 박막 균일도를 개선시킬 수 있는 기판 처리 장치 및 기판 처리 방법을 제공하고자 한다.
본 발명의 기술적 사상에 따른 실시예들의 일 측면에 따르면, 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서, 각각의 반응기는 : 상부 몸체 및; 기판 지지 장치; 및 상기 기판 지지 장치를 둘러싸고 상기 기판 지지 장치 및 상기 상부 몸체 사이에 배치되는 링을 포함하며, 상기 상부 몸체와 상기 기판 지지 장치는 반응 공간을 형성하며, 상기 기판 지지 장치의 하부 영역은 하부 공간을 형성하는 것을 특징으로 하는 기판 처리 장치가 제공될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상부 몸체는 상기 반응 공간을 향한 단차부를 포함하며, 상기 단차부는 패드를 포함하며, 상기 링은 상기 패드 상에 안착될 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 링은 상기 패드에 대해 슬라이딩 가능하도록 상기 패드 상에 안착될 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 패드의 길이는 상기 링의 반지름 방향 두께보다 길거나 같을 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 상부 몸체의 내경은 상기 링의 내경과 상기 링의 반지름 방향 두께의 합보다 작을 수 있다.
상기 기판 처리 장치의 다른 예에 따르면, 상기 링의 반지름 방향 두께는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2보다 클 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 링은 하부에 스토퍼를 더 포함할 수 있다. 상기 스토퍼는 상기 링의 내측벽과 상기 링의 하면 사이에 배치될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 상기 기판 처리 장치는 : 상기 기판 지지 장치를 이동시키기 위한 정렬 장치; 및 상기 정렬 장치와 연결되고, 그리고 상기 기판 지지 장치의 이동을 제어하기 위한 제어기를 더 포함할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 정렬 장치는 : 상기 기판 지지 장치가 삽입되는 삽입부; 및 쿨러를 더 포함할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 제어기에는 상기 링의 내경 및 상기 기판 지지 장치의 외경에 관한 정보가 입력되어 있으며, 상기 제어기는 상기 링의 내경 및 상기 기판 지지 장치의 외경에 관한 정보를 이용하여 상기 기판 지지 장치의 이동 거리를 계산할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 정렬 장치는 상기 기판 지지 장치를 상기 링에 대해 센터링하도록 구성될 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 링과 상기 기판 지지 장치 사이에 갭이 존재하며, 상기 반응 공간과 상기 하부 공간은 상기 갭을 통해 연통할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 각각의 반응기는 : 상기 반응 공간 내에 기체를 유입하는 제1 기체 유입부; 상기 하부 공간 내에 기체를 유입하는 제2 기체 유입부를 더 포함할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 제2 기체 유입부를 통해 상기 하부 공간으로 유입된 기체는 상기 제1 기체 유입부를 통해 상기 반응 공간으로 유입된 기체가 상기 갭을 통해 상기 하부 공간으로 유입되는 것을 방지할 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 각각의 반응기는 상기 상부 몸체와 연결되고 상기 기판 지지 장치의 하부를 둘러싸는 하부 몸체를 더 포함하며, 상기 제2 기체 유입부는 상기 하부 몸체 내에 배치될 수 있다.
본 발명의 기술적 사상에 의한 실시예들의 다른 측면에 따르면, 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서, 각각의 반응기는 : 기판 지지 장치; 상기 기판 지지 장치를 둘러싸는 링; 및 상기 기판 지지 장치를 이동시키기 위한 정렬 장치를 포함하며, 상기 링은 상기 기판 지지 장치가 이동함에 따라 그 일면이 상기 기판 지지 장치와 접촉되고 상기 기판 지지 장치의 미는 힘에 의해 이동 가능하도록 설치되는 것을 특징으로 하는 기판 처리 장치가 제공될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 각각의 반응기는 상부 몸체를 더 포함하며, 상기 링은 상기 상부 몸체 상에 배치되며, 상기 정렬 장치는 상기 기판 지지 장치를 이동시킴으로써 상기 상부 몸체에 대한 상기 링의 위치를 변경시킬 수 있다.
본 발명의 기술적 사상에 의한 실시예들의 다른 측면에 따르면, 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서, 각각의 반응기는 : 기판 지지 장치; 및 상기 기판 지지 장치를 둘러싸는 링을 포함하며, 상기 링은 상기 링과 상기 기판 지지 장치 사이의 갭을 조절하여, 상기 기판 처리 장치에서의 기판 처리 공정 동안, 상기 기판 지지 장치의 상부 공간과 상기 기판 지지 장치의 하부 공간 간의 기체 압력 균형 및 균일도를 제어하는 것을 특징으로 하는 기판 처리 장치가 제공될 수 있다.
상기 기판 처리 장치의 일 예에 따르면, 각각의 반응기는 상부 몸체를 더 포함하며, 상기 상부 몸체는 그 상부면에 상기 반응 공간을 향한 단차부를 포함하며, 상기 단차부는 패드를 포함하며, 상기 링은 상기 패드 상에 안착되며, 상기 패드의 길이는 상기 링의 반지름 방향 두께보다 길거나 같고, 상기 상부 몸체의 내경은 상기 링의 내경과 상기 링의 반지름 방향 두께의 합보다 작을 수 있다.
상기 기판 처리 장치의 추가 예에 따르면, 상기 링은 상기 기판 지지 장치의 미는 힘에 의해 상기 패드에 대해 슬라이딩 가능하도록 설치될 수 있다.
도 1은 복수개의 반응기들을 포함하는 챔버의 단면도를 나타낸다.
도 2는 복수개의 반응기들을 포함하는 챔버의 상면도를 나타낸다.
도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 4는 기판 지지 장치와 링 사이의 갭에서의 공정 기체와 충진 기체의 흐름을 개략적으로 나타낸다.
도 5은 기판 지지 장치가 링에 대하여 편심된 모습을 기판 지지 장치의 상면에서 본 모습이다.
도 6a 는 기판 지지 장치가 링에 대하여 센터링되었을 때 기판 지지 장치의 온도 분포를 도시하며, 도 6b는 기판 지지 장치가 링에 대하여 좌측으로 편심되었을 때 기판 지지 장치의 온도 분포를 도시한다.
도 7은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 8은 본 발명의 다른 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 9는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸다.
도 10 및 도 11은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 일부의 확대도이다.
도 12는 센터링 위치가 틀어진 기판 지지 장치의 일례를 도시한다.
도 13a 내지 도 13d는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 이용하여 도 12의 기판 지지 장치를 링에 대하여 센터링하는 과정을 도시한다.
도 14는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법에 의해 기판 지지 장치가 링에 대하여 센터링되는 과정을 기판 지지 장치의 상면에서 본 모습이다.
도 15은 센터링 위치가 틀어진 기판 지지 장치의 다른 예를 도시한다.
도 16a 내지 도 16d는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 이용하여 도 15의 기판 지지 장치를 링에 대하여 센터링하는 과정을 도시한다.
도 17및 도 18은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸다.
도 19는 2 이상의 반응기를 포함하는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 나타낸다.
도 20은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 정렬 장치를 개략적으로 나타낸다.
도 21은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 정렬 장치 지지모듈을 개략적으로 나타낸다.
도 22는 본 발명의 다른 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 23은 본 발명의 다른 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 24는 본 발명의 다른 기술적 사상에 의한 또 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 2는 복수개의 반응기들을 포함하는 챔버의 상면도를 나타낸다.
도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 4는 기판 지지 장치와 링 사이의 갭에서의 공정 기체와 충진 기체의 흐름을 개략적으로 나타낸다.
도 5은 기판 지지 장치가 링에 대하여 편심된 모습을 기판 지지 장치의 상면에서 본 모습이다.
도 6a 는 기판 지지 장치가 링에 대하여 센터링되었을 때 기판 지지 장치의 온도 분포를 도시하며, 도 6b는 기판 지지 장치가 링에 대하여 좌측으로 편심되었을 때 기판 지지 장치의 온도 분포를 도시한다.
도 7은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 8은 본 발명의 다른 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 9는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸다.
도 10 및 도 11은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 일부의 확대도이다.
도 12는 센터링 위치가 틀어진 기판 지지 장치의 일례를 도시한다.
도 13a 내지 도 13d는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 이용하여 도 12의 기판 지지 장치를 링에 대하여 센터링하는 과정을 도시한다.
도 14는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법에 의해 기판 지지 장치가 링에 대하여 센터링되는 과정을 기판 지지 장치의 상면에서 본 모습이다.
도 15은 센터링 위치가 틀어진 기판 지지 장치의 다른 예를 도시한다.
도 16a 내지 도 16d는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 이용하여 도 15의 기판 지지 장치를 링에 대하여 센터링하는 과정을 도시한다.
도 17및 도 18은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸다.
도 19는 2 이상의 반응기를 포함하는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 나타낸다.
도 20은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 정렬 장치를 개략적으로 나타낸다.
도 21은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 정렬 장치 지지모듈을 개략적으로 나타낸다.
도 22는 본 발명의 다른 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 23은 본 발명의 다른 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 24는 본 발명의 다른 기술적 사상에 의한 또 다른 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
이하, 첨부된 도면을 참조하여 본 발명의 실시예들을 상세히 설명하기로 한다.
본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 아래의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래의 실시예들로 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하며 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.
본 명세서에서 사용된 용어는 특정 실시예를 설명하기 위하여 사용되며, 본 발명을 제한하기 위한 것이 아니다. 본 명세서에서 사용된 바와 같이 단수 형태는 문맥상 다른 경우를 분명히 지적하는 것이 아니라면, 복수의 형태를 포함할 수 있다. 또한, 본 명세서에서 사용되는 경우 "포함한다(comprise)" 및/또는 "포함하는(comprising)"은 언급한 형상들, 숫자, 단계, 동작, 부재, 요소 및/또는 이들 그룹의 존재를 특정하는 것이며, 하나 이상의 다른 형상, 숫자, 동작, 부재, 요소 및/또는 그룹들의 존재 또는 부가를 배제하는 것이 아니다. 본 명세서에서 사용된 바와 같이, 용어 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.
본 명세서에서 제1, 제2 등의 용어가 다양한 부재, 영역 및/또는 부위들을 설명하기 위하여 사용되지만, 이들 부재, 부품, 영역, 층들 및/또는 부위들은 이들 용어에 의해 한정되어서는 안됨은 자명하다. 이들 용어는 특정 순서나 상하, 또는 우열의 의미하지 않으며, 하나의 부재, 영역 또는 부위를 다른 부재, 영역 또는 부위와 구별하기 위하여만 사용된다. 따라서, 이하 상술할 제1 부재, 영역 또는 부위는 본 발명의 가르침으로부터 벗어나지 않고서도 제2 부재, 영역 또는 부위를 지칭할 수 있다.
이하, 본 발명의 실시예들은 본 발명의 이상적인 실시예들을 개략적으로 도시하는 도면들을 참조하여 설명한다. 도면들에 있어서, 예를 들면, 제조 기술 및/또는 공차에 따라, 도시된 형상의 변형들이 예상될 수 있다. 따라서, 본 발명의 실시예는 본 명세서에 도시된 영역의 특정 형상에 제한된 것으로 해석되어서는 아니 되며, 예를 들면 제조상 초래되는 형상의 변화를 포함하여야 한다.
도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 일 반응기의 단면을 개략적으로 나타낸다.
기판 처리 장치 내 일 반응기는 상부 몸체(upper body) 및 하부 몸체(lower body)를 포함할 수 있다. 상부 몸체와 하부 몸체는 서로 연결될 수 있다. 구체적으로, 반응기의 상부 몸체 및 하부 몸체는 서로 면접촉(face-contact) 및 면실링(face-sealing) 하면서 내부 공간을 형성할 수 있다. 상기 반응기는 그 내부 공간에 기판 지지 장치, 그리고 상기 기판 지지 장치를 둘러싸고 상기 기판 지지 장치 및 상기 상부 몸체 사이에 배치되는 링을 포함할 수 있다.
각각의 반응기는 ALD(Atomic Layer Deposition) 또는 CVD(Chemical Vapor Deposition) 공정이 진행되는 반응기일 수 있다.
반응기의 상부 몸체(16)는 제1 기체 유입부(1), 기체 공급부(2), 배기부(6, 7) 및 링(8)을 포함할 수 있다. 반응기의 하부 몸체(13)는 제2 기체 유입부(9)를 포함할 수 있다. 상기 상부 몸체(16)와 상기 기판 지지 장치(3)는 반응 공간(5)을 형성할 수 있다. 상기 하부 몸체(13)와 상기 기판 지지 장치(3)는 하부 공간(10)을 형성할 수 있다.
상기 링(8)은 상기 기판 지지 장치(3)를 둘러싸고 상기 기판 지지 장치(3) 및 상기 상부 몸체(16) 사이에 배치될 수 있다. 상기 링(8)은 일반적으로 원형 고리 형상을 가질 수 있지만, 이에 제한되지 않는다. 예를 들어, 상기 기판 지지 장치(3)가 사각형상일 경우 상기 링(8)은 사각 고리 형상을 가질 수 있다. 상기 링(8)은 상기 상부 몸체(16)에 대해 고정될 수 있다.
상기 링(8)과 상기 기판 지지 장치(3) 사이에는 갭(G)이 존재할 수 있다. 상기 반응 공간(5)과 상기 하부 공간(10)은 상기 갭(G)을 통해 연통할 수 있다.
상기 기판 지지 장치(3)는 기판을 지지하는 서셉터 본체와 상기 서셉터 본체에 의해 지지된 기판을 가열하는 히터를 포함할 수 있다. 기판의 탑재/탈착(loading/unloading)을 위해 기판 지지 장치(3)는 기판 지지 장치의 일측으로 제공된 구동 모터(11)와 연결되어 상하 이동 가능하도록 구성될 수 있으며, 반응기의 하부 몸체(13)는 반응기 하부 몸체 지지대(18)를 통해 연결된 구동 모터(19)에 의해 상하 이동 가능하도록 구성될 수 있다.
그러나, 도 8에 도시된 바와 같이, 반응기의 하부 몸체(13), 반응기 하부 몸체 지지대(18) 및 챔버 하부 벽(20)이 일체형인 경우, 기판의 탑재/탈착(loading/unloading)을 위해, 반응기는 구동 모터(19) 대신에, 반응기의 하부 몸체(13) 내에 기판 삽입부(700)를 포함할 수 있다.
다른 실시예에 따르면, 도 23에 도시된 바와 같이, 도 3의 반응기의 상부 몸체(16)와 하부 몸체(13)는 일체형일 수 있다. 이러한 경우 제 2기체 유입부(9)는 챔버 하부 벽(20)의 일 측면에 구성될 수 있다. 이러한 변형 실시예에 따르면 반응기 상부 몸체(16)와 기판 지지 장치(3), 그리고 기체 흐름 제어링(8)만으로 기판 지지 장치(3)의 센터링을 진행할 수 있다.
또 다른 변형 실시예에 따르면, 도 24에 도시된 바와 같이, 도 3의 반응기 하부 몸체(13), 하부 몸체 지지대(18)와 구동모터(19) 없이 반응기 상부 몸체(16)와 기판 지지 장치(3)만으로도 증착 장치와 반응 공간을 구성할 수 있다. 이러한 경우 챔버 내의 반응기들은 하부 공간(10)을 공유할 수 있다. 또한, 제 2 기체 유입부(9)는 챔버 하부 벽(20)의 일 측면에 구성될 수 있다.
신축부(12)는 하부 몸체(13)의 하부면과 구동 모터(11) 사이에 배치될 수 있다. 구체적으로, 신축부(12)는 하부 몸체(13)의 하부면과 챔버 하부 벽(20)을 연결하는 제1 신축부(12a)와 챔버 하부 벽(20)과 구동 모터(11)를 연결하는 제2 신축부(12b)를 포함할 수 있다. 신축부(12)는 하부 몸체(13)의 하부면과 구동 모터(11) 사이에 배치되어 하부 공간(10)을 외부로부터 격리할 수 있다.
제2 신축부(12b)는 기판 지지 장치(3)의 이동에 따라 신축될 수 있다. 예를 들어, 제2 신축부(12b)는 주름을 갖는 구성(예를 들어, 벨로우즈)을 포함할 수 있다. 이 경우 기판 지지 장치(3) 및 구동 모터(11)가 상승하는 경우 제2 신축부(12b)는 수축할 수 있고, 기판 지지 장치(3) 및 구동 모터(11)가 하강하는 경우 제2 신축부(12b)는 확장할 수 있다.
선택적인 실시예에서, 제2 신축부(12b)는 탄성을 갖도록 구성될 수 있다. 예를 들어, 제2 신축부(12b)의 탄성은 기판 지지 장치(3)의 상하 운동에 응답하여 신축하도록 조절될 수 있고, 그에 따라 하부 몸체(13)의 하부면과 구동 모터(11) 사이의 차폐가 유지될 수 있다.
제1 기체 유입부(1)를 통해 유입된 공정 기체는 기체 공급부(2)를 통해 반응 공간(5)과 기판으로 공급될 수 있다. 상기 기체 공급부(2)는 샤워헤드일 수 있으며, 샤워헤드의 베이스는 공정 기체를 분출하도록 (예를 들어, 수직 방향으로) 형성된 복수개의 기체 공급 홀을 포함할 수 있다. 기판 상에 공급된 공정 기체는 기판과의 화학반응 또는 기체 상호간의 화학반응을 한 후, 기판 상에 박막을 증착시키거나 또는 박막을 식각할 수 있다.
플라즈마 공정시에는 고주파(RF) 전원은 일측 전극으로서 기능하는 기체 공급부(2)와 전기적으로 연결될 수 있다. 구체적으로, RF 전원과 연결된 RF 로드(4)가 기체 공급부(2)와 연결될 수 있다. 이 경우, 상부 RF 전력은 RF 발생기, RF 정합기, 그리고 RF 로드(4)를 통해 기체 공급부(2)로 공급되며, 기체 유입부(1)를 통해 반응 공간(5)에 유입된 반응기체가 여기되어(activated) 플라즈마를 발생시킬 수 있다.
반응 공간(5)에서, 기판과의 화학반응 이후 잔존하는 잔류 기체 또는 미반응 기체는 배기 덕트(6) 내의 배기 공간(7)과 배기펌프(미도시)를 통해 외부로 배기될 수 있다. 배기 방법은 상방 배기 또는 하방 배기일 수 있다.
도 4는 기판 지지 장치와 링 사이의 갭에서의 공정 기체와 충진 기체의 흐름을 개략적으로 나타낸다.
도 4를 참조하면, 제1 기체 유입부(1)를 통해 유입된 공정 기체는 기체 공급부(2)를 통해 반응 공간(5)과 기판으로 공급될 수 있다.
또한, 제2 기체 유입부(9)를 통해 하부 공간(10)으로 충진 기체가 유입될 수 있다. 이러한 충진 기체는 기판 지지 장치(3)와 링(8) 사이의 갭(G)에 기체 커튼(gas curtain)을 형성함으로써 반응 공간(5) 내의 기체가 하부 공간(10)으로 유입되는 것을 방지할 수 있다. 예를 들어 상기 충진 기체는 질소 또는 아르곤일 수 있다. 혹은 반응 공간(5)에서 플라즈마가 발생할 때 하부 공간(10)에 기생 플라즈마가 발생하는 것을 방지하기 위해 반응공간(5)에 공급되는 기체보다 방전율이 낮은 기체가 제 2 기체 유입부(9)를 통해 하부 공간(10)으로 공급될 수 있다.
도 4에 도시된 바와 같이, 상부 몸체(16)와 기판 지지 장치(3) 사이에 링(8)이 배치될 수 있다. 예를 들어, 링(8)은 기체 흐름 제어 링(flow control ring; FCR)일 수 있다. 상기 링(8)은 상부 몸체(16)와 기판 지지 장치(3) 사이의 갭의 폭을 조절함으로써, 반응 공간(5)과 하부 공간(10) 간의 압력 균형을 제어할 수 있다.
구체적으로, 상기 링(8)은 상부 몸체(16)와 기판 지지 장치(3) 사이의 갭의 폭을 조절함으로써, 즉 상기 링(8)과 기판 지지 장치(3) 사이의 갭의 폭을 조절함으로써, 상기 갭 주위에서의 충진 기체 및 공정 기체의 폭을 제어할 수 있으며, 이에 따라 충진 기체 및 공정 기체의 압력을 제어할 수 있다. 도 4에 도시된 바와 같이, 기판 지지 장치(3)와 링(8) 사이의 갭(G)의 폭(A, B)이 동일하게 유지됨으로써(즉, A=B), 갭의 전체 구간에 걸쳐 반응 공간(5)과 하부 공간(10) 간의 압력 균형이 이루어질 수 있다.
그러나, 상술한 바와 같이, 고온 공정에서, 챔버 및 반응기 내 각 부분 간의 온도 차이로 인한 열팽창 차이로 인해, 반응기 각 부분의 미스매치(mismatch), 즉 오정렬이 발생한다. 예를 들어, 챔버의 상부 벽(17), 반응기 상부(16), 반응기 하부(13) 및 챔버의 하부 벽(20) 간의 열팽창의 차이로 인해, 반응기 각 부품 간의 오정렬이 발생하게 되고, 이로 인해 기판 지지 장치(3)의 링(8)에 대한 센터링 위치가 틀어지게 될 수 있다. 즉, 갭(G)의 폭(A, B)이 전체 구간에 걸쳐 일정하지 않을 수 있다(A ≠ B). 기판 지지 장치(3)가 링(8)에 대하여 편심되는 몇 가지 예를 도 5에 도시하였다.
이와 같이, 기판 지지 장치(3)와 링(8) 사이의 갭이 일정하지 않게 되면(A ≠ B), 기판 지지 장치의 가장자리 부를 둘러싸는 갭(G) 영역에서의 충진 기체와 반응 기체의 압력 균형이 갭의 위치에 따라 달라질 수 있다.
또한, 고온 공정시, 기판 지지 장치(3)와 링(8)의 온도 차이가 크기 때문에(예를 들어, 기판 지지 장치(3)의 온도는 약 500℃, 링의 온도는 약 200℃), 기판 지지 장치(3)와 링(8)의 정렬에 따라 기판 지지 장치(3)의 온도 분포가 달라질 수 있다. 링(8)이 기판 지지 장치(3)와 가까울수록 기판 지지 장치(3)의 열전도에 영향을 많이 미치기 때문이다. 도 6a에 도시된 시뮬레이션 결과로부터, 기판 지지 장치가 링에 대하여 센터링되었을 때 기판 지지 장치의 온도 분포가 일정한 것을 알 수 있으며, 도 6b에 도시된 시뮬레이션 결과로부터, 기판 지지 장치가 링에 대하여 좌측으로 편심되었을 때 기판 지지 장치의 온도 분포가 일정하지 않은 것을 알 수 있다.
즉, 기판 지지 장치(3)와 링(8) 사이의 갭이 일정하지 않게 되면(A ≠ B), 충진 기체와 반응 기체의 압력 균형이 갭(G)의 위치에 따라 달라질 뿐만 아니라, 기판 지지 장치(3)의 온도 분포가 일정하지 않을 수 있다. 이는 기판 상의 박막의 불균일도, 특히 기판 가장자리 부에서의 박막 불균일도를 야기할 수 있으며, 반도체 소자의 불량률을 증가시킬 것이다.
따라서, 기판 처리 장치의 고온 사용에 따라 기판 지지 장치의 중심이 이동되는 것을 보정하고, 기판 지지 장치(3)와 링(8) 사이의 갭(G)의 폭(A, B)을 일정하게 유지시킬 수 있는 방법이 필요하다.
도 7은 본 발명의 기술적 사상에 의한 실시예들에 따른, 복수 개의 반응기들을 포함하는 기판 처리 장치의 단면을 개략적으로 나타낸다.
도 1 및 도 3의 반응기와 달리, 도 7의 반응기는 기판 지지 장치(3)와 구동 모터(11) 사이에 정렬 장치(14)와 제어기(15)를 더 포함할 수 있다.
상기 정렬 장치(14) 및 제어기(15)는 어셈블리 지지대(21)에 의해 지지될 수 있다.
정렬 장치(14)는 기판 지지 장치(3)를 이동시키도록 구성될 수 있다. 예를 들어, 정렬 장치(14)는 기판 지지 장치(3)의 좌우 위치를 정렬하여 반응기 내에서 기판 지지 장치(3)를 정렬하는 역할을 할 수 있다.
제어기(15)는 상기 정렬 장치(14)와 연결되며, 상기 정렬 장치(14)를 제어하여 상기 기판 지지 장치(3)의 이동을 제어하도록 구성될 수 있다. 도 7에서는 각각의 반응기가 제어기(15)를 개별적으로 구비하는 것으로 도시되어 있지만, 다른 실시예에서, 각각의 반응기는 하나의 제어기를 공유할 수 있다. 즉, 하나의 제어기가 모든 반응기들의 기판 지지 장치들의 이동을 제어할 수도 있다.
정렬 장치(14)와 제어기(15)에 의한 기판 지지 장치(3)의 정렬 방법은 도 9 내지 도 18를 참조하여 이하에서 자세히 설명될 것이다.
또한, 도 1 및 도 4의 기판 처리 장치에서와는 달리, 상부 몸체(16)와 기판 지지 장치(3) 사이에 배치된 링(8)은 상부 몸체(16)에 대해 슬라이딩 또는 플로팅(floating)가능하도록 상기 상부 몸체(16) 상에 안착될 수 있다. 예를 들어, 상기 링(8)에 미는 힘(pushing force)이 가해지는 경우, 상기 링(8)은 그러한 미는 힘에 의해 상기 상부 몸체(16) 상에서 가해지는 힘의 방향으로 이동될 수 있다.
구체적으로, 상부 몸체(16)는 그것의 하부의 안쪽에 상기 반응 공간을 향한 단차부(S)를 포함할 수 있다. 이 경우, 링(8)은 상기 단차부(S)의 안쪽으로 안착될 수 있다. 상기 상부 몸체(16)의 단차부(S)에 상기 링(8)이 안착되면, 단차부(S) 벽과 상기 링(8)의 외벽은 일정 간격 이격될 수 있다. 추가 실시예에서, 상기 단차부(S)는 패드(P)를 더 포함할 수 있으며, 상기 링(8)은 상기 패드(P)에 대해 슬라이딩 가능하도록 상기 패드(P) 상에 안착될 수 있다. 상기 링(8)은 기판 지지 장치(3)의 미는 힘에 의해 상기 단차부(S)내에서 이동 가능하도록 설치될 수 있다. 예를 들어, 후술하는 바와 같이, 상기 링(8)은 기판 지지 장치(3)의 이동에 의해 그 일면이 기판 지지 장치(3)와 접촉될 수 있으며, 기판 지지 장치(3)와 접촉한 상태를 유지하면서 기판 지지 장치(3)의 이동 방향을 따라 이동될 수 있다.
다른 실시예에서, 상기 링(8)은 상기 상부 몸체(16)에 대해 고정될 수 있다.
도 8은 본 발명의 다른 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 7의 기판 처리와는 달리, 반응기의 하부 몸체(13), 반응기 하부 몸체 지지대(18) 및 챔버 하부 벽(20)은 일체형일 수 있다. 이 경우, 반응기의 하부 몸체는 기판의 탑재/탈착(loading/unloading)을 위해 상하로 이동할 수 없다. 따라서, 반응기는, 도 7의 구동 모터(19) 대신에, 반응기의 하부 몸체(13) 내에 기판 삽입부(700)를 포함할 수 있다.
기판의 탑재/탈착(loading/unloading)을 위해 기판 지지 장치(3)는 기판 지지 장치의 일측으로 제공된 구동 모터(11)와 연결되어 상하로 이동할 수 있으며, 기판은 기판 삽입부(700)를 통해 삽입될 수 있을 것이다.
추가 실시예에서, 도 23에 도시된 바와 같이, 반응기의 상부 몸체, 하부 몸체, 챔버 하부 벽은 일체형일 수 있다. 이 경우, 제2 기체 유입부(9)는 하부 몸체 대신에 챔버 하부 벽(20)에 구비될 수 있다.
도 9는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸다.
도 9를 참조하면, 먼저, 기판 지지 장치를 제1 방향으로 제1 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 401).
상기 제1 방향은 지면에 대하여 수평한 방향일 수 있다. 선택적 실시예에서, 상기 제1 방향은 -x 축 방향일 수 있다. 예를 들어, 기판 지지 장치를 상기 링을 향하여 -x 축 방향으로 이동시킬 수 있다.
상기 제1 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2 보다 크거나 같을 수 있다. 상기 제1 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경) 보다 작거나 같을 수 있다.
단계 401에서 상기 기판 지지 장치가 이동하는 동안, 상기 기판 지지 장치는 상기 링과 접촉하거나 접촉하지 않을 수 있다. 전자의 경우, 상기 기판 지지 장치와 상기 링이 접촉한 후에도 상기 기판 지지 장치가 계속 이동한다면, 상기 링은 상기 기판 지지 장치의 미는 힘에 의해 제1 방향으로 이동될 수 있다. 이와 관련하여, 도 13a를 참조하여 후술할 것이다. 후자의 경우, 상기 기판 지지 장치가 상기 링과 접촉하지 않기 때문에, 상기 링에 미는 힘이 작용하지 않고, 이에 따라 상기 링은 이동되지 않을 것이다. 이와 관련하여, 도 16a를 참조하여 후술할 것이다.
그 다음, 기판 지지 장치를 제2 방향으로 제2 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 402).
상기 제2 방향은 상기 제1 방향과 반대 방향일 수 있다. 예를 들어, 상기 제1 방향이 -x 축 방향인 경우, 상기 제2 방향은 x 축 방향일 수 있다.
상기 제2 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2 일 수 있다. 후술되는 바와 같이, 상기 제2 미리 결정된 거리가 이 값을 가짐으로써, 상기 기판 지지 장치가 상기 링에 대하여 센터링될 수 있다.
그 다음, 기판 지지 장치를 제2 방향으로 제1 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 403).
단계 403에서 상기 기판 지지 장치가 이동하는 동안, 상기 기판 지지 장치는 상기 링과 접촉할 수 있다. 상기 기판 지지 장치와 상기 링이 접촉한 후에도 상기 기판 지지 장치가 계속 이동한다면, 상기 링은 상기 기판 지지 장치의 미는 힘에 의해 제2 방향으로 이동될 수 있다. 이와 관련하여, 도 13c 및 도 16c를 참조하여 후술할 것이다.
이후, 상기 기판 지지 장치를 상기 제1 방향으로 상기 제2 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 404).
상기 제2 방향이 상기 제1 방향과 반대 방향인 경우, 단계 401 내지 단계 404가 수행된 후, 상기 기판 지지 장치의 최종 위치는 상기 기판 지지 장치의 초기 위치와 동일하다는 것이 유의되어야 한다. 단계 401 내지 단계 404 동안, 상기 기판 지지 장치는 제1 방향과 -제1 방향으로 각각 제1 미리 결정된 거리만큼 이동되고, 또한 제1 방향과 -제1 방향으로 각각 제2 미리 결정된 거리만큼 이동되었기 때문이다. 그럼에도 불구하고, 단계 401 내지 단계 404를 통해, 제1 방향에서, 기판 지지 장치는 링에 대하여 센터링될 수 있다. 단계 401 및/또는 단계 403 동안 기판 지지 장치에 의해 링의 위치가 변동되었기 때문이다. 즉, 본원 발명은 기판 지지 장치의 위치를 보정하는 대신, 링의 위치를 보정함으로써, 링에 대하여 기판 지지 장치를 센터링한다. 이와 관련하여, 도 12 내지 도 13d를 참조하여 후술한다.
그 다음, 기판 지지 장치를 제3 방향으로 제1 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 405).
상기 제3 방향은 지면에 대하여 수평한 방향일 수 있다. 또한, 상기 제3 방향은 제1 방향 및 제2 방향에 수직할 수 있다. 선택적 실시예에서, 상기 제3 방향은 y 축 방향일 수 있다. 예를 들어, 기판 지지 장치를 상기 링을 향하여 y 축 방향으로 이동시킬 수 있다.
단계 405에서 상기 기판 지지 장치가 이동하는 동안, 상기 기판 지지 장치는 상기 링과 접촉하거나 접촉하지 않을 수 있다. 전자의 경우, 상기 기판 지지 장치와 상기 링이 접촉한 후에도 상기 기판 지지 장치가 계속 이동한다면, 상기 링은 상기 기판 지지 장치의 미는 힘에 의해 제3 방향으로 이동될 수 있다.
이후, 기판 지지 장치를 제4 방향으로 제2 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 406).
상기 제4 방향은 제1 방향 및 제2 방향에 수직할 수 있다. 또한, 상기 제4 방향은 상기 제3 방향과 반대 방향일 수 있다. 예를 들어, 상기 제3 방향이 y 축 방향인 경우, 상기 제4 방향은 -y 축 방향일 수 있다.
그 다음, 기판 지지 장치를 제4 방향으로 제1 미리 결정된 거리만큼 이동시키며(단계 407), 다시 기판 지지 장치를 제3 방향으로 제2 미리 결정된 거리만큼 이동시키는 단계가 수행될 수 있다(단계 408).
단계 407에서 상기 기판 지지 장치가 이동하는 동안, 상기 기판 지지 장치는 상기 링과 접촉하거나 접촉하지 않을 수 있다. 전자의 경우, 상기 기판 지지 장치와 상기 링이 접촉한 후에도 상기 기판 지지 장치가 계속 이동한다면, 상기 링은 상기 기판 지지 장치의 미는 힘에 의해 제4 방향으로 이동될 수 있다.
단계 401 내지 단계 404와 같은 맥락으로, 상기 제4 방향이 상기 제3 방향과 반대 방향인 경우, 단계 405 내지 단계 408이 수행된 후, 상기 기판 지지 장치의 최종 위치는 상기 기판 지지 장치의 초기 위치와 동일하다. 그럼에도 불구하고, 단계 401 내지 단계 404를 통해, 제1 방향에서, 기판 지지 장치는 링에 대하여 센터링될 수 있다. 단계 401 및/또는 단계 403 동안 기판 지지 장치에 의해 링이 제3 방향 또는 제4 방향으로 이동되었기 때문이다.
도 10 은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치의 일부의 확대도이다. 이해의 편이를 위해 기판 처리 장치의 다수의 반응기들 중 하나만을 도시하였으며, 반응기 상부 몸체의 구성을 생략하였다.
도 10은 링(8)에 대해 센터링된 기판 지지 장치(3)를 도시한다.
도 10에 도시된 바와 같이, 링(8)의 내경의 길이는 D이며, 기판 지지 장치(3)의 외경의 길이는 C이다. 링(8)의 내경의 길이(D)와 기판 지지 장치(3)의 외경의 길이(C)는 상수(constant)이다. 링(8)의 내경의 길이(D)와 기판 지지 장치(3)의 외경의 길이(C)는 도 9의 단계 401 전에 상기 제어기(15)에 입력될 수 있다. 제어기(15)는 입력된 링(8)의 내경의 길이(D)와 기판 지지 장치(3)의 외경의 길이(C)를 이용하여 기판 지지 장치(3)의 이동 거리를 계산할 수 있다. 이와 같이, 본 발명은 기판 지지 장치(3)와 링(8) 사이의 간격을 측정하는 별도의 진단 기구를 설치할 필요 없이, 링(8)의 내경의 길이(D)와 외경의 길이(C)만으로도 기판 지지 장치의 센터링 작업을 수행할 수 있다. 이는 이하에서 후술될 것이다.
기판 지지 장치(3)와 링(8)사이의 갭(G)의 폭은 도면의 왼쪽과 오른쪽에서 각각 A와 B이다.
따라서, D = A + B + C의 관계식이 성립된다(이 때, A, B는 변수, C, D는 상수).
본 예에서, 기판 지지 장치(3)가 링(8)에 대하여 센터링되어 있기 때문에, 기판 지지 장치(3)와 링(8) 사이의 갭(G)의 폭(A, B)은 동일하다. 즉, A = B = (D - C) / 2 이다. A와 B의 초기 값 또한 상기 제어기(15)에 입력될 수 있다.
도 9 및 도 13a 내지 도 13d를 참조하여 설명되는 바와 같이, 본 실시예에 따른 방법은 다음과 같은 원리를 이용할 것이다. 본 발명은 기판 지지 장치(3)를 센터링하기 위해, 정렬 장치(14)를 이용하여 기판 지지 장치(3)를 링(8)의 한쪽 면에 접촉시킬 것이다. 예를 들어, 기판 지지 장치(3)를 좌측으로 이동시켜 링(8)의 한쪽 면에 접촉시킬 것이다. 이에 따라, A = 0 이 된다. 기판 지지 장치(3)를 링(8)의 한쪽 면에 접촉시키기 위해, 도 9의 방법에서의 제1 미리 결정된 거리는 (D - C) / 2 이상일 수 있다. 그 다음, D = A + B + C 의 관계식으로부터, B의 값 B = (D - C) (D, C는 상수, 이때A=0)가 도출될 수 있다. 다시 정렬 장치(14)를 이용하여, 기판 지지 장치(3)를 반대방향으로 B/2 = (D - C)/2 만큼 이동시킬 것이다. 이로써, A' = B' = (D - C)/2 이 되어(즉 A=A', B=B'), 기판 지지 장치(3)의 센터링이 완료될 수 있다. 일 실시예에서, 기판 지지 장치(3)의 이동 거리와 관련된 계산은 제어기(15)에 의해 수행될 수 있다. 상술한 바와 같이, 제어기(15)는 링(8)의 내경의 길이(D)와 기판 지지 장치(3)의 외경의 길이(C)만을 이용하여, 기판 지지 장치(3)의 이동거리를 계산할 수 있다.
본 발명의 추가 실시예에 따르면, 도 10및 도 11에 도시된 바와 같이, 상부 몸체(16)는 그것의 하부의 안쪽에 상기 반응 공간을 향한 단차부(S)를 포함할 수 있다. 이 경우, 링(8)은 상기 단차부(S)의 안쪽으로 안착될 수 있다. 추가 실시예에서, 상기 단차부(S)는 패드(P)를 더 포함할 수 있으며, 상기 링(8)은 상기 패드(P) 상에 안착될 수 있다. 상기 링(8)은 상기 패드(P)에 대해 슬라이딩 가능하도록 상기 패드(P) 상에 안착될 수 있다. 본 실시예에서, 패드(P)의 길이는 g이다.
링(8)의 반지름 방향 두께는 f이다. 바람직하게는, 상기 링(8)이 이동될 때 상기 링(8)이 패드(P)에 완전히 안착되도록, 상기 패드(P)의 길이(g)는 링(8)의 반지름 방향 두께(f)보다 길거나 같다.
바람직하게는, 상기 상부 몸체의 내경(I)은 상기 링(8)의 내경(D)과 상기 링의 반지름 방향 두께(f)의 합보다 작다. 이러한 구성으로 인해, 도 11에 도시된 바와 같이 상기 링(8)이 일 측으로 최대로 밀어지더라도, 상기 링(8)은 반대 측 패드(P)에 계속 안착될 수 있다.
상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e이며, 링(8)이 이동됨에 따라 변할 수 있다.
전술한 바와 같이, 본 발명에 따른 방법에서, 상기 제1 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2 보다 크거나 같을 수 있다. 상기 링의 반지름 방향 두께(f)가 상기 패드(P)의 길이(g) 보다 작다면, 상기 기판 지지 장치가 제1 미리 결정된 거리만큼 이동하는 도중에 하부 몸체의 벽과 부딪힐 수 있다. 따라서, 상기 링의 반지름 방향 두께(f)는 상기 기판 지지 장치의 이동 거리인 (상기 링의 내경(D) - 상기 기판 지지 장치의 외경(C))/2 보다 큰 것이 바람직하다. 또는, 변형예에서, 상기 기판 지지 장치가 제1 미리 결정된 거리만큼 이동하는 도중에 하부 몸체(13)의 벽과 부딪히지 않도록, 도 22에 도시된 바와 같이, 링(8)의 두께(h1)와 기판 지지 장치(3)의 두께(h2)가 동일할 수 있다. 즉, 도 10과 비교했을 때 패드(P)의 상부면이 기판 지지장치(3)의 하부면보다 높지 않게 구성함으로써 그러한 기술적 효과를 달성할 수 있다. 이로써, 기판 지지 장치(3)는 제1 미리 결정된 거리만큼 이동하는 동안 하부 몸체(13)의 벽과 부딪히지 않고, 링(8)은 패드(P) 상에서 이동 가능할 수 있을 것이다.
추가 실시예들에 따르면, 도 11에 도시된 바와 같이, 상기 링(8)은 하부에 스토퍼(ST)를 더 포함할 수 있다. 상기 스토퍼(ST)는 상기 링(8)이 상부 몸체의 패드(P) 안쪽으로 과도하게 이동하는 것을 방지하는 역할을 할 수 있다. 상기 스토퍼(ST)는 상기 링(8)의 내측벽과 상기 링(8)의 하면 사이에 배치될 수 있다.
상술한 바와 같이, 기판 처리 장치의 열팽창에 따라 기판 지지 장치의 중심이 이동될 수 있다. 도 12는 센터링 위치가 틀어진 기판 지지 장치의 일례를 도시한다.
기판 지지 장치(3)와 링(8)사이의 갭(G)의 폭은 도면의 왼쪽과 오른쪽에서 각각 A1와 B1이다(이 때, A1과 B1은 0이 아닌 상수이며, A1 ≠ B1).
따라서, D = A1 + B1 + C의 관계식이 성립된다.
본 예에서, 기판 지지 장치(3)는 링(8)에 대하여 센터링되어 있지 않으며, 기판 지지 장치(3)는 도면의 왼쪽으로 치우쳐져 있다(즉, A1 < B1).
도 13a 내지 도 13d는 도 9의 기판 처리 방법을 이용하여 도 12의 기판 지지 장치(3)를 링(8)에 대하여 센터링하는 과정을 도시한다.
설명의 편의를 위해, 이하에서는, 제 1 방향은 -x 축 방향(도면에서 좌측방향), 제2 방향은 x 축 방향(도면에서 우측방향), 제1 미리 결정된 거리는 m(m>(D-C)/2), 제2 미리 결정된 거리는 (상기 링의 내경(D) - 상기 기판 지지 장치의 외경(C))/2 라고 한다.
먼저, 도 9 및 도 13a를 참조하면, 도 9의 단계 401에 따라, 제어기(15) 및 정렬 장치(14)에 의해, 기판 지지 장치(3)를 제1 방향(좌측 방향)으로 제1 미리 결정된 거리(m)만큼 이동시키는 단계가 수행된다.
본 예에서, m > A1 이기 때문에, 단계 401동안, 상기 기판 지지 장치(3)는 A1만큼 이동한 후 상기 링(8)과 접촉되며, 상기 링(8)과 접촉한 상태를 유지하면서 나머지 거리(m - A1)를 더 이동할 수 있다. 이에 따라, 상기 링(8)은 상기 기판 지지 장치(3)와 접촉한 상태를 유지하면서, 상기 기판 지지 장치의 이동 방향(즉, 좌측 방향)을 따라 (m - A1)만큼 이동될 수 있다.
이에 따라, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e - (m - A1)이 된다. 이에 대응하여, 우측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e + (m - A1)이 된다.
또한, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 0이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)가 될 것이다.
그 다음, 도 9 및 도 13b를 참조하면, 도 9의 단계 402에 따라, 상기 기판 지지 장치(3)를 제2 방향(우측 방향)으로 제2 미리 결정된 거리((D-C)/2)만큼 이동시키는 단계가 수행된다.
도 9의 단계 402 에서는 기판 지지 장치(3)가 이동하면서 링(8)을 밀지 않기 때문에, 링(8)의 위치는 변하지 않는다. 따라서, 단계 402가 수행된 후에도, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 여전히 e - (m - A1)이다.
또한, 상기 기판 지지 장치(3)의 이동으로 인해, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)/2이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격 또한 (D-C)/2이다. 즉, 단계 401 및 단계 402에 의해, 기판 지지 장치(3)는 x 축 상에서 링(8)에 대해 센터링되었다.
그러나, 도 15, 도 16a 내지 도 16d를 참조하여 설명되는 바와 같이, 제1 미리 결정된 거리(m)가 -x방향의 기판 지지 장치(3)와 링(8) 사이의 거리(A2) 보다 작지만 +x 방향의 기판 지지 장치(3)와 링(8) 사이의 거리(B2) 보다 큰 경우에는(즉, B2 < m < A2), 단계 401 및 단계 402 만으로는 기판 지지 장치(3)가 링(8)에 대하여 센터링될 수 없다. 즉 -x방향에서의 기본 수식에 의한 센터링 계산이 불가능하고 +x방향에서의 센터링 과정이 추가로 필요하다.
이하에서 설명되는 단계 403 및 단계 404는 이러한 상황을 포함한 모든 상황에서 기판 지지 장치(3)를 센터링하기 위해 수행되는 것이다.
도 9 및 도 13c를 참조하면, 도 9의 단계 403에 따라, 기판 지지 장치(3)를 제2 방향(우측 방향)으로 제1 미리 결정된 거리(m)만큼 이동시키는 단계가 수행된다.
본 예에서, 제1 미리 결정된 거리는 m은 (D-C)/2보다 크다고 가정하였기 때문에, 단계 403동안, 상기 기판 지지 장치(3)는 (D-C)/2만큼 이동한 후 상기 링(8)과 접촉되며, 상기 링(8)과 접촉한 상태를 유지하면서 나머지 거리(m - (D-C)/2)를 더 이동할 수 있다. 이에 따라, 상기 링(8)은 상기 기판 지지 장치(3)와 접촉한 상태를 유지하면서, 상기 기판 지지 장치의 이동 방향(즉, 우측 방향)을 따라 (m - (D-C)/2)만큼 더 이동될 수 있다.
이에 따라, 우측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e - A1 + (D-C)/2이 된다. 이에 대응하여, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e + A1 - (D-C)/2이 된다.
또한, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 0이며, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)가 될 것이다.
그 다음, 도 9 및 도 13d를 참조하면, 도 9의 단계 404에 따라, 상기 기판 지지 장치(3)를 제1 방향(좌측 방향)으로 제2 미리 결정된 거리((D-C)/2)만큼 이동시키는 단계가 수행된다.
도 9의 단계 404에서는 기판 지지 장치(3)가 이동하면서 링(8)을 밀지 않기 때문에, 링(8)의 위치는 변하지 않는다. 따라서, 단계 404가 수행된 후에도, 우측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 여전히 e - A1 + (D-C)/2이다.
또한, 상기 기판 지지 장치(3)의 이동으로 인해, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)/2이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격 또한 (D-C)/2이다. 즉, 단계 403 및 단계 404에 의해, 기판 지지 장치(3)는 x축 상에서 링(8)에 대해 센터링되었다.
전술한 바와 같이, 단계 401 내지 단계 404 가 수행된 후, 상기 기판 지지 장치(3)의 최종 위치(즉, 도 13d에서의 위치)는 상기 기판 지지 장치의 초기 위치(즉, 도 12에서의 위치)와 동일하다. 그럼에도 불구하고, 도 12 및 도 13d를 비교하면, 링(8)에 대하여 좌측으로 치우쳐있던 기판 지지 장치(3)는 도 9의 단계 401 내지 단계 404에 의해 센터링된다는 것을 알 수 있다. 이는 단계 401 및 단계 403 동안 기판 지지 장치(3)에 의해 링(8)의 위치가 변동되었기 때문이다. 실제로, 도 13d의 링(8)은 도 12의 링(8)에 비해 좌측으로 (D-C)/2 - A1만큼 이동함을 볼 수 있다. 이와 유사한 논리로, 링에 대하여 우측으로 치우쳐있던 기판 지지 장치에 대해 상기의 방법이 수행된다면, 기판 지지 장치가 아닌 링이 우측으로 이동함으로써, 링에 대한 기판 지지 장치의 센터링이 이루어질 것이다.
즉, 본원 발명은 기판 지지 장치(3)의 위치를 보정하는 대신, 링(8)의 위치를 보정함으로써, 링(8)에 대하여 기판 지지 장치(3)를 센터링하는 것이다.
도 13a 내지 도 13d는 도 9의 단계 401 내지 단계 404를 수행하여 기판 지지 장치(3)를 x축 상에서 링(8)에 대해 센터링하는 과정을 도시한다. 이와 유사한 방식으로, y축에 대하여 도 9의 단계 405 내지 단계 408을 수행한다면, 기판 지지 장치(3)는 y 축 상에서도 링(8)에 대하여 센터링될 것이다.
도 14는 도 9의 기판 처리 방법에 의해 기판 지지 장치가 링에 대하여 센터링되는 과정을 일 반응기의 상면에서 본 모습이다.
본 실시예에서, 제 1 방향은 -x 축 방향(도면에서 좌측방향), 제2 방향은 x 축 방향(도면에서 우측방향), 제3 방향은 y축 방향(도면에서 상측방향), 제4 방향은 -y 축 방향(도면에서 하측방향)이며, 제2 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2 이다.
도 14 (a) 내지 도 14 (e)는 도 9의 단계 401 내지 단계 404를 수행하여 기판 지지 장치를 링에 대해 x축 상에서 센터링하는 과정을 도시한다. 그 다음, 도 14 (f) 내지 도 14 (i)에 도시된 바와 같이, y축에 대하여 도 9의 단계 405 내지 단계 408을 수행함으로써, 기판 지지 장치는 y 축 상에서도 링에 대하여 센터링될 것이다. 이로써, 기판 지지 장치는 전체적으로 링(8)에 대하여 센터링될수 있다.
구체적으로, 도 14 (a)는 기판 지지 장치가 링의 내경의 중심에서 좌측으로 약 0.5 mm 정도 편심된 상태를 도시한다. 그 다음, 도 9의 단계 401에 따라, 정렬 장치는 기판 지지 장치를 좌측으로 이동시켜서, 링의 일면에 접촉시킨다(도 14(b)). 이 때, 상술된 바와 같이, 제어기(도 10의 15)는 입력된 링의 내경과 기판 지지 장치의 외경을 사용하여 기판 지지 장치의 이동 거리를 계산할 수 있다. 즉, 제어기는 입력된 링의 내경과 기판 지지 장치의 외경을 사용하여, 제1 미리 결정된 거리 및 제2 미리 결정된 거리를 계산할 수 있다.
그 다음, 도 9의 단계 402에 따라, 정렬 장치는 계산된 제2 미리 결정된 거리만큼 기판 지지 장치를 우측으로 이동시킨다(도 14(c)). 이 때, 상술한 바와 같이, 제2 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2이므로, 기판 지지 장치는 x 축 상에서 링에 대해 센터링될 것이다.
그 다음, 도 9의 단계 403에 따라, 정렬 장치는 기판 지지 장치를 제1 미리 결정된 거리만큼 우측으로 이동시켜서, 링의 일면에 접촉시킨다(도 14(d)). 도 9의 단계 404에 따라, 정렬 장치는 계산된 제2 미리 결정된 거리만큼 기판 지지 장치를 좌측으로 이동시킨다(도 14(e)). 기판 지지 장치는 x 축 상에서 링에 대해 센터링될 것이다.
이제, 정렬 장치는 y 축 상에서 기판 지지 장치를 센터링시킬 것이다. 먼저, 도 9의 단계 405에 따라, 정렬 장치는 기판 지지 장치를 제3 방향, 즉 y축 방향으로 제1 미리 결정된 거리만큼 이동시킨다. 바람직한 실시예에서, 제1 미리 결정된 거리는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2 이상이므로, 기판 지지 장치는 링의 일면에 접촉할 것이다(도 14(f)). 그 다음, 도 9의 단계 406에 따라, 정렬 장치는 기판 지지 장치를 제4 방향, 즉 -y축 방향으로 제2 미리 결정된 거리만큼 이동시킨다(도 14(g)). 기판 지지 장치는 y축 상에서 링에 대해 센터링될 것이다. 도 9의 단계 407에 따라, 정렬 장치는 기판 지지 장치를 제4 방향, 즉 -y 축 방향으로 제1 미리 결정된 거리만큼 이동시킨다(도 14(h)). 기판 지지 장치는 링의 일면에 접촉할 것이다. 마지막으로, 도 9의 단계 408에 따라, 정렬 장치는 기판 지지 장치를 제3 방향, 즉 y 축 방향으로 제2 미리 결정된 거리만큼 이동시킨다(도 14(i)). 기판 지지 장치는 y 축 상에서 링에 대해 센터링될 것이다.
이와 같이, 기판 지지 장치의 센터링은 x축 센터링과 y축 센터링으로 이루어질 수 있다. 4 방향(x축 방향, -x 축 방향, y 축 방향, -y 축 방향)에서, 기판 지지 장치와 링 사이의 갭이 일정하도록 기판 지지 장치의 센터링이 이루어진다. 이로써, 기판 지지 장치와 링 사이의 갭의 반지름 방향 길이는 갭의 전체 구간에 걸쳐 일정할 수 있다. 이러한 갭의 일정한 반지름 방향 길이는 갭의 전체 구간에 걸쳐 반응 공간(도 7의 5) 내의 기체와 하부 공간(도 7의 10)으로 유입되는 충진 기체간의 압력을 균일하게 유지할 수 있고, 반응 공간의 기체가 하부 공간으로 유입되는 것을 방지할 수 있다.
도 15은 센터링 위치가 틀어진 기판 지지 장치의 다른 예를 도시한다. 도 15는 도 12와 달리 기판 지지 장치(3)장치가 오른쪽으로 편심되었을 때 기판 지지 장치(3)를 센터링 하는 방법을 나타낸다.
기판 지지 장치(3)와 링(8)사이의 갭(G)의 폭은 도면의 왼쪽과 오른쪽에서 각각 A2와 B2이다(이 때, A2와 B2는 0이 아닌 상수이다).
따라서, D = A2 + B2 + C의 관계식이 성립된다.
기판 지지 장치(3)는 링(8)에 대하여 센터링되어 있지 않으며, 도 12의 예와 달리, 도 15의 기판 지지 장치(3)는 도면의 오른쪽으로 치우쳐져 있다(즉, B2 < A2).
본 예에서는, 제1 미리 결정된 거리가 (상기 링의 내경(D) - 상기 기판 지지 장치의 외경(C))/2 보다 크거나 같지만, A2보다는 작은 경우에 대해서 설명할 것이다.
도 16a 내지 도 16d는 도 9의 기판 처리 방법을 이용하여 도 15의 기판 지지 장치(3)를 링(8)에 대하여 센터링하는 과정을 도시한다.
설명의 편의를 위해, 이하에서는, 제 1 방향은 -x 축 방향(도면에서 좌측방향), 제2 방향은 x 축 방향(도면에서 우측방향), 제1 미리 결정된 거리는 m ((D - C)/2 < m < A2), 제2 미리 결정된 거리는 (D - C)/2 라고 한다.
먼저, 도 9 및 도 16a를 참조하면, 도 9의 단계 401에 따라, 기판 지지 장치(3)를 제1 방향(좌측 방향)으로 제1 미리 결정된 거리(m)만큼 이동시키는 단계가 수행된다.
본 예에서, m < A2 이기 때문에, 단계 401동안, 상기 기판 지지 장치(3)는 A2만큼 좌측으로 이동하여도 링(8)과 접촉하지 않을 것이다. 기판 지지 장치(3)가 이동하면서 링(8)을 밀지 않기 때문에, 링(8)은 이동되지 않을 것이다. 즉, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리(e)는 변하지 않는다.
또한, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (A2 - m)이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (B2 + m)이 될 것이다.
그 다음, 도 9 및 도 16b를 참조하면, 도 9의 단계 402에 따라, 상기 기판 지지 장치(3)를 제2 방향(우측 방향)으로 제2 미리 결정된 거리((D-C)/2)만큼 이동시키는 단계가 수행된다.
우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (B2 + m)으로, 제2 미리 결정된 거리보다 크기 때문에, 도 9의 단계 402 동안에도 기판 지지 장치(3)와 링(8)은 접촉하지 않는다. 이에 따라, 링(8)의 위치는 변하지 않는다. 따라서, 단계 402가 수행된 후에도, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 여전히 e 이다.
또한, 상기 기판 지지 장치(3)의 이동으로 인해, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 A2 - m + (D-C)/2이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 B2 + m - (D - C)/2이다.
즉, 단계 401 및 단계 402에 의해서, 도 15의 기판 지지 장치(3)는 x 축 상에서 링(8)에 대해 센터링되지 않았다.
도 12의 기판 장치는 도 9의 단계 401 및 단계 402만을 수행함으로써 x 축 상에서 링에 대해 센터링될 수 있었지만, 도 15의 기판 지지 장치는 그럴 수 없다는 것을 알 수 있다. 도 12에서는 제1 미리 결정된 거리(m)가 기판 지지 장치(3)와 링(8) 사이의 거리(A1) 보다 크지만, 도 15에서는 제1 미리 결정된 거리(m)가 기판 지지 장치(3)와 링(8) 사이의 거리(A2) 보다 작기 때문이다.
도 15의 경우에서 기판 지지 장치(3)를 링(8)에 대해 센터링할 수 있는 방법은 적어도 4 가지가 있다.
첫 째, B2 < (D - C)/2 < A2 < (D - C) 이므로(∵ D = A2 + B2 + C and B2 < A2), 제1 미리 결정된 거리(m)을 (D-C)로 설정하는 것이다. A2 < m 일 것이므로, 도 9의 단계 401에 의해, 기판 지지 장치(3)는 항상 링(8)에 접촉하게 될 것이며, 도 9의 단계 402에 의해 센터링될 수 있을 것이다.
그러나, 도 16a 내지 도 16d에서와 같이 A2 > m 이라고 설정한 경우에는, 다음과 같이 도 9의 단계 403 및 단계 404를 수행하여 기판 지지 장치를 센터링할 수 있다.
도 9 및 도 16c를 참조하면, 도 9의 단계 403에 따라, 기판 지지 장치(3)를 제2 방향(우측 방향)으로 제1 미리 결정된 거리(m)만큼 이동시키는 단계가 수행된다.
본 예에서, 제1 미리 결정된 거리는 m은 (D-C)/2보다 크다고 가정하였기 때문에, 단계 403동안, 상기 기판 지지 장치(3)는 B2 + m - (D - C)/2만큼 이동한 후 상기 링(8)과 접촉되며, 상기 링(8)과 접촉한 상태를 유지하면서 나머지 거리 m - (B2 + m - (D - C)/2) = (D - C)/2 - B2를 더 이동할 수 있다. 이에 따라, 상기 링(8)은 상기 기판 지지 장치(3)와 접촉한 상태를 유지하면서, 상기 기판 지지 장치의 이동 방향(즉, 우측 방향)을 따라 ((D - C)/2 - B2)만큼 이동될 수 있다.
이에 따라, 우측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e - ((D - C)/2 - B2) 이 된다. 이에 대응하여, 좌측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 e + (D - C)/2 - B2이 된다.
또한, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 0이며, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)가 될 것이다.
그 다음, 도 9 및 도 16d를 참조하면, 도 9의 단계 404에 따라, 상기 기판 지지 장치(3)를 제1 방향(좌측 방향)으로 제2 미리 결정된 거리((D-C)/2)만큼 이동시키는 단계가 수행된다.
도 9의 단계 404에서는 기판 지지 장치(3)가 이동하면서 링(8)을 밀지 않기 때문에, 링(8)의 위치는 변하지 않는다. 따라서, 단계 404가 수행된 후에도, 우측에서, 상기 링(8)의 외벽으로부터 상기 단차부(S)까지의 거리는 여전히 e - (D - C)/2 + B2이다.
또한, 상기 기판 지지 장치(3)의 이동으로 인해, 좌측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격은 (D-C)/2이며, 우측에서, 상기 기판 지지 장치(3)와 링(8) 사이의 갭의 간격 또한 (D-C)/2이다.
즉, 도 15의 기판 지지 장치는 도 9의 단계 401 및 단계 402에 의해 x축 상에서 링(8)에 대해 센터링될 수 없지만, 도 9의 단계 403 및 단계 404에 의해서 센터링될 수 있다.
전술한 바와 같이, 단계 401 내지 단계 404 가 수행된 후, 상기 기판 지지 장치(3)의 최종 위치(즉, 도 16d에서의 위치)는 상기 기판 지지 장치의 초기 위치(즉, 도 15에서의 위치)와 동일하다. 그럼에도 불구하고, 도 15 및 도 16d를 비교하면, 링(8)에 대하여 우측으로 치우쳐있던 기판 지지 장치(3) 역시 도 9의 단계 401 내지 단계 404에 의해 센터링된다는 것을 알 수 있다. 이는 단계 401 및 단계 403 동안 기판 지지 장치(3)에 의해 링(8)의 위치가 변동되었기 때문이다. 실제로, 도 16d의 링(8)은 도 15의 링(8)에 비해 우측으로 (D-C)/2 - B2 만큼 이동함을 볼 수 있다.
즉, 본원 발명은 기판 지지 장치(3)의 위치를 보정하는 대신, 링(8)의 위치를 보정함으로써, 링(8)에 대하여 기판 지지 장치(3)를 센터링하는 것이다.
상술한 바와 같이, 챔버 및 반응기 내의 부품들 간의 열팽창 차이로 인해, 반응기들 내의 부품들 간의 오정렬이 발생할 수 있다. 이에 따라 반응기 내의 기판 지지 장치의 센터링 위치가 틀어질 수 있다. 이를 방지하기 위해, 상술한 기판 처리 방법(예를 들어, 도 9의 방법)은 기판 처리 공정 동안 하나 이상의 반응기들에 대해 주기적으로 수행될 수 있다.
도 17는 주기적으로 기판 지지 장치를 센터링하는 기판 처리 방법의 일례를 개략적으로 나타낸다.
본 실시예에서, 기판 처리방법은 하나의 반응기에서 수행될 수도 있고 2 개 이상의 반응기들에서 수행될 수도 있다. 또한, 본 실시예의 기판 처리방법이 2 개 이상의 반응기들에서 수행되는 경우, 기판 처리방법은 2 개 이상의 반응기들에서 동시에 또는 서로 다른 시각에 수행될 수 있다.
먼저, 단계 1201에서, 하나 이상의 기판들에 대한 하나의 일련의 처리 또는 복수의 일련의 처리가 수행될 수 있다. 기판 처리는 증착, 식각 또는 세정 등을 포함할 수 있다. 그 다음, 단계 1202에 따라, 링에 대하여 기판 지지 장치를 센터링할 수 있다. 일 실시예에서, 단계 1202는 기판 처리 장치의 휴지기(idle period) 단계 동안 수행될 수 있다. 다른 실시예에서, 기판 처리 장치는 단계 1202를 수행하고 이후 휴지기 단계를 가질 수 있다. 이후 동일한 과정이 반복될 수 있다.
상술한 바와 같이, 기판 처리 방법의 적용 대상은 하나의 기판을 처리하는 하나의 반응기에 한정되지 않는다. 일부 예들에서, 기판 처리 방법은 한 번에 복수 매의 기판, 즉 한 묶음의 기판(a batch of substrates)을 처리하는 배치(batch) 반응기(즉, 복수 개의 반응기들)에서 사용될 수 있다.
도 18은 복수 개의 반응기들에서 주기적으로 기판 지지 장치를 센터링하는 기판 처리 방법의 일례를 개략적으로 나타낸다. 예를 들어, 주기는 수시간, 수일, 또는 수년일 수 있다.
먼저, 단계 1301에서, 한 묶음의 기판에 대한 하나의 일련의 처리 또는 복수의 일련의 처리가 수행될 수 있다. 기판 처리는 증착, 식각 또는 세정 등을 포함할 수 있다. 일반적으로, 한 묶음의 기판은 25 매의 기판을 포함하나, 본 발명은 이에 한정되지 않는다. 예를 들어, 한 묶음의 기판은 장치 운영자의 운영계획에 따라 10 매 내지 200매의 기판들, 50 내지 150 매의 기판들 등일 수 있다.
그 다음, 단계 1302에 따라, 링에 대하여 기판 지지 장치를 센터링할 수 있다. 일반적으로, 한 배치의 기판의 공정이 완료되면, 기판 처리 장치는 휴지기 단계에 놓이게 된다. 일 실시예에서, 단계 1302는 이러한 휴지기 단계 동안 수행될 수 있다. 다른 실시예에서, 기판 처리 장치는 한 묶음의 기판에 대한 처리를 수행한 후(단계 1301), 바로 기판 처리 장치의 센터링을 수행하며(단계 1302), 그 다음 휴지기 단계를 가질 수 있다. 휴지기 단계에서는 다음 배치 진행을 위한 반응기 분위기를 형성하는 단계가 진행될 수 있다. 예를 들어, 본 출원인 ASM의 미국 특허 US 9,972,490호에서 기술된 바와 같이 다음 배치의 플라즈마 공정 진행을 위한 플라즈마 안정화 단계가 진행될 수 있다.
단계 1303에서, 다른 한 묶음의 기판에 대한 하나의 일련의 처리 또는 복수의 일련의 처리가 수행될 수 있다. 이후, 단계 1304에서, 링에 대하여 기판 지지 장치를 센터링할 수 있다.
이후 동일한 과정이 반복될 수 있다.
도 19는 2 이상의 반응기를 포함하는 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 장치를 개략적으로 나타낸다.
도 19에서, 기판 처리 장치는 기판 지지 장치(3)의 하단부에 정렬 장치(14) 및 정렬 장치 지지 모듈(16)을 포함할 수 있다. 정렬 장치(14)의 일례는 도 20에 개략적으로 도시되어 있다. 정렬 장치(14)는 X-Y stage를 이용하여 링에 대한 기판 지지 장치의 센터링을 구현할 수 있다. 가령, 앞서 설명한대로 기판 지지 장치를 +X, -X, +Y, -Y방향으로 움직이면서 센터링을 구현할 수 있게 한다. 또한, 정렬 장치(14)는 제어기(도 7의 15)와 연결될 수 있으며, 제어기로부터의 명령에 의해 자동으로 기판 지지 장치를 정렬시킬 수 있다. 변형예에서, 정렬 장치(14)는 수동으로 기판 지지 장치를 정렬시킬 수 있다.
도 19에서, 기판 처리 장치는 정렬 장치(14)의 하부에 정렬 장치 지지 모듈(16)을 더 포함할 수 있다. 정렬 장치 지지 모듈(16)은 도 21에 개략적으로 도시되어 있다. 정렬 장치 지지 모듈(16)은 기판 지지 장치를 상하 방향으로 움직이게 하는 구동 모터(도 7의 11)를 포함할 수 있다.
도 20은 정렬 장치(14)의 일례를 개략적으로 도시한다. 정렬 장치(14)는 기판 지지 장치(도 7의 3)가 삽입될 수 있는 삽입부(HH)를 포함할 수 있다. 정렬 장치(14)는 신축부(도 7의 12)가 장착될 수 있는 신축부 삽입부(BB)를 더 포함할 수 있다. 또한, 정렬 장치(14)는 쿨러(2700)를 더 포함할 수 있다. 상기 쿨러(2700)는, 기판 지지 장치가 정렬 장치(14)에 삽입되었을 때, 가열된 기판 지지 장치로 인해 정렬 장치(14)가 가열되는 것을 방지할 수 있으며, 이에 따라 정렬 장치(14) 내의 X 축 모터(미도시), Y 축 모터(미도시) 등의 요소들이 가열되는 것을 방지할 수 있다.
본 발명에 따른 기판 처리 방법 및 기판 처리 장치에 따르면, 기판 지지 장치와 링 사이의 간격을 조절하여, 막 두께의 균일성을 향상시킬 수 있다. 또한, 기판 처리 장치의 고온 공정으로 인한 부품들 간의 오정렬, 그리고 그에 따른 기판 지지 장치의 편심(de-centering)이 발생할 경우, 기판 지지 장치를 링에 대하여 센터링할 수 있게 한다. 또한, 본 발명은 기판 지지 장치와 링 사이의 간격을 측정하는 별도의 진단 기구(예를 들어, 센서) 없이 정렬 장치(도 7의 14) 및 제어기(도 7의 15)만으로 쉽고 빠르게 센터링 작업을 진행할 수 있다.
본 발명을 명확하게 이해시키기 위해 첨부한 도면의 각 부위의 형상은 예시적인 것으로 이해하여야 한다. 도시된 형상 외의 다양한 형상으로 변형될 수 있음에 주의하여야 할 것이다.
이상에서 설명한 본 발명이 전술한 실시예 및 첨부된 도면에 한정되지 않으며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.
Claims (21)
- 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서,
각각의 반응기는 :
상부 몸체;
기판 지지 장치; 및
상기 기판 지지 장치를 둘러싸고 상기 기판 지지 장치 및 상기 상부 몸체 사이에 배치되는 링을 포함하며,
상기 상부 몸체와 상기 기판 지지 장치는 반응 공간을 형성하며,
상기 기판 지지 장치의 하부 영역은 하부 공간을 형성하며,
상기 링과 상기 기판 지지 장치 사이에는 갭이 존재하며, 상기 기판 지지 장치는 상기 링에 대해 센터링되도록 반경 방향으로 이동 가능하며,
상기 링은 상기 기판 지지 장치가 반경 방향으로 이동함에 따라 그 일면이 상기 기판 지지 장치와 접촉되고 상기 기판 지지 장치와의 접촉을 유지한 상태로 상기 기판 지지 장치의 이동 방향과 동일한 방향으로 이동 가능하도록 설치되는 것을 특징으로 하는 기판 처리 장치. - 청구항 1에 있어서,
상기 상부 몸체는 상기 반응 공간을 향한 단차부를 포함하며,
상기 단차부는 패드를 포함하며,
상기 링은 상기 패드 상에 안착되는 것을 특징으로 하는 기판 처리 장치. - 청구항 2에 있어서,
상기 링은 상기 패드에 대해 슬라이딩 가능하도록 상기 패드 상에 안착되는 것을 특징으로 하는 기판 처리 장치. - 청구항 2에 있어서,
상기 패드의 길이는 상기 링의 반지름 방향 두께보다 길거나 같은 것을 특징으로 하는 기판 처리 장치. - 청구항 2에 있어서,
상기 상부 몸체의 내경은 상기 링의 내경과 상기 링의 반지름 방향 두께의 합보다 작은 것을 특징으로 하는 기판 처리 장치. - 청구항 2에 있어서,
상기 링의 반지름 방향 두께는 (상기 링의 내경 - 상기 기판 지지 장치의 외경)/2보다 큰 것을 특징으로 하는 기판 처리 장치. - 청구항 3에 있어서,
상기 링은 하부에 스토퍼를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 청구항 7에 있어서,
상기 스토퍼는 상기 링의 내측벽과 상기 링의 하면 사이에 배치되는 것을 특징으로 하는 기판 처리 장치. - 청구항 1에 있어서,
각각의 반응기는 :
상기 기판 지지 장치를 이동시키기 위한 정렬 장치; 및
상기 정렬 장치와 연결되고, 그리고 상기 기판 지지 장치의 이동을 제어하기 위한 제어기를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 청구항 9에 있어서,
상기 정렬 장치는 :
상기 기판 지지 장치가 삽입되는 삽입부; 및
쿨러를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 청구항 9에 있어서,
상기 제어기에는 상기 링의 내경 및 상기 기판 지지 장치의 외경에 관한 정보가 입력되어 있으며,
상기 제어기는 상기 링의 내경 및 상기 기판 지지 장치의 외경에 관한 정보를 이용하여 상기 기판 지지 장치의 이동 거리를 계산하는 것을 특징으로 하는 기판 처리 장치. - 청구항 9에 있어서,
상기 정렬 장치는 상기 기판 지지 장치를 상기 링에 대해 센터링하도록 구성되는 것을 특징으로 하는 기판 처리 장치. - 청구항 12에 있어서,
상기 링과 상기 기판 지지 장치 사이에 갭이 존재하며,
상기 반응 공간과 상기 하부 공간은 상기 갭을 통해 연통하는 것을 특징으로 하는 기판 처리 장치. - 청구항 13에 있어서,
각각의 반응기는 :
상기 반응 공간 내에 기체를 유입하는 제1 기체 유입부;
상기 하부 공간 내에 기체를 유입하는 제2 기체 유입부를 더 포함하는 것을 특징으로 하는 기판 처리 장치. - 청구항 14에 있어서,
상기 제2 기체 유입부를 통해 상기 하부 공간으로 유입된 기체는 상기 제1 기체 유입부를 통해 상기 반응 공간으로 유입된 기체가 상기 갭을 통해 상기 하부 공간으로 유입되는 것을 방지하는 것을 특징으로 하는 기판 처리 장치. - 청구항 14에 있어서,
각각의 반응기는 :
상기 상부 몸체와 연결되고 상기 기판 지지 장치의 하부를 둘러싸는 하부 몸체를 더 포함하며,
상기 제2 기체 유입부는 상기 하부 몸체 내에 배치되는 것을 특징으로 하는 기판 처리 장치. - 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서,
각각의 반응기는 :
기판 지지 장치;
상기 기판 지지 장치를 둘러싸는 링; 및
상기 기판 지지 장치를 이동시키기 위한 정렬 장치를 포함하며,
상기 기판 지지 장치는 상기 링에 대해 센터링되도록 상기 정렬 장치에 의해 반경 방향으로 이동 가능하며, 상기 링은 상기 기판 지지 장치가 반경 방향으로 이동함에 따라 그 일면이 상기 기판 지지 장치와 접촉되고 상기 기판 지지 장치의 미는 힘에 의해 상기 반경 방향으로 이동 가능하도록 설치되는 것을 특징으로 하는 기판 처리 장치. - 청구항 17에 있어서,
각각의 반응기는 상부 몸체를 더 포함하며,
상기 링은 상기 상부 몸체 상에 배치되며,
상기 정렬 장치는 상기 기판 지지 장치를 이동시킴으로써 상기 상부 몸체에 대한 상기 링의 위치를 변경시키는 것을 특징으로 하는 기판 처리 장치. - 복수 개의 반응기들을 포함하는 기판 처리 장치에 있어서,
각각의 반응기는 :
기판 지지 장치; 및
상기 기판 지지 장치를 둘러싸는 링을 포함하며,
상기 기판 지지 장치는 상기 링에 대해 센터링되도록 반경 방향으로 이동 가능하며,
상기 링은 상기 기판 지지 장치가 반경 방향으로 이동함에 따라 그 일면이 상기 기판 지지 장치와 접촉되고 상기 기판 지지 장치의 미는 힘에 의해 상기 반경 방향으로 이동 가능하도록 설치되며,
상기 링은 상기 링과 상기 기판 지지 장치 사이의 갭을 조절하여, 상기 기판 처리 장치에서의 기판 처리 공정 동안, 상기 기판 지지 장치의 상부 공간과 상기 기판 지지 장치의 하부 공간 간의 기체 압력 균형 및 균일도를 제어하는 것을 특징으로 하는 기판 처리 장치. - 청구항 19에 있어서,
각각의 반응기는 상부 몸체를 더 포함하며,
상기 상부 몸체는 상기 상부 공간을 향한 단차부를 포함하며,
상기 단차부는 패드를 포함하며,
상기 링은 상기 패드 상에 안착되며,
상기 패드의 길이는 상기 링의 반지름 방향 두께보다 길거나 같고,
상기 상부 몸체의 내경은 상기 링의 내경과 상기 링의 반지름 방향 두께의 합보다 작은 것을 특징으로 하는 기판 처리 장치. - 청구항 20에 있어서,
상기 링은 상기 기판 지지 장치의 미는 힘에 의해 상기 패드에 대해 슬라이딩 가능하도록 설치되는 것을 특징으로 하는 기판 처리 장치.
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