TWI518751B - 成分元素濃度漸變分佈之載子通道及其製作方法 - Google Patents

成分元素濃度漸變分佈之載子通道及其製作方法 Download PDF

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TWI518751B
TWI518751B TW103116982A TW103116982A TWI518751B TW I518751 B TWI518751 B TW I518751B TW 103116982 A TW103116982 A TW 103116982A TW 103116982 A TW103116982 A TW 103116982A TW I518751 B TWI518751 B TW I518751B
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李明昌
曾治國
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國立清華大學
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Description

成分元素濃度漸變分佈之載子通道及其製作方法
本發明為一種載子通道及其製作方法，特別是一種成分元素濃度漸變分佈之載子通道製作方法及成分元素濃度漸變分佈之載子通道。
由於半導體元件製程中，元件主要作動區域所含的載子濃度會大幅影響元件特性的表現。如何精準的控制載子濃度與其所分佈的位置，一直是半導體產業裡備受關注課題。
在目前半導體產業中，高溫擴散(Thermal Diffusion)與離子佈植(Ion implantation)為最主要來控制載子濃度與分佈位置的技術。高溫擴散是利用高溫促使高載子濃度區域的載子往低載子濃度區域移動，以控制元件內載子的濃度與分佈。但是利用高溫擴散來改變載子濃度，需要相當高的溫度及相當長的製程時間，因而大幅地增加製程元件的熱預算及生產成本。此外，高溫擴散中載子的移動距離受到溫度的影響而有所限制，僅適用於表面淺層，高溫擴 散無法改變位於元件深層的載子濃度。
離子佈植製程技術則是利用電場加速載子，將載子射入元件的主要作動區域。可以藉由電場的改變來調整載子射入的速度與載子射入的時間，藉此改變載子分佈的深度與濃度。由於，經由電場加速過後的載子具有相當高的能量，而在載子射入元件的過程中，會打亂元件表面的晶格，導致晶格缺陷的產生。雖可藉由退火製程來修復晶格缺陷，但是額外的增加退火製程步驟則會增加元件的生產成本。
前述習知技術雖然可以控制載子濃度與其所分佈的位置，但是皆需要額外的製程步驟與長時間的高溫處理製程，前述的高溫製程都會增加元件生產成本。因此，本發明人經由實驗及研究提出一種減少元件製作步驟的發明，能令元件主要作動區域能夠具有不同的濃度分佈，且在元件製作時就可以需依照元件功能載子濃度的需求選擇對應的位置，便可以有效節省生產成本。
本發明提供一種成分元素濃度漸變分佈之載子通道及其製作方法，可以依照元件功能載子濃度的需求選擇對應的位置，再以其作為元件主要作動區域。藉此可以減少元件製程步驟及熱預算，進而降低生產成本。
本發明之一態樣是一種成分元素濃度漸變分佈之載子通道製作方法，其包含以下步驟：製備一基材。於基 材上製備具有一第一通孔的一第一隔離層，其中第一通孔貫穿第一隔離層。於基材與第一隔離層上形成一堆疊層，堆疊層填入第一通孔，且堆疊層與基材接觸。於堆疊層上形成一第二隔離層。利用微影蝕刻製程將第二隔離層定義出一轉印形狀，其中具有轉印形狀的第二隔離層作為一蝕刻阻擋層。利用選擇性蝕刻製程及蝕刻阻擋層，將轉印形狀轉換至堆疊層。於基材上形成一第三隔離層，第三隔離層包覆第一隔離層、堆疊層及蝕刻阻擋層。執行一快速熱熔製程(Rapid Melt Growth,RMG)，使堆疊層自與基材接觸的一接觸面結晶形成一載子通道，其中載子通道成分元素濃度呈漸變分佈。移除第三隔離層。移除第二隔離層。
上述之成分元素濃度漸變分佈之載子通道製作方法中，更可以包含移除第三隔離層、移除第二隔離層及移除第一隔離層。所使用的基材為相容於半導體製程的單層材料或多層材料。前述基材可以是單晶矽、多晶矽或非晶矽。前述堆疊層可以是鍺錫合金或是矽鍺錫合金。而前述第一隔離層、第二隔離層或是第三隔離層可以是氧化隔離層。此外，第一隔離層、第二隔離層或是第三隔離層也可以是氮化隔離層。此外，載子通道高度與載子通道寬度的比值大於1。
本發明之另一態樣是一種成分元素濃度漸變分佈之載子通道，其包含一基材及一堆疊層。堆疊層堆疊於基材上，堆疊層具有一接觸面，接觸面與基材接觸，而堆疊層藉由快速熱熔製程自接觸面結晶形成一載子通道，載子 通道之成分元素濃度呈漸變分佈，其中載子通道高度與載子通道寬度之比值大於1。
上述之成分元素濃度漸變分佈之載子通道中，所使用的基材為相容於半導體製程的單層材料或多層材料。前述基材可以是單晶矽、多晶矽或非晶矽材料。前述堆疊層可以是鍺錫合金或矽鍺錫合金。
藉此，前述各態樣皆可製備出成分元素濃度漸變分佈之載子通道，不需要額外的製程步驟來改變載子通道內部的載子濃度。解決習用技術高溫及高電壓製程所帶來的高能量消耗問題，並且降低元件生產成本。
P1~P10‧‧‧步驟
100‧‧‧單晶矽基材
110‧‧‧第一氧化隔離層
111‧‧‧第一通孔
120‧‧‧鍺錫合金堆疊層
121‧‧‧載子通道
130‧‧‧第二氧化隔離層
131‧‧‧蝕刻阻擋層
140‧‧‧第三氧化隔離層
200‧‧‧單晶矽基材
221‧‧‧載子通道
H‧‧‧高度
W‧‧‧寬度
第1圖係繪示本發明一種成分元素濃度漸變分佈之載子通道製作方法之一實施例的步驟流程圖。
第2圖係繪示第1圖實施例之製程側視示意圖。
第3圖係繪示本發明一種成分元素濃度漸變分佈之載子通道之一實施例的立體結構圖。
第4圖係繪示第3圖實施例之錫原子濃度分佈的數據圖。
請參照第1圖，第1圖係繪示本發明一種成分元素濃度漸變分佈之載子通道製作方法之一實施例的步驟流程圖。本發明一種成分元素濃度漸變分佈之載子通道製作方 法步驟包含：
步驟P1，製備一基材，前述基材為相容於半導體製程的單層材料或多層材料，使得本發明製作方法所製成的載子通道可以與其他半導體元件整合在同一晶粒上。基材可以是單晶矽、多晶矽或非晶矽等材料。
步驟P2，於基材上製備具有一第一通孔的一第一隔離層，其中第一通孔貫穿第一隔離層。而第一通孔的外型可依照元件需求設計，此外第一隔離層為半導體製程中常見的氧化隔離層或是氮化隔離層。
步驟P3，於基材與第一隔離層上形成一堆疊層，堆疊層填入第一通孔，且堆疊層與基材接觸。其中可以利用氣相沈積技術、磊晶技術或其他相容於半導體製程的技術形成前述堆疊層。此外，堆疊層材料可以是鍺錫合金。
步驟P4，於堆疊層上形成一第二隔離層。第二隔離層為半導體製程中常見的氧化隔離層或是氮化隔離層。
步驟P5，利用微影蝕刻製程將第二隔離層定義出一轉印形狀，其中具有轉印形狀的第二隔離層作為一蝕刻阻擋層。
步驟P6，利用選擇性蝕刻製程及蝕刻阻擋層，將轉印形狀轉換至堆疊層。藉由前述蝕刻阻擋層的保護，可以將轉印形狀轉換至堆疊層，藉此定義出堆疊層所需要的形狀。
步驟P7，於基材上形成一第三隔離層，第三隔離層包覆第一隔離層、堆疊層及蝕刻阻擋層。第三隔離層為 半導體製程中常見的氧化隔離層或是氮化隔離層。
步驟P8，執行一快速熱熔製程，使堆疊層自與基材接觸的一接觸面結晶形成一載子通道，其中載子通道成分元素濃度呈漸變分佈。此外，由於第三隔離層的包覆，可以確保快速熱熔製程中堆疊層的成份元素不會向外逸散，以及外界雜質進入堆疊層。而堆疊層結晶後所形成的載子通道高度與寬度的比值大於1。
步驟P9，移除第三隔離層，有助於移除第二隔離層。
步驟P10，移除第二隔離層，用以接續利用本發明載子通道為主要作動區域之元件的製作流程。
透過上述各步驟，可以製作出一種成分元素濃度漸變分佈之載子通道。利用成分元素濃度漸變分佈的特性，可以依照各種不同功能元件需求，在載子通道上選擇合適的載子濃度區間。不需要額外的製程來改變載子濃度，可以減少元件生產成本。
請參照第2圖，其係繪示第1圖實施例之製程側視示意圖。實施例詳細的製程說明如以下所述，首先如(a)製備一單晶矽基材100。(b)以氣相沈積技術沈積二氧化矽形成第一氧化隔離層110，並且利用微影及蝕刻製程製備第一通孔111。第一通孔111貫穿第一氧化隔離層110，且第一通孔111外型可依照元件功能需求設計。(c)以磊晶技術形成鍺錫合金堆疊層120，鍺錫合金堆疊層120填入第一通孔111，並且與單晶矽基材100接觸。(d)以氣相沈積技術 沈積二氧化矽形成第二氧化隔離層130。(e)利用微影及蝕刻製程製作蝕刻阻擋層131，蝕刻阻擋層131即是具有轉印形狀的第二氧化隔離層130。而轉印形狀可以依照元件使用需求變化圖案與外型。(f)利用選擇性蝕刻製程製作鍺錫合金堆疊層120，受蝕刻阻擋層131保護的鍺錫合金堆疊層120區域不會遭受蝕刻而獲得保存，因此蝕刻後的鍺錫合金堆疊層120將具有前述的轉印形狀。(g)以氣相沈積技術沈積二氧化矽形成第三氧化隔離層140，第三氧化隔離層140包覆第一氧化隔離層110、鍺錫合金堆疊層120及蝕刻阻擋層131。(h)進行快速熱熔製程，鍺錫合金堆疊層120將從與單晶矽基材100接觸的接觸面結晶形成載子通道121。載子通道121即是鍺錫合金堆疊層120的結晶體。載子通道121內，鍺原子濃度由接觸面向上遞減分佈，錫原子濃度由接觸面向上遞增分佈。此外，由於第三氧化隔離層140的保護，鍺錫合金堆疊層120的鍺錫原子不會向外逸散，而且外界雜質也無法進入鍺錫合金堆疊層120。(i)移除第三氧化隔離層140。(j)移除第二氧化隔離層130，本實施例載子通道121高度H與載子通道121寬度W的比值大於1。
透過上述實施例製程，可以在單晶矽基材100上，利用快速熱熔製程製備出以鍺錫合金為材料的載子通道121，而載子通道121內鍺原子及錫原子的濃度隨著與接觸面的距離長短呈漸變分佈。不需要額外的製程步驟改變載子濃度，即可在載子通道121內部，各種錫原子濃度所對應的位置製作金氧半導體電晶體通道、發光元件或是光偵 測器。此外，快速熱熔製程時間短暫，可以大幅減少製程的熱預算，降低元件的生產成本。
請參照第3圖及第4圖；第3圖繪示本發明一種成分元素濃度漸變分佈之載子通道之一實施例的立體結構圖。第4圖繪示第3圖實施例之錫原子濃度分佈的數據圖。本實施例中包含一單晶矽基材200及一載子通道221。
單晶矽基材200相容於半導體製程，在單晶矽基材200上形成鍺錫合金堆疊層(圖示未編號)，鍺錫合金堆疊層具有接觸面，接觸面與單晶矽基材200接觸。鍺錫合金堆疊層藉由微影蝕刻製程定義成長條狀，隨後前述長條狀的鍺錫合金堆疊層進行快速熱熔製程。藉由快速熱熔製程，長條狀鍺錫合金堆疊層由接觸面開始結晶形成載子通道221。
載子通道221即是長條狀鍺錫合金堆疊層的結晶體，其中載子通道221高度H與載子通道221寬度W的比值大於1。而載子通道221內部的鍺原子濃度由接觸面向上遞減分佈，錫原子濃度由接觸面向上遞增分佈。以第4圖鍺錫合金(錫濃度10%)為例，在距離接觸面高度在25奈米(nm)時，錫原子濃度為0.2%；在距離接觸面高度在100奈米時，錫原子濃度為0.35%；而在距離接觸面高度在190奈米，錫原子濃度提升為6.5%。當載子通道221高度H在200奈米以內時，錫原子濃度的分佈就有超過30倍的差異，故本發明錫原子濃度分佈可說是相當的廣泛。
透過上述詳細說明，本發明實施例可以在同一載子 通道221上，藉由改變距離接觸面高度選擇錫原子濃度，並且藉由改變距離接觸面高度來做為不同功能元件的主要作動區域。此外，更可以改變鍺錫合金原始的成份濃度，調配不同的錫原子濃度分佈，藉以配合各類型元件的不盡相同的製程條件。此外，在單晶矽基材200具有快速散熱的特性，可以快速的逸散元件在高速運作狀態下所產生的熱量，避免大量熱量累積而降低元件運作的效能。
綜合以上所述，本發明成分元素濃度漸變分佈之載子通道具有以下優勢：1.載子通道成分元素濃度為漸變分佈，可以選擇合適的載子濃度區間製作元件，不需要額外的製程步驟來改變載子濃度，可以減少元件製作流程。2.載子通道內成分元素濃度分佈廣泛，可以在相同幾何形狀下製作各類型元件，如金氧半導體電晶體通道、發光元件或是光偵測器。3.快速熱熔製程時間短暫，可以大幅減少元件製程的熱預算，降低元件的生產成本。
在此簡單說明上述之「主要作動區域」是指因為載子間電荷相互的運動而使元件產生特定功能的區域，而前述特定功能可以熱電轉換、光電轉換或是電磁轉換等習知的應用。而上述「對應的位置」是利用與接觸面的距離作為區分的依據，因此「對應的位置」因應不同載子通道的幾何外型設計，可以是載子通道高度或是載子通道寬度。此外，上述『堆疊層』為經過快速熱熔製程後可以再次結晶的材料。
雖然本發明已以實施方式揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
P1~P10‧‧‧步驟

Claims (14)

  1. 一種成分元素濃度漸變分佈之載子通道製作方法，包含以下步驟：製備一基材；於該基材上製備具有一第一通孔的一第一隔離層，其中該第一通孔貫穿該第一隔離層；於該基材與該第一隔離層上形成一堆疊層，該堆疊層填入該第一通孔，且該堆疊層與該基材接觸；於該堆疊層上形成一第二隔離層；利用微影蝕刻製程將該第二隔離層定義出一轉印形狀，其中具有該轉印形狀的該第二隔離層作為一蝕刻阻擋層；利用選擇性蝕刻製程及該蝕刻阻擋層，將該轉印形狀轉換至該堆疊層；於該基材上形成一第三隔離層，該第三隔離層包覆該第一隔離層、該堆疊層及該蝕刻阻擋層；以及執行一快速熱熔製程，使該堆疊層自與該基材接觸的一接觸面結晶形成一載子通道，其中該載子通道成分元素濃度呈漸變分佈。
  2. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，更包含：在該載子通道形成後，移除該第三隔離層。
  3. 如請求項2所述之成分元素濃度漸變分佈之載子通道製作方法，更包含移除該第二隔離層。
  4. 如請求項3所述之成分元素濃度漸變分佈之載子通道製作方法，更包含移除該第一隔離層。
  5. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該基材為相容於半導體製程的單層材料或多層材料。
  6. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該基材為單晶矽、多晶矽或非晶矽材料。
  7. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該堆疊層為鍺錫合金或矽鍺錫合金。
  8. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該第一隔離層、該第二隔離層或該第三隔離層為氧化隔離層。
  9. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該第一隔離層、該第二隔離層或該第三隔離層為氮化隔離層。
  10. 如請求項1所述之成分元素濃度漸變分佈之載子通道製作方法，其中該載子通道高度與寬度之比值大於1。
  11. 一種成分元素濃度漸變分佈之載子通道，包含：一基材；以及一堆疊層，其堆疊於該基材上，該堆疊層具有一接觸面，該接觸面與該基材接觸，而該堆疊層藉由快速熱熔製程自該接觸面結晶形成一載子通道，該載子通道之成分元素濃度呈漸變分佈，其中該載子通道高度與寬度之比值大於1。
  12. 如請求項11所述之成分元素濃度漸變分佈之載子通道，其中該基材為相容於半導體製程的單層材料或多層材料。
  13. 如請求項11所述之成分元素濃度漸變分佈之載子通道，其中該基材為單晶矽、多晶矽或非晶矽材料。
  14. 如請求項11所述之成分元素濃度漸變分佈之載子通道，該堆疊層為鍺錫合金或矽鍺錫合金。
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