KR20210089079A - 채널형 리프트 핀 - Google Patents
채널형 리프트 핀 Download PDFInfo
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
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Abstract
반응기 시스템은, 챔버 측벽에 의해 둘러싸인 반응 챔버, 및 반응 챔버 내에 포함된 반응 공간과 하부 챔버 공간 사이에서 반응 챔버 내에 배치된 서셉터를 포함할 수 있다. 서셉터는 서셉터를 통해 배치된 핀 구멍을 포함할 수 있고, 상기 핀 구멍은 반응 공간 및 하부 챔버 공간과 유체 연통하고 반응 공간이 하부 챔버 공간과 유체 연통하도록 한다. 리프트 핀은 핀 구멍 내에 배치될 수 있다. 리프트 핀은, 리프트 핀이 핀 구멍 내에 배치되는 경우에 반응 공간이 하부 챔버 공간과 유체 연통하도록 핀 몸체에 배치되고 핀 채널 표면에 의해 정의되는 핀 채널을 포함한 핀 몸체를 포함할 수 있다.
Description
본 개시는 일반적으로 반도체 처리 시스템 또는 반응기 시스템, 및 특히 반도체 반응기 시스템, 그리고 그 안에 포함된 구성 요소에 관한 것으로, 이는, 예를 들어 반응기 시스템 및/또는 기판의 바람직하지 않은 위치 상의 재료 증착을 방지한다.
반도체 기판 위에 다양한 재료 층을 증착하기 위해 반응 챔버를 사용할 수 있다. 반도체는 반응 챔버 내부의 서셉터 상에 배치될 수 있다. 기판 및 서셉터는 원하는 기판 온도 설정점으로 가열될 수 있다. 예시적인 기판 처리 공정에서, 하나 이상의 반응물 가스는 가열된 기판 위를 지나갈 수 있어서 기판 표면 상에 재료의 박막을 증착시킨다. 후속하는 증착, 도핑, 리소그라피, 식각 및 기타 공정들 내내, 이들 층은 집적 회로 내에서 만들어진다.
반응 챔버는 일반적으로 단일 챔버 또는 듀얼 챔버로 제조된다. 듀얼 챔버 배열에서, 두 개의 챔버는 하나의 챔버가 두 번째 챔버 위의 수직으로 배향될 수 있고, 이는 예를 들어 서셉터에 의해 분리될 수 있다. 듀얼 챔버를 포함한 반응기 시스템의 작동 중에, 원하지 않는 오염물이 기판의 밑면(즉, 서셉터에 근접한 기판의 표면) 상에 축적되고/축적되거나 코팅될 수 있고/있거나, 재료가 기판 에지 상에 축적될 수 있는데, 그 이유는 기판이 증착 공정 중에 휠 수 있기 때문이다. 따라서, 기판의 밑면 상의 증착 및 기판 에지 상의 원하지 않는 재료 축적을 방지하기 위한 장치 및 방법이 바람직하다.
본 발명의 내용은 선정된 개념을 단순화된 형태로 소개하기 위해 제공된다. 이들 개념은 하기의 본 발명의 예시적 구현예의 상세한 설명에 더 상세하게 기재되어 있다. 본 발명의 내용은 청구된 요지의 주된 특징 또는 필수적인 특징을 구분하려는 의도가 아니며 청구된 요지의 범주를 제한하기 위해 사용하려는 의도 또한 아니다.
일부 구현예에서, 반응기 시스템이 제공된다. 본원에 개시된 반응기 시스템은 기판 상의 원하지 않는 재료 증착 및/또는 증착 패턴을 감소시키거나 방지하기 위해, 서셉터 상에 기판을 안착 및/또는 평탄화시킬 수 있다.
다양한 구현예에서, 반응기 시스템은, 챔버 측벽에 의해 둘러싸인 반응 챔버, 및 반응 챔버 내에 포함된 반응 공간과 하부 챔버 공간 사이에서 반응 챔버 내에 배치된 서셉터를 포함할 수 있다. 서셉터는 서셉터를 통해 배치된 핀 구멍을 포함할 수 있고, 상기 핀 구멍은 반응 공간 및 하부 챔버 공간과 유체 연통하고 반응 공간이 하부 챔버 공간과 유체 연통하도록 한다. 리프트 핀은 핀 구멍 내에 배치될 수 있다. 리프트 핀은, 리프트 핀이 핀 구멍 내에 배치되는 경우에 반응 공간이 하부 챔버 공간과 유체 연통하도록 핀 몸체에 배치되고 핀 채널 표면에 의해 정의되는 핀 채널을 포함한 핀 몸체를 포함할 수 있다. 핀 채널은 핀 몸체의 길이를 따라 배치될 수 있다. 다양한 구현예에서, 핀 채널은 핀 몸체가 걸쳐지는 축에 선형으로 그리고 평행하게 걸쳐질 수 있다.
다양한 구현예에서, 리프트 핀은, 핀 몸체의 핀 외부 표면이 핀 홀을 정의하는 핀 홀 표면에 인접하게 배치되도록, 배치될 수 있다. 다양한 구현예에서, 핀 외부 표면은 단면 형상을 정의할 수 있고, 누락된 부분을 갖는 기하학적 형상을 포함하며, 여기서 핀 채널은 상기 누락된 부분이다. 다양한 구현예에서, 핀 몸체는, 핀 채널을 포함한 절개부를 갖는 원통형 형상을 포함할 수 있으며, 여기서 상기 핀 몸체는, 핀 채널을 포함하는 절개부를 갖는 원형 단면을 추가로 포함하되, 상기 핀 채널은 상기 핀 몸체의 원형 단면에 파이 조각 형상 채널을 포함한다. 다양한 구현예에서, 상기 핀 채널은, 핀 채널 표면이 밀폐된 형상을 형성하도록 상기 핀 몸체 내에 배치될 수 있다. 다양한 구현예에서, 리프트 핀은 핀 몸체의 상부 말단에 핀 헤드를 포함할 수 있으며, 핀 채널은 핀 헤드를 통해 연장될 수 있다. 핀 헤드는 서셉터의 핀 구멍 내에 적어도 부분적으로 배치될 수 있다. 핀 헤드는 서셉터와 적어도 부분적인 밀봉부를 형성할 수 있다. 다양한 구현예에서, 리프트 핀은 핀 몸체의 상부 말단을 포함할 수 있으며, 상기 리프트 핀 및 서셉터는서로에 대해 이동하도록 구성될 수 있어서, 상기 리프트 핀 몸체의 상부 말단이 상기 서셉터의 기판 지지 표면으로부터 돌출할 수 있도록 한다.
다양한 구현예에서, 반응기 시스템은 하부 챔버 공간과 유체 연통하는 진공원을 추가로 포함할 수 있으며, 진공원은 리프트 핀의 핀 채널을 통해 반응 챔버의 반응 공간과 유체 연통할 수 있다. 다양한 구현예에서, 챔버 측벽은 서셉터의 서셉터 외부 측면에 근접하여 배치될 수 있다. 다양한 구현예에서, 반응기 시스템은, 챔버 측벽과 서셉터 외부 측면 사이에 배치된 공간을 추가로 포함할 수 있어서 반응 공간 및 반응 챔버의 하부 챔버 공간이 공간을 통해 유체 연통할 수 있도록 한다. 다양한 구현예에서, 유체 흐름은 챔버 측벽과 서셉터 외부 측면 사이에서 제한될 수 있다.
다양한 구현예에서, 방법은, 상기 반응 챔버의 반응 공간과 상기 반응 챔버의 하부 챔버 공간 사이에서 반응기의 반응 챔버에 압력차이를 생성하는 단계(상기 반응 공간 및 상기 하부 챔버 공간은 상기 반응 챔버 내에 배치된 서셉터에 의해 분리되고, 상기 압력 차이를 형성하는 단계는 반응 공간 압력보다 더 낮은 챔버 공간 압력을 야기하는 단계); 및/또는 상기 압력 차이를 생성하는 단계에 응답하여 상기 서셉터 내에 배치되고 상기 반응 공간과 상기 하부 챔버 공간 사이에 걸쳐 있는 핀 구멍을 통해 상기 하부 챔버 공간으로 유체를 흐르게 하는 단계를 포함한다. 리프트 핀은 핀 구멍 내에 배치될 수 있다. 리프트 핀은 핀 몸체를 포함할 수 있으며, 상기 핀 몸체는 상기 핀 몸체 내에 배치된 핀 채널을 포함할 수 있어서, 상기 리프트 핀이 상기 핀 구멍 내에 배치되는 경우에 상기 반응 공간이 상기 핀 채널을 통해 상기 하부 챔버 공간과 유체 연통하도록 한다.
다양한 구현예에서, 기판은 서셉터의 기판 지지 표면 상에 배치될 수 있으며, 상기 기판 지지 표면은 상기 반응 공간을 대면하고, 상기 핀 구멍은 상기 기판 지지 표면을 통해 배치된다. 상기 방법은, 상기 압력 차이를 생성하는 단계에 응답하여 상기 기판 지지 표면을 향해 상기 기판 상에 흡입력을 생성하고 상기 핀 구멍을 통해 상기 하부 챔버 공간으로 상기 유체를 흐르게 하는 단계; 및/또는 상기 기판 상에 흡입력을 생성하는 단계에 응답하여 상기 기판을 상기 서셉터 지지 표면 상에 평평하게 안착시키는 단계를 추가로 포함할 수 있다. 다양한 구현예에서, 상기 압력 차이를 생성하는 단계는, 상기 하부 챔버 공간에 유체 결합된 진공원에 의해 달성될 수 있다. 다양한 구현예에서, 상기 핀 채널은 상기 핀 몸체 내에 배치될 수 있고 상기 핀 몸체에 의해 완전히 둘러싸일 수 있다. 다양한 구현예에서, 상기 핀 몸체는 누락된 부분을 갖는 단면 형상을 포함할 수 있으며, 상기 핀 채널은 상기 누락된 부분일 수 있다.
본 개시 및 종래 기술에 대해 달성된 장점을 요약하기 위한 목적으로, 본 개시의 특정 목표 및 장점이 본원에 전술되어 있다. 물론, 이러한 모든 목적 및 이점이 본 개시의 임의의 특정 구현예에 따라 반드시 달성되는 것이 아니라는 점을 이해해야 한다. 따라서, 예들 들어 당업자는, 본원에 개시된 구현예는, 본원에 교시 또는 제안될 수 있는 다른 목적들 또는 장점들을 반드시 달성하지 않고서, 본원에 교시되거나 제시된 바와 같은 하나의 장점 또는 여러 장점들을 달성하거나 최적화하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
이들 구현예 모두는 본 개시의 범주 내에 있는 것으로 의도된다. 본 개시는 논의된 임의의 특정 구현예(들)에 제한되지 않으며, 이들 및 다른 구현예는 첨부된 도면을 참조하는 특정 구현예의 다음의 상세한 설명으로부터 당업자에게 쉽게 분명해질 것이다.
본 명세서는 본 개시의 구현예로 간주되는 것을 특별히 지적하고 명백하게 주장하는 청구범위로 결론을 내지만, 본 개시의 구현예의 장점은 첨부한 도면과 관련하여 읽을 때 본 개시의 구현예의 특정 예의 설명으로부터 더욱 쉽게 확인될 수 있다. 도면 전체에 걸쳐 유사한 요소 번호를 갖는 요소는 동일한 것으로 의도된다.
도 1은 다양한 구현예에 따른 예시적인 반응기 시스템의 개략도이다.
도 2a는 다양한 구현예에 따라, 하부 위치에 배치된 서셉터를 갖는 예시적인 반응 챔버의 개략도이다.
도 2b는 다양한 구현예에 따라, 하부 위치에 배치된 서셉터를 갖는 예시적인 반응 챔버의 개략도이다.
도 3은 다양한 구현예에 따라 서셉터에 배치된 채널을 포함하는 리프트 핀의 사시도를 나타낸다.
도 4는 다양한 구현예에 따른 채널형 리프트 핀의 상부 사시도를 나타낸다.
도 5는 다양한 구현예에 따른 채널형 리프트 핀의 하부 사시도를 나타낸다.
도 6은 다양한 구현예에 따른 채널형 리프트 핀의 정면도를 나타낸다.
도 7은 다양한 구현예에 따른 채널형 리프트 핀의 후면도를 나타낸다.
도 8은 다양한 구현예에 따른 채널형 리프트 핀의 우측면도를 나타낸다.
도 9는 다양한 구현예에 따른 채널형 리프트 핀의 좌측면도를 나타낸다.
도 10은 다양한 구현예에 따른 채널형 리프트 핀의 상부도를 나타낸다.
도 11은 다양한 구현예에 따른 채널형 리프트 핀의 하부도를 나타낸다.
도 12는 다양한 구현예에 따라 반응기 시스템 내의 기판을 처리하는 방법을 나타낸다.
도 1은 다양한 구현예에 따른 예시적인 반응기 시스템의 개략도이다.
도 2a는 다양한 구현예에 따라, 하부 위치에 배치된 서셉터를 갖는 예시적인 반응 챔버의 개략도이다.
도 2b는 다양한 구현예에 따라, 하부 위치에 배치된 서셉터를 갖는 예시적인 반응 챔버의 개략도이다.
도 3은 다양한 구현예에 따라 서셉터에 배치된 채널을 포함하는 리프트 핀의 사시도를 나타낸다.
도 4는 다양한 구현예에 따른 채널형 리프트 핀의 상부 사시도를 나타낸다.
도 5는 다양한 구현예에 따른 채널형 리프트 핀의 하부 사시도를 나타낸다.
도 6은 다양한 구현예에 따른 채널형 리프트 핀의 정면도를 나타낸다.
도 7은 다양한 구현예에 따른 채널형 리프트 핀의 후면도를 나타낸다.
도 8은 다양한 구현예에 따른 채널형 리프트 핀의 우측면도를 나타낸다.
도 9는 다양한 구현예에 따른 채널형 리프트 핀의 좌측면도를 나타낸다.
도 10은 다양한 구현예에 따른 채널형 리프트 핀의 상부도를 나타낸다.
도 11은 다양한 구현예에 따른 채널형 리프트 핀의 하부도를 나타낸다.
도 12는 다양한 구현예에 따라 반응기 시스템 내의 기판을 처리하는 방법을 나타낸다.
특정 구현예 및 실시예가 아래에 개시되었지만, 당업자는 본 개시가 구체적으로 개시된 구현예 및/또는 본 개시의 용도 및 이들의 명백한 변형물 및 균등물을 넘어 확장된다는 것을 이해할 것이다. 따라서, 본 개시의 범주는 본원에 설명된 특정 구현예에 의해 제한되지 않도록 의도된다.
본원에 제시된 예시는 임의의 특정한 재료, 장치, 구조, 또는 소자의 실제 뷰를 의도하려 하는 것은 아니며, 단지 본 개시의 구현예를 설명하기 위해 사용되는 표현이다.
본원에서 사용되는 바와 같이, 용어 "기판"은, 사용될 수 있는, 또는 그 위에 소자, 회로, 또는 막이 형성될 수 있는, 임의의 하부 재료 또는 재료들을 지칭할 수 있다.
본원에서 사용되는 바와 같이, 용어 "원자층 증착"(ALD)은 기상 증착 공정을 지칭할 수 있고, 여기서 증착 사이클은, 바람직하게는 복수의 연속 증착 사이클은 공정 챔버에서 수행된다. 일반적으로, 각각의 사이클 중에 전구체는 증착 표면(예, 기판 표면, 또는 이전 ALD 사이클로부터의 물질과 같은 이전에 증착된 하부 표면)에 화학 흡착되고, 추가적인 전구체와 쉽게 반응하지 않는(즉, 자기 제한적 반응) 단층 또는 서브 단층을 형성한다. 그 후 필요한 경우, 증착 표면 상에서 화학 흡착된 전구체를 원하는 재료로 전환시키는 용도로, 반응물(예를 들어, 다른 전구체 또는 반응 가스)이 후속해서 공정 챔버에 유입될 수 있다. 일반적으로, 이러한 반응물은 전구체와 더 반응할 수 있다. 각각의 사이클 중에 공정 챔버로부터 과잉의 전구체를 제거하고/하거나, 화학 흡착된 전구체의 변환 후 공정 챔버로부터 과잉의 반응물 및/또는 반응 부산물을 제거하기 위해 퍼지 단계들이 더 활용될 수도 있다. 추가로, 본원에서 사용되는 바와 같이, 용어 "원자층 증착"은 전구체 조성물(들), 반응 가스, 및 퍼지(예, 불활성 캐리어) 가스의 교번 펄스로 수행되는 경우, "화학 기상 원자층 증착", "원자층 에피택시" (ALE), 분자 빔 에피택시(MBE), 가스 공급원 MBE, 또는 유기금속 MBE, 및 화학적 빔 에피택시와 같은 관련 용어들에 의해 지정된 공정을 포함하는 것을 또한 의미한다.
본원에서 사용되는 바와 같이, 용어 "화학 기상 증착(CVD)"은 원하는 증착을 생성시키기 위해 기판의 표면 상에서 반응 및/또는 분해되는 하나 이상의 휘발성 전구체에 기판이 노출되는 임의의 공정을 지칭할 수 있다.
본원에서 사용되는 바와 같이, 용어 "막" 및 "박막"은 본원에 개시된 방법에 의해 증착된 임의의 연속적인 또는 비연속적인 구조 및 재료를 지칭할 수 있다. 예를 들어, "막" 및 "박막"은 2D 재료, 나노막대, 나노튜브, 또는 나노입자 또는 심지어는 부분 또는 전체 분자층 또는 부분 또는 전체 원자층 또는 원자 및/또는 분자 클러스터를 포함할 수 있다. "막" 및 "박막"은 핀홀을 포함하는 재료 또는 층을 포함할 수 있지만, 여전히 적어도 부분적으로 연속적일 수 있다.
본원에서 사용되는 바와 같이, 용어 "오염물"은 반응 챔버에 배치된 기판의 순도에 영향을 끼칠 수 있는, 반응 챔버 내에 배치된 원하지 않는 임의의 물질을 지칭할 수 있다. "오염물"이라는 용어는, 반응 챔버 내에 배치된 불필요한 증착물, 금속 및 비금속 입자, 불순물 및 폐기물을 지칭할 수 있으나, 이에 제한되지 않는다.
ALD, CVD 및/또는 기타에 사용되는 반응기 시스템은, 기판 표면 상에 재료를 증착 및 에칭하는 것을 포함하는 다양한 응용에 사용될 수 있다. 다양한 구현예에서, 반응기 시스템(50)은 반응 챔버(4), 공정 처리 중에 기판(30)을 유지하기 위한 서셉터(6), 하나 이상의 반응물을 기판(30)의 표면에 분배하기 위한 유체 분배 시스템(8)(예, 샤워헤드), 하나 이상의 반응물 공급원(10, 12), 및/또는 라인(16 내지 20) 및 밸브 또는 제어기(22 내지 26)를 통해 반응 챔버(4)에 유체 결합되는 캐리어 및/또는 퍼지 가스 공급원(14)을 포함할 수 있다. 시스템(50)은 또한 반응 챔버(4)에 유체 결합된 진공원(28)을 포함할 수 있다.
도 2a 및 도 2b에 나타낸 바와 같이, 본 개시의 구현예는 반응기(100) 내의 기판을 처리하기 위해 이용될 수 있는 반응기 시스템 및 방법을 포함할 수 있다. 다양한 구현예에서, 반응기(100)는 기판을 처리하기 위한 반응 챔버(110)를 포함할 수 있다. 다양한 구현예에서, 반응 챔버(110)는 하나 이상의 기판을 처리하도록 구성될 수 있는 반응 공간(112)(즉, 상부 챔버) 및/또는 하부 챔버 공간(114)(즉, 하부 챔버)을 포함할 수 있다. 하부 챔버 공간(114)은, 반응 챔버로부터 기판을 로딩 및 언로딩하고/하거나 하부 챔버 공간(114)과 반응 공간(112) 사이에 압력 차이를 제공하도록 구성될 수 있다.
다양한 구현예에서, 반응 공간(112) 및 하부 챔버 공간(114)은 반응 챔버(110) 내에 배치된 서셉터(130)에 의해 분리될 수 있다. 다양한 구현예에서, 반응 공간(112) 및 하부 챔버 공간(114)은 실질적으로 서로 유체 분리되거나 분리될 수 있다. 예를 들어, 서셉터(130)는, 서셉터(130)의 서셉터 외부 측면(132)에 근접하여 배치된 반응 챔버(110)의 챔버 측벽(111)과 서셉터(130) 사이에 (즉, 적어도 유체 흐름을 제한한) 적어도 부분적인 밀봉부를 생성함으로써, 반응 공간(112) 및 하부 챔버 공간(114)을 유체적으로 분리할 수 있다. 즉, 서셉터(130)와 챔버 측벽(111) 사이의 공간(108)은 서셉터(130)와 챔버 측벽(111) 사이에 유체 이동이 거의 또는 전혀 없도록 최소화되거나 제거될 수 있다.
다양한 구현예에서, 서셉터(130)와 챔버 측벽(111) 사이의 유체 흐름을 방지하거나 감소시키기 위해, 하나 이상의 밀봉 부재(예, 밀봉 부재(129))는, 서셉터(130)로부터(예를 들어, 서셉터 외부 측면(132)으로부터) 및/또는 반응 챔버(110)의 챔버 측벽(111)으로부터 다른 곳으로 연장되어, 서셉터(130)와 챔버(111) 사이에 (즉, 유체 흐름을 제한 또는 방지한) 적어도 부분적인 밀봉부를 생성할 수 있다. 하부 챔버 공간(114)으로부터의 반응 공간(112)의 적어도 부분적인 밀봉부는, 기판(150)의 공정 처리에 이용되는 전구체 가스 및/또는 다른 유체가 반응 챔버(110)의 하부 챔버 공간(114)으로 진입 및/또는 접촉하는 것을 방지하거나 감소시키기 위해 바람직할 수 있다. 예를 들어, 반응 공간에서 기판을 공정 처리하기 위해 활용되는 전구체 가스는, 하부 챔버 공간(114)과 접촉할 수 있는 부식성 증착 전구체를 포함할 수 있으며, 원하지 않는 증착물/오염물/입자를 생성하여 상부 공간(112)으로 재유입될 수 있음으로써, 반응 공간에 배치된 기판에 오염원을 제공한다.
다양한 구현예에서, 비록 서셉터(130)와 반응 챔버(110)의 챔버 측벽(111) 사이에서 연장된 밀봉 부재(129) 및/또는 반응 챔버(110)의 챔버 측벽(111)과 서셉터(130) 사이의 직접 접촉에 의해 형성된 적어도 부분적인 밀봉부가, 공간(108)을 통해 반응 공간(112)과 하부 챔버 공간(114) 사이의 유체 연통을 제한하거나 실질적으로 방지할 수 있지만, 소량의 전구체 가스가 확산에 의해 하부 챔버 공간(114)으로 진입하는 것이 여전히 가능할 수 있고, 이는 반응기 시스템의 반응 챔버의 하부 챔버에서 부식 가능성, 원치 않는 증착 및 오염 물질을 생성할 수 있다.
다양한 구현예에서, 서셉터(130)는 하나 이상의 핀 구멍(137)을 포함할 수 있다. 각각의 핀 구멍(137)은, 서셉터(130)의 상부 표면(예, 기판(150)이 공정 처리를 위해 배치될 수 있는 기판 지지 표면(135))으로부터 서셉터(130)의 바닥 표면(136)까지, 서셉터(130)를 관통해 걸칠 수 있다. 서셉터 상부 표면(예, 기판 지지 표면(135))은 반응 챔버(110)의 반응 공간(112)에 근접한 서셉터(130)의 표면일 수 있다. 서셉터 하부 표면(136)은 반응 챔버(110)의 하부 챔버 공간(114)에 근접한 서셉터(130)의 표면일 수 있다. 핀 구멍(137) 내에 배치된 리프트 핀이 없는 경우, 반응 공간(112)과 하부 챔버 공간(114)은 핀 구멍(137)을 통해 서로 유체 연통할 수 있다. 즉, 핀 구멍(들)(137)은 반응 공간(112) 및 하부 챔버 공간(114)과 유체 연통할 수 있다.
리프트 핀(200)(또는 다른 유사한 객체)은 각각의 핀 구멍(137) 내에 배치될 수 있다. 도 3 내지 도 11을 추가로 참조하면, 리프트 핀(300)(도 2a 및 도 2b에 도시된 리프트 핀(200)의 예)은 리프트 핀 몸체(350)를 포함할 수 있고, 이는 핀 구멍(337) 내에 배치될 때의 핀 구멍(337)(도 2a 및 도 2b에서의 핀 구멍(137)의 예)의 적어도 일부에 걸치도록 구성된다. 핀 몸체(350)는, 핀 구멍(337)의 단면 형상에 상보적인 단면 형상을 (핀 몸체(350)의 길이에 수직으로 취해진 단면에서) 포함할 수 있다. 핀 몸체(350)는 핀 외부 표면(370)에 의해 정의될 수 있다. 핀 외부 표면(370)의 적어도 일부분은, 리프트 핀(300)이 핀 구멍(337) 내에 배치되는 경우, 핀 구멍(337)을 한정하는 핀 구멍 표면(339)에 인접하게 배치된다. 다양한 구현예에서, 핀 외부 표면(370)은 핀 구멍 표면(339)과 적어도 부분적인 밀봉부를 형성할 수 있어 유체(예, 액체 또는 기체)가 핀 외부 표면(370)과 접촉 핀 구멍 표면(339) 사이를 거의 또는 전혀 통과할 수 없도록 한다.
다양한 구현예에서, 리프트 핀(300)은 핀 하부 말단(390)에 대향하는 핀 상부 말단(310)을 포함할 수 있으며, 여기서 핀 몸체(350)(및 핀 길이)는 그 사이에 걸쳐 있다. 리프트 핀(300)의 핀 상부 말단(310)은 핀 헤드(320)를 포함할 수 있다. 핀 헤드(320)는 핀 몸체(350)와 비교하여 임의의 적합한 형상일 수 있다. 다양한 구현예에서, 핀 헤드(320)는, 핀 몸체(350)의 단면 형상에 동일한 단면 형상을 (핀 몸체(350)의 길이에 수직으로 취해진 단면에서) 포함할 수 있다. 다양한 구현예에서, 핀 헤드(320)는, 핀 몸체(350)의 단면 형상보다 더 크거나 더 작은 표면적을 포함한 단면 형상을 (핀 몸체(350)의 길이에 수직으로 취해진 단면에서) 포함할 수 있다.
핀 헤드(320)가 핀 몸체(350)의 단면 형상보다 큰 표면적을 포함하는 구현예에서, 리프트 핀(300)이 배치되는 핀 구멍(337)은, 핀 헤드(320)의 단면 형상에 상보적인 단면 형상을 갖는 핀 헤드 구멍(338)을 포함할 수 있다. 핀 몸체(320)는 핀 외부 표면(322)에 의해 정의될 수 있다. 핀 헤드 외부 표면(322)은, 리프트 핀(300)이 핀 구멍(337) 내에 배치되는 경우, 핀 헤드 구멍(338)을 한정하는 핀 구멍 표면(339)에 인접하게 배치될 수 있다. 다양한 구현예에서, 핀 헤드 외부 표면(322)은 핀 헤드 구멍(338)의 핀 구멍 표면(339)과 적어도 부분적인 밀봉부를 형성할 수 있고(즉, 핀 헤드 구멍의 핀 구멍 표면과 핀 헤드(320) 사이의 유체 흐름을 제한할 수 있고)/있거나, 핀 헤드(320)의 오버행(326)이 핀 구멍 표면(339)의 상보적인 부분과 적어도 부분적인 밀봉부를 형성할 수 있어서, 핀 구멍(337)의 핀 헤드 구멍(338)과 핀 헤드(320) 사이를 유체가 거의 또는 전혀 통과하지 않을 수 있도록 한다.
다양한 구현예에서, 리프트 핀(300)은 핀 상부 말단(310)의 핀 상부 표면(315)을 포함할 수 있다. 핀 상부 표면(315)은 핀 헤드(320)의 일부일 수 있다. 핀 상부 표면(315)은 임의의 적합한 형상을 포함할 수 있다. 예를 들어, 핀 상부 표면(315)은 평평하거나, 오목하거나, 볼록한 표면을 포함할 수 있다. 다양한 구현예에서, 핀 상부 표면(315)은 기판(150)과 접촉하여 서셉터(130)에 대해 기판(150)을 이동시키도록 구성될 수 있다. 예를 들어, 리프트 핀(들)(300)은 기판(150)이 서셉터(130)에 대해 위 또는 아래로 이동시킬 수 있다(즉, 기판(150)과 서셉터(130) 사이의 공간을 증가시키거나 감소시킴).
다양한 구현예에서, 리프트 핀(300)은, 핀 오목부(331)를 핀 헤드(320)와 핀 몸체(350)의 나머지 부분으로부터의 단면적 변화 차이 사이에 포함할 수 있다. 다양한 구현예에서, 이러한 치수 사이에 공간 또는 오목부가 없을 수도 있다.
논의된 바와 같이, 기판(150) 및 서셉터(130)는 서로에 대해 이동 가능할 수 있다. 예를 들어, 다양한 구현예에서, 하나 이상의 리프트 핀(300)(또는 도 2a 및 도 2b에 나타낸 리프트 핀(200))은, 기판(150)을 서셉터(130)로부터 분리시킬 수 있고 기판(150)을 서셉터(130)와 접촉하게(즉, 지지될 수 있도록) 배치시킬 수 있도록 구성될 수 있다. 다양한 구현예에서, 서셉터(130)는, 서셉터(130)가 기판(150)에 대해 이동하도록, 예를 들어 서셉터 엘리베이터(104)를 통해 위 또는 아래로 이동할 수 있다. 다양한 구현예에서, 리프트 핀(200)(또는 도 3 내지 도 11의 300)은, 기판(150)이 서셉터(130)에 대해 이동하도록, 예를 들어 리프트 핀 엘리베이터/플랫폼(202)을 통해 위 또는 아래로 이동할 수 있다. 다양한 구현예에서, 서셉터(130) 및/또는 리프트 핀(200)(또는 도 3 내지 도 11의 300)은, 다른 하나가 이동하는 동안에 고정될 수 있다. 다양한 구현예에서, 서셉터(130) 및/또는 리프트 핀(200)은 다른 것에 대해 이동하도록 구성될 수 있다.
다양한 구현예에서, 반응기 시스템은 각각의 핀 구멍 내에 배치된 해당 리프트 핀(예, 리프트 핀(300))을 갖는 세 개의 핀 구멍(예, 핀 구멍(137)) (또는 임의의 적합한 수의 핀 구멍)을 포함하는 서셉터(예, 서셉터(130))를 포함할 수 있다. 핀 구멍은 기판 지지 표면(135) 위 또는 전체에 걸쳐 임의의 적합한 패턴(예, 기판 지지 표면(135) 상의 주변부에서 등거리로, 기판 지지 표면(135)을 가로지르는 패턴으로)으로 이격될 수 있다. 리프트 핀은 서셉터에 대해(예, 기판 지지 표면에 대해) 위 아래로 동시에 이동하여 기판(예, 기판(150))을 상승 및 하강시킬 수 있다. 기판은, 반응 공간(예, 반응 공간(112)) 내의 처리 위치(즉, 상승 위치)(예, 도 2b에서 나타낸 처리 위치(106))로 상승될 수 있고/있거나 예를 들어 로딩 위치(즉, 하부 위치)(예, 도 2a에 나타낸 로딩 위치(103))로 하강될 수 있다. 다양한 구현예에서, 서셉터가 정지된 상태로 유지되는 동안에 리프트 핀을 이동시킬 수 있거나, 또는 서셉터가 이동하는 동안에 리프트 핀은 정지된 상태로 유지되어, 서셉터에 대해 기판을 상승 및 하강시킬 수 있다. 다양한 구현예에서, 리프트 핀과 서셉터는, 서셉터에 대해 기판을 상승 및 하강시키기 위해 이동할 수 있다.
다양한 구현예에서, 리프트 핀(200)(또는 도 3 내지 도 11의 300)은, 예를 들어 기판(150)과 서셉터(130) 사이의 정적 마찰때문에, 그렇지 않으면 서셉터(130)에 달라붙을 수 있는 기판(150)을 반응 챔버(110)로부터 제거하는 것을 용이하게 할 수 있다. 리프트 핀(200)(또는 도 3 내지 도 11의 300)은, 다른 것에 대해 이동하는 리프트 핀(200) 및/또는 서셉터(130)에 의해 서셉터(130)로부터 기판(150)의 분리를 용이하게 할 수 있다.
다양한 구현예에서, 기판(150)은 공정 처리를 위해 서셉터(130)의 상부(예, 서셉터(130)의 기판 지지 표면(135) 상)에 바로 배치될 수 있다. 다양한 구현예에서, 서셉터(130)의 상부 표면은 기판 지지 표면(135)과 동일한 평면 상에 배치될 수 있다. 다양한 구현예에서, 기판 지지 표면(135)은, 서셉터(130)의 상부 표면에 오목부가 있도록 서셉터(130) 안으로 오목하게 될 수 있다. 기판 지지 표면(135)을 포함한 오목부는, 기판(150) 높이의 적어도 일부가 오목부 내에 배치되도록 하는 높이를 포함할 수 있다. 오목부는, 기판(150)이 기판 지지 표면(135) 상에 그리고 오목부 내에 배치되는 경우에 기판(150)의 상부 표면이 서셉터(130)의 상부 표면과 동일 평면 상에 있도록 하는, 높이를 포함할 수 있다.
다양한 구현예에서, 반응 챔버(110)로부터 기판(150)을 로딩 및/또는 언로딩하기 위해, 기판은 리프트 핀(200)(또는 도 3 내지 도 11의 300) 상에(예, 핀 상부 표면(315) 상에) 배치될 수 있다. 리프트 핀(200)(또는 도 3 내지 도 11의 300) 상에 기판(130)을 배치하는 것은, 예를 들어 챔버 측벽(111) 내의 개구(98)를 통해 반응 챔버(110)로부터 기판(150)의 로딩 또는 언로딩을 용이하게 할 수 있다.
다양한 구현예에서, 일단 기판(150)이 리프트 핀(200) 상에 배치되면, 기판(130)은 로딩 위치(103)로부터 처리 위치(106)로 이동할 수 있고, 이러한 이동 동안에 기판(150)을 수용할 수 있다. 이러한 구현예에서, 리프트 핀(200)의 핀 상부 말단 및/또는 핀 헤드(예, 핀 헤드(320))는 핀 구멍(137)(도 3의 핀 구멍(337))에 의해 수용될 수 있고, 따라서 기판(150)은 서셉터(130)와 바로 접촉할 수 있다. 다양한 구현예에서, 리프트 핀(200)의 핀 헤드는 핀 헤드(320)의 오버행(326)에 상보적인 핀 구멍(337) 및/또는 핀 헤드 구멍(338)의 일부에 의해 지지될 수 있다. 따라서, 리프트 핀(200)은 서셉터(130)와 함께 처리 위치(106)로 이동할 수 있고, 리프트 핀(200)은 핀 구멍(137) 내에 배치되어, 핀 상부 말단(예, 리프트 핀(300)의 핀 상부 말단(310))이 기판 지지 표면(135)과 동일 평면 및/또는 아래에 있도록 한다.
다양한 구현예에서, 일단 기판(150)이 리프트 핀(200) 상에 배치되면, 리프트 핀(200)은 서셉터(130) 내로 하향 이동할 수 있어서, 기판(150)은 서셉터(130)에 의해 (즉, 기판(150)이 기판 지지 표면(135) 상에 놓이도록) 수용된다. 이에 응답하여, 핀 상부 말단(예를 들어, 리프트 핀(300)의 핀 상부 말단(310))은 기판 지지 표면(135)과 동일 평면 및/또는 그 아래에 있을 수 있다. 기판(150)은 후속하여 반응 챔버 내에서 처리될 수 있다.
다양한 구현예에서, 하나 이상의 리프트 핀은 리프트 핀의 길이를 따라 핀 몸체에 배치된 채널(즉, 공극부)을 포함할 수 있다. 핀 채널은, 리프트 핀이 서셉터 내의 각각의 핀 구멍 내에 배치되는 경우에 반응 공간과 반응 챔버의 하부 챔버 공간 둘 모두가 핀 채널과 유체 연통할 수 있도록, 리프트 핀의 길이에 걸쳐 있을 수 있다. 따라서, 핀 채널은, 리프트 핀이 각각의 핀 구멍 내에 배치되는 경우에, 반응 공간과 하부 챔버 공간 사이의 유체 연통을 허용할 수 있다. 다양한 구현예에서, 핀 채널은 핀 몸체가 걸쳐지는 축에 선형으로 그리고 평행하게 걸쳐질 수 있다. 다양한 구현예에서, 핀 채널은, 임의의 적절한 구성(예, 핀 몸체가 걸쳐진 것에 비선형이고 비평행한 경로, 사로형, 나선형, 또는 임의의 다른 원하는 구성)에서 핀 상부 말단과 핀 하부 말단 사이의 범위에 걸쳐 있을 수 있다. 다양한 구현예에서, 핀 채널은, 리프트 핀이 서셉터의 각각의 핀 구멍 내에 배치되고 기판이 서셉터 상에 배치되고 서셉터와 접촉하게 되는 경우에, 반응 공간 및 하부 챔버 공간이 핀 채널을 통해 유체 연통하도록, 핀 상부 말단으로부터 핀 하부 말단을 향해 충분히 멀리 걸쳐 있을 수 있다. 다양한 구현예에서, 핀 채널은 핀 상부 말단(예, 핀 상부 말단(310))으로부터 핀 하부 말단(예, 핀 하부 말단(390))까지 또는 핀 상부 말단과 핀 하부 말단 사이의 어딘가에 걸쳐 있을 수 있다.
리프트 핀이 핀 헤드를 포함하고, 도 3 내지 도 11에 나타낸 바와 같이, 핀 채널(340)은 핀 헤드(320)를 통해 핀 상부 말단(310)으로 연장된다.
핀 채널은 임의의 적절한 구성을 포함할 수 있다. 예를 들어, 리프트 핀(300)은, 핀 채널 표면(342)에 의해 정의된 핀 채널(340)을 포함할 수 있다. 핀 채널이 리프트 핀의 핀 몸체 내에 완전히 둘러싸이지 않는 구현예에서, 예컨대 핀 채널(340)은 핀 몸체(350) 내에 완전히 둘러싸이지 않으며, 핀 채널 표면(예, 핀 채널 표면(342))은 밀폐된 형상을 형성하지 않을 수 있다.
다양한 구현예에서, 핀 외부 표면(370)이 밀폐된 단면 형상을 실제로 형성하는지 여부에 관계없이, 핀 외부 표면(350)은 핀 몸체(350)의 밀폐된 단면 형상을 정의할 수 있다. 예를 들어, 도 3 내지 도 11에 나타낸 바와 같이, 핀 몸체(350)는 원형 단면 형상을 정의하지만, 핀 외부 표면(370)은 핀 채널(340)로 인해 폐쇄된 원형 단면 형상을 실제로 형성하지 않는다. 그러나, 핀 외부 표면(370)을 핀 몸체(350) 내의 공극(즉, 핀 채널(340))으로 외삽하면, 핀 외부 표면(370)에 의해 정의된 핀 몸체(350)의 단면 형상이 원형임을 쉽게 결정할 수 있다. 따라서, 핀 채널이 리프트 핀의 핀 몸체 내에 둘러싸이지 않는 구현예에서, 예컨대 핀 채널(342)이 핀 몸체(350) 내에 완전히 둘러싸이지 않으며, 핀 외부 표면(핀 외부 표면(370))은 핀 몸체의 단면 형상(예, 기하학적 형상)을 정의할 수 있어서, 핀 채널(예, 핀 채널(342))은 누락된 형상의 일부이다. 도 3 내지 도 11에 나타낸 바와 같이, 핀 몸체(350)는 절개부(핀 채널(340))를 갖는 원통형일 수 있고, 절개부(핀 채널(340))를 갖는 (핀 외부 표면(370)의 경로로부터 외삽된) 원형 단면 형상을 포함할 수 있고, 핀 채널(340)은 파이-조각 형상일 수 있다. 핀 몸체는 임의의 적합한 단면 형상을 포함할 수 있고, 핀 채널은 임의의 적합한 단면 형상(예, 직사각형, 정사각형, 삼각형, 원형, 타원형 및/또는 기타)을 포함할 수 있다.
다양한 구현예에서, 핀 채널은 핀 몸체 내에 완전히 둘러싸일 수 있다. 이러한 구현예에서, 채널 외부 표면은 밀폐된 형상을 형성할 것이다. 이러한 구현예에서, 핀 채널은 임의의 단면의 적합한 형상(예, 직사각형, 정사각형, 삼각형, 원형, 타원형 및/또는 기타)을 포함할 수 있다.
다양한 구현예에서, 핀 채널은 핀 몸체의 임의의 적합한 부분을 포함할 수 있다. 예를 들어, 도 3 내지 도 11에 도시된 바와 같이, 핀 채널(340)은 핀 몸체(350)의 1/4(또는 핀 몸체(350)의 단면 형상의 1/4)을 포함할 수 있다. 다양한 구현예에서, 핀 채널은 핀 몸체의 1/3, 1/5, 1/6, 1/8, 1/10, 또는 1/2, 또는 1/6 또는 1/8 또는 1/10 내지 1/2 사이를 포함할 수 있다. 다양한 구현예에서, 핀 몸체는, 리프트 핀이 서셉터 내의 각각의 핀 구멍 내에 배치되는 경우에 반응 공간과 하부 챔버 공간을 유체 연통시킬 수 있는 다수의 핀 채널을 포함할 수 있다. 다양한 구현예에서, 핀 채널은 핀 몸체에 의해 둘러싸인 형상을 포함할 수 있고, 이는 핀 몸체의 단면 형상을 갖는 동심축 단면 형상을 포함한다. 다양한 구현예에서, 핀 채널은, 핀 몸체 내의 임의의 적절한 위치에 배치된 핀 몸체에 의해 둘러싸인 형상을 포함할 수 있다.
리프트 핀(300)은 임의의 적합한 재료, 예를 들어 강철, 알루미늄, 알루미늄 합금, 세라믹 재료(예, 실리콘 카바이드) 및/또는 기타로 구성될 수 있다.
기판 처리 동안(예, 원자층 증착, 화학 기상 증착(CVD) 및/또는 기타 동안)에, 기판은 위로 휠 수 있다(즉, 기판의 외부 에지(들)는 기판의 중간 영역에 대해 서셉터의 기판 지지 표면으로부터 멀리 이동할 수 있다). 이는 기판의 중간에 대해 기판의 에지 상에 재료를 더 많이 증착시킬 수 있는데, 그 이유는 기판의 에지가 유체 분배 시스템(예, 샤워헤드)에 더 가까울 수 있기 때문이다. 그러나, 기판 표면을 가로지르는, 균일한 재료 분포가 바람직할 수 있다. 또한, 기판 휨은, 상승된 기판 에지 아래에서 기판의 밑면 상에 원하지 않는 재료 증착을 야기할 수 있다.
기판 휨에 의해 야기된 하부측 증착과 기판 에지 상에 원하지 않는 재료의 더 큰 축적을 피하기 위해, 본원에서 논의된 시스템 및 방법은 기판 휨에 대항하는 방식으로 기판 처리를 위해 서셉터의 기판 지지 표면 상에 기판을 안착시키는 데 바람직할 수 있다. 즉, 본원의 시스템 및 방법은 기판을 서셉터의 기판 지지 표면 상에 실질적으로 평평하게 안착시킬 수 있어서, 기판 에지가 화학물질 분배 시스템에 더 가깝게 위로 휘어지지 않고 기판 하부측이 반응 공간에 노출되지 않도록 한다(즉, 기판 에지 상을 포함해 기판 하부측이 서셉터의 기판 지지면에 대해 안착된다).
도 12를 추가로 참조하면, 다양한 구현예에 따라 반응 챔버에서 기판을 처리하기 위한 방법(1200)이 나타나 있다. 본 개시의 구현예는 ALD, CVD, 금속유기 화학 기상 증착(MOCVD), 분자 빔 에피탁시(MBE) 및 물리 기상 증착(PVD)을 포함하나 이에 제한되지 않는 다수의 증착 공정을 위해 구성된 반응 챔버에서 활용될 수 있음을 이해해야 한다. 본 개시의 구현예는 반응성 전구체로 기판을 처리하도록 구성된 반응 챔버에서 활용될 수도 있으며, 예를 들어 반응성 이온 에칭(RIE), 유도 결합 플라즈마 에칭(ICP) 및 전자 싸이클로트론 공명 에칭(ECR)과 같은 에칭 공정을 포함할 수도 있다.
다양한 구현예에서, 도 2a 내지 도 11을 참조하면 기판(150)은 반응 챔버(110) 내에 배치될 수 있다(단계(1202)). 다양한 구현예에서, 기판(150)은 서셉터(130)의 기판 지지 표면(135) 상에 바로 배치될 수 있다. 다양한 구현예에서, 기판(150)은 서셉터(130)의 기판 지지 표면(135)으로부터 돌출한 리프트 핀(200)(또는 도 3 내지 도 11의 300) 상에 바로 배치될 수 있다. 이러한 구현예에서, 리프트 핀(200) 및/또는 서셉터(130)는, 기판(150)이 기판 지지 표면(135) 상에 배치되고 이와 접촉하도록, 핀 상부 말단(310)이 서셉터(130)의 기판 지지 표면(135)과 동일 평면에 있거나 기판 지지 표면(135)보다 낮도록(즉, 핀 상부 말단(310)이 서셉터(130) 내에 배치되도록) 이동될 수 있다. 다양한 구현예에서, 리프트 핀(200)은 기판(150)을 수용할 수 있고, 리프트 핀(200)이 정지된 동안에 서셉터(130)가 위로 이동할 수 있어서, 리프트 핀(200)은 서셉터(130) 및 핀 구멍(137) 내로 들어가고, 서셉터(130)는 기판 지지 표면(135) 상에 기판(150)을 수용하고 반응 공간(112)에서 서셉터(130)를 처리 위치(106)로 배치하도록 한다.
다양한 구현예에서, 기판(150)은 공정 처리 중에 휘어질 수 있어서, 기판(150)의 외부 에지(즉, 기판(150)이 서셉터(130) 상에 배치되는 경우에 챔버 측벽(111)에 더 근접한 기판(150)의 부분)는, 기판(150)에 재료를 적용시킬 수 있는 화학물질 분배 시스템(예, 샤워헤드(180))에 더 근접하도록 한다. 이론에 얽매이지 않는다면, 휨은 기판(150) 상의 증착된 층 화합물에 의해 야기될 수 있으며, 이는 기판을 수축시켜서 기판(150)의 측면을 (샤워헤드(180)를 향해) 위로 당긴다. 따라서, 후속 처리(예, 추가적인 화학물질 층(들)의 증착) 전에 및/또는 그 동안 기판(150)을 평탄화하기 위해, 서셉터(130)의 기판 지지 표면(135) 상에 기판(150)을 안착시키는(예, 평탄화하는) 것이 바람직할 수 있다.
다양한 구현예에서, 반응 공간(112)과 하부 챔버 공간(114) 사이에 압력 차이가 생성될 수 있다(단계(1204)). 진공원(예, 도 1에서 진공 펌프(28)의 예일 수 있는 진공원(92) 및/또는 보조 펌프(94))은 하부 챔버 공간(114)과 유체 연통할 수 있다. 진공원은, 하부 챔버 공간(114)으로부터 그리고 반응 챔버(110)로부터 유체 흐름을 야기시키며 그 안의 압력을 감소시킬 수 있다. 진공원이 하부 챔버 공간(114)으로부터 유체 흐름을 야기시키는 동안에, 반응 공간(112) 내의 압력은, 하부 챔버 공간(114) 내의 압력보다 낮은 속도로 감소할 수 있거나 동일하게 유지될 수 있다.
서셉터(130)는 기판 지지 표면(135)으로부터 서셉터 바닥 표면(136)(또는 그 사이의 적어도 일부)으로 기판(130)을 가로지르는 적어도 하나의 핀 구멍(137)을 포함할 수 있으며, 각각은 리프트 핀(200/300)이 그 안에 배치된다. 하나 이상의 리프트 핀은, 핀 몸체(350)의 길이에 걸쳐 있는 적어도 하나의 핀 채널(340)을 포함할 수 있다. 본원에서 논의된 바와 같이, 리프트 핀(300)이 서셉터(130)의 핀 구멍(137) 내에 배치되고 핀 상부 말단(310)이 기판 지지 표면(135)과 동일한 평면에 있거나 그 아래에 있는 경우에, 반응 공간(112) 및 하부 챔버 공간(114)이 핀 구멍(137) 및 핀 채널(340)을 통해 유체 연통할 수 있도록, 핀 채널(340)은 핀 몸체(350)의 임의의 적절한 길이에 걸쳐 있을 수 있다. 예를 들어, 핀 채널(340)은 핀 상부 말단(310)으로부터 핀 하부 말단(390)에 걸쳐 있을 수 있다. 다른 예로서, 핀 채널(340)은 핀 상부 말단(310)으로부터 핀 몸체(350)의 길이 아래로 걸칠 수 있어서, 핀 채널(340)을 포함한 핀 몸체(350)의 길이가, 반응 공간(112)과 하부 챔버 공간(114) 사이의 서셉터(130)(및 반응기(100)의 임의의 다른 구성요소)의 두께보다 크도록 한다. 다른 예로서, 핀 채널(340)은 핀 상부 말단(310)으로부터 핀 몸체(350)의 길이 아래로 걸칠 수 있어서, 리프트 핀(300)이 각각의 핀 구멍(337)에 안착하는 경우에, 핀 채널(340)을 포함한 핀 몸체(350)의 길이가, 반응 공간(112)과 하부 챔버 공간(114) 사이의 서셉터(130)(및 반응기(100)의 임의의 다른 구성요소)에 배치된 핀 몸체(350)의 길이보다 크도록 한다.
반응 공간(112)과 하부 챔버 공간(114)(즉, 하부 챔버 공간(114)보다 높은 압력을 갖는 반응 공간(112)) 사이에 압력 차이를 생성하는 것에 응답하여, 유체는 반응 공간(112)으로부터 하부 챔버 공간(114)으로, 예를 들어 서셉터(130) 내의 핀 구멍을 통해 그리고 핀 구멍에 배치된 리프트 핀 내의 핀 채널(들)을 통해 흐를 수 있다(단계(1206)). 예를 들어, 유체는, 반응 공간(112)으로부터 하부 챔버 공간(114)으로 핀 구멍(137) 및 핀 채널(340)을 통해 흐를 수 있다. 기판(150)은 기판 지지 표면(135) 상에 그리고 핀 구멍(137) 위에 배치될 수 있기 때문에, 반응 공간(112)으로부터 핀 구멍(137) 및 핀 채널(340)을 통해 하부 챔버 공간(114)으로 흐르는 유체는, 핀 구멍(137)의 위치에 근접한 기판(150) 상에 흡입력을 인가할 수 있다. 이러한 흡입력은 기판 지지 표면(135) 및 하부 챔버 공간(114)을 향할 수 있다. 따라서, 기판(150)에 인가된 흡입력은, 서셉터(130)의 기판 지지 표면(135) 상으로 기판(150)을 평탄화하거나 안착시킬 수 있다(단계(1208)). 다양한 구현예에서, 핀 구멍(137)은 기판(150)의 외부 에지(휘기 쉬울 수 있는 이러한 에지)에 근접하게 배치되어서, 서셉터(130)의 기판 지지 표면(135) 상으로 기판(150)의 외부 에지를 납작하게 당길 수 있다. 따라서, 기판(150)의 하부측은, 예를 들어 샤워헤드(180)를 통해 인가되는 재료의 원하지 않는 증착에 더 이상 노출되지 않을 수 있고, 기판(150)의 외부 에지는, 기판(150)의 중간 부분에 비해 샤워헤드(180)의 근접성으로 인한 재료 증착에 더 많이 노출되지 않을 수 있다.
다양한 구현예에서, 핀 구멍(137)을 통한 흡입력은 그 안의(예를 들어, 핀이 핀 구멍(337) 내에 안착하는 경우에 핀 상부 말단(310) 위의 핀 구멍(337)의 일부분을 포함함) 압력 및 기판(150) 아래의 압력을 반응 공간(112)의 압력보다 작게 한다. 따라서, 기판(150)을 기판 지지 표면(135) 상에 안착시키거나 평탄화하는 것은, 기판(150)과 기판 지지 표면(135) 사이에서 적어도 부분적인 밀봉부(137)를 핀 구멍 위로 생성할 수 있어서, 증착 사이클 동안 인가된 재료가 기판(150) 아래로 (즉, 기판(150)과 기판 지지 표면(135) 사이에서) 쉽게 이동하지 않을 수 있고 기판(150)의 하부측과 하부 챔버 공간(114)의 원하지 않는 오염을 제한하거나 방지할 수 있다. 이러한 (부분적인) 밀봉부는 또한 기판 지지 표면(135) 상에서 기판(150)의 이동을 방지한다.
다양한 구현예에서, 기판 지지 표면(135) 상에 기판(150)을 안착시키거나 평탄화하기 위한 방법(1200)의 단계(예, 단계(1204~1208))는 기판 처리 전체에 걸쳐 그리고/또는 임의의 적합한 시간에 그리고 임의의 적합한 방식으로 적용될 수 있다. 예를 들어, 기판 지지 표면(135) 상에 기판(150)을 안착시키는 단계는, 증착 사이클 전, 증착 사이클 동안, 및/또는 증착 사이클 사이에 연속적으로 수행될 수 있다. 다른 예로서, 기판 지지 표면(135) 상에 기판(150)을 안착시키는 단계는 각각의 증착 사이클 이전 및/또는 그 동안 수행될 수 있다(즉, 샤워헤드(180)에 의해 재료를 각각 인가하기 전 및/또는 전체에 걸쳐, 건조/베이킹 동안 증착 사이클 사이의 휴지 기간을 이용해 기판(150) 상에 생성된 층을 형성함).
다양한 구현예에서, 증착 사이클은, 원하는 두께의 층의 원하는 화학물질 시스템이 기판(150) 상에 배치될 때까지, 기판(150) 상에서 수행될 수 있다. 이에 반응하여, 기판(150)은 반응 챔버(110)로부터 제거될 수 있다. 이를 위해, 서셉터(130) 및/또는 리프트 핀(200)은 서로에 대해 이동할 수 있다. 예를 들어, 서셉터(130)는 리프트 핀(200)에 대해 반응 챔버(110) 내에서 아래쪽으로 이동할 수 있고/있거나 리프트 핀(200)은 반응 챔버(110)에서 서셉터(130)에 대해 위쪽으로 이동할 수 있다. 따라서, 기판(150)은 서셉터(130)의 기판 지지 표면(135)으로부터 멀리 리프트 핀(200)에 의해 상승될 수 있으며, 이는 반응 챔버(110)로부터 기판(150)의 제거를 용이하게 할 수 있다.
본 개시의 예시적인 구현예가 본원에 명시되지만, 본 개시는 이에 한정되지 않는다는 것을 이해해야 한다. 예를 들어, 반응기 시스템은 다양한 특정 구조와 관련하여 설명되었지만, 본 개시는 반드시 이들 실시예에 한정되지 않는다. 본원에 기재된 시스템 및 방법의 다양한 변형, 변화 및 개선이 본 개시의 사상 및 범주를 벗어나지 않고 이루어질 수 있다.
본 개시의 요지는 본원에 개시된 다양한 시스템, 구성 요소, 및 구조, 및 다른 특징, 기능, 행위 및/또는 성질의 모든 신규하고 비자명한 조합 및 하위 조합뿐만 아니라 임의의 그리고 모든 이들의 균등물을 포함한다.
Claims (20)
- 반응기 시스템으로서,
챔버 측벽에 의해 둘러싸인 반응 챔버;
상기 반응 챔버 내에 배치된 서셉터(상기 서셉터는 상기 반응 챔버 내에 포함된 하부 챔버 공간과 반응 공간 사이에 배치되고,
상기 서셉터는 상기 서셉터를 통해 배치된 핀 구멍을 포함하여, 상기 핀 구멍이 상기 반응 공간 및 상기 하부 챔버 공간과 유체 연통하도록 하고 상기 반응 공간이 상기 하부 챔버 공간과 유체 연통하도록 함); 및
상기 핀 구멍에 배치된 리프트 핀(상기 리프트 핀은 핀 몸체를 포함하되, 상기 핀 몸체는 상기 핀 몸체 내에 배치되고 핀 채널 표면에 의해 정의된 핀 채널을 포함하여, 상기 리프트 핀이 상기 핀 구멍에 배치되는 경우에 상기 반응 공간이 상기 하부 챔버 공간과 유체 연통하도록 함)을 포함하는, 반응기 시스템. - 제1항에 있어서, 상기 핀 몸체의 핀 외부 표면이 상기 핀 구멍을 정의하는 핀 홀 표면에 인접하게 배치되도록, 상기 리프트 핀을 배치하는, 반응기 시스템.
- 제1항에 있어서, 상기 핀 몸체는, 상기 핀 채널을 포함한 절개부를 갖는 원통형 형상을 포함하되, 상기 핀 몸체는 상기 핀 채널을 포함한 절개부를 갖는 원형 단면을 추가로 포함하고, 상기 핀 채널은 상기 핀 몸체의 원형 단면에 파이 조각 형상 채널을 포함하는, 반응기 시스템.
- 제1항에 있어서, 상기 핀 채널 표면이 밀폐된 형상을 형성하도록 상기 핀 몸체 내에 상기 핀 채널을 배치하는, 반응기 시스템.
- 제1항에 있어서, 상기 하부 챔버 공간과 유체 연통하는 진공원을 추가로 포함하되, 상기 진공원은 상기 리프트 핀의 핀 채널을 통해 상기 반응 챔버의 반응 공간과 유체 연통하는, 반응기 시스템.
- 제1항에 있어서, 상기 리프트 핀은 상기 핀 몸체의 상부 말단에 핀 헤드를 포함하고, 상기 핀 채널은 상기 핀 헤드를 통해 연장되고, 상기 핀 헤드는 상기 서셉터의 핀 구멍 내에 적어도 부분적으로 배치되고, 상기 핀 헤드는 상기 서셉터와 적어도 부분적인 밀봉부를 형성하는, 반응기 시스템.
- 제1항에 있어서, 상기 챔버 측벽은 상기 서셉터의 서셉터 외부 측면 표면에 근접하여 배치되는, 반응기 시스템.
- 제7항에 있어서, 상기 반응 공간 및 상기 반응 챔버의 하부 챔버 공간이 상기 공간을 통해 유체 연통하도록, 상기 챔버 측벽과 상기 서셉터 외부 측면 표면 사이에 배치된 공간을 추가로 포함하는, 반응기 시스템.
- 제7항에 있어서, 상기 챔버 측벽과 상기 서셉터 외부 측면 표면 사이에서 유체 흐름이 제한되는, 반응기 시스템.
- 제1항에 있어서, 상기 리프트 핀은 상기 핀 몸체의 상부 말단을 포함하고, 상기 리프트 핀과 상기 서셉터는 서로에 대해 이동하도록 구성되어 상기 리프트 핀 몸체의 상부 말단이 상기 서셉터의 기판 지지 표면으로부터 돌출될 수 있도록 하는, 반응기 시스템.
- 반응기 시스템에 포함된 서셉터 내에 배치되도록 구성된 리프트 핀으로서,
핀 외부 표면에 의해 정의된 핀 몸체를 포함하되, 상기 핀 몸체는 핀 채널 표면에 의해 정의되고 상기 핀 몸체의 길이를 연장시키는 핀 채널을 포함하는, 리프트 핀. - 제11항에 있어서, 상기 핀 채널 표면이 밀폐된 형상을 형성하도록 상기 핀 몸체 내에 상기 핀 채널을 배치하는, 리프트 핀.
- 제11항에 있어서, 상기 핀 채널은 상기 핀 몸체가 걸쳐지는 축에 선형이고 평행하게 걸치는, 리프트 핀.
- 제11항에 있어서, 상기 핀 외부 표면은 누락된 부분을 갖는 기하학적 형상을 포함한 단면 형상을 정의하되, 상기 핀 채널은 상기 누락된 부분인, 리프트 핀.
- 제11항에 있어서, 상기 핀 몸체의 상부 말단에 핀 헤드를 추가로 포함하고, 상기 핀 채널은 상기 핀 헤드를 통해 연장되는, 리프트 핀.
- 반응기의 반응 챔버 내의 압력 차이를 상기 반응 챔버의 반응 공간과 상기 반응 챔버의 하부 챔버 공간 사이에서 생성하는 단계(상기 반응 공간과 상기 하부 챔버 공간은 상기 반응 챔버 내에 배치된 서셉터에 의해 분리되고,
상기 압력 차이를 형성하는 단계는 반응 공간 압력보다 더 낮은 챔버 공간 압력을 초래함); 및
상기 압력 차이를 생성하는 단계에 반응하여, 상기 서셉터 내에 배치되고 상기 반응 공간과 상기 하부 챔버 공간 사이에 걸쳐있는 핀 구멍을 통해, 유체를 상기 하부 챔버 공간으로 흐르게 하는 단계를 포함하되,
상기 리프트 핀은 상기 핀 구멍에 배치되고, 상기 리프트 핀은 핀 몸체를 포함하되, 상기 핀 몸체는 상기 핀 몸체 내에 배치된 핀 채널을 포함하여, 상기 리프트 핀이 상기 핀 구멍에 배치되는 경우에 상기 반응 공간이 상기 핀 채널을 통해 상기 하부 챔버 공간과 유체 연통하도록 하는, 방법. - 제16항에 있어서, 기판은 상기 서셉터의 기판 지지 표면 상에 배치되고, 상기 기판 지지 표면은 상기 반응 공간과 대면하고, 상기 핀 구멍은 상기 기판 지지 표면을 통해 배치되고, 상기 방법은,
상기 압력 차이를 생성하는 단계에 응답하여 상기 기판 상에 흡입력을 상기 기판 지지 표면을 향해 생성하고, 상기 유체를 상기 반응 공간으로부터 상기 하부 챔버 공간으로 상기 핀 구멍을 통해 흐르게 하는 단계; 및
상기 기판 상에 흡입력을 생성하는 단계에 응답하여 상기 기판을 상기 서셉터 지지 표면 상에 평평하게 안착시키는 단계를 포함하는, 방법. - 제16항에 있어서, 상기 압력 차이를 생성하는 단계는 상기 하부 챔버 공간에 유체 결합된 진공원에 의해 달성되는, 방법.
- 제16항에 있어서, 상기 핀 채널은 상기 핀 몸체 내에 배치되고 이에 의해 완전히 둘러싸이는, 방법.
- 제16항에 있어서, 상기 핀 몸체는 누락된 부분을 갖는 단면 형상을 포함한 단면 형상을 포함하되, 상기 핀 채널이 상기 누락된 부분인, 방법.
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US20210210373A1 (en) | 2021-07-08 |
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