JP2006186271A - 気相成長装置および成膜済基板の製造方法 - Google Patents
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【課題】 気相成長装置において、材料コストが増大したり装置が大型化したりすることなく、効率良く基板上に膜厚と膜質が均一な薄膜形成を行なうことができるようにする。
【解決手段】 気相成長装置は、材料ガスを通過させるための反応管4と、処理対象物である基板5の表面が反応管4の内部に露出するように基板5を保持するための基板保持部6とを備える気相成長装置であって、反応管4の内部空間を基板5の中心を通る平面で切ったときの横断面形状の基板5の表面に鉛直な方向の長さに関しては、反応管4の中央におけるものより反応管4の側方両端におけるものの方が大きくなっている。
【選択図】 図2
【解決手段】 気相成長装置は、材料ガスを通過させるための反応管4と、処理対象物である基板5の表面が反応管4の内部に露出するように基板5を保持するための基板保持部6とを備える気相成長装置であって、反応管4の内部空間を基板5の中心を通る平面で切ったときの横断面形状の基板5の表面に鉛直な方向の長さに関しては、反応管4の中央におけるものより反応管4の側方両端におけるものの方が大きくなっている。
【選択図】 図2
Description
本発明は、気相成長装置および成膜済基板の製造方法に関するものである。
LED(発光ダイオード)、半導体レーザなどに利用される化合物半導体薄膜は、一般に、有機金属化学気相蒸着法(Metal Organic Chemical Vapor Deposition)(「気相成長法」ともいう。)に従って形成される。気相成長法とは、原料として、トリメチルガリウム、トリメチルアルミニウムなどの有機金属ガスと、アンモニア、ホスフィン、アルシンなどの水素含有化合物とを用い、これらの材料ガスを加熱下に基板表面に供給し、基板表面に化合物半導体薄膜を形成する方法である。このような気相成長法において、膜厚および膜質の均一な薄膜を形成するためには、原料を均一に混合すること、基板の温度分布および基板表面の流速分布が均一であることなどが重要とされている。
従来の気相成長装置の一例を図9に示す。この気相成長装置は、反応炉1の内部に反応管104を備え、この反応管104の一端はガス導入口22、他端はガス排気口23となっている。反応管104の途中に処理対象となる基板5を載置する基板保持部6が配置されており、この基板保持部6の下部には基板5を加熱するためのヒータ7が設置されている。図9におけるX−X線に関する矢視断面図を図10に示す。
成膜時には、材料ガスが、ガス導入口22から反応管104内へ導入される。導入された材料ガスは、基板保持部6の下部に設けられたヒータ7により、基板5とともに加熱される。こうして基板5表面近傍における成膜化学反応が促進され、その結果、基板5表面に薄膜が形成される。その後、基板5の近傍を通過した材料ガスは、ガス排気口23から排出される。
反応管104内における材料ガスの流速の流路幅方向の分布を図11に示す。反応管104の側壁(図中上下に示される壁)によって生じる流路抵抗のため、流速は反応管104の流路幅方向中央において最大となり、流路両脇の側壁に近づくにつれて小さくなる傾向がある。その結果、基板5の中央部と外周部とではそれぞれ接している材料ガスの流速に差が生じる。この状態でそのまま成膜を行なうと、成膜後の基板5の膜厚は、反応管104の中心に位置していた部分が厚く積層され、反応管104の両脇に近い部位では次第に薄くなる。
このような基板の面内領域における膜厚のばらつきは半導体特性のばらつきをもたらし、1枚の基板から取得できるデバイスの歩留まりを著しく低下させるため、生産分野における歩留まり確保の観点から大変重要な問題となっていた。
このような装置においては、反応管の流路幅を拡張することにより、基板に関わる領域の材料ガスの流速分布を均一化する方法がとられてきた。また、流速分布を均一にすることを目的とした技術が特開平5―47671号公報(特許文献1)が開示されている。この技術では、気相成長装置において、反応管の内壁に凹凸面を設け、凹凸によって発生する乱流によりいわゆる境界層を薄くする構成となっている。この技術は、境界層を薄くすることによって、内壁近傍での流速が増加し、基板の中央部と周縁部とにおける流速分布を均一化させることができるというものである。
特開平5―47671号公報
しかしながら、上述のように反応管の流路幅を拡張する方法では、基板の面内領域における材料ガスの流速分布をなくすためには、反応管の流路幅を基板の外径に対して十分に広くする必要がある。このような構成では、大量の材料ガスが無駄に消費され、材料コストの増大を招く。また、反応管の幅が広がることによって装置の大型化も必要となる。
また、特許文献1に開示される構成では、反応管の内壁に設けた凹凸により反応管内に乱流を生じさせることで、反応管の中央部と内壁近傍との流速差を緩和する仕組みであるが、内壁に設けた凹凸には気相成長時に副生成物として生成されるパーティクルが溜まりやすく、パーティクルが蓄積されてその後の気相成長時に悪影響を与えるという問題があった。これに対処するため、生産工程で行なう装置のメンテナンスの頻度が必然的に増えてしまい、結果的に生産能力が激減するという問題があった。
本発明は、このような従来技術の問題点に鑑み、材料コストが増大したり装置が大型化したりすることなく、効率良く基板上に膜厚と膜質が均一な薄膜形成を行なうことができる気相成長装置および均一な薄膜を有する成膜済基板の製造方法を提供することを目的とする。
上記目的を達成するため、本発明に基づく気相成長装置の第1の局面は、材料ガスを通過させるための反応管と、処理対象物である基板の表面が上記反応管の内部に露出するように上記基板を保持するための基板保持部とを備える気相成長装置であって、上記反応管の内部空間を上記基板の中心を通る平面で切ったときの横断面形状は、上記反応管の中央における上記基板の表面に鉛直な方向の長さより上記反応管の側方両端における上記基板の表面に鉛直な方向の長さの方が大きくなっている。この構成を採用することにより、反応管の中央の流速は流路抵抗によって抑えられるため、反応管の中央と側壁近傍とで流速の差が小さくなり、均一な成膜を行なうことができるようになる。
上記目的を達成するため、本発明に基づく気相成長装置の第2の局面は、材料ガスを通過させるための反応管と、処理対象物である基板の表面が上記反応管の内部に露出するように上記基板を保持するための基板保持部とを備える気相成長装置であって、上記反応管の内部空間を上記基板の中心を通る平面で切ったときの横断面形状は、上記基板の中央における上記基板の表面に鉛直な方向の長さより上記基板の両端における上記基板の表面に鉛直な方向の長さの方が大きくなっている。この構成を採用することにより、基板の中央の流速は流路抵抗によって抑えられるため、基板の中央と両端近傍とで流速の差が小さくなり、均一な成膜を行なうことができるようになる。
上記発明において好ましくは、上記反応管のうち上記基板と対向する内壁が上記反応管の内部に向かって凸形状となっている。この構成を採用することにより、反応管の内部空間のうち凸形状によって狭くなる部分では流路抵抗によって材料ガスの流速が抑えられるため、均一な成膜を行なうことができるようになる。
上記発明において好ましくは、上記基板保持部は上記基板を自転させながら保持することができるように構成されている。この構成を採用することにより、基板の各部位がより均一な条件で材料ガスにさらされるようになるので、得られる膜の厚みを均一にすることができるようになる。
上記目的を達成するため、本発明に基づく成膜済基板の製造方法は、上述のいずれかの気相成長装置を用いて上記基板の表面に成膜する工程を含む。この方法を採用することにより、膜厚が均一な成膜済基板を得ることができる。
本発明によれば、反応室の幅方向での材料ガスの流速分布のばらつきを小さくすることができるので、得られる膜厚をより均一にすることができる。
(実施の形態1)
(構成)
図1、図2を参照して、本発明に基づく実施の形態1における気相成長装置について説明する。この気相成長装置は、図1に示すように、材料ガスを通過させるための反応管4と、処理対象物である基板5の表面が反応管4の内部に露出するように基板5を保持するための基板保持部6とを備える気相成長装置である。基板保持部6の下方には基板5を加熱するためのヒータ7が配置されている。反応炉1はガス導入口22およびガス排気口23を有しており、反応管4はガス導入口22およびガス排気口23を結んで反応炉1の内部を貫通するように設置されている。基板保持部6およびヒータ7も反応炉1の内部に配置されている。
(構成)
図1、図2を参照して、本発明に基づく実施の形態1における気相成長装置について説明する。この気相成長装置は、図1に示すように、材料ガスを通過させるための反応管4と、処理対象物である基板5の表面が反応管4の内部に露出するように基板5を保持するための基板保持部6とを備える気相成長装置である。基板保持部6の下方には基板5を加熱するためのヒータ7が配置されている。反応炉1はガス導入口22およびガス排気口23を有しており、反応管4はガス導入口22およびガス排気口23を結んで反応炉1の内部を貫通するように設置されている。基板保持部6およびヒータ7も反応炉1の内部に配置されている。
図1のII−II線に関する矢視断面図を図2に示す。この気相成長装置では、反応管4の内部空間を基板5の中心を通る平面で切ったときの横断面形状、すなわち、図2に示す反応管4の断面形状では、反応管4の中央における基板5の表面に鉛直な方向の長さ(以下、この長さを「高さ」という。)より反応管4の側方両端における高さの方が大きくなっている。言い換えれば、反応管4のうち基板5と対向する内壁が反応管4の内部に向かって凸形状となっている。この場合、反応管4のうち基板5と対向する内壁は天井であるが、全体の配置を異なる向き、たとえば天地逆や、一定角度だけ回転させた向きにした場合であっても、基板5と対向する内壁が反応管4の内部に向かって凸形状となっていればよい。
(作用・効果)
この気相成長装置において成膜を行なう際には、材料ガスは、図1の矢印で示すようにガス導入口22から導入されてヒータ7に加熱される基板5の近傍を通過し、反応管4を通過し、ガス排気口23から排出される。このとき図2に示す断面形状においては材料ガスは紙面に垂直に通過することになるが、反応管4は中央においては側方両端よりも高さが低くなっているため、材料ガスに対して作用する流路抵抗は中央において大きくなる。
この気相成長装置において成膜を行なう際には、材料ガスは、図1の矢印で示すようにガス導入口22から導入されてヒータ7に加熱される基板5の近傍を通過し、反応管4を通過し、ガス排気口23から排出される。このとき図2に示す断面形状においては材料ガスは紙面に垂直に通過することになるが、反応管4は中央においては側方両端よりも高さが低くなっているため、材料ガスに対して作用する流路抵抗は中央において大きくなる。
従来の気相成長装置においては図11に示すように、側壁近傍よりも中央の方が流速が速くなっていたが、本実施の形態では、中央の流速は流路抵抗によって抑えられるため、結果的には反応管4内での材料ガスの流速分布は図3に示すようになる。こうして、中央と側壁近傍とで流速の差が小さくなるので、反応管4の幅方向中央部において基板5に対応する程度の幅の範囲内を流れる材料ガスは流速がほぼ均一なものとなる。図3を図11と比較すると、流速分布の改善度合いが明らかである。このように流速分布が均一化された結果、基板5の面内に生成される膜の厚みはほぼ均一なものとなる。従来の気相成長装置によって成膜した場合と本発明を適用した本実施の形態における気相成長装置によって成膜した場合とで、得られた膜の厚みのばらつきを比較したグラフを図4に示す。図4によれば、従来例では1枚の基板の面内で膜厚は±6%程度の差を生じていたが、本実施の形態では±1%程度に抑えることができており、本発明の適用により大幅な改善が達成されていることがわかる。
なお、本実施の形態では、縦断面図が図1に示すようなもの、すなわち、ガス導入口22およびガス排気口23と反応管4の中央部とで断面形状の高さが異なるものを例示したが、これに限らず、図5に示すように、ガス導入口22およびガス排気口23と反応管4の中央部とで断面形状の高さが一定となっているものであってもよい。ガス導入口22およびガス排気口23の横断面形状は、反応管4と等しくてもよい。
また、バレル型反応管では、複数の基板を保持する基板保持部合体は多角柱状、反応管は円筒状のため、個々の基板と対向する反応管内壁は中央部が高く隣接基板との境界部が低くなるのが通常であるが、本発明を適用して、個々の基板と対向する反応管内壁が中央部が低く隣接基板との境界部が高くなるように、反応管を略星型筒状としてもよい。また、円形横型などと呼称される背の低い円筒状の反応管では、基板は反応管の底円盤(または天井円盤)に周状に配置され、円筒軸に位置するガス導入口から周囲へガスが供給されるが、隣接基板間に仕切りを設ける場合、本発明を適用して、基板の対向側の天井円盤(または底円盤)を、個々の基板と対向する反応管内壁が中央部が低く隣接基板との境界部が高くなるように、波形が放射状に配置された形状にしてもよい。
(実施の形態2)
(構成)
図6を参照して、本発明に基づく実施の形態2における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4hを備える。図6ではこの気相成長装置のうち反応管4h近傍の横断面形状を示している。反応管4hのように、反応管の外形断面は矩形であってもよい。反応管4hにおいては内部空間の上側の輪郭がV字形となっており、中央が両脇に比べて低くなっている。基板5a,5bは基板保持部16に保持される。気相成長装置は、このように複数枚の基板を同時に保持して成膜するものであってよい。基板保持部16は基板5a,5bをそれぞれ回転させる機構を備えており、基板5a,5bはそれぞれの位置で自転させられる。基板5a,5bはそれぞれ天井の平坦な斜面の真下に位置するように配置されている。
(構成)
図6を参照して、本発明に基づく実施の形態2における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4hを備える。図6ではこの気相成長装置のうち反応管4h近傍の横断面形状を示している。反応管4hのように、反応管の外形断面は矩形であってもよい。反応管4hにおいては内部空間の上側の輪郭がV字形となっており、中央が両脇に比べて低くなっている。基板5a,5bは基板保持部16に保持される。気相成長装置は、このように複数枚の基板を同時に保持して成膜するものであってよい。基板保持部16は基板5a,5bをそれぞれ回転させる機構を備えており、基板5a,5bはそれぞれの位置で自転させられる。基板5a,5bはそれぞれ天井の平坦な斜面の真下に位置するように配置されている。
図6では、気相成長装置のうち反応管4h近傍の横断面形状のみを示したが、他の部分の構成は実施の形態1で示したものと同様である。
(作用・効果)
本実施の形態においては、図6に示されるように天井が平坦な斜面となっていることから基板の上に広がる空間の高さは幅方向に一様に変化するので、通過する材料ガスの幅方向の流速分布もほぼ一様に変化したものとなる。各基板は自転しているので、各基板の各部位は材料ガスの流速が速い部分と遅い部分とに交互に均等にさらされることとなり、その結果、各基板の面内の膜厚分布を均一なものとすることができる。
本実施の形態においては、図6に示されるように天井が平坦な斜面となっていることから基板の上に広がる空間の高さは幅方向に一様に変化するので、通過する材料ガスの幅方向の流速分布もほぼ一様に変化したものとなる。各基板は自転しているので、各基板の各部位は材料ガスの流速が速い部分と遅い部分とに交互に均等にさらされることとなり、その結果、各基板の面内の膜厚分布を均一なものとすることができる。
なお、基板保持部16が保持する基板の数は、図6では2枚のように見えているが、図6における紙面奥手前方向に同様に複数列並んでいてもよい。すなわち、たとえば紙面奥手前方向にn列だけ配列されている場合、同時に配置できる基板の枚数は2n枚となる。あるいは、反応管4hの幅方向に並ぶ基板の枚数は2枚に限らず、左右対称に片側m枚ずつ(m≧2)の合計2m枚並べてもよい。その場合、紙面奥手前方向にm列だけ配列されているとすると同時に配置できる基板の枚数は2mn枚となる。
(実施の形態3)
(構成)
図7を参照して、本発明に基づく実施の形態3における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4iを備える。図7ではこの気相成長装置のうち反応管4i近傍の横断面形状を示している。反応管4iは外形断面は矩形であるが内部形状は特殊な形状となっている。すなわち、上面には幅方向に並ぶ基板の数に等しい数の頂部がある。この例では、幅方向に2枚の基板5a,5bが並んでいるので2ヶ所の頂部8a,8bがある。各頂部の位置は横断面図で見たときに各基板の中心にそれぞれほぼ一致する位置となっている。
(構成)
図7を参照して、本発明に基づく実施の形態3における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4iを備える。図7ではこの気相成長装置のうち反応管4i近傍の横断面形状を示している。反応管4iは外形断面は矩形であるが内部形状は特殊な形状となっている。すなわち、上面には幅方向に並ぶ基板の数に等しい数の頂部がある。この例では、幅方向に2枚の基板5a,5bが並んでいるので2ヶ所の頂部8a,8bがある。各頂部の位置は横断面図で見たときに各基板の中心にそれぞれほぼ一致する位置となっている。
この気相成長装置では、反応管4iの内部空間を基板の中心を通る平面で切ったときの横断面形状、すなわち、図7に示す反応管4iの断面形状で、反応管4iの内部空間の高さに注目したときに、基板の中央における高さより基板の側方両端における高さの方が大きくなっている。基板が複数ある場合には、各基板についてその基板の中央における高さとその基板の側方両端における高さとを比較して、側方両端における高さの方が大きくなっていればよい。反応管4iの内部空間の高さが最大になる位置は、幅方向両側の内壁の位置に一致している必要はない。図7では、内壁からやや中央寄りの位置で最も高くなっている。
図7では、気相成長装置のうち反応管4i近傍の横断面形状のみを示したが、他の部分の構成は実施の形態1で示したものと同様である。
(作用・効果)
本実施の形態においては、基板の上に広がる空間の高さは各基板ごとに基板の中央より側方両端の方が高くなっているので、通過する材料ガスの流速は各基板の中央においては流路抵抗によって抑えられ、その結果、各基板の幅の範囲ごとに中央と両端とでの流速の差が小さくなる。したがって、各基板の面内に生成される膜の厚みは従来より均一なものとなる。
本実施の形態においては、基板の上に広がる空間の高さは各基板ごとに基板の中央より側方両端の方が高くなっているので、通過する材料ガスの流速は各基板の中央においては流路抵抗によって抑えられ、その結果、各基板の幅の範囲ごとに中央と両端とでの流速の差が小さくなる。したがって、各基板の面内に生成される膜の厚みは従来より均一なものとなる。
(実施の形態4)
(構成)
図8を参照して、本発明に基づく実施の形態4における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4jを備える。図8ではこの気相成長装置のうち反応管4j近傍の横断面形状を示している。この気相成長装置では、反応管4jの上部に基板保持部16jおよびヒータ7が設けられている。基板保持部16jは基板5a,5bを、被処理面が下方を向くように保持することができる。反応管4jの内部空間は下側の内壁が反応管4jの内部に向かって凸形状となっている。
(構成)
図8を参照して、本発明に基づく実施の形態4における気相成長装置について説明する。本実施の形態における気相成長装置は反応管4jを備える。図8ではこの気相成長装置のうち反応管4j近傍の横断面形状を示している。この気相成長装置では、反応管4jの上部に基板保持部16jおよびヒータ7が設けられている。基板保持部16jは基板5a,5bを、被処理面が下方を向くように保持することができる。反応管4jの内部空間は下側の内壁が反応管4jの内部に向かって凸形状となっている。
基板保持装置16jは各基板を自転させるとともに公転させることもできるように構成されている。
図8では、気相成長装置のうち反応管4j近傍の横断面形状のみを示したが、他の部分の構成は実施の形態1で示したものと同様である。
(作用・効果)
図8に示す断面形状においては材料ガスは紙面に垂直に通過することになるが、反応管4jは中央においては側方両端よりも内部空間の上下方向の長さが低くなっているため、材料ガスに対して作用する流路抵抗は中央において大きくなる。中央の流速は流路抵抗によって抑えられるため、中央と側壁近傍とで流速の差が小さくなる。さらに基板保持部16jは複数の基板を公転させながら保持しているので、各基板にはほぼ均一に成膜されることとなる。
図8に示す断面形状においては材料ガスは紙面に垂直に通過することになるが、反応管4jは中央においては側方両端よりも内部空間の上下方向の長さが低くなっているため、材料ガスに対して作用する流路抵抗は中央において大きくなる。中央の流速は流路抵抗によって抑えられるため、中央と側壁近傍とで流速の差が小さくなる。さらに基板保持部16jは複数の基板を公転させながら保持しているので、各基板にはほぼ均一に成膜されることとなる。
本実施の形態においては、複数の基板を公転させる構成を示したが、実施の形態1においても複数の基板を保持して公転させるようにしてもよい。実施の形態1〜4において、複数の基板は円周状に並べてもよく、さらにこれらの基板を自転あるいは公転させてもよい。これらの基板を自転させつつ公転させてもよい。たとえば内周に3枚、外周に6枚など、複数の円周に沿って基板を並べてもよい。
なお、上記各実施の形態で示した反応管の内部空間の形状の詳細な条件は、反応管の寸法、材料ガスの流速、ガス種構成、設定温度などによって決まる。
(実施の形態5)
(成膜済基板の製造方法)
本発明に基づく実施の形態5における成膜済基板の製造方法について説明する。この成膜済基板の製造方法は、実施の形態1〜4のいずれかで説明した気相成長装置を用いて基板の表面に成膜する工程を含む。
(成膜済基板の製造方法)
本発明に基づく実施の形態5における成膜済基板の製造方法について説明する。この成膜済基板の製造方法は、実施の形態1〜4のいずれかで説明した気相成長装置を用いて基板の表面に成膜する工程を含む。
(作用・効果)
本実施の形態における成膜済基板の製造方法では、実施の形態1〜4のいずれかで説明した気相成長装置すなわち膜厚を従来より均一にすることのできる気相成長装置を使用しているので、膜厚が均一な成膜済基板を得ることができる。したがって、たとえば半導体装置に用いる基板の場合、特性のばらつきを抑えることができる。
本実施の形態における成膜済基板の製造方法では、実施の形態1〜4のいずれかで説明した気相成長装置すなわち膜厚を従来より均一にすることのできる気相成長装置を使用しているので、膜厚が均一な成膜済基板を得ることができる。したがって、たとえば半導体装置に用いる基板の場合、特性のばらつきを抑えることができる。
なお、今回開示した上記実施の形態はすべての点で例示であって制限的なものではない。本発明の範囲は上記した説明ではなくて特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内でのすべての変更を含むものである。
1 反応炉、4,4h,4i,4j,104 反応管、5 基板、6,16,16j 基板保持部、7 ヒータ、8a,8b 頂部、22 ガス導入口、23 ガス排気口、91 矢印。
Claims (5)
- 材料ガスを通過させるための反応管と、
処理対象物である基板の表面が前記反応管の内部に露出するように前記基板を保持するための基板保持部とを備える気相成長装置であって、
前記反応管の内部空間を前記基板の中心を通る平面で切ったときの横断面形状は、前記反応管の中央における前記基板の表面に鉛直な方向の長さより前記反応管の側方両端における前記基板の表面に鉛直な方向の長さの方が大きくなっている、気相成長装置。 - 材料ガスを通過させるための反応管と、
処理対象物である基板の表面が前記反応管の内部に露出するように前記基板を保持するための基板保持部とを備える気相成長装置であって、
前記反応管の内部空間を前記基板の中心を通る平面で切ったときの横断面形状は、前記基板の中央における前記基板の表面に鉛直な方向の長さより前記基板の両端における前記基板の表面に鉛直な方向の長さの方が大きくなっている、気相成長装置。 - 前記反応管のうち前記基板と対向する内壁が前記反応管の内部に向かって凸形状となっている、請求項1または2に記載の気相成長装置。
- 前記基板保持部は前記基板を自転させながら保持することができるように構成されている、請求項1から3のいずれかに記載の気相成長装置。
- 請求項1から4のいずれかに記載の気相成長装置を用いて前記基板の表面に成膜する工程を含む、成膜済基板の製造方法。
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