JPH11183265A - 熱電対をもつ温度測定器 - Google Patents
熱電対をもつ温度測定器Info
- Publication number
- JPH11183265A JPH11183265A JP9346695A JP34669597A JPH11183265A JP H11183265 A JPH11183265 A JP H11183265A JP 9346695 A JP9346695 A JP 9346695A JP 34669597 A JP34669597 A JP 34669597A JP H11183265 A JPH11183265 A JP H11183265A
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- Prior art keywords
- thermocouple
- gas
- tube
- insulating tube
- temperature measuring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measuring Temperature Or Quantity Of Heat (AREA)
Abstract
(57)【要約】
【課題】熱電対を脆弱化する物質を含むガスによって熱
電対が脆弱化されてしまうことのない熱電対をもつ温度
測定器を提供する。 【解決手段】本発明の熱電対をもつ温度測定器は、軸長
方向に貫通する2本の挿入孔10、10をもつ絶縁管1
2と、絶縁管12の挿入孔10、10に挿置された絶縁
管12の一端14側に接合点20をもつ熱電対22、2
2と、接合点20をもつ側と反対側の絶縁管10の端部
16に固定され挿入孔12に熱電対22と無反応性のガ
スを導入するガス導入部材30と、を有することを特徴
とする。
電対が脆弱化されてしまうことのない熱電対をもつ温度
測定器を提供する。 【解決手段】本発明の熱電対をもつ温度測定器は、軸長
方向に貫通する2本の挿入孔10、10をもつ絶縁管1
2と、絶縁管12の挿入孔10、10に挿置された絶縁
管12の一端14側に接合点20をもつ熱電対22、2
2と、接合点20をもつ側と反対側の絶縁管10の端部
16に固定され挿入孔12に熱電対22と無反応性のガ
スを導入するガス導入部材30と、を有することを特徴
とする。
Description
【0001】
【発明の属する技術分野】本発明は、溶融金属などの温
度を計測する熱電対をもつ温度測定器に関する。
度を計測する熱電対をもつ温度測定器に関する。
【0002】
【従来の技術】従来より、図4に示されるように、軸長
方向に貫通する2本の挿入孔110、110をもつ絶縁
管100と、この絶縁管100の挿入孔110、110
に挿置され一端140側に接合点200をもつ熱電対2
20と、からなる温度測定器がある。この温度測定器で
は、熱電対の2本の線が絶縁管の互いに隔てられて設け
られた軸長方向に貫通する2本の挿入孔110、110
に挿置されているため、熱電対の2本の線が測温中に互
いに触れてしまうことがなく高い測温精度が得られる。
方向に貫通する2本の挿入孔110、110をもつ絶縁
管100と、この絶縁管100の挿入孔110、110
に挿置され一端140側に接合点200をもつ熱電対2
20と、からなる温度測定器がある。この温度測定器で
は、熱電対の2本の線が絶縁管の互いに隔てられて設け
られた軸長方向に貫通する2本の挿入孔110、110
に挿置されているため、熱電対の2本の線が測温中に互
いに触れてしまうことがなく高い測温精度が得られる。
【0003】ところで、測温条件によっては、熱電対を
脆弱化させてしまうガスが雰囲気中に含まれていること
がある。例えば、アルミナ製の保護管に不純物として含
まれる酸化珪素が気化し、この酸化珪素が白金−白金ロ
ジウム系の熱電対と反応して熱電対を脆弱化させてしま
う。例えば図4に示される従来の温度測定器では、気化
した酸化珪素が、絶縁管100の一端140あるいは当
接端150から侵入し、熱電対220、220に触れて
熱電対220、220を脆弱化してしまう。その結果、
温度測定器の測温精度が低下し、正確な測温ができなく
なってしまう。
脆弱化させてしまうガスが雰囲気中に含まれていること
がある。例えば、アルミナ製の保護管に不純物として含
まれる酸化珪素が気化し、この酸化珪素が白金−白金ロ
ジウム系の熱電対と反応して熱電対を脆弱化させてしま
う。例えば図4に示される従来の温度測定器では、気化
した酸化珪素が、絶縁管100の一端140あるいは当
接端150から侵入し、熱電対220、220に触れて
熱電対220、220を脆弱化してしまう。その結果、
温度測定器の測温精度が低下し、正確な測温ができなく
なってしまう。
【0004】
【発明が解決しようとする課題】本発明は上記実情に鑑
みてなされたものであり、熱電対を脆弱化する物質を含
むガスによって熱電対が脆弱化されてしまうことのない
熱電対をもつ温度測定器を提供することを目的とする。
みてなされたものであり、熱電対を脆弱化する物質を含
むガスによって熱電対が脆弱化されてしまうことのない
熱電対をもつ温度測定器を提供することを目的とする。
【0005】
【課題を解決するための手段】上記課題を解決する本発
明の熱電対をもつ温度測定器は、軸長方向に貫通する2
本の挿入孔をもつ絶縁管と、該絶縁管の該挿入孔に挿置
された該絶縁管の一端側に接合点をもつ熱電対と、該接
合点をもつ側と反対側の該絶縁管の端部に固定され該挿
入孔に該熱電対と無反応性のガス(以下、無反応性ガス
と称する)を導入するガス導入部材と、を有することを
特徴とする。なお、以下の説明では、絶縁管の一端とは
熱電対の接合点をもつ側の端部を指し、絶縁管の他端と
は熱電対の接合点をもつ側と反対側の端部を指すことに
する。
明の熱電対をもつ温度測定器は、軸長方向に貫通する2
本の挿入孔をもつ絶縁管と、該絶縁管の該挿入孔に挿置
された該絶縁管の一端側に接合点をもつ熱電対と、該接
合点をもつ側と反対側の該絶縁管の端部に固定され該挿
入孔に該熱電対と無反応性のガス(以下、無反応性ガス
と称する)を導入するガス導入部材と、を有することを
特徴とする。なお、以下の説明では、絶縁管の一端とは
熱電対の接合点をもつ側の端部を指し、絶縁管の他端と
は熱電対の接合点をもつ側と反対側の端部を指すことに
する。
【0006】この絶縁管の他端においてはガス導入部材
により常に無反応性ガスが挿入孔内に導入されているた
め、熱電対を脆弱化する物質を含むガス(以下、脆弱化
ガスと称する)は挿入孔内に侵入することができない。
また、絶縁管の一端は、ここから放出される無反応性ガ
スによってカバーされている。さらに、絶縁管の挿入孔
内に発生した脆弱化ガスは、挿入孔内を流れる無反応性
ガスによって絶縁管の一端側に運び出される。それゆ
え、脆弱化ガスは熱電対と接触することができない。こ
れらの結果、熱電対を脆弱化する物質を含むガスによっ
て熱電対が脆弱化されてしまうことが防止される。
により常に無反応性ガスが挿入孔内に導入されているた
め、熱電対を脆弱化する物質を含むガス(以下、脆弱化
ガスと称する)は挿入孔内に侵入することができない。
また、絶縁管の一端は、ここから放出される無反応性ガ
スによってカバーされている。さらに、絶縁管の挿入孔
内に発生した脆弱化ガスは、挿入孔内を流れる無反応性
ガスによって絶縁管の一端側に運び出される。それゆ
え、脆弱化ガスは熱電対と接触することができない。こ
れらの結果、熱電対を脆弱化する物質を含むガスによっ
て熱電対が脆弱化されてしまうことが防止される。
【0007】
【発明の実施の形態】絶縁管は、アルミナなどの絶縁体
から形成することができる。その管の長さは、熱電対の
長さに応じて選択する。一本の管として成形された絶縁
管を用いてもよいし、長さの短い小管がつなぎ合わされ
てなる絶縁管を用いてもよい。但し、後者の小管がつな
ぎ合わされてなる絶縁管を用いる場合、小管の間に隙間
ができないように小管どうしをつなぎ合わせる。絶縁管
の挿入孔の大きさ(径)は、熱電対が挿置されるスペー
スと、無反応性ガスが流されるスペースと、を考慮して
選択する。
から形成することができる。その管の長さは、熱電対の
長さに応じて選択する。一本の管として成形された絶縁
管を用いてもよいし、長さの短い小管がつなぎ合わされ
てなる絶縁管を用いてもよい。但し、後者の小管がつな
ぎ合わされてなる絶縁管を用いる場合、小管の間に隙間
ができないように小管どうしをつなぎ合わせる。絶縁管
の挿入孔の大きさ(径)は、熱電対が挿置されるスペー
スと、無反応性ガスが流されるスペースと、を考慮して
選択する。
【0008】熱電対は、その種類で特に限定されるもの
ではなく、白金−白金ロジウム系の熱電対などを用いる
ことができる。熱電対の接合点が絶縁管の一端から突出
している場合には、この絶縁管の一端から突出している
熱電対部分を、アルミナやPtなどよりなる多孔質のカ
バーなどで覆うことが好ましい。これにより、絶縁管の
一端から放出された無反応性ガスをその中に保持するこ
とができる。それゆえ、この絶縁管の一端から突出して
いる熱電対部分が常に熱電対と無反応性のガスに包まれ
た状態となり、外部の脆弱化ガスはこの熱電対部分に接
触することができなくなる。なお、このような多孔質カ
バーは多孔質であるため、内部のガスはその多くの孔を
通じて外部に適切に排出される。
ではなく、白金−白金ロジウム系の熱電対などを用いる
ことができる。熱電対の接合点が絶縁管の一端から突出
している場合には、この絶縁管の一端から突出している
熱電対部分を、アルミナやPtなどよりなる多孔質のカ
バーなどで覆うことが好ましい。これにより、絶縁管の
一端から放出された無反応性ガスをその中に保持するこ
とができる。それゆえ、この絶縁管の一端から突出して
いる熱電対部分が常に熱電対と無反応性のガスに包まれ
た状態となり、外部の脆弱化ガスはこの熱電対部分に接
触することができなくなる。なお、このような多孔質カ
バーは多孔質であるため、内部のガスはその多くの孔を
通じて外部に適切に排出される。
【0009】ガス導入部材は、絶縁管の端部と、無反応
性ガスを送給するガス送給装置とを接続する管状のガス
導入管で構成できる。ガスの種類は熱電対の種類に応じ
て選択する。例えば、白金−白金ロジウム系の熱電対が
用いられていれば、空気やアルゴン(Ar)ガスや窒素
ガスなどを用いることができる。この場合、絶縁管の他
端から出ている熱電対部分は、ガス導入管の管内を伝わ
らせ、ガス導入管の壁部を貫通する貫通穴を通して外部
に導出することができる。この貫通穴は、脆弱化ガスの
届かない位置のガス導入管の壁部に設けられる。このよ
うなガス導入部材は、絶縁管の他端から出ている熱電対
部分をガス導入管内に収納する。それゆえ、絶縁管の他
端から出ている熱電対部分も脆弱化ガスを接触できない
ようにすることができる。
性ガスを送給するガス送給装置とを接続する管状のガス
導入管で構成できる。ガスの種類は熱電対の種類に応じ
て選択する。例えば、白金−白金ロジウム系の熱電対が
用いられていれば、空気やアルゴン(Ar)ガスや窒素
ガスなどを用いることができる。この場合、絶縁管の他
端から出ている熱電対部分は、ガス導入管の管内を伝わ
らせ、ガス導入管の壁部を貫通する貫通穴を通して外部
に導出することができる。この貫通穴は、脆弱化ガスの
届かない位置のガス導入管の壁部に設けられる。このよ
うなガス導入部材は、絶縁管の他端から出ている熱電対
部分をガス導入管内に収納する。それゆえ、絶縁管の他
端から出ている熱電対部分も脆弱化ガスを接触できない
ようにすることができる。
【0010】このとき、ガス導入部材で導入されるガス
の導入量は、無反応性ガスが絶縁体の一端側から放出さ
れるときに熱電対の接合点を冷却してしまわない程度に
調節する。無反応性ガスの導入量の調節は、ガス送給装
置の送給量によって調節したり、あるいはガス導入管の
途中にニードルバルブなど流量調節バルブを設けて調節
することができる。
の導入量は、無反応性ガスが絶縁体の一端側から放出さ
れるときに熱電対の接合点を冷却してしまわない程度に
調節する。無反応性ガスの導入量の調節は、ガス送給装
置の送給量によって調節したり、あるいはガス導入管の
途中にニードルバルブなど流量調節バルブを設けて調節
することができる。
【0011】本発明の熱電対をもつ温度測定器では、絶
縁管は、先端閉止のパイプ状の保護管内に収納されてい
ることが好ましい。この保護管により、絶縁管および熱
電対を外部から保護することができる。また、保護管
は、熱電対をもつ絶縁管を保持するアルミナ製の第1保
護管と、該第1保護管を保持するMo−ZrO2系のサ
ーメットからなる第2保護管と、からなることが好まし
い。第1保護管により温度測定器の耐熱性を向上させる
ことができる。また、第2保護管により温度測定器の機
械的強度、並びに溶融金属に対する耐浸食性及び耐熱衝
撃性を向上させることができる。
縁管は、先端閉止のパイプ状の保護管内に収納されてい
ることが好ましい。この保護管により、絶縁管および熱
電対を外部から保護することができる。また、保護管
は、熱電対をもつ絶縁管を保持するアルミナ製の第1保
護管と、該第1保護管を保持するMo−ZrO2系のサ
ーメットからなる第2保護管と、からなることが好まし
い。第1保護管により温度測定器の耐熱性を向上させる
ことができる。また、第2保護管により温度測定器の機
械的強度、並びに溶融金属に対する耐浸食性及び耐熱衝
撃性を向上させることができる。
【0012】
【実施例】以下、実施例により本発明を具体的に説明す
る。 (実施例1)本実施例の熱電対をもつ温度測定器は、図
1および図2に示されるように、軸長方向に貫通する2
本の挿入孔10、10をもつ絶縁管12と、絶縁管12
の挿入孔10、10に挿置された絶縁管12の一端14
側に接合点20をもつ熱電対22、22と、接合点20
をもつ側と反対側の絶縁管12の端部(他端)16に固
定され挿入孔12に熱電対22と無反応性のガス(無反
応性ガス)を導入するガス導入部材30と、を有する。
る。 (実施例1)本実施例の熱電対をもつ温度測定器は、図
1および図2に示されるように、軸長方向に貫通する2
本の挿入孔10、10をもつ絶縁管12と、絶縁管12
の挿入孔10、10に挿置された絶縁管12の一端14
側に接合点20をもつ熱電対22、22と、接合点20
をもつ側と反対側の絶縁管12の端部(他端)16に固
定され挿入孔12に熱電対22と無反応性のガス(無反
応性ガス)を導入するガス導入部材30と、を有する。
【0013】この熱電対をもつ温度測定器では、絶縁管
10が、熱電対22をもつ絶縁管12を保持するアルミ
ナ製の第1保護管40と、第1保護管40を保持するM
o−ZrO2系のサーメットからなる第2保護管42
と、からなる先端閉止のパイプ状の保護管内に収納され
ている。また、絶縁管12の外周面12aと第1保護管
40の内周面40aとで囲まれる隙間46の開口端、並
びに第1保護管40の外周面と第2保護管42の内周面
とで囲まれる隙間48の開口端には、それぞれシリコン
系シール材、またはアルミナセメント、ガラスウールな
どのシール材50、52が10〜20mm程度の深さで
詰められている。
10が、熱電対22をもつ絶縁管12を保持するアルミ
ナ製の第1保護管40と、第1保護管40を保持するM
o−ZrO2系のサーメットからなる第2保護管42
と、からなる先端閉止のパイプ状の保護管内に収納され
ている。また、絶縁管12の外周面12aと第1保護管
40の内周面40aとで囲まれる隙間46の開口端、並
びに第1保護管40の外周面と第2保護管42の内周面
とで囲まれる隙間48の開口端には、それぞれシリコン
系シール材、またはアルミナセメント、ガラスウールな
どのシール材50、52が10〜20mm程度の深さで
詰められている。
【0014】絶縁管12はアルミナ(Al2O3)よりな
る直線状の管である。その外径は4mmであって、全長
は1000mmである。軸長方向に延びる2本の挿入孔
10の内径はそれぞれ1mmである。熱電対22は、白
金線および白金ロジウム線よりなる。それぞれの線径は
0.5mmである。接合点20は、絶縁管12の一端1
4側に突出している。
る直線状の管である。その外径は4mmであって、全長
は1000mmである。軸長方向に延びる2本の挿入孔
10の内径はそれぞれ1mmである。熱電対22は、白
金線および白金ロジウム線よりなる。それぞれの線径は
0.5mmである。接合点20は、絶縁管12の一端1
4側に突出している。
【0015】ガス導入部材30は、絶縁管の他端16
と、無反応性ガスを送給するガス送給装置(図示せず)
とを接続する管状のガス導入管32で構成される。この
ガス導入管32の途中には、無反応性ガスの導入量を任
意に調節することができるニードルバルブ(図示せず)
が取り付けられている。ガス導入部材30は、絶縁管1
2の他端16から導出されている導出部分22’、2
2’の一部を収納する。この導出部分22’、22’は
ガス導入管32の管内を伝い、ガス導入管32の壁部に
設けられた貫通穴32a、32aを通して外部に導出さ
れる。この貫通穴32a、32aは、絶縁管12の他端
16から十分に離れた位置にある。
と、無反応性ガスを送給するガス送給装置(図示せず)
とを接続する管状のガス導入管32で構成される。この
ガス導入管32の途中には、無反応性ガスの導入量を任
意に調節することができるニードルバルブ(図示せず)
が取り付けられている。ガス導入部材30は、絶縁管1
2の他端16から導出されている導出部分22’、2
2’の一部を収納する。この導出部分22’、22’は
ガス導入管32の管内を伝い、ガス導入管32の壁部に
設けられた貫通穴32a、32aを通して外部に導出さ
れる。この貫通穴32a、32aは、絶縁管12の他端
16から十分に離れた位置にある。
【0016】第1保護管40は、アルミナよりなる先端
閉止のパイプ状の管である。その外径は8mm、内径は
5mm、全長は約1000mmである。第2保護管42
は、Mo−ZrO2系のサーメットからなる先端閉止の
パイプ状の管である。その外径は24mm、内径は13
mm、全長は約1000mmである。
閉止のパイプ状の管である。その外径は8mm、内径は
5mm、全長は約1000mmである。第2保護管42
は、Mo−ZrO2系のサーメットからなる先端閉止の
パイプ状の管である。その外径は24mm、内径は13
mm、全長は約1000mmである。
【0017】本実施例の熱電対をもつ温度測定器では、
ガス導入部材30により絶縁管12の他端16から導入
された無反応性ガスは、挿入孔10内を伝わって一端1
4側に放出され、続いて絶縁管12と第1保護管40と
の間の隙間46を通って外部へ放出される。それゆえ、
絶縁管12の一端14から突出している突出部分22”
の周囲は、絶縁管12の一端14側に放出された無反応
性ガスの雰囲気となる。
ガス導入部材30により絶縁管12の他端16から導入
された無反応性ガスは、挿入孔10内を伝わって一端1
4側に放出され、続いて絶縁管12と第1保護管40と
の間の隙間46を通って外部へ放出される。それゆえ、
絶縁管12の一端14から突出している突出部分22”
の周囲は、絶縁管12の一端14側に放出された無反応
性ガスの雰囲気となる。
【0018】なお、ガス導入部材30により絶縁管12
の他端16から導入される無反応性ガスの導入量は、一
端14側に放出された無反応性ガスによって接合点20
の雰囲気の温度を低下させない程度のわずかな量であ
る。ところで、本温度測定器では、測温条件によって、
アルミナ製の絶縁管12及び第1保護管40に不純物と
して含まれる酸化珪素が気化することがある。あるいは
また、第2保護管42から酸化モリブデンガスが発生す
ることもある。
の他端16から導入される無反応性ガスの導入量は、一
端14側に放出された無反応性ガスによって接合点20
の雰囲気の温度を低下させない程度のわずかな量であ
る。ところで、本温度測定器では、測温条件によって、
アルミナ製の絶縁管12及び第1保護管40に不純物と
して含まれる酸化珪素が気化することがある。あるいは
また、第2保護管42から酸化モリブデンガスが発生す
ることもある。
【0019】絶縁管12の挿入孔10内に発生した酸化
珪素は、挿入孔10内を流れる無反応性ガスによって絶
縁管12の一端14側に運び出される。また、絶縁管1
2の外周面12aおよび第1保護管40の内周面40a
で発生した酸化珪素は、隙間46を流れる無反応性ガス
によって外部へ放出される。第2保護管42の内周面で
発生した酸化モリブデンガスは、第1保護管40と第2
保護管42との間の隙間48を通じて保護管の開口端よ
り放出される。
珪素は、挿入孔10内を流れる無反応性ガスによって絶
縁管12の一端14側に運び出される。また、絶縁管1
2の外周面12aおよび第1保護管40の内周面40a
で発生した酸化珪素は、隙間46を流れる無反応性ガス
によって外部へ放出される。第2保護管42の内周面で
発生した酸化モリブデンガスは、第1保護管40と第2
保護管42との間の隙間48を通じて保護管の開口端よ
り放出される。
【0020】このとき、これらの脆弱化ガスが絶縁管1
2の一端14および他端16に近づいても挿入孔10内
に侵入することができないため、脆弱化ガスは、絶縁管
12の挿入孔内にある熱電対部分に接触することができ
ない。また、脆弱化ガスは、絶縁管の他端16から導出
されている導出部分22’、22’及び絶縁管12の一
端14から突出している突出部分22”にも接触するこ
とができない。それゆえ、熱電対22、22は、脆弱化
ガスによって脆弱化されることがない。
2の一端14および他端16に近づいても挿入孔10内
に侵入することができないため、脆弱化ガスは、絶縁管
12の挿入孔内にある熱電対部分に接触することができ
ない。また、脆弱化ガスは、絶縁管の他端16から導出
されている導出部分22’、22’及び絶縁管12の一
端14から突出している突出部分22”にも接触するこ
とができない。それゆえ、熱電対22、22は、脆弱化
ガスによって脆弱化されることがない。
【0021】本実施例の熱電対をもつ温度測定器は、耐
熱性、機械的強度、並びに溶融金属に対する耐浸食性及
び耐熱衝撃性に優れるため、特に溶融金属の測温に適し
ている。 (実施例2)本実施例の熱電対をもつ温度測定器は、実
施例1の第1保護管40及び第2保護管42の代わり
に、図3に示されるように、絶縁管12の一端14側に
突出している熱電対22、22の突出部分22”(熱電
対22の接合点20を含む)を覆うようにアルミナまた
はPtよりなる多孔質カバー60をもつ。この多孔質カ
バー60内の突出部分22”の周囲は空間になってい
る。
熱性、機械的強度、並びに溶融金属に対する耐浸食性及
び耐熱衝撃性に優れるため、特に溶融金属の測温に適し
ている。 (実施例2)本実施例の熱電対をもつ温度測定器は、実
施例1の第1保護管40及び第2保護管42の代わり
に、図3に示されるように、絶縁管12の一端14側に
突出している熱電対22、22の突出部分22”(熱電
対22の接合点20を含む)を覆うようにアルミナまた
はPtよりなる多孔質カバー60をもつ。この多孔質カ
バー60内の突出部分22”の周囲は空間になってい
る。
【0022】多孔質カバー60は、絶縁管12の一端1
4から放出された無反応性ガスをその中に保持して、外
部の脆弱化ガスが内部に侵入することを防ぐことができ
る。それゆえ、この熱電対22、22の突出部分22”
は、常に無反応性ガスに包まれた状態となり、外部の脆
弱化ガスに接触することがなくなる。また、この温度測
定器においても、実施例1の温度測定器と同様に、脆弱
化ガスは絶縁管12の挿入孔内にある熱電対部分に接触
することができない。また、脆弱化ガスは、絶縁管の他
端16から導出されている導出部分22’、22’にも
接触することができない。それゆえ、熱電対22、22
は、脆弱化ガスによって脆弱化されることがない。
4から放出された無反応性ガスをその中に保持して、外
部の脆弱化ガスが内部に侵入することを防ぐことができ
る。それゆえ、この熱電対22、22の突出部分22”
は、常に無反応性ガスに包まれた状態となり、外部の脆
弱化ガスに接触することがなくなる。また、この温度測
定器においても、実施例1の温度測定器と同様に、脆弱
化ガスは絶縁管12の挿入孔内にある熱電対部分に接触
することができない。また、脆弱化ガスは、絶縁管の他
端16から導出されている導出部分22’、22’にも
接触することができない。それゆえ、熱電対22、22
は、脆弱化ガスによって脆弱化されることがない。
【0023】本実施例の熱電対をもつ温度測定器は、簡
易でかつ軽量であり、低コストで製造できる利点をも
つ。
易でかつ軽量であり、低コストで製造できる利点をも
つ。
【0024】
【効果】本発明の熱電対をもつ温度測定器では、熱電対
と反応性をもつガスが測温雰囲気中に含まれていても、
そのガスによる熱電対の脆弱化が防止される。それゆ
え、温度測定器の高い測温精度が維持され、長期間にわ
たって正確な測温ができるようになる。
と反応性をもつガスが測温雰囲気中に含まれていても、
そのガスによる熱電対の脆弱化が防止される。それゆ
え、温度測定器の高い測温精度が維持され、長期間にわ
たって正確な測温ができるようになる。
【図1】この図は、実施例1の熱電対をもつ温度測定器
の構成を概略的に示す側断面図である。
の構成を概略的に示す側断面図である。
【図2】この図は、図1に示される熱電対をもつ温度測
定器のA−Aの部分の水平断面図である。
定器のA−Aの部分の水平断面図である。
【図3】この図は、実施例2の熱電対をもつ温度測定器
の構成を概略的に示す側断面図である。
の構成を概略的に示す側断面図である。
【図4】この図は、従来の熱電対をもつ温度測定器の構
成を概略的に示す側断面図である。
成を概略的に示す側断面図である。
10:挿入孔 12:絶縁管 20:接合点 22:熱
電対 30:ガス導入部材 40:第1保護管 42:
第2保護管
電対 30:ガス導入部材 40:第1保護管 42:
第2保護管
Claims (3)
- 【請求項1】 軸長方向に貫通する2本の挿入孔をもつ
絶縁管と、 該絶縁管の該挿入孔に挿置された該絶縁管の一端側に接
合点をもつ熱電対と、 該接合点をもつ側と反対側の該絶縁管の端部に固定され
該挿入孔に該熱電対と無反応性のガスを導入するガス導
入部材と、 を有することを特徴とする熱電対をもつ温度測定器。 - 【請求項2】 前記絶縁管は、先端閉止のパイプ状の保
護管内に収納されている請求項1に記載の熱電対をもつ
温度測定器。 - 【請求項3】 前記保護管は、前記熱電対をもつ絶縁管
を保持するアルミナ製の第1保護管と、該第1保護管を
保持するMo−ZrO2系のサーメットからなる第2保
護管と、からなる請求項2に記載の熱電対をもつ温度測
定器。
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JP9346695A JPH11183265A (ja) | 1997-12-16 | 1997-12-16 | 熱電対をもつ温度測定器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9346695A JPH11183265A (ja) | 1997-12-16 | 1997-12-16 | 熱電対をもつ温度測定器 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11183265A true JPH11183265A (ja) | 1999-07-09 |
Family
ID=18385200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9346695A Pending JPH11183265A (ja) | 1997-12-16 | 1997-12-16 | 熱電対をもつ温度測定器 |
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US10600673B2 (en) | 2015-07-07 | 2020-03-24 | Asm Ip Holding B.V. | Magnetic susceptor to baseplate seal |
US10604847B2 (en) | 2014-03-18 | 2020-03-31 | Asm Ip Holding B.V. | Gas distribution system, reactor including the system, and methods of using the same |
US10605530B2 (en) | 2017-07-26 | 2020-03-31 | Asm Ip Holding B.V. | Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace |
US10607895B2 (en) | 2017-09-18 | 2020-03-31 | Asm Ip Holdings B.V. | Method for forming a semiconductor device structure comprising a gate fill metal |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10622375B2 (en) | 2016-11-07 | 2020-04-14 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by using the method |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US10643904B2 (en) | 2016-11-01 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for forming a semiconductor device and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10655221B2 (en) | 2017-02-09 | 2020-05-19 | Asm Ip Holding B.V. | Method for depositing oxide film by thermal ALD and PEALD |
US10658181B2 (en) | 2018-02-20 | 2020-05-19 | Asm Ip Holding B.V. | Method of spacer-defined direct patterning in semiconductor fabrication |
US10665452B2 (en) | 2016-05-02 | 2020-05-26 | Asm Ip Holdings B.V. | Source/drain performance through conformal solid state doping |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
US10683571B2 (en) | 2014-02-25 | 2020-06-16 | Asm Ip Holding B.V. | Gas supply manifold and method of supplying gases to chamber using same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US10707106B2 (en) | 2011-06-06 | 2020-07-07 | Asm Ip Holding B.V. | High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10714335B2 (en) | 2017-04-25 | 2020-07-14 | Asm Ip Holding B.V. | Method of depositing thin film and method of manufacturing semiconductor device |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US10734497B2 (en) | 2017-07-18 | 2020-08-04 | Asm Ip Holding B.V. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
US10734244B2 (en) | 2017-11-16 | 2020-08-04 | Asm Ip Holding B.V. | Method of processing a substrate and a device manufactured by the same |
US10741385B2 (en) | 2016-07-28 | 2020-08-11 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10787741B2 (en) | 2014-08-21 | 2020-09-29 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
US10804098B2 (en) | 2009-08-14 | 2020-10-13 | Asm Ip Holding B.V. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
USD900036S1 (en) | 2017-08-24 | 2020-10-27 | Asm Ip Holding B.V. | Heater electrical connector and adapter |
US10832903B2 (en) | 2011-10-28 | 2020-11-10 | Asm Ip Holding B.V. | Process feed management for semiconductor substrate processing |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10847371B2 (en) | 2018-03-27 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10851456B2 (en) | 2016-04-21 | 2020-12-01 | Asm Ip Holding B.V. | Deposition of metal borides |
USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US10854498B2 (en) | 2011-07-15 | 2020-12-01 | Asm Ip Holding B.V. | Wafer-supporting device and method for producing same |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867786B2 (en) | 2018-03-30 | 2020-12-15 | Asm Ip Holding B.V. | Substrate processing method |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10928731B2 (en) | 2017-09-21 | 2021-02-23 | Asm Ip Holding B.V. | Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same |
US10934619B2 (en) | 2016-11-15 | 2021-03-02 | Asm Ip Holding B.V. | Gas supply unit and substrate processing apparatus including the gas supply unit |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11001925B2 (en) | 2016-12-19 | 2021-05-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11056567B2 (en) | 2018-05-11 | 2021-07-06 | Asm Ip Holding B.V. | Method of forming a doped metal carbide film on a substrate and related semiconductor device structures |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US11069510B2 (en) | 2017-08-30 | 2021-07-20 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
US11114294B2 (en) | 2019-03-08 | 2021-09-07 | Asm Ip Holding B.V. | Structure including SiOC layer and method of forming same |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
US11127589B2 (en) | 2019-02-01 | 2021-09-21 | Asm Ip Holding B.V. | Method of topology-selective film formation of silicon oxide |
US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
US11171025B2 (en) | 2019-01-22 | 2021-11-09 | Asm Ip Holding B.V. | Substrate processing device |
US11205585B2 (en) | 2016-07-28 | 2021-12-21 | Asm Ip Holding B.V. | Substrate processing apparatus and method of operating the same |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227789B2 (en) | 2019-02-20 | 2022-01-18 | Asm Ip Holding B.V. | Method and apparatus for filling a recess formed within a substrate surface |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11233133B2 (en) | 2015-10-21 | 2022-01-25 | Asm Ip Holding B.V. | NbMC layers |
US11251068B2 (en) | 2018-10-19 | 2022-02-15 | Asm Ip Holding B.V. | Substrate processing apparatus and substrate processing method |
US11251040B2 (en) | 2019-02-20 | 2022-02-15 | Asm Ip Holding B.V. | Cyclical deposition method including treatment step and apparatus for same |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11274369B2 (en) | 2018-09-11 | 2022-03-15 | Asm Ip Holding B.V. | Thin film deposition method |
US11282698B2 (en) | 2019-07-19 | 2022-03-22 | Asm Ip Holding B.V. | Method of forming topology-controlled amorphous carbon polymer film |
US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
US11315794B2 (en) | 2019-10-21 | 2022-04-26 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching films |
US11339476B2 (en) | 2019-10-08 | 2022-05-24 | Asm Ip Holding B.V. | Substrate processing device having connection plates, substrate processing method |
US11342216B2 (en) | 2019-02-20 | 2022-05-24 | Asm Ip Holding B.V. | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
US11345999B2 (en) | 2019-06-06 | 2022-05-31 | Asm Ip Holding B.V. | Method of using a gas-phase reactor system including analyzing exhausted gas |
US11355338B2 (en) | 2019-05-10 | 2022-06-07 | Asm Ip Holding B.V. | Method of depositing material onto a surface and structure formed according to the method |
US11361990B2 (en) | 2018-05-28 | 2022-06-14 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by using the same |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11378337B2 (en) | 2019-03-28 | 2022-07-05 | Asm Ip Holding B.V. | Door opener and substrate processing apparatus provided therewith |
US11390945B2 (en) | 2019-07-03 | 2022-07-19 | Asm Ip Holding B.V. | Temperature control assembly for substrate processing apparatus and method of using same |
US11390946B2 (en) | 2019-01-17 | 2022-07-19 | Asm Ip Holding B.V. | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
US11393690B2 (en) | 2018-01-19 | 2022-07-19 | Asm Ip Holding B.V. | Deposition method |
US11401605B2 (en) | 2019-11-26 | 2022-08-02 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11414760B2 (en) | 2018-10-08 | 2022-08-16 | Asm Ip Holding B.V. | Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same |
US11424119B2 (en) | 2019-03-08 | 2022-08-23 | Asm Ip Holding B.V. | Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer |
US11430640B2 (en) | 2019-07-30 | 2022-08-30 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11437241B2 (en) | 2020-04-08 | 2022-09-06 | Asm Ip Holding B.V. | Apparatus and methods for selectively etching silicon oxide films |
US11443926B2 (en) | 2019-07-30 | 2022-09-13 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
US11469098B2 (en) | 2018-05-08 | 2022-10-11 | Asm Ip Holding B.V. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
US11476109B2 (en) | 2019-06-11 | 2022-10-18 | Asm Ip Holding B.V. | Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11482412B2 (en) | 2018-01-19 | 2022-10-25 | Asm Ip Holding B.V. | Method for depositing a gap-fill layer by plasma-assisted deposition |
US11482533B2 (en) | 2019-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Apparatus and methods for plug fill deposition in 3-D NAND applications |
US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
US11488854B2 (en) | 2020-03-11 | 2022-11-01 | Asm Ip Holding B.V. | Substrate handling device with adjustable joints |
US11488819B2 (en) | 2018-12-04 | 2022-11-01 | Asm Ip Holding B.V. | Method of cleaning substrate processing apparatus |
US11495459B2 (en) | 2019-09-04 | 2022-11-08 | Asm Ip Holding B.V. | Methods for selective deposition using a sacrificial capping layer |
US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US11499226B2 (en) | 2018-11-02 | 2022-11-15 | Asm Ip Holding B.V. | Substrate supporting unit and a substrate processing device including the same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
US11515188B2 (en) | 2019-05-16 | 2022-11-29 | Asm Ip Holding B.V. | Wafer boat handling device, vertical batch furnace and method |
US11515187B2 (en) | 2020-05-01 | 2022-11-29 | Asm Ip Holding B.V. | Fast FOUP swapping with a FOUP handler |
US11521851B2 (en) | 2020-02-03 | 2022-12-06 | Asm Ip Holding B.V. | Method of forming structures including a vanadium or indium layer |
US11527400B2 (en) | 2019-08-23 | 2022-12-13 | Asm Ip Holding B.V. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11530876B2 (en) | 2020-04-24 | 2022-12-20 | Asm Ip Holding B.V. | Vertical batch furnace assembly comprising a cooling gas supply |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US11530483B2 (en) | 2018-06-21 | 2022-12-20 | Asm Ip Holding B.V. | Substrate processing system |
US11551925B2 (en) | 2019-04-01 | 2023-01-10 | Asm Ip Holding B.V. | Method for manufacturing a semiconductor device |
US11551912B2 (en) | 2020-01-20 | 2023-01-10 | Asm Ip Holding B.V. | Method of forming thin film and method of modifying surface of thin film |
US11557474B2 (en) | 2019-07-29 | 2023-01-17 | Asm Ip Holding B.V. | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11594450B2 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Method for forming a structure with a hole |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
US11594600B2 (en) | 2019-11-05 | 2023-02-28 | Asm Ip Holding B.V. | Structures with doped semiconductor layers and methods and systems for forming same |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
US11605528B2 (en) | 2019-07-09 | 2023-03-14 | Asm Ip Holding B.V. | Plasma device using coaxial waveguide, and substrate treatment method |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
US11610775B2 (en) | 2016-07-28 | 2023-03-21 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
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-
1997
- 1997-12-16 JP JP9346695A patent/JPH11183265A/ja active Pending
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US11222772B2 (en) | 2016-12-14 | 2022-01-11 | Asm Ip Holding B.V. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
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USD903477S1 (en) | 2018-01-24 | 2020-12-01 | Asm Ip Holdings B.V. | Metal clamp |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
USD913980S1 (en) | 2018-02-01 | 2021-03-23 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
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US11482418B2 (en) | 2018-02-20 | 2022-10-25 | Asm Ip Holding B.V. | Substrate processing method and apparatus |
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US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
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US11837483B2 (en) | 2018-06-04 | 2023-12-05 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
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US11492703B2 (en) | 2018-06-27 | 2022-11-08 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
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US11168395B2 (en) | 2018-06-29 | 2021-11-09 | Asm Ip Holding B.V. | Temperature-controlled flange and reactor system including same |
US10914004B2 (en) | 2018-06-29 | 2021-02-09 | Asm Ip Holding B.V. | Thin-film deposition method and manufacturing method of semiconductor device |
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US10483099B1 (en) | 2018-07-26 | 2019-11-19 | Asm Ip Holding B.V. | Method for forming thermally stable organosilicon polymer film |
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US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
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US11804388B2 (en) | 2018-09-11 | 2023-10-31 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
US11885023B2 (en) | 2018-10-01 | 2024-01-30 | Asm Ip Holding B.V. | Substrate retaining apparatus, system including the apparatus, and method of using same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
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US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
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