JP4764241B2 - ドライエッチング方法 - Google Patents
ドライエッチング方法 Download PDFInfo
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- JP4764241B2 JP4764241B2 JP2006113133A JP2006113133A JP4764241B2 JP 4764241 B2 JP4764241 B2 JP 4764241B2 JP 2006113133 A JP2006113133 A JP 2006113133A JP 2006113133 A JP2006113133 A JP 2006113133A JP 4764241 B2 JP4764241 B2 JP 4764241B2
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- etching
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Claims (4)
- TiN膜の周囲にスペーサとなる窒化膜とその外側に層間絶縁膜を配置したウェハの前記TiN膜からなる金属膜に溝または穴の形成を行うドライエッチング方法において、
三塩化ホウ素(BCl3)と塩素(Cl2)を混合したガスを用いて、前記TiN膜をプラズマエッチングして任意の深さの溝または穴を形成する第1の工程と、
酸素(O2)と四フッ化メタン(CF4)を混合したガスを用いて、前記任意の深さまでプラズマエッチングされたTiN膜の深さを維持したまま、前記第1の工程により側壁部に残っているTiN膜を除去する第2の工程とを有することを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記第2の工程は、バイアス高周波電力を0Wにすることを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
前記第2の工程は、前記バイアス高周波電力を0Wにし、プラズマエッチング処理圧力を10〜200Paにし、前記四フッ化メタン(CF4)のガス流量を前記酸素(O 2 )と前記四フッ化メタン(CF 4 )の混合ガスに対して1〜2%にすることを特徴とするドライエッチング方法。 - 請求項1記載のドライエッチング方法において、
塩素ガス(Cl 2 )のみを用いて、前記第2の工程後に側壁部に残っていたTiN膜が除去された溝または穴をプラズマエッチングする第3の工程を有することを特徴とするドライエッチング方法。
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JP4764241B2 true JP4764241B2 (ja) | 2011-08-31 |
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