JP2008251826A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 77
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 144
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 144
- 229910052785 arsenic Inorganic materials 0.000 claims abstract description 135
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims abstract description 127
- 238000005530 etching Methods 0.000 claims abstract description 102
- 238000001312 dry etching Methods 0.000 claims abstract description 60
- 238000001039 wet etching Methods 0.000 claims abstract description 58
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 7
- 238000009792 diffusion process Methods 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 41
- 239000012535 impurity Substances 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 238000007667 floating Methods 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910021332 silicide Inorganic materials 0.000 claims 1
- 239000007795 chemical reaction product Substances 0.000 abstract description 16
- 239000002245 particle Substances 0.000 abstract description 16
- 238000011109 contamination Methods 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 246
- 230000008569 process Effects 0.000 description 39
- 238000002513 implantation Methods 0.000 description 33
- 229910052710 silicon Inorganic materials 0.000 description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 26
- 239000010703 silicon Substances 0.000 description 26
- 239000000243 solution Substances 0.000 description 26
- 210000004027 cell Anatomy 0.000 description 22
- 239000010409 thin film Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- -1 arsenic ions Chemical class 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 229910021341 titanium silicide Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 239000002344 surface layer Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 210000004899 c-terminal region Anatomy 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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Abstract
【解決手段】本発明の半導体装置の製造方法は、砒素が含まれている部分と砒素が含まれていない部分とを有するシリコン窒化膜を形成する工程と、ドライエッチングにより、前記シリコン窒化膜のうちの前記砒素が含まれている部分をエッチングする第1のエッチング工程と、ウェットエッチングにより、前記シリコン窒化膜のうちの前記砒素が含まれていない部分をエッチングする第2のエッチング工程と、を含む、ことを特徴とする
【選択図】図2
Description
Si3N4 + As → SixNyAsz (式1)
本発明は、半導体装置の製造工程において、上部に砒素が含まれたシリコン窒化膜を除去する場合に、ドライエッチングにより砒素が含まれる領域を除去する第1のエッチング工程とウェットエッチングにより残りの領域を除去する第2のエッチング工程とを組み合わせて、当該シリコン窒化膜をエッチングする技術に関する。そこで、本発明の実施の形態1では、シリコン窒化膜をマスクとして砒素の選択注入を行い、シリコン基板にN型拡散領域を形成する製造工程を例にあげて、本発明の概念について説明する。
次に、より具体的な例をあげて、本発明の内容を説明する。本発明の実施の形態2では、電気的に書き込み/消去が可能な不揮発性半導体記憶装置の一種であるスプリットゲート型不揮発性メモリ(split−gate nonvolatile memory)のメモリセルトランジスタの製造方法に関する例を取上げる。
続いて、本発明の実施の形態3では、特許文献1に開示されたシリサイド構造を有するMOSトランジスタの製造方法において、フィールド酸化膜(素子分離領域)に砒素イオンを導入する工程の後に不要となったシリコン窒化膜のマスクを除去する工程に対して、本発明を適用した例を説明する。
12、73 シリコン窒化膜
13 フォトレジスト
14、46 N型不純物拡散領域
32 ゲート絶縁膜
33 FG薄膜
34 フィールド絶縁膜
35 第1のフォトレジスト膜
36 素子分離領域STI
37 Pウエル
38 FGシリコン窒化膜
39 第2のフォトレジスト膜
40 P型不純物拡散領域
41 第1のHTO
42 スペーサ
43 第1のプラグ絶縁膜
44、60a 第1のソース/ドレイン拡散領域
45 プラグ
47 第2のプラグ絶縁膜
48、62 FG
48a、62a Tip部
49 トンネル絶縁膜
50 CG膜
51、61 CG
52 LDD領域
53 CG絶縁膜
54、60b 第2のソース/ドレイン拡散領域
72 シリコン酸化膜
74 レジスト
75 フィールド酸化膜
76 ゲート酸化膜
77 ポリシリコンゲート電極
78 サイドウォールスペーサ
79、81 レジストパターン
80 N+拡散層
82 P+拡散層
83 C54構造チタンシリサイド層
84 層間絶縁膜
85 アルミ配線
Claims (12)
- 砒素が含まれている部分と砒素が含まれていない部分とを有するシリコン窒化膜を形成する工程と、
ドライエッチングにより、前記シリコン窒化膜のうちの前記砒素が含まれている部分をエッチングする第1のエッチング工程と、
ウェットエッチングにより、前記シリコン窒化膜のうちの前記砒素が含まれていない部分をエッチングする第2のエッチング工程と、を含む、
ことを特徴とする半導体装置の製造方法。 - 前記シリコン窒化膜を形成する工程は、
開口を有する前記シリコン窒化膜で基板上を覆う工程と、
前記シリコン窒化膜をマスクとして前記砒素を注入する工程と、を有する、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記砒素の注入により、前記基板内に拡散領域を形成する、
ことを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記第2のエッチング工程の後、前記基板に対して熱処理を行なう工程をさらに含む、
ことを特徴とする請求項2又は3に記載の半導体装置の製造方法。 - 前記基板内に絶縁膜が選択的に形成されており、
前記開口は、前記絶縁膜に対応するように形成されている、
ことを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記ドライエッチングは、フッ素系のエッチングガスを用いて行われ、
前記ウェットエッチングは、燐酸液を用いて行われる、
ことを特徴とする請求項1乃至5のいずれか1に記載の半導体装置の製造方法。 - 半導体層上にゲート絶縁膜を介してフローティングゲート用の導電体層を形成する工程と、
開口を有するシリコン窒化膜をマスクにして前記導電体層を選択的に除去する工程と、
前記シリコン窒化膜をマスクとした第1の砒素の注入により、前記開口に対応する位置の前記半導体層に第1の拡散層を形成する工程と、
ドライエッチングにより、前記シリコン窒化膜における前記第1の砒素が含まれている領域を除去する第1のエッチング工程と、
ウェットエッチングにより、残りの前記シリコン窒化膜を除去する第2のエッチング工程と、を含む、
ことを特徴とする半導体装置の製造方法。 - 前記開口内の前記シリコン窒化膜の側壁にスペーサを形成する工程と、
前記スペーサをマスクとして前記ウェットエッチングより露出した前記導電体層を選択的に除去する工程と、をさらに含む、
ことを特徴とする請求項7に記載の半導体装置の製造方法。 - トンネル絶縁膜を介して前記導電体層に対向するようにコントロールゲートを形成する工程をさらに含む、
ことを特徴とする請求項8に記載の半導体装置の製造方法。 - 前記コントロールゲートをマスクとした不純物の注入により、前記半導体層に第2の拡散層を形成する工程をさらに含む、
ことを特徴とする請求項9に記載の半導体装置の製造方法。 - 前記第1の拡散層上にプラグを形成する工程と、
前記シリコン窒化膜をマスクとして前記プラグの上部に第2の砒素を注入する工程と、をさらに含む、
ことを特徴とする請求項7乃至10のいずれか1項に記載の半導体装置の製造方法。 - シリコン窒化膜で素子領域内の半導体基板上を覆う工程と、
素子分離絶縁膜で前記素子領域とは異なる領域内の前記半導体基板上を覆う工程と、
前記シリコン窒化膜をマスクとして前記素子分離絶縁膜に砒素を注入する工程と、
ドライエッチングにより、前記シリコン窒化膜の前記砒素が含まれている領域を除去する第1のエッチング工程と、
ウェットエッチングにより、残りの前記シリコン窒化膜を除去する第2のエッチング工程と、
前記素子領域内の前記半導体基板上にゲート絶縁膜を介してゲート電極を形成する工程と、
前記素子領域内の前記半導体基板中にソース及びドレインとなる不純物拡散領域を形成する工程と、
全面に、金属膜を形成する工程と、
熱処理により、前記不純物拡散領域の表面と前記金属膜とを反応させてシリサイドを形成する工程と、を含む、
ことを特徴とする半導体装置の製造方法。
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