TW202130846A - 形成包括釩或銦層的結構之方法 - Google Patents
形成包括釩或銦層的結構之方法 Download PDFInfo
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- TW202130846A TW202130846A TW110102274A TW110102274A TW202130846A TW 202130846 A TW202130846 A TW 202130846A TW 110102274 A TW110102274 A TW 110102274A TW 110102274 A TW110102274 A TW 110102274A TW 202130846 A TW202130846 A TW 202130846A
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- Prior art keywords
- vanadium
- indium
- layer
- reactant
- precursor
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- 229910052720 vanadium Inorganic materials 0.000 title claims abstract description 161
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 110
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 238000000034 method Methods 0.000 title claims abstract description 81
- 239000000376 reactant Substances 0.000 claims abstract description 86
- 238000006243 chemical reaction Methods 0.000 claims abstract description 66
- 239000002243 precursor Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000005137 deposition process Methods 0.000 claims abstract description 29
- 230000004888 barrier function Effects 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 64
- -1 vanadium halide Chemical class 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 54
- 239000007789 gas Substances 0.000 claims description 51
- 229910052757 nitrogen Inorganic materials 0.000 claims description 45
- 125000004122 cyclic group Chemical group 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 30
- 229910052799 carbon Inorganic materials 0.000 claims description 27
- 229910052717 sulfur Inorganic materials 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000011593 sulfur Substances 0.000 claims description 18
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 150000004820 halides Chemical class 0.000 claims description 5
- SKKMWRVAJNPLFY-UHFFFAOYSA-N azanylidynevanadium Chemical compound [V]#N SKKMWRVAJNPLFY-UHFFFAOYSA-N 0.000 claims description 3
- JZPXQBRKWFVPAE-UHFFFAOYSA-N cyclopentane;indium Chemical compound [In].[CH]1[CH][CH][CH][CH]1 JZPXQBRKWFVPAE-UHFFFAOYSA-N 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000002472 indium compounds Chemical class 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- JFLLBUCQAGGWFA-UHFFFAOYSA-N [O-2].[In+2] Chemical compound [O-2].[In+2] JFLLBUCQAGGWFA-UHFFFAOYSA-N 0.000 claims 1
- HJIYJLZFNBHCAN-UHFFFAOYSA-N [V].[C] Chemical compound [V].[C] HJIYJLZFNBHCAN-UHFFFAOYSA-N 0.000 claims 1
- IBYSTTGVDIFUAY-UHFFFAOYSA-N vanadium monoxide Chemical compound [V]=O IBYSTTGVDIFUAY-UHFFFAOYSA-N 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 17
- 230000005669 field effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 150
- 150000001875 compounds Chemical class 0.000 description 25
- 125000000217 alkyl group Chemical group 0.000 description 20
- 239000000126 substance Substances 0.000 description 19
- 239000003989 dielectric material Substances 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 17
- 229910052739 hydrogen Inorganic materials 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000003446 ligand Substances 0.000 description 15
- 239000011810 insulating material Substances 0.000 description 14
- 230000008021 deposition Effects 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 125000003118 aryl group Chemical group 0.000 description 12
- 239000000460 chlorine Substances 0.000 description 10
- 238000011010 flushing procedure Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- YNRRZINZEMMGJB-UHFFFAOYSA-N C1(C=CC=C1)[V] Chemical compound C1(C=CC=C1)[V] YNRRZINZEMMGJB-UHFFFAOYSA-N 0.000 description 5
- 229910052794 bromium Inorganic materials 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000007983 Tris buffer Substances 0.000 description 4
- ZWWCURLKEXEFQT-UHFFFAOYSA-N dinitrogen pentaoxide Chemical compound [O-][N+](=O)O[N+]([O-])=O ZWWCURLKEXEFQT-UHFFFAOYSA-N 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 150000003682 vanadium compounds Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910021552 Vanadium(IV) chloride Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 3
- JTJFQBNJBPPZRI-UHFFFAOYSA-J vanadium tetrachloride Chemical compound Cl[V](Cl)(Cl)Cl JTJFQBNJBPPZRI-UHFFFAOYSA-J 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- YHYKLKNNBYLTQY-UHFFFAOYSA-N 1,1-diphenylhydrazine Chemical compound C=1C=CC=CC=1N(N)C1=CC=CC=C1 YHYKLKNNBYLTQY-UHFFFAOYSA-N 0.000 description 2
- YBQZXXMEJHZYMB-UHFFFAOYSA-N 1,2-diphenylhydrazine Chemical compound C=1C=CC=CC=1NNC1=CC=CC=C1 YBQZXXMEJHZYMB-UHFFFAOYSA-N 0.000 description 2
- GVHUQXQVSWGYSH-UHFFFAOYSA-N 4-(3-bromophenyl)-2-methyl-1,3-thiazole Chemical compound S1C(C)=NC(C=2C=C(Br)C=CC=2)=C1 GVHUQXQVSWGYSH-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- LYDXIDCDSVRIBX-UHFFFAOYSA-N O(I)I.[V] Chemical compound O(I)I.[V] LYDXIDCDSVRIBX-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 229910021550 Vanadium Chloride Inorganic materials 0.000 description 2
- MBJAOHZZTCXJSK-UHFFFAOYSA-N [V].BrOBr Chemical compound [V].BrOBr MBJAOHZZTCXJSK-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000003877 atomic layer epitaxy Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 2
- XKLVLDXNZDIDKQ-UHFFFAOYSA-N butylhydrazine Chemical group CCCCNN XKLVLDXNZDIDKQ-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- ZHXZNKNQUHUIGN-UHFFFAOYSA-N chloro hypochlorite;vanadium Chemical compound [V].ClOCl ZHXZNKNQUHUIGN-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- KYMVBVBRCRFHIE-UHFFFAOYSA-N ethane-1,2-diimine Chemical compound N=CC=N KYMVBVBRCRFHIE-UHFFFAOYSA-N 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- CRFFKOZWRYKDEG-UHFFFAOYSA-N fluoro hypofluorite vanadium Chemical compound [V].FOF CRFFKOZWRYKDEG-UHFFFAOYSA-N 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 2
- RPESBQCJGHJMTK-UHFFFAOYSA-I pentachlorovanadium Chemical compound [Cl-].[Cl-].[Cl-].[Cl-].[Cl-].[V+5] RPESBQCJGHJMTK-UHFFFAOYSA-I 0.000 description 2
- NFVUDQKTAWONMJ-UHFFFAOYSA-I pentafluorovanadium Chemical compound [F-].[F-].[F-].[F-].[F-].[V+5] NFVUDQKTAWONMJ-UHFFFAOYSA-I 0.000 description 2
- YNZAFFFENDLJQG-UHFFFAOYSA-N pyrrol-1-amine Chemical compound NN1C=CC=C1 YNZAFFFENDLJQG-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 125000004213 tert-butoxy group Chemical group [H]C([H])([H])C(O*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- ZOYIPGHJSALYPY-UHFFFAOYSA-K vanadium(iii) bromide Chemical compound [V+3].[Br-].[Br-].[Br-] ZOYIPGHJSALYPY-UHFFFAOYSA-K 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FSJSYDFBTIVUFD-XHTSQIMGSA-N (e)-4-hydroxypent-3-en-2-one;oxovanadium Chemical compound [V]=O.C\C(O)=C/C(C)=O.C\C(O)=C/C(C)=O FSJSYDFBTIVUFD-XHTSQIMGSA-N 0.000 description 1
- MFWFDRBPQDXFRC-LNTINUHCSA-N (z)-4-hydroxypent-3-en-2-one;vanadium Chemical compound [V].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O MFWFDRBPQDXFRC-LNTINUHCSA-N 0.000 description 1
- FDZVJAHIBXZLCP-UHFFFAOYSA-N 1,1,1,5,5,5-hexafluoropentane-2,3-dione Chemical compound FC(F)(F)CC(=O)C(=O)C(F)(F)F FDZVJAHIBXZLCP-UHFFFAOYSA-N 0.000 description 1
- IFZHGQSUNAKKSN-UHFFFAOYSA-N 1,1-diethylhydrazine Chemical compound CCN(N)CC IFZHGQSUNAKKSN-UHFFFAOYSA-N 0.000 description 1
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- IFARRRGGHHADCF-UHFFFAOYSA-N 1-ethyl-1-(4-methylphenyl)hydrazine Chemical compound CCN(N)C1=CC=C(C)C=C1 IFARRRGGHHADCF-UHFFFAOYSA-N 0.000 description 1
- ZFSFKYIBIOKXKI-UHFFFAOYSA-N 1-ethyl-1-methylhydrazine Chemical compound CCN(C)N ZFSFKYIBIOKXKI-UHFFFAOYSA-N 0.000 description 1
- NQSIARGGPGHMCG-UHFFFAOYSA-N 1-ethyl-1-phenylhydrazine Chemical compound CCN(N)C1=CC=CC=C1 NQSIARGGPGHMCG-UHFFFAOYSA-N 0.000 description 1
- MSWVMWGCNZQPIA-UHFFFAOYSA-N 1-fluoropropan-2-one Chemical compound CC(=O)CF MSWVMWGCNZQPIA-UHFFFAOYSA-N 0.000 description 1
- ABANUKHECQXXRH-UHFFFAOYSA-N 1-methyl-1-(3-methylphenyl)hydrazine Chemical compound CN(N)C1=CC=CC(C)=C1 ABANUKHECQXXRH-UHFFFAOYSA-N 0.000 description 1
- MWOODERJGVWYJE-UHFFFAOYSA-N 1-methyl-1-phenylhydrazine Chemical compound CN(N)C1=CC=CC=C1 MWOODERJGVWYJE-UHFFFAOYSA-N 0.000 description 1
- UAHWWAIVYPJROV-UHFFFAOYSA-N 2,6-dimethylpiperidin-1-amine Chemical compound CC1CCCC(C)N1N UAHWWAIVYPJROV-UHFFFAOYSA-N 0.000 description 1
- OQMROOTVLOXIJH-UHFFFAOYSA-N 3,4-dihydro-2h-quinolin-1-amine Chemical compound C1=CC=C2N(N)CCCC2=C1 OQMROOTVLOXIJH-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JORGNPOWVUQTRB-UHFFFAOYSA-J CC(N[V](NC(C)=O)(NC(C)=O)NC(C)=O)=O Chemical compound CC(N[V](NC(C)=O)(NC(C)=O)NC(C)=O)=O JORGNPOWVUQTRB-UHFFFAOYSA-J 0.000 description 1
- BCQBSPAQJDINFH-UHFFFAOYSA-N CC1=C(C(=C(C1([In])C)C)C)C Chemical compound CC1=C(C(=C(C1([In])C)C)C)C BCQBSPAQJDINFH-UHFFFAOYSA-N 0.000 description 1
- HGPVYHZTASOLBF-UHFFFAOYSA-N CCC1(C=CC=C1)[In] Chemical compound CCC1(C=CC=C1)[In] HGPVYHZTASOLBF-UHFFFAOYSA-N 0.000 description 1
- PTIYVPNUBVBVES-UHFFFAOYSA-K Cl[V](Cl)(Cl)C1C=CC=C1 Chemical compound Cl[V](Cl)(Cl)C1C=CC=C1 PTIYVPNUBVBVES-UHFFFAOYSA-K 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- 229910004129 HfSiO Inorganic materials 0.000 description 1
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- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 150000003973 alkyl amines Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001540 azides Chemical class 0.000 description 1
- RLFFLEZFARXFQF-UHFFFAOYSA-N aziridin-1-amine Chemical compound NN1CC1 RLFFLEZFARXFQF-UHFFFAOYSA-N 0.000 description 1
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- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 229910010277 boron hydride Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- VPKDCDLSJZCGKE-UHFFFAOYSA-N carbodiimide group Chemical group N=C=N VPKDCDLSJZCGKE-UHFFFAOYSA-N 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
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- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- YXQWGVLNDXNSJJ-UHFFFAOYSA-N cyclopenta-1,3-diene;vanadium(2+) Chemical compound [V+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 YXQWGVLNDXNSJJ-UHFFFAOYSA-N 0.000 description 1
- CFTPQBADCNYKCN-UHFFFAOYSA-L cyclopenta-1,3-diene;vanadium(4+);dichloride Chemical compound [Cl-].[Cl-].[V+4].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 CFTPQBADCNYKCN-UHFFFAOYSA-L 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical class [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- GKCPCPKXFGQXGS-UHFFFAOYSA-N ditert-butyldiazene Chemical compound CC(C)(C)N=NC(C)(C)C GKCPCPKXFGQXGS-UHFFFAOYSA-N 0.000 description 1
- ZFCJLQRNVAABBF-UHFFFAOYSA-N ethanolate vanadium(4+) Chemical compound [V+4].CC[O-].CC[O-].CC[O-].CC[O-] ZFCJLQRNVAABBF-UHFFFAOYSA-N 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
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- PHLVLJOQVQPFAW-UHFFFAOYSA-N tris(2-methylpropyl)indigane Chemical compound CC(C)C[In](CC(C)C)CC(C)C PHLVLJOQVQPFAW-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- JBIQAPKSNFTACH-UHFFFAOYSA-K vanadium oxytrichloride Chemical compound Cl[V](Cl)(Cl)=O JBIQAPKSNFTACH-UHFFFAOYSA-K 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
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Abstract
所揭示者係用於將釩及/或銦層沉積至基材表面上之方法及系統以及使用上述方法形成之結構及裝置。例示性方法包括使用循環沉積製程、將釩及/或銦層沉積至基材表面上。循環沉積製程可包括提供釩及/或銦前驅物至反應室及分開地提供反應物至反應室。循環沉積製程依所欲可係熱循環沉積製程。例示性結構可包括場效電晶體結構(諸如環繞式閘極結構)。釩及/或銦層可例如用作障壁層或襯墊、用作功函數層、用作偶極移位器層或類似者。
Description
本揭露大致上係關於適於在基材表面上形成層之方法及系統,並關於包括上述層之結構。更具體地,本揭露係關於用於形成包括釩及/或銦的層之方法及系統,並關於使用上述方法及系統形成之結構。
半導體裝置(諸如,例如互補式金氧半導體(complementary metal-oxide-semiconductor, CMOS)裝置)之縮放已導致積體電路之速度及密度的顯著改善。然而,習知的裝置縮放技術對未來技術節點而言面對重大的挑戰。
例如,一直存在的一個挑戰在於找出適於用作CMOS裝置中之閘極電極的導電材料。CMOS裝置習知地使用n型摻雜多晶矽作為閘極電極材料。然而,摻雜多晶矽可能不是用於先進節點應用的理想閘極電極材料。雖然摻雜多晶矽係導電的,但仍可能存在於偏壓條件下可能耗乏載子之表面區域。此區域可看來像是外加的閘極絕緣體厚度(通常稱為閘極耗乏),並可貢獻等效的氧化物厚度。雖然閘極空乏區可係薄的(大約數埃(Å)),但隨著先進節點應用中閘極氧化物厚度的減少,閘極耗乏區可能變得顯著。作為一進一步實例,多晶矽並未針對NMOS及PMOS兩種裝置展現理想的有效功函數(eWF)。欲克服摻雜多晶矽之非理想的有效功函數,可利用臨限電壓調整植入。然而,隨著先進節點應用中之裝置幾何的減少,臨限電壓調整植入製程可能會逐漸變得複雜且不切實際。
欲克服與摻雜多晶矽閘極電極相關聯的問題,可使用替代材料(諸如,例如金屬,諸如氮化鈦層)來取代多晶矽閘極材料。氮化鈦層可為CMOS應用提供更理想的有效功函數。然而,在所欲功函數值高於以氮化鈦層取得的值之一些情況下(例如在CMOS裝置的PMOS區域中),所欲的係用於閘極電極之改善材料。此類材料亦可適於其他應用(諸如臨限電壓調諧或作為p型偶極移位器)。此外,亦為所欲的係用於應用(諸如擴散障壁或襯墊(例如用於後段(back-end-of-line, BEOL)處理)、蝕刻止擋層、電極、及類似者)的改善層。
本節提出之任何討論(包括問題及解決方案的討論)僅為了提供本揭露背景脈絡之目的而包括在本揭露中。此類討論不應視為承認資訊之任何或全部內容在完成本發明時已知或以其他方式構成先前技術。
本發明內容可用簡化形式介紹選取的概念,其可於下文以進一步細節描述。本發明內容並非意欲必然地鑑別所主張之主題的關鍵特徵或基本特徵,亦非意欲用以限制所主張之主題的範疇。
本揭露之各種實施例係關於形成包括釩及/或銦層的結構之方法,關於使用此類方法所形成之結構及裝置,且關於用於進行上述方法及/或用於形成上述結構及/或裝置之設備。釩及/或銦層可用在各種應用中,包括閘極金屬堆疊層、邏輯(例如DRAM)電極層應用(例如作為電極層)、作為蝕刻止擋層(在前段(FEOL)、中段(MEOL)、及/或後段(BEOL)處理中)、及/或作為擴散障壁層或襯墊(例如用於FEOL、BEOL、及/或MEOL應用)。舉具體實例而言,釩及/或銦層可用作功函數調整層、電壓臨限調整層、作為(例如p型)偶極或平帶移位器層、在FEOL、MEOL、及/或BEOL處理中作為蝕刻止擋層及/或作為擴散層或襯墊、及類似者。
根據本揭露之例示性實施例,揭示一種形成結構之方法。形成上述結構之例示性方法包括在反應器之反應室內提供基材;及使用循環沉積製程將釩或銦層沉積至基材之表面上。循環沉積製程可包括(例如,循序地及分開地)提供釩及/或銦前驅物至反應室及提供反應物至反應室。釩前驅物可包括例如下列之一或多者:鹵化釩、及氧鹵化釩、β二酮基釩化合物、環戊二烯基釩化合物、釩醇鹽化合物、二烷基醯胺基釩化合物、釩脒鹽化合物、釩「異配位」或混合配體化合物、或DAD型配體化合物(其中DAD可由1,4‐二氮雜‐1,3‐丁二烯(RN=CR’CR’=NR,R=烷基、芳基,R’=H、烷基)表示)或類似者。鹵化釩前驅物可選自由氟化釩、氯化釩、溴化釩、碘化釩、及類似者組成之群組。氧鹵化釩可選自由氧氟化釩、氧氯化釩、氧溴化釩、氧碘化釩、及類似者組成之群組。銦前驅物可包括下列之一或多者:烷基銦化合物、環戊二烯基銦化合物、β二酮基銦化合物、銦醋酸鹽化合物或類似者。反應物可包括下列之一或多者:氧反應物、氮反應物、硫反應物、及碳反應物。例示性氧反應物包括水、臭氧、過氧化氫(H2
O2
)、氧(O2
)、氧化亞氮(N2
O)、五氧化二氮(N2
O5
)、及類似者。例示性氮反應物可選自下列之一或多者:胺,諸如NH3
、具有式NR3
的烷基胺,其中R係獨立地下列之任何者:H、Me、Et、iPr、tBu、Ph、Bz、SiMe3、Cy、以及其他典型的烷基、芳基、或矽基取代基;肼,諸如N2
H4
、tBuNHNH2
、Me2
NNH2
、以及具有式R2
NNR2
的其他肼共反應物,其中各R係例如獨立地下列中之一者:H、Me、Et、iPr、tBu、Ph、Bz、SiMe3、Cy、以及其他典型的烷基、芳基、或矽基取代基;疊氮,諸如HN3
、(SiMe3
)N3
、RN3
,其中R係任何常見的烷基或芳基;或其他化合物,諸如其尿素及烷基變體、具有式RN=C=NR的碳二醯亞胺基,其中R係任何常見的烷基或芳基、胍及其常見的烷基或芳基衍生物、腙及其常見的烷基或芳基衍生物;或其他含氮及含氫氣體(例如氮氣及氫氣的混合物)及類似者。
例示性硫反應物包括硫化氫(H2
S)、硫(例如S8
)、鹵化硫、硫醇(例如烷基及芳基硫醇)、包括二硫化物鍵的化合物、包括硫-烷基鍵的化合物、及由式R-S-S-R’表示的化合物,其中R及R’係獨立地選自脂基(例如C1至C8)及芳香基。例示性碳反應物包括乙炔、乙烯、烷基鹵化物化合物、烯烴鹵化物化合物、金屬烷基化合物、及類似者。除了提供一或多個前驅物及一或多個反應物至反應室以外,含氫前驅物或反應物可流至反應室。在一些情況下,咸認為添加含氫前驅物及/或反應物致能具有更多所欲性質的膜之形成。
循環沉積製程可包括原子層沉積製程及循環化學氣相沉積製程之一或多者。循環沉積製程可包括熱製程,亦即,不使用電漿活化物種的製程。在一些情況下,反應物可暴露至電漿以形成活化反應物物種。
根據本揭露之尚有進一步的例示性實施例,一種結構係使用如本文所述之方法形成。上述結構可包括基材及形成為上覆於基材之表面的釩及/或銦層。例示性結構可進一步包括一或多個額外層(諸如上覆於釩及/或銦層的額外金屬或導電層及/或釩及/或銦層下方或上覆於釩及/或銦層之一或多個絕緣或介電層)。上述結構可係或可形成CMOS結構(諸如PMOS及NMOS結構之一或多者)或其他裝置結構的部分。
根據本揭露之尚有額外的實施例,一種裝置或其部分可使用如本文所述之方法及/或結構形成。上述裝置可包括基材、絕緣或介電層、上覆於絕緣或介電層的釩及/或銦層、及上覆於釩及/或銦層之可選的額外金屬層。上述裝置可係或可形成例如CMOS裝置的部分。
根據本揭露之尚有額外的實例,揭示一種用以執行如本文所述之方法及/或用以形成結構、裝置、或任一者之部分的系統。
所屬技術領域中具有通常知識者將從已參照隨附圖式之某些實施例的下列詳細描述輕易明白這些及其他實施例。本發明並未受限於任何所揭示具體實施例。
下文所提供之方法、結構、裝置、及系統之例示性實施例的描述僅係例示性且僅係意欲用於說明之目的;下列描述並非意欲限制本揭露或申請專利範圍之範疇。此外,列舉具有所陳述特徵之多個實施例不意欲排除具有額外特徵之其他實施例或納入所陳述特徵之不同組合的其他實施例。例如,各種實施例係提出作為例示性實施例,並可列舉於附屬項中。除非另有註明,例示性實施例或其等之組件可組合或可彼此分開應用。
如下文更詳細提出,本揭露之各種實施例提供用於形成適於各種應用之結構及/或裝置之方法。例示性方法可用以例如形成閘極電極及/或形成適於金氧半導體(MOS)應用的釩及/或銦層(例如作為功函數層及/或偶極或平帶移位器),諸如在形成互補MOS (CMOS)裝置的過程中用作蝕刻止擋層及/或用作障壁或襯墊層(例如在FEOL、MEOL、及BEOL處理中)。例如,釩及/或銦層可用於形成邏輯裝置、動態隨機存取記憶體(DRAM)、三維NAND裝置、作為邏輯裝置的p型金屬層閘極、作為用於邏輯裝置的p型偶極層及類似者。然而,除非另有註明,本發明不必然受限於此類實例。
在本揭露中,「氣體(gas)」可包括在常溫及常壓(NTP)下為氣體之材料、汽化固體、及/或汽化液體,並可取決於上下文由單一氣體或氣體混合物構成。除了製程氣體以外的氣體(亦即,未通過氣體分配總成、其他氣體分配裝置或類似者而引入的氣體)可用於例如密封反應空間,且可包括諸如稀有氣體的密封氣體。在一些情況下,用語「前驅物(precursor)」可指參與生成另一化合物的化學反應之化合物,且具體係指構成膜基質或膜的主要骨架之化合物;用語「反應物(reactant)」可與用語前驅物互換地使用。用語「惰性氣體(inert gas)」可指不參與化學反應及/或不會在可察覺的程度上變為膜基質之一部分的氣體。例示性的惰性氣體包括氦、氬、及其等之任何組合。在一些情況下,惰性氣體可包括氮及/或氫。
如本文所使用,用語「基材(substrate)」可指可用以形成或在其上可形成裝置、電路、或膜之任何(多個)下伏材料。基材可包括塊材(諸如矽(例如單晶矽))、其他IV族材料(諸如鍺)、或其他半導體材料(諸如II-VI族或III-V族半導體材料),並可包括上覆或下伏於塊材的一或多層。進一步地,基材可包括各種特徵,諸如形成在基材之一層的至少一部分之內或之上的凹部、突起部、及類似者。舉實例而言,一基材可包括塊材半導體材料及上覆於該塊材半導體材料之至少一部分的一絕緣或介電材料層。
如本文所使用,用語「膜(film)」及/或「層(layer)」可指任何連續或不連續的結構及材料,諸如,藉由本文所揭示之方法沉積之材料。例如,膜及/或層可包括二維材料、三維材料、奈米粒子,或甚至是部分或完整分子層、或部分或完整原子層或原子及/或分子團簇。膜或層可包含具有針孔的材料或層,其可係至少部分連續的。
如本文所使用,「結構(structure)」可係或可包括如本文所述之基材。結構可包括上覆於基材之一或多個層(諸如,根據本文所述之方法形成的一或多個層)。沉積部分可係或可包括結構。
用語「循環沉積製程(cyclic deposition process/cyclical deposition process)」可指將前驅物(及/或反應物)循序引入反應室中以在基材上方沉積層,並包括處理技術(諸如原子層沉積(ALD)、循環化學氣相沉積(循環CVD)、及包括ALD配置及循環CVD配置之混合式循環沉積製程)。
用語「原子層沉積(atomic layer deposition)」可指氣相沉積製程,其中沉積循環(一般係複數個接續的沉積循環)係在製程室中實施。當使用(多個)前驅物/(多個)反應性氣體及(多個)沖洗(例如惰性載體)氣體的交替脈衝執行時,如本文中所使用之用語原子層沉積亦意指包括由相關用語指定的製程,諸如化學氣相原子層沉積、原子層磊晶(ALE)、分子束磊晶(MBE)、氣體源MBE、或有機金屬MBE、及化學束磊晶。
通常,對ALD製程而言,在各循環期間,前驅物係引入反應室且經化學吸附至沉積表面(例如,可包括來自先前ALD循環之先前經沉積材料或其他材料的基材表面),並形成不易與額外前驅物起反應(亦即,自限式反應)的材料單層或次單層。其後,在一些情況下,可隨後將反應物(例如,另一前驅物或反應氣體)引入至製程室中,以用於在沉積表面上將經化學吸附之前驅物轉化為所欲材料。反應物能夠進一步與前驅物起反應。可在一或多個循環期間(例如在各循環之各步驟期間)利用沖洗步驟來從製程室移除任何過量前驅物及/或從反應室移除任何過量反應物及/或反應副產物。
如本文中所使用,「釩層(vanadium layer)」或「包括釩的層(a layer including vanadium)」可係可由包括釩之化學式表示的材料層。釩層可包括氧、氮、硫、及碳之一或多者(例如釩碳氮層)。例如,釩層可係二元化合物,其包括釩及另一元素(諸如C、N、O、S);或三元化合物,其包含釩及二或更多個其他元素(諸如C、N、O、S之二或更多者)。用於釩層材料的化學式可由Mx
Xy
Za
表示,其中M係釩,且X可係C、N、O、S,且Z可係C、N、O、S,且其中x係大於0並小於一,且y及a的範圍可從0至小於1。舉具體實例而言,釩層可包括氮及約4 at%至約8 at%的碳。
如本文中所使用,「銦層(indium layer)」或「包括銦的層(a layer including indium)」可係可由包括銦之化學式表示的材料層。銦層可包括氧、氮、硫、及碳之一或多者。例如,銦層可係二元化合物,其包括銦及另一元素(諸如C、N、O、S);或三元化合物,其包含銦及二或更多個其他元素(諸如C、N、O、S之二或更多者)。用於銦層材料的化學式可由Mx
Xy
Za
表示,其中M係銦,且X可係C、N、O、S,且Z可係C、N、O、S,且其中x係大於0並小於一,且y及a的範圍可從0至小於1。
如本文中所使用,「釩前驅物」包括氣體或材料,其可變為氣態且其可由包括釩的化學式表示。
如本文中所使用,「銦前驅物」包括氣體或材料,其可變為氣態且其可由包括銦的化學式表示。
如本文中所使用,「鹵化釩前驅物(vanadium halide precursor)」包括氣體或材料,其可變為氣態且其可由包括釩及鹵素(諸如氟(F)、氯(Cl)、溴(Br)、及碘(I)之一或多者)的化學式表示。
用語「氧前驅物(oxygen precursor)」可指氣體或材料,其可變為氣態且其可由包括氧的化學式表示。在一些情況下,化學式包括氧及氫。在一些情況下,氧反應物不包括雙原子氧。
用語「氮反應物(nitrogen reactant)」可指氣體或材料,其可變為氣態且其可由包括氮的化學式表示。在一些情況下,化學式包括氮及氫。在一些情況下,氮反應物不包括雙原子氮。
用語「硫反應物(nitrogen reactant)」可指氣體或材料,其可變為氣態且其可由包括硫的化學式表示。在一些情況下,化學式包括硫及氫。在一些情況下,硫反應物不包括原子硫。
用語「碳反應物(nitrogen reactant)」可指氣體或材料,其可變為氣態且其可由包括碳的化學式表示。在一些情況下,化學式包括碳及氫。
用語「氫反應物(nitrogen reactant)」可指氣體或材料,其可變為氣態且其可由包括氫的化學式表示。
進一步地,在本揭露中,變數之任兩個數字可構成變數之可工作範圍,且所指示之任何範圍可包括或排除端點。額外地,所指示的變數之任何數值(不管該等數值是否以「約」來指示)可指精確值或近似值並包括等效值,且可指平均值、中間值、代表值、多數值或類似者。進一步地,在本揭露中,於一些實施例中,用語「包括(including)」、「由……構成(constituted by)」、及「具有(having)」係獨立地指「一般或廣泛地包含(typically or broadly comprising)」、「包含(comprising)」、「基本上由……組成(consisting essentially of)」、或「由……組成(consisting of)」。在本揭露中,於一些實施例中,任何已定義之意義不必然排除尋常及慣例意義。
現轉向圖式,圖1繪示根據本揭露之例示性實施例之方法100。方法100可用以例如形成包括釩及/或銦層的結構。可在裝置(諸如本文所提及的裝置)之形成期間使用釩及/或銦層。然而,除非另有註明,方法並未受限於此類應用。
方法100包括下列步驟:在反應器之反應室內提供基材(步驟102);及使用循環沉積製程將包含釩及銦之一或多者的層沉積至基材表面上(步驟104)。
在步驟102期間,於反應室內提供基材。步驟102期間所用的反應室可係或可包括化學氣相沉積反應器系統的反應室,其經組態以執行循環沉積製程。反應室可係獨立反應室或叢集工具的部分。
步驟102可包括在反應室內將基材加熱至所欲的沉積溫度。在本揭露之一些實施例中,步驟102包括將基材加熱至小於800 °C的溫度。例如,在本揭露之一些實施例中,將基材加熱至沉積溫度可包含將基材加熱至介於大約20 °C與大約800 °C、約100 °C與約400 °C、約20 °C與約300 °C、或約20 °C與約200 °C之間的溫度。
除了控制基材溫度以外,亦可調節反應室內的壓力。例如,在本揭露之一些實施例中,步驟102期間之反應室內的壓力可小於760 Torr、或介於0.2 Torr與760 Torr、約1 Torr與100 Torr、或約1 Torr與10 Torr之間。
在步驟104期間,釩及/或銦層係使用循環沉積製程沉積至基材表面上。如上文所提及,循環沉積製程可包括循環CVD、ALD、或混合式循環CVD/ALD製程。舉例而言,在一些實施例中,特定ALD製程之生長率與CVD製程相較可係低的。一個增加生長率的方法可在於以高於一般ALD製程中所用的沉積溫度進行操作,產生某一部分的化學氣相沉積製程,但仍利用循序引入反應物。此一製程可稱為循環CVD。在一些實施例中,循環CVD製程可包含將二或更多個反應物引入反應室中,其中在反應室中之二或多個反應物之間可存在重疊的時間段,生成沉積的ALD配置及沉積的CVD配置兩者。此係稱為混合式製程。根據進一步的實例,循環沉積製程可包含一個反應物/前驅物的連續流及第二反應物至反應室中之週期性脈衝。
根據本揭露之一些實例,循環沉積製程係熱沉積製程。在此等情況下,循環沉積製程不包括使用電漿以形成用於循環沉積製程中的活化物種。例如,循環沉積製程可不包含氧、氮、硫、或碳電漿之形成或使用、可不包含激發氧、氮、硫、或碳物種之形成或使用、及/或可不包含氧、氮、硫、或碳自由基之形成或使用。
循環沉積製程可包括(例如分開地及循序地)提供釩及/或銦前驅物至反應室及提供反應物至反應室。在一些情況下,氫反應物可隨釩及/或銦前驅物及/或隨另一反應物提供至反應室。釩及/或銦前驅物可包括鹵化物及氧鹵化物、有機金屬化合物、金屬有機化合物或類似者之一或多者。釩前驅物可包括例如下列之一或多者:鹵化釩及氧鹵化釩、β二酮基釩化合物、環戊二烯基釩化合物、釩醇鹽化合物、二烷基醯胺基釩化合物、釩脒鹽化合物、釩「異配位」或混合配體化合物(其包括例如本文所述之配體的任何組合)、或DAD型配體化合物(其中DAD可由1,4‐二氮雜‐1,3‐丁二烯(RN=CR’CR’=NR,R=烷基、芳基,R’=H、烷基)表示)或類似者。
舉具體實例而言,鹵化釩可選自氟化釩、氯化釩、溴化釩、及碘化釩之一或多者。鹵化釩可僅包括釩及一或多個鹵素(例如四氯化釩或類似者)。氧鹵化釩可選自氧鹵化釩之一或多者,諸如氧氟化釩、氧氯化釩、氧溴化釩及氧碘化釩之一或多者。氧鹵化釩可僅包括釩、氧、及一或多個鹵化物。舉實例而言,鹵化釩及氧鹵化釩可選自包括溴、氯、及碘之一或多者的化合物,並包括VCl4
、VBr4
、VI4
、VOCl3
、VOBr3
、VOI3
(分別名為四氯化釩、四溴化釩、四碘化釩、氧三氯化釩、氧三溴化釩、及氧三碘化釩)之一或多者。
例示性β二酮基釩化合物包括VO(acac)2
、VO(thd)2
、V(acac)3
、V(thd)3
(分別名為氧代雙(2,4-戊二酮基)釩(IV)、氧代雙(2,2,6,6-四甲基-3,5-庚二酮基)釩(IV)、三(2,4-戊二酮基)釩(IV)、及三(2,2,6,6-四甲基-3,5-庚二酮基)釩(IV))、及/或VO(hfac)2
、或V(hfac)3
,其中hfac係六氟乙醯丙酮配體及類似者。
例示性環戊二烯基釩化合物包括VCp2
Cl2
、VCp2
、VCp2
(CO)4
、及VCpCl3
(分別名為雙氯雙(環戊二烯基)釩(IV)、雙(環戊二烯基)釩(II)、四羰環戊二烯基釩、及三氯(環戊二烯基)釩(IV))。額外的例示性環戊二烯基釩化合物包括這些化合物的變體,其中Cp係未經取代或承載一或多個烷基(例如MeCp、EtCp、iPrCp及類似者)。
例示性釩醇鹽化合物包括V(OMe)4
、V(OEt)4
、V(OiPr)4
、V(OtBu)4
、VO(OMe)3
、VO(OEt)3
、VO(OiPr)3
、及VO(OtBu)3
(分別名為四(甲氧基)釩(IV)、四(乙氧基)釩(IV)、四(異丙氧基)釩(IV)、四(第三丁氧基)釩(IV)、氧代三(甲氧基)釩(IV)、氧代三(乙氧基)釩(IV)、氧代三(異丙氧基)釩(IV)、及氧代三(第三丁氧基)釩(IV))。額外的釩醇鹽化合物包括這些化合物的變體,其中使用其他烷氧基配體。
例示性二烷基醯胺基釩化合物包括V(NMe2
)4
、V(NEt2
)4
、及V(NEtMe)4
(分別名為四(二甲醯胺基)釩(IV)、四(二乙醯胺基)釩(IV)、及四(乙甲醯胺基)釩(IV))。
例示性脒鹽化合物包括V(iPrFMD)3
、V(iPrAMD)3
、V(tBuFMD)3
、及V(tBuAMD)3
,其中iPrFMD係N,N’‐二異丙基甲脒基配體,iPrAMD係N,N’‐二異丙基乙脒基配體,tBuFMD係N,N’‐二‐第三‐丁基甲脒基配體,且tBuAMD係N,N’‐二‐第三‐丁基乙脒基配體。
包括DAD配體之前驅物的實例包括V(DAD)2
、V(DAD)(CO)4
、VCp(DAD)(CO)2
、V(DAD)Cl3
、及V(DAD)2
(NO)2
,其中DAD係1,4‐二氮雜‐1,3‐丁二烯(RN=CR’CR’=NR,其中R=烷基或芳基且R’=H或烷基)。
進一步地,例示性釩前驅物可包括「異配位」或混合配體前驅物,其中任何可得數目(一般3至5配體,但可存在例外)之例示性配體類型之任何組合可附接至釩原子。實例可包括V(Cl)x
(NMe)4 ‐ x
及V(Cl)x
(iPrAMD)x
。
相對於使用其他前驅物(諸如釩金屬有機前驅物)之方法,使用鹵化釩前驅物可係有利的,因為鹵化釩前驅物可相對便宜,可得出具有較低雜質(諸如碳)濃度的釩層;及/或相較於使用金屬有機或其他釩前驅物的製程,使用此類前驅物的製程可更加受控。進一步地,可在無電漿輔助以形成激發物種的情況下使用此類反應物。此外,相較於使用有機金屬釩前驅物之方法,使用鹵化釩的製程可更容易放大規模。
例示性烷基銦化合物包括InMe3
、InEt3
、In(iPr)3
、In(iBu)3
、或In(tBu)3
(分別名為三甲基銦、三乙基銦、三異丁基銦、或三-第三-丁基銦)。
例示性銦環戊二烯基化合物包括InCp、In(MeCp)、In(EtCp)、及In(Me5
Cp)(分別名為(環戊二烯基)銦、(甲基環戊二烯基)銦、(乙基環戊二烯基)銦、及(五甲基環戊二烯基)銦)。
例示性β二酮基銦化合物包括In(acac)3
、In(thd)3
、In(hfac)3
、及In(tfac)3
(分別名為三(2,4-戊二酮基)銦(III)、三(2,2,6,6-四甲基-3,5-庚二酮基)銦(III)、三(1,1,1,5,5,5-六氟戊二酮基)銦(III)、及三(1,1,1-三氟戊二酮基)銦(III))。
例示性銦醋酸鹽化合物包括In(CO2
CH3
)3
及In(CO2
CF3
)3
(分別名為三(乙酸)銦(III)及三(三氟乙酸)銦(III))。
例示性氧反應物包括水、臭氧、過氧化氫(H2
O2
)、氧(O2
)、氧化亞氮(N2
O)、五氧化二氮(N2
O5
)及類似者。在一些情況下,氧反應物不包括雙原子氧。
例示性氮反應物可選自氨(NH3
)、肼(N2
H4
)、其他含氮及氫之氣體(例如氮氣及氫氣之混合物)及類似者之一或多者。氮反應物可包括氮及氫或者由氮及氫組成。在一些情況下,氮反應物不包括雙原子氮。在一些情況下,氮反應物可包括碳及氮。包括碳及氮的反應物可促成非晶膜的形成,其可促成所形成的膜具有所欲的結構(例如微晶或非晶)抗性、功函數、成核、膜封閉性、及/或擴散性質(或與上述之所欲的抵換關係)。烷基肼可提供碳及氮兩者。此外,烷基肼的高反應性可允許較低的沉積溫度,其除了將碳加至沉積膜以外,可促成更非晶的層之形成,其可使此類層對擴散更具抗性(較佳的障壁層)及/或導致層的較佳封閉性。例示性烷基肼包括第三丁基肼(C4
H9
N2
H3
)、甲基肼(CH3
NHNH2
)、1,1-二甲基肼((CH3
)2
N2
H2
)、1,2-二甲基肼、乙基肼、1,1-二乙基肼、1-乙基-1-甲基肼、異丙基肼、苯基肼、1,1-二苯基肼、1,2-二苯基肼、N-胺基哌啶、N-胺基吡咯、N-胺基吡咯啶、N-甲基-N-苯基肼、1-胺基-1,2,3,4-四氫喹啉、N-胺基哌嗪、1,1-二苯基肼、1,2-二苯基肼、1-乙基-1-苯基肼、1-胺基吖口半、1-甲基-1-(間甲苯基)肼、1-乙基-1-(對甲苯基)肼、1-胺基咪唑、1-胺基-2,6-二甲基哌啶、N-胺基氮丙啶、及偶氮基-第三丁烷。
例示性硫反應物包括硫化氫(H2
S)、硫(例如S8
)、硫醇(例如烷基及芳基硫醇)、包括二硫化物鍵的化合物、包括硫-烷基鍵的化合物、及由式R-S-S-R’或S-R表示的化合物(其中R及R’係獨立地選自脂基(例如C1至C8)及芳香基)、鹵化硫(例如包括一個硫(諸如SCl2
或SBr2
)或一個鹵化物(諸如二氯化二硫))。烷基硫醇可包括C1至C8烷基硫醇。
例示性碳反應物包括乙炔、乙烯、烷基鹵化物化合物、烯烴鹵化物化合物、金屬烷基化合物及類似者。例示性烷基鹵化物化合物包括CX4
、CHX3
、CH2
X2
、CH3
X,其中X=F、Cl、Br、或I。例示性烯烴鹵化物化合物包括C2
H3
X、C2
H2
X2
、C2
HX3
、及C2
X4
,其中X=F、Cl、Br、或I。例示性炔烴鹵化物化合物包括C2
X2
及HC2
X,其中X=F、Cl、Br、或I。例示性金屬烷基化合物包括AlMe3
、AlEt3
、Al(iPr)3
、Al(iBu)3
、Al(tBu)3
、GaMe3
、GaEt3
、Ga(iPr)3
、Ga(iBu)3
、Ga(tBu)3
、InMe3
、InEt3
、In(iPr)3
、In(iBu)3
、In(tBu)3
、and ZnMe2
、ZnEt2
。
例示性氫反應物包括氫(H2
)、氫化硼(諸如B2
H6
)、揮發性金屬氫化物及其加合物(諸如DIBAL及R3
N-AlH3
,其中R係烷基或芳基,包含具有能夠與金屬形成螯合物之雜原子者)。
在一些情況下,二或更多個前驅物及/或二或更多個反應物可流至反應室,使得二或更多個前驅物及/或二或更多個反應物在反應室內重疊。例如,一或多個氮反應物及一或多個碳反應物可共流至反應室。
在一些情況下,三元化合物(諸如氮化碳釩(VCN)或氮氧化釩)可藉由使用具有形成層的部分之二或更多個物種(例如C及N或O及N)的反應物來形成。例如,釩前驅物可包括鹵化釩(諸如四氯化釩),且反應物可包括烷基化胺(諸如第三丁基肼)。
在熱循環沉積製程的情況下,提供反應物至反應室之步驟的持續時間可相對長,以允許反應物與另一前驅物或其衍生物起反應。例如,持續時間可大於或等於5秒、或者大於或等於10秒、或者介於約5與10秒之間。
作為步驟104的部分,反應室可使用真空及/或惰性氣體沖洗,以例如緩解反應物之間的氣相反應,並致能自飽和的表面反應(例如在ALD的情況下)。額外或替代地,可移動基材以分開地接觸第一氣相反應物及第二氣相反應物。在使基材與下一反應性化學品接觸之前,可諸如藉由沖洗反應空間或藉由移動基材而從基材表面或反應室移除過剩的化學品及反應副產物(若有的話)。反應室可在提供前驅物至反應室的步驟之後及/或在提供反應物至反應室的步驟之後沖洗。
在本揭露之一些實施例中,方法100包括重複單位沉積循環,單位沉積循環包括(1)提供釩前驅物及銦前驅物之一或多者至反應室及(2)提供反應物至反應室,其中在步驟(1)及/或步驟(2)之後進行可選的沖洗或移動步驟。基於例如釩及/或銦層的所欲厚度,沉積循環可重複一或多次。例如,若釩及/或銦層的厚度小於具體應用所欲者,則提供前驅物至反應室及提供反應物至反應室的步驟可重複一或多次。一旦釩及/或銦層已沉積達所欲厚度,基材可經受額外製程以形成裝置結構及/或裝置。
在一些實施例中,在具有多於約2、多於約5、多於約10、多於約25、多於約50、多於約100、或介於約10與100之間、或約5及約25之深寬比(高度/寬度)的結構之中/之上,釩及/或銦層之步階覆蓋係等於或大於約50%、或大於約80%、或大於約90%、或約95%、或約98%、或約99%或更大。
釩及/或銦層的生長率可係相對低(例如,小於3埃/循環、介於約0.2與3埃/循環之間、或約0.1至約1埃/循環)。相對低的生長率可促成膜厚度之所欲的準確度及/或膜厚度均勻性。
圖2繪示根據本揭露之額外實例之裝置200的結構/一部分。裝置或結構200包括基材202、介電或絕緣材料205、及釩及/或銦層208。在所繪示之實例中,結構200亦包括額外導電層210。
基材202可係或可包括本文所述之基材材料中的任何者。
介電或絕緣材料205可包括一或多個介電或絕緣材料層。舉實例而言,介電或絕緣材料205可包括介面層204及經沉積為上覆於介面層204的高k材料206。在一些情況下,介面層204可不存在,或可不以可察覺程度存在。介面層204可包括氧化物(諸如氧化矽),其可使用例如化學氧化製程或氧化物沉積製程而形成於基材202之表面上。高k材料206可係或可包括例如具有大於約7之介電常數的金屬性氧化物。在一些實施例中,高k材料具有的介電常數高於氧化矽的介電常數。例示性高k材料包括下列之一或多者:氧化鉿(HfO2
)、氧化鉭(Ta2
O5
)、氧化鋯(ZrO2
)、氧化鈦(TiO2
)、矽酸鉿(HfSiOx
)、氧化鋁(Al2
O3
)、氧化鑭 (La2
O3
)、及包含一或多個此類層之混合物/層合物。
釩及/或銦層208可根據本文所述之方法形成。由於釩及/或銦層208係使用循環沉積製程形成,釩、及/或銦、及/或其他組分在釩及/或銦層208中的濃度可藉由例如控制一或多個沉積循環期間之釩及/或銦前驅物、及/或(多個)反應物、及/或各別脈衝時間的量而從釩及/或銦層208的底部至釩及/或銦層208的頂部有所變化。在一些情況下,釩及/或銦層208可具有化學計量組成。釩及/或銦層208的功函數及其他性質可藉由變更釩、及/或銦、及/或其他化合物在層中或在沉積循環中的量來變更。
釩及/或銦層208可包括雜質(諸如鹵化物、氫或類似者),其單獨或組合的量係小於一原子百分比、小於0.2原子百分比、小於0.1原子百分比或小於0.05原子百分比。
釩及/或銦層208的厚度可根據應用而改變。舉實例而言,釩及/或銦層208的厚度可係小於5 nm、或約0.1 nm至約10 nm、或約0.1 nm至約5 nm、或約0.2 nm至約5 nm、或約0.3 nm至約3 nm、或約0.3 nm至約1 nm。當用以取代包括鋁而非釩及/或銦的層時,釩及/或銦層208可係相對薄,其可係包括功函數及/或電壓臨限調整層之許多應用所欲者。在一些情況下,釩及/或銦層208的厚度可大於2 nm(例如,在將釩及/或銦層208用作障壁層或襯墊時)。
經移位的釩及/或銦層208之功函數可係> 4.6 eV、> 4.7 eV、> 4.8 eV、> 4.9 eV、> 4.95 eV、或> 5.0 eV。裝置的功函數值可使用如本文所述之銦及/或釩層來移位約30 meV至約400 meV、或約30 meV至約200 meV、或約50 meV至約100 meV。舉具體實例而言,具有約0.3 nm之厚度的氮化釩層可用以使功函數值或臨限電壓移位約-50mEV。可操縱釩及/或銦層208的厚度及/或組成以得到所欲的功函數及/或臨限電壓移位。
額外或替代地,釩及/或銦層208可例如使用方法100形成連續膜,其厚度係< 5 nm、< 4 nm、< 3 nm、< 2 nm、< 1.5 nm、< 1.2 nm、< 1.0 nm、或< 0.9 nm。釩及/或銦層208可係相對平滑的,其具有相對低的晶粒邊界形成。在一些情況下,釩及/或銦層208可係非晶的,其具有相對低的柱狀晶體結構(與TiN相比)。在小於10 nm的厚度下,例示性釩及/或銦層208的RMS粗糙度可係< 1.0 nm、< 0.7 nm、< 0.5 nm、< 0.4 nm、< 0.35 nm、或< 0.3 nm。
額外的導電層210可包括例如金屬(諸如耐火金屬或類似者)。舉實例而言,導電層210可係或可包括下列之一或多者:氮化鈦;氮化釩;包括氮化鈦及金屬(例如W、Co、Ru、Mo)或氮化鈦、鈦鋁碳、及氮化鈦之金屬堆疊;鎢;氮化鎢碳;鈷;銅;鉬;釕;或類似者。
雖然將釩及/或銦層208繪示為上覆於介電或絕緣材料205,在一些情況下,釩及/或銦層208可額外或替代地直接形成在基材202(其可包括各種層及/或形貌)上方及/或下伏於介電或絕緣材料205、介於介面層204與高k材料206之間、及/或介於高k材料206的層之間。進一步地,釩及/或銦層208可經沉積及至少部分地移除,使得所得的結構可不再包括釩及/或銦層208或包括比初始經形成在結構上之數目更少之釩及/或銦層。
圖3繪示根據本揭露之實例之另一例示性結構300。裝置或結構300包括基材302、介電或絕緣材料304、及釩及/或銦層306。在所繪示之實例中,結構300亦包括額外導電層312。基材302、介電或絕緣材料304、釩及/或銦層306、及額外導電層312可係相同或類似於基材202、介電或絕緣材料205、釩及/或銦層208、及導電層210。類似於上文,釩及/或銦層306可額外或替代地形成為上覆於基材302(其可包括各種層及/或形貌)及/或下伏於絕緣材料304、介於介面層308與高k材料310之間、及/或介於高k材料310的層之間。進一步地,釩及/或銦層306可經沉積及至少部分地移除,使得所得的結構可不再包括釩及/或銦層306或包括比初始經形成在結構上之數目更少之釩及/或銦層。
在所繪示之實例中,基材302包括源極區314、汲極區316、及通道區318。雖然繪示為水平結構,根據本揭露之實例的結構及裝置可包括垂直及/或三維結構及裝置(諸如鰭式FET裝置)。
圖4繪示根據本揭露之實例之另一結構400。結構400適於環繞式閘極場效電晶體(GAA FET)(亦稱為側向奈米線FET)裝置及類似者。
在所繪示之實例中,結構400包括半導體材料402、介電材料404、釩及/或銦層406、及導電層408。結構400可形成為上覆於基材,包括本文所述之任何基材材料。
半導體材料402可包括任何合適的半導體材料。例如,半導體材料402可包括IV族、III-V族、或II-VI族半導體材料。舉實例而言,半導體材料402包括矽。
介電材料404、釩及/或銦層406、及導電層408可係相同或可類似於上述之介電或絕緣材料205、釩及/或銦層208、及導電層210。根據本揭露之進一步的實例,釩及/或銦層406可形成為上覆於半導體材料402及/或下伏於介電材料404。
圖5繪示根據本揭露之尚有額外的例示性實施例之系統500。系統500可用以執行如本文所述之方法及/或形成如本文所述之結構或裝置部分。
在所繪示之實例中,系統500包括一或多個反應室502、前驅物氣體源504、反應物氣體源506、沖洗氣體源508、排氣源510、及控制器512。
反應室502可包括任何合適的反應室(諸如ALD或CVD反應室)。
前驅物氣體源504可包括容器及單獨或與一或多個載體(例如惰性)氣體混合之如本文所述之一或多個釩及/或銦前驅物。反應物氣體源506可包括容器及單獨或與一或多個載體氣體混合之如本文所述之一或多個反應物。如本文所述,沖洗氣體源508可包括一或多個惰性氣體。雖然經繪示為具有三個氣體源504至508,系統500可包括任何合適數目的氣體源。氣體源504至508可經由管線514至518耦合至反應室502,該等管線可各自包括流量控制器、閥、加熱器及類似者。
排氣源510可包括一或多個真空泵。
控制器512包括電子電路系統及軟體,以選擇性地操作閥、歧管、加熱器、泵、及包括在系統500中的其他組件。此類電路系統及組件操作以從各別的源504至508引入前驅物、反應物、及沖洗氣體。控制器512可控制氣體脈衝序列的時序、基材及/或反應室的溫度、及反應室內的壓力、以及各種其他操作以提供系統500的合宜操作。控制器512可包括控制軟體以電氣或氣動地控制閥,以控制前驅物、反應物、及沖洗氣體進出反應室502的流動。控制器512可包括執行某些任務之模組(諸如軟體或硬體組件,例如FPGA或ASIC)。模組可有利地經組態以常駐在控制系統之可定址儲存媒體上,並經組態以執行一或多個製程。
系統500之其他組態係可行的,包括不同數目及種類的前驅物及反應物源以及沖洗氣體源。進一步地,將理解閥、導管、前驅物源、及沖洗氣體源有許多配置,其等可用以實現將氣體選擇性饋入反應室502的目標。進一步地,作為一系統示意圖示,為了容易繪示已省略許多組件,且此類組件可包括例如各種閥、歧管、純化器、加熱器、容器、通氣孔、及/或旁路。
在反應器系統500之操作期間,基材(諸如半導體晶圓(未繪示))係從例如基材搬運系統傳遞至反應室502。一旦將(多個)基材傳遞至反應室502,來自氣體源504至508之一或多個氣體(諸如前驅物、反應物、載體氣體、及/或沖洗氣體)即經引入反應室502中。
上文所述之本揭露之實例實施例並未限制本發明的範疇,因為這些實施例僅為本發明之實施例之實例,本發明之範疇係由隨附之申請專利範圍及其法定等同物定義。任何等效具體例皆旨在本發明之範疇內。實際上,除本文中所示及所述者以外,所屬技術領域中具有通常知識者可由本說明書明白本發明之各種修改(諸如所述元件之替代可用組合)。此類修改及實施例亦意欲落在隨附之申請專利範圍的範疇內。
100:方法
102:步驟
104:步驟
200:裝置
202:基材
204:介面層
205:介電或絕緣材料
206:高k材料
208:釩及/或銦層
210:導電層
300:結構
302:基材
304:介電或絕緣材料
306:釩及/或銦層
308:介面層
310:高k材料
312:導電層
314:源極區
316:汲極區
318:通道區
400:結構
402:半導體材料
404:介電材料
406:釩及/或銦層
408:導電層
500:系統
502:反應室
504:前驅物氣體源
506:反應物氣體源
508:沖洗氣體源
510:排氣源
512:控制器
當結合下列闡釋性圖式考慮時,可藉由參照實施方式及申請專利範圍而得到對本揭露之實施例的更完整瞭解。
圖1繪示根據本揭露之例示性實施例之方法。
圖2至圖4繪示根據本揭露之實施例之例示性結構。
圖5繪示根據本揭露之額外的例示性實施例之反應器系統。
將理解,圖式中之元件係為了簡明及清楚起見而繪示且不一定按比例描繪。例如,圖式中的一些元件之尺寸可相對於其他元件誇大,以幫助提升對本發明所繪示之實施例的瞭解。
100:方法
102:步驟
104:步驟
Claims (27)
- 一種形成結構之方法,該方法包含下列步驟: 在一反應器之一反應室內提供一基材;及 使用一循環沉積製程將一包含釩及銦之一或多者的層沉積至該基材之一表面上, 其中該循環沉積製程包含: 提供一釩前驅物及一銦前驅物之一或多者至該反應室;及 提供一氧反應物、一氮反應物、一硫反應物、及一碳反應物之一或多者至該反應室。
- 如請求項1所述之方法,其中該釩前驅物包含一鹵化釩、一氧鹵化釩、一釩有機金屬化合物、及一釩金屬有機化合物之一或多者。
- 如請求項1所述之方法,其中該銦前驅物包含一烷基銦化合物、一環戊二烯基銦化合物、一β二酮基銦化合物、及一銦醋酸鹽化合物之一或多者。
- 如請求項1所述之方法,其中該結構包含一臨限電壓調諧層,其包含該包含釩及銦之一或多者的層。
- 如請求項1所述之方法,其中該結構包含一p型偶極移位器層,其包含該包含釩及銦之一或多者的層。
- 如請求項1所述之方法,其中該結構包含一環繞式閘極結構。
- 如請求項6所述之方法,其中該環繞式閘極結構包括一高k介電層。
- 如請求項1所述之方法,其中該循環沉積製程包含一循環化學氣相沉積製程。
- 如請求項1所述之方法,其中該循環沉積製程包含一熱製程。
- 如請求項1所述之方法,其中該包含釩及銦之一或多者的層之一厚度係介於約0.1 nm與約5 nm之間。
- 如請求項1所述之方法,其中一釩前驅物及一銦前驅物之該一或多者包含一鹵化物,且該提供一氧反應物、一氮反應物、一硫反應物、及一碳反應物之一或多者至該反應室之步驟包含提供該氧反應物。
- 如請求項1所述之方法,其中該釩前驅物包含一β二酮基化合物。
- 如請求項1所述之方法,其中該反應物包含該氧反應物。
- 如請求項1所述之方法,其中該結構包含一障壁層,其包含該包含釩及銦之一或多者的層。
- 如請求項1所述之方法,其中該結構包含一蝕刻止擋層,其包含該包含釩及銦之一或多者的層。
- 一種結構,其包含根據如請求項1所述之方法形成之包含釩及銦之一或多者的層。
- 如請求項16所述之結構,其包含上覆於一半導體材料之一高k介電層。
- 如請求項17所述之結構,其中該包含釩及銦之一或多者的層係上覆於該高k介電層並與該高k介電層接觸。
- 如請求項16所述之結構,其中該包含釩及銦之一或多者的層之一厚度係小於5 nm。
- 如請求項16所述之結構,其中該包含釩及銦之一或多者的層包含氮化釩及氮化碳釩之一或多者。
- 一種環繞式閘極裝置,其包含如請求項16所述之結構。
- 如請求項21所述之環繞式閘極裝置,其中該包含釩及銦之一或多者的層包含一氧化釩及一氧化銦之一或多者。
- 一種金氧半導體(MOS)裝置,其包含如請求項16所述之結構。
- 一種DRAM裝置,其包含如請求項16所述之結構。
- 一種邏輯裝置,其包含如請求項16所述之結構。
- 一種3DNAND裝置,其包含如請求項16所述之結構。
- 一種系統,其包含: 一或多個反應室; 一前驅物氣體源,其包含一釩前驅物及一銦前驅物之一或多者; 一反應物氣體源,其包含一氧反應物、一氮反應物、一硫反應物、及一碳反應物之一或多者; 一排氣源;及 一控制器, 其中該控制器係經組態以控制至該一或多個反應室之至少一者中的氣體流,以使用一循環沉積製程形成上覆於一基材表面之一包含釩及銦之一或多者的層。
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KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
CN113394067A (zh) | 2020-03-13 | 2021-09-14 | Asm Ip私人控股有限公司 | 基板处理设备 |
US20210292902A1 (en) | 2020-03-17 | 2021-09-23 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
KR20210127087A (ko) | 2020-04-10 | 2021-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
US20210327704A1 (en) | 2020-04-16 | 2021-10-21 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
TW202140846A (zh) | 2020-04-17 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 注入器、及垂直熔爐 |
TW202143328A (zh) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於調整膜應力之方法 |
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2021
- 2021-01-21 TW TW110102274A patent/TW202130846A/zh unknown
- 2021-01-26 CN CN202110103923.XA patent/CN113284789A/zh active Pending
- 2021-01-26 KR KR1020210010845A patent/KR20210099519A/ko active IP Right Grant
- 2021-01-29 US US17/162,279 patent/US11521851B2/en active Active
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2022
- 2022-11-17 US US17/989,081 patent/US20230078233A1/en active Pending
Also Published As
Publication number | Publication date |
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KR20210099519A (ko) | 2021-08-12 |
US20230078233A1 (en) | 2023-03-16 |
US20210242011A1 (en) | 2021-08-05 |
CN113284789A (zh) | 2021-08-20 |
US11521851B2 (en) | 2022-12-06 |
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