WO2013005726A1 - プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法 - Google Patents
プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法 Download PDFInfo
- Publication number
- WO2013005726A1 WO2013005726A1 PCT/JP2012/066925 JP2012066925W WO2013005726A1 WO 2013005726 A1 WO2013005726 A1 WO 2013005726A1 JP 2012066925 W JP2012066925 W JP 2012066925W WO 2013005726 A1 WO2013005726 A1 WO 2013005726A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- amorphous carbon
- carbon film
- mesh
- coupling agent
- printing
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000011737 fluorine Substances 0.000 claims abstract description 69
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 69
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 66
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 66
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 62
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 41
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 32
- 239000001301 oxygen Substances 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000002194 amorphous carbon material Substances 0.000 claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 141
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 117
- 238000007639 printing Methods 0.000 claims description 52
- 239000000463 material Substances 0.000 claims description 46
- 239000000839 emulsion Substances 0.000 claims description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 27
- 239000007822 coupling agent Substances 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 23
- 239000003921 oil Substances 0.000 claims description 21
- 230000002940 repellent Effects 0.000 claims description 19
- 239000005871 repellent Substances 0.000 claims description 19
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- 238000007650 screen-printing Methods 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 150000004645 aluminates Chemical class 0.000 claims description 3
- 238000006482 condensation reaction Methods 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000009832 plasma treatment Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 description 56
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 52
- 239000010410 layer Substances 0.000 description 45
- 230000000052 comparative effect Effects 0.000 description 41
- 238000006243 chemical reaction Methods 0.000 description 36
- 238000000034 method Methods 0.000 description 36
- 229910052786 argon Inorganic materials 0.000 description 26
- 239000010935 stainless steel Substances 0.000 description 22
- 229910001220 stainless steel Inorganic materials 0.000 description 21
- 238000004506 ultrasonic cleaning Methods 0.000 description 15
- 238000005259 measurement Methods 0.000 description 14
- 229910052500 inorganic mineral Inorganic materials 0.000 description 12
- 239000011707 mineral Substances 0.000 description 12
- 229910052799 carbon Inorganic materials 0.000 description 11
- 239000007788 liquid Substances 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 11
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 9
- 229910001882 dioxygen Inorganic materials 0.000 description 9
- -1 polypropylene Polymers 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 125000001153 fluoro group Chemical group F* 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910001873 dinitrogen Inorganic materials 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 6
- 238000005266 casting Methods 0.000 description 5
- 239000000976 ink Substances 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- UMHKOAYRTRADAT-UHFFFAOYSA-N [hydroxy(octoxy)phosphoryl] octyl hydrogen phosphate Chemical compound CCCCCCCCOP(O)(=O)OP(O)(=O)OCCCCCCCC UMHKOAYRTRADAT-UHFFFAOYSA-N 0.000 description 3
- WDJHALXBUFZDSR-UHFFFAOYSA-M acetoacetate Chemical compound CC(=O)CC([O-])=O WDJHALXBUFZDSR-UHFFFAOYSA-M 0.000 description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 150000004756 silanes Chemical class 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000009864 tensile test Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 239000001913 cellulose Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 235000015096 spirit Nutrition 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009941 weaving Methods 0.000 description 2
- IEKHISJGRIEHRE-UHFFFAOYSA-N 16-methylheptadecanoic acid;propan-2-ol;titanium Chemical compound [Ti].CC(C)O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O.CC(C)CCCCCCCCCCCCCCC(O)=O IEKHISJGRIEHRE-UHFFFAOYSA-N 0.000 description 1
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- 229910000851 Alloy steel Inorganic materials 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-M Butyrate Chemical group CCCC([O-])=O FERIUCNNQQJTOY-UHFFFAOYSA-M 0.000 description 1
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Natural products CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910017709 Ni Co Inorganic materials 0.000 description 1
- 229910003267 Ni-Co Inorganic materials 0.000 description 1
- 229920000459 Nitrile rubber Polymers 0.000 description 1
- 229910003262 Ni‐Co Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229920000297 Rayon Polymers 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- BSYQEPMUPCBSBK-UHFFFAOYSA-N [F].[SiH4] Chemical compound [F].[SiH4] BSYQEPMUPCBSBK-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- JPUHCPXFQIXLMW-UHFFFAOYSA-N aluminium triethoxide Chemical group CCO[Al](OCC)OCC JPUHCPXFQIXLMW-UHFFFAOYSA-N 0.000 description 1
- IKHOZNOYZQPPCK-UHFFFAOYSA-K aluminum;4,4-diethyl-3-oxohexanoate Chemical compound [Al+3].CCC(CC)(CC)C(=O)CC([O-])=O.CCC(CC)(CC)C(=O)CC([O-])=O.CCC(CC)(CC)C(=O)CC([O-])=O IKHOZNOYZQPPCK-UHFFFAOYSA-K 0.000 description 1
- YNCDEEFMDXHURQ-UHFFFAOYSA-N aluminum;ethyl 3-oxobutanoate Chemical compound [Al].CCOC(=O)CC(C)=O YNCDEEFMDXHURQ-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- GMVLGJDMPCRIJK-CGZBRXJRSA-N benzyl n-[(2s)-1-[(3-hydroxyoxan-4-yl)amino]-4-methyl-1-oxopentan-2-yl]carbamate Chemical compound N([C@@H](CC(C)C)C(=O)NC1C(COCC1)O)C(=O)OCC1=CC=CC=C1 GMVLGJDMPCRIJK-CGZBRXJRSA-N 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009954 braiding Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KQAHMVLQCSALSX-UHFFFAOYSA-N decyl(trimethoxy)silane Chemical compound CCCCCCCCCC[Si](OC)(OC)OC KQAHMVLQCSALSX-UHFFFAOYSA-N 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- WPCPXPTZTOMGRF-UHFFFAOYSA-K di(butanoyloxy)alumanyl butanoate Chemical group [Al+3].CCCC([O-])=O.CCCC([O-])=O.CCCC([O-])=O WPCPXPTZTOMGRF-UHFFFAOYSA-K 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- XMQYIPNJVLNWOE-UHFFFAOYSA-N dioctyl hydrogen phosphite Chemical compound CCCCCCCCOP(O)OCCCCCCCC XMQYIPNJVLNWOE-UHFFFAOYSA-N 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- XEJNLUBEFCNORG-UHFFFAOYSA-N ditridecyl hydrogen phosphate Chemical compound CCCCCCCCCCCCCOP(O)(=O)OCCCCCCCCCCCCC XEJNLUBEFCNORG-UHFFFAOYSA-N 0.000 description 1
- VTIXMGZYGRZMAW-UHFFFAOYSA-N ditridecyl hydrogen phosphite Chemical compound CCCCCCCCCCCCCOP(O)OCCCCCCCCCCCCC VTIXMGZYGRZMAW-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 229910001325 element alloy Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000011505 plaster Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002964 rayon Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- NMEPHPOFYLLFTK-UHFFFAOYSA-N trimethoxy(octyl)silane Chemical compound CCCCCCCC[Si](OC)(OC)OC NMEPHPOFYLLFTK-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
- B41N1/00—Printing plates or foils; Materials therefor
- B41N1/24—Stencils; Stencil materials; Carriers therefor
- B41N1/247—Meshes, gauzes, woven or similar screen materials; Preparation thereof, e.g. by plasma treatment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/02—Printing inks
- C09D11/023—Emulsion inks
- C09D11/0235—Duplicating inks, e.g. for stencil printing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/002—Priming paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/16—Antifouling paints; Underwater paints
- C09D5/1693—Antifouling paints; Underwater paints as part of a multilayer system
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T442/00—Fabric [woven, knitted, or nonwoven textile or cloth, etc.]
- Y10T442/10—Scrim [e.g., open net or mesh, gauze, loose or open weave or knit, etc.]
Definitions
- the present invention relates to a primer composition, and particularly to a primer composition used as a primer layer for a fluorine-containing silane coupling agent.
- the present invention also relates to a structure including a primer layer made of the primer composition and a method for producing the structure.
- a surface modification treatment that imparts oil repellency to a substrate surface by coating the surface of the substrate with a silane coupling agent containing fluorine is known.
- a fluorine coating layer made of a fluorine-containing silane coupling agent on the surface of a screen printing mesh, thereby imparting oil repellency to the mesh and improving the releasability from the printing paste.
- Fluorine-containing silane coupling agents are often formed via a primer layer rather than directly on a mesh body made of a metal such as stainless steel in order to ensure fixability to the mesh.
- a method is known in which a liquid primer is applied to a mesh and a fluorine-containing silane coupling agent is applied on the liquid primer (Patent Documents 1 and 2).
- a technology for preventing electronic parts to be transported from sticking to a porous sheet by coating a porous sheet provided at the suction port of the suction collet with a fluorine-containing silane coupling agent in an electronic component transport apparatus is known. It has been.
- a liquid primer is often used.
- an amorphous carbon film made of an amorphous carbon material such as diamond-like carbon (DLC) is formed as a primer layer on the mesh surface by a dry process such as CVD, and the DLC film It is conceivable to form a fluorine coating layer on the substrate. However, the fluorine coating layer is not sufficiently fixed to the amorphous carbon film.
- a primer composition that forms a primer layer made of an amorphous carbon material and firmly bonded to a fluorine-containing silane coupling agent. Further, according to various embodiments of the present invention, a structure including a primer layer made of the primer composition and a method for manufacturing the structure are provided.
- an amorphous carbon film containing at least one of the group consisting of silicon (Si), oxygen (O), and nitrogen (N) has a fluorine-containing silane coupling agent and good fixability. Found to have.
- the primer composition according to an embodiment of the present invention is made of an amorphous carbon material containing at least one element of silicon, oxygen, or nitrogen.
- a structure according to an embodiment of the present invention includes a base material, and an amorphous carbon film layer that is formed directly or indirectly on the base material and contains at least one element of silicon, oxygen, or nitrogen.
- the amorphous carbon film layer may be formed directly on the substrate or indirectly through the intermediate layer.
- the structure manufacturing method includes a step of preparing a base material, and an amorphous carbon film layer containing at least one element of silicon, oxygen, or nitrogen on the base material. Forming.
- a primer composition is provided that is formed of an amorphous carbon material and forms a primer layer that is firmly bonded to a fluorine-containing silane coupling agent. Further, according to various embodiments of the present invention, a structure including a primer layer made of the primer composition and a method for producing the structure are provided.
- the top view which represents typically the whole structure of a screen plate provided with the mesh which concerns on one Embodiment of this invention.
- Sectional drawing which represents typically the screen plate provided with the mesh which concerns on one Embodiment of this invention.
- the graph which shows the measurement result of the contact angle with Examples 1-7 and the comparative example 1 with the mineral spirit.
- the graph which shows the measurement result of the contact angle with water of Examples 1-9 and Comparative Example 1
- the graph which shows the result of having measured the contact angle with the mineral spirit in the several position of the surface of the comparative example 1
- the graph which shows the result of having measured the contact angle with the mineral spirit in the several position of the surface of Example 7 Photograph of sample surface of Comparative Example 2 Photograph of sample surface of Comparative Example 3 Photograph of sample surface of Example 10 Photographs of sample surface before and after stretching in Comparative Example 4 and Example 12
- the primer composition according to an embodiment of the present invention is made of an amorphous carbon material containing at least one element of silicon, oxygen, or nitrogen.
- This primer composition is used as a primer layer of various structures.
- the primer composition according to one embodiment of the present invention is used as a primer layer when a fluorine-containing silane coupling agent is formed on a screen printing mesh.
- FIG. 1 is a plan view schematically showing the overall configuration of the screen plate
- FIG. 2 is a cross-sectional view schematically showing the screen plate according to an embodiment of the present invention.
- a primer layer made of the primer composition according to an embodiment of the present invention is formed on the screen plate. 1 and 2 schematically show the configuration of a screen plate according to an embodiment of the present invention, and it should be noted that the dimensions are not necessarily shown accurately.
- the screen plate 10 has a mesh 12 made of resin such as polyester, stainless steel (SUS304) or the like stretched on a frame 12 made of iron casting, stainless steel, aluminum alloy or the like.
- the emulsion 14 is partially coated.
- the mesh 16 is created by weaving yarns of various materials and wire diameters.
- the surface roughness, the cross-sectional shape, and the folding method of the yarns constituting the mesh 16 can be appropriately changed according to the application.
- the cross-sectional shape includes, for example, a round shape, an elliptical shape, a quadrangular shape, a polygonal shape, an indefinite shape, and a star shape.
- Examples of the folding method include plain weave, twill fold, and three-dimensional shape fold.
- yarn which comprises the mesh 16 is metals, such as stainless steel, steel, copper, titanium, or tungsten, or these alloys, for example.
- the material of the yarn constituting the mesh 16 includes chemical fibers such as polypropylene, polyester, polyethylene, nylon, and vinyl, blended fibers such as rayon, inorganic materials such as carbon fiber and glass fiber, wool, silk, cotton, and cellulose. Natural fiber may be used.
- the mesh 16 may be a mesh produced by braiding stainless steel having a wire diameter of 15 ⁇ m, a mesh opening width of 24.7 ⁇ m, and a mesh count of 640 (640 meshes exist in 1 inch width).
- a portion where the fiber yarns cross each other can be fixed by a deposit of plating, an adhesive, a vapor deposition film, a sputtered film, or the like.
- This plating deposit is formed, for example, by electrolytic Ni plating.
- the intersection of mesh yarns can be crushed to reduce the thickness of the mesh 16 to a thickness corresponding to the thickness of one mesh yarn.
- Specifications such as the thickness of the mesh 16, the number of counts, the uniformity of the size of the mesh opening, the position of the mesh opening, the taper angle of the mesh opening, and the shape of the opening are not limited to those described here.
- the printing method, printing pattern, printing target, required durability, and the like can be changed as appropriate.
- the edge part of the opening part of the mesh 16 is appropriately chamfered.
- the mesh 16 may be a combination of a plurality of meshes. For example, the same type of meshes or different types of meshes can be combined.
- the mesh 16 is usually formed by weaving a thread-like material, but can be formed by other methods.
- the mesh 16 can be formed by an electroforming method, a printing method, and a photolithography method.
- the mesh 16 is formed by forming a through-hole on the base material by various methods such as laser processing, etching processing, drill processing, punching processing, and electric discharge processing.
- the through hole formed at this time corresponds to the opening of the mesh 16.
- the materials and creation methods described above can be combined as appropriate.
- a diazo photosensitive emulsion can be used as the emulsion 14.
- a printing pattern opening 18 corresponding to the printing pattern is formed by a photolithography method.
- the print pattern opening 18 is formed so as to penetrate the emulsion 14 in the thickness direction.
- a part of the emulsion 14 is cured by exposing the emulsion 14 coated on the mesh 16 with a mask pattern of a photomask, and then only a portion of the emulsion 14 that has been cured by exposure is cured. Is left on the mesh 16 and the other portions are removed to form the printed pattern opening 18.
- the printed pattern opening 18 is defined by the inner wall 22 of the emulsion 14. Further, instead of directly attaching the mesh 16 on which the printing pattern is formed to the frame body 12, a support screen (not shown) different from the mesh 16 is attached to the frame body 12, and the mesh 16 is attached to the support screen. Also good. In one embodiment, the portion of the support screen that overlaps the mesh 16 is cut with a cutter knife or the like.
- the printed pattern opening 18 can be formed by a method other than the photolithography method. For example, when the reproducibility of the print pattern is not strictly required, a material capable of forming a print pattern opening such as clay or plaster on the screen mesh can be arbitrarily used.
- a plate-like or foil-like print pattern holding portion in which a print pattern opening 18 is formed may be provided.
- This printed pattern holding part can be formed from various materials, such as a metal, an alloy, or resin, for example.
- the metal used as the material for the print pattern holding unit include steel, copper, Ni, gold, silver, zinc, aluminum, and titanium.
- alloys used as the material for the printed pattern holding portion include aluminum alloys, titanium alloys, stainless steel alloys, binary alloys such as chromium-molybdenum steel alloys, Ni-Co alloys or Ni-W alloys, and multi-element alloys. included.
- the resin used as the material for the print pattern holding unit examples include polypropylene, polyester, polyethylene, nylon, acrylic, PET, PEN, polyimide, polyimide amide, glass epoxy, and FRP.
- synthetic rubber such as cellulose, glass, ceramics, and nitrile, or natural rubber can be used as a material for the printed pattern holding portion. These materials are appropriately used in combination with other materials.
- a plate-like or foil-like printed pattern holding portion formed from these materials is attached to the mesh 16.
- the print pattern of the print pattern holding unit may be formed before being attached to the mesh 16 or may be formed after being attached.
- an amorphous carbon film made of an amorphous carbon material according to an embodiment of the present invention is formed on the surface of each thread of the mesh 16. Since the amorphous carbon film is a very thin film, the illustration is omitted.
- the amorphous carbon material according to an embodiment of the present invention includes, for example, carbon (C), hydrogen (H), and silicon (Si) as main components. Therefore, the amorphous carbon film made of the amorphous carbon material is an aC: H: Si film mainly containing C, H, and Si.
- the Si content in the amorphous carbon material is, for example, 0.1 to 50 atomic%, and preferably 10 to 40 atomic%.
- the amorphous carbon film according to an embodiment of the present invention can be formed using, for example, a plasma CVD method. Tetramethylsilane, methylsilane, dimethylsilane, trimethylsilane, dimethoxydimethylsilane, tetramethylcyclotetrasiloxane, and the like are used as a reaction gas that is a raw material for silicon. Since the amorphous carbon film formed on the mesh 16 has high affinity with the adhesive, the mesh 16 on which the amorphous carbon film is formed can be securely attached to the frame 12 by using an adhesive or an adhesive tape. Fixed to. In addition, since the amorphous carbon film according to an embodiment of the present invention generally has high adhesion to the emulsion 14, the emulsion 14 can be reliably held on the mesh 16.
- the print pattern opening 18 is formed by irradiating the print pattern opening 18 of the photosensitive emulsion 14 coated on the mesh 16 with high energy light such as UV light
- the amorphous carbon film formed on the surface of the mesh 16 is oxidized (surface activated).
- the silane coupling agent can be more firmly fixed on the surface of the mesh 16.
- the amorphous carbon film of the present application is formed on the mesh 16 exposed from the printed pattern opening 18 after the printed pattern opening 18 is formed in the emulsion 14 applied to the mesh 16.
- the mesh 16 can also be used for solid printing. When the mesh 16 is used for solid printing, it is not necessary to provide the emulsion 14.
- the amorphous carbon film formed on the mesh 16 has a peak in the D band (near 1350 cm ⁇ 1 ) and the G band (near 1500 cm ⁇ 1 ) in Raman spectroscopic analysis. Polymer carbon films that cannot be used are also included.
- the amorphous carbon material according to an embodiment of the present invention contains various elements in addition to Si or in place of Si so that a silane coupling agent described later can be retained with good fixability. Can do.
- the amorphous carbon material can be formed by further containing oxygen atoms (O) in C, H, and Si.
- the content of O in the amorphous carbon material is changed by adjusting the flow rate of oxygen in the total flow rate of the main raw material gas containing Si and oxygen.
- the ratio of the flow rate of oxygen to the total flow rate of the main raw material gas and oxygen is adjusted to be, for example, 0.01 to 12%, preferably 0.5 to 10%.
- the amorphous carbon material according to an embodiment of the present invention can be formed by further containing nitrogen (N) in C, H, Si, and O.
- the amorphous carbon material according to an embodiment of the present invention can be formed by further containing nitrogen (N) in C, H, and Si.
- N can be contained in the film by irradiating the aC: H: Si film or the aC: H: Si: O film with nitrogen plasma.
- an amorphous carbon film not containing Si which is formed in advance, is irradiated with one or both of oxygen plasma and nitrogen plasma, thereby obtaining an aC: H: O film, an aC: H: N film, Alternatively, an aC: H: O: N film can be formed.
- This plasma irradiation can be performed continuously or collectively with the carbon film formation without breaking the vacuum in the same film formation apparatus as the amorphous carbon film formation apparatus.
- the plasma-treated amorphous carbon film surface has Si—OH or —COO— on the surface.
- a thin film 20 made of a silane coupling agent containing fluorine is formed on at least a part of the amorphous carbon film on the surface of the mesh 16.
- the fluorine-containing silane coupling agent thin film 20 is firmly fixed to the amorphous carbon film on the surface of the mesh 16 by a chemical bond such as a covalent bond or a hydrogen bond by a dehydration condensation reaction.
- the silane coupling agent containing fluorine for example, FG-5010Z130-0.2 manufactured by Fluorosurf can be used.
- the thin film 20 is formed so thin that it does not substantially affect the transmission volume of the printing paste that passes through the printing pattern openings 18, for example, has a thickness of about 20 nm.
- the film thickness of the thin film 20 is not limited to this, and is appropriately changed depending on the type of fluorine-containing silane coupling agent used, and is formed, for example, in the range of 1 nm to 1 ⁇ m.
- the thin film 20 of the fluorine-containing silane coupling agent is provided on the amorphous carbon film by various methods.
- the thin film 20 is applied on the mesh 16 on which an amorphous carbon film is formed using a cloth such as a nonwoven fabric, a sponge, a sponge-like roller, a brush, or the like.
- the thin film 20 can also be formed by spraying a fluorine-containing silane coupling agent in the form of a mist. In addition to these, it can be formed by various methods such as a dipping method and a vapor deposition method such as a resistance heating method.
- the fluorine-containing coupling agent means a coupling agent having a water / oil repellent function and having a fluorine substituent in its molecular structure.
- the fluorine-containing coupling agent that can be used as the thin film 20 includes the following. (i) CF3 (CF2) 7 CH2 CH2 Si (OCH3) 3 (ii) CF3 (CF2) 7 CH2 CH2 SiCH3 Cl2 (iii) CF3 (CF2) 7 CH2 CH2 SiCH3 (OCH3) 2 (iv) (CH3) 3 SiOSO2 CF3 (v) CF3 CON (CH3) SiCH3 (vi) CF3 CH2 CH2 Si (OCH3) 3 (vii) CF3 CH2 SiCl3 (Viii) CF3 (CF2) 5 CH2 CH2 SiCl3 (ix) CF3 (CF2) 5 CH2 CH2 Si (OCH3) 3 (x) CF3 (CF2) 7 CH2 CH2 SiCl3
- fluorine coupling agents are
- the thin film 20 may have a two-layer structure including a first layer mainly composed of a coupling agent and a second layer mainly composed of a water repellent material or a water / oil repellent material.
- This first layer is formed, for example, on the amorphous carbon film on the surface of the mesh 16 with the amorphous carbon film layer through —O—M bonds (where M is Si, Any element selected from the group consisting of Ti, Al, and Zr.)
- M is Si, Any element selected from the group consisting of Ti, Al, and Zr.
- Such coupling agents include, for example, silane coupling agents, titanate coupling agents, aluminate coupling agents, and zirconate coupling agents. These coupling agents can be used by mixing with other types of coupling agents.
- the second layer includes, for example, alkylchlorosilanes such as methyltrichlorosilane, octyltrichlorosilane, and dimethyldichlorosilane, alkylmethoxysilanes such as dimethyldimethoxysilane and octyltrimethoxysilane, hexamethyldisilazane and a silylating agent, and silicone.
- It is a thin film made of a water repellent material.
- the thin film which consists of a fluorine-containing silane coupling agent mentioned above can also be used as a 2nd layer.
- the water repellent material or the water / oil repellent material that can be used as the second layer is not limited to those specified in the present specification.
- the material of the thin film 20 is appropriately determined in consideration of various printing conditions such as the composition of the printing paste and ink used (whether it is aqueous or oily), viscosity, thixotropy, and temperature and humidity during printing. Selected.
- Silane coupling agents are widely used without needing to be exemplified.
- Various commercially available silane coupling agents can be used as the first layer of the thin film 20.
- An example of a silane coupling agent applicable to the present invention is decyltrimethoxysilane (trade name “KBM-3103”, Shin-Etsu Chemical Co., Ltd.).
- the titanate coupling agent constituting the thin film 20 includes tetramethoxy titanate, tetraethoxy titanate, tetrapropoxy titanate, tetraisopropoxy titanate, tetrabutoxy titanate, isopropyl triisostearoyl titanate, isopropyl tridecylbenzenesulfonyl titanate, isopropyl tris ( Dioctyl pyrophosphate) titanate, tetraisopropyl bis (dioctyl phosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) bis (di-tridecyl) phosphite titanate, bis (dioctyl pyrophosphate) oxyacetate titanate, Bis (dioctylpyrophosphate) ethylene titanate, isopropyltrioctanoyl titanate, and Include isopropyl tric
- the aluminate coupling agent constituting the thin film 20 includes aluminum alkyl acetoacetate / diisopropylate, aluminum ethylacetoacetate / diisopropylate, aluminum trisethylacetoacetate, aluminum isopropylate, aluminum diisopropylate monosecondary butyrate Aluminum secondary butyrate, aluminum ethylate, aluminum bisethyl acetoacetate monoacetylacetonate, aluminum trisacetylacetonate, and aluminum monoisopropoxy monooroxyethyl acetoacetate.
- the trade name “Plenact AL-M” alkyl acetate aluminum diisopropylate, manufactured by Ajinomoto Fine Techno Co., Ltd. is commercially available.
- zirconia-based coupling agent examples include neopentyl (diallyl) oxy, trimethacrylic zirconate, tetra (2,2diallyloxymethyl) butyl, di (ditridecyl) phosphate zirconate, and cyclo [dineopentyl ( Diallyl)] pyrophosphate dineopentyl (diallyl) zirconate.
- the trade name “KENRIACT NZ01” (Kenrich) is commercially available.
- a water / oil repellent layer made of a fluorine-containing silane coupling agent is formed on an amorphous carbon film formed by using a plasma CVD method.
- the opening of the mesh 16 can be suppressed. Since the amorphous carbon film formed in this way is firmly bonded to the fluorine-containing silane coupling agent, the fluorine-containing silane coupling agent is fixed to the portion of the mesh 16 exposed from the printed pattern opening 18. Can be well formed.
- the thin film 20 made of a fluorine-containing silane coupling agent is formed on a portion of the mesh 16 exposed to the printed pattern opening 18 after the emulsion 14 is applied to the mesh 16.
- the amorphous carbon film according to one embodiment of the present invention can also hold the emulsion 14 with good fixability. Therefore, according to an embodiment of the present invention, the releasability of the mesh 16 with respect to the printing paste can be improved, and a printing pattern can be accurately formed on the substrate.
- the amorphous carbon film is formed on the mesh 16 by plasma (process) with high straightness.
- the amorphous carbon film according to an embodiment of the present invention is unlikely to wrap around unnecessary portions such as the back surface of the substrate (for example, the mesh 16) like a liquid primer. Therefore, in one embodiment of the present invention, a primer layer made of an amorphous carbon film is selectively formed only on a desired surface of the substrate (for example, a stencil printed circuit board surface on which water and oil repellency is to be exhibited). can do.
- the primer layer of the amorphous carbon film can be formed by a plasma process with high straightness, and therefore the primer layer is selectively formed on the surface opposite to the squeegee surface. Can do.
- the amorphous carbon film has a permeation barrier property against H 2 O and O 2 .
- the fluorine-containing silane coupling agent is water repellent and can prevent moisture adsorption.
- the amorphous carbon film structure as in the present application, and the structure in which the fluorine layer is formed on the surface layer prevent H 2 O from entering the base more than the conventional amorphous carbon film. It becomes possible to do. For this reason, it becomes possible to further protect the mesh 16 from the influence of H 2 O and O 2 , thereby making it possible to prevent the amorphous carbon film from being peeled off due to deterioration of the substrate itself.
- the amorphous carbon film according to an embodiment of the present invention exhibits higher hydrophilicity than a normal amorphous carbon film, the wet-spreading of the generally water-soluble emulsion on the mesh surface is prevented. This can promote the generation of bubbles at the interface between the emulsion and the mesh. Thereby, embrittlement of the emulsion due to generation of bubbles at the interface between the emulsion and the mesh can be suppressed.
- the amorphous carbon film has the property of suppressing the reflection and scattering of the irradiated ultraviolet light. Therefore, when the printing pattern opening 18 is formed in the emulsion 14 with a drawing apparatus using ultraviolet light, reflection and scattering of the irradiated ultraviolet light from the mesh 16 can be suppressed, and the printing pattern opening 18 can be suppressed. Dimensional accuracy can be improved.
- the screen plate 10 according to the embodiment of the present invention configured as described above is used by being arranged so that the lower surface 26 of the emulsion 14 faces the substrate. After the screen plate 10 is placed in a predetermined position, a printing paste such as a solder paste or a metal paste constituting an internal electrode is applied to the upper surface 24, and a squeegee (not shown) is pressed against the upper surface 24 at a constant pressure. By sliding along, the applied printing paste passes through the printing pattern opening 18 and is transferred to the substrate.
- the screen plate 10 can be used for printing inks, dyes, paints, rust preventives, adhesives, reactive active materials, green sheet slurries, lithography resists, pressure sensitive materials, temperature sensitive materials. It can be used to transfer materials, adsorbents and the like.
- the mesh 16 can also be applied to a printing stencil used in printing methods other than the screen printing method (transfer method).
- the mesh 16 is applied to, for example, a stencil for a pressure printing method in which ink pushed out by a pressure mechanism such as an ink jet is transferred to a printing material, and a vacuum printing method in which the ink is transferred by lowering the printing material side. obtain.
- the printing method that can use the stencil using the mesh 16 on which the amorphous carbon film of the present invention is formed is not limited to the one exemplified in this specification.
- a frame 12 made of iron casting, stainless steel or aluminum alloy, and a mesh 16 having an amorphous carbon film formed on the surface by plasma CVD or the like are prepared, and the mesh 16 is stretched on the frame 12.
- the mesh 16 may be attached directly to the frame body 12 or may be attached via a support screen.
- the photosensitive emulsion 14 is applied to the mesh 16, and a printing pattern opening 18 corresponding to the printing pattern is formed in the emulsion 14 by photolithography.
- the thin film 20 of the fluorine-containing silane coupling agent is applied to the lower surface 26 side of the portion exposed in the printed pattern opening 18 of the mesh 16 to obtain the screen plate 10.
- FIG. 3 is a diagram schematically showing a part of the suction collet provided in the electronic component transport apparatus 30 including the porous sheet according to the embodiment of the present invention.
- the suction collet 32 is provided on an arbitrary electronic component transport device so as to be movable in the vertical and horizontal directions. As illustrated, the suction collet 32 is formed in a cylindrical shape, and one end thereof is connected to a negative pressure source (not shown). In the vicinity of the suction port of the suction collet 32, a porous sheet 34 according to an embodiment of the present invention is provided.
- the electronic component 36 is placed on the wafer sheet 38.
- the electronic component 36 When the electronic component 36 is transported from the wafer sheet to another work space, the electronic component 36 is moved by supplying a negative pressure from a negative pressure source while the suction collet 32 is positioned on the electronic component 36. It is adsorbed near the adsorption port of the adsorption collet 32. Next, the electronic component 36 can be transported to the predetermined work space by moving the suction collet to the predetermined work space while the electronic component 36 is sucked and stopping the supply of the negative pressure in the work space. .
- Such an adsorption collet 32 is described in, for example, Japanese Patent Application Laid-Open No. 2011-014582 and the like, and its detailed configuration and operation are obvious to those skilled in the art. Omitted. Further, the suction collet 32 is used for conveying various members such as a green sheet in addition to the electronic component.
- the porous sheet 34 is made of, for example, a synthetic resin such as polypropylene, a metal such as stainless steel, a ceramic such as zirconia, a woven fabric such as a bandage that ensures air permeability, a nonwoven fabric, or a composite thereof. Like the screen printing mesh 16, it has an opening portion.
- An amorphous carbon film according to an embodiment of the present invention is formed as a primer layer on the surface of the porous sheet 34, and a fluorine-containing silane coupling agent is formed on the amorphous carbon film.
- This amorphous carbon film contains at least one element of silicon, oxygen, or nitrogen.
- This amorphous carbon film is formed to have the same composition by the same method as the amorphous carbon film formed on the mesh 16 described above. Therefore, the primer layer made of the amorphous carbon film according to the embodiment of the present invention can be formed so as not to block the opening portion of the porous sheet 34.
- the amorphous carbon film according to an embodiment of the present invention is selectively formed on a portion of the porous sheet 34 where the electronic component 36 is adsorbed. As a result, an amorphous carbon film (and a fluorine-containing silane coupling agent) is not formed at the contact portion between the porous sheet 34 and the adsorption collet 32, and adhesion between the porous sheet 34 and the adsorption collet 32 is ensured. can do.
- the porous sheet 34 can firmly hold the fluorine-containing silane coupling agent using the amorphous carbon film according to an embodiment of the present invention as a primer layer, the porous sheet 34 has surface characteristics excellent in smoothness, Low friction coefficient and opponent attack, high adhesion resistance to soft metals such as tin and aluminum, and high wear resistance. Thereby, when the electronic component 36 is conveyed, sticking of the electronic component to the porous sheet 34, clogging due to dust or foreign matter suction into the pores of the porous sheet can be suppressed, and the electronic component 36. The conveyance efficiency can be improved.
- the porous sheet 34 has an uneven structure on its surface.
- the fluorine-containing silane coupling agent formed in the concave portion is protected from the stress acting from the outside by the amorphous carbon film formed in the convex portion, the water / oil repellency of the porous sheet 34 is maintained. Is very expensive.
- the above-described mesh for screen printing and the porous sheet for electronic component conveying apparatus are merely examples of applying the primer composition comprising the amorphous carbon material of the present invention, and the primer composition comprising the amorphous carbon material of the present invention.
- the object can be used for any workpiece in which clogging with a liquid primer occurs.
- the fluorine-containing silane coupling agent was formed on the amorphous carbon film with good fixability in one embodiment of the present invention.
- an amorphous carbon film containing at least one element of Si, O, or N is formed on the surface of stainless steel (SUS304 2B product), and fluorine coating (fluorine-containing silane coupling) is applied to these amorphous carbon films.
- Samples (Examples 1 to 9) were prepared. And in order to investigate the fixability of the fluorine coating layer in each sample, the contact angle with mineral spirit (oil) and water (pure water) was measured for each sample.
- the contact angle with mineral spirit and water increases due to its oil repellency and water repellency. It can be confirmed whether or not the silane coupling agent is held on the amorphous carbon film.
- a base material made of stainless steel (SUS304) used as a material for the mesh 16 was prepared as a base material for each sample.
- SUS304 stainless steel
- a rectangular substrate having a side of 30 mm, a thickness of 1 mm, and a surface roughness Ra of 0.034 ⁇ m was prepared.
- the stainless steel (SUS304) plate was subjected to an electrolytic polishing treatment to uniformly smooth the surface of the substrate.
- the argon gas was evacuated, and then argon at a flow rate of 15 SCCM and tetramethylsilane at a flow rate of 10 SCCM were introduced into the reaction vessel so that the gas pressure in the reaction vessel was 1.5 Pa, and an applied voltage of ⁇ 4 kV, An amorphous carbon film was formed for 30 minutes under the conditions of a pulse frequency of 2 kHz and a pulse width of 50 ⁇ s.
- Example 1 On the surface of the amorphous carbon film thus formed, a solution of Fluorosurf FG-5010Z130-0.2 which is a fluorine-containing silane coupling agent (fluorine resin 0.02-0.2%, fluorine-based solvent 99.8% -99.98%
- Fluorosurf FG-5010Z130-0.2 which is a fluorine-containing silane coupling agent (fluorine resin 0.02-0.2%, fluorine-based solvent 99.8% -99.98%
- fluorine resin 0.02-0.2%, fluorine-based solvent 99.8% -99.98% The sample of Example 1 was obtained by dip-coating and drying for 2 days at room temperature and a humidity of about 50% (the same conditions for each of the Examples and Comparative Examples below).
- the source gas is exhausted, and then oxygen gas with a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure is 1.5 Pa, and oxygen plasma is applied under the conditions of applied voltage -3 kV, pulse frequency 2 kHz, pulse width 50 ⁇ s
- the amorphous carbon film was irradiated for 5 minutes.
- a solution of FG-5010Z130-0.2, a fluoro-containing silane coupling agent (fluorine resin 0.02 to 0.2%, fluorine-based solvent 99.8% to 99.98) is applied to the surface of the amorphous carbon film after the oxygen plasma irradiation. %) was applied by dip coating and dried at room temperature for 2 days to obtain a sample of Example 2.
- Example 3 an amorphous carbon film was formed using argon and tetramethylsilane in the same manner as in Example 1. Subsequently, after exhausting the raw material gas, nitrogen gas with a flow rate of 15 SCCM was introduced into the reaction vessel so that the gas pressure in the reaction vessel was 1.5 Pa, and the conditions were an applied voltage of ⁇ 4 kV, a pulse frequency of 2 kHz, and a pulse width of 50 ⁇ s. The amorphous carbon film was irradiated with nitrogen plasma for 5 minutes. Next, the fluorine-containing silane coupling agent is dip-coated on the amorphous carbon film after the nitrogen plasma irradiation in the same manner as in Example 1, and dried at room temperature for 2 days to obtain the sample of Example 3. It was.
- Example 4 (4) Preparation of Sample of Example 4
- an amorphous carbon film was formed using argon and tetramethylsilane.
- nitrogen gas with a flow rate of 15 SCCM was introduced into the reaction vessel so that the gas pressure in the reaction vessel was 1.5 Pa, and the conditions were an applied voltage of ⁇ 4 kV, a pulse frequency of 2 kHz, and a pulse width of 50 ⁇ s.
- the amorphous carbon film was irradiated with nitrogen plasma for 5 minutes.
- the nitrogen gas is exhausted, and oxygen gas at a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel is 1.5 Pa.
- the amorphous carbon film was irradiated with oxygen plasma for 5 minutes.
- the sample of Example 4 was dip-coated with a fluorine-containing silane coupling agent on the amorphous carbon film after irradiation with nitrogen plasma and oxygen plasma in the same manner as in Example 1 and dried at room temperature for 2 days. Got.
- the oxygen gas was adjusted so that the flow rate mixing ratio with tetramethylsilane was 4.5%.
- the surface of the amorphous carbon film thus formed was dip-coated with a fluorinated silane coupling agent and dried at room temperature for 2 days. Obtained.
- Example 2 The oxygen gas was adjusted so that the flow rate mixing ratio with tetramethylsilane was 8.5%.
- the surface of the amorphous carbon film thus formed was dip-coated with a fluorinated silane coupling agent and dried at room temperature for 2 days. Obtained.
- an amorphous carbon film containing Si was formed on the substrate surface as a base intermediate layer.
- acetylene with a flow rate of 20 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel becomes 1.5 Pa, and the applied voltage is ⁇ 4 kV, the pulse frequency is 2 kHz, and the pulse width. Film formation was performed for 30 minutes under the condition of 50 ⁇ s. As a result, an amorphous carbon film containing no Si was formed on the surface of the base intermediate layer.
- oxygen gas with a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel is 1.5 Pa, and oxygen plasma is applied under the conditions of applied voltage -4 kV, pulse frequency 2 kHz, and pulse width 50 ⁇ s.
- the amorphous carbon film was irradiated for minutes.
- the fluorine-containing silane coupling agent was dip-coated on the surface of the amorphous carbon film after the oxygen plasma irradiation in the same manner as in Example 1 and dried at room temperature for 2 days. Obtained.
- Example 8 Preparation of Sample of Example 8
- an amorphous carbon film containing Si was formed as a base intermediate layer on a stainless steel (SUS304) substrate, and Si was formed on the surface of the base intermediate layer.
- an amorphous carbon film containing no carbon was formed.
- nitrogen gas having a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel becomes 1.5 Pa, and the applied voltage is ⁇ 4 kV, the pulse frequency is 2 kHz, and the pulse width is 50 ⁇ s.
- the amorphous carbon film was irradiated with nitrogen plasma for 5 minutes.
- the surface of the amorphous carbon film after the nitrogen plasma irradiation was dip-coated with a fluorinated silane coupling agent in the same manner as in Example 1 and dried at room temperature for 2 days. Obtained.
- Example 9 Preparation of Sample of Example 9
- an amorphous carbon film containing Si was formed as a base intermediate layer on stainless steel (SUS304 base material), and Si was formed on the surface of the base intermediate layer.
- an amorphous carbon film containing no carbon was formed.
- nitrogen gas having a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel becomes 1.5 Pa, and the applied voltage is ⁇ 4 kV, the pulse frequency is 2 kHz, and the pulse width is 50 ⁇ s. Under the conditions, the amorphous carbon film was irradiated with nitrogen plasma for 5 minutes.
- the nitrogen gas is exhausted, and oxygen gas at a flow rate of 14 SCCM is introduced into the reaction vessel so that the gas pressure in the reaction vessel is 1.5 Pa.
- the amorphous carbon film was irradiated with oxygen plasma for 5 minutes.
- the surface of the amorphous carbon film after irradiation with nitrogen plasma and oxygen plasma was dip-coated with a fluorine-containing silane coupling agent in the same manner as in Example 1 and dried at room temperature for 2 days. Samples were obtained.
- the fluorine-containing silane coupling agent having a weak bond with the amorphous carbon film is peeled off from the substrate surface. Therefore, by examining the contact angle on the surface of the substrate after ultrasonic cleaning, the adhesion between the fluorine silane coupling agent and the amorphous carbon film as the lower layer can be confirmed.
- FIG. 4 is a graph showing the measurement results of contact angles with mineral spirits of Examples 1 to 7 and Comparative Example 1, and shows the average values of contact angles measured at 16 measurement positions on the substrate.
- the contact angle of the sample of Comparative Example 1 was reduced to about 40 ° by ultrasonic cleaning for 5 minutes.
- the samples of Examples 1 to 7 maintained a contact angle of 45 ° or more even after 120 minutes of ultrasonic cleaning.
- sufficient oil repellency can be confirmed at the contact angle at each measurement position, and there is a measurement position showing a low contact angle indicating that the oil repellency has been lost. There wasn't.
- the samples of Examples 1 to 6 containing Si in the amorphous carbon film all maintained an average contact angle of 50 ° or more.
- a sufficient amount of fluorine-containing silane coupling agent remained on the sample surface to exhibit water and oil repellency.
- FIG. 5 is a graph showing the measurement results of contact angles with water in Examples 1 to 9 and Comparative Example 1, and shows the average value of contact angles measured at 10 measurement positions on the substrate.
- the contact angle of Comparative Example 1 is about 90 °
- the contact angles of Examples 1 to 9 are all 105 ° or more, and each sample has water and oil repellency on the sample surface. It was confirmed that a sufficient amount of the fluorine-containing silane coupling agent remained to be exhibited.
- FIG. 6 is a graph showing the results of measuring contact angles with mineral spirits at a plurality of positions (measurement points) on the surface of Comparative Example 1 subjected to ultrasonic cleaning for 5 minutes
- FIG. 7 shows ultrasonic waves for 120 minutes. It is a graph which shows the result of having measured the contact angle with the mineral spirit in the several position (measurement point) of the surface of Example 7 which performed washing
- Comparative Example 1 has a large variation in contact angle measurement points (Max (maximum value) ⁇ Min (minimum value) width), and fluorine-containing silane coupling. It can be confirmed that the agent is partially peeled off. For Example 7, a relatively uniform contact angle was obtained.
- Examples 2 to 6 after the amorphous carbon film containing silicon is formed, the source vessel containing silicon is exhausted, oxygen and / or nitrogen introduced, and plasma irradiation is performed without vacuum-breaking the reaction vessel.
- the reaction vessel may be returned to normal pressure, and then the reaction vessel may be evacuated again to introduce oxygen and / or nitrogen.
- the contact angles with water and mineral spirit showed substantially the same numerical values as in the above examples.
- the mesh opening (opening) portion of the mesh according to one embodiment of the present invention was not substantially blocked by the printing paste by the following method.
- three stainless steel meshes (# 500-19) cut out to 210 mm ⁇ 210 mm were prepared.
- 500 stainless steel wires exist in a width of 1 inch, and the wire diameter of the stainless steel yarn is 19 ⁇ m.
- the opening width of the mesh openings is approximately 30 ⁇ m.
- a commercially available mesh (# 500-19) can be easily purchased.
- an emulsion is applied to the mesh (# 500-19) and a printed pattern for an electronic circuit is formed on the emulsion, a part of the mesh is exposed from the through hole (for example, the printed pattern opening 18) of the printed pattern.
- one of the prepared three meshes (# 500-19) was bonded to four sides of a 320 mm ⁇ 320 mm iron casting frame.
- this frame is horizontally arranged, and a liquid primer for fixing a fluorine-containing silane coupling agent on the mesh (# 500-19) portion, a primer coat PC-2 exclusively for Fluorosurf manufactured by Fluoro Technology Co., Ltd. It was applied by being included in BEMCOT CLEAN WIPE-P (nonwoven fabric).
- the frame coated with the primer coat PC-2 was placed horizontally in a constant temperature bath at room temperature and 50% humidity and dried for 60 minutes to obtain a sample of Comparative Example 2.
- one of the prepared three meshes (# 500-19) was cut into a size of 70 mm ⁇ 30 mm, and the mesh (# 500-19) cut into 70 mm ⁇ 30 mm was manufactured by Fluoro Technology.
- Primer PC-2 was flow coated.
- the mesh (# 500-19) on which the primer PC-2 was formed was placed vertically in a constant temperature bath at room temperature and 50% humidity and dried for 60 minutes to obtain a sample of Comparative Example 3.
- An amorphous carbon film was formed on the remaining one of the three prepared meshes (# 500-19) by the following method.
- a mesh (# 500-19) was set on the electrode portion of the high-pressure pulse plasma CVD apparatus, and the CVD apparatus was evacuated.
- the reaction vessel of the CVD apparatus was evacuated to 1 ⁇ 10 ⁇ 3 Pa, and the mesh (# 500-19) was cleaned with argon gas plasma for about 5 minutes. Cleaning with argon gas plasma was performed under the conditions of an argon gas flow rate of 30 SCCM, a gas pressure of 2 Pa, an applied voltage of ⁇ 4 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s.
- Example 10 After cleaning, the argon gas is evacuated, and then trimethylsilane is introduced at a flow rate of 30 SCCM so that the gas pressure in the reaction vessel becomes 1.5 Pa, under the conditions of applied voltage -4 kV, pulse frequency 10 kHz, and pulse width 10 ⁇ s. Then, an amorphous carbon film containing Si was formed on the mesh (# 500-19) for 15 minutes. Thereafter, it was adhered to an iron casting frame in the same manner as in Comparative Example 2. The frame body to which the mesh (# 500-19) on which the amorphous carbon film primer layer was formed in this manner was adhered was placed horizontally in a thermostatic chamber at room temperature and 50% humidity as in Comparative Example 2. The sample of Example 10 was obtained by drying for 60 minutes.
- each sample of Comparative Examples 2, 3 and Example 10 was photographed with a CCD camera, and it was confirmed whether the mesh opening of each sample was blocked.
- 8 to 9 are photographs of these samples taken at a magnification of 500 times using a CCD camera.
- 8 is a photograph of the sample of Comparative Example 2
- FIG. 9 is a photograph of the sample of Comparative Example 3
- FIG. 10 is a photograph of the sample of Example 10.
- the liquid primer PC-2 wets and spreads in the mesh openings of the samples of Comparative Examples 2 and 3, and a part of the opening is blocked. It was confirmed.
- the sample of Example 10 was not clogged by the primer layer of the amorphous carbon film.
- the screen printing mesh according to one embodiment of the present invention does not cause clogging of the openings.
- the mesh according to one embodiment of the present invention was firmly bonded to the emulsion by the following method.
- two 300 mm ⁇ 300 mm rectangular stainless steel meshes (# 500-19) were prepared.
- An amorphous carbon film was formed on one of the meshes (# 500-19) as follows. That is, first, the prepared mesh (# 500-19) was put into a high-pressure pulse plasma CVD apparatus, and this CVD apparatus was vacuum depressurized to 1 ⁇ 10 ⁇ 3 Pa.
- argon gas was introduced into the CVD apparatus after vacuum depressurization at a flow rate of 30 SCCM and a gas pressure of 2 Pa, and meshed with argon gas plasma (# 500-) under the conditions of an applied voltage of ⁇ 4 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s. 19) was cleaned.
- trimethylsilane was introduced into the CVD apparatus at a flow rate of 30 SCCM and a gas pressure of 2 Pa, and a film formation process was performed for 10 minutes under the conditions of an applied voltage of ⁇ 4 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s.
- An amorphous carbon film containing Si was formed on the surface of the mesh (# 500-19).
- an oxygen gas having a flow rate of 30 SCCM and a gas pressure of 2 Pa is introduced into the CVD apparatus, and the amorphous carbon film is applied under the conditions of an applied voltage of ⁇ 3 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s.
- the mesh (# 500-19) formed with was irradiated with oxygen plasma for 3 minutes to obtain a sample of Example 12 (Example 11 is missing).
- the amorphous carbon film of the sample of Example 12 contains Si and O.
- an amorphous carbon film was formed on the remaining one piece of the mesh (# 500-19) as follows.
- the prepared mesh (# 500-19) was put into a high-pressure pulse plasma CVD apparatus, and the CVD apparatus was vacuum depressurized to 1 ⁇ 10 ⁇ 3 Pa.
- argon gas was introduced into the CVD apparatus after vacuum depressurization at a flow rate of 30 SCCM and a gas pressure of 2 Pa, and meshed with argon gas plasma (# 500-) under the conditions of an applied voltage of ⁇ 4 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s. 19) was cleaned.
- trimethylsilane with a flow rate of 30 SCCM and a gas pressure of 2 Pa was introduced into the CVD apparatus, and a film formation process was performed for 5 minutes under the conditions of an applied voltage of ⁇ 4 kV, a pulse frequency of 10 kHz, and a pulse width of 10 ⁇ s.
- An intermediate layer of an amorphous carbon film was formed on the surface of the mesh (# 500-19).
- an acetylene gas having a flow rate of 30 SCCM and a gas pressure of 2 Pa is introduced into the CVD apparatus, and a film forming process is performed for 6 minutes under the conditions of applied voltage of ⁇ 4 kV, pulse frequency of 10 kHz, and pulse width of 10 ⁇ s.
- an amorphous carbon film substantially free of Si, O, and N is formed on the mesh (# 500-19) on which the intermediate layer of the amorphous carbon film is formed.
- the sample of Example 4 was obtained.
- the amorphous carbon film exposed on the surface of the sample of Comparative Example 4 is substantially free of Si, O, and N except for adhesion from the atmosphere due to the presence of the amorphous carbon film in the atmosphere. Not contained.
- Example 12 and Comparative Example 4 were respectively attached to a 450 mm ⁇ 450 mm iron casting frame body via a polyester mesh.
- each of the meshes of Example 12 and Comparative Example 4 attached to the frame was applied so that the emulsion thickness was approximately 5 ⁇ m.
- the emulsion used was composed mainly of 13% vinyl acetate emulsion, 8% polyvinyl alcohol, 14% photopolymerizable resin, and 65% water.
- the meshes of Example 12 and Comparative Example 4 in which the emulsion was coated on the entire surface in this manner were cut with a cutter knife, and the cut meshes of Example 12 and Comparative Example 4 were subjected to a tensile test under the following conditions. .
- Tensile test conditions Testing machine Instron type 5865 Grip length: 60mm Strip width: 10mm
- Measurement of stretch ratio Measure the stretch ratio between the gauge marks displayed on the sample with a video camera extensometer.
- FIG. 11 is a photograph of the surface of the sample of Comparative Example 4 and the sample of Example 12 taken with a CCD camera having a magnification of 1000 times before and after stretching.
- the photograph in FIG. 11 shows bubbles generated due to partial peeling of the emulsion from the mesh.
- the position of the bubble is indicated by an arrow.
- Table 1 shows the number of voids counted based on the photograph of FIG. 11 for each of Example 12 and Comparative Example 4.
- Example 12 it was confirmed that the number of voids was smaller before stretching than in Comparative Example 4. Further, the number of voids in Example 12 after stretching is significantly smaller than the number of voids observed in Comparative Example 4. Thus, in Example 12, it was confirmed that the fixability of the emulsion to the mesh was superior to that of Comparative Example 4.
- the fluorine-containing silane coupling agent is formed on the screen printing mesh according to the embodiment of the present invention with good fixability based on the measurement results of the contact angles between the samples of Examples 1 to 9 and mineral spirit or water. It was confirmed that it was possible. Moreover, from the result of observing the surface of the sample of Example 10 with a CCD camera, it was confirmed that the screen opening mesh according to the embodiment of the present invention did not block the opening portion. Further, from the observation result of voids in the sample of Example 12, it was confirmed that the screen printing mesh according to one embodiment of the present invention can hold the emulsion with good fixability.
Abstract
Description
本出願は、日本国特許出願2011-147669号(2011年7月1日出願)に基づく優先権を主張し、その内容は全体として参照により本明細書に組み込まれる。
技術分野
本発明は、プライマー組成物に関し、特に、フッ素含有シランカップリング剤用のプライマー層として用いられるプライマー組成物に関する。また、本発明は、当該プライマー組成物から成るプライマー層を含む構造体及び該構造体の製造方法に関する。
-COOH-等の様々な官能基を有するので、これらの官能基と後述するフッ素含有シランカップリング剤の持つ官能基とが縮合反応することにより、後述のフッ素含有シランカップリング剤と非晶質炭素膜表面との密着性をさらに改善することができる。また、酸素プラズマ又は窒素プラズマを照射することにより、非晶質炭素膜表層に極性を付与することができる。これにより、極性が付与された非晶質炭素膜とフッ素含有シランカップリング剤とが、水素結合により、強固に結合すると考えられる。
(i) CF3 (CF2 )7 CH2 CH2 Si(OCH3 )3
(ii) CF3 (CF2 )7 CH2 CH2 SiCH3 Cl2
(iii)CF3 (CF2 )7 CH2 CH2 SiCH3 (OCH3 )2
(iv)(CH3 )3 SiOSO2 CF3
(v) CF3 CON(CH3 )SiCH3
(vi) CF3 CH2 CH2 Si(OCH3 )3
(vii) CF3 CH2 SiCl3
(Viii) CF3 (CF2 )5 CH2 CH2 SiCl3
(ix) CF3 (CF2 )5 CH2 CH2 Si(OCH3 )3
(x)CF3 (CF2 )7 CH2 CH2 SiCl3
これらのフッ素カップリング剤はあくまで一例であり、本発明に適用可能なフッ素含有カップリング剤はこれらの例に限定されるものではない。フッ素含有カップリング剤としては、例えば、フロロサーフ社から販売されているFG-5010Z130-0.2(フッ素樹脂0.02~0.2%、フッ素系溶剤99.8%~99.98%)を用いることができる。
まず、メッシュ16の素材として用いられるステンレス鋼(SUS304)から成る基材を、各試料の基材として準備した。このステンレス鋼(SUS304)基材は、1辺が30mm、厚さが1mm、表面粗さRaが0.034μmの矩形のものを準備した。ステンレス鋼(SUS304)板には基材表面を均一に平滑化するため電解研摩処理を行った。
高圧パルスプラズマCVD装置に上記ステンレス鋼(SUS304)基材を2点投入し、1x10-3Paまで真空減圧した後、アルゴンガスプラズマで当該基材を約5分クリーニングした。アルゴンガスプラズマでのクリーニングは、各実施例、比較例いずれも、アルゴンガス流量15SCCM,ガス圧1Pa,印加電圧-4kVパルス周波数2kHz、パルス幅50μs、5分間の条件で行なった。クリーニング後にアルゴンガスを排気し、続いて、流量15SCCMのアルゴン、及び、流量10SCCMのテトラメチルシランを、反応容器内のガス圧が1.5Paになるように反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で非晶質炭素膜を30分間成膜した。このようにして成膜した非晶質炭素膜の表面に、フッ素含有シランカップリング剤であるフロロサーフ社のFG-5010Z130-0.2の溶液(フッ素樹脂0.02~0.2%、フッ素系溶剤99.8%~99.98%)をディップ塗布し、2日間、室温、湿度約50%、(以下各実施例、比較例とも同条件)にて乾燥させて、実施例1の試料を得た。
高圧パルスプラズマCVD装置に上記ステンレス鋼(SUS304)基材を2点投入し、1x10-3Paまで真空減圧した後、アルゴンガスプラズマで基材を約5分間クリーニングした。クリーニング後にアルゴンガスを排気し、続いて、流量15SCCMのアルゴン、及び、流量10SCCMのテトラメチルシランを、反応容器内のガス圧が1.5Paになるように反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で30分間成膜した。次に、原料ガスを排気し、その後、流量14SCCMの酸素ガスを、ガス圧が1.5Paになるように反応容器に導入し、印加電圧-3kV、パルス周波数2kHz、パルス幅50μsの条件で酸素プラズマを非晶質炭素膜に5分間照射した。次に、酸素プラズマの照射後の非晶質炭素膜の表面にフッ素含有シランカップリング剤であるフロロサーフ社のFG-5010Z130-0.2の溶液(フッ素樹脂0.02~0.2%、フッ素系溶剤99.8%~99.98%)をディップ塗布し、2日間、室温にて乾燥させて、実施例2の試料を得た。
まず、実施例1と同様にアルゴン及びテトラメチルシランを用いて非晶質炭素膜を成膜した。続いて、原料ガスを排気した後、流量15SCCMの窒素ガスを、反応容器内のガス圧が1.5Paとなるように反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で窒素プラズマを非晶質炭素膜に5分間照射した。次に、窒素プラズマ照射後の非晶質炭素膜に、実施例1と同様に、フッ素含有シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例3の試料を得た。
実施例1と同様にアルゴン及びテトラメチルシランを用いて非晶質炭素膜を成膜した。続いて、原料ガスを排気した後、流量15SCCMの窒素ガスを、反応容器内のガス圧が1.5Paとなるように反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で窒素プラズマを非晶質炭素膜に5分間照射した。次に、窒素ガスを排気し、流量14SCCMの酸素ガスを、反応容器内のガス圧が1.5Paとなるように反応容器に導入し、印加電圧-3kV、パルス周波数2kHz、パルス幅50μsの条件で酸素プラズマを非晶質炭素膜に5分間照射した。この窒素プラズマ及び酸素プラズマ照射後の非晶質炭素膜に、実施例1と同様にして、フッ素含有シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例4の試料を得た。
高圧パルスプラズマCVD装置に上記ステンレス鋼(SUS304)基材を2点投入し、1x10-3Paまで真空減圧した後、アルゴンガスプラズマで当該基材をクリーニングした。クリーニング後にアルゴンガスを排気し、続いて、反応容器内の圧力が1.5Paとなるように、流量15SCCMのテトラメチルシラン及び流量0.7SCCMの酸素ガスを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で30分間成膜した。酸素ガスは、テトラメチルシランとの流量混合比が4.5%となるよう調整した。このようにして成膜した非晶質炭素膜の表面に、実施例1と同様に、フッ素系シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例5の試料を得た。
高圧パルスプラズマCVD装置に上記ステンレス鋼(SUS304)基材を2点投入し、1x10-3Paまで真空減圧した後、アルゴンガスプラズマで当該基材をクリーニングした。クリーニング後にアルゴンガスを排気し、続いて、反応容器内の圧力が1.5Paとなるように、流量15SCCMのテトラメチルシラン及び流量1.4SCCMの酸素ガスを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で30分間成膜した。酸素ガスは、テトラメチルシランとの流量混合比が8.5%となるよう調整した。このようにして成膜した非晶質炭素膜の表面に、実施例1と同様に、フッ素系シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例6の試料を得た。
高圧パルスプラズマCVD装置に上記ステンレス鋼(SUS304)基材を2点投入し、1x10-3Paまで真空減圧した後、アルゴンガスプラズマで当該基材をクリーニングした。クリーニング後にアルゴンガスを排気し、続いて、反応容器内のガス圧が1.5Paとなるように、流量15SCCMのアルゴン、及び、流量10SCCMのテトラメチルシランを反応容器内に導入して印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で約10分間成膜した。これにより、基材表面にSiを含有する非晶質炭素膜を下地中間層として形成した。次に、アルゴン、及びテトラメチルシランガスを排気した後、反応容器内のガス圧力が1.5Paとなるように、流量20SCCMのアセチレンを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で30分間成膜を行った。これにより、下地中間層の表面にSiを含まない非晶質炭素膜を形成した。原料ガスを排気した後、反応容器内のガス圧1.5Paとなるように流量14SCCMの酸素ガスを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で酸素プラズマを5分間非晶質炭素膜に照射した。この酸素プラズマ照射後の非晶質炭素膜の表面に、実施例1と同様にして、フッ素含有シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例7の試料を得た。
実施例7と同様にしてステンレス鋼(SUS304)基材にSiを含有する非晶質炭素膜を下地中間層として形成し、この下地中間層の表面にSiを含まない非晶質炭素膜を形成した。本実施例においては、原料ガスを排気した後、反応容器内のガス圧1.5Paとなるように流量14SCCMの窒素ガスを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で窒素プラズマを5分間非晶質炭素膜に照射した。この窒素プラズマ照射後の非晶質炭素膜の表面に、実施例1と同様にして、フッ素系シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例8の試料を得た。
実施例7と同様にしてステンレス鋼(SUS304基材)にSiを含有する非晶質炭素膜を下地中間層として形成し、この下地中間層の表面にSiを含まない非晶質炭素膜を形成した。本実施例においては、原料ガスを排気した後、反応容器内のガス圧1.5Paとなるように流量14SCCMの窒素ガスを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で窒素プラズマを5分間非晶質炭素膜に照射した。次に、窒素ガスを排気し、流量14SCCMの酸素ガスを、反応容器内のガス圧が1.5Paとなるように反応容器に導入し、印加電圧-3kV、パルス周波数2kHz、パルス幅50μsの条件で酸素プラズマを非晶質炭素膜に5分間照射した。この窒素プラズマ及び酸素プラズマ照射後の非晶質炭素膜の表面に、実施例1と同様にして、フッ素含有シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、実施例9の試料を得た。
実施例7と同様にしてSUS304基材にSiを含有する非晶質炭素膜を下地中間層として形成した。本比較例においては、原料ガスを排気した後、反応容器内のガス圧1.5Paとなるように流量20SCCMのアセチレンを反応容器に導入し、印加電圧-4kV、パルス周波数2kHz、パルス幅50μsの条件で30分間成膜した。このようにして、下地中間層の上にSiを含まない非晶質炭素膜を成膜した。このSiを含まない非晶質炭素膜に、実施例1と同様にして、フッ素含有シランカップリング剤をディップ塗布し、2日間、室温にて乾燥させて、比較例1の試料を得た。
次に、上記実施例1~7と比較例1の試料それぞれについて、ミネラルスピリット(油)との濡れ性を測定した。測定は、Fibro system社製の携帯式接触角計PG-X(モバイル接触角計)を使用して、室温25℃、湿度30%の環境にて行った。フッ素含有シランカップリング剤の非晶質炭素膜に対する定着性を調べるために、実施例1~7と比較例1の各試料をアセトンに投入して120分間超音波洗浄を行い、各試料について、超音波洗浄後のミネラルスピリットとの接触角を測定した。超音波洗浄を行う際には、各試料を60分連続して超音波洗浄した後、60分間超音波洗浄を止めて放置し、その後60分間超音波洗浄を行った。なお、比較例1の試料については、短時間の超音波洗浄でフッ素含有シランカップリング剤が脱落すると想定されたため、超音波洗浄を5分間だけ行い、その5分間の超音波洗浄後の接触角を測定した。超音波洗浄は、株式会社エスエヌディ製の商品名US-20KS(発振38kHz(BLT 自励発振)、高周波出力480W)を使用して行った。超音波洗浄を行うことにより、圧電振動子からの振動によってアセトン中にキャビティ(空洞)が発生し、このキャビティが基材表面でつぶれるときに基材表面に対して大きな物理的衝撃力を発生させるので、非晶質炭素膜との結合が弱いフッ素含有シランカップリング剤は基材表面から剥離する。したがって、超音波洗浄後の基材表面における接触角を調べることにより、フッ素シランカップリング剤とその下層である非晶質炭素膜との密着性を確認することができる。
引っ張り試験条件
試験機:インストロン社 5865型
つかみ長さ:60mmストリップ幅:10mm
延伸率の測定:ビデオカメラ伸び計により試料に表示した標点間の伸び率を測定
12:枠体
14:乳剤
16:メッシュ
18:印刷パターン開口部
30:電子部品搬送装置
32:吸着コレット
34:多孔性シート34
Claims (14)
- ケイ素、酸素、又は窒素のうち少なくとも1つの元素を含有する非晶質炭素材料から成るプライマー組成物。
- 基材と、
前記基材上に直接又は間接に形成され、ケイ素、酸素、又は窒素のうち少なくとも1つの元素を含有する非晶質炭素膜層と、
を備える構造体。 - 前記非晶質炭素膜層が、窒素もしくは酸素、又は、窒素と酸素との混合物を用いてプラズマ処理される請求項2に記載の構造体。
- 前記基材が印刷用孔版に用いられるメッシュ本体である請求項2に記載の構造体。
- 前記基材がスクリーン印刷に用いられるメッシュ本体である請求項4に記載の構造体。
- 前記基材が、多孔質シート本体である請求項2に記載の構造体。
- 印刷用メッシュ本体と、
前記印刷用メッシュ本体に直接又は間接に形成され、ケイ素、酸素、又は窒素のうち少なくとも1つの元素を含有する非晶質炭素膜層と、
前記非晶質炭素膜層に形成された撥水層又は撥水・撥油層と、
を備える印刷用孔版。 - 前記撥水層又は前記撥水・撥油層が、フッ素含有カップリング剤から成る薄膜である、請求項7に記載の印刷用孔版。
- 前記撥水層又は前記撥水・撥油層が、フッ素含有シランカップリング剤から成る薄膜である、請求項7に記載の印刷用孔版。
- 前記撥水層又は撥水・撥油層が、
前記非晶質炭素膜層と水素結合及び/又は縮合反応による-O-M結合(ここで、Mは、Si、Ti、Al、及びZrから成る群より選択されるいずれかの元素。)を形成可能なカップリング剤を主成分とし、前記非晶質炭素膜に形成された第1層と、
撥水材料又は撥水・撥油材料を主成分とし、前記第1層に形成された第2層と、
を備える、
請求項7に記載の印刷用孔版。 - 前記カップリング剤が、シランカップリング剤、チタネート系カップリング剤、アルミネート系カップリング剤、及びジルコネート系カップリング剤から成る群より選択されるカップリング剤である、
請求項10に記載の印刷用孔版。 - 前記印刷用メッシュ本体に形成された乳剤層をさらに備え、
前記非晶質炭素膜層が前記乳剤層に形成された、
請求項7に記載の印刷用孔版。 - 基材を準備する工程と、
前記基材に、ケイ素、酸素、又は窒素のうち少なくとも1つの元素を含有する非晶質炭素膜層を直接又は間接に形成する工程と、
を備える構造体の製造方法。 - 前記非晶質炭素膜が、窒素もしくは酸素、又は、窒素と酸素との混合物を用いてプラズマ処理する工程をさらに備える請求項13に記載の構造体の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201280031667.7A CN103648789B (zh) | 2011-07-01 | 2012-07-02 | 底漆组合物、包括由该组合物构成的底漆层的结构体、和制备该结构体的方法 |
KR1020137029848A KR101553934B1 (ko) | 2011-07-01 | 2012-07-02 | 프라이머 조성물, 해당 조성물로 이루어지는 프라이머층을 포함하는 구조체, 및 해당 구조체의 제조 방법 |
JP2013523017A JP5802752B2 (ja) | 2011-07-01 | 2012-07-02 | プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法 |
US14/129,846 US20140130687A1 (en) | 2011-07-01 | 2012-07-02 | Primer composition, structure including primer layer composed of the composition, and method of producing the structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011147669 | 2011-07-01 | ||
JP2011-147669 | 2011-07-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013005726A1 true WO2013005726A1 (ja) | 2013-01-10 |
Family
ID=47437075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/066925 WO2013005726A1 (ja) | 2011-07-01 | 2012-07-02 | プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20140130687A1 (ja) |
JP (1) | JP5802752B2 (ja) |
KR (1) | KR101553934B1 (ja) |
CN (1) | CN103648789B (ja) |
TW (1) | TWI532794B (ja) |
WO (1) | WO2013005726A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014148479A1 (ja) * | 2013-03-19 | 2014-09-25 | 太陽化学工業株式会社 | 防汚用の非晶質炭素膜を備える構造体及び防汚用の非晶質炭素膜の形成方法 |
WO2014189026A1 (ja) * | 2013-05-20 | 2014-11-27 | 太陽化学工業株式会社 | 濡れ性を良くする表面改質処理がなされた構造体及び印刷用孔版、これらを製造する方法 |
JP2015089672A (ja) * | 2013-11-07 | 2015-05-11 | 株式会社Nbcメッシュテック | 印刷用金属メッシュ織物および印刷用スクリーン版 |
Families Citing this family (244)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US9017481B1 (en) | 2011-10-28 | 2015-04-28 | Asm America, Inc. | Process feed management for semiconductor substrate processing |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
JPWO2015115399A1 (ja) * | 2014-01-28 | 2017-03-23 | 太陽誘電ケミカルテクノロジー株式会社 | 炭素膜を備える構造体及び炭素膜を形成する方法 |
US11015245B2 (en) | 2014-03-19 | 2021-05-25 | Asm Ip Holding B.V. | Gas-phase reactor and system having exhaust plenum and components thereof |
US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
US9890456B2 (en) | 2014-08-21 | 2018-02-13 | Asm Ip Holding B.V. | Method and system for in situ formation of gas-phase compounds |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
WO2017044354A1 (en) * | 2015-09-09 | 2017-03-16 | Pepsico, Inc. | Process for providing polymers comprising hexagonal boron nitride |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10190213B2 (en) | 2016-04-21 | 2019-01-29 | Asm Ip Holding B.V. | Deposition of metal borides |
US10865475B2 (en) | 2016-04-21 | 2020-12-15 | Asm Ip Holding B.V. | Deposition of metal borides and silicides |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10714385B2 (en) | 2016-07-19 | 2020-07-14 | Asm Ip Holding B.V. | Selective deposition of tungsten |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (ko) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 가공 장치 및 그 동작 방법 |
US10643826B2 (en) | 2016-10-26 | 2020-05-05 | Asm Ip Holdings B.V. | Methods for thermally calibrating reaction chambers |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
US10229833B2 (en) | 2016-11-01 | 2019-03-12 | Asm Ip Holding B.V. | Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
KR20180068582A (ko) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
KR20180070971A (ko) | 2016-12-19 | 2018-06-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US10867788B2 (en) | 2016-12-28 | 2020-12-15 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
CN110234412A (zh) * | 2017-02-16 | 2019-09-13 | 惠普深蓝有限责任公司 | 冷凝汽化流体 |
US10529563B2 (en) | 2017-03-29 | 2020-01-07 | Asm Ip Holdings B.V. | Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures |
KR102457289B1 (ko) | 2017-04-25 | 2022-10-21 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10892156B2 (en) | 2017-05-08 | 2021-01-12 | Asm Ip Holding B.V. | Methods for forming a silicon nitride film on a substrate and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US10886123B2 (en) | 2017-06-02 | 2021-01-05 | Asm Ip Holding B.V. | Methods for forming low temperature semiconductor layers and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
US10685834B2 (en) | 2017-07-05 | 2020-06-16 | Asm Ip Holdings B.V. | Methods for forming a silicon germanium tin layer and related semiconductor device structures |
KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
US11018002B2 (en) | 2017-07-19 | 2021-05-25 | Asm Ip Holding B.V. | Method for selectively depositing a Group IV semiconductor and related semiconductor device structures |
US10541333B2 (en) | 2017-07-19 | 2020-01-21 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11139191B2 (en) | 2017-08-09 | 2021-10-05 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
KR102491945B1 (ko) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR102630301B1 (ko) | 2017-09-21 | 2024-01-29 | 에이에스엠 아이피 홀딩 비.브이. | 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치 |
US10844484B2 (en) | 2017-09-22 | 2020-11-24 | Asm Ip Holding B.V. | Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10319588B2 (en) | 2017-10-10 | 2019-06-11 | Asm Ip Holding B.V. | Method for depositing a metal chalcogenide on a substrate by cyclical deposition |
US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
US10910262B2 (en) | 2017-11-16 | 2021-02-02 | Asm Ip Holding B.V. | Method of selectively depositing a capping layer structure on a semiconductor device structure |
US11022879B2 (en) | 2017-11-24 | 2021-06-01 | Asm Ip Holding B.V. | Method of forming an enhanced unexposed photoresist layer |
JP7214724B2 (ja) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | バッチ炉で利用されるウェハカセットを収納するための収納装置 |
JP7206265B2 (ja) | 2017-11-27 | 2023-01-17 | エーエスエム アイピー ホールディング ビー.ブイ. | クリーン・ミニエンバイロメントを備える装置 |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
KR20200108016A (ko) | 2018-01-19 | 2020-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
TW202325889A (zh) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
US11018047B2 (en) | 2018-01-25 | 2021-05-25 | Asm Ip Holding B.V. | Hybrid lift pin |
USD880437S1 (en) | 2018-02-01 | 2020-04-07 | Asm Ip Holding B.V. | Gas supply plate for semiconductor manufacturing apparatus |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11840799B2 (en) | 2018-03-14 | 2023-12-12 | Nbc Meshtec Inc. | Mesh member, sieve, and screen printing plate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11088002B2 (en) | 2018-03-29 | 2021-08-10 | Asm Ip Holding B.V. | Substrate rack and a substrate processing system and method |
KR102501472B1 (ko) | 2018-03-30 | 2023-02-20 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
TW202344708A (zh) | 2018-05-08 | 2023-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
TWI816783B (zh) | 2018-05-11 | 2023-10-01 | 荷蘭商Asm 智慧財產控股公司 | 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構 |
KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
TWI819010B (zh) | 2018-06-27 | 2023-10-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
US11499222B2 (en) | 2018-06-27 | 2022-11-15 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
KR20200002519A (ko) | 2018-06-29 | 2020-01-08 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 및 반도체 장치의 제조 방법 |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) * | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) * | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10767789B2 (en) | 2018-07-16 | 2020-09-08 | Asm Ip Holding B.V. | Diaphragm valves, valve components, and methods for forming valve components |
US11053591B2 (en) | 2018-08-06 | 2021-07-06 | Asm Ip Holding B.V. | Multi-port gas injection system and reactor system including same |
US10883175B2 (en) | 2018-08-09 | 2021-01-05 | Asm Ip Holding B.V. | Vertical furnace for processing substrates and a liner for use therein |
US10829852B2 (en) | 2018-08-16 | 2020-11-10 | Asm Ip Holding B.V. | Gas distribution device for a wafer processing apparatus |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (ko) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
US11049751B2 (en) | 2018-09-14 | 2021-06-29 | Asm Ip Holding B.V. | Cassette supply system to store and handle cassettes and processing apparatus equipped therewith |
CN110970344A (zh) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
US10847365B2 (en) | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
US10811256B2 (en) | 2018-10-16 | 2020-10-20 | Asm Ip Holding B.V. | Method for etching a carbon-containing feature |
KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
USD948463S1 (en) | 2018-10-24 | 2022-04-12 | Asm Ip Holding B.V. | Susceptor for semiconductor substrate supporting apparatus |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (ko) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US11031242B2 (en) | 2018-11-07 | 2021-06-08 | Asm Ip Holding B.V. | Methods for depositing a boron doped silicon germanium film |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (ja) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム |
TWI819180B (zh) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
KR20200091543A (ko) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN111524788B (zh) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | 氧化硅的拓扑选择性膜形成的方法 |
JP2020136678A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための方法および装置 |
JP2020136677A (ja) | 2019-02-20 | 2020-08-31 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基材表面内に形成された凹部を充填するための周期的堆積方法および装置 |
KR20200102357A (ko) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법 |
KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
TW202100794A (zh) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
KR20200108243A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOC 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108248A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | SiOCN 층을 포함한 구조체 및 이의 형성 방법 |
KR20200108242A (ko) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
KR20200116855A (ko) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
US11112181B2 (en) * | 2019-04-22 | 2021-09-07 | Fria, Llc | Body cooling system |
KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
KR20200130118A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
JP2020188255A (ja) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
USD922229S1 (en) | 2019-06-05 | 2021-06-15 | Asm Ip Holding B.V. | Device for controlling a temperature of a gas supply unit |
KR20200141003A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 가스 감지기를 포함하는 기상 반응기 시스템 |
KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
JP2021015791A (ja) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | 同軸導波管を用いたプラズマ装置、基板処理方法 |
CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210010820A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
JP2021019198A (ja) | 2019-07-19 | 2021-02-15 | エーエスエム・アイピー・ホールディング・ベー・フェー | トポロジー制御されたアモルファスカーボンポリマー膜の形成方法 |
CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (ko) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
KR20210029663A (ko) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
TW202129060A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | 基板處理裝置、及基板處理方法 |
KR20210043460A (ko) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
KR20210045930A (ko) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물의 토폴로지-선택적 막의 형성 방법 |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (ko) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (ko) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
KR20210065848A (ko) | 2019-11-26 | 2021-06-04 | 에이에스엠 아이피 홀딩 비.브이. | 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법 |
CN112951697A (zh) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885692A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
CN112885693A (zh) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | 基板处理设备 |
JP2021090042A (ja) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 基板処理装置、基板処理方法 |
KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
CN112992667A (zh) | 2019-12-17 | 2021-06-18 | Asm Ip私人控股有限公司 | 形成氮化钒层的方法和包括氮化钒层的结构 |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
KR20210095050A (ko) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
TW202130846A (zh) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括釩或銦層的結構之方法 |
KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
CN113394086A (zh) | 2020-03-12 | 2021-09-14 | Asm Ip私人控股有限公司 | 用于制造具有目标拓扑轮廓的层结构的方法 |
WO2021199834A1 (ja) * | 2020-03-31 | 2021-10-07 | Toto株式会社 | 衛生設備部材 |
KR20210124042A (ko) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
TW202146689A (zh) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | 阻障層形成方法及半導體裝置的製造方法 |
TW202145344A (zh) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
KR20210132605A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
US11898243B2 (en) | 2020-04-24 | 2024-02-13 | Asm Ip Holding B.V. | Method of forming vanadium nitride-containing layer |
KR20210134226A (ko) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
KR20210141379A (ko) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
KR20210143653A (ko) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
KR20210145078A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
TW202201602A (zh) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
TW202218133A (zh) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成含矽層之方法 |
TW202217953A (zh) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
TW202204662A (zh) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
TW202212623A (zh) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成金屬氧化矽層及金屬氮氧化矽層的方法、半導體結構、及系統 |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
CN114639631A (zh) | 2020-12-16 | 2022-06-17 | Asm Ip私人控股有限公司 | 跳动和摆动测量固定装置 |
TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002067267A (ja) * | 2000-08-24 | 2002-03-05 | Citizen Watch Co Ltd | スクリーン印刷機およびそれに用いる印刷マスクの製造方法 |
JP2006161075A (ja) * | 2004-12-03 | 2006-06-22 | Shinko Seiki Co Ltd | 硬質炭素膜およびその形成方法 |
JP2006347062A (ja) * | 2005-06-17 | 2006-12-28 | Fluoro Technology:Kk | スクリーン印刷版の版膜面処理剤 |
JP2008141009A (ja) * | 2006-12-01 | 2008-06-19 | Tokyo Electron Ltd | アモルファスカーボン膜、半導体装置、成膜方法、成膜装置及び記憶媒体 |
JP2008174790A (ja) * | 2007-01-18 | 2008-07-31 | Plasma Ion Assist Co Ltd | 金属繊維織物の表面処理方法及びその物品 |
JP2009045867A (ja) * | 2007-08-21 | 2009-03-05 | Fluoro Technology:Kk | スクリーン印刷版の版面処理剤 |
JP2009274745A (ja) * | 2008-05-15 | 2009-11-26 | Hokkai Can Co Ltd | ポリエステル樹脂製容器 |
JP2010069835A (ja) * | 2008-09-22 | 2010-04-02 | Mitani Micronics Kyushu Co Ltd | スクリーン印刷用マスク及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69218811T2 (de) * | 1991-01-23 | 1997-07-17 | Matsushita Electric Ind Co Ltd | Wasser- und ölabweisender adsorbierter Film und Verfahren zu dessen Herstellung |
JP3530676B2 (ja) * | 1995-04-26 | 2004-05-24 | キヤノン株式会社 | 光受容部材の製造方法、該光受容部材、該光受容部材を有する電子写真装置及び該光受容部材を用いた電子写真プロセス |
JPH08337874A (ja) * | 1995-06-13 | 1996-12-24 | Matsushita Electric Ind Co Ltd | 基材表面被覆層及びその形成方法並びに熱交換器用フィン及びその製造方法。 |
JPH11245371A (ja) * | 1998-02-27 | 1999-09-14 | Sanyo Electric Co Ltd | マスク、及びスキージ |
AU4566400A (en) * | 1999-06-08 | 2000-12-28 | N.V. Bekaert S.A. | A doped diamond-like carbon coating |
JP2004022025A (ja) * | 2002-06-13 | 2004-01-22 | Hitachi Ltd | 磁気記録媒体及びその製造方法とそれを用いた磁気記憶装置 |
CN101378850A (zh) * | 2006-02-21 | 2009-03-04 | 应用材料股份有限公司 | 加强用于介电膜层的远程等离子体源清洁 |
JP2009211791A (ja) * | 2008-03-06 | 2009-09-17 | Hitachi Global Storage Technologies Netherlands Bv | 磁気記録媒体の製造方法及び製造装置 |
JP2011014582A (ja) * | 2009-06-30 | 2011-01-20 | Tesetsuku:Kk | 電子部品用搬送装置 |
-
2012
- 2012-07-02 JP JP2013523017A patent/JP5802752B2/ja active Active
- 2012-07-02 KR KR1020137029848A patent/KR101553934B1/ko active IP Right Grant
- 2012-07-02 WO PCT/JP2012/066925 patent/WO2013005726A1/ja active Application Filing
- 2012-07-02 CN CN201280031667.7A patent/CN103648789B/zh active Active
- 2012-07-02 US US14/129,846 patent/US20140130687A1/en not_active Abandoned
- 2012-07-02 TW TW101123848A patent/TWI532794B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002067267A (ja) * | 2000-08-24 | 2002-03-05 | Citizen Watch Co Ltd | スクリーン印刷機およびそれに用いる印刷マスクの製造方法 |
JP2006161075A (ja) * | 2004-12-03 | 2006-06-22 | Shinko Seiki Co Ltd | 硬質炭素膜およびその形成方法 |
JP2006347062A (ja) * | 2005-06-17 | 2006-12-28 | Fluoro Technology:Kk | スクリーン印刷版の版膜面処理剤 |
JP2008141009A (ja) * | 2006-12-01 | 2008-06-19 | Tokyo Electron Ltd | アモルファスカーボン膜、半導体装置、成膜方法、成膜装置及び記憶媒体 |
JP2008174790A (ja) * | 2007-01-18 | 2008-07-31 | Plasma Ion Assist Co Ltd | 金属繊維織物の表面処理方法及びその物品 |
JP2009045867A (ja) * | 2007-08-21 | 2009-03-05 | Fluoro Technology:Kk | スクリーン印刷版の版面処理剤 |
JP2009274745A (ja) * | 2008-05-15 | 2009-11-26 | Hokkai Can Co Ltd | ポリエステル樹脂製容器 |
JP2010069835A (ja) * | 2008-09-22 | 2010-04-02 | Mitani Micronics Kyushu Co Ltd | スクリーン印刷用マスク及びその製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014148479A1 (ja) * | 2013-03-19 | 2014-09-25 | 太陽化学工業株式会社 | 防汚用の非晶質炭素膜を備える構造体及び防汚用の非晶質炭素膜の形成方法 |
JPWO2014148479A1 (ja) * | 2013-03-19 | 2017-02-16 | 太陽誘電ケミカルテクノロジー株式会社 | 防汚用の非晶質炭素膜を備える構造体及び防汚用の非晶質炭素膜の形成方法 |
WO2014189026A1 (ja) * | 2013-05-20 | 2014-11-27 | 太陽化学工業株式会社 | 濡れ性を良くする表面改質処理がなされた構造体及び印刷用孔版、これらを製造する方法 |
JP6067846B2 (ja) * | 2013-05-20 | 2017-01-25 | 太陽誘電ケミカルテクノロジー株式会社 | 濡れ性を良くする表面改質処理がなされた構造体及び印刷用孔版、これらを製造する方法 |
JPWO2014189026A1 (ja) * | 2013-05-20 | 2017-02-23 | 太陽誘電ケミカルテクノロジー株式会社 | 濡れ性を良くする表面改質処理がなされた構造体及び印刷用孔版、これらを製造する方法 |
JP2015089672A (ja) * | 2013-11-07 | 2015-05-11 | 株式会社Nbcメッシュテック | 印刷用金属メッシュ織物および印刷用スクリーン版 |
Also Published As
Publication number | Publication date |
---|---|
US20140130687A1 (en) | 2014-05-15 |
JPWO2013005726A1 (ja) | 2015-02-23 |
TWI532794B (zh) | 2016-05-11 |
KR20140000347A (ko) | 2014-01-02 |
JP5802752B2 (ja) | 2015-11-04 |
CN103648789A (zh) | 2014-03-19 |
TW201305282A (zh) | 2013-02-01 |
CN103648789B (zh) | 2015-11-25 |
KR101553934B1 (ko) | 2015-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5802752B2 (ja) | プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法 | |
JP6121326B2 (ja) | プライマー薄膜を含む印刷用孔版及び該印刷用孔版の製造方法 | |
WO2011148718A1 (ja) | 非晶質炭素膜を有するスクリーン印刷用孔版及びその製造方法 | |
JP6412547B2 (ja) | 濡れ性を良くする表面改質処理がなされた構造体及び印刷用孔版、これらを製造する方法 | |
JP2016501988A (ja) | 耐食皮膜を用意する方法 | |
US20170001430A1 (en) | Printing stencil and method for manufacturing the same | |
KR20230023820A (ko) | 원자 층 증착에 의해 도포되는 내화학약품성 다층 코팅 | |
US20150314588A1 (en) | Mesh structure and method for manufacturing the same | |
KR20180115812A (ko) | 유체 분리용 복합 다공질막, 이의 제조 방법 및 필터 | |
JP2017019279A (ja) | 撥水撥油性表面を有する構造体及びその製造方法 | |
Maria Chong et al. | Soft imprinting: creating highly ordered porous anodic alumina templates on substrates for nanofabrication | |
JP2011230505A (ja) | 表面濡れ性改質を行った非晶質炭素膜構造体、およびその製造方法 | |
CN110747449A (zh) | 一种用于电子屏幕的自洁疏水膜层的制备方法 | |
CN110214080A (zh) | 阻气性膜 | |
JP4844778B2 (ja) | セラミックコンデンサ−製造用離型フィルムおよびその製造法 | |
JP5332940B2 (ja) | セラミックコンデンサグリーンシート製造用高平滑性離型フィルムとその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12807439 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013523017 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20137029848 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14129846 Country of ref document: US |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DD 08/04/2014) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12807439 Country of ref document: EP Kind code of ref document: A1 |