KR102501472B1 - 기판 처리 방법 - Google Patents

기판 처리 방법 Download PDF

Info

Publication number
KR102501472B1
KR102501472B1 KR1020180037762A KR20180037762A KR102501472B1 KR 102501472 B1 KR102501472 B1 KR 102501472B1 KR 1020180037762 A KR1020180037762 A KR 1020180037762A KR 20180037762 A KR20180037762 A KR 20180037762A KR 102501472 B1 KR102501472 B1 KR 102501472B1
Authority
KR
South Korea
Prior art keywords
gas
substrate
pattern structure
oxygen
supplied
Prior art date
Application number
KR1020180037762A
Other languages
English (en)
Other versions
KR20190114682A (ko
Inventor
최승우
Original Assignee
에이에스엠 아이피 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠 아이피 홀딩 비.브이. filed Critical 에이에스엠 아이피 홀딩 비.브이.
Priority to KR1020180037762A priority Critical patent/KR102501472B1/ko
Priority to US16/255,639 priority patent/US10867786B2/en
Priority to SG10201901224S priority patent/SG10201901224SA/en
Priority to TW108105002A priority patent/TWI736840B/zh
Priority to JP2019062296A priority patent/JP6782320B2/ja
Priority to CN201910250125.2A priority patent/CN110318041B/zh
Publication of KR20190114682A publication Critical patent/KR20190114682A/ko
Application granted granted Critical
Publication of KR102501472B1 publication Critical patent/KR102501472B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

기판 상에 형성되는 박막 하부의 패턴 구조물의 손상이 위치별로 균일하게 유지될 수 있는 기판 처리 방법이 개시된다. 기판 처리 방법은, 반응 물질과 반응하는 패턴 구조물이 형성된 기판 상에 소스 물질을 공급하는 단계 및 플라즈마 분위기 하에서 공급 유닛의 적어도 중심 유입구를 통해 상기 반응 물질을 공급하는 단계를 포함하고, 상기 반응 물질을 공급하는 단계 동안, 상기 반응 물질과 다른 차단 물질이 상기 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급된다.

Description

기판 처리 방법{Substrate processing method}
본 발명은 기판 처리 방법에 관한 것으로, 보다 구체적으로는 박막 층의 특성을 개선시킬 수 있는 기판 처리 방법에 관한 것이다.
기판 상에 박막을 증착 및 식각을 하는 기판 처리 과정에 있어서, 기판 각 부분의 균일도를 일정하게 유지하는 것은 반도체 소자의 수율(yield)을 높이기 위해 매우 중요하다. 특히 플라즈마 공정에 있어 활성 라디칼에 의한 하부막 손상이 발생하게 되는데, 기판의 각 부분별로 손상 정도가 달라지는 경우가 발생한다. 이러한 손상의 불균일성으로 인해 박막 및 소자의 특성이 위치별로 균일하지 않게 될 수 있다. 즉, 전체적으로 손상 균일도가 저하될 경우 소자의 수율 관리에 큰 영향을 미치게 된다.
따라서 본 발명은 기판 상에 균일한 특성의 박막을 증착하는 방법을 개시하며 구체적으로는 플라즈마 증착 공정에 있어 기판 상 각 부분별로 플라즈마의 밀도를 제어하여 기판상 각 부분별 박막의 특성을 균일하게 제어할 수 있는 방법을 제공하고자 한다.
본 발명의 기술적 사상에 따른 실시예들의 일 측면에 따르면, 기판 처리 방법은 패턴 구조물이 형성된 기판 상에 제1 기체를 공급하는 단계; 상기 제1 기체를 퍼지하는 단계; 상기 제1 기체와 반응성을 갖는 제2 기체 및 제3 기체를 플라즈마 분위기 하에서 공급하여 상기 패턴 구조물 상에 박막을 형성하는 단계; 및 상기 제2 기체를 퍼지하는 단계를 포함하고, 상기 박막을 형성하는 단계 동안, 상기 제2 기체는 기체 공급 유닛의 적어도 중심 기체 유입구를 통해 공급되고, 상기 제3 기체는 상기 기체 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급되며, 상기 제3 기체는 상기 제1 기체 및 상기 제2 기체와 다른 기체이며, 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다.
상기 기판 처리 방법의 일 예에 따르면, 상기 제3 기체가 상기 추가 기체 유입구를 통해 공급되어 기판 가장자리의 유량이 증가되고, 그에 따라 기판 중심 부근의 라디칼 밀도가 증가될 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제3 기체는 질소 성분을 포함할 수 있다. 예를 들어, 상기 제3 기체는 아산화 질소 기체 및 질소 기체 중 적어도 하나를 포함할 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제2 기체는 산소 성분을 포함하고, 상기 제3 기체는 질소 성분을 포함하며, 상기 박막은 섭씨 100도 이하의 온도 조건에서 형성된 산화막일 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제2 기체는 산소이고, 상기 제3 기체는 아산화질소이며, 상기 플라즈마 분위기에서 상기 산소 기체와 상기 아산화질소 기체의 유량비는 1:0.625 내지 1:1.25일 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제2 기체는 산소이고, 상기 제3 기체는 질소이며, 상기 플라즈마 분위기에서 상기 산소 기체와 상기 질소 기체의 유량비는 1:0.625 내지 1:1.25일 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 플라즈마 분위기 하에서 상기 패턴 구조물의 손상이 발생할 수 있다. 상기 패턴 구조물의 손상은 상기 추가 기체 유입구를 통해 공급되는 상기 제3 기체에 의해 변화할 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 패턴 구조물은 스핀 온 하드마스크(SOH)를 포함할 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 기판 처리 방법은 상기 패턴 구조물 상에 형성된 상기 박막을 이용하여 수행되는 더블 패터닝 공정 또는 쿼드러플 패터닝 공정을 더 포함할 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 플라즈마 분위기 하에서, 상기 제2 기체는 이온화되고, 상기 제3 기체는 이온화되지 않을 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제1 기체는 제1 온도에서 상기 제2 기체와는 반응하고, 상기 제1 기체는 상기 제1 온도에서 상기 제3 기체와는 반응하지 않을 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 제3 기체는 상기 제1 기체 및 상기 제2 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 다른 측면에 따르면, 기판 처리 방법은 산소와 반응하는 패턴 구조물이 형성된 기판 상에 실리콘 함유 기체를 공급하는 단계; 상기 실리콘 함유 기체를 퍼지하는 단계; 산소 함유 기체 및 질소 함유 기체를 섭씨 100도 이하의 플라즈마 분위기 하에서 공급하여 상기 패턴 구조물 상에 실리콘 산화막을 형성하는 단계; 및 상기 산소 함유 기체를 퍼지하는 단계를 포함하고, 적어도 상기 실리콘 산화막을 형성하는 단계 동안, 상기 산소 함유 기체는 기체 공급 유닛의 적어도 중심 기체 유입구를 통해 공급되고, 상기 질소 함유 기체는 상기 기체 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급될 수 있다.
상기 기판 처리 방법의 일 예에 따르면, 상기 산소와 반응하는 패턴 구조물은 스핀 온 하드마스크이고, 상기 산소 함유 기체는 산소이고, 상기 질소 함유 기체는 아산화질소이며, 상기 플라즈마 분위기에서 상기 산소 기체와 상기 아산화질소 기체의 유량비는 1:0.625 내지 1:1.25일 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 실리콘 산화막을 형성하는 단계 동안, 상기 기판의 상기 패턴 구조물 상에 흡착된 실리콘 함유 기체는 산소 함유 기체와는 반응하고 질소 함유 기체와는 반응하지 않을 수 있다.
상기 기판 처리 방법의 다른 예에 따르면, 상기 질소 함유 기체가 상기 추가 기체 유입구를 통해 공급되어 기판 가장자리의 유량이 증가하고, 상기 기판 가장자리의 유량 증가로 인해 기판 가장자리 부분에서의 패턴 구조물과 반응하는 라디칼 밀도는 감소하며, 상기 기판 가장자리의 유량 증가로 인해 기판 중심 부근에서의 패턴 구조물과 반응하는 라디칼 밀도는 증가하고, 결과적으로 기판 가장자리 부분에서의 패턴 구조물의 손상과 기판 중심 부근에서의 패턴 구조물의 손상이 균일해질 수 있다.
본 발명의 기술적 사상에 따른 실시예들의 또 다른 측면에 따르면, 기판 처리 방법은 반응 물질과 반응하는 패턴 구조물이 형성된 기판 상에 소스 물질을 공급하는 단계; 및 플라즈마 분위기 하에서 공급 유닛의 적어도 중심 유입구를 통해 상기 반응 물질을 공급하는 단계를 포함하고, 상기 반응 물질을 공급하는 단계 동안, 상기 반응 물질과 다른 차단 물질이 상기 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급되며, 상기 차단 물질에 의해 기판 가장자리의 유량이 증가되고, 그에 따라 기판 중심 부근의 반응 물질의 라디칼 밀도가 증가될 수 있다.
상기 기판 처리 방법의 일 예에 따르면, 상기 차단 물질은 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 흐름도이다.
도 2는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 단면도이다.
도 3 내지 도 6은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법이 적용되는 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 7은 기판 상의 SOH 막 위에 SiO2 막을 증착할 때 플라즈마 라디칼에 의한 하부 SOH 막의 손상 정도를 보여준다.
도 8은 27MHz, 600 와트(watt)의 플라즈마 조건 하에서 기판 상의 SOH 구조물 상에 SiO2 막을 증착할 때 기판의 각 영역별로 SOH 손실 정도를 보여주고 있다.
도 9는 또 다른 실시예로서, N2O대신 N2기체를 공급했을 때 기판 상에서 SOH 손실의 균일성이 변하는 것을 보여주고 있다.
도 10은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 단면도이다.
이하, 첨부된 도면을 참조하여 본 발명의 실시예들을 설명하기로 한다.
본 발명의 실시예들은 당해 기술 분야에서 통상의 지식을 가진 자에게 본 발명을 더욱 완전하게 설명하기 위하여 제공되는 것이며, 아래의 실시예들은 여러 가지 다른 형태로 변형될 수 있으며, 본 발명의 범위가 아래의 실시예들로 한정되는 것은 아니다. 오히려, 이들 실시예는 본 개시를 더욱 충실하고 완전하게 하며 당업자에게 본 발명의 사상을 완전하게 전달하기 위하여 제공되는 것이다.
본 명세서에서 사용된 용어는 특정 실시예를 설명하기 위하여 사용되며, 본 발명을 제한하기 위한 것이 아니다. 본 명세서에서 사용된 바와 같이 단수 형태는 문맥상 다른 경우를 분명히 지적하는 것이 아니라면, 복수의 형태를 포함할 수 있다. 또한, 본 명세서에서 사용되는 경우 "포함한다(comprise)" 및/또는 "포함하는(comprising)"은 언급한 형상들, 숫자, 단계, 동작, 부재, 요소 및/또는 이들 그룹의 존재를 특정하는 것이며, 하나 이상의 다른 형상, 숫자, 동작, 부재, 요소 및/또는 그룹들의 존재 또는 부가를 배제하는 것이 아니다. 본 명세서에서 사용된 바와 같이, 용어 "및/또는"은 해당 열거된 항목 중 어느 하나 및 하나 이상의 모든 조합을 포함한다.
본 명세서에서 제1, 제2 등의 용어가 다양한 부재, 영역 및/또는 부위들을 설명하기 위하여 사용되지만, 이들 부재, 부품, 영역, 층들 및/또는 부위들은 이들 용어에 의해 한정되어서는 안됨은 자명하다. 이들 용어는 특정 순서나 상하, 또는 우열의 의미하지 않으며, 하나의 부재, 영역 또는 부위를 다른 부재, 영역 또는 부위와 구별하기 위하여만 사용된다. 따라서, 이하 상술할 제1 부재, 영역 또는 부위는 본 발명의 가르침으로부터 벗어나지 않고서도 제2 부재, 영역 또는 부위를 지칭할 수 있다.
본 개시서에서, "기체(가스)"는 증발된 고체 및/또는 액체를 포함할 수 있으며, 단일 기체 또는 기체들의 혼합물로 구성될 수 있다. 본 개시서에서, 기체 공급 유닛을 통하여 반응 챔버로 도입된 공정 기체는 전구체 기체 및 부가성 기체를 포함할 수 있다. 상기 전구체 기체 및 상기 부가성 기체는 전형적으로 혼합 기체로서 또는 별도로 반응 공간으로 도입될 수 있다. 상기 전구체 기체는 불활성 기체와 같은 캐리어 기체와 함께 도입될 수 있다. 상기 부가성 기체는 반응물 기체 및 불활성 기체와 같은 희석 기체를 포함할 수 있다. 상기 반응물 기체 및 상기 희석 기체는 혼합하여 또는 별도로 반응 공간으로 도입될 수 있다. 전구체는 둘 이상의 전구체들로 구성될 수 있으며, 그리고 반응물 기체는 둘 이상의 반응물 기체들로 구성될 수 있다. 상기 전구체는 기판 상에 화학흡착된 그리고 유전체 막의 매트릭스의 주요 구조를 구성하는 전형적으로 메탈로이드(metalloid) 또는 금속 원소를 함유하는 기체며, 퇴적을 위한 상기 반응물 기체는 상기 기체가 상기 기판 상에서 원자층 또는 단층(monolayer)을 고정하기 위해 여기될 때 기판 상에 화학흡착된 상기 전구체와 반응하는 기체이다. "화학흡착(chemisorption)"은 화학적 포화 흡착을 지칭한다. 상기 공정 기체 외의 기체, 즉 상기 기체 공급 유닛을 통하여 통과하지 않고 도입된 기체가 상기 반응 공간을 실링(sealing)하기 위해 사용될 수 있으며, 이것은 불활성 기체와 같은 시일 기체(seal gas)를 포함한다. 일부 실시예들에서, "막(film)"은 전체 타겟 또는 관련된 표면을 피복하도록 실질적으로 핀홀들 없이 두께 방향에 수직한 방향으로 연속적으로 연장되는 층, 또는 단순히 타겟 또는 관련된 표면을 피복하는 층을 지칭한다. 일부 실시예들에서 "층(layer)"은 표면 상에 형성된 어떠한 두께를 갖는 구조물, 또는 막의 동의어, 또는 비막(non-film) 구조물을 지칭한다. 막 또는 층은 어떠한 특성들을 갖는 불연속적 단일 막 또는 층, 또는 다중의 막들 또는 층들로 구성될 수 있으며, 그리고 인접한 막들 또는 층들 사이의 경계는 분명하거나 또는 분명하지 않을 수 있으며, 그리고 물리적, 화학적, 및/또는 어떤 다른 특성들, 형성 공정들 또는 시퀀스, 및/또는 인접한 막들 또는 층들의 기능들 또는 목적들에 기초하여 설정될 수 있다.
본 개시서에서, "동일한 물질"이라는 표현은, 주요 구성 성분이 동일함을 의미하는 것으로 해석되어야 한다. 예를 들어, 제1 층과 제2 층은 모두 실리콘 질화층이고 동일한 물질로 형성될 경우, 제1 층은 Si2N, SiN, Si3N4, 및 Si2N3을 포함하는 그룹으로부터 선택될 수 있고, 제2 층 역시 상기 그룹으로부터 선택될 수 있으나 그 구체적인 막일은 제1 층과 상이할 수 있다.
부가적으로, 본 개시서에서, 실행 가능한 범위가 정례적인 작업에 기초하여 결정될 수 있다는 것에 따라서 어떠한 두 가지의 변수가 상기 변수의 실행가능한 범위를 구성할 수 있으며, 어떠한 지시된 범위는 종료점들을 포함하거나 배제할 수 있다. 부가적으로, 어떠한 지시된 변수들의 값들은(그것들이 "약(about)"으로 지시되었거나 아니거나 상관없이) 정확한 값들 또는 근사값들을 지칭할 수 있으며, 등가물을 포함할 수 있으며, 그리고 일부 실시예들에서 평균값, 중앙값, 대표값, 다수값 등을 지칭할 수 있다.
조건들 및/또는 구조들이 특정되지 않은 본 개시서에서, 통상의 기술자는 관례적인 실험의 문제로서, 본 개시서의 견지에서 이러한 조건들 및/또는 구조들을 용이하게 제공할 수 있다. 모든 개시된 실시예들에서, 하나의 실시예에서 사용된 어떠한 구성 요소는 의도된 목적들을 위해, 여기에 명시적으로, 필연적으로 또는 본질적으로 개시된 것들을 포함하여, 그것에 등가적인 어떠한 구성 요소들로 대체될 수 있다, 나아가, 본 발명은 장치들 및 방법들에 동일하게 적용될 수 있다.
이하, 본 발명의 기술적 사상에 따른 실시예들을 개략적으로 도시하는 도면들을 참조하여 설명한다. 도면들에 있어서, 예를 들면, 제조 기술 및/또는 공차에 따라, 도시된 형상의 변형들이 예상될 수 있다. 따라서, 본 발명의 실시예는 본 명세서에 도시된 영역의 특정 형상에 제한된 것으로 해석되어서는 아니 되며, 예를 들면 제조상 초래되는 형상의 변화를 포함하여야 한다.
도 1은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 흐름도이다.
도 1을 참조하면, 패턴 구조물이 형성된 기판 상에 제1 물질이 공급된다(S10). 제1 물질은 예를 들어 소스 물질일 수 있으며, 추후 공급되는 제2 물질과 반응성을 갖는 물질을 포함할 수 있다. 제1 물질은 기체일 수 있고, 선택적인 실시예에서 액체일 수도 있으며, 이외에 기체와 액체 사이의 상태의 물질일 수도 있다. 제1 물질은 패턴 구조물이 형성된 기판 상에 공급될 수 있다. 따라서 제1 물질은 패턴 구조물의 상면과 하면, 그리고 상면과 하면을 연결하는 측면 상에 도포될 수 있다.
이후, 기판 상에 제2 물질이 공급된다(S20). 제2 물질은 예를 들어 반응 물질일 수 있으며, 패턴 구조물은 반응 물질과 반응성을 갖는 물질을 포함할 수 있다. 예를 들어, 상기 패턴 구조물은 포토레지스트를 포함할 수 있다. 제2 물질은 기체일 수 있고, 선택적인 실시예에서 액체일 수도 있으며, 이외에 기체와 액체 사이의 상태의 물질일 수도 있다. 제2 물질은 플라즈마 분위기 하에서 공급될 수 있다. 또한 제2 물질은 공급 유닛(예를 들어, 기체 공급 유닛)을 통해 적어도 기판 중심 부근에 공급될 수 있다. 예를 들어, 제2 물질은 공급 유닛의 중심 유입구를 통해 기판 중심 부분에 공급될 수 있다(S23). 추가적으로, 제2 물질은 공급 유닛의 다른 유입구를 통해 기판 중심 외의 부분에도 공급될 수 있다.
제2 물질이 공급되는 동안 제2 물질과 다른 차단 물질도 기판 상에 공급될 수 있다(S20). 차단 물질은 반응 물질이 기판의 가장자리 부근에 집중되는 현상(및 그에 따라 기판 상의 패턴 구조물의 가장자리 부근이 많이 손상되는 현상)을 방지하는 기능을 수행할 수 있다. 차단 물질은 제1 물질 및 제2 물질과 다른 물질을 포함할 수 있다.
예를 들어, 차단 물질은 제1 물질의 이온화 에너지 및 제2 물질의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다. 선택적인 실시예에서, 차단 물질은 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다. 이러한 높은 이온화 에너지를 갖는 차단 물질의 공급을 통해 기판 상의 패턴 구조물의 가장자리 부근에서의 라디칼 생성이 억제될 수 있다. 따라서, 상기 라디칼과 반응성을 갖는 패턴 구조물의 손상이 방지될 수 있다.
전술한 바와 같이, 차단 물질은 기판 가장자리 부근에서의 반응 물질의 집중(및 그로 인한 라디칼 생성)을 차단하기 위해 공급되는 물질이다. 이를 위해, 예를 들어 차단 물질은 공급 유닛의 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급될 수 있다(S25). 추가 기체 유입구는 공급 유닛의 중심 기체 유입구와 공급 유닛의 가장자리 사이에 위치할 수 있다. 차단 물질에 의해, 기판 가장자리의 유량이 증가될 수 있다. 따라서 가장자리 부근의 반응 물질의 라디칼 밀도가 상대적으로 감소할 수 있다. 다른 한편으로, 차단 물질이 기판 가장자리에 공급됨으로써 기판 중심 부근의 반응 물질의 라디칼 밀도에 대한 차폐 효과가 발생할 수 있다. 따라서, 기판 중심 부근의 반응 물질의 라디칼 밀도가 증가될 수 있다.
도 2는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 단면도이다. 이 실시예들에 따른 기판 처리 방법은 전술한 실시예들에 따른 기판 처리 방법의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 2를 참조하면, 먼저 패턴 구조물이 형성된 기판 상에 제1 기체가 공급된다(S50). 예를 들어 패턴 구조물은 산소와 반응하는 물질을 포함할 수 있고, 상기 반응에 의해 패턴 구조물의 일부가 제거될 수 있다. 다른 실시예에서, 패턴 구조물은 산소 이외의 물질(예를 들어 질소)와 반응하는 물질을 포함할 수도 있다. 예를 들어, 패턴 구조물은 스핀 온 하드마스크(SOH)를 포함할 수 있다.
제1 기체는 전술한 바와 같이 소스 기체로서, 제1 기체가 반응 공간으로 공급되면 제1 기체는 기판 상에 흡착될 수 있다. 이후, 제1 기체가 퍼지된다(S60). 제1 기체는 기판 상에 형성하고자 하는 박막의 구성 성분을 포함할 수 있다. 예를 들어, 기판 상에 실리콘 산화막을 형성하고자 하는 경우, 제1 기체는 실리콘 함유 기체일 수 있다.
제1 기체가 퍼지된 이후, 제2 기체 및 제3 기체가 공급된다(S70). 제2 기체 및 제3 기체는 플라즈마 분위기 하에서 공급될 수 있다. 상기 플라즈마 분위기의 온도는 섭씨 100도 이하일 수 있고, 보다 구체적인 예에서 섭씨 50도 이하일 수 있다. 상기 플라즈마의 주파수는 예를 들어 27Mhz일 수 있고, 플라즈마의 전력은 600W일 수 있다. 그러나 본 발명은 전술한 파라미터에 제한되지 않고 다양한 파라미터로 조절될 수 있음에 유의한다.
제2 기체는 제1 기체와 반응성을 갖는 반응 기체일 수 있다. 반면에, 제3 기체는 제1 기체와 반응하지 않는 기체일 수 있다. 기판 상에 흡착된 제1 기체가 제2 기체의 공급에 의해 제2 기체와 반응함으로써, 패턴 구조물 상에 박막이 형성될 수 있다. 기판 상에 흡착된 제1 기체는 제3 기체와는 반응하지 않기 때문에, 패턴 구조물 상에 형성된 박막은 제3 기체의 성분을 포함하지 않을 수 있다.
제3 기체는 제1 기체 및 제2 기체와 다른 기체일 수 있다. 박막에 제3 기체의 성분이 포함되지 않도록 하기 위해, 제3 기체는 높은 이온화 에너지를 갖는 물질로 선택될 수 있다. 예를 들어, 제3 기체는 제1 기체의 이온화 에너지 및/또는 제2 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다. 선택적인 실시예에서, 제3 기체는 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 가질 수 있다. 그에 따라 박막 형성 단계 동안, 플라즈마 분위기 하에서, 제2 기체는 이온화되고, 반면에 제3 기체는 이온화되지 않을 수 있다.
예를 들어, 제1 기체가 실리콘 함유 기체이고 형성하고자 하는 박막이 실리콘 산화막인 경우, 제2 기체는 산소 함유 기체일 수 있고, 제3 기체는 질소 함유 기체일 수 있다. 예를 들어, 제3 기체는 아산화 질소 기체 및 질소 기체 중 적어도 하나를 포함할 수 있다.
이 경우, 실리콘 산화막을 형성하는 동안, 기판의 패턴 구조물 상에 흡착된 실리콘 함유 기체는 산소 함유 기체와는 반응하고 질소 함유 기체와는 반응하지 않을 수 있다. 이는 질소 함유 기체가 실리콘 함유 기체의 이온화 에너지 및 산소 함유 기체의 이온화 에너지보다 높은 에너지를 갖기 때문일 수 있다. 즉, 플라즈마 분위기 하에서 산소 함유 기체만이 이온화됨으로써 기판 상에 흡착된 실리콘 함유 기체와 반응하여 실리콘 산화막이 형성될 수 있고, 실리콘 질화막 및/또는 실리콘 산질화막은 형성되지 않을 수 있다.
일 예에서, 제2 기체가 산소 기체이고 제3 기체가 아산화질소 기체인 경우, 산소 기체와 아산화질소 기체의 유량비는 1:0.625 내지 1:1.25일 수 있다. 예를 들어, 산소 기체가 공급되는 유량이 160 sccm인 경우, 아산화질소 기체의 유량은 100sccm 내지 200 sccm일 수 있다. 다른 예에서, 제2 기체가 산소 기체이고 제3 기체가 질소 기체인 경우, 산소 기체와 질소 기체의 유량비는 1:0.625 내지 1:1.25일 수 있다. 예를 들어, 산소 기체가 공급되는 유량이 160 sccm인 경우, 질소 기체의 유량은 100sccm 내지 200 sccm일 수 있다. 그러나 본 발명은 전술한 파라미터에 제한되지 않고 다양한 파라미터로 조절될 수 있음에 유의한다.
비록 전술한 실시예들이 실리콘 산화막을 형성하기 위한 공정을 기준으로 설명되었지만, 이는 본 발명을 제한하지 않음에 유의한다. 본 발명은 임의의 산화막을 형성하기 위한 공정일 수 있고, 이 경우 제2 기체는 산소 성분을 포함하고, 제3 기체는 질소 성분을 포함할 수 있다. 다른 실시예에서, 본 발명은 임의의 질화막을 형성하기 위한 공정일 수도 있을 것이다.
선택적인 실시예에서, 플라즈마 분위기의 온도 파라미터는 제3 기체의 반응성을 제한하는 요소가 될 수 있다. 예를 들어, 플라즈마 분위기는 제1 온도로 설정될 수 있는데, 이 경우 제1 기체(즉, 패턴 구조물 상에 흡착된 제1 기체)는 제1 온도에서 제2 기체와 반응하고, 반면에 제1 기체는 제1 온도에서 제3 기체와 반응하지 않을 수 있다. 상기 제1 온도는 예를 들어 섭씨 100도 이하의 온도일 수 있다.
예를 들어, 섭씨 100도 이하의 온도 조건의 플라즈마 분위기에서 공급되는 산소 기체는 기판의 패턴 구조물 상에 흡착된 실리콘 함유 기체와 반응하여 실리콘 산화막을 형성할 수 있다. 반면에 섭씨 100도 이하의 온도 조건의 플라즈마 분위기에서 공급되는 질소 기체 및/또는 아산화실소 기체는 기판의 패턴 구조물 상에 흡착된 실리콘 함유 기체와 반응하지 않을 수 있다.
박막을 형성하는 단계 동안, 제2 기체는 기체 공급 유닛의 적어도 중심 기체 유입구를 통해 공급될 수 있다(S73). 반면에 제3 기체는 기체 공급 유닛의 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급될 수 있다(S75). 제3 기체가 추가 기체 유입구를 통해 공급됨으로써 기판 가장자리의 유량이 증가되고, 그에 따라 기판 중심 부근의 라디칼 밀도가 증가될 수 있다. 이는 기판 중심 부분의 손상의 증가로 귀결될 수 있다.
보다 구체적으로, 플라즈마 분위기 하에서 패턴 구조물과 반응성을 갖는 제2 기체가 공급되는 경우 제2 기체의 라디칼이 패턴 구조물과 반응함으로써 패턴 구조물이 제거될 수 있다. 이러한 패턴 구조물의 손상은 제2 기체가 공급되는 위치에 의해 영향을 받을 수도 있지만, 반응에 관여하지 않는 제3 기체가 공급되는 위치에 의해 영향을 받을 수도 있다. 특히, 제3 기체가 추가 기체 유입구를 통해 공급될 경우 가장자리에서 패턴 구조물과 반응할 수 있는 라디칼의 생성이 억제될 수 있고, 따라서 기판 가장자리에 위치하는 패턴 구조물의 손상이 감소할 수 있다.
예를 들어, 제1 기체가 실리콘 함유 기체이고, 제2 기체가 산소 함유 기체이며, 제3 기체가 질소 함유 기체인 경우, 산소 함유 기체는 적어도 중심 기체 유입구를 통해 공급될 수 있다. 질소 함유 기체는 기체 공급 유닛의 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급될 수 있다.
이 경우, 질소 함유 기체가 상기 추가 기체 유입구를 통해 공급되어 기판 가장자리의 유량이 증가할 수 있다. 이러한 기판 가장자리의 유량 증가로 인해, 기판 가장자리 부분에서의 패턴 구조물과 반응하는 라디칼 밀도는 감소할 수 있다. 반면에, 기판 가장자리의 유량 증가로 인해, 기판 중심 부근에서의 패턴 구조물과 반응하는 라디칼 밀도는 증가할 수 있다. 결과적으로 기판 가장자리 부분에서의 패턴 구조물의 손상은 감소하고, 기판 중심 부근에서의 패턴 구조물의 손상은 증가할 수 있고, 결과적으로 양자가 균일해질 수 있다.
선택적인 실시예에서, 산소 함유 기체는 중심 기체 유입구뿐만 아니라 추가 기체 유입구를 통해서도 공급될 수 있다. 즉, 기판 중심 부근과 가장자리 부근의 패턴 구조물의 손상의 편차를 조절하기 위해, 추가 기체 유입구를 통해 패턴 구조물과 반응성을 갖는 제2 기체(예를 들어, 산소 함유 기체)를 공급할 수도 있고, 패턴 구조물과 반응성을 갖지 않는 제3 기체(예를 들어, 질소 함유 기체)를 공급할 수도 있다.
제2 기체 및 제3 기체가 공급되어 패턴 구조물 상에 박막이 형성된 후, 제2 기체 및 제3 기체가 퍼지된다. 이로써 패턴 구조물 상에 박막을 형성하기 위한 일 사이클이 완료되며, 상기 사이클은 소정 횟수 반복될 수 있다. 상기 사이클이 반복됨으로써 패턴 구조물 상에 형성된 박막의 두께가 증가할 수 있다.
패턴 구조물 상에 형성된 박막은 더블 패터닝 공정 또는 쿼드러플 패터닝 공정에 이용될 수 있다. 즉, 추후 공정에서 패턴 구조물은 제거되고 패턴 구조물의 측벽에 형성된 상기 박막이 마스크의 역할을 수행하여 기판이 패터닝될 수 있다.
전술한 실시예들에서 설명한 바와 같이, 퍼지 기체의 공급은 기체를 전환하는 과정에서 단속적으로 수행될 수 있다. 예를 들어, 제1 기체의 퍼지를 위한 퍼지 기체는, 제1 기체의 공급 단계와 제2 기체 및 제3 기체 공급 단계 사이에 단속적으로 공급될 수 있다. 또한 제2 기체 및 제3 기체의 퍼지를 위한 퍼지 기체는, 제2 기체 및 제3 기체 공급 단계와 다음 사이클에서의 제1 기체의 공급 단계 사이에 공급될 수 있다.
선택적인 실시예에서, 퍼지 기체의 공급은 박막 형성 공전 전반에 걸쳐 연속적으로 수행될 수 있다. 예를 들어, 제1 기체의 퍼지를 위한 퍼지 기체는 공정 과정에서 계속적으로 공급될 수 있다. 이 경우 제1 기체 공급 단계 이후 제2 기체 및 제3 기체 공급 단계까지 소정의 기간 동안 다른 기체를 공급하지 않음으로써, 제1 기체의 퍼지가 수행될 수 있다. 또한 제2 및 제3 기체의 공급 단계 이후 다음 사이클의 제1 기체 공급 단계까지 소정의 기간 동안 다른 기체를 공급하지 않음으로써, 제2 기체 및 제3 기체의 퍼지가 수행될 수 있다.
퍼지 기체와 마찬가지로, 제3 기체의 공급 역시, 단속적으로 수행될 수 있다. 예를 들어, 제3 기체는, 제2 기체 공급 단계와 다음 사이클에서의 제1 기체의 공급 단계 사이에 공급될 수 있다. 또한, 제3 기체의 공급은 연속적으로 수행될 수도 있다. 다시 말해, 제3 기체는 박막 형성 공전 전반에 걸쳐 연속적으로 공급될 수 있다.
도 3은 본 발명의 기술적 사상에 의한 실시예들에 따른 기판 처리 방법이 적용되는 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다.
도 3을 참조하면, 기판 처리 장치는 격벽(110), 기체 공급 유닛(120), RF 로드(130), 및 배기 통로(140)를 포함할 수 있다. 본 명세서에서 설명된 기판 처리 장치의 예로서 반도체 또는 디스플레이 기판의 증착 장치를 들 수 있으나, 본 발명은 이에 제한되지 않음에 유의한다. 기판 처리 장치는 박막 형성을 위한 물질의 퇴적을 수행하는데 필요한 여하의 장치일 수도 있고, 물질의 식각 내지 연마를 위한 원료가 균일하게 공급되는 장치를 지칭할 수도 있다. 이하에서는 편의상 기판 처리 장치가 반도체 증착 장치임을 전제로 설명하기로 한다.
격벽(110)은 반응기의 구성요소일 수 있다. 다시 말해, 격벽(110) 구조에 의해 기판의 처리(예를 들어, 증착, 식각, 연마)를 위한 반응 공간이 형성될 수 있다. 예를 들어, 격벽(110)은 반응기 측벽 및/또는 반응기 상벽을 포함할 수 있다. 격벽(110) 중 반응기 상벽 부분은 기체 공급 채널(150)을 제공할 수 있고, 상기 기체 공급 채널(150)을 통해 소스 가스, 퍼지 가스, 및/또는 반응 가스가 공급될 수 있다.
기체 공급 유닛(120)은 기체 공급 채널(150)에 연결될 수 있다. 기체 공급 유닛(120)은 반응기에 고정될 수 있다. 예를 들어, 기체 공급 유닛(120)은 고정 부재(미도시)를 통해 격벽(110)에 고정될 수 있다. 기체 공급 유닛(120)은 반응 공간(160) 내의 피처리체에 기체를 공급하도록 구성될 수 있다. 예를 들어, 기체 공급 유닛(120)은 샤워헤드 어셈블리일 수 있다.
기체 공급 유닛(120) 내부에는 기체 공급 채널(150)과 연통하는 기체 흐름 채널(170)이 형성될 수 있다. 기체 흐름 채널(170)은 기체 공급 유닛(120)의 기체 채널(125)(윗부분)과 기체 공급 유닛(120)의 기체 공급 플레이트(127)(아랫 부분) 사이에 형성될 수 있다. 비록 도면에는 기체 채널(125)과 기체 공급 플레이트(127)가 별개의 구조로 도시되었지만, 기체 채널(125)과 기체 공급 플레이트(127)는 일체화된 구조로 형성될 수도 있다.
기체 채널(125)은 기체 공급 채널(150)과 연결된 중심 주입구를 제공할 수 있다. 중심 주입구는 기체 흐름 채널(170)과 연결될 수 있고, 따라서 기체 흐름 채널(170)은 중심 주입구를 통해 기체 공급 채널(150)과 연결될 수 있다.
전술한 바와 같이, 격벽(110)에는 기체 공급 채널(150)이 형성될 수 있다. 상기 기체 공급 채널(150)에 추가로, 제1 관통 홀(180)이 격벽(110)의 적어도 일부를 관통하도록 형성될 수 있다. 예를 들어, 제1 관통 홀(180)은 격벽(110) 중 반응기 상벽을 관통하도록 형성될 수 있다. 바람직한 실시예에서, 제1 관통 홀(180)의 직경은 기체 공급 채널(150)의 직경보다 작을 수 있다.
제2 관통 홀(185)은 기체 공급 유닛(120)의 적어도 일부를 관통하도록 형성될 수 있다. 예를 들어, 제2 관통 홀(185)은 기체 채널(125)을 관통하여 기체 흐름 채널(170)과 연결되도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 상기 기체 흐름 채널(170)과 연통할 수 있다.
제2 관통 홀(185)은 기체 흐름 채널(170)의 중심과 가장자리 사이에 배치될 수 있다. 특히, 제2 관통 홀(185)은 기체 흐름 채널(170)의 가장자리로부터 이격되어 배치될 수 있다. 이러한 제2 관통 홀(185)의 위치 구조를 통하여, 기판의 특정 부분(즉, 제2 관통 홀(185)이 배치된 부분과 상응하는 부분)에서의 박막 증착이 제어될 수 있다.
예를 들어, 제2 관통 홀(185)을 통해 공급된 기체는 기판의 중심과 가장자리 사이의 부분에 증착되는 박막 하부의 패턴 구조물의 손상 정도에 영향을 미칠 수 있다. 상기 기체가 높은 이온화 에너지를 갖는 차단 가스인 경우, 기판의 중심과 가장자리 사이의 패턴 구조물의 손상은 감소할 수 있다.
샤워헤드 구조는 일반적으로 중심 부분을 통해 반응 기체가 공급되고 가장자리를 통해 배기되는 구조를 채용하는데, 그러한 구조로 인해 기판 가장자리 부분의 패턴 구조물의 손상과 기판 중심 부분의 패턴 구조물의 손상이 균일하지 않게 되는 문제가 발생할 수 있다. 그러나 본 발명에 따르면 별도의 기체 공급 통로를 추가하여, 이를 통해 반응 공간의 중심 부분과 가장자리 사이에 차단 기체가 공급될 수 있다. 이렇게 공급된 차단 기체는 반응 공간의 주변부에서의 라디칼 생성을 제한하는 차폐 효과(blocking effect)를 유도할 수 있고, 결과적으로 기판의 주변부에 형성된 패턴 구조물의 손상이 감소될 수 있다. 따라서 기판의 중심과 가장자리 사이에 발생하는 패턴 구조물의 손상의 편차 문제가 개선될 수 있다.
선택적인 실시예에서, 제2 관통 홀(185)은 중심 주입구의 중심으로부터 일정 간격 이격된 원주를 따라 복수 개 배치될 수 있다. 또 다른 선택적인 실시예에서, 제2 관통 홀(185)은 중심 주입구의 중심으로부터 일정 간격 이격된 원주를 따라 연속적으로 배치될 수도 있다. 이 경우 기체 채널(125)은 상기 제2 관통 홀(185)에 의해 분리된 복수의 부품으로 구성될 수도 있다.
제2 관통 홀(185)은 기체 공급 플레이트(127)에 대하여(또는 기체 흐름 채널(170)에 대하여) 수직 방향으로 또는 경사진 방향으로 기체 채널(125)을 관통하도록 형성될 수 있다. 예를 들어, 제2 관통 홀(185)은, 기체 공급 플레이트(127)의 연장 방향(즉, 수평 방향)에 대하여, 기체 공급 플레이트(127)의 중심을 향하여 15~45 도의 각도로 관통하도록 형성될 수 있다. 다시 말해, 기체 채널(125)을 관통하는 제2 관통 홀(185)의 관통 각도를 조절함으로써, 기판 상에 그리고 박막 하부에 위치하는 패턴 구조물의 플라즈마에 의한 손상의 균일도가 제어될 수 있다.
예시적인 실시예에서, 제2 관통 홀(185)은 기체 공급 플레이트(127)의 연장 방향(즉, 수평 방향)에 대하여 30 도의 각도로 관통하도록 형성될 수 있다. 이 경우, 제2 관통 홀(185)은 기체 채널(125)의 제1 면(예를 들어, 상부 표면) 상에서 제1 지름을 갖는 제1 원주를 따라 배치 또는 형성될 수 있고, 제2 관통 홀(185)은 상기 기체 채널(125)의 제2 면(예를 들어, 하부 표면) 상에서 제2 지름을 갖는 제2 원주를 따라 배치 또는 형성되며, 상기 제1 지름과 상기 제2 지름은 다를 수 있다.
이와 같이, 제2 관통 홀(185)의 개수, 형상, 및 배열 위치와 제2 관통 홀(185)에 공급되는 기체의 종류, 유량 등을 조절함으로써, 패턴 구조물의 손상 균일도가 보다 정밀하게 제어될 수 있고, 결과적으로 원하는 형태와 원하는 품질의 박막이 증착될 수 있다.
선택적인 실시예에서, 제1 관통 홀(180)과 제2 관통 홀(185) 사이에 버퍼 공간(190)이 더 형성될 수도 있다. 상기 버퍼 공간(190)은 제1 관통 홀(180)을 통해 공급된 기체가 제2 관통 홀(185)에 균일하게 공급될 수 있도록 기체를 일시적으로 보유하는 역할을 수행할 수 있다. 따라서, 상기 버퍼 공간(190)의 직경 내지 폭은, 제1 관통 홀(180)의 직경 내지 폭보다 크고, 제2 관통 홀(185)의 직경 내지 폭보다도 클 수 있다. 또한, 버퍼 공간(190)은 기체 공급 채널(150)의 중심으로부터 일정 간격 이격된 원주를 따라 연속으로 형성될 수 있다.
기판 처리 장치는 기체 공급 채널(150)과 공급된 제1 기체 공급부(미도시) 및 제1 관통 홀(180)과 연결된 제2 기체 공급부(미도시)를 더 포함할 수 있다. 또한, 기판 처리 장치는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 제어하도록 구성된 제어부(미도시)를 더 포함할 수 있다. 일 실시예에서, 상기 제어부는 상기 제1 기체 공급부 및 상기 제2 기체 공급부를 독립적으로 제어하도록 더 구성될 수 있다. 예를 들어, 제1 기체 공급부는 소스 기체 및/또는 반응 기체를 공급하도록 구성될 수 있고, 제2 기체 공급부는 차단 기체를 공급하도록 구성될 수 있다.
기판 처리 장치는 RF 로드(130)를 더 포함할 수 있다. RF 로드(130)는 격벽(110)의 적어도 일부를 관통하여 상기 기체 공급 유닛(120)과 연결될 수 있다. RF 로드(130)는 외부의 플라즈마 공급부(미도시)와 연결될 수 있다. 도면에는 2개의 RF 로드(130)가 도시되어 있는데, 본 발명은 그에 제한되지 않고, 적어도 1개 이상의 RF 로드(130)를 설치하여 반응 공간(160)에 공급되는 플라즈마 파워의 균일성을 향상시킬 수 있다.
기판 처리 장치는 격벽(110)의 하부 면과 접촉하도록 구성된 서셉터(200)를 더 포함할 수 있다. 서셉터(200)는 서셉터 지지부(210)에 의해 지지될 수 있고, 서셉터 지지부(210)는 상하 및 회전 운동을 할 수 있다. 서셉터 지지부(210)의 상하 운동에 의해 서셉터(200)가 격벽(110)으로부터 이격되거나 격벽(110)과 접촉함으로써, 반응 공간(160)이 개방되거나 폐쇄될 수 있다.
기판 처리 장치는 배기부(미도시)를 더 포함할 수 있다. 반응 공간(160)에서, 기판과의 화학반응 이후 잔존하는 잔류 기체는, 상기 배기부에 의해, 배기 통로(140) 통해 외부로 배기될 수 있다.
도 4는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치는 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 4를 참조하면, 기판 처리 장치는 격벽(110) 및 격벽(110) 내에 실질직으로 수평하게 똑바로 위치해 있는 기체 공급 유닛(120), 격벽(110) 내의 기체 공급 유닛(120)과 실질적으로 평행하게 마주보도록 위치한 서셉터(200)를 포함할 수 있다.
격벽(110) 내에 마련되어 진공펌프로 연결된 배기 통로(140)는 격벽(110) 내 반응 공간(160)의 잔류 기체를 진공 배출시키는데 이용될 수 있다.
기체 공급 유닛(120)은 샤워헤드일 수 있고, 샤워헤드의 베이스는 원료가스를 분출하도록 형성된 다수의 미세공(220)을 포함할 수 있다. 샤워헤드는 기체 공급 채널(150)을 통해 원료가스 공급 탱크에 연결될 수 있다. 고주파(RF) 전원은 일측 전극으로서 기능하는 샤워헤드와 전기적으로 연결될 수 있다.
서셉터(200)는 지지대에 의해 지지되며, 타측 전극으로서 기능할 수 있다. 서셉터(200)의 표면에는 반도체 기판과 같은 피처리 기판이 로딩될 수 있고, 상기 피처리 기판은 진공 흡착 등에 의해 고정될 수 있다.
또한, 전술한 바와 같이, 제2 관통 홀(185)은 샤워헤드의 상부 부분의 적어도 일부를 관통하도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 샤워헤드의 기체 흐름 채널(170)과 연통할 수 있다.
도 5는 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치는 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 5를 참조하면, 격벽(110)을 포함하는 제1 덮개(240) 및 제2 덮개(250)는 서셉터(200)와 함께 반응 공간(160)을 형성할 수 있다. 보다 구체적으로, 반응 공간(160)의 하부는 서셉터(200)에 의해, 반응 공간(160)의 상부는 제1 덮개(240)에 의해, 반응 공간(160)의 양 측면은 제2 덮개(250)에 의해 형성될 수 있다.
기판 처리 장치가 증착 장치인 경우, 제1 덮개(240)는 샤워헤드를 포함할 수 있다. 제2 덮개(250)는 반응 측벽(W) 및 배기 통로(140)를 포함할 수 있다.
기판 처리 장치의 배기 구조는 하류 배기 구조로 구성될 수 있고, 이 때 상기 하류 배기 구조는 제2 덮개(250)에 의해 구현될 수 있다. 이 경우 증착에 이용되는 기체는 제1 덮개(240)의 샤워헤드를 통해 피처리 기판으로 분사되고 이후 제2 덮개(250)의 배기 통로(140)를 통해 하류 배기될 수 있다.
또한, 전술한 바와 같이, 제2 관통 홀(185)은 기체공급 유닛(125)의 상부 부분의 적어도 일부를 관통하도록 형성될 수 있다. 따라서, 제1 관통 홀(180)이 제2 관통 홀(185)을 통해 샤워헤드의 기체 흐름 채널(170)과 연통할 수 있다.
도 6은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기체 공급 유닛 및 이를 포함하는 기판 처리 장치를 개략적으로 나타낸다. 이 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치는 전술한 실시예들에 따른 기체 공급 유닛 및 기판 처리 장치의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
전술한 바와 같이, 본 발명에서는 기판 상에 증착되는 박막의 각 부분별로 특성을 제어하는 방법을 개시한다. 본 발명에 따르면, 기판 상에 기체를 공급하는 기체 공급 수단을 구비한 반응기에서 기판상에 플라즈마를 이용한 박막 증착이 이루어진다. 더욱 구체적으로는 상기 기체 공급 수단은 샤워헤드이며 상기 플라즈마를 이용한 박막 증착은 플라즈마 원자층 증착법(PEALD), 플라즈마 화학기상 증착법(PECVD), 펄스드 플라즈마 화학기상 증착법(Pulsed PECVD) 그리고 사이클릭 펄스드 플라즈마 화학 기상 증착법(Cyclic pulsed PECVD)중의 하나 혹은 상기 방법들의 적절한 조합일 수 있고 혹은 상기 방법들의 적절한 변형일 수 있다.
도 6을 참조하면, 반응기(1)는 반응기 벽(2)과 서셉터(3)가 면접촉을 통해 반응 공간(13)을 형성한다. 기체는 반응기 중심에 위치한 제1 기체 유입구(4)와 주변부에 위치한 제2 기체 공급 포트(8)와 제2 기체 유입구(5,6,7) 및 그 하부에 위치한 샤워헤드(11) 홀들(showerhead holes, 미도시)를 통해 반응 공간(13)으로 공급된다.
반응 공간(13)으로 공급된 기체는 서셉터(3) 상에 로딩된 기판(미도시) 표면과 반응한 후, 배기 채널(14), 배기 홀(15), 배기 통로(16) 및 배기 포트(18)를 통해 배기된다. 상기 제2 기체 유입구(5,6,7)는 반응기 벽(2), 백플레이트(9), 기체 채널(10)을 관통하여 기체 흐름 채널(12)과 연결될 수 있다. 예를 들어, 기체 채널(10)을 관통하는 제 2기체 유입구(7)는 기판 표면을 기준으로 다양한 각도로 형성될 수 있다. 그에 의해 기판 상의 특정 부분에 공급되는 기체의 유량이 제어될 수 있고, 기판 상의 특정 부분에 증착되는 박막의 특성이 제어될 수 있다.
상기 반응기 벽을 관통하는 제2 기체 유입구(5)는 상기 반응기의 일면을 관통할 수 있다. 다른 제2 기체 유입구(6,7)는 반응기의 중심을 기준으로 환형으로 배치될 수 있고, 그에 의해 기판의 주변부에 균일하게 제2 기체가 공급될 수 있다.
도 7은 도 6의 반응기에서 PEALD 방법으로 기판상의 SOH(Spin-On-Hardmask, Photo Resist의 한 종류) 막 위에 SiO2 막을 증착할 때 플라즈마 라디칼에 의한 하부 SOH 막의 손상 정도를 보여준다. 하기 손상 정도는 상기 증착된 SiO2막을 습식 식각(wet etch) 하여 측정하였다.
도 7을 참조하면, 도 7의 가로축은 지름 300mm 기판의 중심에서 양쪽 방향으로 각 위치를 나타내고 세로축은 플라즈마 ALD 방식으로 SiO2막을 증착했을 때 상기 도 6의 제2 기체 공급통로를 통해 공급되는 산소 혹은 비활성기체(예를 들어 Ar)의 유량에 따른 SOH 하부막의 손실 정도를 나타낸다. 도 6의 반응기에서 제2 기체 유입구를 통해 각각 산소 50sccm, 250sccm, Ar 600sccm, 1000accm을 공급했으나, 기체의 종류 및 유량에 관계없이 전 기판에 걸쳐 SOH막의 손실 형태 및 정도는 비슷하였다.
보다 구체적으로, 도 7을 참조하면, SOH 하부막의 손실 균일도(SOH loss uniformity)는 전 기판에 걸쳐 일정하지 않고 기판의 가장자리부에서 SOH 막의 손실 정도가 컸다. 이것은 플라즈마 공정 시 반응 공간에 걸쳐 플라즈마 라디칼 밀도가 일정하지 않고 상기 기판의 가장자리부에서의 라디칼 밀도가 특히 높다는 것을 의미한다. 따라서 본 발명에서는 상기 가장자리부에서의 라디칼 밀도를 제어함으로써, 전체적으로 SOH 손실 균일도(SOH loss uniformity)를 높일 수 있는 방법을 개시하고자 한다.
상기 기판 주변부(기판 중심부와 기판 가장자리부 사이의 영역)에서의 라디칼의 밀도를 제어하기 위해 혹은 낮추기 위해서, 본 발명에서는 라디칼 생성을 억제하는 기체를 공급하였다. 본 발명의 한 실시예에 따르면, SOH 막 상에 플라즈마를 이용하여 SiO2막을 증착할 때, 상기 제2 기체 유입구를 통해 질소를 포함하는 기체를 공급하였다. 구체적으로는 상기 제1 기체 유입구를 통해 소스 기체, 산소 반응기체와 Ar 캐리어 기체 혹은 퍼지기체가 공급될 때, 상기 제2 기체 유입구를 통해서 질소 기체를 공급한다. 질소기체의 이온화 에너지는 1,503MJ/mol, Ar기체의 이온화 에너지는 1,520.6KJ/mol 그리고 산소기체의 이온화 에너지는 493.4KJ/mol로서, 질소 기체의 해리 에너지가 다른 기체의 해리 에너지보다 훨씬 크다. 따라서, 질소를 공급할 때 아르곤 혹은 산소를 공급하는 경우 비해 플라즈마 발생이 억제될 수 있다. 질소 외에도 상기 캐리어 기체 혹은 퍼지기체 그리고 반응기체보다 이온화 에너지가 높은 기체가 상기 제2 기체 유입구를 통해 공급될 수 있다.
이와 같이, 본 발명의 기술적 사상에 따르면, 기판의 중심부에 비해 제2 기체 유입구에 대응하는 기판 상의 주변부에서의 라디칼 발생을 억제함으로써, 주변부 영역에서의의 SOH 손실이 방지될 수 있고, 전체적으로 보다 균일한 SOH 손실 균일도(SOH loss uniformity)가 달성될 수 있다.
도 8은 27MHz, 600 와트(watt)의 플라즈마 조건 하에서 기판 상의 SOH 구조물 상에 SiO2 막을 증착할 때 기판의 각 영역별로 SOH 손실 정도를 보여주고 있다. 기판은 300mm 지름을 갖고 있으며 가로축의 중심, 즉 기판 중심을 기준으로 양쪽으로 각각 150mm씩 각 위치별로 SOH 손실을 측정했다. 세로축은 SOH 손실의 정도를 옹스트롬 단위로 측정한 것을 나타낸다.
도 8을 참조하면, 산소 기체는 Ar 기체와 함께 공급되며 제2 기체 유입구를 통해 기판 주변부로 공급되는 질소 함유기체(예를 들어, N2O)의 양에 따른 SOH 손실을 측정했을 때, 질소 함유 기체의 유량이 증가할수록 기판 주변부에서의 SOH 손실이 감소함을 알 수 있다. 즉, 산소와 Ar 기체만을 공급했을 때에는 기판 상에서의 SOH 손실의 균일성이 좋지 않았지만, Ar 대신 질소 함유기체의 비율을 증가시킬 때에는 기판 주변부에서의 플라즈마 생성이 억제되고 따라서 라디칼에 의한 SOH의 침식이 감소될 수 있다. 결과적으로 SOH 손실의 균일성이 전반적으로 제어될 수 있으며 점차 개선됨을 알 수 있다. 또한 도 8을 보면 질소 기체의 공급량이 증가할 수록 기판 가장자리부에서의 SOH 손실은 감소하지만 중심부의 SOH 손실은 오히려 증가함을 보여주는데, 이는 기판 주변부에 공급된 질소 기체가 중심부에 공급된 산소기체를 둘러쌈으로써 상대적으로 중심부에서의 산소 라디칼의 밀도가 증가하고 SOH 손실이 증가하는 것으로 이해할 수 있다. 따라서 기판 주변부로 공급되는 질소 함유 기체의 유량을 적절히 조절함으로써 기판 중심부의 라디칼 밀도를 조절할 수 있고 SOH 손실 혹은 하부막 변형의 균일도(uniformity)가 적절히 제어될 수 있음을 보여 준다.
도 9는 또 다른 실시예로서, N2O대신 N2기체를 공급했을 때 기판 상에서 SOH 손실의 균일성이 변하는 것을 보여주고 있다. 도 9를 참조하면, N2기체를 제1 기체 유입구 및 제2 기체 유입구를 통해 반응 공간의 주변부로 공급했을 때 가장자리의 질소 기체(edge N2; EN)의 유량에 따라 SOH 손실의 균일성(uniformity)이 제어될 수 있음을 알 수 있다.
도 10은 본 발명의 기술적 사상에 의한 다른 실시예들에 따른 기판 처리 방법을 개략적으로 나타낸 단면도이다. 이 실시예들에 따른 기판 처리 방법은 전술한 실시예들에 따른 기판 처리 방법의 변형예일 수 있다. 이하 실시예들간 중복되는 설명은 생략하기로 한다.
도 10을 참조하면, 반응 공간의 중심에 배치된 제1 기체 유입구를 통해서 Si 소스 기체, 산소 기체 그리고 Ar기체가 반응공간으로 공급되며, 반응 공간의 주변에 배치된 제2 기체 유입구를 통해서 질소 혹은 이산화 질소가 반응공간의 주변 영역으로 공급된다. 산소 기체는 제1 기체 유입구를 통해 도 10에서와 같이 펄스 형태로 공급될 수도 있고, 연속적으로 공급될 수도 있다. 본 발명에 따르면, 기판의 주변 영역에는 질소 기체의 상대적 비율이 높아 기판의 중심부와 가장자리부에 비해 라디칼 발생률이 상대적으로 작아진다. 따라서, 주변부에서의 SOH 손실이 줄어들어 전체적으로 SOH 손실 균일도가 향상될 수 있다(도 8 및 도 9 참조)
이와 같이, 본 발명에 따르면, 플라즈마 증착 공정에 있어 기판 중심부와 가장자리부 사이의 주변영역에 반응기체와 캐리어 기체보다 이온화 에너지가 높은 기체를 공급함으로써, 주변부 영역에서의 라디칼 발생이 중심부와 가장자리부에 비해 상대적으로 억제될 수 있고, 주변부에서의 하부 막 손실을 제어함으로써, 기판 전체적으로 하부막 손실 균일도가 향상될 수 있다.
본 발명을 명확하게 이해시키기 위해 첨부한 도면의 각 부위의 형상은 예시적인 것으로 이해하여야 한다. 도시된 형상 외의 다양한 형상으로 변형될 수 있음에 주의하여야 할 것이다.
이상에서 설명한 본 발명이 전술한 실시예 및 첨부된 도면에 한정되지 않으며, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것은, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 명백할 것이다.

Claims (20)

  1. 패턴 구조물이 형성된 기판 상에 제1 기체를 공급하는 단계;
    상기 제1 기체를 퍼지하는 단계;
    상기 제1 기체와 반응성을 갖는 제2 기체 및 제3 기체를 플라즈마 분위기 하에서 공급하여 상기 패턴 구조물 상에 박막을 형성하는 단계; 및
    상기 제2 기체를 퍼지하는 단계를 포함하고,
    상기 박막을 형성하는 단계 동안, 상기 제2 기체는 기체 공급 유닛의 적어도 중심 기체 유입구를 통해 공급되고, 상기 제3 기체는 상기 기체 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급되며,
    상기 제3 기체는 상기 제1 기체 및 상기 제2 기체와 다른 기체이며, 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 갖는, 기판 처리 방법.
  2. 청구항 1에 있어서,
    상기 제3 기체가 상기 추가 기체 유입구를 통해 공급되어 기판 가장자리의 유량이 증가되고, 그에 따라 기판 중심 부근의 라디칼 밀도가 증가되는, 기판 처리 방법.
  3. 청구항 2에 있어서,
    상기 제3 기체는 질소 성분을 포함하는, 기판 처리 방법.
  4. 청구항 3에 있어서,
    상기 제3 기체는 아산화 질소 기체 및 질소 기체 중 적어도 하나를 포함하는, 기판 처리 방법.
  5. 청구항 1에 있어서,
    상기 제2 기체는 산소 성분을 포함하고, 상기 제3 기체는 질소 성분을 포함하며,
    상기 박막은 섭씨 100도 이하의 온도 조건에서 형성된 산화막인, 기판 처리 방법.
  6. 청구항 5에 있어서,
    상기 제2 기체는 산소이고, 상기 제3 기체는 아산화질소이며,
    상기 플라즈마 분위기에서상기 산소 기체와 상기 아산화질소 기체의 유량의 부피비는 1:0.625 내지 1:1.25인, 기판 처리 방법.
  7. 청구항 5에 있어서,
    상기 제2 기체는 산소이고, 상기 제3 기체는 질소이며,
    상기 플라즈마 분위기에서상기 산소 기체와 상기 질소 기체의 유량의 부피비는 1:0.625 내지 1:1.25인, 기판 처리 방법.
  8. 청구항 1에 있어서,
    상기 플라즈마 분위기 하에서 상기 패턴 구조물의 손상이 발생하는, 기판 처리 방법.
  9. 청구항 8에 있어서,
    상기 패턴 구조물의 손상은 상기 추가 기체 유입구를 통해 공급되는 상기 제3 기체에 의해 변화하는, 기판 처리 방법,
  10. 청구항 8에 있어서,
    상기 패턴 구조물은 스핀 온 하드마스크(SOH)를 포함하는, 기판 처리 방법.
  11. 청구항 1에 있어서,
    상기 패턴 구조물 상에 형성된 상기 박막을 이용하여 수행되는 더블 패터닝 공정 또는 쿼드러플 패터닝 공정을 더 포함하는, 기판 처리 방법.
  12. 청구항 1에 있어서,
    상기 플라즈마 분위기 하에서, 상기 제2 기체는 이온화되고, 상기 제3 기체는 이온화되지 않는, 기판 처리 방법.
  13. 청구항 1에 있어서,
    상기 제1 기체는 제1 온도에서 상기 제2 기체와는 반응하고,
    상기 제1 기체는 상기 제1 온도에서 상기 제3 기체와는 반응하지 않는, 기판 처리 방법.
  14. 청구항 1에 있어서,
    상기 제3 기체는 상기 제1 기체 및 상기 제2 기체의 이온화 에너지보다 높은 이온화 에너지를 갖는, 기판 처리 방법.
  15. 산소와 반응하는 패턴 구조물이 형성된 기판 상에 실리콘 함유 기체를 공급하는 단계;
    상기 실리콘 함유 기체를 퍼지하는 단계;
    산소 함유 기체 및 질소 함유 기체를 섭씨 100도 이하의 플라즈마 분위기 하에서 공급하여 상기 패턴 구조물 상에 실리콘 산화막을 형성하는 단계; 및
    상기 산소 함유 기체를 퍼지하는 단계를 포함하고,
    적어도 상기 실리콘 산화막을 형성하는 단계 동안, 상기 산소 함유 기체는 기체 공급 유닛의 적어도 중심 기체 유입구를 통해 공급되고, 상기 질소 함유 기체는 상기 기체 공급 유닛의 상기 중심 기체 유입구와 이격된 추가 기체 유입구를 통해 공급되는, 기판 처리 방법.
  16. 청구항 15에 있어서,
    상기 산소와 반응하는 패턴 구조물은 스핀 온 하드마스크이고,
    상기 산소 함유 기체는 산소이고, 상기 질소 함유 기체는 아산화질소이며,
    상기 플라즈마 분위기에서 상기 산소 기체와 상기 아산화질소 기체의 유량의 부피비는 1:0.625 내지 1:1.25인, 기판 처리 방법.
  17. 청구항 15에 있어서,
    상기 실리콘 산화막을 형성하는 단계 동안, 상기 기판의 상기 패턴 구조물 상에 흡착된 실리콘 함유 기체는 산소 함유 기체와는 반응하고 질소 함유 기체와는 반응하지 않는, 기판 처리 방법.
  18. 청구항 15에 있어서,
    상기 질소 함유 기체가 상기 추가 기체 유입구를 통해 공급되어 기판 가장자리의 유량이 증가하고,
    상기 기판 가장자리의 유량 증가로 인해 기판 가장자리 부분에서의 패턴 구조물과 반응하는 라디칼 밀도는 감소하며,
    상기 기판 가장자리의 유량 증가로 인해 기판 중심 부근에서의 패턴 구조물과 반응하는 라디칼 밀도는 증가하고,
    결과적으로 기판 가장자리 부분에서의 패턴 구조물의 손상과 기판 중심 부근에서의 패턴 구조물의 손상이 균일해지는, 기판 처리 방법.
  19. 반응 물질과 반응하는 패턴 구조물이 형성된 기판 상에 소스 물질을 공급하는 단계; 및
    플라즈마 분위기 하에서 공급 유닛의 적어도 중심 유입구를 통해 상기 반응 물질을 공급하는 단계를 포함하고,
    상기 반응 물질을 공급하는 단계 동안, 상기 반응 물질과 다른 차단 물질이 상기 공급 유닛의 상기 중심 유입구와 이격된 추가 기체 유입구를 통해 공급되며,
    상기 차단 물질에 의해 기판 가장자리의 유량이 증가되고, 그에 따라 기판 중심 부근의 반응 물질의 라디칼 밀도가 증가되는, 기판 처리 방법.
  20. 청구항 19에 있어서,
    상기 차단 물질은 비활성 기체의 이온화 에너지보다 높은 이온화 에너지를 갖는, 기판 처리 방법.
KR1020180037762A 2018-03-30 2018-03-30 기판 처리 방법 KR102501472B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020180037762A KR102501472B1 (ko) 2018-03-30 2018-03-30 기판 처리 방법
US16/255,639 US10867786B2 (en) 2018-03-30 2019-01-23 Substrate processing method
SG10201901224S SG10201901224SA (en) 2018-03-30 2019-02-13 Substrate processing method
TW108105002A TWI736840B (zh) 2018-03-30 2019-02-14 基底處理方法
JP2019062296A JP6782320B2 (ja) 2018-03-30 2019-03-28 基板処理方法
CN201910250125.2A CN110318041B (zh) 2018-03-30 2019-03-29 基底处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020180037762A KR102501472B1 (ko) 2018-03-30 2018-03-30 기판 처리 방법

Publications (2)

Publication Number Publication Date
KR20190114682A KR20190114682A (ko) 2019-10-10
KR102501472B1 true KR102501472B1 (ko) 2023-02-20

Family

ID=68055462

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020180037762A KR102501472B1 (ko) 2018-03-30 2018-03-30 기판 처리 방법

Country Status (6)

Country Link
US (1) US10867786B2 (ko)
JP (1) JP6782320B2 (ko)
KR (1) KR102501472B1 (ko)
CN (1) CN110318041B (ko)
SG (1) SG10201901224SA (ko)
TW (1) TWI736840B (ko)

Families Citing this family (247)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) * 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR20200108016A (ko) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
TW202013553A (zh) 2018-06-04 2020-04-01 荷蘭商Ａｓｍ 智慧財產控股公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
KR102638425B1 (ko) 2019-02-20 2024-02-21 에이에스엠 아이피 홀딩 비.브이. 기판 표면 내에 형성된 오목부를 충진하기 위한 방법 및 장치
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200108248A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOCN 층을 포함한 구조체 및 이의 형성 방법
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112242296A (zh) 2019-07-19 2021-01-19 Asm Ip私人控股有限公司 形成拓扑受控的无定形碳聚合物膜的方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
CN112323048B (zh) 2019-08-05 2024-02-09 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11236424B2 (en) * 2019-11-01 2022-02-01 Applied Materials, Inc. Process kit for improving edge film thickness uniformity on a substrate
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210078405A (ko) 2019-12-17 2021-06-28 에이에스엠 아이피 홀딩 비.브이. 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조
KR20210080214A (ko) 2019-12-19 2021-06-30 에이에스엠 아이피 홀딩 비.브이. 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
TW202146715A (zh) 2020-02-17 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於生長磷摻雜矽層之方法及其系統
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
TW202217037A (zh) 2020-10-22 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 沉積釩金屬的方法、結構、裝置及沉積總成
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
CN114639631A (zh) 2020-12-16 2022-06-17 Asm Ip私人控股有限公司 跳动和摆动测量固定装置
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101099223B1 (ko) 2008-08-20 2011-12-27 시너스 테크놀리지, 인코포레이티드 기상 증착을 위한 반응 모듈 및 기상 증착 반응기
US9085825B2 (en) 2012-09-11 2015-07-21 Asm Ip Holding B.V. Deposition apparatus and method of depositing thin film using the same

Family Cites Families (3757)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
US2059480A (en) 1933-09-20 1936-11-03 John A Obermaier Thermocouple
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2266416A (en) 1939-01-14 1941-12-16 Western Electric Co Control apparatus
US2280778A (en) 1939-09-29 1942-04-28 John C Andersen Garden tool
US2410420A (en) 1944-01-01 1946-11-05 Robert B Bennett Scraper
US2563931A (en) 1946-04-02 1951-08-14 Honeywell Regulator Co Rate responsive thermocouple
US2660061A (en) 1949-03-05 1953-11-24 Dominion Eng Works Ltd Immersion type thermocouple temperature measuring device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
GB752277A (en) 1953-10-28 1956-07-11 Canadian Ind 1954 Ltd Improved thermocouple unit
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US3038951A (en) 1961-01-19 1962-06-12 Leeds & Northrup Co Fast acting totally expendable immersion thermocouple
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US3410349A (en) 1964-01-02 1968-11-12 Ted R. Troutman Tubing scraper and method
US3263502A (en) 1964-01-21 1966-08-02 Redwood L Springfield Multiple thermocouple support
FR1408266A (fr) 1964-06-30 1965-08-13 Realisations Electr Et Electro Prise de raccordement pour thermocouples
US3332286A (en) 1965-09-02 1967-07-25 Gen Electric Thermocouple pressure gauge
NL6706680A (ko) 1966-06-02 1967-12-04
US3588192A (en) 1969-06-02 1971-06-28 Trw Inc Hydraulic skid control system
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US3647716A (en) 1970-04-03 1972-03-07 Westvaco Corp Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3713899A (en) 1970-11-12 1973-01-30 Ford Motor Co Thermocouple probe
US3885504A (en) 1971-01-09 1975-05-27 Max Baermann Magnetic stabilizing or suspension system
US3718429A (en) 1971-03-15 1973-02-27 Du Pont No-no2 analyzer
CA1002299A (en) 1971-06-24 1976-12-28 William H. Trembley Installation tool
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3796182A (en) 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
FR2181175A5 (ko) 1972-04-20 1973-11-30 Commissariat Energie Atomique
JPS5132766B2 (ko) 1972-07-25 1976-09-14
JPS5539903B2 (ko) 1972-10-19 1980-10-14
DE7242602U (ko) 1972-11-20 1976-04-29 Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande)
DE2427992A1 (de) 1973-06-13 1975-03-13 Thermal Syndicate Ltd Verfahren zum messen hoher temperaturen mit thermoelementen
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2407133B2 (de) 1974-02-15 1976-12-09 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren und vorrichtung zur bestimmung von stickoxid
US3904371A (en) 1974-03-04 1975-09-09 Beckman Instruments Inc Chemiluminescent ammonia detection
SU494614A1 (ru) 1974-05-05 1975-12-05 Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср Устройство дистанционного измерени уровн жидкости
US3997638A (en) 1974-09-18 1976-12-14 Celanese Corporation Production of metal ion containing carbon fibers useful in electron shielding applications
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US4048110A (en) 1976-05-12 1977-09-13 Celanese Corporation Rhenium catalyst composition
USD249341S (en) 1976-11-11 1978-09-12 Umc Industries, Inc. Electro-mechanical pulser
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4164959A (en) 1977-04-15 1979-08-21 The Salk Institute For Biological Studies Metering valve
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4126027A (en) 1977-06-03 1978-11-21 Westinghouse Electric Corp. Method and apparatus for eccentricity correction in a rolling mill
US4152760A (en) 1977-09-16 1979-05-01 The Foxboro Company Industrial process control system
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4217463A (en) 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
US4229064A (en) 1978-10-25 1980-10-21 Trw Inc. Polarizing adapter sleeves for electrical connectors
US4234449A (en) 1979-05-30 1980-11-18 The United States Of America As Represented By The United States Department Of Energy Method of handling radioactive alkali metal waste
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4355912A (en) 1980-09-12 1982-10-26 Haak Raymond L Spring loaded sensor fitting
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4333735A (en) 1981-03-16 1982-06-08 Exxon Research & Engineering Co. Process and apparatus for measuring gaseous fixed nitrogen species
US4466766A (en) 1981-05-20 1984-08-21 Ruska Instrument Corporation Transfer apparatus
USD269850S (en) 1981-07-22 1983-07-26 Drag Specialties, Inc. Handlebar grip
JPS5819462A (ja) 1981-07-24 1983-02-04 Kawasaki Steel Corp 電縫溶接鋼管
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
JPS58107339A (ja) 1981-12-19 1983-06-27 Takanobu Yamamoto レ−ザ−ビ−ムによる印判彫刻方法
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
US4484061A (en) 1982-05-13 1984-11-20 Sys-Tec, Inc. Temperature control system for liquid chromatographic columns employing a thin film heater/sensor
FR2529714A1 (fr) 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
FR2532783A1 (fr) 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
US4454370A (en) 1982-09-07 1984-06-12 Wahl Instruments, Inc. Thermocouple surface probe
US4444990A (en) 1982-09-08 1984-04-24 Servo Corporation Of America Heat sensing device
JPS5945900U (ja) 1982-09-17 1984-03-27 住友電気工業株式会社 高周波誘導プラズマ用ト−チ
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS59211779A (ja) 1983-05-14 1984-11-30 Toshiba Corp 圧縮機
US4537001A (en) 1983-05-23 1985-08-27 Uppstroem Leif R Building elements
US4548688A (en) 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
USD274122S (en) 1983-06-20 1984-06-05 Drag Specialties, Inc. Motorcycle handlebar grip
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPS60135990U (ja) 1984-02-20 1985-09-10 株式会社富士通ゼネラル 電子式キヤツシユレジスタ
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US4527005A (en) 1984-03-13 1985-07-02 The United States Of America As Represented By The United States Department Of Energy Spring loaded thermocouple module
US4512841A (en) 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
US4724272A (en) 1984-04-17 1988-02-09 Rockwell International Corporation Method of controlling pyrolysis temperature
US4575636A (en) 1984-04-30 1986-03-11 Rca Corporation Deep ultraviolet (DUV) flood exposure system
US4611966A (en) 1984-05-30 1986-09-16 Johnson Lester R Apparatus for transferring semiconductor wafers
US4590326A (en) 1984-06-14 1986-05-20 Texaco Inc. Multi-element thermocouple
US4858557A (en) 1984-07-19 1989-08-22 L.P.E. Spa Epitaxial reactors
JPS6138863A (ja) 1984-07-30 1986-02-24 Toshiba Corp 研磨装置
US4579378A (en) 1984-10-31 1986-04-01 Snyders Robert V Mortar joint pointing guide
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPH0236276Y2 (ko) 1985-01-10 1990-10-03
US4620998A (en) 1985-02-05 1986-11-04 Haresh Lalvani Crescent-shaped polygonal tiles
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
US4664769A (en) 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPH0651909B2 (ja) 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
JPS62237236A (ja) 1986-04-09 1987-10-17 Hitachi Ltd 恒温清浄作業室
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
USD309702S (en) 1986-06-25 1990-08-07 Don Hall Safety clamp attachment for a hammer
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US4812201A (en) 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
US4721533A (en) 1986-08-01 1988-01-26 System Planning Corporation Protective structure for an immersion pyrometer
US4749416A (en) 1986-08-01 1988-06-07 System Planning Corporation Immersion pyrometer with protective structure for sidewall use
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
DE3635216A1 (de) 1986-10-16 1988-04-21 Draegerwerk Ag Elektrisch ansteuerbares ventil
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
USD311126S (en) 1986-12-23 1990-10-09 Joseph Crowley Shelf extending mounting bracket for additional product display
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
SU1408319A1 (ru) 1987-01-06 1988-07-07 Всесоюзный научно-исследовательский институт аналитического приборостроения Хемилюминесцентный газоанализатор окислов азота
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4790258A (en) 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4871523A (en) 1987-05-15 1989-10-03 Exxon Chemical Patents Inc. Vanadium tetrachloride stabilization
US4808387A (en) 1987-05-15 1989-02-28 Exxon Chemical Patents Inc. Stabilization of vanadium tetrachloride
US4828224A (en) 1987-10-15 1989-05-09 Epsilon Technology, Inc. Chemical vapor deposition system
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
US4837113A (en) 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
KR970004947B1 (ko) 1987-09-10 1997-04-10 도오교오 에레구토론 가부시끼가이샤 핸들링장치
US4854266A (en) 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4916091A (en) 1987-11-05 1990-04-10 Texas Instruments Incorporated Plasma and plasma UV deposition of SiO2
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
US4830515A (en) 1987-12-28 1989-05-16 Omega Engineering, Inc. Mounting clip for a thermocouple assembly
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
KR0129406B1 (ko) 1988-03-24 1998-04-07 카자마 젠쥬 반도체 웨이퍼처리장치
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US4949848A (en) 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
JPH01296613A (ja) 1988-05-25 1989-11-30 Nec Corp ３−ｖ族化合物半導体の気相成長方法
JPH01307229A (ja) 1988-06-06 1989-12-12 Canon Inc 堆積膜形成法
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
US5064337A (en) 1988-07-19 1991-11-12 Tokyo Electron Limited Handling apparatus for transferring carriers and a method of transferring carriers
IT1227708B (it) 1988-07-29 1991-05-06 Pomini Farrel Spa Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso.
US5158128A (en) 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
JPH0293071A (ja) 1988-09-29 1990-04-03 Toshiba Corp 薄膜の形成方法
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5107170A (en) 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
DE3836696C1 (en) 1988-10-28 1989-12-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Lock for transporting material between clean rooms
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
US5084126A (en) 1988-12-29 1992-01-28 Texas Instruments Incorporated Method and apparatus for uniform flow distribution in plasma reactors
USD320148S (en) 1988-12-30 1991-09-24 Andrews Edward A Drill socket
JPH02185038A (ja) 1989-01-11 1990-07-19 Nec Corp 熱処理装置
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
EP0382984A1 (en) 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal decomposition trap
US5053247A (en) 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US5088444A (en) 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
US4934831A (en) 1989-03-20 1990-06-19 Claud S. Gordon Company Temperature sensing device
EP0422243B1 (en) 1989-03-31 1994-09-21 Canon Kabushiki Kaisha Method of forming polycrystalline film by chemical vapor deposition
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
EP0395358B1 (en) 1989-04-25 2001-03-14 Matsushita Electronics Corporation Manufacturing method of a bipolar transistor
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5313061A (en) 1989-06-06 1994-05-17 Viking Instrument Miniaturized mass spectrometer system
US5061083A (en) 1989-06-19 1991-10-29 The United States Of America As Represented By The Department Of Energy Temperature monitoring device and thermocouple assembly therefor
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5213650A (en) 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
FI83176C (fi) 1989-09-12 1991-06-10 Aitec Oy Foerfarande foer styrning av roerelser hos en robot och en styckemanipulator under en robotcells inlaerningsskede.
US5057436A (en) 1989-10-02 1991-10-15 Agmaster, Inc. Method and apparatus for detecting toxic gases
US5098865A (en) 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
JPH03155625A (ja) 1989-11-14 1991-07-03 Seiko Epson Corp プラズマｃｖｄ膜の製造方法
US5002632A (en) 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
EP0454846B1 (en) 1989-11-22 1996-09-11 Nippon Steel Corporation Thermocouple-type temperature sensor and method of measuring temperature of molten steel
US4987102A (en) 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
JP2723324B2 (ja) 1990-01-25 1998-03-09 日本特殊陶業株式会社 アルミナ焼結基板
USD330900S (en) 1990-02-08 1992-11-10 Wakegijig William M Drill adapter
JP2936623B2 (ja) 1990-02-26 1999-08-23 日本電気株式会社 半導体装置の製造方法
LU87693A1 (fr) 1990-03-07 1991-10-08 Wurth Paul Sa Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve
JPH03257182A (ja) 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
EP0448346B1 (en) 1990-03-19 1997-07-09 Kabushiki Kaisha Toshiba Vapor-phase deposition apparatus
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5243202A (en) 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5356672A (en) 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
CA2016970A1 (en) 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
JPH0429313A (ja) 1990-05-24 1992-01-31 Fujitsu Ltd 半導体結晶の製造装置
US5130003A (en) 1990-06-14 1992-07-14 Conrad Richard H method of powering corona discharge in ozone generators
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JPH0464025A (ja) 1990-07-02 1992-02-28 Matsushita Electric Ind Co Ltd 調理器用温度センサー
DE69127609T2 (de) 1990-07-18 1998-01-22 Sumitomo Electric Industries Vorrichtung und verfahren zur herstellung von diamanten
KR0176715B1 (ko) 1990-07-30 1999-04-15 오가 노리오 드라이에칭방법
US5082517A (en) 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
JPH04115531A (ja) 1990-09-05 1992-04-16 Mitsubishi Electric Corp 化学気相成長装置
US5273609A (en) 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (ko) 1990-10-15 1993-10-11 Seiko Epson Corp
JP2714247B2 (ja) 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US5228114A (en) 1990-10-30 1993-07-13 Tokyo Electron Sagami Limited Heat-treating apparatus with batch scheme having improved heat controlling capability
US5071258A (en) 1991-02-01 1991-12-10 Vesuvius Crucible Company Thermocouple assembly
JPH05136218A (ja) 1991-02-19 1993-06-01 Tokyo Electron Yamanashi Kk 検査装置
JP2740050B2 (ja) 1991-03-19 1998-04-15 株式会社東芝 溝埋込み配線形成方法
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US6095083A (en) 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
DE4122452C2 (de) 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
JPH0523079A (ja) 1991-07-19 1993-02-02 Shimano Inc 釣り竿及びその製造方法
US5277932A (en) 1991-07-29 1994-01-11 Syracuse University CVD method for forming metal boride films using metal borane cluster compounds
US5137286A (en) 1991-08-23 1992-08-11 General Electric Company Permanent magnet floating shaft seal
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5154301A (en) 1991-09-12 1992-10-13 Fluoroware, Inc. Wafer carrier
CA2078540A1 (en) 1991-09-17 1993-03-18 So Tanaka Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film
FR2682047B1 (fr) 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
JPH05118928A (ja) 1991-10-25 1993-05-14 Tokyo Electron Ltd 接触式の温度測定方法
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US6400996B1 (en) 1999-02-01 2002-06-04 Steven M. Hoffberg Adaptive pattern recognition based control system and method
JPH05171446A (ja) 1991-12-24 1993-07-09 Furukawa Electric Co Ltd:The 薄膜形成方法
US5414221A (en) 1991-12-31 1995-05-09 Intel Corporation Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
US5215588A (en) 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2506539B2 (ja) 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
NL9200446A (nl) 1992-03-10 1993-10-01 Tempress B V Inrichting voor het behandelen van microschakeling-schijven (wafers).
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
JPH05267186A (ja) 1992-03-18 1993-10-15 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
JP3191392B2 (ja) 1992-04-07 2001-07-23 神鋼電機株式会社 クリーンルーム用密閉式コンテナ
JPH05291142A (ja) 1992-04-15 1993-11-05 Nec Corp 液体ソース供給装置
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
US5461214A (en) 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
EP0647163B1 (en) 1992-06-22 1998-09-09 Lam Research Corporation A plasma cleaning method for removing residues in a plasma treatment chamber
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
ATE129361T1 (de) 1992-08-04 1995-11-15 Ibm Fertigungsstrasse architektur mit vollautomatisierten und rechnergesteuerten fördereinrichtungen geeignet für abdichtbaren tragbaren unter druck stehenden behältern.
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
USD363464S (en) 1992-08-27 1995-10-24 Tokyo Electron Yamanashi Limited Electrode for a semiconductor processing apparatus
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
JP3183575B2 (ja) 1992-09-03 2001-07-09 東京エレクトロン株式会社 処理装置および処理方法
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5246218A (en) 1992-09-25 1993-09-21 Intel Corporation Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment
US6438502B1 (en) 1992-10-07 2002-08-20 Dallas Semiconductor Corporation Environmental condition sensor device and method
USD354898S (en) 1992-10-13 1995-01-31 Verdel Innovations Egg holder for use with a stand for decorating eggs
JP3190745B2 (ja) 1992-10-27 2001-07-23 株式会社東芝 気相成長方法
JP3093487B2 (ja) 1992-10-28 2000-10-03 松下電子工業株式会社 半導体装置およびその製造方法
US6235858B1 (en) 1992-10-30 2001-05-22 Ppg Industries Ohio, Inc. Aminoplast curable film-forming compositions providing films having resistance to acid etching
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JPH086181B2 (ja) 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
DE4244189C2 (de) 1992-12-24 1995-06-01 Busch Dieter & Co Prueftech Anlegetemperaturfühler
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
CA2114294A1 (en) 1993-01-05 1995-07-27 Thomas Earle Allen Apparatus and method for continuously mixing fluids
US5447294A (en) 1993-01-21 1995-09-05 Tokyo Electron Limited Vertical type heat treatment system
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
JPH06319177A (ja) 1993-02-24 1994-11-15 Hewlett Packard Co <Hp> 適応遠隔制御システム
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JP3348936B2 (ja) 1993-10-21 2002-11-20 東京エレクトロン株式会社 縦型熱処理装置
JP2948437B2 (ja) 1993-03-18 1999-09-13 富士通株式会社 論理シミュレーション用のデータ作成方法
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5305417A (en) 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
US5346961A (en) 1993-04-07 1994-09-13 Union Carbide Chemicals & Plastics Technology Corporation Process for crosslinking
ATE204491T1 (de) 1993-04-17 2001-09-15 Messer Griesheim Austria Ges M Gerät zur kontrollierten zudosierung von no zur atemluft von patienten
JPH06310438A (ja) 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
USD353452S (en) 1993-04-27 1994-12-13 Groenhoff Larry C Window adapter for portable box fans
JP2508581B2 (ja) 1993-05-28 1996-06-19 日本電気株式会社 化学気相成長法
US5501740A (en) 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
DE69415408T2 (de) 1993-06-28 1999-06-10 Canon Kk Wärmeerzeugender, TaNO.8 enthaltender Widerstand, Substrat mit diesem wärmeerzeugenden Widerstand für Flüssigkeitsstrahlkopf, Flüssigkeitsstrahlkopf mit diesem Substrat, und Gerät für einen Flüssigkeitsstrahl mit diesem Flüssigkeitsstrahlkopf
US5997768A (en) 1993-06-29 1999-12-07 Ciba Specialty Chemicals Corporation Pelletization of metal soap powders
US5484484A (en) 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5972196A (en) 1995-06-07 1999-10-26 Lynntech, Inc. Electrochemical production of ozone and hydrogen peroxide
JPH0729836A (ja) 1993-07-14 1995-01-31 Sony Corp プラズマシリコンナイトライド膜の形成方法
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5350480A (en) 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
US5348774A (en) 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
JP3418458B2 (ja) 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
US5418382A (en) 1993-09-23 1995-05-23 Fsi International, Inc. Substrate location and detection apparatus
US5417803A (en) 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
JPH07109576A (ja) 1993-10-07 1995-04-25 Shinko Seiki Co Ltd プラズマｃｖｄによる成膜方法
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5463176A (en) 1994-01-03 1995-10-31 Eckert; C. Edward Liquid waste oxygenation
JPH07209093A (ja) 1994-01-20 1995-08-11 Tokyo Electron Ltd 温度計
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
JPH07225214A (ja) 1994-02-14 1995-08-22 Shimadzu Corp ＮＯｘ計測装置
JP2844304B2 (ja) 1994-02-15 1999-01-06 日本原子力研究所 プラズマ対向材料
US5766365A (en) 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JPH07297271A (ja) 1994-04-22 1995-11-10 Shinko Electric Co Ltd 異サイズのウェ−ハカセットを任意に支持可能な支持機構
US6447232B1 (en) 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
US5431734A (en) 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
RU95106478A (ru) 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5456207A (en) 1994-05-16 1995-10-10 The United States Of America As Represented By The Secretary Of The Navy Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials
US5775889A (en) 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
JP3181171B2 (ja) 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
KR0144956B1 (ko) 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
CN1052116C (zh) 1994-06-15 2000-05-03 精工爱普生株式会社 薄膜半导体器件的制造方法
US5423942A (en) 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5510277A (en) 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US6022414A (en) 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
US5669713A (en) 1994-09-27 1997-09-23 Rosemount Inc. Calibration of process control temperature transmitter
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5514439A (en) 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
DE69511425T2 (de) 1994-11-08 2000-03-09 Vermeer Tech Inc Herstellungshilfe für online-dienste mit gebührenfeststellung
US5562947A (en) 1994-11-09 1996-10-08 Sony Corporation Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US5583736A (en) 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5586585A (en) 1995-02-27 1996-12-24 Asyst Technologies, Inc. Direct loadlock interface
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
AUPN164695A0 (en) 1995-03-10 1995-04-06 Luminis Pty Limited Improved induction nozzle and arrangement
US5662470A (en) 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US5761328A (en) 1995-05-22 1998-06-02 Solberg Creations, Inc. Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements
US5540898A (en) 1995-05-26 1996-07-30 Vasogen Inc. Ozone generator with in-line ozone sensor
US5708825A (en) 1995-05-26 1998-01-13 Iconovex Corporation Automatic summary page creation and hyperlink generation
US5698036A (en) 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5663899A (en) 1995-06-05 1997-09-02 Advanced Micro Devices Redundant thermocouple
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
US5982931A (en) 1995-06-07 1999-11-09 Ishimaru; Mikio Apparatus and method for the manipulation of image containing documents
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
US5685912A (en) 1995-06-20 1997-11-11 Sony Corporation Pressure control system for semiconductor manufacturing equipment
USD392855S (en) 1995-06-26 1998-03-31 Pillow Daryl R Floor protection template for use while spray-painting door frames
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
TW294820B (en) 1995-07-10 1997-01-01 Watkins Johnson Co Gas distribution apparatus
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
JPH0964149A (ja) 1995-08-29 1997-03-07 Hitachi Electron Eng Co Ltd 半導体製造装置
WO1997009737A1 (en) 1995-09-01 1997-03-13 Advanced Semiconductor Materials America, Inc. Wafer support system
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
JP3504784B2 (ja) 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
JPH0989676A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd 電子体温計
US5791782A (en) 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
DE19535178C2 (de) 1995-09-22 2001-07-19 Jenoptik Jena Gmbh Einrichtung zum Ver- und Entriegeln einer Tür eines Behälters
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
DE29517100U1 (de) 1995-10-17 1997-02-13 Zimmer Johannes Strömungsteilungs- und -umformungskörper
TW356554B (en) 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
IL115931A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US5768125A (en) 1995-12-08 1998-06-16 Asm International N.V. Apparatus for transferring a substantially circular article
JPH09172055A (ja) 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5954375A (en) 1995-12-21 1999-09-21 Edstrom Industries, Inc. Sanitary fitting having ferrule with grooved undercut
US5697706A (en) 1995-12-26 1997-12-16 Chrysler Corporation Multi-point temperature probe
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
JPH09205130A (ja) 1996-01-17 1997-08-05 Applied Materials Inc ウェハ支持装置
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
JPH09213772A (ja) 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
US6207936B1 (en) 1996-01-31 2001-03-27 Asm America, Inc. Model-based predictive control of thermal processing
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
JP3769802B2 (ja) 1996-02-09 2006-04-26 株式会社日立製作所 半導体装置の製造方法
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD411516S (en) 1996-03-15 1999-06-29 Tokyo Electron Limited Gas diffusion plate for electrode of semiconductor wafer processing apparatus
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
US5653807A (en) 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US6106678A (en) 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
KR100212132B1 (ko) 1996-04-24 1999-08-02 윤종용 횡형 확산로의 프로파일 열전대
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
USD386076S (en) 1996-05-14 1997-11-11 Camco Manufacturing, Inc. Awning clamp
US5844683A (en) 1996-05-22 1998-12-01 Applied Materials, Inc. Position sensor system for substrate holders
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US6001183A (en) 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6534133B1 (en) 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5801945A (en) 1996-06-28 1998-09-01 Lam Research Corporation Scheduling method for robotic manufacturing processes
US5779203A (en) 1996-06-28 1998-07-14 Edlinger; Erich Adjustable wafer cassette stand
US5950327A (en) 1996-07-08 1999-09-14 Speedfam-Ipec Corporation Methods and apparatus for cleaning and drying wafers
US5915562A (en) 1996-07-12 1999-06-29 Fluoroware, Inc. Transport module with latching door
EP0818671A3 (en) 1996-07-12 1998-07-08 Isuzu Ceramics Research Institute Co., Ltd. A ceramic sheath type thermocouple
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US5700729A (en) 1996-07-15 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Masked-gate MOS S/D implantation
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
EP0821395A3 (en) 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP3122617B2 (ja) 1996-07-19 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5987480A (en) 1996-07-25 1999-11-16 Donohue; Michael Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content
JPH1050800A (ja) 1996-08-05 1998-02-20 Canon Sales Co Inc 処理装置
US5928426A (en) 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
TW344847B (en) 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5857777A (en) 1996-09-25 1999-01-12 Claud S. Gordon Company Smart temperature sensing device
US5880980A (en) 1996-09-30 1999-03-09 Rockwell International Corporation Distributed decimation sample rate conversion
US6048154A (en) 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
KR19980026850A (ko) 1996-10-11 1998-07-15 김광호 웨이퍼의 휨을 검사하는 기능을 갖는 급속 열처리 장비
KR100492258B1 (ko) 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
US5818716A (en) 1996-10-18 1998-10-06 Taiwan Semiconductor Manufacturing Company Ltd. Dynamic lot dispatching required turn rate factory control system and method of operation thereof
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6073973A (en) 1996-10-31 2000-06-13 Stanley Aviation Corporation Lightweight positive lock coupling
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US6126744A (en) 1996-11-18 2000-10-03 Asm America, Inc. Method and system for adjusting semiconductor processing equipment
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
JP3740587B2 (ja) 1996-11-25 2006-02-01 山里産業株式会社 熱電対
CN1186873A (zh) 1996-11-26 1998-07-08 西门子公司 带多个气体入口和独立质流控制回路的反应室的分布板
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
US5753835A (en) 1996-12-12 1998-05-19 Caterpillar Inc. Receptacle for holding a sensing device
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US5984391A (en) 1997-02-03 1999-11-16 Novellus Systems, Inc. Microfeature wafer handling apparatus and methods
US5893741A (en) 1997-02-07 1999-04-13 National Science Council Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
US20020174106A1 (en) 1997-02-10 2002-11-21 Actioneer, Inc. Method and apparatus for receiving information in response to a request
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3492135B2 (ja) 1997-02-13 2004-02-03 三菱重工業株式会社 熱流束計
US6127249A (en) 1997-02-20 2000-10-03 Micron Technology, Inc. Metal silicidation methods and methods for using same
US6447937B1 (en) 1997-02-26 2002-09-10 Kyocera Corporation Ceramic materials resistant to halogen plasma and components using the same
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
JPH10239165A (ja) 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
DE69816277T2 (de) 1997-02-28 2004-06-03 Extraction Systems, Inc., Franklin System zum nachweis von aminen und anderen basischen molekularen verumreinigungen in einem gas
US6096267A (en) 1997-02-28 2000-08-01 Extraction Systems, Inc. System for detecting base contaminants in air
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
JP3124506B2 (ja) 1997-03-14 2001-01-15 白光株式会社 ヒータ・センサ複合体
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6214122B1 (en) 1997-03-17 2001-04-10 Motorola, Inc. Rapid thermal processing susceptor
US6287988B1 (en) 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
JPH10261620A (ja) 1997-03-19 1998-09-29 Hitachi Ltd 表面処理装置
US5872065A (en) 1997-04-02 1999-02-16 Applied Materials Inc. Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry
US6891138B2 (en) 1997-04-04 2005-05-10 Robert C. Dalton Electromagnetic susceptors with coatings for artificial dielectric systems and devices
US5865205A (en) 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
US6190113B1 (en) 1997-04-30 2001-02-20 Applied Materials, Inc. Quartz pin lift for single wafer chemical vapor deposition/etch process chamber
NL1005963C2 (nl) 1997-05-02 1998-11-09 Asm Int Verticale oven voor het behandelen van halfgeleidersubstraten.
US6053983A (en) 1997-05-08 2000-04-25 Tokyo Electron, Ltd. Wafer for carrying semiconductor wafers and method detecting wafers on carrier
US5904170A (en) 1997-05-14 1999-05-18 Applied Materials, Inc. Pressure flow and concentration control of oxygen/ozone gas mixtures
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
US6390754B2 (en) 1997-05-21 2002-05-21 Tokyo Electron Limited Wafer processing apparatus, method of operating the same and wafer detecting system
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US6104401A (en) 1997-06-12 2000-08-15 Netscape Communications Corporation Link filters
EP0887632A1 (en) 1997-06-24 1998-12-30 Isuzu Ceramics Research Institute Co., Ltd. A ceramic thermocouple for measuring temperature of molten metal
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US5759281A (en) 1997-06-30 1998-06-02 Emcore Corporation CVD reactor for uniform heating with radiant heating filaments
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US5827420A (en) 1997-07-29 1998-10-27 World Precision Instruments, Inc. Method and apparatus for the generation of nitric oxide
US6135460A (en) 1997-07-31 2000-10-24 Texas Instruments Incorporated Method of and apparatus for purifying reduced pressure process chambers
US5884640A (en) 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6321680B2 (en) 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
US6121158A (en) 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
US6530994B1 (en) 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
USD404372S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Ring for use in a semiconductor wafer heat processing apparatus
USD404370S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Cap for use in a semiconductor wafer heat processing apparatus
US6242359B1 (en) 1997-08-20 2001-06-05 Air Liquide America Corporation Plasma cleaning and etching methods using non-global-warming compounds
KR100253664B1 (ko) 1997-08-22 2000-04-15 이해광 폴리이미드 건조기의 작동 시스템
US6104011A (en) 1997-09-04 2000-08-15 Watlow Electric Manufacturing Company Sheathed thermocouple with internal coiled wires
AUPO904597A0 (en) 1997-09-08 1997-10-02 Canon Information Systems Research Australia Pty Ltd Method for non-linear document conversion and printing
US6027163A (en) 1997-09-10 2000-02-22 Graco Children's Products Inc. Juvenile carrier with moveable canopy
JP3581537B2 (ja) 1997-09-24 2004-10-27 三菱重工業株式会社 高周波加熱コイルの設置間隙保持装置
US6348376B2 (en) 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
AU1269499A (en) 1997-10-07 1999-04-27 Electronics Development Corporation Transducer assembly with smart connector
JPH11118615A (ja) 1997-10-09 1999-04-30 Kakunenryo Cycle Kaihatsu Kiko 伸縮性を有する被測定物用温度センサ
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
EP1036406B1 (en) 1997-11-03 2003-04-02 ASM America, Inc. Improved low mass wafer support system
JP4475804B2 (ja) 1997-11-03 2010-06-09 エーエスエム アメリカ インコーポレイテッド 長寿命高温プロセスチャンバ
WO1999023690A1 (en) 1997-11-03 1999-05-14 Asm America, Inc. Method of processing wafers with low mass support
JPH11140648A (ja) 1997-11-07 1999-05-25 Tokyo Electron Ltd プロセスチャンバ装置及び処理装置
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
GB9724168D0 (en) 1997-11-14 1998-01-14 Air Prod & Chem Gas control device and method of supplying gas
US6068441A (en) 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6574644B2 (en) 1997-11-26 2003-06-03 Siemens Corporate Research, Inc Automatic capturing of hyperlink specifications for multimedia documents
JP2002504744A (ja) 1997-11-28 2002-02-12 マットソン テクノロジイ インコーポレイテッド 真空処理を行う非加工物を、低汚染かつ高処理能力で取扱うためのシステムおよび方法
WO1999028952A2 (en) 1997-11-28 1999-06-10 Fortrend Engineering Corporation Wafer-mapping load port interface
US6432479B2 (en) 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
KR100295043B1 (ko) 1997-12-03 2001-10-19 윤종용 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법
JPH11319545A (ja) 1997-12-15 1999-11-24 Canon Inc プラズマ処理方法及び基体の処理方法
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
JPH11183264A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11183265A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
US6099649A (en) 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
JPH11195688A (ja) 1997-12-26 1999-07-21 Mc Electronics Kk 基板処理装置
USD409894S (en) 1997-12-30 1999-05-18 Mcclurg Ben B Sheet rock plug
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
JP3314151B2 (ja) 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
WO1999036336A1 (en) 1998-01-16 1999-07-22 Pri Automation, Inc. Semiconductor wafer cassette positioning and detection mechanism
US6091062A (en) 1998-01-27 2000-07-18 Kinetrix, Inc. Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
TWI237305B (en) 1998-02-04 2005-08-01 Nikon Corp Exposure apparatus and positioning apparatus of substrate receiving cassette
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
US6072163A (en) 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US7181501B2 (en) 1998-03-19 2007-02-20 Isochron, Inc. Remote data acquisition, transmission and analysis system including handheld wireless equipment
WO1999049705A1 (fr) 1998-03-20 1999-09-30 Tokyo Electron Limited Dispositif de traitement plasmique
JP3656701B2 (ja) 1998-03-23 2005-06-08 東京エレクトロン株式会社 処理装置
JP3554219B2 (ja) 1998-03-31 2004-08-18 キヤノン株式会社 排気装置と排気方法、および堆積膜形成装置と堆積膜形成方法
JPH11287715A (ja) 1998-04-02 1999-10-19 Canon Inc 熱電対
SE9801190D0 (sv) 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR100265287B1 (ko) 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6079927A (en) 1998-04-22 2000-06-27 Varian Semiconductor Equipment Associates, Inc. Automated wafer buffer for use with wafer processing equipment
KR100376984B1 (ko) 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6060721A (en) 1998-05-06 2000-05-09 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for detecting correct positioning of a wafer cassette
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US20010016273A1 (en) 1998-05-08 2001-08-23 Krishnan Narasimhan Multilayer cvd coated article and process for producing same
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
JP2002515648A (ja) 1998-05-11 2002-05-28 セミトゥール・インコーポレイテッド 加熱反応炉の温度制御システム
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
US6284050B1 (en) 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6146463A (en) 1998-06-12 2000-11-14 Applied Materials, Inc. Apparatus and method for aligning a substrate on a support member
US20020009861A1 (en) 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
USD412512S (en) 1998-06-24 1999-08-03 Marc H Boisvert Tool holding device
JP3333135B2 (ja) 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6015459A (en) 1998-06-26 2000-01-18 Extreme Devices, Inc. Method for doping semiconductor materials
JP3472482B2 (ja) 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
US6344232B1 (en) 1998-07-30 2002-02-05 The United States Of America As Represented By The Secretary Of The Air Force Computer controlled temperature and oxygen maintenance for fiber coating CVD
USD412270S (en) 1998-08-10 1999-07-27 David Frank Fredrickson Article lifter
JP2000068355A (ja) 1998-08-21 2000-03-03 Dainippon Screen Mfg Co Ltd 基板処理装置
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6427622B2 (en) 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
EP1038996B1 (en) 1998-09-11 2007-09-05 Japan Science and Technology Agency Combinatorial molecular layer epitaxy device
US6284149B1 (en) 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
US6187672B1 (en) 1998-09-22 2001-02-13 Conexant Systems, Inc. Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
KR100646906B1 (ko) 1998-09-22 2006-11-17 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6257758B1 (en) 1998-10-09 2001-07-10 Claud S. Gordon Company Surface temperature sensor
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6462671B2 (en) 1998-10-20 2002-10-08 Brendyl Trent Bushner Remote securities based data reception and order system
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6063196A (en) 1998-10-30 2000-05-16 Applied Materials, Inc. Semiconductor processing chamber calibration tool
KR100317238B1 (ko) 1998-11-03 2002-02-19 윤종용 가열로 온도검출용 스파이크 열전대 소자_
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP3664897B2 (ja) 1998-11-18 2005-06-29 東京エレクトロン株式会社 縦型熱処理装置
US6143079A (en) 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
DE19956531A1 (de) 1998-11-27 2000-05-31 Hyundai Electronics Ind Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
JP3375294B2 (ja) 1998-12-17 2003-02-10 東京エレクトロン株式会社 処理装置、処理システムおよび該装置における清浄エアの供給方法
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6496819B1 (en) 1998-12-28 2002-12-17 Oracle Corporation Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability
KR100281094B1 (ko) 1998-12-30 2001-02-01 서평원 이동 통신 시스템에서 셀 탐색 방법
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
JP3119641B2 (ja) 1999-01-19 2000-12-25 九州日本電気株式会社 縦型熱処理装置
US6490493B1 (en) 1999-01-21 2002-12-03 Rosemount Inc. Industrial process device management software
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP2987148B1 (ja) 1999-01-26 1999-12-06 国際電気株式会社 基板処理装置
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
AU3229600A (en) 1999-02-12 2000-08-29 Gelest, Inc. Chemical vapor deposition of tungsten nitride
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
US6190037B1 (en) 1999-02-19 2001-02-20 Applied Materials, Inc. Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
JP2000249058A (ja) 1999-02-26 2000-09-12 Ebara Corp トラップ装置
EP1161572B1 (de) 1999-03-03 2003-06-18 Widia GmbH Schneideinsatz zum zerspanen von metallischen werkstoffen mit einer molybdänsulfid enthaltenden beschichtung und verfahren zu dessen herstellung
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
JP3250154B2 (ja) 1999-03-31 2002-01-28 株式会社スーパーシリコン研究所 半導体ウエハ製造装置
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
TW465017B (en) 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
EP1090417A1 (en) 1999-04-20 2001-04-11 Tokyo Electron Limited Method for single chamber processing of pecvd-ti and cvd-tin films in ic manufacturing
US6410433B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
US7588720B2 (en) 1999-04-30 2009-09-15 Tso3, Inc. Method and apparatus for ozone sterilization
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP2000323487A (ja) 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
JP2000329447A (ja) 1999-05-17 2000-11-30 Matsushita Refrig Co Ltd 冷蔵庫および除霜用ヒーター
US6423949B1 (en) 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6617553B2 (en) 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
WO2000074117A1 (en) 1999-05-27 2000-12-07 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
KR100495551B1 (ko) 1999-05-28 2005-06-16 동경 엘렉트론 주식회사 반도체 처리 시스템의 오존 처리 장치
US20020033183A1 (en) 1999-05-29 2002-03-21 Sheng Sun Method and apparatus for enhanced chamber cleaning
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP3940546B2 (ja) 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
US6656281B1 (en) 1999-06-09 2003-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6548402B2 (en) 1999-06-11 2003-04-15 Applied Materials, Inc. Method of depositing a thick titanium nitride film
US6281098B1 (en) 1999-06-15 2001-08-28 Midwest Research Institute Process for Polycrystalline film silicon growth
JP2001004062A (ja) 1999-06-17 2001-01-09 Benkan Corp 流量制御用バルブ
US6528752B1 (en) 1999-06-18 2003-03-04 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
JP4726369B2 (ja) 1999-06-19 2011-07-20 エー・エス・エムジニテックコリア株式会社 化学蒸着反応炉及びこれを利用した薄膜形成方法
US6812157B1 (en) 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
US6587108B1 (en) 1999-07-01 2003-07-01 Honeywell Inc. Multivariable process matrix display and methods regarding same
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
US6151446A (en) 1999-07-06 2000-11-21 Applied Materials, Inc. Apparatus and method for thermally processing substrates including a processor using multiple detection signals
US6214121B1 (en) 1999-07-07 2001-04-10 Applied Materials, Inc. Pedestal with a thermally controlled platen
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP2001023872A (ja) 1999-07-09 2001-01-26 Hitachi Ltd 半導体基板処理装置
US6375749B1 (en) 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6368988B1 (en) 1999-07-16 2002-04-09 Micron Technology, Inc. Combined gate cap or digit line and spacer deposition using HDP
FI110311B (fi) 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
US7381944B2 (en) 2004-04-28 2008-06-03 Sionex Corporation Systems and methods for ion species analysis with enhanced condition control and data interpretation
JP3701148B2 (ja) 1999-07-28 2005-09-28 株式会社日立製作所 コンテンツの配信方法
US6867859B1 (en) 1999-08-03 2005-03-15 Lightwind Corporation Inductively coupled plasma spectrometer for process diagnostics and control
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
EP1077477B1 (en) 1999-08-17 2008-12-17 Applied Materials, Inc. Surface treatment of C-doped SiO2 film to enhance film stability during O2 ashing
KR100557594B1 (ko) 1999-08-17 2006-03-10 주식회사 하이닉스반도체 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
US6410459B2 (en) 1999-09-02 2002-06-25 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6238636B1 (en) 1999-09-03 2001-05-29 Air Liquide America Corporation Process and systems for purification of boron trichloride
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US7894474B1 (en) 1999-09-10 2011-02-22 Koninklijke Philips Electronics N.V. Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US7066703B2 (en) 1999-09-29 2006-06-27 Tokyo Electron Limited Chuck transport method and system
US6296710B1 (en) 1999-10-06 2001-10-02 Advanced Micro Devices, Inc. Multi-port gas injector for a vertical furnace used in semiconductor processing
US7010580B1 (en) 1999-10-08 2006-03-07 Agile Software Corp. Method and apparatus for exchanging data in a platform independent manner
US6503758B1 (en) 1999-10-12 2003-01-07 President & Fellows Of Harvard College Systems and methods for measuring nitrate levels
CN1192222C (zh) 1999-10-13 2005-03-09 德士古发展公司 蓝宝石增强热电偶保护管
US6475276B1 (en) 1999-10-15 2002-11-05 Asm Microchemistry Oy Production of elemental thin films using a boron-containing reducing agent
US6391385B1 (en) 1999-10-18 2002-05-21 Advanced Technology Materials, Inc. Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents
US6500487B1 (en) 1999-10-18 2002-12-31 Advanced Technology Materials, Inc Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US6287913B1 (en) 1999-10-26 2001-09-11 International Business Machines Corporation Double polysilicon process for providing single chip high performance logic and compact embedded memory structure
KR100340716B1 (ko) 1999-10-29 2002-06-20 윤종용 실리콘 질화막 형성방법
KR20010045418A (ko) 1999-11-05 2001-06-05 박종섭 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP3551867B2 (ja) 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
KR100547248B1 (ko) 1999-11-12 2006-02-01 주식회사 하이닉스반도체 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
EP1107512A1 (en) 1999-12-03 2001-06-13 Sony International (Europe) GmbH Communication device and software for operating multimedia applications
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
EP1245036B1 (en) 1999-12-13 2013-06-19 Semequip, Inc. Ion implantation ion source
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
US7055094B2 (en) 1999-12-30 2006-05-30 Rutgers, The State University Of New Jersey Virtual tags and the process of virtual tagging utilizing user feedback in transformation rules
US6335049B1 (en) 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
TW473792B (en) 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP2001203211A (ja) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc 水素アニール処理方法及びその装置
JP2001207268A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
JP4384770B2 (ja) 2000-01-27 2009-12-16 株式会社日立国際電気 基板処理装置
JP2001207265A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
JP4174941B2 (ja) 2000-02-03 2008-11-05 株式会社デンソー 薄膜製造方法及び薄膜製造装置
US6521046B2 (en) 2000-02-04 2003-02-18 Kabushiki Kaisha Kobe Seiko Sho Chamber material made of Al alloy and heater block
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
US20020009119A1 (en) 2000-02-11 2002-01-24 Matthew William T. Environmental heat stress monitor
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100520188B1 (ko) 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
US6846711B2 (en) 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
KR100803770B1 (ko) 2000-03-07 2008-02-15 에이에스엠 인터내셔널 엔.브이. 구배（ｇｒａｄｅｄ）박막
US7419903B2 (en) 2000-03-07 2008-09-02 Asm International N.V. Thin films
JP4054159B2 (ja) 2000-03-08 2008-02-27 東京エレクトロン株式会社 基板処理方法及びその装置
US6455098B2 (en) 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
US6917845B2 (en) 2000-03-10 2005-07-12 Smiths Detection-Pasadena, Inc. Method for monitoring environmental condition using a mathematical model
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
JP3438696B2 (ja) 2000-03-13 2003-08-18 松下電器産業株式会社 プラズマ処理方法及び装置
US6506009B1 (en) 2000-03-16 2003-01-14 Applied Materials, Inc. Apparatus for storing and moving a cassette
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
AT412302B (de) 2000-03-28 2004-12-27 Hoerbiger Ventilwerke Gmbh Selbsttätiges ventil
JP3676983B2 (ja) 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
WO2001075188A2 (en) 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP4281208B2 (ja) 2000-04-04 2009-06-17 ソニー株式会社 ロボット遠隔制御システム
ATE342384T1 (de) 2000-04-06 2006-11-15 Asm Inc Sperrschicht für glasartige werkstoffe
US7011710B2 (en) 2000-04-10 2006-03-14 Applied Materials Inc. Concentration profile on demand gas delivery system (individual divert delivery system)
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
TW576873B (en) 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
US6451713B1 (en) 2000-04-17 2002-09-17 Mattson Technology, Inc. UV pretreatment process for ultra-thin oxynitride formation
US6641350B2 (en) 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US6952656B1 (en) 2000-04-28 2005-10-04 Applied Materials, Inc. Wafer fabrication data acquisition and management systems
JP2001313329A (ja) 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
US7141768B2 (en) 2000-04-28 2006-11-28 Nexicor, Llc Fastening device
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP2001319921A (ja) 2000-05-09 2001-11-16 Canon Inc プロセスチャンバ
US6553932B2 (en) 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020195056A1 (en) 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US20020078893A1 (en) 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP4449226B2 (ja) 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
TW578214B (en) 2000-05-29 2004-03-01 Tokyo Electron Ltd Method of forming oxynitride film or the like and system for carrying out the same
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
EP1160838B1 (en) 2000-05-31 2007-12-05 Tokyo Electron Limited Heat treatment system and method
US6998097B1 (en) 2000-06-07 2006-02-14 Tegal Corporation High pressure chemical vapor trapping system
EP2293322A1 (en) 2000-06-08 2011-03-09 Genitech, Inc. Method for forming a metal nitride layer
USD455024S1 (en) 2000-06-09 2002-04-02 Levenger Company Portable writing surface
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
EP1214734B1 (en) 2000-06-15 2006-09-27 Koninklijke Philips Electronics N.V. Holder for a substrate cassette and device provided with such a holder
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6346419B1 (en) 2000-06-26 2002-02-12 The United States Of America As Represented By The Department Of Commerce Photolysis system for fast-response NO2 measurements and method therefor
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
KR100546138B1 (ko) 2000-06-30 2006-01-24 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
WO2002008831A2 (en) 2000-07-06 2002-01-31 Pri Automation, Inc. Reticle storage and retrieval system
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
JP3485896B2 (ja) 2000-07-11 2004-01-13 東京エレクトロン株式会社 プラズマ処理装置
JP2002164342A (ja) 2000-07-21 2002-06-07 Canon Sales Co Inc 半導体装置及びその製造方法
WO2002008487A1 (en) 2000-07-24 2002-01-31 The University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
JP4357715B2 (ja) 2000-07-24 2009-11-04 東京エレクトロン株式会社 熱処理装置の温度校正方法
US6450117B1 (en) 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6712929B1 (en) 2000-08-08 2004-03-30 Lam Research Corporation Deformation reduction at the main chamber
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
US20020136214A1 (en) 2000-08-14 2002-09-26 Consumer Direct Link Pervasive computing network architecture
US6437290B1 (en) 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
WO2002017374A1 (en) 2000-08-18 2002-02-28 Tokyo Electron Limited Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
US6451692B1 (en) 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
JP4150493B2 (ja) 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP4365017B2 (ja) 2000-08-23 2009-11-18 東京エレクトロン株式会社 熱処理装置の降温レート制御方法および熱処理装置
US6566278B1 (en) 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
EP1251551A1 (en) 2000-08-30 2002-10-23 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting equipment
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
KR20020019414A (ko) 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
JP4232330B2 (ja) 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
JP3929261B2 (ja) 2000-09-25 2007-06-13 株式会社日立国際電気 基板処理装置および基板処理方法
US6494065B2 (en) 2000-09-26 2002-12-17 Babbitt Steam Specialty Company Valve lockout/tag out system
US6632068B2 (en) 2000-09-27 2003-10-14 Asm International N.V. Wafer handling system
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
US6969539B2 (en) 2000-09-28 2005-11-29 President And Fellows Of Harvard College Vapor deposition of metal oxides, silicates and phosphates, and silicon dioxide
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
AU146328S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
US6745095B1 (en) 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
JP2002110570A (ja) 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
JP2002122570A (ja) * 2000-10-13 2002-04-26 Nippon Sanso Corp ガス中の微量不純物の分析方法及び装置
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
TW548239B (en) 2000-10-23 2003-08-21 Asm Microchemistry Oy Process for producing aluminium oxide films at low temperatures
US6395650B1 (en) 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
JP3408527B2 (ja) 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US7032614B2 (en) 2000-11-03 2006-04-25 Applied Materials, Inc. Facilities connection box for pre-facilitation of wafer fabrication equipment
US6649540B2 (en) 2000-11-09 2003-11-18 The Boc Group, Inc. Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
JP3610900B2 (ja) 2000-11-30 2005-01-19 東京エレクトロン株式会社 熱処理装置
KR100688484B1 (ko) 2000-11-30 2007-02-28 삼성전자주식회사 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법
US20020069222A1 (en) 2000-12-01 2002-06-06 Wiznet, Inc. System and method for placing active tags in HTML document
JP3939101B2 (ja) 2000-12-04 2007-07-04 株式会社荏原製作所 基板搬送方法および基板搬送容器
US6913152B2 (en) 2000-12-04 2005-07-05 Peter Zuk, Jr. Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples
JP3650025B2 (ja) 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP2002237375A (ja) 2000-12-05 2002-08-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
EP1351283A4 (en) 2000-12-05 2006-01-25 Tokyo Electron Ltd METHOD AND DEVICE FOR TREATING AN ARTICLE TO BE TREATED
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6930041B2 (en) 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
TWI313059B (ko) 2000-12-08 2009-08-01 Sony Corporatio
AU2002221122A1 (en) 2000-12-12 2002-06-24 Tokyo Electron Limited Thin film forming method and thin film forming device
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6641673B2 (en) 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
US6544906B2 (en) 2000-12-21 2003-04-08 Texas Instruments Incorporated Annealing of high-k dielectric materials
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US20020151327A1 (en) 2000-12-22 2002-10-17 David Levitt Program selector and guide system and method
US20020152244A1 (en) 2000-12-22 2002-10-17 International Business Machines Corporation Method and apparatus to dynamically create a customized user interface based on a document type definition
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US6572923B2 (en) 2001-01-12 2003-06-03 The Boc Group, Inc. Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
JP4633269B2 (ja) 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
WO2002058130A1 (fr) 2001-01-22 2002-07-25 Tokyo Electron Limited Procede de production
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
KR20060009395A (ko) 2001-01-25 2006-01-31 동경 엘렉트론 주식회사 기판의 처리 방법
JP4429300B2 (ja) 2001-01-25 2010-03-10 東京エレクトロン株式会社 電子デバイス材料の製造方法
US6660662B2 (en) 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
KR20020064028A (ko) 2001-01-31 2002-08-07 한빛 세마텍(주) 펄스형 자외선조사에 의한 세정 및 표면처리 장치
WO2002063535A2 (en) 2001-02-07 2002-08-15 Exalt Solutions, Inc. Intelligent multimedia e-catalog
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
KR101050377B1 (ko) 2001-02-12 2011-07-20 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
US7072061B2 (en) 2001-02-13 2006-07-04 Ariba, Inc. Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
KR100410991B1 (ko) 2001-02-22 2003-12-18 삼성전자주식회사 반도체 제조장치의 로드포트
JP3494435B2 (ja) 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
TW544775B (en) 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US20020123237A1 (en) 2001-03-05 2002-09-05 Tue Nguyen Plasma pulse semiconductor processing system and method
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US6939579B2 (en) 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6447651B1 (en) 2001-03-07 2002-09-10 Applied Materials, Inc. High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
US7111232B1 (en) 2001-03-07 2006-09-19 Thomas Layne Bascom Method and system for making document objects available to users of a network
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4727057B2 (ja) 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6723654B2 (en) 2001-03-30 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
TW540093B (en) 2001-04-05 2003-07-01 Angstron Systems Inc Atomic layer deposition system and method
US6902622B2 (en) 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
US7125783B2 (en) 2001-04-18 2006-10-24 Integrated Device Technology, Inc. Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean
JP2002317287A (ja) 2001-04-18 2002-10-31 Permelec Electrode Ltd 過酸化水素製造用電解槽及び過酸化水素製造方法
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
TW538327B (en) 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US6753507B2 (en) 2001-04-27 2004-06-22 Kyocera Corporation Wafer heating apparatus
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
US6602800B2 (en) 2001-05-09 2003-08-05 Asm Japan K.K. Apparatus for forming thin film on semiconductor substrate by plasma reaction
KR20020086763A (ko) 2001-05-10 2002-11-20 주식회사 엘지이아이 플라즈마를 이용한 연속중합장치용 열전대
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
JP2003053688A (ja) 2001-05-15 2003-02-26 Fanuc Robotics North America Inc 教示ペンダントを有するロボット・システム
DE10156441A1 (de) 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6810886B2 (en) 2001-05-24 2004-11-02 Applied Materials, Inc. Chamber cleaning via rapid thermal process during a cleaning period
US7159597B2 (en) 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
GB0113735D0 (en) 2001-06-05 2001-07-25 Holset Engineering Co Mixing fluid streams
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
US6955928B1 (en) 2001-06-18 2005-10-18 Advanced Micro Devices, Inc. Closed loop residual gas analyzer process control technique
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6514313B1 (en) 2001-06-22 2003-02-04 Aeronex, Inc. Gas purification system and method
US20030002562A1 (en) 2001-06-27 2003-01-02 Yerlikaya Y. Denis Temperature probe adapter
KR20030001939A (ko) 2001-06-28 2003-01-08 동부전자 주식회사 반도체소자의 장벽층 형성 방법 및 장치
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
US20030003696A1 (en) 2001-06-29 2003-01-02 Avgerinos Gelatos Method and apparatus for tuning a plurality of processing chambers
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
DE10133013C2 (de) 2001-07-06 2003-07-03 Karlsruhe Forschzent Verschluss für Hohlräume oder Durchführungen
US7179752B2 (en) 2001-07-10 2007-02-20 Tokyo Electron Limited Dry etching method
US6746308B1 (en) 2001-07-11 2004-06-08 Advanced Micro Devices, Inc. Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
US6868856B2 (en) 2001-07-13 2005-03-22 Applied Materials, Inc. Enhanced remote plasma cleaning
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030017268A1 (en) 2001-07-18 2003-01-23 Applied Materials, Inc. .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity
JP3926588B2 (ja) 2001-07-19 2007-06-06 キヤノンマーケティングジャパン株式会社 半導体装置の製造方法
JP2003035574A (ja) 2001-07-23 2003-02-07 Mitsubishi Heavy Ind Ltd 応答型センサ及び応用計測システム
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6435865B1 (en) 2001-07-30 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for positioning gas injectors in a vertical furnace
WO2003012843A1 (fr) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et appareil de nettoyage et procede et appareil de gravure
JP4236882B2 (ja) 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
JP3958539B2 (ja) 2001-08-02 2007-08-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6678583B2 (en) 2001-08-06 2004-01-13 Seminet, Inc. Robotic storage buffer system for substrate carrier pods
JP2003060012A (ja) 2001-08-08 2003-02-28 Asm Japan Kk 半導体処理用反応チャンバ
JP3775262B2 (ja) 2001-08-09 2006-05-17 ヤマハ株式会社 電子楽器及び電子楽器システム
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
TW559905B (en) 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US20030035002A1 (en) 2001-08-15 2003-02-20 Samsung Electronics Co., Ltd. Alternate interpretation of markup language documents
USD699816S1 (en) 2001-08-17 2014-02-18 Neoperl Gmbh Stream straightener for faucet
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
KR100604751B1 (ko) 2001-08-24 2006-07-26 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물
US20030037800A1 (en) 2001-08-27 2003-02-27 Applied Materials, Inc. Method for removing contamination particles from substrate processing chambers
KR20030018134A (ko) 2001-08-27 2003-03-06 한국전자통신연구원 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법
JP3886424B2 (ja) 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP3832294B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP2003077782A (ja) 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP3832293B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP4460803B2 (ja) 2001-09-05 2010-05-12 パナソニック株式会社 基板表面処理方法
JP2003077845A (ja) 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
JP2003158127A (ja) 2001-09-07 2003-05-30 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
JP4094262B2 (ja) 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
AU2002333601A1 (en) 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
JP2003100717A (ja) 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6782305B2 (en) 2001-10-01 2004-08-24 Massachusetts Institute Of Technology Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6656282B2 (en) 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6936183B2 (en) 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
JP2003133300A (ja) 2001-10-26 2003-05-09 Tokyo Electron Ltd 成膜装置及び成膜方法
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
JP4615859B2 (ja) 2001-10-26 2011-01-19 アプライド マテリアルズ インコーポレイテッド 原子層堆積のためのガス配送装置
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6902624B2 (en) 2001-10-29 2005-06-07 Genus, Inc. Massively parallel atomic layer deposition/chemical vapor deposition system
US20040253867A1 (en) 2001-11-05 2004-12-16 Shuzo Matsumoto Circuit part connector structure and gasket
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR100782529B1 (ko) 2001-11-08 2007-12-06 에이에스엠지니텍코리아 주식회사 증착 장치
KR100481307B1 (ko) 2001-11-08 2005-04-07 삼성전자주식회사 반도체 제조 설비의 카세트 테이블
EP1446408A1 (en) 2001-11-09 2004-08-18 Yun Chi Volatile noble metal organometallic complexes
US6975921B2 (en) 2001-11-09 2005-12-13 Asm International Nv Graphical representation of a wafer processing process
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
US20040010772A1 (en) 2001-11-13 2004-01-15 General Electric Company Interactive method and system for faciliting the development of computer software applications
WO2003044843A2 (en) 2001-11-16 2003-05-30 Trikon Holdings Limited Forming low k dielectric layers
JP2003153706A (ja) 2001-11-20 2003-05-27 Toyobo Co Ltd 面ファスナー雌材及びその製造方法
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
AU2002349589A1 (en) 2001-11-30 2003-06-10 Matsushita Electric Industrial Co., Ltd. Semiconductor device and production method therefor
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
KR100641762B1 (ko) 2001-12-07 2006-11-06 동경 엘렉트론 주식회사 절연막의 질화 방법, 반도체 장치 및 반도체 장치의 제조방법, 기판 처리 장치 및 기판 처리 방법
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
SE0104252D0 (sv) 2001-12-17 2001-12-17 Sintercast Ab New device
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
KR100442104B1 (ko) 2001-12-27 2004-07-27 삼성전자주식회사 커패시터를 갖는 반도체 소자의 제조방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US6497734B1 (en) 2002-01-02 2002-12-24 Novellus Systems, Inc. Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
CN100373559C (zh) 2002-01-15 2008-03-05 东京毅力科创株式会社 形成含硅绝缘膜的cvd方法和装置
US6580050B1 (en) 2002-01-16 2003-06-17 Pace, Incorporated Soldering station with built-in self-calibration function
JP4071968B2 (ja) 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
CN1643179B (zh) 2002-01-17 2010-05-26 松德沃技术公司 Ald装置和方法
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
DE10203838B4 (de) 2002-01-31 2006-12-28 Infineon Technologies Ag Fluorhaltiger Fotoresist mit Reaktionsankern für eine chemische Nachverstärkung und verbesserten Copolymerisationseigenschaften
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
KR100377095B1 (en) 2002-02-01 2003-03-20 Nexo Co Ltd Semiconductor fabrication apparatus using low energy plasma
US6732006B2 (en) 2002-02-06 2004-05-04 Asm International Nv Method and system to process semiconductor wafers
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
JP2003243481A (ja) 2002-02-21 2003-08-29 Asm Japan Kk 半導体製造装置及びメンテナンス方法
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
NL1020054C2 (nl) 2002-02-25 2003-09-05 Asm Int Inrichting voor het behandelen van wafers, voorzien van een meetmiddelendoos.
US20030159653A1 (en) 2002-02-28 2003-08-28 Dando Ross S. Manifold assembly for feeding reactive precursors to substrate processing chambers
US20030170583A1 (en) 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
KR100997699B1 (ko) 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
US6596973B1 (en) 2002-03-07 2003-07-22 Asm America, Inc. Pyrometer calibrated wafer temperature estimator
US20030168012A1 (en) 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6835039B2 (en) 2002-03-15 2004-12-28 Asm International N.V. Method and apparatus for batch processing of wafers in a furnace
US6746240B2 (en) 2002-03-15 2004-06-08 Asm International N.V. Process tube support sleeve with circumferential channels
US6902395B2 (en) 2002-03-15 2005-06-07 Asm International, N.V. Multilevel pedestal for furnace
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US20030173346A1 (en) 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
JP4157914B2 (ja) 2002-03-20 2008-10-01 坂野 數仁 温度測定装置及び温度測定方法
US6780787B2 (en) 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US20030178145A1 (en) 2002-03-25 2003-09-25 Applied Materials, Inc. Closed hole edge lift pin and susceptor for wafer process chambers
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
JP4959921B2 (ja) 2002-03-28 2012-06-27 プレジデント アンド フェロウズ オブ ハーバード カレッジ 二酸化珪素ナノラミネートの蒸着
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
DE10214066B4 (de) 2002-03-28 2007-02-01 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben
JP4001498B2 (ja) 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
US20030231698A1 (en) 2002-03-29 2003-12-18 Takatomo Yamaguchi Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
KR20030081144A (ko) 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
JP4092937B2 (ja) 2002-04-11 2008-05-28 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
WO2003089682A1 (en) 2002-04-19 2003-10-30 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
KR100439948B1 (ko) 2002-04-19 2004-07-12 주식회사 아이피에스 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법
US6825126B2 (en) 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
KR100472730B1 (ko) 2002-04-26 2005-03-08 주식회사 하이닉스반도체 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US7086347B2 (en) 2002-05-06 2006-08-08 Lam Research Corporation Apparatus and methods for minimizing arcing in a plasma processing chamber
US20030209326A1 (en) 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
KR100437458B1 (ko) 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
JP4338355B2 (ja) 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
US7074298B2 (en) 2002-05-17 2006-07-11 Applied Materials High density plasma CVD chamber
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US6797525B2 (en) 2002-05-22 2004-09-28 Agere Systems Inc. Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
US6902656B2 (en) 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
KR20030092305A (ko) 2002-05-29 2003-12-06 삼성전자주식회사 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
JP4311914B2 (ja) 2002-06-05 2009-08-12 住友電気工業株式会社 半導体製造装置用ヒータモジュール
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
WO2003104524A1 (ja) 2002-06-10 2003-12-18 東京エレクトロン株式会社 処理装置及び処理方法
US6849464B2 (en) 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
JP2004022902A (ja) 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
KR100455297B1 (ko) 2002-06-19 2004-11-06 삼성전자주식회사 무기물 나노튜브 제조방법
WO2004001804A2 (en) 2002-06-19 2003-12-31 Ziegler Byron J Device for generation of reactive ions
JP3670628B2 (ja) 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
TWI278532B (en) 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6552209B1 (en) 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
JP3999059B2 (ja) 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
US7255775B2 (en) 2002-06-28 2007-08-14 Toshiba Ceramics Co., Ltd. Semiconductor wafer treatment member
US6827789B2 (en) 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US7356762B2 (en) 2002-07-08 2008-04-08 Asm International Nv Method for the automatic generation of an interactive electronic equipment documentation package
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
AU2003248850A1 (en) 2002-07-12 2004-02-02 President And Fellows Of Harvard College Vapor deposition of tungsten nitride
WO2004008494A2 (en) 2002-07-15 2004-01-22 Aviza Technology, Inc. Servomotor control system and method in a semiconductor manufacturing environment
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
JP4186536B2 (ja) 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP4133062B2 (ja) 2002-07-19 2008-08-13 大日本スクリーン製造株式会社 熱処理装置
WO2004010474A2 (en) 2002-07-19 2004-01-29 Mykrolis Corporation Liquid flow controller and precision dispense apparatus and system
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
JP2005534179A (ja) 2002-07-19 2005-11-10 アヴィザ テクノロジー インコーポレイテッド アミノシランとオゾンを用いる低温誘電体蒸着法
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP3908112B2 (ja) 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
AU2003254266A1 (en) 2002-07-30 2004-02-16 Asm America, Inc. Sublimation system employing carrier gas
JP3725100B2 (ja) 2002-07-31 2005-12-07 アプライド マテリアルズ インコーポレイテッド 成膜方法
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
US6818864B2 (en) 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
US7085623B2 (en) 2002-08-15 2006-08-01 Asm International Nv Method and system for using short ranged wireless enabled computers as a service tool
US6890596B2 (en) 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
US6887521B2 (en) 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6884296B2 (en) 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US7256375B2 (en) 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
USD511280S1 (en) 2002-09-04 2005-11-08 Thermal Dynamics Corporation Plasma arc torch tip
US6884066B2 (en) 2002-09-10 2005-04-26 Fsi International, Inc. Thermal process station with heated lid
US6936086B2 (en) 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
JP2004103990A (ja) 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
US6905940B2 (en) 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
JP3594947B2 (ja) 2002-09-19 2004-12-02 東京エレクトロン株式会社 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US6715949B1 (en) 2002-09-20 2004-04-06 Eastman Kodak Company Medium-handling in printer for donor and receiver mediums
JP3887291B2 (ja) 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
JP4231953B2 (ja) 2002-09-24 2009-03-04 ペガサスネット株式会社 耳孔式ｓａｗ体温計及び該体温計による体温管理システム
JP3877157B2 (ja) 2002-09-24 2007-02-07 東京エレクトロン株式会社 基板処理装置
US6696367B1 (en) 2002-09-27 2004-02-24 Asm America, Inc. System for the improved handling of wafers within a process tool
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US7445690B2 (en) 2002-10-07 2008-11-04 Tokyo Electron Limited Plasma processing apparatus
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
JP3671951B2 (ja) 2002-10-08 2005-07-13 住友電気工業株式会社 測温装置及びそれを用いたセラミックスヒータ
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
US7080545B2 (en) 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
US6821909B2 (en) 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
US6982230B2 (en) 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
JP4009523B2 (ja) 2002-11-14 2007-11-14 岩谷産業株式会社 オゾンガス濃度計測方法及びオゾンガス濃度計測装置
KR101437250B1 (ko) 2002-11-15 2014-10-13 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
JP4502590B2 (ja) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
US6676290B1 (en) 2002-11-15 2004-01-13 Hsueh-Yu Lu Electronic clinical thermometer
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
JP3946130B2 (ja) 2002-11-20 2007-07-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
KR100974141B1 (ko) 2002-11-28 2010-08-04 도쿄엘렉트론가부시키가이샤 기판 처리 장치
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
KR100486690B1 (ko) 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
USD494552S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD496008S1 (en) 2002-12-12 2004-09-14 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
US6929699B2 (en) 2002-12-13 2005-08-16 Texas Instruments Incorporated Gas injectors for a vertical furnace used in semiconductor processing
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
DE10259945A1 (de) 2002-12-20 2004-07-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer
WO2004059699A2 (en) 2002-12-20 2004-07-15 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
CN2588350Y (zh) 2002-12-26 2003-11-26 张连合 一种热电偶
JP2004207564A (ja) 2002-12-26 2004-07-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
DE10261362B8 (de) 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US6692249B1 (en) 2003-01-06 2004-02-17 Texas Instruments Incorporated Hot liner insertion/removal fixture
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
USD497977S1 (en) 2003-01-22 2004-11-02 Tour & Andersson Ab Sealing ring membrane
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
USD558021S1 (en) 2003-01-30 2007-12-25 Roger Lawrence Metal fabrication clamp
US20040152287A1 (en) 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film
JP2004241203A (ja) 2003-02-04 2004-08-26 Hitachi High-Technologies Corp プラズマ処理室壁処理方法
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
JP4402044B2 (ja) 2003-02-06 2010-01-20 東京エレクトロン株式会社 プラズマ処理方法
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
KR100505061B1 (ko) 2003-02-12 2005-08-01 삼성전자주식회사 기판 이송 모듈
US7374696B2 (en) 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
US6917755B2 (en) 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US7077911B2 (en) 2003-03-03 2006-07-18 Seiko Epson Corporation MOCVD apparatus and MOCVD method
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
US7238653B2 (en) 2003-03-10 2007-07-03 Hynix Semiconductor Inc. Cleaning solution for photoresist and method for forming pattern using the same
EP1613792B1 (en) 2003-03-14 2014-01-01 Genus, Inc. Methods and apparatus for atomic layer deposition
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2004288916A (ja) 2003-03-24 2004-10-14 Renesas Technology Corp Ｃｖｄ装置
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
EP1608011A4 (en) 2003-03-26 2010-07-21 Shinetsu Handotai Kk HEAT TREATMENT PURCHASE TOOL HOLDING TOOL AND HEAT TREATMENT DEVICE
US7223014B2 (en) 2003-03-28 2007-05-29 Intempco Controls Ltd. Remotely programmable integrated sensor transmitter
US6972055B2 (en) 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
US7718930B2 (en) 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
SE525113C2 (sv) 2003-04-08 2004-11-30 Tetra Laval Holdings & Finance Metod och anordning för kontinuerlig blandning av två flöden
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US6843830B2 (en) 2003-04-15 2005-01-18 Advanced Technology Materials, Inc. Abatement system targeting a by-pass effluent stream of a semiconductor process tool
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
WO2004095560A1 (ja) 2003-04-18 2004-11-04 Hitachi Kokusai Electric Inc. 半導体製造装置および半導体装置の製造方法
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US6953608B2 (en) 2003-04-23 2005-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
US20040261946A1 (en) 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR200319645Y1 (ko) 2003-04-28 2003-07-12 이규옥 웨이퍼 캐리어 고정 장치
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
US20090204403A1 (en) 2003-05-07 2009-08-13 Omega Engineering, Inc. Speech generating means for use with signal sensors
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
JP4152802B2 (ja) 2003-05-09 2008-09-17 日本エー・エス・エム株式会社 薄膜形成装置
WO2004102648A2 (en) 2003-05-09 2004-11-25 Asm America, Inc. Reactor surface passivation through chemical deactivation
JP3642572B2 (ja) 2003-05-09 2005-04-27 東芝三菱電機産業システム株式会社 オゾン発生装置およびオゾン発生方法
CN1574200A (zh) 2003-05-12 2005-02-02 艾格瑞系统有限公司 质量流控制流量检定和校准的方法
US20050000428A1 (en) 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
USD505590S1 (en) 2003-05-22 2005-05-31 Kraft Foods Holdings, Inc. Susceptor tray
JP4403824B2 (ja) 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
JP5342110B2 (ja) 2003-05-27 2013-11-13 アプライド マテリアルズ インコーポレイテッド 前駆物質を含むソースキャニスタ及びこれを用いて特徴部を充填する方法
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
US7141500B2 (en) 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
WO2005015609A2 (en) 2003-06-13 2005-02-17 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
WO2004112114A1 (ja) 2003-06-16 2004-12-23 Tokyo Electron Limited 成膜方法、半導体装置の製造方法、半導体装置および成膜装置
JP2007523994A (ja) 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US6955072B2 (en) 2003-06-25 2005-10-18 Mks Instruments, Inc. System and method for in-situ flow verification and calibration
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
DE10328660B3 (de) 2003-06-26 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers
US7021330B2 (en) 2003-06-26 2006-04-04 Planar Systems, Inc. Diaphragm valve with reliability enhancements for atomic layer deposition
EP1649076B1 (en) 2003-06-27 2010-05-19 Sundew Technologies, LLC Apparatus and method for chemical source vapor pressure control
US20100129548A1 (en) 2003-06-27 2010-05-27 Sundew Technologies, Llc Ald apparatus and method
US7833580B2 (en) 2003-07-04 2010-11-16 Samsung Electronics Co., Ltd. Method of forming a carbon nano-material layer using a cyclic deposition technique
US20070012402A1 (en) 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
KR100527672B1 (ko) 2003-07-25 2005-11-28 삼성전자주식회사 서셉터 및 이를 포함하는 증착 장치
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
ATE374936T1 (de) 2003-07-25 2007-10-15 Lightwind Corp Verfahren und vorrichtung zur überwachung chemischer prozesse
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
KR20060054387A (ko) 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 증착 전 게르마늄 표면 처리 방법
US7695692B2 (en) 2003-08-06 2010-04-13 Sanderson William D Apparatus and method for producing chlorine dioxide
EP1661161A2 (en) 2003-08-07 2006-05-31 Sundew Technologies, LLC Perimeter partition-valve with protected seals
KR100536604B1 (ko) 2003-08-14 2005-12-14 삼성전자주식회사 고밀도 플라즈마 증착법을 이용한 갭필 방법
US20050037578A1 (en) 2003-08-14 2005-02-17 Wei Wen Chen [method for forming an oxide/ nitride/oxide stacked layer]
US6967305B2 (en) 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
JP3881973B2 (ja) 2003-08-29 2007-02-14 三菱重工業株式会社 窒化シリコン膜の成膜方法
US8152922B2 (en) 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
EP1667217A1 (en) 2003-09-03 2006-06-07 Tokyo Electron Limited Gas treatment device and heat readiting method
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
JP4235066B2 (ja) 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
JP4563729B2 (ja) 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
EP1668298A4 (en) 2003-09-17 2010-04-14 Sionex Corp SEMICONDUCTOR FLOW GENERATOR AND ASSOCIATED SYSTEMS, USES AND METHODS
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
KR100943588B1 (ko) 2003-09-19 2010-02-23 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
JP4356410B2 (ja) 2003-09-22 2009-11-04 株式会社日立製作所 化学物質探知装置及び化学物質探知方法
US20070137794A1 (en) 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
US20050098107A1 (en) 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
JP4558296B2 (ja) * 2003-09-25 2010-10-06 東京エレクトロン株式会社 プラズマアッシング方法
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US20050121145A1 (en) 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US6982046B2 (en) 2003-10-01 2006-01-03 General Electric Company Light sources with nanometer-sized VUV radiation-absorbing phosphors
US7052757B2 (en) 2003-10-03 2006-05-30 Hewlett-Packard Development Company, L.P. Capping layer for enhanced performance media
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
JP2007511902A (ja) 2003-10-29 2007-05-10 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7108753B2 (en) 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050101843A1 (en) 2003-11-06 2005-05-12 Welch Allyn, Inc. Wireless disposable physiological sensor
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
CN1868042A (zh) 2003-11-20 2006-11-22 株式会社日立国际电气 半导体器件的制造方法和衬底处理装置
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
US7055263B2 (en) 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
KR20050053417A (ko) 2003-12-02 2005-06-08 한국전자통신연구원 래디칼 보조 산화 장치
KR20050054122A (ko) 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
US20050120805A1 (en) 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
JP2005172489A (ja) 2003-12-09 2005-06-30 Tokyo Yogyo Co Ltd 溶湯用測温プローブ
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
KR100519798B1 (ko) 2003-12-11 2005-10-10 삼성전자주식회사 향상된 생산성을 갖는 박막 형성 방법
US7301623B1 (en) 2003-12-16 2007-11-27 Nanometrics Incorporated Transferring, buffering and measuring a substrate in a metrology system
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US7569193B2 (en) 2003-12-19 2009-08-04 Applied Materials, Inc. Apparatus and method for controlled combustion of gaseous pollutants
WO2005061759A1 (en) 2003-12-22 2005-07-07 Seco Tools Ab Carrier body and method for coating cutting tools.
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20050148162A1 (en) 2004-01-02 2005-07-07 Huajie Chen Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
KR100620673B1 (ko) 2004-01-05 2006-09-13 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법
KR100593960B1 (ko) 2004-01-09 2006-06-30 병호 최 광원자층 증착장치 및 증착방법
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
JP4722501B2 (ja) 2004-01-29 2011-07-13 三星電子株式会社 半導体素子の多層誘電体構造物、半導体及びその製造方法
JP4833859B2 (ja) 2004-01-30 2011-12-07 東京エレクトロン株式会社 流体用ギャップを有する基板ホルダとこの基板ホルダの製造方法
US7163393B2 (en) 2004-02-02 2007-01-16 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor silicon substrate
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
US20050229849A1 (en) 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
TWI263709B (en) 2004-02-17 2006-10-11 Ind Tech Res Inst Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20100297391A1 (en) 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
KR100817644B1 (ko) 2004-02-27 2008-03-27 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
DE602005018749D1 (ko) 2004-03-02 2010-02-25 Rosemount Inc
US20050233477A1 (en) 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
JP4879159B2 (ja) 2004-03-05 2012-02-22 アプライド マテリアルズ インコーポレイテッド アモルファス炭素膜堆積のためのｃｖｄプロセス
CN100373545C (zh) 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序
JP4246654B2 (ja) 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
WO2005088373A1 (en) 2004-03-08 2005-09-22 Adc Telecommunications, Inc. Fiber access terminal
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7053010B2 (en) 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
US20070087579A1 (en) 2004-03-31 2007-04-19 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7865070B2 (en) 2004-04-21 2011-01-04 Hitachi Kokusai Electric Inc. Heat treating apparatus
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
ATE503866T1 (de) 2004-04-30 2011-04-15 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge- substraten zur iii/v-integration auf si(001)
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US6982208B2 (en) 2004-05-03 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for producing high throughput strained-Si channel MOSFETS
JP2005322668A (ja) 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7202148B2 (en) 2004-05-10 2007-04-10 Taiwan Semiconductor Manufacturing Company Method utilizing compensation features in semiconductor processing
US20050252447A1 (en) 2004-05-11 2005-11-17 Applied Materials, Inc. Gas blocker plate for improved deposition
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
WO2005109486A1 (en) 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
US7748138B2 (en) 2004-05-13 2010-07-06 Tokyo Electron Limited Particle removal method for a substrate transfer mechanism and apparatus
JP5042820B2 (ja) 2004-05-14 2012-10-03 ベクトン・ディキンソン・アンド・カンパニー 生物活性表面を有する物品およびそれらの無溶媒調製法
KR100469132B1 (ko) 2004-05-18 2005-01-29 주식회사 아이피에스 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7396746B2 (en) 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7037794B2 (en) 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
DE602005023792D1 (de) 2004-06-10 2010-11-04 Humanscale Corp Mechanismus zur Positionseinstellung einer befestigten Vorrichtung
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
JP4565897B2 (ja) 2004-06-14 2010-10-20 株式会社Ａｄｅｋａ 薄膜形成用原料及び薄膜の製造方法
US7399570B2 (en) 2004-06-18 2008-07-15 Hynix Semiconductor Inc. Water-soluble negative photoresist polymer and composition containing the same
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
KR101247857B1 (ko) 2004-06-21 2013-03-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
KR20050121426A (ko) 2004-06-22 2005-12-27 삼성에스디아이 주식회사 탄소나노튜브 제조용 촉매의 제조 방법
US20050282350A1 (en) 2004-06-22 2005-12-22 You-Hua Chou Atomic layer deposition for filling a gap between devices
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7244958B2 (en) 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
US7073834B2 (en) 2004-06-25 2006-07-11 Applied Materials, Inc. Multiple section end effector assembly
WO2007001301A2 (en) 2004-06-28 2007-01-04 Cambridge Nanotech Inc. Atomic layer deposition (ald) system and method
KR100614801B1 (ko) 2004-07-05 2006-08-22 삼성전자주식회사 반도체 장치의 막 형성방법
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
WO2006006129A2 (en) 2004-07-09 2006-01-19 Philips Intellectual Property & Standards Gmbh Uvc/vuv dielectric barrier discharge lamp with reflector
US7422653B2 (en) 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
WO2006006377A1 (ja) 2004-07-13 2006-01-19 Hitachi Kokusai Electric Inc. 基板処理装置および半導体装置の製造方法
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
US7409263B2 (en) 2004-07-14 2008-08-05 Applied Materials, Inc. Methods and apparatus for repositioning support for a substrate carrier
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
US7689687B2 (en) 2004-07-30 2010-03-30 Fisher-Rosemount Systems, Inc. Communication controller with automatic time stamping
KR100689401B1 (ko) 2004-07-30 2007-03-08 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
ES2294537T3 (es) 2004-07-30 2008-04-01 Lpe Spa Reactor epitaxial con posicionamiento controlado por susceptor.
JP4417197B2 (ja) 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
US20060021572A1 (en) 2004-07-30 2006-02-02 Colorado School Of Mines High Vacuum Plasma-Assisted Chemical Vapor Deposition System
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US7955646B2 (en) 2004-08-09 2011-06-07 Applied Materials, Inc. Elimination of flow and pressure gradients in low utilization processes
US7504344B2 (en) 2004-08-09 2009-03-17 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
KR101114219B1 (ko) 2004-08-09 2012-03-05 주성엔지니어링(주) 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US20060040054A1 (en) 2004-08-18 2006-02-23 Pearlstein Ronald M Passivating ALD reactor chamber internal surfaces to prevent residue buildup
JP2006059931A (ja) 2004-08-18 2006-03-02 Canon Anelva Corp 急速加熱処理装置
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
WO2006034025A1 (en) 2004-09-16 2006-03-30 Arizona Board Of Regents MATERIALS AND OPTICAL DEVICES BASED ON GROUP IV QUANTUM WELLS GROWN ON Si-Ge-Sn BUFFERED SILICON
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
JP4698190B2 (ja) 2004-09-22 2011-06-08 川惣電機工業株式会社 測温装置
JP4572100B2 (ja) 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
JP2006097044A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
US7806587B2 (en) 2004-09-29 2010-10-05 Citizen Holdings Co., Ltd. Electronic clinical thermometer and method of producing the same
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US7361958B2 (en) 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
US20060099782A1 (en) 2004-10-15 2006-05-11 Massachusetts Institute Of Technology Method for forming an interface between germanium and other materials
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
KR20070056154A (ko) 2004-10-19 2007-05-31 캐논 아네르바 가부시키가이샤 기판 지지·반송용 트레이
JP2006128188A (ja) 2004-10-26 2006-05-18 Nikon Corp 基板搬送装置、基板搬送方法および露光装置
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US7189626B2 (en) 2004-11-03 2007-03-13 Micron Technology, Inc. Electroless plating of metal caps for chalcogenide-based memory devices
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
JP4435666B2 (ja) 2004-11-09 2010-03-24 東京エレクトロン株式会社 プラズマ処理方法、成膜方法
KR100782369B1 (ko) 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
US7428958B2 (en) 2004-11-15 2008-09-30 Nikon Corporation Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
TW201837984A (zh) 2004-11-18 2018-10-16 日商尼康股份有限公司 曝光裝置、曝光方法、及元件製造方法
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US20060107898A1 (en) 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
US20060108221A1 (en) 2004-11-24 2006-05-25 William Goodwin Method and apparatus for improving measuring accuracy in gas monitoring systems
CN100573803C (zh) 2004-11-24 2009-12-23 Oc欧瑞康巴尔斯公司 用于非常大面积基片的真空处理室
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
JP4830290B2 (ja) 2004-11-30 2011-12-07 信越半導体株式会社 直接接合ウェーハの製造方法
JP2006153706A (ja) 2004-11-30 2006-06-15 Taiyo Nippon Sanso Corp 測温体および気相成長装置
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US7368377B2 (en) 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
US7271463B2 (en) 2004-12-10 2007-09-18 Micron Technology, Inc. Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US20060127067A1 (en) 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof
KR100558922B1 (ko) 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
WO2006070602A1 (ja) 2004-12-28 2006-07-06 Bridgestone Corporation 導電性エンドレスベルト、その製造方法およびそれを用いた画像形成装置
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
KR20060076714A (ko) 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
US20090104594A1 (en) 2004-12-29 2009-04-23 Biogen Idec Bioreactor Process Control System and Method
US20060144820A1 (en) 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
WO2006073871A1 (en) 2004-12-30 2006-07-13 Applied Materials, Inc. Line edge roughness reduction compatible with trimming
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
JP2006188729A (ja) 2005-01-05 2006-07-20 Hitachi Kokusai Electric Inc 基板処理装置
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US7169668B2 (en) 2005-01-09 2007-01-30 United Microelectronics Corp. Method of manufacturing a split-gate flash memory device
WO2006078585A2 (en) 2005-01-18 2006-07-27 Asm America, Inc. Wafer support pin assembly
US8211230B2 (en) 2005-01-18 2012-07-03 Asm America, Inc. Reaction system for growing a thin film
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
US7964380B2 (en) 2005-01-21 2011-06-21 Argylia Technologies Nanoparticles for manipulation of biopolymers and methods of thereof
JP2006203120A (ja) 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US20060240187A1 (en) 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US7438949B2 (en) 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
EP1845146B1 (en) 2005-01-31 2015-03-04 Ube Industries, Ltd. Red emitting nitride phosphor and process for producing the same
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
KR100585178B1 (ko) 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
US20060182885A1 (en) 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
JP4734317B2 (ja) 2005-02-17 2011-07-27 株式会社日立国際電気 基板処理方法および基板処理装置
US7779785B2 (en) 2005-02-17 2010-08-24 Hitachi Kokusai Electric Inc. Production method for semiconductor device and substrate processing apparatus
EP1851794A1 (en) 2005-02-22 2007-11-07 ASM America, Inc. Plasma pre-treating surfaces for atomic layer deposition
US20060185589A1 (en) 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7410340B2 (en) 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
KR100667598B1 (ko) 2005-02-25 2007-01-12 주식회사 아이피에스 반도체 처리 장치
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR100854995B1 (ko) 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US8211235B2 (en) 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
JP4258518B2 (ja) 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4214124B2 (ja) 2005-03-14 2009-01-28 株式会社バイオエコーネット 耳式体温計
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US20060211259A1 (en) 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US8974868B2 (en) 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
KR100669828B1 (ko) 2005-03-22 2007-01-16 성균관대학교산학협력단 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법
KR100655431B1 (ko) 2005-03-23 2006-12-11 삼성전자주식회사 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
JP2006278058A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd プラズマ処理装置
US20060213437A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Plasma enhanced atomic layer deposition system
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US7282415B2 (en) 2005-03-29 2007-10-16 Freescale Semiconductor, Inc. Method for making a semiconductor device with strain enhancement
USD559993S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
USD559994S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
US20060228898A1 (en) 2005-03-30 2006-10-12 Cory Wajda Method and system for forming a high-k dielectric layer
US8298336B2 (en) 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
WO2006110750A2 (en) 2005-04-07 2006-10-19 Aviza Technology, Inc. Multilayer, multicomponent high-k films and methods for depositing the same
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
EP1877592A2 (en) 2005-04-21 2008-01-16 Honeywell International Inc. Novel ruthenium-based materials and ruthenium alloys, their use in vapor deposition or atomic layer deposition and films produced therefrom
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
WO2006114781A2 (en) 2005-04-26 2006-11-02 University College Cork - National University Of Ireland, Cork Deposition of materials
US7544398B1 (en) 2005-04-26 2009-06-09 The Regents Of The Univesity Of California Controlled nano-doping of ultra thin films
US7351057B2 (en) 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7425350B2 (en) 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7169018B2 (en) 2005-05-04 2007-01-30 Micrel, Incorporated Wafer carrier checker and method of using same
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7915173B2 (en) 2005-05-05 2011-03-29 Macronix International Co., Ltd. Shallow trench isolation structure having reduced dislocation density
US7214630B1 (en) 2005-05-06 2007-05-08 Novellus Systems, Inc. PMOS transistor with compressive dielectric capping layer
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
JP4666473B2 (ja) 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
JP2006319261A (ja) 2005-05-16 2006-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
US7101763B1 (en) 2005-05-17 2006-09-05 International Business Machines Corporation Low capacitance junction-isolation for bulk FinFET technology
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US8138104B2 (en) 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US20060269690A1 (en) 2005-05-27 2006-11-30 Asm Japan K.K. Formation technology for nanoparticle films having low dielectric constant
US20090029564A1 (en) 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
US20060275933A1 (en) 2005-06-02 2006-12-07 Applied Materials, Inc. Thermally conductive ceramic tipped contact thermocouple
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20060281310A1 (en) 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
WO2007027165A1 (en) 2005-06-09 2007-03-08 Axcelis Technologies, Inc. Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
JP4813480B2 (ja) 2005-06-13 2011-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
US7473655B2 (en) 2005-06-17 2009-01-06 Applied Materials, Inc. Method for silicon based dielectric chemical vapor deposition
JP4728708B2 (ja) 2005-06-17 2011-07-20 日本電気株式会社 配線基板及びその製造方法
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
US20060286819A1 (en) 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7601652B2 (en) 2005-06-21 2009-10-13 Applied Materials, Inc. Method for treating substrates and films with photoexcitation
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20090194233A1 (en) 2005-06-23 2009-08-06 Tokyo Electron Limited Component for semicondutor processing apparatus and manufacturing method thereof
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US20060292310A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
WO2007008561A2 (en) 2005-07-07 2007-01-18 Mks Instruments, Inc. Ozone system for multi-chamber tools
KR20080028963A (ko) 2005-07-08 2008-04-02 에비자 테크놀로지, 인크. 실리콘 함유 필름의 증착 방법
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
WO2007007995A1 (en) 2005-07-09 2007-01-18 Bang-Kwon Kang Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
US7925378B2 (en) 2005-07-11 2011-04-12 Brooks Automation, Inc. Process apparatus with on-the-fly workpiece centering
US7579285B2 (en) 2005-07-11 2009-08-25 Imec Atomic layer deposition method for depositing a layer
TW200702647A (en) 2005-07-13 2007-01-16 Actherm Inc Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same
US7271044B2 (en) 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
KR100961016B1 (ko) 2005-07-26 2010-06-01 가와사키 플랜트 시스템즈 가부시키 가이샤 혼합유체의 균일화장치 및 혼합유체 공급설비
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
USD593585S1 (en) 2005-07-29 2009-06-02 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
USD571831S1 (en) 2005-07-29 2008-06-24 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
TWI327339B (en) 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
TWI261313B (en) 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
USD571383S1 (en) 2005-07-29 2008-06-17 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
WO2007015436A1 (ja) 2005-08-04 2007-02-08 Tosoh Corporation 金属含有化合物、その製造方法、金属含有薄膜及びその形成方法
WO2007018157A1 (ja) 2005-08-05 2007-02-15 Tokyo Electron Limited 基板処理装置およびそれに用いる基板載置台
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
JP4666215B2 (ja) 2005-08-10 2011-04-06 株式会社ダイフク 物品搬送装置
US7229873B2 (en) 2005-08-10 2007-06-12 Texas Instruments Incorporated Process for manufacturing dual work function metal gates in a microelectronics device
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
WO2007024094A1 (en) 2005-08-24 2007-03-01 Electronics And Telecommunications Research Institute Method of manufacturing vanadium oxide thin film
US8123968B2 (en) 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
USD556704S1 (en) 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
KR20080050612A (ko) 2005-09-08 2008-06-09 어플라이드 머티어리얼스, 인코포레이티드 대면적 전자부품을 위한 패턴화된 무전해 금속화 처리
US8052794B2 (en) 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US20070056843A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
JP5017950B2 (ja) 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7578616B2 (en) 2005-09-22 2009-08-25 Lam Research Corporation Apparatus for determining a temperature of a substrate and methods therefor
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
WO2007041164A2 (en) 2005-09-30 2007-04-12 Bognar John A Measuring nitrogen oxides and other gases by ozone formation
US8372203B2 (en) 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US7976641B1 (en) 2005-09-30 2011-07-12 Lam Research Corporation Extending storage time of removed plasma chamber components prior to cleaning thereof
USD541125S1 (en) 2005-10-05 2007-04-24 Powers Products Iii, Llc Fastener slide
US7754906B2 (en) 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
KR101153118B1 (ko) 2005-10-12 2012-06-07 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
KR100725108B1 (ko) 2005-10-18 2007-06-04 삼성전자주식회사 가스 공급 장치 및 이를 갖는 기판 가공 장치
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
US7727828B2 (en) 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US8377628B2 (en) 2005-10-20 2013-02-19 Agfa Graphics Nv Negative working, heat-sensitive, lithographic printing plate precursor
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7399712B1 (en) 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
US20070095283A1 (en) 2005-10-31 2007-05-03 Galewski Carl J Pumping System for Atomic Layer Deposition
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
JP5044931B2 (ja) 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
WO2007053626A2 (en) 2005-10-31 2007-05-10 Applied Materials, Inc. Process abatement reactor
KR101019293B1 (ko) 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US7695808B2 (en) 2005-11-07 2010-04-13 3M Innovative Properties Company Thermal transfer coating
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US7561982B2 (en) 2005-11-10 2009-07-14 Shake Awake Products, LLC Physical attribute recording method and system
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
US7589028B1 (en) 2005-11-15 2009-09-15 Novellus Systems, Inc. Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
US7897217B2 (en) 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US8815014B2 (en) 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070116872A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
WO2007058120A1 (ja) 2005-11-18 2007-05-24 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
WO2007076195A2 (en) 2005-11-22 2007-07-05 Genus, Inc. Small volume symmetric flow single wafer ald apparatus
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US8603580B2 (en) 2005-11-28 2013-12-10 Msp Corporation High stability and high capacity precursor vapor generation for thin film deposition
JP5082229B2 (ja) 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US7963917B2 (en) 2005-12-05 2011-06-21 Echo Therapeutics, Inc. System and method for continuous non-invasive glucose monitoring
US7857506B2 (en) 2005-12-05 2010-12-28 Sencal Llc Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications
JP4931082B2 (ja) 2005-12-06 2012-05-16 株式会社アルバック ガスヘッド及び薄膜製造装置
US8003919B2 (en) 2005-12-06 2011-08-23 Dainippon Screen Mfg. Co., Ltd. Substrate heat treatment apparatus
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US8454749B2 (en) 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
US7713584B2 (en) 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWM292692U (en) 2005-12-29 2006-06-21 Powerchip Semiconductor Corp Thermocouple apparatus
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP5324026B2 (ja) 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
JP5068458B2 (ja) 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
WO2007083662A1 (ja) * 2006-01-18 2007-07-26 Kyoto University 異極像結晶を用いたｘ線発生装置
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
WO2007084493A2 (en) * 2006-01-19 2007-07-26 Asm America, Inc. High temperature ald inlet manifold
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
US7736437B2 (en) 2006-02-03 2010-06-15 Integrated Materials, Incorporated Baffled liner cover
US20070184179A1 (en) 2006-02-09 2007-08-09 Akshay Waghray Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
JP2007211326A (ja) 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
KR101186740B1 (ko) 2006-02-17 2012-09-28 삼성전자주식회사 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
KR20070084683A (ko) 2006-02-21 2007-08-27 국민대학교산학협력단 분자층 증착법
US7354849B2 (en) 2006-02-28 2008-04-08 Intel Corporation Catalytically enhanced atomic layer deposition process
WO2007105431A1 (ja) 2006-03-07 2007-09-20 Hitachi Kokusai Electric Inc. 基板処理装置および基板処理方法
WO2007102319A1 (ja) 2006-03-07 2007-09-13 Ckd Corporation ガス流量検定ユニット
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7670432B2 (en) 2006-03-08 2010-03-02 Tokyo Electron Limited Exhaust system for a vacuum processing system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
US7910494B2 (en) 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US8012442B2 (en) 2006-03-31 2011-09-06 Tokyo Electron Limited Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
US7645484B2 (en) 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
US7753584B2 (en) 2006-03-31 2010-07-13 Mesoscribe Technologies, Inc. Thermocouples
US8097300B2 (en) 2006-03-31 2012-01-17 Tokyo Electron Limited Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US7276447B1 (en) 2006-04-11 2007-10-02 Applied Materials, Inc. Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material
JP4764241B2 (ja) 2006-04-17 2011-08-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8399349B2 (en) 2006-04-18 2013-03-19 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US8187415B2 (en) 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
JP4345774B2 (ja) 2006-04-26 2009-10-14 ソニー株式会社 半導体装置の製造方法
US20070251456A1 (en) 2006-04-27 2007-11-01 Applied Materials, Inc., A Delaware Corporation Composite heater and chill plate
US20070259778A1 (en) 2006-04-28 2007-11-08 Syracuse University Flameless heating system
US20070252233A1 (en) 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7547633B2 (en) 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7997795B2 (en) 2006-05-02 2011-08-16 Watlow Electric Manufacturing Company Temperature sensors and methods of manufacture thereof
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070261868A1 (en) 2006-05-12 2007-11-15 Gross James R Magnetic torque-limiting device and method
US20070266945A1 (en) 2006-05-16 2007-11-22 Asm Japan K.K. Plasma cvd apparatus equipped with plasma blocking insulation plate
JP2007311558A (ja) 2006-05-18 2007-11-29 Toshiba Corp 気相成長装置および気相成長基板の製造方法
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
SG158126A1 (en) 2006-05-26 2010-01-29 Ineos Mfg Belgium Nv Slurry phase polymerisation process
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
JP2007324350A (ja) 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US20070281105A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US7623940B2 (en) 2006-06-02 2009-11-24 The Boeing Company Direct-manufactured duct interconnects
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US20070281082A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080018004A1 (en) 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
JP5543203B2 (ja) 2006-06-16 2014-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
JP5045000B2 (ja) 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US7625820B1 (en) 2006-06-21 2009-12-01 Novellus Systems, Inc. Method of selective coverage of high aspect ratio structures with a conformal film
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US7833351B2 (en) 2006-06-26 2010-11-16 Applied Materials, Inc. Batch processing platform for ALD and CVD
US7494272B2 (en) 2006-06-27 2009-02-24 Applied Materials, Inc. Dynamic surface annealing using addressable laser array with pyrometry feedback
US7718045B2 (en) 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US20080003425A1 (en) 2006-06-29 2008-01-03 Spencer James T Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings
JP4847231B2 (ja) 2006-06-29 2011-12-28 ルネサスエレクトロニクス株式会社 電界に起因する剥離物による汚染を防止する装置
US7501355B2 (en) 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP5027573B2 (ja) 2006-07-06 2012-09-19 株式会社小松製作所 温度センサおよび温調装置
US7597523B2 (en) 2006-07-10 2009-10-06 Asyst Technologies, Inc. Variable lot size load port
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100782484B1 (ko) 2006-07-13 2007-12-05 삼성전자주식회사 열처리 설비
JP4098338B2 (ja) 2006-07-20 2008-06-11 川崎重工業株式会社 ウェハ移載装置および基板移載装置
US7981815B2 (en) 2006-07-20 2011-07-19 Hitachi Kokusai Electric Inc. Semiconductor device producing method and substrate processing apparatus
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
WO2008011579A2 (en) 2006-07-21 2008-01-24 Aixtron, Inc. Small volume symmetric flow single wafer ald apparatus
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
JP2008041734A (ja) 2006-08-02 2008-02-21 Sony Corp 半導体装置および半導体装置の製造方法
JP2008039513A (ja) 2006-08-03 2008-02-21 Hitachi Metals Ltd 質量流量制御装置の流量制御補正方法
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
US7632354B2 (en) 2006-08-08 2009-12-15 Tokyo Electron Limited Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US7935942B2 (en) 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
KR100825787B1 (ko) 2006-08-18 2008-04-29 삼성전자주식회사 전하트랩층을 포함하는 반도체 메모리소자
KR101466998B1 (ko) 2006-08-23 2014-12-01 가부시키가이샤 호리바 에스텍 집적형 가스 패널 장치
JP4961895B2 (ja) 2006-08-25 2012-06-27 東京エレクトロン株式会社 ウェハ搬送装置、ウェハ搬送方法及び記憶媒体
JP4904995B2 (ja) 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
US20080260963A1 (en) 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
KR100752190B1 (ko) 2006-09-04 2007-08-27 동부일렉트로닉스 주식회사 반도체 소자의 갭필 방법
JP5138253B2 (ja) 2006-09-05 2013-02-06 東京エレクトロン株式会社 アニール装置
ATE474215T1 (de) 2006-09-06 2010-07-15 Kistler Holding Ag Temperatursensor mit bearbeitbarer front
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
KR100761857B1 (ko) 2006-09-08 2007-09-28 삼성전자주식회사 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법
JP2008066159A (ja) 2006-09-08 2008-03-21 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
TWI275658B (en) 2006-09-13 2007-03-11 Ind Tech Res Inst Method of improving surface frame resistance of a substrate
JP2008072030A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7740437B2 (en) 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
ATE533207T1 (de) 2006-09-25 2011-11-15 Light Sources Inc Schnappschlossverbinder
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
USD634329S1 (en) 2006-09-26 2011-03-15 Margareta Wastrom Computer platform with forearm support
US8137048B2 (en) 2006-09-27 2012-03-20 Vserv Technologies Wafer processing system with dual wafer robots capable of asynchronous motion
JP2008085129A (ja) 2006-09-28 2008-04-10 Taiheiyo Cement Corp 基板載置装置
TWI462179B (zh) 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
DE102006046374B4 (de) 2006-09-29 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
JP2008089320A (ja) 2006-09-29 2008-04-17 Nicom Co Ltd 流量計測装置
TW200822253A (en) 2006-10-02 2008-05-16 Matsushita Electric Ind Co Ltd Component crimping apparatus control method, component crimping apparatus, and measuring tool
JP2008091761A (ja) 2006-10-04 2008-04-17 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
WO2008042981A2 (en) 2006-10-05 2008-04-10 Asm America, Inc. Ald of metal silicate films
JP5073751B2 (ja) 2006-10-10 2012-11-14 エーエスエム アメリカ インコーポレイテッド 前駆体送出システム
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
US20100001409A1 (en) 2006-11-09 2010-01-07 Nxp, B.V. Semiconductor device and method of manufacturing thereof
TWI412080B (zh) 2006-11-09 2013-10-11 Ulvac Inc The method of forming a barrier film
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US20080179104A1 (en) 2006-11-14 2008-07-31 Smith International, Inc. Nano-reinforced wc-co for improved properties
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
WO2008064080A1 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US20080118334A1 (en) 2006-11-22 2008-05-22 Bonora Anthony C Variable pitch storage shelves
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
US7853364B2 (en) 2006-11-30 2010-12-14 Veeco Instruments, Inc. Adaptive controller for ion source
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080178805A1 (en) 2006-12-05 2008-07-31 Applied Materials, Inc. Mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
US7521340B2 (en) 2006-12-07 2009-04-21 Innovalight, Inc. Methods for creating a densified group IV semiconductor nanoparticle thin film
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US20080202689A1 (en) 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US20080173238A1 (en) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
CN101558497B (zh) 2006-12-15 2011-09-07 Nxp股份有限公司 晶体管器件和制造这一晶体管器件的方法
USD583395S1 (en) 2006-12-15 2008-12-23 Tokyo Electron Limited Cover for a heater stage of a plasma processing apparatus
JP5662022B2 (ja) 2006-12-19 2015-01-28 コーニンクレッカ フィリップス エヌ ヴェ 製造ラインでオブジェクトを加熱するシステム及び方法
US8178436B2 (en) 2006-12-21 2012-05-15 Intel Corporation Adhesion and electromigration performance at an interface between a dielectric and metal
KR20080058620A (ko) 2006-12-22 2008-06-26 세메스 주식회사 복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비
JP2008166360A (ja) 2006-12-27 2008-07-17 Hitachi Ltd 半導体集積回路装置
US8120114B2 (en) 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
JP4553891B2 (ja) 2006-12-27 2010-09-29 シャープ株式会社 半導体層製造方法
GB2445188B (en) 2006-12-29 2009-07-01 Thermo Fisher Scientific Inc Apparatus and method for generating nitrogen oxides
JP2008172083A (ja) 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
JP5108489B2 (ja) 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
US7725012B2 (en) 2007-01-19 2010-05-25 Asm America, Inc. Movable radiant heat sources
WO2008089168A2 (en) 2007-01-19 2008-07-24 Applied Materials, Inc. Plasma immersion chamber
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US20080191193A1 (en) 2007-01-22 2008-08-14 Xuegeng Li In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US7993457B1 (en) 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US20080182403A1 (en) 2007-01-26 2008-07-31 Atif Noori Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild
US7598170B2 (en) 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US20080179715A1 (en) 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
JP4270284B2 (ja) 2007-01-30 2009-05-27 トヨタ自動車株式会社 車輪状態監視システムおよび車輪状態検出装置
US7967996B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
JP4896899B2 (ja) 2007-01-31 2012-03-14 東京エレクトロン株式会社 基板処理装置およびパーティクル付着防止方法
JP2008198629A (ja) 2007-02-08 2008-08-28 Mitsubishi Electric Corp 表面処理方法および太陽電池セル
US8043432B2 (en) 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US7851360B2 (en) 2007-02-14 2010-12-14 Intel Corporation Organometallic precursors for seed/barrier processes and methods thereof
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
USD576001S1 (en) 2007-02-16 2008-09-02 Brenda Brunderman Faux brick tool
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
KR101483318B1 (ko) 2007-02-21 2015-01-16 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 기판상에 루테늄계 막을 형성하는 방법
US7871198B2 (en) 2007-02-26 2011-01-18 Battelle Energy Alliance, Llc High-temperature thermocouples and related methods
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
JP5371785B2 (ja) 2007-03-01 2013-12-18 アプライド マテリアルズ インコーポレイテッド Ｒｆシャッター
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US8012259B2 (en) 2007-03-09 2011-09-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US20080223130A1 (en) 2007-03-13 2008-09-18 Provina Incorporated Method and device for measuring density of a liquid
US7621672B2 (en) 2007-03-19 2009-11-24 Babcock & Wilcox Technical Services Y-12, Llc Thermocouple shield
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US8298379B2 (en) 2007-03-22 2012-10-30 Tokyo Electron Limited Method and apparatus for extending chamber component life in a substrate processing system
WO2008120459A1 (ja) 2007-03-22 2008-10-09 Panasonic Corporation プラズマ処理装置及びプラズマ処理方法
US7763869B2 (en) 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
JP5034594B2 (ja) 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7588749B2 (en) 2007-03-29 2009-09-15 Minimus Spine, Inc. Apparatus, method and system for delivering oxygen-ozone
US20080241387A1 (en) 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
CN101647101B (zh) 2007-03-29 2012-06-20 东京毅力科创株式会社 等离子加工设备
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
ITMI20070671A1 (it) 2007-04-02 2008-10-03 St Microelectronics Srl Architettura circuitale su base organica e relativo metodo fi realizzazione
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US7592212B2 (en) 2007-04-06 2009-09-22 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate
US8362220B2 (en) 2007-04-13 2013-01-29 The Board Of Trustees Of The University Of Illinois Metal complex compositions and methods for making metal-containing films
US8740205B2 (en) 2007-04-16 2014-06-03 Ulvac, Inc. Conveyor and deposition apparatus, and maintenance method thereof
WO2008129977A1 (ja) 2007-04-17 2008-10-30 Ulvac, Inc. 成膜装置
US7807579B2 (en) 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
US20080257102A1 (en) 2007-04-20 2008-10-23 William Packer Mechanically retained motorcycle handlebar grips
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
JP4853374B2 (ja) 2007-04-27 2012-01-11 東京エレクトロン株式会社 塗布、現像装置及びその方法並びに記憶媒体
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
KR100894098B1 (ko) 2007-05-03 2009-04-20 주식회사 하이닉스반도체 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법
US20110067522A1 (en) 2007-05-08 2011-03-24 Lai Ching-Chuan Bicycle handlebar grip
US8110099B2 (en) 2007-05-09 2012-02-07 Contech Stormwater Solutions Inc. Stormwater filter assembly
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7750429B2 (en) 2007-05-15 2010-07-06 International Business Machines Corporation Self-aligned and extended inter-well isolation structure
GB0709723D0 (en) 2007-05-22 2007-06-27 Goodrich Control Sys Ltd Temperature sensing
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
CN101678974A (zh) 2007-05-31 2010-03-24 应用材料股份有限公司 延伸scara机械手臂连接的方法及设备
US20090017631A1 (en) 2007-06-01 2009-01-15 Bencher Christopher D Self-aligned pillar patterning using multiple spacer masks
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US8084352B2 (en) 2007-06-04 2011-12-27 Panasonic Corporation Method of manufacturing semiconductor device
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US7955650B2 (en) 2007-06-07 2011-06-07 Asm Japan K.K. Method for forming dielectric film using porogen gas
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20080305014A1 (en) 2007-06-07 2008-12-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus
JP4589984B2 (ja) 2007-06-08 2010-12-01 東京エレクトロン株式会社 微細パターンの形成方法
KR101217778B1 (ko) 2007-06-08 2013-01-02 도쿄엘렉트론가부시키가이샤 패터닝 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US20080303744A1 (en) 2007-06-11 2008-12-11 Tokyo Electron Limited Plasma processing system, antenna, and use of plasma processing system
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US20080314319A1 (en) 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
USD575713S1 (en) 2007-06-21 2008-08-26 Ratcliffe Peter W Vehicle accessory
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20080314892A1 (en) 2007-06-25 2008-12-25 Graham Robert G Radiant shield
US20090004875A1 (en) 2007-06-27 2009-01-01 Meihua Shen Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate
US8905124B2 (en) 2007-06-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature controlled loadlock chamber
WO2009006272A1 (en) 2007-06-28 2009-01-08 Advanced Technology Materials, Inc. Precursors for silicon dioxide gap fill
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
JP2009016672A (ja) 2007-07-06 2009-01-22 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
US7651269B2 (en) 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
USD596476S1 (en) 2007-07-27 2009-07-21 Daniel P. Welch Handle bar grip
US8980756B2 (en) 2007-07-30 2015-03-17 Micron Technology, Inc. Methods for device fabrication using pitch reduction
US7910497B2 (en) 2007-07-30 2011-03-22 Applied Materials, Inc. Method of forming dielectric layers on a substrate and apparatus therefor
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
JP5024382B2 (ja) 2007-08-03 2012-09-12 信越半導体株式会社 サセプタ及びシリコンエピタキシャルウェーハの製造方法
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
JP2009044023A (ja) 2007-08-10 2009-02-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
TWI405295B (zh) 2007-08-13 2013-08-11 Advanced Display Proc Eng Co 基板處理裝置及方法
GB0715854D0 (en) 2007-08-15 2007-09-26 Enigma Diagnostics Ltd Apparatus and method for calibration of non-contact thermal sensors
KR20090018290A (ko) 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US8084372B2 (en) 2007-08-24 2011-12-27 Tokyo Electron Limited Substrate processing method and computer storage medium
US20090052498A1 (en) 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
WO2009028619A1 (ja) 2007-08-30 2009-03-05 Tokyo Electron Limited 処理ガス供給システム及び処理装置
JP2009076881A (ja) 2007-08-30 2009-04-09 Tokyo Electron Ltd 処理ガス供給システム及び処理装置
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
JP2009060035A (ja) 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd 静電チャック部材、その製造方法及び静電チャック装置
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
JP5663305B2 (ja) 2007-09-07 2015-02-04 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 大気圧グロー放電プラズマを用いる原子層堆積の方法及び装置
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20090075491A1 (en) 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
CN101889331A (zh) 2007-09-18 2010-11-17 乔治洛德方法研究和开发液化空气有限公司 形成含硅膜的方法
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
JP2009076661A (ja) 2007-09-20 2009-04-09 Elpida Memory Inc 半導体装置の製造方法
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US8070880B2 (en) 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
JP4730369B2 (ja) 2007-10-30 2011-07-20 株式会社デンソー ナビゲーションシステム
EP2910624B1 (en) 2007-10-31 2016-11-23 China Petroleum & Chemical Corporation Passivation process for a continuous reforming apparatus during the initial reaction
KR101369907B1 (ko) 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
US7737039B2 (en) 2007-11-01 2010-06-15 Micron Technology, Inc. Spacer process for on pitch contacts and related structures
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
US20090124131A1 (en) 2007-11-09 2009-05-14 Electronic Controls Design Thermocouple adapter
US20090122458A1 (en) 2007-11-14 2009-05-14 Varian Semiconductor Epuipment Associated, Inc. Embossed electrostatic chuck
WO2009063755A1 (ja) 2007-11-14 2009-05-22 Tokyo Electron Limited プラズマ処理装置および半導体基板のプラズマ処理方法
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
KR101412144B1 (ko) 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
US8282735B2 (en) 2007-11-27 2012-10-09 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
EP2065927B1 (en) 2007-11-27 2013-10-02 Imec Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer
WO2009069015A1 (en) 2007-11-28 2009-06-04 Philips Intellectual Property & Standards Gmbh Dielectric barrier discharge lamp
KR20090055443A (ko) 2007-11-28 2009-06-02 주식회사 케이씨텍 원자층 증착 장치
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
KR20100102106A (ko) 2007-12-06 2010-09-20 신에쯔 한도타이 가부시키가이샤 기상성장용 서셉터 및 기상성장 장치
US7807566B2 (en) 2007-12-07 2010-10-05 Asm Japan K.K. Method for forming dielectric SiOCH film having chemical stability
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US8047706B2 (en) 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
US8003174B2 (en) * 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
CN101896992B (zh) 2007-12-17 2013-01-30 株式会社Orc制作所 放电灯
US20090155488A1 (en) 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US20090159002A1 (en) 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US7998875B2 (en) 2007-12-19 2011-08-16 Lam Research Corporation Vapor phase repair and pore sealing of low-K dielectric materials
US7993057B2 (en) 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
JP3140111U (ja) 2007-12-21 2008-03-13 日本エー・エス・エム株式会社 半導体製造装置用ガス供給装置
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
US8501637B2 (en) 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD
KR101573954B1 (ko) 2007-12-21 2015-12-02 램 리써치 코포레이션 포토레지스트 더블 패터닝
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US20090197015A1 (en) 2007-12-25 2009-08-06 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
JP5291928B2 (ja) 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
KR101444873B1 (ko) 2007-12-26 2014-09-26 주성엔지니어링(주) 기판처리장치
US8333839B2 (en) 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
SG195592A1 (en) 2007-12-27 2013-12-30 Lam Res Corp Arrangements and methods for determining positions and offsets in plasma processing system
US20090165721A1 (en) 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
US8496377B2 (en) 2007-12-31 2013-07-30 Covidien Lp Thermometer having molded probe component
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US8129288B2 (en) 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
CN101919041B (zh) 2008-01-16 2013-03-27 索绍股份有限公司 衬底固持器，衬底支撑设备，衬底处理设备以及使用所述衬底处理设备的衬底处理方法
US20090186571A1 (en) 2008-01-22 2009-07-23 Asm America, Inc. Air ventilation system
JP2011514660A (ja) 2008-01-31 2011-05-06 アプライド マテリアルズ インコーポレイテッド 閉ループｍｏｃｖｄにおける堆積制御
WO2009095898A1 (en) 2008-02-01 2009-08-06 L'air Liquide-Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude New metal precursors containing beta-diketiminato ligands
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100988390B1 (ko) 2008-02-11 2010-10-18 성균관대학교산학협력단 기판처리장치 및 기판처리방법
US20090200494A1 (en) 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
KR101362811B1 (ko) 2008-02-11 2014-02-14 (주)소슬 배치식 기판 지지 장치 및 이를 구비하는 기판 처리 장치
KR101043211B1 (ko) 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US7795045B2 (en) 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
US20090206056A1 (en) 2008-02-14 2009-08-20 Songlin Xu Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers
JP2009194248A (ja) 2008-02-15 2009-08-27 Tokyo Electron Ltd パターン形成方法、半導体製造装置及び記憶媒体
JP5233734B2 (ja) 2008-02-20 2013-07-10 東京エレクトロン株式会社 ガス供給装置、成膜装置及び成膜方法
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
US9263298B2 (en) 2008-02-27 2016-02-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
US8273178B2 (en) 2008-02-28 2012-09-25 Asm Genitech Korea Ltd. Thin film deposition apparatus and method of maintaining the same
US20090302002A1 (en) 2008-02-29 2009-12-10 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US7858533B2 (en) 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
JP5507097B2 (ja) 2008-03-12 2014-05-28 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
GB2458507A (en) 2008-03-20 2009-09-23 Tecvac Ltd Oxidation of non ferrous metal components
US7695619B2 (en) 2008-03-21 2010-04-13 Pentair Filtration, Inc. Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit
GB0805328D0 (en) 2008-03-25 2008-04-30 Aviza Technologies Ltd Deposition of an amorphous layer
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
USD590933S1 (en) 2008-03-31 2009-04-21 Mcp Industries, Inc. Vent cap device
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
JP2009252851A (ja) 2008-04-02 2009-10-29 Nikon Corp 露光装置及びデバイス製造方法
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
KR20100124797A (ko) 2008-04-04 2010-11-29 다이셀 가가꾸 고교 가부시끼가이샤 포토레지스트용 폴리올 화합물
JP5007827B2 (ja) 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
US8193388B2 (en) 2008-04-15 2012-06-05 American Air Liquide, Inc. Compounds for depositing tellurium-containing films
US20090315093A1 (en) 2008-04-16 2009-12-24 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
CN102007597B (zh) 2008-04-17 2014-02-19 应用材料公司 低温薄膜晶体管工艺、装置特性和装置稳定性改进
JP5214316B2 (ja) * 2008-04-22 2013-06-19 大陽日酸株式会社 プラズマ成膜装置のクリーニング方法
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
WO2009131902A2 (en) 2008-04-23 2009-10-29 Intermolecular, Inc. Yttrium and titanium high-k dielectric films
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
KR101563138B1 (ko) 2008-04-25 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
JP5253875B2 (ja) 2008-04-28 2013-07-31 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
CN102017015B (zh) 2008-04-28 2013-01-16 巴斯夫欧洲公司 可由双聚合获得的低k电介质
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
US20090280248A1 (en) 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
KR20150017389A (ko) 2008-05-14 2015-02-16 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 전력 전달을 위한 시간 분해된 조정 방식을 이용하는 펄스화된 플라즈마 처리를 위한 방법 및 장치
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
US7514058B1 (en) 2008-05-22 2009-04-07 The Lata Group, Inc. Apparatus for on-site production of nitrate ions
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
EP2128299B1 (en) 2008-05-29 2016-12-28 General Electric Technology GmbH Multilayer thermal barrier coating
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
WO2009146744A1 (de) 2008-06-05 2009-12-10 Osram Gesellschaft mit beschränkter Haftung Verfahren zur behandlung von oberflächen, strahler für dieses verfahren sowie bestrahlungssystem mit diesem strahler
US8283201B2 (en) 2008-06-05 2012-10-09 American Air Liquide, Inc. Preparation of lanthanide-containing precursors and deposition of lanthanide-containing films
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
US7915667B2 (en) 2008-06-11 2011-03-29 Qimonda Ag Integrated circuits having a contact region and methods for manufacturing the same
JP5421551B2 (ja) 2008-06-11 2014-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20090308315A1 (en) 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
KR20110031466A (ko) 2008-06-20 2011-03-28 어플라이드 머티어리얼스, 인코포레이티드 가스 분배 샤워헤드 스커트
US8827695B2 (en) 2008-06-23 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer's ambiance control
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
US20090325391A1 (en) 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
KR101036605B1 (ko) 2008-06-30 2011-05-24 세메스 주식회사 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
JP2010021204A (ja) 2008-07-08 2010-01-28 Toshiba Corp 半導体装置及びその製造方法
US8800484B2 (en) 2008-07-09 2014-08-12 Tokyo Electron Limited Plasma processing apparatus
US20100012036A1 (en) 2008-07-11 2010-01-21 Hugo Silva Isolation for multi-single-wafer processing apparatus
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
USD614593S1 (en) 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
USD609652S1 (en) 2008-07-22 2010-02-09 Tokyo Electron Limited Wafer attracting plate
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
US8047711B2 (en) 2008-08-06 2011-11-01 Heinz Ploechinger Thermocouple vacuum gauge
US20100034719A1 (en) 2008-08-06 2010-02-11 Christian Dussarrat Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition
US8328585B2 (en) 2008-08-07 2012-12-11 Texas Instruments Incorporated Modulated deposition process for stress control in thick TiN films
USD600223S1 (en) 2008-08-07 2009-09-15 Ravinder Aggarwal Susceptor ring
US20110220874A1 (en) 2008-08-08 2011-09-15 Tobias Hanrath Inorganic Bulk Multijunction Materials and Processes for Preparing the Same
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5188326B2 (ja) 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100055318A1 (en) 2008-08-29 2010-03-04 Veeco Instruments Inc. Wafer carrier with varying thermal resistance
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
TW201011861A (en) 2008-09-04 2010-03-16 Nanya Technology Corp Method for fabricating integrated circuit
JP5276388B2 (ja) 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
CN102150251B (zh) 2008-09-08 2013-06-19 芝浦机械电子株式会社 基板处理装置及基板处理方法
JP5226438B2 (ja) 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
US8731706B2 (en) 2008-09-12 2014-05-20 Hitachi High-Technologies Corporation Vacuum processing apparatus
JP5511273B2 (ja) 2008-09-12 2014-06-04 株式会社日立国際電気 基板処理装置及び基板処理方法
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
JP2010073822A (ja) 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
US20100075037A1 (en) 2008-09-22 2010-03-25 Marsh Eugene P Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
JP2010077508A (ja) 2008-09-26 2010-04-08 Tokyo Electron Ltd 成膜装置及び基板処理装置
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US9493875B2 (en) 2008-09-30 2016-11-15 Eugene Technology Co., Ltd. Shower head unit and chemical vapor deposition apparatus
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
US20100090149A1 (en) 2008-10-01 2010-04-15 Compressor Engineering Corp. Poppet valve assembly, system, and apparatus for use in high speed compressor applications
JP2012504873A (ja) 2008-10-03 2012-02-23 ビーコ プロセス イクイップメント， インコーポレイテッド 気相エピタキシーシステム
USD609655S1 (en) 2008-10-03 2010-02-09 Ngk Insulators, Ltd. Electrostatic chuck
CN103346116B (zh) 2008-10-07 2016-01-13 应用材料公司 用于从蚀刻基板有效地移除卤素残余物的设备
KR101491726B1 (ko) 2008-10-08 2015-02-17 주성엔지니어링(주) 반도체 소자의 갭필 방법
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
KR101357181B1 (ko) 2008-10-14 2014-01-29 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 화학적 기상 증착(ｐｅｃｖｄ)에 의해 등각성 비정질 탄소막을 증착하기 위한 방법
KR20100041529A (ko) 2008-10-14 2010-04-22 삼성전자주식회사 초임계 유체를 이용한 물질막 증착장치, 이를 포함하는 물질막 증착 시스템 및 물질막 형성방법
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
WO2010044978A1 (en) 2008-10-15 2010-04-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid group iv/iii-v semiconductor structures
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US8114734B2 (en) 2008-10-21 2012-02-14 United Microelectronics Corp. Metal capacitor and method of making the same
US8697189B2 (en) 2008-10-21 2014-04-15 Intevac, Inc. Method and apparatus for precision surface modification in nano-imprint lithography
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
US8185443B2 (en) 2008-10-27 2012-05-22 Ebay, Inc. Method and apparatus for authorizing a payment via a remote device
WO2010062582A2 (en) 2008-10-27 2010-06-03 Applied Materials, Inc. Vapor deposition method for ternary compounds
KR101714660B1 (ko) 2008-11-07 2017-03-22 에이에스엠 아메리카, 인코포레이티드 반응 챔버
JP5410074B2 (ja) 2008-11-07 2014-02-05 東京エレクトロン株式会社 オゾンガス濃度測定方法、オゾンガス濃度測定システム及び基板処理装置
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US8524616B2 (en) 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
JP5225041B2 (ja) 2008-11-21 2013-07-03 京セラ株式会社 静電チャック
KR101004434B1 (ko) 2008-11-26 2010-12-28 세메스 주식회사 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법
US8714169B2 (en) 2008-11-26 2014-05-06 Semes Co. Ltd. Spin head, apparatus for treating substrate, and method for treating substrate
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
US9714465B2 (en) 2008-12-01 2017-07-25 Applied Materials, Inc. Gas distribution blocker apparatus
EP2194574B1 (en) 2008-12-02 2018-11-07 IMEC vzw Method for producing interconnect structures for integrated circuits
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
JP5356005B2 (ja) 2008-12-10 2013-12-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US7902009B2 (en) 2008-12-11 2011-03-08 Intel Corporation Graded high germanium compound films for strained semiconductor devices
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
KR20110084318A (ko) 2008-12-15 2011-07-21 도쿄엘렉트론가부시키가이샤 기판 처리 시스템, 기판 처리 방법 및 프로그램을 기억한 기억 매체
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US7871587B2 (en) 2008-12-23 2011-01-18 Mks Instruments, Inc. Reactive chemical containment system
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8816424B2 (en) 2008-12-26 2014-08-26 SK Hynix Inc. Nonvolatile memory device
JP2010157536A (ja) 2008-12-26 2010-07-15 Nuflare Technology Inc サセプタの製造方法
TWI465599B (zh) 2008-12-29 2014-12-21 K C Tech Co Ltd 原子層沉積裝置
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
KR101111063B1 (ko) 2008-12-31 2012-02-16 엘아이지에이디피 주식회사 기판합착장치
US7964490B2 (en) 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
CN102341901B (zh) 2009-01-11 2013-11-06 应用材料公司 用于移动基板的系统、设备与方法
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
USD606952S1 (en) 2009-01-16 2009-12-29 Asm Genitech Korea Ltd. Plasma inducing plate for semiconductor deposition apparatus
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
US8405005B2 (en) 2009-02-04 2013-03-26 Mattson Technology, Inc. Electrostatic chuck system and process for radially tuning the temperature profile across the surface of a substrate
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
US20120003500A1 (en) 2009-02-16 2012-01-05 Mitsubishi Plastics, Inc. Process for producing multilayered gas-barrier film
US8692466B2 (en) 2009-02-27 2014-04-08 Mks Instruments Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
JP5216632B2 (ja) 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
US8586484B2 (en) 2009-03-04 2013-11-19 Fuji Electric Co., Ltd. Film forming method and film forming apparatus
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
USD616394S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
USD616390S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Quartz cover for manufacturing semiconductor wafers
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP2010239115A (ja) 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP5337542B2 (ja) 2009-03-12 2013-11-06 株式会社堀場エステック マスフローメータ、マスフローコントローラ、それらを含むマスフローメータシステムおよびマスフローコントローラシステム
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
KR101583608B1 (ko) 2009-03-24 2016-01-08 삼성전자 주식회사 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법
TW201118977A (en) 2009-03-26 2011-06-01 Panasonic Corp Plasma processing apparatus and plasma processing method
WO2010110263A1 (ja) 2009-03-27 2010-09-30 東京エレクトロン株式会社 金属窒化膜の成膜方法および記憶媒体
US9004744B1 (en) 2009-03-30 2015-04-14 Techni-Blend, Inc. Fluid mixer using countercurrent injection
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
US8118484B2 (en) 2009-03-31 2012-02-21 Rosemount Inc. Thermocouple temperature sensor with connection detection circuitry
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
US8197915B2 (en) * 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
JP5647792B2 (ja) 2009-04-01 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． キャパシタ用容量絶縁膜の製造方法
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
JP5710591B2 (ja) 2009-04-20 2015-04-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
US20100266765A1 (en) 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
CN102414794B (zh) 2009-04-21 2015-01-28 应用材料公司 改良膜厚度不均匀性与粒子表现的cvd设备
JP5204031B2 (ja) 2009-04-22 2013-06-05 Ｊｆｅ鋼板株式会社 嵌合式折板屋根材
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
KR101178166B1 (ko) 2009-04-28 2012-08-30 캐논 아네르바 가부시키가이샤 반도체 장치 및 그 제조 방법
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
KR20100032812A (ko) 2009-05-11 2010-03-26 주식회사 테스 화학기상증착 장치와 이를 이용한 기판 처리 시스템
US8962876B2 (en) 2009-05-15 2015-02-24 Wayne State University Thermally stable volatile film precursors
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
JP5356516B2 (ja) 2009-05-20 2013-12-04 株式会社東芝 凹凸パターン形成方法
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
KR101064210B1 (ko) 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
CN102449851A (zh) 2009-06-05 2012-05-09 安德鲁有限责任公司 电缆端未准备好的同轴连接器
JP5456036B2 (ja) 2009-06-12 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US8926502B2 (en) 2011-03-07 2015-01-06 Endochoice, Inc. Multi camera endoscope having a side service channel
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5285519B2 (ja) 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
WO2011007323A1 (en) 2009-07-14 2011-01-20 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition of group iv metal-containing films at high temperature
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
MY158201A (en) 2009-07-17 2016-09-15 Mitsui Chemicals Inc Multilayered material and method of producing the same
US8507389B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Methods for forming dielectric layers
JP5223804B2 (ja) 2009-07-22 2013-06-26 東京エレクトロン株式会社 成膜方法及び成膜装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
JP5618505B2 (ja) 2009-07-30 2014-11-05 テクノクオーツ株式会社 石英ガラス部材の再生方法
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
TW201128734A (en) 2009-08-05 2011-08-16 Applied Materials Inc CVD apparatus
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
US8258588B2 (en) 2009-08-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing layer of a field effect transistor
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8563085B2 (en) 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
WO2011021539A1 (ja) 2009-08-20 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置とプラズマ処理方法
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
US9117773B2 (en) 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
US9117769B2 (en) 2009-08-27 2015-08-25 Tokyo Electron Limited Plasma etching method
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
KR20120090996A (ko) 2009-08-27 2012-08-17 어플라이드 머티어리얼스, 인코포레이티드 인-시튜 챔버 세정 후 프로세스 챔버의 제염 방법
US20110183079A1 (en) 2009-08-31 2011-07-28 Penn State Research Foundation Plasma enhanced atomic layer deposition process
JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
US9012333B2 (en) 2009-09-09 2015-04-21 Spansion Llc Varied silicon richness silicon nitride formation
US9076634B2 (en) 2009-09-10 2015-07-07 Lam Research Corporation Replaceable upper chamber parts of plasma processing apparatus
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011082493A (ja) 2009-09-14 2011-04-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
CN102239544A (zh) 2009-09-17 2011-11-09 东京毅力科创株式会社 等离子体处理装置以及等离子体处理装置用气体供给机构
US8419959B2 (en) 2009-09-18 2013-04-16 Lam Research Corporation Clamped monolithic showerhead electrode
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
JPWO2011040385A1 (ja) 2009-09-29 2013-02-28 東京エレクトロン株式会社 Ｎｉ膜の成膜方法
JP5467007B2 (ja) 2009-09-30 2014-04-09 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
TW201131651A (en) 2009-10-05 2011-09-16 Univ Tohoku Low dielectric constant insulating film
US8544317B2 (en) 2009-10-09 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus with simultaneously movable stages
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US9315896B2 (en) 2009-10-26 2016-04-19 Asm Ip Holding B.V. Synthesis and use of precursors for ALD of group VA element containing thin films
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
US9359991B2 (en) 2009-10-29 2016-06-07 Oceana Energy Company Energy conversion systems and methods
JP5434484B2 (ja) 2009-11-02 2014-03-05 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
JP4948587B2 (ja) 2009-11-13 2012-06-06 東京エレクトロン株式会社 フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
WO2011058069A2 (en) 2009-11-13 2011-05-19 Basf Se Method for purifying a chlorine supply
US8329585B2 (en) 2009-11-17 2012-12-11 Lam Research Corporation Method for reducing line width roughness with plasma pre-etch treatment on photoresist
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
JP5753351B2 (ja) 2009-11-19 2015-07-22 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 電子デバイスを形成する方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
KR101128267B1 (ko) 2009-11-26 2012-03-26 주식회사 테스 가스분사장치 및 이를 갖는 공정 챔버
JP5432686B2 (ja) 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
KR101377238B1 (ko) 2009-12-11 2014-03-20 가부시키가이샤 사무코 Ｃｖｄ용 트레이 및 그것을 이용한 성막 방법
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
KR20110078326A (ko) 2009-12-31 2011-07-07 삼성전자주식회사 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
JP2011166106A (ja) 2010-01-13 2011-08-25 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP2011144412A (ja) 2010-01-13 2011-07-28 Honda Motor Co Ltd プラズマ成膜装置
JP5549441B2 (ja) 2010-01-14 2014-07-16 東京エレクトロン株式会社 保持体機構、ロードロック装置、処理装置及び搬送機構
USD651291S1 (en) 2010-01-24 2011-12-27 Glv International (1995) Ltd. Duct connector ring
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US20110180233A1 (en) 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
JP5107372B2 (ja) 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
US20120315113A1 (en) 2010-02-05 2012-12-13 Tokyo Electron Limited Substrate holder, substrate transfer apparatus, and substrate processing apparatus
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
KR101603176B1 (ko) 2010-02-12 2016-03-14 어플라이드 머티어리얼스, 인코포레이티드 프로세스 챔버 가스 유동 개선들
US8562272B2 (en) 2010-02-16 2013-10-22 Lam Research Corporation Substrate load and unload mechanisms for high throughput
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
KR101814096B1 (ko) 2010-02-23 2018-01-02 아사히 유키자이 가부시키가이샤 인라인형 유체 혼합 장치
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
USD625977S1 (en) 2010-02-25 2010-10-26 Vertex Stone and Chinaware Ltd. Spacer tool
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP2011181681A (ja) 2010-03-01 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 原子層堆積方法及び原子層堆積装置
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
KR101810532B1 (ko) 2010-03-12 2017-12-19 어플라이드 머티어리얼스, 인코포레이티드 다중 인젝트를 이용하는 원자 층 증착 챔버
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US20110236201A1 (en) 2010-03-23 2011-09-29 Sumedhkumar Vyankatesh Shende Method and apparatus for radial exhaust gas turbine
US8039388B1 (en) 2010-03-24 2011-10-18 Taiwam Semiconductor Manufacturing Company, Ltd. Main spacer trim-back method for replacement gate process
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US20110232677A1 (en) 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
KR101565432B1 (ko) 2010-03-31 2015-11-03 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치용 유전체창, 플라즈마 처리 장치 및 플라즈마 처리 장치용 유전체창의 장착 방법
EP2553141A4 (en) 2010-04-01 2013-08-21 Air Liquide DEPOSITION OF FILMS CONTAINING METAL NITRIDES USING A COMBINATION OF AMINOUS AND HALOGENATED METAL PRECURSORS
JP4733214B1 (ja) 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
KR101211043B1 (ko) 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법
KR101366002B1 (ko) 2010-04-09 2014-02-21 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
EP2378543B1 (en) 2010-04-14 2015-05-20 ASM Genitech Korea Ltd. Method of forming semiconductor patterns
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8993460B2 (en) 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
US8852685B2 (en) 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
TWI536451B (zh) 2010-04-26 2016-06-01 應用材料股份有限公司 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備
KR101121858B1 (ko) 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
CH702999A1 (de) 2010-04-29 2011-10-31 Amt Ag Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen.
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
CN102859034B (zh) 2010-04-30 2015-04-29 应用材料公司 垂直直列cvd系统
US8496756B2 (en) 2010-04-30 2013-07-30 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
US8241992B2 (en) 2010-05-10 2012-08-14 International Business Machines Corporation Method for air gap interconnect integration using photo-patternable low k material
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
US9067168B2 (en) 2010-05-28 2015-06-30 Exxonmobil Upstream Research Company Integrated adsorber head and valve design and swing adsorption methods related thereto
US8513129B2 (en) 2010-05-28 2013-08-20 Applied Materials, Inc. Planarizing etch hardmask to increase pattern density and aspect ratio
JP5593384B2 (ja) 2010-06-01 2014-09-24 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
US8362731B2 (en) 2010-06-02 2013-01-29 Boulder Wind Power, Inc. Air gap control systems and methods
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US8637390B2 (en) 2010-06-04 2014-01-28 Applied Materials, Inc. Metal gate structures and methods for forming thereof
MX2012014091A (es) 2010-06-09 2013-01-29 Procter & Gamble Produccion de alimentacion semicontinua de composiciones liquidas para el cuidado personal.
TWI509695B (zh) 2010-06-10 2015-11-21 Asm Int 使膜選擇性沈積於基板上的方法
JP5525339B2 (ja) 2010-06-10 2014-06-18 ナブテスコ株式会社 ロボットアーム
JP2012004401A (ja) 2010-06-18 2012-01-05 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2013537705A (ja) 2010-07-02 2013-10-03 マシスン トライ−ガス インコーポレイテッド シクロヘキサシランを利用した薄膜およびこの製造方法
KR20120003677A (ko) 2010-07-05 2012-01-11 삼성전자주식회사 반도체 장치 및 그의 형성 방법
WO2012005957A2 (en) 2010-07-07 2012-01-12 Advanced Technology Materials, Inc. Doping of zro2 for dram applications
JP5405667B2 (ja) 2010-07-22 2014-02-05 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US8721791B2 (en) 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP5707766B2 (ja) 2010-07-28 2015-04-30 住友電気工業株式会社 サセプタおよび半導体製造装置
JP5490753B2 (ja) 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
JP2012038819A (ja) 2010-08-04 2012-02-23 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
US20130084408A1 (en) 2010-08-06 2013-04-04 Mitsubishi Heavy Industries, Ltd. Vacuum processing apparatus and plasma processing method
KR101331288B1 (ko) 2010-08-06 2013-11-20 도쿄엘렉트론가부시키가이샤 기판 처리 시스템, 반송 모듈, 기판 처리 방법 및 반도체 소자의 제조 방법
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
CN103338807B (zh) 2010-08-10 2016-06-29 加利福尼亚大学董事会 自动的流体输送系统及方法
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
KR101249999B1 (ko) 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
KR101658492B1 (ko) 2010-08-13 2016-09-21 삼성전자주식회사 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
USD649986S1 (en) 2010-08-17 2011-12-06 Ebara Corporation Sealing ring
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
CN102383106B (zh) 2010-09-03 2013-12-25 甘志银 快速清除残余反应气体的金属有机物化学气相沉积反应腔体
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US20120058630A1 (en) 2010-09-08 2012-03-08 Veeco Instruments Inc. Linear Cluster Deposition System
JP2012080095A (ja) 2010-09-10 2012-04-19 Elpida Memory Inc 半導体装置及びその製造方法
JP5560147B2 (ja) 2010-09-13 2014-07-23 東京エレクトロン株式会社 成膜方法及び半導体装置の製造方法
US8969210B2 (en) 2010-09-15 2015-03-03 Tokyo Electron Limited Plasma etching apparatus, plasma etching method, and semiconductor device manufacturing method
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
US8722548B2 (en) 2010-09-24 2014-05-13 International Business Machines Corporation Structures and techniques for atomic layer deposition
US20120073400A1 (en) 2010-09-29 2012-03-29 John Wang Handlebar grip assembly
US7994070B1 (en) 2010-09-30 2011-08-09 Tokyo Electron Limited Low-temperature dielectric film formation by chemical vapor deposition
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
US8076250B1 (en) 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
FR2965888B1 (fr) 2010-10-08 2012-12-28 Alcatel Lucent Canalisation d'evacuation de gaz et procede d'evacuation associe
JP5638405B2 (ja) 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
JP5636867B2 (ja) 2010-10-19 2014-12-10 富士通株式会社 半導体装置及び半導体装置の製造方法
JP5905476B2 (ja) 2010-10-19 2016-04-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US11675269B2 (en) 2010-10-21 2023-06-13 Nissan Chemical Industries, Ltd. Composition for forming resist overlayer film for EUV lithography
USD654882S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
USD655261S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
USD654884S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Top plate for reactor for manufacturing semiconductor
USD655260S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
CN103180932A (zh) 2010-10-27 2013-06-26 应用材料公司 用于控制光刻胶线宽粗糙度的方法及设备
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
JP4755307B1 (ja) 2010-10-28 2011-08-24 株式会社朝日工業社 クリーンルーム
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
KR20120047325A (ko) 2010-11-01 2012-05-11 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
WO2012061593A2 (en) 2010-11-03 2012-05-10 Applied Materials, Inc. Apparatus and methods for deposition of silicon carbide and silicon carbonitride films
KR101716113B1 (ko) 2010-11-03 2017-03-15 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
CN103201408A (zh) 2010-11-05 2013-07-10 思诺斯技术公司 具有多个等离子体室的游离基反应器
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
JP5722595B2 (ja) 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
US20140144500A1 (en) 2010-11-22 2014-05-29 E I Du Pont De Nemours And Company Semiconductor inks films, coated substrates and methods of preparation
KR20120055363A (ko) 2010-11-23 2012-05-31 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자
WO2012073938A1 (ja) 2010-11-29 2012-06-07 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
US8288758B2 (en) 2010-12-02 2012-10-16 International Business Machines Corporation SOI SiGe-base lateral bipolar junction transistor
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
CN103249858B (zh) 2010-12-09 2015-06-10 株式会社爱发科 有机薄膜形成装置
WO2012087493A2 (en) 2010-12-20 2012-06-28 Applied Materials, Inc. In-situ low-k capping to improve integration damage resistance
CN106887399B (zh) 2010-12-20 2020-02-21 Ev 集团 E·索尔纳有限责任公司 用于保持晶片的容纳装置
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
USD655599S1 (en) 2010-12-29 2012-03-13 Bill Durham Wall or door mountable holder
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
CN103270578B (zh) 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
US8698107B2 (en) 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
KR101306315B1 (ko) 2011-01-11 2013-09-09 주식회사 디엠에스 화학기상증착 장치
JP5236755B2 (ja) 2011-01-14 2013-07-17 東京エレクトロン株式会社 成膜装置及び成膜方法
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8398773B2 (en) 2011-01-21 2013-03-19 Asm International N.V. Thermal processing furnace and liner for the same
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
WO2012102892A2 (en) 2011-01-26 2012-08-02 Applied Materials, Inc. Plasma treatment of silicon nitride and silicon oxynitride
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
JP2012164736A (ja) 2011-02-04 2012-08-30 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
CN202259160U (zh) 2011-02-21 2012-05-30 盛陶盟(香港)有限公司 陶瓷玻璃合成电极及其荧光灯
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
JP2012195562A (ja) 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
US9017457B2 (en) 2011-03-01 2015-04-28 Exxonmobil Upstream Research Company Apparatus and systems having a reciprocating valve head assembly and swing adsorption processes related thereto
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
US8735299B2 (en) 2011-03-03 2014-05-27 Tokyo Electron Limited Semiconductor device manufacturing method and computer-readable storage medium
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8501605B2 (en) 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
ITMI20110401A1 (it) 2011-03-14 2012-09-15 Petroceramics S P A Metodo per l'infiltrazione di un materiale poroso con un secondo materiale e relativo impianto
JP2012195513A (ja) 2011-03-17 2012-10-11 Tokyo Electron Ltd プラズマ処理装置
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
WO2012134605A1 (en) 2011-03-25 2012-10-04 Applied Materials, Inc. Method and apparatus for thermocouple installation or replacement in a substrate support
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
KR101303422B1 (ko) 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
JP5922219B2 (ja) 2011-03-31 2016-05-24 アイメックＩｍｅｃ 単結晶スズ含有半導体材料を成長させる方法
KR101200720B1 (ko) 2011-03-31 2012-11-13 최대규 핫 배플판이 구비된 플라즈마 반응기 및 이를 이용한 기판 처리 방법
KR102111702B1 (ko) 2011-04-07 2020-05-15 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
CN103493193A (zh) 2011-04-15 2014-01-01 龙云株式会社 晶圆更换装置及晶圆支承用柄
TW201243030A (en) 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
JP5955062B2 (ja) 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
DE102011081749B4 (de) 2011-04-29 2016-04-14 Von Ardenne Gmbh Substratbehandlungsanlage
US9165804B2 (en) 2011-04-29 2015-10-20 Applied Materials, Inc. Methods of cooling process chamber components
US8927066B2 (en) 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
US9218962B2 (en) 2011-05-19 2015-12-22 Globalfoundries Inc. Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
JP2012244180A (ja) 2011-05-24 2012-12-10 Macronix Internatl Co Ltd 多層接続構造及びその製造方法
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP5630379B2 (ja) 2011-05-26 2014-11-26 東京エレクトロン株式会社 温度測定装置、温度測定方法、記憶媒体及び熱処理装置
JP5730670B2 (ja) 2011-05-27 2015-06-10 株式会社Adeka 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
JP2013012719A (ja) 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US9136180B2 (en) 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
TWI541938B (zh) 2011-06-03 2016-07-11 諾菲勒斯系統公司 用於互連的含金屬及矽覆蓋層
US8692319B2 (en) 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
TW201308021A (zh) 2011-06-15 2013-02-16 Applied Materials Inc 調控增強的電子自旋以控制光阻線寬粗糙度之方法與設備
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US20120318457A1 (en) 2011-06-17 2012-12-20 Son Nguyen Materials and coatings for a showerhead in a processing system
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
US8450212B2 (en) 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
DE112012002699B4 (de) 2011-06-28 2018-12-13 Federal-Mogul Ignition Company Zündkerze und Verfahren zum Herstellen einer Elektrode einer Zündkerze
WO2013005726A1 (ja) 2011-07-01 2013-01-10 太陽化学工業株式会社 プライマー組成物、該組成物から成るプライマー層を含む構造体、及び該構造体の製造方法
WO2013005481A1 (ja) 2011-07-05 2013-01-10 エピクルー株式会社 サセプタ装置及びこれを備えた成膜装置
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
US20140234550A1 (en) 2011-07-06 2014-08-21 Wayne State University Atomic layer deposition of transition metal thin films
US20130011984A1 (en) 2011-07-07 2013-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
JP6132242B2 (ja) 2011-07-12 2017-05-24 パナソニックＩｐマネジメント株式会社 窒化物半導体装置およびその製造方法
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US9630127B2 (en) 2011-07-19 2017-04-25 Hayward Industries, Inc. Filter vessel assembly and related methods of use
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
JP5789149B2 (ja) 2011-07-21 2015-10-07 Ｊｓｗアフティ株式会社 原子層成長方法及び原子層成長装置
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
US20130019960A1 (en) 2011-07-22 2013-01-24 Applied Materials, Inc. Reactant Delivery System For ALD/CVD Processes
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
US20130025538A1 (en) 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
US20130025786A1 (en) 2011-07-28 2013-01-31 Vladislav Davidkovich Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
US20130032085A1 (en) 2011-08-04 2013-02-07 Applied Materials, Inc. Plasma assisted hvpe chamber design
US9184100B2 (en) 2011-08-10 2015-11-10 United Microelectronics Corp. Semiconductor device having strained fin structure and method of making the same
CN102931083B (zh) 2011-08-10 2015-07-29 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US20130040481A1 (en) 2011-08-12 2013-02-14 Genesis Technology Usa, Inc. U-Channel Coaxial F-Connector
TWI450999B (zh) 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
TWI492298B (zh) 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
KR101326518B1 (ko) 2011-09-02 2013-11-07 엘지이노텍 주식회사 조명 장치
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US8476743B2 (en) 2011-09-09 2013-07-02 International Business Machines Corporation C-rich carbon boron nitride dielectric films for use in electronic devices
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
JP2013062361A (ja) 2011-09-13 2013-04-04 Tokyo Electron Ltd 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP1438745S (ko) 2011-09-20 2015-04-06
JP1438319S (ko) 2011-09-20 2015-04-06
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
KR102084901B1 (ko) 2011-09-23 2020-03-05 노벨러스 시스템즈, 인코포레이티드 플라즈마 활성화된 컨포멀 유전체 막 증착
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
KR101913891B1 (ko) 2011-09-27 2018-10-31 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 반도체 장치의 제조 방법
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
USD709536S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709537S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
JP6042656B2 (ja) 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
NL2009555A (en) 2011-10-03 2013-04-08 Asml Netherlands Bv Method to provide a patterned orientation template for a self-assemblable polymer.
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
TWI666975B (zh) 2011-10-05 2019-07-21 美商應用材料股份有限公司 對稱電漿處理腔室
TW201331408A (zh) 2011-10-07 2013-08-01 Tokyo Electron Ltd 電漿處理裝置
SG11201401430RA (en) 2011-10-10 2014-09-26 Brewer Science Inc Spin-on carbon compositions for lithographic processing
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US9281231B2 (en) 2011-10-12 2016-03-08 Ferrotec (Usa) Corporation Non-contact magnetic drive assembly with mechanical stop elements
TWI541928B (zh) 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
USD695240S1 (en) 2011-10-20 2013-12-10 Tokyo Electron Limited Arm for wafer transportation for manufacturing semiconductor
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
TWI606136B (zh) 2011-11-04 2017-11-21 Ａｓｍ國際股份有限公司 沉積摻雜氧化矽的方法以及用於沉積摻雜氧化矽至基板上的原子層沉積製程
US20130113085A1 (en) 2011-11-04 2013-05-09 Applied Materials, Inc. Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium
US8927428B2 (en) 2011-11-04 2015-01-06 E I Du Pont De Nemours And Company Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
WO2013069739A1 (ja) 2011-11-11 2013-05-16 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、およびプラズマ処理装置
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US20130119018A1 (en) 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
JP5921168B2 (ja) 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
JP5694129B2 (ja) 2011-11-29 2015-04-01 株式会社東芝 半導体装置及びその製造方法
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
WO2013082537A1 (en) 2011-12-01 2013-06-06 Quarkstar Llc Solid-state lighting device and method of manufacturing same
AU340165S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
AU340167S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
JP6046052B2 (ja) 2011-12-12 2016-12-14 東京エレクトロン株式会社 プラズマ発生用アンテナ、プラズマ処理装置及びプラズマ処理方法
US8979559B2 (en) 2011-12-14 2015-03-17 Cooper Technologies Company Lockout tagout plug sleeve
US9691839B2 (en) 2011-12-14 2017-06-27 Intel Corporation Metal-insulator-metal (MIM) capacitor with insulator stack having a plurality of metal oxide layers
US20130157409A1 (en) 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
KR101891458B1 (ko) 2011-12-20 2018-08-24 인텔 코포레이션 Iii-v 반도체 재료 층을 갖는 반도체 디바이스
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
CN112563315A (zh) 2011-12-23 2021-03-26 索尼公司 半导体器件和集成电路结构
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
US20130161629A1 (en) 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
KR20130076979A (ko) 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자 및 이의 제조방법
CN102505114A (zh) 2012-01-03 2012-06-20 西安电子科技大学 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法
TW201330086A (zh) 2012-01-05 2013-07-16 Duan-Ren Yu 蝕刻裝置
US8659066B2 (en) 2012-01-06 2014-02-25 International Business Machines Corporation Integrated circuit with a thin body field effect transistor and capacitor
USD676943S1 (en) 2012-01-11 2013-02-26 Bill Kluss Pipe end cap
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
US20130189635A1 (en) 2012-01-25 2013-07-25 First Solar, Inc. Method and apparatus providing separate modules for processing a substrate
JP2013151720A (ja) 2012-01-25 2013-08-08 Ulvac Japan Ltd 真空成膜装置
US9190320B2 (en) 2012-01-26 2015-11-17 Applied Materials, Inc. Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
US9466524B2 (en) 2012-01-31 2016-10-11 Applied Materials, Inc. Method of depositing metals using high frequency plasma
US9177826B2 (en) 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
USD698904S1 (en) 2012-02-08 2014-02-04 Asm Ip Holding B.V. Vacuum flange ring
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
KR101928356B1 (ko) 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9291063B2 (en) 2012-02-29 2016-03-22 Siemens Energy, Inc. Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine
US9162209B2 (en) 2012-03-01 2015-10-20 Novellus Systems, Inc. Sequential cascading of reaction volumes as a chemical reuse strategy
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR102029286B1 (ko) 2012-03-09 2019-10-07 버슘머트리얼즈 유에스, 엘엘씨 디스플레이 디바이스를 위한 배리어 물질
CN104284997B (zh) 2012-03-09 2016-08-17 气体产品与化学公司 在薄膜晶体管器件上制备含硅膜的方法
US8902428B2 (en) 2012-03-15 2014-12-02 Applied Materials, Inc. Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
JPWO2013137115A1 (ja) 2012-03-15 2015-08-03 東京エレクトロン株式会社 成膜方法及び成膜装置
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9057388B2 (en) 2012-03-21 2015-06-16 International Business Machines Corporation Vacuum trap
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
US9982340B2 (en) 2012-04-04 2018-05-29 Taiwan Semiconductor Manufacturing Co. Ltd. Shower head apparatus and method for controlling plasma or gas distribution
GB201206096D0 (en) 2012-04-05 2012-05-16 Dyson Technology Ltd Atomic layer deposition
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US20130269612A1 (en) 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
SG10201608512QA (en) 2012-04-19 2016-12-29 Intevac Inc Dual-mask arrangement for solar cell fabrication
US10679883B2 (en) 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
US20130280891A1 (en) 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
US8741723B2 (en) 2012-04-25 2014-06-03 Globalfoundries Inc. Methods of forming self-aligned contacts for a semiconductor device
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
JP6231078B2 (ja) 2012-04-26 2017-11-15 インテヴァック インコーポレイテッド 真空プロセスのためのシステム構成
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US20130302520A1 (en) 2012-05-11 2013-11-14 Kai-An Wang Co-evaporation system comprising vapor pre-mixer
US8853826B2 (en) 2012-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for bipolar junction transistors and resistors
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
US8846543B2 (en) 2012-05-24 2014-09-30 Jinhong Tong Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
WO2013176144A1 (ja) 2012-05-25 2013-11-28 東京エレクトロン株式会社 プラズマ処理装置、及びプラズマ処理方法
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US20130320429A1 (en) 2012-05-31 2013-12-05 Asm Ip Holding B.V. Processes and structures for dopant profile control in epitaxial trench fill
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US8900886B2 (en) 2012-06-01 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of monitoring and controlling atomic layer deposition of tungsten
JP5920242B2 (ja) 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
DE112013002823T5 (de) 2012-06-07 2015-03-19 Soitec Gaseinspritzkomponenten für Abscheidungssysteme, Abscheidungssysteme mit derartigen Komponenten und dazugehörige Verfahren
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
USD723330S1 (en) 2012-06-11 2015-03-03 Barry Dean York Debris mask and basin
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US8728938B2 (en) 2012-06-13 2014-05-20 Ostendo Technologies, Inc. Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
KR20150023016A (ko) 2012-06-15 2015-03-04 피코순 오와이 원자층 퇴적에 의한 기판 웹 코팅
US20130337653A1 (en) 2012-06-15 2013-12-19 Asm Ip Holding B.V. Semiconductor processing apparatus with compact free radical source
JP6233306B2 (ja) 2012-06-22 2017-11-22 日本電気株式会社 スイッチング素子およびスイッチング素子の製造方法
US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US10233541B2 (en) 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
US10535735B2 (en) 2012-06-29 2020-01-14 Intel Corporation Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
USD705762S1 (en) 2012-07-04 2014-05-27 Sercomm Corporation Communication device having multi-module assembly
US9145612B2 (en) 2012-07-06 2015-09-29 Applied Materials, Inc. Deposition of N-metal films comprising aluminum alloys
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US9630284B2 (en) 2012-07-12 2017-04-25 Lincoln Global, Inc. Configurable welding table and force indicating clamp
US20150167162A1 (en) 2012-07-13 2015-06-18 Gallium Enterprises Pty Ltd Apparatus and method for film formation
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US9593133B2 (en) 2012-07-20 2017-03-14 America Air Liquide, Inc. Organosilane precursors for ALD/CVD silicon-containing film applications
US20140023794A1 (en) 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition
US9911676B2 (en) 2012-07-27 2018-03-06 Asm Ip Holding B.V. System and method for gas-phase passivation of a semiconductor surface
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
CN103578906B (zh) 2012-07-31 2016-04-27 细美事有限公司 用于处理基板的装置
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
ES2859574T3 (es) 2012-08-07 2021-10-04 Massachusetts Inst Technology Anticuerpos de antivirus del dengue y usos de los mismos
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
EP2896718A4 (en) 2012-08-17 2016-04-06 Ihi Corp METHOD FOR PRODUCING A HEAT-RESISTANT COMPOSITE MATERIAL AND MANUFACTURING DEVICE
US9707530B2 (en) 2012-08-21 2017-07-18 Uop Llc Methane conversion apparatus and process using a supersonic flow reactor
US9370757B2 (en) 2012-08-21 2016-06-21 Uop Llc Pyrolytic reactor
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
USD693200S1 (en) 2012-08-28 2013-11-12 Lee Valley Tools, Ltd. Bench stop
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
JP2014049529A (ja) 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
US8859368B2 (en) 2012-09-04 2014-10-14 Globalfoundries Inc. Semiconductor device incorporating a multi-function layer into gate stacks
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US8651788B1 (en) 2012-09-06 2014-02-18 Horst Budde Variable-length, adjustable spacer
KR102132427B1 (ko) 2012-09-07 2020-07-09 어플라이드 머티어리얼스, 인코포레이티드 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP5882167B2 (ja) 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
US11149370B2 (en) 2012-09-19 2021-10-19 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6123208B2 (ja) * 2012-09-28 2017-05-10 東京エレクトロン株式会社 成膜装置
JP6042160B2 (ja) 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
US9064948B2 (en) 2012-10-22 2015-06-23 Globalfoundries Inc. Methods of forming a semiconductor device with low-k spacers and the resulting device
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
WO2014070600A1 (en) 2012-10-29 2014-05-08 Matheson Tri-Gas, Inc. Methods for selective and conformal epitaxy of highly doped si-containing materials for three dimensional structures
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
US8939781B2 (en) 2012-10-31 2015-01-27 International Business Machines Corporation Implementing reconfigurable power connector for multiple wiring configurations
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US20140141674A1 (en) 2012-11-16 2014-05-22 Liquipel IP, LLC Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
US20150291830A1 (en) 2012-11-16 2015-10-15 Liquipel Ip Llc Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings
US9190486B2 (en) 2012-11-20 2015-11-17 Globalfoundries Inc. Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
US20140145332A1 (en) 2012-11-26 2014-05-29 Globalfoundries Inc. Methods of forming graphene liners and/or cap layers on copper-based conductive structures
US20150292088A1 (en) 2012-11-27 2015-10-15 Claudio Canizares Deposition systems having interchangeable gas injectors and related methods
CN102983093B (zh) 2012-12-03 2016-04-20 安徽三安光电有限公司 一种用于led外延晶圆制程的石墨承载盘
KR102046976B1 (ko) 2012-12-04 2019-12-02 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US9362092B2 (en) 2012-12-07 2016-06-07 LGS Innovations LLC Gas dispersion disc assembly
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
WO2014094103A1 (en) 2012-12-18 2014-06-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
US9064857B2 (en) 2012-12-19 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. N metal for FinFET
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
US9533944B2 (en) 2012-12-27 2017-01-03 Sumitomo Chemical Company, Limited Method for producing oxime
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
EP2750167A1 (en) 2012-12-31 2014-07-02 Imec Method for tuning the effective work function of a gate structure in a semiconductor device
US20140186544A1 (en) 2013-01-02 2014-07-03 Applied Materials, Inc. Metal processing using high density plasma
KR20140089793A (ko) 2013-01-07 2014-07-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN103014846A (zh) 2013-01-14 2013-04-03 东莞市中镓半导体科技有限公司 一种材料气相外延用同心圆环喷头结构
WO2014111492A1 (en) 2013-01-16 2014-07-24 Universiteit Gent Methods for obtaining hydrophilic fluoropolymers
KR102097109B1 (ko) 2013-01-21 2020-04-10 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US10557190B2 (en) 2013-01-24 2020-02-11 Tokyo Electron Limited Substrate processing apparatus and susceptor
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
KR20140095738A (ko) 2013-01-25 2014-08-04 삼성전자주식회사 트랜지스터 및 그 제조 방법
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
EP2765218A1 (en) 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9184045B2 (en) 2013-02-08 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom-up PEALD process
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
US8932923B2 (en) 2013-02-19 2015-01-13 Globalfoundries Inc. Semiconductor gate structure for threshold voltage modulation and method of making same
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
FR3002241B1 (fr) 2013-02-21 2015-11-20 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
JP5934665B2 (ja) 2013-02-22 2016-06-15 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム
TWI615497B (zh) 2013-02-28 2018-02-21 應用材料股份有限公司 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
USD743357S1 (en) 2013-03-01 2015-11-17 Asm Ip Holding B.V. Susceptor
US8790743B1 (en) 2013-03-04 2014-07-29 Asm Ip Holding B.V. Method for controlling cyclic plasma-assisted process
US9593410B2 (en) 2013-03-05 2017-03-14 Applied Materials, Inc. Methods and apparatus for stable substrate processing with multiple RF power supplies
US20150218700A1 (en) 2013-03-08 2015-08-06 Applied Materials, Inc. Chamber component with protective coating suitable for protection against flourine plasma
USD723153S1 (en) 2013-03-08 2015-02-24 Olen Borkholder Recess ceiling fan bezel
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
KR102177738B1 (ko) 2013-03-08 2020-11-11 어플라이드 머티어리얼스, 인코포레이티드 불소 플라즈마에 대한 보호에 적합한 보호 코팅을 갖는 챔버 컴포넌트
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
US8933528B2 (en) 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9312222B2 (en) 2013-03-12 2016-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning approach for improved via landing profile
KR101317942B1 (ko) 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
US20140272341A1 (en) 2013-03-14 2014-09-18 Applied Materials, Inc. Thermal treated sandwich structure layer to improve adhesive strength
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
US9309978B2 (en) 2013-03-14 2016-04-12 Dresser-Rand Company Low head to stem ratio poppet valve
US20140273531A1 (en) 2013-03-14 2014-09-18 Asm Ip Holding B.V. Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
CN105027316B (zh) 2013-03-14 2018-07-17 应用材料公司 薄膜封装-用于oled应用的薄超高阻挡层
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
WO2014140672A1 (en) 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
US9355876B2 (en) 2013-03-15 2016-05-31 Applied Materials, Inc. Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations
US9865431B2 (en) 2013-03-15 2018-01-09 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
US8984962B2 (en) 2013-03-15 2015-03-24 H. Aaron Christmann Rotatable torque-measuring apparatus and method
TWI627305B (zh) 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
JP2016519736A (ja) 2013-03-15 2016-07-07 プライム グループ アライアンス, リミテッド ライアビリティ カンパニーPrime Group Alliance, LLC 非粘性層シーリングを有する対向ピストン内燃機関
US9324559B2 (en) * 2013-03-15 2016-04-26 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film deposition apparatus with multi chamber design and film deposition methods
US20140273530A1 (en) 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
USD734377S1 (en) 2013-03-28 2015-07-14 Hirata Corporation Top cover of a load lock chamber
JP6107327B2 (ja) 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
JP6134191B2 (ja) 2013-04-07 2017-05-24 村川 惠美 回転型セミバッチａｌｄ装置
US9142437B2 (en) 2013-04-10 2015-09-22 Globalfoundries Inc. System for separately handling different size FOUPs
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
JP2014216647A (ja) 2013-04-29 2014-11-17 エーエスエムアイピー ホールディング ビー．ブイ． 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法
US8956939B2 (en) 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
USD766849S1 (en) 2013-05-15 2016-09-20 Ebara Corporation Substrate retaining ring
US9252024B2 (en) 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
JP2014229680A (ja) 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US8900467B1 (en) 2013-05-25 2014-12-02 HGST Netherlands B.V. Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
USD726365S1 (en) 2013-05-29 2015-04-07 Sis Resources Ltd. Mouthpiece plug for electronic cigarette
US9552979B2 (en) 2013-05-31 2017-01-24 Asm Ip Holding B.V. Cyclic aluminum nitride deposition in a batch reactor
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
USD794185S1 (en) 2013-06-17 2017-08-08 Q-Med Ab Syringe part
CN104244620B (zh) 2013-06-19 2017-05-31 上海微电子装备有限公司 一种大型半导体设备集约型装配柜体
EP3014651B8 (en) 2013-06-26 2018-12-26 Applied Materials, Inc. Methods of depositing a metal alloy film
US20150004798A1 (en) 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
SG11201510292VA (en) 2013-07-02 2016-01-28 Ultratech Inc Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9490149B2 (en) 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9099423B2 (en) 2013-07-12 2015-08-04 Asm Ip Holding B.V. Doped semiconductor films and processing
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
US20150030766A1 (en) 2013-07-25 2015-01-29 Novellus Systems, Inc. Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline
US9099393B2 (en) 2013-08-05 2015-08-04 International Business Machines Corporation Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US8900999B1 (en) 2013-08-16 2014-12-02 Applied Materials, Inc. Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
WO2015026230A1 (en) 2013-08-19 2015-02-26 Asm Ip Holding B.V. Twin-assembly of diverging semiconductor processing systems
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
JP6338462B2 (ja) 2013-09-11 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置
USD724553S1 (en) 2013-09-13 2015-03-17 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
US9284642B2 (en) 2013-09-19 2016-03-15 Asm Ip Holding B.V. Method for forming oxide film by plasma-assisted processing
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9018103B2 (en) 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
CN105556654B (zh) 2013-09-26 2019-07-26 应用材料公司 用于传送基板的气动终端受动器装置、基板传送系统与方法
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
USD756929S1 (en) 2013-09-30 2016-05-24 Danfoss A/S Electrical connector for refrigeration valve
KR101846850B1 (ko) 2013-09-30 2018-04-09 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 장치, 기판 처리 시스템 및 기록 매체
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
JP6267080B2 (ja) 2013-10-07 2018-01-24 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
US9034717B2 (en) 2013-10-16 2015-05-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor-on-insulator structure and method of fabricating the same
US9576790B2 (en) 2013-10-16 2017-02-21 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US20150111374A1 (en) 2013-10-18 2015-04-23 International Business Machines Corporation Surface treatment in a dep-etch-dep process
JP5847783B2 (ja) 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9343308B2 (en) 2013-10-28 2016-05-17 Asm Ip Holding B.V. Method for trimming carbon-containing film at reduced trimming rate
CN106232611A (zh) 2013-10-28 2016-12-14 赛孚思科技有限公司 包含酰胺基亚胺配位体的金属配合物
KR20150050638A (ko) 2013-10-29 2015-05-11 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
US20150125628A1 (en) 2013-11-06 2015-05-07 Asm Ip Holding B.V. Method of depositing thin film
KR20150052996A (ko) 2013-11-07 2015-05-15 삼성디스플레이 주식회사 기판 이송 장치 및 이를 포함하는 박막 증착 장치
USD739222S1 (en) 2013-11-13 2015-09-22 Jeff Chadbourne Two-piece magnetic clamp
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
CN115094377A (zh) 2013-11-21 2022-09-23 恩特格里斯公司 用于在等离子体系统中使用的室组件的表面涂层
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
TWI588286B (zh) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
KR20150061179A (ko) 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9355882B2 (en) 2013-12-04 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Transfer module for bowed wafers
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
TW201525173A (zh) 2013-12-09 2015-07-01 Applied Materials Inc 選擇性層沉積之方法
JP2015115461A (ja) 2013-12-11 2015-06-22 大日本印刷株式会社 微細構造体の欠陥修正方法および製造方法
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
TWI635552B (zh) 2013-12-13 2018-09-11 昕芙旎雅股份有限公司 設備前端模組（ｅｆｅｍ）
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
CN114093812A (zh) 2013-12-17 2022-02-25 德克萨斯仪器股份有限公司 使用光刻-冷冻-光刻-蚀刻工艺的细长接触件
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
US9984874B2 (en) 2013-12-18 2018-05-29 Imec Vzw Method of producing transition metal dichalcogenide layer
US9362385B2 (en) 2013-12-18 2016-06-07 Taiwan Semiconductor Manufacturing Company Ltd. Method for tuning threshold voltage of semiconductor device with metal gate structure
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US20150179640A1 (en) 2013-12-19 2015-06-25 Globalfoundries Inc. Common fabrication of different semiconductor devices with different threshold voltages
JP6230900B2 (ja) 2013-12-19 2017-11-15 東京エレクトロン株式会社 基板処理装置
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
KR20150073251A (ko) 2013-12-20 2015-07-01 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
KR102146705B1 (ko) 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
US20150175467A1 (en) 2013-12-23 2015-06-25 Infineon Technologies Austria Ag Mold, method for producing a mold, and method for forming a mold article
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
JP6247095B2 (ja) 2013-12-27 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN104752351B (zh) 2013-12-30 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
BR112016016264A2 (pt) 2014-01-17 2017-08-08 Koninklijke Philips Nv Sistema de aquecimento, reator para processamento de pastilha, e método de aquecimento de uma superfície de aquecimento de um objeto até uma temperatura de processamento de ao menos 100 °c
US9328416B2 (en) 2014-01-17 2016-05-03 Lam Research Corporation Method for the reduction of defectivity in vapor deposited films
US9677172B2 (en) 2014-01-21 2017-06-13 Applied Materials, Inc. Methods for forming a cobalt-ruthenium liner layer for interconnect structures
US20170145564A1 (en) 2014-01-23 2017-05-25 Ultratech, Inc. Vapor delivery system
JP6324739B2 (ja) 2014-01-27 2018-05-16 株式会社Kelk 半導体ウェーハの温度制御装置、及び半導体ウェーハの温度制御方法
JP5805227B2 (ja) 2014-01-28 2015-11-04 東京エレクトロン株式会社 プラズマ処理装置
US9722017B2 (en) 2014-01-28 2017-08-01 Mitsubishi Electric Corporation Silicon carbide semiconductor device
US9384950B2 (en) 2014-01-31 2016-07-05 Applied Materials, Inc. Chamber coatings
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
KR102306612B1 (ko) 2014-01-31 2021-09-29 램 리써치 코포레이션 진공-통합된 하드마스크 프로세스 및 장치
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
TWI686499B (zh) 2014-02-04 2020-03-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沉積
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
USD725168S1 (en) 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
USD732145S1 (en) 2014-02-04 2015-06-16 Asm Ip Holding B.V. Shower plate
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
US8993457B1 (en) 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US9416447B2 (en) 2014-02-07 2016-08-16 HGST Netherlands B.V. Method for line density multiplication using block copolymers and sequential infiltration synthesis
US9281211B2 (en) 2014-02-10 2016-03-08 International Business Machines Corporation Nanoscale interconnect structure
US9721947B2 (en) 2014-02-12 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
USD733257S1 (en) 2014-02-14 2015-06-30 Hansgrohe Se Overhead shower
JP6249815B2 (ja) 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9916995B2 (en) 2014-02-24 2018-03-13 Lam Research Corporation Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9362180B2 (en) 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
JP6303592B2 (ja) 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
US9576952B2 (en) 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
US9425078B2 (en) 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
CN107393851B (zh) 2014-02-27 2021-02-05 斯克林集团公司 基板处理装置以及基板处理方法
JP6278751B2 (ja) 2014-03-04 2018-02-14 東京エレクトロン株式会社 搬送方法及び基板処理装置
KR20150104817A (ko) 2014-03-06 2015-09-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US20150255324A1 (en) 2014-03-06 2015-09-10 Applied Materials, Inc. Seamless gap-fill with spatial atomic layer deposition
JP6204231B2 (ja) 2014-03-11 2017-09-27 大陽日酸株式会社 空気液化分離装置及び方法
JP2015173230A (ja) 2014-03-12 2015-10-01 株式会社東芝 半導体装置及び半導体装置の製造方法
US10109534B2 (en) 2014-03-14 2018-10-23 Applied Materials, Inc. Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
JP6379550B2 (ja) 2014-03-18 2018-08-29 東京エレクトロン株式会社 成膜装置
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
JP6275822B2 (ja) 2014-03-20 2018-02-07 株式会社東芝 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法
JP5944429B2 (ja) 2014-03-20 2016-07-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
JP6270575B2 (ja) 2014-03-24 2018-01-31 株式会社日立国際電気 反応管、基板処理装置及び半導体装置の製造方法
JP6304592B2 (ja) 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5941491B2 (ja) 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
WO2015145751A1 (ja) 2014-03-28 2015-10-01 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9637823B2 (en) 2014-03-31 2017-05-02 Asm Ip Holding B.V. Plasma atomic layer deposition
JP6254036B2 (ja) 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
US20150280051A1 (en) 2014-04-01 2015-10-01 Tsmc Solar Ltd. Diffuser head apparatus and method of gas distribution
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
KR102094470B1 (ko) 2014-04-08 2020-03-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9184054B1 (en) 2014-04-25 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
US9343294B2 (en) 2014-04-28 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having air gap and method of forming the same
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
JP6324800B2 (ja) 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
US10994333B2 (en) 2014-05-08 2021-05-04 Stratasys Ltd. Method and apparatus for 3D printing by selective sintering
US9917295B2 (en) 2014-05-13 2018-03-13 Uchicago Argonne, Llc Methods for using atomic layer deposition to produce a film for solid state electrolytes and protective electrode coatings for lithium batteries
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
US9343343B2 (en) 2014-05-19 2016-05-17 Asm Ip Holding B.V. Method for reducing particle generation at bevel portion of substrate
US9257557B2 (en) 2014-05-20 2016-02-09 Globalfoundries Inc. Semiconductor structure with self-aligned wells and multiple channel materials
US9577192B2 (en) 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
USD733262S1 (en) 2014-05-22 2015-06-30 Young Boung Kang Disposer of connection member for kitchen sink bowl
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
WO2015182699A1 (ja) 2014-05-30 2015-12-03 株式会社 荏原製作所 真空排気システム
JP6301203B2 (ja) 2014-06-02 2018-03-28 株式会社ディスコ チップの製造方法
JP6225837B2 (ja) 2014-06-04 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
EP2953162A1 (en) 2014-06-06 2015-12-09 IMEC vzw Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10998228B2 (en) 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
US9978632B2 (en) 2014-06-13 2018-05-22 Applied Materials, Inc. Direct lift process apparatus
USD743513S1 (en) 2014-06-13 2015-11-17 Asm Ip Holding B.V. Seal ring
DE102014108352A1 (de) 2014-06-13 2015-12-17 Forschungszentrum Jülich GmbH Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement
JP6225842B2 (ja) 2014-06-16 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
KR102195003B1 (ko) 2014-06-18 2020-12-24 삼성전자주식회사 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법
USD753629S1 (en) 2014-06-19 2016-04-12 Yamaha Corporation Speaker
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US20150367253A1 (en) 2014-06-24 2015-12-24 Us Synthetic Corporation Photoluminescent thin-layer chromatography plate and methods for making same
US20150380296A1 (en) 2014-06-25 2015-12-31 Lam Research Corporation Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
US9825191B2 (en) 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
USD736348S1 (en) 2014-07-07 2015-08-11 Jiangmen Triumph Rain Showers Co., LTD Spray head for a shower
US9349620B2 (en) 2014-07-09 2016-05-24 Asm Ip Holdings B.V. Apparatus and method for pre-baking substrate upstream of process chamber
US9617637B2 (en) 2014-07-15 2017-04-11 Lam Research Corporation Systems and methods for improving deposition rate uniformity and reducing defects in substrate processing systems
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
KR102262887B1 (ko) 2014-07-21 2021-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US10176996B2 (en) 2014-08-06 2019-01-08 Globalfoundries Inc. Replacement metal gate and fabrication process with reduced lithography steps
USD751176S1 (en) 2014-08-07 2016-03-08 Hansgrohe Se Overhead shower
US9252238B1 (en) 2014-08-18 2016-02-02 Lam Research Corporation Semiconductor structures with coplanar recessed gate layers and fabrication methods
KR20160021958A (ko) 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
USD782419S1 (en) 2014-08-22 2017-03-28 Christopher C. Willette Female keyed lamp plug
US10224222B2 (en) 2014-09-09 2019-03-05 Asm Ip Holding B.V. Assembly of liner and flange for vertical furnace as well as a vertical process furnace
USD742202S1 (en) 2014-09-11 2015-11-03 Thomas Jason Cyphers Sign frame key
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
USD764196S1 (en) 2014-09-17 2016-08-23 Sheryl Handler Stool
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
WO2016048306A1 (en) 2014-09-24 2016-03-31 Intel Corporation Scaled tfet transistor formed using nanowire with surface termination
US9478414B2 (en) 2014-09-26 2016-10-25 Asm Ip Holding B.V. Method for hydrophobization of surface of silicon-containing film by ALD
JP6257000B2 (ja) 2014-09-30 2018-01-10 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および反応管
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
US9558946B2 (en) 2014-10-03 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US9331093B2 (en) 2014-10-03 2016-05-03 Sandisk Technologies Inc. Three dimensional NAND device with silicon germanium heterostructure channel
US10192770B2 (en) 2014-10-03 2019-01-29 Applied Materials, Inc. Spring-loaded pins for susceptor assembly and processing methods using same
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
EP3009482B1 (en) 2014-10-13 2018-10-03 Heraeus Deutschland GmbH & Co. KG Copper coloured paint
USD759137S1 (en) 2014-10-14 2016-06-14 Victor Equipment Company Consumables adapter for a welding torch
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
JP2016086099A (ja) 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
KR101535573B1 (ko) 2014-11-04 2015-07-13 연세대학교 산학협력단 전이금속 칼코겐 화합물 합성 방법
KR102268187B1 (ko) 2014-11-10 2021-06-24 삼성전자주식회사 자기 기억 소자 및 그 제조 방법
US9305836B1 (en) 2014-11-10 2016-04-05 International Business Machines Corporation Air gap semiconductor structure with selective cap bilayer
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
KR102493327B1 (ko) 2014-11-21 2023-01-27 어플라이드 머티어리얼스, 인코포레이티드 알코올 보조 ald 막 증착
JP2016098406A (ja) 2014-11-21 2016-05-30 東京エレクトロン株式会社 モリブデン膜の成膜方法
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6354539B2 (ja) 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9837281B2 (en) 2014-11-26 2017-12-05 Asm Ip Holding B.V. Cyclic doped aluminum nitride deposition
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9406683B2 (en) 2014-12-04 2016-08-02 International Business Machines Corporation Wet bottling process for small diameter deep trench capacitors
US9951421B2 (en) 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
KR102307633B1 (ko) 2014-12-10 2021-10-06 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20160168699A1 (en) 2014-12-12 2016-06-16 Asm Ip Holding B.V. Method for depositing metal-containing film using particle-reduction step
US10062564B2 (en) 2014-12-15 2018-08-28 Tokyo Electron Limited Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
JP6404111B2 (ja) 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
US9820289B1 (en) 2014-12-18 2017-11-14 Sprint Spectrum L.P. Method and system for managing quantity of carriers in air interface connection based on type of content
CN105762068A (zh) 2014-12-19 2016-07-13 联华电子股份有限公司 半导体元件及其制作方法
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9515072B2 (en) 2014-12-26 2016-12-06 Taiwan Semiconductor Manufacturing Company Ltd. FinFET structure and method for manufacturing thereof
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US9324846B1 (en) 2015-01-08 2016-04-26 Globalfoundries Inc. Field plate in heterojunction bipolar transistor with improved break-down voltage
USD753269S1 (en) 2015-01-09 2016-04-05 Asm Ip Holding B.V. Top plate
US9396956B1 (en) 2015-01-16 2016-07-19 Asm Ip Holding B.V. Method of plasma-enhanced atomic layer etching
US9496040B2 (en) 2015-01-22 2016-11-15 Sandisk Technologies Llc Adaptive multi-page programming methods and apparatus for non-volatile memory
TW201639063A (zh) 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
JP6470057B2 (ja) 2015-01-29 2019-02-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102185458B1 (ko) 2015-02-03 2020-12-03 에이에스엠 아이피 홀딩 비.브이. 선택적 퇴적
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
US20180044800A1 (en) 2015-02-13 2018-02-15 Entegris, Inc. Coatings for enhancement of properties and performance of substrate articles and apparatus
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
USD808254S1 (en) 2015-02-25 2018-01-23 Aluvision N.V. Frame tightener
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
US10548504B2 (en) 2015-03-06 2020-02-04 Ethicon Llc Overlaid multi sensor radio frequency (RF) electrode system to measure tissue compression
US9808246B2 (en) 2015-03-06 2017-11-07 Ethicon Endo-Surgery, Llc Method of operating a powered surgical instrument
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
IL237775B (en) 2015-03-16 2019-03-31 Redler Tech Ltd Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent
JP6477075B2 (ja) 2015-03-17 2019-03-06 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
JP2016178223A (ja) 2015-03-20 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6484478B2 (ja) 2015-03-25 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN107406195B (zh) 2015-03-26 2019-04-09 村田机械株式会社 物品的支承装置以及支承方法
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
JP6458595B2 (ja) 2015-03-27 2019-01-30 東京エレクトロン株式会社 成膜装置及び成膜方法並びに記憶媒体
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
KR102376982B1 (ko) 2015-04-14 2022-03-21 삼성전자주식회사 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치
US20160307708A1 (en) 2015-04-16 2016-10-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tantalum-containing film forming compositions and vapor deposition of tantalum-containing films
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
US9343297B1 (en) 2015-04-22 2016-05-17 Asm Ip Holding B.V. Method for forming multi-element thin film constituted by at least five elements by PEALD
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
TWI615917B (zh) 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
WO2016178777A1 (en) 2015-05-07 2016-11-10 Applied Materials, Inc. Corrosion control for chamber components
US10177024B2 (en) 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
JP1544542S (ko) 2015-05-14 2019-02-18
US10253412B2 (en) * 2015-05-22 2019-04-09 Lam Research Corporation Deposition apparatus including edge plenum showerhead assembly
JP1547057S (ko) 2015-05-28 2016-04-04
US9941111B2 (en) 2015-05-29 2018-04-10 Infineon Technologies Ag Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
JP1545222S (ko) 2015-06-10 2016-03-07
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US10053774B2 (en) 2015-06-12 2018-08-21 Asm Ip Holding B.V. Reactor system for sublimation of pre-clean byproducts and method thereof
WO2016200568A1 (en) 2015-06-12 2016-12-15 Applied Materials, Inc. An injector for semiconductor epitaxy growth
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
WO2017004050A1 (en) 2015-06-29 2017-01-05 Applied Materials, Inc. Temperature controlled substrate processing
KR102417934B1 (ko) 2015-07-07 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
US10174437B2 (en) 2015-07-09 2019-01-08 Applied Materials, Inc. Wafer electroplating chuck assembly
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6578243B2 (ja) 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
US20170025291A1 (en) 2015-07-22 2017-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-chamber furnace for batch processing
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
US9793097B2 (en) 2015-07-27 2017-10-17 Lam Research Corporation Time varying segmented pressure control
FR3039531A1 (ko) 2015-07-28 2017-02-03 Nexdot
WO2017018834A1 (ko) 2015-07-29 2017-02-02 한국표준과학연구원 2차원 전이금속 디칼코지나이드 박막의 제조 방법
JP6560924B2 (ja) 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
JP6502779B2 (ja) 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
KR102420087B1 (ko) 2015-07-31 2022-07-12 삼성전자주식회사 반도체 소자의 제조 방법
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
EP3329032B1 (en) 2015-07-31 2022-09-21 Versum Materials US, LLC Compositions and methods for depositing silicon nitride films
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
US10738381B2 (en) 2015-08-13 2020-08-11 Asm Ip Holding B.V. Thin film deposition apparatus
KR102417930B1 (ko) 2015-08-13 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 이를 포함하는 증착 시스템
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US20170051402A1 (en) 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
US20170051405A1 (en) 2015-08-18 2017-02-23 Asm Ip Holding B.V. Method for forming sin or sicn film in trenches by peald
JP1549882S (ko) 2015-08-18 2016-05-23
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9711360B2 (en) 2015-08-27 2017-07-18 Applied Materials, Inc. Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
US9455177B1 (en) 2015-08-31 2016-09-27 Dow Global Technologies Llc Contact hole formation methods
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US11514096B2 (en) 2015-09-01 2022-11-29 Panjiva, Inc. Natural language processing for entity resolution
JP6486479B2 (ja) 2015-09-03 2019-03-20 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラム、および供給系
JP1546345S (ko) 2015-09-04 2016-03-22
JP6448502B2 (ja) 2015-09-09 2019-01-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
KR102251774B1 (ko) 2015-09-11 2021-05-12 버슘머트리얼즈 유에스, 엘엘씨 콘포말한 금속 또는 메탈로이드 실리콘 니트라이드 막을 증착시키는 방법 및 얻어진 막
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
WO2017053771A1 (en) 2015-09-25 2017-03-30 Applied Materials, Inc. Grooved backing plate for standing wave compensation
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
JP2017069313A (ja) 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
KR102395997B1 (ko) 2015-09-30 2022-05-10 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
WO2017058988A1 (en) 2015-10-02 2017-04-06 Corning Incorporated Methods for treating a glass surface to reduce particle adhesion
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
CN114864450A (zh) 2015-10-09 2022-08-05 应用材料公司 用于epi工艺的晶片加热的二极管激光器
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
TWI740848B (zh) 2015-10-16 2021-10-01 荷蘭商Ａｓｍ智慧財產控股公司 實施原子層沉積以得閘極介電質
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
JP6464990B2 (ja) 2015-10-21 2019-02-06 東京エレクトロン株式会社 縦型熱処理装置
KR102424720B1 (ko) 2015-10-22 2022-07-25 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
JP6929279B2 (ja) 2015-10-22 2021-09-01 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ＳｉＯおよびＳｉＮを含む流動性膜を堆積させる方法
US20180312966A1 (en) 2015-10-23 2018-11-01 Applied Materials, Inc. Methods For Spatial Metal Atomic Layer Deposition
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
USD787458S1 (en) 2015-11-18 2017-05-23 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
WO2017091345A1 (en) 2015-11-25 2017-06-01 Applied Materials, Inc. New materials for tensile stress and low contact resistance and method of forming
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
JP6613864B2 (ja) 2015-12-14 2019-12-04 Ｔｄｋ株式会社 ミニエンバイロメント装置
WO2017105515A1 (en) 2015-12-18 2017-06-22 Intel Corporation Stacked transistors
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
CH711990A2 (de) 2015-12-22 2017-06-30 Interglass Tech Ag Vakuumbeschichtungsanlage zum Beschichten von Linsen.
AT518081B1 (de) 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
TWD178699S (zh) 2016-01-08 2016-10-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的氣體分散板
TWD178424S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的氣流控制板
TWD178425S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的電極板
TWD178698S (zh) 2016-01-08 2016-10-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的反應器外壁
US9412648B1 (en) 2016-01-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Via patterning using multiple photo multiple etch
US10865477B2 (en) 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
US9496225B1 (en) 2016-02-08 2016-11-15 International Business Machines Corporation Recessed metal liner contact with copper fill
US9570302B1 (en) 2016-02-10 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of patterning a material layer
JP6538582B2 (ja) 2016-02-15 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
WO2017143246A1 (en) 2016-02-19 2017-08-24 Sigma-Aldrich Co., Llc Deposition of molybdenum thin films using a molybdenum carbonyl precursor
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9666528B1 (en) 2016-02-23 2017-05-30 International Business Machines Corporation BEOL vertical fuse formed over air gap
US9748145B1 (en) 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
USD855089S1 (en) 2016-02-29 2019-07-30 Moldman Systems Llc Mixer assembly
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US10073342B2 (en) 2016-03-04 2018-09-11 Micron Technology, Inc. Method of forming patterns
US11114332B2 (en) * 2016-03-07 2021-09-07 Globalwafers Co., Ltd. Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
TWI722132B (zh) 2016-03-13 2021-03-21 美商應用材料股份有限公司 用於間隔墊應用之氮化矽薄膜的選擇性沉積
US10134672B2 (en) 2016-03-15 2018-11-20 Toshiba Memory Corporation Semiconductor memory device having a stepped structure and contact wirings formed thereon
KR20170107323A (ko) 2016-03-15 2017-09-25 연세대학교 산학협력단 전이금속 칼코겐 화합물 합금 및 그의 제조방법
CN107201507B (zh) * 2016-03-17 2019-09-17 Asm知识产权私人控股有限公司 衬底支撑板和包含其的薄膜沉积设备
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
JP6576277B2 (ja) 2016-03-23 2019-09-18 東京エレクトロン株式会社 窒化膜の形成方法
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
KR102262750B1 (ko) 2016-03-28 2021-06-10 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP6566904B2 (ja) 2016-03-29 2019-08-28 東京エレクトロン株式会社 基板処理装置
JP6608753B2 (ja) 2016-03-31 2019-11-20 株式会社ノリタケカンパニーリミテド ＰｄＲｕ合金電極材料およびその製造方法
KR20180130548A (ko) 2016-04-01 2018-12-07 쓰리엠 이노베이티브 프로퍼티즈 캄파니 롤-투-롤 원자 층 침착 장치 및 방법
JP6095825B2 (ja) 2016-04-08 2017-03-15 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US10049913B2 (en) 2016-04-12 2018-08-14 Tokyo Electron Limited Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces
US10388492B2 (en) 2016-04-14 2019-08-20 Fm Industries, Inc. Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
KR101820237B1 (ko) 2016-04-29 2018-01-19 한양대학교 산학협력단 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10115586B2 (en) 2016-05-08 2018-10-30 Tokyo Electron Limited Method for depositing a planarization layer using polymerization chemical vapor deposition
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US9680268B1 (en) 2016-05-18 2017-06-13 Itt Manufacturing Enterprises Llc Genderless electrical connectors
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
USD849662S1 (en) 2016-05-21 2019-05-28 Worthington Industries, Inc. Cylinder support system
US9987747B2 (en) 2016-05-24 2018-06-05 Semes Co., Ltd. Stocker for receiving cassettes and method of teaching a stocker robot disposed therein
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
KR102523717B1 (ko) 2016-05-29 2023-04-19 도쿄엘렉트론가부시키가이샤 선택적 실리콘 질화물 에칭 방법
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
KR102326377B1 (ko) 2016-06-07 2021-11-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US10002958B2 (en) 2016-06-08 2018-06-19 The United States Of America, As Represented By The Secretary Of The Navy Diamond on III-nitride device
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
USD785766S1 (en) 2016-06-15 2017-05-02 Asm Ip Holding B.V. Shower plate
JP6585551B2 (ja) 2016-06-15 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
US10217863B2 (en) 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
KR101969274B1 (ko) 2016-06-30 2019-04-15 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US20160314962A1 (en) 2016-06-30 2016-10-27 American Air Liquide, Inc. Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
WO2018008088A1 (ja) 2016-07-05 2018-01-11 株式会社日立国際電気 基板処理装置、ガスノズルおよび半導体装置の製造方法
US9812319B1 (en) 2016-07-06 2017-11-07 Asm Ip Holding B.V. Method for forming film filled in trench without seam or void
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
EP3267187B1 (en) 2016-07-08 2020-04-15 Volvo Car Corporation Silicon carbide based field effect gas sensor for high temperature applications
USD793352S1 (en) 2016-07-11 2017-08-01 Asm Ip Holding B.V. Getter plate
CN109661481B (zh) 2016-07-14 2021-11-30 恩特格里斯公司 使用MoOC14的CVD Mo沉积
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
CN109477214A (zh) 2016-07-19 2019-03-15 应用材料公司 可流动含硅膜的沉积
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium
JP6616258B2 (ja) 2016-07-26 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、蓋部カバーおよび半導体装置の製造方法
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US20180033614A1 (en) 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US9865456B1 (en) 2016-08-12 2018-01-09 Micron Technology, Inc. Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102429608B1 (ko) 2016-08-17 2022-08-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
US10468244B2 (en) 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
CA2974387A1 (en) 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
JP6710130B2 (ja) 2016-09-13 2020-06-17 東京エレクトロン株式会社 基板処理装置
JP6710134B2 (ja) 2016-09-27 2020-06-17 東京エレクトロン株式会社 ガス導入機構及び処理装置
KR102600998B1 (ko) 2016-09-28 2023-11-13 삼성전자주식회사 반도체 장치
JP6550029B2 (ja) 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ノズル基部および半導体装置の製造方法
JP6270952B1 (ja) 2016-09-28 2018-01-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体。
US9847221B1 (en) * 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US9997606B2 (en) 2016-09-30 2018-06-12 International Business Machines Corporation Fully depleted SOI device for reducing parasitic back gate capacitance
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US20170044664A1 (en) 2016-10-28 2017-02-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR101840378B1 (ko) 2016-11-09 2018-03-21 한국화학연구원 올레핀 복분해 반응용 촉매 및 이의 제조방법
JP6737139B2 (ja) 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102147174B1 (ko) 2016-11-18 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법
JP6804270B2 (ja) 2016-11-21 2020-12-23 東京エレクトロン株式会社 基板処理装置、および基板処理方法
US20180148832A1 (en) 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable carbon films using hot wire chemical vapor deposition
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US9991277B1 (en) 2016-11-28 2018-06-05 Sandisk Technologies Llc Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10619242B2 (en) 2016-12-02 2020-04-14 Asm Ip Holding B.V. Atomic layer deposition of rhenium containing thin films
US11761084B2 (en) 2016-12-02 2023-09-19 Asm Ip Holding B.V. Substrate processing apparatus and method of processing substrate
JP6824717B2 (ja) 2016-12-09 2021-02-03 東京エレクトロン株式会社 ＳｉＣ膜の成膜方法
US20190273133A1 (en) 2016-12-14 2019-09-05 Intel Corporation Transistor source/drain amorphous interlayer arrangements
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
KR102403102B1 (ko) 2016-12-15 2022-05-26 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 장치
US10591078B2 (en) 2016-12-15 2020-03-17 The Boeing Company Fluid flow control device
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9960033B1 (en) 2016-12-16 2018-05-01 Asm Ip Holding B.V. Method of depositing and etching Si-containing film
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20180174801A1 (en) 2016-12-21 2018-06-21 Ulvac Technologies, Inc. Apparatuses and methods for surface treatment
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
JP6862821B2 (ja) 2016-12-26 2021-04-21 東京エレクトロン株式会社 成膜装置、成膜方法及び断熱部材
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10049426B2 (en) 2017-01-03 2018-08-14 Qualcomm Incorporated Draw call visibility stream
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
TWI760421B (zh) 2017-01-18 2022-04-11 日商東京威力科創股份有限公司 使用六氟化硫之優先氮化矽蝕刻方法
JP1584906S (ko) 2017-01-31 2017-08-28
JP1584241S (ko) 2017-01-31 2017-08-21
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
JP2018133471A (ja) 2017-02-16 2018-08-23 漢民科技股▲分▼有限公司 気相成膜装置
JP2018148143A (ja) 2017-03-08 2018-09-20 株式会社東芝 シャワープレート、処理装置、及び吐出方法
US11081337B2 (en) 2017-03-15 2021-08-03 Versum Materials U.S., LLC Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
US10629415B2 (en) 2017-03-28 2020-04-21 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrate
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR20230127377A (ko) 2017-04-10 2023-08-31 램 리써치 코포레이션 몰리브덴을 함유하는 저 저항률 막들
US9984869B1 (en) 2017-04-17 2018-05-29 Asm Ip Holding B.V. Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US20180331117A1 (en) 2017-05-12 2018-11-15 Sandisk Technologies Llc Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof
US20180325414A1 (en) 2017-05-12 2018-11-15 Tech4Imaging Llc Electro-magneto volume tomography system and methodology for non-invasive volume tomography
US10153195B1 (en) 2017-05-18 2018-12-11 Micron Technology, Inc. Semiconductor constructions comprising dielectric material
KR102417931B1 (ko) 2017-05-30 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치 및 이를 포함하는 기판 처리 장치
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
US10246777B2 (en) 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
KR102474876B1 (ko) 2017-06-15 2022-12-07 삼성전자주식회사 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법
US20180363139A1 (en) 2017-06-20 2018-12-20 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10361522B2 (en) 2017-06-29 2019-07-23 Commscope Technologies Llc Inner contact for coaxial cable
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
USD867867S1 (en) 2017-07-31 2019-11-26 Ge Healthcare Bio-Sciences Corp. Tubing clamp
KR102481410B1 (ko) 2017-07-31 2022-12-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
USD859136S1 (en) 2017-07-31 2019-09-10 Ge Healthcare Bio-Sciences Corp. Tubing clamp
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
US11358113B2 (en) 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Non-thermal micro-plasma conversion of hydrocarbons
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
TWI813430B (zh) 2017-08-09 2023-08-21 荷蘭商Ａｓｍ智慧財產控股公司 用於儲存基板用之卡匣的儲存設備及備有其之處理設備
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10763108B2 (en) 2017-08-18 2020-09-01 Lam Research Corporation Geometrically selective deposition of a dielectric film
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US20190067095A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Layer forming method
US20190067003A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US20190067014A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10106892B1 (en) 2017-08-31 2018-10-23 Globalfoundries Inc. Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
US10530143B2 (en) 2017-09-21 2020-01-07 Accessesp Uk Limited Stress control cones for downhole electrical power system tubing encapsulated power cables
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
CN111356785A (zh) 2017-11-19 2020-06-30 应用材料公司 用于金属氧化物在金属表面上的ald的方法
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
KR102597978B1 (ko) 2017-11-27 2023-11-06 에이에스엠 아이피 홀딩 비.브이. 배치 퍼니스와 함께 사용하기 위한 웨이퍼 카세트를 보관하기 위한 보관 장치
CN111344522B (zh) 2017-11-27 2022-04-12 阿斯莫Ip控股公司 包括洁净迷你环境的装置
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11037780B2 (en) 2017-12-12 2021-06-15 Asm Ip Holding B.V. Method for manufacturing semiconductor device with helium-containing gas
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US20190189447A1 (en) * 2017-12-19 2019-06-20 Lam Research Corporation Method for forming square spacers
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
KR20200108016A (ko) 2018-01-19 2020-09-16 에이에스엠 아이피 홀딩 비.브이. 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법
CN108389798B (zh) 2018-01-24 2021-02-02 信利（惠州）智能显示有限公司 刻蚀方法、低温多晶硅薄膜晶体管及amoled面板
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
KR20200104923A (ko) 2018-01-26 2020-09-04 어플라이드 머티어리얼스, 인코포레이티드 실리콘 질화물 박막들을 위한 처리 방법들
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US20190249303A1 (en) 2018-02-09 2019-08-15 Asm Ip Holding B.V. Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en) 2018-02-14 2023-06-27 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11087961B2 (en) 2018-03-02 2021-08-10 Lam Research Corporation Quartz component with protective coating
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
JP6519897B2 (ja) 2018-04-10 2019-05-29 シンフォニアテクノロジー株式会社 パージノズルユニット、ロードポート
US10782613B2 (en) 2018-04-19 2020-09-22 International Business Machines Corporation Polymerizable self-assembled monolayers for use in atomic layer deposition
US10580645B2 (en) 2018-04-30 2020-03-03 Asm Ip Holding B.V. Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
US20190330740A1 (en) 2018-04-30 2019-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
US11639547B2 (en) 2018-05-03 2023-05-02 Applied Materials, Inc. Halogen resistant coatings and methods of making and using thereof
US20190346300A1 (en) 2018-05-08 2019-11-14 Asm Ip Holding B.V. Thin film forming method
KR20190128558A (ko) 2018-05-08 2019-11-18 에이에스엠 아이피 홀딩 비.브이. 기판 상에 산화물 막을 주기적 증착 공정에 의해 증착하기 위한 방법 및 관련 소자 구조
US20190348261A1 (en) 2018-05-09 2019-11-14 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
EP3791231A4 (en) 2018-05-11 2022-01-26 Lam Research Corporation METHODS FOR MAKING EUV PATTERNABLE HARD MASKS
TWI816783B (zh) 2018-05-11 2023-10-01 荷蘭商Ａｓｍ 智慧財產控股公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
AT520629B1 (de) 2018-05-22 2019-06-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US20190368040A1 (en) 2018-06-01 2019-12-05 Asm Ip Holding B.V. Infiltration apparatus and methods of infiltrating an infiltrateable material
TW202013553A (zh) 2018-06-04 2020-04-01 荷蘭商Ａｓｍ 智慧財產控股公司 水氣降低的晶圓處置腔室
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10483154B1 (en) 2018-06-22 2019-11-19 Globalfoundries Inc. Front-end-of-line device structure and method of forming such a front-end-of-line device structure
TWI819010B (zh) 2018-06-27 2023-10-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
TWI827645B (zh) 2018-08-23 2024-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備及方法
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US20200111669A1 (en) 2018-10-04 2020-04-09 Asm Ip Holding B.V. Method for depositing oxide film by peald using nitrogen
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US20200131634A1 (en) 2018-10-26 2020-04-30 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US20200168485A1 (en) 2018-11-28 2020-05-28 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US20200181770A1 (en) 2018-12-05 2020-06-11 Asm Ip Holding B.V. Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
TW202037745A (zh) 2018-12-14 2020-10-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成裝置結構之方法、其所形成之結構及施行其之系統

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101099223B1 (ko) 2008-08-20 2011-12-27 시너스 테크놀리지, 인코포레이티드 기상 증착을 위한 반응 모듈 및 기상 증착 반응기
US9085825B2 (en) 2012-09-11 2015-07-21 Asm Ip Holding B.V. Deposition apparatus and method of depositing thin film using the same

Also Published As

Publication number Publication date
SG10201901224SA (en) 2019-10-30
JP6782320B2 (ja) 2020-11-11
TWI736840B (zh) 2021-08-21
TW201942947A (zh) 2019-11-01
US20190304776A1 (en) 2019-10-03
JP2019186541A (ja) 2019-10-24
US10867786B2 (en) 2020-12-15
CN110318041B (zh) 2021-09-07
CN110318041A (zh) 2019-10-11
KR20190114682A (ko) 2019-10-10

Similar Documents

Publication Publication Date Title
KR102501472B1 (ko) 기판 처리 방법
US20230040728A1 (en) Substrate processing method and apparatus
US9627221B1 (en) Continuous process incorporating atomic layer etching
US10504742B2 (en) Method of atomic layer etching using hydrogen plasma
US9793135B1 (en) Method of cyclic dry etching using etchant film
US20200111669A1 (en) Method for depositing oxide film by peald using nitrogen
US9396956B1 (en) Method of plasma-enhanced atomic layer etching
US9754779B1 (en) Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10373822B2 (en) Gas flow profile modulated control of overlay in plasma CVD films
TWI654336B (zh) 具有脈衝式電漿曝露之電漿輔助式原子層沉積
US9735024B2 (en) Method of atomic layer etching using functional group-containing fluorocarbon
KR20180069686A (ko) 퇴적 억제 가스를 배출하기 위한 샤워 플레이트 구조물
KR20190016899A (ko) 실리콘 질화막의 성막 방법 및 성막 장치
US10668512B2 (en) Particle removal method and substrate processing method
TWI668323B (zh) 基板處理裝置、基板處理方法及基板保持構件
US20170008015A1 (en) Substrate processing apparatus
US11322352B2 (en) Nitrogen-doped carbon hardmask films
KR20230166329A (ko) 기판 처리 장치 및 기판 처리 방법
KR20230062783A (ko) 기판의 에지에서 재료를 선택적으로 제거하는 방법 및 시스템
KR20210055348A (ko) 박막 증착 장치 및 방법
KR20210024348A (ko) 박막 증착 장치 및 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant