CN103180932A - 用于控制光刻胶线宽粗糙度的方法及设备 - Google Patents
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Abstract
本发明提供用于控制及改型光刻胶层的线宽粗糙度（LWR）的方法和设备。在一个实施例中，一种用于控制配置于基板上的光刻胶层的线宽粗糙度的设备包括：腔室主体，所述腔室主体具有界定内部处理区域的顶壁、侧壁和底壁；微波功率发生器，所述微波功率发生器通过波导件耦接至所述腔室主体；以及一个或多个线圈或磁体，所述线圈或磁体配置在所述腔室主体的外周边周围且邻接所述波导件；以及气体源，所述气体源通过气体递送通路耦接至所述波导件。
Description
技术领域
本发明大体上关于用于控制光刻胶线宽粗糙度的设备与方法，更具体地说，本发明关于用于半导体处理技术中控制光刻胶线宽粗糙度的方法与设备。
背景技术
集成电路已发展至复杂的器件，所述复杂的器件可在单一芯片上包括数百万个部件（例如晶体管、电容器和电阻器）。芯片设计的发展持续需要更快的电路和更大的电路密度。对于更大电路密度的需求使得对集成电路部件的尺寸的减小成为必要。
随着集成电路部件的尺寸被减小（例如减小至次微米尺寸），需要更多元件被放置在半导体集成电路上的给定区域中。因此，为了精确且准确地将甚至更小的特征结构转移至基板上且不造成损伤，光刻工艺已变得愈来愈具有挑战性。为了将精确且准确的特征结构转移至基板上，期望的高分辨率光刻工艺需要具有适合的光源，所述光源可提供期望波长范围的辐射以供曝光之用。此外，光刻工艺需要以最小的光刻胶线宽粗糙度（LWR）将特征结构转移到光刻胶层上。毕竟，需要无缺陷的光掩模以将期望的特征结构转移到光刻胶层上。近来，远紫外光（EUV）辐射源已被用于提供短的曝光波长，以便在基板上提供进一步减小的最小可印刷尺寸。然而，在这么小的尺寸下，光刻胶层的边缘的粗糙度已变得愈来愈难以控制。
图1描绘基板100的示例性俯视剖面视图，所述基板100具有图案化的光刻胶层104，所述光刻胶层104配置在待蚀刻的目标材料102上。在图案化的光刻胶层104之间界定开口106，从而易于曝光下伏的蚀刻用的目标材料102从而将特征结构转移至目标材料102上。然而，光刻曝光工艺的不准确控制或低分辨率可能造成不良的光刻胶层104的临界尺寸，从而导致让人无法接受的线宽粗糙度（LWR）108。光刻胶层104的大线宽粗糙度（LWR）108可能导致不准确的特征结构转移到目标材料102，由此最终导致器件故障及产量损失。
因此，需要一种方法及设备以控制并尽量最小化线宽粗糙度（LWR），以便获得具有期望临界尺寸的图案化光刻胶层。
发明内容
本发明提供用于控制及改型光刻胶层的线宽粗糙度（LWR）的方法和设备。在一个实施例中，一种用于控制配置于基板上的光刻胶层的线宽粗糙度的设备包括：腔室主体，所述腔室主体具有界定内部处理区域的顶壁、侧壁和底壁；微波功率发生器，所述微波功率发生器通过波导件耦接至所述腔室主体；以及一个或多个线圈或磁体，所述线圈或磁体配置在所述腔室主体的外周边周围且邻接所述波导件；以及气体源，所述气体源通过气体递送通路耦接至所述波导件。
在另一个实施例中，一种用于控制配置于基板上的光刻胶层的线宽粗糙度的方法包括以下步骤：在处理腔室中产生电场，所述处理腔室具有基板，所述基板配置于所述处理腔室中，其中所述基板具有图案化的光刻胶层，所述图案化的光刻胶层配置在所述基板上；将气体混合物供应至配置在所述基板上的图案化的光刻胶层；在所述处理腔室中产生磁场以与所述电场相互作用，以在所述气体混合物中形成等离子体；以及以形成在所述处理腔室中的等离子体来修整所述图案化的光刻胶层的边缘轮廓。
在还有一个实施例中，一种用于控制配置于基板上的光刻胶层的线宽粗糙度的方法包括以下步骤：将气体混合物供应至处理腔室中，所述处理腔室具有基板，所述基板配置于所述处理腔室中，其中所述基板具有图案化的光刻胶层，所述图案化的光刻胶层配置在所述基板上；施加微波功率至所述处理腔室，以在所述处理腔室中产生电场；施加DC或AC功率至一个或多个线圈或磁体以产生磁场，所述线圈或磁体配置在所述处理腔室的外周边周围；通过磁场与电场的相互作用，在气体混合物中形成等离子体；以及使用形成在所述处理腔室中的等离子体来修整所述图案化的光刻胶层的边缘轮廓。
附图说明
通过参考附图中所说明的本发明的实施例，可以达到上述所记载的本发明的特征且可详细理解所述特征的方式对如上所简要概括的本发明作更具体的描述。
图1描绘本领域中传统上配置在基板上的图案化的光刻胶层的示例性结构的俯视图；
图2描绘根据本发明的一个实施例所用的电子回旋共振（ECR）等离子体反应器的示意性剖面视图；
图3描绘根据本发明一个实施例的电子轨道图；
图4描绘根据本发明一个实施例在基板上执行ECR等离子体工艺的工艺流程图；
图5描绘根据本发明一个实施例的邻近光刻胶层行进的电子轨道俯视图；以及
图6描绘根据本发明一个实施例的配置于基板上的光刻胶层的线宽粗糙度的分布。
为了便于理解，尽可能地使用相同标号来标明各附图中所共有的相同元件。预期一个实施例的元件与特征可有利地结合于其它实施例中而无需进一步叙述。
然而应注意，附图仅说明本发明的示例性实施例，且因此不应将所述附图视为限制本发明的范围，因为本发明可允许其它等效实施例。
具体实施方式
本发明的实施例包括用于控制配置在基板上的光刻胶层的线宽粗糙度（LWR）的方法和设备。在曝光/显影工艺之后通过在光刻胶层上执行电子回旋共振（ECR）等离子体工艺，可控制光刻胶层的线宽粗糙度（LWR）。执行电子回旋共振（ECR）等离子体工艺以提供纳米等级的化学与电子研磨（grinding）工艺，以使光刻胶层图案的边缘平滑，从而为光刻胶层的平滑图案边缘提供最小的图案边缘粗糙度以用于后续的蚀刻工艺。
图2描绘根据本发明的电子回旋共振（ECR）等离子体反应器200的一个实施例的示意性剖面图，所述反应器200适合用于执行电子回旋共振（ECR）等离子体工艺。一种这样的适合用于执行本发明的蚀刻反应器可购自美国加州Santa Clara的应用材料公司。预期在此也可应用其它适合的等离子体处理腔室，所述腔室包括购自其它制造商的腔室。
等离子体反应器200包括处理腔室252，所述处理腔室252具有腔室主体210。所述处理腔室252是高真空容器，且具有耦接至所述容器的真空泵228。处理腔室252的腔室主体210包括顶壁222、侧壁224和底壁226，所述壁在所述腔室主体中界定内部处理区域212。侧壁224的温度通过使用含液体的导管（图中未示出）来控制，所述导管位于侧壁224中及/或侧壁224周围。底壁226连接至电接地端230。
处理腔室252包括支撑底座214。所述支撑底座214延伸通过所述处理腔室252的底壁226进入处理区域212。支撑底座214可接收基板250以使所述基板250配置于所述支撑底座214上以供处理。支撑底座214通过匹配网络216耦接至射频（RF）偏压功率源218而至电接地端232。偏压功率源218大体上能够产生RF信号，所述RF信号具有约50kHz至约60MHz的可调频率及约0至5000瓦的偏压功率。偏压功率源218可视情况为DC或脉冲式DC源。
微波功率发生器202通过波导件220将功率耦合至处理腔室252的处理区域212。可在微波功率发生器202与波导件220之间配置介电窗204。在一个实施例中，介电窗204可由石英玻璃、陶瓷材料或类似物所制造。
一个或多个线圈段或磁体208（图中显示为208A与208B）配置在处理腔室252的外周边周围。提供给（一个或多个）线圈段或磁体208的功率由DC功率源或低频AC功率源（图中未示出）控制。线圈段或磁体208大体上以对称图案间隔开，并且以交替磁极的方式排列（即，交替的北极“N”与南极“S”）。配置在处理腔室252周边周围的线圈段或磁体208将倾向将所产生的等离子体“推”向内部处理区域212中的圆形区域的中间。线圈段或磁体208产生位于垂直于电场方向上的磁场，其中微波被导入所述处理腔室252。线圈段或磁体208可包含永磁体、电磁体或其它类似装置，这些装置能够产生磁场并且塑形内部处理区域212中所产生的场。气体源206可耦接至波导件220以将处理气体递送到处理腔室252中。磁场使电子沿磁场线248盘旋行进（orbit），同时微波功率在电子盘旋行进时赋予电子能量。磁场与电场之间的相互作用使由气体源206供应的气体解离并且形成电子回旋共振（ECR）等离子体。ECR等离子体可包括磁场、自由电荷（诸如电子与离子）、自由基或中性原子，所述等离子体可旋转（spin）并且朝基板表面250移动。与来自气体混合物的解离的离子或电荷结合的旋转电子可以环绕模式（circular mode）沿磁场线248朝基板表面加速，以便研磨基板表面上形成的结构。首先参考图3，图3描绘磁场中的电子轨道302。因磁场可能使电子在内部处理区域212中沿磁力线304旋转及盘旋（whirl），所述电子可以环绕运动302朝基板表面移动。
往回参考图2，可沿处理腔室252的轴线纵向移动线圈段或磁体208，以调整内部处理区域212中产生的磁场的最大点的轴向位置。也可使用其它能够产生充分磁场强度以促进形成ECR等离子体的磁场源。
基板处理期间，腔室252内部内的气体压力可被控制在预定范围中。在一个实施例中，腔室252的内部处理区域212内的气体压力维持在约0.1至999毫托。可将基板250维持在介于约10摄氏度至约500摄氏度之间的温度。
控制器240包括中央处理单元（CPU）244、存储器242以及支持电路246，所述控制器240耦接至反应器202的各部件以便于控制本发明的工艺。存储器242可为任何计算机可读介质，诸如随机存取存储器（RAM）、只读存储器（ROM）、软盘、硬盘或任何其它形式的在反应器202或CPU244本地端或远程的数字存储器。支持电路246耦接至CPU244以用传统方式支持CPU244。这些电路包括高速缓冲存储器、功率源、时钟电路、输入/输出电路及次系统与类似物。当存储在存储器242中的软件例程或一系列程序指令由CPU244执行时会使反应器200执行本发明的等离子体工艺。
图2仅显示可用于实行本发明的各类等离子体反应器的一个示例性配置。例如，可使用不同的耦合机制将不同种类的微波功率、磁功率和偏压功率耦合到等离子体腔室中。在一些应用中，可在与基板所处的腔室不同的腔室（例如远程等离子体源）中产生不同种类的等离子体，而接着使用本领域中已知的技术使所述等离子体被引导进入所述腔室。
图4示出根据本发明一个实施例的执行光刻胶线宽粗糙度（LWR）控制工艺400的一个实施例的流程图。工艺400可存储在存储器242中作为指令，所述指令由控制器240执行以使在ECR等离子体处理腔室中执行工艺400，所述ECR等离子体处理腔室诸如图2中所绘的ECR等离子体反应器200或者其它适合的反应器。
工艺400在方块402以提供基板（诸如描绘于图2中的基板250）至处理腔室252以供处理而开始。基板250可具有待蚀刻的目标材料512，所述目标材料512配置于所述基板250上，如图5中所示。在一个实施例中，使用光刻胶线宽粗糙度（LWR）控制工艺400的待蚀刻目标材料512可以是介电层、金属层、陶瓷材料或其它适合的材料。在一个实施例中，待蚀刻的目标材料512可以是形成为半导体制造中所用的栅极结构或接触结构或层间介电结构（ILD）的介电材料。适合的介电材料的示例包括SiO2、SiON、SiN、SiC、SiOC、SiOCN、a-C或类似物。在另一个实施例中，待蚀刻的目标材料512可以是形成为金属间介电结构（IMD）或其它适合结构的金属材料。适合的金属层的示例包括Cu、Al、W、Ni、Cr或类似物。
在方块404，可以在基板250上执行光刻胶线宽粗糙度（LWR）控制工艺400以研磨、改型及修整光刻胶层514的边缘516，如图5中所示。通过在ECR处理腔室中在配置于基板250上的光刻胶层514上实施ECR等离子体工艺而执行光刻胶线宽粗糙度（LWR）控制工艺400。如前文所讨论地，在ECR等离子体工艺中激发的电子以环绕运动方式移动并加速。如图5中所描绘地，电子的环绕运动504可以平滑地研磨、碰撞及抛光掉（polish away）光刻胶层514的不均匀边缘516。可连续地执行所述工艺，直到达到光刻胶层514的期望程度的粗糙度（例如，笔直度，如虚线510所示）为止。通过良好地控制电子动量，光刻胶层514的不均匀表面以及来自边缘516的突出可以逐渐地被平坦化，从而有效地将光刻胶线宽粗糙度（LWR）控制在期望的最小范围内。电子动量、离子密度、离子质量或电荷浓度可由磁场与电场间的相互作用所产生的功率以及所供应的气体控制。在一个实施例中，通过调节供应以产生微波场与磁场的功率，可获得不同的电子动量或迁移率。
在方块406，在ECR等离子体工艺期间，可调节、研磨、改型、控制光刻胶层514的线宽粗糙度（LWR）。处理期间，可控制数个工艺参数以将光刻胶层514的线宽粗糙度维持在期望范围。在一个实施例中，可将约50瓦至约2000瓦间的微波功率供应至处理腔室。在处理腔室中产生的磁场可以被控制在约500G至约1000G之间。可使用介于约100瓦至约2000瓦之间的DC及/或AC功率以在处理腔室中产生磁场。可以将处理腔室的压力控制在约0.5毫托至约500毫托之间。可将处理气体供应至处理腔室中，以协助改型、修整及控制光刻胶层514的边缘粗糙度。因为为光刻胶层514所选择的材料经常是有机材料，所以可选择含氧气体作为被供应至处理腔室中的处理气体而有助于研磨及改型光刻胶层514的粗糙度和轮廓。适合的含氧气体的示例包括O2、N2O、NO2、O3、H2O、CO、CO2及类似物。也可同时或单独供应其它种类的处理气体进入处理腔室，以有助于改型光刻胶层514的粗糙度。适合的处理气体的示例包括N2、NH3、Cl2或惰性气体（诸如Ar或He）。可以约10sccm至约500sccm之间（例如，约100sccm至约200sccm之间）的流速将处理气体供应至处理腔室中。可在约30秒至约200秒之间执行所述工艺。在一个特别的实施例中，供应O2气体进入处理腔室作为处理气体，以与光刻胶层514反应，以便修整及改型配置在基板250上的光刻胶层514的线宽粗糙度（LWR）。
如前文所讨论地，在一个实施例中，通过调节供应以产生微波场与磁场的功率，可获得不同的电子动量或迁移率，从而提供不同的碰撞能量以改型或修整光刻胶层的边缘粗糙度。在期望有更高电子运动动量的实施例中，可供应更高的功率以产生微波场与磁场，从而提供更高的碰撞能量以修整和改型光刻胶层的粗糙度。相比之下，在期望有更低电子运动动量的实施例中，可供应更低的功率以产生微波场与磁场，从而提供更低的碰撞能量以正如所需地温和地平滑化及抛光光刻胶层的粗糙度而不蚀刻下伏层。
可持续地执行光刻胶线宽粗糙度（LWR）控制工艺400，直到达到期望的光刻胶层514的最小粗糙度为止。在一个实施例中，光刻胶层514的线宽粗糙度513可以被控制在低于约3.0nm的范围中，诸如介于约1.0nm与约1.5nm之间。可在到达终点发信号指示达到所期望的光刻胶层514的粗糙度之后，终止光刻胶线宽粗糙度（LWR）控制工艺400。或者，可通过预设时间模式终止光刻胶线宽粗糙度（LWR）控制工艺400。在一个实施例中，可在约100秒至约500秒之间执行光刻胶线宽粗糙度（LWR）控制工艺400。
图6描绘了已在上面执行光刻胶线宽粗糙度（LWR）控制工艺400的光刻胶层514的剖面视图的一个示例性实施例。在光刻胶线宽粗糙度（LWR）控制工艺400之后，获得平滑的边缘表面。光刻胶层514的粗糙度以一种方式被平滑化及被修整，所述方式将光刻胶层514的边缘粗糙度最小化并且使光刻胶层514的边缘形态平滑。在光刻胶层514中形成的平滑边缘表面在图案化的光刻胶层514中界定锐利且界定良好的开口604，以曝光下伏的目标材料512以供蚀刻，从而蚀刻精确且笔直的开口宽度606以待形成为掩模层。在一个实施例中，开口604的宽度606可被控制在约15nm至约35nm之间。
在一个实施例中，可通过一蚀刻工艺蚀刻下伏的目标材料512，所述蚀刻工艺在与用于执行线宽粗糙度（LWR）控制工艺相同的腔室（诸如，描绘于图2中的腔室200）中执行。在另一实施例中，可通过一蚀刻工艺蚀刻下伏的目标材料512，所述蚀刻工艺在集成在群集系统中的任何其它不同的适合的蚀刻腔室中执行，其中线宽粗糙度（LWR）处理腔室可并至所述群集系统中。在还有一个实施例中，可通过一蚀刻工艺蚀刻下伏的目标材料512，所述蚀刻工艺在任何其它不同的适合的蚀刻腔室中执行，所述蚀刻腔室包括独立（stand-alone）的腔室，所述独立的腔室与线宽粗糙度（LWR）处理腔室分开或与可将线宽粗糙度（LWR）处理腔室并入的群集系统分开。
在一个实施例中，用于执行线宽粗糙度（LWR）工艺的气体混合物配置成不同于用于蚀刻下伏目标材料512的气体混合物。在一个实施例中，用于执行线宽粗糙度（LWR）工艺的气体混合物包括含氧层（诸如O2），而用于蚀刻下伏目标材料512的气体混合物包括含卤素气体（诸如氟碳气体、含氯气体、含溴气体、含氟气体、及类似物）。
由此，本发明提供用于控制与改型光刻胶层的线宽粗糙度（LWR）的方法与设备。所述方法与设备可以有利地在EUV曝光工艺之后控制、改型和修整配置在基板上的光刻胶层的轮廓、线宽粗糙度和尺寸，从而提供准确的对光刻胶层中开口的临界尺寸的控制，因此后续的蚀刻工艺可拥有针对下伏层（所述下伏层通过开口而受到蚀刻）的准确的转移临界尺寸。
虽然前文所述的内容针对本发明的实施例，但可不背离本发明基本范围而设计本发明的其它与进一步的实施例，本发明的范围由下文中的权利要求书所决定。
Claims (15)
1.一种用于控制配置于基板上的光刻胶层的线宽粗糙度的设备，包括：
腔室主体，所述腔室主体具有界定内部处理区域的顶壁、侧壁和底壁；
微波功率发生器，所述微波功率发生器通过波导件耦接至所述腔室主体；以及
一个或多个线圈或磁体，所述线圈或磁体配置在所述腔室主体的外周边周围且邻接所述波导件；以及
气体源，所述气体源通过气体递送通路耦接至所述波导件。
2.如权利要求1所述的设备，其特征在于，所述设备进一步包含：
基板支撑组件，所述基板支撑组件配置在所述腔室主体中延伸通过所述腔室主体的所述底壁。
3.如权利要求2所述的设备，其特征在于，所述设备进一步包含：
RF偏压功率，所述RF偏压功率耦接至所述基板支撑组件。
4.如权利要求1所述的设备，其特征在于，所述设备进一步包含：
介电窗，所述介电窗配置在所述微波功率发生器与所述波导件之间。
5.如权利要求1所述的设备，其特征在于，所述线圈或磁体是永磁体或电磁体。
6.如权利要求1所述的设备，其其特征在于，所述处理腔室耦接接地端。
7.如权利要求3所述的设备，其特征在于，耦接至所述基板支撑组件的所述RF偏压功率耦接接地端。
8.一种用于控制配置于基板上的光刻胶层的线宽粗糙度的方法，包括以下步骤：
在处理腔室中产生电场，所述处理腔室具有基板，所述基板配置于所述处理腔室中，其中所述基板具有图案化的光刻胶层，所述图案化的光刻胶层配置在所述基板上；
将气体混合物供应至配置在所述基板上的所述图案化的光刻胶层；
在所述处理腔室中产生磁场以与所述电场相互作用，从而在所述气体混合物中形成等离子体；以及
以形成在所述处理腔室中的所述等离子体修整所述图案化的光刻胶层的边缘轮廓。
9.如权利要求8所述的方法，其特征在于，产生所述电场进一步包含以下步骤：
施加微波功率至所述处理腔室以产生所述电场。
10.如权利要求8所述的方法，其特征在于，产生所述磁场进一步包含以下步骤：
施加DC或AC功率至一个或多个线圈或磁体以产生所述磁场，所述线圈或磁体配置在所述处理腔室的所述外周边周围。
11.如权利要求10所述的方法，其特征在于，所述线圈或磁体是永磁体或电磁体。
12.如权利要求8所述的方法，其特征在于，供应所述气体混合物进一步包含以下步骤：
将含氧气体供应至所述处理腔室中。
13.如权利要求12所述的方法，其特征在于，所述含氧气体是O2。
14.如权利要求8所述的方法，其特征在于，修整所述图案化的光刻胶层的所述边缘轮廓进一步包含以下步骤：
调节在所述处理腔室中所产生的所述磁场与所述电场之间的所述相互作用。
15.如权利要求14所述的方法，其特征在于，调节所述相互作用进一步包含以下步骤：
控制所述光刻胶层的所述边缘轮廓，使所述边缘轮廓具有低于约3.0nm的线宽粗糙度。
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| CN106249554B (zh) * | 2015-06-08 | 2021-04-02 | 应用材料公司 | 浸没场引导的曝光和曝光后烘烤工艺 |
| CN108550520A (zh) * | 2018-04-27 | 2018-09-18 | 武汉新芯集成电路制造有限公司 | 一种改善存储区浅槽线平整度的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201241873A (en) | 2012-10-16 |
| WO2012057967A3 (en) | 2012-06-21 |
| US20120103939A1 (en) | 2012-05-03 |
| JP2013542613A (ja) | 2013-11-21 |
| KR20130141550A (ko) | 2013-12-26 |
| US9039910B2 (en) | 2015-05-26 |
| WO2012057967A2 (en) | 2012-05-03 |
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