KR20210117157A - 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 - Google Patents

타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 Download PDF

Info

Publication number
KR20210117157A
KR20210117157A KR1020210027117A KR20210027117A KR20210117157A KR 20210117157 A KR20210117157 A KR 20210117157A KR 1020210027117 A KR1020210027117 A KR 1020210027117A KR 20210027117 A KR20210027117 A KR 20210027117A KR 20210117157 A KR20210117157 A KR 20210117157A
Authority
KR
South Korea
Prior art keywords
dielectric layer
film
etch
sin
profile
Prior art date
Application number
KR1020210027117A
Other languages
English (en)
Inventor
에이이치로 시바
요시노리 오타
레네 헨리쿠스 요제프 베르부르트
노부요시 코바야시
아키코 코바야시
Original Assignee
에이에스엠 아이피 홀딩 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠 아이피 홀딩 비.브이. filed Critical 에이에스엠 아이피 홀딩 비.브이.
Publication of KR20210117157A publication Critical patent/KR20210117157A/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H01L21/31122—Etching inorganic layers by chemical means by dry-etching of layers not containing Si, e.g. PZT, Al2O3
    • H01L27/115—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/50—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the boundary region between the core region and the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/50—EEPROM devices comprising charge-trapping gate insulators characterised by the boundary region between the core and peripheral circuit regions

Abstract

측면 및 횡방향 면을 갖는 단차에 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법은, (a) 제1 증착 조건 하에서 상기 기판의 미리 선택된 영역 상에 유전체 층을 증착하는 공정(상기 유전체 층은, 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 대한 저항성이 조정된 부분을 가짐); 및 (b) 공정 (a)에서 수득된 유전체 층을 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 노출시킴으로써 상기 유전체 층의 일부분의 적어도 일부를 제거하고, 이에 의해 상기 기판 상에 상기 타겟 토폴로지 프로파일을 갖는 층 구조를 형성하는 공정을 포함한다.

Description

타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법{Method for Fabricating Layer Structure Having Target Topological Profile}
본 출원은, 일반적으로 기판 상에 형성된 단차에 유전체 막으로 구성된 층 구조를 제조하기 위한 방법에 관한 것이다.
금속 산화물, 질화물 또는 탄화물로 구성된 막과 같은 막의 식각의 경우에 플라즈마 식각이 종종 사용되는데, 그 이유는 식각 속도가 일반적으로 높기(10~100 nm/s) 때문이고, 상기 식각은 이온의 존재로 인해 일반적으로 이방성이다. 이온의 존재는, 재료 간의 식각 선택도를 상대적으로 불량하게 한다. 반면에, 습식 식각은 전형적으로 등방성이고, 종종 식각 선택도를 증가시키지만 웨이퍼 대 웨이퍼 재현성 및/또는 균일성뿐만 아니라 처리량을 감소시킬 수 있다. 또한, 습식 식각은 다량의 화학 폐기물을 생성하므로, 종종 안전 및 환경 문제와 연관이 있어서 문제를 제기한다.
충분한 식각 선택도로 균일한 식각을 달성하기 위해, 라디칼 기반 식각을 효과적으로 사용할 수 있다. 이는, 양호한 선택도를 갖는 건식 식각과 등방성 특성을 갖는 습식 식각의 조합된 이점을 줄 수 있다. 그러나, 이들의 실제 응용예의 경우에, 특정 토폴로지 프로파일을 갖는 원하는 구조를 생성하기 위해, 인접 층에 대해 상이한 재료를 사용할 시 특정 패터닝 계획 및 특정 식각 선택도를 추가로 조사할 필요가 있을 것이다. 라디칼 식각 기술은 미국 특허 제9,064,815호 및 미국 특허 제9,275,834호에 개시된 것과 같이 당업계에 공지되어 있지만, 원하는 토폴로지 프로파일을 갖는 막을 형성하기 위해서는 특히 추가적인 개선이 요구될 것이다.
특히, 습식 식각 화학물질을 사용하는, SiN 막의 선택적 식각은, 반도체 소자의 제조에 널리 사용되어 왔다. 예를 들어, 3D-NAND 소자의 메모리 셀을 제조하기 위해 SiN/SiO2 스택 층의 구조에서 뜨거운(>100°C) 인산 수용액에 의해 SiN 막이 선택적으로 식각된다. 그러나, 식각 속도는 화학 농도, 온도, 및 침지 지속 시간과 같은 여러 파라미터에 따라 달라진다. 또한, 나노미터 수준의 식각 속도에 대한 정밀한 제어는 어렵고, 습식 세정 공정 후에 건조 공정이 필요하기 때문에 공정 처리량은 비교적 낮다. 또한, 습식 식각 화학물질 폐기물은 때때로 건강에 해로우며, 안전 및 환경 문제를 위해 특별히 단단한 습식 세척 수조가 필요하다.
한편, SF6 또는 NF3 플라즈마를 사용하는 건식 식각이 공지되어 있고, 일반적으로 SiN 막 코팅의 측면 잔류 토폴로지 프로파일에 사용된다. 이온의 존재로 인해, 건식 식각은 일반적으로 방향성이며, 이는 이온에 노출된 표면(전형적으로 수평 표면)의 식각 속도를 증가시킨다. 이온의 존재는 종종 등각성 식각 또는 상부 잔류 식각을 달성하는 것을 어렵게 한다. 이러한 이유로, 일부 경우에서 습식 식각은 건식 식각보다 일반적으로 더 자주 사용된다. 미국 특허 제20170345674A1호(NF3/O2를 이용한 건식 식각), 미국 특허 제20180204733A1호(SF6을 이용한 건식 식각), 및 미국 특허 제20120289056A1호(인산을 이용한 습식 식각)를 참조한다.
습식 식각은 일반적으로 미국 특허 제9,754,779B1호에 개시된 방식으로 수행될 수 있으며, 여기서 SiN 막은 제어된 조건 하에서 패터닝된 표면 상에 증착되고, 이어서 이를 dHF 용액을 사용하여 습식 식각함으로써, 측벽 잔류 토폴로지 프로파일 또는 상부/하부 잔류 토폴로지 프로파일 중 하나를 SiN 막 내에 제공한다. 이러한 기술은 화학 물질에 대한 SiN 막의 습식 식각 특성을 이용하며, 여기서 SiN 막의 내화학성은 그의 수평 표면부와 그의 수직 표면부 사이에서 상이하다. 그러나, 개시된 방법에서 패터닝된 구조의 측벽 상에 SiN 막의 일부분을 남기거나 패터닝된 구조의 표면의 상부/하부 상에 SiN 막의 일부분을 남기기 위해서, 자연적으로 상이한 공정인 증착 공정 및 습식 식각 공정은 상이한 처리 챔버에서 각각 수행되어, 고 비용, 저 처리량, 큰 설치 면적, 및 기타 문제를 야기한다.
전술한 바와 같이, 종래 기술과 연관된 문제 및 해결책에 대한 임의의 논의는 단지 본 발명에 대한 맥락을 제공하기 위해서만 본 개시에 포함되었고, 그 논의의 일부 또는 전부가 본 발명이 이루어지거나 본 출원이 출원된 당시에 알려졌다는 것을 인정하는 것으로 받아들여져서는 아니됨을 알아야 한다.
전술한 바를 고려하여, 일부 구현예는 측면 및 횡방향 면을 갖는 단차로 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법을 제공하며, 상기 방법은, (a) 제1 증착 조건 하에서 상기 기판의 미리 선택된 영역 상에 유전체 층을 증착하는 공정(상기 유전체 층은, 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 대한 저항성이 조정된 부분을 가짐); 및 (b) 공정 (a)에서 수득된 유전체 층을 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 노출시킴으로써 상기 유전체 층의 일부분의 적어도 일부를 제거하고, 이에 의해 상기 기판 상에 상기 타겟 토폴로지 프로파일을 갖는 층 구조를 형성하는 공정을 포함한다. 상기 타겟 토폴로지 프로파일은 일반적으로 측면 잔류 토폴로지 프로파일, 횡방향 면 잔류 토폴로지 프로파일, 또는 등각성 토폴로지 프로파일일 수 있다.
일부 구현예에서, 상기 방법은, 공정 (a) 이전에, (i) 기준 증착 조건 및 기준 건식 식각 조건을 제공하는 단계(상기 조건 하에서 공정 (a) 및 공정 (b)를 수행함으로써, 기준 토폴로지 프로파일을 갖는 층 구조가 상기 기판 상의 단차에 형성됨); (ii) 이렇게 수득된 기준 토폴로지 프로파일을 타겟 토폴로지 프로파일과 비교할 시, 상기 기판 상의 단차에서 토폴로지 프로파일을 갖는 층 구조를 형성하는 방식으로, 상기 기준 증착 조건 중 적어도 하나의 파라미터 및/또는 상기 기준 건식 식각 조건 중 적어도 하나의 파라미터를 변경하는 단계(상기 토폴로지 프로파일은 상기 기준 토폴로지 프로파일보다 상기 타겟 토폴로지 프로파일에 보다 유사함); (iii) 상기 변경된 증착/건식 식각 조건 하에서 공정 (a) 및 공정 (b)를 수행하는 단계; 및 (iv) 이렇게 수득된 토폴로지 프로파일이 타겟 토폴로지 프로파일과 실질적으로 동등해질 때까지 선택적으로 (ii) 및 (iii) 단계를 반복하는 단계를 추가로 포함한다. 단계 (i) 내지 (iv)를 수행하는 것이 바람직하며, 상기 제1 유전체 층의 내화학성을 참조하여 상기 제2 유전체 층의 내화학성을 적절히 조정하기 위한 제1 증착 조건과 제1 건식 식각 조건을 효율적으로 결정할 수 있게 한다. 그러나, 단계 (i) 및 (iv)의 수행은 공정 (a) 및 (b)를 수행하는 데 특별히 필수적인 것은 아닌데, 그 이유는, "식각 선택도"의 원리가 당업계에 공지되어 있기 때문이고(예, 습식 식각에서의 막의 식각 선택도), 당업자는, 특히 본 개시의 관점에서, 과도한 부담 없이 공정 (a) 및 (b)를 수행하는 데 필요한 조건 및 구조를 결정할 수 있다.
다양한 구현예 중, 제1 예시적인 구현예는, 유전체 층이 상기 기판 상에 증착된 제1 유전체 층, 및 상기 제1 유전체 층 상에 증착되고 이와 접촉하는 제2 유전체 층으로 구성되는 방법을 포함하고, 상기 제2 유전체 층은 상기 제1 유전체 층에 대해 상기 제2 유전체층의 식각 선택도가 적어도 5(예, 적어도 10, 50, 100, 500, 또는 1,000)인 방식으로 불소 및/또는 염소 라디칼에 대해 조정된 저항성을 갖고, 상기 식각 선택도는 상기 제1 건식 식각 조건 하에서 상기 제1 유전체 층의 식각 속도에 대한 상기 제2 유전체 층의 식각 속도의 비율로 정의된다.
상기 방법의 일부 구현예에서, 상기 제1 유전체 층은 산화물 막으로 구성되고, 제2 유전체 층은 실리콘 질화물로 구성된다. 상기 방법의 일부 구현예에서, 제1 유전체 층 및 제2 유전체 층은 동일한 유형이고, 여기서 제1 및 제2 유전체 층을 구성하는 일차 화학적 결합은 동일하다.
제2 예시적인 구현예는, 측면 상에 증착된 유전체 층의 제1 부분, 및 횡방향 면 상에 증착된 유전체 층의 제2 부분이, 제1 및 제2 부분 중 하나의 식각 선택도가 상기 제1 건식 식각 조건 하에서 상기 제1 및 제2 부분 중 다른 것의 식각 속도보다 낮은 식각 속도를 갖고 적어도 1.5(예, 적어도 1.7, 2.0, 2.5, 또는 3.0)인 방식으로, 불소 및/또는 염소에 대해 상이한 저항성을 갖는 방법을 포함하며, 상기 제1 및 제2 부분 중 하나의 식각 선택도는 상기 제1 건식 식각 조건 하에서 상기 제1 및 제2 부분 중 하나의 식각 속도에 대해 상기 제1 및 제2 부분 중 다른 하나의 식각 속도의 비율로 정의된다. 제1 예시적인 구현예에서, 상기 유전체 층은, 상이한 건식 식각 선택도를 갖고 적층된 제1 및 제2 유전체 층으로 구성되는 반면에, 제2 예시적인 구현예에서, 상기 유전체 층은, 상이한 건식 식각 선택도를 갖는 제1 부분(측면 부분) 및 제2 부분(횡방향 부분)으로 구성된다. 그러나, 이들 구현예는 임의의 조합으로 실시될 수 있다.
제3 예시적인 구현예는, 측면 상에 증착된 유전체 층의 일부 및 횡방향 면 상에 증착된 유전체 층의 일부가 상이한 두께를 갖는 방법을 포함한다. 제1 및 제2 예시적인 구현예가, 최종 층 구조의 타겟 토폴로지 프로파일을 달성하기 위해 식각 선택도의 차이를 사용하지만, 제3 예시적인 구현예는 식각 선택도의 차이를 요구하지 않고 최종 층 구조의 타겟 토폴로지 프로파일을 달성할 수 있다. 그러나, 제3 예시적인 구현예는 제1 및/또는 제2 예시적인 구현예(들)와 임의의 조합으로 실시될 수 있다.
제4 예시적인 구현예는 공정 (a) 및 공정 (b)가 동일한 챔버 내에서 수행되는 방법을 포함한다. 상기 방법의 일부 구현예에서, 불소 및/또는 염소 라디칼은 불소 및 질소를 함유하는 가스 및 귀가스로부터, 원격식으로 또는 동일한 챔버 내에서 생성된 불소 라디칼이다. 이러한 예시적인 구현예는 임의의 하나 이상의 개시된 구현예와 조합하여 수행될 수 있다.
관련 기술을 넘어 달성된 본 발명의 양태 및 이점을 요약하기 위한 목적으로, 본 발명의 특정 목적 및 이점이 본 개시에서 설명된다. 물론, 이러한 모든 목적 및 이점이 본 발명의 임의의 특정 구현예에 따라 반드시 달성되는 것이 아니라는 것을 이해하여야 한다. 따라서, 예를 들면 당업자는 본 발명이 본원에 교시 또는 제시될 수 있는 다른 목적 또는 이점을 반드시 달성하지 않고, 본원에 교시된 바와 같은 하나의 이점 또는 여러 이점들을 달성하거나 최적화하는 방식으로 구현되거나 수행될 수 있다는 것을 인식할 것이다.
본 발명의 추가 양태, 특징, 및 이점은 다음의 상세한 설명으로부터 명백해질 것이다.
본 발명의 이들 특징 및 다른 특징은 이제 바람직한 구현예의 도면을 참조하여 설명될 것이고, 이는 예시를 위한 것이며 본 발명을 제한하기 위한 것은 아니다. 도면은 예시의 목적으로 매우 간략화되어 있으며, 축척에 반드시 비례하지는 않는다.
특허 또는 출원 파일은 컬러로 출력된 적어도 하나의 도면을 포함한다. 컬러 도면(들)을 갖는 본 특허 또는 특허 출원 공개의 사본은, 요청 및 필요한 수수료 결제시, 사무국에 의해 제공될 것이다.
도 1은, 예시로서 NF3 원격식 플라즈마 노출 시간과 관련하여 상이한 SiN 막의 식각 두께를 보여주는 그래프이다.
도 2는, 예시로서 HF 습식 식각 노출 시간과 관련하여 상이한 SiN 막의 식각 두께를 보여주는 그래프이다.
도 3은, 예시로서 막 SiN:1의 식각 두께와 비교하여(참조하여) NF3 원격식 플라즈마 식각에서 상이한 SiN 막의 식각 선택도를 보여주는 그래프이다.
도 4a는 상이한 막의 굴절 지수에 대한 막 SiN:1의 식각 속도와 비교하여(참조하여) NF3 원격식 플라즈마 식각에 의한 상이한 SiN 막의 식각 속도를 예시로서 보여주는 그래프이다.
도 4b는 상이한 막의 굴절 지수에 대한 막 SiN:1의 식각 속도와 비교하여(참조하여) HF 습식 식각에 의한 상이한 SiN 막의 식각 속도를 예시로서 보여주는 그래프이다.
도 5는 상이한 SiN 막의 푸리에 변환 적외선(FTIR) 스펙트럼(색상)을 예시로서 나타낸다.
도 6은, 예시로서 SiN 막의 식각 속도 및 Si-N 피크 면적 크기 간의 관계를 보여주는 그래프이다.
도 7은 불소 라디칼을 사용하는 3DNAND 제작에서의 단순화되고 개략적인 공정 시퀀스((a)→(b)→(c)→(d)→(e)→(f))를 예시로서 나타낸다.
도 8a는 불소 라디칼을 사용하여 "계단" 상에 3DNAND를 제작함에 있어서 단순화되고 개략적인 공정 시퀀스((a)→(b)→(c)→(d))를 예시로서 나타낸다.
도 8b는 도 8a의 공정 시퀀스를 사용하여 제조된 최종 구조를 예시로서 나타낸다.
도 9는 불소 라디칼을 사용하여 스페이서 한정 이중 패터링(SDDP) 또는 측벽 스페이서를 형성함에 있어서 개략적이고 단순화된 공정 시퀀스((a)→(b)→(c)→(d))를 예시로서 나타낸다.
도 10은 진공을 파괴하지 않고 클러스터 툴에서 증착과 식각을 조합한 연속 공정 계획을 단순화하여 예시로서 나타낸다.
도 11a는, 예시로서 원격식 플라즈마 공급원이 메인 공정 챔버에 포함된, 원격식 플라즈마 처리 장치의 단순화된 구성을 개략적으로 나타낸다.
도 11b는, 예시로서 원격식 플라즈마가 원격으로 생성되고 반응성 종이 반응 챔버 내로 공급되는 원격식 플라즈마 처리 장치의 단순화된 구성을 개략적으로 보여준다.
도 12a는, 예시로서 상부/하부 제거 계획에 따라 불소 라디칼 식각 후 패터닝된 구조 상에 형성된 실리콘 질화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다.
도 12b는, 예시로서 측면 제거 계획에 따라 불소 라디칼 식각 후 패터닝된 구조 상에 형성된 실리콘 질화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다.
도 13은, 예시로서 원격식 플라즈마 노출되는 경우에 상이한 산화물 막의 식각 두께를 보여주는 그래프이다.
도 14는, 증착용 RF 플라즈마 공급원 및 건식 식각용 MW 플라즈마 공급원을 갖춘 플라즈마 처리 장치의 개략적인 단순 구성을 예시로서 나타낸다.
도 15는, 예시로서 증착용 장치 및 습식 식각용 다른 장치를 사용하는 공정을 나타낸다.
도 16은, 예시로서 증착 및 건식 식각용 단일 장치를 사용하는 공정을 나타낸다.
도 17은, RF 플라즈마 공급원 및 원격식 플라즈마 공급원을 갖춘 플라즈마 처리 장치의 개략적인 단순 구성을 예시로서 나타낸다.
도 18a는, 예시로서 건식 식각 전("증착 상태")과 건식 식각 후("건식 식각 후")에 형성된 실리콘 질화물 막의 단면도의 주사 투과 전자 현미경(STEM) 사진을 나타낸다.
도 18b는, 도 18a에 나타낸 층 구조를 형성하기 위한 증착 조건 및 건식 식각 조건을 나타낸 표이다.
도 19는, 예시로서 원격식 플라즈마 노출되는 경우에 상이한 TiO 막의 식각 두께를 보여주는 그래프이다.
도 20은, 예시로서 상이한 막의 식각 두께를 보여주는 그래프이다.
도 21a는, 예시로서, 상부/하부 잔여 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 전에 패터닝된 구조 상에 형성된 티타늄 산화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다.
도 21b는, 예시로서, 상부/하부 잔류 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 후에 패터닝된 구조 상에 형성된 티타늄 산화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 용어 "상부/하부"는 "상부 및/또는 하부"를 지칭하며, 여기서 상단부 및 하단부와 연관된 토폴로지 프로파일은 트렌치의 종횡비에 따라 달라지며, 예를 들어 종횡비가 높을 경우에(예컨대 5 이상), 최종 층 구조는 오직 상부 잔류 토폴로지 프로파일을 가질 수 있다.
도 22a는, 예시로서, 등각성 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 전에 패터닝된 구조 상에 형성된 실리콘 산화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다.
도 22b는, 예시로서, 등각성 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 후에 패터닝된 구조 상에 형성된 티타늄 산화물 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다.
도 23은, 예시로서, (a) 진공을 파괴하지 않고 클러스터 툴에서 증착 및 식각을 조합하는 개략적이고 단순화된 연속 공정 계획, 및 (b) 동일한 반응기에서 증착 및 식각을 수행하는 개략적이고 단순화된 연속 공정 계획을 나타낸다.
본 개시에서, SiN은 실리콘 질화물 막으로서 특성화되거나 인식되는 막이고, 이는 산소, 탄소, 수소 등 및 실리콘 질화물 막의 특성을 실질적으로 변화시키지 않는 정도까지 불가피한 불순물을 포함하되, SiN 막은 프로세스 레시피에 따라 SiN 막만 아니라, SiNC 막, SiNO 막, SiNCO 막, 또는 기타를 포함하고, 이들 막 명칭은 당업계에서 일반적으로 인정되는 약어이며, 달리 기술되지 않는 한 비화학량론적 방식으로 단지 막 유형(단순히 일차 구성 원소에 의해 표시됨)을 나타낸다. 일부 구현예에서, SiN은 약 2 내지 10, 일반적으로 약 4 내지 8의 유전 상수를 갖는다. 유사하게, SiO 막은 실리콘 산화물 막으로서 특징지워지거나 인식되는 막이고, 이는 질소, 탄소, 수소 등과 같은 다른 원소 및 실리콘 산화물 막의 특성을 실질적으로 변화시키지 않는 한 불가피한 불순물을 포함할 수 있고, SiO 막은 SiO뿐만 아니라, SiOC 막, SiON 막, SiOCN 막 등을 포함한다.
본 개시에서, "단차"는, 기판 상에 형성된 상부 표면, 측벽, 및 하부 표면을 갖는 임의의 구조를 지칭하며, 이는 높이 방향으로 직렬로 배열될 수 있거나 단일 단차일 수 있고, 트렌치, 비아, 또는 다른 오목부를 구성할 수 있다.
일부 구현예에서, 트렌치는 10 내지 50 nm(전형적으로는 15 내지 30 nm)의 폭(여기서 상기 트렌치가 상기 폭과 실질적으로 동일한 길이를 갖는 경우, 상기 트렌치는 홀/비아로 지칭되고, 그의 직경은 10 내지 50 nm임), 30 내지 200 nm(전형적으로 50 내지 150 nm)의 깊이, 및 3 내지 20(전형적으로 3 내지 10)의 종횡비를 갖는다.
본 개시에서, "가스"는 증기화된 고체 및/또는 액체를 포함할 수 있으며, 단일 가스 또는 가스 혼합물로 구성될 수 있다. 본 개시에서, 샤워 헤드를 통해 반응 챔버로 유입되는 공정 가스는 전구체 가스 및 첨가 가스로 구성되거나, 본질적으로 이루어지거나, 또는 이루어질 수 있다. 전구체 가스 및 첨가 가스는 보통 혼합 가스로서 또는 개별적으로 반응 공간에 유입된다. 전구체 가스는 귀가스와 같은 캐리어 가스와 함께 유입될 수 있다. 첨가 가스는 반응 가스 및 희석 가스, 예컨대 귀가스로 구성되거나, 본질적으로 이루어지거나, 이루어질 수 있다. 반응 가스 및 희석 가스는 혼합된 가스로서 또는 개별적으로 반응 공간에 유입될 수 있다. 전구체는 둘 이상의 전구체로 구성될 수 있고, 반응 가스는 둘 이상의 반응 가스로 구성될 수 있다. 전구체는 기판 상에 화학 흡착되는 가스이고, 유전체 막의 주 구조체를 구성하는 준금속 또는 금속 원소를 일반적으로 함유하는 가스이고, 증착을 위한 반응 가스는, 가스가 여기되어 기판 상에 원자층 또는 단층을 고정시킬 때 기판 상에 화학 흡착되는 전구체와 반응하는 가스이다. "화학 흡착"은 화학적 포화 흡착을 지칭한다. 공정 가스 이외의 가스, 즉 샤워 헤드를 통과하지 않고 유입되는 가스는, 예를 들면 반응 공간을 밀봉하기 위해 사용될 수 있고, 귀가스와 같은 밀봉 가스를 포함한다. 일부 구현예에서, "막"은 실질적으로 핀홀 없이 두께 방향에 수직한 방향으로 연속적으로 연장되어 전체 타켓 또는 관심 표면을 커버하는 층, 또는 단순히 타켓 또는 관심 표면을 커버하는 층을 지칭한다. 일부 구현예에서, "층"은 표면에 형성된 특정 두께를 갖는 구조물을 지칭하거나, 막 또는 막이 아닌 구조물의 동의어를 지칭한다. 막 또는 층은 특정 특성을 갖는 별개의 단일막 또는 층, 또는 다수의 막 또는 층으로 구성될 수 있고, 인접하는 막 또는 층 사이의 경계는 명확하거나 그렇지 않을 수 있으며, 물리적, 화학적, 및/또는 임의의 특성, 형성 공정 및 시퀀스, 및/또는 인접하는 막 또는 층의 기능 또는 목적에 기반하여 구축될 수 있다.
본 개시에서, "어닐링"은 재료를 처리하는 중에 재료가 안정한 형태, 예컨대 성분에 존재하는 말단기(예컨대, 알코올기와 히드록시기)가 더욱 안정한 기(예컨대, Si-Me기)로 치환되고/되거나 더욱 안정한 형태(예컨대, Si-O 결합)를 형성함으로써 막을 조밀화시키는 공정을 지칭한다.
또한, 본 개시에서, "일" 또는 "하나"는 달리 특정되지 않으면, 다수의 종을 포함하는 종 또는 속을 지칭한다. 용어 "의해 구성되는" 및 "갖는"은 일부 구현예에서 "통상적으로 또는 대략적으로 포함하는", "포함하는", "본질적으로 이루어지는", 또는 "~로 이루어지는"을 독립적으로 지칭한다. 또한, 본 개시에서, 임의의 정의된 의미는 일부 구현예에서 반드시 보통의 그리고 관습적인 의미를 배제하는 것은 아니다.
또한, 본 개시에서, 실행 가능한 범위는 일상적인 작업에 기초하여 결정될 수 있으므로 변수의 임의의 두 수치가 변수들의 실행 가능한 범위를 구성할 수 있고, 지시된 임의의 범위는 끝점을 포함하거나 배제할 수 있다. 추가적으로, 표시된 변수의 임의의 값은 ("약"의 표시 여부에 관계없이) 정확한 값 또는 대략적인 값을 지칭할 수 있고 등가를 포함할 수 있으며, 일부 구현예에서는 평균, 중간, 대표, 다수 등을 지칭할 수 있다.
조건 및/또는 구조가 명시되지 않은 본 개시에서, 당업자는 일상적인 실험에 따라 본 개시의 관점으로 이와 같은 조건 및/또는 구조를 용이하게 제공할 수 있다. 개시된 모든 구현예에서, 하나의 구현예에 사용된 임의의 요소는 이와 균등한 임의의 요소로 대체될 수 있으며, 의도된 목적을 위해, 본원에 명시적으로, 필연적으로, 또는 내재적으로 개시된 것들을 포함한다. 또한, 본 발명은 장치 및 방법에 동일하게 적용될 수 있다.
구현예는 바람직한 구현예에 대해 설명될 것이다. 그러나, 본 발명은 바람직한 구현예에 제한되지 않는다.
일부 구현예는 불소 라디칼을 사용하여 등각성 식각을 수행하기 위해, 또는 상부 또는 측면 잔류 구조를 생성하기 위해 상이한 금속 함유 재료의 건식 식각을 포함한다. 상이한 금속 화합물 간의 식각 선택도의 차이는, 기판 온도 및 생성된 반응 생성물의 휘발성에 따라 발현되고 달라진다. 따라서, 식각 선택도는 기판 온도 및 반응 화학물질의 적절한 선택에 의해 조정될 수 있다. 본 개시에서, 용어 "금속"은 문맥에 따라 실리콘과 같은 준금속 원소를 포함할 수 있다. 또한, 본 개시에서, 상기 문맥에서 용어 "재료"는 막이 구성되는 원소, 성분, 또는 물질을 지칭하며, 여기서 상이한 재료는 원소적으로 상이한 재료, 원소적으로 동일하지만 조성적으로 상이한 재료, 및 원소적으로 동일하고 조성적으로 동일하지만 상이한 물리적 및/또는 화학적 특성을 갖는 재료를 포함할 수 있다.
상부 및/또는 측면 잔류 구조는 (1) 재료의 증착 조건을 변경한 다음 건식 식각을 거침으로써 생성될 수 있다. 일부 구현예에서, 달성될 수 있는 식각 속도는 0.1 내지 1 nm/s의 범위이며, 양호한 처리량을 유지하면서 식각의 양호한 제어를 가능하게 한다. (2) 건식 식각 조건을 변경하는 것은, 또한 (1)과 조합하여 또는 (1)에 대한 대안으로서 수행될 수 있다. 제안된 건식 식각 공정 흐름은, 또한 동일한 챔버 또는 (다수의 챔버를 갖는) 동일한 클러스터 툴에서 증착 및 식각을 모두 수행하여 측면 또는 상부/하부 잔류 패터닝된 막을 생성하는 것을 가능하게 할 수 있다. 이는 처리량을 증가시키고, 공기에 대한 노출의 결과로서 표면 오염과 관련된 문제를 피할 수 있다.
적층된 재료 특성에 따라 식각 선택도가 달라지기 때문에, 상이한 금속 화합물 및/또는 상이한 고품질 재료(원소적으로 및/또는 조성적으로 동일한 유형의 것을 포함함) 간의 실제 선택도 차이가, 건식 식각 공정과 습식 식각 공정에서 다르게 나타날 수 있다는 사실에도 불구하고, 선택도는 습식 식각에 대한 프록시일 것으로 예상된다. 그러나, 식각 속도 및 웨이퍼-대-웨이퍼 균일성은 건식 식각 공정의 경우에 보다 쉽게 제어 가능하다.
일부 구현예는 불소 라디칼을 사용하여 등각성 식각을 수행하기 위해, 또는 상부 또는 측면 잔류 구조를 생성하기 위해 SiN 막의 고 선택적 건식 식각을 포함한다. 이는, 통상적으로 사용되는 습식 식각 단계를 건식 식각 단계로 대체하는 것을 가능하게 한다. SiN 막의 건식 식각 속도는, 예를 들어 밀도의 함수로서 결정될 수 있다. 습식 식각에서와 같이, 상부 또는 측면 잔류 구조를 생성하기 위해 상이한 막 특성을 갖는 SiN 막 사이의 건식 식각 선택도의 차이가 요구된다. 따라서, 수직 표면 상의 그리고 수평 표면 상의 SiN 막의 밀도를 변화시킴으로써, 원하는 토폴로지 프로파일이 얻어질 수 있다(측면 또는 상부/하부 잔류 또는 이들의 조합). 통상적으로 사용되는 공정을 포함한 건식 식각 공정에서, 산화물(SiO2, TiO2 및 ZrO2)은 또한 이러한 높은 식각 선택도를 나타낼 수 있다.
또한, 제안된 건식 식각 공정은 SiN의 증착 및 식각을 동일한 챔버에서 또는 다수의 챔버를 갖는 동일한 클러스터 툴에서 모두 수행시킬 수 있어, 처리량을 증가시키고 공기에 대한 노출의 결과로서 표면 산화물 형성과 관련된 문제를 피할 수 있다. 또한, 식각 속도 및 웨이퍼-대-웨이퍼 균일성은 습식 식각 공정보다 건식 식각 공정에서 더 쉽게 제어할 수 있다.
추가적으로, 일부 구현예는 단일 챔버 또는 반응기에서 증착 공정 및 건식 식각 공정을 수행하여, 본 개시에서 논의된 문제점 중 적어도 하나를 해결하는 것을 포함한다. 일반적으로, 이러한 방법은, (1) 플라즈마 강화 화학 기상 증착(PECVD) 또는 플라즈마 강화 원자층 증착(PEALD)에 의해 기판의 패터닝된 구조 상에 절연 막을 반응 챔버 내에 증착하는 단계로서, 수평 표면 상에 증착된 막의 일부분과 수직 표면 상에 증착된 막의 일부분은 상이한 내화학성 특성을 갖고(본 개시에서, "수직" 및 "수평", 또는 유사한 단어는 상대적 용어로서 사용되고, 각각 정확한 중력 방향 및 그에 직교하는 정확한 방향으로 제한되도록 의도되지 않으며, 각각 이방성 이온 충돌의 방향 또는 막 두께의 방향에 실질적으로 평행한 임의의 일반적인 방향 및 이에 실질적으로 직교하는 임의의 일반적인 방향으로 지칭됨); 그 다음 (2) 공정 (1)에서 증착된 막을 공정 (1)과 동일한 반응 챔버에서 원격 플라즈마 시스템을 사용하여 원격 플라즈마에 노출시키고, 등방성 건식 식각을 수행하여 막의 일부(타겟 막 유지 부분 이외의 부분)를 제거하고, 이에 의해 상기 막의 일부분을 실질적으로 상기 패턴화된 구조의 측벽 상에만 또는 상기 패턴화된 구조의 상부/하부 표면 상에만 남기는 단계를 포함한다.
개시된 구현예의 일부 양태에서, 제1 및 제2 유전체 층 사이의 식각 선택도의 차이를 이용함으로써 그리고 식각의 방향성을 제어함으로써, 최종 층 구조의 타겟 토폴로지 프로파일을 달성할 수 있는 반면에, 개시된 구현예의 일부 양태에서, 유전체 층의 평면내 식각 선택도의 차이를 이용함으로써, 최종 층 구조의 타겟 토폴로지 프로파일을 달성할 수 있다.
일부 구현예에서, 단지 예시로서 아래 표 1에 나타낸 바와 같이 공정 (a) 및 공정 (b)을 조작함으로써, 증착의 방향성 및 또한 식각의 방향성을 각각 제어함으로써, 표 1에 나타낸 바와 같이 원하는 타겟 토폴로지 프로파일을 달성할 수 있다. 표 1에 나타낸 바와 같이, 일부 구현예에서, 공정 (a) 및 (b)에서 상이한 작동 계획, 또는 상이한 조합은 동일하거나 유사한 최종 토폴로지 프로파일 유형(측면 우세, 등각성, 또는 상부/하부 우세, 그러나 실제 프로파일은 상이할 수 있음)을 초래할 수 있으며, 여기서 최종 층 구조의 토폴로지 프로파일과 관련하여 동일하거나 유사한 결과를 달성하기 위한 다수의 방법(조합)이 존재한다. 표 1에서, "T", "B", 및 "S"는 각각 "상부", "하부", 및 "측면"을 지칭하며, "도 #"는 상응하는계획을 사용하여 형성된 최종 층 구조를 보여주는 도면 번호를 나타낸다. 용어 "등각성"은 일부 구현예에서 약 70% 내지 130%(예, 80% 내지 120%, 90% 내지 110%, 가장 일반적으로 약 100%) 초과와 같이 높은 등각성을 지칭한다. 용어 "우세"는 일부 구현예에서, 적어도 40%, 50%, 100%, 200%, 500%, 1000%, 또는 이들의 임의의 범위만큼 우세와 같이, 의도된 목적을 위해 등각성이지 않거나 재료 차이가 실질적으로 차이가 나는 것을 지칭한다. 또한, 용어 "잔류"는 일부 구현예에서 "우세"의 의미를 지칭한다. 용어 "저 품질"은 일부 구현예에서 기준 품질에 비해 낮은 내화학성, 예를 들어 더 높은 건식 식각 속도, 또는 더 낮은 밀도를 지칭한다. 본 개시에서, 예를 들어 수치 범위를 정의하는 임의의 수는 문맥에 따라, 대표 수, 평균 수, 무작위로 선택된 수, 중간 수, 통상적으로 또는 일반적으로 정의된 수, 또는 이에 상응하는 임의의 수이다.
표 1
Figure pat00001
전술한 바와 같이, 일부 구현예는 측면 및 횡방향 면을 갖는 단차로 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법을 제공하며, 상기 방법은, (a) 제1 증착 조건 하에서 상기 기판의 미리 선택된 영역 상에 유전체 층을 증착하는 공정(상기 유전체 층은, 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 대한 저항성이 조정된 부분을 가짐); 및 (b) 공정 (a)에서 수득된 유전체 층을 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 노출시킴으로써 상기 유전체 층의 일부분의 적어도 일부를 제거하고, 이에 의해 상기 기판 상에 상기 타겟 토폴로지 프로파일을 갖는 층 구조를 형성하는 공정을 포함한다. 본 개시에서, 막의 화학적 "저항성"은 주어진 건식 식각 조건 하에서 단위 시간 당 막의 식각된 두께에 기초하여 평가될 수 있고, 제2 막(또는 제2 부분)에 대한 제1 막(또는 제2 부분)의 "식각 선택도"(이는 "식각 속도 선택도"로도 지칭될 수 있음)는 제2 막의 것에 대한 제1 막의 내화학성의 비율에 기초하여 평가될 수 있다.
일부 구현예에서, 상기 방법은, 공정 (a) 이전에, (i) 기준 증착 조건 및 기준 건식 식각 조건을 제공하는 단계(상기 조건 하에서 공정 (a) 및 공정 (b)를 수행함으로써, 기준 토폴로지 프로파일을 갖는 층 구조가 상기 기판 상의 단차에 형성됨); (ii) 이렇게 수득된 기준 토폴로지 프로파일을 타겟 토폴로지 프로파일과 비교할 시, 상기 기판 상의 단차에서 토폴로지 프로파일을 갖는 층 구조를 형성하는 방식으로, 상기 기준 증착 조건 중 적어도 하나의 파라미터 및/또는 상기 기준 건식 식각 조건 중 적어도 하나의 파라미터를 변경하는 단계(상기 토폴로지 프로파일은 상기 기준 토폴로지 프로파일보다 상기 타겟 토폴로지 프로파일에 보다 유사함); (iii) 상기 변경된 증착/건식 식각 조건 하에서 공정 (a) 및 공정 (b)를 수행하는 단계; 및 (iv) 이렇게 수득된 토폴로지 프로파일이 타겟 토폴로지 프로파일과 실질적으로 동등해질 때까지 선택적으로 (ii) 및 (iii) 단계를 반복하는 단계를 추가로 포함한다.
일부 구현예에서, 단계 (ii)에서 변경된 기준 증착 조건 중 적어도 하나의 파라미터는, 공정 (a)가 수행되는 반응 공간에서의 플라즈마 전력, 가스 선택, 가스 유량, 압력 및 온도 중 적어도 하나이다. 일부 구현예에서, 단계 (ii)에서 변경된 기준 건식 식각 조건 중 적어도 하나의 파라미터는 공정 (b)가 수행되는 반응 공간의 적어도 온도이다.
본원에 개시된 기술은 다양한 산업에 광범위하게 적용 가능하고, 상기 측면 및 상기 횡방향 면을 갖는 상기 단차는 측벽을 상기 측면으로서, 그리고 하부면 및 상부면을 횡방향 면으로서 갖는 트렌치로 구성된 응용예; 상기 측면 및 상기 횡방향 면을 갖는 단차는 깊이 방향 면을 상기 측면으로서, 그리고 높이 방향 하부 및 상부면을 횡방향 면으로서 구비한 3D NAND 구조의 일부인 응용예; 및 측면 및 횡방향 면을 갖는 단차가 측면으로서 높이 면 및 횡방향 면으로서 깊이 면을 갖는 계단의 일부인 응용예를 포함하나 이에 제한되지 않는다.
본 개시에서 논의된 바와 같이, 본원에 개시된 기술은 다양한 구현예를 포함하고, 각각의 구현예는 임의의 조합으로 다음 특징부 중 하나 또는 둘 이상을 포함할 수 있다. 또한, 본 개시에서, 명시적으로, 묵시적으로, 또는 내재적으로 개시된 모든 특징부에서, 일 구현예에 사용된 이들 중 임의의 하나 이상은 상호 교환적으로(또는 대안적으로) 사용되거나, 달리 언급되지 않는 한 다른 구현예에서 추가적으로 사용될 수 있거나, 이러한 대체 또는 추가가 가능하지 않거나, 부작용을 야기하거나, 의도된 목적을 위해 작용하지 않는다.
일 양태에서, 구현예는 다음의 특징부 중 적어도 하나 또는 다음의 특징부 중 두 개 이상을 임의의 민감한 조합으로 포함하지만, 이에 제한되지 않는다:
1) 내화학성 또는 식각 선택도의 관점에서 두 개의 상이한 재료(제1 재료 및 제2 재료)를 선택적으로 건식 식각하는 방법으로서, 상기 재료는 기판의 패터닝된 표면 상에 증착되고, 상기 건식 식각 공정은 식각 가스로부터 생성된 불소 및/또는 염소 라디칼에 상기 패터닝된 표면을 등각성 있게 노출시키는 단계를 포함한다.
2) 방법 1)에 있어서, 상기 제1 재료 및 상기 제2 재료의 식각 선택도는 다음에 의해 상이하게 조절된다:
a. 식각 공정 동안의 기판 온도; 및/또는
b. 패턴닝된 표면 상에 증착된 제1 및 제2 재료 각각의 막 품질.
3) 방법 2)에 있어서, 재료 품질은 다음을 포함한 재료 증착 파라미터를 변하시킴으로써 조절된다:
a. RF 전력, 바이어스 전력 등과 같은 플라즈마 조건;
b. 전구체 가스를 포함한 공정 가스의 선택;
c. 공정 가스의 가스 흐름;
d. 증착 공정용 반응 챔버 내 총 가스 압력; 및/또는
e. 증착 공정 동안의 기판 온도.
4) 방법 1)에 있어서, 상기 제1 및/또는 제2 재료가 금속 산화물, 금속 질화물, 금속 탄화물, 또는 이들의 조합(예, TiO, ZrO, TiN, MoO, MoC, TiCO 등)으로 구성된다.
5) 방법 1)에 있어서, 상기 제1 재료는 금속 화합물 재료로 구성되고, 상기 제2 재료는 SiO로 구성된다.
6) 방법 1)에 있어서, 상기 제1 재료는 TiO로 구성되고, 상기 제2 재료는 SiO 또는 SiN으로 구성된다.
7) 방법 1)에 있어서, 상기 제1 재료는 내화학성 측면에서 상기 제2 재료보다 낮은 품질을 갖는다.
8) 방법 1)에 있어서, 상기 공정 가스는 F 및 Ar을 포함한다.
9) 방법 1)에 있어서, 상기 공정 가스는 F, N, 및 O를 포함한다.
10) 방법 1)에 있어서, 상기 공정 가스는 Cl을 포함한다.
11) 방법 1)에 있어서, 상기 라디칼은 다음을 사용하여 생성된다:
a. 원격식 플라즈마 공급원(예, 마이크로파 플라즈마, CCP, ICP); 또는
b. 열 분해 공정(예, 핫 와이어).
12) 방법 1)에 있어서, 상기 식각 공정용 반응 챔버는 상기 증착 공정용 반응 챔버와 클러스터링되고, 상기 증착 공정 및 상기 식각 공정은 진공을 파괴하지 않고 순차적으로 연속적으로 수행된다.
13) 방법 1)에 있어서, 상기 증착 공정 및 상기 식각 공정은 동일한 반응 챔버에서 수행된다.
다른 양태에서, 구현예는 다음의 특징부 중 적어도 하나 또는 다음의 특징부 중 두 개 이상을 임의의 민감한 조합으로 포함하지만, 이에 제한되지 않는다:
1) 다른 재료로 구성된 다른 막에 대한 SiN 막의 고선택성 건식 식각 방법으로서, 막은 기판의 패터닝된 표면 상에 증착되고, 상기 건식 식각 공정은 상기 패터닝된 표면을 식각 가스로부터 생성된 불소 및/또는 염소 라디칼에 등각성 있게 노출시키는 단계를 포함한다.
2) 방법 1)에 있어서, 상기 다른 재료는 막 밀도 및/또는 막 조성과 같은 막 품질 측면에서 상기 SiN 막을 구성하는 SiN과 상이한 SiN이고, 상기 식각 가스는 SF6 또는 NF3과 같은 불소 함유 가스이다.
3) 방법 1)에 있어서, 고도로 선택적인 건식 식각은 패터닝된 표면의 단차 구조 상에 증착된 SiN 막에 수행되고, SiN 막의 원하는 부분은 막 품질의 차이로 인해 SiN 막의 나머지 부분에 대해 선택적으로 제거된다.
4) 방법 1)에 있어서, 상기 다른 재료는 SiO2, SiC, SiCO, Ti 산화물, Hf 산화물, 및/또는 Zr 산화물과 같은 유전체 재료이다.
5) 방법 1)에 있어서, 상기 식각 가스는 F 및 Ar을 포함한다.
6) 방법 1)에 있어서, 상기 식각 가스는 F, N 및 O를 포함한다.
7) 방법 1)에 있어서, 상기 식각 공정은 F 라디칼보다는 Cl 라디칼을 사용한다.
8) 방법 1)에 있어서, 상기 라디칼은 다음을 사용하여 생성된다:
a. 원격식 플라즈마 공급원(예, 마이크로파 플라즈마, CCP, ICP); 또는
b. 열 분해 공정(예, 핫 와이어).
9) 방법 2)에 있어서, 상기 SiN 막을 구성하는 SiN 및 상기 다른 막을 구성하는 SiN의 식각 선택도는, 다음의 공정 조건을 변경함으로써 상이하게 조절된다.
a. RF 전력, 바이어스 전력 등과 같은 플라즈마 조건;
b. 전구체 가스를 포함한 공정 가스의 선택;
c. 공정 가스의 가스 흐름;
d. 증착 공정용 반응 챔버 내 총 가스 압력; 및/또는
e. 증착 공정 동안의 기판 온도.
10) 방법 1)에 있어서, 산화물(SiO, TiO, ZrO)인 상기 다른 막의 식각 선택도에 대한 상기 SiN 막의 식각 선택도는 다음 조건을 변경함으로써 조절된다:
a. 산화물의 막 밀도에 대한 SiN 막의 막 밀도;
b. 전구체 가스를 포함한 공정 가스의 선택;
c. RF 전력, 바이어스 전력 등과 같은 플라즈마 조건;
d. 공정 가스의 가스 흐름;
e. 증착 공정용 반응 챔버 내 총 가스 압력; 및/또는
f. 증착 공정 동안의 기판 온도.
11) 방법 1)에 있어서, 상기 식각 공정용 반응 챔버는 상기 증착 공정용 반응 챔버와 클러스터링되고, 상기 증착 공정 및 상기 식각 공정은 진공을 파괴하지 않고 순차적으로 연속적으로 수행된다.
12) 방법 4)에 있어서, 상기 증착 공정 동안에 상기 공정 온도를 변화시킴으로써, 상기 SiN 및 상기 다른 막의 식각 선택도가 조절된다.
다른 일 양태에서, 구현예는 다음의 특징부 중 적어도 하나 또는 다음의 특징부 중 두 개 이상을 임의의 센스 있는 조합으로 포함하지만, 이에 제한되지 않는다:
1) 기판의 패터닝된 표면 상에 형성된 막의 토폴로지 프로파일을 조절하는 방법으로서, 패터닝된 표면은 수평 표면(전형적으로 오목부의 상부 표면 및 하부 표면) 및 수직 표면(전형적으로 오목부의 측벽)으로 구성된 단차 구조로 구성되며, 상기 방법은, (1) 수평 표면 상에 증착된 막의 일부분 및 수직 표면 상에 증착된 막의 일부분이 상이한 내화학성 특성을 갖는 방식으로 반응 챔버에서 상기 기판의 패터닝된 표면 상에 막을 증착하는 단계; 및 (2) 상기 반응 챔버 내에서 상기 막에 등방성 건식 식각을 수행하되 (a) 상기 수직 표면 상에 증착된 막의 대부분 또는 실질적으로 전부를 남기도록 수평 표면 상에 증착된 막의 일부를 대부분 제거하거나 (b) 상기 수직 표면 상에 증착된 막의 일부를 대부분 제거하여 수평 표면 상에 증착된 막의 부분만 대부분 또는 실질적으로 남기는 방식으로 하는 단계를 포함한다.
2) 방법 1)에 있어서, 상기 등방성 건식 식각은 원격식 플라즈마 시스템을 사용하여 수행된다.
3) 방법 1)에 있어서, 상기 막은 절연막이다.
4) 방법 3)에 있어서, 상기 절연막은 SiN 또는 SiO로 구성된다.
5) 방법 3)에 있어서, 상기 절연막은 용량성 결합 플라즈마(CCP)를 사용하여 증착된다.
6) 방법 4)에 있어서, 상기 절연막은 아미노실란, 할로겐화 실란, 모노실란, 및 디실란으로 이루어진 군으로부터 선택되는 적어도 하나의 전구체를 사용하여 증착된 SiN 막이다.
7) 방법 3)에 있어서, 상기 절연막은 에천트로서 NF3 및/또는 CF4와 같은 불소 함유 건식 가스, 및 Ar, N2, 및/또는 He와 같은 희석 가스를 사용하는 공정 (b)에서 건식 식각을 거친다.
8) 방법 1)에 있어서, 상기 막은 플라즈마 강화 화학 기상 증착(PECVD), 플라즈마 강화 원자층 증착(PEALD), 또는 고밀도 플라즈마 화학 기상 증착(HDPCVD)에 의해 공정 (a)에서 증착되는 방법.
일부 구현예에서, 원격식 플라즈마는 챔버 세정을 위해 통상 또는 종래에 사용되는 공정 (b)에서 막의 건식 식각에 사용된다. 막의 건식 식각용 원격식 플라즈마의 사용은, 높은 생산성, 즉 습식 식각보다 현저하게 높은 높은 식각 속도를 포함한 이점이 크다. 원격식 플라즈마 건식 식각의 식각 속도가 높기 때문에, 원격식 플라즈마 건식 식각의 식각 속도의 제어 가능성을 개선하기 위해, 예를 들어 NF3과 같은 에천트의 농도 또는 유량은 챔버 세정에 일반적으로 사용되는 것보다 낮은 값(예, 10% 내지 90%, 30% 내지 70%, 또는 약 50%)으로 설정될 수 있다. 또한, 막이 트렌치의 표면을 따라 증착되는 경우에, 트렌치의 종횡비는 등방성 건식 식각의 제어 가능성에 영향을 미칠 수 있다. 이러한 문제를 완화시키기 위해, 예를 들어 트렌치에 증착된 막의 상단부/하단부에 대한 측벽 부분의 식각 선택도는, 예를 들어 공정 (a)(증착 공정)에서 증착 압력을 변경함으로써, 이들 부분의 막 품질을 상이하게 조절함으로써 조정될 수 있다.
본 발명의 일부 양태 및/또는 구현예는 예시로서 도면을 참조하여 상세히 설명될 것이지만, 본 발명은 이에 제한되는 것으로 의도되지 않는다.
도 23은 구현예의 일부 양태를 나타내고, (a) 진공을 파괴하지 않고 클러스터 툴에서 증착 및 식각을 조합하는 공정, 및 (b) 동일한 반응기에서 증착 및 식각을 수행하는 공정의 개략적이고 단순화된 연속 공정 계획을 나타낸다. 공정 계획 (a) 중, 단계(S11)에서, 기판이 제공되며("기판 제공"), 상기 기판은 ("수직 면" 또는 "측벽"으로 지칭될 수 있는) 측면 및 ("수평 면" 또는 "상부/하부 면"으로 지칭될 수 있는) 상부면을 갖는, 적어도 하나의 단차로 구성된 패턴 표면을 갖는다. 단계(S12)에서, 기판은 증착을 위해 반응기 챔버(1)로 이송된다("RC 1로 이송"). 기판을 반응 챔버(1)에 전달하기 전에, 제1 유전체 층(예, SiO 재료 또는 다른 산화물 재료로 구성됨)이 기판 상에 이미 형성될 수 있거나, 반응 챔버(1) 내에 형성될 수 있고, 이에 의해 단차 표면은, 제2 유전체층을 반응 챔버(1) 내에서 증착하기 전에 제1 유전체 층으로 구성된다. 단계(S13) 중, 반응 챔버(1)에서, 금속 화합물(본원에서 TiO, TiN뿐만 아니라, 준금속 화합물 및 실리콘 화합물, 예를 들어 SiN을 포함함)로 구성된 제2 유전체 층이, 증착 조건 하에서 제1 유전체 층과 바로 접촉하는 방식으로 제1 유전체 층의 미리 선택된 영역 상에 증착된다("금속 화합물 증착"). 제2 유전체 층은, 제1 유전체 층보다 불소 및/또는 염소 라디칼에 대한 더 낮은 저항성을 갖는다.
단계(S14)에서, 반응 챔버(1)에서 제2 유전체 층의 증착이 완료되면, 기판은 건식 식각용 반응 챔버(2)(상기 챔버는 웨이퍼 핸들링 로봇을 갖는 웨이퍼 이송 챔버에 부착될 수 있고, 상기 반응 챔버(1)도 또한 부착됨)로 이송되어("RC 2로 이송"), 기판이 공기에 노출되지 않고 반응 챔버(2)로 이송될 수 있도록 한다. 단계(S15)에서, 제2 유전체 층은 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 노출됨("라디칼 식각")으로써, 제1 유전체 층을 제거하지 않고 제2 유전체 층의 적어도 일부를 제거하여 기판 상에 토폴로지 프로파일을 갖는 층 구조를 형성한다. 라디칼 식각은 이온(바람직하게는 이온이 실질적으로 없거나 거의 없음)보다는 주로 또는 주로 라디칼을 사용하는 등방성 식각일 수 있으므로, 제2 유전체 층이 등각성이고 균질한(평면내 품질 균일성) 경우에 실질적으로 등각성 식각(즉, 식각의 방향성이 실질적으로 없거나 거의 없음)이 수행될 수 있어 등각성 최종 층 구조를 생성하는 반면에, 제2 유전체 층이 비등각성(예, 상부 우세 증착)이고/이거나 평면내 품질 변화(예, 측면 저품질)를 갖는 경우에 상부 잔류 토폴로지 프로파일 또는 측면 잔류 토폴로지 프로파일을 갖는 최종 층 구조를 생성한다. 라디칼 식각은 습식 식각과 유사하지만 습식 식각보다 식각이 훨씬 더 빠르다.
도 23의 공정 계획 (b)에서, 증착 공정 및 식각 공정은 동일한 반응 챔버에서 수행된다. 이러한 단순화된 공정 계획(증착 + 식각 공정 흐름)은 진공을 파괴하지 않고 SiN 패턴 정의(측면 잔류 또는 상부 잔류)를 가능하게 한다. 공정 계획 (b)에서, 단계(S21, S22, S23, 및 S24)는 공정 계획 (a)의 단계(S11, S12, S13, 및 S15)에 상응하고, 여기서 공정 계획 (b)에서, 단계(S14)에 상응하거나 동등한 단계는 없다.
공정 계획 (b)는 일부 구현예에서, 단지 예시로서 나타낸 다음 반응기 설계를 이용해 달성될 수 있다. 라디칼 식각의 경우, 플라즈마는 반응 챔버 내의 기판과 직접 접촉하지 않는다. 일부 구현예에서, 가능한 플라즈마 공급원은 용량성 결합 플라즈마(CCP), 유도성 결합 플라즈마(ICP), 또는 마이크로파 플라즈마(MWP)일 수 있는 원격식 플라즈마이다. 따라서, 두 개의 전극이 챔버 내에 병렬로 제공되고 기판이 두 개의 전극 사이에 배치되는 인시츄 CCP는 라디칼 식각에 적합하지 않다.
도 11a는, 원격식 플라즈마 공급원이 메인 공정 챔버에 포함된, 원격식 플라즈마 처리 장치의 단순화된 구성을 개략적으로 나타낸다. 도 11b는, 원격식 플라즈마가 원격으로 생성되고 반응성 종이 반응 챔버 내로 공급되는 원격식 플라즈마 처리 장치의 단순화된 구성을 개략적으로 보여준다. 불소 라디칼의 생성은, 예를 들어 유도성 결합 플라즈마(ICP), 용량성 결합 플라즈마(CCP), 또는 마이크로파 플라즈마에 의해 수행될 수 있다. 도 11a 및 도 11b에 나타낸 바와 같이, 인시츄 CCP는 증착을 수행하기 위해, 상부 전극(샤워헤드)(3)과 웨이퍼(W)가 배치되는 하부 전극(서셉터)(1) 사이에 플라즈마를 생성함으로써 사용되며, 여기서 상부 전극(3)은 RF 전력 공급원(5)에 연결되는 반면에 하부 전극(1)은 저주파수 바이어스 공급원(4)에 연결된다. 라디칼 식각을 수행하기 위해, 도 11a에 나타낸 장치는 플라즈마 전력 공급원(6)(예를 들어, RF 전력 공급원 또는 마이크로파 전력 공급원)에 연결된 최상부 전극(2)과 상부 전극(3) 사이에 생성된 간접식 플라즈마(8)를 사용한다. 플라즈마(8)가 최상부 전극(2)과 상부 전극(3) 사이의 공간에 한정되기 때문에, 웨이퍼(W)는 플라즈마에 직접 노출되지 않지만, 상부 전극(3)을 통과하여 공급되고 웨이퍼의 표면(W)에 도달하는 플라즈마의 라디칼에 노출된다. 최상부 전극으로 증착용 공정 가스 및/또는 건식 식각용 에천트 가스를 공급하기 위해 가스 공급 라인(7)이 연결된다.
라디칼 식각을 수행하기 위해, 도 11b에 나타낸 장치는, 에천트 가스가 가스 라인(12)을 통해 공급되고 플라즈마 전력 공급원(9)에 연결된, 원격식 플라즈마 유닛(10) 내부에서 플라즈마(13)를 생성하는 원격식 플라즈마 유닛(10)을 사용한다. 플라즈마(13)가 원격식 플라즈마 유닛(10) 내에 한정되기 때문에, 웨이퍼(W)는 플라즈마에 직접 노출되지 않지만, 상부 플레이트(2')에 연결된 가스 라인(11)을 통해 그리고 상부 전극(3)(샤워헤드)을 통해 공급되고 이동하는 플라즈마의 라디칼에 노출되어, 웨이퍼(W)의 표면에 도달한다. 막의 증착을 수행하는 경우에, 원격식 플라즈마 유닛(10)은 활성화되지 않고, 공정 가스는, 가스 라인(12), 원격식 플라즈마 유닛(10), 가스 라인(11), 및 상부 전극(샤워헤드)(3)을 통해, 상부 전극과 하부 전극 사이의 반응 공간에 공급된다.
도 14는 증착용 RF 플라즈마 공급원과 건식 식각용 MW 플라즈마 공급원이 구비된 플라즈마 처리 장치의 개략적인 단순화 구성을 예시로서 나타내며, 여기서 건식 식각용 MW 플라즈마는 반응 챔버(29)의 측벽 상에 제공된 포트를 통해 서셉터(21) 상에 배치된 반응 공간으로 공급된다. MV 플라즈마는 MW 전력 공급원(24)에 연결된 원격식 플라즈마 유닛(28)에 의해 생성되며, 이를 통해 여기에 공급된 에천트 가스(예, SF6)가 웨이퍼 표면의 건식 식각용 반응 공간에 공급되는 라디칼이 된다. 웨이퍼(W) 상에 막의 증착을 위해, 예를 들어 임의의 적절한 CCP 시스템이 사용될 수 있고, 임의의 적절한 종래의 CCP 시스템을 포함하며, 여기서 RF 전력 공급원(25)과 가스 라인(27)이 최상부 창(22) 상에 제공된 샤워헤드(상부 전극)(23)에 연결된다. 가스 라인(27)은, 증착뿐만 아니라 필요에 따라 건식 식각을 위해 불활성 가스(예, H2, N2, 및/또는 He)를 공급하기 위해 사용된다. 서셉터는 하부 전극으로서 기능하며, 증착을 위해 접지된다. 반응 챔버(29) 내부의 압력은, 고진공을 위해 TMP(터보 분자 펌프)에 연결된 포트(26)를 통해 반응 공간으로부터 가스를 방출함으로써 제어된다.
도 17은, RF 플라즈마 공급원 및 원격식 플라즈마 공급원을 갖춘 플라즈마 처리 장치의 개략적인 단순 구성을 예시로서 나타낸다. 이는 도 11b에 나타낸 장치에서와 같이 원격식 플라즈마 유닛을 사용하는 시스템의 변형이다. 이러한 장치는, 바람직하게는 후술할 시퀀스를 수행하도록 프로그래밍된 제어부와 연결되어 있다. 이 도면에서, 서로 마주하며 평행한 한 쌍의 전기 전도성 평판 전극(44 및 42)을 반응 챔버(43)의 내부(반응 구역)(51)에 제공하고, HRF 전력(13.56 MHz 또는 27 MHz)(60)을 일측에 인가하고 타측(52)을 전기적으로 접지시킴으로써, 플라즈마가 전극들 사이에서 여기된다. 온도 조절기가 하부 스테이지(하부 전극)(42)에 제공되어, 그 위에 놓인 기판(41)의 온도는 주어진 온도로 일정하게 유지된다. 상부 전극(44)은 샤워 플레이트로서의 역할도 수행하며, 반응물 가스(및 귀가스) 및 전구체 가스는 가스 라인(61) 및 가스 라인(62) 각각을 통해, 그리고 샤워 플레이트(44)를 통해 반응 챔버(43)로 유입된다. 추가적으로, 반응 챔버(43)에는 배기 라인(47)을 갖는 원형 덕트(53)가 제공되고, 이를 통해 반응 챔버(43)의 내부(51)에 있는 가스가 배기된다. 추가적으로, 희석 가스가 가스 라인(43)을 통해 반응 챔버(63)로 유입된다. 또한, 반응 챔버(43) 아래에 배치된 이송 챔버(45)는, 이송 챔버(45)의 내부(이송 구역)(56)를 통해 반응 챔버(43)의 내부(51)로 밀봉 가스를 유입하기 위한 밀봉 가스 라인(64)을 구비하며, 반응 구역과 이송 구역을 분리하기 위한 분리 판(54)이 제공된다(웨이퍼가 이송 챔버(45)로 또는 이송 챔버로부터 이송되는 게이트 밸브는 본 도면에서 생략됨). 이송 챔버에는 배기 라인(46)이 또한 구비된다. 일부 구현예에서, 다중 원소 막의 증착 및 표면 처리(들)는 동일한 반응 공간에서 수행되어, 모든 단계들은 기판을 공기 또는 다른 산소 함유 대기에 노출시키지 않고 연속적으로 수행될 수 있다. 일부 구현예에서, 가스를 여기시키기 위한 원격식 플라즈마 유닛이 사용될 수 있다. 웨이퍼의 패터닝된 표면 상에 막 증착이 완료되면, 건식 식각은, 가스 라인(61, 62, 63)의 하류에 있는 샤워헤드(44)에 연결된 가스 라인에 연결되는, 원격 플라즈마 시스템(70)을 사용하기 시작한다. 원격식 플라즈마 시스템(70)으로 에천트 가스 및 불활성 가스가 가스 라인(71, 72)을 통해 각각 공급되어, 에천트 가스가 여기되어, 건식 식각을 위해 반응 구역(51)에 공급되는 라디칼을 포함한 플라즈마를 생성한다.
일부 구현예에서, 도 23의 (b)에 나타낸 일부 구현예에서, 건식 식각은 기판의 단차에서 형성된 층 구조의 토폴로지 프로파일을 조절하기 위해 원격식 플라즈마에 포함된 라디칼을 사용하기 때문에, 증착 공정 및 건식 식각 공정은, 증착 및 건식 식각을 위해 적절한 플라즈마 공급원이 구비된 경우에 동일한 반응 챔버에서 수행될 수 있다. 이러한 장치의 설치 면적은, 증착 및 습식 식각을 위해 종래의 별도의 반응 챔버를 사용하는 경우보다 상당히 작을 수 있고, 건식 식각이 습식 식각보다 훨씬 더 빠르기 때문에(상당히 더 높은 식각 속도를 가짐) 처리량 또한 상당히 개선될 수 있다. 통상적으로, 일부 장치는 챔버 세정을 위한 원격식 플라즈마 유닛이 구비된다. 그러나, 상기 원격 플라즈마 유닛은 챔버 세정을 위해서만 제공되기 때문에, (1) 세정 사이클은 유지 보수를 위해 설정된 세정 일정에 따라 주기적으로 또는 간헐적으로 수행되며, 매 증착 사이클 후에 수행되지 않고, (2) 세정 조건은 가장 효과적으로 내부 벽, 샤워헤드, 및 챔버 내의 서셉터를 세정하기 위해 지속적으로 설정되고, 최종 층 구조의 타겟 토폴로지 프로파일을 달성하도록 기판의 오목부 내에 형성된 개별 층 구조의 토폴로지 프로파일을 구체적으로 조절하도록 전혀 조정되지 않으며, (3) 챔버 세정에 사용된 플라즈마 밀도는 챔버의 내부 표면 상에 형성된 입자 층을 효과적으로 제거하기 위해 높다(상기 입자 층은 종종 가시적이고 따라서 적어도 마이크로미터 수준 제어, 심지어 나노미터 이상 수준 제어를 요구하는데, 그 이유는 상기 입자 층이 마이크로미터 수준 두께(적어도 1 마이크로미터)를 갖기 때문이며, 이는 나노미터 수준 제어(1 마이크로미터 미만 제어, 바람직하게는 100 nm, 50 nm, 20 nm, 10 nm 이하로 조절)를 필요로 하는 막 또는 층의 토폴로지 프로파일을 조절하기에 너무 높은 값임). 또한, 챔버 세정을 위한 적절한 플라즈마 생성 주파수는, 기판의 층 구조의 토폴로지 프로파일을 조절하는 것과 동일하지 않다. 본 발명의 일부 구현예에서, 증착 공정 및 건식 식각 공정 전체가, 최종 층 구조의 타겟 토폴로지 프로파일에 따른 통합 공정으로서 조정되고 제어된다.
도 15는, 예시로서 증착용 장치 및 습식 식각용 다른 장치를 사용하는 공정을 나타낸다. 도 16은, 예시로서 증착 및 건식 식각용 단일 장치를 사용하는 공정을 나타낸다. 도 15 및 도 16에 나타낸 두 가지 공정 계획 모두에서, 증착 공정은 유사하게 수행될 수 있으며, 반응 챔버(도 15의 툴 A, 도 16의 툴 C)에, 트렌치를 갖는 기판(31)이 배치되고, 플라즈마 충돌을 사용함으로써 트렌치에 걸쳐 막 성질의 방향성을 갖는 유전체 막(32)을 형성한다. 막 특성의 방향성은, 수평 표면 상의 막의 일부분과 수직 표면 상의 막의 일부분 사이에서 내화학성(화학적 차이), 밀도(기계적 차이), 두께(구조적 차이), 및/또는 조성(성분 차이)과 같은 특성의 차이를 지칭하지만, 이에 제한되지는 않으며, 이들 모두는 식각 선택도와 연관된다. 임의의 적절한 종래의 방법 또는 본 개시에서 명시적으로, 묵시적으로, 또는 본질적으로 설명된 것을 포함한 임의의 적절한 방법이 사용될 수 있다. 예를 들어, 일부 구현예에서, 2017년 9월 5일에 발행된 미국 특허 제9,754,779호, 2019년 11월 5일에 발행된 미국 특허 제10,468,251호, 및 2020년 1월 7일에 발행된 미국 특허 제10,529, 554호에 개시된 이러한 방법이 사용될 수 있으며, 이들 각각의 개시 내용은 그 전체가 참조로서 본원에 포함된다. 도 15 및 도 16 모두에서, 기판(31) 상에 증착된 막(32)은 등각성이지만, 도 15에서의 습식 식각 특성 및 도 16에서의 건식 식각 특성의 측면에서 방향성을 갖는다.
식각의 경우, 도 15에서, 기판(31)은 다른 반응 챔버(툴 B; 습식 식각 장치)로 이송되어 습식 식각에 의해 상단부/하단부 중 하나를 제거하여 측면 잔류 토폴로지 프로파일(32')을 생성하거나, 막의 측벽 부분을 제거하여 상부/하부 잔류 토폴로지 프로파일(32")을 생성하는 반면에, 도 16에서, 상기 기판(31)은 다른 반응 챔버로 이송되지 않고 동일한 반응 챔버(툴 C, 이중 기능 장치)에 남아 건식 식각에 의해 상단부/하단부 중 하나를 제거하여 측면 잔류 토폴로지 프로파일(32')을 생성하거나, 막의 측벽 부분을 제거하여 상부/하부 잔류 토폴로지 프로파일(32")을 생성한다. 도 16에서, 건식 식각이 동일한 반응 챔버에서 수행되기 때문에, 반응 챔버의 설치 면적은 증가하지 않고, 처리량은 높은(높은 식각 속도 및 전달에 대한 데드타임 없음) 반면에, 도 15에서, 습식 식각이 다른 반응 챔버에서 수행되기 때문에, 두 개의 반응 챔버의 설치 면적은 두 배이고, 처리량은 낮다(낮은 식각 속도 및 전달에 필요한 시간 있음).
일부 구현예에서, 두 개의 층의 효과적인 건식 식각 선택도를 이용하는, 증착 및 건식 식각의 조합된 공정은, 3DNAND 제작에 적절히 적용될 수 있다. 도 7은 불소 라디칼을 사용하는 3DNAND 제작에서의 단순화되고 개략적인 공정 시퀀스((a)→(b)→(c)→(d)→(e)→(f))를 예시로서 나타낸다. 선으로 둘러싸인 구조 (e)는 절연 층(예, SiO2 100)에 대해 높은 원하는 식각 선택도(>예, 1000:1)를 갖는 희생 층(예, SiN 102)의 제거 단계를 나타내며, 여기서 불소 라디칼을 사용하는 본 개시에서 기술된 공정은, 종래의 습식 식각 대신에 이러한 제거 단계 동안에 사용된다. 전형적인 층뿐만 아니라, 층의 전형적인 치수가 예시로서 다음과 같이 표시된다: 100: 절연 층(PECVD에 의해 증착된 SiO2 30 nm 두께); 101: 기판; 102: 희생 층(PECVD에 의해 증착된 SiN 30 nm 두께); 103: 샤넬(SiO2로 충진된 폴리-Si); 104: 금속 컨택(TiN 확산 장벽/W 충진). 이 도면에서, 구조 (a)는 SiO/SiN 스택 형성을 나타내고, 구조 (b)는 직경이 100 nm인 비아 식각을 나타내고, 구조 (c)는 폴리-Si/SiO2로 충진된 비아를 나타내고, 구조 (d)는 비아 식각을 나타내고, 구조 (e)는 희생 층 SiN 제거(NF3/SF6 라디칼 건식 식각)를 나타내고, 구조 (f)는 금속 컨택 형성을 나타낸다.
도 8a는 불소 라디칼을 사용하여 "계단" 상에 3DNAND를 제작함에 있어서 단순화되고 개략적인 공정 시퀀스((a)→(b)→(c)→(d))를 예시로서 나타낸다. 도 8b는 도 8a의 공정 시퀀스를 사용하여 제조된 최종 구조를 예시로서 나타낸다. 선으로 둘러싸인 구조 (d)는 희생 층(예, SiN 203)의 상부 잔류 식각을 나타낸다. 수직 표면(측벽) 상의 희생 층의 막 품질은 수평 표면(상부, 하부) 상의 막 품질보다 상당히 낮기 때문에, 불소 라디칼을 사용하는 경우에 이러한 품질 차이(예, 내화학성의 차이는 밀도 및/또는 조성물 등의 차이에 기인할 수 있음)는 상단부/하단부에 대해 측벽 부분의 선택적 식각을 생성한다. 막의 상단부/하단부와 막의 측벽 부분 사이의 품질 차이는, 본 개시에서 설명된 바와 같이 SiN 막 증착 파라미터를 변경함으로써 제공될 수 있다. 전형적인 층뿐만 아니라, 층의 전형적인 치수가 예시로서 다음과 같이 표시된다: 100: 절연 층(SiO2 30 nm 두께); 101: 기판; 102: 희생 층(PECVD에 의해 증착된 SiN 유형 1 30 nm 두께); 104: 금속 컨택(TiN 확산 장벽/W 충진); 203: 희생 층(NH3 및 DCS를 사용하여 PEALD에 의해 증착된 SiN 유형 2 10 nm 두께); 205: 절연 층(PECVD에 의해 증착된 SiO2 1000 nm 두께); 206: 금속 컨택(TiN 확산 장벽, W 충진). 구조 (a)는 SiN/SiO 스택 형성을 나타내고, 구조 (b)는 계단 형성을 나타내고, 구조 (c)는 희생 층 SiN 증착을 나타내고, 구조 (d)는 SiN(NF3/SF6 라디칼 식각)의 상부 잔류 식각을 나타낸다. 도 8b는 최종 구조까지 추가 처리를 나타낸다.
도 9는 불소 라디칼을 사용하여 스페이서 한정 이중 패터링(SDDP) 또는 측벽 스페이서를 형성함에 있어서 개략적이고 단순화된 공정 시퀀스((a)→(b)→(c)→(d))를 예시로서 나타낸다. 도 8과 유사하게, 측면 잔류 SiN 막이 필요한 응용예도 있다. 측벽 상에 증착된 SiN 막의 일부의 막 밀도 및/또는 품질이 상부 및 하부 상에 증착된 것보다 더 높음을 보장함으로써, 불소 라디칼을 사용하는 경우에 상단부/하단부에 대한 측벽 부분의 식각 선택도가 달성될 수 있다. 조성 차이를 조정하여, 잔류 막의 원하는 두께 및 특성을 달성할 수 있다. 이 기술은 측면 벽 스페이서 형성 또는 스페이서 한정 이중 패턴(SDDP)에 효과적으로 사용될 수 있다. 전형적인 층뿐만 아니라, 층의 전형적인 치수가 예시로서 다음과 같이 표시된다: 300: 기판 재료; 301: 코어 재료; 302: SiN(상부 막 품질(조성 및/또는 밀도)과 상이한 수직 막). 수평 표면(상부, 하부) 상의 막(SiN 302)의 품질은, 수직 표면(측벽)에서의 것보다 상당히 낮다. 이러한 품질 차이(예를 들어, 내화학성의 차이는 밀도 및/또는 조성 등의 차이에 기인할 수 있음)는, 불소 라디칼을 사용하는 경우에 측벽 부분에 대해 상단부의 선택적 식각을 초래한다. 구조 (b)는 패턴 형성을 나타내고, 구조 (c)는 희생 층 SiN 증착을 나타내고, 구조 (d)는 PR 전력을 이용한 NF3 RPU에 의해 SiN의 측면 잔류(상부/하부 우세) 식각을 나타내고(예를 들어, SiO2에 대한 SiN의 높은 식각 선택도, 가령 1000 초과의 값이 얻어짐), 구조 (e)는 코어 식각(선택 사양)을 나타낸다.
도 10은 진공을 파괴하지 않고 클러스터 툴에서 증착과 식각을 조합한 연속 공정 계획을 단순화하여 나타낸다. 이러한 공정 계획은 도 23에서 (a)에 나타낸 것과 실질적으로 동등하며, 여기서 단계(S1, S2, S3, S4, 및 S5)는 도 23에서 (a)의 단계(S11, S12, S13, S14, 및 S15)에 각각 상응하나, 다만 증착된 막이 도 10에서 SiN으로 특히 구성되는 반면에 증착된 막은 도 23에서 금속 화합물로 구성되는 점은 제외한다. 도 23의 (b)에 나타낸 공정 계획은 또한 SiN 막에 적용될 수 있다.
당업자는 본 장치가 본원의 다른 곳에서 기술된 증착 공정 및 반응기 세정 공정의 수행이 일어나도록 프로그래밍되었거나 달리 구성된 하나 이상의 제어기(들)(미도시)를 포함함을 이해할 것이다. 제어기(들)는, 당업자가 이해하는 바와 같이, 다양한 전력원, 가열 시스템, 펌프, 로보틱스, 및 반응기의 가스 흐름 제어기 또는 밸브들과 통신한다.
본 발명은 아래의 실행 실시예를 참조하여 더 설명된다. 그러나, 이러한 실시예는 본 발명을 제한하고자 하는 것은 아니다. 조건 및/또는 구조가 명시되지 않는 본 실시예에서, 당업자는 통상적인 실험에 따라 본 개시의 관점으로 이러한 조건 및/또는 구조를 쉽게 제공할 수 있다. 예를 들어, 다음의 예시에서, TiO2, TiN 등으로 구성된 유전체 막을 증착하기 위해 사용되는 임의의 적절한 전구체, 예컨대 2017년 1월 31일에 발행된 미국 특허 제9,556,516호 및/또는 2015년 10월 27일에 발행된 미국 특허 제9,171,716호에 개시된 것들로서, 당업자에 의해 통상적인 실험물로서 선택되고 사용될 수 있으며, 이의 각각의 개시는 그 전체가 참조로서 본원에 포함된다. 또한 예를 들어, 다음의 예시에서, SiO2, SiN 등으로 구성된 유전체 막을 증착하기 위해 사용된 임의의 적절한 전구체, 예컨대 2012년 6월 12일에 발행된 미국 특허 제8,197,915호 및/또는 2017년 11월 21일에 발행된 미국 특허 제9,824,881호에 개시된 것들로서, 당업자에 의해 통상적인 실험물로서 선택되고 사용될 수 있으며, 이의 각각의 개시는 그 전체가 참조로서 본원에 포함된다. 또한, 특정 실시예에 적용된 수치들은 일부 구현예에서 적어도 ±50%의 범위로 수정될 수 있으며, 이러한 수치들은 근사치이다.
실시예
참조예 1
다음 증착 조건 하에서 PEALD에 의해 TiO2 막을 각 기판 상에 증착하였다:
플라즈마: O2 플라즈마 (반응 가스: O2 1000 sccm; 전력: 192 W, 13.56 MHz); 증착 온도: 190°C; 증착 압력: 250 Pa; 막 두께: 24 nm.
다음으로, TiO2 막을 갖는 기판 중 하나를 100°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시키고, TiO2 막을 갖는 기판 중 다른 하나를 200°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. NF3 원격 플라즈마 유닛(PRU)은 다음 조건(이하 "XP5"로 지칭함)으로 설정하였다:
Figure pat00002
전력: 900 W
Figure pat00003
주파수: 13.56 MHz
Figure pat00004
압력: 60 Pa
Figure pat00005
유량: 2.8/200 sccm NF3/Ar
Figure pat00006
온도: 200°C
도 19는, 도 19에 표시된 지속 시간 동안 원격식 플라즈마에 노출될 경우에 각각의 TiO2 막의 식각 두께를 보여주는 그래프이다. 도 19에 나타낸 바와 같이, 건식 식각 속도는 플라즈마(라디칼) 노출 시간 및 식각 온도의 함수인 것으로 확인되었다.
참조예 2
TiO2 막을 참조예 1과 동일한 증착 조건 하에서 PEALD에 의해 기판 상에 증착하였다("TiO-1"로 지칭됨). ALD 공정 동안에 전구체의 공급 시간이 TiO-1에 대해 0.05초이고, TiO-2에 대해 0.4초이고, TiO-1의 막 두께가 24 nm이고, TiO-2의 막 두께가 18 nm인 것을 제외하고는, 참조예 1에서와 동일한 증착 조건 하에서 PEALD에 의해 기판 상에 또 다른 TiO2 막("TiO-2"로 지칭됨)을 증착하였다.
다음 증착 조건 하에서 PEALD에 의해 SiO2 막("SiO-1로 지칭됨")을 각 기판 상에 증착하였다:
플라즈마: O2 플라즈마 (반응 가스: O2; 전력: 500 W, 13.56 MHz); 증착 온도: 200°C; 증착 압력: 400 Pa; 막 두께: 30 nm.
증착 온도가 75°C이고 RF 전력이 50 W인 것을 제외하고는 SiO-1과 동일한 증착 조건 하에서 PEALD에 의해 기판 상에 다른 SiO2 막("SiO-2"로 지칭됨)을 증착하였다.
다음으로, TiO-1, TiO-2, SiO-1, 및 SiO-2를 갖는 기판을 40초 동안 200°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. NF3 PRU는 XP5 조건에서 설정하였다.
도 20은 각각의 TiO-1, TiO-2, SiO-1, 및 SiO-2의 식각 두께를 보여주는 그래프이다. 도 20에 나타낸 바와 같이, 식각 선택도는 재료 조성(SiO 또는 TiO) 및 품질(-1 또는 -2)에 따라 달라지는 것으로 확인되었는데, 이는 식각 선택도가 증착 조건을 변경하고/변경하거나 조성을 선택함으로써 조절될 수 있고, 이에 따라 식각 선택도의 광범위한 조작이 가능함을 나타낸다.
실시예 1
TiO2 막을 참조예 1에서와 동일한 방식으로 PEALD에 의해 트렌치를 갖는 기판 상에 증착하였다. 이러한 TiO2 막은 참조예 2의 TiO-1에 상응한다. 도 21a는, 예시로서, 상부/하부 잔류 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 전에 패터닝된 구조 상에 형성된 티타늄 산화물 막(TiO-1)의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 도 21a에 나타낸 바와 같이, TiO-1은 상부-우세 증착 계획으로 증착되었다.
다음으로, TiO-1 막을 갖는 기판을 200°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. NF3 원격 플라즈마 유닛(PRU)을 XP5 조건에서 설정하였다. 도 21b는, 예시로서, 상부 잔류 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 후에 패터닝된 구조 상에 형성된 티타늄 산화물 막(TiO-1)의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 도 21b에 나타낸 바와 같이, NF3 라디칼 식각은 등각성 식각이었으나, 식각 효과에서는 선택적이었고, 여기서 TiO2는 식각되는 반면에 하부 Si는 식각되지 않았다(이는 공정 가스에 산소를 첨가함으로써 층간 산화물에 의해 추가로 보호될 수 있음). NF3 라디칼 식각은 등각성 식각이기 때문에, 상기 상부 우세 증착 계획은 최종 층 구조의 토폴로지 프로파일에 강하게 영향을 끼쳤고, 이는 상부 잔류 토폴로지 프로파일로서, 상기 트렌치 내 및 상기 상부 표면 상에 증착된 TiO-1 막의 모든 부분은 실질적으로 균등하게 또는 균일하게 식각되고, 상기 트렌치의 하부 및 측벽 상에 남아 있는 막이 실질적으로 없는 반면에, 상부 표면 상의 막의 부분은 상부 표면 상의 부분의 두께가 소정의 동일한 정도로 감소하였지만 여전히 남아 있었다. 본 예시는, 최종 층 구조의 상부 잔류 토폴로지 프로파일이, 등각성 식각 계획에 따른 막의 라디칼 식각과 조합하여 상부 우세 증착 계획에 따라 막을 증착함으로써 달성될 수 있음을 나타낸다.
실시예 2
TiO2 막을 참조예 2에서와 동일한 방식으로 PEALD에 의해 트렌치를 갖는 기판 상에 증착하였다. 이러한 TiO2 막은 참조예 2의 TiO-2에 상응한다. 도 22a는, 예시로서, 등각성 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 전에 패터닝된 구조 상에 형성된 티타늄 산화물 막(TiO-2)의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 도 22a에 나타낸 바와 같이, TiO-2은 등각성 증착 계획으로 증착되었다.
다음으로, TiO-2 막을 갖는 기판을 200°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. NF3 원격 플라즈마 유닛(PRU)을 XP5 조건에서 설정하였다. 도 22b는, 예시로서, 등각성 토폴로지 프로파일을 갖는 층 구조를 형성하기 위해 불소 라디칼 식각 후에 패터닝된 구조 상에 형성된 티타늄 산화물 막(TiO-2)의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 도 22b에 나타낸 바와 같이, NF3 라디칼 식각은 등각성 식각이었으나, 식각 효과에서는 선택적이었고, 여기서 TiO2는 식각되는 반면에 하부 Si는 식각되지 않았다(이는 공정 가스에 산소를 첨가함으로써 층간 산화물에 의해 추가로 보호될 수 있음). NF3 라디칼 식각은 등각성 식각이기 때문에, 상기 등각성 증착 계획은 최종 층 구조의 토폴로지 프로파일에 강하게 영향을 끼쳤고, 이는 등각성 토폴로지 프로파일로서, 상기 트렌치 내 및 상기 상부 표면 상에 증착된 TiO-2 막의 모든 부분은 실질적으로 균등하게 또는 균일하게 식각되고, 상기 막 상의 모든 부분의 두께가 소정의 동일한 정도로 감소하였지만 등각성 토폴로지 프로파일을 갖는 최종 층 구조를 생성하였다. 본 예시는, 최종 층 구조의 등각성 토폴로지 프로파일이, 등각성 식각 계획에 따른 막의 라디칼 식각과 조합하여 등각성/균일한 품질 증착 계획에 따라 막을 증착함으로써 달성될 수 있음을 나타낸다.
TiO-1 및 TiO-2는 도 20에 나타낸 바와 같이 사용된 식각 조건에 대해 유사한 식각 속도를 가졌지만, 증착 공정 파라미터 중 적어도 하나(여기서, 전구체의 공급 시간)를 변화시킴으로써, 도 21a(상부 우세 증착) 및 도 22a(등각성 증착)에 나타낸 바와 같이 증착 프로파일이 상이하게 만들어졌다. 조건 및/또는 구조가 본원에 명시되지 않는 다른 증착 프로파일을 형성하기 위해서, 당업자는 일상적인 실험에 따라 본 개시의 관점으로 부담 없이 이러한 조건 및/또는 구조를 쉽게 제공할 수 있다. 등각성 식각(라디칼 식각)과 조합하여, 상이한 증착 프로파일은 도 21b 및 도 22b에 관찰된 바와 같이 상이한 토폴로지 프로파일을 생성한다.
참조예 3
다음 증착 조건 하에서, 다양한 SiN 막(SiN-1 내지 SiN-7) 및 SiO 막을 기판 상에 각각 증착하였다:
SiN-1(PEALD): 증착 온도 450°C; 증착 압력: 3,000 Pa; 플라즈마: N2 플라즈마(반응 가스: N2; 전력: 880 W, 13.56 MHz; 플라즈마 지속시간: 3.3초); 막 두께: 35 nm.
SiN-2(PEALD): 증착 온도 450°C; 증착 압력: 350 Pa; 플라즈마: N2 플라즈마(반응 가스: N2; 전력: 880 W, 13.56 MHz; 플라즈마 지속시간: 3.3초); 막 두께: 50 nm.
SiN-3(PEALD): 증착 온도 100°C; 증착 압력: 350 Pa; 플라즈마: N2 플라즈마(반응 가스: N2; 전력: 115 W, 13.56 MHz; 플라즈마 지속시간: 3.3초); 막 두께: 30 nm.
SiN-4(PEALD): 증착 온도 450°C; 증착 압력: 4 토르; 플라즈마: NH3 플라즈마(반응 가스: NH3; 전력: 100 W, 13.56 MHz); 막 두께: 45 nm.
SiN-5(PEALD): 증착 온도 450°C; 증착 압력: 3 토르; 플라즈마: NH3 플라즈마(반응 가스: NH3; 전력: 125 W); 막 두께: 50 nm.
SiN-6(PRU): 원격 CCP 플라즈마를 사용한 것을 제외하고는 SiN-1에 대한 것과 동일하였다.
SiN-7(LPCVD-SiN; 표준 또는 기준 SiN 막).
SiO(PEALD): SiO-1(참조예 2)에 대한 것과 동일함; 막 두께: 40 nm.
SiN-1, SiN-2, SiN-3, 및 SiN-6은 동일한 제1 전구체를 사용하였고, SiN-4 및 SiN-5는 제1 전구체와 상이한 동일한 제2 전구체를 사용하였다. 증착된 SiN 막의 두께는 25 nm 내지 55 nm 범위였고, 이는 상이한 전구체 및 플라즈마 조건을 갖는 다른 공정 또는 PEALD에 의해 각각 증착되었다. SiN 막(SiN-7)의 표준 샘플을 저압 CVD에 의해 NH3 및 SiH2Cl2로 증착하였다. SiN-7 막의 밀도는 3.18 g/cm3이었다. 여기서의 핵심은 각각의 막이 상이한 밀도 및/또는 상이한 수소 함량 등을 가졌고, 이들 차이는 그의 식각 속도 및/또는 RI(굴절률)를 결정하였다는 것이다. 따라서, 막의 RI는 (도 4a 및 4b에 관련하여 논의된 바와 같이) 식각 속도를 추정하는 데 사용될 수 있다. 조건 및/또는 구조가 본원에 명시되지 않는 이들 막을 증착하기 위해서, 당업자는 일상적인 실험에 따라 본 개시의 관점으로 과도한 부담 없이 이러한 조건 및/또는 구조를 쉽게 제공할 수 있다.
다음으로, 상기 SiN 막을 갖는 각각의 기판을, 챔버 온도가 25°C인 것을 제외하고는 XP5 조건 하에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. SiO 막을 갖는 기판을 NF3 라디칼 대신에 SF6 라디칼에 노출시켰다. SF6 라디칼뿐만 아니라 NF3 라디칼도 SiO 막에 작용한다는 것이 별도의 실험에서 확인되었음을 주목해야 한다.
도 1은, NF3 원격식 플라즈마 노출 시간과 관련하여 상기 상이한 막의 식각 두께를 보여주는 그래프이다. 도 1에서, 상이한 막 밀도 및/또는 상이한 조성을 갖는 다양한 SiN 막의 식각 두께 및 SiO 막의 식각 두께는, NF3 원격 플라즈마 노출 시간의 함수로서 도표화된다. 도 1에 나타낸 바와 같이, 건식 식각 속도는 플라즈마(라디칼) 노출 시간 및 막 품질의 함수인 것으로 확인되었고, 막 품질을 조절함으로써, 막의 건식 식각 속도를 조절하고 타겟층 구조를 형성하기 위해 하나의 막에 대해 하나의 막의 적절한 식각 선택도를 설정할 수 있다.
TiO2, ZrO2 등으로 구성된 막은, SiO2와 유사한 방식으로 PEALD에 의해 증착되었고, SiO2의 것과 유사한 식각 선택도를 나타내었음을 주목해야 한다. 도 13은, 원격식 플라즈마 노출되는 경우에 상이한 산화물 막의 식각 두께를 보여주는 그래프이다.
비교예 1
SiN-1 내지 SiN-6 및 SiO의 막은, 참조예 3에서와 동일한 방식으로 기판 상에 각각 형성되었고, 이어서 참조예 3에서 사용된 라디칼 건식 식각 대신에, 막을 습식 식각(dHF 100:1)하였다.
도 2는, HF 습식 식각 노출 시간과 관련하여 상이한 SiN 막과 SiO 막의 식각 두께를 보여주는 그래프이다. 알 수 있는 바와 같이, NF3 원격식 플라즈마에 대한 SiN 식각 속도는, 습식 식각 속도와 매우 비슷하였다. 또한, NF3 원격식 플라즈마 식각은 선택적이어서, SiO2는 도 1에 나타낸 바와 같이 식각되지 않은 반면에, HF는 도 2에 나타낸 바와 같이 SiO2를 식각하였다.
참조예 4
도 3은, 도 1 및 도 2를 기준으로, 막 SiN-1의 식각된 두께와 비교하여(참조하여) NF3 원격식 플라즈마 식각에서 상기 논의된 상이한 SiN 막의 식각 선택도를 다시 도표화한 그래프이다. 기준 SiN 막에 대한 하나의 SiN 막의 식각 선택도는, 기준 건식 식각 조건 하에서 기준 SiN 막의 식각 속도(또는 식각 두께)에 대한 하나의 SiN 막의 식각 속도(또는 식각 두께)의 비율로 정의된다. 여기서, SiN-1 막을 기준 SiN 막으로서 선택하였다. 도 3에 도시된 바와 같이, SiN-1 막에 대한 SiN 막의 식각 선택도는, SiN-2 내지 SiN-6에 대한 증착 조건을 변화시키는 방식으로 증착 조건을 조절함으로써 조정될 수 있다(SiN 막과 SiN-1 막 간의 조성 차이, 구조적 차이, 물리적 차이, 화학적 차이 등을 초래함). 도 3에 나타낸 바와 같이, SiN 막의 식각 선택도는 NF3 라디칼 식각에 의해 1 내지 50의 범위로 조정될 수 있다. SiO2 막은 NF3 라디칼 식각에 의해 (오차 한계 이내에서) 실질적으로 식각되지 않았으므로, SiO2 막을 기준 막으로서 사용하는 경우에 SiN 막의 식각 선택도는 SiN-1에 대해 적어도 5이고 SiN-2에 대해 적어도 100이었다(즉, SiN-2는 SiO2보다 적어도 100배 더 빠르게 식각됨).
NF3 대신에 원격식 마이크로파 플라즈마(2.45 GHz, 50 W, 2 Pa)에서 생성된 SF6을 사용하여, SiN 막 사이의 식각 속도의 차이가 최대 100까지 더 증가될 수 있다. SiO2 또는 다른 산화물에 대한 SiN 막의 식각 선택도는, (측정 오차를 고려한 후에) SiN-1의 경우 적어도 25, SiN-2의 경우 적어도 4000이었다. 실험 지속 시간이 길수록, 측정 오차가 낮아지고, 이는 식각 선택도가 완벽(무한)에 가까울 가능성이 높다는 것을 의미함을 주목해야 한다.
참조예 5
참조예 3에 설명된 SiN-1 내지 SiN-7로 각각 구성된 SiN 막에 대한 추가 분석을 실시하였고, 이들의 굴절률을 측정하였다. 도 4a는 상이한 막의 굴절 지수에 대한 막 SiN-1의 식각 속도와 비교하여(참조하여) NF3 원격식 플라즈마 식각에 의한 상이한 SiN 막의 식각 속도를 보여주는 그래프이다. 도 4a에 나타낸 바와 같이, 라디칼에 의한 SiN 막의 굴절률 및 이의 건식 식각 속도는 강한 상관 관계(특히, 약 1.95 이하의 굴절률 범위 내에서 굴절률이 감소하는 경우에 식각 속도는 NF3 원격 플라즈마에 대해 선형으로 증가함)를 갖고, 막의 건식 식각 특성은 막 조성 및 밀도 등에 기인하고 이와 연관되기 때문에, 굴절률은 이들의 조성 및 밀도 등을 평가하기 위한 간접 측정으로서 사용될 수 있음을 이해한다. 예를 들어, 다른 막의 것보다 낮은 밀도 및/또는 낮은 품질(열등한 조성)을 갖는 막은, 다른 막의 것보다 낮은 굴절률을 생성한다. 따라서, SiN-6 막의 밀도는 단지 3.18 g/cm3인 것으로 알려져 있지만, SiN-6 막의 것보다 더 낮은 굴절률을 갖는 다른 SiN 막은, SiN-6 막의 것보다 더 낮은 밀도 및/또는 더 낮은 품질(열등한 조성)을 갖는다고 합리적으로 결정할 수 있다.
도 4b는, 상이한 막의 굴절 지수에 대한 막 SiN-1의 식각 속도와 비교하여(참조하여) HF 습식 식각에 의해 상이한 SiN 막(비교예 1에 설명된 바와 같은 SiN-1 내지 SiN-6)의 식각 속도를 보여주는 그래프이다. 도 4b에서 알 수 있는 바와 같이, HF 습식 식각의 경우에 굴절률에 대한 식각 속도의 의존성은, NF3 원격식 플라즈마 식각에 대한 것보다 간단하거나 선형적이지 않았고, 샘플 간의 더 많은 변화가 관찰되었다.
참조예 6
참조예 3에 설명된 SiN-1 내지 SiN-6으로 각각 구성된 SiN 막에 대한 추가 분석을 실시하였고, 이들의 조성/밀도를 분석하였다. 도 5는, 상이한 조성 및 밀도의 상이한 SiN 막의 푸리에 변환 적외선(FTIR) 스펙트럼(컬러)이며, 소광 계수(막의 두께에 대해 정규화된 흡광도)는 파수에 대해 도표화된다. 각 막에서 Si-N, N-H, Si-H, CO2 결합의 존재와 관련된 흡수 피크는, 도 5에 표시되어 있다. Si-N 피크의 상이한 면적 크기는 막 사이의 밀도 차이를 나타내는 반면에, N-H 결합 등의 존재는 이들의 조성에서의 차이를 나타낸다. 모든 결합이 FTIR에 의해 측정될 수 있는 것은 아니며, 이는 조성 차이의 완전한 그림을 제공하지 않는다는 것을 의미함을 주목해야 한다.
도 6은, 도 5에 나타낸 바와 같이 SiN 막의 식각 속도 및 Si-N 피크 면적 크기 간의 관계를 보여주는 그래프이다. 데이터는 SiN 막의 Si-N 결합의 양이 낮을수록(밀도가 낮을수록), 식각 속도가 더 높아짐을 보여준다. 따라서, SiN 막에서 Si-N 결합의 양을 (다양한 증착 공정 파라미터에 의해) 변화시킴으로써, SiN 막의 식각 속도가 조정될 수 있다. 당업자는 과도한 부담 없이 일상적인 실험의 일환으로서, 특히 본원에 개시된 지침에 따라 본 개시의 관점에서 증착 조건을 조절함으로써 식각 속도를 조정할 수 있다.
실시예 3
SiN-4 막을 참조예 3에서와 동일한 방식으로 PEALD에 의해 트렌치(250 nm 깊이, 150 nm 개방 폭)를 갖는 기판 상에 증착하였다. 기판의 상부 표면 상의 SiN-4 막의 두께는 26 nm였다. 또한, SiN-3 막을 참조예 3에서와 동일한 방식으로 PEALD에 의해 트렌치(250 nm 깊이, 150 nm 개방 폭)를 갖는 기판 상에 증착하였다. 기판의 상부 표면 상의 SiN-3 막의 두께는 29 nm였다. SiN-4 막을 사용하는 최종 층 구조의 타겟 토폴로지 프로파일은, 측면 잔류 토폴로지 프로파일인 반면에, SiN-3 막을 사용하는 최종 층 구조의 타겟 토폴로지 프로파일은, 상부/하부 잔류 토폴로지 프로파일이었다.
SiN-4 막에 대한 증착 조건은 다음과 같이, 본 개시에서 논의된 바와 같이 공정 파라미터를 조작함으로써, 상부/하부 저품질(저밀도) 증착을 수행하도록 조정되었다:
(i) 기준 증착 조건 및 기준 건식 식각 조건(여기서는 등각성 식각을 위한 조건 XP5)을 제공하는 단계(여기서, 기준 증착 조건 하에서 PEALD 증착 공정을 수행하고 조건 XP5 하에서 라디칼 식각 공정을 수행하여, 기판의 트렌치를 갖는 표면 상에 기준 토폴로지 프로파일을 갖는 SiN 막이 형성되었음);
(ii) 이렇게 획득된 기준 토폴로지 프로파일을 타겟 토폴로지 프로파일과 비교할 시, 기준 토폴로지 프로파일보다 타겟 토폴로지 프로파일에 보다 가깝게 기판 상의 토폴로지 프로파일을 갖는 층 구조를 형성하는 방식(예, RF 전력 증가 및/또는 공정 압력 감소, 및/또는 상기 전구체 및/또는 상기 반응 가스의 변경)으로 기준 증착 조건 중 적어도 하나의 파라미터를 변화시키는 단계, 및 변경된 증착 조건(건식 식각 조건, 조건 XP5는 변하지 않음) 하에서 PEALD 증착 공정 및 라디칼 식각 공정을 수행하는 단계; 및
(iii) 이렇게 수득된 토폴로지 프로파일이 상기 타겟 토폴로지 프로파일과 실질적으로 근접하거나 동등할 때까지, 단계 (ii)를 반복하는 단계.
유사하게, SiN-3 막에 대한 증착 조건은 본 개시에서 논의된 바와 같이 공정 파라미터를 조작함으로써, 측면 저품질(저밀도) 증착을 수행하도록 조정되었다.
다음으로, SiN-4 막 및 SiN-3 막을 갖는 기판을 각각 25°C의 온도에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. NF3 원격 플라즈마 유닛(PRU)을 XP5 조건에서 설정하였다.
도 12a는, 예시로서 상부/하부 제거 계획에 따라 불소 라디칼 식각 후 패터닝된 구조 상에 형성된 SiN-4 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 도 12b는, 측면 제거 계획에 따라 불소 라디칼 식각 후 패터닝된 구조 상에 형성된 SiN-3 막의 단면도의 주사 전자 현미경(SEM) 사진을 나타낸다. 이들은, 증착 조건 및/또는 증착된 막의 측면 부분과 상단부 사이의 품질(예, 밀도) 차이를 조절함으로써, 건식 식각 후의 최종 층 구조의 토폴로지 프로파일을 조절할 수 있음을 보장한다.
실시예 4 내지 6
도 18b에 나타낸 증착 조건 하에서 PEALD에 의해 트렌치를 갖는 기판 상에 SiN 막 A, B, 및 C를 각각 증착하였다. 각각의 SiN 막의 막 두께를 도 18a에 나타냈다. 도 18a는 또한 SiN 막("증착상태")의 단면 주사 투과 전자 현미경(STEM) 사진을 나타낸다. 도 18a에 나타낸 바와 같이, SiN 막 A는 등각성(89%)인 반면, SiN 막 B 및 C(각각 67% 및 60%의 등각성)는 상부 우세이다. 또한, SiN 막 A 그리고 SiN 막 B 및 C를 측면 저품질 계획 및 상부/하부 저품질 계획에 따라 각각 증착하였으므로, 등각성(등방성) 건식 식각에 노출된 후에 SiN 막 A는 상부 잔류 토폴로지 프로파일을 갖는 반면에, SiN 막 B 및 C는 측면 잔류 토폴로지 프로파일을 갖는다. SiN 막 B와 C 사이의 차이는 막이 증착되는 트렌치의 개방 폭이었고, 여기서 SiN 막 B와 C의 증착 조건은 동일하였지만, 로딩 효과로 인해 막의 등각성은 상이하였다.
다음으로, SiN 막 A, B, 및 C를 도 18b에 나타낸 건식 식각 조건 하에서 NF3 원격 CCP 플라즈마(NF3 라디칼)에 노출시켰다. 최종 층 구조는 도 18a("건식 식각후")에 나타나 있다. 도 18a에 나타낸 바와 같이, SiN 막 A, B, 및 C를 등각성(등방성) 건식 식각에 노출시킴으로써, 이들의 등각성은 89%에서 44%("등각성"에서 "상부 잔류")로, 67%에서 132%("상부 우세"에서 "측면 잔류")로, 및 60%에서 132%("상부 우세"에서 "측면 잔류")로 각각 변하였고, 이는 상기 측벽 상에 증착된 막의 측면 부분과 상기 트렌치의 상부/하부 상에 증착된 막의 횡방향 부분(막 A에서의 "측면-저 품질", 막 B 및 C에서 "상부/하부-저 품질") 사이의 막 품질(밀도 또는 식각 속도)의 차이에 기인하고, 각 막의 측면 부분과 횡방향 부분 사이의 식각 선택도(또는 식각 속도 선택도)의 차이를 초래한다. 이들은, 증착 조건 및/또는 증착된 막의 측면 부분과 횡방향 부분 사이의 품질(예, 밀도) 차이를 조절함으로써, 건식 식각 후 최종 층 구조의 토폴로지 프로파일을 조절할 수 있음을 보장한다.
당업자는 본 발명의 사상을 벗어나지 않고, 다수의 그리고 다양한 변형이 이루어질 수 있음을 이해할 것이다. 따라서, 본 발명의 형태는 단지 예시적인 것이며 본 발명의 범주를 한정하도록 의도된 것이 아니라는 것을 분명히 이해해야 한다.

Claims (15)

  1. 측면 및 횡방향 면을 갖는 단차에서 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법으로서,
    (a) 제1 증착 조건 하에서 상기 기판의 미리 선택된 영역 상에 유전체 층을 증착하는 공정(상기 유전체 층은, 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 대한 저항성이 조정된 부분을 가짐); 및
    (b) 공정 (a)에서 수득된 상기 유전체 층을 상기 제1 건식 식각 조건 하에서 불소 및/또는 염소 라디칼에 노출시킴으로써 상기 유전체 층 부분의 적어도 일부를 제거하고, 이에 의해 상기 기판 상에 상기 타겟 토폴로지 프로파일을 갖는 층 구조를 형성하는 공정을 포함하는, 방법.
  2. 제1항에 있어서, 상기 유전체 층이 상기 기판 상에 증착된 제1 유전체 층, 및 상기 제1 유전체 층 상에 증착되고 이와 접촉하는 제2 유전체 층으로 구성되고, 상기 제2 유전체 층은 상기 제1 유전체 층에 대해 상기 제2 유전체 층의 식각 선택도가 5 이상인 방식으로 불소 및/또는 염소 라디칼에 대해 조정된 저항성을 갖고, 상기 식각 선택도는 상기 제1 건식 식각 조건 하에서 상기 제1 유전체 층의 식각 속도에 대한 상기 제2 유전체 층의 식각 속도의 비율로 정의되는, 방법.
  3. 제2항에 있어서, 상기 제1 유전체 층은 산화물 막으로 구성되고, 상기 제2 유전체 층은 실리콘 질화물 막으로 구성되는, 방법.
  4. 제2항에 있어서, 상기 제1 유전체 층 및 상기 제2 유전체 층은 동일한 유형이되 상기 제1 및 제2 유전체 층을 구성하는 일차 화학적 결합은 동일한, 방법.
  5. 제1항에 있어서, 상기 측면 상에 증착된 유전체 층의 제1 부분, 및 상기 횡방향 면 상에 증착된 유전체 층의 제2 부분이, 상기 제1 및 제2 부분 중 하나의 식각 선택도가 상기 제1 건식 식각 조건 하에서 상기 제1 및 제2 부분 중 다른 것의 식각 속도보다 낮은 식각 속도를 갖고 1.5 이상인 방식으로, 불소 및/또는 염소에 대해 상이한 저항성을 갖되, 상기 제1 및 제2 부분 중 하나의 식각 선택도는, 상기 제1 건식 식각 조건 하에서 상기 제1 및 제2 부분 중 하나의 식각 속도에 대한 상기 제1 및 제2 부분 중 다른 하나의 식각 속도의 비율로 정의되는, 방법.
  6. 제1항에 있어서, 상기 측면 상에 증착된 유전체 층의 일부 및 상기 횡방향 면 상에 증착된 유전체 층의 일부가 상이한 두께를 갖는, 방법.
  7. 제1항에 있어서, 상기 타겟 토폴로지 프로파일은 측면 잔류 토폴로지 프로파일, 횡방향 면 잔류 토폴로지 프로파일, 또는 등각성 토폴로지 프로파일인, 방법.
  8. 제1항에 있어서, 공정 (a) 및 공정 (b)는 동일한 챔버에서 수행되는, 방법.
  9. 제8항에 있어서, 상기 불소 및/또는 염소 라디칼은 불소와 질소를 함유한 가스 및 귀가스로부터, 원격식으로 또는 동일한 챔버 내에서 생성된 불소 라디칼인, 방법.
  10. 제1항에 있어서, 공정 (a)를 시작하기 전에,
    (i) 기준 증착 조건 및 기준 건식 식각 조건을 제공하는 단계(상기 조건 하에서 공정 (a) 및 공정 (b)를 수행함으로써, 기준 토폴로지 프로파일을 갖는 층 구조가 상기 기판 상의 단차에 형성됨);
    (ii) 이렇게 수득된 상기 기준 토폴로지 프로파일을 상기 타겟 토폴로지 프로파일과 비교할 시, 상기 기판 상의 단차에서 토폴로지 프로파일을 갖는 층 구조를 형성하는 방식으로, 상기 기준 증착 조건 중 적어도 하나의 파라미터 및/또는 상기 기준 건식 식각 조건 중 적어도 하나의 파라미터를 변경하는 단계(상기 토폴로지 프로파일은 상기 기준 토폴로지 프로파일보다 상기 타겟 토폴로지 프로파일에 보다 유사함);
    (iii) 상기 변경된 증착/건식 식각 조건 하에서 공정 (a) 및 공정 (b)를 수행하는 단계; 및 선택적으로
    (iv) 이렇게 수득된 상기 토폴로지 프로파일이 상기 타겟 토폴로지 프로파일과 실질적으로 동등해질 때까지 (ii) 및 (iii) 단계를 반복하는 단계를 추가로 포함하는, 방법.
  11. 제10항에 있어서, 단계 (ii)에서 변경된 기준 증착 조건 중 적어도 하나의 파라미터는, 공정 (a)가 수행되는 반응 공간에서의 플라즈마 전력, 가스 선택, 가스 유량, 압력 및 온도 중 적어도 하나인, 방법.
  12. 제10항에 있어서, 단계 (ii)에서 변경된 상기 기준 건식 식각 조건 중 적어도 하나의 파라미터는, 공정 (b)가 수행되는 반응 공간의 적어도 온도인, 방법.
  13. 제1항에 있어서, 상기 측면 및 상기 횡방향 면을 갖는 단차는, 상기 측면으로서 측벽을 갖고, 상기 횡방향 면으로서 하부면 및 상부면으로 구성되는, 방법.
  14. 제1항에 있어서, 상기 측면 및 상기 횡방향 면을 갖는 단차는, 상기 측면으로서 깊이 방향 면과 상기 횡방향 면으로서 높이 방향 하부 및 상부면을 갖는 수평 오목부를 구비한 3D NAND 구조의 일부인, 방법.
  15. 제1항에 있어서, 상기 측면 및 상기 횡방향 면을 갖는 단차는, 상기 측면으로서 높이 면을 갖고, 상기 횡방향 면으로서 깊이 면을 갖는 계단의 일부인, 방법.
KR1020210027117A 2020-03-12 2021-03-02 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 KR20210117157A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202062988907P 2020-03-12 2020-03-12
US62/988,907 2020-03-12

Publications (1)

Publication Number Publication Date
KR20210117157A true KR20210117157A (ko) 2021-09-28

Family

ID=77617313

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020210027117A KR20210117157A (ko) 2020-03-12 2021-03-02 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법

Country Status (4)

Country Link
US (2) US11961741B2 (ko)
KR (1) KR20210117157A (ko)
CN (1) CN113394086A (ko)
TW (1) TW202139267A (ko)

Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210132605A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리
TW202140831A (zh) 2020-04-24 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含氮化釩層及包含該層的結構之方法
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理方法
KR20220010438A (ko) 2020-07-17 2022-01-25 에이에스엠 아이피 홀딩 비.브이. 포토리소그래피에 사용하기 위한 구조체 및 방법
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於沉積鉬層之方法及系統
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
KR20220076343A (ko) 2020-11-30 2022-06-08 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (5027)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3089507A (en) 1963-05-14 Air eject system control valve
FR686869A (fr) 1930-12-31 1930-07-31 Jacob Ets Robinet mélangeur
GB400010A (en) 1931-10-05 1933-10-19 Johann Puppe Improvements in and connected with ingot moulds
US2059480A (en) 1933-09-20 1936-11-03 John A Obermaier Thermocouple
US2161626A (en) 1937-09-25 1939-06-06 Walworth Patents Inc Locking device
US2240163A (en) 1938-09-30 1941-04-29 Permutit Co Valve apparatus for controlling hydraulic or pneumatic machines
US2266416A (en) 1939-01-14 1941-12-16 Western Electric Co Control apparatus
US2280778A (en) 1939-09-29 1942-04-28 John C Andersen Garden tool
US2410420A (en) 1944-01-01 1946-11-05 Robert B Bennett Scraper
US2441253A (en) 1944-10-30 1948-05-11 Rohim Mfg Company Inc Valve
US2563931A (en) 1946-04-02 1951-08-14 Honeywell Regulator Co Rate responsive thermocouple
US2480557A (en) 1946-08-02 1949-08-30 Harry S Cummins Detachable thermocouple housing
US2660061A (en) 1949-03-05 1953-11-24 Dominion Eng Works Ltd Immersion type thermocouple temperature measuring device
US2745640A (en) 1953-09-24 1956-05-15 American Viscose Corp Heat exchanging apparatus
GB752277A (en) 1953-10-28 1956-07-11 Canadian Ind 1954 Ltd Improved thermocouple unit
US2847320A (en) 1956-05-08 1958-08-12 Ohio Commw Eng Co Method for gas plating with aluminum organo compounds
US3094396A (en) 1959-07-07 1963-06-18 Continental Can Co Method of and apparatus for curing internal coatings on can bodies
US2990045A (en) 1959-09-18 1961-06-27 Lipe Rollway Corp Thermally responsive transmission for automobile fan
US6482262B1 (en) 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US3038951A (en) 1961-01-19 1962-06-12 Leeds & Northrup Co Fast acting totally expendable immersion thermocouple
US3197682A (en) 1961-04-13 1965-07-27 Pure Oil Co Safet electro-responsive-fluid chuck
US3232437A (en) 1963-03-13 1966-02-01 Champlon Lab Inc Spin-on filter cartridge
US3410349A (en) 1964-01-02 1968-11-12 Ted R. Troutman Tubing scraper and method
US3263502A (en) 1964-01-21 1966-08-02 Redwood L Springfield Multiple thermocouple support
FR1408266A (fr) 1964-06-30 1965-08-13 Realisations Electr Et Electro Prise de raccordement pour thermocouples
DE1255646B (de) 1965-02-27 1967-12-07 Hoechst Ag Verfahren zur Gewinnung von Fluor in Form von Calciumsilicofluorid aus salpeter- oder salzsauren Rohphosphataufschluessen
US3332286A (en) 1965-09-02 1967-07-25 Gen Electric Thermocouple pressure gauge
NL6706680A (ko) 1966-06-02 1967-12-04
US3588192A (en) 1969-06-02 1971-06-28 Trw Inc Hydraulic skid control system
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US3647716A (en) 1970-04-03 1972-03-07 Westvaco Corp Transport reactor with a venturi tube connection to a combustion chamber for producing activated carbon
US3634740A (en) 1970-04-20 1972-01-11 Addressograph Multigraph Electrostatic holddown
US4393013A (en) 1970-05-20 1983-07-12 J. C. Schumacher Company Vapor mass flow control system
US3713899A (en) 1970-11-12 1973-01-30 Ford Motor Co Thermocouple probe
US3885504A (en) 1971-01-09 1975-05-27 Max Baermann Magnetic stabilizing or suspension system
US3718429A (en) 1971-03-15 1973-02-27 Du Pont No-no2 analyzer
GB1337173A (en) 1971-05-17 1973-11-14 Tecalemit Engineering Fluid flow control
CA1002299A (en) 1971-06-24 1976-12-28 William H. Trembley Installation tool
US3833492A (en) 1971-09-22 1974-09-03 Pollution Control Ind Inc Method of producing ozone
US3796182A (en) 1971-12-16 1974-03-12 Applied Materials Tech Susceptor structure for chemical vapor deposition reactor
US3862397A (en) 1972-03-24 1975-01-21 Applied Materials Tech Cool wall radiantly heated reactor
FR2181175A5 (ko) 1972-04-20 1973-11-30 Commissariat Energie Atomique
JPS5132766B2 (ko) 1972-07-25 1976-09-14
JPS5539903B2 (ko) 1972-10-19 1980-10-14
DE7242602U (ko) 1972-11-20 1976-04-29 Hoogovens Ijmuiden B.V., Ijmuiden (Niederlande)
DE2427992A1 (de) 1973-06-13 1975-03-13 Thermal Syndicate Ltd Verfahren zum messen hoher temperaturen mit thermoelementen
US3854443A (en) 1973-12-19 1974-12-17 Intel Corp Gas reactor for depositing thin films
DE2407133B2 (de) 1974-02-15 1976-12-09 Deutsche Forschungs- und Versuchsanstalt für Luft- und Raumfahrt e.V., 5300 Bonn Verfahren und vorrichtung zur bestimmung von stickoxid
US3904371A (en) 1974-03-04 1975-09-09 Beckman Instruments Inc Chemiluminescent ammonia detection
US3916270A (en) 1974-05-02 1975-10-28 Tektronix Inc Electrostatic holddown apparatus
SU494614A1 (ru) 1974-05-05 1975-12-05 Специальное Проектно-Конструкторское Бюро "Главнефтеснабсбыта" Усср Устройство дистанционного измерени уровн жидкости
US3997638A (en) 1974-09-18 1976-12-14 Celanese Corporation Production of metal ion containing carbon fibers useful in electron shielding applications
US3887790A (en) 1974-10-07 1975-06-03 Vernon H Ferguson Wrap-around electric resistance heater
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US3962004A (en) 1974-11-29 1976-06-08 Rca Corporation Pattern definition in an organic layer
JPS589954B2 (ja) 1975-02-28 1983-02-23 松下電器産業株式会社 リズムハツセイソウチ
US3983401A (en) 1975-03-13 1976-09-28 Electron Beam Microfabrication Corporation Method and apparatus for target support in electron projection systems
GB1514921A (en) 1975-04-02 1978-06-21 Kanji S Record-playing apparatus
US4054071A (en) 1975-06-17 1977-10-18 Aetna-Standard Engineering Company Flying saw with movable work shifter
US4079944A (en) 1975-12-05 1978-03-21 Durley Iii Benton A Cueing device for phonographs
DE2610556C2 (de) 1976-03-12 1978-02-02 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Verteilen strömender Medien über einen Strömungsquerschnitt
US4048110A (en) 1976-05-12 1977-09-13 Celanese Corporation Rhenium catalyst composition
PL114843B1 (en) 1976-08-13 1981-02-28 Gewerk Eisenhuette Westfalia Coupling member for segments of trough-shaped running track of a chain driven scraper coveyor
USD249341S (en) 1976-11-11 1978-09-12 Umc Industries, Inc. Electro-mechanical pulser
US4194536A (en) 1976-12-09 1980-03-25 Eaton Corporation Composite tubing product
US4181330A (en) 1977-03-22 1980-01-01 Noriatsu Kojima Horn shaped multi-inlet pipe fitting
US4099041A (en) 1977-04-11 1978-07-04 Rca Corporation Susceptor for heating semiconductor substrates
US4164959A (en) 1977-04-15 1979-08-21 The Salk Institute For Biological Studies Metering valve
US4179530A (en) 1977-05-20 1979-12-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the deposition of pure semiconductor material
US4176630A (en) 1977-06-01 1979-12-04 Dynair Limited Automatic control valves
US4126027A (en) 1977-06-03 1978-11-21 Westinghouse Electric Corp. Method and apparatus for eccentricity correction in a rolling mill
US4149237A (en) 1977-09-16 1979-04-10 The Foxboro Company Industrial process control system
US4152760A (en) 1977-09-16 1979-05-01 The Foxboro Company Industrial process control system
US4145699A (en) 1977-12-07 1979-03-20 Bell Telephone Laboratories, Incorporated Superconducting junctions utilizing a binary semiconductor barrier
US4184188A (en) 1978-01-16 1980-01-15 Veeco Instruments Inc. Substrate clamping technique in IC fabrication processes
US4217463A (en) 1978-03-13 1980-08-12 National Distillers And Chemical Corporation Fast responsive, high pressure thermocouple
US4241000A (en) 1978-08-24 1980-12-23 The United States Of America As Represented By The Secretary Of The Army Process for producing polycrystalline cubic aluminum oxynitride
US4229064A (en) 1978-10-25 1980-10-21 Trw Inc. Polarizing adapter sleeves for electrical connectors
US4314763A (en) 1979-01-04 1982-02-09 Rca Corporation Defect detection system
FI57975C (fi) 1979-02-28 1980-11-10 Lohja Ab Oy Foerfarande och anordning vid uppbyggande av tunna foereningshinnor
GB2051875A (en) 1979-05-29 1981-01-21 Standard Telephones Cables Ltd Preparing metal coatings
US4234449A (en) 1979-05-30 1980-11-18 The United States Of America As Represented By The United States Department Of Energy Method of handling radioactive alkali metal waste
JPS5651045A (en) 1979-09-29 1981-05-08 Toshiba Corp Detector for part between data of record player
US4389973A (en) 1980-03-18 1983-06-28 Oy Lohja Ab Apparatus for performing growth of compound thin films
US4324611A (en) 1980-06-26 1982-04-13 Branson International Plasma Corporation Process and gas mixture for etching silicon dioxide and silicon nitride
DE3030697A1 (de) 1980-08-14 1982-03-18 Hochtemperatur-Reaktorbau GmbH, 5000 Köln Gasgekuehlter kernreaktor
US4322592A (en) 1980-08-22 1982-03-30 Rca Corporation Susceptor for heating semiconductor substrates
US4355912A (en) 1980-09-12 1982-10-26 Haak Raymond L Spring loaded sensor fitting
US4479831A (en) 1980-09-15 1984-10-30 Burroughs Corporation Method of making low resistance polysilicon gate transistors and low resistance interconnections therefor via gas deposited in-situ doped amorphous layer and heat-treatment
US4384918A (en) 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
EP0058571A1 (en) 1981-02-18 1982-08-25 National Research Development Corporation Method and apparatus for delivering a controlled flow rate of reactant to a vapour deposition process
US4333735A (en) 1981-03-16 1982-06-08 Exxon Research & Engineering Co. Process and apparatus for measuring gaseous fixed nitrogen species
US4466766A (en) 1981-05-20 1984-08-21 Ruska Instrument Corporation Transfer apparatus
NO150532C (no) 1981-05-22 1984-10-31 Bjoern R Hope Anordning ved nivaamaaler.
US4488506A (en) 1981-06-18 1984-12-18 Itt Industries, Inc. Metallization plant
USD269850S (en) 1981-07-22 1983-07-26 Drag Specialties, Inc. Handlebar grip
JPS5819462A (ja) 1981-07-24 1983-02-04 Kawasaki Steel Corp 電縫溶接鋼管
US4436674A (en) 1981-07-30 1984-03-13 J.C. Schumacher Co. Vapor mass flow control system
NL8103979A (nl) 1981-08-26 1983-03-16 Bok Edward Methode en inrichting voor het aanbrengen van een film vloeibaar medium op een substraat.
US4520116A (en) 1981-08-31 1985-05-28 Raytheon Company Transparent aluminum oxynitride and method of manufacture
US4720362A (en) 1981-08-31 1988-01-19 Raytheon Company Transparent aluminum oxynitride and method of manufacture
US4481300A (en) 1981-08-31 1984-11-06 Raytheon Company Aluminum oxynitride having improved optical characteristics and method of manufacture
GB2106325A (en) 1981-09-14 1983-04-07 Philips Electronic Associated Electrostatic chuck
FR2517790A1 (fr) 1981-12-07 1983-06-10 British Nuclear Fuels Ltd Valve a levee equipee d'un soufflet entre l'obturateur et le corps, notamment pour fluides radioactifs ou toxiques
US4412133A (en) 1982-01-05 1983-10-25 The Perkin-Elmer Corp. Electrostatic cassette
US4414492A (en) 1982-02-02 1983-11-08 Intent Patent A.G. Electronic ballast system
JPS6059104B2 (ja) 1982-02-03 1985-12-23 株式会社東芝 静電チヤツク板
NL8200753A (nl) 1982-02-24 1983-09-16 Integrated Automation Methode en inrichting voor het aanbrengen van een coating op een substraat of tape.
US4484061A (en) 1982-05-13 1984-11-20 Sys-Tec, Inc. Temperature control system for liquid chromatographic columns employing a thin film heater/sensor
US4465716A (en) 1982-06-02 1984-08-14 Texas Instruments Incorporated Selective deposition of composite materials
FR2529714A1 (fr) 1982-07-01 1984-01-06 Commissariat Energie Atomique Procede de realisation de l'oxyde de champ d'un circuit integre
US4401507A (en) 1982-07-14 1983-08-30 Advanced Semiconductor Materials/Am. Method and apparatus for achieving spatially uniform externally excited non-thermal chemical reactions
JPS5929435A (ja) 1982-08-11 1984-02-16 Hitachi Ltd 試料支持装置
NL8203318A (nl) 1982-08-24 1984-03-16 Integrated Automation Inrichting voor processing van substraten.
FR2532783A1 (fr) 1982-09-07 1984-03-09 Vu Duy Phach Machine de traitement thermique pour semiconducteurs
US4454370A (en) 1982-09-07 1984-06-12 Wahl Instruments, Inc. Thermocouple surface probe
US4444990A (en) 1982-09-08 1984-04-24 Servo Corporation Of America Heat sensing device
US5242501A (en) 1982-09-10 1993-09-07 Lam Research Corporation Susceptor in chemical vapor deposition reactors
JPS5945900U (ja) 1982-09-17 1984-03-27 住友電気工業株式会社 高周波誘導プラズマ用ト−チ
US4512113A (en) 1982-09-23 1985-04-23 Budinger William D Workpiece holder for polishing operation
US4499354A (en) 1982-10-06 1985-02-12 General Instrument Corp. Susceptor for radiant absorption heater system
JPS5979545A (ja) 1982-10-29 1984-05-08 Toshiba Corp 静電チャック装置
JPS59127847A (ja) 1983-01-13 1984-07-23 Tokuda Seisakusho Ltd スパツタリング装置の静電チヤツク装置
JPS60110133A (ja) 1983-01-24 1985-06-15 Toshiba Corp 静電チャックにおける異状確認装置
US4622918A (en) 1983-01-31 1986-11-18 Integrated Automation Limited Module for high vacuum processing
US4570328A (en) 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
JPS59211779A (ja) 1983-05-14 1984-11-30 Toshiba Corp 圧縮機
US4548688A (en) 1983-05-23 1985-10-22 Fusion Semiconductor Systems Hardening of photoresist
US4537001A (en) 1983-05-23 1985-08-27 Uppstroem Leif R Building elements
USD274122S (en) 1983-06-20 1984-06-05 Drag Specialties, Inc. Motorcycle handlebar grip
US4551192A (en) 1983-06-30 1985-11-05 International Business Machines Corporation Electrostatic or vacuum pinchuck formed with microcircuit lithography
US4496828A (en) 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly
JPS6050923A (ja) 1983-08-31 1985-03-22 Hitachi Ltd プラズマ表面処理方法
GB2154365A (en) 1984-02-10 1985-09-04 Philips Electronic Associated Loading semiconductor wafers on an electrostatic chuck
JPS6074626A (ja) 1983-09-30 1985-04-26 Fujitsu Ltd ウエハー処理方法及び装置
US4579080A (en) 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
US4655592A (en) 1983-12-30 1987-04-07 Hamamatsu Systems, Inc. Particle detection method and apparatus
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US4735259A (en) 1984-02-21 1988-04-05 Hewlett-Packard Company Heated transfer line for capillary tubing
USD288556S (en) 1984-02-21 1987-03-03 Pace, Incorporated Ornamental design for a frame of circuit elements utilized to replace damaged elements on printed circuit boards
US5259881A (en) 1991-05-17 1993-11-09 Materials Research Corporation Wafer processing cluster tool batch preheating and degassing apparatus
US4527005A (en) 1984-03-13 1985-07-02 The United States Of America As Represented By The United States Department Of Energy Spring loaded thermocouple module
US4512841A (en) 1984-04-02 1985-04-23 International Business Machines Corporation RF Coupling techniques
US4724272A (en) 1984-04-17 1988-02-09 Rockwell International Corporation Method of controlling pyrolysis temperature
US4575636A (en) 1984-04-30 1986-03-11 Rca Corporation Deep ultraviolet (DUV) flood exposure system
US4611966A (en) 1984-05-30 1986-09-16 Johnson Lester R Apparatus for transferring semiconductor wafers
US4590326A (en) 1984-06-14 1986-05-20 Texaco Inc. Multi-element thermocouple
US4534816A (en) 1984-06-22 1985-08-13 International Business Machines Corporation Single wafer plasma etch reactor
US4858557A (en) 1984-07-19 1989-08-22 L.P.E. Spa Epitaxial reactors
JPS6138863A (ja) 1984-07-30 1986-02-24 Toshiba Corp 研磨装置
NL8402410A (nl) 1984-08-01 1986-03-03 Bok Edward Verbeterde proces installatie met double-floating transport en processing van wafers en tape.
US4700089A (en) 1984-08-23 1987-10-13 Fujitsu Limited Delay circuit for gate-array LSI
US4579378A (en) 1984-10-31 1986-04-01 Snyders Robert V Mortar joint pointing guide
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPH0236276Y2 (ko) 1985-01-10 1990-10-03
US4620998A (en) 1985-02-05 1986-11-04 Haresh Lalvani Crescent-shaped polygonal tiles
US4624728A (en) 1985-06-11 1986-11-25 Tegal Corporation Pin lift plasma processing
JPS624231U (ko) 1985-06-22 1987-01-12
US4653541A (en) 1985-06-26 1987-03-31 Parker Hannifin Corporation Dual wall safety tube
JPH0626206B2 (ja) 1985-08-28 1994-04-06 エフエスアイ コ−ポレイシヨン 基板より気相法で膜除去する方法及び装置
US4789294A (en) 1985-08-30 1988-12-06 Canon Kabushiki Kaisha Wafer handling apparatus and method
US4776744A (en) 1985-09-09 1988-10-11 Applied Materials, Inc. Systems and methods for wafer handling in semiconductor process equipment
US4721534A (en) 1985-09-12 1988-01-26 System Planning Corporation Immersion pyrometer
US5512102A (en) 1985-10-14 1996-04-30 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4949671A (en) 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US4664769A (en) 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
DE3544812A1 (de) 1985-12-18 1987-06-25 Heraeus Schott Quarzschmelze Doppelwand-quarzglasrohr fuer die durchfuehrung halbleitertechnologischer prozesse
JPH0651909B2 (ja) 1985-12-28 1994-07-06 キヤノン株式会社 薄膜多層構造の形成方法
KR940000915B1 (ko) 1986-01-31 1994-02-04 가부시기가이샤 히다찌세이사꾸쇼 표면 처리방법
NL8600255A (nl) 1986-02-03 1987-09-01 Bok Edward Verbeterde inrichting voor wafer transport en processing.
US4654226A (en) 1986-03-03 1987-03-31 The University Of Delaware Apparatus and method for photochemical vapor deposition
JPS62222625A (ja) 1986-03-25 1987-09-30 Shimizu Constr Co Ltd 半導体製造装置
JPS62237236A (ja) 1986-04-09 1987-10-17 Hitachi Ltd 恒温清浄作業室
US4764076A (en) 1986-04-17 1988-08-16 Varian Associates, Inc. Valve incorporating wafer handling arm
US4917556A (en) 1986-04-28 1990-04-17 Varian Associates, Inc. Modular wafer transport and processing system
US4670126A (en) 1986-04-28 1987-06-02 Varian Associates, Inc. Sputter module for modular wafer processing system
US4770590A (en) 1986-05-16 1988-09-13 Silicon Valley Group, Inc. Method and apparatus for transferring wafers between cassettes and a boat
US4722298A (en) 1986-05-19 1988-02-02 Machine Technology, Inc. Modular processing apparatus for processing semiconductor wafers
US4747367A (en) 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
USD309702S (en) 1986-06-25 1990-08-07 Don Hall Safety clamp attachment for a hammer
US4718637A (en) 1986-07-02 1988-01-12 Mdc Vacuum Products Corporation High vacuum gate valve having improved metal vacuum joint
US4681134A (en) 1986-07-23 1987-07-21 Paris Sr Raymond L Valve lock
US5183511A (en) 1986-07-23 1993-02-02 Semiconductor Energy Laboratory Co., Ltd. Photo CVD apparatus with a glow discharge system
US4812201A (en) 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
US4721533A (en) 1986-08-01 1988-01-26 System Planning Corporation Protective structure for an immersion pyrometer
US4749416A (en) 1986-08-01 1988-06-07 System Planning Corporation Immersion pyrometer with protective structure for sidewall use
DE3626724C2 (de) 1986-08-07 1994-06-16 Siemens Ag Anordnung zur Oberflächenprüfung
US4882199A (en) 1986-08-15 1989-11-21 Massachusetts Institute Of Technology Method of forming a metal coating on a substrate
KR910003742B1 (ko) 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5427824A (en) 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
US4717461A (en) 1986-09-15 1988-01-05 Machine Technology, Inc. System and method for processing workpieces
US4938815A (en) 1986-10-15 1990-07-03 Advantage Production Technology, Inc. Semiconductor substrate heater and reactor process and apparatus
DE3635216A1 (de) 1986-10-16 1988-04-21 Draegerwerk Ag Elektrisch ansteuerbares ventil
US4725204A (en) 1986-11-05 1988-02-16 Pennwalt Corporation Vacuum manifold pumping system
GB2199022B (en) 1986-11-20 1991-01-02 Shimizu Construction Co Ltd Dust tight storage cabinet apparatus for use in clean rooms
JPS63136532A (ja) 1986-11-27 1988-06-08 Nec Kyushu Ltd 半導体基板熱処理装置
US4775281A (en) 1986-12-02 1988-10-04 Teradyne, Inc. Apparatus and method for loading and unloading wafers
US5882165A (en) 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
EP0273226B1 (de) 1986-12-22 1992-01-15 Siemens Aktiengesellschaft Transportbehälter mit austauschbarem, zweiteiligem Innenbehälter
USD311126S (en) 1986-12-23 1990-10-09 Joseph Crowley Shelf extending mounting bracket for additional product display
US4753856A (en) 1987-01-02 1988-06-28 Dow Corning Corporation Multilayer ceramic coatings from silicate esters and metal oxides
SU1408319A1 (ru) 1987-01-06 1988-07-07 Всесоюзный научно-исследовательский институт аналитического приборостроения Хемилюминесцентный газоанализатор окислов азота
US4802441A (en) 1987-01-08 1989-02-07 Btu Engineering Corporation Double wall fast cool-down furnace
US4753192A (en) 1987-01-08 1988-06-28 Btu Engineering Corporation Movable core fast cool-down furnace
FR2610007B1 (fr) 1987-01-22 1990-08-24 Bmi Fours Ind Four industriel vertical a ventilation peripherique
IT209910Z2 (it) 1987-02-06 1988-11-04 Sgs Microelettronica Spa Contenitore porta-wafer o fretta di slicio, utilizzato perl'immagazzinamento e/o spedizione sotto vuoto degli stessi.
US4976996A (en) 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US4874273A (en) 1987-03-16 1989-10-17 Hitachi, Ltd. Apparatus for holding and/or conveying articles by fluid
US4863374A (en) 1987-03-27 1989-09-05 Edward Orton, Jr., Ceramic Foundation Kiln with ventilation system
US4821674A (en) 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5198034A (en) 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US4790258A (en) 1987-04-03 1988-12-13 Tegal Corporation Magnetically coupled wafer lift pins
US4812217A (en) 1987-04-27 1989-03-14 American Telephone And Telegraph Company, At&T Bell Laboratories Method and apparatus for feeding and coating articles in a controlled atmosphere
US4827430A (en) 1987-05-11 1989-05-02 Baxter International Inc. Flow measurement system
US4780169A (en) 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4738618A (en) 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
US4808387A (en) 1987-05-15 1989-02-28 Exxon Chemical Patents Inc. Stabilization of vanadium tetrachloride
US4871523A (en) 1987-05-15 1989-10-03 Exxon Chemical Patents Inc. Vanadium tetrachloride stabilization
US5221556A (en) 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
US4828224A (en) 1987-10-15 1989-05-09 Epsilon Technology, Inc. Chemical vapor deposition system
NO161941C (no) 1987-06-25 1991-04-30 Kvaerner Eng Fremgangsmaate ved og anlegg for transport av hydrokarboner over lang avstand fra en hydrokarbonkilde til havs.
NL8701549A (nl) 1987-07-01 1989-02-01 Asm International N V Amtc Plasmareactor van het magnetrontype voor hoge-flux plasma-etsen en plasma-depositie.
US4837113A (en) 1987-07-16 1989-06-06 Texas Instruments Incorporated Method for depositing compound from group II-VI
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
USD327534S (en) 1987-07-30 1992-06-30 CLM Investments, Inc. Floor drain strainer
US4854263B1 (en) 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
JPH0777211B2 (ja) 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
JPS6455821A (en) 1987-08-26 1989-03-02 Dainippon Screen Mfg Rapid cooling type heat treating apparatus
US4756794A (en) 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching
KR970004947B1 (ko) 1987-09-10 1997-04-10 도오교오 에레구토론 가부시끼가이샤 핸들링장치
US5180435A (en) 1987-09-24 1993-01-19 Research Triangle Institute, Inc. Remote plasma enhanced CVD method and apparatus for growing an epitaxial semiconductor layer
US4854266A (en) 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
US4916091A (en) 1987-11-05 1990-04-10 Texas Instruments Incorporated Plasma and plasma UV deposition of SiO2
US4880982A (en) 1987-11-17 1989-11-14 Impex Production & Development A/S (Ltd.) Fluid indicator for a containment vessel
JPH0648217B2 (ja) 1987-12-24 1994-06-22 川惣電機工業株式会社 溶融金属の連続測温装置
KR970003885B1 (ko) 1987-12-25 1997-03-22 도오교오 에레구토론 가부시끼 가이샤 에칭 방법 및 그 장치
US4830515A (en) 1987-12-28 1989-05-16 Omega Engineering, Inc. Mounting clip for a thermocouple assembly
US5028366A (en) 1988-01-12 1991-07-02 Air Products And Chemicals, Inc. Water based mold release compositions for making molded polyurethane foam
JPH01185176A (ja) 1988-01-18 1989-07-24 Fujitsu Ltd 静電吸着を用いた処理方法
FR2628985B1 (fr) 1988-03-22 1990-12-28 Labo Electronique Physique Reacteur d'epitaxie a paroi protegee contre les depots
US5069591A (en) 1988-03-24 1991-12-03 Tel Sagami Limited Semiconductor wafer-processing apparatus
JP2768685B2 (ja) 1988-03-28 1998-06-25 株式会社東芝 半導体装置の製造方法及びその装置
US4978567A (en) 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
JP2859632B2 (ja) 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
US4857382A (en) 1988-04-26 1989-08-15 General Electric Company Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides
US4949848A (en) 1988-04-29 1990-08-21 Fluoroware, Inc. Wafer carrier
US5407867A (en) 1988-05-12 1995-04-18 Mitsubishki Denki Kabushiki Kaisha Method of forming a thin film on surface of semiconductor substrate
US5174881A (en) 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
JPH01296613A (ja) 1988-05-25 1989-11-30 Nec Corp ３−ｖ族化合物半導体の気相成長方法
JPH01307229A (ja) 1988-06-06 1989-12-12 Canon Inc 堆積膜形成法
JPH01313954A (ja) 1988-06-14 1989-12-19 Fujitsu Ltd 静電チャック
KR960012876B1 (ko) 1988-06-16 1996-09-25 도오교오 에레구토론 사가미 가부시끼가이샤 열처리 장치
US5178682A (en) 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
KR0155545B1 (ko) 1988-06-27 1998-12-01 고다까 토시오 기판의 열처리 장치
US5064337A (en) 1988-07-19 1991-11-12 Tokyo Electron Limited Handling apparatus for transferring carriers and a method of transferring carriers
US5125358A (en) 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
IT1227708B (it) 1988-07-29 1991-05-06 Pomini Farrel Spa Dispositivo di rilevamento della temperatura del materiale contenuto entro un apparecchio chiuso.
US5158128A (en) 1988-09-01 1992-10-27 Sumitec, Inc. Thermocouple for a continuous casting machine
US4986215A (en) 1988-09-01 1991-01-22 Kyushu Electronic Metal Co., Ltd. Susceptor for vapor-phase growth system
US4956538A (en) 1988-09-09 1990-09-11 Texas Instruments, Incorporated Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors
JPH0293071A (ja) 1988-09-29 1990-04-03 Toshiba Corp 薄膜の形成方法
WO1990004045A1 (en) 1988-10-14 1990-04-19 Advantage Production Technology Inc. Semiconductor wafer processing method and apparatus
JP2918892B2 (ja) 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
US5107170A (en) 1988-10-18 1992-04-21 Nissin Electric Co., Ltd. Ion source having auxillary ion chamber
US4837185A (en) 1988-10-26 1989-06-06 Intel Corporation Pulsed dual radio frequency CVD process
DE3836696C1 (en) 1988-10-28 1989-12-07 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Lock for transporting material between clean rooms
US4962063A (en) 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
US5119760A (en) 1988-12-27 1992-06-09 Symetrix Corporation Methods and apparatus for material deposition
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
US5084126A (en) 1988-12-29 1992-01-28 Texas Instruments Incorporated Method and apparatus for uniform flow distribution in plasma reactors
USD320148S (en) 1988-12-30 1991-09-24 Andrews Edward A Drill socket
JPH02185038A (ja) 1989-01-11 1990-07-19 Nec Corp 熱処理装置
JPH0834187B2 (ja) 1989-01-13 1996-03-29 東芝セラミックス株式会社 サセプタ
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
EP0382984A1 (en) 1989-02-13 1990-08-22 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Thermal decomposition trap
JPH0645893B2 (ja) 1989-02-17 1994-06-15 科学技術庁長官官房会計課長 薄膜の形成方法
DE8902307U1 (ko) 1989-02-27 1989-08-31 Soehlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried, De
US5053247A (en) 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
NL8900544A (nl) 1989-03-06 1990-10-01 Asm Europ Behandelingsstelsel, behandelingsvat en werkwijze voor het behandelen van een substraat.
US5088444A (en) 1989-03-15 1992-02-18 Kabushiki Kaisha Toshiba Vapor deposition system
US4934831A (en) 1989-03-20 1990-06-19 Claud S. Gordon Company Temperature sensing device
US5186120A (en) 1989-03-22 1993-02-16 Mitsubishi Denki Kabushiki Kaisha Mixture thin film forming apparatus
DE69012727T2 (de) 1989-03-31 1995-02-09 Canon Kk Verfahren zur herstellung eines polykristallinen filmes mittels chemischen dampfniederschlags.
NL8900980A (nl) 1989-04-19 1990-11-16 Asm Europ Werkwijze voor het voorzien in een gedoseerde dampstroom alsmede inrichting voor het uitvoeren daarvan.
US5194401A (en) 1989-04-18 1993-03-16 Applied Materials, Inc. Thermally processing semiconductor wafers at non-ambient pressures
US4920918A (en) 1989-04-18 1990-05-01 Applied Materials, Inc. Pressure-resistant thermal reactor system for semiconductor processing
US4963506A (en) 1989-04-24 1990-10-16 Motorola Inc. Selective deposition of amorphous and polycrystalline silicon
DE69033711T2 (de) 1989-04-25 2001-06-28 Matsushita Electronics Corp Verfahren zur Herstellung eines bipolaren Transistors
JP2779950B2 (ja) 1989-04-25 1998-07-23 東陶機器株式会社 静電チャックの電圧印加方法および電圧印加装置
US5192717A (en) 1989-04-28 1993-03-09 Canon Kabushiki Kaisha Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
US5360269A (en) 1989-05-10 1994-11-01 Tokyo Kogyo Kabushiki Kaisha Immersion-type temperature measuring apparatus using thermocouple
US4987856A (en) 1989-05-22 1991-01-29 Advanced Semiconductor Materials America, Inc. High throughput multi station processor for multiple single wafers
US5313061A (en) 1989-06-06 1994-05-17 Viking Instrument Miniaturized mass spectrometer system
US5134965A (en) 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
US5061083A (en) 1989-06-19 1991-10-29 The United States Of America As Represented By The Department Of Energy Temperature monitoring device and thermocouple assembly therefor
JP2890494B2 (ja) 1989-07-11 1999-05-17 セイコーエプソン株式会社 プラズマ薄膜の製造方法
US5022961B1 (en) 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
US5060322A (en) 1989-07-27 1991-10-29 Delepine Jean C Shower room and ceiling element, especially for a shower room
US5013691A (en) 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
EP0606114A1 (en) 1989-08-11 1994-07-13 Seiko Instruments Inc. Method of producing field effect transistor
US5213650A (en) 1989-08-25 1993-05-25 Applied Materials, Inc. Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
FI83176C (fi) 1989-09-12 1991-06-10 Aitec Oy Foerfarande foer styrning av roerelser hos en robot och en styckemanipulator under en robotcells inlaerningsskede.
US5057436A (en) 1989-10-02 1991-10-15 Agmaster, Inc. Method and apparatus for detecting toxic gases
JPH03125453A (ja) 1989-10-09 1991-05-28 Toshiba Corp 半導体ウエハ移送装置
US5098865A (en) 1989-11-02 1992-03-24 Machado Jose R High step coverage silicon oxide thin films
KR0161674B1 (ko) 1989-11-03 1999-02-01 한스 피터 후크숀 수분 존재하에 반도체 기판을 할로겐 에칭하는 방법
JPH03155625A (ja) 1989-11-14 1991-07-03 Seiko Epson Corp プラズマｃｖｄ膜の製造方法
DE68927182T2 (de) 1989-11-22 1997-01-30 Nippon Steel Corp Thermoelementähnliche temperaturfühler und verfahren zur temperaturmessung flüssigen stahles
US5002632A (en) 1989-11-22 1991-03-26 Texas Instruments Incorporated Method and apparatus for etching semiconductor materials
US4987102A (en) 1989-12-04 1991-01-22 Motorola, Inc. Process for forming high purity thin films
USD333606S (en) 1989-12-12 1993-03-02 Kabushiki Kaisha Kanemitsu Pulley
RU1786406C (ru) 1989-12-12 1993-01-07 Научно-Техническое Кооперативное Предприятие "Акцент" Способ контрол дефектов на плоской отражающей поверхности и устройство дл его осуществлени
JPH0738407B2 (ja) 1989-12-28 1995-04-26 株式会社荏原製作所 保管庫
JP2867526B2 (ja) 1990-01-16 1999-03-08 富士通株式会社 半導体製造装置
JP2723324B2 (ja) 1990-01-25 1998-03-09 日本特殊陶業株式会社 アルミナ焼結基板
USD330900S (en) 1990-02-08 1992-11-10 Wakegijig William M Drill adapter
JP2936623B2 (ja) 1990-02-26 1999-08-23 日本電気株式会社 半導体装置の製造方法
LU87693A1 (fr) 1990-03-07 1991-10-08 Wurth Paul Sa Sonde de prise d'echantillons gazeux et de mesures thermiques dans un four a cuve
JPH03257182A (ja) 1990-03-07 1991-11-15 Hitachi Ltd 表面加工装置
DE69126724T2 (de) 1990-03-19 1998-01-15 Toshiba Kawasaki Kk Vorrichtung zur Dampfphasenabscheidung
JPH03277774A (ja) 1990-03-27 1991-12-09 Semiconductor Energy Lab Co Ltd 光気相反応装置
US5310410A (en) 1990-04-06 1994-05-10 Sputtered Films, Inc. Method for processing semi-conductor wafers in a multiple vacuum and non-vacuum chamber apparatus
DE4011933C2 (de) 1990-04-12 1996-11-21 Balzers Hochvakuum Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür
US5243202A (en) 1990-04-25 1993-09-07 Casio Computer Co., Ltd. Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5328810A (en) 1990-05-07 1994-07-12 Micron Technology, Inc. Method for reducing, by a factor or 2-N, the minimum masking pitch of a photolithographic process
US5356672A (en) 1990-05-09 1994-10-18 Jet Process Corporation Method for microwave plasma assisted supersonic gas jet deposition of thin films
CA2016970A1 (en) 1990-05-16 1991-11-16 Prasad N. Gadgil Inverted diffusion stagnation point flow reactor for vapor deposition of thin films
JPH0429313A (ja) 1990-05-24 1992-01-31 Fujitsu Ltd 半導体結晶の製造装置
US5130003A (en) 1990-06-14 1992-07-14 Conrad Richard H method of powering corona discharge in ozone generators
US5393577A (en) 1990-06-19 1995-02-28 Nec Corporation Method for forming a patterned layer by selective chemical vapor deposition
US5225366A (en) 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
NL9001451A (nl) 1990-06-25 1992-01-16 Asm Europ Driewegklep.
KR0153250B1 (ko) 1990-06-28 1998-12-01 카자마 겐쥬 종형 열처리 장치
JPH0464025A (ja) 1990-07-02 1992-02-28 Matsushita Electric Ind Co Ltd 調理器用温度センサー
US5362328A (en) 1990-07-06 1994-11-08 Advanced Technology Materials, Inc. Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem
US5314570A (en) 1990-07-18 1994-05-24 Sumitomo Electric Industries Ltd. Process and apparatus for the production of diamond
KR0176715B1 (ko) 1990-07-30 1999-04-15 오가 노리오 드라이에칭방법
US5231062A (en) 1990-08-09 1993-07-27 Minnesota Mining And Manufacturing Company Transparent aluminum oxynitride-based ceramic article
US5082517A (en) 1990-08-23 1992-01-21 Texas Instruments Incorporated Plasma density controller for semiconductor device processing equipment
JPH04115531A (ja) 1990-09-05 1992-04-16 Mitsubishi Electric Corp 化学気相成長装置
US5273609A (en) 1990-09-12 1993-12-28 Texas Instruments Incorporated Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment
US5261167A (en) 1990-09-27 1993-11-16 Tokyo Electron Sagami Limited Vertical heat treating apparatus
US5167716A (en) 1990-09-28 1992-12-01 Gasonics, Inc. Method and apparatus for batch processing a semiconductor wafer
JP2780866B2 (ja) 1990-10-11 1998-07-30 大日本スクリーン製造 株式会社 光照射加熱基板の温度測定装置
TW214599B (ko) 1990-10-15 1993-10-11 Seiko Epson Corp
JP2714247B2 (ja) 1990-10-29 1998-02-16 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する方法及び装置
US5228114A (en) 1990-10-30 1993-07-13 Tokyo Electron Sagami Limited Heat-treating apparatus with batch scheme having improved heat controlling capability
US5855687A (en) 1990-12-05 1999-01-05 Applied Materials, Inc. Substrate support shield in wafer processing reactors
US5304248A (en) 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
JP2839720B2 (ja) 1990-12-19 1998-12-16 株式会社東芝 熱処理装置
US5071258A (en) 1991-02-01 1991-12-10 Vesuvius Crucible Company Thermocouple assembly
EP0499004B1 (en) 1991-02-15 1996-02-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Process for manufacturing fiber reinforced ceramic materials by chemical vapor infiltration
JPH05136218A (ja) 1991-02-19 1993-06-01 Tokyo Electron Yamanashi Kk 検査装置
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
JP2740050B2 (ja) 1991-03-19 1998-04-15 株式会社東芝 溝埋込み配線形成方法
JP2986121B2 (ja) 1991-03-26 1999-12-06 東京エレクトロン株式会社 ロードロック装置及び真空処理装置
US5271732A (en) 1991-04-03 1993-12-21 Tokyo Electron Sagami Kabushiki Kaisha Heat-treating apparatus
DE69230493T2 (de) 1991-04-04 2000-05-04 Seagate Technology Verfahren und vorrichtung zum sputtern mit hoher geschwindigkeit
JP3323530B2 (ja) 1991-04-04 2002-09-09 株式会社日立製作所 半導体装置の製造方法
US5182232A (en) 1991-04-08 1993-01-26 Micron Technology, Inc. Metal silicide texturizing technique
US5116018A (en) 1991-04-12 1992-05-26 Automax, Inc. Lockout modules
JPH0812847B2 (ja) 1991-04-22 1996-02-07 株式会社半導体プロセス研究所 半導体製造装置及び半導体装置の製造方法
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5125710A (en) 1991-05-14 1992-06-30 Angelo Gianelo Under-platform drawer for trucks
US5565038A (en) 1991-05-16 1996-10-15 Intel Corporation Interhalogen cleaning of process equipment
US5104514A (en) 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5193969A (en) 1991-05-20 1993-03-16 Fortrend Engineering Corporation Wafer transfer machine
US5234526A (en) 1991-05-24 1993-08-10 Lam Research Corporation Window for microwave plasma processing device
US5252134A (en) 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
JP3002013B2 (ja) 1991-06-04 2000-01-24 松下技研株式会社 薄膜および多層膜の製造方法およびその製造装置
US5249960A (en) 1991-06-14 1993-10-05 Tokyo Electron Sagami Kabushiki Kaisha Forced cooling apparatus for heat treatment apparatus
US6095083A (en) 1991-06-27 2000-08-01 Applied Materiels, Inc. Vacuum processing chamber having multi-mode access
JP3086719B2 (ja) 1991-06-27 2000-09-11 株式会社東芝 表面処理方法
DE4122452C2 (de) 1991-07-06 1993-10-28 Schott Glaswerke Verfahren und Vorrichtung zum Zünden von CVD-Plasmen
US5221369A (en) 1991-07-08 1993-06-22 Air Products And Chemicals, Inc. In-situ generation of heat treating atmospheres using non-cryogenically produced nitrogen
JPH0523079A (ja) 1991-07-19 1993-02-02 Shimano Inc 釣り竿及びその製造方法
US5277932A (en) 1991-07-29 1994-01-11 Syracuse University CVD method for forming metal boride films using metal borane cluster compounds
JP2580928Y2 (ja) 1991-08-22 1998-09-17 日本電気株式会社 気相成長装置
US5137286A (en) 1991-08-23 1992-08-11 General Electric Company Permanent magnet floating shaft seal
CA2069132C (en) 1991-08-29 1996-01-09 Koji Fujii Light-beam heating apparatus
JP3040212B2 (ja) 1991-09-05 2000-05-15 株式会社東芝 気相成長装置
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
US5154301A (en) 1991-09-12 1992-10-13 Fluoroware, Inc. Wafer carrier
JPH05217921A (ja) 1991-09-13 1993-08-27 Motorola Inc 材料膜のエピタキシアル成長を行うための温度制御された処理
CA2078540A1 (en) 1991-09-17 1993-03-18 So Tanaka Superconducting thin film formed of oxide superconductor material, superconducting device utilizing the superconducting thin film
FR2682047B1 (fr) 1991-10-07 1993-11-12 Commissariat A Energie Atomique Reacteur de traitement chimique en phase gazeuse.
US5219226A (en) 1991-10-25 1993-06-15 Quadtek, Inc. Imaging and temperature monitoring system
JPH05118928A (ja) 1991-10-25 1993-05-14 Tokyo Electron Ltd 接触式の温度測定方法
US5387265A (en) 1991-10-29 1995-02-07 Kokusai Electric Co., Ltd. Semiconductor wafer reaction furnace with wafer transfer means
US5193912A (en) 1991-11-18 1993-03-16 Saunders Roger I Probe for sensing and measuring temperature
US5199603A (en) 1991-11-26 1993-04-06 Prescott Norman F Delivery system for organometallic compounds
US6400996B1 (en) 1999-02-01 2002-06-04 Steven M. Hoffberg Adaptive pattern recognition based control system and method
JPH05171446A (ja) 1991-12-24 1993-07-09 Furukawa Electric Co Ltd:The 薄膜形成方法
EP0550058B1 (en) 1991-12-30 1998-11-11 Texas Instruments Incorporated A programmable multizone gas injector for single-wafer semiconductor processing equipment
US5414221A (en) 1991-12-31 1995-05-09 Intel Corporation Embedded ground plane and shielding structures using sidewall insulators in high frequency circuits having vias
US5443686A (en) 1992-01-15 1995-08-22 International Business Machines Corporation Inc. Plasma CVD apparatus and processes
US5215588A (en) 1992-01-17 1993-06-01 Amtech Systems, Inc. Photo-CVD system
US6379466B1 (en) 1992-01-17 2002-04-30 Applied Materials, Inc. Temperature controlled gas distribution plate
US5480818A (en) 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
JP2506539B2 (ja) 1992-02-27 1996-06-12 株式会社ジーティシー 絶縁膜の形成方法
US5208961A (en) 1992-02-28 1993-05-11 National Semiconductor Corporation Semiconductor processing furnace door alignment apparatus and method
NL9200446A (nl) 1992-03-10 1993-10-01 Tempress B V Inrichting voor het behandelen van microschakeling-schijven (wafers).
US5226383A (en) 1992-03-12 1993-07-13 Bell Communications Research, Inc. Gas foil rotating substrate holder
JPH05267186A (ja) 1992-03-18 1993-10-15 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
US5766360A (en) 1992-03-27 1998-06-16 Kabushiki Kaisha Toshiba Substrate processing apparatus and substrate processing method
JP3191392B2 (ja) 1992-04-07 2001-07-23 神鋼電機株式会社 クリーンルーム用密閉式コンテナ
JPH05291142A (ja) 1992-04-15 1993-11-05 Nec Corp 液体ソース供給装置
US5268989A (en) 1992-04-16 1993-12-07 Texas Instruments Incorporated Multi zone illuminator with embeded process control sensors and light interference elimination circuit
US5226967A (en) 1992-05-14 1993-07-13 Lam Research Corporation Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber
US5455069A (en) 1992-06-01 1995-10-03 Motorola, Inc. Method of improving layer uniformity in a CVD reactor
WO1993024801A1 (de) 1992-06-03 1993-12-09 Esec S.A. Vorrichtung zur wärmebehandlung eines magazins für systemträger mit elektronischen bauelementen
US5461214A (en) 1992-06-15 1995-10-24 Thermtec, Inc. High performance horizontal diffusion furnace system
KR100293830B1 (ko) 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5534072A (en) 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
JP2964779B2 (ja) 1992-06-29 1999-10-18 松下電器産業株式会社 光学素子のプレス成形用金型
JP3148004B2 (ja) 1992-07-06 2001-03-19 株式会社東芝 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
US5601641A (en) 1992-07-21 1997-02-11 Tse Industries, Inc. Mold release composition with polybutadiene and method of coating a mold core
US5306666A (en) 1992-07-24 1994-04-26 Nippon Steel Corporation Process for forming a thin metal film by chemical vapor deposition
JPH0653210A (ja) 1992-07-28 1994-02-25 Nec Corp 半導体装置
KR100304127B1 (ko) 1992-07-29 2001-11-30 이노마다 시게오 가반식 밀폐 컨테이너를 사용한 전자기판 처리시스템과 그의 장치
JP3334911B2 (ja) 1992-07-31 2002-10-15 キヤノン株式会社 パターン形成方法
ES2078718T3 (es) 1992-08-04 1995-12-16 Ibm Estructuras de cadenas de fabricacion a base de transportadores totalmente automatizados e informatizados adaptados a recipientes transportables estancos a presion.
US5271967A (en) 1992-08-21 1993-12-21 General Motors Corporation Method and apparatus for application of thermal spray coatings to engine blocks
USD363464S (en) 1992-08-27 1995-10-24 Tokyo Electron Yamanashi Limited Electrode for a semiconductor processing apparatus
US5338362A (en) 1992-08-29 1994-08-16 Tokyo Electron Limited Apparatus for processing semiconductor wafer comprising continuously rotating wafer table and plural chamber compartments
JP3183575B2 (ja) 1992-09-03 2001-07-09 東京エレクトロン株式会社 処理装置および処理方法
US5326427A (en) 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5246218A (en) 1992-09-25 1993-09-21 Intel Corporation Apparatus for securing an automatically loaded wafer cassette on a wafer processing equipment
US5280894A (en) 1992-09-30 1994-01-25 Honeywell Inc. Fixture for backside wafer etching
US6438502B1 (en) 1992-10-07 2002-08-20 Dallas Semiconductor Corporation Environmental condition sensor device and method
USD354898S (en) 1992-10-13 1995-01-31 Verdel Innovations Egg holder for use with a stand for decorating eggs
JP2906873B2 (ja) 1992-10-26 1999-06-21 日本電気株式会社 金配線の製造方法
JP3190745B2 (ja) 1992-10-27 2001-07-23 株式会社東芝 気相成長方法
JP3179212B2 (ja) 1992-10-27 2001-06-25 日本電気株式会社 半導体装置の製造方法
JP3093487B2 (ja) 1992-10-28 2000-10-03 松下電子工業株式会社 半導体装置およびその製造方法
DE4236324C1 (ko) 1992-10-28 1993-09-02 Schott Glaswerke, 55122 Mainz, De
US6235858B1 (en) 1992-10-30 2001-05-22 Ppg Industries Ohio, Inc. Aminoplast curable film-forming compositions providing films having resistance to acid etching
JPH06295862A (ja) 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
JPH086181B2 (ja) 1992-11-30 1996-01-24 日本電気株式会社 化学気相成長法および化学気相成長装置
IT1257434B (it) 1992-12-04 1996-01-17 Cselt Centro Studi Lab Telecom Generatore di vapori per impianti di deposizione chimica da fase vapore
KR100238629B1 (ko) 1992-12-17 2000-01-15 히가시 데쓰로 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치
US5295777A (en) 1992-12-23 1994-03-22 Materials Research Corporation Wafer transport module with rotatable and horizontally extendable wafer holder
DE4244189C2 (de) 1992-12-24 1995-06-01 Busch Dieter & Co Prueftech Anlegetemperaturfühler
US5453124A (en) 1992-12-30 1995-09-26 Texas Instruments Incorporated Programmable multizone gas injector for single-wafer semiconductor processing equipment
CA2114294A1 (en) 1993-01-05 1995-07-27 Thomas Earle Allen Apparatus and method for continuously mixing fluids
US5478429A (en) 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
US5820686A (en) 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US5447294A (en) 1993-01-21 1995-09-05 Tokyo Electron Limited Vertical type heat treatment system
US5444217A (en) 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
US5709745A (en) 1993-01-25 1998-01-20 Ohio Aerospace Institute Compound semi-conductors and controlled doping thereof
JP3245246B2 (ja) 1993-01-27 2002-01-07 東京エレクトロン株式会社 熱処理装置
JP2683208B2 (ja) 1993-01-28 1997-11-26 アプライド マテリアルズ インコーポレイテッド ロボット機構を用いた搬入および搬出のためのワークピース位置合わせ方法および装置
JP3258748B2 (ja) 1993-02-08 2002-02-18 東京エレクトロン株式会社 熱処理装置
JPH06319177A (ja) 1993-02-24 1994-11-15 Hewlett Packard Co <Hp> 適応遠隔制御システム
US5421893A (en) 1993-02-26 1995-06-06 Applied Materials, Inc. Susceptor drive and wafer displacement mechanism
JP3348936B2 (ja) 1993-10-21 2002-11-20 東京エレクトロン株式会社 縦型熱処理装置
US5474410A (en) 1993-03-14 1995-12-12 Tel-Varian Limited Multi-chamber system provided with carrier units
JP2948437B2 (ja) 1993-03-18 1999-09-13 富士通株式会社 論理シミュレーション用のデータ作成方法
JP3265042B2 (ja) 1993-03-18 2002-03-11 東京エレクトロン株式会社 成膜方法
US5305417A (en) 1993-03-26 1994-04-19 Texas Instruments Incorporated Apparatus and method for determining wafer temperature using pyrometry
DE4311197A1 (de) 1993-04-05 1994-10-06 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Verfahren zum Betreiben einer inkohärent strahlenden Lichtquelle
US5346961A (en) 1993-04-07 1994-09-13 Union Carbide Chemicals & Plastics Technology Corporation Process for crosslinking
JP3190165B2 (ja) 1993-04-13 2001-07-23 東京エレクトロン株式会社 縦型熱処理装置及び熱処理方法
KR100221983B1 (ko) 1993-04-13 1999-09-15 히가시 데쓰로 처리장치
EP0621051B1 (de) 1993-04-17 2001-08-22 MESSER GRIESHEIM AUSTRIA Ges.m.b.H. Gerät zur kontrollierten Zudosierung von NO zur Atemluft von Patienten
JPH06310438A (ja) 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
US5404082A (en) 1993-04-23 1995-04-04 North American Philips Corporation High frequency inverter with power-line-controlled frequency modulation
USD353452S (en) 1993-04-27 1994-12-13 Groenhoff Larry C Window adapter for portable box fans
US5637153A (en) 1993-04-30 1997-06-10 Tokyo Electron Limited Method of cleaning reaction tube and exhaustion piping system in heat processing apparatus
JP3553939B2 (ja) 1993-05-13 2004-08-11 インターユニヴァーシテアー マイクロエレクトロニカ セントラム フェレニギング ゾンデル ビンシュトベヤーク Ｈｆ及びカルボン酸の混合物を用いた半導体処理の方法
JPH06330323A (ja) 1993-05-18 1994-11-29 Mitsubishi Electric Corp 半導体装置製造装置及びそのクリーニング方法
JPH0711446A (ja) 1993-05-27 1995-01-13 Applied Materials Inc 気相成長用サセプタ装置
JP2508581B2 (ja) 1993-05-28 1996-06-19 日本電気株式会社 化学気相成長法
US5501740A (en) 1993-06-04 1996-03-26 Applied Science And Technology, Inc. Microwave plasma reactor
US5354580A (en) 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
US5616264A (en) 1993-06-15 1997-04-01 Tokyo Electron Limited Method and apparatus for controlling temperature in rapid heat treatment system
JPH0799162A (ja) 1993-06-21 1995-04-11 Hitachi Ltd Ｃｖｄリアクタ装置
ATE174842T1 (de) 1993-06-28 1999-01-15 Canon Kk Wärmeerzeugender, tano.8 enthaltender widerstand, substrat mit diesem wärmeerzeugenden widerstand für flüssigkeitsstrahlkopf, flüssigkeitsstrahlkopf mit diesem substrat, und gerät für einen flüssigkeitsstrahl mit diesem flüssigkeitsstrahlkopf
US5997768A (en) 1993-06-29 1999-12-07 Ciba Specialty Chemicals Corporation Pelletization of metal soap powders
US5484484A (en) 1993-07-03 1996-01-16 Tokyo Electron Kabushiki Thermal processing method and apparatus therefor
US5972196A (en) 1995-06-07 1999-10-26 Lynntech, Inc. Electrochemical production of ozone and hydrogen peroxide
DE69404397T2 (de) 1993-07-13 1997-11-13 Applied Materials Inc Verbesserte Suszeptor Ausführung
JPH0729836A (ja) 1993-07-14 1995-01-31 Sony Corp プラズマシリコンナイトライド膜の形成方法
US5312245A (en) 1993-07-16 1994-05-17 International Business Machines Corporation Particulate trap for vertical furnace
JP3667781B2 (ja) 1993-07-16 2005-07-06 株式会社日立製作所 エンジンシステムの診断装置
US5540821A (en) 1993-07-16 1996-07-30 Applied Materials, Inc. Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing
US5415753A (en) 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
US5350480A (en) 1993-07-23 1994-09-27 Aspect International, Inc. Surface cleaning and conditioning using hot neutral gas beam array
FR2708624A1 (fr) 1993-07-30 1995-02-10 Neuville Stephane Procédé de dépôt d'un revêtement protecteur à base de pseudo carbone diamant amorphe ou de carbure de silicium modifié.
US5348774A (en) 1993-08-11 1994-09-20 Alliedsignal Inc. Method of rapidly densifying a porous structure
JPH0766267A (ja) 1993-08-27 1995-03-10 Kokusai Electric Co Ltd ウェーハカセット授受装置
JP3576188B2 (ja) 1993-08-31 2004-10-13 株式会社半導体エネルギー研究所 気相反応装置および気相反応方法
JP3418458B2 (ja) 1993-08-31 2003-06-23 富士通株式会社 半導体装置の製造方法
US5418382A (en) 1993-09-23 1995-05-23 Fsi International, Inc. Substrate location and detection apparatus
US5417803A (en) 1993-09-29 1995-05-23 Intel Corporation Method for making Si/SiC composite material
KR100260120B1 (ko) 1993-09-30 2000-07-01 마쓰바 구니유키 열처리 장치
US5378501A (en) 1993-10-05 1995-01-03 Foster; Robert F. Method for chemical vapor deposition of titanium nitride films at low temperatures
JPH07109576A (ja) 1993-10-07 1995-04-25 Shinko Seiki Co Ltd プラズマｃｖｄによる成膜方法
US6122036A (en) 1993-10-21 2000-09-19 Nikon Corporation Projection exposure apparatus and method
JP2682403B2 (ja) 1993-10-29 1997-11-26 日本電気株式会社 半導体装置の製造方法
US5650082A (en) 1993-10-29 1997-07-22 Applied Materials, Inc. Profiled substrate heating
EP0653501B1 (en) 1993-11-11 1998-02-04 Nissin Electric Company, Limited Plasma-CVD method and apparatus
US5413813A (en) 1993-11-23 1995-05-09 Enichem S.P.A. CVD of silicon-based ceramic materials on internal surface of a reactor
US5463176A (en) 1994-01-03 1995-10-31 Eckert; C. Edward Liquid waste oxygenation
JPH07209093A (ja) 1994-01-20 1995-08-11 Tokyo Electron Ltd 温度計
US5616947A (en) 1994-02-01 1997-04-01 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an MIS structure
US5681779A (en) 1994-02-04 1997-10-28 Lsi Logic Corporation Method of doping metal layers for electromigration resistance
JPH07225214A (ja) 1994-02-14 1995-08-22 Shimadzu Corp ＮＯｘ計測装置
JP2844304B2 (ja) 1994-02-15 1999-01-06 日本原子力研究所 プラズマ対向材料
US5766365A (en) 1994-02-23 1998-06-16 Applied Materials, Inc. Removable ring for controlling edge deposition in substrate processing apparatus
US5888304A (en) 1996-04-02 1999-03-30 Applied Materials, Inc. Heater with shadow ring and purge above wafer surface
US5645646A (en) 1994-02-25 1997-07-08 Applied Materials, Inc. Susceptor for deposition apparatus
JP2959947B2 (ja) 1994-02-28 1999-10-06 信越石英株式会社 原料ガス供給方法及び装置
US5589002A (en) 1994-03-24 1996-12-31 Applied Materials, Inc. Gas distribution plate for semiconductor wafer processing apparatus with means for inhibiting arcing
US5900103A (en) 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
JP3211548B2 (ja) 1994-03-30 2001-09-25 ウシオ電機株式会社 誘電体バリア放電蛍光ランプ
JPH07283149A (ja) 1994-04-04 1995-10-27 Nissin Electric Co Ltd 薄膜気相成長装置
US5685914A (en) 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
DE69419496T2 (de) 1994-04-20 1999-10-28 St Microelectronics Srl Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers
JPH07297271A (ja) 1994-04-22 1995-11-10 Shinko Electric Co Ltd 異サイズのウェ−ハカセットを任意に支持可能な支持機構
US6447232B1 (en) 1994-04-28 2002-09-10 Semitool, Inc. Semiconductor wafer processing apparatus having improved wafer input/output handling system
US5431734A (en) 1994-04-28 1995-07-11 International Business Machines Corporation Aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical control
RU95106478A (ru) 1994-04-29 1997-01-20 Моторола Устройство и способ для разложения химических соединений
US5456207A (en) 1994-05-16 1995-10-10 The United States Of America As Represented By The Secretary Of The Navy Synthesis of triisopropylindium diisopropyltelluride adduct and use for semiconductor materials
US5775889A (en) 1994-05-17 1998-07-07 Tokyo Electron Limited Heat treatment process for preventing slips in semiconductor wafers
US5531835A (en) 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
JP3181171B2 (ja) 1994-05-20 2001-07-03 シャープ株式会社 気相成長装置および気相成長方法
KR960002534A (ko) 1994-06-07 1996-01-26 이노우에 아키라 감압·상압 처리장치
KR0144956B1 (ko) 1994-06-10 1998-08-17 김광호 반도체 장치의 배선 구조 및 그 형성방법
GB9411911D0 (en) 1994-06-14 1994-08-03 Swan Thomas & Co Ltd Improvements in or relating to chemical vapour deposition
KR100306527B1 (ko) 1994-06-15 2002-06-26 구사마 사부로 박막반도체장치의제조방법,박막반도체장치
US5518780A (en) 1994-06-16 1996-05-21 Ford Motor Company Method of making hard, transparent amorphous hydrogenated boron nitride films
US5423942A (en) 1994-06-20 1995-06-13 Texas Instruments Incorporated Method and apparatus for reducing etching erosion in a plasma containment tube
US5504042A (en) 1994-06-23 1996-04-02 Texas Instruments Incorporated Porous dielectric material with improved pore surface properties for electronics applications
US5510277A (en) 1994-06-29 1996-04-23 At&T Corp. Surface treatment for silicon substrates
JP2709568B2 (ja) 1994-06-30 1998-02-04 日本プレシジョン・サーキッツ株式会社 ダウンフロー型スピンドライヤ
US5826129A (en) 1994-06-30 1998-10-20 Tokyo Electron Limited Substrate processing system
US6022414A (en) 1994-07-18 2000-02-08 Semiconductor Equipment Group, Llc Single body injector and method for delivering gases to a surface
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5730801A (en) 1994-08-23 1998-03-24 Applied Materials, Inc. Compartnetalized substrate processing chamber
JPH0878347A (ja) 1994-09-06 1996-03-22 Komatsu Electron Metals Co Ltd エピタキシャル成長装置のサセプタ
US5669713A (en) 1994-09-27 1997-09-23 Rosemount Inc. Calibration of process control temperature transmitter
JPH0897167A (ja) 1994-09-28 1996-04-12 Tokyo Electron Ltd 処理装置及び熱処理装置
JP3632256B2 (ja) 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5514439A (en) 1994-10-14 1996-05-07 Sibley; Thomas Wafer support fixtures for rapid thermal processing
US5576629A (en) 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
CA2204736A1 (en) 1994-11-08 1996-05-23 Charles H. Ferguson An online service development tool with fee setting capabilities
US5562947A (en) 1994-11-09 1996-10-08 Sony Corporation Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment
US6699530B2 (en) 1995-07-06 2004-03-02 Applied Materials, Inc. Method for constructing a film on a semiconductor wafer
US5811022A (en) 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US5583736A (en) 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
FI100409B (fi) 1994-11-28 1997-11-28 Asm Int Menetelmä ja laitteisto ohutkalvojen valmistamiseksi
FI97730C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Laitteisto ohutkalvojen valmistamiseksi
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
US5558717A (en) 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
JPH08181135A (ja) 1994-12-22 1996-07-12 Sharp Corp 半導体装置の製造方法
US5776254A (en) 1994-12-28 1998-07-07 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming thin film by chemical vapor deposition
US5716133A (en) 1995-01-17 1998-02-10 Applied Komatsu Technology, Inc. Shielded heat sensor for measuring temperature
US5586585A (en) 1995-02-27 1996-12-24 Asyst Technologies, Inc. Direct loadlock interface
JP3151118B2 (ja) 1995-03-01 2001-04-03 東京エレクトロン株式会社 熱処理装置
AUPN164695A0 (en) 1995-03-10 1995-04-06 Luminis Pty Limited Improved induction nozzle and arrangement
US5662470A (en) 1995-03-31 1997-09-02 Asm International N.V. Vertical furnace
US5518549A (en) 1995-04-18 1996-05-21 Memc Electronic Materials, Inc. Susceptor and baffle therefor
JP3360098B2 (ja) 1995-04-20 2002-12-24 東京エレクトロン株式会社 処理装置のシャワーヘッド構造
US5852879A (en) 1995-04-26 1998-12-29 Schumaier; Daniel R. Moisture sensitive item drying appliance
SE506163C2 (sv) 1995-04-27 1997-11-17 Ericsson Telefon Ab L M Anordning vid ett kiselsubstrat med ett urtag för upptagande av ett element jämte förfarande för framställande av en dylik anordning
US5733820A (en) * 1995-04-27 1998-03-31 Sharp Kabushiki Kaisha Dry etching method
US6088216A (en) 1995-04-28 2000-07-11 International Business Machines Corporation Lead silicate based capacitor structures
US5661263A (en) 1995-05-10 1997-08-26 Phaeton, Llc Surface raceway and method
JP3028462B2 (ja) 1995-05-12 2000-04-04 東京エレクトロン株式会社 熱処理装置
US5985032A (en) 1995-05-17 1999-11-16 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus
US5761328A (en) 1995-05-22 1998-06-02 Solberg Creations, Inc. Computer automated system and method for converting source-documents bearing alphanumeric text relating to survey measurements
US5698036A (en) 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
US5540898A (en) 1995-05-26 1996-07-30 Vasogen Inc. Ozone generator with in-line ozone sensor
US5708825A (en) 1995-05-26 1998-01-13 Iconovex Corporation Automatic summary page creation and hyperlink generation
US5663899A (en) 1995-06-05 1997-09-02 Advanced Micro Devices Redundant thermocouple
US5982931A (en) 1995-06-07 1999-11-09 Ishimaru; Mikio Apparatus and method for the manipulation of image containing documents
US5683517A (en) 1995-06-07 1997-11-04 Applied Materials, Inc. Plasma reactor with programmable reactant gas distribution
US6190634B1 (en) 1995-06-07 2001-02-20 President And Fellows Of Harvard College Carbide nanomaterials
JPH08335558A (ja) 1995-06-08 1996-12-17 Nissin Electric Co Ltd 薄膜気相成長装置
JP3380091B2 (ja) 1995-06-09 2003-02-24 株式会社荏原製作所 反応ガス噴射ヘッド及び薄膜気相成長装置
JP3700733B2 (ja) 1995-06-12 2005-09-28 富士ゼロックス株式会社 文書管理装置及び文書管理方法
US5685912A (en) 1995-06-20 1997-11-11 Sony Corporation Pressure control system for semiconductor manufacturing equipment
USD392855S (en) 1995-06-26 1998-03-31 Pillow Daryl R Floor protection template for use while spray-painting door frames
US20020114886A1 (en) 1995-07-06 2002-08-22 Applied Materials, Inc. Method of tisin deposition using a chemical vapor deposition process
TW294820B (en) 1995-07-10 1997-01-01 Watkins Johnson Co Gas distribution apparatus
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5670786A (en) 1995-07-18 1997-09-23 Uvp, Inc. Multiple wavelength light source
JPH0936198A (ja) 1995-07-19 1997-02-07 Hitachi Ltd 真空処理装置およびそれを用いた半導体製造ライン
US6093252A (en) 1995-08-03 2000-07-25 Asm America, Inc. Process chamber with inner support
DE19528746C1 (de) 1995-08-04 1996-10-31 Siemens Ag Verfahren zum Erzeugen einer Siliziumdioxidschicht auf Oberflächenabschnitten einer Struktur
NO953217L (no) 1995-08-16 1997-02-17 Aker Eng As Metode og innretning ved rörbunter
JPH0964149A (ja) 1995-08-29 1997-03-07 Hitachi Electron Eng Co Ltd 半導体製造装置
US6113702A (en) 1995-09-01 2000-09-05 Asm America, Inc. Wafer support system
US6053982A (en) 1995-09-01 2000-04-25 Asm America, Inc. Wafer support system
JP3504784B2 (ja) 1995-09-07 2004-03-08 東京エレクトロン株式会社 熱処理方法
TW371796B (en) 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
US5791782A (en) 1995-09-21 1998-08-11 Fusion Systems Corporation Contact temperature probe with unrestrained orientation
JPH0989676A (ja) 1995-09-21 1997-04-04 Casio Comput Co Ltd 電子体温計
DE19535178C2 (de) 1995-09-22 2001-07-19 Jenoptik Jena Gmbh Einrichtung zum Ver- und Entriegeln einer Tür eines Behälters
US5611448A (en) 1995-09-25 1997-03-18 United Microelectronics Corporation Wafer container
US5997588A (en) 1995-10-13 1999-12-07 Advanced Semiconductor Materials America, Inc. Semiconductor processing system with gas curtain
DE29517100U1 (de) 1995-10-17 1997-02-13 Zimmer Johannes Strömungsteilungs- und -umformungskörper
TW356554B (en) 1995-10-23 1999-04-21 Watkins Johnson Co Gas injection system for semiconductor processing
US5801104A (en) 1995-10-24 1998-09-01 Micron Technology, Inc. Uniform dielectric film deposition on textured surfaces
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
KR100201386B1 (ko) 1995-10-28 1999-06-15 구본준 화학기상증착장비의 반응가스 분사장치
IL115931A0 (en) 1995-11-09 1996-01-31 Oramir Semiconductor Ltd Laser stripping improvement by modified gas composition
JP3796782B2 (ja) 1995-11-13 2006-07-12 アシスト シンコー株式会社 機械的インターフェイス装置
US5736314A (en) 1995-11-16 1998-04-07 Microfab Technologies, Inc. Inline thermo-cycler
JPH09148322A (ja) 1995-11-22 1997-06-06 Sharp Corp シリコン酸化膜の成膜方法及びプラズマｃｖｄ成膜装置
US5796074A (en) 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
US5768125A (en) 1995-12-08 1998-06-16 Asm International N.V. Apparatus for transferring a substantially circular article
US5584936A (en) 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
JPH09172055A (ja) 1995-12-19 1997-06-30 Fujitsu Ltd 静電チャック及びウエハの吸着方法
US5954375A (en) 1995-12-21 1999-09-21 Edstrom Industries, Inc. Sanitary fitting having ferrule with grooved undercut
US5697706A (en) 1995-12-26 1997-12-16 Chrysler Corporation Multi-point temperature probe
KR100267418B1 (ko) 1995-12-28 2000-10-16 엔도 마코토 플라스마처리방법및플라스마처리장치
US5679215A (en) 1996-01-02 1997-10-21 Lam Research Corporation Method of in situ cleaning a vacuum plasma processing chamber
US5650351A (en) 1996-01-11 1997-07-22 Vanguard International Semiconductor Company Method to form a capacitor having multiple pillars for advanced DRAMS
JPH09205130A (ja) 1996-01-17 1997-08-05 Applied Materials Inc ウェハ支持装置
US6017818A (en) 1996-01-22 2000-01-25 Texas Instruments Incorporated Process for fabricating conformal Ti-Si-N and Ti-B-N based barrier films with low defect density
US5754390A (en) 1996-01-23 1998-05-19 Micron Technology, Inc. Integrated capacitor bottom electrode for use with conformal dielectric
US5632919A (en) 1996-01-25 1997-05-27 T.G.M., Inc. Temperature controlled insulation system
JPH09213772A (ja) 1996-01-30 1997-08-15 Dainippon Screen Mfg Co Ltd 基板保持装置
AU1843597A (en) 1996-01-31 1997-08-22 Asm America, Inc. Model-based predictive control of thermal processing
US5554557A (en) 1996-02-02 1996-09-10 Vanguard International Semiconductor Corp. Method for fabricating a stacked capacitor with a self aligned node contact in a memory cell
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5732957A (en) 1996-02-09 1998-03-31 Yu; Chung-Hsiung Roller skate with auxiliary roller for assisting turning and braking action thereof
JP3769802B2 (ja) 1996-02-09 2006-04-26 株式会社日立製作所 半導体装置の製造方法
US6030902A (en) 1996-02-16 2000-02-29 Micron Technology Inc Apparatus and method for improving uniformity in batch processing of semiconductor wafers
SE9600705D0 (sv) 1996-02-26 1996-02-26 Abb Research Ltd A susceptor for a device for epitaxially growing objects and such a device
US5837320A (en) 1996-02-27 1998-11-17 The University Of New Mexico Chemical vapor deposition of metal sulfide films from metal thiocarboxylate complexes with monodenate or multidentate ligands
US5732744A (en) 1996-03-08 1998-03-31 Control Systems, Inc. Method and apparatus for aligning and supporting semiconductor process gas delivery and regulation components
US5656093A (en) 1996-03-08 1997-08-12 Applied Materials, Inc. Wafer spacing mask for a substrate support chuck and method of fabricating same
DE19609678C2 (de) 1996-03-12 2003-04-17 Infineon Technologies Ag Speicherzellenanordnung mit streifenförmigen, parallel verlaufenden Gräben und vertikalen MOS-Transistoren und Verfahren zu deren Herstellung
USD411516S (en) 1996-03-15 1999-06-29 Tokyo Electron Limited Gas diffusion plate for electrode of semiconductor wafer processing apparatus
US5732597A (en) 1996-03-19 1998-03-31 Hughes Electronics Pre-loaded self-aligning roller nut assembly for standard micrometer spindle and the like
USD380527S (en) 1996-03-19 1997-07-01 Cherle Velez Sink drain shield
US5653807A (en) 1996-03-28 1997-08-05 The United States Of America As Represented By The Secretary Of The Air Force Low temperature vapor phase epitaxial system for depositing thin layers of silicon-germanium alloy
US6106678A (en) 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US5851293A (en) 1996-03-29 1998-12-22 Atmi Ecosys Corporation Flow-stabilized wet scrubber system for treatment of process gases from semiconductor manufacturing operations
US5667592A (en) 1996-04-16 1997-09-16 Gasonics International Process chamber sleeve with ring seals for isolating individual process modules in a common cluster
KR100212132B1 (ko) 1996-04-24 1999-08-02 윤종용 횡형 확산로의 프로파일 열전대
US5819434A (en) 1996-04-25 1998-10-13 Applied Materials, Inc. Etch enhancement using an improved gas distribution plate
US6440221B2 (en) 1996-05-13 2002-08-27 Applied Materials, Inc. Process chamber having improved temperature control
USD386076S (en) 1996-05-14 1997-11-11 Camco Manufacturing, Inc. Awning clamp
US5844683A (en) 1996-05-22 1998-12-01 Applied Materials, Inc. Position sensor system for substrate holders
US5920798A (en) 1996-05-28 1999-07-06 Matsushita Battery Industrial Co., Ltd. Method of preparing a semiconductor layer for an optical transforming device
US6001183A (en) 1996-06-10 1999-12-14 Emcore Corporation Wafer carriers for epitaxial growth processes
US6534133B1 (en) 1996-06-14 2003-03-18 Research Foundation Of State University Of New York Methodology for in-situ doping of aluminum coatings
US6342277B1 (en) 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5801945A (en) 1996-06-28 1998-09-01 Lam Research Corporation Scheduling method for robotic manufacturing processes
US5779203A (en) 1996-06-28 1998-07-14 Edlinger; Erich Adjustable wafer cassette stand
US6183565B1 (en) 1997-07-08 2001-02-06 Asm International N.V Method and apparatus for supporting a semiconductor wafer during processing
US5950327A (en) 1996-07-08 1999-09-14 Speedfam-Ipec Corporation Methods and apparatus for cleaning and drying wafers
US5820366A (en) 1996-07-10 1998-10-13 Eaton Corporation Dual vertical thermal processing furnace
US5937142A (en) 1996-07-11 1999-08-10 Cvc Products, Inc. Multi-zone illuminator for rapid thermal processing
US5993916A (en) 1996-07-12 1999-11-30 Applied Materials, Inc. Method for substrate processing with improved throughput and yield
US5915562A (en) 1996-07-12 1999-06-29 Fluoroware, Inc. Transport module with latching door
EP0818671A3 (en) 1996-07-12 1998-07-08 Isuzu Ceramics Research Institute Co., Ltd. A ceramic sheath type thermocouple
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US5700729A (en) 1996-07-15 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Masked-gate MOS S/D implantation
US5827757A (en) 1996-07-16 1998-10-27 Direct Radiography Corp. Fabrication of large area x-ray image capturing element
EP0821395A3 (en) 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP3122617B2 (ja) 1996-07-19 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
US5781693A (en) 1996-07-24 1998-07-14 Applied Materials, Inc. Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5724748A (en) 1996-07-24 1998-03-10 Brooks; Ray G. Apparatus for packaging contaminant-sensitive articles and resulting package
US5987480A (en) 1996-07-25 1999-11-16 Donohue; Michael Method and system for delivering documents customized for a particular user over the internet using imbedded dynamic content
JPH1050635A (ja) 1996-07-29 1998-02-20 Kokusai Electric Co Ltd 金属薄膜の生成方法及びｃｖｄ装置
JPH1050800A (ja) 1996-08-05 1998-02-20 Canon Sales Co Inc 処理装置
US5891251A (en) 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
US5928426A (en) 1996-08-08 1999-07-27 Novellus Systems, Inc. Method and apparatus for treating exhaust gases from CVD, PECVD or plasma etch reactors
KR0183912B1 (ko) 1996-08-08 1999-05-01 김광호 다중 반응 챔버에 연결된 펌핑 설비 및 이를 사용하는 방법
US5916365A (en) 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
JP3122618B2 (ja) 1996-08-23 2001-01-09 東京エレクトロン株式会社 プラズマ処理装置
TW344847B (en) 1996-08-29 1998-11-11 Tokyo Electron Co Ltd Substrate treatment system, substrate transfer system, and substrate transfer method
US5806980A (en) 1996-09-11 1998-09-15 Novellus Systems, Inc. Methods and apparatus for measuring temperatures at high potential
US5857777A (en) 1996-09-25 1999-01-12 Claud S. Gordon Company Smart temperature sensing device
US5880980A (en) 1996-09-30 1999-03-09 Rockwell International Corporation Distributed decimation sample rate conversion
US6048154A (en) 1996-10-02 2000-04-11 Applied Materials, Inc. High vacuum dual stage load lock and method for loading and unloading wafers using a high vacuum dual stage load lock
USD403949S (en) 1996-10-03 1999-01-12 Shinagawa Shoko Co., Ltd. Insulating bushing
KR100492258B1 (ko) 1996-10-11 2005-09-02 가부시키가이샤 에바라 세이사꾸쇼 반응가스분출헤드
KR19980026850A (ko) 1996-10-11 1998-07-15 김광호 웨이퍼의 휨을 검사하는 기능을 갖는 급속 열처리 장비
US6071572A (en) 1996-10-15 2000-06-06 Applied Materials, Inc. Forming tin thin films using remote activated specie generation
US5818716A (en) 1996-10-18 1998-10-06 Taiwan Semiconductor Manufacturing Company Ltd. Dynamic lot dispatching required turn rate factory control system and method of operation thereof
US5928389A (en) 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
JP2983476B2 (ja) 1996-10-30 1999-11-29 キヤノン販売株式会社 成膜方法及び半導体装置の製造方法
US6073973A (en) 1996-10-31 2000-06-13 Stanley Aviation Corporation Lightweight positive lock coupling
US6347636B1 (en) 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
US6444037B1 (en) 1996-11-13 2002-09-03 Applied Materials, Inc. Chamber liner for high temperature processing chamber
US5855681A (en) 1996-11-18 1999-01-05 Applied Materials, Inc. Ultra high throughput wafer vacuum processing system
US6126744A (en) 1996-11-18 2000-10-03 Asm America, Inc. Method and system for adjusting semiconductor processing equipment
US6152070A (en) 1996-11-18 2000-11-28 Applied Materials, Inc. Tandem process chamber
JP3740587B2 (ja) 1996-11-25 2006-02-01 山里産業株式会社 熱電対
JPH10154712A (ja) 1996-11-25 1998-06-09 Fujitsu Ltd 半導体装置の製造方法
DE19648744A1 (de) 1996-11-25 1998-05-28 Basf Ag Verfahren zur Herstellung einer Polymerdispersion durch radikalische wäßrige Emulsionspolymerisation mit einer kontinuierlich hergestellten wäßrigen Monomerenemulsion
CN1186873A (zh) 1996-11-26 1998-07-08 西门子公司 带多个气体入口和独立质流控制回路的反应室的分布板
JP3901265B2 (ja) 1996-11-26 2007-04-04 大陽日酸株式会社 薄板状基体の搬送方法及び搬送装置
US5836483A (en) 1997-02-05 1998-11-17 Aerotech Dental Systems, Inc. Self-regulating fluid dispensing cap with safety pressure relief valve for dental/medical unit fluid bottles
JPH1160735A (ja) 1996-12-09 1999-03-05 Toshiba Corp ポリシランおよびパターン形成方法
US5753835A (en) 1996-12-12 1998-05-19 Caterpillar Inc. Receptacle for holding a sensing device
US6367410B1 (en) 1996-12-16 2002-04-09 Applied Materials, Inc. Closed-loop dome thermal control apparatus for a semiconductor wafer processing system
US5953635A (en) 1996-12-19 1999-09-14 Intel Corporation Interlayer dielectric with a composite dielectric stack
US6066204A (en) 1997-01-08 2000-05-23 Bandwidth Semiconductor, Llc High pressure MOCVD reactor system
US6189482B1 (en) 1997-02-12 2001-02-20 Applied Materials, Inc. High temperature, high flow rate chemical vapor deposition apparatus and related methods
NL1005102C2 (nl) 1997-01-27 1998-07-29 Advanced Semiconductor Mat Inrichting voor het behandelen van halfgeleiderschijven.
US5984391A (en) 1997-02-03 1999-11-16 Novellus Systems, Inc. Microfeature wafer handling apparatus and methods
JP3336897B2 (ja) 1997-02-07 2002-10-21 三菱住友シリコン株式会社 気相成長装置用サセプター
US5893741A (en) 1997-02-07 1999-04-13 National Science Council Method for simultaneously forming local interconnect with silicided elevated source/drain MOSFET's
US20020174106A1 (en) 1997-02-10 2002-11-21 Actioneer, Inc. Method and apparatus for receiving information in response to a request
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP3492135B2 (ja) 1997-02-13 2004-02-03 三菱重工業株式会社 熱流束計
US6127249A (en) 1997-02-20 2000-10-03 Micron Technology, Inc. Metal silicidation methods and methods for using same
US6447937B1 (en) 1997-02-26 2002-09-10 Kyocera Corporation Ceramic materials resistant to halogen plasma and components using the same
JPH10239165A (ja) 1997-02-27 1998-09-11 Sony Corp 基板の温度測定器、基板の温度を測定する方法および基板の加熱方法
US6461982B2 (en) 1997-02-27 2002-10-08 Micron Technology, Inc. Methods for forming a dielectric film
US6096267A (en) 1997-02-28 2000-08-01 Extraction Systems, Inc. System for detecting base contaminants in air
NL1005410C2 (nl) 1997-02-28 1998-08-31 Advanced Semiconductor Mat Stelsel voor het laden, behandelen en ontladen van op een drager aangebrachte substraten.
WO1998038508A1 (en) 1997-02-28 1998-09-03 Extraction Systems, Inc. System for detecting amine and other basic molecular contamination in a gas
US6174377B1 (en) 1997-03-03 2001-01-16 Genus, Inc. Processing chamber for atomic layer deposition processes
US5879459A (en) 1997-08-29 1999-03-09 Genus, Inc. Vertically-stacked process reactor and cluster tool system for atomic layer deposition
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
US6213708B1 (en) 1997-03-12 2001-04-10 Advanced Micro Devices, Inc. System for sorting multiple semiconductor wafers
JP3124506B2 (ja) 1997-03-14 2001-01-15 白光株式会社 ヒータ・センサ複合体
NL1005541C2 (nl) 1997-03-14 1998-09-18 Advanced Semiconductor Mat Werkwijze voor het koelen van een oven alsmede oven voorzien van een koelinrichting.
US6214122B1 (en) 1997-03-17 2001-04-10 Motorola, Inc. Rapid thermal processing susceptor
US5866795A (en) 1997-03-17 1999-02-02 Applied Materials, Inc. Liquid flow rate estimation and verification by direct liquid measurement
US6287988B1 (en) 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
NL1005625C2 (nl) 1997-03-25 1998-10-01 Asm Int Stelsel voor het overbrengen van wafers uit cassettes naar ovens alsmede werkwijze.
US6387827B1 (en) 1997-03-28 2002-05-14 Imec (Vzw) Method for growing thin silicon oxides on a silicon substrate using chlorine precursors
US5872065A (en) 1997-04-02 1999-02-16 Applied Materials Inc. Method for depositing low K SI-O-F films using SIF4 /oxygen chemistry
US6891138B2 (en) 1997-04-04 2005-05-10 Robert C. Dalton Electromagnetic susceptors with coatings for artificial dielectric systems and devices
NL1005802C2 (nl) 1997-04-11 1998-10-14 Asm Int Afvoersysteem voor een reactor alsmede processtelsel voorzien van een dergelijk afvoersysteem.
US6090442A (en) 1997-04-14 2000-07-18 University Technology Corporation Method of growing films on substrates at room temperatures using catalyzed binary reaction sequence chemistry
US5865205A (en) 1997-04-17 1999-02-02 Applied Materials, Inc. Dynamic gas flow controller
JP3752578B2 (ja) 1997-04-21 2006-03-08 株式会社フジキン 流体制御器用加熱装置
US6029602A (en) 1997-04-22 2000-02-29 Applied Materials, Inc. Apparatus and method for efficient and compact remote microwave plasma generation
US6026762A (en) 1997-04-23 2000-02-22 Applied Materials, Inc. Apparatus for improved remote microwave plasma source for use with substrate processing systems
JP3967424B2 (ja) 1997-04-30 2007-08-29 東京エレクトロン株式会社 真空処理装置及び圧力調整方法
US6190113B1 (en) 1997-04-30 2001-02-20 Applied Materials, Inc. Quartz pin lift for single wafer chemical vapor deposition/etch process chamber
NL1005963C2 (nl) 1997-05-02 1998-11-09 Asm Int Verticale oven voor het behandelen van halfgeleidersubstraten.
US6053983A (en) 1997-05-08 2000-04-25 Tokyo Electron, Ltd. Wafer for carrying semiconductor wafers and method detecting wafers on carrier
US5904170A (en) 1997-05-14 1999-05-18 Applied Materials, Inc. Pressure flow and concentration control of oxygen/ozone gas mixtures
JP3230051B2 (ja) 1997-05-16 2001-11-19 東京エレクトロン株式会社 乾燥処理方法及びその装置
US6390754B2 (en) 1997-05-21 2002-05-21 Tokyo Electron Limited Wafer processing apparatus, method of operating the same and wafer detecting system
JPH1144799A (ja) 1997-05-27 1999-02-16 Ushio Inc 光路分割型紫外線照射装置
US5937323A (en) 1997-06-03 1999-08-10 Applied Materials, Inc. Sequencing of the recipe steps for the optimal low-k HDP-CVD processing
US6201999B1 (en) 1997-06-09 2001-03-13 Applied Materials, Inc. Method and apparatus for automatically generating schedules for wafer processing within a multichamber semiconductor wafer processing tool
US6104401A (en) 1997-06-12 2000-08-15 Netscape Communications Corporation Link filters
EP0887632A1 (en) 1997-06-24 1998-12-30 Isuzu Ceramics Research Institute Co., Ltd. A ceramic thermocouple for measuring temperature of molten metal
US5968275A (en) 1997-06-25 1999-10-19 Lam Research Corporation Methods and apparatus for passivating a substrate in a plasma reactor
US5759281A (en) 1997-06-30 1998-06-02 Emcore Corporation CVD reactor for uniform heating with radiant heating filaments
JP3957818B2 (ja) 1997-07-02 2007-08-15 富士通株式会社 ライブラリ装置用カートリッジ移送ロボット
NL1006461C2 (nl) 1997-07-03 1999-01-05 Asm Int Opslagsamenstel voor wafers.
FI972874A0 (fi) 1997-07-04 1997-07-04 Mikrokemia Oy Foerfarande och anordning foer framstaellning av tunnfilmer
US6531193B2 (en) 1997-07-07 2003-03-11 The Penn State Research Foundation Low temperature, high quality silicon dioxide thin films deposited using tetramethylsilane (TMS) for stress control and coverage applications
US6576064B2 (en) 1997-07-10 2003-06-10 Sandia Corporation Support apparatus for semiconductor wafer processing
US6024799A (en) 1997-07-11 2000-02-15 Applied Materials, Inc. Chemical vapor deposition manifold
US6312525B1 (en) 1997-07-11 2001-11-06 Applied Materials, Inc. Modular architecture for semiconductor wafer fabrication equipment
US6083321A (en) 1997-07-11 2000-07-04 Applied Materials, Inc. Fluid delivery system and method
US5975492A (en) 1997-07-14 1999-11-02 Brenes; Arthur Bellows driver slot valve
JP3362113B2 (ja) 1997-07-15 2003-01-07 日本碍子株式会社 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法
US6176929B1 (en) 1997-07-22 2001-01-23 Ebara Corporation Thin-film deposition apparatus
US6099596A (en) 1997-07-23 2000-08-08 Applied Materials, Inc. Wafer out-of-pocket detection tool
US6020243A (en) 1997-07-24 2000-02-01 Texas Instruments Incorporated Zirconium and/or hafnium silicon-oxynitride gate dielectric
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
KR100385946B1 (ko) 1999-12-08 2003-06-02 삼성전자주식회사 원자층 증착법을 이용한 금속층 형성방법 및 그 금속층을장벽금속층, 커패시터의 상부전극, 또는 하부전극으로구비한 반도체 소자
US5827420A (en) 1997-07-29 1998-10-27 World Precision Instruments, Inc. Method and apparatus for the generation of nitric oxide
US6135460A (en) 1997-07-31 2000-10-24 Texas Instruments Incorporated Method of and apparatus for purifying reduced pressure process chambers
US5884640A (en) 1997-08-07 1999-03-23 Applied Materials, Inc. Method and apparatus for drying substrates
US7393561B2 (en) 1997-08-11 2008-07-01 Applied Materials, Inc. Method and apparatus for layer by layer deposition of thin films
US6321680B2 (en) 1997-08-11 2001-11-27 Torrex Equipment Corporation Vertical plasma enhanced process apparatus and method
US20030049372A1 (en) 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JP3317209B2 (ja) 1997-08-12 2002-08-26 東京エレクトロンエイ・ティー株式会社 プラズマ処理装置及びプラズマ処理方法
JP3425592B2 (ja) 1997-08-12 2003-07-14 東京エレクトロン株式会社 処理装置
US6121158A (en) 1997-08-13 2000-09-19 Sony Corporation Method for hardening a photoresist material formed on a substrate
US6530994B1 (en) 1997-08-15 2003-03-11 Micro C Technologies, Inc. Platform for supporting a semiconductor substrate and method of supporting a substrate during rapid high temperature processing
US6090212A (en) 1997-08-15 2000-07-18 Micro C Technologies, Inc. Substrate platform for a semiconductor substrate during rapid high temperature processing and method of supporting a substrate
USD404372S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Ring for use in a semiconductor wafer heat processing apparatus
US6242359B1 (en) 1997-08-20 2001-06-05 Air Liquide America Corporation Plasma cleaning and etching methods using non-global-warming compounds
USD404370S (en) 1997-08-20 1999-01-19 Tokyo Electron Limited Cap for use in a semiconductor wafer heat processing apparatus
KR100253664B1 (ko) 1997-08-22 2000-04-15 이해광 폴리이미드 건조기의 작동 시스템
US6104011A (en) 1997-09-04 2000-08-15 Watlow Electric Manufacturing Company Sheathed thermocouple with internal coiled wires
AUPO904597A0 (en) 1997-09-08 1997-10-02 Canon Information Systems Research Australia Pty Ltd Method for non-linear document conversion and printing
US6027163A (en) 1997-09-10 2000-02-22 Graco Children's Products Inc. Juvenile carrier with moveable canopy
US6258170B1 (en) 1997-09-11 2001-07-10 Applied Materials, Inc. Vaporization and deposition apparatus
JP3581537B2 (ja) 1997-09-24 2004-10-27 三菱重工業株式会社 高周波加熱コイルの設置間隙保持装置
US6348376B2 (en) 1997-09-29 2002-02-19 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact and capacitor of semiconductor device using the same
US6161500A (en) 1997-09-30 2000-12-19 Tokyo Electron Limited Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions
US6243654B1 (en) 1997-10-07 2001-06-05 Telemonitor, Inc. Transducer assembly with smart connector
JPH11118615A (ja) 1997-10-09 1999-04-30 Kakunenryo Cycle Kaihatsu Kiko 伸縮性を有する被測定物用温度センサ
US6624064B1 (en) 1997-10-10 2003-09-23 Applied Materials, Inc. Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application
US5908672A (en) 1997-10-15 1999-06-01 Applied Materials, Inc. Method and apparatus for depositing a planarized passivation layer
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
DE69838484T2 (de) 1997-11-03 2008-06-26 Asm America Inc., Phoenix Hochtemperatur-prozesskammer mit langer lebensdauer
EP1036407A1 (en) 1997-11-03 2000-09-20 ASM America, Inc. Method of processing wafers with low mass support
US6164894A (en) 1997-11-04 2000-12-26 Cheng; David Method and apparatus for integrated wafer handling and testing
JPH11140648A (ja) 1997-11-07 1999-05-25 Tokyo Electron Ltd プロセスチャンバ装置及び処理装置
JP3050193B2 (ja) 1997-11-12 2000-06-12 日本電気株式会社 半導体装置及びその製造方法
US6136211A (en) 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process
GB9724168D0 (en) 1997-11-14 1998-01-14 Air Prod & Chem Gas control device and method of supplying gas
US6068441A (en) 1997-11-21 2000-05-30 Asm America, Inc. Substrate transfer system for semiconductor processing equipment
US6574644B2 (en) 1997-11-26 2003-06-03 Siemens Corporate Research, Inc Automatic capturing of hyperlink specifications for multimedia documents
EP2099061A3 (en) 1997-11-28 2013-06-12 Mattson Technology, Inc. Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing
US6013920A (en) 1997-11-28 2000-01-11 Fortrend Engineering Coirporation Wafer-mapping load post interface having an effector position sensing device
US6079356A (en) 1997-12-02 2000-06-27 Applied Materials, Inc. Reactor optimized for chemical vapor deposition of titanium
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6432479B2 (en) 1997-12-02 2002-08-13 Applied Materials, Inc. Method for in-situ, post deposition surface passivation of a chemical vapor deposited film
KR100295043B1 (ko) 1997-12-03 2001-10-19 윤종용 저유전상수절연막을층간절연막으로사용하는반도체장치의금속막형성방법
US6248168B1 (en) 1997-12-15 2001-06-19 Tokyo Electron Limited Spin coating apparatus including aging unit and solvent replacement unit
JPH11319545A (ja) 1997-12-15 1999-11-24 Canon Inc プラズマ処理方法及び基体の処理方法
JPH11183265A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JPH11183264A (ja) 1997-12-16 1999-07-09 Tokyo Yogyo Co Ltd 熱電対をもつ温度測定器
JP3283459B2 (ja) 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
EP0926731A1 (en) 1997-12-18 1999-06-30 STMicroelectronics S.r.l. Process for the final passivation of intergrated circuits
US5897379A (en) 1997-12-19 1999-04-27 Sharp Microelectronics Technology, Inc. Low temperature system and method for CVD copper removal
US6093611A (en) 1997-12-19 2000-07-25 Advanced Micro Devices, Inc. Oxide liner for high reliability with reduced encroachment of the source/drain region
US6099649A (en) 1997-12-23 2000-08-08 Applied Materials, Inc. Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal
KR100273261B1 (ko) 1997-12-26 2000-12-15 김영환 반도체 화학기상증착장비의 가스혼합장치
JPH11195688A (ja) 1997-12-26 1999-07-21 Mc Electronics Kk 基板処理装置
KR100249391B1 (ko) 1997-12-30 2000-03-15 김영환 가열장치
EP0932194A1 (en) 1997-12-30 1999-07-28 International Business Machines Corporation Method and system for semiconductor wafer fabrication process real-time in-situ interactive supervision
USD409894S (en) 1997-12-30 1999-05-18 Mcclurg Ben B Sheet rock plug
KR100269328B1 (ko) 1997-12-31 2000-10-16 윤종용 원자층 증착 공정을 이용하는 도전층 형성방법
JP3314151B2 (ja) 1998-01-05 2002-08-12 株式会社日立国際電気 プラズマｃｖｄ装置及び半導体装置の製造方法
KR100275727B1 (ko) 1998-01-06 2001-01-15 윤종용 반도체 장치의 커패시터 형성방법
WO1999036336A1 (en) 1998-01-16 1999-07-22 Pri Automation, Inc. Semiconductor wafer cassette positioning and detection mechanism
JPH11274067A (ja) 1998-01-21 1999-10-08 Mitsubishi Electric Corp Ｘ線マスクの応力調整方法
NL1008143C2 (nl) 1998-01-27 1999-07-28 Asm Int Stelsel voor het behandelen van wafers.
US6091062A (en) 1998-01-27 2000-07-18 Kinetrix, Inc. Method and apparatus for temperature control of a semiconductor electrical-test contractor assembly
US6039809A (en) 1998-01-27 2000-03-21 Mitsubishi Materials Silicon Corporation Method and apparatus for feeding a gas for epitaxial growth
US6125789A (en) 1998-01-30 2000-10-03 Applied Materials, Inc. Increasing the sensitivity of an in-situ particle monitor
TWI237305B (en) 1998-02-04 2005-08-01 Nikon Corp Exposure apparatus and positioning apparatus of substrate receiving cassette
US7354873B2 (en) 1998-02-05 2008-04-08 Asm Japan K.K. Method for forming insulation film
US6383955B1 (en) 1998-02-05 2002-05-07 Asm Japan K.K. Silicone polymer insulation film on semiconductor substrate and method for forming the film
TW437017B (en) 1998-02-05 2001-05-28 Asm Japan Kk Silicone polymer insulation film on semiconductor substrate and method for formation thereof
US7582575B2 (en) 1998-02-05 2009-09-01 Asm Japan K.K. Method for forming insulation film
US6635578B1 (en) 1998-02-09 2003-10-21 Applied Materials, Inc Method of operating a dual chamber reactor with neutral density decoupled from ion density
US6352049B1 (en) 1998-02-09 2002-03-05 Applied Materials, Inc. Plasma assisted processing chamber with separate control of species density
US6074514A (en) 1998-02-09 2000-06-13 Applied Materials, Inc. High selectivity etch using an external plasma discharge
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6050506A (en) 1998-02-13 2000-04-18 Applied Materials, Inc. Pattern of apertures in a showerhead for chemical vapor deposition
JPH11238688A (ja) 1998-02-23 1999-08-31 Shin Etsu Handotai Co Ltd 薄膜の製造方法
US6072163A (en) 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US5897348A (en) 1998-03-13 1999-04-27 Texas Instruments - Acer Incorporated Low mask count self-aligned silicided CMOS transistors with a high electrostatic discharge resistance
US7181501B2 (en) 1998-03-19 2007-02-20 Isochron, Inc. Remote data acquisition, transmission and analysis system including handheld wireless equipment
WO1999049705A1 (fr) 1998-03-20 1999-09-30 Tokyo Electron Limited Dispositif de traitement plasmique
JP3656701B2 (ja) 1998-03-23 2005-06-08 東京エレクトロン株式会社 処理装置
NL1008749C2 (nl) 1998-03-30 1999-10-05 Asm Int Werkwijze voor het chemisch behandelen van een halfgeleidersubstraat.
JP3554219B2 (ja) 1998-03-31 2004-08-18 キヤノン株式会社 排気装置と排気方法、および堆積膜形成装置と堆積膜形成方法
JPH11287715A (ja) 1998-04-02 1999-10-19 Canon Inc 熱電対
SE9801190D0 (sv) 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
US6015465A (en) 1998-04-08 2000-01-18 Applied Materials, Inc. Temperature control system for semiconductor process chamber
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
KR100265287B1 (ko) 1998-04-21 2000-10-02 윤종용 반도체소자 제조용 식각설비의 멀티챔버 시스템
US6079927A (en) 1998-04-22 2000-06-27 Varian Semiconductor Equipment Associates, Inc. Automated wafer buffer for use with wafer processing equipment
KR100376984B1 (ko) 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376983B1 (ko) 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6060721A (en) 1998-05-06 2000-05-09 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus for detecting correct positioning of a wafer cassette
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20010016273A1 (en) 1998-05-08 2001-08-23 Krishnan Narasimhan Multilayer cvd coated article and process for producing same
TW446995B (en) 1998-05-11 2001-07-21 Semitool Inc Temperature control system for a thermal reactor
US6218288B1 (en) 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
NL1009171C2 (nl) 1998-05-14 1999-12-10 Asm Int Waferrek voorzien van een gasverdeelinrichting.
KR100309918B1 (ko) 1998-05-16 2001-12-17 윤종용 광시야각액정표시장치및그제조방법
US6284050B1 (en) 1998-05-18 2001-09-04 Novellus Systems, Inc. UV exposure for improving properties and adhesion of dielectric polymer films formed by chemical vapor deposition
JP3208376B2 (ja) 1998-05-20 2001-09-10 株式会社半導体プロセス研究所 成膜方法及び半導体装置の製造方法
JPH11343571A (ja) 1998-05-29 1999-12-14 Ngk Insulators Ltd サセプター
KR20000000946A (ko) 1998-06-05 2000-01-15 주재현 기화기 및 이를 사용한 화학 기상 증착장치
NL1009327C2 (nl) 1998-06-05 1999-12-10 Asm Int Werkwijze en inrichting voor het overbrengen van wafers.
JPH11354637A (ja) 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6146463A (en) 1998-06-12 2000-11-14 Applied Materials, Inc. Apparatus and method for aligning a substrate on a support member
US20020009861A1 (en) 1998-06-12 2002-01-24 Pravin K. Narwankar Method and apparatus for the formation of dielectric layers
US6148761A (en) 1998-06-16 2000-11-21 Applied Materials, Inc. Dual channel gas distribution plate
US6302964B1 (en) 1998-06-16 2001-10-16 Applied Materials, Inc. One-piece dual gas faceplate for a showerhead in a semiconductor wafer processing system
US6086677A (en) 1998-06-16 2000-07-11 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
JP2963443B1 (ja) 1998-06-19 1999-10-18 キヤノン販売株式会社 半導体装置の製造装置
KR20000002833A (ko) 1998-06-23 2000-01-15 윤종용 반도체 웨이퍼 보트
USD412512S (en) 1998-06-24 1999-08-03 Marc H Boisvert Tool holding device
JP3333135B2 (ja) 1998-06-25 2002-10-07 東京エレクトロン株式会社 熱処理装置及び熱処理方法
US6015459A (en) 1998-06-26 2000-01-18 Extreme Devices, Inc. Method for doping semiconductor materials
JP3472482B2 (ja) 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
US6232248B1 (en) 1998-07-03 2001-05-15 Tokyo Electron Limited Single-substrate-heat-processing method for performing reformation and crystallization
US6335293B1 (en) 1998-07-13 2002-01-01 Mattson Technology, Inc. Systems and methods for two-sided etch of a semiconductor substrate
US6182603B1 (en) 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6210485B1 (en) 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
JP2000040728A (ja) 1998-07-22 2000-02-08 Nippon Asm Kk ウェハ搬送機構
JP4641569B2 (ja) 1998-07-24 2011-03-02 日本碍子株式会社 窒化アルミニウム質焼結体、耐蝕性部材、金属埋設および半導体保持装置
US20010001384A1 (en) 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
NL1009767C2 (nl) 1998-07-29 2000-02-04 Asm Int Werkwijze en inrichting voor het etsen van een substraat.
US6344232B1 (en) 1998-07-30 2002-02-05 The United States Of America As Represented By The Secretary Of The Air Force Computer controlled temperature and oxygen maintenance for fiber coating CVD
KR100297552B1 (ko) 1998-08-03 2001-11-30 윤종용 반도체소자제조용식각장치의절연창
KR100275738B1 (ko) 1998-08-07 2000-12-15 윤종용 원자층 증착법을 이용한 박막 제조방법
USD412270S (en) 1998-08-10 1999-07-27 David Frank Fredrickson Article lifter
US6462310B1 (en) 1998-08-12 2002-10-08 Asml Us, Inc Hot wall rapid thermal processor
JP2000068355A (ja) 1998-08-21 2000-03-03 Dainippon Screen Mfg Co Ltd 基板処理装置
US6596398B1 (en) 1998-08-21 2003-07-22 Atofina Chemicals, Inc. Solar control coated glass
US6133161A (en) 1998-08-27 2000-10-17 Micron Technology, Inc. Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
US6569971B2 (en) 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
US6427622B2 (en) 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
US6323081B1 (en) 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6727190B2 (en) 1998-09-03 2004-04-27 Micron Technology, Inc. Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials
JP3830670B2 (ja) 1998-09-03 2006-10-04 三菱電機株式会社 半導体製造装置
KR100566905B1 (ko) 1998-09-11 2006-07-03 에이에스엠지니텍코리아 주식회사 표면 촉매를 이용한 화학 증착방법_
US6344084B1 (en) 1998-09-11 2002-02-05 Japan Science And Technology Corporation Combinatorial molecular layer epitaxy device
US6284149B1 (en) 1998-09-18 2001-09-04 Applied Materials, Inc. High-density plasma etching of carbon-based low-k materials in a integrated circuit
US6187672B1 (en) 1998-09-22 2001-02-13 Conexant Systems, Inc. Interconnect with low dielectric constant insulators for semiconductor integrated circuit manufacturing
KR100646906B1 (ko) 1998-09-22 2006-11-17 동경 엘렉트론 주식회사 기판처리장치 및 기판처리방법
US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6143082A (en) 1998-10-08 2000-11-07 Novellus Systems, Inc. Isolation of incompatible processes in a multi-station processing chamber
US6257758B1 (en) 1998-10-09 2001-07-10 Claud S. Gordon Company Surface temperature sensor
NL1010317C2 (nl) 1998-10-14 2000-05-01 Asm Int Sorteer/opslaginrichting voor wafers en werkwijze voor het hanteren daarvan.
USD451893S1 (en) 1998-10-15 2001-12-11 Meto International Gmbh Arrangement of aluminum foil coils forming an inductor of a resonant frequency identification element
US6462671B2 (en) 1998-10-20 2002-10-08 Brendyl Trent Bushner Remote securities based data reception and order system
US20030101938A1 (en) 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
US6454860B2 (en) 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
JP3234576B2 (ja) 1998-10-30 2001-12-04 アプライド マテリアルズ インコーポレイテッド 半導体製造装置におけるウェハ支持装置
US6063196A (en) 1998-10-30 2000-05-16 Applied Materials, Inc. Semiconductor processing chamber calibration tool
KR100317238B1 (ko) 1998-11-03 2002-02-19 윤종용 가열로 온도검출용 스파이크 열전대 소자_
US6423613B1 (en) 1998-11-10 2002-07-23 Micron Technology, Inc. Low temperature silicon wafer bond process with bulk material bond strength
US6183564B1 (en) 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
US6214717B1 (en) 1998-11-16 2001-04-10 Taiwan Semiconductor Manufacturing Company Method for adding plasma treatment on bond pad to prevent bond pad staining problems
JP2000150617A (ja) 1998-11-17 2000-05-30 Tokyo Electron Ltd 搬送装置
JP3664897B2 (ja) 1998-11-18 2005-06-29 東京エレクトロン株式会社 縦型熱処理装置
US6143079A (en) 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6113703A (en) 1998-11-25 2000-09-05 Applied Materials, Inc. Method and apparatus for processing the upper and lower faces of a wafer
DE19956531A1 (de) 1998-11-27 2000-05-31 Hyundai Electronics Ind Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung
US6383300B1 (en) 1998-11-27 2002-05-07 Tokyo Electron Ltd. Heat treatment apparatus and cleaning method of the same
RU2141647C1 (ru) 1998-11-30 1999-11-20 Войналович Александр Владимирович Способ контроля анализируемой поверхности и сканирующий анализатор поверхности
US6283692B1 (en) 1998-12-01 2001-09-04 Applied Materials, Inc. Apparatus for storing and moving a cassette
JP2000174123A (ja) 1998-12-09 2000-06-23 Nec Corp 半導体装置及びその製造方法
US6310328B1 (en) 1998-12-10 2001-10-30 Mattson Technologies, Inc. Rapid thermal processing chamber for processing multiple wafers
US6364954B2 (en) 1998-12-14 2002-04-02 Applied Materials, Inc. High temperature chemical vapor deposition chamber
US20010052556A1 (en) 1998-12-14 2001-12-20 Weichi Ting Injector
JP2000183346A (ja) 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
JP3375294B2 (ja) 1998-12-17 2003-02-10 東京エレクトロン株式会社 処理装置、処理システムおよび該装置における清浄エアの供給方法
US6255221B1 (en) 1998-12-17 2001-07-03 Lam Research Corporation Methods for running a high density plasma etcher to achieve reduced transistor device damage
US6129954A (en) 1998-12-22 2000-10-10 General Electric Company Method for thermally spraying crack-free mullite coatings on ceramic-based substrates
US6607948B1 (en) 1998-12-24 2003-08-19 Kabushiki Kaisha Toshiba Method of manufacturing a substrate using an SiGe layer
US6496819B1 (en) 1998-12-28 2002-12-17 Oracle Corporation Rewriting a query in terms of a summary based on functional dependencies and join backs, and based on join derivability
KR100281094B1 (ko) 1998-12-30 2001-02-01 서평원 이동 통신 시스템에서 셀 탐색 방법
US6137240A (en) 1998-12-31 2000-10-24 Lumion Corporation Universal ballast control circuit
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
JP3433392B2 (ja) 1999-01-12 2003-08-04 セントラル硝子株式会社 クリーニングガス及び真空処理装置のクリーニング方法
NL1011017C2 (nl) 1999-01-13 2000-07-31 Asm Int Inrichting voor het positioneren van een wafer.
KR100331544B1 (ko) 1999-01-18 2002-04-06 윤종용 반응챔버에 가스를 유입하는 방법 및 이에 사용되는 샤워헤드
JP3119641B2 (ja) 1999-01-19 2000-12-25 九州日本電気株式会社 縦型熱処理装置
US6490493B1 (en) 1999-01-21 2002-12-03 Rosemount Inc. Industrial process device management software
US7217325B2 (en) 1999-01-22 2007-05-15 Semitool, Inc. System for processing a workpiece
TW455912B (en) 1999-01-22 2001-09-21 Sony Corp Method and apparatus for film deposition
JP3579278B2 (ja) 1999-01-26 2004-10-20 東京エレクトロン株式会社 縦型熱処理装置及びシール装置
JP2987148B1 (ja) 1999-01-26 1999-12-06 国際電気株式会社 基板処理装置
US6250747B1 (en) 1999-01-28 2001-06-26 Hewlett-Packard Company Print cartridge with improved back-pressure regulation
US6737716B1 (en) 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US6044860A (en) 1999-02-01 2000-04-04 Spx Corporation Adjustable lockout device for knife gate valves
US6374831B1 (en) 1999-02-04 2002-04-23 Applied Materials, Inc. Accelerated plasma clean
US6281141B1 (en) 1999-02-08 2001-08-28 Steag Rtp Systems, Inc. Process for forming thin dielectric layers in semiconductor devices
IT1308606B1 (it) 1999-02-12 2002-01-08 Lpe Spa Dispositivo per maneggiare substrati mediante un istema autolivellante a depressione in reattori epistassiali ad induzione con suscettore
JP2002536549A (ja) 1999-02-12 2002-10-29 ゲレスト インコーポレイテッド 窒化タングステンの化学蒸着
US6190037B1 (en) 1999-02-19 2001-02-20 Applied Materials, Inc. Non-intrusive, on-the-fly (OTF) temperature measurement and monitoring system
JP2000249058A (ja) 1999-02-26 2000-09-12 Ebara Corp トラップ装置
EP1161572B1 (de) 1999-03-03 2003-06-18 Widia GmbH Schneideinsatz zum zerspanen von metallischen werkstoffen mit einer molybdänsulfid enthaltenden beschichtung und verfahren zu dessen herstellung
US6540838B2 (en) 2000-11-29 2003-04-01 Genus, Inc. Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
US6426125B1 (en) 1999-03-17 2002-07-30 General Electric Company Multilayer article and method of making by ARC plasma deposition
JP2000269163A (ja) 1999-03-18 2000-09-29 Sony Corp 金属膜の形成方法及び配線の形成方法
US6022802A (en) 1999-03-18 2000-02-08 Taiwan Semiconductor Manufacturing Company Low dielectric constant intermetal dielectric (IMD) by formation of air gap between metal lines
US6250250B1 (en) 1999-03-18 2001-06-26 Yuri Maishev Multiple-cell source of uniform plasma
KR100596822B1 (ko) 1999-03-30 2006-07-03 동경 엘렉트론 주식회사 플라즈마 처리 장치, 그 보수 방법 및 그 시공 방법
US20020052119A1 (en) 1999-03-31 2002-05-02 Patrick A. Van Cleemput In-situ flowing bpsg gap fill process using hdp
JP3250154B2 (ja) 1999-03-31 2002-01-28 株式会社スーパーシリコン研究所 半導体ウエハ製造装置
JP3398936B2 (ja) 1999-04-09 2003-04-21 日本エー・エス・エム株式会社 半導体処理装置
US6263830B1 (en) 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
TW465017B (en) 1999-04-13 2001-11-21 Applied Materials Inc A corrosion-resistant protective coating for an apparatus and method for processing a substrate
US6264467B1 (en) 1999-04-14 2001-07-24 Applied Materials, Inc. Micro grooved support surface for reducing substrate wear and slip formation
US6326597B1 (en) 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
JP3782938B2 (ja) 1999-04-20 2006-06-07 東京エレクトロン株式会社 ＩＣ製造におけるＰＥＣＶＤ−ＴｉフィルムとＣＶＤ−ＴｉＮフィルムの単一室処理方法
US6265311B1 (en) 1999-04-27 2001-07-24 Tokyo Electron Limited PECVD of TaN films from tantalum halide precursors
US6410433B1 (en) 1999-04-27 2002-06-25 Tokyo Electron Limited Thermal CVD of TaN films from tantalum halide precursors
US7588720B2 (en) 1999-04-30 2009-09-15 Tso3, Inc. Method and apparatus for ozone sterilization
JP3965258B2 (ja) 1999-04-30 2007-08-29 日本碍子株式会社 半導体製造装置用のセラミックス製ガス供給構造
KR100347379B1 (ko) 1999-05-01 2002-08-07 주식회사 피케이엘 복수매 기판의 박막 증착 공정이 가능한 원자층 증착장치
JP2000323487A (ja) 1999-05-14 2000-11-24 Tokyo Electron Ltd 枚葉式熱処理装置
JP3072989B1 (ja) 1999-05-14 2000-08-07 日本エー・エス・エム株式会社 半導体基板上に薄膜を形成する成膜装置における成膜方法
JP4294791B2 (ja) 1999-05-17 2009-07-15 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
JP2000329447A (ja) 1999-05-17 2000-11-30 Matsushita Refrig Co Ltd 冷蔵庫および除霜用ヒーター
US6423949B1 (en) 1999-05-19 2002-07-23 Applied Materials, Inc. Multi-zone resistive heater
US6617553B2 (en) 1999-05-19 2003-09-09 Applied Materials, Inc. Multi-zone resistive heater
US6440261B1 (en) 1999-05-25 2002-08-27 Applied Materials, Inc. Dual buffer chamber cluster tool for semiconductor wafer processing
US6119710A (en) 1999-05-26 2000-09-19 Cyber Instrument Technologies Llc Method for wide range gas flow system with real time flow measurement and correction
US6461801B1 (en) 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
EP1109210A1 (en) 1999-05-28 2001-06-20 Tokyo Electron Limited Ozone treatment device of semiconductor process system
US20020033183A1 (en) 1999-05-29 2002-03-21 Sheng Sun Method and apparatus for enhanced chamber cleaning
JP3668079B2 (ja) 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
US6200897B1 (en) 1999-06-06 2001-03-13 United Semiconductor Corp. Method for manufacturing even dielectric layer
JP3940546B2 (ja) 1999-06-07 2007-07-04 株式会社東芝 パターン形成方法およびパターン形成材料
US6656281B1 (en) 1999-06-09 2003-12-02 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US6555183B2 (en) 1999-06-11 2003-04-29 Applied Materials, Inc. Plasma treatment of a titanium nitride film formed by chemical vapor deposition
US6548402B2 (en) 1999-06-11 2003-04-15 Applied Materials, Inc. Method of depositing a thick titanium nitride film
US6281098B1 (en) 1999-06-15 2001-08-28 Midwest Research Institute Process for Polycrystalline film silicon growth
TW466576B (en) 1999-06-15 2001-12-01 Ebara Corp Substrate processing apparatus
JP2001004062A (ja) 1999-06-17 2001-01-09 Benkan Corp 流量制御用バルブ
JP2001007102A (ja) 1999-06-17 2001-01-12 Mitsubishi Electric Corp 半導体形成方法および半導体製造装置
US6821571B2 (en) 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6528752B1 (en) 1999-06-18 2003-03-04 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
US6539891B1 (en) 1999-06-19 2003-04-01 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6812157B1 (en) 1999-06-24 2004-11-02 Prasad Narhar Gadgil Apparatus for atomic layer chemical vapor deposition
US6314974B1 (en) 1999-06-28 2001-11-13 Fairchild Semiconductor Corporation Potted transducer array with matching network in a multiple pass configuration
US6245192B1 (en) 1999-06-30 2001-06-12 Lam Research Corporation Gas distribution apparatus for semiconductor processing
FR2795745B1 (fr) 1999-06-30 2001-08-03 Saint Gobain Vitrage Procede de depot d'une couche a base de tungstene et/ou de molybdene sur un substrat verrier, ceramique ou vitroceramique, et substrat ainsi revetu
US6587108B1 (en) 1999-07-01 2003-07-01 Honeywell Inc. Multivariable process matrix display and methods regarding same
JP3252835B2 (ja) 1999-07-02 2002-02-04 松下電器産業株式会社 半導体装置およびその製造方法
US6151446A (en) 1999-07-06 2000-11-21 Applied Materials, Inc. Apparatus and method for thermally processing substrates including a processor using multiple detection signals
JP4288767B2 (ja) 1999-07-07 2009-07-01 東京エレクトロン株式会社 半導体装置の製造方法
JP2001023955A (ja) 1999-07-07 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US6240875B1 (en) 1999-07-07 2001-06-05 Asm International N.V. Vertical oven with a boat for the uniform treatment of wafers
US6214121B1 (en) 1999-07-07 2001-04-10 Applied Materials, Inc. Pedestal with a thermally controlled platen
US6238734B1 (en) 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
JP2001023872A (ja) 1999-07-09 2001-01-26 Hitachi Ltd 半導体基板処理装置
US6375749B1 (en) 1999-07-14 2002-04-23 Seh America, Inc. Susceptorless semiconductor wafer support and reactor system for epitaxial layer growth
US6368988B1 (en) 1999-07-16 2002-04-09 Micron Technology, Inc. Combined gate cap or digit line and spacer deposition using HDP
US6297539B1 (en) 1999-07-19 2001-10-02 Sharp Laboratories Of America, Inc. Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same
FI110311B (fi) 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
KR100327346B1 (ko) 1999-07-20 2002-03-06 윤종용 선택적 폴리머 증착을 이용한 플라즈마 식각방법 및 이를이용한 콘택홀 형성방법
US6239715B1 (en) 1999-07-21 2001-05-29 Karen L. Belton Beeper system
JP3701148B2 (ja) 1999-07-28 2005-09-28 株式会社日立製作所 コンテンツの配信方法
US6867859B1 (en) 1999-08-03 2005-03-15 Lightwind Corporation Inductively coupled plasma spectrometer for process diagnostics and control
EP1077274A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Lid cooling mechanism and method for optimized deposition of low-k dielectric using tri methylsilane-ozone based processes
US6602806B1 (en) 1999-08-17 2003-08-05 Applied Materials, Inc. Thermal CVD process for depositing a low dielectric constant carbon-doped silicon oxide film
DE69940114D1 (de) 1999-08-17 2009-01-29 Applied Materials Inc Oberflächenbehandlung von kohlenstoffdotierten SiO2-Filmen zur Erhöhung der Stabilität während der O2-Veraschung
EP1077479A1 (en) 1999-08-17 2001-02-21 Applied Materials, Inc. Post-deposition treatment to enchance properties of Si-O-C low K film
KR100557594B1 (ko) 1999-08-17 2006-03-10 주식회사 하이닉스반도체 노광후 지연 안정성을 갖는 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 함유한 포토레지스트 조성물
US6432206B1 (en) 1999-08-30 2002-08-13 Si Diamond Technology, Inc. Heating element for use in a hot filament chemical vapor deposition chamber
US6579833B1 (en) 1999-09-01 2003-06-17 The Board Of Trustees Of The University Of Illinois Process for converting a metal carbide to carbon by etching in halogens
JP2001077088A (ja) 1999-09-02 2001-03-23 Tokyo Electron Ltd プラズマ処理装置
US6429146B2 (en) 1999-09-02 2002-08-06 Micron Technology, Inc. Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing
KR100427916B1 (ko) 1999-09-03 2004-04-28 미쯔이 죠센 가부시키가이샤 웨이퍼 보유 지지구
US6238636B1 (en) 1999-09-03 2001-05-29 Air Liquide America Corporation Process and systems for purification of boron trichloride
US6511539B1 (en) 1999-09-08 2003-01-28 Asm America, Inc. Apparatus and method for growth of a thin film
US7894474B1 (en) 1999-09-10 2011-02-22 Koninklijke Philips Electronics N.V. Remote control of an electronic device through downloading of a control interface of the electronic device in a mobile station
US6355153B1 (en) 1999-09-17 2002-03-12 Nutool, Inc. Chip interconnect and packaging deposition methods and structures
US6451157B1 (en) 1999-09-23 2002-09-17 Lam Research Corporation Gas distribution apparatus for semiconductor processing
US6293700B1 (en) 1999-09-24 2001-09-25 Fluke Corporation Calibrated isothermal assembly for a thermocouple thermometer
US6420792B1 (en) 1999-09-24 2002-07-16 Texas Instruments Incorporated Semiconductor wafer edge marking
US6740853B1 (en) 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
US7066703B2 (en) 1999-09-29 2006-06-27 Tokyo Electron Limited Chuck transport method and system
US6333275B1 (en) 1999-10-01 2001-12-25 Novellus Systems, Inc. Etchant mixing system for edge bevel removal of copper from silicon wafers
US6296710B1 (en) 1999-10-06 2001-10-02 Advanced Micro Devices, Inc. Multi-port gas injector for a vertical furnace used in semiconductor processing
US7010580B1 (en) 1999-10-08 2006-03-07 Agile Software Corp. Method and apparatus for exchanging data in a platform independent manner
US6503758B1 (en) 1999-10-12 2003-01-07 President & Fellows Of Harvard College Systems and methods for measuring nitrate levels
CN1192222C (zh) 1999-10-13 2005-03-09 德士古发展公司 蓝宝石增强热电偶保护管
US6391385B1 (en) 1999-10-18 2002-05-21 Advanced Technology Materials, Inc. Method of abating of effluents from chemical vapor deposition processes using organometallic source reagents
US6500487B1 (en) 1999-10-18 2002-12-31 Advanced Technology Materials, Inc Abatement of effluent from chemical vapor deposition processes using ligand exchange resistant metal-organic precursor solutions
US6203613B1 (en) 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
JP4387573B2 (ja) 1999-10-26 2009-12-16 東京エレクトロン株式会社 プロセス排気ガスモニタ装置及び方法、半導体製造装置、及び半導体製造装置管理システム及び方法
US6287913B1 (en) 1999-10-26 2001-09-11 International Business Machines Corporation Double polysilicon process for providing single chip high performance logic and compact embedded memory structure
KR100340716B1 (ko) 1999-10-29 2002-06-20 윤종용 실리콘 질화막 형성방법
KR20010045418A (ko) 1999-11-05 2001-06-05 박종섭 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
JP3551867B2 (ja) 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
KR100547248B1 (ko) 1999-11-12 2006-02-01 주식회사 하이닉스반도체 알루미나를 사용한 반도체 소자의 게이트 절연막 형성방법
US6320320B1 (en) 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
JP4209057B2 (ja) 1999-12-01 2009-01-14 東京エレクトロン株式会社 セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法
US6582891B1 (en) 1999-12-02 2003-06-24 Axcelis Technologies, Inc. Process for reducing edge roughness in patterned photoresist
KR100369324B1 (ko) 1999-12-02 2003-01-24 한국전자통신연구원 평면형 마이크로 공동구조 제조 방법
EP1107512A1 (en) 1999-12-03 2001-06-13 Sony International (Europe) GmbH Communication device and software for operating multimedia applications
US6780704B1 (en) 1999-12-03 2004-08-24 Asm International Nv Conformal thin films over textured capacitor electrodes
FI118804B (fi) 1999-12-03 2008-03-31 Asm Int Menetelmä oksidikalvojen kasvattamiseksi
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
KR20010062209A (ko) 1999-12-10 2001-07-07 히가시 데쓰로 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치
US7838842B2 (en) 1999-12-13 2010-11-23 Semequip, Inc. Dual mode ion source for ion implantation
JP3659101B2 (ja) 1999-12-13 2005-06-15 富士ゼロックス株式会社 窒化物半導体素子及びその製造方法
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
AU2430601A (en) 1999-12-13 2001-06-18 Semequip, Inc. Ion implantation ion source, system and method
KR100465982B1 (ko) 1999-12-15 2005-01-13 지니텍 주식회사 촉매와 화학적 기상 증착 방법을 이용하여 구리 배선과박막을 형성하는 방법
US6225745B1 (en) 1999-12-17 2001-05-01 Axcelis Technologies, Inc. Dual plasma source for plasma process chamber
JP3810604B2 (ja) 1999-12-21 2006-08-16 Ｓｍｃ株式会社 ゲートバルブ
JP2001176952A (ja) 1999-12-21 2001-06-29 Toshiba Mach Co Ltd ウェーハ位置ずれ検出装置
US6673198B1 (en) 1999-12-22 2004-01-06 Lam Research Corporation Semiconductor processing equipment having improved process drift control
US6503330B1 (en) 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
JP3582437B2 (ja) 1999-12-24 2004-10-27 株式会社村田製作所 薄膜製造方法及びそれに用いる薄膜製造装置
JP4089113B2 (ja) 1999-12-28 2008-05-28 株式会社Ｉｈｉ 薄膜作成装置
US7055094B2 (en) 1999-12-30 2006-05-30 Rutgers, The State University Of New Jersey Virtual tags and the process of virtual tagging utilizing user feedback in transformation rules
US6335049B1 (en) 2000-01-03 2002-01-01 Micron Technology, Inc. Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor
US6576062B2 (en) 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
WO2001052302A1 (en) 2000-01-10 2001-07-19 Tokyo Electron Limited Segmented electrode assembly and method for plasma processing
KR100767762B1 (ko) 2000-01-18 2007-10-17 에이에스엠 저펜 가부시기가이샤 자가 세정을 위한 원격 플라즈마 소스를 구비한 cvd 반도체 공정장치
US6541367B1 (en) 2000-01-18 2003-04-01 Applied Materials, Inc. Very low dielectric constant plasma-enhanced CVD films
TW473792B (en) 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
JP3654142B2 (ja) 2000-01-20 2005-06-02 住友電気工業株式会社 半導体製造装置用ガスシャワー体
JP2001203211A (ja) 2000-01-20 2001-07-27 Hitachi Kokusai Electric Inc 水素アニール処理方法及びその装置
JP2001207265A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
JP4384770B2 (ja) 2000-01-27 2009-12-16 株式会社日立国際電気 基板処理装置
JP2001207268A (ja) 2000-01-27 2001-07-31 Kubota Corp 成膜装置
US6475930B1 (en) 2000-01-31 2002-11-05 Motorola, Inc. UV cure process and tool for low k film formation
US6432255B1 (en) 2000-01-31 2002-08-13 Applied Materials, Inc. Method and apparatus for enhancing chamber cleaning
US6191399B1 (en) 2000-02-01 2001-02-20 Asm America, Inc. System of controlling the temperature of a processing chamber
US6436819B1 (en) 2000-02-01 2002-08-20 Applied Materials, Inc. Nitrogen treatment of a metal nitride/metal stack
JP4174941B2 (ja) 2000-02-03 2008-11-05 株式会社デンソー 薄膜製造方法及び薄膜製造装置
TW488010B (en) 2000-02-04 2002-05-21 Kobe Steel Ltd Chamber member made of aluminum alloy and heater block
JP4778655B2 (ja) 2000-02-04 2011-09-21 アイクストロン、アーゲー １つまたは多くの被膜を基板に沈積する方法および装置
US6372583B1 (en) 2000-02-09 2002-04-16 Intel Corporation Process for making semiconductor device with epitaxially grown source and drain
DE10005820C1 (de) 2000-02-10 2001-08-02 Schott Glas Gasversorungsvorrichtung für Precursoren geringen Dampfdrucks
US20020009119A1 (en) 2000-02-11 2002-01-24 Matthew William T. Environmental heat stress monitor
US6407435B1 (en) 2000-02-11 2002-06-18 Sharp Laboratories Of America, Inc. Multilayer dielectric stack and method
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
KR100520188B1 (ko) 2000-02-18 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
US6517634B2 (en) 2000-02-28 2003-02-11 Applied Materials, Inc. Chemical vapor deposition chamber lid assembly
TW476996B (en) 2000-02-28 2002-02-21 Mitsubishi Material Silicon Semiconductor manufacturing method and semiconductor manufacturing apparatus
US6846711B2 (en) 2000-03-02 2005-01-25 Tokyo Electron Limited Method of making a metal oxide capacitor, including a barrier film
US6644324B1 (en) 2000-03-06 2003-11-11 Cymer, Inc. Laser discharge chamber passivation by plasma
JP5016767B2 (ja) 2000-03-07 2012-09-05 エーエスエム インターナショナル エヌ．ヴェー． 傾斜薄膜の形成方法
US7419903B2 (en) 2000-03-07 2008-09-02 Asm International N.V. Thin films
JP4054159B2 (ja) 2000-03-08 2008-02-27 東京エレクトロン株式会社 基板処理方法及びその装置
US6455098B2 (en) 2000-03-09 2002-09-24 Semix Incorporated Wafer processing apparatus and method
US6475902B1 (en) 2000-03-10 2002-11-05 Applied Materials, Inc. Chemical vapor deposition of niobium barriers for copper metallization
DE60113073T2 (de) 2000-03-10 2006-08-31 Smiths Detection Inc., Pasadena Steuerung für einen industriellen prozes mit einer oder mehreren multidimensionalen variablen
JP3438696B2 (ja) 2000-03-13 2003-08-18 松下電器産業株式会社 プラズマ処理方法及び装置
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US6506009B1 (en) 2000-03-16 2003-01-14 Applied Materials, Inc. Apparatus for storing and moving a cassette
US6558755B2 (en) 2000-03-20 2003-05-06 Dow Corning Corporation Plasma curing process for porous silica thin film
US6576300B1 (en) 2000-03-20 2003-06-10 Dow Corning Corporation High modulus, low dielectric constant coatings
US6759098B2 (en) 2000-03-20 2004-07-06 Axcelis Technologies, Inc. Plasma curing of MSQ-based porous low-k film materials
US6913796B2 (en) 2000-03-20 2005-07-05 Axcelis Technologies, Inc. Plasma curing process for porous low-k materials
US6598559B1 (en) 2000-03-24 2003-07-29 Applied Materials, Inc. Temperature controlled chamber
AT412302B (de) 2000-03-28 2004-12-27 Hoerbiger Ventilwerke Gmbh Selbsttätiges ventil
JP3676983B2 (ja) 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
WO2001075188A2 (en) 2000-03-30 2001-10-11 Tokyo Electron Limited Method of and apparatus for gas injection
JP2001342570A (ja) 2000-03-30 2001-12-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および半導体製造装置
US6390905B1 (en) 2000-03-31 2002-05-21 Speedfam-Ipec Corporation Workpiece carrier with adjustable pressure zones and barriers
JP2001345263A (ja) 2000-03-31 2001-12-14 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP4281208B2 (ja) 2000-04-04 2009-06-17 ソニー株式会社 ロボット遠隔制御システム
WO2001078115A2 (en) 2000-04-06 2001-10-18 Asm America, Inc. Barrier coating for vitreous materials
KR100360252B1 (ko) 2000-04-06 2002-11-13 엘지전자 주식회사 진공청소기의 유로 시스템
US7011710B2 (en) 2000-04-10 2006-03-14 Applied Materials Inc. Concentration profile on demand gas delivery system (individual divert delivery system)
TW576873B (en) 2000-04-14 2004-02-21 Asm Int Method of growing a thin film onto a substrate
FI117979B (fi) 2000-04-14 2007-05-15 Asm Int Menetelmä oksidiohutkalvojen valmistamiseksi
TW496907B (en) 2000-04-14 2002-08-01 Asm Microchemistry Oy Method and apparatus of growing a thin film onto a substrate
US6451713B1 (en) 2000-04-17 2002-09-17 Mattson Technology, Inc. UV pretreatment process for ultra-thin oxynitride formation
US6641350B2 (en) 2000-04-17 2003-11-04 Hitachi Kokusai Electric Inc. Dual loading port semiconductor processing equipment
TW503449B (en) 2000-04-18 2002-09-21 Ngk Insulators Ltd Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members
US6984591B1 (en) 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6329297B1 (en) 2000-04-21 2001-12-11 Applied Materials, Inc. Dilute remote plasma clean
US6635117B1 (en) 2000-04-26 2003-10-21 Axcelis Technologies, Inc. Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system
US6502530B1 (en) 2000-04-26 2003-01-07 Unaxis Balzers Aktiengesellschaft Design of gas injection for the electrode in a capacitively coupled RF plasma reactor
US6387207B1 (en) 2000-04-28 2002-05-14 Applied Materials, Inc. Integration of remote plasma generator with semiconductor processing chamber
US7141768B2 (en) 2000-04-28 2006-11-28 Nexicor, Llc Fastening device
JP2001313329A (ja) 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
US6952656B1 (en) 2000-04-28 2005-10-04 Applied Materials, Inc. Wafer fabrication data acquisition and management systems
KR100367662B1 (ko) 2000-05-02 2003-01-10 주식회사 셈테크놀러지 하이퍼서멀 중성입자 발생 장치 및 이를 채용하는 중성입자 처리 장치
DE10021871A1 (de) 2000-05-05 2001-11-15 Infineon Technologies Ag Verfahren zum Herstellen einer Barriereschicht in einem elektronischen Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements mit einer Barriereschicht
JP2001319921A (ja) 2000-05-09 2001-11-16 Canon Inc プロセスチャンバ
US6553932B2 (en) 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020195056A1 (en) 2000-05-12 2002-12-26 Gurtej Sandhu Versatile atomic layer deposition apparatus
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
JP4422295B2 (ja) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 Ｃｖｄ装置
US20020078893A1 (en) 2000-05-18 2002-06-27 Applied Materials , Inc. Plasma enhanced chemical processing reactor and method
JP4449226B2 (ja) 2000-05-22 2010-04-14 東京エレクトロン株式会社 金属酸化膜の改質方法、金属酸化膜の成膜方法及び熱処理装置
US6387823B1 (en) 2000-05-23 2002-05-14 Advanced Micro Devices, Inc. Method and apparatus for controlling deposition process using residual gas analysis
JP3448737B2 (ja) 2000-05-25 2003-09-22 住友重機械工業株式会社 ウエハーチャック用冷却板及びウエハーチャック
US6559026B1 (en) 2000-05-25 2003-05-06 Applied Materials, Inc Trench fill with HDP-CVD process including coupled high power density plasma deposition
US6558517B2 (en) 2000-05-26 2003-05-06 Micron Technology, Inc. Physical vapor deposition methods
US6884295B2 (en) 2000-05-29 2005-04-26 Tokyo Electron Limited Method of forming oxynitride film or the like and system for carrying out the same
US6645585B2 (en) 2000-05-30 2003-11-11 Kyocera Corporation Container for treating with corrosive-gas and plasma and method for manufacturing the same
KR100783841B1 (ko) 2000-05-31 2007-12-10 동경 엘렉트론 주식회사 열처리 시스템
US6998097B1 (en) 2000-06-07 2006-02-14 Tegal Corporation High pressure chemical vapor trapping system
JP3687651B2 (ja) 2000-06-08 2005-08-24 ジニテック インク． 薄膜形成方法
USD455024S1 (en) 2000-06-09 2002-04-02 Levenger Company Portable writing surface
KR100406173B1 (ko) 2000-06-13 2003-11-19 주식회사 하이닉스반도체 촉매 분사 수단을 구비한 히터 블록
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
WO2001097260A2 (en) 2000-06-15 2001-12-20 Koninklijke Philips Electronics N.V. Holder for a substrate cassette and device provided with such a holder
US6461435B1 (en) 2000-06-22 2002-10-08 Applied Materials, Inc. Showerhead with reduced contact area
US6346419B1 (en) 2000-06-26 2002-02-12 The United States Of America As Represented By The Department Of Commerce Photolysis system for fast-response NO2 measurements and method therefor
US6620723B1 (en) 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
KR100351056B1 (ko) 2000-06-27 2002-09-05 삼성전자 주식회사 선택적 금속산화막 형성단계를 포함하는 반도체 소자의 제조방법
JP4371543B2 (ja) 2000-06-29 2009-11-25 日本電気株式会社 リモートプラズマｃｖｄ装置及び膜形成方法
US6632322B1 (en) 2000-06-30 2003-10-14 Lam Research Corporation Switched uniformity control
KR100467366B1 (ko) 2000-06-30 2005-01-24 주식회사 하이닉스반도체 원자층 증착법을 이용한 지르코늄산화막 형성방법
KR100546138B1 (ko) 2000-06-30 2006-01-24 주식회사 하이닉스반도체 신규한 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
US6874480B1 (en) 2000-07-03 2005-04-05 Combustion Dynamics Corp. Flow meter
JP3589954B2 (ja) 2000-07-04 2004-11-17 シャープ株式会社 電磁波検出器、画像検出器、および電磁波検出器の製造方法
JP3497450B2 (ja) 2000-07-06 2004-02-16 東京エレクトロン株式会社 バッチ式熱処理装置及びその制御方法
JP4825396B2 (ja) 2000-07-06 2011-11-30 ブルックス オートメーション インコーポレイテッド レティクル記憶検索システム
US6835278B2 (en) 2000-07-07 2004-12-28 Mattson Technology Inc. Systems and methods for remote plasma clean
JP3485896B2 (ja) 2000-07-11 2004-01-13 東京エレクトロン株式会社 プラズマ処理装置
JP2002164342A (ja) 2000-07-21 2002-06-07 Canon Sales Co Inc 半導体装置及びその製造方法
US6821910B2 (en) 2000-07-24 2004-11-23 University Of Maryland, College Park Spatially programmable microelectronics process equipment using segmented gas injection showerhead with exhaust gas recirculation
JP4357715B2 (ja) 2000-07-24 2009-11-04 東京エレクトロン株式会社 熱処理装置の温度校正方法
US6685991B2 (en) 2000-07-31 2004-02-03 Shin-Etsu Chemical Co., Ltd. Method for formation of thermal-spray coating layer of rare earth fluoride
FR2812568B1 (fr) 2000-08-01 2003-08-08 Sidel Sa Revetement barriere depose par plasma comprenant une couche d'interface, procede d'obtention d'un tel revetement et recipient revetu d'un tel revetement
US6450117B1 (en) 2000-08-07 2002-09-17 Applied Materials, Inc. Directing a flow of gas in a substrate processing chamber
US6712929B1 (en) 2000-08-08 2004-03-30 Lam Research Corporation Deformation reduction at the main chamber
US7223676B2 (en) 2002-06-05 2007-05-29 Applied Materials, Inc. Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer
US7166524B2 (en) 2000-08-11 2007-01-23 Applied Materials, Inc. Method for ion implanting insulator material to reduce dielectric constant
US7465478B2 (en) 2000-08-11 2008-12-16 Applied Materials, Inc. Plasma immersion ion implantation process
KR100373853B1 (ko) 2000-08-11 2003-02-26 삼성전자주식회사 반도체소자의 선택적 에피택시얼 성장 방법
US20020136214A1 (en) 2000-08-14 2002-09-26 Consumer Direct Link Pervasive computing network architecture
US6437290B1 (en) 2000-08-17 2002-08-20 Tokyo Electron Limited Heat treatment apparatus having a thin light-transmitting window
AU2001278749A1 (en) 2000-08-18 2002-03-04 Tokyo Electron Limited Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof
US6451692B1 (en) 2000-08-18 2002-09-17 Micron Technology, Inc. Preheating of chemical vapor deposition precursors
US6630053B2 (en) 2000-08-22 2003-10-07 Asm Japan K.K. Semiconductor processing module and apparatus
JP4150493B2 (ja) 2000-08-22 2008-09-17 株式会社東芝 パターン描画装置における温度測定方法
JP4365017B2 (ja) 2000-08-23 2009-11-18 東京エレクトロン株式会社 熱処理装置の降温レート制御方法および熱処理装置
US6566278B1 (en) 2000-08-24 2003-05-20 Applied Materials Inc. Method for densification of CVD carbon-doped silicon oxide films through UV irradiation
US6878906B2 (en) 2000-08-30 2005-04-12 Ibiden Co., Ltd. Ceramic heater for semiconductor manufacturing and inspecting equipment
US6494998B1 (en) 2000-08-30 2002-12-17 Tokyo Electron Limited Process apparatus and method for improving plasma distribution and performance in an inductively coupled plasma using an internal inductive element
US6784108B1 (en) 2000-08-31 2004-08-31 Micron Technology, Inc. Gas pulsing for etch profile control
KR20020019414A (ko) 2000-09-05 2002-03-12 엔도 마코토 기판 처리 장치 및 기판 처리 장치를 이용한 반도체디바이스 제조 방법
USD449873S1 (en) 2000-09-22 2001-10-30 James Bronson Garbage disposal strainer and splash guard
JP4232330B2 (ja) 2000-09-22 2009-03-04 東京エレクトロン株式会社 励起ガス形成装置、処理装置及び処理方法
EP2372753B1 (en) 2000-09-25 2013-01-16 Tokyo Electron Limited Gas Compositions for Cleaning the Interiors of Reactors as Well as for Etching Films of Silicon-Containing Compounds
JP3929261B2 (ja) 2000-09-25 2007-06-13 株式会社日立国際電気 基板処理装置および基板処理方法
US6494065B2 (en) 2000-09-26 2002-12-17 Babbitt Steam Specialty Company Valve lockout/tag out system
US6632068B2 (en) 2000-09-27 2003-10-14 Asm International N.V. Wafer handling system
US6492625B1 (en) 2000-09-27 2002-12-10 Emcore Corporation Apparatus and method for controlling temperature uniformity of substrates
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
AU146328S (en) 2000-09-29 2001-12-18 American Standard Int Inc Faucet
US6370796B1 (en) 2000-09-29 2002-04-16 Sony Corporation Heater block cooling system for wafer processing apparatus
US6578893B2 (en) 2000-10-02 2003-06-17 Ajs Automation, Inc. Apparatus and methods for handling semiconductor wafers
KR100492906B1 (ko) 2000-10-04 2005-06-02 주식회사 하이닉스반도체 반도체소자의 층간절연막 형성 방법
JP2002110570A (ja) 2000-10-04 2002-04-12 Asm Japan Kk 半導体製造装置用ガスラインシステム
US6745095B1 (en) 2000-10-04 2004-06-01 Applied Materials, Inc. Detection of process endpoint through monitoring fluctuation of output data
JP3572247B2 (ja) 2000-10-06 2004-09-29 東芝セラミックス株式会社 半導体熱処理炉用ガス導入管
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
US7204887B2 (en) 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
TW541425B (en) 2000-10-20 2003-07-11 Ebara Corp Frequency measuring device, polishing device using the same and eddy current sensor
US6395650B1 (en) 2000-10-23 2002-05-28 International Business Machines Corporation Methods for forming metal oxide layers with enhanced purity
FI118014B (fi) 2000-10-23 2007-05-31 Asm Int Menetelmä alumiinioksidiohutkalvojen valmistamiseksi matalissa lämpötiloissa
JP4156788B2 (ja) 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
US6688784B1 (en) 2000-10-25 2004-02-10 Advanced Micro Devices, Inc. Parallel plate development with multiple holes in top plate for control of developer flow and pressure
US6824665B2 (en) 2000-10-25 2004-11-30 Shipley Company, L.L.C. Seed layer deposition
JP3910821B2 (ja) 2000-10-26 2007-04-25 東京エレクトロン株式会社 基板の処理装置
JP3408527B2 (ja) 2000-10-26 2003-05-19 松下電器産業株式会社 半導体装置の製造方法
US6445574B1 (en) 2000-10-30 2002-09-03 Motorola, Inc. Electronic device
US6498091B1 (en) 2000-11-01 2002-12-24 Applied Materials, Inc. Method of using a barrier sputter reactor to remove an underlying barrier layer
US7032614B2 (en) 2000-11-03 2006-04-25 Applied Materials, Inc. Facilities connection box for pre-facilitation of wafer fabrication equipment
US6649540B2 (en) 2000-11-09 2003-11-18 The Boc Group, Inc. Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
JP4669605B2 (ja) 2000-11-20 2011-04-13 東京エレクトロン株式会社 半導体製造装置のクリーニング方法
JP2002158178A (ja) 2000-11-21 2002-05-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6689220B1 (en) 2000-11-22 2004-02-10 Simplus Systems Corporation Plasma enhanced pulsed layer deposition
US6613695B2 (en) 2000-11-24 2003-09-02 Asm America, Inc. Surface preparation prior to deposition
US20020064592A1 (en) 2000-11-29 2002-05-30 Madhav Datta Electroless method of seed layer depostion, repair, and fabrication of Cu interconnects
KR100688484B1 (ko) 2000-11-30 2007-02-28 삼성전자주식회사 활성화 산소를 이용하여 기판을 처리하는 장치 및 그 방법
JP3610900B2 (ja) 2000-11-30 2005-01-19 東京エレクトロン株式会社 熱処理装置
US20020069222A1 (en) 2000-12-01 2002-06-06 Wiznet, Inc. System and method for placing active tags in HTML document
JP3939101B2 (ja) 2000-12-04 2007-07-04 株式会社荏原製作所 基板搬送方法および基板搬送容器
JP3650025B2 (ja) 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
US6913152B2 (en) 2000-12-04 2005-07-05 Peter Zuk, Jr. Disposable vacuum filtration apparatus capable of detecting microorganisms and particulates in liquid samples
US7208428B2 (en) 2000-12-05 2007-04-24 Tokyo Electron Limited Method and apparatus for treating article to be treated
JP2002237375A (ja) 2000-12-05 2002-08-23 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板およびその製造方法
US6428859B1 (en) 2000-12-06 2002-08-06 Angstron Systems, Inc. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US20020104481A1 (en) 2000-12-06 2002-08-08 Chiang Tony P. System and method for modulated ion-induced atomic layer deposition (MII-ALD)
US6878402B2 (en) 2000-12-06 2005-04-12 Novellus Systems, Inc. Method and apparatus for improved temperature control in atomic layer deposition
KR100385947B1 (ko) 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
US20020197402A1 (en) 2000-12-06 2002-12-26 Chiang Tony P. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US7871676B2 (en) 2000-12-06 2011-01-18 Novellus Systems, Inc. System for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
US6949450B2 (en) 2000-12-06 2005-09-27 Novellus Systems, Inc. Method for integrated in-situ cleaning and subsequent atomic layer deposition within a single processing chamber
US6413321B1 (en) 2000-12-07 2002-07-02 Applied Materials, Inc. Method and apparatus for reducing particle contamination on wafer backside during CVD process
US6930041B2 (en) 2000-12-07 2005-08-16 Micron Technology, Inc. Photo-assisted method for semiconductor fabrication
US6576564B2 (en) 2000-12-07 2003-06-10 Micron Technology, Inc. Photo-assisted remote plasma apparatus and method
TWI313059B (ko) 2000-12-08 2009-08-01 Sony Corporatio
AU2002221122A1 (en) 2000-12-12 2002-06-24 Tokyo Electron Limited Thin film forming method and thin film forming device
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
US6814096B2 (en) 2000-12-15 2004-11-09 Nor-Cal Products, Inc. Pressure controller and method
US20020076507A1 (en) 2000-12-15 2002-06-20 Chiang Tony P. Process sequence for atomic layer deposition
US6800173B2 (en) 2000-12-15 2004-10-05 Novellus Systems, Inc. Variable gas conductance control for a process chamber
US6641673B2 (en) 2000-12-20 2003-11-04 General Electric Company Fluid injector for and method of prolonged delivery and distribution of reagents into plasma
US7015422B2 (en) 2000-12-21 2006-03-21 Mattson Technology, Inc. System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
US6544906B2 (en) 2000-12-21 2003-04-08 Texas Instruments Incorporated Annealing of high-k dielectric materials
US6634882B2 (en) 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
US20020152244A1 (en) 2000-12-22 2002-10-17 International Business Machines Corporation Method and apparatus to dynamically create a customized user interface based on a document type definition
US20020151327A1 (en) 2000-12-22 2002-10-17 David Levitt Program selector and guide system and method
JP5068402B2 (ja) 2000-12-28 2012-11-07 公益財団法人国際科学振興財団 誘電体膜およびその形成方法、半導体装置、不揮発性半導体メモリ装置、および半導体装置の製造方法
US6398184B1 (en) 2000-12-29 2002-06-04 General Signal Corporation Lock device and lock method for knife gate valves
US6533910B2 (en) 2000-12-29 2003-03-18 Lam Research Corporation Carbonitride coated component of semiconductor processing equipment and method of manufacturing thereof
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
US7172497B2 (en) 2001-01-05 2007-02-06 Asm Nutool, Inc. Fabrication of semiconductor interconnect structures
US6572923B2 (en) 2001-01-12 2003-06-03 The Boc Group, Inc. Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric film
JP4633269B2 (ja) 2001-01-15 2011-02-16 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
JP3625197B2 (ja) 2001-01-18 2005-03-02 東京エレクトロン株式会社 プラズマ装置およびプラズマ生成方法
US7087482B2 (en) 2001-01-19 2006-08-08 Samsung Electronics Co., Ltd. Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same
JP3916565B2 (ja) 2001-01-22 2007-05-16 東京エレクトロン株式会社 電子デバイス材料の製造方法
JP4644943B2 (ja) 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
CN100585814C (zh) 2001-01-25 2010-01-27 东京毅力科创株式会社 等离子体处理方法
JP4429300B2 (ja) 2001-01-25 2010-03-10 東京エレクトロン株式会社 電子デバイス材料の製造方法
US6660662B2 (en) 2001-01-26 2003-12-09 Applied Materials, Inc. Method of reducing plasma charge damage for plasma processes
KR20020064028A (ko) 2001-01-31 2002-08-07 한빛 세마텍(주) 펄스형 자외선조사에 의한 세정 및 표면처리 장치
US7371633B2 (en) 2001-02-02 2008-05-13 Samsung Electronics Co., Ltd. Dielectric layer for semiconductor device and method of manufacturing the same
US6844273B2 (en) 2001-02-07 2005-01-18 Tokyo Electron Limited Precleaning method of precleaning a silicon nitride film forming system
WO2002063535A2 (en) 2001-02-07 2002-08-15 Exalt Solutions, Inc. Intelligent multimedia e-catalog
JP2005033221A (ja) 2001-02-08 2005-02-03 Tokyo Electron Ltd 基板載置台および処理装置
US6589868B2 (en) 2001-02-08 2003-07-08 Applied Materials, Inc. Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput
JP3626933B2 (ja) 2001-02-08 2005-03-09 東京エレクトロン株式会社 基板載置台の製造方法
AU2002306436A1 (en) 2001-02-12 2002-10-15 Asm America, Inc. Improved process for deposition of semiconductor films
US20020108670A1 (en) 2001-02-12 2002-08-15 Baker John Eric High purity chemical container with external level sensor and removable dip tube
US7072061B2 (en) 2001-02-13 2006-07-04 Ariba, Inc. Method and system for extracting information from RFQ documents and compressing RFQ files into a common RFQ file type
US6613656B2 (en) 2001-02-13 2003-09-02 Micron Technology, Inc. Sequential pulse deposition
CN1322556C (zh) 2001-02-15 2007-06-20 东京毅力科创株式会社 被处理件的处理方法及处理装置
US6632478B2 (en) 2001-02-22 2003-10-14 Applied Materials, Inc. Process for forming a low dielectric constant carbon-containing film
KR100410991B1 (ko) 2001-02-22 2003-12-18 삼성전자주식회사 반도체 제조장치의 로드포트
JP3494435B2 (ja) 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
TW544775B (en) 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6852167B2 (en) 2001-03-01 2005-02-08 Micron Technology, Inc. Methods, systems, and apparatus for uniform chemical-vapor depositions
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
JP4487135B2 (ja) 2001-03-05 2010-06-23 東京エレクトロン株式会社 流体制御装置
US20020123237A1 (en) 2001-03-05 2002-09-05 Tue Nguyen Plasma pulse semiconductor processing system and method
US7563715B2 (en) 2005-12-05 2009-07-21 Asm International N.V. Method of producing thin films
US7491634B2 (en) 2006-04-28 2009-02-17 Asm International N.V. Methods for forming roughened surfaces and applications thereof
US7111232B1 (en) 2001-03-07 2006-09-19 Thomas Layne Bascom Method and system for making document objects available to users of a network
US6939579B2 (en) 2001-03-07 2005-09-06 Asm International N.V. ALD reactor and method with controlled wall temperature
US6447651B1 (en) 2001-03-07 2002-09-10 Applied Materials, Inc. High-permeability magnetic shield for improved process uniformity in nonmagnetized plasma process chambers
US6939206B2 (en) 2001-03-12 2005-09-06 Asm Nutool, Inc. Method and apparatus of sealing wafer backside for full-face electrochemical plating
US6855037B2 (en) 2001-03-12 2005-02-15 Asm-Nutool, Inc. Method of sealing wafer backside for full-face electrochemical plating
US7186648B1 (en) 2001-03-13 2007-03-06 Novellus Systems, Inc. Barrier first method for single damascene trench applications
US20020129768A1 (en) 2001-03-15 2002-09-19 Carpenter Craig M. Chemical vapor deposition apparatuses and deposition methods
US7348042B2 (en) 2001-03-19 2008-03-25 Novellus Systems, Inc. Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
JP3912993B2 (ja) 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4073174B2 (ja) 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4727057B2 (ja) 2001-03-28 2011-07-20 忠弘 大見 プラズマ処理装置
US6716571B2 (en) 2001-03-28 2004-04-06 Advanced Micro Devices, Inc. Selective photoresist hardening to facilitate lateral trimming
US6723654B2 (en) 2001-03-30 2004-04-20 Taiwan Semiconductor Manufacturing Co., Ltd Method and apparatus for in-situ descum/hot bake/dry etch photoresist/polyimide layer
US6583572B2 (en) 2001-03-30 2003-06-24 Lam Research Corporation Inductive plasma processor including current sensor for plasma excitation coil
TW540093B (en) 2001-04-05 2003-07-01 Angstron Systems Inc Atomic layer deposition system and method
US6902622B2 (en) 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6448192B1 (en) 2001-04-16 2002-09-10 Motorola, Inc. Method for forming a high dielectric constant material
US6521295B1 (en) 2001-04-17 2003-02-18 Pilkington North America, Inc. Chemical vapor deposition of antimony-doped metal oxide and the coated article made thereby
JP2002317287A (ja) 2001-04-18 2002-10-31 Permelec Electrode Ltd 過酸化水素製造用電解槽及び過酸化水素製造方法
US7125783B2 (en) 2001-04-18 2006-10-24 Integrated Device Technology, Inc. Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean
US6482331B2 (en) 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
TW538327B (en) 2001-04-24 2003-06-21 Unit Instr Inc System and method for a mass flow controller
US6753507B2 (en) 2001-04-27 2004-06-22 Kyocera Corporation Wafer heating apparatus
US20030019428A1 (en) 2001-04-28 2003-01-30 Applied Materials, Inc. Chemical vapor deposition chamber
US6847014B1 (en) 2001-04-30 2005-01-25 Lam Research Corporation Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support
US6528430B2 (en) 2001-05-01 2003-03-04 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing Si2C16 and NH3
US6864041B2 (en) 2001-05-02 2005-03-08 International Business Machines Corporation Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching
US6627268B1 (en) 2001-05-03 2003-09-30 Novellus Systems, Inc. Sequential ion, UV, and electron induced chemical vapor deposition
US6602800B2 (en) 2001-05-09 2003-08-05 Asm Japan K.K. Apparatus for forming thin film on semiconductor substrate by plasma reaction
KR20020086763A (ko) 2001-05-10 2002-11-20 주식회사 엘지이아이 플라즈마를 이용한 연속중합장치용 열전대
US6596653B2 (en) 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
JP2003053688A (ja) 2001-05-15 2003-02-26 Fanuc Robotics North America Inc 教示ペンダントを有するロボット・システム
DE10156441A1 (de) 2001-05-18 2002-11-21 Mattson Thermal Products Gmbh Vorrichtung zur Aufnahme von scheibenförmigen Objekten und Vorrichtung zur Handhabung von Objekten
JP2002343790A (ja) 2001-05-21 2002-11-29 Nec Corp 金属化合物薄膜の気相堆積方法及び半導体装置の製造方法
US6528767B2 (en) 2001-05-22 2003-03-04 Applied Materials, Inc. Pre-heating and load lock pedestal material for high temperature CVD liquid crystal and flat panel display applications
US7262125B2 (en) 2001-05-22 2007-08-28 Novellus Systems, Inc. Method of forming low-resistivity tungsten interconnects
US7037574B2 (en) 2001-05-23 2006-05-02 Veeco Instruments, Inc. Atomic layer deposition for fabricating thin films
US6810886B2 (en) 2001-05-24 2004-11-02 Applied Materials, Inc. Chamber cleaning via rapid thermal process during a cleaning period
US20020181612A1 (en) 2001-05-29 2002-12-05 Motorola, Inc. Monolithic, software-definable circuit including a power amplifier and method for use therewith
US7159597B2 (en) 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
US6758909B2 (en) 2001-06-05 2004-07-06 Honeywell International Inc. Gas port sealing for CVD/CVI furnace hearth plates
GB0113735D0 (en) 2001-06-05 2001-07-25 Holset Engineering Co Mixing fluid streams
JP3421329B2 (ja) 2001-06-08 2003-06-30 東京エレクトロン株式会社 薄膜形成装置の洗浄方法
US6955928B1 (en) 2001-06-18 2005-10-18 Advanced Micro Devices, Inc. Closed loop residual gas analyzer process control technique
US6472266B1 (en) 2001-06-18 2002-10-29 Taiwan Semiconductor Manufacturing Company Method to reduce bit line capacitance in cub drams
DE10129630A1 (de) 2001-06-20 2003-01-02 Philips Corp Intellectual Pty Niederdruckgasentladungslampe mit Leuchtstoffbeschichtung
US6391803B1 (en) 2001-06-20 2002-05-21 Samsung Electronics Co., Ltd. Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane
US6709989B2 (en) 2001-06-21 2004-03-23 Motorola, Inc. Method for fabricating a semiconductor structure including a metal oxide interface with silicon
US6514313B1 (en) 2001-06-22 2003-02-04 Aeronex, Inc. Gas purification system and method
US6658933B2 (en) 2001-06-22 2003-12-09 Clesse Industries Fill-level indicator for a liquefied-petroleum-gas tank
US20030002562A1 (en) 2001-06-27 2003-01-02 Yerlikaya Y. Denis Temperature probe adapter
US6420279B1 (en) 2001-06-28 2002-07-16 Sharp Laboratories Of America, Inc. Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate
KR20030001939A (ko) 2001-06-28 2003-01-08 동부전자 주식회사 반도체소자의 장벽층 형성 방법 및 장치
US20030003696A1 (en) 2001-06-29 2003-01-02 Avgerinos Gelatos Method and apparatus for tuning a plurality of processing chambers
US20030000647A1 (en) 2001-06-29 2003-01-02 Applied Materials, Inc. Substrate processing chamber
JP3708031B2 (ja) 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
TW539822B (en) 2001-07-03 2003-07-01 Asm Inc Source chemical container assembly
DE10133013C2 (de) 2001-07-06 2003-07-03 Karlsruhe Forschzent Verschluss für Hohlräume oder Durchführungen
US20030013314A1 (en) 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
US7179752B2 (en) 2001-07-10 2007-02-20 Tokyo Electron Limited Dry etching method
US6746308B1 (en) 2001-07-11 2004-06-08 Advanced Micro Devices, Inc. Dynamic lot allocation based upon wafer state characteristics, and system for accomplishing same
US6868856B2 (en) 2001-07-13 2005-03-22 Applied Materials, Inc. Enhanced remote plasma cleaning
US6838122B2 (en) 2001-07-13 2005-01-04 Micron Technology, Inc. Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers
US20030017266A1 (en) 2001-07-13 2003-01-23 Cem Basceri Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer
KR100400044B1 (ko) 2001-07-16 2003-09-29 삼성전자주식회사 간격 조절 장치를 가지는 웨이퍼 처리 장치의 샤워 헤드
US20030017268A1 (en) 2001-07-18 2003-01-23 Applied Materials, Inc. .method of cvd titanium nitride film deposition for increased titanium nitride film uniformity
JP3926588B2 (ja) 2001-07-19 2007-06-06 キヤノンマーケティングジャパン株式会社 半導体装置の製造方法
FR2827682B1 (fr) 2001-07-20 2004-04-02 Gemplus Card Int Regulation de pression par transfert d'un volume de gaz calibre
US6712949B2 (en) 2001-07-22 2004-03-30 The Electrosynthesis Company, Inc. Electrochemical synthesis of hydrogen peroxide
JP2003035574A (ja) 2001-07-23 2003-02-07 Mitsubishi Heavy Ind Ltd 応答型センサ及び応用計測システム
US6677254B2 (en) 2001-07-23 2004-01-13 Applied Materials, Inc. Processes for making a barrier between a dielectric and a conductor and products produced therefrom
US20080268635A1 (en) 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6638839B2 (en) 2001-07-26 2003-10-28 The University Of Toledo Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
US7085616B2 (en) 2001-07-27 2006-08-01 Applied Materials, Inc. Atomic layer deposition apparatus
US6435865B1 (en) 2001-07-30 2002-08-20 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for positioning gas injectors in a vertical furnace
WO2003012843A1 (fr) 2001-07-31 2003-02-13 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Procede et appareil de nettoyage et procede et appareil de gravure
JP4236882B2 (ja) 2001-08-01 2009-03-11 東京エレクトロン株式会社 ガス処理装置およびガス処理方法
JP3958539B2 (ja) 2001-08-02 2007-08-15 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4921652B2 (ja) 2001-08-03 2012-04-25 エイエスエム インターナショナル エヌ．ヴェー． イットリウム酸化物およびランタン酸化物薄膜を堆積する方法
US6896929B2 (en) 2001-08-03 2005-05-24 Applied Materials, Inc. Susceptor shaft vacuum pumping
US7138336B2 (en) 2001-08-06 2006-11-21 Asm Genitech Korea Ltd. Plasma enhanced atomic layer deposition (PEALD) equipment and method of forming a conducting thin film using the same thereof
US6678583B2 (en) 2001-08-06 2004-01-13 Seminet, Inc. Robotic storage buffer system for substrate carrier pods
JP2003060012A (ja) 2001-08-08 2003-02-28 Asm Japan Kk 半導体処理用反応チャンバ
JP3775262B2 (ja) 2001-08-09 2006-05-17 ヤマハ株式会社 電子楽器及び電子楽器システム
US6734111B2 (en) 2001-08-09 2004-05-11 Comlase Ab Method to GaAs based lasers and a GaAs based laser
US20030029563A1 (en) 2001-08-10 2003-02-13 Applied Materials, Inc. Corrosion resistant coating for semiconductor processing chamber
TW559905B (en) 2001-08-10 2003-11-01 Toshiba Corp Vertical chemical vapor deposition system cross-reference to related applications
US6531412B2 (en) 2001-08-10 2003-03-11 International Business Machines Corporation Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applications
JP2003059999A (ja) 2001-08-14 2003-02-28 Tokyo Electron Ltd 処理システム
US6820570B2 (en) 2001-08-15 2004-11-23 Nobel Biocare Services Ag Atomic layer deposition reactor
US20030035002A1 (en) 2001-08-15 2003-02-20 Samsung Electronics Co., Ltd. Alternate interpretation of markup language documents
USD699816S1 (en) 2001-08-17 2014-02-18 Neoperl Gmbh Stream straightener for faucet
JP2003060076A (ja) 2001-08-21 2003-02-28 Nec Corp 半導体装置及びその製造方法
KR100604751B1 (ko) 2001-08-24 2006-07-26 주식회사 하이닉스반도체 산 확산 방지용 포토레지스트 공중합체 및 이를 함유하는포토레지스트 조성물
US20030037800A1 (en) 2001-08-27 2003-02-27 Applied Materials, Inc. Method for removing contamination particles from substrate processing chambers
KR20030018134A (ko) 2001-08-27 2003-03-06 한국전자통신연구원 조성과 도핑 농도의 제어를 위한 반도체 소자의 절연막형성 방법
JP3886424B2 (ja) 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP2003077782A (ja) 2001-08-31 2003-03-14 Toshiba Corp 半導体装置の製造方法
JP3832293B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP3832294B2 (ja) 2001-08-31 2006-10-11 株式会社ダイフク 荷保管設備
JP4460803B2 (ja) 2001-09-05 2010-05-12 パナソニック株式会社 基板表面処理方法
JP2003077845A (ja) 2001-09-05 2003-03-14 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
US6521547B1 (en) 2001-09-07 2003-02-18 United Microelectronics Corp. Method of repairing a low dielectric constant material layer
JP2003158127A (ja) 2001-09-07 2003-05-30 Arieesu Gijutsu Kenkyu Kk 成膜方法、成膜装置、及び半導体装置
US9708707B2 (en) 2001-09-10 2017-07-18 Asm International N.V. Nanolayer deposition using bias power treatment
US6756318B2 (en) 2001-09-10 2004-06-29 Tegal Corporation Nanolayer thick film processing system and method
JP4094262B2 (ja) 2001-09-13 2008-06-04 住友大阪セメント株式会社 吸着固定装置及びその製造方法
AU2002333601A1 (en) 2001-09-14 2003-04-01 Asm America, Inc. Metal nitride deposition by ald using gettering reactant
US6756085B2 (en) 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US6541370B1 (en) 2001-09-17 2003-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Composite microelectronic dielectric layer with inhibited crack susceptibility
JP2003100717A (ja) 2001-09-21 2003-04-04 Tokyo Electron Ltd プラズマ処理装置
US6607976B2 (en) 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
US20030059535A1 (en) 2001-09-25 2003-03-27 Lee Luo Cycling deposition of low temperature films in a cold wall single wafer process chamber
US7049226B2 (en) 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6782305B2 (en) 2001-10-01 2004-08-24 Massachusetts Institute Of Technology Method of geometric information sharing and parametric consistency maintenance in a collaborative design environment
US6720259B2 (en) 2001-10-02 2004-04-13 Genus, Inc. Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition
US6960537B2 (en) 2001-10-02 2005-11-01 Asm America, Inc. Incorporation of nitrogen into high k dielectric film
KR100431658B1 (ko) 2001-10-05 2004-05-17 삼성전자주식회사 기판 가열 장치 및 이를 갖는 장치
US6656282B2 (en) 2001-10-11 2003-12-02 Moohan Co., Ltd. Atomic layer deposition apparatus and process using remote plasma
US6461436B1 (en) 2001-10-15 2002-10-08 Micron Technology, Inc. Apparatus and process of improving atomic layer deposition chamber performance
US6936183B2 (en) 2001-10-17 2005-08-30 Applied Materials, Inc. Etch process for etching microstructures
JP2003133299A (ja) 2001-10-24 2003-05-09 Oki Electric Ind Co Ltd 半導体製造装置および半導体製造方法
US20080102203A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
DE60203413T2 (de) 2001-10-26 2006-04-20 Applied Materials, Inc., Santa Clara Gaszuführvorrichtung zur abscheidung von atomaren schichten
US7780789B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Vortex chamber lids for atomic layer deposition
US20080102208A1 (en) 2001-10-26 2008-05-01 Dien-Yeh Wu Vortex chamber lids for atomic layer deposition
JP2003133300A (ja) 2001-10-26 2003-05-09 Tokyo Electron Ltd 成膜装置及び成膜方法
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003038145A2 (en) 2001-10-29 2003-05-08 Genus, Inc. Chemical vapor deposition system
US20050054198A1 (en) 2001-11-05 2005-03-10 Um Pyung Yong Apparatus of chemical vapor deposition
US20040253867A1 (en) 2001-11-05 2004-12-16 Shuzo Matsumoto Circuit part connector structure and gasket
KR100760291B1 (ko) 2001-11-08 2007-09-19 에이에스엠지니텍코리아 주식회사 박막 형성 방법
KR100481307B1 (ko) 2001-11-08 2005-04-07 삼성전자주식회사 반도체 제조 설비의 카세트 테이블
KR100782529B1 (ko) 2001-11-08 2007-12-06 에이에스엠지니텍코리아 주식회사 증착 장치
EP1446408A1 (en) 2001-11-09 2004-08-18 Yun Chi Volatile noble metal organometallic complexes
US6975921B2 (en) 2001-11-09 2005-12-13 Asm International Nv Graphical representation of a wafer processing process
KR20030039247A (ko) 2001-11-12 2003-05-17 주성엔지니어링(주) 서셉터
US20040010772A1 (en) 2001-11-13 2004-01-15 General Electric Company Interactive method and system for faciliting the development of computer software applications
AU2002343029A1 (en) 2001-11-16 2003-06-10 Trikon Holdings Limited Forming low k dielectric layers
JP2003153706A (ja) 2001-11-20 2003-05-27 Toyobo Co Ltd 面ファスナー雌材及びその製造方法
US6926774B2 (en) 2001-11-21 2005-08-09 Applied Materials, Inc. Piezoelectric vaporizer
KR100588774B1 (ko) 2001-11-26 2006-06-14 주성엔지니어링(주) 웨이퍼 서셉터
USD461233S1 (en) 2001-11-29 2002-08-06 James Michael Whalen Marine deck drain strainer
JP4116283B2 (ja) 2001-11-30 2008-07-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
DE60239828D1 (de) 2001-11-30 2011-06-01 Panasonic Corp Ür
US7017514B1 (en) 2001-12-03 2006-03-28 Novellus Systems, Inc. Method and apparatus for plasma optimization in water processing
US6638879B2 (en) 2001-12-06 2003-10-28 Macronix International Co., Ltd. Method for forming nitride spacer by using atomic layer deposition
SG152910A1 (en) 2001-12-07 2009-06-29 Tokyo Electron Ltd Nitriding method for insulation film, semiconductor device and production method for semiconductor device, substrate treating device and substrate treating method
KR100446619B1 (ko) 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
US6699784B2 (en) 2001-12-14 2004-03-02 Applied Materials Inc. Method for depositing a low k dielectric film (K>3.5) for hard mask application
SE0104252D0 (sv) 2001-12-17 2001-12-17 Sintercast Ab New device
US20030111013A1 (en) 2001-12-19 2003-06-19 Oosterlaken Theodorus Gerardus Maria Method for the deposition of silicon germanium layers
US20030116087A1 (en) 2001-12-21 2003-06-26 Nguyen Anh N. Chamber hardware design for titanium nitride atomic layer deposition
US6841201B2 (en) 2001-12-21 2005-01-11 The Procter & Gamble Company Apparatus and method for treating a workpiece using plasma generated from microwave radiation
DE10163394A1 (de) 2001-12-21 2003-07-03 Aixtron Ag Verfahren und Vorrichtung zum Abscheiden kristalliner Schichten und auf kristallinen Substraten
JP3891267B2 (ja) 2001-12-25 2007-03-14 キヤノンアネルバ株式会社 シリコン酸化膜作製方法
KR100442104B1 (ko) 2001-12-27 2004-07-27 삼성전자주식회사 커패시터를 갖는 반도체 소자의 제조방법
US20030124842A1 (en) 2001-12-27 2003-07-03 Applied Materials, Inc. Dual-gas delivery system for chemical vapor deposition processes
US20030124818A1 (en) 2001-12-28 2003-07-03 Applied Materials, Inc. Method and apparatus for forming silicon containing films
US6497734B1 (en) 2002-01-02 2002-12-24 Novellus Systems, Inc. Apparatus and method for enhanced degassing of semiconductor wafers for increased throughput
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
US6942929B2 (en) 2002-01-08 2005-09-13 Nianci Han Process chamber having component with yttrium-aluminum coating
US7371467B2 (en) 2002-01-08 2008-05-13 Applied Materials, Inc. Process chamber component having electroplated yttrium containing coating
EP1475828A4 (en) 2002-01-15 2012-02-22 Tokyo Electron Ltd CHEMICAL VAPOR DEPOSITION METHOD AND DEVICE FOR FORMING SILICON-BASED INSULATING FILM
US6827815B2 (en) 2002-01-15 2004-12-07 Applied Materials, Inc. Showerhead assembly for a processing chamber
US6580050B1 (en) 2002-01-16 2003-06-17 Pace, Incorporated Soldering station with built-in self-calibration function
US6911092B2 (en) 2002-01-17 2005-06-28 Sundew Technologies, Llc ALD apparatus and method
JP4071968B2 (ja) 2002-01-17 2008-04-02 東芝三菱電機産業システム株式会社 ガス供給システム及びガス供給方法
US7077913B2 (en) 2002-01-17 2006-07-18 Hitachi Kokusai Electric, Inc. Apparatus for fabricating a semiconductor device
US6760981B2 (en) 2002-01-18 2004-07-13 Speedline Technologies, Inc. Compact convection drying chamber for drying printed circuit boards and other electronic assemblies by enhanced evaporation
US6793733B2 (en) 2002-01-25 2004-09-21 Applied Materials Inc. Gas distribution showerhead
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6866746B2 (en) 2002-01-26 2005-03-15 Applied Materials, Inc. Clamshell and small volume chamber with fixed substrate support
KR100450669B1 (ko) 2002-01-30 2004-10-01 삼성전자주식회사 산소 침투 경로 및 캡슐화 장벽막을 구비하는 강유전체메모리 소자 및 그 제조 방법
US20030141820A1 (en) 2002-01-30 2003-07-31 Applied Materials, Inc. Method and apparatus for substrate processing
DE10203838B4 (de) 2002-01-31 2006-12-28 Infineon Technologies Ag Fluorhaltiger Fotoresist mit Reaktionsankern für eine chemische Nachverstärkung und verbesserten Copolymerisationseigenschaften
US7115305B2 (en) 2002-02-01 2006-10-03 California Institute Of Technology Method of producing regular arrays of nano-scale objects using nano-structured block-copolymeric materials
KR100377095B1 (en) 2002-02-01 2003-03-20 Nexo Co Ltd Semiconductor fabrication apparatus using low energy plasma
US20080264443A1 (en) 2002-02-05 2008-10-30 Novellus Systems, Inc. Apparatus and methods for increasing the rate of solute concentration evolution in a supercritical process chamber
US6732006B2 (en) 2002-02-06 2004-05-04 Asm International Nv Method and system to process semiconductor wafers
US6899507B2 (en) 2002-02-08 2005-05-31 Asm Japan K.K. Semiconductor processing apparatus comprising chamber partitioned into reaction and transfer sections
US6777352B2 (en) 2002-02-11 2004-08-17 Applied Materials, Inc. Variable flow deposition apparatus and method in semiconductor substrate processing
US7479304B2 (en) 2002-02-14 2009-01-20 Applied Materials, Inc. Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate
DE10207131B4 (de) 2002-02-20 2007-12-20 Infineon Technologies Ag Verfahren zur Bildung einer Hartmaske in einer Schicht auf einer flachen Scheibe
US6734090B2 (en) 2002-02-20 2004-05-11 International Business Machines Corporation Method of making an edge seal for a semiconductor device
JP2003243481A (ja) 2002-02-21 2003-08-29 Asm Japan Kk 半導体製造装置及びメンテナンス方法
NL1020054C2 (nl) 2002-02-25 2003-09-05 Asm Int Inrichting voor het behandelen van wafers, voorzien van een meetmiddelendoos.
US6787185B2 (en) 2002-02-25 2004-09-07 Micron Technology, Inc. Deposition methods for improved delivery of metastable species
US6766545B2 (en) 2002-02-27 2004-07-27 B. Eugene Hodges Shower drain
US20030159653A1 (en) 2002-02-28 2003-08-28 Dando Ross S. Manifold assembly for feeding reactive precursors to substrate processing chambers
US20050063451A1 (en) 2002-02-28 2005-03-24 Shin-Etsu Handotai Co., Ltd Temperature measuring system, heating device using it and production method for semiconductor wafer, heat ray insulating translucent member, visible light reflection membner, exposure system-use reflection mirror and exposure system, and semiconductor device produced by using them and vetical heat treating device
US20030170583A1 (en) 2002-03-01 2003-09-11 Hitachi Kokusai Electric Inc. Heat treatment apparatus and a method for fabricating substrates
KR100449028B1 (ko) 2002-03-05 2004-09-16 삼성전자주식회사 원자층 증착법을 이용한 박막 형성방법
KR100997699B1 (ko) 2002-03-05 2010-12-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
US20030168012A1 (en) 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
US6596973B1 (en) 2002-03-07 2003-07-22 Asm America, Inc. Pyrometer calibrated wafer temperature estimator
US20030168174A1 (en) 2002-03-08 2003-09-11 Foree Michael Todd Gas cushion susceptor system
EP1485513A2 (en) 2002-03-08 2004-12-15 Sundew Technologies, LLC Ald method and apparatus
US6753618B2 (en) 2002-03-11 2004-06-22 Micron Technology, Inc. MIM capacitor with metal nitride electrode materials and method of formation
JP2003264186A (ja) 2002-03-11 2003-09-19 Asm Japan Kk Ｃｖｄ装置処理室のクリーニング方法
US6746240B2 (en) 2002-03-15 2004-06-08 Asm International N.V. Process tube support sleeve with circumferential channels
US6902395B2 (en) 2002-03-15 2005-06-07 Asm International, N.V. Multilevel pedestal for furnace
US6776849B2 (en) 2002-03-15 2004-08-17 Asm America, Inc. Wafer holder with peripheral lift ring
US6835039B2 (en) 2002-03-15 2004-12-28 Asm International N.V. Method and apparatus for batch processing of wafers in a furnace
US6962644B2 (en) 2002-03-18 2005-11-08 Applied Materials, Inc. Tandem etch chamber plasma processing system
US20030173346A1 (en) 2002-03-18 2003-09-18 Renken Wayne Glenn System and method for heating and cooling wafer at accelerated rates
JP4157914B2 (ja) 2002-03-20 2008-10-01 坂野 數仁 温度測定装置及び温度測定方法
US6780787B2 (en) 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
US20030178145A1 (en) 2002-03-25 2003-09-25 Applied Materials, Inc. Closed hole edge lift pin and susceptor for wafer process chambers
US6825134B2 (en) 2002-03-26 2004-11-30 Applied Materials, Inc. Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow
JP4099092B2 (ja) 2002-03-26 2008-06-11 東京エレクトロン株式会社 基板処理装置および基板処理方法、高速ロータリバルブ
US6800134B2 (en) 2002-03-26 2004-10-05 Micron Technology, Inc. Chemical vapor deposition methods and atomic layer deposition methods
JP4128383B2 (ja) 2002-03-27 2008-07-30 東京エレクトロン株式会社 処理装置及び処理方法
KR100996816B1 (ko) 2002-03-28 2010-11-25 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 이산화규소 나노라미네이트의 증기증착
US6883733B1 (en) 2002-03-28 2005-04-26 Novellus Systems, Inc. Tapered post, showerhead design to improve mixing on dual plenum showerheads
DE10214066B4 (de) 2002-03-28 2007-02-01 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement mit retrogradem Dotierprofil in einem Kanalgebiet und Verfahren zur Herstellung desselben
US20030231698A1 (en) 2002-03-29 2003-12-18 Takatomo Yamaguchi Apparatus and method for fabricating a semiconductor device and a heat treatment apparatus
JP4001498B2 (ja) 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
US6594550B1 (en) 2002-03-29 2003-07-15 Asm America, Inc. Method and system for using a buffer to track robotic movement
JP4106948B2 (ja) 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US6843858B2 (en) 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
KR100829327B1 (ko) 2002-04-05 2008-05-13 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반응 용기
US20030188685A1 (en) 2002-04-08 2003-10-09 Applied Materials, Inc. Laser drilled surfaces for substrate processing chambers
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
KR20030081144A (ko) 2002-04-11 2003-10-17 가부시키가이샤 히다치 고쿠사이 덴키 종형 반도체 제조 장치
JP4092937B2 (ja) 2002-04-11 2008-05-28 松下電工株式会社 プラズマ処理装置及びプラズマ処理方法
US6710312B2 (en) 2002-04-12 2004-03-23 B H Thermal Corporation Heating jacket assembly with field replaceable thermostat
US7988833B2 (en) 2002-04-12 2011-08-02 Schneider Electric USA, Inc. System and method for detecting non-cathode arcing in a plasma generation apparatus
US7279432B2 (en) 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US8293001B2 (en) 2002-04-17 2012-10-23 Air Products And Chemicals, Inc. Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants
US6846515B2 (en) 2002-04-17 2005-01-25 Air Products And Chemicals, Inc. Methods for using porogens and/or porogenated precursors to provide porous organosilica glass films with low dielectric constants
KR100439948B1 (ko) 2002-04-19 2004-07-12 주식회사 아이피에스 리모트 플라즈마 ａｌｄ 장치 및 이를 이용한 ａｌｄ 박막증착방법
AU2003224977A1 (en) 2002-04-19 2003-11-03 Mattson Technology, Inc. System for depositing a film onto a substrate using a low vapor pressure gas precursor
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6825126B2 (en) 2002-04-25 2004-11-30 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
KR100472730B1 (ko) 2002-04-26 2005-03-08 주식회사 하이닉스반도체 원자층증착법을 이용한 반도체 소자의 금속전극 형성방법
US7045430B2 (en) 2002-05-02 2006-05-16 Micron Technology Inc. Atomic layer-deposited LaAlO3 films for gate dielectrics
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
US7589029B2 (en) 2002-05-02 2009-09-15 Micron Technology, Inc. Atomic layer deposition and conversion
US6684719B2 (en) 2002-05-03 2004-02-03 Caterpillar Inc Method and apparatus for mixing gases
US7086347B2 (en) 2002-05-06 2006-08-08 Lam Research Corporation Apparatus and methods for minimizing arcing in a plasma processing chamber
JP2003324072A (ja) 2002-05-07 2003-11-14 Nec Electronics Corp 半導体製造装置
US20030209326A1 (en) 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor
KR100437458B1 (ko) 2002-05-07 2004-06-23 삼성전자주식회사 상변화 기억 셀들 및 그 제조방법들
JP4338355B2 (ja) 2002-05-10 2009-10-07 東京エレクトロン株式会社 プラズマ処理装置
US7122844B2 (en) 2002-05-13 2006-10-17 Cree, Inc. Susceptor for MOCVD reactor
US6682973B1 (en) 2002-05-16 2004-01-27 Advanced Micro Devices, Inc. Formation of well-controlled thin SiO, SiN, SiON layer for multilayer high-K dielectric applications
US20030213560A1 (en) 2002-05-16 2003-11-20 Yaxin Wang Tandem wafer processing system and process
KR100466818B1 (ko) 2002-05-17 2005-01-24 주식회사 하이닉스반도체 반도체 소자의 절연막 형성 방법
US6825051B2 (en) 2002-05-17 2004-11-30 Asm America, Inc. Plasma etch resistant coating and process
US7074298B2 (en) 2002-05-17 2006-07-11 Applied Materials High density plasma CVD chamber
US6797525B2 (en) 2002-05-22 2004-09-28 Agere Systems Inc. Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process
US6902656B2 (en) 2002-05-24 2005-06-07 Dalsa Semiconductor Inc. Fabrication of microstructures with vacuum-sealed cavity
KR20030092305A (ko) 2002-05-29 2003-12-06 삼성전자주식회사 고온 언도우프 막 증착 설비의 챔버 외벽에 대한 온도측정장치
JP4311914B2 (ja) 2002-06-05 2009-08-12 住友電気工業株式会社 半導体製造装置用ヒータモジュール
US7135421B2 (en) 2002-06-05 2006-11-14 Micron Technology, Inc. Atomic layer-deposited hafnium aluminum oxide
US20060014384A1 (en) 2002-06-05 2006-01-19 Jong-Cheol Lee Method of forming a layer and forming a capacitor of a semiconductor device having the same layer
US7195693B2 (en) 2002-06-05 2007-03-27 Advanced Thermal Sciences Lateral temperature equalizing system for large area surfaces during processing
AU2003242104A1 (en) 2002-06-10 2003-12-22 Tokyo Electron Limited Processing device and processing method
JP2004014952A (ja) 2002-06-10 2004-01-15 Tokyo Electron Ltd 処理装置および処理方法
US6849464B2 (en) 2002-06-10 2005-02-01 Micron Technology, Inc. Method of fabricating a multilayer dielectric tunnel barrier structure
US6858547B2 (en) 2002-06-14 2005-02-22 Applied Materials, Inc. System and method for forming a gate dielectric
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
US7601225B2 (en) 2002-06-17 2009-10-13 Asm International N.V. System for controlling the sublimation of reactants
AU2003241712A1 (en) 2002-06-18 2003-12-31 Tokuyama Corporation Reaction apparatus for producing silicon
JP2004022902A (ja) 2002-06-18 2004-01-22 Fujitsu Ltd 半導体装置の製造方法
US20030234371A1 (en) 2002-06-19 2003-12-25 Ziegler Byron J. Device for generating reactive ions
KR100455297B1 (ko) 2002-06-19 2004-11-06 삼성전자주식회사 무기물 나노튜브 제조방법
JP3670628B2 (ja) 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
TWI278532B (en) 2002-06-23 2007-04-11 Asml Us Inc Method for energy-assisted atomic layer deposition and removal
US6552209B1 (en) 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
JP3999059B2 (ja) 2002-06-26 2007-10-31 東京エレクトロン株式会社 基板処理システム及び基板処理方法
US7255775B2 (en) 2002-06-28 2007-08-14 Toshiba Ceramics Co., Ltd. Semiconductor wafer treatment member
JP4278441B2 (ja) 2002-06-28 2009-06-17 コバレントマテリアル株式会社 半導体ウエハ処理用部材
US6827789B2 (en) 2002-07-01 2004-12-07 Semigear, Inc. Isolation chamber arrangement for serial processing of semiconductor wafers for the electronic industry
US20040018750A1 (en) 2002-07-02 2004-01-29 Sophie Auguste J.L. Method for deposition of nitrogen doped silicon carbide films
US6869641B2 (en) 2002-07-03 2005-03-22 Unaxis Balzers Ltd. Method and apparatus for ALD on a rotary susceptor
US7356762B2 (en) 2002-07-08 2008-04-08 Asm International Nv Method for the automatic generation of an interactive electronic equipment documentation package
US6821347B2 (en) 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
KR100505668B1 (ko) 2002-07-08 2005-08-03 삼성전자주식회사 원자층 증착 방법에 의한 실리콘 산화막 형성 방법
US6838125B2 (en) 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
TWI277140B (en) 2002-07-12 2007-03-21 Asm Int Method and apparatus for the pulse-wise supply of a vaporized liquid reactant
US20050136657A1 (en) 2002-07-12 2005-06-23 Tokyo Electron Limited Film-formation method for semiconductor process
EP1543177A1 (en) 2002-07-12 2005-06-22 President And Fellows Of Harvard College Vapor deposition of tungsten nitride
EP1522090A4 (en) 2002-07-15 2006-04-05 Aviza Tech Inc THERMAL PROCESSING SYSTEM AND CONFIGURABLE VERTICAL CHAMBER
US20070243317A1 (en) 2002-07-15 2007-10-18 Du Bois Dale R Thermal Processing System and Configurable Vertical Chamber
US6976822B2 (en) 2002-07-16 2005-12-20 Semitool, Inc. End-effectors and transfer devices for handling microelectronic workpieces
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
JP4186536B2 (ja) 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
US7357138B2 (en) 2002-07-18 2008-04-15 Air Products And Chemicals, Inc. Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
KR100447284B1 (ko) 2002-07-19 2004-09-07 삼성전자주식회사 화학기상증착 챔버의 세정 방법
JP4133062B2 (ja) 2002-07-19 2008-08-13 大日本スクリーン製造株式会社 熱処理装置
TW200427858A (en) 2002-07-19 2004-12-16 Asml Us Inc Atomic layer deposition of high k dielectric films
JP2005534111A (ja) 2002-07-19 2005-11-10 マイクロリス・コーポレーション 液体流量制御器および精密分注装置およびシステム
WO2004010467A2 (en) 2002-07-19 2004-01-29 Aviza Technology, Inc. Low temperature dielectric deposition using aminosilane and ozone
JP5005170B2 (ja) 2002-07-19 2012-08-22 エーエスエム アメリカ インコーポレイテッド 超高品質シリコン含有化合物層の形成方法
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6921062B2 (en) 2002-07-23 2005-07-26 Advanced Technology Materials, Inc. Vaporizer delivery ampoule
US7223323B2 (en) 2002-07-24 2007-05-29 Applied Materials, Inc. Multi-chemistry plating system
US7018555B2 (en) 2002-07-26 2006-03-28 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
KR100464855B1 (ko) 2002-07-26 2005-01-06 삼성전자주식회사 박막 형성 방법과, 이를 이용한 커패시터 형성 방법 및트랜지스터 형성 방법
JP3908112B2 (ja) 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
US6844119B2 (en) 2002-07-30 2005-01-18 Hoya Corporation Method for producing a halftone phase shift mask blank, a halftone phase shift mask blank and halftone phase shift mask
DE10234694A1 (de) 2002-07-30 2004-02-12 Infineon Technologies Ag Verfahren zum Oxidieren einer Schicht und zugehörige Aufnamevorrichtung für ein Substrat
AU2003254266A1 (en) 2002-07-30 2004-02-16 Asm America, Inc. Sublimation system employing carrier gas
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
DE10235427A1 (de) 2002-08-02 2004-02-12 Eos Gmbh Electro Optical Systems Vorrichtung und Verfahren zum Herstellen von dreidimensionalen Objekten mittels eines generativen Fertigungsverfahrens
US7153542B2 (en) 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
US6818864B2 (en) 2002-08-09 2004-11-16 Asm America, Inc. LED heat lamp arrays for CVD heating
JP4034145B2 (ja) 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
KR100480610B1 (ko) 2002-08-09 2005-03-31 삼성전자주식회사 실리콘 산화막을 이용한 미세 패턴 형성방법
US6890596B2 (en) 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
US7085623B2 (en) 2002-08-15 2006-08-01 Asm International Nv Method and system for using short ranged wireless enabled computers as a service tool
US7192486B2 (en) 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
US6887521B2 (en) 2002-08-15 2005-05-03 Micron Technology, Inc. Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices
TW200408015A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high K metal silicates
TW200408323A (en) 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
US6649921B1 (en) 2002-08-19 2003-11-18 Fusion Uv Systems, Inc. Apparatus and method providing substantially two-dimensionally uniform irradiation
US6927140B2 (en) 2002-08-21 2005-08-09 Intel Corporation Method for fabricating a bipolar transistor base
US20040036129A1 (en) 2002-08-22 2004-02-26 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions
US6884296B2 (en) 2002-08-23 2005-04-26 Micron Technology, Inc. Reactors having gas distributors and methods for depositing materials onto micro-device workpieces
US6967154B2 (en) 2002-08-26 2005-11-22 Micron Technology, Inc. Enhanced atomic layer deposition
US7041609B2 (en) 2002-08-28 2006-05-09 Micron Technology, Inc. Systems and methods for forming metal oxides using alcohols
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6902647B2 (en) 2002-08-29 2005-06-07 Asm International N.V. Method of processing substrates with integrated weighing steps
JP2004091848A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd 薄膜形成装置の原料ガス供給系および薄膜形成装置
US7256375B2 (en) 2002-08-30 2007-08-14 Asm International N.V. Susceptor plate for high temperature heat treatment
USD511280S1 (en) 2002-09-04 2005-11-08 Thermal Dynamics Corporation Plasma arc torch tip
WO2004025697A2 (en) 2002-09-10 2004-03-25 Fsi International, Inc. Thermal process station with heated lid
US6936086B2 (en) 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7122415B2 (en) 2002-09-12 2006-10-17 Promos Technologies, Inc. Atomic layer deposition of interpoly oxides in a non-volatile memory device
JP2004103990A (ja) 2002-09-12 2004-04-02 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法
US7011299B2 (en) 2002-09-16 2006-03-14 Matheson Tri-Gas, Inc. Liquid vapor delivery system and method of maintaining a constant level of fluid therein
KR100497748B1 (ko) 2002-09-17 2005-06-29 주식회사 무한 반도체소자 제조용 원자층 증착 장치 및 원자층 증착 방법
US7411352B2 (en) 2002-09-19 2008-08-12 Applied Process Technologies, Inc. Dual plasma beam sources and method
US6905940B2 (en) 2002-09-19 2005-06-14 Applied Materials, Inc. Method using TEOS ramp-up during TEOS/ozone CVD for improved gap-fill
JP3594947B2 (ja) 2002-09-19 2004-12-02 東京エレクトロン株式会社 絶縁膜の形成方法、半導体装置の製造方法、基板処理装置
US6715949B1 (en) 2002-09-20 2004-04-06 Eastman Kodak Company Medium-handling in printer for donor and receiver mediums
US7252738B2 (en) 2002-09-20 2007-08-07 Lam Research Corporation Apparatus for reducing polymer deposition on a substrate and substrate support
US6767824B2 (en) 2002-09-23 2004-07-27 Padmapani C. Nallan Method of fabricating a gate structure of a field effect transistor using an alpha-carbon mask
JP4231953B2 (ja) 2002-09-24 2009-03-04 ペガサスネット株式会社 耳孔式ｓａｗ体温計及び該体温計による体温管理システム
JP3887291B2 (ja) 2002-09-24 2007-02-28 東京エレクトロン株式会社 基板処理装置
JP3877157B2 (ja) 2002-09-24 2007-02-07 東京エレクトロン株式会社 基板処理装置
US6696367B1 (en) 2002-09-27 2004-02-24 Asm America, Inc. System for the improved handling of wafers within a process tool
JP2004127957A (ja) 2002-09-30 2004-04-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
JP2004128019A (ja) 2002-09-30 2004-04-22 Applied Materials Inc プラズマ処理方法及び装置
US20040065255A1 (en) 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US20070051471A1 (en) 2002-10-04 2007-03-08 Applied Materials, Inc. Methods and apparatus for stripping
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
US7445690B2 (en) 2002-10-07 2008-11-04 Tokyo Electron Limited Plasma processing apparatus
US7749563B2 (en) 2002-10-07 2010-07-06 Applied Materials, Inc. Two-layer film for next generation damascene barrier application with good oxidation resistance
JP3671951B2 (ja) 2002-10-08 2005-07-13 住友電気工業株式会社 測温装置及びそれを用いたセラミックスヒータ
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP2004134553A (ja) 2002-10-10 2004-04-30 Sony Corp レジストパターンの形成方法及び半導体装置の製造方法
EP1408140A1 (en) 2002-10-11 2004-04-14 STMicroelectronics S.r.l. A high-density plasma process for depositing a layer of Silicon Nitride
US6905737B2 (en) 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7080545B2 (en) 2002-10-17 2006-07-25 Advanced Technology Materials, Inc. Apparatus and process for sensing fluoro species in semiconductor processing systems
US6818566B2 (en) 2002-10-18 2004-11-16 The Boc Group, Inc. Thermal activation of fluorine for use in a semiconductor chamber
KR100460841B1 (ko) 2002-10-22 2004-12-09 한국전자통신연구원 플라즈마 인가 원자층 증착법을 통한 질소첨가 산화물박막의 형성방법
US7144806B1 (en) 2002-10-23 2006-12-05 Novellus Systems, Inc. ALD of tantalum using a hydride reducing agent
US6821909B2 (en) 2002-10-30 2004-11-23 Applied Materials, Inc. Post rinse to improve selective deposition of electroless cobalt on copper for ULSI application
JP2004153037A (ja) 2002-10-31 2004-05-27 Renesas Technology Corp 半導体装置の製造方法
US6982230B2 (en) 2002-11-08 2006-01-03 International Business Machines Corporation Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
JP4009523B2 (ja) 2002-11-14 2007-11-14 岩谷産業株式会社 オゾンガス濃度計測方法及びオゾンガス濃度計測装置
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
KR101266442B1 (ko) 2002-11-15 2013-05-22 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속 아미디네이트를 이용한 원자층 증착법
JP4502590B2 (ja) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
US6676290B1 (en) 2002-11-15 2004-01-13 Hsueh-Yu Lu Electronic clinical thermometer
KR100520902B1 (ko) 2002-11-20 2005-10-12 주식회사 아이피에스 알루미늄 화합물을 이용한 박막증착방법
JP3946130B2 (ja) 2002-11-20 2007-07-18 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7062161B2 (en) 2002-11-28 2006-06-13 Dainippon Screen Mfg. Co., Ltd. Photoirradiation thermal processing apparatus and thermal processing susceptor employed therefor
AU2003280854A1 (en) 2002-11-28 2004-06-18 Tokyo Electron Limited Wafer processing system, coating/developing apparatus, and wafer processing apparatus
KR100496265B1 (ko) 2002-11-29 2005-06-17 한국전자통신연구원 반도체 소자의 박막 형성방법
KR100486690B1 (ko) 2002-11-29 2005-05-03 삼성전자주식회사 기판 이송 모듈의 오염을 제어할 수 있는 기판 처리 장치및 방법
TW200410337A (en) 2002-12-02 2004-06-16 Au Optronics Corp Dry cleaning method for plasma reaction chamber
US6858524B2 (en) 2002-12-03 2005-02-22 Asm International, Nv Method of depositing barrier layer for metal gates
US7122414B2 (en) 2002-12-03 2006-10-17 Asm International, Inc. Method to fabricate dual metal CMOS devices
US6895158B2 (en) 2002-12-09 2005-05-17 Eastman Kodak Company Waveguide and method of smoothing optical surfaces
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
USD496008S1 (en) 2002-12-12 2004-09-14 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
USD494552S1 (en) 2002-12-12 2004-08-17 Tokyo Electron Limited Exhaust ring for manufacturing semiconductors
US6929699B2 (en) 2002-12-13 2005-08-16 Texas Instruments Incorporated Gas injectors for a vertical furnace used in semiconductor processing
JP2004244298A (ja) 2002-12-17 2004-09-02 Kobe Steel Ltd ダイヤモンド気相合成用基板ホルダ及びダイヤモンド気相合成方法
US7296532B2 (en) 2002-12-18 2007-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Bypass gas feed system and method to improve reactant gas flow and film deposition
US7092287B2 (en) 2002-12-18 2006-08-15 Asm International N.V. Method of fabricating silicon nitride nanodots
DE10259945A1 (de) 2002-12-20 2004-07-01 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe mit verlängerter Fluoreszenzlebensdauer
AU2003301074A1 (en) 2002-12-20 2004-07-22 Brooks Automation, Inc. System and method for on-the-fly eccentricity recognition
CN2588350Y (zh) 2002-12-26 2003-11-26 张连合 一种热电偶
JP2004207564A (ja) 2002-12-26 2004-07-22 Fujitsu Ltd 半導体装置の製造方法と半導体装置
US6855645B2 (en) 2002-12-30 2005-02-15 Novellus Systems, Inc. Silicon carbide having low dielectric constant
DE10261362B8 (de) 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter
US6692249B1 (en) 2003-01-06 2004-02-17 Texas Instruments Incorporated Hot liner insertion/removal fixture
US7270713B2 (en) 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
US7262133B2 (en) 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US6790788B2 (en) 2003-01-13 2004-09-14 Applied Materials Inc. Method of improving stability in low k barrier layers
USD486891S1 (en) 2003-01-21 2004-02-17 Richard W. Cronce, Jr. Vent pipe protective cover
USD497977S1 (en) 2003-01-22 2004-11-02 Tour & Andersson Ab Sealing ring membrane
US7122222B2 (en) 2003-01-23 2006-10-17 Air Products And Chemicals, Inc. Precursors for depositing silicon containing films and processes thereof
US20040144980A1 (en) 2003-01-27 2004-07-29 Ahn Kie Y. Atomic layer deposition of metal oxynitride layers as gate dielectrics and semiconductor device structures utilizing metal oxynitride layers
USD497536S1 (en) 2003-01-28 2004-10-26 Bridgestone Corporation Rubber vibration insulator
USD558021S1 (en) 2003-01-30 2007-12-25 Roger Lawrence Metal fabrication clamp
JP2004235516A (ja) 2003-01-31 2004-08-19 Trecenti Technologies Inc ウエハ収納治具のパージ方法、ロードポートおよび半導体装置の製造方法
US20040152287A1 (en) 2003-01-31 2004-08-05 Sherrill Adrian B. Deposition of a silicon film
JP4472372B2 (ja) 2003-02-03 2010-06-02 株式会社オクテック プラズマ処理装置及びプラズマ処理装置用の電極板
US7163721B2 (en) 2003-02-04 2007-01-16 Tegal Corporation Method to plasma deposit on organic polymer dielectric film
US7713592B2 (en) 2003-02-04 2010-05-11 Tegal Corporation Nanolayer deposition process
US7129165B2 (en) 2003-02-04 2006-10-31 Asm Nutool, Inc. Method and structure to improve reliability of copper interconnects
JP2004241203A (ja) 2003-02-04 2004-08-26 Hitachi High-Technologies Corp プラズマ処理室壁処理方法
KR100505670B1 (ko) 2003-02-05 2005-08-03 삼성전자주식회사 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치
CN100429753C (zh) 2003-02-06 2008-10-29 东京毅力科创株式会社 等离子体处理方法、半导体基板以及等离子体处理装置
US6854580B2 (en) 2003-02-06 2005-02-15 Borgwarner, Inc. Torsional damper having variable bypass clutch with centrifugal release mechanism
US6876017B2 (en) 2003-02-08 2005-04-05 Intel Corporation Polymer sacrificial light absorbing structure and method
KR100505061B1 (ko) 2003-02-12 2005-08-01 삼성전자주식회사 기판 이송 모듈
JP4168775B2 (ja) 2003-02-12 2008-10-22 株式会社デンソー 薄膜の製造方法
US7374696B2 (en) 2003-02-14 2008-05-20 Applied Materials, Inc. Method and apparatus for removing a halogen-containing residue
TWI338323B (en) 2003-02-17 2011-03-01 Nikon Corp Stage device, exposure device and manufacguring method of devices
JP4214795B2 (ja) 2003-02-20 2009-01-28 東京エレクトロン株式会社 成膜方法
US20040163590A1 (en) 2003-02-24 2004-08-26 Applied Materials, Inc. In-situ health check of liquid injection vaporizer
US6917755B2 (en) 2003-02-27 2005-07-12 Applied Materials, Inc. Substrate support
US6930059B2 (en) 2003-02-27 2005-08-16 Sharp Laboratories Of America, Inc. Method for depositing a nanolaminate film by atomic layer deposition
US20040168627A1 (en) 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Atomic layer deposition of oxide film
US7091453B2 (en) 2003-02-27 2006-08-15 Dainippon Screen Mfg. Co., Ltd. Heat treatment apparatus by means of light irradiation
US7077911B2 (en) 2003-03-03 2006-07-18 Seiko Epson Corporation MOCVD apparatus and MOCVD method
US7098149B2 (en) 2003-03-04 2006-08-29 Air Products And Chemicals, Inc. Mechanical enhancement of dense and porous organosilicate materials by UV exposure
US7192892B2 (en) 2003-03-04 2007-03-20 Micron Technology, Inc. Atomic layer deposited dielectric layers
JP2004273766A (ja) 2003-03-07 2004-09-30 Watanabe Shoko:Kk 気化装置及びそれを用いた成膜装置並びに気化方法及び成膜方法
US7238653B2 (en) 2003-03-10 2007-07-03 Hynix Semiconductor Inc. Cleaning solution for photoresist and method for forming pattern using the same
US6867086B1 (en) 2003-03-13 2005-03-15 Novellus Systems, Inc. Multi-step deposition and etch back gap fill process
CN1777696B (zh) 2003-03-14 2011-04-20 杰努斯公司 用于原子层沉积的方法和设备
CA2462397C (en) 2003-03-24 2010-05-04 Thomas William Mccracken Mixing arrangement for atomizing nozzle in multi-phase flow
JP4369203B2 (ja) 2003-03-24 2009-11-18 信越化学工業株式会社 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2004288916A (ja) 2003-03-24 2004-10-14 Renesas Technology Corp Ｃｖｄ装置
JP2004294638A (ja) 2003-03-26 2004-10-21 Tokyo Ohka Kogyo Co Ltd ネガ型レジスト材料およびレジストパターン形成方法
JP4363401B2 (ja) 2003-03-26 2009-11-11 信越半導体株式会社 熱処理用ウェーハ支持具及び熱処理装置
US7223014B2 (en) 2003-03-28 2007-05-29 Intempco Controls Ltd. Remotely programmable integrated sensor transmitter
US6972055B2 (en) 2003-03-28 2005-12-06 Finens Corporation Continuous flow deposition system
US7208389B1 (en) 2003-03-31 2007-04-24 Novellus Systems, Inc. Method of porogen removal from porous low-k films using UV radiation
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
EP1612854A4 (en) 2003-04-07 2007-10-17 Tokyo Electron Ltd LOADING TABLE AND HEAT TREATMENT DEVICE WITH LOADING TABLE
SE525113C2 (sv) 2003-04-08 2004-11-30 Tetra Laval Holdings & Finance Metod och anordning för kontinuerlig blandning av två flöden
KR100500246B1 (ko) 2003-04-09 2005-07-11 삼성전자주식회사 가스공급장치
US7037376B2 (en) 2003-04-11 2006-05-02 Applied Materials Inc. Backflush chamber clean
US6843830B2 (en) 2003-04-15 2005-01-18 Advanced Technology Materials, Inc. Abatement system targeting a by-pass effluent stream of a semiconductor process tool
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
US7077973B2 (en) 2003-04-18 2006-07-18 Applied Materials, Inc. Methods for substrate orientation
KR100890493B1 (ko) 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치
JP2004336019A (ja) 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
TW200506093A (en) 2003-04-21 2005-02-16 Aviza Tech Inc System and method for forming multi-component films
US7183186B2 (en) 2003-04-22 2007-02-27 Micro Technology, Inc. Atomic layer deposited ZrTiO4 films
US7221553B2 (en) 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US6953608B2 (en) 2003-04-23 2005-10-11 Taiwan Semiconductor Manufacturing Co., Ltd. Solution for FSG induced metal corrosion & metal peeling defects with extra bias liner and smooth RF bias ramp up
US20040261946A1 (en) 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
US7335396B2 (en) 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US20040211357A1 (en) 2003-04-24 2004-10-28 Gadgil Pradad N. Method of manufacturing a gap-filled structure of a semiconductor device
US20040261712A1 (en) 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
KR200319645Y1 (ko) 2003-04-28 2003-07-12 이규옥 웨이퍼 캐리어 고정 장치
US7115528B2 (en) 2003-04-29 2006-10-03 Micron Technology, Inc. Systems and method for forming silicon oxide layers
US7375035B2 (en) 2003-04-29 2008-05-20 Ronal Systems Corporation Host and ancillary tool interface methodology for distributed processing
US7601223B2 (en) 2003-04-29 2009-10-13 Asm International N.V. Showerhead assembly and ALD methods
US7033113B2 (en) 2003-05-01 2006-04-25 Shell Oil Company Mid-line connector and method for pipe-in-pipe electrical heating
JP2004335715A (ja) 2003-05-07 2004-11-25 Toppoly Optoelectronics Corp シリコン酸化層の形成方法
US20090204403A1 (en) 2003-05-07 2009-08-13 Omega Engineering, Inc. Speech generating means for use with signal sensors
US6939817B2 (en) 2003-05-08 2005-09-06 Micron Technology, Inc. Removal of carbon from an insulative layer using ozone
US6905944B2 (en) 2003-05-08 2005-06-14 International Business Machines Corporation Sacrificial collar method for improved deep trench processing
JP4152802B2 (ja) 2003-05-09 2008-09-17 日本エー・エス・エム株式会社 薄膜形成装置
JP3642572B2 (ja) 2003-05-09 2005-04-27 東芝三菱電機産業システム株式会社 オゾン発生装置およびオゾン発生方法
US7265061B1 (en) 2003-05-09 2007-09-04 Novellus Systems, Inc. Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties
EP1623454A2 (en) 2003-05-09 2006-02-08 ASM America, Inc. Reactor surface passivation through chemical deactivation
US20040250600A1 (en) 2003-05-12 2004-12-16 Bevers William Daniel Method of mass flow control flow verification and calibration
US20050000428A1 (en) 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
US7846254B2 (en) 2003-05-16 2010-12-07 Applied Materials, Inc. Heat transfer assembly
USD505590S1 (en) 2003-05-22 2005-05-31 Kraft Foods Holdings, Inc. Susceptor tray
JP4403824B2 (ja) 2003-05-26 2010-01-27 東京エレクトロン株式会社 シリコン窒化膜の成膜方法
KR101104058B1 (ko) 2003-05-27 2012-01-06 어플라이드 머티어리얼스, 인코포레이티드 반도체 처리 장치를 위한 프리커서를 생성하는 방법 및장치
US7205240B2 (en) 2003-06-04 2007-04-17 Applied Materials, Inc. HDP-CVD multistep gapfill process
US7141500B2 (en) 2003-06-05 2006-11-28 American Air Liquide, Inc. Methods for forming aluminum containing films utilizing amino aluminum precursors
US8512798B2 (en) 2003-06-05 2013-08-20 Superpower, Inc. Plasma assisted metalorganic chemical vapor deposition (MOCVD) system
JP2005005406A (ja) 2003-06-10 2005-01-06 Semiconductor Leading Edge Technologies Inc 半導体装置の製造方法
US7589003B2 (en) 2003-06-13 2009-09-15 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
WO2005015609A2 (en) 2003-06-13 2005-02-17 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University Sixsnyge1-x-y and related alloy heterostructures based on si, ge and sn
DE10326755A1 (de) 2003-06-13 2006-01-26 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Entladungslampe mit Zweibanden-Leuchtstoff
US7598513B2 (en) 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
JP4823690B2 (ja) 2003-06-16 2011-11-24 東京エレクトロン株式会社 成膜方法および半導体装置の製造方法
WO2004113585A2 (en) 2003-06-18 2004-12-29 Applied Materials, Inc. Atomic layer deposition of barrier materials
US7192824B2 (en) 2003-06-24 2007-03-20 Micron Technology, Inc. Lanthanide oxide / hafnium oxide dielectric layers
US6955072B2 (en) 2003-06-25 2005-10-18 Mks Instruments, Inc. System and method for in-situ flow verification and calibration
US7021330B2 (en) 2003-06-26 2006-04-04 Planar Systems, Inc. Diaphragm valve with reliability enhancements for atomic layer deposition
DE10328660B3 (de) 2003-06-26 2004-12-02 Infineon Technologies Ag Verfahren zum Bestimmen der Temperatur eines Halbleiterwafers
KR20050001793A (ko) 2003-06-26 2005-01-07 삼성전자주식회사 단원자층 증착 공정의 실시간 분석 방법
US20100129548A1 (en) 2003-06-27 2010-05-27 Sundew Technologies, Llc Ald apparatus and method
US7662233B2 (en) 2003-06-27 2010-02-16 Ofer Sneh ALD apparatus and method
US9725805B2 (en) 2003-06-27 2017-08-08 Spts Technologies Limited Apparatus and method for controlled application of reactive vapors to produce thin films and coatings
US7833580B2 (en) 2003-07-04 2010-11-16 Samsung Electronics Co., Ltd. Method of forming a carbon nano-material layer using a cyclic deposition technique
US7547363B2 (en) 2003-07-08 2009-06-16 Tosoh Finechem Corporation Solid organometallic compound-filled container and filling method thereof
US20070012402A1 (en) 2003-07-08 2007-01-18 Sundew Technologies, Llc Apparatus and method for downstream pressure control and sub-atmospheric reactive gas abatement
KR100512180B1 (ko) 2003-07-10 2005-09-02 삼성전자주식회사 자기 랜덤 엑세스 메모리 소자의 자기 터널 접합 및 그의형성방법
US7055875B2 (en) 2003-07-11 2006-06-06 Asyst Technologies, Inc. Ultra low contact area end effector
KR100541050B1 (ko) 2003-07-22 2006-01-11 삼성전자주식회사 가스공급장치 및 이를 이용한 반도체소자 제조설비
US6909839B2 (en) 2003-07-23 2005-06-21 Advanced Technology Materials, Inc. Delivery systems for efficient vaporization of precursor source material
JP4298421B2 (ja) 2003-07-23 2009-07-22 エスペック株式会社 サーマルプレートおよび試験装置
WO2005010946A2 (en) 2003-07-23 2005-02-03 Asm America, Inc. DEPOSITION OF SiGe ON SILICON-ON-INSULATOR STRUCTURES AND BULK SUBSTRATES
KR100527672B1 (ko) 2003-07-25 2005-11-28 삼성전자주식회사 서셉터 및 이를 포함하는 증착 장치
EP1697727B1 (en) 2003-07-25 2007-10-03 Lightwind Corporation Method and apparatus for monitoring chemical processes
US7122481B2 (en) 2003-07-25 2006-10-17 Intel Corporation Sealing porous dielectrics with silane coupling reagents
US7399388B2 (en) 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US20050019960A1 (en) 2003-07-25 2005-01-27 Moon-Sook Lee Method and apparatus for forming a ferroelectric layer
US7361447B2 (en) 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
TWI310850B (en) 2003-08-01 2009-06-11 Foxsemicon Integrated Tech Inc Substrate supporting rod and substrate cassette using the same
EP1652226A2 (en) 2003-08-04 2006-05-03 ASM America, Inc. Surface preparation prior to deposition on germanium
US7695692B2 (en) 2003-08-06 2010-04-13 Sanderson William D Apparatus and method for producing chlorine dioxide
WO2005015613A2 (en) 2003-08-07 2005-02-17 Sundew Technologies, Llc Perimeter partition-valve with protected seals
US20050037578A1 (en) 2003-08-14 2005-02-17 Wei Wen Chen [method for forming an oxide/ nitride/oxide stacked layer]
KR100536604B1 (ko) 2003-08-14 2005-12-14 삼성전자주식회사 고밀도 플라즈마 증착법을 이용한 갭필 방법
US6967305B2 (en) 2003-08-18 2005-11-22 Mks Instruments, Inc. Control of plasma transitions in sputter processing systems
JP2005072405A (ja) 2003-08-27 2005-03-17 Sony Corp 薄膜の形成方法および半導体装置の製造方法
US7422635B2 (en) 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US8152922B2 (en) 2003-08-29 2012-04-10 Asm America, Inc. Gas mixer and manifold assembly for ALD reactor
JP3881973B2 (ja) 2003-08-29 2007-02-14 三菱重工業株式会社 窒化シリコン膜の成膜方法
WO2005024928A1 (ja) 2003-09-03 2005-03-17 Tokyo Electron Limited ガス処理装置および放熱方法
JP4235066B2 (ja) 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
US7179758B2 (en) 2003-09-03 2007-02-20 International Business Machines Corporation Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics
JP4563729B2 (ja) 2003-09-04 2010-10-13 東京エレクトロン株式会社 プラズマ処理装置
US7335277B2 (en) 2003-09-08 2008-02-26 Hitachi High-Technologies Corporation Vacuum processing apparatus
US7235482B2 (en) 2003-09-08 2007-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology
US6921711B2 (en) 2003-09-09 2005-07-26 International Business Machines Corporation Method for forming metal replacement gate of high performance
KR100551138B1 (ko) 2003-09-09 2006-02-10 어댑티브프라즈마테크놀로지 주식회사 균일한 플라즈마 발생을 위한 적응형 플라즈마 소스
US7414281B1 (en) 2003-09-09 2008-08-19 Spansion Llc Flash memory with high-K dielectric material between substrate and gate
US7132201B2 (en) 2003-09-12 2006-11-07 Micron Technology, Inc. Transparent amorphous carbon structure in semiconductor devices
WO2005028973A2 (en) 2003-09-17 2005-03-31 Sionex Corporation Solid-state flow generator and related systems, applications, and methods
US7056806B2 (en) 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
KR100938534B1 (ko) 2003-09-19 2010-01-25 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US6911399B2 (en) 2003-09-19 2005-06-28 Applied Materials, Inc. Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
JP4356410B2 (ja) 2003-09-22 2009-11-04 株式会社日立製作所 化学物質探知装置及び化学物質探知方法
US20070137794A1 (en) 2003-09-24 2007-06-21 Aviza Technology, Inc. Thermal processing system with across-flow liner
US20050098107A1 (en) 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
JP4524554B2 (ja) 2003-09-25 2010-08-18 信越化学工業株式会社 γ，δ−不飽和カルボン酸及びそのシリルエステルの製造方法、カルボキシル基を有する有機ケイ素化合物及びその製造方法
US20050121145A1 (en) 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
US7156380B2 (en) 2003-09-29 2007-01-02 Asm International, N.V. Safe liquid source containers
US6825106B1 (en) 2003-09-30 2004-11-30 Sharp Laboratories Of America, Inc. Method of depositing a conductive niobium monoxide film for MOSFET gates
US20050069651A1 (en) 2003-09-30 2005-03-31 Tokyo Electron Limited Plasma processing system
US6875677B1 (en) 2003-09-30 2005-04-05 Sharp Laboratories Of America, Inc. Method to control the interfacial layer for deposition of high dielectric constant films
US7205247B2 (en) 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric
US6982046B2 (en) 2003-10-01 2006-01-03 General Electric Company Light sources with nanometer-sized VUV radiation-absorbing phosphors
US7052757B2 (en) 2003-10-03 2006-05-30 Hewlett-Packard Development Company, L.P. Capping layer for enhanced performance media
US7408225B2 (en) 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
US7166528B2 (en) 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US8501594B2 (en) 2003-10-10 2013-08-06 Applied Materials, Inc. Methods for forming silicon germanium layers
JP4274017B2 (ja) 2003-10-15 2009-06-03 株式会社島津製作所 成膜装置
US7647886B2 (en) 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US6974781B2 (en) 2003-10-20 2005-12-13 Asm International N.V. Reactor precoating for reduced stress and uniform CVD
JP2005123532A (ja) 2003-10-20 2005-05-12 Tokyo Electron Ltd 成膜装置及び成膜方法
US7094613B2 (en) 2003-10-21 2006-08-22 Applied Materials, Inc. Method for controlling accuracy and repeatability of an etch process
KR100587669B1 (ko) 2003-10-29 2006-06-08 삼성전자주식회사 반도체 장치에서의 저항 소자 형성방법.
US20050092439A1 (en) 2003-10-29 2005-05-05 Keeton Tony J. Low/high temperature substrate holder to reduce edge rolloff and backside damage
US7020981B2 (en) 2003-10-29 2006-04-04 Asm America, Inc Reaction system for growing a thin film
US7108753B2 (en) 2003-10-29 2006-09-19 Asm America, Inc. Staggered ribs on process chamber to reduce thermal effects
US20050095859A1 (en) 2003-11-03 2005-05-05 Applied Materials, Inc. Precursor delivery system with rate control
US20050101843A1 (en) 2003-11-06 2005-05-12 Welch Allyn, Inc. Wireless disposable physiological sensor
US7329947B2 (en) 2003-11-07 2008-02-12 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor substrate
US8313277B2 (en) 2003-11-10 2012-11-20 Brooks Automation, Inc. Semiconductor manufacturing process modules
US7071118B2 (en) 2003-11-12 2006-07-04 Veeco Instruments, Inc. Method and apparatus for fabricating a conformal thin film on a substrate
US20050153571A1 (en) 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
US7494941B2 (en) 2003-11-20 2009-02-24 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device, and substrate processing apparatus
KR100550641B1 (ko) 2003-11-22 2006-02-09 주식회사 하이닉스반도체 산화하프늄과 산화알루미늄이 혼합된 유전막 및 그 제조방법
US7055263B2 (en) 2003-11-25 2006-06-06 Air Products And Chemicals, Inc. Method for cleaning deposition chambers for high dielectric constant materials
KR20050053417A (ko) 2003-12-02 2005-06-08 한국전자통신연구원 래디칼 보조 산화 장치
JP4725085B2 (ja) 2003-12-04 2011-07-13 株式会社豊田中央研究所 非晶質炭素、非晶質炭素被膜部材および非晶質炭素膜の成膜方法
US20050120805A1 (en) 2003-12-04 2005-06-09 John Lane Method and apparatus for substrate temperature control
KR20050054122A (ko) 2003-12-04 2005-06-10 성명모 자외선 원자층 증착법을 이용한 박막 제조 방법
US7431966B2 (en) 2003-12-09 2008-10-07 Micron Technology, Inc. Atomic layer deposition method of depositing an oxide on a substrate
US7143897B1 (en) 2003-12-09 2006-12-05 H20 International, Inc. Water filter
JP2005172489A (ja) 2003-12-09 2005-06-30 Tokyo Yogyo Co Ltd 溶湯用測温プローブ
KR100519798B1 (ko) 2003-12-11 2005-10-10 삼성전자주식회사 향상된 생산성을 갖는 박막 형성 방법
US7301623B1 (en) 2003-12-16 2007-11-27 Nanometrics Incorporated Transferring, buffering and measuring a substrate in a metrology system
US7220497B2 (en) 2003-12-18 2007-05-22 Lam Research Corporation Yttria-coated ceramic components of semiconductor material processing apparatuses and methods of manufacturing the components
US7569193B2 (en) 2003-12-19 2009-08-04 Applied Materials, Inc. Apparatus and method for controlled combustion of gaseous pollutants
US20050133166A1 (en) 2003-12-19 2005-06-23 Applied Materials, Inc. Tuned potential pedestal for mask etch processing apparatus
CN1898412A (zh) 2003-12-22 2007-01-17 山高刀具公司 用于涂覆切削刀具的载体和方法
US7662689B2 (en) 2003-12-23 2010-02-16 Intel Corporation Strained transistor integration for CMOS
US7645341B2 (en) 2003-12-23 2010-01-12 Lam Research Corporation Showerhead electrode assembly for plasma processing apparatuses
US20050148162A1 (en) 2004-01-02 2005-07-07 Huajie Chen Method of preventing surface roughening during hydrogen pre-bake of SiGe substrates using chlorine containing gases
KR100620673B1 (ko) 2004-01-05 2006-09-13 주식회사 하이닉스반도체 포토레지스트 세정액 조성물 및 이를 이용한 패턴 형성 방법
KR100593960B1 (ko) 2004-01-09 2006-06-30 병호 최 광원자층 증착장치 및 증착방법
US7892357B2 (en) 2004-01-12 2011-02-22 Axcelis Technologies, Inc. Gas distribution plate assembly for plasma reactors
JP4583764B2 (ja) 2004-01-14 2010-11-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR100549273B1 (ko) 2004-01-15 2006-02-03 주식회사 테라세미콘 반도체 제조장치의 기판홀더
USD535673S1 (en) 2004-01-16 2007-01-23 Thermal Dynamics Corporation Gas distributor for a plasma arc torch
JP4513329B2 (ja) 2004-01-16 2010-07-28 東京エレクトロン株式会社 処理装置
US7071051B1 (en) 2004-01-20 2006-07-04 Advanced Micro Devices, Inc. Method for forming a thin, high quality buffer layer in a field effect transistor and related structure
WO2005071723A1 (ja) 2004-01-21 2005-08-04 Hitachi Kokusai Electric Inc. 半導体装置の製造方法および基板処理装置
US7005227B2 (en) 2004-01-21 2006-02-28 Intel Corporation One component EUV photoresist
US7128570B2 (en) 2004-01-21 2006-10-31 Asm International N.V. Method and apparatus for purging seals in a thermal reactor
US7354847B2 (en) 2004-01-26 2008-04-08 Taiwan Semiconductor Manufacturing Company Method of trimming technology
US20050164469A1 (en) 2004-01-28 2005-07-28 Infineon Technologies North America Corp. Method for N+ doping of amorphous silicon and polysilicon electrodes in deep trenches
JP4722501B2 (ja) 2004-01-29 2011-07-13 三星電子株式会社 半導体素子の多層誘電体構造物、半導体及びその製造方法
JP4833859B2 (ja) 2004-01-30 2011-12-07 東京エレクトロン株式会社 流体用ギャップを有する基板ホルダとこの基板ホルダの製造方法
US7163393B2 (en) 2004-02-02 2007-01-16 Sumitomo Mitsubishi Silicon Corporation Heat treatment jig for semiconductor silicon substrate
DE102004005385A1 (de) 2004-02-03 2005-10-20 Infineon Technologies Ag Verwendung von gelösten Hafniumalkoxiden bzw. Zirkoniumalkoxiden als Precursoren für Hafniumoxid- und Hafniumoxynitridschichten bzw. Zirkoniumoxid- und Zirkoniumoxynitridschichten
JP4364667B2 (ja) 2004-02-13 2009-11-18 東京エレクトロン株式会社 溶射部材、電極、およびプラズマ処理装置
US20050229849A1 (en) 2004-02-13 2005-10-20 Applied Materials, Inc. High productivity plasma processing chamber
KR101112029B1 (ko) 2004-02-13 2012-03-21 에이에스엠 아메리카, 인코포레이티드 자동 도핑 및 후면 증착의 감소를 위한 기판 지지 시스템
US20050181535A1 (en) 2004-02-17 2005-08-18 Yun Sun J. Method of fabricating passivation layer for organic devices
TWI263709B (en) 2004-02-17 2006-10-11 Ind Tech Res Inst Structure of strain relaxed thin Si/Ge epitaxial layer and fabricating method thereof
US20050178333A1 (en) 2004-02-18 2005-08-18 Asm Japan K.K. System and method of CVD chamber cleaning
US7088003B2 (en) 2004-02-19 2006-08-08 International Business Machines Corporation Structures and methods for integration of ultralow-k dielectrics with improved reliability
US20050187647A1 (en) 2004-02-19 2005-08-25 Kuo-Hua Wang Intelligent full automation controlled flow for a semiconductor furnace tool
JP4698251B2 (ja) 2004-02-24 2011-06-08 アプライド マテリアルズ インコーポレイテッド 可動又は柔軟なシャワーヘッド取り付け
US20100297391A1 (en) 2004-02-25 2010-11-25 General Nanotechnoloy Llc Diamond capsules and methods of manufacture
US7958842B2 (en) 2004-02-27 2011-06-14 Hitachi Kokusai Electric Inc. Substrate processing apparatus
USD525127S1 (en) 2004-03-01 2006-07-18 Kraft Foods Holdings, Inc. Susceptor ring
US20050214458A1 (en) 2004-03-01 2005-09-29 Meiere Scott H Low zirconium hafnium halide compositions
US20060062910A1 (en) 2004-03-01 2006-03-23 Meiere Scott H Low zirconium, hafnium-containing compositions, processes for the preparation thereof and methods of use thereof
WO2005086331A2 (en) 2004-03-02 2005-09-15 Rosemount, Inc. Process device with improved power generation
US20050233477A1 (en) 2004-03-05 2005-10-20 Tokyo Electron Limited Substrate processing apparatus, substrate processing method, and program for implementing the method
US7098150B2 (en) 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
WO2005087974A2 (en) 2004-03-05 2005-09-22 Applied Materials, Inc. Cvd processes for the deposition of amorphous carbon films
CN100373545C (zh) 2004-03-05 2008-03-05 东京毅力科创株式会社 基板处理装置、基板处理方法及程序
JP4246654B2 (ja) 2004-03-08 2009-04-02 株式会社日立ハイテクノロジーズ 真空処理装置
EP2128673B1 (en) 2004-03-08 2013-01-09 ADC Telecommunications, Inc. Fiber access terminal
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
US7079740B2 (en) 2004-03-12 2006-07-18 Applied Materials, Inc. Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides
KR100538096B1 (ko) 2004-03-16 2005-12-21 삼성전자주식회사 원자층 증착 방법을 이용하는 커패시터 형성 방법
US7053010B2 (en) 2004-03-22 2006-05-30 Micron Technology, Inc. Methods of depositing silicon dioxide comprising layers in the fabrication of integrated circuitry, methods of forming trench isolation, and methods of forming arrays of memory cells
US7524735B1 (en) 2004-03-25 2009-04-28 Novellus Systems, Inc Flowable film dielectric gap fill process
US7074690B1 (en) 2004-03-25 2006-07-11 Novellus Systems, Inc. Selective gap-fill process
US7582555B1 (en) 2005-12-29 2009-09-01 Novellus Systems, Inc. CVD flowable gap fill
US20050214457A1 (en) 2004-03-29 2005-09-29 Applied Materials, Inc. Deposition of low dielectric constant films by N2O addition
KR20060060731A (ko) 2004-03-31 2006-06-05 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법
US20050221021A1 (en) 2004-03-31 2005-10-06 Tokyo Electron Limited Method and system for performing atomic layer deposition
US20050221618A1 (en) 2004-03-31 2005-10-06 Amrhein Frederick J System for controlling a plenum output flow geometry
CN1292092C (zh) 2004-04-01 2006-12-27 南昌大学 用于金属有机化学气相沉积设备的双层进气喷头
US7585371B2 (en) 2004-04-08 2009-09-08 Micron Technology, Inc. Substrate susceptors for receiving semiconductor substrates to be deposited upon
US20050227502A1 (en) 2004-04-12 2005-10-13 Applied Materials, Inc. Method for forming an ultra low dielectric film by forming an organosilicon matrix and large porogens as a template for increased porosity
US7273526B2 (en) 2004-04-15 2007-09-25 Asm Japan K.K. Thin-film deposition apparatus
US20060019502A1 (en) 2004-07-23 2006-01-26 Park Beom S Method of controlling the film properties of a CVD-deposited silicon nitride film
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US8083853B2 (en) 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7018941B2 (en) 2004-04-21 2006-03-28 Applied Materials, Inc. Post treatment of low k dielectric films
JP4317871B2 (ja) 2004-04-21 2009-08-19 株式会社日立国際電気 熱処理装置
USD553104S1 (en) 2004-04-21 2007-10-16 Tokyo Electron Limited Absorption board for an electric chuck used in semiconductor manufacture
US20050238807A1 (en) 2004-04-27 2005-10-27 Applied Materials, Inc. Refurbishment of a coated chamber component
WO2005106450A1 (en) 2004-04-28 2005-11-10 Sionex Corporation System and method for ion species analysis with enhanced condition control and data interpretation using differential mobility spectrometers
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7712434B2 (en) 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
DE602005027196D1 (de) 2004-04-30 2011-05-12 Dichroic Cell S R L Verfahren zur herstellung von virtuellen ge-substraten zur iii/v-integration auf si(001)
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7049247B2 (en) 2004-05-03 2006-05-23 International Business Machines Corporation Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made
US6982208B2 (en) 2004-05-03 2006-01-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method for producing high throughput strained-Si channel MOSFETS
JP2005322668A (ja) 2004-05-06 2005-11-17 Renesas Technology Corp 成膜装置および成膜方法
US7109114B2 (en) 2004-05-07 2006-09-19 Applied Materials, Inc. HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance
US7202148B2 (en) 2004-05-10 2007-04-10 Taiwan Semiconductor Manufacturing Company Method utilizing compensation features in semiconductor processing
US20050252447A1 (en) 2004-05-11 2005-11-17 Applied Materials, Inc. Gas blocker plate for improved deposition
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
WO2005109486A1 (en) 2004-05-12 2005-11-17 Viatron Technologies Inc. System for heat treatment of semiconductor device
US8074599B2 (en) 2004-05-12 2011-12-13 Applied Materials, Inc. Plasma uniformity control by gas diffuser curvature
US8328939B2 (en) 2004-05-12 2012-12-11 Applied Materials, Inc. Diffuser plate with slit valve compensation
US7748138B2 (en) 2004-05-13 2010-07-06 Tokyo Electron Limited Particle removal method for a substrate transfer mechanism and apparatus
JP5042820B2 (ja) 2004-05-14 2012-10-03 ベクトン・ディキンソン・アンド・カンパニー 生物活性表面を有する物品およびそれらの無溶媒調製法
KR100889437B1 (ko) 2004-05-18 2009-03-24 가부시키가이샤 섬코 기상 성장 장치용 서셉터
KR100469132B1 (ko) 2004-05-18 2005-01-29 주식회사 아이피에스 주기적 펄스 두 단계 플라즈마 원자층 증착장치 및 방법
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20060019033A1 (en) 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
JP2005340251A (ja) 2004-05-24 2005-12-08 Shin Etsu Chem Co Ltd プラズマ処理装置用のシャワープレート及びプラズマ処理装置
US7271093B2 (en) 2004-05-24 2007-09-18 Asm Japan K.K. Low-carbon-doped silicon oxide film and damascene structure using same
US7396746B2 (en) 2004-05-24 2008-07-08 Varian Semiconductor Equipment Associates, Inc. Methods for stable and repeatable ion implantation
US20050266173A1 (en) 2004-05-26 2005-12-01 Tokyo Electron Limited Method and apparatus of distributed plasma processing system for conformal ion stimulated nanoscale deposition process
US7622005B2 (en) 2004-05-26 2009-11-24 Applied Materials, Inc. Uniformity control for low flow process and chamber to chamber matching
US7229502B2 (en) 2004-05-27 2007-06-12 Macronix International Co., Ltd. Method of forming a silicon nitride layer
JP3972126B2 (ja) 2004-05-28 2007-09-05 独立行政法人産業技術総合研究所 紫外線発生源、紫外線照射処理装置及び半導体製造装置
US7580388B2 (en) 2004-06-01 2009-08-25 Lg Electronics Inc. Method and apparatus for providing enhanced messages on common control channel in wireless communication system
JP4503356B2 (ja) 2004-06-02 2010-07-14 東京エレクトロン株式会社 基板処理方法および半導体装置の製造方法
US7699932B2 (en) 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7651583B2 (en) 2004-06-04 2010-01-26 Tokyo Electron Limited Processing system and method for treating a substrate
US7037794B2 (en) 2004-06-09 2006-05-02 International Business Machines Corporation Raised STI process for multiple gate ox and sidewall protection on strained Si/SGOI structure with elevated source/drain
US7132360B2 (en) 2004-06-10 2006-11-07 Freescale Semiconductor, Inc. Method for treating a semiconductor surface to form a metal-containing layer
KR100589062B1 (ko) 2004-06-10 2006-06-12 삼성전자주식회사 원자층 적층 방식의 박막 형성방법 및 이를 이용한 반도체소자의 커패시터 형성방법
ATE446471T1 (de) 2004-06-10 2009-11-15 Humanscale Corp Mechanismus für die positionsverstellung einer angebrachten vorrichtung
US7396743B2 (en) 2004-06-10 2008-07-08 Singh Kaushal K Low temperature epitaxial growth of silicon-containing films using UV radiation
JP4565897B2 (ja) 2004-06-14 2010-10-20 株式会社Ａｄｅｋａ 薄膜形成用原料及び薄膜の製造方法
GB0413554D0 (en) 2004-06-17 2004-07-21 Point 35 Microstructures Ltd Improved method and apparartus for the etching of microstructures
US7399570B2 (en) 2004-06-18 2008-07-15 Hynix Semiconductor Inc. Water-soluble negative photoresist polymer and composition containing the same
US7446335B2 (en) 2004-06-18 2008-11-04 Regents Of The University Of Minnesota Process and apparatus for forming nanoparticles using radiofrequency plasmas
JP4534619B2 (ja) 2004-06-21 2010-09-01 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具
US7951262B2 (en) 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
TWI574318B (zh) 2004-06-21 2017-03-11 Tokyo Electron Ltd A plasma processing apparatus, a plasma processing method, and a computer-readable recording medium
KR20050121426A (ko) 2004-06-22 2005-12-27 삼성에스디아이 주식회사 탄소나노튜브 제조용 촉매의 제조 방법
US20050282350A1 (en) 2004-06-22 2005-12-22 You-Hua Chou Atomic layer deposition for filling a gap between devices
US20050284573A1 (en) 2004-06-24 2005-12-29 Egley Fred D Bare aluminum baffles for resist stripping chambers
US7244958B2 (en) 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
US7073834B2 (en) 2004-06-25 2006-07-11 Applied Materials, Inc. Multiple section end effector assembly
US20050285208A1 (en) 2004-06-25 2005-12-29 Chi Ren Metal gate electrode for semiconductor devices
EP1771598B1 (en) 2004-06-28 2009-09-30 Cambridge Nanotech Inc. Atomic layer deposition (ald) system and method
US20060006538A1 (en) 2004-07-02 2006-01-12 Lsi Logic Corporation Extreme low-K interconnect structure and method
KR100614801B1 (ko) 2004-07-05 2006-08-22 삼성전자주식회사 반도체 장치의 막 형성방법
US7363195B2 (en) 2004-07-07 2008-04-22 Sensarray Corporation Methods of configuring a sensor network
JP5054517B2 (ja) 2004-07-09 2012-10-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 反射器を備えるｕｖｃ／ｖｕｖ誘電体バリア放電ランプ
US7422653B2 (en) 2004-07-13 2008-09-09 Applied Materials, Inc. Single-sided inflatable vertical slit valve
JP4559427B2 (ja) 2004-07-13 2010-10-06 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US7094442B2 (en) 2004-07-13 2006-08-22 Applied Materials, Inc. Methods for the reduction and elimination of particulate contamination with CVD of amorphous carbon
JP4674061B2 (ja) 2004-07-14 2011-04-20 株式会社アルバック 薄膜形成方法
US7409263B2 (en) 2004-07-14 2008-08-05 Applied Materials, Inc. Methods and apparatus for repositioning support for a substrate carrier
KR100578819B1 (ko) 2004-07-15 2006-05-11 삼성전자주식회사 원자층 적층 방법과 이를 이용한 게이트 구조물의 제조방법 및 커패시터의 제조 방법
US7241686B2 (en) 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
US20060016783A1 (en) 2004-07-22 2006-01-26 Dingjun Wu Process for titanium nitride removal
JP4179311B2 (ja) 2004-07-28 2008-11-12 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
US20060021703A1 (en) 2004-07-29 2006-02-02 Applied Materials, Inc. Dual gas faceplate for a showerhead in a semiconductor wafer processing system
PL1771599T3 (pl) 2004-07-30 2008-04-30 Lpe Spa Reaktor epitaksjalny z kontrolowaną pozycją podstawy
US20060021572A1 (en) 2004-07-30 2006-02-02 Colorado School Of Mines High Vacuum Plasma-Assisted Chemical Vapor Deposition System
US7689687B2 (en) 2004-07-30 2010-03-30 Fisher-Rosemount Systems, Inc. Communication controller with automatic time stamping
JP4417197B2 (ja) 2004-07-30 2010-02-17 住友大阪セメント株式会社 サセプタ装置
KR100689401B1 (ko) 2004-07-30 2007-03-08 주식회사 하이닉스반도체 포토레지스트 중합체 및 이를 함유하는 포토레지스트 조성물
US7601649B2 (en) 2004-08-02 2009-10-13 Micron Technology, Inc. Zirconium-doped tantalum oxide films
US20090011150A1 (en) 2004-08-04 2009-01-08 Hyeong-Tag Jeon Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias
JP4718141B2 (ja) 2004-08-06 2011-07-06 東京エレクトロン株式会社 薄膜形成方法及び薄膜形成装置
US7470633B2 (en) 2004-08-09 2008-12-30 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7504344B2 (en) 2004-08-09 2009-03-17 Asm Japan K.K. Method of forming a carbon polymer film using plasma CVD
US7955646B2 (en) 2004-08-09 2011-06-07 Applied Materials, Inc. Elimination of flow and pressure gradients in low utilization processes
KR101114219B1 (ko) 2004-08-09 2012-03-05 주성엔지니어링(주) 광원을 포함하는 원자층 증착장치 및 이를 이용한 증착방법
TW200625431A (en) 2004-08-16 2006-07-16 Aviza Tech Inc Direct liquid injection system and method for forming multi-component dielectric films
JP2006059931A (ja) 2004-08-18 2006-03-02 Canon Anelva Corp 急速加熱処理装置
US20060040054A1 (en) 2004-08-18 2006-02-23 Pearlstein Ronald M Passivating ALD reactor chamber internal surfaces to prevent residue buildup
US7119032B2 (en) 2004-08-23 2006-10-10 Air Products And Chemicals, Inc. Method to protect internal components of semiconductor processing equipment using layered superlattice materials
JP4348542B2 (ja) 2004-08-24 2009-10-21 信越半導体株式会社 石英治具及び半導体製造装置
USD524600S1 (en) 2004-08-26 2006-07-11 Maytag Corporation Convection cover for cooking appliance
KR101071136B1 (ko) 2004-08-27 2011-10-10 엘지디스플레이 주식회사 평판표시장치의 제조를 위한 기판의 박막처리장치
ITMI20041677A1 (it) 2004-08-30 2004-11-30 E T C Epitaxial Technology Ct Processo di pulitura e processo operativo per un reattore cvd.
DE102004042431B4 (de) 2004-08-31 2008-07-03 Schott Ag Verfahren und Vorrichtung zur Plasmabeschichtung von Werkstücken mit spektraler Auswertung der Prozessparameter und Verwendung der Vorrichtung
US8158488B2 (en) 2004-08-31 2012-04-17 Micron Technology, Inc. Method of increasing deposition rate of silicon dioxide on a catalyst
US7910288B2 (en) 2004-09-01 2011-03-22 Micron Technology, Inc. Mask material conversion
US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
JP2006108629A (ja) 2004-09-10 2006-04-20 Toshiba Corp 半導体装置の製造方法
US20060137609A1 (en) 2004-09-13 2006-06-29 Puchacz Jerzy P Multi-single wafer processing apparatus
US7582891B2 (en) 2004-09-16 2009-09-01 Arizona Board Of Regents, A Corporate Body Organized Under Arizona Law, Acting On Behalf Of Arizona State University Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
US20060060930A1 (en) 2004-09-17 2006-03-23 Metz Matthew V Atomic layer deposition of high dielectric constant gate dielectrics
US8084400B2 (en) 2005-10-11 2011-12-27 Intermolecular, Inc. Methods for discretized processing and process sequence integration of regions of a substrate
US8882914B2 (en) 2004-09-17 2014-11-11 Intermolecular, Inc. Processing substrates using site-isolated processing
JP4698190B2 (ja) 2004-09-22 2011-06-08 川惣電機工業株式会社 測温装置
JP4572100B2 (ja) 2004-09-28 2010-10-27 日本エー・エス・エム株式会社 プラズマ処理装置
JP2006097044A (ja) 2004-09-28 2006-04-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude 成膜用前駆体、ルテニウム含有膜の成膜方法、ルテニウム膜の成膜方法、ルテニウム酸化物膜の成膜方法およびルテニウム酸塩膜の成膜方法
US7806587B2 (en) 2004-09-29 2010-10-05 Citizen Holdings Co., Ltd. Electronic clinical thermometer and method of producing the same
DE102005045081B4 (de) 2004-09-29 2011-07-07 Covalent Materials Corp. Suszeptor
JP2006124831A (ja) 2004-09-30 2006-05-18 Nichias Corp 気相成長用反応容器及び気相成長方法
US7241475B2 (en) 2004-09-30 2007-07-10 The Aerospace Corporation Method for producing carbon surface films by plasma exposure of a carbide compound
US7361958B2 (en) 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US7189431B2 (en) 2004-09-30 2007-03-13 Tokyo Electron Limited Method for forming a passivated metal layer
JP2006124832A (ja) 2004-09-30 2006-05-18 Nichias Corp 気相成長装置及び気相成長法
US6874247B1 (en) 2004-10-12 2005-04-05 Tsang-Hung Hsu Toothbrush dryer
US20060257563A1 (en) 2004-10-13 2006-11-16 Seok-Joo Doh Method of fabricating silicon-doped metal oxide layer using atomic layer deposition technique
US7674726B2 (en) 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US20060099782A1 (en) 2004-10-15 2006-05-11 Massachusetts Institute Of Technology Method for forming an interface between germanium and other materials
US7427571B2 (en) 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
JP4453984B2 (ja) 2004-10-19 2010-04-21 キヤノンアネルバ株式会社 基板支持・搬送用トレイ
US7790633B1 (en) 2004-10-26 2010-09-07 Novellus Systems, Inc. Sequential deposition/anneal film densification method
JP2006128188A (ja) 2004-10-26 2006-05-18 Nikon Corp 基板搬送装置、基板搬送方法および露光装置
KR100754386B1 (ko) 2004-10-28 2007-08-31 삼성전자주식회사 양방향 화학기상증착 시스템 및 이를 이용한 펄스형 공정진행 방법
US7163900B2 (en) 2004-11-01 2007-01-16 Infineon Technologies Ag Using polydentate ligands for sealing pores in low-k dielectrics
US7189626B2 (en) 2004-11-03 2007-03-13 Micron Technology, Inc. Electroless plating of metal caps for chalcogenide-based memory devices
US7727880B1 (en) 2004-11-03 2010-06-01 Novellus Systems, Inc. Protective self-aligned buffer layers for damascene interconnects
US20060093756A1 (en) 2004-11-03 2006-05-04 Nagarajan Rajagopalan High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
JP2006135161A (ja) 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
KR100728962B1 (ko) 2004-11-08 2007-06-15 주식회사 하이닉스반도체 지르코늄산화막을 갖는 반도체소자의 캐패시터 및 그 제조방법
JP4435666B2 (ja) 2004-11-09 2010-03-24 東京エレクトロン株式会社 プラズマ処理方法、成膜方法
KR100742276B1 (ko) 2004-11-10 2007-07-24 삼성전자주식회사 저유전율 유전막을 제거하기 위한 식각 용액 및 이를이용한 저유전율 유전막 식각 방법
KR100782369B1 (ko) 2004-11-11 2007-12-07 삼성전자주식회사 반도체 제조장치
US7678682B2 (en) 2004-11-12 2010-03-16 Axcelis Technologies, Inc. Ultraviolet assisted pore sealing of porous low k dielectric films
US7428958B2 (en) 2004-11-15 2008-09-30 Nikon Corporation Substrate conveyor apparatus, substrate conveyance method and exposure apparatus
US7242055B2 (en) 2004-11-15 2007-07-10 International Business Machines Corporation Nitrogen-containing field effect transistor gate stack containing a threshold voltage control layer formed via deposition of a metal oxide
TWI393170B (zh) 2004-11-18 2013-04-11 尼康股份有限公司 A position measuring method, a position control method, a measuring method, a loading method, an exposure method, an exposure apparatus, and a device manufacturing method
KR100773755B1 (ko) 2004-11-18 2007-11-09 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US20060107898A1 (en) 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
US20070134821A1 (en) 2004-11-22 2007-06-14 Randhir Thakur Cluster tool for advanced front-end processing
KR20070089197A (ko) 2004-11-22 2007-08-30 어플라이드 머티어리얼스, 인코포레이티드 배치 처리 챔버를 사용한 기판 처리 기기
CN100573803C (zh) 2004-11-24 2009-12-23 Oc欧瑞康巴尔斯公司 用于非常大面积基片的真空处理室
US20060108221A1 (en) 2004-11-24 2006-05-25 William Goodwin Method and apparatus for improving measuring accuracy in gas monitoring systems
US8435351B2 (en) 2004-11-29 2013-05-07 Tokyo Electron Limited Method and system for measuring a flow rate in a solid precursor delivery system
US20060113806A1 (en) 2004-11-29 2006-06-01 Asm Japan K.K. Wafer transfer mechanism
JP4646752B2 (ja) 2004-11-29 2011-03-09 株式会社神戸製鋼所 高配向ダイヤモンド膜及びその製造方法並びに高配向ダイヤモンド膜を備えた電子デバイス
JP4512098B2 (ja) 2004-11-29 2010-07-28 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US7722737B2 (en) 2004-11-29 2010-05-25 Applied Materials, Inc. Gas distribution system for improved transient phase deposition
JP2006153706A (ja) 2004-11-30 2006-06-15 Taiyo Nippon Sanso Corp 測温体および気相成長装置
JP4830290B2 (ja) 2004-11-30 2011-12-07 信越半導体株式会社 直接接合ウェーハの製造方法
US20060113675A1 (en) 2004-12-01 2006-06-01 Chung-Liang Chang Barrier material and process for Cu interconnect
US20060118240A1 (en) 2004-12-03 2006-06-08 Applied Science And Technology, Inc. Methods and apparatus for downstream dissociation of gases
US7368377B2 (en) 2004-12-09 2008-05-06 Interuniversitair Microelektronica Centrum (Imec) Vzw Method for selective deposition of a thin self-assembled monolayer
US7271463B2 (en) 2004-12-10 2007-09-18 Micron Technology, Inc. Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
US20060127067A1 (en) 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof
KR100558922B1 (ko) 2004-12-16 2006-03-10 (주)퓨전에이드 박막 증착장치 및 방법
US7290813B2 (en) 2004-12-16 2007-11-06 Asyst Technologies, Inc. Active edge grip rest pad
US7396732B2 (en) 2004-12-17 2008-07-08 Interuniversitair Microelektronica Centrum Vzw (Imec) Formation of deep trench airgaps and related applications
US20060133955A1 (en) 2004-12-17 2006-06-22 Peters David W Apparatus and method for delivering vapor phase reagent to a deposition chamber
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US20060130767A1 (en) 2004-12-22 2006-06-22 Applied Materials, Inc. Purged vacuum chuck with proximity pins
JP4560681B2 (ja) 2004-12-24 2010-10-13 ミネベア株式会社 多灯式放電灯点灯装置
DE102004063036A1 (de) 2004-12-28 2006-07-06 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Ausbilden von Kontaktflecken
KR20060076714A (ko) 2004-12-28 2006-07-04 에이에스엠지니텍코리아 주식회사 원자층 증착기
US7809315B2 (en) 2004-12-28 2010-10-05 Bridgestone Corporation Transfer/transport conductive endless belt for a tandem system, method for producing same, and image forming apparatus employing same
JP2006186271A (ja) 2004-12-28 2006-07-13 Sharp Corp 気相成長装置および成膜済基板の製造方法
US20090104594A1 (en) 2004-12-29 2009-04-23 Biogen Idec Bioreactor Process Control System and Method
US20060144820A1 (en) 2004-12-30 2006-07-06 Sawin Herbert H Remote chamber methods for removing surface deposits
US7482247B1 (en) 2004-12-30 2009-01-27 Novellus Systems, Inc. Conformal nanolaminate dielectric deposition and etch bag gap fill process
WO2006073871A1 (en) 2004-12-30 2006-07-13 Applied Materials, Inc. Line edge roughness reduction compatible with trimming
US7846499B2 (en) 2004-12-30 2010-12-07 Asm International N.V. Method of pulsing vapor precursors in an ALD reactor
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
JP2006188729A (ja) 2005-01-05 2006-07-20 Hitachi Kokusai Electric Inc 基板処理装置
US7560395B2 (en) 2005-01-05 2009-07-14 Micron Technology, Inc. Atomic layer deposited hafnium tantalum oxide dielectrics
US7598516B2 (en) 2005-01-07 2009-10-06 International Business Machines Corporation Self-aligned process for nanotube/nanowire FETs
US7169668B2 (en) 2005-01-09 2007-01-30 United Microelectronics Corp. Method of manufacturing a split-gate flash memory device
KR101463581B1 (ko) 2005-01-18 2014-11-20 에이에스엠 아메리카, 인코포레이티드 박막 성장용 반응 시스템
JP2008533697A (ja) 2005-01-18 2008-08-21 エーエスエム アメリカ インコーポレイテッド ウェハ支持ピン部材
US20060156980A1 (en) 2005-01-19 2006-07-20 Samsung Electronics Co., Ltd. Apparatus including 4-way valve for fabricating semiconductor device, method of controlling valve, and method of fabricating semiconductor device using the apparatus
KR100725037B1 (ko) 2005-01-21 2007-06-07 세메스 주식회사 반도체 플라즈마 처리 장치 및 방법
US7964380B2 (en) 2005-01-21 2011-06-21 Argylia Technologies Nanoparticles for manipulation of biopolymers and methods of thereof
US20060162661A1 (en) 2005-01-22 2006-07-27 Applied Materials, Inc. Mixing energized and non-energized gases for silicon nitride deposition
JP2006203120A (ja) 2005-01-24 2006-08-03 Toshiba Corp 半導体装置の製造方法
KR100640550B1 (ko) 2005-01-26 2006-10-31 주식회사 아이피에스 플라즈마 ａｌｄ 박막증착방법
US7438949B2 (en) 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
US20060240187A1 (en) 2005-01-27 2006-10-26 Applied Materials, Inc. Deposition of an intermediate catalytic layer on a barrier layer for copper metallization
US20060162658A1 (en) 2005-01-27 2006-07-27 Applied Materials, Inc. Ruthenium layer deposition apparatus and method
US7235492B2 (en) 2005-01-31 2007-06-26 Applied Materials, Inc. Low temperature etchant for treatment of silicon-containing surfaces
JP5045432B2 (ja) 2005-01-31 2012-10-10 宇部興産株式会社 赤色蛍光体の製造方法および赤色蛍光体
US7298009B2 (en) 2005-02-01 2007-11-20 Infineon Technologies Ag Semiconductor method and device with mixed orientation substrate
US7135402B2 (en) 2005-02-01 2006-11-14 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing pores of low-k dielectrics using CxHy
US7816236B2 (en) 2005-02-04 2010-10-19 Asm America Inc. Selective deposition of silicon-containing films
KR100585178B1 (ko) 2005-02-05 2006-05-30 삼성전자주식회사 금속 게이트 전극을 가지는 ＦｉｎＦＥＴ을 포함하는반도체 소자 및 그 제조방법
US20060176928A1 (en) 2005-02-08 2006-08-10 Tokyo Electron Limited Substrate processing apparatus, control method adopted in substrate processing apparatus and program
US20060182885A1 (en) 2005-02-14 2006-08-17 Xinjian Lei Preparation of metal silicon nitride films via cyclic deposition
JP4734317B2 (ja) 2005-02-17 2011-07-27 株式会社日立国際電気 基板処理方法および基板処理装置
JP4546519B2 (ja) 2005-02-17 2010-09-15 株式会社日立国際電気 半導体デバイスの製造方法
WO2006091510A1 (en) 2005-02-22 2006-08-31 Asm America, Inc. Plasma pre-treating surfaces for atomic layer deposition
US20060185589A1 (en) 2005-02-23 2006-08-24 Raanan Zehavi Silicon gas injector and method of making
US7410340B2 (en) 2005-02-24 2008-08-12 Asyst Technologies, Inc. Direct tool loading
KR100667598B1 (ko) 2005-02-25 2007-01-12 주식회사 아이피에스 반도체 처리 장치
JP4764028B2 (ja) 2005-02-28 2011-08-31 株式会社日立ハイテクノロジーズ プラズマ処理方法
KR100854995B1 (ko) 2005-03-02 2008-08-28 삼성전자주식회사 고밀도 플라즈마 화학 기상 증착 장치
US8211235B2 (en) 2005-03-04 2012-07-03 Picosun Oy Apparatuses and methods for deposition of material on surfaces
US7629267B2 (en) 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US6972478B1 (en) 2005-03-07 2005-12-06 Advanced Micro Devices, Inc. Integrated circuit and method for its manufacture
JP4258518B2 (ja) 2005-03-09 2009-04-30 東京エレクトロン株式会社 成膜方法、成膜装置及び記憶媒体
JP4214124B2 (ja) 2005-03-14 2009-01-28 株式会社バイオエコーネット 耳式体温計
US7608549B2 (en) 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7211525B1 (en) 2005-03-16 2007-05-01 Novellus Systems, Inc. Hydrogen treatment enhanced gap fill
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
JP2006261434A (ja) 2005-03-17 2006-09-28 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude シリコン酸化膜の形成方法
US7314835B2 (en) 2005-03-21 2008-01-01 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
US8974868B2 (en) 2005-03-21 2015-03-10 Tokyo Electron Limited Post deposition plasma cleaning system and method
US20060211259A1 (en) 2005-03-21 2006-09-21 Maes Jan W Silicon oxide cap over high dielectric constant films
US8486845B2 (en) 2005-03-21 2013-07-16 Tokyo Electron Limited Plasma enhanced atomic layer deposition system and method
KR100669828B1 (ko) 2005-03-22 2007-01-16 성균관대학교산학협력단 중성빔을 이용한 원자층 증착장치 및 이 장치를 이용한원자층 증착방법
KR100655431B1 (ko) 2005-03-23 2006-12-11 삼성전자주식회사 웨이퍼와의 접촉 면적을 최소화할 수 있는 웨이퍼 캐리어 및 이를 이용한 웨이퍼 세정방법
US7422636B2 (en) 2005-03-25 2008-09-09 Tokyo Electron Limited Plasma enhanced atomic layer deposition system having reduced contamination
JP2006278058A (ja) 2005-03-28 2006-10-12 Matsushita Electric Works Ltd プラズマ処理装置
US20060213437A1 (en) 2005-03-28 2006-09-28 Tokyo Electron Limited Plasma enhanced atomic layer deposition system
JP4906714B2 (ja) 2005-03-29 2012-03-28 株式会社日立国際電気 基板処理装置、集中管理装置、基板処理装置の表示方法及び調整方法
US7282415B2 (en) 2005-03-29 2007-10-16 Freescale Semiconductor, Inc. Method for making a semiconductor device with strain enhancement
US7687409B2 (en) 2005-03-29 2010-03-30 Micron Technology, Inc. Atomic layer deposited titanium silicon oxide films
US20060226117A1 (en) 2005-03-29 2006-10-12 Bertram Ronald T Phase change based heating element system and method
US20060228898A1 (en) 2005-03-30 2006-10-12 Cory Wajda Method and system for forming a high-k dielectric layer
USD559994S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
USD559993S1 (en) 2005-03-30 2008-01-15 Tokyo Electron Limited Cover ring
US7993489B2 (en) 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
US8298336B2 (en) 2005-04-01 2012-10-30 Lam Research Corporation High strip rate downstream chamber
US7479198B2 (en) 2005-04-07 2009-01-20 Timothy D'Annunzio Methods for forming nanofiber adhesive structures
EP1866963A4 (en) 2005-04-07 2009-07-08 Aviza Tech Inc MULTICOMPOSING FILMS, MULTICOMPONENTS WITH A HIGH DIELECTRIC CONSTANT, AND METHODS OF DEPOSITING THESE FILMS
US20090017733A1 (en) 2005-04-19 2009-01-15 Ebara Corporation Substrate processing apparatus
KR100640640B1 (ko) 2005-04-19 2006-10-31 삼성전자주식회사 미세 피치의 하드마스크를 이용한 반도체 소자의 미세 패턴형성 방법
JP4694878B2 (ja) 2005-04-20 2011-06-08 Ｏｋｉセミコンダクタ株式会社 半導体製造装置および半導体装置の製造方法
CN101208444A (zh) 2005-04-21 2008-06-25 霍尼韦尔国际公司 钌基材料和钌合金
US7160819B2 (en) 2005-04-25 2007-01-09 Sharp Laboratories Of America, Inc. Method to perform selective atomic layer deposition of zinc oxide
US8137465B1 (en) 2005-04-26 2012-03-20 Novellus Systems, Inc. Single-chamber sequential curing of semiconductor wafers
US7544398B1 (en) 2005-04-26 2009-06-09 The Regents Of The Univesity Of California Controlled nano-doping of ultra thin films
WO2006114781A2 (en) 2005-04-26 2006-11-02 University College Cork - National University Of Ireland, Cork Deposition of materials
US7351057B2 (en) 2005-04-27 2008-04-01 Asm International N.V. Door plate for furnace
US7425350B2 (en) 2005-04-29 2008-09-16 Asm Japan K.K. Apparatus, precursors and deposition methods for silicon-containing materials
US7084060B1 (en) 2005-05-04 2006-08-01 International Business Machines Corporation Forming capping layer over metal wire structure using selective atomic layer deposition
US7169018B2 (en) 2005-05-04 2007-01-30 Micrel, Incorporated Wafer carrier checker and method of using same
US7915173B2 (en) 2005-05-05 2011-03-29 Macronix International Co., Ltd. Shallow trench isolation structure having reduced dislocation density
US7214630B1 (en) 2005-05-06 2007-05-08 Novellus Systems, Inc. PMOS transistor with compressive dielectric capping layer
US20060249175A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
KR100688836B1 (ko) 2005-05-11 2007-03-02 삼성에스디아이 주식회사 촉매 화학기상증착장치
JP4666473B2 (ja) 2005-05-12 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
US7875556B2 (en) 2005-05-16 2011-01-25 Air Products And Chemicals, Inc. Precursors for CVD silicon carbo-nitride and silicon nitride films
JP2006319261A (ja) 2005-05-16 2006-11-24 Dainippon Screen Mfg Co Ltd 基板処理装置
US7109098B1 (en) 2005-05-17 2006-09-19 Applied Materials, Inc. Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US20060260545A1 (en) 2005-05-17 2006-11-23 Kartik Ramaswamy Low temperature absorption layer deposition and high speed optical annealing system
US7101763B1 (en) 2005-05-17 2006-09-05 International Business Machines Corporation Low capacitance junction-isolation for bulk FinFET technology
US7422775B2 (en) 2005-05-17 2008-09-09 Applied Materials, Inc. Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing
US7312162B2 (en) 2005-05-17 2007-12-25 Applied Materials, Inc. Low temperature plasma deposition process for carbon layer deposition
KR100731164B1 (ko) 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
JP2006324551A (ja) 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
US20070155138A1 (en) 2005-05-24 2007-07-05 Pierre Tomasini Apparatus and method for depositing silicon germanium films
US8129290B2 (en) 2005-05-26 2012-03-06 Applied Materials, Inc. Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure
US8138104B2 (en) 2005-05-26 2012-03-20 Applied Materials, Inc. Method to increase silicon nitride tensile stress using nitrogen plasma in-situ treatment and ex-situ UV cure
US7732342B2 (en) 2005-05-26 2010-06-08 Applied Materials, Inc. Method to increase the compressive stress of PECVD silicon nitride films
US20060269690A1 (en) 2005-05-27 2006-11-30 Asm Japan K.K. Formation technology for nanoparticle films having low dielectric constant
US20090029564A1 (en) 2005-05-31 2009-01-29 Tokyo Electron Limited Plasma treatment apparatus and plasma treatment method
US20060275933A1 (en) 2005-06-02 2006-12-07 Applied Materials, Inc. Thermally conductive ceramic tipped contact thermocouple
US7608490B2 (en) 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100750968B1 (ko) 2005-06-07 2007-08-22 주식회사 알지비하이텍 플라즈마화학적기상증착 기구 내의 서셉터 구조
US20060281310A1 (en) 2005-06-08 2006-12-14 Applied Materials, Inc. Rotating substrate support and methods of use
EP1889287A1 (en) 2005-06-09 2008-02-20 Axcelis Technologies, Inc. Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
KR100960273B1 (ko) 2005-06-13 2010-06-04 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법 및 기판 처리 장치
US20060278524A1 (en) 2005-06-14 2006-12-14 Stowell Michael W System and method for modulating power signals to control sputtering
JP4853857B2 (ja) 2005-06-15 2012-01-11 東京エレクトロン株式会社 基板の処理方法，コンピュータ読み取り可能な記録媒体及び基板処理装置
JP4753173B2 (ja) 2005-06-17 2011-08-24 株式会社フジキン 流体制御装置
JP4728708B2 (ja) 2005-06-17 2011-07-20 日本電気株式会社 配線基板及びその製造方法
US7473655B2 (en) 2005-06-17 2009-01-06 Applied Materials, Inc. Method for silicon based dielectric chemical vapor deposition
US7601652B2 (en) 2005-06-21 2009-10-13 Applied Materials, Inc. Method for treating substrates and films with photoexcitation
US20060286774A1 (en) 2005-06-21 2006-12-21 Applied Materials. Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7648927B2 (en) 2005-06-21 2010-01-19 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US7651955B2 (en) 2005-06-21 2010-01-26 Applied Materials, Inc. Method for forming silicon-containing materials during a photoexcitation deposition process
US20060286819A1 (en) 2005-06-21 2006-12-21 Applied Materials, Inc. Method for silicon based dielectric deposition and clean with photoexcitation
CN101010448B (zh) 2005-06-23 2010-09-29 东京毅力科创株式会社 半导体处理装置用的构成部件及其制造方法
JP2007005582A (ja) 2005-06-24 2007-01-11 Asm Japan Kk 基板搬送装置及びそれを搭載した半導体基板製造装置
US20060292310A1 (en) 2005-06-27 2006-12-28 Applied Materials, Inc. Process kit design to reduce particle generation
US7575990B2 (en) 2005-07-01 2009-08-18 Macronix International Co., Ltd. Method of forming self-aligned contacts and local interconnects
KR20130007667A (ko) 2005-07-07 2013-01-18 엠케이에스 인스트루먼츠, 인코포레이티드 멀티 챔버 툴을 위한 오존 시스템
KR20080028963A (ko) 2005-07-08 2008-04-02 에비자 테크놀로지, 인크. 실리콘 함유 필름의 증착 방법
US8771806B2 (en) 2005-07-09 2014-07-08 Bang-Kwon Kang Surface coating method for hydrophobic and superhydrophobic treatment in atmospheric pressure plasma
US20070010072A1 (en) 2005-07-09 2007-01-11 Aviza Technology, Inc. Uniform batch film deposition process and films so produced
US7762755B2 (en) 2005-07-11 2010-07-27 Brooks Automation, Inc. Equipment storage for substrate processing apparatus
US7579285B2 (en) 2005-07-11 2009-08-25 Imec Atomic layer deposition method for depositing a layer
WO2007008939A2 (en) 2005-07-11 2007-01-18 Brooks Automation, Inc. Apparatus with on-the-fly workpiece centering
TW200702647A (en) 2005-07-13 2007-01-16 Actherm Inc Heat conductive structure of electronic clinical thermometer and clinical thermometer with the same
US20070014919A1 (en) 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
US7271044B2 (en) 2005-07-21 2007-09-18 International Business Machines Corporation CMOS (complementary metal oxide semiconductor) technology
US7314838B2 (en) 2005-07-21 2008-01-01 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming a high density dielectric film by chemical vapor deposition
JP2007035747A (ja) 2005-07-25 2007-02-08 Sumitomo Electric Ind Ltd ウェハ保持体およびそれを搭載したウェハプローバ
JP4684295B2 (ja) 2005-07-26 2011-05-18 カワサキプラントシステムズ株式会社 混合流体の均一化装置および混合流体供給設備
JP2007035899A (ja) 2005-07-27 2007-02-08 Sumitomo Electric Ind Ltd ウエハプローバ用ウエハ保持体及びそれを搭載したウエハプローバ
TWI313486B (en) 2005-07-28 2009-08-11 Nuflare Technology Inc Position measurement apparatus and method and writing apparatus and method
TWI261313B (en) 2005-07-29 2006-09-01 Ind Tech Res Inst A method for a large dimension plasma enhanced atomic layer deposition cavity and an apparatus thereof
USD571383S1 (en) 2005-07-29 2008-06-17 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
TWI327339B (en) 2005-07-29 2010-07-11 Nuflare Technology Inc Vapor phase growing apparatus and vapor phase growing method
USD593585S1 (en) 2005-07-29 2009-06-02 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
USD571831S1 (en) 2005-07-29 2008-06-24 Tokyo Electron Limited Top panel for microwave introduction window of a plasma processing apparatus
US20090047447A1 (en) 2005-08-02 2009-02-19 Sawin Herbert H Method for removing surface deposits and passivating interior surfaces of the interior of a chemical vapor deposition reactor
US20070028842A1 (en) 2005-08-02 2007-02-08 Makoto Inagawa Vacuum chamber bottom
CN101238095B (zh) 2005-08-04 2011-08-10 东曹株式会社 含有金属的化合物,其制备方法、含有金属的薄膜和其形成方法
US20090045829A1 (en) 2005-08-04 2009-02-19 Sumitomo Electric Industries, Ltd. Wafer holder for wafer prober and wafer prober equipped with same
US8148271B2 (en) 2005-08-05 2012-04-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
TW200711029A (en) 2005-08-05 2007-03-16 Tokyo Electron Ltd Substrate processing apparatus and substrate stage used therein
US20070037412A1 (en) 2005-08-05 2007-02-15 Tokyo Electron Limited In-situ atomic layer deposition
US7323401B2 (en) 2005-08-08 2008-01-29 Applied Materials, Inc. Semiconductor substrate process using a low temperature deposited carbon-containing hard mask
US7335611B2 (en) 2005-08-08 2008-02-26 Applied Materials, Inc. Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer
US7429532B2 (en) 2005-08-08 2008-09-30 Applied Materials, Inc. Semiconductor substrate process using an optically writable carbon-containing mask
US7312148B2 (en) 2005-08-08 2007-12-25 Applied Materials, Inc. Copper barrier reflow process employing high speed optical annealing
JP4666215B2 (ja) 2005-08-10 2011-04-06 株式会社ダイフク 物品搬送装置
US7229873B2 (en) 2005-08-10 2007-06-12 Texas Instruments Incorporated Process for manufacturing dual work function metal gates in a microelectronics device
JP4727667B2 (ja) 2005-08-16 2011-07-20 株式会社日立国際電気 薄膜形成方法および半導体デバイスの製造方法
US8709162B2 (en) 2005-08-16 2014-04-29 Applied Materials, Inc. Active cooling substrate support
US7718225B2 (en) 2005-08-17 2010-05-18 Applied Materials, Inc. Method to control semiconductor film deposition characteristics
JP5184357B2 (ja) 2005-08-24 2013-04-17 エレクトロニクス アンド テレコミュニケーションズ リサーチ インスチチュート バナジウム酸化物薄膜の製造方法
JP4628900B2 (ja) 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100689037B1 (ko) 2005-08-24 2007-03-08 삼성전자주식회사 마이크로파 공명 플라즈마 발생장치 및 그것을 구비하는플라즈마 처리 시스템
USD556704S1 (en) 2005-08-25 2007-12-04 Hitachi High-Technologies Corporation Grounded electrode for a plasma processing apparatus
US8123968B2 (en) 2005-08-25 2012-02-28 Round Rock Research, Llc Multiple deposition for integration of spacers in pitch multiplication process
USD557226S1 (en) 2005-08-25 2007-12-11 Hitachi High-Technologies Corporation Electrode cover for a plasma processing apparatus
US7402534B2 (en) 2005-08-26 2008-07-22 Applied Materials, Inc. Pretreatment processes within a batch ALD reactor
US7393736B2 (en) 2005-08-29 2008-07-01 Micron Technology, Inc. Atomic layer deposition of Zrx Hfy Sn1-x-y O2 films as high k gate dielectrics
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US20070047384A1 (en) 2005-09-01 2007-03-01 Mclaughlin Jon K Control system for and method of combining materials
JP4815600B2 (ja) 2005-09-06 2011-11-16 株式会社テラセミコン 多結晶シリコン薄膜製造方法及びその製造装置
TW200714741A (en) 2005-09-08 2007-04-16 Applied Materials Inc Patterned electroless metallization processes for large area electronics
US8052794B2 (en) 2005-09-12 2011-11-08 The United States Of America As Represented By The Secretary Of The Navy Directed reagents to improve material uniformity
US20070056843A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056850A1 (en) 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070065597A1 (en) 2005-09-15 2007-03-22 Asm Japan K.K. Plasma CVD film formation apparatus provided with mask
JP5017950B2 (ja) 2005-09-21 2012-09-05 株式会社Ｓｕｍｃｏ エピタキシャル成長装置の温度管理方法
JP2007088113A (ja) 2005-09-21 2007-04-05 Sony Corp 半導体装置の製造方法
US20070066084A1 (en) 2005-09-21 2007-03-22 Cory Wajda Method and system for forming a layer with controllable spstial variation
US20070065578A1 (en) 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7578616B2 (en) 2005-09-22 2009-08-25 Lam Research Corporation Apparatus for determining a temperature of a substrate and methods therefor
US7976641B1 (en) 2005-09-30 2011-07-12 Lam Research Corporation Extending storage time of removed plasma chamber components prior to cleaning thereof
US7691204B2 (en) 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
WO2007041164A2 (en) 2005-09-30 2007-04-12 Bognar John A Measuring nitrogen oxides and other gases by ozone formation
US8372203B2 (en) 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
USD541125S1 (en) 2005-10-05 2007-04-24 Powers Products Iii, Llc Fastener slide
US7785658B2 (en) 2005-10-07 2010-08-31 Asm Japan K.K. Method for forming metal wiring structure
US7754906B2 (en) 2005-10-07 2010-07-13 Air Products And Chemicals, Inc. Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
US7955436B2 (en) 2006-02-24 2011-06-07 Intermolecular, Inc. Systems and methods for sealing in site-isolated reactors
KR100964775B1 (ko) 2005-10-12 2010-06-21 파나소닉 주식회사 플라즈마 처리장치 및 플라즈마 처리방법
US8149346B2 (en) 2005-10-14 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
CN101283442A (zh) 2005-10-14 2008-10-08 盐谷喜美 半导体装置以及制造方法
US7294581B2 (en) 2005-10-17 2007-11-13 Applied Materials, Inc. Method for fabricating silicon nitride spacer structures
US7244658B2 (en) 2005-10-17 2007-07-17 Applied Materials, Inc. Low stress STI films and methods
KR100725108B1 (ko) 2005-10-18 2007-06-04 삼성전자주식회사 가스 공급 장치 및 이를 갖는 기판 가공 장치
US7691205B2 (en) 2005-10-18 2010-04-06 Asm Japan K.K. Substrate-supporting device
US7727828B2 (en) 2005-10-20 2010-06-01 Applied Materials, Inc. Method for fabricating a gate dielectric of a field effect transistor
US8377628B2 (en) 2005-10-20 2013-02-19 Agfa Graphics Nv Negative working, heat-sensitive, lithographic printing plate precursor
JP2007115973A (ja) 2005-10-21 2007-05-10 Shin Etsu Chem Co Ltd 耐食性部材
US7968205B2 (en) 2005-10-21 2011-06-28 Shin-Etsu Chemical Co., Ltd. Corrosion resistant multilayer member
US7906910B2 (en) 2005-10-27 2011-03-15 Luxim Corporation Plasma lamp with conductive material positioned relative to RF feed
US7994721B2 (en) 2005-10-27 2011-08-09 Luxim Corporation Plasma lamp and methods using a waveguide body and protruding bulb
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7638951B2 (en) 2005-10-27 2009-12-29 Luxim Corporation Plasma lamp with stable feedback amplification and method therefor
JP5044931B2 (ja) 2005-10-31 2012-10-10 東京エレクトロン株式会社 ガス供給装置及び基板処理装置
US20070095283A1 (en) 2005-10-31 2007-05-03 Galewski Carl J Pumping System for Atomic Layer Deposition
DE102005051994B4 (de) 2005-10-31 2011-12-01 Globalfoundries Inc. Verformungsverfahrenstechnik in Transistoren auf Siliziumbasis unter Anwendung eingebetteter Halbleiterschichten mit Atomen mit einem großen kovalenten Radius
WO2007053626A2 (en) 2005-10-31 2007-05-10 Applied Materials, Inc. Process abatement reactor
US7399712B1 (en) 2005-10-31 2008-07-15 Novellus Systems, Inc. Method for etching organic hardmasks
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
TWI332532B (en) 2005-11-04 2010-11-01 Applied Materials Inc Apparatus and process for plasma-enhanced atomic layer deposition
US7695808B2 (en) 2005-11-07 2010-04-13 3M Innovative Properties Company Thermal transfer coating
US7622378B2 (en) 2005-11-09 2009-11-24 Tokyo Electron Limited Multi-step system and method for curing a dielectric film
US7561982B2 (en) 2005-11-10 2009-07-14 Shake Awake Products, LLC Physical attribute recording method and system
JP4940635B2 (ja) 2005-11-14 2012-05-30 東京エレクトロン株式会社 加熱装置、熱処理装置及び記憶媒体
US20090087967A1 (en) 2005-11-14 2009-04-02 Todd Michael A Precursors and processes for low temperature selective epitaxial growth
US7589028B1 (en) 2005-11-15 2009-09-15 Novellus Systems, Inc. Hydroxyl bond removal and film densification method for oxide films using microwave post treatment
JP4975414B2 (ja) 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Ｃｖｄ又はａｌｄによる膜の堆積のための方法
KR100660890B1 (ko) 2005-11-16 2006-12-26 삼성전자주식회사 Ａｌｄ를 이용한 이산화실리콘막 형성 방법
GB2432363B (en) 2005-11-16 2010-06-23 Epichem Ltd Hafnocene and zirconocene precursors, and use thereof in atomic layer deposition
US20070116873A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US20070116888A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US8815014B2 (en) 2005-11-18 2014-08-26 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
US20070116872A1 (en) 2005-11-18 2007-05-24 Tokyo Electron Limited Apparatus for thermal and plasma enhanced vapor deposition and method of operating
US7897217B2 (en) 2005-11-18 2011-03-01 Tokyo Electron Limited Method and system for performing plasma enhanced atomic layer deposition
US7968437B2 (en) 2005-11-18 2011-06-28 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method and substrate processing apparatus
JP2009529223A (ja) 2005-11-22 2009-08-13 ジーナス インコーポレーテッド 小体積対称流れシングルウェハａｌｄ装置
US8382909B2 (en) 2005-11-23 2013-02-26 Edwards Limited Use of spectroscopic techniques to monitor and control reactant gas input into a pre-pump reactive gas injection system
US7629277B2 (en) 2005-11-23 2009-12-08 Honeywell International Inc. Frag shield
US7912439B2 (en) 2005-11-25 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and operating method thereof
US8603580B2 (en) 2005-11-28 2013-12-10 Msp Corporation High stability and high capacity precursor vapor generation for thin film deposition
JP5082229B2 (ja) 2005-11-29 2012-11-28 東京エレクトロン株式会社 プラズマ処理装置
US20070125762A1 (en) 2005-12-01 2007-06-07 Applied Materials, Inc. Multi-zone resistive heater
US7862683B2 (en) 2005-12-02 2011-01-04 Tokyo Electron Limited Chamber dry cleaning
US7963917B2 (en) 2005-12-05 2011-06-21 Echo Therapeutics, Inc. System and method for continuous non-invasive glucose monitoring
US7857506B2 (en) 2005-12-05 2010-12-28 Sencal Llc Disposable, pre-calibrated, pre-validated sensors for use in bio-processing applications
US8003919B2 (en) 2005-12-06 2011-08-23 Dainippon Screen Mfg. Co., Ltd. Substrate heat treatment apparatus
KR101044355B1 (ko) 2005-12-06 2011-06-29 가부시키가이샤 알박 가스 헤드 및 박막제조장치
JP4666496B2 (ja) 2005-12-07 2011-04-06 大日本スクリーン製造株式会社 基板熱処理装置
JP4803578B2 (ja) 2005-12-08 2011-10-26 東京エレクトロン株式会社 成膜方法
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US8454749B2 (en) 2005-12-19 2013-06-04 Tokyo Electron Limited Method and system for sealing a first assembly to a second assembly of a processing system
US20070264427A1 (en) 2005-12-21 2007-11-15 Asm Japan K.K. Thin film formation by atomic layer growth and chemical vapor deposition
US7651571B2 (en) 2005-12-22 2010-01-26 Kyocera Corporation Susceptor
EP1801855B1 (en) 2005-12-22 2009-01-14 Freiberger Compound Materials GmbH Processes for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices
US7713584B2 (en) 2005-12-22 2010-05-11 Asm International N.V. Process for producing oxide films
US7381644B1 (en) 2005-12-23 2008-06-03 Novellus Systems, Inc. Pulsed PECVD method for modulating hydrogen content in hard mask
JP4629574B2 (ja) 2005-12-27 2011-02-09 日本発條株式会社 基板支持装置と、その製造方法
KR101296911B1 (ko) 2005-12-28 2013-08-14 엘지디스플레이 주식회사 평판표시소자의 제조장치 및 그의 정전기량 검출장치 및검출방법
TWM292692U (en) 2005-12-29 2006-06-21 Powerchip Semiconductor Corp Thermocouple apparatus
TWI284390B (en) 2006-01-10 2007-07-21 Ind Tech Res Inst Manufacturing method of charge store device
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
CN101003895B (zh) 2006-01-16 2011-10-19 中微半导体设备(上海)有限公司 一种传送反应物到基片的装置及其处理方法
JP5068458B2 (ja) 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5324026B2 (ja) 2006-01-18 2013-10-23 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の制御方法
JP2007191792A (ja) 2006-01-19 2007-08-02 Atto Co Ltd ガス分離型シャワーヘッド
JP5280861B2 (ja) 2006-01-19 2013-09-04 エーエスエム アメリカ インコーポレイテッド 高温ａｌｄインレットマニホールド
US20080254220A1 (en) 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
US20070173071A1 (en) 2006-01-20 2007-07-26 International Business Machines Corporation SiCOH dielectric
US8673413B2 (en) 2006-01-27 2014-03-18 Tosoh Finechem Corporation Method for packing solid organometallic compound and packed container
JP4854317B2 (ja) 2006-01-31 2012-01-18 東京エレクトロン株式会社 基板処理方法
JP4911980B2 (ja) 2006-02-02 2012-04-04 東京エレクトロン株式会社 減圧処理装置
KR100785163B1 (ko) 2006-02-03 2007-12-11 위순임 다중 원격 플라즈마 발생기를 구비하는 기판 처리 시스템
US7736437B2 (en) 2006-02-03 2010-06-15 Integrated Materials, Incorporated Baffled liner cover
US20070184179A1 (en) 2006-02-09 2007-08-09 Akshay Waghray Methods and apparatus to monitor a process of depositing a constituent of a multi-constituent gas during production of a composite brake disc
WO2007091638A1 (ja) 2006-02-09 2007-08-16 Sumco Techxiv Corporation サセプタおよびエピタキシャルウェハの製造装置
US7695567B2 (en) 2006-02-10 2010-04-13 Applied Materials, Inc. Water vapor passivation of a wall facing a plasma
US8057603B2 (en) 2006-02-13 2011-11-15 Tokyo Electron Limited Method of cleaning substrate processing chamber, storage medium, and substrate processing chamber
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2007211326A (ja) 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
JP4783169B2 (ja) 2006-02-13 2011-09-28 パナソニック株式会社 ドライエッチング方法、微細構造形成方法、モールド及びその製造方法
KR101379015B1 (ko) 2006-02-15 2014-03-28 한국에이에스엠지니텍 주식회사 플라즈마 원자층 증착법을 이용한 루테늄 막 증착 방법 및고밀도 루테늄 층
KR101224377B1 (ko) 2006-02-17 2013-01-21 삼성디스플레이 주식회사 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법
KR101186740B1 (ko) 2006-02-17 2012-09-28 삼성전자주식회사 뱅크형성 방법 및 이에 의해 형성된 뱅크를 함유하는 유기박막 트랜지스터
US20070207275A1 (en) 2006-02-21 2007-09-06 Applied Materials, Inc. Enhancement of remote plasma source clean for dielectric films
KR20070084683A (ko) 2006-02-21 2007-08-27 국민대학교산학협력단 분자층 증착법
JP4497103B2 (ja) 2006-02-21 2010-07-07 住友電気工業株式会社 ウェハ保持体およびそれを搭載したヒータユニット、ウェハプローバ
US20100022097A1 (en) 2006-02-27 2010-01-28 Youtec Co., Ltd. Vaporizer, semiconductor production apparatus and process of semiconductor production
US7354849B2 (en) 2006-02-28 2008-04-08 Intel Corporation Catalytically enhanced atomic layer deposition process
US20070215278A1 (en) 2006-03-06 2007-09-20 Muneo Furuse Plasma etching apparatus and method for forming inner wall of plasma processing chamber
CN101395453B (zh) 2006-03-07 2010-09-29 喜开理株式会社 气体流量检验单元
JP5153614B2 (ja) 2006-03-07 2013-02-27 株式会社日立国際電気 基板処理装置、半導体基板の処理方法、制御プログラム、制御プログラムが記録された記録媒体および基板処理方法
US7740705B2 (en) 2006-03-08 2010-06-22 Tokyo Electron Limited Exhaust apparatus configured to reduce particle contamination in a deposition system
US7670432B2 (en) 2006-03-08 2010-03-02 Tokyo Electron Limited Exhaust system for a vacuum processing system
US7794546B2 (en) 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
US7460003B2 (en) 2006-03-09 2008-12-02 International Business Machines Corporation Electronic fuse with conformal fuse element formed over a freestanding dielectric spacer
US7494882B2 (en) 2006-03-10 2009-02-24 Texas Instruments Incorporated Manufacturing a semiconductive device using a controlled atomic layer removal process
KR20070093493A (ko) 2006-03-14 2007-09-19 엘지이노텍 주식회사 서셉터 및 반도체 제조장치
US20070218200A1 (en) 2006-03-16 2007-09-20 Kenji Suzuki Method and apparatus for reducing particle formation in a vapor distribution system
US8268078B2 (en) 2006-03-16 2012-09-18 Tokyo Electron Limited Method and apparatus for reducing particle contamination in a deposition system
US8008596B2 (en) 2006-03-16 2011-08-30 Tokyo Electron Limited Plasma processing apparatus and electrode used therein
US7566891B2 (en) 2006-03-17 2009-07-28 Applied Materials, Inc. Apparatus and method for treating a substrate with UV radiation using primary and secondary reflectors
DE102006012367B4 (de) 2006-03-17 2015-07-16 Air Liquide Deutschland Gmbh Verfahren zur Herstellung eines Hohlkörpers aus Kunststoff mit innenseitiger Sperrschicht
US7692171B2 (en) 2006-03-17 2010-04-06 Andrzei Kaszuba Apparatus and method for exposing a substrate to UV radiation using asymmetric reflectors
US8304328B2 (en) 2006-03-20 2012-11-06 Hitachi Kokusai Electric Inc. Manufacturing method of semiconductor device and substrate processing apparatus
US7410915B2 (en) 2006-03-23 2008-08-12 Asm Japan K.K. Method of forming carbon polymer film using plasma CVD
JP4827569B2 (ja) 2006-03-23 2011-11-30 大日本スクリーン製造株式会社 基板支持構造とこれを用いた熱処理装置と基板支持構造に用いられるシート状物と基板支持構造の製造方法
WO2007112058A2 (en) 2006-03-24 2007-10-04 Applied Materials, Inc. Carbon precursors for use during silicon epitaxial firm formation
USD549815S1 (en) 2006-03-27 2007-08-28 Murphy Timothy M Air flow directing fixture for heating, air conditioning and ventilation devices
US7456429B2 (en) 2006-03-29 2008-11-25 Eastman Kodak Company Apparatus for atomic layer deposition
JP2007266464A (ja) 2006-03-29 2007-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
US20070234955A1 (en) 2006-03-29 2007-10-11 Tokyo Electron Limited Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system
US7910494B2 (en) 2006-03-29 2011-03-22 Tokyo Electron Limited Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto
US7829463B2 (en) 2006-03-30 2010-11-09 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
EP2006414A2 (en) 2006-03-30 2008-12-24 Mitsui Engineering & Shipbuilding Co., Ltd. Atomic layer growing apparatus
US8951478B2 (en) 2006-03-30 2015-02-10 Applied Materials, Inc. Ampoule with a thermally conductive coating
US7645484B2 (en) 2006-03-31 2010-01-12 Tokyo Electron Limited Method of forming a metal carbide or metal carbonitride film having improved adhesion
US7737035B1 (en) 2006-03-31 2010-06-15 Novellus Systems, Inc. Dual seal deposition process chamber and process
US8012442B2 (en) 2006-03-31 2011-09-06 Tokyo Electron Limited Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
EP2008068A2 (en) 2006-03-31 2008-12-31 Mesoscribe Technologies, Inc. Thermocouples
US7780865B2 (en) 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US8097300B2 (en) 2006-03-31 2012-01-17 Tokyo Electron Limited Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
JP4597894B2 (ja) 2006-03-31 2010-12-15 東京エレクトロン株式会社 基板載置台および基板処理装置
US20070237697A1 (en) 2006-03-31 2007-10-11 Tokyo Electron Limited Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
US7396491B2 (en) 2006-04-06 2008-07-08 Osram Sylvania Inc. UV-emitting phosphor and lamp containing same
USD614258S1 (en) 2006-04-06 2010-04-20 Anemos Company Ltd. Motionless mixer
JP4943047B2 (ja) 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US7276447B1 (en) 2006-04-11 2007-10-02 Applied Materials, Inc. Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material
JP4764241B2 (ja) 2006-04-17 2011-08-31 株式会社日立ハイテクノロジーズ ドライエッチング方法
US8399349B2 (en) 2006-04-18 2013-03-19 Air Products And Chemicals, Inc. Materials and methods of forming controlled void
US20070248767A1 (en) 2006-04-19 2007-10-25 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7655328B2 (en) 2006-04-20 2010-02-02 Shin-Etsu Chemical Co., Ltd. Conductive, plasma-resistant member
US8187415B2 (en) 2006-04-21 2012-05-29 Applied Materials, Inc. Plasma etch reactor with distribution of etch gases across a wafer surface and a polymer oxidizing gas in an independently fed center gas zone
US7410852B2 (en) 2006-04-21 2008-08-12 International Business Machines Corporation Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors
FR2900276B1 (fr) 2006-04-25 2008-09-12 St Microelectronics Sa Depot peald d'un materiau a base de silicium
JP4345774B2 (ja) 2006-04-26 2009-10-14 ソニー株式会社 半導体装置の製造方法
US20070251456A1 (en) 2006-04-27 2007-11-01 Applied Materials, Inc., A Delaware Corporation Composite heater and chill plate
US20070252233A1 (en) 2006-04-28 2007-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
US20070259778A1 (en) 2006-04-28 2007-11-08 Syracuse University Flameless heating system
US8231799B2 (en) 2006-04-28 2012-07-31 Applied Materials, Inc. Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
US7537804B2 (en) 2006-04-28 2009-05-26 Micron Technology, Inc. ALD methods in which two or more different precursors are utilized with one or more reactants to form materials over substrates
US7547633B2 (en) 2006-05-01 2009-06-16 Applied Materials, Inc. UV assisted thermal processing
US7997795B2 (en) 2006-05-02 2011-08-16 Watlow Electric Manufacturing Company Temperature sensors and methods of manufacture thereof
US7798096B2 (en) 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070261868A1 (en) 2006-05-12 2007-11-15 Gross James R Magnetic torque-limiting device and method
KR100829605B1 (ko) 2006-05-12 2008-05-15 삼성전자주식회사 소노스 타입의 비휘발성 메모리 장치의 제조 방법
US20070266945A1 (en) 2006-05-16 2007-11-22 Asm Japan K.K. Plasma cvd apparatus equipped with plasma blocking insulation plate
JP2007311558A (ja) 2006-05-18 2007-11-29 Toshiba Corp 気相成長装置および気相成長基板の製造方法
US7875312B2 (en) 2006-05-23 2011-01-25 Air Products And Chemicals, Inc. Process for producing silicon oxide films for organoaminosilane precursors
US8530361B2 (en) 2006-05-23 2013-09-10 Air Products And Chemicals, Inc. Process for producing silicon and oxide films from organoaminosilane precursors
BRPI0722416A2 (pt) 2006-05-26 2012-12-25 Ineos Mfg Belgium Nv processo de polimerizaÇço de fase de pasta
US20070289534A1 (en) 2006-05-30 2007-12-20 Applied Materials, Inc. Process chamber for dielectric gapfill
US7790634B2 (en) 2006-05-30 2010-09-07 Applied Materials, Inc Method for depositing and curing low-k films for gapfill and conformal film applications
US20070281106A1 (en) 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill
US7825038B2 (en) 2006-05-30 2010-11-02 Applied Materials, Inc. Chemical vapor deposition of high quality flow-like silicon dioxide using a silicon containing precursor and atomic oxygen
JP2007324350A (ja) 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US20070281105A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US7623940B2 (en) 2006-06-02 2009-11-24 The Boeing Company Direct-manufactured duct interconnects
US20070281082A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Flash Heating in Atomic Layer Deposition
US20070277735A1 (en) 2006-06-02 2007-12-06 Nima Mokhlesi Systems for Atomic Layer Deposition of Oxides Using Krypton as an Ion Generating Feeding Gas
US8278176B2 (en) 2006-06-07 2012-10-02 Asm America, Inc. Selective epitaxial formation of semiconductor films
US20080018004A1 (en) 2006-06-09 2008-01-24 Air Products And Chemicals, Inc. High Flow GaCl3 Delivery
KR100790779B1 (ko) 2006-06-09 2008-01-02 주식회사 아이피에스 갭 필 능력을 향상시킨 절연막 증착 방법
JP5069427B2 (ja) 2006-06-13 2012-11-07 北陸成型工業株式会社 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5543203B2 (ja) 2006-06-16 2014-07-09 フジフィルム マニュファクチャリング ユーロプ ビー．ブイ． 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置
JP5045000B2 (ja) 2006-06-20 2012-10-10 東京エレクトロン株式会社 成膜装置、ガス供給装置、成膜方法及び記憶媒体
US7625820B1 (en) 2006-06-21 2009-12-01 Novellus Systems, Inc. Method of selective coverage of high aspect ratio structures with a conformal film
US7482211B2 (en) 2006-06-22 2009-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Junction leakage reduction in SiGe process by implantation
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
US7833351B2 (en) 2006-06-26 2010-11-16 Applied Materials, Inc. Batch processing platform for ALD and CVD
US7554103B2 (en) 2006-06-26 2009-06-30 Applied Materials, Inc. Increased tool utilization/reduction in MWBC for UV curing chamber
US7718045B2 (en) 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature
US7494272B2 (en) 2006-06-27 2009-02-24 Applied Materials, Inc. Dynamic surface annealing using addressable laser array with pyrometry feedback
US7867578B2 (en) 2006-06-28 2011-01-11 Applied Materials, Inc. Method for depositing an amorphous carbon film with improved density and step coverage
US20080153311A1 (en) 2006-06-28 2008-06-26 Deenesh Padhi Method for depositing an amorphous carbon film with improved density and step coverage
US7501355B2 (en) 2006-06-29 2009-03-10 Applied Materials, Inc. Decreasing the etch rate of silicon nitride by carbon addition
JP4193910B2 (ja) 2006-06-29 2008-12-10 ダイキン工業株式会社 冷媒分流器一体化構造の膨張弁
US20080003425A1 (en) 2006-06-29 2008-01-03 Spencer James T Systems and Methods of the Formation of Solid State Metal Boride and Oxide Coatings
JP4847231B2 (ja) 2006-06-29 2011-12-28 ルネサスエレクトロニクス株式会社 電界に起因する剥離物による汚染を防止する装置
US7416989B1 (en) 2006-06-30 2008-08-26 Novellus Systems, Inc. Adsorption based material removal process
WO2008004278A1 (fr) 2006-07-04 2008-01-10 Toshiba Mitsubishi-Electric Industrial Systems Corporation Procédé et dispositif de concentration / dilution de gaz spécifique
JP4193883B2 (ja) 2006-07-05 2008-12-10 住友電気工業株式会社 有機金属気相成長装置
JP5027573B2 (ja) 2006-07-06 2012-09-19 株式会社小松製作所 温度センサおよび温調装置
WO2008008737A2 (en) 2006-07-10 2008-01-17 Asyst Technologies, Inc. Variable lot size load port
KR100799735B1 (ko) 2006-07-10 2008-02-01 삼성전자주식회사 금속 산화물 형성 방법 및 이를 수행하기 위한 장치
KR100782484B1 (ko) 2006-07-13 2007-12-05 삼성전자주식회사 열처리 설비
JP5171625B2 (ja) 2006-07-20 2013-03-27 株式会社日立国際電気 半導体デバイスの製造方法及び基板処理装置
JP4098338B2 (ja) 2006-07-20 2008-06-11 川崎重工業株式会社 ウェハ移載装置および基板移載装置
WO2008011579A2 (en) 2006-07-21 2008-01-24 Aixtron, Inc. Small volume symmetric flow single wafer ald apparatus
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
KR100791334B1 (ko) 2006-07-26 2008-01-07 삼성전자주식회사 원자층 증착법을 이용한 금속 산화막 형성 방법
US9230838B2 (en) 2006-07-26 2016-01-05 Tec-Sem Ag Apparatus for storage of objects from the field of manufacture of electronic components
FR2904328B1 (fr) 2006-07-27 2008-10-24 St Microelectronics Sa Depot par adsorption sous un champ electrique
EP2052098A1 (en) 2006-07-27 2009-04-29 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of cleaning film forming apparatus and film forming apparatus
US8187679B2 (en) 2006-07-29 2012-05-29 Lotus Applied Technology, Llc Radical-enhanced atomic layer deposition system and method
JP2008041734A (ja) 2006-08-02 2008-02-21 Sony Corp 半導体装置および半導体装置の製造方法
US7749879B2 (en) 2006-08-03 2010-07-06 Micron Technology, Inc. ALD of silicon films on germanium
JP2008039513A (ja) 2006-08-03 2008-02-21 Hitachi Metals Ltd 質量流量制御装置の流量制御補正方法
US7632354B2 (en) 2006-08-08 2009-12-15 Tokyo Electron Limited Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system
US8080282B2 (en) 2006-08-08 2011-12-20 Asm Japan K.K. Method for forming silicon carbide film containing oxygen
US7514375B1 (en) 2006-08-08 2009-04-07 Novellus Systems, Inc. Pulsed bias having high pulse frequency for filling gaps with dielectric material
US20080035306A1 (en) 2006-08-08 2008-02-14 White John M Heating and cooling of substrate support
GB0615722D0 (en) 2006-08-08 2006-09-20 Boc Group Plc Apparatus for conveying a waste stream
TW200814131A (en) 2006-08-11 2008-03-16 Schott Ag External electrode fluorescent lamp with optimized operating efficiency
US20080045030A1 (en) 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
US7935942B2 (en) 2006-08-15 2011-05-03 Varian Semiconductor Equipment Associates, Inc. Technique for low-temperature ion implantation
US20110027999A1 (en) 2006-08-16 2011-02-03 Freescale Semiconductor, Inc. Etch method in the manufacture of an integrated circuit
KR100825787B1 (ko) 2006-08-18 2008-04-29 삼성전자주식회사 전하트랩층을 포함하는 반도체 메모리소자
WO2008023711A1 (fr) 2006-08-23 2008-02-28 Horiba Stec, Co., Ltd. Appareil à tableau de distribution de gaz intégré
JP4961895B2 (ja) 2006-08-25 2012-06-27 東京エレクトロン株式会社 ウェハ搬送装置、ウェハ搬送方法及び記憶媒体
JP4904995B2 (ja) 2006-08-28 2012-03-28 シンフォニアテクノロジー株式会社 ロードポート装置
US7690881B2 (en) 2006-08-30 2010-04-06 Asm Japan K.K. Substrate-processing apparatus with buffer mechanism and substrate-transferring apparatus
KR100753020B1 (ko) 2006-08-30 2007-08-30 한국화학연구원 원자층 증착법을 이용한 비휘발성 부유 게이트 메모리소자를 위한 나노적층체의 제조방법
US7611980B2 (en) 2006-08-30 2009-11-03 Micron Technology, Inc. Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
US20080260963A1 (en) 2007-04-17 2008-10-23 Hyungsuk Alexander Yoon Apparatus and method for pre and post treatment of atomic layer deposition
US20080063798A1 (en) 2006-08-30 2008-03-13 Kher Shreyas S Precursors and hardware for cvd and ald
US7544604B2 (en) 2006-08-31 2009-06-09 Micron Technology, Inc. Tantalum lanthanide oxynitride films
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US7605030B2 (en) 2006-08-31 2009-10-20 Micron Technology, Inc. Hafnium tantalum oxynitride high-k dielectric and metal gates
JP4943780B2 (ja) 2006-08-31 2012-05-30 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20080057659A1 (en) 2006-08-31 2008-03-06 Micron Technology, Inc. Hafnium aluminium oxynitride high-K dielectric and metal gates
US20080241805A1 (en) 2006-08-31 2008-10-02 Q-Track Corporation System and method for simulated dosimetry using a real time locating system
KR100752190B1 (ko) 2006-09-04 2007-08-27 동부일렉트로닉스 주식회사 반도체 소자의 갭필 방법
JP5138253B2 (ja) 2006-09-05 2013-02-06 東京エレクトロン株式会社 アニール装置
EP1898195B1 (de) 2006-09-06 2010-07-14 Kistler Holding AG Temperatursensor mit bearbeitbarer Front
JP4762835B2 (ja) 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
KR100761857B1 (ko) 2006-09-08 2007-09-28 삼성전자주식회사 반도체 소자의 미세패턴 형성방법 및 이를 이용한 반도체소자의 제조방법
JP2008066159A (ja) 2006-09-08 2008-03-21 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
TWI275658B (en) 2006-09-13 2007-03-11 Ind Tech Res Inst Method of improving surface frame resistance of a substrate
USD613829S1 (en) 2006-09-13 2010-04-13 Hayward Industries, Inc. Circular suction outlet assembly cover
US8852349B2 (en) 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
JP2008072030A (ja) 2006-09-15 2008-03-27 Matsushita Electric Ind Co Ltd プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法
US7789965B2 (en) 2006-09-19 2010-09-07 Asm Japan K.K. Method of cleaning UV irradiation chamber
US20080194113A1 (en) 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US7718553B2 (en) 2006-09-21 2010-05-18 Asm Japan K.K. Method for forming insulation film having high density
US9632073B2 (en) 2012-04-02 2017-04-25 Lux Bio Group, Inc. Apparatus and method for molecular separation, purification, and sensing
JP2008074963A (ja) 2006-09-21 2008-04-03 Fujifilm Corp 組成物、膜、およびその製造方法
US7902991B2 (en) 2006-09-21 2011-03-08 Applied Materials, Inc. Frequency monitoring to detect plasma process abnormality
JP4899744B2 (ja) 2006-09-22 2012-03-21 東京エレクトロン株式会社 被処理体の酸化装置
US7829815B2 (en) 2006-09-22 2010-11-09 Taiwan Semiconductor Manufacturing Co., Ltd. Adjustable electrodes and coils for plasma density distribution control
US7740437B2 (en) 2006-09-22 2010-06-22 Asm International N.V. Processing system with increased cassette storage capacity
JP4814038B2 (ja) 2006-09-25 2011-11-09 株式会社日立国際電気 基板処理装置および反応容器の着脱方法
US7723648B2 (en) 2006-09-25 2010-05-25 Tokyo Electron Limited Temperature controlled substrate holder with non-uniform insulation layer for a substrate processing system
WO2008039465A2 (en) 2006-09-25 2008-04-03 E. I. Du Pont De Nemours And Company Method for removing surface deposits in the interior of a chemical vapor deposition reactor
WO2008039448A2 (en) 2006-09-25 2008-04-03 Lightsources Inc. Snap-lock connector
USD634329S1 (en) 2006-09-26 2011-03-15 Margareta Wastrom Computer platform with forearm support
WO2008039943A2 (en) 2006-09-27 2008-04-03 Vserv Tech Wafer processing system with dual wafer robots capable of asynchronous motion
US7476291B2 (en) 2006-09-28 2009-01-13 Lam Research Corporation High chamber temperature process and chamber design for photo-resist stripping and post-metal etch passivation
TWI462179B (zh) 2006-09-28 2014-11-21 Tokyo Electron Ltd 用以形成氧化矽膜之成膜方法與裝置
JP2008085129A (ja) 2006-09-28 2008-04-10 Taiheiyo Cement Corp 基板載置装置
DE102006046374B4 (de) 2006-09-29 2010-11-11 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Reduzieren der Lackvergiftung während des Strukturierens von Siliziumnitridschichten in einem Halbleiterbauelement
JP2008089320A (ja) 2006-09-29 2008-04-17 Nicom Co Ltd 流量計測装置
US7767262B2 (en) 2006-09-29 2010-08-03 Tokyo Electron Limited Nitrogen profile engineering in nitrided high dielectric constant films
KR100799152B1 (ko) 2006-10-02 2008-01-29 주식회사 하이닉스반도체 스토리지노드 쓰러짐을 방지한 실린더형 캐패시터의 제조방법
TW200822253A (en) 2006-10-02 2008-05-16 Matsushita Electric Ind Co Ltd Component crimping apparatus control method, component crimping apparatus, and measuring tool
JP2008091761A (ja) 2006-10-04 2008-04-17 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US7494884B2 (en) 2006-10-05 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. SiGe selective growth without a hard mask
KR101427142B1 (ko) 2006-10-05 2014-08-07 에이에스엠 아메리카, 인코포레이티드 금속 규산염 막의 원자층 증착
USD593969S1 (en) 2006-10-10 2009-06-09 Tokyo Electron Limited Processing chamber for manufacturing semiconductors
KR101480971B1 (ko) 2006-10-10 2015-01-09 에이에스엠 아메리카, 인코포레이티드 전구체 전달 시스템
US8986456B2 (en) 2006-10-10 2015-03-24 Asm America, Inc. Precursor delivery system
NZ550531A (en) 2006-10-12 2009-05-31 Canterprise Ltd A method of producing an implant with an improved bone growth surface
US20080087890A1 (en) 2006-10-16 2008-04-17 Micron Technology, Inc. Methods to form dielectric structures in semiconductor devices and resulting devices
CN100451163C (zh) 2006-10-18 2009-01-14 中微半导体设备(上海)有限公司 用于半导体工艺件处理反应器的气体分布装置及其反应器
JP2008108860A (ja) 2006-10-25 2008-05-08 Elpida Memory Inc 半導体装置の製造方法
US20080099147A1 (en) 2006-10-26 2008-05-01 Nyi Oo Myo Temperature controlled multi-gas distribution assembly
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
JP2008108991A (ja) 2006-10-27 2008-05-08 Daihen Corp ワーク保持機構
US7851232B2 (en) 2006-10-30 2010-12-14 Novellus Systems, Inc. UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7727864B2 (en) 2006-11-01 2010-06-01 Asm America, Inc. Controlled composition using plasma-enhanced atomic layer deposition
US7888273B1 (en) 2006-11-01 2011-02-15 Novellus Systems, Inc. Density gradient-free gap fill
US9245739B2 (en) 2006-11-01 2016-01-26 Lam Research Corporation Low-K oxide deposition by hydrolysis and condensation
US7955516B2 (en) 2006-11-02 2011-06-07 Applied Materials, Inc. Etching of nano-imprint templates using an etch reactor
JP2008117903A (ja) 2006-11-02 2008-05-22 Toshiba Corp 半導体装置の製造方法
WO2008056295A1 (en) 2006-11-09 2008-05-15 Nxp B.V. A semiconductor device and a method of manufacturing thereof
WO2008056742A1 (fr) 2006-11-09 2008-05-15 Ulvac, Inc. Procédé de fabrication de film barrière
JP4464949B2 (ja) 2006-11-10 2010-05-19 株式会社日立国際電気 基板処理装置及び選択エピタキシャル膜成長方法
KR101447184B1 (ko) 2006-11-10 2014-10-08 엘아이지에이디피 주식회사 게이트슬릿 개폐장치가 구비된 공정챔버
US7749574B2 (en) 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
US7776395B2 (en) 2006-11-14 2010-08-17 Applied Materials, Inc. Method of depositing catalyst assisted silicates of high-k materials
US20080179104A1 (en) 2006-11-14 2008-07-31 Smith International, Inc. Nano-reinforced wc-co for improved properties
US7671134B2 (en) 2006-11-15 2010-03-02 Brady Worldwide, Inc. Compositions with improved adhesion to low surface energy substrates
US7976634B2 (en) 2006-11-21 2011-07-12 Applied Materials, Inc. Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems
US20090223441A1 (en) 2006-11-22 2009-09-10 Chantal Arena High volume delivery system for gallium trichloride
US20080118334A1 (en) 2006-11-22 2008-05-22 Bonora Anthony C Variable pitch storage shelves
US8128333B2 (en) 2006-11-27 2012-03-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and manufacturing method for semiconductor devices
US20080124946A1 (en) 2006-11-28 2008-05-29 Air Products And Chemicals, Inc. Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7807575B2 (en) 2006-11-29 2010-10-05 Micron Technology, Inc. Methods to reduce the critical dimension of semiconductor devices
US7853364B2 (en) 2006-11-30 2010-12-14 Veeco Instruments, Inc. Adaptive controller for ion source
US20080132046A1 (en) 2006-12-04 2008-06-05 Varian Semiconductor Equipment Associates, Inc. Plasma Doping With Electronically Controllable Implant Angle
US20080193673A1 (en) 2006-12-05 2008-08-14 Applied Materials, Inc. Method of processing a workpiece using a mid-chamber gas distribution plate, tuned plasma flow control grid and electrode
US7776724B2 (en) 2006-12-07 2010-08-17 Innovalight, Inc. Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
US7906174B1 (en) 2006-12-07 2011-03-15 Novellus Systems, Inc. PECVD methods for producing ultra low-k dielectric films using UV treatment
US20080142483A1 (en) 2006-12-07 2008-06-19 Applied Materials, Inc. Multi-step dep-etch-dep high density plasma chemical vapor deposition processes for dielectric gapfills
US20080202689A1 (en) 2006-12-08 2008-08-28 Tes Co., Ltd. Plasma processing apparatus
JP2008147393A (ja) 2006-12-08 2008-06-26 Toshiba Corp 半導体装置及びその製造方法
US7960236B2 (en) 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US20080173238A1 (en) 2006-12-12 2008-07-24 Hitachi Kokusai Electric Inc. Substrate processing apparatus, method of manufacturing semiconductor device, and reaction vessel
US20080142046A1 (en) 2006-12-13 2008-06-19 Andrew David Johnson Thermal F2 etch process for cleaning CVD chambers
US7378618B1 (en) 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
EP2122687A1 (en) 2006-12-15 2009-11-25 Nxp B.V. Transistor device and method of manufacturing such a transistor device
USD583395S1 (en) 2006-12-15 2008-12-23 Tokyo Electron Limited Cover for a heater stage of a plasma processing apparatus
ATE516127T1 (de) 2006-12-19 2011-07-15 Koninkl Philips Electronics Nv System und verfahren zum erwärmen von objekten in einer produktionslinie
US8178436B2 (en) 2006-12-21 2012-05-15 Intel Corporation Adhesion and electromigration performance at an interface between a dielectric and metal
KR20080058620A (ko) 2006-12-22 2008-06-26 세메스 주식회사 복수 개의 노즐들로 가스를 분할 공급하는 플라즈마 화학기상 증착 설비
JP4553891B2 (ja) 2006-12-27 2010-09-29 シャープ株式会社 半導体層製造方法
DE202006019492U1 (de) 2006-12-27 2007-03-01 Blum, Holger Filter- und Sterilisiervorrichtung
US8120114B2 (en) 2006-12-27 2012-02-21 Intel Corporation Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate
JP2008166360A (ja) 2006-12-27 2008-07-17 Hitachi Ltd 半導体集積回路装置
US7682891B2 (en) 2006-12-28 2010-03-23 Intel Corporation Tunable gate electrode work function material for transistor applications
US8011317B2 (en) 2006-12-29 2011-09-06 Intermolecular, Inc. Advanced mixing system for integrated tool having site-isolated reactors
GB2445188B (en) 2006-12-29 2009-07-01 Thermo Fisher Scientific Inc Apparatus and method for generating nitrogen oxides
KR100877153B1 (ko) 2007-01-09 2009-01-09 한국전자통신연구원 전자소자용 ＺｎＯ 반도체막 형성방법 및 상기 반도체막을포함하는 박막 트랜지스터
JP2008172083A (ja) 2007-01-12 2008-07-24 Sharp Corp 気相成長装置および気相成長方法
US7860379B2 (en) 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
DE102007003416A1 (de) 2007-01-16 2008-07-17 Hansgrohe Ag Duschvorrichtung
JP5108489B2 (ja) 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ プラズマ処理方法
DE102007002962B3 (de) 2007-01-19 2008-07-31 Qimonda Ag Verfahren zum Herstellen einer dielektrischen Schicht und zum Herstellen eines Kondensators
US7725012B2 (en) 2007-01-19 2010-05-25 Asm America, Inc. Movable radiant heat sources
CN101583736A (zh) 2007-01-19 2009-11-18 应用材料股份有限公司 浸没式等离子体室
JP4299863B2 (ja) 2007-01-22 2009-07-22 エルピーダメモリ株式会社 半導体装置の製造方法
JP5109376B2 (ja) 2007-01-22 2012-12-26 東京エレクトロン株式会社 加熱装置、加熱方法及び記憶媒体
US20080191193A1 (en) 2007-01-22 2008-08-14 Xuegeng Li In situ modification of group iv nanoparticles using gas phase nanoparticle reactors
US7550090B2 (en) 2007-01-23 2009-06-23 Applied Materials, Inc. Oxygen plasma clean to remove carbon species deposited on a glass dome surface
US7993457B1 (en) 2007-01-23 2011-08-09 Novellus Systems, Inc. Deposition sub-chamber with variable flow
US7833353B2 (en) 2007-01-24 2010-11-16 Asm Japan K.K. Liquid material vaporization apparatus for semiconductor processing apparatus
US20080173239A1 (en) 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US7598170B2 (en) 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
CN101589459A (zh) 2007-01-26 2009-11-25 应用材料股份有限公司 用于层间介电气隙的pevcd沉积牺牲聚合物薄膜的紫外光固化
JP4564973B2 (ja) 2007-01-26 2010-10-20 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7858898B2 (en) 2007-01-26 2010-12-28 Lam Research Corporation Bevel etcher with gap control
JP4270284B2 (ja) 2007-01-30 2009-05-27 トヨタ自動車株式会社 車輪状態監視システムおよび車輪状態検出装置
US20080179715A1 (en) 2007-01-30 2008-07-31 Micron Technology, Inc. Shallow trench isolation using atomic layer deposition during fabrication of a semiconductor device
US7967996B2 (en) 2007-01-30 2011-06-28 Applied Materials, Inc. Process for wafer backside polymer removal and wafer front side photoresist removal
JP4569638B2 (ja) 2007-01-31 2010-10-27 株式会社デンソー 温度センサ
JP2008192643A (ja) 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
DE102007004867B4 (de) 2007-01-31 2009-07-30 Advanced Micro Devices, Inc., Sunnyvale Verfahren zum Erhöhen der Zuverlässigkeit von kupferbasierten Metallisierungsstrukturen in einem Mikrostrukturbauelement durch Anwenden von Aluminiumnitrid
JP4896899B2 (ja) 2007-01-31 2012-03-14 東京エレクトロン株式会社 基板処理装置およびパーティクル付着防止方法
KR101144497B1 (ko) 2007-02-06 2012-05-11 샌트랄 글래스 컴퍼니 리미티드 저유전율막의 개질제 및 제조방법
JP2008198629A (ja) 2007-02-08 2008-08-28 Mitsubishi Electric Corp 表面処理方法および太陽電池セル
US7959735B2 (en) 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
US8043432B2 (en) 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods
US7851360B2 (en) 2007-02-14 2010-12-14 Intel Corporation Organometallic precursors for seed/barrier processes and methods thereof
US7892964B2 (en) 2007-02-14 2011-02-22 Micron Technology, Inc. Vapor deposition methods for forming a metal-containing layer on a substrate
US7500397B2 (en) 2007-02-15 2009-03-10 Air Products And Chemicals, Inc. Activated chemical process for enhancing material properties of dielectric films
USD576001S1 (en) 2007-02-16 2008-09-02 Brenda Brunderman Faux brick tool
JP4805862B2 (ja) 2007-02-21 2011-11-02 富士通セミコンダクター株式会社 基板処理装置、基板処理方法、及び半導体装置の製造方法
JP2008202107A (ja) 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置
CN101617065B (zh) 2007-02-21 2011-11-23 乔治洛德方法研究和开发液化空气有限公司 在基底上形成钌基薄膜的方法
US7871198B2 (en) 2007-02-26 2011-01-18 Battelle Energy Alliance, Llc High-temperature thermocouples and related methods
US20080207007A1 (en) 2007-02-27 2008-08-28 Air Products And Chemicals, Inc. Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
DE102007009914B4 (de) 2007-02-28 2010-04-22 Advanced Micro Devices, Inc., Sunnyvale Halbleiterbauelement in Form eines Feldeffekttransistors mit einem Zwischenschichtdielektrikumsmaterial mit erhöhter innerer Verspannung und Verfahren zur Herstellung desselben
WO2008106632A2 (en) 2007-03-01 2008-09-04 Applied Materials, Inc. Rf shutter
US20080216077A1 (en) 2007-03-02 2008-09-04 Applied Materials, Inc. Software sequencer for integrated substrate processing system
US20080216958A1 (en) 2007-03-07 2008-09-11 Novellus Systems, Inc. Plasma Reaction Apparatus Having Pre-Seasoned Showerheads and Methods for Manufacturing the Same
US8012259B2 (en) 2007-03-09 2011-09-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US20080220619A1 (en) 2007-03-09 2008-09-11 Asm Japan K.K. Method for increasing mechanical strength of dielectric film by using sequential combination of two types of uv irradiation
US20080223130A1 (en) 2007-03-13 2008-09-18 Provina Incorporated Method and device for measuring density of a liquid
JP4927178B2 (ja) 2007-03-16 2012-05-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 垂直外部共振器形面発光レーザ、及び、その発光部品を製造する方法
US7621672B2 (en) 2007-03-19 2009-11-24 Babcock & Wilcox Technical Services Y-12, Llc Thermocouple shield
US7833913B2 (en) 2007-03-20 2010-11-16 Tokyo Electron Limited Method of forming crystallographically stabilized doped hafnium zirconium based films
US20080230352A1 (en) 2007-03-20 2008-09-25 Yasunari Hirata Conveyer apparatus
US7607647B2 (en) 2007-03-20 2009-10-27 Kla-Tencor Technologies Corporation Stabilizing a substrate using a vacuum preload air bearing chuck
US8298379B2 (en) 2007-03-22 2012-10-30 Tokyo Electron Limited Method and apparatus for extending chamber component life in a substrate processing system
KR20100014501A (ko) 2007-03-22 2010-02-10 파나소닉 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US7763869B2 (en) 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
KR20070041701A (ko) 2007-03-26 2007-04-19 노영환 제습냉난방환기 시스템
US7435987B1 (en) 2007-03-27 2008-10-14 Intel Corporation Forming a type I heterostructure in a group IV semiconductor
JP5034594B2 (ja) 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US7588749B2 (en) 2007-03-29 2009-09-15 Minimus Spine, Inc. Apparatus, method and system for delivering oxygen-ozone
KR101119627B1 (ko) 2007-03-29 2012-03-07 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
US20080241387A1 (en) 2007-03-29 2008-10-02 Asm International N.V. Atomic layer deposition reactor
JP2008251826A (ja) 2007-03-30 2008-10-16 Nec Electronics Corp 半導体装置の製造方法
US20080237604A1 (en) 2007-03-30 2008-10-02 Husam Niman Alshareef Plasma nitrided gate oxide, high-k metal gate based cmos device
US7651961B2 (en) 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
ITMI20070671A1 (it) 2007-04-02 2008-10-03 St Microelectronics Srl Architettura circuitale su base organica e relativo metodo fi realizzazione
US20080241384A1 (en) 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US8235001B2 (en) 2007-04-02 2012-08-07 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
US8242028B1 (en) 2007-04-03 2012-08-14 Novellus Systems, Inc. UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
KR100829759B1 (ko) 2007-04-04 2008-05-15 삼성에스디아이 주식회사 카바이드 유도 탄소를 이용한 카본나노튜브 혼성체, 이를포함하는 전자 방출원 및 상기 전자 방출원을 구비한 전자방출 소자
US20080246101A1 (en) 2007-04-05 2008-10-09 Applied Materials Inc. Method of poly-silicon grain structure formation
US7592212B2 (en) 2007-04-06 2009-09-22 Micron Technology, Inc. Methods for determining a dose of an impurity implanted in a semiconductor substrate
WO2008127935A1 (en) 2007-04-13 2008-10-23 The Board Of Trustees Of The University Of Illinois Metal complex compositions and methods for making metal-containing films
US8740205B2 (en) 2007-04-16 2014-06-03 Ulvac, Inc. Conveyor and deposition apparatus, and maintenance method thereof
WO2008129977A1 (ja) 2007-04-17 2008-10-30 Ulvac, Inc. 成膜装置
US7807579B2 (en) 2007-04-19 2010-10-05 Applied Materials, Inc. Hydrogen ashing enhanced with water vapor and diluent gas
USD562357S1 (en) 2007-04-20 2008-02-19 Alamo Group, Inc. Disk for rotary mower knives
US20080257102A1 (en) 2007-04-20 2008-10-23 William Packer Mechanically retained motorcycle handlebar grips
US8357214B2 (en) 2007-04-26 2013-01-22 Trulite, Inc. Apparatus, system, and method for generating a gas from solid reactant pouches
JP4853374B2 (ja) 2007-04-27 2012-01-11 東京エレクトロン株式会社 塗布、現像装置及びその方法並びに記憶媒体
US7575968B2 (en) 2007-04-30 2009-08-18 Freescale Semiconductor, Inc. Inverse slope isolation and dual surface orientation integration
US7713874B2 (en) 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
KR100894098B1 (ko) 2007-05-03 2009-04-20 주식회사 하이닉스반도체 빠른 소거속도 및 향상된 리텐션 특성을 갖는 불휘발성메모리소자 및 그 제조방법
US20110067522A1 (en) 2007-05-08 2011-03-24 Lai Ching-Chuan Bicycle handlebar grip
US8057601B2 (en) 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
DE102007022431A1 (de) 2007-05-09 2008-11-13 Leybold Optics Gmbh Behandlungssystem für flache Substrate
US8110099B2 (en) 2007-05-09 2012-02-07 Contech Stormwater Solutions Inc. Stormwater filter assembly
JP2009024252A (ja) 2007-05-15 2009-02-05 Applied Materials Inc タングステン材料の原子層堆積法
JP5103056B2 (ja) 2007-05-15 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US7750429B2 (en) 2007-05-15 2010-07-06 International Business Machines Corporation Self-aligned and extended inter-well isolation structure
GB0709723D0 (en) 2007-05-22 2007-06-27 Goodrich Control Sys Ltd Temperature sensing
JP4898556B2 (ja) 2007-05-23 2012-03-14 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20080289650A1 (en) 2007-05-24 2008-11-27 Asm America, Inc. Low-temperature cleaning of native oxide
US7874726B2 (en) 2007-05-24 2011-01-25 Asm America, Inc. Thermocouple
US20080299326A1 (en) 2007-05-30 2008-12-04 Asm Japan K.K. Plasma cvd apparatus having non-metal susceptor
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
CN103862463B (zh) 2007-05-31 2017-08-15 应用材料公司 延伸双scara机械手连接装置的伸出距离的方法及设备
US7807578B2 (en) 2007-06-01 2010-10-05 Applied Materials, Inc. Frequency doubling using spacer mask
US20090017631A1 (en) 2007-06-01 2009-01-15 Bencher Christopher D Self-aligned pillar patterning using multiple spacer masks
US8084352B2 (en) 2007-06-04 2011-12-27 Panasonic Corporation Method of manufacturing semiconductor device
US7781352B2 (en) 2007-06-06 2010-08-24 Asm Japan K.K. Method for forming inorganic silazane-based dielectric film
US8142606B2 (en) 2007-06-07 2012-03-27 Applied Materials, Inc. Apparatus for depositing a uniform silicon film and methods for manufacturing the same
US20080302303A1 (en) 2007-06-07 2008-12-11 Applied Materials, Inc. Methods and apparatus for depositing a uniform silicon film with flow gradient designs
US7955650B2 (en) 2007-06-07 2011-06-07 Asm Japan K.K. Method for forming dielectric film using porogen gas
US20080305014A1 (en) 2007-06-07 2008-12-11 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US7989354B2 (en) 2007-06-08 2011-08-02 Tokyo Electron Limited Patterning method
KR101011490B1 (ko) 2007-06-08 2011-01-31 도쿄엘렉트론가부시키가이샤 패터닝 방법
JP4427562B2 (ja) 2007-06-11 2010-03-10 株式会社東芝 パターン形成方法
US20080303744A1 (en) 2007-06-11 2008-12-11 Tokyo Electron Limited Plasma processing system, antenna, and use of plasma processing system
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
US20080314319A1 (en) 2007-06-19 2008-12-25 Memc Electronic Materials, Inc. Susceptor for improving throughput and reducing wafer damage
USD575713S1 (en) 2007-06-21 2008-08-26 Ratcliffe Peter W Vehicle accessory
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
CN100590804C (zh) 2007-06-22 2010-02-17 中芯国际集成电路制造(上海)有限公司 原子层沉积方法以及形成的半导体器件
US20080314892A1 (en) 2007-06-25 2008-12-25 Graham Robert G Radiant shield
US20090004875A1 (en) 2007-06-27 2009-01-01 Meihua Shen Methods of trimming amorphous carbon film for forming ultra thin structures on a substrate
US8905124B2 (en) 2007-06-27 2014-12-09 Taiwan Semiconductor Manufacturing Company, Ltd. Temperature controlled loadlock chamber
KR101593352B1 (ko) 2007-06-28 2016-02-15 인티그리스, 인코포레이티드 이산화규소 간극 충전용 전구체
US20090000550A1 (en) 2007-06-29 2009-01-01 Applied Materials, Inc. Manifold assembly
TW200903625A (en) 2007-07-04 2009-01-16 Advanced Micro Fab Equip Inc Multi-station decoupled reactive ion etch chamber
US20090033907A1 (en) 2007-07-05 2009-02-05 Nikon Corporation Devices and methods for decreasing residual chucking forces
JP2009016672A (ja) 2007-07-06 2009-01-22 Tokyo Electron Ltd 半導体装置の製造方法、半導体装置、半導体製造装置及び記憶媒体。
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US8021514B2 (en) 2007-07-11 2011-09-20 Applied Materials, Inc. Remote plasma source for pre-treatment of substrates prior to deposition
US8322533B2 (en) 2007-07-11 2012-12-04 Shin-Etsu Polymer Co., Ltd. Lid body for substrate storage container and substrate storage container
KR101275025B1 (ko) 2007-07-12 2013-06-14 삼성전자주식회사 반도체 소자용 배선 구조물 및 이의 형성방법
US7501292B2 (en) 2007-07-19 2009-03-10 Asm Japan K.K. Method for managing UV irradiation for curing semiconductor substrate
US7651269B2 (en) 2007-07-19 2010-01-26 Lam Research Corporation Temperature probes having a thermally isolated tip
JP4900110B2 (ja) 2007-07-20 2012-03-21 東京エレクトロン株式会社 薬液気化タンク及び薬液処理システム
US8008166B2 (en) 2007-07-26 2011-08-30 Applied Materials, Inc. Method and apparatus for cleaning a substrate surface
US7720560B2 (en) 2007-07-26 2010-05-18 International Business Machines Corporation Semiconductor manufacturing process monitoring
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
JP5058084B2 (ja) 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
USD596476S1 (en) 2007-07-27 2009-07-21 Daniel P. Welch Handle bar grip
US8980756B2 (en) 2007-07-30 2015-03-17 Micron Technology, Inc. Methods for device fabrication using pitch reduction
US7910497B2 (en) 2007-07-30 2011-03-22 Applied Materials, Inc. Method of forming dielectric layers on a substrate and apparatus therefor
US20090035946A1 (en) 2007-07-31 2009-02-05 Asm International N.V. In situ deposition of different metal-containing films using cyclopentadienyl metal precursors
US8367227B2 (en) 2007-08-02 2013-02-05 Applied Materials, Inc. Plasma-resistant ceramics with controlled electrical resistivity
US8021968B2 (en) 2007-08-03 2011-09-20 Shin-Etsu Handotai Co., Ltd. Susceptor and method for manufacturing silicon epitaxial wafer
US20090035463A1 (en) 2007-08-03 2009-02-05 Tokyo Electron Limited Thermal processing system and method for forming an oxide layer on substrates
JP2009044023A (ja) 2007-08-10 2009-02-26 Hitachi Kokusai Electric Inc 半導体装置の製造方法および基板処理装置
WO2009023169A1 (en) 2007-08-10 2009-02-19 Nano Terra Inc. Structured smudge-resistant coatings and methods of making and using the same
US20090041952A1 (en) 2007-08-10 2009-02-12 Asm Genitech Korea Ltd. Method of depositing silicon oxide films
TWI405295B (zh) 2007-08-13 2013-08-11 Advanced Display Proc Eng Co 基板處理裝置及方法
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
GB0715854D0 (en) 2007-08-15 2007-09-26 Enigma Diagnostics Ltd Apparatus and method for calibration of non-contact thermal sensors
JP5514413B2 (ja) 2007-08-17 2014-06-04 東京エレクトロン株式会社 プラズマエッチング方法
KR20090018290A (ko) 2007-08-17 2009-02-20 에이에스엠지니텍코리아 주식회사 증착 장치
US20090052498A1 (en) 2007-08-24 2009-02-26 Asm America, Inc. Thermocouple
US8084372B2 (en) 2007-08-24 2011-12-27 Tokyo Electron Limited Substrate processing method and computer storage medium
US7745352B2 (en) 2007-08-27 2010-06-29 Applied Materials, Inc. Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process
US20100252434A1 (en) 2007-08-28 2010-10-07 University Of Florida Research Foundation, Inc. Bio-Sensor Using Gated Electrokinetic Transport
WO2009028619A1 (ja) 2007-08-30 2009-03-05 Tokyo Electron Limited 処理ガス供給システム及び処理装置
JP2009076881A (ja) 2007-08-30 2009-04-09 Tokyo Electron Ltd 処理ガス供給システム及び処理装置
US8962101B2 (en) 2007-08-31 2015-02-24 Novellus Systems, Inc. Methods and apparatus for plasma-based deposition
JP2009060035A (ja) 2007-09-03 2009-03-19 Shinko Electric Ind Co Ltd 静電チャック部材、その製造方法及び静電チャック装置
US7831135B2 (en) 2007-09-04 2010-11-09 Sokudo Co., Ltd. Method and system for controlling bake plate temperature in a semiconductor processing chamber
US7879250B2 (en) 2007-09-05 2011-02-01 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US8334015B2 (en) 2007-09-05 2012-12-18 Intermolecular, Inc. Vapor based combinatorial processing
JP5663305B2 (ja) 2007-09-07 2015-02-04 フジフィルム マニュファクチュアリング ヨーロッパ ビー．ヴィ． 大気圧グロー放電プラズマを用いる原子層堆積の方法及び装置
CA122619S (en) 2007-10-09 2010-01-27 Silvano Breda Shower strainer
JP5347294B2 (ja) 2007-09-12 2013-11-20 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
US20090075491A1 (en) 2007-09-13 2009-03-19 Tokyo Electron Limited Method for curing a dielectric film
EP2193541A1 (en) 2007-09-18 2010-06-09 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method of forming silicon-containing films
JP4986784B2 (ja) 2007-09-18 2012-07-25 東京エレクトロン株式会社 処理システムの制御装置、処理システムの制御方法および制御プログラムを記憶した記憶媒体
US20120122319A1 (en) 2007-09-19 2012-05-17 Hironobu Shimizu Coating method for coating reaction tube prior to film forming process
JP2009076661A (ja) 2007-09-20 2009-04-09 Elpida Memory Inc 半導体装置の製造方法
JP2009081223A (ja) 2007-09-26 2009-04-16 Tokyo Electron Ltd 静電チャック部材
JP2009087989A (ja) 2007-09-27 2009-04-23 Nuflare Technology Inc エピタキシャル成長膜形成方法
US7824743B2 (en) 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20090084317A1 (en) 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
JP5236983B2 (ja) 2007-09-28 2013-07-17 東京エレクトロン株式会社 半導体装置の製造方法、半導体装置の製造装置、制御プログラム及びプログラム記憶媒体
US20090085156A1 (en) 2007-09-28 2009-04-02 Gilbert Dewey Metal surface treatments for uniformly growing dielectric layers
JP2009088421A (ja) 2007-10-03 2009-04-23 Renesas Technology Corp 半導体装置の製造方法
US8041450B2 (en) 2007-10-04 2011-10-18 Asm Japan K.K. Position sensor system for substrate transfer robot
US20090090382A1 (en) 2007-10-05 2009-04-09 Asm Japan K.K. Method of self-cleaning of carbon-based film
US7776698B2 (en) 2007-10-05 2010-08-17 Applied Materials, Inc. Selective formation of silicon carbon epitaxial layer
US20090093100A1 (en) 2007-10-09 2009-04-09 Li-Qun Xia Method for forming an air gap in multilevel interconnect structure
US8778079B2 (en) 2007-10-11 2014-07-15 Valence Process Equipment, Inc. Chemical vapor deposition reactor
US20090095221A1 (en) 2007-10-16 2009-04-16 Alexander Tam Multi-gas concentric injection showerhead
CN101828260A (zh) 2007-10-18 2010-09-08 Nxp股份有限公司 在体半导体晶片中制造局域化绝缘体上半导体(soi)结构的方法
KR101399117B1 (ko) 2007-10-19 2014-05-28 주성엔지니어링(주) 원격 플라즈마를 이용한 기판 식각장치 및 이를 이용한기판 식각방법
US7803722B2 (en) 2007-10-22 2010-09-28 Applied Materials, Inc Methods for forming a dielectric layer within trenches
US7541297B2 (en) 2007-10-22 2009-06-02 Applied Materials, Inc. Method and system for improving dielectric film quality for void free gap fill
US7867923B2 (en) 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
US8070880B2 (en) 2007-10-22 2011-12-06 Hitachi Kokusai Electric, Inc. Substrate processing apparatus
US7939447B2 (en) 2007-10-26 2011-05-10 Asm America, Inc. Inhibitors for selective deposition of silicon containing films
US7615831B2 (en) 2007-10-26 2009-11-10 International Business Machines Corporation Structure and method for fabricating self-aligned metal contacts
JP4730369B2 (ja) 2007-10-30 2011-07-20 株式会社デンソー ナビゲーションシステム
KR101369907B1 (ko) 2007-10-31 2014-03-04 주성엔지니어링(주) 트랜지스터 및 그 제조 방법
RU2470065C2 (ru) 2007-10-31 2012-12-20 Чайна Петролеум & Кемикал Корпорейшн Способ пассивации для установки непрерывного риформинга (варианты)
US7737039B2 (en) 2007-11-01 2010-06-15 Micron Technology, Inc. Spacer process for on pitch contacts and related structures
JP5192214B2 (ja) 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films
KR20090047211A (ko) 2007-11-07 2009-05-12 삼성전자주식회사 도전 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조방법
US20090124131A1 (en) 2007-11-09 2009-05-14 Electronic Controls Design Thermocouple adapter
KR101203038B1 (ko) 2007-11-14 2012-11-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 반도체 기판의 플라즈마 처리 방법
US20090122458A1 (en) 2007-11-14 2009-05-14 Varian Semiconductor Epuipment Associated, Inc. Embossed electrostatic chuck
US8272516B2 (en) 2007-11-19 2012-09-25 Caterpillar Inc. Fluid filter system
CA123273S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
CA123272S (en) 2007-11-19 2010-01-27 Silvano Breda Shower strainer
KR101412144B1 (ko) 2007-11-26 2014-06-26 삼성전자 주식회사 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법
EP2065927B1 (en) 2007-11-27 2013-10-02 Imec Integration and manufacturing method of Cu germanide and Cu silicide as Cu capping layer
US8282735B2 (en) 2007-11-27 2012-10-09 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
US8021723B2 (en) 2007-11-27 2011-09-20 Asm Japan K.K. Method of plasma treatment using amplitude-modulated RF power
KR20090055443A (ko) 2007-11-28 2009-06-02 주식회사 케이씨텍 원자층 증착 장치
JP5314700B2 (ja) 2007-11-28 2013-10-16 コーニンクレッカ フィリップス エヌ ヴェ 誘電バリア放電ランプ
US7967912B2 (en) 2007-11-29 2011-06-28 Nuflare Technology, Inc. Manufacturing apparatus for semiconductor device and manufacturing method for semiconductor device
US8060252B2 (en) 2007-11-30 2011-11-15 Novellus Systems, Inc. High throughput method of in transit wafer position correction in system using multiple robots
KR20090056475A (ko) 2007-11-30 2009-06-03 삼성전자주식회사 플라즈마 처리장치
JP5464843B2 (ja) 2007-12-03 2014-04-09 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US7651959B2 (en) 2007-12-03 2010-01-26 Asm Japan K.K. Method for forming silazane-based dielectric film
US20090139657A1 (en) 2007-12-04 2009-06-04 Applied Materials, Inc. Etch system
WO2009072252A1 (ja) 2007-12-06 2009-06-11 Shin-Etsu Handotai Co., Ltd. 気相成長用サセプタおよび気相成長装置
US8440569B2 (en) 2007-12-07 2013-05-14 Cadence Design Systems, Inc. Method of eliminating a lithography operation
US7807566B2 (en) 2007-12-07 2010-10-05 Asm Japan K.K. Method for forming dielectric SiOCH film having chemical stability
US8047706B2 (en) 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
US8003174B2 (en) 2007-12-13 2011-08-23 Asm Japan K.K. Method for forming dielectric film using siloxane-silazane mixture
KR100956247B1 (ko) 2007-12-13 2010-05-06 삼성엘이디 주식회사 금속유기 화학기상 증착장치
FI123322B (fi) 2007-12-17 2013-02-28 Beneq Oy Menetelmä ja laitteisto plasman muodostamiseksi
WO2009078249A1 (ja) 2007-12-17 2009-06-25 Orc Manufacturing Co., Ltd. 放電ランプ
US20090155488A1 (en) 2007-12-18 2009-06-18 Asm Japan K.K. Shower plate electrode for plasma cvd reactor
US8092606B2 (en) 2007-12-18 2012-01-10 Asm Genitech Korea Ltd. Deposition apparatus
US8137463B2 (en) 2007-12-19 2012-03-20 Applied Materials, Inc. Dual zone gas injection nozzle
US20090159002A1 (en) 2007-12-19 2009-06-25 Kallol Bera Gas distribution plate with annular plenum having a sloped ceiling for uniform distribution
CN102089861B (zh) 2007-12-19 2013-03-27 朗姆研究公司 低k电介质材料的汽相修复和孔密封
US7993057B2 (en) 2007-12-20 2011-08-09 Asm America, Inc. Redundant temperature sensor for semiconductor processing chambers
US7989329B2 (en) 2007-12-21 2011-08-02 Applied Materials, Inc. Removal of surface dopants from a substrate
JP3140111U (ja) 2007-12-21 2008-03-13 日本エー・エス・エム株式会社 半導体製造装置用ガス供給装置
US8129029B2 (en) 2007-12-21 2012-03-06 Applied Materials, Inc. Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating
US7678715B2 (en) 2007-12-21 2010-03-16 Applied Materials, Inc. Low wet etch rate silicon nitride film
US8501637B2 (en) 2007-12-21 2013-08-06 Asm International N.V. Silicon dioxide thin films by ALD
KR101573954B1 (ko) 2007-12-21 2015-12-02 램 리써치 코포레이션 포토레지스트 더블 패터닝
WO2009082763A2 (en) 2007-12-25 2009-07-02 Applied Materials, Inc. Method and apparatus for controlling plasma uniformity
JP5291928B2 (ja) 2007-12-26 2013-09-18 株式会社日立製作所 酸化物半導体装置およびその製造方法
KR101444873B1 (ko) 2007-12-26 2014-09-26 주성엔지니어링(주) 기판처리장치
US8333839B2 (en) 2007-12-27 2012-12-18 Synos Technology, Inc. Vapor deposition reactor
WO2009086042A2 (en) 2007-12-27 2009-07-09 Lam Research Corporation Arrangements and methods for determining positions and offsets
US20090165721A1 (en) 2007-12-27 2009-07-02 Memc Electronic Materials, Inc. Susceptor with Support Bosses
KR100936694B1 (ko) 2007-12-27 2010-01-13 주식회사 케이씨텍 플라즈마 발생부를 구비하는 원자층 증착 장치
JP5374039B2 (ja) 2007-12-27 2013-12-25 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US8496377B2 (en) 2007-12-31 2013-07-30 Covidien Lp Thermometer having molded probe component
KR101013413B1 (ko) 2008-01-07 2011-02-14 한국과학기술연구원 플라즈마 표면 처리를 이용한 투명 기체 차단 필름의 제조방법 및 이로부터 제조된 투명 기체 차단 필름
US7935940B1 (en) 2008-01-08 2011-05-03 Novellus Systems, Inc. Measuring in-situ UV intensity in UV cure tool
US20090176018A1 (en) 2008-01-09 2009-07-09 Min Zou Nano/micro-textured surfaces and methods of making same by aluminum-induced crystallization of amorphous silicon
US8129288B2 (en) 2008-05-02 2012-03-06 Intermolecular, Inc. Combinatorial plasma enhanced deposition techniques
US8198567B2 (en) 2008-01-15 2012-06-12 Applied Materials, Inc. High temperature vacuum chuck assembly
US20110049100A1 (en) 2008-01-16 2011-03-03 Charm Engineering Co., Ltd. Substrate holder, substrate supporting apparatus, substrate processing apparatus, and substrate processing method using the same
JP5200551B2 (ja) 2008-01-18 2013-06-05 東京エレクトロン株式会社 気化原料供給装置、成膜装置及び気化原料供給方法
US20090186571A1 (en) 2008-01-22 2009-07-23 Asm America, Inc. Air ventilation system
KR20100106608A (ko) 2008-01-31 2010-10-01 어플라이드 머티어리얼스, 인코포레이티드 폐쇄 회로 ｍｏｃｖｄ 증착 제어
US9103019B2 (en) 2008-02-01 2015-08-11 American Air Liquide, Inc. Metal precursors containing beta-diketiminato ligands
US20090203197A1 (en) 2008-02-08 2009-08-13 Hiroji Hanawa Novel method for conformal plasma immersed ion implantation assisted by atomic layer deposition
US7855153B2 (en) 2008-02-08 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR100988390B1 (ko) 2008-02-11 2010-10-18 성균관대학교산학협력단 기판처리장치 및 기판처리방법
US20090200494A1 (en) 2008-02-11 2009-08-13 Varian Semiconductor Equipment Associates, Inc. Techniques for cold implantation of carbon-containing species
KR101362811B1 (ko) 2008-02-11 2014-02-14 (주)소슬 배치식 기판 지지 장치 및 이를 구비하는 기판 처리 장치
KR101043211B1 (ko) 2008-02-12 2011-06-22 신웅철 배치형 원자층 증착 장치
GB0802486D0 (en) 2008-02-12 2008-03-19 Gilbert Patrick C Warm water economy device
US7795045B2 (en) 2008-02-13 2010-09-14 Icemos Technology Ltd. Trench depth monitor for semiconductor manufacturing
US20090206056A1 (en) 2008-02-14 2009-08-20 Songlin Xu Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers
JP2009194248A (ja) 2008-02-15 2009-08-27 Tokyo Electron Ltd パターン形成方法、半導体製造装置及び記憶媒体
KR101204614B1 (ko) 2008-02-20 2012-11-23 도쿄엘렉트론가부시키가이샤 가스 공급 장치, 성막 장치, 및 성막 방법
US20090214777A1 (en) 2008-02-22 2009-08-27 Demetrius Sarigiannis Multiple ampoule delivery systems
US20090214825A1 (en) 2008-02-26 2009-08-27 Applied Materials, Inc. Ceramic coating comprising yttrium which is resistant to a reducing plasma
US9263298B2 (en) 2008-02-27 2016-02-16 Tokyo Electron Limited Plasma etching apparatus and plasma etching method
US8273178B2 (en) 2008-02-28 2012-09-25 Asm Genitech Korea Ltd. Thin film deposition apparatus and method of maintaining the same
US20090221149A1 (en) 2008-02-28 2009-09-03 Hammond Iv Edward P Multiple port gas injection system utilized in a semiconductor processing system
US20090302002A1 (en) 2008-02-29 2009-12-10 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
JP5223377B2 (ja) 2008-02-29 2013-06-26 東京エレクトロン株式会社 プラズマ処理装置用の電極、プラズマ処理装置及びプラズマ処理方法
KR100968132B1 (ko) 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
US7727866B2 (en) 2008-03-05 2010-06-01 Varian Semiconductor Equipment Associates, Inc. Use of chained implants in solar cells
US7858533B2 (en) 2008-03-06 2010-12-28 Tokyo Electron Limited Method for curing a porous low dielectric constant dielectric film
US7977256B2 (en) 2008-03-06 2011-07-12 Tokyo Electron Limited Method for removing a pore-generating material from an uncured low-k dielectric film
USD585968S1 (en) 2008-03-06 2009-02-03 West Coast Washers, Inc. Pipe flashing
EP2099067A1 (en) 2008-03-07 2009-09-09 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Process for adjusting the friction coefficient between surfaces of two solid objects
JP5507097B2 (ja) 2008-03-12 2014-05-28 富士フイルム株式会社 ペロブスカイト型酸化物とその製造方法、圧電体、圧電素子、液体吐出装置
JP5188849B2 (ja) 2008-03-14 2013-04-24 Ｓｐｐテクノロジーズ株式会社 プラズマ処理装置
GB2458507A (en) 2008-03-20 2009-09-23 Tecvac Ltd Oxidation of non ferrous metal components
US7695619B2 (en) 2008-03-21 2010-04-13 Pentair Filtration, Inc. Modular drinking water filtration system with adapter rings for replaceable cartridges to assure proper fit
WO2009117612A2 (en) 2008-03-21 2009-09-24 Applied Materials, Inc. Shielded lid heater assembly
US8430620B1 (en) 2008-03-24 2013-04-30 Novellus Systems, Inc. Dedicated hot and cold end effectors for improved throughput
GB0805328D0 (en) 2008-03-25 2008-04-30 Aviza Technologies Ltd Deposition of an amorphous layer
JP2009239082A (ja) 2008-03-27 2009-10-15 Tokyo Electron Ltd ガス供給装置、処理装置及び処理方法
US20090246399A1 (en) 2008-03-28 2009-10-01 Asm Japan K.K. Method for activating reactive oxygen species for cleaning carbon-based film deposition
US7816278B2 (en) 2008-03-28 2010-10-19 Tokyo Electron Limited In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition
US8252114B2 (en) 2008-03-28 2012-08-28 Tokyo Electron Limited Gas distribution system and method for distributing process gas in a processing system
USD590933S1 (en) 2008-03-31 2009-04-21 Mcp Industries, Inc. Vent cap device
US7659158B2 (en) 2008-03-31 2010-02-09 Applied Materials, Inc. Atomic layer deposition processes for non-volatile memory devices
US20100078601A1 (en) 2008-03-31 2010-04-01 American Air Liquide, Inc. Preparation of Lanthanide-Containing Precursors and Deposition of Lanthanide-Containing Films
JP2009252851A (ja) 2008-04-02 2009-10-29 Nikon Corp 露光装置及びデバイス製造方法
US7963736B2 (en) 2008-04-03 2011-06-21 Asm Japan K.K. Wafer processing apparatus with wafer alignment device
JP5559036B2 (ja) 2008-04-04 2014-07-23 株式会社ダイセル フォトレジスト用ポリオール化合物
JP5007827B2 (ja) 2008-04-04 2012-08-22 信越化学工業株式会社 ダブルパターン形成方法
US20090250955A1 (en) 2008-04-07 2009-10-08 Applied Materials, Inc. Wafer transfer blade
US8193388B2 (en) 2008-04-15 2012-06-05 American Air Liquide, Inc. Compounds for depositing tellurium-containing films
JP5551681B2 (ja) 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
US8110453B2 (en) 2008-04-17 2012-02-07 Applied Materials, Inc. Low temperature thin film transistor process, device property, and device stability improvement
KR100971414B1 (ko) 2008-04-18 2010-07-21 주식회사 하이닉스반도체 스트레인드 채널을 갖는 반도체 소자 및 그 제조방법
US8741062B2 (en) 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
WO2009131902A2 (en) 2008-04-23 2009-10-29 Intermolecular, Inc. Yttrium and titanium high-k dielectric films
US20090269506A1 (en) 2008-04-24 2009-10-29 Seiji Okura Method and apparatus for cleaning of a CVD reactor
US8383525B2 (en) 2008-04-25 2013-02-26 Asm America, Inc. Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
KR101596698B1 (ko) 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
JP5253875B2 (ja) 2008-04-28 2013-07-31 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
TWI491657B (zh) 2008-04-28 2015-07-11 Basf Se 可由雙聚合得到之低ｋ介電質
US20090269507A1 (en) 2008-04-29 2009-10-29 Sang-Ho Yu Selective cobalt deposition on copper surfaces
US8252194B2 (en) 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
US7632549B2 (en) 2008-05-05 2009-12-15 Asm Japan K.K. Method of forming a high transparent carbon film
FR2930900B1 (fr) 2008-05-06 2010-09-10 Commissariat Energie Atomique Dispositif de separation de biomolecules d'un fluide
US20090280248A1 (en) 2008-05-06 2009-11-12 Asm America, Inc. Porous substrate holder with thinned portions
US20090277874A1 (en) 2008-05-09 2009-11-12 Applied Materials, Inc. Method and apparatus for removing polymer from a substrate
US8076237B2 (en) 2008-05-09 2011-12-13 Asm America, Inc. Method and apparatus for 3D interconnect
US8277670B2 (en) 2008-05-13 2012-10-02 Lam Research Corporation Plasma process with photoresist mask pretreatment
US20090286402A1 (en) 2008-05-13 2009-11-19 Applied Materials, Inc Method for critical dimension shrink using conformal pecvd films
WO2009140371A2 (en) 2008-05-14 2009-11-19 Applied Materials, Inc. Method and apparatus for pulsed plasma processing using a time resolved tuning scheme for rf power delivery
US8333842B2 (en) 2008-05-15 2012-12-18 Applied Materials, Inc. Apparatus for etching semiconductor wafers
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US7514058B1 (en) 2008-05-22 2009-04-07 The Lata Group, Inc. Apparatus for on-site production of nitrate ions
US10041169B2 (en) 2008-05-27 2018-08-07 Picosun Oy System and method for loading a substrate holder carrying a batch of vertically placed substrates into an atomic layer deposition reactor
US8945675B2 (en) 2008-05-29 2015-02-03 Asm International N.V. Methods for forming conductive titanium oxide thin films
EP2128299B1 (en) 2008-05-29 2016-12-28 General Electric Technology GmbH Multilayer thermal barrier coating
US7622369B1 (en) 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
US20090297731A1 (en) 2008-05-30 2009-12-03 Asm Japan K.K. Apparatus and method for improving production throughput in cvd chamber
US8298628B2 (en) 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
US20110056513A1 (en) 2008-06-05 2011-03-10 Axel Hombach Method for treating surfaces, lamp for said method, and irradiation system having said lamp
CN102057077B (zh) 2008-06-05 2013-11-13 乔治洛德方法研究和开发液化空气有限公司 含镧系元素的前体的制备和含镧系元素的薄膜的沉积
JP2009295932A (ja) 2008-06-09 2009-12-17 Canon Inc 露光装置及びデバイス製造方法
JP5421551B2 (ja) 2008-06-11 2014-02-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7915667B2 (en) 2008-06-11 2011-03-29 Qimonda Ag Integrated circuits having a contact region and methods for manufacturing the same
US20090308315A1 (en) 2008-06-13 2009-12-17 Asm International N.V. Semiconductor processing apparatus with improved thermal characteristics and method for providing the same
US7946762B2 (en) 2008-06-17 2011-05-24 Asm America, Inc. Thermocouple
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
CN102047388A (zh) 2008-06-20 2011-05-04 应用材料股份有限公司 气体分布喷头裙部
CN101609858B (zh) 2008-06-20 2011-06-22 福建钧石能源有限公司 薄膜沉积方法
US8827695B2 (en) 2008-06-23 2014-09-09 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer's ambiance control
US8726837B2 (en) 2008-06-23 2014-05-20 Applied Materials, Inc. Semiconductor process chamber vision and monitoring system
US20090314208A1 (en) 2008-06-24 2009-12-24 Applied Materials, Inc. Pedestal heater for low temperature pecvd application
KR101036605B1 (ko) 2008-06-30 2011-05-24 세메스 주식회사 기판 지지 유닛 및 이를 이용한 매엽식 기판 연마 장치
US20090325391A1 (en) 2008-06-30 2009-12-31 Asm International Nv Ozone and teos process for silicon oxide deposition
US8291857B2 (en) 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
US8206506B2 (en) 2008-07-07 2012-06-26 Lam Research Corporation Showerhead electrode
US8702867B2 (en) 2008-07-08 2014-04-22 Jusung Engineering Co., Ltd. Gas distribution plate and substrate treating apparatus including the same
JP2010021204A (ja) 2008-07-08 2010-01-28 Toshiba Corp 半導体装置及びその製造方法
US8800484B2 (en) 2008-07-09 2014-08-12 Tokyo Electron Limited Plasma processing apparatus
US20100012036A1 (en) 2008-07-11 2010-01-21 Hugo Silva Isolation for multi-single-wafer processing apparatus
US8111978B2 (en) 2008-07-11 2012-02-07 Applied Materials, Inc. Rapid thermal processing chamber with shower head
US8058138B2 (en) 2008-07-17 2011-11-15 Micron Technology, Inc. Gap processing
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
USD614593S1 (en) 2008-07-21 2010-04-27 Asm Genitech Korea Ltd Substrate support for a semiconductor deposition apparatus
USD609652S1 (en) 2008-07-22 2010-02-09 Tokyo Electron Limited Wafer attracting plate
KR20100015213A (ko) 2008-08-04 2010-02-12 삼성전기주식회사 Ｃｖｄ용 샤워 헤드 및 이를 구비하는 화학 기상 증착 장치
KR101482944B1 (ko) 2008-08-04 2015-01-16 한국과학기술원 산화티타늄을 활성층으로 갖는 박막 트랜지스터의 제조방법 및 이에 의해 제조된 박막 트랜지스터
US20100025796A1 (en) 2008-08-04 2010-02-04 Amir Massoud Dabiran Microchannel plate photocathode
US20100034719A1 (en) 2008-08-06 2010-02-11 Christian Dussarrat Novel lanthanide beta-diketonate precursors for lanthanide thin film deposition
US8047711B2 (en) 2008-08-06 2011-11-01 Heinz Ploechinger Thermocouple vacuum gauge
US8394229B2 (en) 2008-08-07 2013-03-12 Asm America, Inc. Susceptor ring
USD600223S1 (en) 2008-08-07 2009-09-15 Ravinder Aggarwal Susceptor ring
US8328585B2 (en) 2008-08-07 2012-12-11 Texas Instruments Incorporated Modulated deposition process for stress control in thick TiN films
CN102160188B (zh) 2008-08-08 2016-10-26 康奈尔研究基金会股份有限公司 无机体相多结材料及其制备方法
US8129555B2 (en) 2008-08-12 2012-03-06 Air Products And Chemicals, Inc. Precursors for depositing silicon-containing films and methods for making and using same
JP5338335B2 (ja) 2008-08-13 2013-11-13 東京エレクトロン株式会社 搬送容器の開閉装置及びプローブ装置
US8470718B2 (en) 2008-08-13 2013-06-25 Synos Technology, Inc. Vapor deposition reactor for forming thin film
US8263502B2 (en) 2008-08-13 2012-09-11 Synos Technology, Inc. Forming substrate structure by filling recesses with deposition material
KR101017170B1 (ko) 2008-08-13 2011-02-25 주식회사 동부하이텍 백 메탈 공정챔버
US7816218B2 (en) 2008-08-14 2010-10-19 Intel Corporation Selective deposition of amorphous silicon films on metal gates
US8147648B2 (en) 2008-08-15 2012-04-03 Lam Research Corporation Composite showerhead electrode assembly for a plasma processing apparatus
JP4866402B2 (ja) 2008-08-25 2012-02-01 独立行政法人科学技術振興機構 化学蒸着方法
JP5593472B2 (ja) 2008-08-27 2014-09-24 株式会社日立国際電気 基板処理装置および半導体デバイスの製造方法
JP5188326B2 (ja) 2008-08-28 2013-04-24 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、及び基板処理装置
US8084104B2 (en) 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100055318A1 (en) 2008-08-29 2010-03-04 Veeco Instruments Inc. Wafer carrier with varying thermal resistance
US20100055442A1 (en) 2008-09-03 2010-03-04 International Business Machines Corporation METHOD OF PE-ALD OF SiNxCy AND INTEGRATION OF LINER MATERIALS ON POROUS LOW K SUBSTRATES
TW201011861A (en) 2008-09-04 2010-03-16 Nanya Technology Corp Method for fabricating integrated circuit
JP2010087467A (ja) 2008-09-04 2010-04-15 Tokyo Electron Ltd 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5107185B2 (ja) 2008-09-04 2012-12-26 東京エレクトロン株式会社 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体
JP5276388B2 (ja) 2008-09-04 2013-08-28 東京エレクトロン株式会社 成膜装置及び基板処理装置
CN102150251B (zh) 2008-09-08 2013-06-19 芝浦机械电子株式会社 基板处理装置及基板处理方法
JP5226438B2 (ja) 2008-09-10 2013-07-03 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
USD643055S1 (en) 2008-09-11 2011-08-09 Asm Japan K.K. Heater block for use in a semiconductor processing tool
JP5511273B2 (ja) 2008-09-12 2014-06-04 株式会社日立国際電気 基板処理装置及び基板処理方法
US8731706B2 (en) 2008-09-12 2014-05-20 Hitachi High-Technologies Corporation Vacuum processing apparatus
US20100065758A1 (en) 2008-09-16 2010-03-18 Tokyo Electron Limited Dielectric material treatment system and method of operating
JP2010073822A (ja) 2008-09-17 2010-04-02 Tokyo Electron Ltd 成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100075488A1 (en) 2008-09-19 2010-03-25 Applied Materials, Inc. Cvd reactor with multiple processing levels and dual-axis motorized lift mechanism
US9711373B2 (en) 2008-09-22 2017-07-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating a gate dielectric for high-k metal gate devices
US20100075037A1 (en) 2008-09-22 2010-03-25 Marsh Eugene P Deposition Systems, ALD Systems, CVD Systems, Deposition Methods, ALD Methods and CVD Methods
JP2010077508A (ja) 2008-09-26 2010-04-08 Tokyo Electron Ltd 成膜装置及び基板処理装置
DE102008049353A1 (de) 2008-09-29 2010-04-08 Vat Holding Ag Vakuumventil
JP4638550B2 (ja) 2008-09-29 2011-02-23 東京エレクトロン株式会社 マスクパターンの形成方法、微細パターンの形成方法及び成膜装置
US9493875B2 (en) 2008-09-30 2016-11-15 Eugene Technology Co., Ltd. Shower head unit and chemical vapor deposition apparatus
US20100090149A1 (en) 2008-10-01 2010-04-15 Compressor Engineering Corp. Poppet valve assembly, system, and apparatus for use in high speed compressor applications
KR20100037212A (ko) 2008-10-01 2010-04-09 주식회사 동부하이텍 반도체 소자 및 그 제조 방법
US20100081293A1 (en) 2008-10-01 2010-04-01 Applied Materials, Inc. Methods for forming silicon nitride based film or silicon carbon based film
EP2332167A4 (en) 2008-10-03 2012-06-20 Veeco Process Equipment Inc GAS PHASE epitaxy
USD609655S1 (en) 2008-10-03 2010-02-09 Ngk Insulators, Ltd. Electrostatic chuck
JP2010114420A (ja) 2008-10-07 2010-05-20 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
EP2174942B1 (en) 2008-10-07 2011-11-30 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium and vanadium organometallic precursors for thin film deposition
US8293016B2 (en) 2008-10-07 2012-10-23 Applied Materials, Inc. Apparatus for efficient removal of halogen residues from etched substrates
WO2010041213A1 (en) 2008-10-08 2010-04-15 Abcd Technology Sarl Vapor phase deposition system
KR101491726B1 (ko) 2008-10-08 2015-02-17 주성엔지니어링(주) 반도체 소자의 갭필 방법
KR101627297B1 (ko) 2008-10-13 2016-06-03 한국에이에스엠지니텍 주식회사 플라즈마 처리부 및 이를 포함하는 증착 장치 및 증착 방법
US8133555B2 (en) 2008-10-14 2012-03-13 Asm Japan K.K. Method for forming metal film by ALD using beta-diketone metal complex
US8105465B2 (en) 2008-10-14 2012-01-31 Applied Materials, Inc. Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD)
KR20100041529A (ko) 2008-10-14 2010-04-22 삼성전자주식회사 초임계 유체를 이용한 물질막 증착장치, 이를 포함하는 물질막 증착 시스템 및 물질막 형성방법
WO2010044978A1 (en) 2008-10-15 2010-04-22 Arizona Board of Regents, a body corporate acting for and on behalf of Arizona State University Hybrid group iv/iii-v semiconductor structures
US7745346B2 (en) 2008-10-17 2010-06-29 Novellus Systems, Inc. Method for improving process control and film conformality of PECVD film
JP2010097834A (ja) 2008-10-17 2010-04-30 Ushio Inc バックライトユニット
US8697189B2 (en) 2008-10-21 2014-04-15 Intevac, Inc. Method and apparatus for precision surface modification in nano-imprint lithography
US8114734B2 (en) 2008-10-21 2012-02-14 United Microelectronics Corp. Metal capacitor and method of making the same
US7964858B2 (en) 2008-10-21 2011-06-21 Applied Materials, Inc. Ultraviolet reflector with coolant gas holes and method
US7967913B2 (en) 2008-10-22 2011-06-28 Applied Materials, Inc. Remote plasma clean process with cycled high and low pressure clean steps
JP2012506947A (ja) 2008-10-27 2012-03-22 アプライド マテリアルズ インコーポレイテッド 三元化合物の気相堆積方法
US8185443B2 (en) 2008-10-27 2012-05-22 Ebay, Inc. Method and apparatus for authorizing a payment via a remote device
EP2353176A4 (en) 2008-11-07 2013-08-28 Asm Inc REACTION CHAMBER
JP5410074B2 (ja) 2008-11-07 2014-02-05 東京エレクトロン株式会社 オゾンガス濃度測定方法、オゾンガス濃度測定システム及び基板処理装置
JP5062143B2 (ja) 2008-11-10 2012-10-31 東京エレクトロン株式会社 成膜装置
US20100121100A1 (en) 2008-11-12 2010-05-13 Daniel Travis Shay Supported palladium-gold catalysts and preparation of vinyl acetate therewith
US9017765B2 (en) 2008-11-12 2015-04-28 Applied Materials, Inc. Protective coatings resistant to reactive plasma processing
US8858745B2 (en) 2008-11-12 2014-10-14 Applied Materials, Inc. Corrosion-resistant bonding agents for bonding ceramic components which are exposed to plasmas
US8524616B2 (en) 2008-11-12 2013-09-03 Microchip Technology Incorporated Method of nonstoichiometric CVD dielectric film surface passivation for film roughness control
US20100116208A1 (en) 2008-11-13 2010-05-13 Applied Materials, Inc. Ampoule and delivery system for solid precursors
US10378106B2 (en) 2008-11-14 2019-08-13 Asm Ip Holding B.V. Method of forming insulation film by modified PEALD
US8647722B2 (en) 2008-11-14 2014-02-11 Asm Japan K.K. Method of forming insulation film using plasma treatment cycles
JP2010153769A (ja) 2008-11-19 2010-07-08 Tokyo Electron Ltd 基板位置検出装置、基板位置検出方法、成膜装置、成膜方法、プログラム及びコンピュータ可読記憶媒体
US20100130017A1 (en) 2008-11-21 2010-05-27 Axcelis Technologies, Inc. Front end of line plasma mediated ashing processes and apparatus
JP5225041B2 (ja) 2008-11-21 2013-07-03 京セラ株式会社 静電チャック
US8714169B2 (en) 2008-11-26 2014-05-06 Semes Co. Ltd. Spin head, apparatus for treating substrate, and method for treating substrate
KR101004434B1 (ko) 2008-11-26 2010-12-28 세메스 주식회사 기판 지지 유닛과, 이를 이용한 기판 연마 장치 및 방법
JP5185790B2 (ja) 2008-11-27 2013-04-17 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8138676B2 (en) 2008-12-01 2012-03-20 Mills Robert L Methods and systems for dimmable fluorescent lighting using multiple frequencies
WO2010065473A2 (en) 2008-12-01 2010-06-10 Applied Materials, Inc. Gas distribution blocker apparatus
US8252659B2 (en) 2008-12-02 2012-08-28 Imec Method for producing interconnect structures for integrated circuits
US8273634B2 (en) 2008-12-04 2012-09-25 Micron Technology, Inc. Methods of fabricating substrates
US8262287B2 (en) 2008-12-08 2012-09-11 Asm America, Inc. Thermocouple
US8765233B2 (en) 2008-12-09 2014-07-01 Asm Japan K.K. Method for forming low-carbon CVD film for filling trenches
JP5390846B2 (ja) 2008-12-09 2014-01-15 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマクリーニング方法
JP5356005B2 (ja) 2008-12-10 2013-12-04 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
US8033771B1 (en) 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
US7902009B2 (en) 2008-12-11 2011-03-08 Intel Corporation Graded high germanium compound films for strained semiconductor devices
US20100151206A1 (en) 2008-12-11 2010-06-17 Air Products And Chemicals, Inc. Method for Removal of Carbon From An Organosilicate Material
US20110264250A1 (en) 2008-12-15 2011-10-27 Tokyo Electron Limited Substrate processing system, substrate processing method and storage medium storing program
US20100147396A1 (en) 2008-12-15 2010-06-17 Asm Japan K.K. Multiple-Substrate Transfer Apparatus and Multiple-Substrate Processing Apparatus
US8557712B1 (en) 2008-12-15 2013-10-15 Novellus Systems, Inc. PECVD flowable dielectric gap fill
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
US7871587B2 (en) 2008-12-23 2011-01-18 Mks Instruments, Inc. Reactive chemical containment system
KR20100075070A (ko) 2008-12-24 2010-07-02 삼성전자주식회사 비휘발성 메모리 장치의 제조 방법
US8816424B2 (en) 2008-12-26 2014-08-26 SK Hynix Inc. Nonvolatile memory device
JP5268626B2 (ja) 2008-12-26 2013-08-21 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2010157536A (ja) 2008-12-26 2010-07-15 Nuflare Technology Inc サセプタの製造方法
CN101768731B (zh) 2008-12-29 2012-10-17 K.C.科技股份有限公司 原子层沉积装置
KR20100077442A (ko) 2008-12-29 2010-07-08 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
KR101111063B1 (ko) 2008-12-31 2012-02-16 엘아이지에이디피 주식회사 기판합착장치
US20100183825A1 (en) 2008-12-31 2010-07-22 Cambridge Nanotech Inc. Plasma atomic layer deposition system and method
US7964490B2 (en) 2008-12-31 2011-06-21 Intel Corporation Methods of forming nickel sulfide film on a semiconductor device
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
US8216380B2 (en) 2009-01-08 2012-07-10 Asm America, Inc. Gap maintenance for opening to process chamber
US20100176513A1 (en) 2009-01-09 2010-07-15 International Business Machines Corporation Structure and method of forming metal interconnect structures in ultra low-k dielectrics
JP5846917B2 (ja) 2009-01-11 2016-01-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板を移動させるシステム、装置、および方法
US8151814B2 (en) 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor
US8591659B1 (en) 2009-01-16 2013-11-26 Novellus Systems, Inc. Plasma clean method for deposition chamber
USD606952S1 (en) 2009-01-16 2009-12-29 Asm Genitech Korea Ltd. Plasma inducing plate for semiconductor deposition apparatus
US7919416B2 (en) 2009-01-21 2011-04-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US7972980B2 (en) 2009-01-21 2011-07-05 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US8142862B2 (en) 2009-01-21 2012-03-27 Asm Japan K.K. Method of forming conformal dielectric film having Si-N bonds by PECVD
US20100189923A1 (en) 2009-01-29 2010-07-29 Asm Japan K.K. Method of forming hardmask by plasma cvd
US8557702B2 (en) 2009-02-02 2013-10-15 Asm America, Inc. Plasma-enhanced atomic layers deposition of conductive material over dielectric layers
JP5330004B2 (ja) 2009-02-03 2013-10-30 株式会社東芝 半導体装置の製造方法
US8680650B2 (en) 2009-02-03 2014-03-25 Micron Technology, Inc. Capacitor structures having improved area efficiency
JP5705133B2 (ja) 2009-02-04 2015-04-22 マットソン テクノロジー インコーポレイテッドＭａｔｔｓｏｎ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． 静電チャックシステムおよび基板表面に亘って温度プロファイルを半径方向に調整するための方法
US8307472B1 (en) 2009-02-04 2012-11-13 Thomas Jason Saxon Light emitting diode system
US20100203242A1 (en) 2009-02-06 2010-08-12 Applied Materials, Inc. self-cleaning susceptor for solar cell processing
US8287648B2 (en) 2009-02-09 2012-10-16 Asm America, Inc. Method and apparatus for minimizing contamination in semiconductor processing chamber
US8716132B2 (en) 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US8663735B2 (en) 2009-02-13 2014-03-04 Advanced Technology Materials, Inc. In situ generation of RuO4 for ALD of Ru and Ru related materials
JPWO2010093041A1 (ja) 2009-02-16 2012-08-16 三菱樹脂株式会社 ガスバリア性積層フィルムの製造方法
GB2469112A (en) 2009-04-03 2010-10-06 Mapper Lithography Ip Bv Wafer support using controlled capillary liquid layer to hold and release wafer
WO2010095901A2 (en) 2009-02-23 2010-08-26 Synos Technology, Inc. Method for forming thin film using radicals generated by plasma
US8673081B2 (en) 2009-02-25 2014-03-18 Crystal Solar, Inc. High throughput multi-wafer epitaxial reactor
US8692466B2 (en) 2009-02-27 2014-04-08 Mks Instruments Inc. Method and apparatus of providing power to ignite and sustain a plasma in a reactive gas generator
JP5216632B2 (ja) 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
JP2010205967A (ja) 2009-03-04 2010-09-16 Tokyo Electron Ltd プラズマエッチング方法、プラズマエッチング装置及びコンピュータ記憶媒体
CN102341891A (zh) 2009-03-04 2012-02-01 富士电机株式会社 成膜方法与成膜装置
KR101049801B1 (ko) 2009-03-05 2011-07-15 삼성모바일디스플레이주식회사 다결정 실리콘층의 제조방법 및 이에 이용되는 원자층 증착장치
USD616394S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Support of wafer boat for manufacturing semiconductor wafers
USD616390S1 (en) 2009-03-06 2010-05-25 Tokyo Electron Limited Quartz cover for manufacturing semiconductor wafers
JP5221421B2 (ja) 2009-03-10 2013-06-26 東京エレクトロン株式会社 シャワーヘッド及びプラズマ処理装置
JP2010239115A (ja) 2009-03-10 2010-10-21 Hitachi Kokusai Electric Inc 基板処理装置
JP5337542B2 (ja) 2009-03-12 2013-11-06 株式会社堀場エステック マスフローメータ、マスフローコントローラ、それらを含むマスフローメータシステムおよびマスフローコントローラシステム
JP5275094B2 (ja) 2009-03-13 2013-08-28 東京エレクトロン株式会社 基板処理方法
US8703624B2 (en) 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
US9359666B2 (en) 2009-03-13 2016-06-07 The Board Of Trustees Of The University Of Illinois Rapid crystallization of heavily doped metal oxides and products produced thereby
EP2230703A3 (en) 2009-03-18 2012-05-02 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus and manufacturing method of lighting device
KR101055862B1 (ko) 2009-03-23 2011-08-09 주식회사 테라세미콘 인라인 열처리 장치
KR101583608B1 (ko) 2009-03-24 2016-01-08 삼성전자 주식회사 무기계 실리콘 전구체를 이용한 실리콘 산화막의 형성 방법및 이를 이용한 반도체 장치의 제조 방법
WO2010109848A1 (ja) 2009-03-26 2010-09-30 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
CN102365386A (zh) 2009-03-27 2012-02-29 东京毅力科创株式会社 金属氮化膜的成膜方法和存储介质
US9004744B1 (en) 2009-03-30 2015-04-14 Techni-Blend, Inc. Fluid mixer using countercurrent injection
JP5292160B2 (ja) 2009-03-31 2013-09-18 東京エレクトロン株式会社 ガス流路構造体及び基板処理装置
US8118484B2 (en) 2009-03-31 2012-02-21 Rosemount Inc. Thermocouple temperature sensor with connection detection circuitry
US8284601B2 (en) 2009-04-01 2012-10-09 Samsung Electronics Co., Ltd. Semiconductor memory device comprising three-dimensional memory cell array
JP5647792B2 (ja) 2009-04-01 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． キャパシタ用容量絶縁膜の製造方法
US8197915B2 (en) 2009-04-01 2012-06-12 Asm Japan K.K. Method of depositing silicon oxide film by plasma enhanced atomic layer deposition at low temperature
US9394608B2 (en) 2009-04-06 2016-07-19 Asm America, Inc. Semiconductor processing reactor and components thereof
US8402918B2 (en) 2009-04-07 2013-03-26 Lam Research Corporation Showerhead electrode with centering feature
US8486191B2 (en) 2009-04-07 2013-07-16 Asm America, Inc. Substrate reactor with adjustable injectors for mixing gases within reaction chamber
JP5338443B2 (ja) 2009-04-14 2013-11-13 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US9431237B2 (en) 2009-04-20 2016-08-30 Applied Materials, Inc. Post treatment methods for oxide layers on semiconductor devices
US8404499B2 (en) 2009-04-20 2013-03-26 Applied Materials, Inc. LED substrate processing
US8193075B2 (en) 2009-04-20 2012-06-05 Applied Materials, Inc. Remote hydrogen plasma with ion filter for terminating silicon dangling bonds
JP5710591B2 (ja) 2009-04-20 2015-04-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プロセスチャンバ壁上にシリコンコーティングを使用した残留フッ素ラジカルの除去の促進
JP5822823B2 (ja) 2009-04-21 2015-11-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 膜厚不均一性および粒子性能を改善するｃｖｄ装置
US20100266765A1 (en) 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
JP5204031B2 (ja) 2009-04-22 2013-06-05 Ｊｆｅ鋼板株式会社 嵌合式折板屋根材
US8071452B2 (en) 2009-04-27 2011-12-06 Asm America, Inc. Atomic layer deposition of hafnium lanthanum oxides
WO2010125810A1 (ja) 2009-04-28 2010-11-04 キヤノンアネルバ株式会社 半導体装置およびその製造方法
JP5136574B2 (ja) 2009-05-01 2013-02-06 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9297705B2 (en) 2009-05-06 2016-03-29 Asm America, Inc. Smart temperature measuring device
US8100583B2 (en) 2009-05-06 2012-01-24 Asm America, Inc. Thermocouple
US8382370B2 (en) 2009-05-06 2013-02-26 Asm America, Inc. Thermocouple assembly with guarded thermocouple junction
KR20100032812A (ko) 2009-05-11 2010-03-26 주식회사 테스 화학기상증착 장치와 이를 이용한 기판 처리 시스템
KR20100122701A (ko) 2009-05-13 2010-11-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
US7842622B1 (en) 2009-05-15 2010-11-30 Asm Japan K.K. Method of forming highly conformal amorphous carbon layer
WO2010132871A1 (en) 2009-05-15 2010-11-18 Wayne State University Thermally stable volatile film precursors
JP5356516B2 (ja) 2009-05-20 2013-12-04 株式会社東芝 凹凸パターン形成方法
US8004198B2 (en) 2009-05-28 2011-08-23 Osram Sylvania Inc. Resetting an electronic ballast in the event of fault
KR101064210B1 (ko) 2009-06-01 2011-09-14 한국생산기술연구원 막증착 진공장비용 샤워헤드
WO2010141898A1 (en) 2009-06-05 2010-12-09 Andrew Llc Unprepared cable end coaxial connector
US8758512B2 (en) 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
KR101610773B1 (ko) 2009-06-10 2016-04-08 주성엔지니어링(주) 박막 형성 방법 및 이의 제조 장치
US20100317198A1 (en) 2009-06-12 2010-12-16 Novellus Systems, Inc. Remote plasma processing of interface surfaces
JP5456036B2 (ja) 2009-06-12 2014-03-26 株式会社東芝 不揮発性半導体記憶装置
USD652896S1 (en) 2009-06-17 2012-01-24 Neoperl Gmbh Faucet stream former
US8926502B2 (en) 2011-03-07 2015-01-06 Endochoice, Inc. Multi camera endoscope having a side service channel
US8715574B2 (en) 2009-06-19 2014-05-06 Abbott Laboratories System for managing inventory of bulk liquids
US7825040B1 (en) 2009-06-22 2010-11-02 Asm Japan K.K. Method for depositing flowable material using alkoxysilane or aminosilane precursor
JP5285519B2 (ja) 2009-07-01 2013-09-11 パナソニック株式会社 半導体装置及びその製造方法
JP5038365B2 (ja) 2009-07-01 2012-10-03 株式会社東芝 サセプタおよび成膜装置
KR101050405B1 (ko) 2009-07-03 2011-07-19 주식회사 하이닉스반도체 스트레인드채널을 갖는 반도체장치 제조 방법
US20110006406A1 (en) 2009-07-08 2011-01-13 Imec Fabrication of porogen residues free and mechanically robust low-k materials
KR101110080B1 (ko) 2009-07-08 2012-03-13 주식회사 유진테크 확산판을 선택적으로 삽입설치하는 기판처리방법
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
KR20120042971A (ko) 2009-07-14 2012-05-03 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 고온에서의 ⅳ족 금속 함유 막의 퇴적
JP2011023718A (ja) 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
IN2012DN00642A (ko) 2009-07-17 2015-08-21 Mitsui Chemicals Inc
US8507389B2 (en) 2009-07-17 2013-08-13 Applied Materials, Inc. Methods for forming dielectric layers
JP5223804B2 (ja) 2009-07-22 2013-06-26 東京エレクトロン株式会社 成膜方法及び成膜装置
KR101245769B1 (ko) 2009-07-28 2013-03-20 엘아이지에이디피 주식회사 화학기상증착장치, 화학기상증착장치용 가이드부재 및 화학기상증착장치를 이용한 박막제조방법
US8980719B2 (en) 2010-04-28 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for doping fin field-effect transistors
US8071451B2 (en) 2009-07-29 2011-12-06 Axcelis Technologies, Inc. Method of doping semiconductors
JP5618505B2 (ja) 2009-07-30 2014-11-05 テクノクオーツ株式会社 石英ガラス部材の再生方法
US8124531B2 (en) 2009-08-04 2012-02-28 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
US8119527B1 (en) 2009-08-04 2012-02-21 Novellus Systems, Inc. Depositing tungsten into high aspect ratio features
KR20120050471A (ko) 2009-08-05 2012-05-18 어플라이드 머티어리얼스, 인코포레이티드 화학기상증착 장치
US8741788B2 (en) 2009-08-06 2014-06-03 Applied Materials, Inc. Formation of silicon oxide using non-carbon flowable CVD processes
EP3150614B1 (en) 2009-08-07 2017-11-29 Sigma-Aldrich Co. LLC High molecular weight alkyl-allyl cobalttricarbonyl complexes and use thereof for preparing dielectric thin films
US8258588B2 (en) 2009-08-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. Sealing layer of a field effect transistor
US8883270B2 (en) 2009-08-14 2014-11-11 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen—oxygen species
US8802201B2 (en) 2009-08-14 2014-08-12 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8877655B2 (en) 2010-05-07 2014-11-04 Asm America, Inc. Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8563085B2 (en) 2009-08-18 2013-10-22 Samsung Electronics Co., Ltd. Precursor composition, methods of forming a layer, methods of forming a gate structure and methods of forming a capacitor
US7989365B2 (en) 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101386552B1 (ko) 2009-08-20 2014-04-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법
WO2011021607A1 (ja) 2009-08-21 2011-02-24 東京エレクトロン株式会社 プラズマ処理装置および基板処理方法
KR101031226B1 (ko) 2009-08-21 2011-04-29 에이피시스템 주식회사 급속열처리 장치의 히터블록
US20110185969A1 (en) 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
US9117773B2 (en) 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
CN102414801A (zh) 2009-08-27 2012-04-11 应用材料公司 在原位腔室清洁后的处理腔室去污方法
US9117769B2 (en) 2009-08-27 2015-08-25 Tokyo Electron Limited Plasma etching method
USD634719S1 (en) 2009-08-27 2011-03-22 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
USD633452S1 (en) 2009-08-27 2011-03-01 Ebara Corporation Elastic membrane for semiconductor wafer polishing apparatus
US20110183079A1 (en) 2009-08-31 2011-07-28 Penn State Research Foundation Plasma enhanced atomic layer deposition process
JP2011054708A (ja) 2009-09-01 2011-03-17 Elpida Memory Inc 絶縁膜およびその製造方法、半導体装置、ならびにデータ処理システム
KR101805211B1 (ko) 2009-09-02 2017-12-05 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 게르마늄 함유 막 침착을 위한 디할라이드 게르마늄(ⅱ) 전구체
JP5457109B2 (ja) 2009-09-02 2014-04-02 東京エレクトロン株式会社 プラズマ処理装置
JP2011054878A (ja) 2009-09-04 2011-03-17 Panasonic Corp 半導体装置及びその製造方法
US9012333B2 (en) 2009-09-09 2015-04-21 Spansion Llc Varied silicon richness silicon nitride formation
MY179709A (en) 2009-09-10 2020-11-11 Lam Res Corp Replaceable upper chamber parts of plasma processing apparatus
US20110061810A1 (en) 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP2011082493A (ja) 2009-09-14 2011-04-21 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US8967082B2 (en) 2009-09-17 2015-03-03 Tokyo Electron Limited Plasma processing apparatus and gas supply device for plasma processing apparatus
SG169960A1 (en) 2009-09-18 2011-04-29 Lam Res Corp Clamped monolithic showerhead electrode
US8278224B1 (en) 2009-09-24 2012-10-02 Novellus Systems, Inc. Flowable oxide deposition using rapid delivery of process gases
US8216640B2 (en) 2009-09-25 2012-07-10 Hermes-Epitek Corporation Method of making showerhead for semiconductor processing apparatus
JP5504793B2 (ja) 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
US20120183689A1 (en) 2009-09-29 2012-07-19 Tokyo Electron Limited Ni film forming method
JP5467007B2 (ja) 2009-09-30 2014-04-09 株式会社日立国際電気 半導体装置の製造方法および基板処理装置
EP2306497B1 (en) 2009-10-02 2012-06-06 Imec Method for manufacturing a low defect interface between a dielectric and a III/V compound
WO2011043337A1 (ja) 2009-10-05 2011-04-14 国立大学法人東北大学 低誘電率絶縁膜およびその形成方法
US8544317B2 (en) 2009-10-09 2013-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor processing apparatus with simultaneously movable stages
US8173554B2 (en) 2009-10-14 2012-05-08 Asm Japan K.K. Method of depositing dielectric film having Si-N bonds by modified peald method
US8415259B2 (en) 2009-10-14 2013-04-09 Asm Japan K.K. Method of depositing dielectric film by modified PEALD method
JP5410235B2 (ja) 2009-10-15 2014-02-05 小島プレス工業株式会社 有機高分子薄膜の形成方法及び形成装置
US8465791B2 (en) 2009-10-16 2013-06-18 Msp Corporation Method for counting particles in a gas
KR101712040B1 (ko) 2009-10-20 2017-03-03 에이에스엠 인터내셔널 엔.브이. 유전체 막들의 부동태화를 위한 공정들
WO2011048968A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8637794B2 (en) 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
US20110097901A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
US9315896B2 (en) 2009-10-26 2016-04-19 Asm Ip Holding B.V. Synthesis and use of precursors for ALD of group VA element containing thin films
WO2011059708A2 (en) 2009-10-29 2011-05-19 Oceana Energy Company Energy conversion systems and methods
JP5434484B2 (ja) 2009-11-02 2014-03-05 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP5257328B2 (ja) 2009-11-04 2013-08-07 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5451324B2 (ja) 2009-11-10 2014-03-26 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8528224B2 (en) 2009-11-12 2013-09-10 Novellus Systems, Inc. Systems and methods for at least partially converting films to silicon oxide and/or improving film quality using ultraviolet curing in steam and densification of films using UV curing in ammonia
US8854734B2 (en) 2009-11-12 2014-10-07 Vela Technologies, Inc. Integrating optical system and methods
JP4948587B2 (ja) 2009-11-13 2012-06-06 東京エレクトロン株式会社 フォトレジスト塗布現像装置、基板搬送方法、インターフェイス装置
WO2011058069A2 (en) 2009-11-13 2011-05-19 Basf Se Method for purifying a chlorine supply
US8367528B2 (en) 2009-11-17 2013-02-05 Asm America, Inc. Cyclical epitaxial deposition and etch
US8329585B2 (en) 2009-11-17 2012-12-11 Lam Research Corporation Method for reducing line width roughness with plasma pre-etch treatment on photoresist
US8742665B2 (en) 2009-11-18 2014-06-03 Applied Materials, Inc. Plasma source design
US8771538B2 (en) 2009-11-18 2014-07-08 Applied Materials, Inc. Plasma source design
CN102074462B (zh) 2009-11-19 2014-02-26 罗门哈斯电子材料有限公司 形成电子器件的方法
KR20110055912A (ko) 2009-11-20 2011-05-26 주식회사 하이닉스반도체 반도체 소자의 콘택홀 형성방법
AU329418S (en) 2009-11-23 2010-01-29 Pusher tool
KR101128267B1 (ko) 2009-11-26 2012-03-26 주식회사 테스 가스분사장치 및 이를 갖는 공정 챔버
US8323558B2 (en) 2009-11-30 2012-12-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Dynamic control of lance utilizing counterflow fluidic techniques
JP5432686B2 (ja) 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
WO2011070741A1 (ja) 2009-12-11 2011-06-16 株式会社Sumco Ｃｖｄ用トレーおよびそれを用いた成膜方法
US20110139748A1 (en) 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8328494B2 (en) 2009-12-15 2012-12-11 Varian Semiconductor Equipment Associates, Inc. In vacuum optical wafer heater for cryogenic processing
WO2011084270A2 (en) 2009-12-16 2011-07-14 National Semiconductor Corporation Low ohmic contacts containing germanium for gallium nitride or other nitride-based power devices
US8507720B2 (en) 2010-01-29 2013-08-13 Lyondell Chemical Technology, L.P. Titania-alumina supported palladium catalyst
JP5419276B2 (ja) 2009-12-24 2014-02-19 株式会社堀場製作所 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム
JP5606063B2 (ja) 2009-12-28 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
US20110159202A1 (en) 2009-12-29 2011-06-30 Asm Japan K.K. Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
KR20110078326A (ko) 2009-12-31 2011-07-07 삼성전자주식회사 유전막 형성 방법 및 이를 이용한 반도체 소자 제조 방법
USD653734S1 (en) 2010-01-08 2012-02-07 Bulk Tank, Inc. Screened gasket
JP2011144412A (ja) 2010-01-13 2011-07-28 Honda Motor Co Ltd プラズマ成膜装置
JP2011166106A (ja) 2010-01-13 2011-08-25 Renesas Electronics Corp 半導体装置の製造方法及び半導体装置
JP5549441B2 (ja) 2010-01-14 2014-07-16 東京エレクトロン株式会社 保持体機構、ロードロック装置、処理装置及び搬送機構
US8252624B2 (en) 2010-01-18 2012-08-28 Applied Materials, Inc. Method of manufacturing thin film solar cells having a high conversion efficiency
USD651291S1 (en) 2010-01-24 2011-12-27 Glv International (1995) Ltd. Duct connector ring
US20110183269A1 (en) 2010-01-25 2011-07-28 Hongbin Zhu Methods Of Forming Patterns, And Methods For Trimming Photoresist Features
US8480942B2 (en) 2010-01-27 2013-07-09 The Board Of Trustees Of The University Of Illinois Method of forming a patterned layer of a material on a substrate
US20110180233A1 (en) 2010-01-27 2011-07-28 Applied Materials, Inc. Apparatus for controlling temperature uniformity of a showerhead
JP5610438B2 (ja) 2010-01-29 2014-10-22 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP5107372B2 (ja) 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
CN102741995A (zh) 2010-02-05 2012-10-17 东京毅力科创株式会社 基板保持用具、基板输送装置及基板处理装置
JP2011162830A (ja) 2010-02-09 2011-08-25 Fuji Electric Co Ltd プラズマｃｖｄによる成膜方法、成膜済基板および成膜装置
KR101080604B1 (ko) 2010-02-09 2011-11-04 성균관대학교산학협력단 원자층 식각 장치 및 이를 이용한 식각 방법
US20110198034A1 (en) 2010-02-11 2011-08-18 Jennifer Sun Gas distribution showerhead with coating material for semiconductor processing
TWI539517B (zh) 2010-02-12 2016-06-21 應用材料股份有限公司 使用於處理腔室之套件及使用用於氣流改良之套件之處理腔室
US8562272B2 (en) 2010-02-16 2013-10-22 Lam Research Corporation Substrate load and unload mechanisms for high throughput
US8293658B2 (en) 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
CN102770200B (zh) 2010-02-23 2014-12-10 旭有机材工业株式会社 直通式流体混合装置
US20110207332A1 (en) 2010-02-25 2011-08-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film coated process kits for semiconductor manufacturing tools
USD625977S1 (en) 2010-02-25 2010-10-26 Vertex Stone and Chinaware Ltd. Spacer tool
EP2362411A1 (en) 2010-02-26 2011-08-31 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Apparatus and method for reactive ion etching
JP5812606B2 (ja) 2010-02-26 2015-11-17 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
JP2011181681A (ja) 2010-03-01 2011-09-15 Mitsui Eng & Shipbuild Co Ltd 原子層堆積方法及び原子層堆積装置
US8241991B2 (en) 2010-03-05 2012-08-14 Asm Japan K.K. Method for forming interconnect structure having airgap
JP5889806B2 (ja) 2010-03-12 2016-03-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 複式噴射を伴う原子層堆積チャンバ
JP5592129B2 (ja) 2010-03-16 2014-09-17 東京エレクトロン株式会社 プラズマ処理装置
FR2957716B1 (fr) 2010-03-18 2012-10-05 Soitec Silicon On Insulator Procede de finition d'un substrat de type semi-conducteur sur isolant
US20110236201A1 (en) 2010-03-23 2011-09-29 Sumedhkumar Vyankatesh Shende Method and apparatus for radial exhaust gas turbine
US8039388B1 (en) 2010-03-24 2011-10-18 Taiwam Semiconductor Manufacturing Company, Ltd. Main spacer trim-back method for replacement gate process
US8741394B2 (en) 2010-03-25 2014-06-03 Novellus Systems, Inc. In-situ deposition of film stacks
US8709551B2 (en) 2010-03-25 2014-04-29 Novellus Systems, Inc. Smooth silicon-containing films
US20110232677A1 (en) 2010-03-29 2011-09-29 Tokyo Electron Limited Method for cleaning low-k dielectrics
JP5403151B2 (ja) 2010-03-31 2014-01-29 東京エレクトロン株式会社 プラズマ処理装置用誘電体窓、プラズマ処理装置、およびプラズマ処理装置用誘電体窓の取り付け方法
TWI498447B (zh) 2010-04-01 2015-09-01 Air Liquide 使用胺基金屬與鹵化金屬前驅物組合之含金屬氮化物之薄膜沈積
JP4733214B1 (ja) 2010-04-02 2011-07-27 東京エレクトロン株式会社 マスクパターンの形成方法及び半導体装置の製造方法
KR101211043B1 (ko) 2010-04-05 2012-12-12 에스케이하이닉스 주식회사 매립게이트를 구비한 반도체 장치 제조방법
US9018104B2 (en) 2010-04-09 2015-04-28 Hitachi Kokusai Electric Inc. Method for manufacturing semiconductor device, method for processing substrate and substrate processing apparatus
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
US8252691B2 (en) 2010-04-14 2012-08-28 Asm Genitech Korea Ltd. Method of forming semiconductor patterns
TWI506391B (zh) 2010-04-15 2015-11-01 Novellus Systems Inc 氣體及液體注射系統
US9257274B2 (en) 2010-04-15 2016-02-09 Lam Research Corporation Gapfill of variable aspect ratio features with a composite PEALD and PECVD method
US9390909B2 (en) 2013-11-07 2016-07-12 Novellus Systems, Inc. Soft landing nanolaminates for advanced patterning
US9076646B2 (en) 2010-04-15 2015-07-07 Lam Research Corporation Plasma enhanced atomic layer deposition with pulsed plasma exposure
US9373500B2 (en) 2014-02-21 2016-06-21 Lam Research Corporation Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications
US9611544B2 (en) 2010-04-15 2017-04-04 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US8637411B2 (en) 2010-04-15 2014-01-28 Novellus Systems, Inc. Plasma activated conformal dielectric film deposition
US9997357B2 (en) 2010-04-15 2018-06-12 Lam Research Corporation Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors
US8728956B2 (en) 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
US9892917B2 (en) 2010-04-15 2018-02-13 Lam Research Corporation Plasma assisted atomic layer deposition of multi-layer films for patterning applications
US8993460B2 (en) 2013-01-10 2015-03-31 Novellus Systems, Inc. Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US8956983B2 (en) 2010-04-15 2015-02-17 Novellus Systems, Inc. Conformal doping via plasma activated atomic layer deposition and conformal film deposition
CZ303655B6 (cs) 2010-04-16 2013-01-30 Skutchanová@Zuzana Zpusob výroby brousicího povrchu skleneného kosmetického prípravku
US8852685B2 (en) 2010-04-23 2014-10-07 Lam Research Corporation Coating method for gas delivery system
TWI536451B (zh) 2010-04-26 2016-06-01 應用材料股份有限公司 使用具金屬系前驅物之化學氣相沉積與原子層沉積製程之ｎ型金氧半導體金屬閘極材料、製造方法及設備
KR101121858B1 (ko) 2010-04-27 2012-03-21 주식회사 하이닉스반도체 반도체 소자의 제조 방법
KR20110120661A (ko) 2010-04-29 2011-11-04 주식회사 하이닉스반도체 비휘발성 메모리 장치 및 그의 제조 방법
CH702999A1 (de) 2010-04-29 2011-10-31 Amt Ag Vorrichtung zur Beschichtung von Substraten mittels Hochgeschwindigkeitsflammspritzen.
WO2011137371A2 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Vertical inline cvd system
US8496756B2 (en) 2010-04-30 2013-07-30 Applied Materials, Inc. Methods for processing substrates in process systems having shared resources
JP5660804B2 (ja) 2010-04-30 2015-01-28 東京エレクトロン株式会社 カーボンナノチューブの形成方法及びカーボンナノチューブ成膜装置
US8707754B2 (en) 2010-04-30 2014-04-29 Applied Materials, Inc. Methods and apparatus for calibrating flow controllers in substrate processing systems
US20110269314A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Process chambers having shared resources and methods of use thereof
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
US8241992B2 (en) 2010-05-10 2012-08-14 International Business Machines Corporation Method for air gap interconnect integration using photo-patternable low k material
US9441295B2 (en) 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
JP2012004536A (ja) 2010-05-20 2012-01-05 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法
US20110294075A1 (en) 2010-05-25 2011-12-01 United Microelectronics Corp. Patterning method
CN102917767B (zh) 2010-05-28 2015-11-25 埃克森美孚上游研究公司 整合吸附器头以及与其相关的阀设计和变化吸附法
US8513129B2 (en) 2010-05-28 2013-08-20 Applied Materials, Inc. Planarizing etch hardmask to increase pattern density and aspect ratio
CN102939648B (zh) 2010-06-01 2015-05-27 松下电器产业株式会社 等离子处理装置以及等离子处理方法
US8912353B2 (en) 2010-06-02 2014-12-16 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for depositing films comprising same
US20110297088A1 (en) 2010-06-04 2011-12-08 Texas Instruments Incorporated Thin edge carrier ring
US8637390B2 (en) 2010-06-04 2014-01-28 Applied Materials, Inc. Metal gate structures and methods for forming thereof
JP5794497B2 (ja) 2010-06-08 2015-10-14 国立研究開発法人産業技術総合研究所 連結システム
BR112012030336A2 (pt) 2010-06-09 2016-08-09 Procter & Gamble produção de composições líquidas para cuidados pessoais com fluxo de alimentação semicontínuo
JP5525339B2 (ja) 2010-06-10 2014-06-18 ナブテスコ株式会社 ロボットアーム
TWI529808B (zh) 2010-06-10 2016-04-11 Ａｓｍ國際股份有限公司 使膜選擇性沈積於基板上的方法
JP2012004401A (ja) 2010-06-18 2012-01-05 Fujitsu Semiconductor Ltd 半導体装置の製造方法
US8778745B2 (en) 2010-06-29 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5597456B2 (ja) 2010-06-29 2014-10-01 東京エレクトロン株式会社 誘電体の厚さ設定方法、及び電極に設けられた誘電体を備える基板処理装置
US9570328B2 (en) 2010-06-30 2017-02-14 Applied Materials, Inc. Substrate support for use with multi-zonal heating sources
JP5119297B2 (ja) 2010-06-30 2013-01-16 東京エレクトロン株式会社 基板処理装置
US20120024223A1 (en) 2010-07-02 2012-02-02 Matheson Tri-Gas, Inc. Thin films and methods of making them using cyclohexasilane
KR20120003677A (ko) 2010-07-05 2012-01-11 삼성전자주식회사 반도체 장치 및 그의 형성 방법
US9373677B2 (en) 2010-07-07 2016-06-21 Entegris, Inc. Doping of ZrO2 for DRAM applications
WO2012011423A1 (ja) 2010-07-22 2012-01-26 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
WO2012012381A1 (en) 2010-07-22 2012-01-26 Synos Technology, Inc. Treating surface of substrate using inert gas plasma in atomic layer deposition
US8721791B2 (en) 2010-07-28 2014-05-13 Applied Materials, Inc. Showerhead support structure for improved gas flow
JP5707766B2 (ja) 2010-07-28 2015-04-30 住友電気工業株式会社 サセプタおよび半導体製造装置
JP5490753B2 (ja) 2010-07-29 2014-05-14 東京エレクトロン株式会社 トレンチの埋め込み方法および成膜システム
US20120024478A1 (en) 2010-07-29 2012-02-02 Hermes-Epitek Corporation Showerhead
US8318584B2 (en) 2010-07-30 2012-11-27 Applied Materials, Inc. Oxide-rich liner layer for flowable CVD gapfill
US9443753B2 (en) 2010-07-30 2016-09-13 Applied Materials, Inc. Apparatus for controlling the flow of a gas in a process chamber
US8669185B2 (en) 2010-07-30 2014-03-11 Asm Japan K.K. Method of tailoring conformality of Si-containing film
JP2012038819A (ja) 2010-08-04 2012-02-23 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
US9449793B2 (en) 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
KR101331288B1 (ko) 2010-08-06 2013-11-20 도쿄엘렉트론가부시키가이샤 기판 처리 시스템, 반송 모듈, 기판 처리 방법 및 반도체 소자의 제조 방법
EP2602356A1 (en) 2010-08-06 2013-06-12 Mitsubishi Heavy Industries, Ltd. Vacuum processing apparatus and plasma processing method
US9449858B2 (en) 2010-08-09 2016-09-20 Applied Materials, Inc. Transparent reflector plate for rapid thermal processing chamber
US8357608B2 (en) 2010-08-09 2013-01-22 International Business Machines Corporation Multi component dielectric layer
EP2605817A4 (en) 2010-08-10 2014-09-17 Univ California SYSTEM AND METHOD FOR AUTOMATED LIQUID DISPENSING
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
KR101249999B1 (ko) 2010-08-12 2013-04-03 주식회사 디엠에스 화학기상증착 장치
KR101658492B1 (ko) 2010-08-13 2016-09-21 삼성전자주식회사 미세 패턴의 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
US8535445B2 (en) 2010-08-13 2013-09-17 Veeco Instruments Inc. Enhanced wafer carrier
US9487600B2 (en) 2010-08-17 2016-11-08 Uchicago Argonne, Llc Ordered nanoscale domains by infiltration of block copolymers
USD649986S1 (en) 2010-08-17 2011-12-06 Ebara Corporation Sealing ring
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
FI124113B (fi) 2010-08-30 2014-03-31 Beneq Oy Laitteisto ja menetelmä substraatin pinnan muokkaamiseksi
CN102386067B (zh) 2010-08-31 2013-12-18 中国科学院上海微系统与信息技术研究所 有效抑制自掺杂效应的外延生长方法
US8945305B2 (en) 2010-08-31 2015-02-03 Micron Technology, Inc. Methods of selectively forming a material using parylene coating
EP2426233B1 (en) 2010-09-03 2013-05-01 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of dialkyl monoalkoxy aluminum for the growth of Al2O3 thin films for photovoltaic applications
US8394466B2 (en) 2010-09-03 2013-03-12 Asm Japan K.K. Method of forming conformal film having si-N bonds on high-aspect ratio pattern
US8573152B2 (en) 2010-09-03 2013-11-05 Lam Research Corporation Showerhead electrode
CN102383106B (zh) 2010-09-03 2013-12-25 甘志银 快速清除残余反应气体的金属有机物化学气相沉积反应腔体
US20120058630A1 (en) 2010-09-08 2012-03-08 Veeco Instruments Inc. Linear Cluster Deposition System
JP2012080095A (ja) 2010-09-10 2012-04-19 Elpida Memory Inc 半導体装置及びその製造方法
JP5560147B2 (ja) 2010-09-13 2014-07-23 東京エレクトロン株式会社 成膜方法及び半導体装置の製造方法
TWI473163B (zh) 2010-09-15 2015-02-11 Tokyo Electron Ltd A plasma etching processing apparatus, a plasma etching processing method, and a semiconductor device manufacturing method
KR20120029291A (ko) 2010-09-16 2012-03-26 삼성전자주식회사 반도체 소자 및 그 제조 방법
WO2012039107A1 (ja) 2010-09-21 2012-03-29 株式会社アルバック 薄膜製造方法及び薄膜製造装置
US9685320B2 (en) 2010-09-23 2017-06-20 Lam Research Corporation Methods for depositing silicon oxide
US8524612B2 (en) 2010-09-23 2013-09-03 Novellus Systems, Inc. Plasma-activated deposition of conformal films
TWI513848B (zh) 2010-09-24 2015-12-21 Ferrotec Usa Corp 混合氣體注射器
US8722548B2 (en) 2010-09-24 2014-05-13 International Business Machines Corporation Structures and techniques for atomic layer deposition
US20120073400A1 (en) 2010-09-29 2012-03-29 John Wang Handlebar grip assembly
US20120083134A1 (en) 2010-09-30 2012-04-05 Hui-Jung Wu Method of mitigating substrate damage during deposition processes
US7994070B1 (en) 2010-09-30 2011-08-09 Tokyo Electron Limited Low-temperature dielectric film formation by chemical vapor deposition
US8076250B1 (en) 2010-10-06 2011-12-13 Applied Materials, Inc. PECVD oxide-nitride and oxide-silicon stacks for 3D memory application
TW201224190A (en) 2010-10-06 2012-06-16 Applied Materials Inc Atomic layer deposition of photoresist materials and hard mask precursors
JP5638405B2 (ja) 2010-10-08 2014-12-10 パナソニック株式会社 基板のプラズマ処理方法
FR2965888B1 (fr) 2010-10-08 2012-12-28 Alcatel Lucent Canalisation d'evacuation de gaz et procede d'evacuation associe
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
JP5734081B2 (ja) 2010-10-18 2015-06-10 株式会社日立国際電気 基板処理装置、基板処理装置の温度制御方法、及び基板処理装置の加熱方法
US8771791B2 (en) 2010-10-18 2014-07-08 Veeco Ald Inc. Deposition of layer using depositing apparatus with reciprocating susceptor
JP5636867B2 (ja) 2010-10-19 2014-12-10 富士通株式会社 半導体装置及び半導体装置の製造方法
WO2012054206A2 (en) 2010-10-19 2012-04-26 Applied Materials, Inc. Quartz showerhead for nanocure uv chamber
USD655260S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
KR101915138B1 (ko) 2010-10-21 2018-11-06 닛산 가가쿠 가부시키가이샤 Euv 리소그래피용 레지스트 상층막 형성 조성물
USD654884S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Top plate for reactor for manufacturing semiconductor
USD655261S1 (en) 2010-10-21 2012-03-06 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8192901B2 (en) 2010-10-21 2012-06-05 Asahi Glass Company, Limited Glass substrate-holding tool
USD654882S1 (en) 2010-10-21 2012-02-28 Tokyo Electron Limited Gas-separating plate for reactor for manufacturing semiconductor
US8845806B2 (en) 2010-10-22 2014-09-30 Asm Japan K.K. Shower plate having different aperture dimensions and/or distributions
US8926788B2 (en) 2010-10-27 2015-01-06 Lam Research Ag Closed chamber for wafer wet processing
CN103180932A (zh) 2010-10-27 2013-06-26 应用材料公司 用于控制光刻胶线宽粗糙度的方法及设备
JP4755307B1 (ja) 2010-10-28 2011-08-24 株式会社朝日工業社 クリーンルーム
JP5544343B2 (ja) 2010-10-29 2014-07-09 東京エレクトロン株式会社 成膜装置
KR20120047325A (ko) 2010-11-01 2012-05-11 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
KR20130135261A (ko) 2010-11-03 2013-12-10 어플라이드 머티어리얼스, 인코포레이티드 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들
KR101716113B1 (ko) 2010-11-03 2017-03-15 삼성전자 주식회사 반도체 소자 및 이의 제조 방법
US8470187B2 (en) 2010-11-05 2013-06-25 Asm Japan K.K. Method of depositing film with tailored comformality
KR20130086620A (ko) 2010-11-05 2013-08-02 시너스 테크놀리지, 인코포레이티드 다중 플라즈마 챔버를 구비한 라디칼 반응기
JP5722595B2 (ja) 2010-11-11 2015-05-20 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US20120121823A1 (en) 2010-11-12 2012-05-17 Applied Materials, Inc. Process for lowering adhesion layer thickness and improving damage resistance for thin ultra low-k dielectric film
JP2012109446A (ja) 2010-11-18 2012-06-07 Tokyo Electron Ltd 絶縁部材及び絶縁部材を備えた基板処理装置
JP2013544938A (ja) 2010-11-22 2013-12-19 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 半導体インク、膜、コーティングされた基板および製造方法
KR20120055363A (ko) 2010-11-23 2012-05-31 삼성전자주식회사 커패시터 및 이를 포함하는 반도체 소자
CN103189543A (zh) 2010-11-24 2013-07-03 思诺斯技术公司 用于在大衬底上执行原子层沉积的具有多个分段的延伸反应器组件
KR101573733B1 (ko) 2010-11-29 2015-12-04 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
US8288758B2 (en) 2010-12-02 2012-10-16 International Business Machines Corporation SOI SiGe-base lateral bipolar junction transistor
US8183500B2 (en) 2010-12-03 2012-05-22 Uvtech Systems, Inc. Orthogonal beam delivery system for wafer edge processing
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
KR101525813B1 (ko) 2010-12-09 2015-06-05 울박, 인크 유기 박막 형성 장치
TWI507561B (zh) 2010-12-10 2015-11-11 Ind Tech Res Inst 結合進氣和排氣的噴灑頭
KR101411808B1 (ko) 2010-12-10 2014-06-25 데이진 가부시키가이샤 반도체 적층체, 반도체 디바이스, 및 그들의 제조 방법
US9719169B2 (en) 2010-12-20 2017-08-01 Novellus Systems, Inc. System and apparatus for flowable deposition in semiconductor fabrication
KR20140003495A (ko) 2010-12-20 2014-01-09 어플라이드 머티어리얼스, 인코포레이티드 집적 손상 내성을 개선하기 위한 인-시튜 저-k 캡핑
EP3460833B1 (de) 2010-12-20 2023-12-06 EV Group E. Thallner GmbH Aufnahmeeinrichtung zur halterung von wafern
JP5735304B2 (ja) 2010-12-21 2015-06-17 株式会社日立国際電気 基板処理装置、基板の製造方法、半導体デバイスの製造方法およびガス供給管
CN102094183B (zh) 2010-12-22 2012-07-25 中国工程物理研究院激光聚变研究中心 冷壁间歇式反应器
US8314034B2 (en) 2010-12-23 2012-11-20 Intel Corporation Feature size reduction
JP5675331B2 (ja) 2010-12-27 2015-02-25 東京エレクトロン株式会社 トレンチの埋め込み方法
JP2012138500A (ja) 2010-12-27 2012-07-19 Tokyo Electron Ltd タングステン膜又は酸化タングステン膜上への酸化シリコン膜の成膜方法及び成膜装置
US8901016B2 (en) 2010-12-28 2014-12-02 Asm Japan K.K. Method of forming metal oxide hardmask
WO2012090973A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
JP5573666B2 (ja) 2010-12-28 2014-08-20 東京エレクトロン株式会社 原料供給装置及び成膜装置
FR2970110B1 (fr) 2010-12-29 2013-09-06 St Microelectronics Crolles 2 Procede de fabrication d'une couche de dielectrique polycristalline
USD655599S1 (en) 2010-12-29 2012-03-13 Bill Durham Wall or door mountable holder
CN103270578B (zh) 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
US8698107B2 (en) 2011-01-10 2014-04-15 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for monitoring ion mass, energy, and angle in processing systems
KR101306315B1 (ko) 2011-01-11 2013-09-09 주식회사 디엠에스 화학기상증착 장치
JP5236755B2 (ja) 2011-01-14 2013-07-17 東京エレクトロン株式会社 成膜装置及び成膜方法
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
JP5782279B2 (ja) 2011-01-20 2015-09-24 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US8398773B2 (en) 2011-01-21 2013-03-19 Asm International N.V. Thermal processing furnace and liner for the same
US8969823B2 (en) 2011-01-21 2015-03-03 Uchicago Argonne, Llc Microchannel plate detector and methods for their fabrication
US8450191B2 (en) 2011-01-24 2013-05-28 Applied Materials, Inc. Polysilicon films by HDP-CVD
US8900935B2 (en) 2011-01-25 2014-12-02 International Business Machines Corporation Deposition on a nanowire using atomic layer deposition
CN103329259B (zh) 2011-01-26 2015-05-27 应用材料公司 氮化硅与氮氧化硅的等离子体处理
US20120196242A1 (en) 2011-01-27 2012-08-02 Applied Materials, Inc. Substrate support with heater and rapid temperature change
US8465811B2 (en) 2011-01-28 2013-06-18 Asm Japan K.K. Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
JP2012164736A (ja) 2011-02-04 2012-08-30 Hitachi Kokusai Electric Inc 基板処理装置及び半導体装置の製造方法
US20120263876A1 (en) 2011-02-14 2012-10-18 Asm Ip Holding B.V. Deposition of silicon dioxide on hydrophobic surfaces
JP5982129B2 (ja) 2011-02-15 2016-08-31 東京エレクトロン株式会社 電極及びプラズマ処理装置
US8877300B2 (en) 2011-02-16 2014-11-04 Veeco Ald Inc. Atomic layer deposition using radicals of gas mixture
US9163310B2 (en) 2011-02-18 2015-10-20 Veeco Ald Inc. Enhanced deposition of layer on substrate using radicals
US8329599B2 (en) 2011-02-18 2012-12-11 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
US20120213947A1 (en) 2011-02-18 2012-08-23 Synos Technology, Inc. Depositing thin layer of material on permeable substrate
US8563443B2 (en) 2011-02-18 2013-10-22 Asm Japan K.K. Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen
TWM412450U (en) 2011-02-21 2011-09-21 Santoma Ltd Ceramic Glass composite electrode and Fluorescent
US10011920B2 (en) 2011-02-23 2018-07-03 International Business Machines Corporation Low-temperature selective epitaxial growth of silicon for device integration
US8574340B2 (en) 2011-02-27 2013-11-05 Board Of Trustees Of The University Of Alabama Methods for preparing and using metal and/or metal oxide porous materials
US20120219824A1 (en) 2011-02-28 2012-08-30 Uchicago Argonne Llc Atomic layer deposition of super-conducting niobium silicide
JP2012195562A (ja) 2011-02-28 2012-10-11 Hitachi Kokusai Electric Inc 異径基板用アタッチメントおよび基板処理装置ならびに基板若しくは半導体デバイスの製造方法
CN107164742B (zh) 2011-03-01 2020-10-16 应用材料公司 具有共享泵的真空腔室
US20120225191A1 (en) 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
US9017457B2 (en) 2011-03-01 2015-04-28 Exxonmobil Upstream Research Company Apparatus and systems having a reciprocating valve head assembly and swing adsorption processes related thereto
US8466411B2 (en) 2011-03-03 2013-06-18 Asm Japan K.K. Calibration method of UV sensor for UV curing
CN102655086B (zh) 2011-03-03 2015-07-01 东京毅力科创株式会社 半导体器件的制造方法
JP5933602B2 (ja) 2011-03-04 2016-06-15 ノベラス・システムズ・インコーポレーテッドＮｏｖｅｌｌｕｓ Ｓｙｓｔｅｍｓ Ｉｎｃｏｒｐｏｒａｔｅｄ ガス分配を行なう装置および基板処理装置
US8501605B2 (en) 2011-03-14 2013-08-06 Applied Materials, Inc. Methods and apparatus for conformal doping
ITMI20110401A1 (it) 2011-03-14 2012-09-15 Petroceramics S P A Metodo per l'infiltrazione di un materiale poroso con un secondo materiale e relativo impianto
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
JP2012195513A (ja) 2011-03-17 2012-10-11 Tokyo Electron Ltd プラズマ処理装置
JP5820731B2 (ja) 2011-03-22 2015-11-24 株式会社日立国際電気 基板処理装置および固体原料補充方法
US9684234B2 (en) 2011-03-24 2017-06-20 Uchicago Argonne, Llc Sequential infiltration synthesis for enhancing multiple-patterning lithography
US8980418B2 (en) 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
WO2012134605A1 (en) 2011-03-25 2012-10-04 Applied Materials, Inc. Method and apparatus for thermocouple installation or replacement in a substrate support
KR101303422B1 (ko) 2011-03-28 2013-09-05 주식회사 엘지실트론 단결정 잉곳의 제조방법 및 이에 의해 제조된 단결정 잉곳과 웨이퍼
JP5203482B2 (ja) 2011-03-28 2013-06-05 株式会社小松製作所 加熱装置
SG10201601916TA (en) 2011-03-28 2016-04-28 Applied Materials Inc Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
JP5922219B2 (ja) 2011-03-31 2016-05-24 アイメックＩｍｅｃ 単結晶スズ含有半導体材料を成長させる方法
KR101200720B1 (ko) 2011-03-31 2012-11-13 최대규 핫 배플판이 구비된 플라즈마 반응기 및 이를 이용한 기판 처리 방법
US8697198B2 (en) 2011-03-31 2014-04-15 Veeco Ald Inc. Magnetic field assisted deposition
US8569158B2 (en) 2011-03-31 2013-10-29 Tokyo Electron Limited Method for forming ultra-shallow doping regions by solid phase diffusion
KR102111702B1 (ko) 2011-04-07 2020-05-15 피코순 오와이 플라즈마 소오스를 갖는 원자층 퇴적
US8900402B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
US8647993B2 (en) 2011-04-11 2014-02-11 Novellus Systems, Inc. Methods for UV-assisted conformal film deposition
MX2013011852A (es) 2011-04-12 2014-01-31 Boulder Wind Power Inc Sistemas y metodos de control de espacio de aire.
US20120263887A1 (en) 2011-04-13 2012-10-18 Varian Semiconductor Equipment Associates, Inc. Technique and apparatus for ion-assisted atomic layer deposition
US8298951B1 (en) 2011-04-13 2012-10-30 Asm Japan K.K. Footing reduction using etch-selective layer
US8371567B2 (en) 2011-04-13 2013-02-12 Novellus Systems, Inc. Pedestal covers
JPWO2012141067A1 (ja) 2011-04-15 2014-07-28 タツモ株式会社 ウエハ交換装置およびウエハ支持用ハンド
DE102011007632B3 (de) 2011-04-18 2012-02-16 Siltronic Ag Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe
DE102011007682A1 (de) 2011-04-19 2012-10-25 Siltronic Ag Suszeptor zum Abstützen einer Halbleiterscheibe und Verfahren zum Abscheiden einer Schicht auf einer Vorderseite einer Halbleiterscheibe
TW201243030A (en) 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
US20120269967A1 (en) 2011-04-22 2012-10-25 Applied Materials, Inc. Hot Wire Atomic Layer Deposition Apparatus And Methods Of Use
US20120270384A1 (en) 2011-04-22 2012-10-25 Applied Materials, Inc. Apparatus for deposition of materials on a substrate
US8492170B2 (en) 2011-04-25 2013-07-23 Applied Materials, Inc. UV assisted silylation for recovery and pore sealing of damaged low K films
JP5955062B2 (ja) 2011-04-25 2016-07-20 東京エレクトロン株式会社 プラズマ処理装置
US8592005B2 (en) 2011-04-26 2013-11-26 Asm Japan K.K. Atomic layer deposition for controlling vertical film growth
USD655055S1 (en) 2011-04-28 2012-02-28 Carolyn Grace Toll Pet outfit
DE102011081749B4 (de) 2011-04-29 2016-04-14 Von Ardenne Gmbh Substratbehandlungsanlage
US8927066B2 (en) 2011-04-29 2015-01-06 Applied Materials, Inc. Method and apparatus for gas delivery
US9165804B2 (en) 2011-04-29 2015-10-20 Applied Materials, Inc. Methods of cooling process chamber components
JP5720406B2 (ja) 2011-05-10 2015-05-20 東京エレクトロン株式会社 ガス供給装置、熱処理装置、ガス供給方法及び熱処理方法
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
US9218962B2 (en) 2011-05-19 2015-12-22 Globalfoundries Inc. Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor
US8809170B2 (en) 2011-05-19 2014-08-19 Asm America Inc. High throughput cyclical epitaxial deposition and etch process
US8771807B2 (en) 2011-05-24 2014-07-08 Air Products And Chemicals, Inc. Organoaminosilane precursors and methods for making and using same
JP2012244180A (ja) 2011-05-24 2012-12-10 Macronix Internatl Co Ltd 多層接続構造及びその製造方法
JP5630379B2 (ja) 2011-05-26 2014-11-26 東京エレクトロン株式会社 温度測定装置、温度測定方法、記憶媒体及び熱処理装置
JP5730670B2 (ja) 2011-05-27 2015-06-10 株式会社Adeka 酸化モリブデンを含有する薄膜の製造方法、及び酸化モリブデンを含有する薄膜の形成用原料
KR101085980B1 (ko) 2011-05-31 2011-11-22 주식회사 쎄믹스 엘리먼트 셀레늄 증기 분위기에서의 셀레나이제이션 공정에 의한 태양 전지의 광흡수층 제조 방법 및 광흡수층 제조용 열처리 장치
US20120304935A1 (en) 2011-05-31 2012-12-06 Oosterlaken Theodorus G M Bubbler assembly and method for vapor flow control
JP2013012719A (ja) 2011-05-31 2013-01-17 Hitachi Kokusai Electric Inc 基板処理装置および基板処理方法
US9136180B2 (en) 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
KR101659463B1 (ko) 2011-06-03 2016-09-23 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 탄소-도핑된 규소-함유 막을 증착시키기 위한 조성물 및 방법
US8692319B2 (en) 2011-06-03 2014-04-08 Infineon Technologies Austria Ag Lateral trench MESFET
TWI541938B (zh) 2011-06-03 2016-07-11 諾菲勒斯系統公司 用於互連的含金屬及矽覆蓋層
US9312155B2 (en) 2011-06-06 2016-04-12 Asm Japan K.K. High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US8927318B2 (en) 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
KR20120137986A (ko) 2011-06-14 2012-12-24 삼성디스플레이 주식회사 정전척
TW201308021A (zh) 2011-06-15 2013-02-16 Applied Materials Inc 調控增強的電子自旋以控制光阻線寬粗糙度之方法與設備
JP5734757B2 (ja) 2011-06-16 2015-06-17 株式会社東芝 半導体装置及びその製造方法
US20120318457A1 (en) 2011-06-17 2012-12-20 Son Nguyen Materials and coatings for a showerhead in a processing system
US9175392B2 (en) 2011-06-17 2015-11-03 Intermolecular, Inc. System for multi-region processing
US9793148B2 (en) 2011-06-22 2017-10-17 Asm Japan K.K. Method for positioning wafers in multiple wafer transport
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
DE112012002699B4 (de) 2011-06-28 2018-12-13 Federal-Mogul Ignition Company Zündkerze und Verfahren zum Herstellen einer Elektrode einer Zündkerze
US8450212B2 (en) 2011-06-28 2013-05-28 International Business Machines Corporation Method of reducing critical dimension process bias differences between narrow and wide damascene wires
KR101553934B1 (ko) 2011-07-01 2015-09-17 타이요 유덴 케미컬 테크놀로지 가부시키가이샤 프라이머 조성물, 해당 조성물로 이루어지는 프라이머층을 포함하는 구조체, 및 해당 구조체의 제조 방법
JP5551831B2 (ja) 2011-07-05 2014-07-16 エピクルー株式会社 サセプタ装置及びこれを備えた成膜装置
WO2013006242A1 (en) 2011-07-06 2013-01-10 Wayne State University Atomic layer deposition of transition metal thin films
US10707082B2 (en) 2011-07-06 2020-07-07 Asm International N.V. Methods for depositing thin films comprising indium nitride by atomic layer deposition
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
US8647809B2 (en) 2011-07-07 2014-02-11 Brewer Science Inc. Metal-oxide films from small molecules for lithographic applications
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US20130011984A1 (en) 2011-07-07 2013-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Using Hexachlorodisilane as a Silicon Precursor for Source/Drain Epitaxy
US9223203B2 (en) 2011-07-08 2015-12-29 Asm International N.V. Microcontact printed films as an activation layer for selective atomic layer deposition
JP5755958B2 (ja) 2011-07-08 2015-07-29 株式会社フジキン 半導体製造装置の原料ガス供給装置
KR20130007806A (ko) 2011-07-11 2013-01-21 주식회사 케이씨텍 원자층 증착장치의 히터 모듈
CN103620751B (zh) 2011-07-12 2017-08-01 松下知识产权经营株式会社 氮化物半导体装置及其制造方法
US20130014697A1 (en) 2011-07-12 2013-01-17 Asm Japan K.K. Container Having Multiple Compartments Containing Liquid Material for Multiple Wafer-Processing Chambers
US9018567B2 (en) 2011-07-13 2015-04-28 Asm International N.V. Wafer processing apparatus with heated, rotating substrate support
JP5940342B2 (ja) 2011-07-15 2016-06-29 東京エレクトロン株式会社 基板搬送装置、基板処理システムおよび基板搬送方法、ならびに記憶媒体
US10854498B2 (en) 2011-07-15 2020-12-01 Asm Ip Holding B.V. Wafer-supporting device and method for producing same
US9630127B2 (en) 2011-07-19 2017-04-25 Hayward Industries, Inc. Filter vessel assembly and related methods of use
US8617411B2 (en) 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US8741775B2 (en) 2011-07-20 2014-06-03 Applied Materials, Inc. Method of patterning a low-K dielectric film
JP5789149B2 (ja) 2011-07-21 2015-10-07 Ｊｓｗアフティ株式会社 原子層成長方法及び原子層成長装置
US8778448B2 (en) 2011-07-21 2014-07-15 International Business Machines Corporation Method of stabilizing hydrogenated amorphous silicon and amorphous hydrogenated silicon alloys
KR102245759B1 (ko) 2011-07-22 2021-04-27 어플라이드 머티어리얼스, 인코포레이티드 Ald/cvd 프로세스들을 위한 반응물 전달 시스템
US8716072B2 (en) 2011-07-25 2014-05-06 International Business Machines Corporation Hybrid CMOS technology with nanowire devices and double gated planar devices
US10175195B2 (en) 2011-07-27 2019-01-08 The Board Of Trustees Of The University Of Illinois Nanopore sensors for biomolecular characterization
US20130025538A1 (en) 2011-07-27 2013-01-31 Applied Materials, Inc. Methods and apparatus for deposition processes
US8551892B2 (en) 2011-07-27 2013-10-08 Asm Japan K.K. Method for reducing dielectric constant of film using direct plasma of hydrogen
US20130025786A1 (en) 2011-07-28 2013-01-31 Vladislav Davidkovich Systems for and methods of controlling time-multiplexed deep reactive-ion etching processes
KR101271248B1 (ko) 2011-08-02 2013-06-07 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
KR101252742B1 (ko) 2011-08-02 2013-04-09 주식회사 유진테크 에피택셜 공정을 위한 반도체 제조설비
US20130032085A1 (en) 2011-08-04 2013-02-07 Applied Materials, Inc. Plasma assisted hvpe chamber design
US10242890B2 (en) 2011-08-08 2019-03-26 Applied Materials, Inc. Substrate support with heater
US9184100B2 (en) 2011-08-10 2015-11-10 United Microelectronics Corp. Semiconductor device having strained fin structure and method of making the same
CN102931083B (zh) 2011-08-10 2015-07-29 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
US20130040481A1 (en) 2011-08-12 2013-02-14 Genesis Technology Usa, Inc. U-Channel Coaxial F-Connector
TWI450999B (zh) 2011-08-19 2014-09-01 Tokyo Electron Ltd Ge-Sb-Te film forming method, Ge-Te film forming method, Sb-Te film forming method and memory medium
TWI492298B (zh) 2011-08-26 2015-07-11 Applied Materials Inc 雙重圖案化蝕刻製程
US8614047B2 (en) 2011-08-26 2013-12-24 International Business Machines Corporation Photodecomposable bases and photoresist compositions
US20130048606A1 (en) 2011-08-31 2013-02-28 Zhigang Mao Methods for in-situ chamber dry clean in photomask plasma etching processing chamber
KR101326518B1 (ko) 2011-09-02 2013-11-07 엘지이노텍 주식회사 조명 장치
JP5712874B2 (ja) 2011-09-05 2015-05-07 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP2013058559A (ja) 2011-09-07 2013-03-28 Tokyo Electron Ltd 半導体装置の製造方法及び基板処理システム
US20130217240A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-carbon-nitrogen layers for semiconductor processing
US10269615B2 (en) 2011-09-09 2019-04-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US20130217241A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Treatments for decreasing etch rates after flowable deposition of silicon-carbon-and-nitrogen-containing layers
US20130064973A1 (en) 2011-09-09 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chamber Conditioning Method
US8476743B2 (en) 2011-09-09 2013-07-02 International Business Machines Corporation C-rich carbon boron nitride dielectric films for use in electronic devices
US20130217239A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Flowable silicon-and-carbon-containing layers for semiconductor processing
US20130217243A1 (en) 2011-09-09 2013-08-22 Applied Materials, Inc. Doping of dielectric layers
JP2013062361A (ja) 2011-09-13 2013-04-04 Tokyo Electron Ltd 熱処理装置、温度制御システム、熱処理方法、温度制御方法及びその熱処理方法又はその温度制御方法を実行させるためのプログラムを記録した記録媒体
US10023954B2 (en) 2011-09-15 2018-07-17 Applied Materials, Inc. Slit valve apparatus, systems, and methods
US9177872B2 (en) 2011-09-16 2015-11-03 Micron Technology, Inc. Memory cells, semiconductor devices, systems including such cells, and methods of fabrication
JP1438319S (ko) 2011-09-20 2015-04-06
JP1438745S (ko) 2011-09-20 2015-04-06
US20130068970A1 (en) 2011-09-21 2013-03-21 Asm Japan K.K. UV Irradiation Apparatus Having UV Lamp-Shared Multiple Process Stations
KR101975071B1 (ko) 2011-09-23 2019-05-03 노벨러스 시스템즈, 인코포레이티드 플라즈마 활성화된 컨포멀 유전체 막 증착
US9312335B2 (en) 2011-09-23 2016-04-12 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor with narrow trench emitter
JP5549655B2 (ja) 2011-09-26 2014-07-16 株式会社安川電機 ハンドおよびロボット
JP6097754B2 (ja) 2011-09-27 2017-03-15 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ニッケル含有膜を堆積させる方法、及びニッケルケイ化物膜を堆積させるａｌｄ方法
US8993072B2 (en) 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
WO2013047531A1 (ja) 2011-09-27 2013-04-04 東京エレクトロン株式会社 プラズマエッチング方法及び半導体装置の製造方法
JP5784440B2 (ja) 2011-09-28 2015-09-24 トランスフォーム・ジャパン株式会社 半導体装置の製造方法及び半導体装置
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9644796B2 (en) 2011-09-29 2017-05-09 Applied Materials, Inc. Methods for in-situ calibration of a flow controller
USD709537S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
USD709536S1 (en) 2011-09-30 2014-07-22 Tokyo Electron Limited Focusing ring
JP6042656B2 (ja) 2011-09-30 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US8569184B2 (en) 2011-09-30 2013-10-29 Asm Japan K.K. Method for forming single-phase multi-element film by PEALD
WO2013050338A1 (en) 2011-10-03 2013-04-11 Asml Netherlands B.V. Method to provide a patterned orientation template for a self-assemblable polymer
US8551891B2 (en) 2011-10-04 2013-10-08 Applied Materials, Inc. Remote plasma burn-in
US8849466B2 (en) 2011-10-04 2014-09-30 Mks Instruments, Inc. Method of and apparatus for multiple channel flow ratio controller system
TWI719473B (zh) 2011-10-05 2021-02-21 美商應用材料股份有限公司 對稱電漿處理腔室
TWI458843B (zh) 2011-10-06 2014-11-01 Ind Tech Res Inst 蒸鍍裝置與有機薄膜的形成方法
US9653267B2 (en) 2011-10-06 2017-05-16 Applied Materials, Inc. Temperature controlled chamber liner
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013051248A1 (ja) 2011-10-07 2013-04-11 東京エレクトロン株式会社 プラズマ処理装置
CN103975418B (zh) 2011-10-10 2017-03-08 布鲁尔科技公司 用于平版印刷加工的旋涂碳组合物
US9281231B2 (en) 2011-10-12 2016-03-08 Ferrotec (Usa) Corporation Non-contact magnetic drive assembly with mechanical stop elements
JP6202798B2 (ja) 2011-10-12 2017-09-27 エーエスエム インターナショナル エヌ．ヴェー．Ａｓｍ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｎ．Ｖ． 酸化アンチモン膜の原子層堆積
US8637930B2 (en) 2011-10-13 2014-01-28 International Business Machines Company FinFET parasitic capacitance reduction using air gap
TWI541928B (zh) 2011-10-14 2016-07-11 晶元光電股份有限公司 晶圓載具
US8759234B2 (en) 2011-10-17 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Deposited material and method of formation
US20130092085A1 (en) 2011-10-17 2013-04-18 Synos Technology, Inc. Linear atomic layer deposition apparatus
US9109754B2 (en) 2011-10-19 2015-08-18 Applied Materials, Inc. Apparatus and method for providing uniform flow of gas
USD695240S1 (en) 2011-10-20 2013-12-10 Tokyo Electron Limited Arm for wafer transportation for manufacturing semiconductor
US20130099318A1 (en) 2011-10-25 2013-04-25 International Business Machines Corporation Thin semiconductor-on-insulator mosfet with co-integrated silicon, silicon germanium and silicon doped with carbon channels
US9096931B2 (en) 2011-10-27 2015-08-04 Asm America, Inc Deposition valve assembly and method of heating the same
US9341296B2 (en) 2011-10-27 2016-05-17 Asm America, Inc. Heater jacket for a fluid line
US11085112B2 (en) 2011-10-28 2021-08-10 Asm Ip Holding B.V. Susceptor with ring to limit backside deposition
US20130107415A1 (en) 2011-10-28 2013-05-02 Applied Materials, Inc. Electrostatic chuck
US9574268B1 (en) 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US8617985B2 (en) 2011-10-28 2013-12-31 Applied Materials, Inc. High temperature tungsten metallization process
US9017481B1 (en) 2011-10-28 2015-04-28 Asm America, Inc. Process feed management for semiconductor substrate processing
US20130113085A1 (en) 2011-11-04 2013-05-09 Applied Materials, Inc. Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium
TWI606136B (zh) 2011-11-04 2017-11-21 Ａｓｍ國際股份有限公司 沉積摻雜氧化矽的方法以及用於沉積摻雜氧化矽至基板上的原子層沉積製程
US8927428B2 (en) 2011-11-04 2015-01-06 E I Du Pont De Nemours And Company Process of forming an aluminum p-doped surface region of an n-doped semiconductor substrate
US8927059B2 (en) 2011-11-08 2015-01-06 Applied Materials, Inc. Deposition of metal films using alane-based precursors
CN102352492A (zh) 2011-11-10 2012-02-15 中微半导体设备(上海)有限公司 一种带冷却系统的气体注入装置
KR101420078B1 (ko) 2011-11-11 2014-07-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치용 유전체창 및 플라즈마 처리 장치
US20130122712A1 (en) 2011-11-14 2013-05-16 Jong Mun Kim Method of etching high aspect ratio features in a dielectric layer
US20130119018A1 (en) 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
WO2013075061A1 (en) 2011-11-17 2013-05-23 United Protective Technologies Carbon based coatings and methods of producing the same
KR102061919B1 (ko) 2011-11-21 2020-01-02 브레우어 사이언스 인코포레이션 Euv 리소그래피용 보조층
JP6038043B2 (ja) 2011-11-21 2016-12-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US8609519B2 (en) 2011-11-22 2013-12-17 Intermolecular, Inc. Combinatorial approach for screening of ALD film stacks
US9005539B2 (en) 2011-11-23 2015-04-14 Asm Ip Holding B.V. Chamber sealing member
US9167625B2 (en) 2011-11-23 2015-10-20 Asm Ip Holding B.V. Radiation shielding for a substrate holder
US10276410B2 (en) 2011-11-25 2019-04-30 Nhk Spring Co., Ltd. Substrate support device
JP5694129B2 (ja) 2011-11-29 2015-04-01 株式会社東芝 半導体装置及びその製造方法
JP5921168B2 (ja) 2011-11-29 2016-05-24 株式会社日立国際電気 基板処理装置
US8633115B2 (en) 2011-11-30 2014-01-21 Applied Materials, Inc. Methods for atomic layer etching
EP2786427A4 (en) 2011-12-01 2016-08-17 Quarkstar Llc SOLID BODY LIGHTING DEVICE AND METHOD OF MANUFACTURING THEREOF
US20130143415A1 (en) 2011-12-01 2013-06-06 Applied Materials, Inc. Multi-Component Film Deposition
JP6034156B2 (ja) 2011-12-05 2016-11-30 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
CN103534202B (zh) 2011-12-07 2017-02-15 松下知识产权经营株式会社 光催化剂、氢生成装置及能量系统
US8663977B2 (en) 2011-12-07 2014-03-04 Intermolecular, Inc. Vertically retractable flow cell system
AU340165S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
AU340167S (en) 2011-12-09 2012-01-06 Hunter Pacific Int Pty Ltd Electrical connector
US9112003B2 (en) 2011-12-09 2015-08-18 Asm International N.V. Selective formation of metallic films on metallic surfaces
JP6049395B2 (ja) 2011-12-09 2016-12-21 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
JP6046052B2 (ja) 2011-12-12 2016-12-14 東京エレクトロン株式会社 プラズマ発生用アンテナ、プラズマ処理装置及びプラズマ処理方法
US20130147050A1 (en) 2011-12-12 2013-06-13 Advanced Cooling Technologies, Inc. Semiconductor having integrally-formed enhanced thermal management
KR101347962B1 (ko) 2011-12-13 2014-01-08 주식회사 케이씨텍 박막의 특성 향상을 위한 원자층 증착방법
WO2013089711A1 (en) 2011-12-14 2013-06-20 Intel Corporation Metal-insulator-metal (mim) capacitor with insulator stack having a plurality of metal oxide layers
KR20130067600A (ko) 2011-12-14 2013-06-25 주식회사 케이씨텍 다이렉트 플라즈마 형성 원자층 증착장치
US8979559B2 (en) 2011-12-14 2015-03-17 Cooper Technologies Company Lockout tagout plug sleeve
CN104160061B (zh) 2011-12-16 2017-10-10 六号元素技术有限公司 大面积光学质量合成多晶金刚石窗户
US20130157409A1 (en) 2011-12-16 2013-06-20 Kaushik Vaidya Selective atomic layer deposition of passivation layers for silicon-based photovoltaic devices
WO2013095375A1 (en) 2011-12-20 2013-06-27 Intel Corporation Iii-v layers for n-type and p-type mos source-drain contacts
USD691974S1 (en) 2011-12-22 2013-10-22 Tokyo Electron Limited Holding pad for transferring a wafer
CN112563315A (zh) 2011-12-23 2021-03-26 索尼公司 半导体器件和集成电路结构
KR101427726B1 (ko) 2011-12-27 2014-08-07 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 반도체 장치의 제조 방법
US20130161629A1 (en) 2011-12-27 2013-06-27 Applied Materials, Inc. Zero shrinkage smooth interface oxy-nitride and oxy-amorphous-silicon stacks for 3d memory vertical gate application
JP5679581B2 (ja) 2011-12-27 2015-03-04 東京エレクトロン株式会社 成膜方法
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
KR20130076979A (ko) 2011-12-29 2013-07-09 삼성전자주식회사 반도체 소자 및 이의 제조방법
CN102505114A (zh) 2012-01-03 2012-06-20 西安电子科技大学 基于Ni膜辅助退火的SiC衬底上石墨烯制备方法
CN102539019B (zh) 2012-01-05 2013-09-25 北京东方计量测试研究所 空间真空环境下的温度测量与校准平台
TW201330086A (zh) 2012-01-05 2013-07-16 Duan-Ren Yu 蝕刻裝置
US8659066B2 (en) 2012-01-06 2014-02-25 International Business Machines Corporation Integrated circuit with a thin body field effect transistor and capacitor
KR20140110080A (ko) 2012-01-09 2014-09-16 어플라이드 머티어리얼스, 인코포레이티드 열화를 방지하기 위해 ｕｖ 챔버 광학 컴포넌트들을 시즈닝하기 위한 방법
USD676943S1 (en) 2012-01-11 2013-02-26 Bill Kluss Pipe end cap
US20130183814A1 (en) 2012-01-13 2013-07-18 Applied Materials, Inc. Method of depositing a silicon germanium tin layer on a substrate
US20140030447A1 (en) 2012-01-17 2014-01-30 Synos Technology, Inc. Deposition of Graphene or Conjugated Carbons Using Radical Reactor
US10838123B2 (en) 2012-01-19 2020-11-17 Supriya Jaiswal Materials, components, and methods for use with extreme ultraviolet radiation in lithography and other applications
US8592328B2 (en) 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film
USD665055S1 (en) 2012-01-24 2012-08-07 Asm Ip Holding B.V. Shower plate
JP2013151720A (ja) 2012-01-25 2013-08-08 Ulvac Japan Ltd 真空成膜装置
US20130189635A1 (en) 2012-01-25 2013-07-25 First Solar, Inc. Method and apparatus providing separate modules for processing a substrate
KR20130086806A (ko) 2012-01-26 2013-08-05 삼성전자주식회사 박막 증착 장치
JP5601331B2 (ja) 2012-01-26 2014-10-08 株式会社安川電機 ロボットハンドおよびロボット
WO2013112702A1 (en) 2012-01-26 2013-08-01 Applied Materials, Inc. Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
US9466524B2 (en) 2012-01-31 2016-10-11 Applied Materials, Inc. Method of depositing metals using high frequency plasma
US9177826B2 (en) 2012-02-02 2015-11-03 Globalfoundries Inc. Methods of forming metal nitride materials
US8784676B2 (en) 2012-02-03 2014-07-22 Lam Research Corporation Waferless auto conditioning
US8721833B2 (en) 2012-02-05 2014-05-13 Tokyo Electron Limited Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
USD698904S1 (en) 2012-02-08 2014-02-04 Asm Ip Holding B.V. Vacuum flange ring
US8728955B2 (en) 2012-02-14 2014-05-20 Novellus Systems, Inc. Method of plasma activated deposition of a conformal film on a substrate surface
KR101928356B1 (ko) 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
JP5912637B2 (ja) 2012-02-17 2016-04-27 東京エレクトロン株式会社 半導体装置の製造方法
US8686386B2 (en) 2012-02-17 2014-04-01 Sandisk 3D Llc Nonvolatile memory device using a varistor as a current limiter element
FI123320B (en) 2012-02-17 2013-02-28 Beneq Oy Nozzle and nozzle head
WO2013126175A1 (en) 2012-02-21 2013-08-29 Applied Materials, Inc. Atomic layer deposition lithography
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US9291063B2 (en) 2012-02-29 2016-03-22 Siemens Energy, Inc. Mid-section of a can-annular gas turbine engine with an improved rotation of air flow from the compressor to the turbine
CN103295867B (zh) 2012-02-29 2016-12-28 细美事有限公司 等离子体边界限制器单元和用于处理基板的设备
US9162209B2 (en) 2012-03-01 2015-10-20 Novellus Systems, Inc. Sequential cascading of reaction volumes as a chemical reuse strategy
US9202727B2 (en) 2012-03-02 2015-12-01 ASM IP Holding Susceptor heater shim
JP6159536B2 (ja) 2012-03-05 2017-07-05 株式会社日立国際電気 基板処理装置、基板処理装置の保守方法及び移載方法並びにプログラム
US8846536B2 (en) 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
KR102029286B1 (ko) 2012-03-09 2019-10-07 버슘머트리얼즈 유에스, 엘엘씨 디스플레이 디바이스를 위한 배리어 물질
EP2823083B1 (en) 2012-03-09 2023-10-04 Versum Materials US, LLC Methods for making silicon containing films on thin film transistor devices
KR20140143151A (ko) 2012-03-15 2014-12-15 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
US8912101B2 (en) 2012-03-15 2014-12-16 Asm Ip Holding B.V. Method for forming Si-containing film using two precursors by ALD
US8902428B2 (en) 2012-03-15 2014-12-02 Applied Materials, Inc. Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers
JP5547763B2 (ja) 2012-03-16 2014-07-16 三井造船株式会社 プラズマ生成方法、この方法を用いた薄膜形成方法及びプラズマ生成装置
USD715410S1 (en) 2012-03-21 2014-10-14 Blucher Metal A/S Roof drain
US9057388B2 (en) 2012-03-21 2015-06-16 International Business Machines Corporation Vacuum trap
KR20140144243A (ko) 2012-03-23 2014-12-18 피코순 오와이 원자층 증착 방법 및 장치
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9082684B2 (en) 2012-04-02 2015-07-14 Applied Materials, Inc. Method of epitaxial doped germanium tin alloy formation
US9982340B2 (en) 2012-04-04 2018-05-29 Taiwan Semiconductor Manufacturing Co. Ltd. Shower head apparatus and method for controlling plasma or gas distribution
US8946830B2 (en) 2012-04-04 2015-02-03 Asm Ip Holdings B.V. Metal oxide protective layer for a semiconductor device
GB201206096D0 (en) 2012-04-05 2012-05-16 Dyson Technology Ltd Atomic layer deposition
US9460912B2 (en) 2012-04-12 2016-10-04 Air Products And Chemicals, Inc. High temperature atomic layer deposition of silicon oxide thin films
US8853070B2 (en) 2012-04-13 2014-10-07 Oti Lumionics Inc. Functionalization of a substrate
US9484233B2 (en) 2012-04-13 2016-11-01 Novellus Systems, Inc. Carousel reactor for multi-station, sequential processing systems
US9698386B2 (en) 2012-04-13 2017-07-04 Oti Lumionics Inc. Functionalization of a substrate
US20130269612A1 (en) 2012-04-16 2013-10-17 Hermes-Epitek Corporation Gas Treatment Apparatus with Surrounding Spray Curtains
WO2013158527A1 (en) 2012-04-16 2013-10-24 Brewer Science Inc. Silicon hardmask layer for directed self-assembly
US8535767B1 (en) 2012-04-18 2013-09-17 Asm Ip Holding B.V. Method for repairing damage of dielectric film by hydrocarbon restoration and hydrocarbon depletion using UV irradiation
US9502276B2 (en) 2012-04-26 2016-11-22 Intevac, Inc. System architecture for vacuum processing
US10679883B2 (en) 2012-04-19 2020-06-09 Intevac, Inc. Wafer plate and mask arrangement for substrate fabrication
US9525099B2 (en) 2012-04-19 2016-12-20 Intevac, Inc. Dual-mask arrangement for solar cell fabrication
US20130280891A1 (en) 2012-04-20 2013-10-24 Yihwan Kim Method and apparatus for germanium tin alloy formation by thermal cvd
US8937800B2 (en) 2012-04-24 2015-01-20 Applied Materials, Inc. Electrostatic chuck with advanced RF and temperature uniformity
US8741723B2 (en) 2012-04-25 2014-06-03 Globalfoundries Inc. Methods of forming self-aligned contacts for a semiconductor device
TWI554636B (zh) 2012-04-25 2016-10-21 應用材料股份有限公司 由金屬脒鹽前驅物製造介電膜的方法
US8647439B2 (en) 2012-04-26 2014-02-11 Applied Materials, Inc. Method of epitaxial germanium tin alloy surface preparation
US10062600B2 (en) 2012-04-26 2018-08-28 Intevac, Inc. System and method for bi-facial processing of substrates
US20130288485A1 (en) 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9029253B2 (en) 2012-05-02 2015-05-12 Asm Ip Holding B.V. Phase-stabilized thin films, structures and devices including the thin films, and methods of forming same
US8728832B2 (en) 2012-05-07 2014-05-20 Asm Ip Holdings B.V. Semiconductor device dielectric interface layer
JP2013235912A (ja) 2012-05-08 2013-11-21 Tokyo Electron Ltd 被処理基体をエッチングする方法、及びプラズマエッチング装置
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US20130302520A1 (en) 2012-05-11 2013-11-14 Kai-An Wang Co-evaporation system comprising vapor pre-mixer
US8853826B2 (en) 2012-05-14 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus for bipolar junction transistors and resistors
TWI636571B (zh) 2012-05-18 2018-09-21 Novellus Systems, Inc. 透過電漿活化原子層沉積及保形膜沉積之保形摻雜
US20130312663A1 (en) 2012-05-22 2013-11-28 Applied Microstructures, Inc. Vapor Delivery Apparatus
US8846543B2 (en) 2012-05-24 2014-09-30 Jinhong Tong Methods of atomic layer deposition of hafnium oxide / erbium oxide bi-layer as advanced gate dielectrics
KR102102003B1 (ko) 2012-05-25 2020-04-20 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 플라즈마 처리 방법
TW201410688A (zh) 2012-05-25 2014-03-16 Air Liquide 用於蒸氣沈積之含鋯前驅物
US20130320429A1 (en) 2012-05-31 2013-12-05 Asm Ip Holding B.V. Processes and structures for dopant profile control in epitaxial trench fill
US8785215B2 (en) 2012-05-31 2014-07-22 Asm Ip Holding B.V. Method for repairing damage of dielectric film by cyclic processes
US9978585B2 (en) 2012-06-01 2018-05-22 Versum Materials Us, Llc Organoaminodisilane precursors and methods for depositing films comprising same
US8900886B2 (en) 2012-06-01 2014-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. System and method of monitoring and controlling atomic layer deposition of tungsten
US9337018B2 (en) 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
JP5920242B2 (ja) 2012-06-02 2016-05-18 東京エレクトロン株式会社 成膜方法及び成膜装置
TWI565825B (zh) 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
WO2013182878A2 (en) 2012-06-07 2013-12-12 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
US20130330911A1 (en) 2012-06-08 2013-12-12 Yi-Chiau Huang Method of semiconductor film stabilization
US8722546B2 (en) 2012-06-11 2014-05-13 Asm Ip Holding B.V. Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control
USD723330S1 (en) 2012-06-11 2015-03-03 Barry Dean York Debris mask and basin
US9984866B2 (en) 2012-06-12 2018-05-29 Component Re-Engineering Company, Inc. Multiple zone heater
US10325773B2 (en) 2012-06-12 2019-06-18 Novellus Systems, Inc. Conformal deposition of silicon carbide films
US8728938B2 (en) 2012-06-13 2014-05-20 Ostendo Technologies, Inc. Method for substrate pretreatment to achieve high-quality III-nitride epitaxy
US20130337653A1 (en) 2012-06-15 2013-12-19 Asm Ip Holding B.V. Semiconductor processing apparatus with compact free radical source
US20150167165A1 (en) 2012-06-15 2015-06-18 Picosun Oy Coating a substrate web by atomic layer deposition
US20130337172A1 (en) 2012-06-19 2013-12-19 Synos Technology, Inc. Reactor in deposition device with multi-staged purging structure
DE102012210332A1 (de) 2012-06-19 2013-12-19 Osram Opto Semiconductors Gmbh Ald-beschichtungsanlage
US8962078B2 (en) 2012-06-22 2015-02-24 Tokyo Electron Limited Method for depositing dielectric films
US10103329B2 (en) 2012-06-22 2018-10-16 Nec Corporation Switching element and method for manufacturing switching element
CN103515222A (zh) 2012-06-25 2014-01-15 中芯国际集成电路制造(上海)有限公司 顶层金属层沟槽的刻蚀方法
JP2014007289A (ja) 2012-06-25 2014-01-16 Tokyo Electron Ltd ガス供給装置及び成膜装置
US8933375B2 (en) 2012-06-27 2015-01-13 Asm Ip Holding B.V. Susceptor heater and method of heating a substrate
US10233541B2 (en) 2012-06-29 2019-03-19 Applied Materials, Inc. Deposition of films containing alkaline earth metals
US10535735B2 (en) 2012-06-29 2020-01-14 Intel Corporation Contact resistance reduced P-MOS transistors employing Ge-rich contact layer
USD705762S1 (en) 2012-07-04 2014-05-27 Sercomm Corporation Communication device having multi-module assembly
US9145612B2 (en) 2012-07-06 2015-09-29 Applied Materials, Inc. Deposition of N-metal films comprising aluminum alloys
US9023737B2 (en) 2012-07-11 2015-05-05 Asm Ip Holding B.V. Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
US9630284B2 (en) 2012-07-12 2017-04-25 Lincoln Global, Inc. Configurable welding table and force indicating clamp
US20150167162A1 (en) 2012-07-13 2015-06-18 Gallium Enterprises Pty Ltd Apparatus and method for film formation
US8784950B2 (en) 2012-07-16 2014-07-22 Asm Ip Holding B.V. Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US9928987B2 (en) 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
WO2014015248A1 (en) 2012-07-20 2014-01-23 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Organosilane precursors for ald/cvd silicon-containing film applications
US20140023794A1 (en) 2012-07-23 2014-01-23 Maitreyee Mahajani Method And Apparatus For Low Temperature ALD Deposition
JP5947138B2 (ja) 2012-07-25 2016-07-06 東京エレクトロン株式会社 成膜装置
US9911676B2 (en) 2012-07-27 2018-03-06 Asm Ip Holding B.V. System and method for gas-phase passivation of a semiconductor surface
US9558931B2 (en) 2012-07-27 2017-01-31 Asm Ip Holding B.V. System and method for gas-phase sulfur passivation of a semiconductor surface
US10103018B2 (en) 2012-07-31 2018-10-16 Semes Co., Ltd. Apparatus for treating substrate
US9117866B2 (en) 2012-07-31 2015-08-25 Asm Ip Holding B.V. Apparatus and method for calculating a wafer position in a processing chamber under process conditions
US20140034632A1 (en) 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
US8911826B2 (en) 2012-08-02 2014-12-16 Asm Ip Holding B.V. Method of parallel shift operation of multiple reactors
TWM446412U (zh) 2012-08-06 2013-02-01 Boogang Semiconductor Co Ltd 易清潔的排氣環
KR20200102524A (ko) 2012-08-07 2020-08-31 메사추세츠 인스티튜트 오브 테크놀로지 항-뎅기 바이러스 항체 및 이들의 용도
US8664627B1 (en) 2012-08-08 2014-03-04 Asm Ip Holding B.V. Method for supplying gas with flow rate gradient over substrate
US9514932B2 (en) 2012-08-08 2016-12-06 Applied Materials, Inc. Flowable carbon for semiconductor processing
US8912070B2 (en) 2012-08-16 2014-12-16 The Institute of Microelectronics Chinese Academy of Science Method for manufacturing semiconductor device
JP5906318B2 (ja) 2012-08-17 2016-04-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
US9707530B2 (en) 2012-08-21 2017-07-18 Uop Llc Methane conversion apparatus and process using a supersonic flow reactor
US9370757B2 (en) 2012-08-21 2016-06-21 Uop Llc Pyrolytic reactor
WO2014116304A2 (en) 2012-08-23 2014-07-31 Applied Materials, Inc. Method and hardware for cleaning uv chambers
USD693200S1 (en) 2012-08-28 2013-11-12 Lee Valley Tools, Ltd. Bench stop
US9659799B2 (en) 2012-08-28 2017-05-23 Asm Ip Holding B.V. Systems and methods for dynamic semiconductor process scheduling
US9169975B2 (en) 2012-08-28 2015-10-27 Asm Ip Holding B.V. Systems and methods for mass flow controller verification
JP2014049529A (ja) 2012-08-30 2014-03-17 Tokyo Electron Ltd プラズマ処理装置及び金属の酸化膜を洗浄する方法
US8859368B2 (en) 2012-09-04 2014-10-14 Globalfoundries Inc. Semiconductor device incorporating a multi-function layer into gate stacks
US8742668B2 (en) 2012-09-05 2014-06-03 Asm Ip Holdings B.V. Method for stabilizing plasma ignition
US9171715B2 (en) 2012-09-05 2015-10-27 Asm Ip Holding B.V. Atomic layer deposition of GeO2
US8651788B1 (en) 2012-09-06 2014-02-18 Horst Budde Variable-length, adjustable spacer
KR102296150B1 (ko) 2012-09-07 2021-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티-챔버 진공 시스템 확인 내에서의 다공성 유전체, 폴리머-코팅된 기판들 및 에폭시의 통합 프로세싱
KR20140033911A (ko) 2012-09-11 2014-03-19 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 증착 방법
US9021985B2 (en) 2012-09-12 2015-05-05 Asm Ip Holdings B.V. Process gas management for an inductively-coupled plasma deposition reactor
JP5882167B2 (ja) 2012-09-13 2016-03-09 東京エレクトロン株式会社 熱処理装置
US20140077240A1 (en) 2012-09-17 2014-03-20 Radek Roucka Iv material photonic device on dbr
JP6022274B2 (ja) 2012-09-18 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
WO2014046729A1 (en) 2012-09-19 2014-03-27 Apjet, Inc. Atmospheric-pressure plasma processing apparatus and method
US20140099794A1 (en) 2012-09-21 2014-04-10 Applied Materials, Inc. Radical chemistry modulation and control using multiple flow pathways
JP6136613B2 (ja) 2012-09-21 2017-05-31 東京エレクトロン株式会社 プラズマ処理方法
US8921207B2 (en) 2012-09-24 2014-12-30 Asm Ip Holding B.V., Inc. Tin precursors for vapor deposition and deposition processes
US9076674B2 (en) 2012-09-25 2015-07-07 Intermolecular, Inc. Method and apparatus for improving particle performance
US9324811B2 (en) 2012-09-26 2016-04-26 Asm Ip Holding B.V. Structures and devices including a tensile-stressed silicon arsenic layer and methods of forming same
JP6042160B2 (ja) 2012-10-03 2016-12-14 東京エレクトロン株式会社 成膜方法及び成膜装置
US20140099798A1 (en) 2012-10-05 2014-04-10 Asm Ip Holding B.V. UV-Curing Apparatus Provided With Wavelength-Tuned Excimer Lamp and Method of Processing Semiconductor Substrate Using Same
US9353441B2 (en) 2012-10-05 2016-05-31 Asm Ip Holding B.V. Heating/cooling pedestal for semiconductor-processing apparatus
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
JP2014086472A (ja) 2012-10-19 2014-05-12 Sinfonia Technology Co Ltd クランプ装置及びワーク搬送ロボット
US9064948B2 (en) 2012-10-22 2015-06-23 Globalfoundries Inc. Methods of forming a semiconductor device with low-k spacers and the resulting device
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
CN103794458B (zh) 2012-10-29 2016-12-21 中微半导体设备(上海)有限公司 用于等离子体处理腔室内部的部件及制造方法
WO2014070600A1 (en) 2012-10-29 2014-05-08 Matheson Tri-Gas, Inc. Methods for selective and conformal epitaxy of highly doped si-containing materials for three dimensional structures
JP5960028B2 (ja) 2012-10-31 2016-08-02 東京エレクトロン株式会社 熱処理装置
US20140116335A1 (en) 2012-10-31 2014-05-01 Asm Ip Holding B.V. UV Irradiation Apparatus with Cleaning Mechanism and Method for Cleaning UV Irradiation Apparatus
US8939781B2 (en) 2012-10-31 2015-01-27 International Business Machines Corporation Implementing reconfigurable power connector for multiple wiring configurations
US9330899B2 (en) 2012-11-01 2016-05-03 Asm Ip Holding B.V. Method of depositing thin film
US8821985B2 (en) 2012-11-02 2014-09-02 Intermolecular, Inc. Method and apparatus for high-K gate performance improvement and combinatorial processing
SG2013083654A (en) 2012-11-08 2014-06-27 Novellus Systems Inc Methods for depositing films on sensitive substrates
US9105587B2 (en) 2012-11-08 2015-08-11 Micron Technology, Inc. Methods of forming semiconductor structures with sulfur dioxide etch chemistries
US20140141674A1 (en) 2012-11-16 2014-05-22 Liquipel IP, LLC Apparatus and methods for plasma enhanced chemical vapor deposition of dielectric/polymer coatings
US20150291830A1 (en) 2012-11-16 2015-10-15 Liquipel Ip Llc Apparatus and methods for plasma enhanced chemical vapor deposition of polymer coatings
US8784951B2 (en) 2012-11-16 2014-07-22 Asm Ip Holding B.V. Method for forming insulation film using non-halide precursor having four or more silicons
USD693782S1 (en) 2012-11-19 2013-11-19 Epicrew Corporation Lid for epitaxial growing device
KR102116469B1 (ko) 2012-11-20 2020-05-29 삼성디스플레이 주식회사 터치 패널 표시 장치
US9190486B2 (en) 2012-11-20 2015-11-17 Globalfoundries Inc. Integrated circuits and methods for fabricating integrated circuits with reduced parasitic capacitance
US20140145332A1 (en) 2012-11-26 2014-05-29 Globalfoundries Inc. Methods of forming graphene liners and/or cap layers on copper-based conductive structures
US8973524B2 (en) 2012-11-27 2015-03-10 Intermolecular, Inc. Combinatorial spin deposition
CN104822866B (zh) 2012-11-27 2017-09-01 索泰克公司 具有可互换气体喷射器的沉积系统和相关的方法
US9146551B2 (en) 2012-11-29 2015-09-29 Asm Ip Holding B.V. Scheduler for processing system
CN102983093B (zh) 2012-12-03 2016-04-20 安徽三安光电有限公司 一种用于led外延晶圆制程的石墨承载盘
KR102046976B1 (ko) 2012-12-04 2019-12-02 삼성전자주식회사 반도체 메모리 장치 및 그 제조 방법
US9362092B2 (en) 2012-12-07 2016-06-07 LGS Innovations LLC Gas dispersion disc assembly
US9123577B2 (en) 2012-12-12 2015-09-01 Sandisk Technologies Inc. Air gap isolation in non-volatile memory using sacrificial films
JP6071514B2 (ja) 2012-12-12 2017-02-01 東京エレクトロン株式会社 静電チャックの改質方法及びプラズマ処理装置
US9023438B2 (en) 2012-12-17 2015-05-05 Intermolecular, Inc. Methods and apparatus for combinatorial PECVD or PEALD
US10240230B2 (en) 2012-12-18 2019-03-26 Seastar Chemicals Inc. Process and method for in-situ dry cleaning of thin film deposition reactors and thin film layers
JP6017396B2 (ja) 2012-12-18 2016-11-02 東京エレクトロン株式会社 薄膜形成方法および薄膜形成装置
US9064857B2 (en) 2012-12-19 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. N metal for FinFET
KR101950349B1 (ko) 2012-12-26 2019-02-20 에스케이하이닉스 주식회사 보이드 프리 폴리실리콘 갭필 방법 및 그를 이용한 반도체장치 제조 방법
US9640416B2 (en) 2012-12-26 2017-05-02 Asm Ip Holding B.V. Single-and dual-chamber module-attachable wafer-handling chamber
JP6134740B2 (ja) 2012-12-27 2017-05-24 住友化学株式会社 オキシムの製造方法
GB201223473D0 (en) 2012-12-28 2013-02-13 Faradion Ltd Metal-containing compounds
US20140182053A1 (en) 2012-12-29 2014-07-03 Alexander Yeh Industry Co., Ltd. Pullable drain plug
EP2750167A1 (en) 2012-12-31 2014-07-02 Imec Method for tuning the effective work function of a gate structure in a semiconductor device
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
US9583364B2 (en) 2012-12-31 2017-02-28 Sunedison Semiconductor Limited (Uen201334164H) Processes and apparatus for preparing heterostructures with reduced strain by radial compression
US20140187045A1 (en) 2013-01-02 2014-07-03 Applied Materials, Inc. Silicon nitride gapfill implementing high density plasma
KR20140089793A (ko) 2013-01-07 2014-07-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN103014846A (zh) 2013-01-14 2013-04-03 东莞市中镓半导体科技有限公司 一种材料气相外延用同心圆环喷头结构
EP2946028B1 (en) 2013-01-16 2018-12-26 Universiteit Gent Methods for obtaining hydrophilic fluoropolymers
US8853039B2 (en) 2013-01-17 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction for formation of epitaxial layer in source and drain regions
KR102097109B1 (ko) 2013-01-21 2020-04-10 에이에스엠 아이피 홀딩 비.브이. 증착 장치
CN103972132B (zh) 2013-01-24 2017-07-11 东京毅力科创株式会社 基板处理装置和载置台
KR20140095738A (ko) 2013-01-25 2014-08-04 삼성전자주식회사 트랜지스터 및 그 제조 방법
US9018093B2 (en) 2013-01-25 2015-04-28 Asm Ip Holding B.V. Method for forming layer constituted by repeated stacked layers
US9314854B2 (en) 2013-01-30 2016-04-19 Lam Research Corporation Ductile mode drilling methods for brittle components of plasma processing apparatuses
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US8894870B2 (en) 2013-02-01 2014-11-25 Asm Ip Holding B.V. Multi-step method and apparatus for etching compounds containing a metal
JP5335155B1 (ja) 2013-02-04 2013-11-06 善郎 水野 温度計の管理システム
US9399228B2 (en) 2013-02-06 2016-07-26 Novellus Systems, Inc. Method and apparatus for purging and plasma suppression in a process chamber
EP2765218A1 (en) 2013-02-07 2014-08-13 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Method and apparatus for depositing atomic layers on a substrate
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9184045B2 (en) 2013-02-08 2015-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bottom-up PEALD process
US9758866B2 (en) 2013-02-13 2017-09-12 Wayne State University Synthesis and characterization of first row transition metal complexes containing α-imino alkoxides as precursors for deposition of metal films
KR20140102782A (ko) 2013-02-14 2014-08-25 삼성전자주식회사 웨이퍼 이송용 블레이드 및 이를 포함하는 웨이퍼 이송 장치
TWI624560B (zh) 2013-02-18 2018-05-21 應用材料股份有限公司 用於原子層沉積的氣體分配板及原子層沉積系統
US8932923B2 (en) 2013-02-19 2015-01-13 Globalfoundries Inc. Semiconductor gate structure for threshold voltage modulation and method of making same
TW201437423A (zh) 2013-02-21 2014-10-01 Applied Materials Inc 用於注射器至基板的空隙控制之裝置及方法
US20140234466A1 (en) 2013-02-21 2014-08-21 HGST Netherlands B.V. Imprint mold and method for making using sidewall spacer line doubling
US8623770B1 (en) 2013-02-21 2014-01-07 HGST Netherlands B.V. Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide
FR3002241B1 (fr) 2013-02-21 2015-11-20 Altatech Semiconductor Dispositif de depot chimique en phase vapeur
JP5934665B2 (ja) 2013-02-22 2016-06-15 東京エレクトロン株式会社 成膜方法、プログラム、コンピュータ記憶媒体及び成膜システム
US9304396B2 (en) 2013-02-25 2016-04-05 Lam Research Corporation PECVD films for EUV lithography
JP5717888B2 (ja) 2013-02-25 2015-05-13 東京エレクトロン株式会社 プラズマ処理装置
TWI615497B (zh) 2013-02-28 2018-02-21 應用材料股份有限公司 金屬胺化物沉積前驅物及具有惰性安瓿襯裡之該前驅物的穩定化
US9449795B2 (en) 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
USD743357S1 (en) 2013-03-01 2015-11-17 Asm Ip Holding B.V. Susceptor
US8790743B1 (en) 2013-03-04 2014-07-29 Asm Ip Holding B.V. Method for controlling cyclic plasma-assisted process
US9593410B2 (en) 2013-03-05 2017-03-14 Applied Materials, Inc. Methods and apparatus for stable substrate processing with multiple RF power supplies
TWD164568S (zh) 2013-03-05 2014-12-01 東京威力科創股份有限公司 探針卡盒
USD751555S1 (en) 2013-03-05 2016-03-15 Japan Electronic Materials Corp. Probe card case
US9633889B2 (en) 2013-03-06 2017-04-25 Applied Materials, Inc. Substrate support with integrated vacuum and edge purge conduits
US9484191B2 (en) 2013-03-08 2016-11-01 Asm Ip Holding B.V. Pulsed remote plasma method and system
USD723153S1 (en) 2013-03-08 2015-02-24 Olen Borkholder Recess ceiling fan bezel
US20150218700A1 (en) 2013-03-08 2015-08-06 Applied Materials, Inc. Chamber component with protective coating suitable for protection against flourine plasma
JP2016520707A (ja) 2013-03-08 2016-07-14 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ フッ素プラズマに対する保護に適した保護コーティングを有するチャンバ構成要素
US9589770B2 (en) 2013-03-08 2017-03-07 Asm Ip Holding B.V. Method and systems for in-situ formation of intermediate reactive species
USD702188S1 (en) 2013-03-08 2014-04-08 Asm Ip Holding B.V. Thermocouple
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US8933528B2 (en) 2013-03-11 2015-01-13 International Business Machines Corporation Semiconductor fin isolation by a well trapping fin portion
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9312222B2 (en) 2013-03-12 2016-04-12 Taiwan Semiconductor Manufacturing Co., Ltd. Patterning approach for improved via landing profile
US20140264444A1 (en) 2013-03-13 2014-09-18 International Business Machines Corporation Stress-enhancing selective epitaxial deposition of embedded source and drain regions
KR101317942B1 (ko) 2013-03-13 2013-10-16 (주)테키스트 반도체 제조용 척의 에지링 냉각모듈
US20140262028A1 (en) 2013-03-13 2014-09-18 Intermolecular, Inc. Non-Contact Wet-Process Cell Confining Liquid to a Region of a Solid Surface by Differential Pressure
US9564309B2 (en) 2013-03-14 2017-02-07 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
WO2014158253A2 (en) 2013-03-14 2014-10-02 Applied Materials, Inc. Thermal treated sandwich structure layer to improve adhesive strength
US20140273531A1 (en) 2013-03-14 2014-09-18 Asm Ip Holding B.V. Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
US9991153B2 (en) 2013-03-14 2018-06-05 Applied Materials, Inc. Substrate support bushing
WO2014159427A1 (en) 2013-03-14 2014-10-02 Applied Materials, Inc Resist hardening and development processes for semiconductor device manufacturing
US9309978B2 (en) 2013-03-14 2016-04-12 Dresser-Rand Company Low head to stem ratio poppet valve
KR101701257B1 (ko) 2013-03-14 2017-02-01 어플라이드 머티어리얼스, 인코포레이티드 박막 캡슐화 ― ｏｌｅｄ 어플리케이션을 위한 얇은 초고 배리어 층
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US9556507B2 (en) 2013-03-14 2017-01-31 Applied Materials, Inc. Yttria-based material coated chemical vapor deposition chamber heater
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9824881B2 (en) 2013-03-14 2017-11-21 Asm Ip Holding B.V. Si precursors for deposition of SiN at low temperatures
US20140273534A1 (en) 2013-03-14 2014-09-18 Tokyo Electron Limited Integration of absorption based heating bake methods into a photolithography track system
WO2014140672A1 (en) 2013-03-15 2014-09-18 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Bis(alkylimido)-bis(alkylamido)molybdenum molecules for deposition of molybdenum-containing films
US9721784B2 (en) 2013-03-15 2017-08-01 Applied Materials, Inc. Ultra-conformal carbon film deposition
TWI627305B (zh) 2013-03-15 2018-06-21 應用材料股份有限公司 用於轉盤處理室之具有剛性板的大氣蓋
WO2014150260A1 (en) 2013-03-15 2014-09-25 Applied Materials, Inc Process load lock apparatus, lift assemblies, electronic device processing systems, and methods of processing substrates in load lock locations
US9865431B2 (en) 2013-03-15 2018-01-09 Applied Materials, Inc. Apparatus and method for tuning a plasma profile using a tuning electrode in a processing chamber
US9564348B2 (en) 2013-03-15 2017-02-07 Applied Materials, Inc. Shutter blade and robot blade with CTE compensation
US20140273530A1 (en) 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
CN109441627A (zh) 2013-03-15 2019-03-08 普莱姆集团联盟有限责任公司 具有非粘性层密封的对置活塞内燃发动机
US8984962B2 (en) 2013-03-15 2015-03-24 H. Aaron Christmann Rotatable torque-measuring apparatus and method
US9666702B2 (en) 2013-03-15 2017-05-30 Matthew H. Kim Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices
JP5864637B2 (ja) 2013-03-19 2016-02-17 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
JP6096547B2 (ja) 2013-03-21 2017-03-15 東京エレクトロン株式会社 プラズマ処理装置及びシャワープレート
JP5386046B1 (ja) 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
USD734377S1 (en) 2013-03-28 2015-07-14 Hirata Corporation Top cover of a load lock chamber
JP6115244B2 (ja) 2013-03-28 2017-04-19 東京エレクトロン株式会社 成膜装置
JP6107327B2 (ja) 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
JP6134191B2 (ja) 2013-04-07 2017-05-24 村川 惠美 回転型セミバッチａｌｄ装置
KR101390474B1 (ko) 2013-04-08 2014-05-07 주식회사 유진테크 기판처리장치
US9142437B2 (en) 2013-04-10 2015-09-22 Globalfoundries Inc. System for separately handling different size FOUPs
US8864202B1 (en) 2013-04-12 2014-10-21 Varian Semiconductor Equipment Associates, Inc. Spring retained end effector contact pad
FR3004712B1 (fr) 2013-04-19 2015-05-08 Herakles Procede de fabrication de materiau composite a matrice carbure
JP2014216647A (ja) 2013-04-29 2014-11-17 エーエスエムアイピー ホールディング ビー．ブイ． 金属ドープされた抵抗切り替え層を有する抵抗変化型メモリを製造する方法
US8956939B2 (en) 2013-04-29 2015-02-17 Asm Ip Holding B.V. Method of making a resistive random access memory device
CN106169415B (zh) 2013-05-03 2020-02-14 应用材料公司 用于多图案化应用的光调谐硬掩模
JP6068255B2 (ja) 2013-05-13 2017-01-25 大陽日酸株式会社 気相成長装置および気相成長装置の部材搬送方法
USD766849S1 (en) 2013-05-15 2016-09-20 Ebara Corporation Substrate retaining ring
US9252024B2 (en) 2013-05-17 2016-02-02 Applied Materials, Inc. Deposition chambers with UV treatment and methods of use
JP2014229680A (ja) 2013-05-21 2014-12-08 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
US9299837B2 (en) 2013-05-22 2016-03-29 Globalfoundries Inc. Integrated circuit having MOSFET with embedded stressor and method to fabricate same
US9365924B2 (en) 2013-05-23 2016-06-14 Asm Ip Holding B.V. Method for forming film by plasma-assisted deposition using two-frequency combined pulsed RF power
US9142393B2 (en) 2013-05-23 2015-09-22 Asm Ip Holding B.V. Method for cleaning reaction chamber using pre-cleaning process
US8900467B1 (en) 2013-05-25 2014-12-02 HGST Netherlands B.V. Method for making a chemical contrast pattern using block copolymers and sequential infiltration synthesis
USD726365S1 (en) 2013-05-29 2015-04-07 Sis Resources Ltd. Mouthpiece plug for electronic cigarette
WO2014194176A1 (en) 2013-05-30 2014-12-04 Knowles Capital Formation Inc. Wireless culinary probe calibration method and system
US9605736B1 (en) 2013-05-31 2017-03-28 Rct Systems, Inc. High temperature electromagnetic actuator
US9552979B2 (en) 2013-05-31 2017-01-24 Asm Ip Holding B.V. Cyclic aluminum nitride deposition in a batch reactor
TWI609991B (zh) 2013-06-05 2018-01-01 維克儀器公司 具有熱一致性改善特色的晶圓舟盒
US8895395B1 (en) 2013-06-06 2014-11-25 International Business Machines Corporation Reduced resistance SiGe FinFET devices and method of forming same
US9117657B2 (en) 2013-06-07 2015-08-25 Asm Ip Holding B.V. Method for filling recesses using pre-treatment with hydrocarbon-containing gas
US9245740B2 (en) 2013-06-07 2016-01-26 Dnf Co., Ltd. Amino-silyl amine compound, method for preparing the same and silicon-containing thin-film using the same
CN104233226B (zh) 2013-06-09 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种原子层沉积设备
US9123510B2 (en) 2013-06-12 2015-09-01 ASM IP Holding, B.V. Method for controlling in-plane uniformity of substrate processed by plasma-assisted process
WO2014200815A1 (en) 2013-06-14 2014-12-18 Veeco Ald Inc. Performing atomic layer deposition on large substrate using scanning reactors
USD794185S1 (en) 2013-06-17 2017-08-08 Q-Med Ab Syringe part
US20140367043A1 (en) 2013-06-17 2014-12-18 Applied Materials, Inc. Method for fast and repeatable plasma ignition and tuning in plasma chambers
CN104244620B (zh) 2013-06-19 2017-05-31 上海微电子装备有限公司 一种大型半导体设备集约型装配柜体
CN109950318B (zh) 2013-06-20 2022-06-10 英特尔公司 具有掺杂的子鳍片区域的非平面半导体器件及其制造方法
US20160118290A1 (en) 2013-06-26 2016-04-28 Bruce Mackedanz Vertical no-spin process chamber
WO2014210328A1 (en) 2013-06-26 2014-12-31 Applied Materials, Inc. Methods of depositing a metal alloy film
US20150004798A1 (en) 2013-06-28 2015-01-01 Lam Research Corporation Chemical deposition chamber having gas seal
DE112014003144T5 (de) 2013-07-02 2016-03-31 Ultratech, Inc. Ausbildung von Heteroepitaxieschichten mit schneller thermischer Bearbeitung, um Gitterversetzungen zu entfernen
US9677176B2 (en) 2013-07-03 2017-06-13 Novellus Systems, Inc. Multi-plenum, dual-temperature showerhead
US9490149B2 (en) 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
USD705745S1 (en) 2013-07-08 2014-05-27 Witricity Corporation Printed resonator coil
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
JP5861676B2 (ja) 2013-07-08 2016-02-16 株式会社安川電機 吸着構造、ロボットハンドおよびロボット
US8993054B2 (en) 2013-07-12 2015-03-31 Asm Ip Holding B.V. Method and system to reduce outgassing in a reaction chamber
US8940646B1 (en) 2013-07-12 2015-01-27 Lam Research Corporation Sequential precursor dosing in an ALD multi-station/batch reactor
US9099423B2 (en) 2013-07-12 2015-08-04 Asm Ip Holding B.V. Doped semiconductor films and processing
US20150020848A1 (en) 2013-07-19 2015-01-22 Lam Research Corporation Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
JP6116425B2 (ja) 2013-07-19 2017-04-19 大陽日酸株式会社 金属薄膜の製膜方法
US9018111B2 (en) 2013-07-22 2015-04-28 Asm Ip Holding B.V. Semiconductor reaction chamber with plasma capabilities
JP6087236B2 (ja) 2013-07-24 2017-03-01 東京エレクトロン株式会社 成膜方法
US20150030766A1 (en) 2013-07-25 2015-01-29 Novellus Systems, Inc. Pedestal bottom clean for improved fluorine utilization and integrated symmetric foreline
US9994954B2 (en) 2013-07-26 2018-06-12 Versum Materials Us, Llc Volatile dihydropyrazinly and dihydropyrazine metal complexes
US9663546B2 (en) 2013-07-26 2017-05-30 President And Fellows Of Harvard College Metal amides of cyclic amines
CN104342637B (zh) 2013-07-26 2017-02-15 北京北方微电子基地设备工艺研究中心有限责任公司 一种原子层沉积设备
GB201313850D0 (en) 2013-08-02 2013-09-18 Johnson Matthey Plc Getter composition
US9099393B2 (en) 2013-08-05 2015-08-04 International Business Machines Corporation Enabling enhanced reliability and mobility for replacement gate planar and FinFET structures
USD784276S1 (en) 2013-08-06 2017-04-18 Applied Materials, Inc. Susceptor assembly
US8986562B2 (en) 2013-08-07 2015-03-24 Ultratech, Inc. Methods of laser processing photoresist in a gaseous environment
US9396934B2 (en) 2013-08-14 2016-07-19 Asm Ip Holding B.V. Methods of forming films including germanium tin and structures and devices including the films
US9793115B2 (en) 2013-08-14 2017-10-17 Asm Ip Holding B.V. Structures and devices including germanium-tin films and methods of forming same
US8900999B1 (en) 2013-08-16 2014-12-02 Applied Materials, Inc. Low temperature high pressure high H2/WF6 ratio W process for 3D NAND application
WO2015026230A1 (en) 2013-08-19 2015-02-26 Asm Ip Holding B.V. Twin-assembly of diverging semiconductor processing systems
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
JP6689020B2 (ja) 2013-08-21 2020-04-28 東京エレクトロン株式会社 プラズマ処理装置
US9190263B2 (en) 2013-08-22 2015-11-17 Asm Ip Holding B.V. Method for forming SiOCH film using organoaminosilane annealing
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
GB2517697A (en) 2013-08-27 2015-03-04 Ibm Compound semiconductor structure
US9136108B2 (en) 2013-09-04 2015-09-15 Asm Ip Holding B.V. Method for restoring porous surface of dielectric layer by UV light-assisted ALD
US9484199B2 (en) 2013-09-06 2016-11-01 Applied Materials, Inc. PECVD microcrystalline silicon germanium (SiGe)
JP6338462B2 (ja) 2013-09-11 2018-06-06 東京エレクトロン株式会社 プラズマ処理装置
USD724553S1 (en) 2013-09-13 2015-03-17 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
USD716742S1 (en) 2013-09-13 2014-11-04 Asm Ip Holding B.V. Substrate supporter for semiconductor deposition apparatus
US10312127B2 (en) 2013-09-16 2019-06-04 Applied Materials, Inc. Compliant robot blade for defect reduction
US9284642B2 (en) 2013-09-19 2016-03-15 Asm Ip Holding B.V. Method for forming oxide film by plasma-assisted processing
US10453675B2 (en) 2013-09-20 2019-10-22 Versum Materials Us, Llc Organoaminosilane precursors and methods for depositing films comprising same
US9378971B1 (en) 2014-12-04 2016-06-28 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US8969169B1 (en) 2013-09-20 2015-03-03 Intermolecular, Inc. DRAM MIM capacitor using non-noble electrodes
US8900951B1 (en) 2013-09-24 2014-12-02 International Business Machines Corporation Gate-all-around nanowire MOSFET and method of formation
CN105556654B (zh) 2013-09-26 2019-07-26 应用材料公司 用于传送基板的气动终端受动器装置、基板传送系统与方法
WO2015047832A1 (en) 2013-09-26 2015-04-02 Veeco Ald Inc. Printing of colored pattern using atommic layer deposition
US9018103B2 (en) 2013-09-26 2015-04-28 Lam Research Corporation High aspect ratio etch with combination mask
CN105849221B (zh) 2013-09-27 2019-06-18 乔治洛德方法研究和开发液化空气有限公司 胺取代的三甲硅烷基胺和三-二甲硅烷基胺化合物
US9240412B2 (en) 2013-09-27 2016-01-19 Asm Ip Holding B.V. Semiconductor structure and device and methods of forming same using selective epitaxial process
USD756929S1 (en) 2013-09-30 2016-05-24 Danfoss A/S Electrical connector for refrigeration valve
JP6068661B2 (ja) 2013-09-30 2017-01-25 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム
TWI649803B (zh) 2013-09-30 2019-02-01 蘭姆研究公司 具有電漿輔助式原子層沉積及電漿輔助式化學氣相沉積合成法之深寬比可變的特徵物之間隙填充
US9905415B2 (en) 2013-10-03 2018-02-27 Versum Materials Us, Llc Methods for depositing silicon nitride films
US9396986B2 (en) 2013-10-04 2016-07-19 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming a trench structure
JP6267080B2 (ja) 2013-10-07 2018-01-24 東京エレクトロン株式会社 シリコン窒化物膜の成膜方法および成膜装置
US9556516B2 (en) 2013-10-09 2017-01-31 ASM IP Holding B.V Method for forming Ti-containing film by PEALD using TDMAT or TDEAT
EP3058115A1 (en) 2013-10-15 2016-08-24 Veeco ALD Inc. Fast atomic layer deposition process using seed precursor
US9576790B2 (en) 2013-10-16 2017-02-21 Asm Ip Holding B.V. Deposition of boron and carbon containing materials
US9034717B2 (en) 2013-10-16 2015-05-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor-on-insulator structure and method of fabricating the same
US10214817B2 (en) 2013-10-16 2019-02-26 The Board Of Trustees Of The University Of Illinois Multi-metal films, alternating film multilayers, formation methods and deposition system
KR101557016B1 (ko) 2013-10-17 2015-10-05 주식회사 유진테크 기판 처리장치
US20150111374A1 (en) 2013-10-18 2015-04-23 International Business Machines Corporation Surface treatment in a dep-etch-dep process
JP5847783B2 (ja) 2013-10-21 2016-01-27 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体
US9145607B2 (en) 2013-10-22 2015-09-29 Lam Research Corporation Tandem source activation for cyclical deposition of films
US20150118863A1 (en) 2013-10-25 2015-04-30 Lam Research Corporation Methods and apparatus for forming flowable dielectric films having low porosity
CN106232611A (zh) 2013-10-28 2016-12-14 赛孚思科技有限公司 包含酰胺基亚胺配位体的金属配合物
US9343308B2 (en) 2013-10-28 2016-05-17 Asm Ip Holding B.V. Method for trimming carbon-containing film at reduced trimming rate
KR20150050638A (ko) 2013-10-29 2015-05-11 에이에스엠 아이피 홀딩 비.브이. 증착 장치
US9029272B1 (en) 2013-10-31 2015-05-12 Asm Ip Holding B.V. Method for treating SiOCH film with hydrogen plasma
TW201522696A (zh) 2013-11-01 2015-06-16 Applied Materials Inc 使用遠端電漿ｃｖｄ技術的低溫氮化矽膜
US20150126036A1 (en) 2013-11-05 2015-05-07 Tokyo Electron Limited Controlling etch rate drift and particles during plasma processing
US10443127B2 (en) 2013-11-05 2019-10-15 Taiwan Semiconductor Manufacturing Company Limited System and method for supplying a precursor for an atomic layer deposition (ALD) process
US20150125628A1 (en) 2013-11-06 2015-05-07 Asm Ip Holding B.V. Method of depositing thin film
CN104630735B (zh) 2013-11-06 2017-12-19 北京北方华创微电子装备有限公司 温度监控装置及等离子体加工设备
KR20150052996A (ko) 2013-11-07 2015-05-15 삼성디스플레이 주식회사 기판 이송 장치 및 이를 포함하는 박막 증착 장치
USD739222S1 (en) 2013-11-13 2015-09-22 Jeff Chadbourne Two-piece magnetic clamp
US9605343B2 (en) 2013-11-13 2017-03-28 Asm Ip Holding B.V. Method for forming conformal carbon films, structures conformal carbon film, and system of forming same
US9330937B2 (en) 2013-11-13 2016-05-03 Intermolecular, Inc. Etching of semiconductor structures that include titanium-based layers
KR20220002721A (ko) 2013-11-21 2022-01-06 엔테그리스, 아이엔씨. 플라즈마 시스템에서 사용되는 챔버 구성요소를 위한 표면 코팅
KR20150060086A (ko) 2013-11-25 2015-06-03 주식회사 테라세미콘 클러스터형 배치식 기판처리 시스템
KR101539298B1 (ko) 2013-11-25 2015-07-29 주식회사 엘지실트론 에피택셜 웨이퍼 성장 장치
US9745658B2 (en) 2013-11-25 2017-08-29 Lam Research Corporation Chamber undercoat preparation method for low temperature ALD films
TWI588286B (zh) 2013-11-26 2017-06-21 烏翠泰克股份有限公司 經改良的電漿強化原子層沉積方法、周期及裝置
US10179947B2 (en) 2013-11-26 2019-01-15 Asm Ip Holding B.V. Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition
KR20150061179A (ko) 2013-11-26 2015-06-04 에스케이하이닉스 주식회사 플라즈마 강화 기상 증착
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
KR20150064993A (ko) 2013-12-04 2015-06-12 삼성전자주식회사 반도체 제조 장치
US9355882B2 (en) 2013-12-04 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Transfer module for bowed wafers
US9620382B2 (en) 2013-12-06 2017-04-11 University Of Maryland, College Park Reactor for plasma-based atomic layer etching of materials
TW201525173A (zh) 2013-12-09 2015-07-01 Applied Materials Inc 選擇性層沉積之方法
JP2015115461A (ja) 2013-12-11 2015-06-22 大日本印刷株式会社 微細構造体の欠陥修正方法および製造方法
US9401273B2 (en) 2013-12-11 2016-07-26 Asm Ip Holding B.V. Atomic layer deposition of silicon carbon nitride based materials
TWI678751B (zh) 2013-12-13 2019-12-01 日商昕芙旎雅股份有限公司 設備前端模組（ｅｆｅｍ）
KR102102787B1 (ko) 2013-12-17 2020-04-22 삼성전자주식회사 기판 처리 장치 및 블록커 플레이트 어셈블리
CN114093812A (zh) 2013-12-17 2022-02-25 德克萨斯仪器股份有限公司 使用光刻-冷冻-光刻-蚀刻工艺的细长接触件
US10431489B2 (en) 2013-12-17 2019-10-01 Applied Materials, Inc. Substrate support apparatus having reduced substrate particle generation
JP5859586B2 (ja) 2013-12-27 2016-02-10 株式会社日立国際電気 基板処理システム、半導体装置の製造方法および記録媒体
WO2015091781A2 (en) 2013-12-18 2015-06-25 Imec Vzw Method of producing transition metal dichalcogenide layer
US9478419B2 (en) 2013-12-18 2016-10-25 Asm Ip Holding B.V. Sulfur-containing thin films
US9245742B2 (en) 2013-12-18 2016-01-26 Asm Ip Holding B.V. Sulfur-containing thin films
US9362385B2 (en) 2013-12-18 2016-06-07 Taiwan Semiconductor Manufacturing Company Ltd. Method for tuning threshold voltage of semiconductor device with metal gate structure
US20150179640A1 (en) 2013-12-19 2015-06-25 Globalfoundries Inc. Common fabrication of different semiconductor devices with different threshold voltages
JP6230900B2 (ja) 2013-12-19 2017-11-15 東京エレクトロン株式会社 基板処理装置
US20150176124A1 (en) 2013-12-19 2015-06-25 Intermolecular, Inc. Methods for Rapid Generation of ALD Saturation Curves Using Segmented Spatial ALD
KR20150073251A (ko) 2013-12-20 2015-07-01 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
US9353440B2 (en) 2013-12-20 2016-05-31 Applied Materials, Inc. Dual-direction chemical delivery system for ALD/CVD chambers
KR102146705B1 (ko) 2013-12-23 2020-08-21 삼성전자주식회사 반도체 소자의 배선 구조물 및 그 형성 방법
US9698035B2 (en) 2013-12-23 2017-07-04 Lam Research Corporation Microstructures for improved wafer handling
US20150175467A1 (en) 2013-12-23 2015-06-25 Infineon Technologies Austria Ag Mold, method for producing a mold, and method for forming a mold article
US9406547B2 (en) 2013-12-24 2016-08-02 Intel Corporation Techniques for trench isolation using flowable dielectric materials
TWI650832B (zh) 2013-12-26 2019-02-11 維克儀器公司 用於化學氣相沉積系統之具有隔熱蓋的晶圓載具
US9159561B2 (en) 2013-12-26 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method for overcoming broken line and photoresist scum issues in tri-layer photoresist patterning
US20150184287A1 (en) 2013-12-26 2015-07-02 Intermolecular, Inc. Systems and Methods for Parallel Combinatorial Vapor Deposition Processing
JP6247095B2 (ja) 2013-12-27 2017-12-13 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
CN104752351B (zh) 2013-12-30 2019-03-29 中芯国际集成电路制造(上海)有限公司 半导体器件的形成方法
TWI654336B (zh) 2013-12-30 2019-03-21 美商蘭姆研究公司 具有脈衝式電漿曝露之電漿輔助式原子層沉積
US9219006B2 (en) 2014-01-13 2015-12-22 Applied Materials, Inc. Flowable carbon film by FCVD hardware using remote plasma PECVD
WO2015156871A2 (en) 2014-01-15 2015-10-15 Forrest Stephen R Forrest Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer
EP3095128B1 (en) 2014-01-17 2023-11-22 TRUMPF Photonic Components GmbH Heating system comprising semiconductor light sources
US9328416B2 (en) 2014-01-17 2016-05-03 Lam Research Corporation Method for the reduction of defectivity in vapor deposited films
US9677172B2 (en) 2014-01-21 2017-06-13 Applied Materials, Inc. Methods for forming a cobalt-ruthenium liner layer for interconnect structures
KR101846763B1 (ko) 2014-01-23 2018-04-06 울트라테크 인크. 증기 전달 시스템
JP6324739B2 (ja) 2014-01-27 2018-05-16 株式会社Kelk 半導体ウェーハの温度制御装置、及び半導体ウェーハの温度制御方法
JP6208588B2 (ja) 2014-01-28 2017-10-04 東京エレクトロン株式会社 支持機構及び基板処理装置
KR102155181B1 (ko) 2014-01-28 2020-09-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
JP5805227B2 (ja) 2014-01-28 2015-11-04 東京エレクトロン株式会社 プラズマ処理装置
WO2015115202A1 (ja) 2014-01-28 2015-08-06 三菱電機株式会社 炭化珪素半導体装置及び炭化珪素半導体装置の製造方法
TWI639179B (zh) 2014-01-31 2018-10-21 美商蘭姆研究公司 真空整合硬遮罩製程及設備
US9502218B2 (en) 2014-01-31 2016-11-22 Applied Materials, Inc. RPS assisted RF plasma source for semiconductor processing
KR102243956B1 (ko) 2014-01-31 2021-04-22 어플라이드 머티어리얼스, 인코포레이티드 챔버 코팅들
USD724701S1 (en) 2014-02-04 2015-03-17 ASM IP Holding, B.V. Shower plate
US9370863B2 (en) 2014-02-04 2016-06-21 Asm Ip Holding B.V. Anti-slip end-effector for transporting workpiece
USD732644S1 (en) 2014-02-04 2015-06-23 Asm Ip Holding B.V. Top plate
USD720838S1 (en) 2014-02-04 2015-01-06 Asm Ip Holding B.V. Shower plate
USD725168S1 (en) 2014-02-04 2015-03-24 Asm Ip Holding B.V. Heater block
USD732145S1 (en) 2014-02-04 2015-06-16 Asm Ip Holding B.V. Shower plate
USD726884S1 (en) 2014-02-04 2015-04-14 Asm Ip Holding B.V. Heater block
TWI661072B (zh) 2014-02-04 2019-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沈積
US9214340B2 (en) 2014-02-05 2015-12-15 Applied Materials, Inc. Apparatus and method of forming an indium gallium zinc oxide layer
WO2015119794A1 (en) 2014-02-06 2015-08-13 Veeco Ald Inc. Spatial deposition of material using short-distance reciprocating motions
US8993457B1 (en) 2014-02-06 2015-03-31 Cypress Semiconductor Corporation Method of fabricating a charge-trapping gate stack using a CMOS process flow
US9416447B2 (en) 2014-02-07 2016-08-16 HGST Netherlands B.V. Method for line density multiplication using block copolymers and sequential infiltration synthesis
US11158526B2 (en) 2014-02-07 2021-10-26 Applied Materials, Inc. Temperature controlled substrate support assembly
US9281211B2 (en) 2014-02-10 2016-03-08 International Business Machines Corporation Nanoscale interconnect structure
US9721947B2 (en) 2014-02-12 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of manufacturing
USD733257S1 (en) 2014-02-14 2015-06-30 Hansgrohe Se Overhead shower
JP6249815B2 (ja) 2014-02-17 2017-12-20 株式会社Ihi 耐熱複合材料の製造方法及び製造装置
CN203721699U (zh) 2014-02-20 2014-07-16 北京七星华创电子股份有限公司 一种盘状物的夹持装置及盘状物的旋转平台
JP6396699B2 (ja) 2014-02-24 2018-09-26 東京エレクトロン株式会社 エッチング方法
US9916995B2 (en) 2014-02-24 2018-03-13 Lam Research Corporation Compact substrate processing tool with multi-station processing and pre-processing and/or post-processing stations
US9576952B2 (en) 2014-02-25 2017-02-21 Globalfoundries Inc. Integrated circuits with varying gate structures and fabrication methods
KR102233577B1 (ko) 2014-02-25 2021-03-30 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6303592B2 (ja) 2014-02-25 2018-04-04 東京エレクトロン株式会社 基板処理装置
US10683571B2 (en) 2014-02-25 2020-06-16 Asm Ip Holding B.V. Gas supply manifold and method of supplying gases to chamber using same
US9362180B2 (en) 2014-02-25 2016-06-07 Globalfoundries Inc. Integrated circuit having multiple threshold voltages
JP5926753B2 (ja) 2014-02-26 2016-05-25 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
US9425078B2 (en) 2014-02-26 2016-08-23 Lam Research Corporation Inhibitor plasma mediated atomic layer deposition for seamless feature fill
WO2015127614A1 (zh) 2014-02-27 2015-09-03 深圳市祥涛瑞杰贸易有限公司 空气净化结构和空气净化系统
KR102267508B1 (ko) 2014-02-27 2021-06-22 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
JP6278751B2 (ja) 2014-03-04 2018-02-14 東京エレクトロン株式会社 搬送方法及び基板処理装置
US9472410B2 (en) 2014-03-05 2016-10-18 Applied Materials, Inc. Pixelated capacitance controlled ESC
US20150255324A1 (en) 2014-03-06 2015-09-10 Applied Materials, Inc. Seamless gap-fill with spatial atomic layer deposition
KR20150104817A (ko) 2014-03-06 2015-09-16 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
JP6204231B2 (ja) 2014-03-11 2017-09-27 大陽日酸株式会社 空気液化分離装置及び方法
JP2015173230A (ja) 2014-03-12 2015-10-01 株式会社東芝 半導体装置及び半導体装置の製造方法
US10109534B2 (en) 2014-03-14 2018-10-23 Applied Materials, Inc. Multi-threshold voltage (Vt) workfunction metal by selective atomic layer deposition (ALD)
JP6379550B2 (ja) 2014-03-18 2018-08-29 東京エレクトロン株式会社 成膜装置
US9447498B2 (en) 2014-03-18 2016-09-20 Asm Ip Holding B.V. Method for performing uniform processing in gas system-sharing multiple reaction chambers
US10167557B2 (en) 2014-03-18 2019-01-01 Asm Ip Holding B.V. Gas distribution system, reactor including the system, and methods of using the same
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US20150267295A1 (en) 2014-03-19 2015-09-24 Asm Ip Holding B.V. Removable substrate tray and assembly and reactor including same
KR102308587B1 (ko) 2014-03-19 2021-10-01 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
US9299557B2 (en) 2014-03-19 2016-03-29 Asm Ip Holding B.V. Plasma pre-clean module and process
JP5944429B2 (ja) 2014-03-20 2016-07-05 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
WO2015140983A1 (ja) 2014-03-20 2015-09-24 株式会社 東芝 非水電解質電池用活物質、非水電解質電池用電極、非水電解質二次電池、電池パック及び非水電解質電池用活物質の製造方法
JP6306151B2 (ja) 2014-03-20 2018-04-04 株式会社日立国際電気 基板処理装置、断熱構造体及び半導体装置の製造方法
JP6270575B2 (ja) 2014-03-24 2018-01-31 株式会社日立国際電気 反応管、基板処理装置及び半導体装置の製造方法
JP6304592B2 (ja) 2014-03-25 2018-04-04 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP5941491B2 (ja) 2014-03-26 2016-06-29 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法並びにプログラム
US9583337B2 (en) 2014-03-26 2017-02-28 Ultratech, Inc. Oxygen radical enhanced atomic-layer deposition using ozone plasma
US20150275355A1 (en) 2014-03-26 2015-10-01 Air Products And Chemicals, Inc. Compositions and methods for the deposition of silicon oxide films
JP6204570B2 (ja) 2014-03-28 2017-09-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
JP6254036B2 (ja) 2014-03-31 2017-12-27 三菱重工業株式会社 三次元積層装置及び三次元積層方法
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
US9637823B2 (en) 2014-03-31 2017-05-02 Asm Ip Holding B.V. Plasma atomic layer deposition
US20150280051A1 (en) 2014-04-01 2015-10-01 Tsmc Solar Ltd. Diffuser head apparatus and method of gas distribution
US9343350B2 (en) 2014-04-03 2016-05-17 Asm Ip Holding B.V. Anti-slip end effector for transporting workpiece using van der waals force
US9269590B2 (en) 2014-04-07 2016-02-23 Applied Materials, Inc. Spacer formation
US9663857B2 (en) 2014-04-07 2017-05-30 Asm Ip Holding B.V. Method for stabilizing reaction chamber pressure
KR102094470B1 (ko) 2014-04-08 2020-03-27 삼성전자주식회사 반도체 소자 및 그 제조 방법
US10047435B2 (en) 2014-04-16 2018-08-14 Asm Ip Holding B.V. Dual selective deposition
US9404587B2 (en) 2014-04-24 2016-08-02 ASM IP Holding B.V Lockout tagout for semiconductor vacuum valve
US9184054B1 (en) 2014-04-25 2015-11-10 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit patterning
US9976211B2 (en) 2014-04-25 2018-05-22 Applied Materials, Inc. Plasma erosion resistant thin film coating for high temperature application
US20150311043A1 (en) 2014-04-25 2015-10-29 Applied Materials, Inc. Chamber component with fluorinated thin film coating
US9343294B2 (en) 2014-04-28 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structure having air gap and method of forming the same
US9464352B2 (en) 2014-05-02 2016-10-11 Asm Ip Holding B.V. Low-oxidation plasma-assisted process
JP6324800B2 (ja) 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
WO2015170330A1 (en) 2014-05-08 2015-11-12 Stratasys Ltd. Method and apparatus for 3d printing by selective sintering
US9917295B2 (en) 2014-05-13 2018-03-13 Uchicago Argonne, Llc Methods for using atomic layer deposition to produce a film for solid state electrolytes and protective electrode coatings for lithium batteries
TWI518751B (zh) 2014-05-14 2016-01-21 國立清華大學 成分元素濃度漸變分佈之載子通道及其製作方法
US9343343B2 (en) 2014-05-19 2016-05-17 Asm Ip Holding B.V. Method for reducing particle generation at bevel portion of substrate
US9257557B2 (en) 2014-05-20 2016-02-09 Globalfoundries Inc. Semiconductor structure with self-aligned wells and multiple channel materials
US9577192B2 (en) 2014-05-21 2017-02-21 Sony Semiconductor Solutions Corporation Method for forming a metal cap in a semiconductor memory device
CN106463445B (zh) 2014-05-21 2020-09-04 应用材料公司 热处理基座
USD733262S1 (en) 2014-05-22 2015-06-30 Young Boung Kang Disposer of connection member for kitchen sink bowl
US9881788B2 (en) 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
JP2016005900A (ja) 2014-05-27 2016-01-14 パナソニックＩｐマネジメント株式会社 ガスバリア膜、ガスバリア膜付きフィルム基板およびこれを備えた電子デバイス。
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
KR102162733B1 (ko) 2014-05-29 2020-10-07 에스케이하이닉스 주식회사 듀얼일함수 매립게이트형 트랜지스터 및 그 제조 방법, 그를 구비한 전자장치
US20150348755A1 (en) 2014-05-29 2015-12-03 Charm Engineering Co., Ltd. Gas distribution apparatus and substrate processing apparatus including same
WO2015182699A1 (ja) 2014-05-30 2015-12-03 株式会社 荏原製作所 真空排気システム
BR112016027345B1 (pt) 2014-05-30 2021-08-03 Eltek S.P.A Sensor de nível para detecção do nível de um meio contido em um reservatório, método para controlar um sensor de nível e reservatório
JP6301203B2 (ja) 2014-06-02 2018-03-28 株式会社ディスコ チップの製造方法
JP6225837B2 (ja) 2014-06-04 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
EP2953162A1 (en) 2014-06-06 2015-12-09 IMEC vzw Method for manufacturing a semiconductor device comprising transistors each having a different effective work function
US9773683B2 (en) 2014-06-09 2017-09-26 American Air Liquide, Inc. Atomic layer or cyclic plasma etching chemistries and processes
US10998228B2 (en) 2014-06-12 2021-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Self-aligned interconnect with protection layer
USD743513S1 (en) 2014-06-13 2015-11-17 Asm Ip Holding B.V. Seal ring
US9978632B2 (en) 2014-06-13 2018-05-22 Applied Materials, Inc. Direct lift process apparatus
DE102014108352A1 (de) 2014-06-13 2015-12-17 Forschungszentrum Jülich GmbH Verfahren zum Abscheiden einer Kristallschicht bei niedrigen Temperaturen, insbesondere einer photolumineszierenden IV-IV-Schicht auf einem IV-Substrat, sowie ein eine derartige Schicht aufweisendes optoelektronisches Bauelement
JP6225842B2 (ja) 2014-06-16 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
KR102195003B1 (ko) 2014-06-18 2020-12-24 삼성전자주식회사 반도체 다이오드, 가변 저항 메모리 장치 및 가변 저항 메모리 장치의 제조 방법
USD753629S1 (en) 2014-06-19 2016-04-12 Yamaha Corporation Speaker
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
CN104022121B (zh) 2014-06-23 2017-05-03 中国科学院微电子研究所 三维半导体器件及其制造方法
US20150367253A1 (en) 2014-06-24 2015-12-24 Us Synthetic Corporation Photoluminescent thin-layer chromatography plate and methods for making same
US20150380296A1 (en) 2014-06-25 2015-12-31 Lam Research Corporation Cleaning of carbon-based contaminants in metal interconnects for interconnect capping applications
KR102287271B1 (ko) 2014-06-26 2021-08-06 인텔 코포레이션 도핑된 하위 핀 영역을 가진 오메가 핀을 갖는 비 평면 반도체 디바이스 및 이것을 제조하는 방법
US9825191B2 (en) 2014-06-27 2017-11-21 Sunpower Corporation Passivation of light-receiving surfaces of solar cells with high energy gap (EG) materials
JP6629312B2 (ja) 2014-07-03 2020-01-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 選択的堆積のための方法及び装置
US9911579B2 (en) 2014-07-03 2018-03-06 Applied Materials, Inc. Showerhead having a detachable high resistivity gas distribution plate
USD736348S1 (en) 2014-07-07 2015-08-11 Jiangmen Triumph Rain Showers Co., LTD Spray head for a shower
JP5837962B1 (ja) 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
US9349620B2 (en) 2014-07-09 2016-05-24 Asm Ip Holdings B.V. Apparatus and method for pre-baking substrate upstream of process chamber
CN106463453A (zh) 2014-07-10 2017-02-22 应用材料公司 在化学气相沉积反应器中的基座的设计
US9617637B2 (en) 2014-07-15 2017-04-11 Lam Research Corporation Systems and methods for improving deposition rate uniformity and reducing defects in substrate processing systems
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
KR102262887B1 (ko) 2014-07-21 2021-06-08 삼성전자주식회사 반도체 장치 및 그 제조 방법
US10192717B2 (en) 2014-07-21 2019-01-29 Applied Materials, Inc. Conditioning remote plasma source for enhanced performance having repeatable etch and deposition rates
FR3024051A1 (fr) 2014-07-28 2016-01-29 Total Raffinage Chimie Chambre a plaques en materiau ceramique pour unite de craquage catalytique fluide
US10858737B2 (en) 2014-07-28 2020-12-08 Asm Ip Holding B.V. Showerhead assembly and components thereof
US9617638B2 (en) 2014-07-30 2017-04-11 Lam Research Corporation Methods and apparatuses for showerhead backside parasitic plasma suppression in a secondary purge enabled ALD system
US9548188B2 (en) 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
US9970108B2 (en) 2014-08-01 2018-05-15 Lam Research Corporation Systems and methods for vapor delivery in a substrate processing system
US9543180B2 (en) 2014-08-01 2017-01-10 Asm Ip Holding B.V. Apparatus and method for transporting wafers between wafer carrier and process tool under vacuum
US10176996B2 (en) 2014-08-06 2019-01-08 Globalfoundries Inc. Replacement metal gate and fabrication process with reduced lithography steps
USD751176S1 (en) 2014-08-07 2016-03-08 Hansgrohe Se Overhead shower
CN104197411B (zh) 2014-08-08 2017-07-28 珠海格力电器股份有限公司 空调器的室内机及空调器
TWI656232B (zh) 2014-08-14 2019-04-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 鉬組成物及其用於形成氧化鉬膜之用途
KR20160021958A (ko) 2014-08-18 2016-02-29 삼성전자주식회사 플라즈마 처리 장치 및 기판 처리 방법
US9252238B1 (en) 2014-08-18 2016-02-02 Lam Research Corporation Semiconductor structures with coplanar recessed gate layers and fabrication methods
US9890456B2 (en) 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9349637B2 (en) 2014-08-21 2016-05-24 Lam Research Corporation Method for void-free cobalt gap fill
USD782419S1 (en) 2014-08-22 2017-03-28 Christopher C. Willette Female keyed lamp plug
US9318319B2 (en) 2014-08-27 2016-04-19 Ultratech, Inc. Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation
CN104201108B (zh) 2014-08-27 2017-11-07 上海集成电路研发中心有限公司 SiGe源/漏区的制造方法
US9362131B2 (en) 2014-08-29 2016-06-07 Applied Materials, Inc. Fast atomic layer etch process using an electron beam
WO2016035675A1 (ja) 2014-09-05 2016-03-10 ローツェ株式会社 ロードポート及びロードポートの雰囲気置換方法
US9410742B2 (en) 2014-09-08 2016-08-09 Tokyo Electron Limited High capacity magnetic annealing system and method of operating
US10224222B2 (en) 2014-09-09 2019-03-05 Asm Ip Holding B.V. Assembly of liner and flange for vertical furnace as well as a vertical process furnace
USD742202S1 (en) 2014-09-11 2015-11-03 Thomas Jason Cyphers Sign frame key
TW201613231A (en) 2014-09-16 2016-04-01 Huaquan Energy Geometry and insulation components of motor mechanism
USD764196S1 (en) 2014-09-17 2016-08-23 Sheryl Handler Stool
US9576792B2 (en) 2014-09-17 2017-02-21 Asm Ip Holding B.V. Deposition of SiN
EP3198651A4 (en) 2014-09-24 2018-05-02 Intel Corporation Scaled tfet transistor formed using nanowire with surface termination
WO2016046909A1 (ja) 2014-09-24 2016-03-31 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、半導体装置およびプログラム
US9214333B1 (en) 2014-09-24 2015-12-15 Lam Research Corporation Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
US9478414B2 (en) 2014-09-26 2016-10-25 Asm Ip Holding B.V. Method for hydrophobization of surface of silicon-containing film by ALD
US9362107B2 (en) 2014-09-30 2016-06-07 Applied Materials, Inc. Flowable low-k dielectric gapfill treatment
SG11201702331YA (en) 2014-09-30 2017-04-27 Hitachi Int Electric Inc Substrate processing device, manufacturing method for semiconductor device, and reaction tube
US10192770B2 (en) 2014-10-03 2019-01-29 Applied Materials, Inc. Spring-loaded pins for susceptor assembly and processing methods using same
US9558946B2 (en) 2014-10-03 2017-01-31 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods of forming FinFETs
US9331093B2 (en) 2014-10-03 2016-05-03 Sandisk Technologies Inc. Three dimensional NAND device with silicon germanium heterostructure channel
US9657845B2 (en) 2014-10-07 2017-05-23 Asm Ip Holding B.V. Variable conductance gas distribution apparatus and method
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
EP3009482B1 (en) 2014-10-13 2018-10-03 Heraeus Deutschland GmbH & Co. KG Copper coloured paint
USD759137S1 (en) 2014-10-14 2016-06-14 Victor Equipment Company Consumables adapter for a welding torch
US10460949B2 (en) 2014-10-20 2019-10-29 Tokyo Electron Limited Substrate processing apparatus, substrate processing method and storage medium
US9530787B2 (en) 2014-10-20 2016-12-27 Sandisk Technologies Llc Batch contacts for multiple electrically conductive layers
JP2016086099A (ja) 2014-10-27 2016-05-19 東京エレクトロン株式会社 プラズマ処理装置
KR20170070281A (ko) 2014-10-30 2017-06-21 어플라이드 머티어리얼스, 인코포레이티드 저온에서 얇은 에피택셜 필름들을 성장시키는 방법
CN104307264A (zh) 2014-10-31 2015-01-28 苏州博菡环保科技有限公司 空气净化器
KR101535573B1 (ko) 2014-11-04 2015-07-13 연세대학교 산학협력단 전이금속 칼코겐 화합물 합성 방법
US9305836B1 (en) 2014-11-10 2016-04-05 International Business Machines Corporation Air gap semiconductor structure with selective cap bilayer
KR102268187B1 (ko) 2014-11-10 2021-06-24 삼성전자주식회사 자기 기억 소자 및 그 제조 방법
US10269614B2 (en) 2014-11-12 2019-04-23 Applied Materials, Inc. Susceptor design to reduce edge thermal peak
KR102300403B1 (ko) 2014-11-19 2021-09-09 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
JP2016098406A (ja) 2014-11-21 2016-05-30 東京エレクトロン株式会社 モリブデン膜の成膜方法
CN107208262B (zh) 2014-11-21 2019-09-13 应用材料公司 醇类辅助ald膜沉积
US9564312B2 (en) 2014-11-24 2017-02-07 Lam Research Corporation Selective inhibition in atomic layer deposition of silicon-containing films
US9589790B2 (en) 2014-11-24 2017-03-07 Lam Research Corporation Method of depositing ammonia free and chlorine free conformal silicon nitride film
JP6086892B2 (ja) 2014-11-25 2017-03-01 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6354539B2 (ja) 2014-11-25 2018-07-11 東京エレクトロン株式会社 基板処理装置、基板処理方法、記憶媒体
US9837281B2 (en) 2014-11-26 2017-12-05 Asm Ip Holding B.V. Cyclic doped aluminum nitride deposition
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US9885112B2 (en) 2014-12-02 2018-02-06 Asm Ip Holdings B.V. Film forming apparatus
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9384998B2 (en) 2014-12-04 2016-07-05 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9406683B2 (en) 2014-12-04 2016-08-02 International Business Machines Corporation Wet bottling process for small diameter deep trench capacitors
US9620377B2 (en) 2014-12-04 2017-04-11 Lab Research Corporation Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
US9142764B1 (en) 2014-12-08 2015-09-22 Intermolecular, Inc. Methods of forming embedded resistors for resistive random access memory cells
KR102307633B1 (ko) 2014-12-10 2021-10-06 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR20160070359A (ko) 2014-12-10 2016-06-20 삼성전자주식회사 가스 인젝터 및 이를 갖는 웨이퍼 처리 장치
US9951421B2 (en) 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
JP6459462B2 (ja) 2014-12-11 2019-01-30 東京エレクトロン株式会社 リーク判定方法、基板処理装置及び記憶媒体
US20160168699A1 (en) 2014-12-12 2016-06-16 Asm Ip Holding B.V. Method for depositing metal-containing film using particle-reduction step
US10062564B2 (en) 2014-12-15 2018-08-28 Tokyo Electron Limited Method of selective gas phase film deposition on a substrate by modifying the surface using hydrogen plasma
JP6404111B2 (ja) 2014-12-18 2018-10-10 東京エレクトロン株式会社 プラズマ処理装置
US9820289B1 (en) 2014-12-18 2017-11-14 Sprint Spectrum L.P. Method and system for managing quantity of carriers in air interface connection based on type of content
EP3234987B1 (en) 2014-12-19 2020-09-23 GlobalWafers Co., Ltd. Systems and methods for performing epitaxial smoothing processes on semiconductor structures
CN105762068A (zh) 2014-12-19 2016-07-13 联华电子股份有限公司 半导体元件及其制作方法
KR102263121B1 (ko) 2014-12-22 2021-06-09 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 및 그 제조 방법
US9396961B2 (en) 2014-12-22 2016-07-19 Lam Research Corporation Integrated etch/clean for dielectric etch applications
CN104498895B (zh) 2014-12-23 2017-02-22 国家纳米科学中心 一种超薄氮氧化硅膜材料及其制备方法和用途
JP6322131B2 (ja) 2014-12-24 2018-05-09 東京エレクトロン株式会社 シリコン膜の成膜方法および成膜装置
US9515072B2 (en) 2014-12-26 2016-12-06 Taiwan Semiconductor Manufacturing Company Ltd. FinFET structure and method for manufacturing thereof
US9474163B2 (en) 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US9425041B2 (en) 2015-01-06 2016-08-23 Lam Research Corporation Isotropic atomic layer etch for silicon oxides using no activation
US9324846B1 (en) 2015-01-08 2016-04-26 Globalfoundries Inc. Field plate in heterojunction bipolar transistor with improved break-down voltage
USD753269S1 (en) 2015-01-09 2016-04-05 Asm Ip Holding B.V. Top plate
US9576811B2 (en) 2015-01-12 2017-02-21 Lam Research Corporation Integrating atomic scale processes: ALD (atomic layer deposition) and ALE (atomic layer etch)
WO2016114877A1 (en) 2015-01-12 2016-07-21 Applied Materials, Inc. Support assembly for substrate backside discoloration control
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US9396956B1 (en) 2015-01-16 2016-07-19 Asm Ip Holding B.V. Method of plasma-enhanced atomic layer etching
US9764986B2 (en) 2015-01-22 2017-09-19 Kennametal Inc. Low temperature CVD coatings and applications thereof
TW201639063A (zh) 2015-01-22 2016-11-01 應用材料股份有限公司 批量加熱和冷卻腔室或負載鎖定裝置
US9496040B2 (en) 2015-01-22 2016-11-15 Sandisk Technologies Llc Adaptive multi-page programming methods and apparatus for non-volatile memory
JP6470057B2 (ja) 2015-01-29 2019-02-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US9520295B2 (en) 2015-02-03 2016-12-13 Lam Research Corporation Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems
US9928994B2 (en) 2015-02-03 2018-03-27 Lam Research Corporation Methods for decreasing carbon-hydrogen content of amorphous carbon hardmask films
CN204629865U (zh) 2015-02-03 2015-09-09 宁波永茂电器厂 双单元移动式冷风机
KR102185458B1 (ko) 2015-02-03 2020-12-03 에이에스엠 아이피 홀딩 비.브이. 선택적 퇴적
JP6398761B2 (ja) 2015-02-04 2018-10-03 東京エレクトロン株式会社 基板処理装置
US9736920B2 (en) 2015-02-06 2017-08-15 Mks Instruments, Inc. Apparatus and method for plasma ignition with a self-resonating device
US9963782B2 (en) 2015-02-12 2018-05-08 Asm Ip Holding B.V. Semiconductor manufacturing apparatus
US9478415B2 (en) 2015-02-13 2016-10-25 Asm Ip Holding B.V. Method for forming film having low resistance and shallow junction depth
KR20170117490A (ko) 2015-02-13 2017-10-23 엔테그리스, 아이엔씨. 기판 제품 및 장치의 특성 및 성능을 향상시키기 위한 코팅
US9275834B1 (en) 2015-02-20 2016-03-01 Applied Materials, Inc. Selective titanium nitride etch
US10228291B2 (en) 2015-02-25 2019-03-12 Kokusai Electric Corporation Substrate processing apparatus, and thermocouple
USD765881S1 (en) 2015-02-25 2016-09-06 Aluvision, L.V. Frame element
US10052044B2 (en) 2015-03-06 2018-08-21 Ethicon Llc Time dependent evaluation of sensor data to determine stability, creep, and viscoelastic elements of measures
US9808246B2 (en) 2015-03-06 2017-11-07 Ethicon Endo-Surgery, Llc Method of operating a powered surgical instrument
US10529542B2 (en) 2015-03-11 2020-01-07 Asm Ip Holdings B.V. Cross-flow reactor and method
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
IL237775B (en) 2015-03-16 2019-03-31 Redler Tech Ltd Automatic, highly reliable, fully redundant electornic circuit breaker that includes means for preventing short-circuit overcurrent
JP6477075B2 (ja) 2015-03-17 2019-03-06 東京エレクトロン株式会社 原料ガス供給装置及び成膜装置
US10961617B2 (en) 2015-03-18 2021-03-30 Entegris, Inc. Articles coated with fluoro-annealed films
USD761325S1 (en) 2015-03-19 2016-07-12 Issam N. Abed Rear crankshaft seal housing
JP2016178223A (ja) 2015-03-20 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US10566187B2 (en) 2015-03-20 2020-02-18 Lam Research Corporation Ultrathin atomic layer deposition film accuracy thickness control
JP6484478B2 (ja) 2015-03-25 2019-03-13 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP5961297B1 (ja) 2015-03-26 2016-08-02 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
WO2016152276A1 (ja) 2015-03-26 2016-09-29 村田機械株式会社 物品の支持装置及び支持方法
JP6358143B2 (ja) 2015-03-26 2018-07-18 株式会社ダイフク 半導体容器保管設備
JP6458595B2 (ja) 2015-03-27 2019-01-30 東京エレクトロン株式会社 成膜装置及び成膜方法並びに記憶媒体
US11124876B2 (en) 2015-03-30 2021-09-21 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US9777025B2 (en) 2015-03-30 2017-10-03 L'Air Liquide, Société pour l'Etude et l'Exploitation des Procédés Georges Claude Si-containing film forming precursors and methods of using the same
US10246772B2 (en) 2015-04-01 2019-04-02 Applied Materials, Inc. Plasma enhanced chemical vapor deposition of films for improved vertical etch performance in 3D NAND memory devices
USD759193S1 (en) 2015-04-01 2016-06-14 Cummins Emission Solutions, Inc. Water deflector
US9502238B2 (en) 2015-04-03 2016-11-22 Lam Research Corporation Deposition of conformal films by atomic layer deposition and atomic layer etch
KR102376982B1 (ko) 2015-04-14 2022-03-21 삼성전자주식회사 세라믹을 이용하여 파티클 저감 효과를 가지는 원격 플라즈마 발생장치
USD801942S1 (en) 2015-04-16 2017-11-07 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US20160307904A1 (en) 2015-04-16 2016-10-20 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Niobium-containing film forming compositions and vapor deposition of niobium-containing films
KR20160124992A (ko) 2015-04-20 2016-10-31 삼성전자주식회사 기판 제조 장치, 및 그의 세라믹 박막 코팅 방법
US20160314964A1 (en) 2015-04-21 2016-10-27 Lam Research Corporation Gap fill using carbon-based films
USD797067S1 (en) 2015-04-21 2017-09-12 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US9865459B2 (en) 2015-04-22 2018-01-09 Applied Materials, Inc. Plasma treatment to improve adhesion between hardmask film and silicon oxide film
US9343297B1 (en) 2015-04-22 2016-05-17 Asm Ip Holding B.V. Method for forming multi-element thin film constituted by at least five elements by PEALD
US11384432B2 (en) 2015-04-22 2022-07-12 Applied Materials, Inc. Atomic layer deposition chamber with funnel-shaped gas dispersion channel and gas distribution plate
TWI615917B (zh) 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
US10190701B2 (en) 2015-05-07 2019-01-29 Applied Materials, Inc. Corrosion control for chamber components
US10471428B2 (en) 2015-05-11 2019-11-12 The University Of North Carolina At Chapel Hill Fluidic devices with nanoscale manifolds for molecular transport, related systems and methods of analysis
US10177024B2 (en) 2015-05-12 2019-01-08 Lam Research Corporation High temperature substrate pedestal module and components thereof
JP2016213475A (ja) 2015-05-13 2016-12-15 東京エレクトロン株式会社 シュリンク及び成長方法を使用する極端紫外線感度低下
JP1544542S (ko) 2015-05-14 2019-02-18
US10170320B2 (en) 2015-05-18 2019-01-01 Lam Research Corporation Feature fill with multi-stage nucleation inhibition
KR102085044B1 (ko) * 2015-05-22 2020-03-05 가부시키가이샤 히다치 하이테크놀로지즈 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
JP6806704B2 (ja) 2015-05-22 2021-01-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 方位角方向に調整可能なマルチゾーン静電チャック
JP1547057S (ko) 2015-05-28 2016-04-04
US9428833B1 (en) 2015-05-29 2016-08-30 Lam Research Corporation Method and apparatus for backside deposition reduction by control of wafer support to achieve edge seal
US9941111B2 (en) 2015-05-29 2018-04-10 Infineon Technologies Ag Method for processing a semiconductor layer, method for processing a silicon substrate, and method for processing a silicon layer
US9711350B2 (en) 2015-06-03 2017-07-18 Asm Ip Holding B.V. Methods for semiconductor passivation by nitridation
US9449843B1 (en) 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally
JP1545222S (ko) 2015-06-10 2016-03-07
US20160362813A1 (en) 2015-06-12 2016-12-15 Applied Materials, Inc. Injector for semiconductor epitaxy growth
US10053774B2 (en) 2015-06-12 2018-08-21 Asm Ip Holding B.V. Reactor system for sublimation of pre-clean byproducts and method thereof
US9646883B2 (en) 2015-06-12 2017-05-09 International Business Machines Corporation Chemoepitaxy etch trim using a self aligned hard mask for metal line to via
US9647071B2 (en) 2015-06-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. FINFET structures and methods of forming the same
CN106328702B (zh) 2015-06-15 2020-03-06 联华电子股份有限公司 填充半导体元件间隙的方法及其形成的半导体元件
US9711396B2 (en) 2015-06-16 2017-07-18 Asm Ip Holding B.V. Method for forming metal chalcogenide thin films on a semiconductor device
USD798248S1 (en) 2015-06-18 2017-09-26 Applied Materials, Inc. Target profile for a physical vapor deposition chamber target
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
WO2017004050A1 (en) 2015-06-29 2017-01-05 Applied Materials, Inc. Temperature controlled substrate processing
TWM512254U (zh) 2015-07-02 2015-11-11 Jjs Comm Co Ltd 用於同軸電纜轉接頭之絕緣墊片結構
US10600673B2 (en) 2015-07-07 2020-03-24 Asm Ip Holding B.V. Magnetic susceptor to baseplate seal
KR102417934B1 (ko) 2015-07-07 2022-07-07 에이에스엠 아이피 홀딩 비.브이. 박막 증착 장치
US10174437B2 (en) 2015-07-09 2019-01-08 Applied Materials, Inc. Wafer electroplating chuck assembly
US9899291B2 (en) 2015-07-13 2018-02-20 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
US10043661B2 (en) 2015-07-13 2018-08-07 Asm Ip Holding B.V. Method for protecting layer by forming hydrocarbon-based extremely thin film
JP6578243B2 (ja) 2015-07-17 2019-09-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ ガス供給ノズル、基板処理装置、半導体装置の製造方法およびプログラム
US20170025291A1 (en) 2015-07-22 2017-01-26 Taiwan Semiconductor Manufacturing Co., Ltd. Multi-chamber furnace for batch processing
US10745808B2 (en) 2015-07-24 2020-08-18 Versum Materials Us, Llc Methods for depositing Group 13 metal or metalloid nitride films
US10083836B2 (en) 2015-07-24 2018-09-25 Asm Ip Holding B.V. Formation of boron-doped titanium metal films with high work function
JP6529371B2 (ja) 2015-07-27 2019-06-12 東京エレクトロン株式会社 エッチング方法及びエッチング装置
US9793097B2 (en) 2015-07-27 2017-10-17 Lam Research Corporation Time varying segmented pressure control
FR3039531A1 (ko) 2015-07-28 2017-02-03 Nexdot
JP6502779B2 (ja) 2015-07-29 2019-04-17 東京エレクトロン株式会社 ガス供給系のバルブのリークを検査する方法
US10309011B2 (en) 2015-07-29 2019-06-04 Korea Research Institute Of Standards And Science Method for manufacturing two-dimensional transition metal dichalcogemide thin film
JP6560924B2 (ja) 2015-07-29 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法及びプログラム
US20170032992A1 (en) 2015-07-31 2017-02-02 Infineon Technologies Ag Substrate carrier, a method and a processing device
KR102420087B1 (ko) 2015-07-31 2022-07-12 삼성전자주식회사 반도체 소자의 제조 방법
JP6600074B2 (ja) 2015-07-31 2019-10-30 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 窒化ケイ素膜を堆積するための組成物及び方法
US20170040146A1 (en) 2015-08-03 2017-02-09 Lam Research Corporation Plasma etching device with plasma etch resistant coating
US10428421B2 (en) 2015-08-03 2019-10-01 Asm Ip Holding B.V. Selective deposition on metal or metallic surfaces relative to dielectric surfaces
US10087525B2 (en) 2015-08-04 2018-10-02 Asm Ip Holding B.V. Variable gap hard stop design
US10566185B2 (en) 2015-08-05 2020-02-18 Asm Ip Holding B.V. Selective deposition of aluminum and nitrogen containing material
JP1549880S (ko) 2015-08-06 2016-05-23
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US10950477B2 (en) 2015-08-07 2021-03-16 Applied Materials, Inc. Ceramic heater and esc with enhanced wafer edge performance
US10738381B2 (en) 2015-08-13 2020-08-11 Asm Ip Holding B.V. Thin film deposition apparatus
KR102417930B1 (ko) 2015-08-13 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 증착 장치 및 이를 포함하는 증착 시스템
US9647114B2 (en) 2015-08-14 2017-05-09 Asm Ip Holding B.V. Methods of forming highly p-type doped germanium tin films and structures and devices including the films
US20170051402A1 (en) 2015-08-17 2017-02-23 Asm Ip Holding B.V. Susceptor and substrate processing apparatus
US20170051405A1 (en) 2015-08-18 2017-02-23 Asm Ip Holding B.V. Method for forming sin or sicn film in trenches by peald
JP1550115S (ko) 2015-08-18 2016-05-23
JP1549882S (ko) 2015-08-18 2016-05-23
US9978610B2 (en) 2015-08-21 2018-05-22 Lam Research Corporation Pulsing RF power in etch process to enhance tungsten gapfill performance
US9449987B1 (en) 2015-08-21 2016-09-20 Sandisk Technologies Llc Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
US10410857B2 (en) 2015-08-24 2019-09-10 Asm Ip Holding B.V. Formation of SiN thin films
US9711345B2 (en) 2015-08-25 2017-07-18 Asm Ip Holding B.V. Method for forming aluminum nitride-based film by PEALD
US9523148B1 (en) 2015-08-25 2016-12-20 Asm Ip Holdings B.V. Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US9711360B2 (en) 2015-08-27 2017-07-18 Applied Materials, Inc. Methods to improve in-film particle performance of amorphous boron-carbon hardmask process in PECVD system
JP6123952B1 (ja) 2015-08-27 2017-05-10 住友大阪セメント株式会社 静電チャック装置
US10121671B2 (en) 2015-08-28 2018-11-06 Applied Materials, Inc. Methods of depositing metal films using metal oxyhalide precursors
KR102420015B1 (ko) 2015-08-28 2022-07-12 삼성전자주식회사 Cs-ald 장치의 샤워헤드
US9455177B1 (en) 2015-08-31 2016-09-27 Dow Global Technologies Llc Contact hole formation methods
US9673042B2 (en) 2015-09-01 2017-06-06 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of copper surfaces and deposition and removal of self-assembled monolayers
US11514096B2 (en) 2015-09-01 2022-11-29 Panjiva, Inc. Natural language processing for entity resolution
WO2017037927A1 (ja) 2015-09-03 2017-03-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置および記録媒体
JP1546345S (ko) 2015-09-04 2016-03-22
JP6448502B2 (ja) 2015-09-09 2019-01-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置及びプログラム
US11104990B2 (en) 2015-09-11 2021-08-31 Versum Materials Us, Llc Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films
US9601693B1 (en) 2015-09-24 2017-03-21 Lam Research Corporation Method for encapsulating a chalcogenide material
US10373809B2 (en) 2015-09-25 2019-08-06 Applied Materials Inc. Grooved backing plate for standing wave compensation
US9960072B2 (en) 2015-09-29 2018-05-01 Asm Ip Holding B.V. Variable adjustment for precise matching of multiple chamber cavity housings
JP2017069313A (ja) 2015-09-29 2017-04-06 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、ガス供給システムおよびプログラム
JP6163524B2 (ja) 2015-09-30 2017-07-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
KR102395997B1 (ko) 2015-09-30 2022-05-10 삼성전자주식회사 자기 저항 메모리 소자 및 그 제조 방법
US20180305247A1 (en) 2015-10-02 2018-10-25 Corning Incorporated Methods for treating a glass surface to reduce particle adhesion
US9853101B2 (en) 2015-10-07 2017-12-26 Taiwan Semiconductor Manufacturing Company, Ltd. Strained nanowire CMOS device and method of forming
US10695794B2 (en) 2015-10-09 2020-06-30 Asm Ip Holding B.V. Vapor phase deposition of organic films
US11171023B2 (en) 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
JP6805244B2 (ja) 2015-10-13 2020-12-23 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機スズオキシドヒドロキシドのパターン形成組成物、前駆体およびパターン形成
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
US9909214B2 (en) 2015-10-15 2018-03-06 Asm Ip Holding B.V. Method for depositing dielectric film in trenches by PEALD
TWI740848B (zh) 2015-10-16 2021-10-01 荷蘭商Ａｓｍ智慧財產控股公司 實施原子層沉積以得閘極介電質
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
JP6464990B2 (ja) 2015-10-21 2019-02-06 東京エレクトロン株式会社 縦型熱処理装置
KR102424720B1 (ko) 2015-10-22 2022-07-25 삼성전자주식회사 수직형 메모리 장치 및 이의 제조 방법
US10358721B2 (en) 2015-10-22 2019-07-23 Asm Ip Holding B.V. Semiconductor manufacturing system including deposition apparatus
CN108140555B (zh) 2015-10-22 2024-03-15 应用材料公司 沉积包含SiO及SiN的可流动薄膜的方法
US20180312966A1 (en) 2015-10-23 2018-11-01 Applied Materials, Inc. Methods For Spatial Metal Atomic Layer Deposition
CN105253917B (zh) 2015-10-28 2017-07-28 昆明理工大学 一种化学气相沉积金属铼用前驱体的制备方法
USD800782S1 (en) 2015-11-09 2017-10-24 Eaton Corporation Drive plate
US10322384B2 (en) 2015-11-09 2019-06-18 Asm Ip Holding B.V. Counter flow mixer for process chamber
US9455138B1 (en) 2015-11-10 2016-09-27 Asm Ip Holding B.V. Method for forming dielectric film in trenches by PEALD using H-containing gas
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
TWD177995S (zh) 2015-11-18 2016-09-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備之氣體供應板
US9996004B2 (en) 2015-11-20 2018-06-12 Lam Research Corporation EUV photopatterning of vapor-deposited metal oxide-containing hardmasks
WO2017091345A1 (en) 2015-11-25 2017-06-01 Applied Materials, Inc. New materials for tensile stress and low contact resistance and method of forming
CN108369919B (zh) 2015-11-27 2022-10-25 株式会社国际电气 衬底处理装置
US9905420B2 (en) 2015-12-01 2018-02-27 Asm Ip Holding B.V. Methods of forming silicon germanium tin films and structures and devices including the films
US20170167023A1 (en) 2015-12-09 2017-06-15 Lam Research Corporation Silicon or silicon carbide gas injector for substrate processing systems
JP6613864B2 (ja) 2015-12-14 2019-12-04 Ｔｄｋ株式会社 ミニエンバイロメント装置
US10332767B2 (en) 2015-12-17 2019-06-25 Asm Ip Holding B.V. Substrate transport device and substrate processing apparatus
KR102423818B1 (ko) 2015-12-18 2022-07-21 삼성전자주식회사 정전척 어셈블리 및 그를 포함하는 반도체 제조장치, 그리고 정전척 온도 측정방법
US20170178899A1 (en) 2015-12-18 2017-06-22 Lam Research Corporation Directional deposition on patterned structures
US11257929B2 (en) 2015-12-18 2022-02-22 Intel Corporation Stacked transistors
TWI716511B (zh) 2015-12-19 2021-01-21 美商應用材料股份有限公司 用於鎢原子層沉積製程作為成核層之正形非晶矽
US10087547B2 (en) 2015-12-21 2018-10-02 The Regents Of The University Of California Growth of single crystal III-V semiconductors on amorphous substrates
US9607837B1 (en) 2015-12-21 2017-03-28 Asm Ip Holding B.V. Method for forming silicon oxide cap layer for solid state diffusion process
AT518081B1 (de) 2015-12-22 2017-07-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
CH711990A2 (de) 2015-12-22 2017-06-30 Interglass Tech Ag Vakuumbeschichtungsanlage zum Beschichten von Linsen.
US9627221B1 (en) 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US9735024B2 (en) 2015-12-28 2017-08-15 Asm Ip Holding B.V. Method of atomic layer etching using functional group-containing fluorocarbon
US9633838B2 (en) 2015-12-28 2017-04-25 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Vapor deposition of silicon-containing films using penta-substituted disilanes
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
US20170191685A1 (en) 2015-12-30 2017-07-06 Lam Research Corporation Self-sustained in-situ thermal control apparatus
WO2017117221A1 (en) 2016-01-01 2017-07-06 Applied Materials, Inc. Non-metallic thermal cvd/ald gas injector and purge system
TWD178424S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的氣流控制板
TWD178425S (zh) 2016-01-08 2016-09-21 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的電極板
TWD178699S (zh) 2016-01-08 2016-10-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的氣體分散板
TWD178698S (zh) 2016-01-08 2016-10-01 ＡＳＭ知識產權私人控股有&#x9 用於半導體製造設備的反應器外壁
US9412648B1 (en) 2016-01-11 2016-08-09 Taiwan Semiconductor Manufacturing Company, Ltd. Via patterning using multiple photo multiple etch
JP6493518B2 (ja) 2016-01-19 2019-04-03 住友大阪セメント株式会社 静電チャック装置
DE102016100963A1 (de) 2016-01-21 2017-07-27 Knorr-Bremse Systeme für Schienenfahrzeuge GmbH Luftversorgungsanlage
US20170213960A1 (en) 2016-01-26 2017-07-27 Arm Ltd. Fabrication and operation of correlated electron material devices
KR20170090194A (ko) 2016-01-28 2017-08-07 삼성전자주식회사 복수 개의 가스 배출관 들 및 가스 센서들을 가진 반도체 소자 제조 설비
US10153351B2 (en) 2016-01-29 2018-12-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and a method for fabricating the same
US9496225B1 (en) 2016-02-08 2016-11-15 International Business Machines Corporation Recessed metal liner contact with copper fill
US10865477B2 (en) 2016-02-08 2020-12-15 Illinois Tool Works Inc. Method and system for the localized deposit of metal on a surface
US9570302B1 (en) 2016-02-10 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method of patterning a material layer
US10364497B2 (en) 2016-02-11 2019-07-30 Intermolecular, Inc. Vapor based site-isolated processing systems and methods
CA2920646A1 (en) 2016-02-12 2017-08-12 Seastar Chemicals Inc. Organometallic compound and method
JP6538582B2 (ja) 2016-02-15 2019-07-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
US10468251B2 (en) 2016-02-19 2019-11-05 Asm Ip Holding B.V. Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9754779B1 (en) 2016-02-19 2017-09-05 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
JP2019510877A (ja) 2016-02-19 2019-04-18 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ モリブデンカルボニル前駆体を使用したモリブデン薄膜の蒸着
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US9666528B1 (en) 2016-02-23 2017-05-30 International Business Machines Corporation BEOL vertical fuse formed over air gap
USD855089S1 (en) 2016-02-29 2019-07-30 Moldman Systems Llc Mixer assembly
US9748145B1 (en) 2016-02-29 2017-08-29 Globalfoundries Inc. Semiconductor devices with varying threshold voltage and fabrication methods thereof
JP6240695B2 (ja) 2016-03-02 2017-11-29 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US10018920B2 (en) 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
US10073342B2 (en) 2016-03-04 2018-09-11 Micron Technology, Inc. Method of forming patterns
WO2017155808A1 (en) 2016-03-07 2017-09-14 Sunedison Semiconductor Limited Semiconductor on insulator structure comprising a plasma nitride layer and method of manufacture thereof
US10501866B2 (en) 2016-03-09 2019-12-10 Asm Ip Holding B.V. Gas distribution apparatus for improved film uniformity in an epitaxial system
KR102301585B1 (ko) 2016-03-13 2021-09-10 어플라이드 머티어리얼스, 인코포레이티드 선택적 건식 에칭을 위한 방법들 및 장치
WO2017160647A1 (en) 2016-03-13 2017-09-21 Applied Materials, Inc. Selective deposition of silicon nitride films for spacer applications
KR20170107323A (ko) 2016-03-15 2017-09-25 연세대학교 산학협력단 전이금속 칼코겐 화합물 합금 및 그의 제조방법
US10134672B2 (en) 2016-03-15 2018-11-20 Toshiba Memory Corporation Semiconductor memory device having a stepped structure and contact wirings formed thereon
CN205448240U (zh) 2016-03-15 2016-08-10 核工业理化工程研究院华核新技术开发公司 一种高效型移动式自循环核级空气净化器
JP6690496B2 (ja) 2016-03-17 2020-04-28 東京エレクトロン株式会社 成膜方法及び成膜装置
KR102632725B1 (ko) 2016-03-17 2024-02-05 에이에스엠 아이피 홀딩 비.브이. 기판 지지 플레이트 및 이를 포함하는 박막 증착 장치 및 박막 증착 방법
KR101758892B1 (ko) 2016-03-18 2017-07-17 정예호 고효율 저소음용 미니 청소기
US10343920B2 (en) 2016-03-18 2019-07-09 Asm Ip Holding B.V. Aligned carbon nanotubes
US9837355B2 (en) 2016-03-22 2017-12-05 International Business Machines Corporation Method for maximizing air gap in back end of the line interconnect through via landing modification
JP6576277B2 (ja) 2016-03-23 2019-09-18 東京エレクトロン株式会社 窒化膜の形成方法
US9892913B2 (en) 2016-03-24 2018-02-13 Asm Ip Holding B.V. Radial and thickness control via biased multi-port injection settings
USD807494S1 (en) 2016-03-24 2018-01-09 Lg Electronics Inc. Cover for air purifier with humidifier
KR102329531B1 (ko) 2016-03-28 2021-11-23 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리 장치
JP6566904B2 (ja) 2016-03-29 2019-08-28 東京エレクトロン株式会社 基板処理装置
US9957192B2 (en) 2016-03-29 2018-05-01 Applied Materials, Inc. Low temperature fluoride glasses and glazes
US10573540B2 (en) 2016-03-30 2020-02-25 Shibaura Mechatronics Corporation Substrate processing apparatus and substrate processing method
WO2017171739A1 (en) 2016-03-30 2017-10-05 Intel Corporation Transistor gate-channel arrangements
JP6608753B2 (ja) 2016-03-31 2019-11-20 株式会社ノリタケカンパニーリミテド ＰｄＲｕ合金電極材料およびその製造方法
US20190112711A1 (en) 2016-04-01 2019-04-18 3M Innovative Properties Company Roll-To-Roll Atomic Layer Deposition Apparatus and Method
USD794753S1 (en) 2016-04-08 2017-08-15 Applied Materials, Inc. Showerhead for a semiconductor processing chamber
USD793526S1 (en) 2016-04-08 2017-08-01 Applied Materials, Inc. Showerhead for a semiconductor processing chamber
JP6095825B2 (ja) 2016-04-08 2017-03-15 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
US10049913B2 (en) 2016-04-12 2018-08-14 Tokyo Electron Limited Methods for SiO2 filling of fine recessed features and selective SiO2 deposition on catalytic surfaces
US10224238B2 (en) 2016-04-12 2019-03-05 Apple Inc. Electrical components having metal traces with protected sidewalls
US10388492B2 (en) 2016-04-14 2019-08-20 Fm Industries, Inc. Coated semiconductor processing members having chlorine and fluorine plasma erosion resistance and complex oxide coatings therefor
US10204782B2 (en) 2016-04-18 2019-02-12 Imec Vzw Combined anneal and selective deposition process
US10190213B2 (en) 2016-04-21 2019-01-29 Asm Ip Holding B.V. Deposition of metal borides
US10865475B2 (en) 2016-04-21 2020-12-15 Asm Ip Holding B.V. Deposition of metal borides and silicides
US10087522B2 (en) 2016-04-21 2018-10-02 Asm Ip Holding B.V. Deposition of metal borides
WO2017184223A1 (en) 2016-04-22 2017-10-26 Applied Materials, Inc. Substrate support pedestal having plasma confinement features
US10438860B2 (en) 2016-04-22 2019-10-08 Applied Materials, Inc. Dynamic wafer leveling/tilting/swiveling steps for use during a chemical vapor deposition process
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
KR101820237B1 (ko) 2016-04-29 2018-01-19 한양대학교 산학협력단 가압식 금속 단원자층 제조 방법, 금속 단원자층 구조체 및 가압식 금속 단원자층 제조 장치
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10032628B2 (en) 2016-05-02 2018-07-24 Asm Ip Holding B.V. Source/drain performance through conformal solid state doping
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10115586B2 (en) 2016-05-08 2018-10-30 Tokyo Electron Limited Method for depositing a planarization layer using polymerization chemical vapor deposition
KR102592471B1 (ko) 2016-05-17 2023-10-20 에이에스엠 아이피 홀딩 비.브이. 금속 배선 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
US9680268B1 (en) 2016-05-18 2017-06-13 Itt Manufacturing Enterprises Llc Genderless electrical connectors
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
USD849662S1 (en) 2016-05-21 2019-05-28 Worthington Industries, Inc. Cylinder support system
US9987747B2 (en) 2016-05-24 2018-06-05 Semes Co., Ltd. Stocker for receiving cassettes and method of teaching a stocker robot disposed therein
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
WO2017210140A1 (en) 2016-05-29 2017-12-07 Tokyo Electron Limited Method of selective silicon nitride etching
US10373820B2 (en) 2016-06-01 2019-08-06 Asm Ip Holding B.V. Deposition of organic films
KR102113453B1 (ko) 2016-06-03 2020-05-21 어플라이드 머티어리얼스, 인코포레이티드 기판 거리 모니터링
JP2017220011A (ja) 2016-06-07 2017-12-14 株式会社神戸製鋼所 積層膜、表示装置及び入力装置
WO2017212546A1 (ja) 2016-06-07 2017-12-14 株式会社日立国際電気 基板処理装置、炉口部および半導体装置の製造方法並びにプログラム
CN106011785B (zh) 2016-06-07 2018-10-16 上海纳米技术及应用国家工程研究中心有限公司 一种原子层沉积制备高均匀性Nb掺杂TiO2透明导电薄膜的方法
US10002958B2 (en) 2016-06-08 2018-06-19 The United States Of America, As Represented By The Secretary Of The Navy Diamond on III-nitride device
US10014212B2 (en) 2016-06-08 2018-07-03 Asm Ip Holding B.V. Selective deposition of metallic films
US10354873B2 (en) 2016-06-08 2019-07-16 Tokyo Electron Limited Organic mandrel protection process
US20170358445A1 (en) 2016-06-13 2017-12-14 Gvd Corporation Methods for plasma depositing polymers comprising cyclic siloxanes and related compositions and articles
JP6585551B2 (ja) 2016-06-15 2019-10-02 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
USD785766S1 (en) 2016-06-15 2017-05-02 Asm Ip Holding B.V. Shower plate
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20170372919A1 (en) 2016-06-25 2017-12-28 Applied Materials, Inc. Flowable Amorphous Silicon Films For Gapfill Applications
US10388509B2 (en) 2016-06-28 2019-08-20 Asm Ip Holding B.V. Formation of epitaxial layers via dislocation filtering
US9824893B1 (en) 2016-06-28 2017-11-21 Lam Research Corporation Tin oxide thin film spacers in semiconductor device manufacturing
US10217863B2 (en) 2016-06-28 2019-02-26 International Business Machines Corporation Fabrication of a vertical fin field effect transistor with an asymmetric gate structure
US20160314962A1 (en) 2016-06-30 2016-10-27 American Air Liquide, Inc. Cyclic organoaminosilane precursors for forming silicon-containing films and methods of using the same
CN110265322B (zh) 2016-06-30 2020-10-30 株式会社国际电气 衬底处理装置、半导体器件的制造方法及记录介质
US20160315168A1 (en) 2016-06-30 2016-10-27 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Process for forming gate insulators for tft structures
US10062563B2 (en) 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
KR102165711B1 (ko) 2016-07-05 2020-10-14 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 가스 노즐 및 반도체 장치의 제조 방법
USD829306S1 (en) 2016-07-06 2018-09-25 Asm Ip Holding B.V. Shower plate
US9812319B1 (en) 2016-07-06 2017-11-07 Asm Ip Holding B.V. Method for forming film filled in trench without seam or void
KR102576702B1 (ko) 2016-07-06 2023-09-08 삼성전자주식회사 증착 공정 모니터링 시스템, 및 그 시스템을 이용한 증착 공정 제어방법과 반도체 소자 제조방법
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
EP3267187B1 (en) 2016-07-08 2020-04-15 Volvo Car Corporation Silicon carbide based field effect gas sensor for high temperature applications
USD793352S1 (en) 2016-07-11 2017-08-01 Asm Ip Holding B.V. Getter plate
US9793135B1 (en) 2016-07-14 2017-10-17 ASM IP Holding B.V Method of cyclic dry etching using etchant film
JP6793243B2 (ja) 2016-07-14 2020-12-02 インテグリス・インコーポレーテッド ＭｏＯＣｌ４を使用することによるＣＶＤ Ｍｏ堆積
CN109477214A (zh) 2016-07-19 2019-03-15 应用材料公司 可流动含硅膜的沉积
US10714385B2 (en) 2016-07-19 2020-07-14 Asm Ip Holding B.V. Selective deposition of tungsten
US9799736B1 (en) 2016-07-20 2017-10-24 International Business Machines Corporation High acceptor level doping in silicon germanium
JP6616258B2 (ja) 2016-07-26 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、蓋部カバーおよび半導体装置の製造方法
US20180033614A1 (en) 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10381226B2 (en) 2016-07-27 2019-08-13 Asm Ip Holding B.V. Method of processing substrate
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US10395919B2 (en) 2016-07-28 2019-08-27 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10177025B2 (en) 2016-07-28 2019-01-08 Asm Ip Holding B.V. Method and apparatus for filling a gap
EP3282037B1 (en) 2016-08-09 2022-12-07 IMEC vzw Formation of a transition metal nitride
US10347547B2 (en) 2016-08-09 2019-07-09 Lam Research Corporation Suppressing interfacial reactions by varying the wafer temperature throughout deposition
US9865456B1 (en) 2016-08-12 2018-01-09 Micron Technology, Inc. Methods of forming silicon nitride by atomic layer deposition and methods of forming semiconductor structures
US10573522B2 (en) 2016-08-16 2020-02-25 Lam Research Corporation Method for preventing line bending during metal fill process
KR102429608B1 (ko) 2016-08-17 2022-08-04 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102613349B1 (ko) 2016-08-25 2023-12-14 에이에스엠 아이피 홀딩 비.브이. 배기 장치 및 이를 이용한 기판 가공 장치와 박막 제조 방법
TW201825623A (zh) 2016-08-30 2018-07-16 美商康寧公司 用於片材接合的矽氧烷電漿聚合物
CA2974387A1 (en) 2016-08-30 2018-02-28 Rolls-Royce Corporation Swirled flow chemical vapor deposition
US10468244B2 (en) 2016-08-30 2019-11-05 Versum Materials Us, Llc Precursors and flowable CVD methods for making low-K films to fill surface features
US10229851B2 (en) 2016-08-30 2019-03-12 International Business Machines Corporation Self-forming barrier for use in air gap formation
US10037884B2 (en) 2016-08-31 2018-07-31 Lam Research Corporation Selective atomic layer deposition for gapfill using sacrificial underlayer
US10273575B2 (en) 2016-08-31 2019-04-30 Kennametal Inc. Composite refractory coatings and applications thereof
US10090316B2 (en) 2016-09-01 2018-10-02 Asm Ip Holding B.V. 3D stacked multilayer semiconductor memory using doped select transistor channel
US10269714B2 (en) 2016-09-06 2019-04-23 International Business Machines Corporation Low resistance contacts including intermetallic alloy of nickel, platinum, titanium, aluminum and type IV semiconductor elements
US9865455B1 (en) 2016-09-07 2018-01-09 Lam Research Corporation Nitride film formed by plasma-enhanced and thermal atomic layer deposition process
AU201711335S (en) 2016-09-08 2017-03-29 Battlemax Pty Ltd Suction Cover
JP6710130B2 (ja) 2016-09-13 2020-06-17 東京エレクトロン株式会社 基板処理装置
JP6456893B2 (ja) 2016-09-26 2019-01-23 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、記録媒体および基板処理装置
JP6710134B2 (ja) 2016-09-27 2020-06-17 東京エレクトロン株式会社 ガス導入機構及び処理装置
JP6270952B1 (ja) 2016-09-28 2018-01-31 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体。
KR102600998B1 (ko) 2016-09-28 2023-11-13 삼성전자주식회사 반도체 장치
JP6550029B2 (ja) 2016-09-28 2019-07-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、ノズル基部および半導体装置の製造方法
US9847221B1 (en) 2016-09-29 2017-12-19 Lam Research Corporation Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
US10876205B2 (en) 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US9997606B2 (en) 2016-09-30 2018-06-12 International Business Machines Corporation Fully depleted SOI device for reducing parasitic back gate capacitance
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
FR3057102A1 (fr) 2016-10-05 2018-04-06 Stmicroelectronics Sa Procede de depot par epitaxie en phase gazeuse
US9824884B1 (en) 2016-10-06 2017-11-21 Lam Research Corporation Method for depositing metals free ald silicon nitride films using halide-based precursors
US9842835B1 (en) 2016-10-10 2017-12-12 International Business Machines Corporation High density nanosheet diodes
US10573549B2 (en) 2016-12-01 2020-02-25 Lam Research Corporation Pad raising mechanism in wafer positioning pedestal for semiconductor processing
TWI721216B (zh) 2016-10-13 2021-03-11 美商應用材料股份有限公司 用於電漿處理裝置中的腔室部件、包含其之裝置及製造其之方法
US10410943B2 (en) 2016-10-13 2019-09-10 Asm Ip Holding B.V. Method for passivating a surface of a semiconductor and related systems
US10643826B2 (en) 2016-10-26 2020-05-05 Asm Ip Holdings B.V. Methods for thermally calibrating reaction chambers
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US20170044664A1 (en) 2016-10-28 2017-02-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US10643904B2 (en) 2016-11-01 2020-05-05 Asm Ip Holdings B.V. Methods for forming a semiconductor device and related semiconductor device structures
CN206145834U (zh) 2016-11-01 2017-05-03 深圳信息职业技术学院 一种可移动式空气净化装置
US10435790B2 (en) 2016-11-01 2019-10-08 Asm Ip Holding B.V. Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap
US10229833B2 (en) 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10134757B2 (en) 2016-11-07 2018-11-20 Asm Ip Holding B.V. Method of processing a substrate and a device manufactured by using the method
KR101840378B1 (ko) 2016-11-09 2018-03-21 한국화학연구원 올레핀 복분해 반응용 촉매 및 이의 제조방법
US10134579B2 (en) 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
JP6737139B2 (ja) 2016-11-14 2020-08-05 東京エレクトロン株式会社 ガスインジェクタ、及び縦型熱処理装置
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR102147174B1 (ko) 2016-11-18 2020-08-28 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 반응관 구조 및 반도체 장치의 제조 방법
JP6804270B2 (ja) 2016-11-21 2020-12-23 東京エレクトロン株式会社 基板処理装置、および基板処理方法
US20180148832A1 (en) 2016-11-25 2018-05-31 Applied Materials, Inc. Methods for depositing flowable carbon films using hot wire chemical vapor deposition
US10340135B2 (en) 2016-11-28 2019-07-02 Asm Ip Holding B.V. Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US9991277B1 (en) 2016-11-28 2018-06-05 Sandisk Technologies Llc Three-dimensional memory device with discrete self-aligned charge storage elements and method of making thereof
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10619242B2 (en) 2016-12-02 2020-04-14 Asm Ip Holding B.V. Atomic layer deposition of rhenium containing thin films
US11761084B2 (en) 2016-12-02 2023-09-19 Asm Ip Holding B.V. Substrate processing apparatus and method of processing substrate
JP6824717B2 (ja) 2016-12-09 2021-02-03 東京エレクトロン株式会社 ＳｉＣ膜の成膜方法
US10192734B2 (en) 2016-12-11 2019-01-29 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploration des Procédés Georges Claude Short inorganic trisilylamine-based polysilazanes for thin film deposition
US20190273133A1 (en) 2016-12-14 2019-09-05 Intel Corporation Transistor source/drain amorphous interlayer arrangements
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10604841B2 (en) 2016-12-14 2020-03-31 Lam Research Corporation Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition
US10591078B2 (en) 2016-12-15 2020-03-17 The Boeing Company Fluid flow control device
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US9916980B1 (en) 2016-12-15 2018-03-13 Asm Ip Holding B.V. Method of forming a structure on a substrate
KR102403102B1 (ko) 2016-12-15 2022-05-26 에이에스엠 아이피 홀딩 비.브이. 반도체 처리 장치
CN108227412A (zh) 2016-12-15 2018-06-29 Imec 非营利协会 光刻掩模层
USD834686S1 (en) 2016-12-15 2018-11-27 Asm Ip Holding B.V. Shower plate
US10801106B2 (en) 2016-12-15 2020-10-13 Asm Ip Holding B.V. Shower plate structure for exhausting deposition inhibiting gas
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US9960033B1 (en) 2016-12-16 2018-05-01 Asm Ip Holding B.V. Method of depositing and etching Si-containing film
KR20180070971A (ko) 2016-12-19 2018-06-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20180174801A1 (en) 2016-12-21 2018-06-21 Ulvac Technologies, Inc. Apparatuses and methods for surface treatment
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
JP6862821B2 (ja) 2016-12-26 2021-04-21 東京エレクトロン株式会社 成膜装置、成膜方法及び断熱部材
US10867788B2 (en) 2016-12-28 2020-12-15 Asm Ip Holding B.V. Method of forming a structure on a substrate
US20180187303A1 (en) 2016-12-30 2018-07-05 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Lanthanide precursors and deposition of lanthanide-containing films using the same
US10049426B2 (en) 2017-01-03 2018-08-14 Qualcomm Incorporated Draw call visibility stream
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
TWI760421B (zh) 2017-01-18 2022-04-11 日商東京威力科創股份有限公司 使用六氟化硫之優先氮化矽蝕刻方法
US10186400B2 (en) 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
JP1584906S (ko) 2017-01-31 2017-08-28
JP1584241S (ko) 2017-01-31 2017-08-21
US10822458B2 (en) 2017-02-08 2020-11-03 Versum Materials Us, Llc Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films
US10655221B2 (en) 2017-02-09 2020-05-19 Asm Ip Holding B.V. Method for depositing oxide film by thermal ALD and PEALD
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
JP2018133471A (ja) 2017-02-16 2018-08-23 漢民科技股▲分▼有限公司 気相成膜装置
CN106895521A (zh) 2017-03-01 2017-06-27 大连葆光节能空调设备厂 恒温、恒湿、恒净静室内空气系统
CA176724S (en) 2017-03-02 2018-07-03 Ebm Papst Landshut Gmbh Engine cap
JP2018148143A (ja) 2017-03-08 2018-09-20 株式会社東芝 シャワープレート、処理装置、及び吐出方法
US11081337B2 (en) 2017-03-15 2021-08-03 Versum Materials U.S., LLC Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials
JP6949515B2 (ja) 2017-03-15 2021-10-13 ソニーセミコンダクタソリューションズ株式会社 カメラモジュール及びその製造方法、並びに、電子機器
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US9911595B1 (en) 2017-03-17 2018-03-06 Lam Research Corporation Selective growth of silicon nitride
JP6703496B2 (ja) 2017-03-27 2020-06-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法およびプログラム
JP6807792B2 (ja) 2017-03-27 2021-01-06 東京エレクトロン株式会社 プラズマ生成方法及びこれを用いたプラズマ処理方法、並びにプラズマ処理装置
US11942526B2 (en) 2017-03-28 2024-03-26 Intel Corporation Integrated circuit contact structures
US10629415B2 (en) 2017-03-28 2020-04-21 Asm Ip Holding B.V. Substrate processing apparatus and method for processing substrate
US10283353B2 (en) 2017-03-29 2019-05-07 Asm Ip Holding B.V. Method of reforming insulating film deposited on substrate with recess pattern
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10460932B2 (en) 2017-03-31 2019-10-29 Asm Ip Holding B.V. Semiconductor device with amorphous silicon filled gaps and methods for forming
US10103040B1 (en) 2017-03-31 2018-10-16 Asm Ip Holding B.V. Apparatus and method for manufacturing a semiconductor device
USD876504S1 (en) 2017-04-03 2020-02-25 Asm Ip Holding B.V. Exhaust flow control ring for semiconductor deposition apparatus
USD830981S1 (en) 2017-04-07 2018-10-16 Asm Ip Holding B.V. Susceptor for semiconductor substrate processing apparatus
KR102572271B1 (ko) 2017-04-10 2023-08-28 램 리써치 코포레이션 몰리브덴을 함유하는 저 저항률 막들
US9984869B1 (en) 2017-04-17 2018-05-29 Asm Ip Holding B.V. Method of plasma-assisted cyclic deposition using ramp-down flow of reactant gas
US10017856B1 (en) 2017-04-17 2018-07-10 Applied Materials, Inc. Flowable gapfill using solvents
US10242879B2 (en) 2017-04-20 2019-03-26 Lam Research Corporation Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
KR102457289B1 (ko) 2017-04-25 2022-10-21 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10319582B2 (en) 2017-04-27 2019-06-11 Lam Research Corporation Methods and apparatus for depositing silicon oxide on metal layers
US10157785B2 (en) 2017-05-01 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11501965B2 (en) 2017-05-05 2022-11-15 Asm Ip Holding B.V. Plasma enhanced deposition processes for controlled formation of metal oxide thin films
US10892156B2 (en) 2017-05-08 2021-01-12 Asm Ip Holding B.V. Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10446393B2 (en) 2017-05-08 2019-10-15 Asm Ip Holding B.V. Methods for forming silicon-containing epitaxial layers and related semiconductor device structures
US10563303B2 (en) 2017-05-10 2020-02-18 Applied Materials, Inc. Metal oxy-flouride films based on oxidation of metal flourides
US20180331117A1 (en) 2017-05-12 2018-11-15 Sandisk Technologies Llc Multilevel memory stack structure with tapered inter-tier joint region and methods of making thereof
US20180325414A1 (en) 2017-05-12 2018-11-15 Tech4Imaging Llc Electro-magneto volume tomography system and methodology for non-invasive volume tomography
KR20200007823A (ko) 2017-05-16 2020-01-22 에이에스엠 아이피 홀딩 비.브이. 유전체 상에 옥사이드의 선택적 peald
US10153195B1 (en) 2017-05-18 2018-12-11 Micron Technology, Inc. Semiconductor constructions comprising dielectric material
US10763139B2 (en) 2017-05-23 2020-09-01 Tokyo Electron Limited Vacuum transfer module and substrate processing apparatus
KR102417931B1 (ko) 2017-05-30 2022-07-06 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치 및 이를 포함하는 기판 처리 장치
US10504742B2 (en) 2017-05-31 2019-12-10 Asm Ip Holding B.V. Method of atomic layer etching using hydrogen plasma
US10886123B2 (en) 2017-06-02 2021-01-05 Asm Ip Holding B.V. Methods for forming low temperature semiconductor layers and related semiconductor device structures
JP7235683B2 (ja) 2017-06-08 2023-03-08 アプライド マテリアルズ インコーポレイテッド ハードマスク及びその他のパターニング応用のための高密度低温炭素膜
US10246777B2 (en) 2017-06-12 2019-04-02 Asm Ip Holding B.V. Heater block having continuous concavity
KR102474876B1 (ko) 2017-06-15 2022-12-07 삼성전자주식회사 텅스텐 전구체 및 이를 이용한 텅스텐 함유막의 형성 방법
US20180363139A1 (en) 2017-06-20 2018-12-20 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
CN109112500B (zh) 2017-06-22 2022-01-28 肯纳金属公司 Cvd复合材料耐火涂层及其应用
KR20200022009A (ko) 2017-06-23 2020-03-02 메르크 파텐트 게엠베하 선택적 필름 성장을 위한 원자층 증착 방법
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
WO2019005527A1 (en) 2017-06-29 2019-01-03 Commscope Technologies Llc INTERNAL CONTACT FOR COAXIAL CABLE
US10685834B2 (en) 2017-07-05 2020-06-16 Asm Ip Holdings B.V. Methods for forming a silicon germanium tin layer and related semiconductor device structures
TWI794238B (zh) 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
TWM553518U (zh) 2017-07-20 2017-12-21 Green Wind Technology Co Ltd 馬達絕緣結構
US10312055B2 (en) 2017-07-26 2019-06-04 Asm Ip Holding B.V. Method of depositing film by PEALD using negative bias
US10605530B2 (en) 2017-07-26 2020-03-31 Asm Ip Holding B.V. Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
USD859136S1 (en) 2017-07-31 2019-09-10 Ge Healthcare Bio-Sciences Corp. Tubing clamp
USD867867S1 (en) 2017-07-31 2019-11-26 Ge Healthcare Bio-Sciences Corp. Tubing clamp
JP6925196B2 (ja) 2017-07-31 2021-08-25 東京エレクトロン株式会社 処理装置及び処理方法
KR102481410B1 (ko) 2017-07-31 2022-12-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10361366B2 (en) 2017-08-03 2019-07-23 Tokyo Electron Limited Resistive random accress memory containing a conformal titanium aluminum carbide film and method of making
TWI815813B (zh) 2017-08-04 2023-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於分配反應腔內氣體的噴頭總成
WO2019028136A1 (en) * 2017-08-04 2019-02-07 Lam Research Corporation SELECTIVE DEPOSITION OF SILICON NITRIDE ON HORIZONTAL SURFACES
US11358113B2 (en) 2017-08-08 2022-06-14 H Quest Vanguard, Inc. Non-thermal micro-plasma conversion of hydrocarbons
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
TWI778102B (zh) 2017-08-09 2022-09-21 荷蘭商Ａｓｍ智慧財產控股公司 用於儲存基板用之卡匣的儲存設備及備有其之處理設備
US10249524B2 (en) 2017-08-09 2019-04-02 Asm Ip Holding B.V. Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10763108B2 (en) 2017-08-18 2020-09-01 Lam Research Corporation Geometrically selective deposition of a dielectric film
US10236177B1 (en) 2017-08-22 2019-03-19 ASM IP Holding B.V.. Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en) 2017-08-24 2020-10-27 Asm Ip Holding B.V. Heater electrical connector and adapter
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US20190067003A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film on a dielectric surface of a substrate and related semiconductor device structures
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US20190067014A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor device structures
US20190067095A1 (en) 2017-08-30 2019-02-28 Asm Ip Holding B.V. Layer forming method
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10622236B2 (en) 2017-08-30 2020-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus and method for handling wafer carrier doors
US10106892B1 (en) 2017-08-31 2018-10-23 Globalfoundries Inc. Thermal oxide equivalent low temperature ALD oxide for dual purpose gate oxide and method for producing the same
KR102401446B1 (ko) 2017-08-31 2022-05-24 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20190078206A1 (en) 2017-09-08 2019-03-14 Applied Materials, Inc. Fluorinated rare earth oxide ald coating for chamber productivity enhancement
US10269559B2 (en) 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US11851756B2 (en) 2017-09-14 2023-12-26 Versum Materials Us, Llc Methods for depositing silicon-containing films
CN107675144A (zh) 2017-09-15 2018-02-09 武汉华星光电技术有限公司 等离子体增强化学气相沉积装置
US10607895B2 (en) 2017-09-18 2020-03-31 Asm Ip Holdings B.V. Method for forming a semiconductor device structure comprising a gate fill metal
KR102074346B1 (ko) 2017-09-19 2020-02-06 서울과학기술대학교 산학협력단 리모트 플라즈마를 이용한 원자층 증착 시스템
KR102630301B1 (ko) 2017-09-21 2024-01-29 에이에스엠 아이피 홀딩 비.브이. 침투성 재료의 순차 침투 합성 방법 처리 및 이를 이용하여 형성된 구조물 및 장치
EP3460177B1 (en) 2017-09-21 2021-11-10 AccessESP UK Limited Stress control cones for downhole electrical power system tubing encapsulated power cables
US10844484B2 (en) 2017-09-22 2020-11-24 Asm Ip Holding B.V. Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10468501B2 (en) 2017-09-29 2019-11-05 Taiwan Semiconductor Manufacturing Company, Ltd. Gap-filling germanium through selective bottom-up growth
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10319588B2 (en) 2017-10-10 2019-06-11 Asm Ip Holding B.V. Method for depositing a metal chalcogenide on a substrate by cyclical deposition
KR20190042977A (ko) 2017-10-17 2019-04-25 삼성전자주식회사 반도체 장치의 제조 방법
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11948810B2 (en) 2017-11-15 2024-04-02 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus for processing substrates or wafers
US10468530B2 (en) 2017-11-15 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with source/drain multi-layer structure and method for forming the same
US10910262B2 (en) 2017-11-16 2021-02-02 Asm Ip Holding B.V. Method of selectively depositing a capping layer structure on a semiconductor device structure
KR102443047B1 (ko) 2017-11-16 2022-09-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 방법 및 그에 의해 제조된 장치
CN111356785A (zh) 2017-11-19 2020-06-30 应用材料公司 用于金属氧化物在金属表面上的ald的方法
WO2019099997A1 (en) 2017-11-20 2019-05-23 Lam Research Corporation Self-limiting growth
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
CN111316417B (zh) 2017-11-27 2023-12-22 阿斯莫Ip控股公司 与批式炉偕同使用的用于储存晶圆匣的储存装置
US10727059B2 (en) 2017-12-01 2020-07-28 Applied Materials, Inc. Highly etch selective amorphous carbon film
KR20190065962A (ko) 2017-12-04 2019-06-12 에이에스엠 아이피 홀딩 비.브이. 유전체와 금속 표면 상에 SiOC의 균일한 증착
US10229985B1 (en) 2017-12-04 2019-03-12 International Business Machines Corporation Vertical field-effect transistor with uniform bottom spacer
US10290508B1 (en) 2017-12-05 2019-05-14 Asm Ip Holding B.V. Method for forming vertical spacers for spacer-defined patterning
US11037780B2 (en) 2017-12-12 2021-06-15 Asm Ip Holding B.V. Method for manufacturing semiconductor device with helium-containing gas
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US20190189447A1 (en) 2017-12-19 2019-06-20 Lam Research Corporation Method for forming square spacers
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
JP7149068B2 (ja) 2017-12-21 2022-10-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US10283565B1 (en) 2017-12-21 2019-05-07 International Business Machines Corporation Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
US10415899B2 (en) 2017-12-28 2019-09-17 Asm Ip Holding B.V. Cooling system, substrate processing system and flow rate adjusting method for cooling medium
US10204788B1 (en) 2018-01-01 2019-02-12 United Microelectronics Corp. Method of forming high dielectric constant dielectric layer by atomic layer deposition
US11149350B2 (en) 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TW202325889A (zh) 2018-01-19 2023-07-01 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
WO2019142055A2 (en) 2018-01-19 2019-07-25 Asm Ip Holding B.V. Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en) 2018-01-24 2020-12-01 Asm Ip Holdings B.V. Metal clamp
CN108389798B (zh) 2018-01-24 2021-02-02 信利（惠州）智能显示有限公司 刻蚀方法、低温多晶硅薄膜晶体管及amoled面板
US10332747B1 (en) 2018-01-24 2019-06-25 Globalfoundries Inc. Selective titanium nitride deposition using oxides of lanthanum masks
US11018047B2 (en) 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
US20190237325A1 (en) 2018-01-26 2019-08-01 Applied Materials, Inc. Carbon film gapfill for patterning application
WO2019147462A1 (en) 2018-01-26 2019-08-01 Applied Materials, Inc. Treatment methods for silicon nitride thin films
US10332963B1 (en) 2018-01-29 2019-06-25 Globalfoundries Inc. Uniformity tuning of variable-height features formed in trenches
US11098069B2 (en) 2018-01-30 2021-08-24 Versum Materials Us, Llc Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films
USD880437S1 (en) 2018-02-01 2020-04-07 Asm Ip Holding B.V. Gas supply plate for semiconductor manufacturing apparatus
US10535516B2 (en) 2018-02-01 2020-01-14 Asm Ip Holdings B.V. Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US20190249303A1 (en) 2018-02-09 2019-08-15 Asm Ip Holding B.V. Chemical precursors and methods for depositing a silicon oxide film on a substrate utilizing chemical precursors
EP3737779A1 (en) 2018-02-14 2020-11-18 ASM IP Holding B.V. A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en) 2018-02-15 2020-08-04 Asm Ip Holding B.V. Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en) 2018-02-20 2020-05-19 Asm Ip Holding B.V. Method of spacer-defined direct patterning in semiconductor fabrication
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US11087961B2 (en) 2018-03-02 2021-08-10 Lam Research Corporation Quartz component with protective coating
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US10510536B2 (en) 2018-03-29 2019-12-17 Asm Ip Holding B.V. Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102501472B1 (ko) 2018-03-30 2023-02-20 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
KR102600229B1 (ko) 2018-04-09 2023-11-10 에이에스엠 아이피 홀딩 비.브이. 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법
JP6519897B2 (ja) 2018-04-10 2019-05-29 シンフォニアテクノロジー株式会社 パージノズルユニット、ロードポート
US10756186B2 (en) 2018-04-12 2020-08-25 Sandisk Technologies Llc Three-dimensional memory device including germanium-containing vertical channels and method of making the same
US11462387B2 (en) 2018-04-17 2022-10-04 Asm Ip Holding B.V. Substrate processing apparatus and substrate processing method
US10782613B2 (en) 2018-04-19 2020-09-22 International Business Machines Corporation Polymerizable self-assembled monolayers for use in atomic layer deposition
US10580645B2 (en) 2018-04-30 2020-03-03 Asm Ip Holding B.V. Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
US20190330740A1 (en) 2018-04-30 2019-10-31 Asm Ip Holding B.V. Substrate processing apparatus and method
JP2021523292A (ja) 2018-05-03 2021-09-02 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ ３ｄ ｎａｎｄ構造内にタングステンおよび他の金属を堆積させる方法
US11639547B2 (en) 2018-05-03 2023-05-02 Applied Materials, Inc. Halogen resistant coatings and methods of making and using thereof
TWI811348B (zh) 2018-05-08 2023-08-11 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
US20190346300A1 (en) 2018-05-08 2019-11-14 Asm Ip Holding B.V. Thin film forming method
US20190348261A1 (en) 2018-05-09 2019-11-14 Asm Ip Holding B.V. Apparatus for use with hydrogen radicals and method of using same
TW202349473A (zh) 2018-05-11 2023-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於基板上形成摻雜金屬碳化物薄膜之方法及相關半導體元件結構
CN110473819B (zh) 2018-05-11 2020-12-08 北京北方华创微电子装备有限公司 一种开门装置、传输腔室和半导体处理设备
KR20200144580A (ko) 2018-05-11 2020-12-29 램 리써치 코포레이션 Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들
AT520629B1 (de) 2018-05-22 2019-06-15 Sico Tech Gmbh Injektor aus Silizium für die Halbleiterindustrie
US10665505B2 (en) 2018-05-22 2020-05-26 International Business Machines Corporation Self-aligned gate contact isolation
WO2019222963A1 (en) 2018-05-24 2019-11-28 Yangtze Memory Technologies Co., Ltd. Methods for repairing substrate lattice and selective epitaxy processing
US20190362989A1 (en) 2018-05-25 2019-11-28 Applied Materials, Inc. Substrate manufacturing apparatus and methods with factory interface chamber heating
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US20190368040A1 (en) 2018-06-01 2019-12-05 Asm Ip Holding B.V. Infiltration apparatus and methods of infiltrating an infiltrateable material
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
US11270899B2 (en) 2018-06-04 2022-03-08 Asm Ip Holding B.V. Wafer handling chamber with moisture reduction
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
TWI820667B (zh) 2018-06-19 2023-11-01 美商應用材料股份有限公司 間隙填充物沉積方法及類金剛石之碳的間隙填充物材料
US10741641B2 (en) 2018-06-20 2020-08-11 International Business Machines Corporation Dielectric isolation and SiGe channel formation for integration in CMOS nanosheet channel devices
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
US10483154B1 (en) 2018-06-22 2019-11-19 Globalfoundries Inc. Front-end-of-line device structure and method of forming such a front-end-of-line device structure
JP2021529254A (ja) 2018-06-27 2021-10-28 エーエスエム・アイピー・ホールディング・ベー・フェー 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法
US11499222B2 (en) 2018-06-27 2022-11-15 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
JP7264894B2 (ja) 2018-06-29 2023-04-25 株式会社半導体エネルギー研究所 半導体装置
KR20200002519A (ko) 2018-06-29 2020-01-08 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법 및 반도체 장치의 제조 방법
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en) 2018-07-16 2020-09-08 Asm Ip Holding B.V. Diaphragm valves, valve components, and methods for forming valve components
WO2020023790A1 (en) 2018-07-26 2020-01-30 Lam Research Corporation Deposition of pure metal films
WO2020028028A1 (en) 2018-07-30 2020-02-06 Applied Materials, Inc. Method of selective silicon germanium epitaxy at low temperatures
CN109000352A (zh) 2018-08-03 2018-12-14 珠海格力电器股份有限公司 风道模块、设有其的风道结构及空调
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US10883175B2 (en) 2018-08-09 2021-01-05 Asm Ip Holding B.V. Vertical furnace for processing substrates and a liner for use therein
KR20200019308A (ko) 2018-08-13 2020-02-24 삼성디스플레이 주식회사 유기 발광 표시 장치
CN108910843A (zh) 2018-08-13 2018-11-30 中国工程物理研究院化工材料研究所 一种推进剂燃料的制备方法
US20200058469A1 (en) 2018-08-14 2020-02-20 Tokyo Electron Limited Systems and methods of control for plasma processing
US10829852B2 (en) 2018-08-16 2020-11-10 Asm Ip Holding B.V. Gas distribution device for a wafer processing apparatus
US10510871B1 (en) 2018-08-16 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
TWI827645B (zh) 2018-08-23 2024-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理設備及方法
JP6896682B2 (ja) 2018-09-04 2021-06-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置および半導体装置の製造方法
KR20200030162A (ko) 2018-09-11 2020-03-20 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11282938B2 (en) 2018-09-28 2022-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Capping layers in metal gates of transistors
US11501999B2 (en) 2018-09-28 2022-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. Cobalt fill for gate structures
CN110970344A (zh) 2018-10-01 2020-04-07 Asm Ip控股有限公司 衬底保持设备、包含所述设备的系统及其使用方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US20200109484A1 (en) 2018-10-03 2020-04-09 Asm Ip Holding B.V. Susceptor and susceptor coating method
US20200111669A1 (en) 2018-10-04 2020-04-09 Asm Ip Holding B.V. Method for depositing oxide film by peald using nitrogen
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US10825828B2 (en) 2018-10-11 2020-11-03 Micron Technology, Inc. Semiconductor devices and systems with channel openings or pillars extending through a tier stack, and methods of formation
US10847365B2 (en) 2018-10-11 2020-11-24 Asm Ip Holding B.V. Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en) 2018-10-16 2020-10-20 Asm Ip Holding B.V. Method for etching a carbon-containing feature
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
USD864134S1 (en) 2018-10-24 2019-10-22 Asm Ip Holding B.V. Susceptor
US20200131634A1 (en) 2018-10-26 2020-04-30 Asm Ip Holding B.V. High temperature coatings for a preclean and etch apparatus and related methods
US11081584B2 (en) 2018-10-30 2021-08-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing semiconductor devices using a capping layer in forming gate electrode and semiconductor devices
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
KR20200051105A (ko) 2018-11-02 2020-05-13 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 기판 처리 장치
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
WO2020102353A1 (en) 2018-11-13 2020-05-22 Tokyo Electron Limited Method for forming and using stress-tuned silicon oxide films in semiconductor device patterning
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US20200168485A1 (en) 2018-11-28 2020-05-28 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US20200181770A1 (en) 2018-12-05 2020-06-11 Asm Ip Holding B.V. Method of forming a structure including silicon nitride on titanium nitride and structure formed using the method
CN113166929A (zh) 2018-12-05 2021-07-23 朗姆研究公司 无空隙低应力填充
US10777445B2 (en) 2018-12-06 2020-09-15 Asm Ip Holding B.V. Substrate processing apparatus and substrate transfer method
US11640917B2 (en) 2018-12-07 2023-05-02 Applied Materials, Inc. Ground electrode formed in an electrostatic chuck for a plasma processing chamber
CN109716521A (zh) * 2018-12-12 2019-05-03 长江存储科技有限责任公司 用于三维存储器件的接触结构
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP2020096183A (ja) 2018-12-14 2020-06-18 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
US20200203157A1 (en) 2018-12-20 2020-06-25 Nanya Technology Corporation Method for preparing multiplayer structure
USD914620S1 (en) 2019-01-17 2021-03-30 Asm Ip Holding B.V. Vented susceptor
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Ａｓｍ 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10704143B1 (en) 2019-01-25 2020-07-07 Asm Ip Holding B.V. Oxide film forming method
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TW202104632A (zh) 2019-02-20 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
US11482533B2 (en) 2019-02-20 2022-10-25 Asm Ip Holding B.V. Apparatus and methods for plug fill deposition in 3-D NAND applications
TW202100794A (zh) 2019-02-22 2021-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基材處理設備及處理基材之方法
USD881338S1 (en) 2019-02-26 2020-04-14 Ziyong Chen Filter
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
JP2020167398A (ja) 2019-03-28 2020-10-08 エーエスエム・アイピー・ホールディング・ベー・フェー ドアオープナーおよびドアオープナーが提供される基材処理装置
JP2020167380A (ja) 2019-03-28 2020-10-08 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
US20200318237A1 (en) 2019-04-05 2020-10-08 Asm Ip Holding B.V. Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process
US11447864B2 (en) 2019-04-19 2022-09-20 Asm Ip Holding B.V. Layer forming method and apparatus
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー．ブイ． ウェハボートハンドリング装置、縦型バッチ炉および方法
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141002A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법
KR20200141931A (ko) 2019-06-10 2020-12-21 에이에스엠 아이피 홀딩 비.브이. 석영 에피택셜 챔버를 세정하는 방법
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
US20200395199A1 (en) 2019-06-14 2020-12-17 Asm Ip Holding B.V. Substrate treatment apparatus and method of cleaning inside of chamber
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
TW202104645A (zh) 2019-07-09 2021-02-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 包括光阻底層之結構及其形成方法
JP2021015791A (ja) 2019-07-09 2021-02-12 エーエスエム アイピー ホールディング ビー．ブイ． 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
JP2021019198A (ja) 2019-07-19 2021-02-15 エーエスエム・アイピー・ホールディング・ベー・フェー トポロジー制御されたアモルファスカーボンポリマー膜の形成方法
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
KR20210014577A (ko) 2019-07-29 2021-02-09 에이에스엠 아이피 홀딩 비.브이. 불소 제거를 이용해서 구조물을 형성하는 방법
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
KR20210015655A (ko) 2019-07-30 2021-02-10 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 방법
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
US20210035842A1 (en) 2019-07-31 2021-02-04 Asm Ip Holding B.V. Cassette lid opening device
US11915960B2 (en) 2019-07-31 2024-02-27 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210018759A (ko) 2019-08-05 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 화학물질 공급원 용기를 위한 액체 레벨 센서
KR20210018762A (ko) 2019-08-09 2021-02-18 에이에스엠 아이피 홀딩 비.브이. 온도 제어된 화학물질 전달 시스템 및 이를 포함하는 반응기 시스템
CN112342526A (zh) 2019-08-09 2021-02-09 Asm Ip私人控股有限公司 包括冷却装置的加热器组件及其使用方法
KR20210021266A (ko) 2019-08-14 2021-02-25 에이에스엠 아이피 홀딩 비.브이. 웨이퍼를 처리하는 장치 및 방법
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー．ブイ． 成膜原料混合ガス生成装置及び成膜装置
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11133416B2 (en) 2019-08-23 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming semiconductor devices having plural epitaxial layers
KR20210028093A (ko) 2019-08-29 2021-03-11 에이에스엠 아이피 홀딩 비.브이. 유전체 층을 포함하는 구조체 및 이를 형성하는 방법
KR20210028578A (ko) 2019-09-03 2021-03-12 에이에스엠 아이피 홀딩 비.브이. 칼코지나이드 막 및 상기 막을 포함한 구조체를 증착하기 위한 방법 및 장치
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US20210071296A1 (en) 2019-09-06 2021-03-11 Asm Ip Holding B.V. Exhaust component cleaning method and substrate processing apparatus including exhaust component
US20210082692A1 (en) 2019-09-17 2021-03-18 Asm Ip Holding B.V. Method of forming a carbon-containing layer and structure including the layer
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
WO2021071659A1 (en) 2019-10-07 2021-04-15 Applied Materials, Inc. Integrated electrode and ground plane for a substrate support
TW202129060A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ控股公司 基板處理裝置、及基板處理方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
WO2021072042A1 (en) 2019-10-08 2021-04-15 Lam Research Corporation Positive tone development of cvd euv resist films
TW202128273A (zh) 2019-10-08 2021-08-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法
TW202115273A (zh) 2019-10-10 2021-04-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成光阻底層之方法及包括光阻底層之結構
US20210111053A1 (en) 2019-10-14 2021-04-15 Asm Ip Holding B.V. Vertical batch furnace assembly
KR20210045930A (ko) 2019-10-16 2021-04-27 에이에스엠 아이피 홀딩 비.브이. 실리콘 산화물의 토폴로지-선택적 막의 형성 방법
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
KR20210057664A (ko) 2019-11-11 2021-05-21 에이에스엠 아이피 홀딩 비.브이. 실리콘 옥사이드를 포함한 구조물을 형성하는 방법
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP2021090042A (ja) 2019-12-02 2021-06-10 エーエスエム アイピー ホールディング ビー．ブイ． 基板処理装置、基板処理方法
CN112992637A (zh) 2019-12-02 2021-06-18 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
JP2021091968A (ja) 2019-12-06 2021-06-17 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、べベルマスク、基板処理方法
CN112981372B (zh) 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
KR20210089080A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 필터 시스템
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 氣體供應總成以及閥板總成
TW202142733A (zh) 2020-01-06 2021-11-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 反應器系統、抬升銷、及處理方法
US20210207270A1 (en) 2020-01-08 2021-07-08 Asm Ip Holding B.V. Injector
US11401602B2 (en) 2020-01-10 2022-08-02 Applied Materials, Inc. Catalyst enhanced seamless ruthenium gap fill
KR20210093163A (ko) 2020-01-16 2021-07-27 에이에스엠 아이피 홀딩 비.브이. 고 종횡비 피처를 형성하는 방법
KR20210093758A (ko) 2020-01-17 2021-07-28 에이에스엠 아이피 홀딩 비.브이. 적산값을 모니터링하는 기판 처리 장치 및 기판 처리 방법
KR20210095050A (ko) 2020-01-20 2021-07-30 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
KR20210094462A (ko) 2020-01-20 2021-07-29 에이에스엠 아이피 홀딩 비.브이. 전처리를 사용하여 실리콘 질화물 층을 증착하는 방법, 상기 방법을 사용하여 형성된 구조체, 및 상기 방법을 수행하기 위한 시스템
KR20210095798A (ko) 2020-01-23 2021-08-03 에이에스엠 아이피 홀딩 비.브이. 반응 챔버 압력을 안정화하기 위한 시스템 및 방법
TW202131985A (zh) 2020-01-29 2021-09-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 汙染物捕集系統、及擋板堆疊
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 形成包括釩或銦層的結構之方法
KR20210100010A (ko) 2020-02-04 2021-08-13 에이에스엠 아이피 홀딩 비.브이. 대형 물품의 투과율 측정을 위한 방법 및 장치
KR20210100535A (ko) 2020-02-05 2021-08-17 에이에스엠 아이피 홀딩 비.브이. 탄소 재료를 포함한 구조체를 형성하는 방법, 이 방법을 사용하여 형성된 구조체, 및 이 구조체를 형성하기 위한 시스템
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
KR20210103407A (ko) 2020-02-12 2021-08-23 에이에스엠 아이피 홀딩 비.브이. 다중 방향 반응 챔버를 갖는 반응기 시스템
KR20210103956A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법
KR20210103953A (ko) 2020-02-13 2021-08-24 에이에스엠 아이피 홀딩 비.브이. 가스 분배 어셈블리 및 이를 사용하는 방법
KR20210105289A (ko) 2020-02-14 2021-08-26 에이에스엠 아이피 홀딩 비.브이. 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
US20210265158A1 (en) 2020-02-25 2021-08-26 Asm Ip Holding B.V. Method of forming low-k material layer, structure including the layer, and system for forming same
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Ａｓｍ Ｉｐ控股公司 專用於零件清潔的系統
KR20210113043A (ko) 2020-03-04 2021-09-15 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 정렬 고정구
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
US20210285102A1 (en) 2020-03-11 2021-09-16 Applied Materials, Inc. Gap fill methods using catalyzed deposition
US11876356B2 (en) 2020-03-11 2024-01-16 Asm Ip Holding B.V. Lockout tagout assembly and system and method of using same
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
CN113394067A (zh) 2020-03-13 2021-09-14 Asm Ip私人控股有限公司 基板处理设备
US20210292902A1 (en) 2020-03-17 2021-09-23 Asm Ip Holding B.V. Method of depositing epitaxial material, structure formed using the method, and system for performing the method
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Ａｓｍ Ｉｐ控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
KR20210127087A (ko) 2020-04-10 2021-10-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20210127620A (ko) 2020-04-13 2021-10-22 에이에스엠 아이피 홀딩 비.브이. 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US20210327704A1 (en) 2020-04-16 2021-10-21 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210129598A (ko) 2020-04-17 2021-10-28 에이에스엠 아이피 홀딩 비.브이. 수직형 퍼니스의 반응기 내에 배열되도록 구성된 인젝터와 수직형 퍼니스
KR20210130646A (ko) 2020-04-21 2021-11-01 에이에스엠 아이피 홀딩 비.브이. 기판을 처리하기 위한 방법

Also Published As

Publication number Publication date
TW202139267A (zh) 2021-10-16
US20240128090A1 (en) 2024-04-18
CN113394086A (zh) 2021-09-14
US20210287912A1 (en) 2021-09-16
US11961741B2 (en) 2024-04-16

Similar Documents

Publication Publication Date Title
KR20210117157A (ko) 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법
US11127589B2 (en) Method of topology-selective film formation of silicon oxide
US11676812B2 (en) Method for forming silicon nitride film selectively on top/bottom portions
US10283353B2 (en) Method of reforming insulating film deposited on substrate with recess pattern
US11637011B2 (en) Method of topology-selective film formation of silicon oxide
US11527400B2 (en) Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US10655221B2 (en) Method for depositing oxide film by thermal ALD and PEALD
KR102434504B1 (ko) 토폴로지상 제한된 플라즈마-강화 순환 증착의 방법
US10468251B2 (en) Method for forming spacers using silicon nitride film for spacer-defined multiple patterning
US9909214B2 (en) Method for depositing dielectric film in trenches by PEALD
US10290508B1 (en) Method for forming vertical spacers for spacer-defined patterning
US20200111669A1 (en) Method for depositing oxide film by peald using nitrogen
US9754779B1 (en) Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10964587B2 (en) Atomic layer deposition for low-K trench protection during etch
TWI766433B (zh) 形成氣隙的系統及方法
JP7233173B2 (ja) トレンチの側壁又は平坦面上に選択的に窒化ケイ素膜を形成する方法
CN107794515B (zh) 通过形成基于烃的超薄膜对层进行保护的方法

Legal Events

Date Code Title Description
A201 Request for examination