JP4563729B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP4563729B2 JP4563729B2 JP2004159186A JP2004159186A JP4563729B2 JP 4563729 B2 JP4563729 B2 JP 4563729B2 JP 2004159186 A JP2004159186 A JP 2004159186A JP 2004159186 A JP2004159186 A JP 2004159186A JP 4563729 B2 JP4563729 B2 JP 4563729B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
Claims (18)
- 被処理基板を収納し、プラズマを発生するプラズマ発生室と、
前記プラズマ発生室の上部の開口部に配置され、マイクロ波によって駆動されて電磁界を発生するアンテナと、
前記アンテナの下部に設けられ、面方向に渡って均一な所定の厚さを有して前記プラズマ発生室の開口部を封止する天板と、
前記天板の下面側に形成されるテーパ状部とを備え、
前記テーパ状部の先端側、および前記テーパ状部の天板側に位置する前記天板の下面側の両方には、平面が形成されている、プラズマ処理装置。 - 前記天板の厚みはλ/4±λ/8に選ばれている、請求項1に記載のプラズマ処理装置。
- 前記テーパ状部は前記天板の下面に形成されるリング状の突条を含む、請求項1または2に記載のプラズマ処理装置。
- 前記天板は円板状であって、
前記リング状の突条は、前記天板の中心と同心的に径方向に複数形成される、請求項3に記載のプラズマ処理装置。 - 前記リング状の突条は、前記天板側の径方向厚さが先端側の径方向厚さよりも厚く形成される、請求項3または4に記載のプラズマ処理装置。
- 前記テーパ状部は、前記天板の下面に形成される円錘状の突起を含む、請求項1から3のいずれかに記載のプラズマ処理装置。
- 前記円錐状の突起は、前記天板の中心下面に形成される、請求項6に記載のプラズマ処理装置。
- 前記リング状の突条は、前記天板の中心と同心的に複数形成され、天板の中心に近い第1の突条と、天板の中心から遠い第2の突条とを含む、請求項7に記載のプラズマ処理装置。
- 前記第2の突条の肉厚は、前記第1の突条の肉厚に比べて厚く形成される、請求項8に記載のプラズマ処理装置。
- 前記天板のアンテナ側の中心部には凹部が形成されており、前記凹部には前記天板の誘電率と異なる物質が配置される、請求項1から9のいずれかに記載のプラズマ処理装置。
- 前記天板のアンテナ側における凹部の深さはλ/8以上の深さに形成される、請求項10に記載のプラズマ処理装置。
- 前記天板のアンテナ側における凹部の深さはλ/4以上の深さに形成される、請求項10に記載のプラズマ処理装置。
- 前記円錐状の突起の周辺における天板の肉厚は、λ/4±λ/8である、請求項6から8のいずれかに記載のプラズマ処理装置。
- 前記被処理基板は円板状であって、
前記テーパ状部は、前記被処理基板の半径をRとしたとき、前記天板の中心から半径Rより外側に少なくとも1つ形成されている、請求項4、5、7から9のいずれかに記載のプラズマ処理装置。 - 前記テーパ状部は、前記天板と前記被処理基板との距離をDとしたとき、前記天板の中心から半径Dより内側に少なくとも1つ形成されている、請求項4、5,7から9のいずれかに記載のプラズマ処理装置。
- 前記アンテナは、複数のスロットが所定のパターンで分布するように形成されたスロット板を含み、
前記天板の下面の前記テーパ状部は、前記所定のパターンに対応する位置に延在するように形成されている、請求項1から5のいずれかに記載のプラズマ処理装置。 - 前記テーパ状部は複数の円錐状の突起を含む、請求項16に記載のプラズマ処理装置。
- 前記テーパ状部の下面には、同心的に複数のリング状の溝が形成されている、請求項4、5、7から9のいずれかに記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004159186A JP4563729B2 (ja) | 2003-09-04 | 2004-05-28 | プラズマ処理装置 |
PCT/JP2004/012824 WO2005031830A1 (ja) | 2003-09-04 | 2004-09-03 | プラズマ処理装置 |
KR1020067002758A KR100824813B1 (ko) | 2003-09-04 | 2004-09-03 | 플라즈마 처리 장치 |
TW093126710A TWI454186B (zh) | 2003-09-04 | 2004-09-03 | Plasma processing device |
US10/570,631 US7930992B2 (en) | 2003-09-04 | 2004-09-03 | Plasma processing equipment |
TW101143844A TWI436697B (zh) | 2003-09-04 | 2004-09-03 | Plasma processing device |
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JP2003312486 | 2003-09-04 | ||
JP2004159186A JP4563729B2 (ja) | 2003-09-04 | 2004-05-28 | プラズマ処理装置 |
Related Child Applications (1)
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JP2010129799A Division JP2010258461A (ja) | 2003-09-04 | 2010-06-07 | プラズマ処理装置、およびプラズマ処理装置用の天板 |
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JP2005100931A JP2005100931A (ja) | 2005-04-14 |
JP2005100931A5 JP2005100931A5 (ja) | 2007-07-05 |
JP4563729B2 true JP4563729B2 (ja) | 2010-10-13 |
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JP2004159186A Expired - Fee Related JP4563729B2 (ja) | 2003-09-04 | 2004-05-28 | プラズマ処理装置 |
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US (1) | US7930992B2 (ja) |
JP (1) | JP4563729B2 (ja) |
KR (1) | KR100824813B1 (ja) |
TW (2) | TWI436697B (ja) |
WO (1) | WO2005031830A1 (ja) |
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- 2004-09-03 WO PCT/JP2004/012824 patent/WO2005031830A1/ja active Application Filing
- 2004-09-03 US US10/570,631 patent/US7930992B2/en not_active Expired - Fee Related
- 2004-09-03 KR KR1020067002758A patent/KR100824813B1/ko active IP Right Grant
- 2004-09-03 TW TW101143844A patent/TWI436697B/zh not_active IP Right Cessation
- 2004-09-03 TW TW093126710A patent/TWI454186B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004511906A (ja) * | 2000-10-13 | 2004-04-15 | ラム リサーチ コーポレーション | プラズマ処理の均一性のためのステップのある上部電極 |
JP2002176033A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | プラズマ処理装置 |
JP2002299240A (ja) * | 2001-03-28 | 2002-10-11 | Tadahiro Omi | プラズマ処理装置 |
JP2003059919A (ja) * | 2001-08-17 | 2003-02-28 | Ulvac Japan Ltd | マイクロ波プラズマ処理装置および処理方法 |
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KR100824813B1 (ko) | 2008-04-23 |
TW200522801A (en) | 2005-07-01 |
TWI436697B (zh) | 2014-05-01 |
KR20060038466A (ko) | 2006-05-03 |
JP2005100931A (ja) | 2005-04-14 |
WO2005031830A1 (ja) | 2005-04-07 |
TWI454186B (zh) | 2014-09-21 |
US20070113788A1 (en) | 2007-05-24 |
US7930992B2 (en) | 2011-04-26 |
TW201313076A (zh) | 2013-03-16 |
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