JP4585574B2 - プラズマ処理装置およびプラズマ処理方法 - Google Patents
プラズマ処理装置およびプラズマ処理方法 Download PDFInfo
- Publication number
- JP4585574B2 JP4585574B2 JP2008045023A JP2008045023A JP4585574B2 JP 4585574 B2 JP4585574 B2 JP 4585574B2 JP 2008045023 A JP2008045023 A JP 2008045023A JP 2008045023 A JP2008045023 A JP 2008045023A JP 4585574 B2 JP4585574 B2 JP 4585574B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- interval
- processing
- dielectric plate
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Description
Claims (7)
- その内部で被処理基板にプラズマ処理を行う処理容器と、
前記処理容器内にプラズマ処理用の解離性を有する反応ガスを供給する反応ガス供給手段と、
前記処理容器内に配置され、その上に前記被処理基板を保持する保持台と、
プラズマ励起用のマイクロ波を発生させるマイクロ波発生器と、
前記保持台と対向する位置に配置され、マイクロ波を前記処理容器内に導入する誘電板と、
前記保持台と前記誘電板との間隔を第1の間隔に変更して、導入されたマイクロ波により前記処理容器内に電界を生じさせた状態で、前記処理容器内にプラズマを発生させ、前記保持台と前記誘電板との間隔を前記第1の間隔とは異なる第2の間隔に変更して、前記被処理基板へのプラズマ処理を行うよう制御する制御手段とを備え、
前記制御手段は、前記保持台を昇降させて、前記保持台と前記誘電板との間隔を変更する昇降手段を備え、
前記制御手段は、マイクロ波の導入により前記誘電板に形成された定在波の周期性に応じて、前記第1の間隔を変更し、前記第2の間隔を前記第1の間隔よりも狭くする、プラズマ処理装置。 - 前記制御手段による前記被処理基板へのプラズマ処理は、オキサイド系被膜に対するエッチング処理である、請求項1に記載のプラズマ処理装置。
- その内部で被処理基板にプラズマ処理を行う処理容器と、
前記処理容器内にプラズマ処理用の解離性を有しない反応ガスを供給する反応ガス供給手段と、
前記処理容器内に配置され、その上に前記被処理基板を保持する保持台と、
プラズマ励起用のマイクロ波を発生させるマイクロ波発生器と、
前記保持台と対向する位置に配置され、マイクロ波を前記処理容器内に導入する誘電板と、
前記保持台と前記誘電板との間隔を第1の間隔に変更して、導入されたマイクロ波により前記処理容器内に電界を生じさせた状態で、前記処理容器内にプラズマを発生させ、前記保持台と前記誘電板との間隔を前記第1の間隔とは異なる第2の間隔に変更して、前記被処理基板へのプラズマ処理を行うよう制御する制御手段とを備え、
前記制御手段は、前記保持台を昇降させて、前記保持台と前記誘電板との間隔を変更する昇降手段を備え、
前記制御手段は、マイクロ波の導入により前記誘電板に形成された定在波の周期性に応じて、前記第1の間隔を変更し、前記第2の間隔を前記第1の間隔よりも広くする、プラズマ処理装置。 - 前記制御手段による前記被処理基板へのプラズマ処理は、ポリシリコン系被膜に対するエッチング処理である、請求項3に記載のプラズマ処理装置。
- 複数設けられたスロット穴からマイクロ波を前記誘電板に導入するスロットアンテナ板を備える、請求項1〜4のいずれかに記載のプラズマ処理装置。
- 被処理基板をプラズマ処理するためのプラズマ処理方法であって、
処理容器内に設けられた保持台上に被処理基板を保持させる工程と、
プラズマ励起用のマイクロ波を発生させる工程と、
前記処理容器内に、解離性を有する反応ガスを供給する反応ガス供給工程と、
前記保持台に対向する位置に配置される誘電板を介して前記処理容器内にマイクロ波を導入し、前記処理容器内に電界を生じさせる工程と、
マイクロ波の導入により前記誘電板に形成された定在波の周期性に応じて、保持台と誘電板との間隔を第1の間隔として、前記処理容器内に電界を生じさせた状態で前記処理容器内にプラズマを発生させる工程と、
プラズマを発生させた後、前記保持台を昇降させて、保持台と誘電板との間隔を前記第1の間隔と異なる第2の間隔として、前記被処理基板のプラズマ処理を行う工程とを含み、
前記被処理基板のプラズマ処理を行う工程は、前記第2の間隔を前記第1の間隔よりも狭くする、プラズマ処理方法。 - 被処理基板をプラズマ処理するためのプラズマ処理方法であって、
処理容器内に設けられた保持台上に被処理基板を保持させる工程と、
プラズマ励起用のマイクロ波を発生させる工程と、
前記処理容器内に、解離性を有しない反応ガスを供給する反応ガス供給工程と、
前記保持台に対向する位置に配置される誘電板を介して前記処理容器内にマイクロ波を導入し、前記処理容器内に電界を生じさせる工程と、
マイクロ波の導入により前記誘電板に形成された定在波の周期性に応じて、保持台と誘電板との間隔を第1の間隔として、前記処理容器内に電界を生じさせた状態で前記処理容器内にプラズマを発生させる工程と、
プラズマを発生させた後、前記保持台を昇降させて、保持台と誘電板との間隔を前記第1の間隔と異なる第2の間隔として、前記被処理基板のプラズマ処理を行う工程とを含み、
前記被処理基板のプラズマ処理を行う工程は、前記第2の間隔を前記第1の間隔よりも広くする、プラズマ処理方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008045023A JP4585574B2 (ja) | 2008-02-26 | 2008-02-26 | プラズマ処理装置およびプラズマ処理方法 |
CN2009100053900A CN101521980B (zh) | 2008-02-26 | 2009-02-24 | 等离子体处理装置及等离子体处理方法 |
US12/392,228 US20090215274A1 (en) | 2008-02-26 | 2009-02-25 | Plasma processing apparatus and plasma processing method |
TW098106165A TWI444109B (zh) | 2008-02-26 | 2009-02-26 | 電漿處理裝置及電漿處理方法 |
KR1020090016156A KR101094980B1 (ko) | 2008-02-26 | 2009-02-26 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
US14/087,368 US20140080311A1 (en) | 2008-02-26 | 2013-11-22 | Plasma processing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008045023A JP4585574B2 (ja) | 2008-02-26 | 2008-02-26 | プラズマ処理装置およびプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009206192A JP2009206192A (ja) | 2009-09-10 |
JP4585574B2 true JP4585574B2 (ja) | 2010-11-24 |
Family
ID=40998743
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008045023A Expired - Fee Related JP4585574B2 (ja) | 2008-02-26 | 2008-02-26 | プラズマ処理装置およびプラズマ処理方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20090215274A1 (ja) |
JP (1) | JP4585574B2 (ja) |
KR (1) | KR101094980B1 (ja) |
CN (1) | CN101521980B (ja) |
TW (1) | TWI444109B (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101565432B1 (ko) * | 2010-03-31 | 2015-11-03 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치용 유전체창, 플라즈마 처리 장치 및 플라즈마 처리 장치용 유전체창의 장착 방법 |
KR101425760B1 (ko) * | 2010-08-27 | 2014-08-01 | 도쿄엘렉트론가부시키가이샤 | 에칭 방법, 기판 처리 방법, 패턴 형성 방법, 반도체 소자의 제조 방법, 및 반도체 소자 |
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
KR101947844B1 (ko) * | 2011-05-10 | 2019-02-13 | 램 리써치 코포레이션 | 다수의 디커플링된 플라즈마 소스들을 갖는 반도체 프로세싱 시스템 |
JP6016339B2 (ja) | 2011-08-12 | 2016-10-26 | 東京エレクトロン株式会社 | カーボンナノチューブの加工方法及び加工装置 |
JP5527490B2 (ja) | 2011-11-11 | 2014-06-18 | 東京エレクトロン株式会社 | プラズマ処理装置用誘電体窓、およびプラズマ処理装置 |
JP2014075234A (ja) * | 2012-10-03 | 2014-04-24 | Tokyo Electron Ltd | アンテナ及びプラズマ処理装置 |
JP2014160557A (ja) * | 2013-02-19 | 2014-09-04 | Tokyo Electron Ltd | プラズマ処理装置 |
JP6624833B2 (ja) * | 2015-07-31 | 2019-12-25 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
CN106086821A (zh) * | 2016-08-24 | 2016-11-09 | 佛山市思博睿科技有限公司 | 一种可提高膜层纯度的等离子法沉积膜层的装置 |
KR102581681B1 (ko) * | 2018-09-05 | 2023-09-22 | 삼성전자주식회사 | 플라즈마 증착 방법 및 플라즈마 증착 장치 |
JP7180847B2 (ja) * | 2018-12-18 | 2022-11-30 | 東京エレクトロン株式会社 | カーボンハードマスク、成膜装置、および成膜方法 |
CN109905955B (zh) * | 2019-03-13 | 2023-12-22 | 中国科学院微电子研究所 | 原子态等离子体形成装置及其应用 |
KR102619965B1 (ko) * | 2022-05-16 | 2024-01-02 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209484A (ja) * | 1989-02-08 | 1990-08-20 | Hitachi Ltd | プラズマ処理方法及びその装置 |
JPH04132215A (ja) * | 1990-09-21 | 1992-05-06 | Fuji Electric Co Ltd | マイクロ波プラズマ処理装置およびその操作方法 |
JPH05242997A (ja) * | 1992-02-27 | 1993-09-21 | Nec Corp | プラズマ装置 |
JP2003045964A (ja) * | 2001-07-30 | 2003-02-14 | Nec Corp | 半導体装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100321325B1 (ko) * | 1993-09-17 | 2002-06-20 | 가나이 쓰도무 | 플라즈마생성방법및장치와그것을사용한플라즈마처리방법및장치 |
US5565036A (en) * | 1994-01-19 | 1996-10-15 | Tel America, Inc. | Apparatus and method for igniting plasma in a process module |
US6039834A (en) * | 1997-03-05 | 2000-03-21 | Applied Materials, Inc. | Apparatus and methods for upgraded substrate processing system with microwave plasma source |
TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
JP4336124B2 (ja) * | 2003-03-10 | 2009-09-30 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
CN100492591C (zh) * | 2003-09-04 | 2009-05-27 | 东京毅力科创株式会社 | 等离子处理装置 |
JP4563729B2 (ja) * | 2003-09-04 | 2010-10-13 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2005217240A (ja) * | 2004-01-30 | 2005-08-11 | Matsushita Electric Ind Co Ltd | ドライエッチング装置およびドライエッチング方法 |
-
2008
- 2008-02-26 JP JP2008045023A patent/JP4585574B2/ja not_active Expired - Fee Related
-
2009
- 2009-02-24 CN CN2009100053900A patent/CN101521980B/zh not_active Expired - Fee Related
- 2009-02-25 US US12/392,228 patent/US20090215274A1/en not_active Abandoned
- 2009-02-26 TW TW098106165A patent/TWI444109B/zh not_active IP Right Cessation
- 2009-02-26 KR KR1020090016156A patent/KR101094980B1/ko not_active IP Right Cessation
-
2013
- 2013-11-22 US US14/087,368 patent/US20140080311A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02209484A (ja) * | 1989-02-08 | 1990-08-20 | Hitachi Ltd | プラズマ処理方法及びその装置 |
JPH04132215A (ja) * | 1990-09-21 | 1992-05-06 | Fuji Electric Co Ltd | マイクロ波プラズマ処理装置およびその操作方法 |
JPH05242997A (ja) * | 1992-02-27 | 1993-09-21 | Nec Corp | プラズマ装置 |
JP2003045964A (ja) * | 2001-07-30 | 2003-02-14 | Nec Corp | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090092250A (ko) | 2009-08-31 |
TW200950602A (en) | 2009-12-01 |
TWI444109B (zh) | 2014-07-01 |
KR101094980B1 (ko) | 2011-12-20 |
CN101521980A (zh) | 2009-09-02 |
US20090215274A1 (en) | 2009-08-27 |
JP2009206192A (ja) | 2009-09-10 |
CN101521980B (zh) | 2012-07-04 |
US20140080311A1 (en) | 2014-03-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4585574B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
US8753527B2 (en) | Plasma etching method and plasma etching apparatus | |
KR101056199B1 (ko) | 플라즈마 산화 처리 방법 | |
US9177846B2 (en) | Placing bed structure, treating apparatus using the structure, and method for using the apparatus | |
KR100896552B1 (ko) | 플라즈마 에칭방법 | |
US10017853B2 (en) | Processing method of silicon nitride film and forming method of silicon nitride film | |
KR101147964B1 (ko) | 플라즈마 에칭 처리 방법 및 플라즈마 에칭 처리 장치 | |
JP2002538618A (ja) | 時間変調プラズマによる種の動的制御 | |
JP5847496B2 (ja) | プラズマ生成用電源装置及びプラズマ生成パラメータ設定方法 | |
KR20170073504A (ko) | 에칭 방법 | |
JP5565892B2 (ja) | プラズマ処理装置、プラズマ処理方法、および電子デバイスの製造方法 | |
KR101098975B1 (ko) | 기판 처리 장치 | |
JP7236954B2 (ja) | プラズマ処理装置 | |
JP7045954B2 (ja) | ハードマスク用膜を形成する方法および装置、ならびに半導体装置の製造方法 | |
KR20190100874A (ko) | 플라즈마 프로세스에서 오염물 입자들을 제거하기 위한 장치 및 방법들 | |
KR102471811B1 (ko) | 처리 장치 및 매립 방법 | |
KR20220115511A (ko) | 기판 지지기, 플라즈마 처리 시스템 및 플라즈마 에칭 방법 | |
JP2024004544A (ja) | 基板処理方法および基板処理装置 | |
JP2015198083A (ja) | プラズマ処理装置及びプラズマ処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100126 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100330 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100712 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100831 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100903 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130910 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |