JP5419276B2 - 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム - Google Patents
材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム Download PDFInfo
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- JP5419276B2 JP5419276B2 JP2009293533A JP2009293533A JP5419276B2 JP 5419276 B2 JP5419276 B2 JP 5419276B2 JP 2009293533 A JP2009293533 A JP 2009293533A JP 2009293533 A JP2009293533 A JP 2009293533A JP 5419276 B2 JP5419276 B2 JP 5419276B2
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- 239000000463 material Substances 0.000 title claims description 265
- 239000007789 gas Substances 0.000 claims description 260
- 239000012159 carrier gas Substances 0.000 claims description 71
- 230000008016 vaporization Effects 0.000 claims description 27
- 230000008859 change Effects 0.000 claims description 24
- 238000009834 vaporization Methods 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 12
- 238000009530 blood pressure measurement Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 description 16
- 230000007246 mechanism Effects 0.000 description 9
- 230000005587 bubbling Effects 0.000 description 8
- 238000004364 calculation method Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 5
- 238000011144 upstream manufacturing Methods 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000012544 monitoring process Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002438 flame photometric detection Methods 0.000 description 1
- 238000001285 laser absorption spectroscopy Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011364 vaporized material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D11/00—Control of flow ratio
- G05D11/02—Controlling ratio of two or more flows of fluid or fluent material
- G05D11/13—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means
- G05D11/135—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture
- G05D11/138—Controlling ratio of two or more flows of fluid or fluent material characterised by the use of electric means by sensing at least one property of the mixture by sensing the concentration of the mixture, e.g. measuring pH value
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/0318—Processes
- Y10T137/0396—Involving pressure control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2499—Mixture condition maintaining or sensing
- Y10T137/2509—By optical or chemical property
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/2496—Self-proportioning or correlating systems
- Y10T137/2708—Plural sensors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/7722—Line condition change responsive valves
- Y10T137/7736—Consistency responsive
Description
1・・・材料気化システム(バブリングシステム)
11・・・導入管
12・・・導出管
13・・・タンク
23・・・第1バルブ
CS・・・濃度測定部
CC・・・濃度制御部
41・・・温調器
42・・・温度設定部
5・・・補助バルブ
Claims (5)
- 材料を収容するタンクと、収容された前記材料を気化させるキャリアガスを前記タンクに導入する導入管と、前記材料が気化した材料ガス及び前記キャリアガスの混合ガスを前記タンクから導出する導出管とを具備した材料気化システムに用いられるものであって、
前記導出管上に設けられる第1バルブと、
前記混合ガスにおける前記材料ガスの濃度を測定する濃度測定部と、
前記濃度測定部で測定された前記材料ガスの測定濃度が、予め定められた設定濃度となるように前記第1バルブの開度を制御する濃度制御部と、
前記タンク内の温度を設定温度となるように温調する温調器と、
前記温調器の設定温度を設定する温度設定部とを備え、
前記第1バルブの開度が、可動範囲の開放限界開度に基づいて定められる開放側閾値開度を超えた場合には、前記温度設定部が、その時点で設定されている設定温度よりも高い温度に設定温度を変更することを特徴とする材料ガス濃度制御システム。 - 前記閾値が前記第1バルブの開度の変化率に応じて変更されるものである請求項1記載の材料ガス濃度制御システム。
- 材料を収容するタンクと、収容された前記材料を気化させるキャリアガスを前記タンクに導入する導入管と、前記材料が気化した材料ガス及び前記キャリアガスの混合ガスを前記タンクから導出する導出管とを具備した材料気化システムに用いられるものであって、
前記導出管上に設けられる第1バルブと、
前記材料ガスの分圧を測定する分圧測定センサと、前記混合ガスの全圧を測定する全圧測定センサとを具備し、前記分圧と前記全圧に基づいて前記混合ガスにおける前記材料ガスの濃度を測定する濃度測定部と、
前記濃度測定部で測定された前記材料ガスの測定濃度が、予め定めた設定濃度となるように前記第1バルブの開度を制御する濃度制御部と、
前記タンク内の温度を設定温度となるように温調する温調器と、
前記温調器に設定温度を設定する温度設定部とを備え、
前記分圧測定センサにより測定される分圧が、前記第1バルブの可動範囲の開放限界開度に基づいて定められる下限閾値分圧を下回った場合には、前記温度設定部が、その時点で設定されている設定温度よりも高い温度に設定温度を変更することを特徴とする材料ガス濃度制御システム。 - 材料を収容するタンクと、収容された前記材料を気化させるキャリアガスを前記タンクに導入する導入管と、前記材料が気化した材料ガス及び前記キャリアガスの混合ガスを前記タンクから導出する導出管とを具備した材料気化システムに用いられるものであって、
前記導入管上に設けられる第2バルブと、
前記材料ガスの流量を測定する材料ガス流量測定部と、
前記材料ガス流量測定部で測定された前記材料ガスの測定流量が、予め定められた設定流量となるように前記第2バルブの開度を制御する材料ガス流量制御部と、
前記タンク内の温度を設定温度となるように温調する温調器と、
前記温調器の設定温度を設定する温度設定部とを備え、
前記第2バルブの開度が、可動範囲の開放限界開度に基づいて定められる開放側閾値開度を超えた場合には、前記温度設定部が、その時点で設定されている設定温度よりも高い温度に設定温度を変更することを特徴とする材料ガス流量制御システム。 - 材料を収容するタンクと、収容された前記材料を気化させるキャリアガスを前記タンクに導入する導入管と、前記材料が気化した材料ガス及び前記キャリアガスの混合ガスを前記タンクから導出する導出管とを具備した材料気化システムに用いられるものであり、
前記導出管上に設けられる第1バルブと、前記混合ガスにおける前記材料ガスの濃度を測定する濃度測定部と、前記濃度測定部で測定された前記材料ガスの測定濃度が、予め定められた設定濃度となるように前記第1バルブの開度を制御する濃度制御部と、前記タンク内の温度を設定温度となるように温調する温調器とを備えた材料ガス濃度制御システムに用いられる材料ガス濃度制御システム用プログラムであって、
前記材料ガス濃度制御システム用プログラムが、前記温調器の設定温度を設定する温度設定部を備え、
前記第1バルブの開度が、可動範囲の開放限界開度に基づいて定められる開放側閾値開度を超えた場合には、前記温度設定部が、その時点で設定されている設定温度よりも高い温度に設定温度を変更することを特徴とする材料ガス濃度制御システム用プログラム。
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JP2009293533A JP5419276B2 (ja) | 2009-12-24 | 2009-12-24 | 材料ガス濃度制御システム及び材料ガス濃度制御システム用プログラム |
TW099144303A TWI518745B (zh) | 2009-12-24 | 2010-12-16 | 材料氣體濃度控制系統及材料氣體濃度控制系統用程式 |
CN201010601694.6A CN102156489B (zh) | 2009-12-24 | 2010-12-16 | 材料气体浓度控制系统及材料气体浓度控制系统用程序 |
US12/976,754 US8459291B2 (en) | 2009-12-24 | 2010-12-22 | Source gas concentration control system |
KR1020100132410A KR101685711B1 (ko) | 2009-12-24 | 2010-12-22 | 재료 가스 농도 제어 시스템 |
DE102010056004A DE102010056004A1 (de) | 2009-12-24 | 2010-12-23 | Quellengaskonzentrationssteuersystem |
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JP5419276B2 true JP5419276B2 (ja) | 2014-02-19 |
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US (1) | US8459291B2 (ja) |
JP (1) | JP5419276B2 (ja) |
KR (1) | KR101685711B1 (ja) |
CN (1) | CN102156489B (ja) |
DE (1) | DE102010056004A1 (ja) |
TW (1) | TWI518745B (ja) |
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JP2008282622A (ja) | 2007-05-09 | 2008-11-20 | Toyota Motor Corp | 燃料電池の検査装置 |
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CN102156489A (zh) | 2011-08-17 |
CN102156489B (zh) | 2014-11-26 |
DE102010056004A1 (de) | 2011-08-25 |
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