JP4847231B2 - 電界に起因する剥離物による汚染を防止する装置 - Google Patents
電界に起因する剥離物による汚染を防止する装置 Download PDFInfo
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- JP4847231B2 JP4847231B2 JP2006180384A JP2006180384A JP4847231B2 JP 4847231 B2 JP4847231 B2 JP 4847231B2 JP 2006180384 A JP2006180384 A JP 2006180384A JP 2006180384 A JP2006180384 A JP 2006180384A JP 4847231 B2 JP4847231 B2 JP 4847231B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
Description
F=qE-(1/2)E2∇ε+(1/2)∇(E2mdε/dm)
また特許文献2では、減圧処理室内の部材を清浄化してパーティクル汚染を防止する方法をいくつか提案している。そのうちのひとつに、前従来例と同様に、電界下で微粒子と部材の誘電率の差に起因するこれらの間に働く力を用いて微粒子を除去する方法が提案されている。この従来例では、付着膜に働く力を表す前述の式について、「第1項は、微粒子の帯電によるクーロン力を示す。第2項は、∇εが誘電率の場所による微分であるから、誘電率の変化する場所で電界が働くとマイナスの力が発生することを示す。第3項は、変形などによって密度mに対して誘電率εが変わる物質に働く力を示すが、このような物質にはゴムなどがあるが、半導体製造装置内の微粒子を考える場合には、第3項は無視してよいと考えられる。」と説明している。すなわち、界面に加わる力Fは第2項のみで、付着物と誘電率の近い材料を用いることで力Fを抑制し、剥離によるパーティクルの発生を抑止することが述べられている。
上記特許文献で述べられている下式については、
F=qE-(1/2)E2∇ε+(1/2)∇(E2mdε/dm)
誘電体はほとんど真電荷が存在せず、第1項の真電荷に作用する力は無視できる。第3項の変形に伴う誘電率変化については、特許文献1で述べられている様に弾性率が同じ物質を用いても、変形により誘電率が変化する量は物質により異なるため、弾性率を同じにしても第3項の力は同じにはならない。また、特許文献2で述べられている様に第3項が無視できるか考えると、例えば等方性の物質ではクラウジウス・モソッティ(Clausius-Mossotti)の式が適用でき、その変化は比誘電率の自乗に応じて変化する。つまり比誘電率に対し1次に変化する第2項に比べ、第3項は大きくなる。誘電体の変形に伴う誘電率変化の違いを無視してしまうと発塵を制御する事ができなくなる。
一方、静磁界に対し電磁気学現象理論(竹山説三著、丸善)同様の考察を加えると、静磁界の元では透磁率の違いによる力と、物体の変形に伴う透磁率変化の違いに応じて作用する力の2つが存在する。この磁界に起因する力が原因で生じる付着膜の剥離については、従来対策は行われておらず、磁界が発生する装置での発塵の制御ができていなかった。
装置内部に空間を有し、該空間に電界が発生する装置であって、装置使用にともなって付着する前記装置内部の部品に付着する付着膜の質量密度と誘電率の質量密度微分値の積(A)と、前記装置内部の前記部品の表面を構成する材料の質量密度と誘電率の質量密度微分値の積(B)と、の差が、前記(A)に対して5%以下であり、
前記部品の表面を構成する材料が前記付着膜と異なる材料であることを特徴とする装置が提供される。
F=qE-(1/2)E2∇ε+(1/2)∇(E2mdε/dm)
以上、この発明の実施例を図面により詳述してきたが、具体的な構成はこの実施例に限られるものではなく、この発明の要旨を逸脱しない範囲の設計の変更等があってもこの発明に含まれる。例えば、プラズマ装置のプラズマ発生原理に関しては高周波プラズマ、ECRプラズマを挙げたが、これに限らず、DCプラズマ、マイクロ波プラズマ、二周波高周波プラズマにも適用できる。また、各実施例で示した加工ガス種、反応生成物種、表面材料等は一例を示したものであり、目的、用途等に応じて適宜に変更することができる。各実施例は単独で実施する以外に、適宜に組み合わせて実施することができ、このようにすることで基板や試料の汚染防止効果を相乗的に得ることができる。
2 電界
3 パーティクル
4 付着膜
5 ウエハ
6 ガイドリング
7 静電チャック電極
8 上部電極
8a 上部電極表面
9 観測範囲
10 排気口
11 サセプタ
11a サセプタ表面
12 チェンバ壁
12a チェンバ壁表面
13 下部電極
14 回転軸
15 ヒーター
16 CVD装置
17 処理用ガスの導入口
18 ガス板
18a ガス板表面
19 ウエハステージ
19a ウエハステージ表面
20 下部電極
20a 下部電極表面
21 ゲートバルブ
21a ゲートバルブ表面
22 プラズマエッチング装置
23 イオン源
24 コンデンサレンズ
25 ビームブランカ
26 アライナ
27 静電レンズ
28 偏向電極
29 試料
30 イオンビーム
31 FIB装置
32 電磁レンズ
33 電子銃
34 EB露光機
35 磁石
36 保護板
37 電子顕微鏡
Claims (5)
- 装置内部に空間を有し、該空間に電界が発生する装置であって、装置使用にともなって付着する前記装置内部の部品に付着する付着膜の質量密度と誘電率の質量密度微分値の積(A)と、前記装置内部の前記部品の表面を構成する材料の質量密度と誘電率の質量密度微分値の積(B)と、の差が、前記(A)に対して5%以下であり、
前記部品の表面を構成する材料が前記付着膜と異なる材料であることを特徴とする装置。 - 請求項1に記載の装置であって、
前記付着膜は、酸化シリコンであり、
前記部品の表面は、空孔を含むイットリウムアルミニウムガーネットであることを特徴とする装置。 - 請求項1に記載の装置であって、
前記(B)の値は、前記装置内部の前記部品そのものを構成する材料の質量密度と誘電率の質量密度微分値の積である装置。 - 請求項1乃至3いずれかに記載の装置であって、
前記付着膜が、複数の物質の複合体からなり、前記複数の物質の質量密度と誘電率の質量密度微分値の積を、それぞれの体積もしくは重量に応じて平均した値を前記(A)の値として用いることを特徴とする装置。 - 請求項1乃至3いずれかに記載の装置であって、
前記付着膜が、複数の物質の複合体からなり、前記複数の物質の質量密度と誘電率の質量密度微分値の積のうち、最も大きな体積もしくは重量を占める物質の値を前記(A)の値として用いることを特徴とする装置。
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JP2006180384A JP4847231B2 (ja) | 2006-06-29 | 2006-06-29 | 電界に起因する剥離物による汚染を防止する装置 |
US11/769,919 US8051799B2 (en) | 2006-06-29 | 2007-06-28 | Object-processing apparatus controlling production of particles in electric field or magnetic field |
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JP4847231B2 true JP4847231B2 (ja) | 2011-12-28 |
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