JPH0729836A - プラズマシリコンナイトライド膜の形成方法 - Google Patents
プラズマシリコンナイトライド膜の形成方法Info
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Abstract
(57)【要約】
【目的】 Ｓｉを含んだガス（例えばＳｉＨ4 ）とＮを
含んだガス（例えばＮＨ3 ＋Ｎ2 ）を供給しながらプラ
ズマ照射することによりＳｉＮ膜を形成するＰ−ＳｉＮ
膜の形成方法において、下地との密着性が高く剥れにく
いＰ−ＳｉＮ膜を形成できるようにする。 【構成】 プラズマ照射しながら先ずＮを含んだガスの
みを供給してＮリッチなＳｉＮ膜７を形成し、その後、
Ｓｉを含んだガスも供給してＳｉＮ膜８の形成を続け
る。
含んだガス（例えばＮＨ3 ＋Ｎ2 ）を供給しながらプラ
ズマ照射することによりＳｉＮ膜を形成するＰ−ＳｉＮ
膜の形成方法において、下地との密着性が高く剥れにく
いＰ−ＳｉＮ膜を形成できるようにする。 【構成】 プラズマ照射しながら先ずＮを含んだガスの
みを供給してＮリッチなＳｉＮ膜７を形成し、その後、
Ｓｉを含んだガスも供給してＳｉＮ膜８の形成を続け
る。
Description
【０００１】
【産業上の利用分野】本発明は、プラズマシリコンナイ
トライドＰ−ＳｉＮ膜の形成方法、特にモノシランＳｉ
Ｈ4 あるいはジクロールシランＳｉＨ2 Ｃｌ2 等シリコ
ンＳｉを含んだガスと、アンモニアＮＨ3 等窒素Ｎを含
んだガスを供給しながらプラズマ照射することによりシ
リコンナイトライドＳｉＮ膜を形成するＰ−ＳｉＮ膜の
形成方法に関する。
トライドＰ−ＳｉＮ膜の形成方法、特にモノシランＳｉ
Ｈ4 あるいはジクロールシランＳｉＨ2 Ｃｌ2 等シリコ
ンＳｉを含んだガスと、アンモニアＮＨ3 等窒素Ｎを含
んだガスを供給しながらプラズマ照射することによりシ
リコンナイトライドＳｉＮ膜を形成するＰ−ＳｉＮ膜の
形成方法に関する。
【０００２】
【従来の技術】半導体装置の製造において、ＳｉＮ膜を
形成する必要のある場合が多くなっている。そして、従
来においては普通のＣＶＤ法によってＳｉＮ膜の形成が
行われていたが、スループットの向上を図る必要がある
ため、成長速度を著しく高めることのできるプラズマＣ
ＶＤ法によりＳｉＮ膜の形成が行われるようになってき
ている。このようにプラズマＣＶＤ法により形成される
ＳｉＮ膜を特にプラズマシリコンナイトライドＰ−Ｓｉ
Ｎ膜という。
形成する必要のある場合が多くなっている。そして、従
来においては普通のＣＶＤ法によってＳｉＮ膜の形成が
行われていたが、スループットの向上を図る必要がある
ため、成長速度を著しく高めることのできるプラズマＣ
ＶＤ法によりＳｉＮ膜の形成が行われるようになってき
ている。このようにプラズマＣＶＤ法により形成される
ＳｉＮ膜を特にプラズマシリコンナイトライドＰ−Ｓｉ
Ｎ膜という。
【０００３】そして、Ｐ−ＳｉＮ膜の形成は、モノシラ
ンＳｉＨ4 あるいはジクロールシランＳｉＨ2 Ｃｌ2 等
Ｓｉを含んだガスと、アンモニアＮＨ3 、窒素ガスＮ2
等Ｎを含んだガスを供給しながらプラズマ照射すること
により行われた。
ンＳｉＨ4 あるいはジクロールシランＳｉＨ2 Ｃｌ2 等
Ｓｉを含んだガスと、アンモニアＮＨ3 、窒素ガスＮ2
等Ｎを含んだガスを供給しながらプラズマ照射すること
により行われた。
【０００４】
【発明が解決しようとする課題】ところで、上記した従
来のＰ−ＳｉＮ膜の形成方法によれば、形成されたＰ−
ＳｉＮ膜の下地に対する密着性を充分に高めることが難
しく、剥れ易いという問題があった。その原因は、Ｓｉ
Ｈ4 やＳｉＨ2 Ｃｌ2 が解離し易いので、Ｐ−ＳｉＮ膜
の形成当初においてＳｉＨ4 あるいはＳｉＨ2 Ｃｌ2 の
分解が先に起ってアモルファスシリコンａ−Ｓｉ膜が先
ず形成され、その後、そのうえにＰ−ＳｉＮ膜が成長す
るので、下地（例えばシリコン半導体基板あるいはＢＰ
ＳＧ膜、ＰＳＧ膜等シリコン化合物）とＰ−ＳｉＮ膜と
の間にａ−Ｓｉ膜が介在し、そして、そのａ−Ｓｉ膜が
ポーラスであることにある。
来のＰ−ＳｉＮ膜の形成方法によれば、形成されたＰ−
ＳｉＮ膜の下地に対する密着性を充分に高めることが難
しく、剥れ易いという問題があった。その原因は、Ｓｉ
Ｈ4 やＳｉＨ2 Ｃｌ2 が解離し易いので、Ｐ−ＳｉＮ膜
の形成当初においてＳｉＨ4 あるいはＳｉＨ2 Ｃｌ2 の
分解が先に起ってアモルファスシリコンａ−Ｓｉ膜が先
ず形成され、その後、そのうえにＰ−ＳｉＮ膜が成長す
るので、下地（例えばシリコン半導体基板あるいはＢＰ
ＳＧ膜、ＰＳＧ膜等シリコン化合物）とＰ−ＳｉＮ膜と
の間にａ−Ｓｉ膜が介在し、そして、そのａ−Ｓｉ膜が
ポーラスであることにある。
【０００５】図２（Ａ）乃至（Ｃ）は従来における問題
点であるａ−Ｓｉ膜の形成過程を順に示す断面図であ
る。本例ではＳｉを含んだガスとしてＳｉＨ4 を、Ｎを
含んだガスとしてＮＨ3 ＋Ｎ2 を用いている。プラズマ
ＣＶＤを開始すると、先ず図２（Ａ）に示すようにＳｉ
Ｈ4 が分解してＳｉＨ2 になりこれが更に分解して下
地、例えばシリコン基板１上にＳｉ粒子２が付着する。
このように先ずＳｉ粒子２の付着が始まるのは、ＳｉＨ
4 の方がＮＨ3 やＮ2 よりも解離し易いからである。そ
して、この状態が若干続いて基板１表面に付着したＳｉ
粒子２が層を成して図２（Ｂ）に示すように薄いａ−Ｓ
ｉ膜３が形成される。
点であるａ−Ｓｉ膜の形成過程を順に示す断面図であ
る。本例ではＳｉを含んだガスとしてＳｉＨ4 を、Ｎを
含んだガスとしてＮＨ3 ＋Ｎ2 を用いている。プラズマ
ＣＶＤを開始すると、先ず図２（Ａ）に示すようにＳｉ
Ｈ4 が分解してＳｉＨ2 になりこれが更に分解して下
地、例えばシリコン基板１上にＳｉ粒子２が付着する。
このように先ずＳｉ粒子２の付着が始まるのは、ＳｉＨ
4 の方がＮＨ3 やＮ2 よりも解離し易いからである。そ
して、この状態が若干続いて基板１表面に付着したＳｉ
粒子２が層を成して図２（Ｂ）に示すように薄いａ−Ｓ
ｉ膜３が形成される。
【０００６】そして、更にプラズマ照射が続くとＮＨ3
やＮ2 が解離し始めて図２（Ｃ）に示すようにＰ−Ｓｉ
Ｎ膜４が成されるのである。そして、下地１とＰ−Ｓｉ
Ｎ膜４との間に介在してしまうａ−Ｓｉ膜３は非常にポ
ーラスな膜質を有するので、Ｐ−ＳｉＮ膜４の下地１に
対する密着性が低くなり、剥れ易くなってしまうのであ
る。そこで、Ｐ−ＳｉＮ膜の開始当初におけるａ−Ｓｉ
膜３の生成をできるだけ抑制するためにプラズマ照射し
ながら先ずＮリッチなＰ−ＳｉＮ膜を形成するようにＳ
ｉＨ4 あるいはＳｉＨ2 Ｃｌ2 と、ＮＨ3 を供給し、そ
の後、プラズマ照射を一旦停止してＳｉＨ4 あるいはＳ
ｉＨ2 Ｃｌ2 の供給量を本来のＰ−ＳｉＮ膜を得るのに
好適な値に整え（セットフローし）、しかる後プラズマ
照射を再開して本来のＰ−ＳｉＮ膜の成長を行うという
方法も行われているが、密着性を充分に高めることが難
しかった。
やＮ2 が解離し始めて図２（Ｃ）に示すようにＰ−Ｓｉ
Ｎ膜４が成されるのである。そして、下地１とＰ−Ｓｉ
Ｎ膜４との間に介在してしまうａ−Ｓｉ膜３は非常にポ
ーラスな膜質を有するので、Ｐ−ＳｉＮ膜４の下地１に
対する密着性が低くなり、剥れ易くなってしまうのであ
る。そこで、Ｐ−ＳｉＮ膜の開始当初におけるａ−Ｓｉ
膜３の生成をできるだけ抑制するためにプラズマ照射し
ながら先ずＮリッチなＰ−ＳｉＮ膜を形成するようにＳ
ｉＨ4 あるいはＳｉＨ2 Ｃｌ2 と、ＮＨ3 を供給し、そ
の後、プラズマ照射を一旦停止してＳｉＨ4 あるいはＳ
ｉＨ2 Ｃｌ2 の供給量を本来のＰ−ＳｉＮ膜を得るのに
好適な値に整え（セットフローし）、しかる後プラズマ
照射を再開して本来のＰ−ＳｉＮ膜の成長を行うという
方法も行われているが、密着性を充分に高めることが難
しかった。
【０００７】というのは、どんなにＮリッチなＰ−Ｓｉ
Ｎ膜を最初に形成してもＳｉＨ4 等Ｓｉを含んだガスの
解離によってやはりａ−Ｓｉ膜が若干形成されてしまう
うえに、最初にＮリッチなＰ−ＳｉＮ膜ができてもその
後一旦プラズマ照射を停止してセットフローを行い、そ
の後プラズマ照射によりＮリッチでないＰ−ＳｉＮ膜の
形成を行うので、プラズマ照射の中断の前後でＰ−Ｓｉ
Ｎ膜が恰も独立したかのように生成され、ＮリッチのＰ
−ＳｉＮ膜とＮリッチでないＰ−ＳｉＮ膜との間の密着
性がさほど高くならないからである。
Ｎ膜を最初に形成してもＳｉＨ4 等Ｓｉを含んだガスの
解離によってやはりａ−Ｓｉ膜が若干形成されてしまう
うえに、最初にＮリッチなＰ−ＳｉＮ膜ができてもその
後一旦プラズマ照射を停止してセットフローを行い、そ
の後プラズマ照射によりＮリッチでないＰ−ＳｉＮ膜の
形成を行うので、プラズマ照射の中断の前後でＰ−Ｓｉ
Ｎ膜が恰も独立したかのように生成され、ＮリッチのＰ
−ＳｉＮ膜とＮリッチでないＰ−ＳｉＮ膜との間の密着
性がさほど高くならないからである。
【０００８】本発明はこのような問題点を解決すべく為
されたものであり、下地との密着性が高く、従って剥れ
にくく且つ耐衝撃性の強いＰ−ＳｉＮ膜を形成できるよ
うにすることを目的とする。
されたものであり、下地との密着性が高く、従って剥れ
にくく且つ耐衝撃性の強いＰ−ＳｉＮ膜を形成できるよ
うにすることを目的とする。
【０００９】
【課題を解決するための手段】本発明Ｐ−ＳｉＮ膜の形
成方法は、プラズマ照射しながら先ずＮを含んだガスの
みを供給してＮリッチなＳｉＮ膜を形成し、その後、Ｓ
ｉを含んだガスも供給してＳｉＮ膜の形成を続けること
を特徴とする。
成方法は、プラズマ照射しながら先ずＮを含んだガスの
みを供給してＮリッチなＳｉＮ膜を形成し、その後、Ｓ
ｉを含んだガスも供給してＳｉＮ膜の形成を続けること
を特徴とする。
【００１０】
【作用】本発明Ｐ−ＳｉＮ膜の形成方法によれば、最初
にＮを含んだガスのみを供給するので、下地表面は窒化
される。従って、下地の表面にａ−Ｓｉ膜が生成されて
しまう虞れが全くなくなる。そして、プラズマ照射を中
断することなくＳｉＨ4の供給も開始してＰ−ＳｉＮ膜
を形成するので、Ｓｉ含有率が高くなるもそれは徐々に
であってＳｉＨ4 の供給開始の前後で成長するＰ−Ｓｉ
Ｎ膜に独立性がなく互いに一体化し、その間にははっき
りした断層が生じない。従って、Ｐ−ＳｉＮ膜の下地と
の密着性の向上を図り剥れにくくすることができる。
にＮを含んだガスのみを供給するので、下地表面は窒化
される。従って、下地の表面にａ−Ｓｉ膜が生成されて
しまう虞れが全くなくなる。そして、プラズマ照射を中
断することなくＳｉＨ4の供給も開始してＰ−ＳｉＮ膜
を形成するので、Ｓｉ含有率が高くなるもそれは徐々に
であってＳｉＨ4 の供給開始の前後で成長するＰ−Ｓｉ
Ｎ膜に独立性がなく互いに一体化し、その間にははっき
りした断層が生じない。従って、Ｐ−ＳｉＮ膜の下地と
の密着性の向上を図り剥れにくくすることができる。
【００１１】
【実施例】以下、本発明Ｐ−ＳｉＮ膜の形成方法を図示
実施例に従って詳細に説明する。図１（Ａ）乃至（Ｄ）
は本発明Ｐ−ＳｉＮ膜の形成方法の一つの実施例を順に
説明する断面図である。先ず、図１（Ａ）に示すように
反応室内にガスとしてＮＨ3 ＋Ｎ2 を供給しながらプラ
ズマ流５を生ぜしめる。このときＳｉＨ4 あるいはＳｉ
Ｈ2 Ｃｌ2 の如きＳｉを含んだガスの供給は行わない。
実施例に従って詳細に説明する。図１（Ａ）乃至（Ｄ）
は本発明Ｐ−ＳｉＮ膜の形成方法の一つの実施例を順に
説明する断面図である。先ず、図１（Ａ）に示すように
反応室内にガスとしてＮＨ3 ＋Ｎ2 を供給しながらプラ
ズマ流５を生ぜしめる。このときＳｉＨ4 あるいはＳｉ
Ｈ2 Ｃｌ2 の如きＳｉを含んだガスの供給は行わない。
【００１２】反応ガスとしてＳｉを含んだガスの供給を
行わないでＮを含んだガスの供給のみを行うので、シリ
コン基板等の下地１の表面には図１（Ａ）に示すように
ＮリッチなＳｉＮ粒子６、６、…が出来る。そして、そ
れが図１（Ｂ）のように層７を成す。即ちＮリッチなＳ
ｉＮ膜７が形成される。従って、従来のようにａ−Ｓｉ
膜が形成されてしまうことはない。このＳｉを含んだガ
スの供給を行う状態でのプラズマＣＶＤは、例えば２〜
３秒間程度行えば良い。というのは、２〜３秒間で２０
〜３０ の厚さのＮリッチなＳｉＮ膜７が生じ、その程
度の厚さのＳｉＮ膜７が形成されれば最初にａ−Ｓｉ膜
が形成されてしまうことを回避することができるからで
ある。
行わないでＮを含んだガスの供給のみを行うので、シリ
コン基板等の下地１の表面には図１（Ａ）に示すように
ＮリッチなＳｉＮ粒子６、６、…が出来る。そして、そ
れが図１（Ｂ）のように層７を成す。即ちＮリッチなＳ
ｉＮ膜７が形成される。従って、従来のようにａ−Ｓｉ
膜が形成されてしまうことはない。このＳｉを含んだガ
スの供給を行う状態でのプラズマＣＶＤは、例えば２〜
３秒間程度行えば良い。というのは、２〜３秒間で２０
〜３０ の厚さのＮリッチなＳｉＮ膜７が生じ、その程
度の厚さのＳｉＮ膜７が形成されれば最初にａ−Ｓｉ膜
が形成されてしまうことを回避することができるからで
ある。
【００１３】その後、図１（Ｃ）に示すようにＳｉを含
んだガスであるＳｉＨ4 の供給も開始する。すると、図
１（Ｄ）に示すようにＰ−ＳｉＮ膜８が成長する。この
成長速度は１分当り１００００ であり、形成しようと
する厚さに応じた時間Ｐ−ＳｉＮ膜８の成長を行う。
んだガスであるＳｉＨ4 の供給も開始する。すると、図
１（Ｄ）に示すようにＰ−ＳｉＮ膜８が成長する。この
成長速度は１分当り１００００ であり、形成しようと
する厚さに応じた時間Ｐ−ＳｉＮ膜８の成長を行う。
【００１４】本Ｐ−ＳｉＮ膜の形成方法によれば、最初
にＮを含んだガスのみを供給するので、下地表面は窒化
される。従って、下地の表面にａ−Ｓｉ膜が生成されて
しまう虞れが全くなくなる。そして、プラズマ照射を中
断することなくＳｉＨ4 の供給も開始してＰ−ＳｉＮ膜
を形成するので、Ｓｉ含有率が高くなるもそれは徐々に
であってＳｉＨ4 の供給開始の前後で成長するＰ−Ｓｉ
Ｎ膜に独立性がなく互いに一体化し、その間にははっき
りした断層がない。従って、Ｐ−ＳｉＮ膜の下地との密
着性の向上を図り、剥れにくくし、且つ耐衝撃性を強め
ることができる。尚、図面ではＮｉリッチなＳｉＮ膜７
と普通のＳｉＮ膜８との間に恰もはっきりした断層があ
るかのように描かれたが、それは説明の便宜上ＳｉＨ4
供給前の膜７と供給後の膜８を観念的に明確に区別でき
るようにするためであって、このようにはっきりした断
層があるわけではない。
にＮを含んだガスのみを供給するので、下地表面は窒化
される。従って、下地の表面にａ−Ｓｉ膜が生成されて
しまう虞れが全くなくなる。そして、プラズマ照射を中
断することなくＳｉＨ4 の供給も開始してＰ−ＳｉＮ膜
を形成するので、Ｓｉ含有率が高くなるもそれは徐々に
であってＳｉＨ4 の供給開始の前後で成長するＰ−Ｓｉ
Ｎ膜に独立性がなく互いに一体化し、その間にははっき
りした断層がない。従って、Ｐ−ＳｉＮ膜の下地との密
着性の向上を図り、剥れにくくし、且つ耐衝撃性を強め
ることができる。尚、図面ではＮｉリッチなＳｉＮ膜７
と普通のＳｉＮ膜８との間に恰もはっきりした断層があ
るかのように描かれたが、それは説明の便宜上ＳｉＨ4
供給前の膜７と供給後の膜８を観念的に明確に区別でき
るようにするためであって、このようにはっきりした断
層があるわけではない。
【００１５】
【発明の効果】本発明Ｐ−ＳｉＮ膜の形成方法は、プラ
ズマ照射しながら先ずＮを含んだガスのみを供給してＮ
リッチなＳｉＮ膜を形成し、その後、シリコンを含んだ
ガスも供給してＳｉＮ膜の形成を続けることを特徴とす
るものである。従って、本発明Ｐ−ＳｉＮ膜の形成方法
によれば、最初にＮを含んだガスのみを供給するので、
下地表面は窒化される。依って、下地の表面にａ−Ｓｉ
膜が生成されてしまう虞れが全くなくなる。
ズマ照射しながら先ずＮを含んだガスのみを供給してＮ
リッチなＳｉＮ膜を形成し、その後、シリコンを含んだ
ガスも供給してＳｉＮ膜の形成を続けることを特徴とす
るものである。従って、本発明Ｐ−ＳｉＮ膜の形成方法
によれば、最初にＮを含んだガスのみを供給するので、
下地表面は窒化される。依って、下地の表面にａ−Ｓｉ
膜が生成されてしまう虞れが全くなくなる。
【００１６】そして、プラズマ照射を中断することなく
ＳｉＨ4 等のＳｉを含んだガスの供給も開始してＰ−Ｓ
ｉＮ膜を形成するので、シリコン含有率が徐々に高くな
るもＳｉＨ4 の供給開始の前後で成長するＰ−ＳｉＮ膜
に独立性がなく互いに一体化する。従って、Ｐ−ＳｉＮ
膜の下地との密着性の向上を図り、剥れにくくし且つ耐
衝撃性を強めることができる。
ＳｉＨ4 等のＳｉを含んだガスの供給も開始してＰ−Ｓ
ｉＮ膜を形成するので、シリコン含有率が徐々に高くな
るもＳｉＨ4 の供給開始の前後で成長するＰ−ＳｉＮ膜
に独立性がなく互いに一体化する。従って、Ｐ−ＳｉＮ
膜の下地との密着性の向上を図り、剥れにくくし且つ耐
衝撃性を強めることができる。
【図１】（Ａ）乃至（Ｄ）は本発明Ｐ−ＳｉＮ膜の一つ
の実施例を順に示す断面図である。
の実施例を順に示す断面図である。
【図２】（Ａ）乃至（Ｃ）は従来における問題点である
Ｐ−ＳｉＮ膜の形成過程を順に示す断面図である。
Ｐ−ＳｉＮ膜の形成過程を順に示す断面図である。
１ 下地 ５ プラズマ流 ７ ＮリッチなＰ−ＳｉＮ膜 ８ 普通のＰ−ＳｉＮ膜
Claims (1)
- 【請求項１】 シリコンを含んだガスと窒素を含んだガ
スを供給しながらプラズマ照射することによりシリコン
ナイトライド膜を形成するプラズマシリコンナイトライ
ド膜の形成方法において、 プラズマ照射しながら先ず窒素を含んだガスのみを供給
して窒素リッチなシリコンナイトライド膜を形成し、 その後、シリコンを含んだガスも供給してシリコンナイ
トライド膜の形成を続けることを特徴とするプラズマシ
リコンナイトライド膜の形成方法
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19702693A JPH0729836A (ja) | 1993-07-14 | 1993-07-14 | プラズマシリコンナイトライド膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19702693A JPH0729836A (ja) | 1993-07-14 | 1993-07-14 | プラズマシリコンナイトライド膜の形成方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0729836A true JPH0729836A (ja) | 1995-01-31 |
Family
ID=16367522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19702693A Pending JPH0729836A (ja) | 1993-07-14 | 1993-07-14 | プラズマシリコンナイトライド膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0729836A (ja) |
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