DE69419496T2 - Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers - Google Patents

Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers

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Publication number
DE69419496T2
DE69419496T2 DE1994619496 DE69419496T DE69419496T2 DE 69419496 T2 DE69419496 T2 DE 69419496T2 DE 1994619496 DE1994619496 DE 1994619496 DE 69419496 T DE69419496 T DE 69419496T DE 69419496 T2 DE69419496 T2 DE 69419496T2
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DE
Germany
Prior art keywords
plasma
observation
gate dielectric
induced potential
etcher
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Expired - Fee Related
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DE1994619496
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English (en)
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DE69419496D1 (de
Inventor
Pierre Maccagno
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STMicroelectronics SRL
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STMicroelectronics SRL
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Publication of DE69419496D1 publication Critical patent/DE69419496D1/de
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Publication of DE69419496T2 publication Critical patent/DE69419496T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
DE1994619496 1994-04-20 1994-04-20 Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers Expired - Fee Related DE69419496T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94830187A EP0678909B1 (de) 1994-04-20 1994-04-20 Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers

Publications (2)

Publication Number Publication Date
DE69419496D1 DE69419496D1 (de) 1999-08-19
DE69419496T2 true DE69419496T2 (de) 1999-10-28

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DE1994619496 Expired - Fee Related DE69419496T2 (de) 1994-04-20 1994-04-20 Beobachtung des RF-Plasmainduzierten Potentials auf einem Gatterdielektrikum innerhalb eines Plasmaätzers

Country Status (2)

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EP (1) EP0678909B1 (de)
DE (1) DE69419496T2 (de)

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