JP4597894B2 - 基板載置台および基板処理装置 - Google Patents
基板載置台および基板処理装置 Download PDFInfo
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- G—PHYSICS
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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Description
予め、高さ位置調整機構50により退避位置における昇降ピン30の位置調整を行っておく。具体的には、駆動機構により支持部材40を係止部材51に係止させた状態とし、調整ネジ54を調整して係止部材51を昇降させ、ダイヤルゲージ等を用いて昇降ピン30の先端の高さ位置がサセプタ本体4aの凸部5aの上面から70〜130μmになるように調整しておく。
ここでは、図7に示す平面位置にある3本の中央昇降ピン30b(No.1,No.2,No.3)を覆うように、短冊状のアモルファスシリコン基板を配置し、ピン先端の高さ位置を変えて(テスト1〜4)、下記の条件にてエッチング(アモルファスシリコンのエッチング)を行い、ピン痕の確認(目視)とエッチング段差(ピン挿通孔直上位置とピン周辺における段差)の測定を実施した。図7中、白丸は中央昇降ピンを示し、黒丸は周縁昇降ピンを示す。なお、短冊の周辺は、大部分がシリコンナイトライド膜にて覆われたガラス基板を設置した。また、ピン周辺とは中央昇降ピンの中心点から約30mm離れた位置である。
・エッチング条件
圧力:<6.7Pa
高周波パワー
プラズマ生成用高周波(13.56MHz)=18kW
バイアス生成用高周波(3.2MHz)=7.5kW
エッチングガス
Cl2/SF6=6000/427mL/min(sccm)
エッチング時間:20sec
結果を表1に示す。なお、表1中、目視でのピン痕評価の評価基準は、A:ピン痕は濃く視認可能、B:ピン痕は薄いが視認可能、C:面からはほとんど見えず、裏面からわずかに視認可能、D:ピン痕なし、とした。
例えば、上記実施形態では、下部電極に高周波電力を印加するRIEタイプの容量結合型平行平板プラズマエッチング装置における下部電極としてのサセプタに本発明の基板載置台を適用した例について示したが、これに限らず、アッシング、CVD成膜等の他のプラズマ処理装置に適用することができるし、上部電極に高周波電力を供給するタイプであっても、また容量結合型に限らず誘導結合型であってもよい。
2;チャンバー(処理容器)
4;サセプタ(基板載置台)
4a;サセプタ本体(載置台本体)
5;基材
5a;凸部
6;絶縁部材
7;スペーサ部材
11;シャワーヘッド(ガス供給手段)
20;排気装置
25a;高周波電源(プラズマ生成手段)
30;昇降ピン
30a;周縁昇降ピン
30b;中央昇降ピン
35;下部ピン
40;支持部材
44;ベローズ
50;高さ位置調整機構
G;ガラス基板
Claims (12)
- 基板に対してプラズマ処理を行うプラズマ処理装置の処理容器内において基板を載置する基板載置台であって、
載置台本体と、
前記載置台本体に対して鉛直に挿通され、前記載置台本体の表面に対して突没するように昇降自在に設けられ、その先端で基板を支持して昇降させる複数の昇降ピンと
を具備し、
前記昇降ピンは、少なくともその先端部が導電性であり、かつ、プラズマ処理の際に前記載置台本体内に退避する退避位置と、前記載置台本体から突出して基板を支持する支持位置とをとることが可能であり、前記退避位置にある時に、その先端の高さ位置が、基板の裏面から70〜130μm下方になるように調整されていることを特徴とする基板載置台。 - 前記昇降ピンは前記載置台本体と同電位であることを特徴とする請求項1に記載の基板載置台。
- 基板に対してプラズマ処理を行うプラズマ処理装置の処理容器内において基板を載置し、かつ下部電極として機能する基板載置台であって、
載置台本体と、
前記載置台本体に対して鉛直に挿通され、前記載置台本体の表面に対して突没するように昇降自在に設けられ、その先端で基板を支持して昇降させる複数の昇降ピンと
を具備し、
前記昇降ピンは、プラズマ処理の際に前記載置台本体内に退避する退避位置と、前記載置台本体から突出して基板を支持する支持位置とをとることが可能であり、かつ、基板の周縁部を支持する複数の第1昇降ピンと、基板の中心部を支持する1以上の第2昇降ピンとを有し、
前記第2昇降ピンは、少なくともその先端部が導電性であり、前記退避位置にある時に、その先端の高さ位置が、基板の裏面から70〜130μm下方になるように調整されていることを特徴とする基板載置台。 - 前記第2昇降ピンは前記載置台本体と同電位であることを特徴とする請求項3に記載の基板載置台。
- 前記第1昇降ピンと前記第2昇降ピンの昇降を独立に制御する制御部をさらに具備することを特徴とする請求項3または請求項4に記載の基板載置台。
- 載置される基板が絶縁性の基板であることを特徴とする請求項1から請求項5のいずれか1項に記載の基板載置台。
- 前記昇降ピンの高さ位置を調整する高さ位置調整機構をさらに具備することを特徴とする請求項1から請求項6のいずれか1項に記載の基板載置台。
- 前記載置台本体は、その表面に絶縁体からなる複数の凸部を有し、基板はこの凸部上に載置されることを特徴とする請求項1から請求項7のいずれか1項に記載の基板載置台。
- 前記載置台本体には、プラズマ生成のための高周波電力が供給されることを特徴とする請求項1から請求項8のいずれか1項に記載の基板載置台。
- 前記載置台本体は、前記処理容器の底壁との間に空間が形成されるように絶縁部材からなるスペーサを介して処理容器内に配置され、前記空間は大気雰囲気とされ、前記載置台本体は、前記空間を貫通するボルトにより前記処理容器の底壁に固定されていることを特徴とする請求項1から請求項9のいずれか1項に記載の基板載置台。
- 基板を収容する処理容器と、
前記処理容器内に設けられ、基板が載置される基板載置台と、
前記処理容器内に処理ガスを供給する処理ガス供給機構と、
前記処理容器内を排気する排気機構と、
前記処理室内に処理ガスのプラズマを生成するプラズマ生成機構と
を具備し、
基板に対してプラズマ処理を施すプラズマ処理装置であって、
前記基板載置台は請求項1から請求項8のいずれかの構成を有することを特徴とする基板処理装置。 - 前記プラズマ生成機構は、下部電極として機能する前記基板載置台と、基板載置台に対向して設けられた上部電極と、基板載置台に高周波電力を印加する高周波電源とを有することを特徴とする請求項11に記載の基板処理装置。
Priority Applications (6)
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JP2006096799A JP4597894B2 (ja) | 2006-03-31 | 2006-03-31 | 基板載置台および基板処理装置 |
KR1020070028843A KR100887459B1 (ko) | 2006-03-31 | 2007-03-23 | 기판 탑재대 및 플라즈마 처리 장치 |
CN200710089462A CN100587938C (zh) | 2006-03-31 | 2007-03-23 | 基板载置台和基板处理装置 |
CN2009102534464A CN101707186B (zh) | 2006-03-31 | 2007-03-23 | 基板载置台和基板处理装置 |
TW096111318A TWI427733B (zh) | 2006-03-31 | 2007-03-30 | A substrate stage and a substrate processing device |
KR1020080113188A KR100952525B1 (ko) | 2006-03-31 | 2008-11-14 | 기판 탑재대 및 플라즈마 처리 장치 |
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JP4597894B2 true JP4597894B2 (ja) | 2010-12-15 |
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KR (2) | KR100887459B1 (ja) |
CN (2) | CN100587938C (ja) |
TW (1) | TWI427733B (ja) |
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JP5302541B2 (ja) * | 2008-01-09 | 2013-10-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
CN101978473B (zh) * | 2008-03-20 | 2015-11-25 | 应用材料公司 | 具有滚轧成型表面的基座和制造所述基座的方法 |
JP2010084164A (ja) * | 2008-09-29 | 2010-04-15 | Epson Toyocom Corp | プラズマ処理装置 |
JP5356769B2 (ja) * | 2008-10-15 | 2013-12-04 | 東京エレクトロン株式会社 | 載置台 |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
CN103227086B (zh) * | 2012-01-31 | 2015-09-30 | 中微半导体设备(上海)有限公司 | 一种用于等离子体处理装置的载片台 |
JP5994090B2 (ja) * | 2012-02-29 | 2016-09-21 | 株式会社ブイ・テクノロジー | レーザ加工装置 |
KR101395288B1 (ko) * | 2012-05-21 | 2014-05-15 | 주성엔지니어링(주) | 박막 증착 장치 및 이를 이용한 박막 증착 방법 |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
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US11972924B2 (en) | 2022-06-08 | 2024-04-30 | Applied Materials, Inc. | Pulsed voltage source for plasma processing applications |
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