JP6797063B2 - ピン制御方法及び基板処理装置 - Google Patents
ピン制御方法及び基板処理装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 40
- 239000000758 substrate Substances 0.000 title claims description 36
- 238000005259 measurement Methods 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Description
図2は、図1に示す基板処理装置のステージSTを拡大して示す断面図である。図2に示すようにステージSTは、載置面PFを有している。この載置面PFは、第1の領域R1及び第2の領域R2を含んでいる。第1の領域R1は、ウエハWを載置するための領域である。一実施形態においては、第1の領域R1は、静電チャック50の上面によって画成されており、略円形の領域である。第1の領域R1は、ステージSTの載置面の一例である。第2の領域R2は、フォーカスリング18を載置するための領域であり、第1の領域R1を囲むよう環状に設けられている。一実施形態においては、第2の領域R2は、台14の周縁部分の上面によって画成されている。
v1=h1/t1 ・・・ (1)
h1´=h1+α・v1 ・・・ (2)
v2=(h1´‐h2)/α ・・・ (3)
v3=(h1´‐h3)/α=(h1´‐h2)/α=v2 ・・・ (4)
以上、一実施形態に係るピン制御方法及び基板処理装置について説明したが、実施形態はこれに限定されるものではない。以下では、他の実施形態について説明する。
12 処理容器
14 台
16 筒状保持部
17 筒状支持部
18 フォーカスリング
20 排気路
22 バッフル板
24 排気口
25 ガス導入口
26 排気装置
28 排気管
30 ゲートバルブ
32 高周波電源
34 整合器
35 高周波電源
36 整合器
38 シャワーヘッド
40 電極板
40h ガス通気孔
42 電極支持体
42a バッファ室
44 ガス供給部
46 ガス供給導管
48 磁場形成機構
50 静電チャック
52 電極
56 直流電源
58 ガス供給ライン
62 伝熱ガス供給部
66 制御部
70 ピン
72 駆動部
ST ステージ
SW スイッチ
W ウエハ
Claims (7)
- 基板を支持して複数の駆動部によってそれぞれ上下に駆動される複数のピンの高さ位置をそれぞれ測定し、
測定された前記複数のピンの高さ位置を用いて、前記複数のピンから、速度制御の基準となる基準ピンを選択し、
選択された前記基準ピンに関して、前記複数のピンの高さ位置が測定されてから所定時間が経過した後における高さ位置である基準高さ位置を推定し、
推定された前記基準高さ位置に前記基準ピン以外の他のピンの高さ位置を一致させるための調整速度を算出し、前記他のピンを駆動する駆動部を制御して、前記他のピンの駆動速度を前記調整速度に調整する
ことを特徴とするピン制御方法。 - 前記選択する処理は、測定された前記複数のピンの高さ位置が一致しない場合に、前記複数のピンのうち、高さ位置が最も低いピン又は最も高いピンを前記基準ピンとして選択することを特徴とする請求項1に記載のピン制御方法。
- 前記推定する処理は、前記複数の駆動部による前記複数のピンの駆動が開始されてから前記複数のピンの高さ位置が測定される測定タイミングまでの経過時間と、前記測定タイミングにおいて測定された前記基準ピンの高さ位置とに基づいて、前記測定タイミングにおける前記基準ピンの駆動速度を算出し、算出した前記基準ピンの駆動速度と、前記所定時間と、前記測定タイミングにおいて測定された前記基準ピンの高さ位置とに基づいて、前記基準高さ位置を推定することを特徴とする請求項1又は2に記載のピン制御方法。
- 前記測定する処理は、前記複数のピンの高さ位置が前回測定されてから前記所定時間が経過する度に、前記複数のピンの高さ位置をそれぞれ新たに測定し、
前記選択する処理、前記推定する処理及び前記調整する処理は、新たに測定される前記複数のピンの高さ位置が一致するまで、繰り返し実行されることを特徴とする請求項1に記載のピン制御方法。 - 前記調整する処理は、前記複数のピンの高さ位置が一致する場合に、前記他のピンを駆動する駆動部を制御して、前記他のピンの駆動速度を前記基準ピンの駆動速度に調整することを特徴とする請求項4に記載のピン制御方法。
- 前記複数のピンの高さ位置は、前記基板の載置台の載置面又は当該載置面から所定の距離だけ下方の基準面を基準とした前記複数のピンの先端の位置であることを特徴とする請求項1〜5のいずれか一つに記載のピン制御方法。
- 処理容器と、
前記処理容器内に設けられ、基板が載置される載置台と、
前記載置台の載置面から突没自在に前記載置台に設けられて前記基板の受け渡しを行う複数のピンと、
前記複数のピンをそれぞれ上下に駆動する複数の駆動部と、
前記複数のピンの高さ位置をそれぞれ測定する複数の測定器と、
前記基板を支持して前記複数の駆動部によってそれぞれ上下に駆動される前記複数のピンの高さ位置をそれぞれ測定し、測定された前記複数のピンの高さ位置を用いて、前記複数のピンから、速度制御の基準となる基準ピンを選択し、選択された前記基準ピンに関して、前記複数のピンの高さ位置が測定されてから所定時間が経過した後における高さ位置である基準高さ位置を推定し、推定された前記基準高さ位置に前記基準ピン以外の他のピンの高さ位置を一致させるための調整速度を算出し、前記他のピンを駆動する駆動部を制御して、前記他のピンの駆動速度を前記調整速度に調整する制御部と
を有することを特徴とする基板処理装置。
Priority Applications (6)
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JP2017080697A JP6797063B2 (ja) | 2017-04-14 | 2017-04-14 | ピン制御方法及び基板処理装置 |
TW107111611A TWI752209B (zh) | 2017-04-14 | 2018-04-02 | 接腳控制方法及基板處理裝置 |
US15/951,583 US10438834B2 (en) | 2017-04-14 | 2018-04-12 | Pin control method |
KR1020180043074A KR102456285B1 (ko) | 2017-04-14 | 2018-04-13 | 핀 제어 방법 및 기판 처리 장치 |
CN201810329959.8A CN108735654B (zh) | 2017-04-14 | 2018-04-13 | 销控制方法和基板处理装置 |
US16/427,874 US10910251B2 (en) | 2017-04-14 | 2019-05-31 | Pin control method and substrate processing apparatus |
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JP2017080697A JP6797063B2 (ja) | 2017-04-14 | 2017-04-14 | ピン制御方法及び基板処理装置 |
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JP6797063B2 true JP6797063B2 (ja) | 2020-12-09 |
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JP (1) | JP6797063B2 (ja) |
KR (1) | KR102456285B1 (ja) |
CN (1) | CN108735654B (ja) |
TW (1) | TWI752209B (ja) |
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CN206573826U (zh) * | 2017-03-23 | 2017-10-20 | 惠科股份有限公司 | 一种顶升装置及配向紫外线照射机 |
KR102089474B1 (ko) * | 2017-12-28 | 2020-03-17 | 주식회사 고영테크놀러지 | 기판에 삽입된 복수의 핀의 삽입 상태를 검사하는 방법 및 기판 검사 장치 |
KR20210086748A (ko) * | 2019-12-30 | 2021-07-09 | 세메스 주식회사 | 기판 리프팅 방법 및 기판 처리 장치 |
KR102582696B1 (ko) * | 2020-06-15 | 2023-09-26 | 세메스 주식회사 | 기판 처리 장치, 리프트 핀 높이 편차 측정 방법 및 컴퓨터 판독 가능한 처리 프로그램을 기록한 기록 매체 |
CN111900118B (zh) * | 2020-06-19 | 2023-04-07 | 中国科学院微电子研究所 | 晶圆转移机构、半导体制造设备以及晶圆转移方法 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4790258A (en) * | 1987-04-03 | 1988-12-13 | Tegal Corporation | Magnetically coupled wafer lift pins |
US5065495A (en) * | 1987-06-10 | 1991-11-19 | Tokyo Electron Limited | Method for holding a plate-like member |
JP3667038B2 (ja) * | 1997-06-23 | 2005-07-06 | 東京エレクトロン株式会社 | Cvd成膜方法 |
TW490756B (en) * | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
US6958098B2 (en) * | 2000-02-28 | 2005-10-25 | Applied Materials, Inc. | Semiconductor wafer support lift-pin assembly |
JP4243937B2 (ja) * | 2001-11-02 | 2009-03-25 | 東京エレクトロン株式会社 | 基板支持ピンの支持位置検知方法、その傾き検知方法及びそれらの教示装置並びに教示用治具 |
JP3967253B2 (ja) * | 2002-11-08 | 2007-08-29 | 東京エレクトロン株式会社 | 多孔質絶縁膜の形成方法及び多孔質絶縁膜の形成装置 |
KR20070091332A (ko) * | 2005-01-18 | 2007-09-10 | 에이에스엠 아메리카, 인코포레이티드 | 웨이퍼 지지핀 어셈블리 |
JP2006237262A (ja) | 2005-02-24 | 2006-09-07 | Tokyo Electron Ltd | 加熱処理装置 |
JP4841873B2 (ja) * | 2005-06-23 | 2011-12-21 | 大日本スクリーン製造株式会社 | 熱処理用サセプタおよび熱処理装置 |
JP2007242850A (ja) * | 2006-03-08 | 2007-09-20 | Nec Corp | 半導体製造装置及び半導体製造方法 |
JP4597894B2 (ja) * | 2006-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
JP4799325B2 (ja) * | 2006-09-05 | 2011-10-26 | 東京エレクトロン株式会社 | 基板受け渡し装置,基板処理装置,基板受け渡し方法 |
JP2009004545A (ja) * | 2007-06-21 | 2009-01-08 | Dainippon Screen Mfg Co Ltd | 基板載置装置および基板処理装置 |
JP2009168860A (ja) * | 2008-01-10 | 2009-07-30 | Olympus Corp | 基板用ステージ装置 |
JP5008147B2 (ja) | 2008-06-05 | 2012-08-22 | 東京エレクトロン株式会社 | 減圧乾燥装置 |
KR101135355B1 (ko) * | 2008-12-12 | 2012-04-16 | 엘아이지에이디피 주식회사 | 기판 리프트장치 |
KR101208644B1 (ko) * | 2009-07-03 | 2012-12-06 | 도쿄엘렉트론가부시키가이샤 | 위치 이탈 방지 장치, 이를 구비한 기판 보지구, 기판 반송 장치 및 기판 반송 방법 |
JP5650935B2 (ja) | 2009-08-07 | 2015-01-07 | 東京エレクトロン株式会社 | 基板処理装置及び位置決め方法並びにフォーカスリング配置方法 |
JP5141707B2 (ja) * | 2010-03-24 | 2013-02-13 | 株式会社安川電機 | 被処理体の支持機構、支持方法およびそれを備えた搬送システム |
US8840754B2 (en) * | 2010-09-17 | 2014-09-23 | Lam Research Corporation | Polar regions for electrostatic de-chucking with lift pins |
JP2012238758A (ja) * | 2011-05-12 | 2012-12-06 | Sharp Corp | 基板載置装置および基板載置方法 |
JP5368514B2 (ja) * | 2011-06-30 | 2013-12-18 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN104956465B (zh) * | 2012-11-30 | 2018-05-29 | 株式会社尼康 | 搬送系统、曝光装置、搬送方法、曝光方法及器件制造方法、以及吸引装置 |
JP2014187314A (ja) * | 2013-03-25 | 2014-10-02 | Renesas Electronics Corp | 半導体装置の製造方法 |
WO2016081951A1 (en) * | 2014-11-23 | 2016-05-26 | M Cubed Technologies | Wafer pin chuck fabrication and repair |
CN106486411B (zh) * | 2015-09-01 | 2019-06-11 | 东京毅力科创株式会社 | 基板处理装置、升降销的位置检测、调节和异常检测方法 |
JP6817745B2 (ja) * | 2015-09-01 | 2021-01-20 | 東京エレクトロン株式会社 | 基板処理装置、リフトピンの高さ位置検知方法、リフトピンの高さ位置調節方法、及び、リフトピンの異常検出方法 |
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