JP6846384B2 - プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 - Google Patents
プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 23
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- 238000005259 measurement Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 description 25
- 238000001020 plasma etching Methods 0.000 description 8
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
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- 101001139126 Homo sapiens Krueppel-like factor 6 Proteins 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32743—Means for moving the material to be treated for introducing the material into processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
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- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Description
図5は、フォーカスリングの直流電位とエッチングレートとの関係の一例を示すグラフである。図5において、横軸は、フォーカスリングFRの直流電位を示しており、縦軸はエッチングレートを示している。図6は、バイアス高周波電力の電力レベルと下部電極へのバイアス高周波電力の供給により生じるフォーカスリングの直流電位との関係の一例を示すグラフである。
Claims (6)
- チャンバと、
下部電極を含み、前記チャンバ内に設けられた基板支持台と、
前記下部電極にバイアス高周波電力を供給するように構成された高周波電源と、
前記高周波電源を制御するように構成された制御部と、
を備え、
前記基板支持台上には、フォーカスリングが基板を囲むように搭載され、
前記制御部は、
前記バイアス高周波電力の電力レベルと前記下部電極への該バイアス高周波電力の供給により生じる前記フォーカスリングの直流電位との関係を規定するテーブル又は関数を用いて、前記フォーカスリングの直流電位の指定値に対応する前記バイアス高周波電力の電力レベルを特定し、
前記チャンバ内でのプラズマの生成中に、特定された前記電力レベルを有する前記バイアス高周波電力を前記下部電極に供給するように前記高周波電源を制御する、
プラズマ処理装置。 - 前記フォーカスリングの直流電位を表す測定値を取得するよう構成された測定回路を更に備え、
前記制御部は、前記チャンバ内でのプラズマの生成中に、前記指定値と前記測定値から決定される前記フォーカスリングの直流電位との間の差を減少させるよう前記バイアス高周波電力の電力レベルを調整する、
請求項1に記載のプラズマ処理装置。 - 前記フォーカスリングに選択的に接続されるように構成された直流電源を更に備える、請求項1又は2に記載のプラズマ処理装置。
- 前記プラズマ処理装置は、容量結合型のプラズマ処理装置である、請求項1〜3の何れか一項に記載のプラズマ処理装置。
- プラズマ処理装置の高周波電源を制御する方法であって、
バイアス高周波電力の電力レベルと基板支持台の下部電極への該バイアス高周波電力の供給により生じるフォーカスリングの直流電位との関係を規定するテーブル又は関数を用いて、前記フォーカスリングの直流電位の指定値に対応するバイアス高周波電力の電力レベルを特定する工程であり、前記基板支持台は前記プラズマ処理装置のチャンバ内に設けられており、前記フォーカスリングは該基板支持台上で基板を囲むように搭載される、該工程と、
前記チャンバ内でのプラズマの生成中に、特定された前記電力レベルを有するバイアス高周波電力を前記下部電極に供給するように前記高周波電源を制御する工程と、
を含む方法。 - 前記チャンバ内でのプラズマの生成中に、前記指定値と前記フォーカスリングの直流電位を表す測定値から決定される該フォーカスリングの該直流電位との間の差を減少させるよう、前記バイアス高周波電力の電力レベルを調整する工程を更に含む、請求項5に記載の方法。
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JP2018111973A JP6846384B2 (ja) | 2018-06-12 | 2018-06-12 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
US16/645,695 US11264208B2 (en) | 2018-06-12 | 2019-06-03 | Plasma processing apparatus and method for controlling radio-frequency power supply of plasma processing apparatus |
KR1020207007023A KR20210019399A (ko) | 2018-06-12 | 2019-06-03 | 플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법 |
CN201980004435.4A CN111095497A (zh) | 2018-06-12 | 2019-06-03 | 等离子体处理装置以及控制其高频电源的方法 |
PCT/JP2019/022024 WO2019239944A1 (ja) | 2018-06-12 | 2019-06-03 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
TW108119645A TWI814837B (zh) | 2018-06-12 | 2019-06-06 | 電漿處理裝置及電漿處理裝置的射頻電源之控制方法 |
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JP2019216164A JP2019216164A (ja) | 2019-12-19 |
JP2019216164A5 JP2019216164A5 (ja) | 2021-02-04 |
JP6846384B2 true JP6846384B2 (ja) | 2021-03-24 |
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KR (1) | KR20210019399A (ja) |
CN (1) | CN111095497A (ja) |
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CN112538619A (zh) * | 2020-11-05 | 2021-03-23 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | 一种射频电源的控制方法及装置 |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
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US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
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KR20210019399A (ko) | 2021-02-22 |
CN111095497A (zh) | 2020-05-01 |
WO2019239944A1 (ja) | 2019-12-19 |
US11264208B2 (en) | 2022-03-01 |
TW202013425A (zh) | 2020-04-01 |
JP2019216164A (ja) | 2019-12-19 |
TWI814837B (zh) | 2023-09-11 |
US20200266035A1 (en) | 2020-08-20 |
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