JP2019216164A - プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 - Google Patents
プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000005259 measurement Methods 0.000 claims description 31
- 238000005530 etching Methods 0.000 abstract description 24
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- 239000013626 chemical specie Substances 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
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- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
図5は、フォーカスリングの直流電位とエッチングレートとの関係の一例を示すグラフである。図5において、横軸は、フォーカスリングFRの直流電位を示しており、縦軸はエッチングレートを示している。図6は、バイアス高周波電力の電力レベルと下部電極へのバイアス高周波電力の供給により生じるフォーカスリングの直流電位との関係の一例を示すグラフである。
Claims (6)
- チャンバと、
下部電極を含み、前記チャンバ内に設けられた基板支持台と、
前記下部電極にバイアス高周波電力を供給するように構成された高周波電源と、
前記高周波電源を制御するように構成された制御部と、
を備え、
前記基板支持台上には、フォーカスリングが基板を囲むように搭載され、
前記制御部は、
前記バイアス高周波電力の電力レベルと前記下部電極への該バイアス高周波電力の供給により生じる前記フォーカスリングの直流電位との関係を規定するテーブル又は関数を用いて、前記フォーカスリングの直流電位の指定値に対応する前記バイアス高周波電力の電力レベルを特定し、
前記チャンバ内でのプラズマの生成中に、特定された前記電力レベルを有する前記バイアス高周波電力を前記下部電極に供給するように前記高周波電源を制御する、
プラズマ処理装置。 - 前記フォーカスリングの直流電位を表す測定値を取得するよう構成された測定回路を更に備え、
前記制御部は、前記チャンバ内でのプラズマの生成中に、前記指定値と前記測定値から決定される前記フォーカスリングの直流電位との間の差を減少させるよう前記バイアス高周波電力の電力レベルを調整する、
請求項1に記載のプラズマ処理装置。 - 前記フォーカスリングに選択的に接続されるように構成された直流電源を更に備える、請求項1又は2に記載のプラズマ処理装置。
- 前記プラズマ処理装置は、容量結合型のプラズマ処理装置である、請求項1〜3の何れか一項に記載のプラズマ処理装置。
- プラズマ処理装置の高周波電源を制御する方法であって、
バイアス高周波電力の電力レベルと基板支持台の下部電極への該バイアス高周波電力の供給により生じるフォーカスリングの直流電位との関係を規定するテーブル又は関数を用いて、前記フォーカスリングの直流電位の指定値に対応するバイアス高周波電力の電力レベルを特定する工程であり、前記基板支持台は前記プラズマ処理装置のチャンバ内に設けられており、前記フォーカスリングは該基板支持台上で基板を囲むように搭載される、該工程と、
前記チャンバ内でのプラズマの生成中に、特定された前記電力レベルを有するバイアス高周波電力を前記下部電極に供給するように前記高周波電源を制御する工程と、
を含む方法。 - 前記チャンバ内でのプラズマの生成中に、前記指定値と前記フォーカスリングの直流電位を表す測定値から決定される該フォーカスリングの該直流電位との間の差を減少させるよう、前記バイアス高周波電力の電力レベルを調整する工程を更に含む、請求項5に記載の方法。
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JP2018111973A JP6846384B2 (ja) | 2018-06-12 | 2018-06-12 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
KR1020207007023A KR20210019399A (ko) | 2018-06-12 | 2019-06-03 | 플라즈마 처리 장치 및 플라즈마 처리 장치의 고주파 전원을 제어하는 방법 |
PCT/JP2019/022024 WO2019239944A1 (ja) | 2018-06-12 | 2019-06-03 | プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法 |
US16/645,695 US11264208B2 (en) | 2018-06-12 | 2019-06-03 | Plasma processing apparatus and method for controlling radio-frequency power supply of plasma processing apparatus |
CN201980004435.4A CN111095497B (zh) | 2018-06-12 | 2019-06-03 | 等离子体处理装置以及控制其高频电源的方法 |
TW108119645A TWI814837B (zh) | 2018-06-12 | 2019-06-06 | 電漿處理裝置及電漿處理裝置的射頻電源之控制方法 |
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KR20220050789A (ko) | 2020-10-16 | 2022-04-25 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 시스템, 제어 방법 및 제어 프로그램 |
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WO2024070268A1 (ja) * | 2022-09-29 | 2024-04-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びエッチング方法 |
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KR20210019399A (ko) | 2021-02-22 |
JP6846384B2 (ja) | 2021-03-24 |
TW202013425A (zh) | 2020-04-01 |
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CN111095497B (zh) | 2024-05-07 |
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WO2019239944A1 (ja) | 2019-12-19 |
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US11264208B2 (en) | 2022-03-01 |
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