KR101347962B1 - 박막의 특성 향상을 위한 원자층 증착방법 - Google Patents

박막의 특성 향상을 위한 원자층 증착방법 Download PDF

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KR101347962B1
KR101347962B1 KR1020110133985A KR20110133985A KR101347962B1 KR 101347962 B1 KR101347962 B1 KR 101347962B1 KR 1020110133985 A KR1020110133985 A KR 1020110133985A KR 20110133985 A KR20110133985 A KR 20110133985A KR 101347962 B1 KR101347962 B1 KR 101347962B1
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atomic layer
thin film
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석장현
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주식회사 케이씨텍
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Abstract

박막의 품질 특성을 향상시킬 수 있는 원자층 증착방법 및 이를 위한 원자층 증착장치가 개시된다. 원자층 증착방법은, 기판에 전구체 가스와 반응 가스를 제공하고 제1 온도에서 박막을 증착하는 저온 단계 및 상기 1 사이클의 박막이 증착된 기판에 상기 전구체 가스와 상기 반응 가스를 제공하여 상기 제1 온도보다 높은 온도의 제2 온도에서 박막을 증착하는 고온 단계를 포함하여 구성된다. 여기서, 상기 저온 단계와 상기 고온 단계가 한 단계의 강화증착 사이클이 되며, 상기 강화증착 사이클이 다수회 반복 수행된다.

Description

박막의 특성 향상을 위한 원자층 증착방법{ATOMIC LAYER DEPOSITION METHOD OF IMPROVING FILM PROPERTIES}
본 발명은 원자층 증착공정에서 증착된 박막의 조밀도와 내식성을 증가시킬 수 있는 원자층 증착방법 및 이를 위한 원자층 증착장치를 제공하기 위한 것이다.
일반적으로, 반도체 기판이나 글라스 등의 기판 상에 소정 두께의 박막을 증착하는 방법으로는 스퍼터링(sputtering)과 같이 물리적인 충돌을 이용하는 물리 기상 증착법(physical vapor deposition, PVD)과, 화학반응을 이용하는 화학 기상 증착법(chemical vapor deposition, CVD) 등이 있다. 최근 반도체 소자의 디자인 룰(design rule)이 급격하게 미세해짐에 따라 미세 패턴의 박막이 요구되고 박막이 형성되는 영역의 단차 또한 매우 커졌다. 이러한 추세로 인해 원자층 두께의 미세 패턴을 매우 균일하게 형성할 수 있을 뿐만 아니라 스텝 커버리지(step coverage)가 우수한 원자층 증착방법(atomic layer deposition, ALD)의 사용이 증대되고 있다.
ALD는 기체 분자들 간의 화학반응을 이용한다는 점에 있어서 일반적인 화학 기상 증착방법과 유사하다. 하지만, 통상의 CVD가 복수의 기체 분자들을 동시에 챔버 내로 주입하여 발생된 반응 생성물을 기판에 증착하는 것과 달리, ALD는 하나의 소스 물질을 포함하는 가스를 챔버 내로 주입하여 가열된 기판에 화학흡착시키고 이후 다른 소스 물질을 포함하는 가스를 챔버에 주입함으로써 기판 표면에서 소스 물질 사이의 화학반응에 의한 생성물이 증착된다는 점에서 차이가 있다. 이러한 ALD는 스텝 커버리지 특성이 매우 우수하며 불순물 함유량이 낮은 순수한 박막 증착이 가능하다는 장점을 갖고 있어 현재 널리 각광받고 있다.
원자층 증착장치 중에서 스루풋(throughput)을 향상시키기 위해 복수 장의 기판에 대해 동시에 증착 공정이 수행되는 세미 배치 타입(semi-batch type) 원자층 증착장치는 서로 다른 종류의 증착가스가 분사되는 영역이 형성되고, 가스분사 유닛 또는 서셉터의 고속 회전에 의해 기판이 순차적으로 각 영역을 통과함에 따라 기판 표면에서의 화학 반응에 의해서 반응 생성물이 증착된다.
그러나 종래의 원자층 증착장치는 동일 공정(플라즈마 OR 열 공정) 및 일정 온도에서 증착함으로써 박막의 조밀성 및 내식성을 확보하는 데 있어 한계가 있다.
본 발명의 실시예들에 따르면 박막의 조밀성 및 내식성을 향상시킬 수 있는 원자층 증착방법 및 원자층 증착장치를 제공하기 위한 것이다.
상술한 본 발명의 실시예들에 따른 박막 특성 향상을 위한 원자층 증착방법은, 기판에 전구체 가스와 반응 가스를 제공하고 제1 온도에서 박막을 증착하는 저온 단계 및 상기 1 사이클의 박막이 증착된 기판에 상기 전구체 가스와 상기 반응 가스를 제공하여 상기 제1 온도보다 높은 온도의 제2 온도에서 박막을 증착하는 고온 단계를 포함하여 구성된다. 여기서, 상기 저온 단계와 상기 고온 단계가 한 단계의 강화증착 사이클이 되며, 상기 강화증착 사이클이 다수회 반복 수행된다.
일 측에 따르면, 상기 제1 온도는 원자층을 증착하기 위한 공정 온도이고, 상기 제2 온도는 상기 제1 온도보다 고온이다. 그리고 상기 강화증착 사이클은 상기 저온 단계와 상기 고온 단계가 순차적으로 수행된다.
한편, 상술한 본 발명의 다른 실시예들에 따른 박막 특성 향상을 위한 원자층 증착방법은, 기판에 전구체 가스와 반응 가스를 제공하고 제1 온도에서 플라즈마를 형성하여 박막 특성을 강화시키는 저온 단계 및 상기 1 사이클의 박막이 증착된 기판에 상기 전구체 가스와 상기 반응 가스를 제공하고 상기 제1 온도보다 높은 온도의 제2 온도에서 박막을 고온 강화시키는 고온 단계를 포함하여 구성된다. 여기서, 상기 저온 단계와 상기 고온 단계가 한 단계의 강화증착 사이클이 되며, 상기 강화증착 사이클이 다수회 반복 수행된다.
한편, 상술한 본 발명의 다른 실시예들에 따른 박막 특성 향상을 위한 원자층 증착장치는, 세미 배치 방식 원자층 증착장치가 사용되고, 다수의 기판을 수용하여 증착공정이 수행되는 공간을 제공하는 프로세스 챔버, 상기 프로세스 챔버 상부에 구비되어 상기 기판에 서로 다른 증착가스를 각각 제공하는 분사영역이 형성된 가스분사 유닛, 다수의 기판이 안착되어 회전하는 서셉터 및 상기 서셉터 하부에 구비되고, 제1 온도로 가열하는 저온 영역과, 상기 제1 온도보다 높은 온도로 가열하는 고온 영역으로 형성된 히터 모듈을 포함하여 구성된다.
일 측에 따르면, 상기 서셉터가 1회전하는 1사이클에 대해서 상기 저온 영역은 1/2 사이클에 형성되고, 나머지 1/2 사이클은 상기 고온 영역이 형성된다. 그리고 상기 히터 모듈은, 상기 저온 영역과 상기 고온 영역을 형성할 수 있도록 서로 다른 구조를 갖는 열선이 배치된다. 예를 들어, 상기 히터 모듈은, 상기 저온 영역과 상기 고온 영역에 서로 다른 발열량을 갖는 열선이 배치될 수 있다. 또는, 상기 히터 모듈은, 복수의 열선으로 구성되어 상기 열선에 선택적으로 전원을 인가할 수 있도록 형성되고, 상기 열선 중 발열량이 높은 열선에 전원에 인가되면 상기 고온 영역이 되고, 발열량이 낮은 열선에 전원이 인가되면 상기 저온 영역이 된다.
일 측에 따르면, 상기 저온 영역에는 상기 기판에 플라즈마를 제공하여 상기 기판에 형성된 박막을 강화시키는 플라즈마 제너레이터가 더 구비된다. 그리고 상기 플라즈마 제너레이터는 상기 저온 영역 전체에 플라즈마를 제공하거나, 상기 저온 영역 중 반응 가스가 제공되는 영역에서만 선택적으로 플라즈마를 제공하도록 구비된다.
이상에서 본 바와 같이, 본 발명의 실시예들에 따르면, 원자층 증착공정 중 저온 영역과 고온 영역을 동시에 배치하여 저온 및 고온 공정을 순차적으로 반복 진행함으로써 조밀도와 내식성이 우수한 박막을 구현할 수 있다
도 1은 본 발명의 일 실시예에 따른 원자층 증착장치의 구성을 설명하기 위한 단면도이다.
도 2는 도 1의 원자층 증착장치에서 본 발명의 일 실시예에 따른 원자층 증착방법을 설명하기 위한 모식도이다.
도 3 내지 도 5는 도 1의 원자층 증착장치에서 히터 모듈의 실시예들을 설명하기 위한 단면도들이다.
이하 첨부된 도면들을 참조하여 본 발명의 실시예들을 상세하게 설명하지만, 본 발명이 실시예에 의해 제한되거나 한정되는 것은 아니다. 본 발명을 설명함에 있어서, 공지된 기능 혹은 구성에 대해 구체적인 설명은 본 발명의 요지를 명료하게 하기 위하여 생략될 수 있다.
이하, 도 1 내지 도 5를 참조하여 본 발명의 일 실시예에 따른 박막의 특성을 향상시킬 수 있는 원자층 증착방법 및 원자층 증착장치(100)에 대해서 상세하게 설명한다. 참고적으로, 도 1은 본 발명의 일 실시예에 따른 원자층 증착장치의 구성을 설명하기 위한 단면도이다. 그리고 도 2는 도 1의 원자층 증착장치에서 본 발명의 일 실시예에 따른 원자층 증착방법을 설명하기 위한 모식도이다. 도 3 내지 도 5는 도 1의 원자층 증착장치에서 히터 모듈(104)의 실시예들을 설명하기 위한 단면도들이다.
도면을 참조하면, 원자층 증착장치(100)는 프로세스 챔버(101), 서셉터(102), 가스분사 모듈(103) 및 히터 모듈(104)을 포함하여 구성된다.
이하에서 설명하는 본 실시예에서는 스루풋(throughput) 및 품질을 향상시키기 위해서 복수의 기판(10)에 대해 동시에 증착이 수행되며 기판(10) 및 서셉터(102)에 대해 가스분사 모듈(103)이 평행하게 배치된 상태로 서셉터(102)가 회전함에 따라 가스분사 모듈(103)에서 제공되는 서로 다른 종류의 가스가 분사되는 영역을 통과하면서 기판(10)에 소정의 박막이 증착되는 형태의 세미 배치 타입(semi-batch type) 원자층 증착장치를 예로 들어 설명한다. 또한, 세미 배치 타입 원자층 증착장치에서 수행되는 원자층 증착공정을 예로 들어 설명한다.
본 실시예에서 증착 대상이 되는 기판(10)은 실리콘 웨이퍼(silicon wafer)일 수 있다. 그러나 기판(10)은 실리콘 웨이퍼(silicon wafer)에 한정되는 것은 아니며, LCD(liquid crystal display), PDP(plasma display panel)와 같은 평판 디스플레이 장치용으로 사용하는 글라스를 포함하는 투명 기판(10)일 수 있다.
한편, 원자층 증착장치(100)에서 프로세스 챔버(101), 가스분사 모듈(103) 및 히터 모듈(104) 등의 상세한 기술구성은 공지의 기술로부터 이해 가능하며 본 발명의 요지가 아니므로 자세한 설명 및 도시를 생략하고 주요 구성요소에 대해서만 간략하게 설명한다.
프로세스 챔버(101)는 다수의 기판(10)을 수용하여 증착공정이 수행되는 공간을 제공한다.
서셉터(102)는 프로세스 챔버(101) 내부에서 다수의 기판(10)이 안착되고, 소정 속도로 회전함에 따라 기판(10)이 공전한다. 예를 들어, 서셉터(102)는 6장의 기판이 안착된다. 그러나 본 발명이 이에 한정되는 것은 아니며, 서셉터(102)에 안착되는 기판(10)의 수는 실질적으로 다양하게 변경 가능하다.
프로세스 챔버(101) 상부에는 기판(10)에 서로 다른 복수의 증착가스를 제공하기 위한 가스분사 모듈(103)이 구비되고, 가스분사 모듈(103)은 각각의 증착가스가 제공되는 분사영역(130)으로 분할 형성된다. 여기서, 이하에서는, 설명의 편의를 위해 도 2에 도시한 바와 같이, 분사영역(130)을 제공되는 증착가스의 종류에 따라 구분한다.
여기서, 본 실시예에서 '증착가스'는 기판(10)에 박막을 증착하기 위해서 제공되는 적어도 1종 이상의 가스를 포함하며, 기판(10)에 형성하고자 하는 박막의 구성 물질을 포함하는 전구체 가스(precursor gas)), 상기 전구체 가스와 화학적으로 반응하는 반응 가스(reactance gas), 및 전구체 가스와 반응 가스를 퍼지 시키기 위한 퍼지 가스(purge gas)를 포함한다. 그리고 분사영역(130)은 전구체 가스가 제공되는 제1 소스 영역(S), 퍼지 가스가 제공되는 퍼지 영역(P) 및 반응 가스가 제공되는 제2 소스 영역(R)으로 구성된다. 여기서, 원자층 증착공정은 기판(10)에 전구체 가스, 퍼지 가스, 반응 가스 및 퍼지 가스가 제공되면 기판(10)에 단원자층이 형성되고, 이를 증착공정의 1사이클이라 한다. 즉, 기판(10)은 공전하면서 각각의 분사영역(130)을 순차적으로 통과함에 따라 기판(10)에 단원자층이 형성된다.
한편, 본 실시예에서는, 도 2에 도시한 바와 같이, 기판(10)이 1회전 하면, 전구체 가스, 퍼지 가스, 반응 가스, 퍼지 가스, 전구체 가스, 퍼지 가스, 반응 가스 및 퍼지 가스가 제공되며, 2번의 단원자층이 형성된다. 이하에서는 본 실시예에서 기판(10)의 1회전하는 것을 '강화증착 사이클'의 1 사이클이라 한다.
도 2에 도시한 바와 같이, 강화증착 사이클 중 전 1/2 사이클 동안에는 제1 온도에서 박막이 증착되는 저온 공정이 수행된다. 그리고 나머지 후반 사이클 동안에는 제1 온도보다 고온인 제2 온도에서 박막이 증착되는 고온 공정이 수행된다.
서셉터(102) 하부에는 히터 모듈(104)이 구비된다. 히터 모듈(104)은 상술한 바와 같이 프로세스 챔버(101) 내부에 저온 영역과 고온 영역을 형성할 수 있도록 발열부(140)가 배치되어 온도가 조절된다. 즉, 본 실시예에서는 분사영역(130) 및 서셉터(102)가 원형으로 형성되므로, 히터 모듈(104)은 원형으로 열선이 배치되어 형성되며, 저온 영역 및 고온 영역은 반원 형태로 배치된다. 그리고 발열부(140)는 다수의 열선으로 구성되며, 히터 모듈(104)을 따라 원형으로 배치되거나, 기판(10)에 대응되는 형상으로 복수의 영역이 형성되는 것도 가능하다.
일 예로, 도 3에 도시한 바와 같이, 히터 모듈(104)은 저온 영역과 고온 영역에 서로 다른 구조를 갖는 발열부(140)를 배치할 수 있다. 예를 들어, 저온 영역에는 단일 구조를 갖는 열선(141)이 배치되고, 고온 영역에는 상기 단일 구조 열선(141)에 비해 고온을 발열시키는 이중 구조 열선(142)이 배치된다.
또는, 도 4에 도시한 바와 같이, 히터 모듈(104)은 저온 영역과 고온 영역에 서로 다른 발열량을 갖는 발열부(140)를 배치할 수 있다. 예를 들어, 저온 영역에는 비교적 낮은 발열량을 갖는 열선(143)을 배치하고, 고온 영역에는 비교적 높은 발열량을 갖는 열선(144)을 배치하여, 낮은 발열량의 열선(143)에 전원이 인가되면 저온 영역이 형성되고, 높은 발열량의 열선(144)에 전원이 인가되면 고온 영역을 형성할 수 있다.
또는, 도 5에 도시한 바와 같이, 히터 모듈(104)은 전체 영역에 동일한 구조 및 발열량을 갖는 발열부(140)를 배치할 수 있다. 다만, 발열부(140)는 서로 다른 발열량을 갖는 열선들(145, 146)이 나란히 또는 인접하여 구비된 이중 구조로 형성되며, 히터 모듈(104)에서 선택된 영역에 선택적으로 발열량을 조절할 수 있도록 형성된다. 즉, 2개의 열선(145, 146) 중에서 발열량이 높은 열선(145)에 전원이 인가되면, 해당 부분은 고온 영역이 되고, 발열량이 낮은 열선(146)에 전원이 인가되면 해당 부분은 저온 영역이 된다. 그리고 히터 모듈(104)은 사용자의 선택에 따라 열선(145, 146)에 전원 인가 여부에 따라 저온 영역과 고온 영역을 변경하거나 선택할 수 있다. 또한, 히터 모듈(104)은 전체 영역에 열선(145, 146)이 구비되며 선택적으로 저온 영역과 고온 영역을 형성하고 변경할 수 있다.
그러나 본 발명이 도면에 의해 한정되는 것은 아니며, 히터 모듈(104) 및 발열부(140)의 형태와 구성은 실질적으로 다양하게 변경될 수 있다.
본 실시예에 따르면, 저온 영역에서 박막을 증착한 후 고온 영역에서 박막을 증착함으로써, 박막이 증착됨과 더불어, 증착된 박막이 조밀도가 강화된다. 상세하게는, 고온 영역에서는 증착된 박막이 열에 의해 강화되는 어닐링(annealing) 효과가 작용하여 박막의 조밀도가 증가되면서 강화된다. 더불어, 고온 영역에서 저온 영역으로 이동하여 공정이 진행되면 박막이 담금(quenching) 효과에 의해 다시 강화된다.
한편, 도면에 도시하지는 않았으나, 박막의 특성을 향상시키기 위해서 플라즈마를 제공하여 박막을 강화시키기 위한 플라즈마 제너레이터가 구비될 수 있다. 즉, 저온 영역에 플라즈마를 제공하여 박막의 특성을 보다 강화시킬 수 있다.
이러한 플라즈마 강화 공정의 경우, 저온 영역에서 박막이 형성되는 동안 플라즈마를 제공하여 박막을 강화시키고, 고온 영역에서는 상술한 실시예와 마찬가지로 열에 의해 박막이 강화된다. 여기서, 플라즈마는 저온 영역 전체, 즉, 분사영역(130) 중 저온 영역의 제1 소스 영역(S) 내지 퍼지 영역(P) 전체에 플라즈마가 제공될 수 있다. 또는 저온 영역의 분사영역(130) 중 제2 소스 영역(R)에서만 선택적으로 제공될 수 있다. 플라즈마 제너레이터에서 플라즈마를 제공하면, 플라즈마 상태로 여기된 전구체 가스 또는 반응 가스의 반응성이 높아져서 박막의 조밀도가 향상된다.
본 실시예에 따르면, 저온 영역에서는 플라즈마에 의해 박막이 강화되고, 고온 영역으로 이동하면 열에 의해 박막이 강화된다. 그리고 열에 의해 강화된 박막이 다시 저온 영역으로 이동함에 따라 상술한 실시예와 마찬가지로 고온에서 저온으로 이동함에 따른 담금 효과와 저온 영역에서 제공되는 플라즈마의 반응성에 의해 박막이 강화된다.
이상과 같이 본 발명에서는 구체적인 구성 요소 등과 같은 특정 사항들과 한정된 실시예 및 도면에 의해 설명되었으나 이는 본 발명의 보다 전반적인 이해를 돕기 위해서 제공된 것이다. 또한, 본 발명이 상술한 실시예들에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상적인 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 그러므로, 본 발명의 사상은 상술한 실시예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 특허청구범위와 균등하거나 등가적 변형이 있는 모든 것들은 본 발명 사상의 범주에 속한다고 할 것이다.
100: 원자층 증착장치
101: 프로세스 챔버
102: 서셉터
103: 가스분사 유닛
104: 히터 모듈
130: 분사영역
140: 열선

Claims (11)

  1. 원자층 증착방법에 있어서,
    기판에 전구체 가스와 반응 가스를 제공하고 제1 온도에서 박막을 증착하는 저온 단계; 및
    상기 1 사이클의 박막이 증착된 기판에 상기 전구체 가스와 상기 반응 가스를 제공하여 상기 제1 온도보다 높은 온도의 제2 온도에서 박막을 증착하는 고온 단계;
    상기 저온 단계와 상기 고온 단계가 한 단계의 강화증착 사이클이 되며, 상기 강화증착 사이클의 각각의 1/2사이클은 저온영역과 고온영역으로 구성되어, 상기 강화증착 사이클이 다수회 반복 수행되는 원자층 증착방법.
  2. 제1항에 있어서,
    상기 제1 온도는 원자층을 증착하기 위한 공정 온도이고, 상기 제2 온도는 상기 제1 온도보다 고온인 원자층 증착방법.
  3. 제1항에 있어서,
    상기 강화증착 사이클은 상기 저온 단계와 상기 고온 단계가 순차적으로 수행되는 원자층 증착방법.
  4. 원자층 증착방법에 있어서,
    기판에 전구체 가스와 반응 가스를 제공하고 제1 온도에서 플라즈마를 형성하여 박막 특성을 강화시키는 저온 단계; 및
    상기 1 사이클의 박막이 증착된 기판에 상기 전구체 가스와 상기 반응 가스를 제공하고 상기 제1 온도보다 높은 온도의 제2 온도에서 박막을 고온 강화시키는 고온 단계;
    를 포함하고,
    상기 저온 단계와 상기 고온 단계가 한 단계의 강화증착 사이클이 되며, 상기 강화증착 사이클의 각각의 1/2사이클은 저온영역과 고온영역으로 구성되어, 상기 강화증착 사이클이 다수회 반복 수행되는 원자층 증착방법.
  5. 세미 배치 방식 원자층 증착장치에 있어서,
    다수의 기판을 수용하여 증착공정이 수행되는 공간을 제공하는 프로세스 챔버;
    상기 프로세스 챔버 상부에 구비되어 상기 기판에 서로 다른 증착가스를 각각 제공하는 분사영역이 형성된 가스분사 유닛;
    다수의 기판이 안착되어 회전하는 서셉터; 및
    상기 서셉터 하부에 원형의 형태로 열선이 배치되며, 각각의 반원형태로 구성되는 저온 영역과 고온 영역으로 형성된 히터 모듈;
    을 포함하는 원자층 증착장치.
  6. 삭제
  7. 제5항에 있어서,
    상기 히터 모듈은, 상기 저온 영역과 상기 고온 영역을 형성할 수 있도록 서로 다른 구조를 갖는 열선이 배치된 원자층 증착장치.
  8. 제5항에 있어서,
    상기 히터 모듈은, 상기 저온 영역과 상기 고온 영역에 서로 다른 발열량을 갖는 열선이 배치된 원자층 증착장치.
  9. 제5항에 있어서,
    상기 히터 모듈은, 복수의 열선으로 구성되어 상기 열선에 선택적으로 전원을 인가할 수 있도록 형성되고,
    상기 열선 중 발열량이 높은 열선에 전원에 인가되면 상기 고온 영역이 되고, 발열량이 낮은 열선에 전원이 인가되면 상기 저온 영역이 되는 원자층 증착장치.
  10. 제5항에 있어서,
    상기 저온 영역에는 상기 기판에 플라즈마를 제공하여 상기 기판에 형성된 박막을 강화시키는 플라즈마 제너레이터가 더 구비되는 원자층 증착장치.
  11. 제10항에 있어서,
    상기 플라즈마 제너레이터는 상기 저온 영역 전체에 플라즈마를 제공하거나, 상기 저온 영역 중 반응 가스가 제공되는 영역에서만 선택적으로 플라즈마를 제공하도록 구비된 원자층 증착장치.
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