KR20130007806A - 원자층 증착장치의 히터 모듈 - Google Patents
원자층 증착장치의 히터 모듈 Download PDFInfo
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- KR20130007806A KR20130007806A KR1020110068365A KR20110068365A KR20130007806A KR 20130007806 A KR20130007806 A KR 20130007806A KR 1020110068365 A KR1020110068365 A KR 1020110068365A KR 20110068365 A KR20110068365 A KR 20110068365A KR 20130007806 A KR20130007806 A KR 20130007806A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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Abstract
기판의 온도를 일정하게 유지시킬 수 있는 원자층 증착장치의 히터 모듈이 개시된다. 원자층 증착장치에서 서셉터 하부에 구비되는 히터 모듈은, 서셉터를 향하는 상부측에 열선이 구비된 히터 블록, 상기 히터 블록에 삽입되어 상기 열선에서 방출되는 온도를 측정하는 온도측정부를 포함하여 구성된다. 여기서, 상기 온도측정부는 상기 열선에서 방출되는 복사열을 측정할 수 있도록 상기 히터 블록에 삽입된다.
Description
본 발명은 원자층 증착장치에서 히터 모듈의 온도를 정확하게 측정할 수 있는 히터 모듈 및 원자층 증착장치를 제공하기 위한 것이다.
일반적으로, 반도체 기판이나 글라스 등의 기판 상에 소정 두께의 박막을 증착하는 방법으로는 스퍼터링(sputtering)과 같이 물리적인 충돌을 이용하는 물리 기상 증착법(physical vapor deposition, PVD)과, 화학반응을 이용하는 화학 기상 증착법(chemical vapor deposition, CVD) 등이 있다. 최근 반도체 소자의 디자인 룰(design rule)이 급격하게 미세해짐에 따라 미세 패턴의 박막이 요구되고 박막이 형성되는 영역의 단차 또한 매우 커졌다. 이러한 추세로 인해 원자층 두께의 미세 패턴을 매우 균일하게 형성할 수 있을 뿐만 아니라 스텝 커버리지(step coverage)가 우수한 원자층 증착방법(atomic layer deposition, ALD)의 사용이 증대되고 있다.
ALD는 기체 분자들 간의 화학반응을 이용한다는 점에 있어서 일반적인 화학 기상 증착방법과 유사하다. 하지만, 통상의 CVD가 다수의 기체 분자들을 동시에 챔버 내로 주입하여 발생된 반응 생성물을 기판에 증착하는 것과 달리, ALD는 하나의 소스 물질을 포함하는 가스를 챔버 내로 주입하여 가열된 기판에 화학흡착시키고 이후 다른 소스 물질을 포함하는 가스를 챔버에 주입함으로써 기판 표면에서 소스 물질 사이의 화학반응에 의한 생성물이 증착된다는 점에서 차이가 있다. 이러한 ALD는 스텝 커버리지 특성이 매우 우수하며 불순물 함유량이 낮은 순수한 박막을 증착하는 것이 가능하다는 장점을 갖고 있어 현재 널리 사용되고 있다.
원자층 증착장치 중에서 스루풋(throughput)을 향상시키기 위해 다수 장의 기판에 대해 동시에 증착 공정이 수행되는 세미 배치 타입(semi-batch type)의 원자층 증착장치가 개시되어 있다. 통상적으로 세미 배치 타입의 원자층 증착장치는 서로 다른 종류의 증착가스가 분사되는 영역이 형성되고, 가스분사부 또는 서셉터가 고속으로 회전함에 따라 기판이 순차적으로 증착가스가 분사되는 각 영역을 통과함으로써 기판 표면에서 증착가스들이 화학반응이 발생하여 반응 생성물이 증착된다.
원자층 증착장치에서 서셉터 하부에는 기판을 가열하기 위한 히터가 구비된다. 한편, 기판의 온도는 박막의 품질에 영향을 미치는 중요한 원인 중 하나로, 기판의 온도를 정확하게 가열하고, 균일하게 유지시키는 것이 중요하다.
그런데, 종래의 원자층 증착장치는 히터가 서셉터와 이격된 위치에서 간접적으로 가열하는 방식을 사용하기 때문에 기판의 온도를 정확하게 측정하고 균일하게 유지하는 것이 어렵다. 또한, 기판의 로딩 및 언로딩을 위해서는 서셉터가 승강하고, 회전해야 하므로 기판의 온도를 일정하게 유지하는데 있어 매우 어렵다.
본 발명의 실시예들에 따르면 기판 및 서셉터의 온도를 정확하게 측정하고 유지할 수 있는 원자층 증착장치의 히터 모듈을 제공하기 위한 것이다.
상술한 본 발명의 실시예들에 따른 원자층 증착장치의 히터 모듈은, 서셉터를 향하는 상부측에 열선이 구비된 히터 블록, 상기 히터 블록에 삽입되어 상기 열선에서 방출되는 온도를 측정하는 온도측정부를 포함하고, 상기 온도측정부는 상기 열선에서 방출되는 복사열을 측정할 수 있도록 상기 히터 블록에 삽입된다.
일 측에 따르면, 상기 히터 블록의 상부면에는 요입부가 형성되어서 상기 열선이 상기 요입부 내부로 노출되도록 형성되고, 상기 온도측정부는 상기 요입부 내부를 관통하여 구비되어서 상기 요입부 내부에서 상기 열선에서 방출되는 복사열을 측정할 수 있다. 또한, 상기 요입부 및 상기 열선을 매립시키도록 충진되는 투명 재질의 충진부가 구비될 수 있다. 예를 들어, 상기 충진부는 투명 석영이 사용될 수 있다.
일 측에 따르면, 상기 온도측정부는 상기 열선이 구비된 위치 하부에 구비되고, 상기 열선과 상기 온도측정부 사이에 공간이 이격될 수 있다.
이상에서 본 바와 같이, 본 발명의 실시예들에 따르면, 히터 모듈의 온도를 정확하게 측정할 수 있으며, 전도를 통해서가 아니라 복사열을 측정함으로써 서셉터에 전달되는 온도를 정확하게 측정 및 제어할 수 있다. 또한, 증착 시 기판의 온도를 일정하게 유지함으로써 우수한 막질을 형성할 수 있다.
도 1은 본 발명의 일 실시예에 따른 원자층 증착장치의 단면도이다.
도 2는 도 1의 원자층 증착장치에서 히터 모듈의 단면도이다.
도 3은 도 2의 히터 모듈에 대한 변형 실시예를 도시한 단면도이다.
도 2는 도 1의 원자층 증착장치에서 히터 모듈의 단면도이다.
도 3은 도 2의 히터 모듈에 대한 변형 실시예를 도시한 단면도이다.
이하 첨부된 도면들을 참조하여 본 발명의 실시예들을 상세하게 설명하지만, 본 발명이 실시예에 의해 제한되거나 한정되는 것은 아니다. 본 발명을 설명함에 있어서, 공지된 기능 혹은 구성에 대해 구체적인 설명은 본 발명의 요지를 명료하게 하기 위하여 생략될 수 있다.
이하, 도 1 내지 도 3을 참조하여 본 발명의 일 실시예에 따른 원자층 증착장치(100) 및 히터 모듈(104)에 대해서 상세하게 설명한다.
원자층 증착장치(100)는 프로세스 챔버(101)와 서셉터(102), 가스분사부(103) 및 히터 모듈(104)을 포함하여 구성된다.
이하에서 설명하는 본 실시예에서는 스루풋(throughput) 및 품질을 향상시키기 위해서 복수의 기판(10)에 대해 동시에 증착이 수행되며 기판(10) 및 서셉터(102)에 대해 가스분사부(103)가 평행하게 배치된 상태로 서셉터(102)가 회전하면서 가스분사부(103)에서 제공되는 서로 다른 종류의 가스가 분사되는 영역을 통과함에 따라 소정의 박막이 증착되는 형태의 세미 배치 타입(semi-batch type)을 예로 들어 설명한다. 그러나 본 발명이 이에 한정되는 것은 아니며, 한 장의 기판이 수용되는 싱글 타입의 원자층 증착장치에 적용하는 것도 가능하다.
또한, 본 실시예에서 증착 대상이 되는 기판(10)은 실리콘 웨이퍼(silicon wafer)일 수 있다. 그러나 본 발명의 대상이 되는 기판(10)이 실리콘 웨이퍼에 한정되는 것은 아니며, 기판(10)은 LCD(liquid crystal display), PDP(plasma display panel)와 같은 평판 디스플레이 장치용으로 사용하는 글라스를 포함하는 투명 기판(10)일 수 있다. 또한, 기판(10)의 형상 및 크기가 도면에 의해 한정되는 것은 아니며, 원형 및 사각형 등 실질적으로 다양한 형상과 크기를 가질 수 있다.
한편, 원자층 증착장치(100)에서 프로세스 챔버(101), 가스분사부(103) 및 서셉터(102) 등의 상세한 기술구성은 공지의 기술로부터 이해 가능하며 본 발명의 요지가 아니므로 자세한 설명 및 도시를 생략하고 주요 구성요소에 대해서만 간략하게 설명한다.
서셉터(102)는 복수의 기판(10)이 안착된다. 서셉터(102)는 기판(10)의 로딩 및 언로딩을 위해서 프로세스 챔버(101) 내부에서 서셉터(102)가 상하 방향으로 승강 이동되고, 증착 공정 동안에는 소정 속도로 회전한다.
서셉터(102) 하부에는 히터 모듈(104)이 구비된다. 히터 모듈(104)은 열선(145)이 구비되는 히터 블록(141)과 히터 모듈(104)의 온도를 측정하여 제어하기 위한 온도측정부(thermocouple)(147)가 구비된다. 그리고 온도측정부(147)에서 측정된 온도를 이용하여 히터 모듈(104)의 동작을 제어하는 제어부(140)가 구비된다.
히터 블록(141)은 전원이 인가되면 열을 방출하는 열선(145)을 지지한다. 또한, 히터 블록(141)은 열선(145)에서 방출되는 열에 의해 히터 블록(141) 자체가 손상되는 것을 방지할 수 있도록 그라파이트(graphite)나 실리콘카바이드(SiC), 탄소/탄소 복합재(C/C composite), 및 그라파이트(graphite)와 실리콘카바이드(SiC)의 혼합재 중 어느 하나 이상의 재질을 이용하여 형성될 수 있다. 또한, 히터 블록(141)은 열선(145)에서 방출되는 열이 프로세스 챔버(101) 하부를 통해 외부에 영향을 미치는 것을 방지하는 역할을 한다.
열선(145)은 히터 모듈(104) 상부에 위치하는 기판(10)을 가열할 수 있도록 히터 블록(141)에서 상부측에 구비된다.
온도측정부(147)는 열선(145)에서 방출되는 열을 측정하고, 측정된 온도를 이용하여 히터 모듈(104)의 동작을 제어할 수 있도록 히터 블록(141)의 하부에서 삽입된 형태로 구비된다.
한편, 히터 모듈(104)은 서셉터(102)와 소정 간격 이격된 위치에서 기판(10)을 복사열에 의해 가열하므로, 온도측정부(147)는 열선(145)에서 방출되는 열을 측정할 때 복사에 의한 온도를 측정할 수 있도록 구비된다.
도 2에 도시한 바와 같이, 히터 블록(141)의 상부면에 소정 깊이의 요입부(144)가 형성된다. 요입부(144)는 열선(145)이 상기 요입부(144) 내부에 노출되는 크기 및 형상으로 형성된다. 그리고 온도측정부(147)는 요입부(144) 내부로 돌출되도록 삽입되어서 상기 요입부(144) 내부의 열선(145)에서 방출되는 복사열에 의한 온도를 측정한다.
요입부(144) 내부에는 열선(145) 및 온도측정부(147)를 지지하고, 열선(145)에서 방출되는 복사열이 온도측정부(147)에서 측정될 수 있도록 충진부(143)가 충진된다. 예를 들어, 충진부(143)는 투명한 재질의 석영으로 형성되며, 요입부(144) 및 열선(145)을 매립시키도록 충진된다.
한편, 상술한 실시예와는 달리, 히터 블록(241)에서 열선(245)에 인접한 위치에서 상기 열선(245)에서 방출되는 복사열에 의한 온도를 측정하도록 온도측정부(247)가 구비되는 것도 가능하다.
도 3을 참조하면, 열선(245)은 히터 블록(241) 내부에 구비되고, 온도측정부(247)는 열선(245)이 구비된 위치의 바로 하부에 구비된다. 여기서, 열선(245)과 온도측정부(247) 사이에는 소정의 간격이 이격되게 배치되므로, 상기 열선(245)과 상기 온도측정부(247)가 이격된 공간을 통해 열선(245)에서 방출되는 복사열에 의한 온도를 측정할 수 있다.
한편, 도 2와 도 3에서 미설명 도면부호 142, 242는 히터 블록(141, 242)에서 열선(145, 245)이 수용되는 열선 수용부(142, 242)이다.
본 실시예들에 따르면, 히터 모듈(104)의 구조변경 없이도 열선(145)에서 방출되는 복사열에 의한 온도를 측정할 수 있으므로, 기판(10) 및 서셉터(102)에 전달되는 온도를 비교적 정확하게 측정할 수 있다. 또한, 열선(145)에서 방출되는 온도를 정확하게 측정하고 이를 피드백(feedback)함으로써 우수한 막질을 형성할 수 있다.
이상과 같이 본 발명에서는 구체적인 구성 요소 등과 같은 특정 사항들과 한정된 실시예 및 도면에 의해 설명되었으나 이는 본 발명의 보다 전반적인 이해를 돕기 위해서 제공된 것이다. 또한, 본 발명이 상술한 실시예들에 한정되는 것은 아니며, 본 발명이 속하는 분야에서 통상적인 지식을 가진 자라면 이러한 기재로부터 다양한 수정 및 변형이 가능하다. 따라서, 본 발명의 사상은 상술한 실시예에 국한되어 정해져서는 아니 되며, 후술하는 특허청구범위뿐 아니라 특허청구범위와 균등하거나 등가적 변형이 있는 모든 것들은 본 발명 사상의 범주에 속한다고 할 것이다.
10: 기판
100: 원자층 증착장치
101: 프로세스 챔버
102: 서셉터
103: 가스분사부
104: 히터 모듈
140: 제어부
141: 히터 블록
142: 열선 수용부
143: 충진부
144: 요입부
145: 열선
147: 온도측정부(thermocouple)
100: 원자층 증착장치
101: 프로세스 챔버
102: 서셉터
103: 가스분사부
104: 히터 모듈
140: 제어부
141: 히터 블록
142: 열선 수용부
143: 충진부
144: 요입부
145: 열선
147: 온도측정부(thermocouple)
Claims (5)
- 원자층 증착장치에서 서셉터 하부에 구비되는 히터 모듈에 있어서,
서셉터를 향하는 상부측에 열선이 구비된 히터 블록;
상기 히터 블록에 삽입되어 상기 열선에서 방출되는 온도를 측정하는 온도측정부;
를 포함하고,
상기 온도측정부는 상기 열선에서 방출되는 복사열을 측정할 수 있도록 상기 히터 블록에 삽입되는 원자층 증착장치의 히터 모듈.
- 제1항에 있어서,
상기 히터 블록의 상부면에는 요입부가 형성되어서 상기 열선이 상기 요입부 내부로 노출되도록 형성되고,
상기 온도측정부는 상기 요입부 내부를 관통하는 원자층 증착장치의 히터 모듈.
- 제2항에 있어서,
상기 요입부 및 상기 열선을 매립시키도록 충진되는 투명 재질의 충진부가 구비되는 원자층 증착장치의 히터 모듈.
- 제3항에 있어서,
상기 충진부는 투명 석영이 사용되는 원자층 증착장치의 히터 모듈.
- 제1항에 있어서,
상기 온도측정부는 상기 열선이 구비된 위치 하부에 구비되고,
상기 열선과 상기 온도측정부 사이에 공간이 이격되는 원자층 증착장치의 히터 모듈.
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