CN105580127A - 加热构件及具有该加热构件的基板处理装置 - Google Patents

加热构件及具有该加热构件的基板处理装置 Download PDF

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CN105580127A
CN105580127A CN201480052215.6A CN201480052215A CN105580127A CN 105580127 A CN105580127 A CN 105580127A CN 201480052215 A CN201480052215 A CN 201480052215A CN 105580127 A CN105580127 A CN 105580127A
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hot line
substrate
inner space
heater
described hot
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CN105580127B (zh
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方弘柱
金尚年
申东和
金玟锡
梁真荣
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Kook Je Electric Korea Co Ltd
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Abstract

本发明涉及基板处理装置。本发明的基板处理装置包括：处理室，基板基座，设置在所述处理室，在该基板基座的同一平面上放置有多个基板，该基板基座与旋转轴连接来旋转，加热构件，位于所述基板基座的底面，以及喷射构件，在与放置于所述基板基座的多个基板分别对应的位置，对基板的整个处理面喷射气体；所述加热构件具有内部空间，在所述内部空间，用于对所述基板基座进行加热的多个热线，以所述基板基座的旋转轴为中心，在同心圆上水平和垂直地配置有多列。

Description

加热构件及具有该加热构件的基板处理装置
技术领域
本发明涉及基板处理装置，尤其涉及具有加热构件的基板处理装置。
背景技术
为了在制造半导体元件的沉积过程中改进沉积膜质的一致性(conformability)，而引入原子层沉积方式。原子层沉积方式是反复进行以原子层厚度沉积的单位反应循环(cycle)，来形成希望厚度的沉积层的过程，原子层沉积方式相对于化学气相沉积(CVD)或者溅射(sputter)方式，沉积速度非常慢，而且用于形成希望的厚度的膜所需要的时间长，导致生产率降低。
尤其，用于放置基板的基座的温度均匀度，是影响沉积在基板上的薄膜的厚度均匀度的最主要要素中的一个。但是，基座因基板数量增加和热损失，而产生边缘部温度降低的现象。此外，因处理气体侵入而产生加热器腐蚀，以及因氧化膜沉积而使加热器性能降低。
发明内容
技术问题
本发明的目的在于，提供一种加热构件及具有该加热构件的基板处理装置，所述加热构件能够提高温度均匀性。
此外，本发明的目的在于，提供一种加热构件及具有该加热构件的基板处理装置，所述加热构件能够防止因热线的热膨胀而产生的热线下垂和扭曲。
此外，本发明的目的在于，提供一种加热构件及具有该加热构件的基板处理装置，所述加热构件能够防止在进行处理时因处理气体而产生的热线的腐蚀。
本发明的目的不限于此，本领域技术人员可通过以下记载更加明确地理解没有提及的其他的目的。
用于解决技术问题的手段
根据本发明的一个侧面，提供一种基板处理装置，包括：处理室，基板基座，设置在所述处理室，在该基板基座的同一平面上放置有多个基板，该基板基座与旋转轴连接来旋转，加热构件，位于所述基板基座的底面，以及喷射构件，在与放置于所述基板基座的多个基板分别对应的位置，对基板的整个处理面喷射气体；所述加热构件具有内部空间，在所述内部空间，用于对所述基板基座进行加热的多个热线，以所述基板基座的旋转轴为中心，在同心圆上水平和垂直地配置有多列。
另外，为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述加热构件还包括用于支撑所述热线的多个热线支撑件。
另外，为了确保所述热线的热膨胀后的流动性，所述热线支撑件包括沿着与所述热线的长度方向正交的方向形成的凹陷的支撑面。
另外，所述热线支撑件包括：支承块；棒状的支撑棒，设置在所述支承块的上表面，而且为了使该支撑棒与所述热线之间的接触面实现最小化来防止热损失，并且防止因所述热线的高热而导致所述热线支撑件损坏，所述支撑棒与所述热线进行点接触。
另外，所述支撑棒的材料与所述热线的材料相同。
另外，所述支撑棒沿着与所述热线的长度方向正交的方向长长地设置。
另外，所述加热构件还包括由上部壁、下部壁及多个侧壁构成的外罩，该外罩使设置有所述热线的内部空间与所述处理室的内部隔开。
另外，所述加热构件还包括供给口，该供给口设置在所述下部壁，用于向所述内部空间供给吹扫气体，从而使处理气体不能侵入所述内部空间。
另外，所述加热构件还包括排气口，该排气口设置在所述下部壁，用于将通过所述供给口供给至所述内部空间的吹扫气体排出。
另外，所述加热构件包括多个侧孔，该侧孔形成在所述外罩的侧壁，用于将通过所述供给口供给至所述内部空间的吹扫气体排出。
另外，所述上部壁，由能够使从所述热线放出的辐射热通过的透明的石英材料形成。
另外，在所述基板基座与所述加热构件之间，形成有用于以辐射方式传递所述热线的热源的辐射热传递空间。
根据本发明的一个侧面，提供一种加热构件，包括：外罩，以与外部环境隔开的方式，由上部壁、下部壁及多个侧壁构成内部空间；在所述内部空间，用于对所述基板基座进行加热的多个热线，以所述基板基座的旋转轴为中心，在同心圆上水平和垂直地配置有多列。
另外，还包括多个热线支撑件，为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述热线支撑件支撑所述热线；为了确保所述热线的热膨胀后的流动性，所述热线支撑件包括沿着与所述热线的长度方向正交的方向形成的凹陷的支撑面。
另外，还包括多个热线支撑件，为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述热线支撑件支撑所述热线；所述热线支撑件包括：支承块；棒状的支撑棒，设置在所述支承块的上表面，而且为了使该支撑棒与所述热线之间的接触面实现最小化来防止热损失，并且防止因所述热线的高热而导致所述热线支撑件损坏，所述支撑棒与所述热线进行点接触。
另外，所述加热构件还包括：供给口，用于向所述内部空间供给吹扫气体，从而使处理气体不能侵入所述内部空间；排气口，用于使通过所述供给口供给至所述内部空间的吹扫气体排出。
发明的效果
根据本发明的实施例，具有使基板的温度分布偏差实现最小化的特别效果。
此外，根据本发明，具有能够提高热效率的特别效果。
根据本发明的实施例，能够提高温度均匀性。
根据本发明的实施例，能够防止因热线的热膨胀而产生的热线下垂和扭曲。
根据本发明的实施例，能够防止因处理气体而使热线腐蚀。
附图说明
图1是用于说明本发明的原子层沉积装置的图。
图2a及图2b是图1所示的喷射构件的立体图和剖视图。
图3是图1所示的基板基座的立体图。
图4是用于说明加热构件的基板处理装置的主要部分的剖视图。
图5是示出由热线支撑件支撑的多个热线的图。
图6是示出热线在热膨胀前和热膨胀后的状态的图。
图7是示出热线支撑件的其他例的图。
具体实施方式
以下，参照附图详细说明本发明的优选实施例。可通过与附图关联的多个实施例，容易理解上述的本发明所要解决的技术问题、技术手段及效果。为了清楚地说明本发明，各附图的一部分被省略或者放大。在对各附图中的结构部件标注附图标记时，即便是不同的附图，对相同的结构部件，也尽可能地标注相同的附图标记。此外，在说明本发明时，如果判断为对相关公知结构或功能的具体说明妨碍对本发明实施例的理解时，则省略其详细说明。
(实施例)
图1是用于说明本发明的原子层沉积装置的图。图2a及图2b是图1所示的喷射构件的立体图和剖视图。图3是图1所示的基板基座的立体图。
参照图1至图3，本发明实施例的原子层沉积装置10包括处理室(processchamber)100、作为基板支撑构件(supportmember)的基板基座200、喷射构件300、供给构件400及加热构件800。
处理室100的一侧设置有出入口112。在进行处理时，多个基板W通过出入口112进出。此外，处理室100的下部边缘具有排气管道120和排气管114，所述排气管道120和排气管114用于排出向处理室供给的反应气体和吹扫气体(purgegas)及在进行原子层沉积处理中产生的反应分散物。排气管道120形成为位于基板基座200的外侧的环形。虽然没有图示，对于本领域技术人员而言，排气管114与真空泵连接，并且在排气管设置有压力控制阀、流量控制阀等是显而易见的。
如图1至图2b所示，喷射构件300向放置在基板基座200的4张基板分别喷射气体。喷射构件300从供给构件400接收第一反应气体、第二反应气体及吹扫气体的供给。喷射构件300包括：头部310，该头部310具有第一至第四导流板320a-320d，所述第一至第四导流板320a-320d在与各基板对应的位置上，对基板的整个处理面喷射来自供给构件400的气体；轴330，其贯通设置在处理室100的上部中央，并支撑头部310。头部310形成为圆板形状，其中，具有用于在内部收容各气体的独立空间的第一至第四导流板320a-320d，以头部310的中心为基准、且以90度间隔划分为扇形，而且在底面形成有多个气体喷出口312。向第一至第四导流板320a-320d的各独立空间供给来自供给构件400的气体，这些气体通过多个气体喷出口312喷射，并供给至基板。向第一导流板320a提供第一反应气体，向第三导流板320c提供第二反应气体，向位于第一导流板320a与第三导流板320c之间的第二导流板320b和第四导流板320d提供吹扫气体，该吹扫气体用于阻止第一反应气体与第二反应气体混合并吹扫未反应气体。
例如，在头部310中，第一至第四导流板320a-320d以90度间隔形成为扇形，但是本发明不限于此，可根据处理目的或特性，以45度间隔或者180度间隔构成，也可以使各导流板的大小不同。
参照图1，供给构件400包括第一气体供给构件410a、第二气体供给构件410b及吹扫气体供给构件420。第一气体供给构件410a将用于在基板w上形成规定的薄膜的第一反应气体供给至第一导流板320a，第二气体供给构件410b将第二反应气体供给至第三导流板320c，吹扫气体供给构件420将吹扫气体供给至第二及第四导流板320b、320d。吹扫气体供给构件420以规定流量持续供给吹扫气体，但是第一气体供给构件410a和第二气体供给构件410b利用多个高压填充罐(未图示)，将以高压填充的反应气体短时间内放出(快速供给方式)并扩散在基板上。
在本实施例中，为了供给两种彼此不同的反应气体，而使用两个气体供给构件，但是可根据处理特性，使用多个气体供给构件来供给三种以上的彼此不同的反应气体。
如图1及图3所示，基板基座200设置在处理室100的内部空间。作为一例，基板基座200形成为放置4张基板的配置类型。基板基座形成为圆板形状，并且在其上部面形成有用于放置多个基板的第一至第四载物台212a-212d。设置在基板基座的第一至第四载物台212a-212d可形成为与基板的形状相似的圆形。第一至第四载物台212a-212d以基板基座200的中央为中心，且以90的间隔配置在同心圆上。
在基板基座200中，载物台可以是3个或者4个以上，而不是4个。
基板基座200通过与旋转轴280连接的驱动部290而旋转。用于使基板基座200旋转的驱动部290，优选使用设置有能够控制驱动马达的转数和转速的编码器的步进电机，通过编码器，控制喷射构件300的一个循环处理(第一反应气体-吹扫气体-第二反应气体-吹扫气体)的时间。
虽然没有图示，基板基座200可具有用于在各载物台上使基板W提升和下降的多个升降销(未图示)。升降销使基板W进行升降，从而使基板W与基板基座200的载物台相隔开，或者将基板W安装在载物台上。
图4是用于说明加热构件的基板处理装置的主要部分的剖视图，图5是示出由热线支撑件支撑的热线的图。并且，图6是示出热线在热膨胀前和热膨胀后的状态的图。
参照图4及图5，加热构件800位于基板基座200的下部。加热构件800为了使基板的温度上升至已设定温度(处理温度)，而对基板基座200进行加热。在加热构件800与基板基座200之间可具有几毫米的空隙808。加热构件的热能，通过空隙以辐射传递方式传递至基板基座，而不是传导方式，从而使基板基座200的温度均匀性更好。
加热构件800包括外罩810、多个热线820及多个热线支撑件830。
外罩810具有与外部环境(处理室的处理空间)相隔开的内部空间802，内部空间802由上部壁812、下部壁814及多个侧壁816确定。在内部空间802设置有多个热线820。上部壁812可以由透明的石英材料形成，以便能够使从热线820放出的辐射热通过。
在外罩810的下部壁814分别设置有供给口852和排气口854。供给口852与用于供给吹扫气体的供给管853连接。通过经由供给口852供给的吹扫气体，使得外罩内部压力维持为比处理室压力高，从而防止在进行处理时处理气体侵入外罩810的内部空间。此外，排气口854与排气管855连接。经由供给口852供给至内部空间的吹扫气体，通过排气口854向排气管855排出。
另外，在排出外罩810内部的吹扫气体时，除了通过排气口854排出以外，也可以通过形成在侧壁816的多个侧孔858排出。多个侧孔858与排气管道120连接。在本实施例中，在排出吹扫气体时，可通过排气口854及多个侧孔858中的一个来排出。
多个热线820作为用于对基板基座200加热的发热体，以基板基座200的旋转中心为基准，水平和垂直地在同心圆上配置有多列。这样，通过使多个热线820水平和垂直地在内部空间802配置多列，能够改进因基板数量增加和腔室边缘部抽吸(pumping)而引起基板基座200的温度降低。在本实施例中，多个热线820在垂直方向上配置2列，且在水平方向上配置5列。
此外，加热构件800可按照各区域分别控制多个热线820，从而将基板基座200的温度均匀性维持为恒定。可通过设置在基板基座200的内表面的多个温度传感器(未图示)的温度值，来按照区域控制热线820的温度。
多个热线支撑件830作为支撑热线820的构件，用于防止因热线820的热膨胀而热线820下垂和扭曲。
可以每隔热线820的规定长度或者规定角度，设置热线支撑件830。为了确保热线820热膨胀后的流动性，热线支撑件830具有沿与热线820的长度方向正交的方向形成的凹陷的支撑面832。支撑面832的长度可以比热线820的直径宽2-3倍。如图6所示，即便因热线820的热膨胀而热线的半径变大，热线支撑件830也能够稳定地支撑热线820。
图7是示出热线支撑件的其他例的图。
参照图7，热线支撑件840包括支承块842和设置在支承块842的上表面的支撑棒844。为了使支撑棒844与热线820之间的接触面实现最小化来防止热损失，并且防止因热线的高热而导致热线支撑件840损坏，支撑棒844形成为与热线820进行点接触的棒状。支撑棒844的材料可以与热线820的材料相同。
以上说明只是示意性地说明了本发明的技术思想，对于本领域技术人员而言，在不脱离本发明的本质上的特征范围内的情况下，可进行多种修改和变更。因此，本发明所公开的多个实施例不是限定本发明的技术思想，而是用于说明本发明的技术思想。本发明的保护范围应当根据权利要求书来解释，与其同等范围内的所有技术思想都应当解释为落入本发明的权利范围内。

Claims (16)

1.一种基板处理装置，其特征在于，
包括：
处理室，
基板基座，设置在所述处理室，在该基板基座的同一平面上放置有多个基板，该基板基座与旋转轴连接来旋转，
加热构件，位于所述基板基座的底面，以及
喷射构件，在与放置于所述基板基座的多个基板分别对应的位置，对基板的整个处理面喷射气体；
所述加热构件具有内部空间，在所述内部空间，用于对所述基板基座进行加热的多个热线，以所述基板基座的旋转轴为中心，在同心圆上水平和垂直地配置有多列。
2.根据权利要求1所述的基板处理装置，其特征在于，
为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述加热构件还包括用于支撑所述热线的多个热线支撑件。
3.根据权利要求2所述的基板处理装置，其特征在于，
为了确保所述热线的热膨胀后的流动性，所述热线支撑件包括沿着与所述热线的长度方向正交的方向形成的凹陷的支撑面。
4.根据权利要求2所述的基板处理装置，其特征在于，
所述热线支撑件包括：
支承块；以及
棒状的支撑棒，设置在所述支承块的上表面，而且为了使该支撑棒与所述热线之间的接触面实现最小化来防止热损失，并且防止因所述热线的高热而导致所述热线支撑件损坏，所述支撑棒与所述热线进行点接触。
5.根据权利要求4所述的基板处理装置，其特征在于，
所述支撑棒的材料与所述热线的材料相同。
6.根据权利要求4所述的基板处理装置，其特征在于，
所述支撑棒沿着与所述热线的长度方向正交的方向长长地设置。
7.根据权利要求1所述的基板处理装置，其特征在于，
所述加热构件还包括由上部壁、下部壁及多个侧壁构成的外罩，该外罩使设置有所述热线的内部空间与所述处理室的内部隔开。
8.根据权利要求7所述的基板处理装置，其特征在于，
所述加热构件还包括供给口，该供给口设置在所述下部壁，用于向所述内部空间供给吹扫气体，从而使处理气体不能侵入所述内部空间。
9.根据权利要求8所述的基板处理装置，其特征在于，
所述加热构件还包括排气口，该排气口设置在所述下部壁，用于将通过所述供给口供给至所述内部空间的吹扫气体排出。
10.根据权利要求8所述的基板处理装置，其特征在于，
所述加热构件包括多个侧孔，该侧孔形成在所述外罩的侧壁，用于将通过所述供给口供给至所述内部空间的吹扫气体排出。
11.根据权利要求1所述的基板处理装置，其特征在于，
所述上部壁，由能够使从所述热线放出的辐射热通过的透明的石英材料形成。
12.根据权利要求1所述的基板处理装置，其特征在于，
在所述基板基座与所述加热构件之间，形成有用于以辐射方式传递所述热线的热源的辐射热传递空间。
13.一种加热构件，用于对基板基座进行加热，该加热构件的特征在于，
包括：外罩，以与外部环境隔开的方式，由上部壁、下部壁及多个侧壁构成内部空间；
在所述内部空间，用于对所述基板基座进行加热的多个热线，以所述基板基座的旋转轴为中心，在同心圆上水平和垂直地配置有多列。
14.根据权利要求13所述的加热构件，其特征在于，
还包括多个热线支撑件，为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述热线支撑件支撑所述热线，
为了确保所述热线的热膨胀后的流动性，所述热线支撑件包括沿着与所述热线的长度方向正交的方向形成的凹陷的支撑面。
15.根据权利要求13所述的加热构件，其特征在于，
还包括多个热线支撑件，为了防止因所述热线的热膨胀而产生的热线的下垂和扭曲，所述热线支撑件支撑所述热线，
所述热线支撑件包括：
支承块；以及
棒状的支撑棒，设置在所述支承块的上表面，而且为了使该支撑棒与所述热线之间的接触面实现最小化来防止热损失，并且防止因所述热线的高热而导致所述热线支撑件损坏，所述支撑棒与所述热线进行点接触。
16.根据权利要求13所述的加热构件，其特征在于，
所述加热构件还包括：
供给口，用于向所述内部空间供给吹扫气体，从而使处理气体不能侵入所述内部空间；及
排气口，用于使通过所述供给口供给至所述内部空间的吹扫气体排出。
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Publication number Priority date Publication date Assignee Title
CN107460451A (zh) * 2016-06-06 2017-12-12 应用材料公司 自居中底座加热器
CN109844175A (zh) * 2016-10-05 2019-06-04 洛佩诗公司 具有在反应室外部的反射器的外延沉积反应器以及冷却衬托器和基底的方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102238016B1 (ko) * 2019-11-07 2021-04-08 주식회사 한화 열 구멍이 마련된 기판 처리 장치
KR102621848B1 (ko) * 2020-12-18 2024-01-09 세메스 주식회사 지지 유닛 및 기판 처리 장치
DE102023100077A1 (de) * 2023-01-03 2024-07-04 Aixtron Se Vorrichtung und Verfahren zum Behandeln von Substraten
WO2024201596A1 (ja) * 2023-03-24 2024-10-03 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012548A (ja) * 1998-06-17 2000-01-14 Sukegawa Electric Co Ltd 板体加熱装置
CN1830072A (zh) * 2003-09-03 2006-09-06 东京毅力科创株式会社 气体处理装置和散热方法
US20100132615A1 (en) * 2008-12-02 2010-06-03 Tokyo Electron Limited Film deposition apparatus
CN102549086A (zh) * 2009-09-16 2012-07-04 日立化成工业株式会社 印刷法用油墨以及用于该油墨的金属纳米粒子、以及布线、电路基板、半导体封装

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
US6576062B2 (en) * 2000-01-06 2003-06-10 Tokyo Electron Limited Film forming apparatus and film forming method
JP4374746B2 (ja) * 2000-07-21 2009-12-02 パナソニック株式会社 誘導加熱調理器
JP3713220B2 (ja) * 2001-06-15 2005-11-09 日本特殊陶業株式会社 セラミックヒータ
KR100890493B1 (ko) * 2003-04-18 2009-03-26 가부시키가이샤 히다치 고쿠사이 덴키 반도체 제조 장치
JP2004342450A (ja) * 2003-05-15 2004-12-02 Kokusai Electric Semiconductor Service Inc 高周波誘導加熱装置及び半導体製造装置
KR101289344B1 (ko) * 2006-05-15 2013-07-29 주성엔지니어링(주) 기판 처리 장치
JP5181100B2 (ja) * 2009-04-09 2013-04-10 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5087657B2 (ja) * 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
JP5787563B2 (ja) * 2010-05-11 2015-09-30 株式会社日立国際電気 ヒータ支持装置及び加熱装置及び基板処理装置及び半導体装置の製造方法及び基板の製造方法及び保持用ピース
JP5743188B2 (ja) * 2011-02-15 2015-07-01 横河電機株式会社 ヒータ管
KR20130007149A (ko) * 2011-06-29 2013-01-18 세메스 주식회사 기판처리장치
JP5712879B2 (ja) * 2011-09-22 2015-05-07 東京エレクトロン株式会社 成膜装置及び基板処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012548A (ja) * 1998-06-17 2000-01-14 Sukegawa Electric Co Ltd 板体加熱装置
CN1830072A (zh) * 2003-09-03 2006-09-06 东京毅力科创株式会社 气体处理装置和散热方法
US20100132615A1 (en) * 2008-12-02 2010-06-03 Tokyo Electron Limited Film deposition apparatus
CN102549086A (zh) * 2009-09-16 2012-07-04 日立化成工业株式会社 印刷法用油墨以及用于该油墨的金属纳米粒子、以及布线、电路基板、半导体封装

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107460451A (zh) * 2016-06-06 2017-12-12 应用材料公司 自居中底座加热器
CN107460451B (zh) * 2016-06-06 2021-07-06 应用材料公司 自居中底座加热器
CN109844175A (zh) * 2016-10-05 2019-06-04 洛佩诗公司 具有在反应室外部的反射器的外延沉积反应器以及冷却衬托器和基底的方法

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