TWI580813B - 加熱器構件及含其之基板處理裝置 - Google Patents

加熱器構件及含其之基板處理裝置 Download PDF

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TWI580813B
TWI580813B TW103126604A TW103126604A TWI580813B TW I580813 B TWI580813 B TW I580813B TW 103126604 A TW103126604 A TW 103126604A TW 103126604 A TW103126604 A TW 103126604A TW I580813 B TWI580813 B TW I580813B
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heat
hot wire
heating member
processing apparatus
substrate
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TW201512450A (zh
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方弘柱
金尙年
申東和
金玟錫
梁真榮
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國際電氣高麗股份有限公司
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Description

加熱器構件及含其之基板處理裝置
本發明乃是關於一種基板處理裝置，更特定地，係關於一種包含有加熱構件的基板處理裝置。
在製造半導體裝置的沉積製程中，原子層沉積製程係被導入用以改善沉積層的均覆性。在原子層沉積製程，係將用以沉積約一層原子層厚度的單位反應循環不斷重複，以形成具有預設之厚度的沉積層。
相較於化學汽相沈積法(CVD)或濺鍍製程，原子層沉積製程可能會造成生產力降低，理由在於，沉積速度不夠快，需要特別長的時間來形成具有預設之厚度的沉積層。
除此之外，基板致於其上的基板基座之溫度均勻性也是一大因素，基板基座之溫度均勻性會進而影響基板上之原子層沉積的厚度均勻性。然而，由於基板數目和熱損失的增加，基板基座之邊緣部分的溫度會降低。同時，加熱器的作用也會退化，理由在於氧化層的沉積以及導入處理氣體造成加熱器被腐蝕。
本發明致力於提供一加熱構件，可以改善溫度的均勻性，並且，提供一具有該加熱構件的基板處理裝置。
本發明也致力於提供一加熱構件，可以避免熱線因為熱膨脹現象而掉落和扭轉，並且，提供一具有該加熱構件的基板處理裝置。
本發明也致力於提供一加熱構件，可以避免熱線在處理過程進行時被處理氣體所腐蝕，並且，提供一具有該加熱構件的基板處理裝置。
本發明之特徵並不由前述所限定，且其餘於此未詳述的特徵應可由該發明所屬技術領域中具有通常知識者根據以下描述所知悉。
本發明致力於提供一基板處理裝置，包括有處理腔室與基板基座。複數個基板置放於基板基座之同一平面上，且於處理腔室中，基板基座與一旋轉軸連接以進行轉動。加熱構件係設置於基板基座上。噴塗構件係用以將氣體分別噴塗在設置於基板基座上之複數個基板的整個處理表面上。其中，加熱構件具有一內部空間，此外，用以加熱基板基座之複數條熱線係以同心方向相對於基板基座之一轉軸設置，以形成複數個水平和垂直的列。
於本發明所提供之基板處理裝置中，加熱構件進一步地包括複數個熱線支持件，用以支撐熱線，以防止熱線因為熱膨脹現象而掉落或扭轉。
於本發明所提供之基板處理裝置中，每個熱線支持件具有一凹形支撐面，且凹形支撐面垂直於每條熱線的長度方向，以確保熱線熱膨脹時的彈性。
於本發明所提供之基板處理裝置中，每個熱線支持件包括支承塊與支承桿。支承桿係設置於支承塊之頂部表面，且支承桿為桿狀並與熱線為點接觸的形式，用以最小化支承桿與熱線的接觸面積，藉此避免熱線之熱損失，也避免由於熱線的高溫造成熱線之支撐斷裂。
於本發明所提供之基板處理裝置中，形成支承桿的材料與形成熱線的材料相同。
於本發明所提供之基板處理裝置中，支承桿係以其長度方向設置，並與熱線之長度方向垂直。
於本發明所提供之基板處理裝置中，加熱構件進一步地包括有外殼，且外殼係定義為一上壁、一下壁與一側壁，以使得內部空間的熱線以與處理腔室之內部隔離的方式設置。
於本發明所提供之基板處理裝置中，加熱構件進一步地包括有供應端口，且供應端口設置於下壁內，用以供應一沖洗氣體至內部空間中，以防止處理氣體被導入內部空間。
於本發明所提供之基板處理裝置中，加熱構件進一步地包括有排放端口，且排放端口設置於下壁內，以經由排放端口排放被供應至內部空間的沖洗氣體。
於本發明所提供之基板處理裝置中，加熱構件包括有側孔，設置於外殼之每個側壁中，以排放經由供應端口供應至內部空間的沖洗氣體。
於本發明所提供之基板處理裝置中，上壁係以一透明二氧化矽材料所形成，熱線所放射出的輻射熱係透過由透明二氧化矽材料所形成之上壁傳遞。
於本發明所提供之基板處理裝置中，一輻射熱傳遞空間係定義為該基板基座和該加熱構件之間，用以以一輻射傳遞方式傳遞該熱線的熱源。
本發明致力於提供另一加熱構件，用以加熱一基板基座。加熱構件包括有外殼與複數條熱線。外殼之上壁、下壁與複數個側壁係形成一內部空間，用以與外部空間隔離。複數條熱線用以加熱基板基座，且熱線係以同心方向相對基板基座設置於內部空間中，以形成複數個水平和垂直的軸。
於本發明所提供之加熱構件中，進一步地包括有複數個熱線支持件，用以支撐熱線，以防止熱線因為熱膨脹現象而掉落或扭轉。除此之外，每個熱線支持件具有一凹形支撐面，該凹形支撐面垂直於每條熱線的長度方向，以確保熱線熱膨脹時的彈性。
於本發明所提供之加熱構件中，進一步地包括有複數個熱線支持件，用以支撐熱線，以防止熱線因為熱膨脹現象而掉落或扭轉。除此之外，每個熱線支持件包括有支承塊與支承桿，其中，支承桿設置於支承塊之頂部表面，支承桿為桿狀並與熱線為點接觸的形式，用以最小化支承桿與該熱線的接觸面積，藉此避免熱線之熱損失，也避免由於熱線的高溫造成熱線之支撐斷裂。
於本發明所提供之加熱構件中，加熱構件進一步地包括有支撐端口與排放端口，其中，支撐端口係用以供應一沖洗氣體進入內部空間，以防止處理氣體被導入內部空間內，並且，排放端口係用以排放經由供應端口被供應至內部空間中的沖洗氣體。
為使能更進一步瞭解本發明之特徵及技術內容，請參閱以下有關本發明之詳細說明與附圖，但是此等說明與所附圖式僅係用來說明本發明，而非對本發明的權利範圍作任何的限制。
10‧‧‧原子層沉積裝置
100‧‧‧處理腔室
114‧‧‧排出管
120‧‧‧排出溝槽
200‧‧‧基板基座
212a‧‧‧第一平台
212b‧‧‧第二平台
212c‧‧‧第三平台
212d‧‧‧第四平台
280‧‧‧旋轉軸
290‧‧‧驅動單元
300‧‧‧噴塗構件
310‧‧‧頭部
312‧‧‧氣體排放孔
320a‧‧‧第一擋板
320b‧‧‧第二擋板
320c‧‧‧第三擋板
320d‧‧‧第四擋板
330‧‧‧軸
400‧‧‧供應構件
410a‧‧‧第一氣體供應構件
410b‧‧‧第二氣體供應構件
420‧‧‧沖洗氣體供應構件
800‧‧‧加熱構件
802‧‧‧內部空間
808‧‧‧空氣間隙
810‧‧‧外殼
812‧‧‧上壁
814‧‧‧下壁
816‧‧‧側壁
820‧‧‧熱線
830‧‧‧熱線支持件
832‧‧‧凹形支撐面
840‧‧‧熱線支持件
842‧‧‧支承塊
844‧‧‧支承桿
852‧‧‧供應端口
853‧‧‧供應線
854‧‧‧排放端口
855‧‧‧排放線
858‧‧‧側孔
W‧‧‧基板
本發明在所附圖式中係舉例說明而未具有任何限制，其中相同的元件符號標示相同的元件，且其中：圖1為根據本發明例示性實施例所繪示之一原子層沉積裝置之示意圖。
圖2A和圖2B為顯示圖1中之噴塗構件的透視圖與截面圖。
圖3為顯示圖1中之基板基座的透視圖。
圖4為顯示本發明例示性實施例所繪示之基板處理裝置之主要部份的截面圖，用以解釋加熱構件。
圖5為顯示以熱線支持件支撐之熱線的視圖。
圖6為顯示以熱線於熱膨脹前與熱膨脹後的視圖。
圖7為根據本發明另一例所繪示之熱線支持件的視圖。
熟悉此技術者了解圖中的元件係為了簡化及清楚說明，且不必然按比例繪製。例如，圖中的一些元件尺寸相對於其他元件係放大繪製，以幫助對本發明具體實施例的了解。
現在參照附圖更全面地描述本發明之採用虛擬圖案的靜電電容式觸控螢幕之觸控板結構，附圖中顯示了本發明的較佳實施例。然而本發明可以藉由許多不同形式實現並且不應解釋為侷限於本申請所闡述的實施例。更確切地，提供這些實施例是為了使本公開內容詳盡且全面，並且可以將本發明的範圍全面地轉達給本領域熟知此項技藝者。在諸圖式中，可為了清楚而誇示層及區之大小及相對大小。類似數字始終指示類似元件。應理解，雖然本文中可能使用術語第一、第二、第三等來描述各種元件，但此等元件不應受此等術語限制。此等術語乃用以區分一元件與另一元件。因此，下文論述之第一元件可稱為第二元件而不偏離本發明概念之教示。如本文中所使用，術語「及/或」包括相關聯之列出項目中之任一者及一或多者之所有組合。在下文將參看隨附圖式詳細地描述本發明之各例示性實施例。
[實施例]
圖1為根據本發明例示性實施例所繪示之一原子層沉積裝置之示意圖，圖2A和圖2B為顯示圖1中之噴塗構件的透視圖與截面圖，且圖3為顯示圖1中之基板基座的透視圖。
請參照圖1至圖3，根據本發明一實施例之原子層沉積裝置10包括處理腔室100、基板基座200，其中，基板基座200係為基板支撐構件、噴塗構件300、供應構件400與加熱構件800。
處理腔室100的一側係有一入口112。當處理過程進行時，複數個基板W係經由入口112進行上載或卸載。同時，處理腔室100包括有排出溝槽120與排出管114以於下部邊緣將所供應之反應氣體與沖洗氣體以及原子層沉積製程中所產生的副產物排出。排出溝槽120係為環形且係設置於基板基座200的外側。雖然未示於圖中，但對於該發明所屬技術領域中具有通常知識者來說，可以理 解排出管114與一真空幫浦連接，並且，壓力控制閥、流量控制閥與其類似物係設置於排放管中。
請參照圖1至圖2B，噴塗構件300將一氣體噴塗在基板基座200上之四片基板的每一個上。噴塗構件300經由供應構件400接收第一和第二反應氣體與一沖洗氣體。噴塗構件300包括有頭部310，頭部310包括有第一至第四擋板320a~320d，以將供應構件400供應的氣體噴塗到處理位置上之基板的整個處理表面，並且，軸330係通過處理腔室100的上中心，以支撐頭部310。頭部310係為圓盤狀。第一至第四擋板320a~320d係個別具有獨立空間，以接收氣體，並且，第一至第四擋板係為相對頭部310之中心以約90°角區分成的扇形。複數個氣體排放孔312係設置於頭部310之底部表面上。經由供應構件400供應的氣體係被供應至第一至第四擋板320a~320d的獨立空間中。氣體係經由氣體排放孔312噴塗至基板上。舉例來說，第一反應氣體係被供應至第一檔板320a內，並且，第二反應氣體係被供應至第三檔板320c內，用以避免第一和第二氣體彼此混合，非反應氣體係被供應至第二擋板320b和第四擋板320d內，用以進行沖洗。
舉例來說，雖然頭部310之第一至第四擋板320a~320d係以約90°角區分成的扇形，但本發明並不以此為限。舉例來說，根據處理的情況和特性，第一至第四擋板320a~320d中的每一個亦可為夾角約45°或約180°的扇形。可選擇地，第一至第四擋板320a~320d彼此的大小可以不相同。
請參照圖1，供應構件400包括有第一氣體供應構件410a、第二氣體供應構件410b，以及沖洗氣體供應構件420。第一氣體供應構件410a供應第一反應氣體，以於第一檔板320a上之基板W上形成預設之薄膜，並且，第二氣體供應構件410b供應第二反應氣體至第三檔板320c。同時，沖洗氣體供應構件供應沖洗氣體至第二擋板320b和第四擋板320d上。沖洗氣體供應構件420連續地以一相同 的流速供應沖洗氣體。然而，第一氣體供應構件410a和第二氣體供應構件410b於一短時間排放(一快速供應方式)在高壓下藉由高壓供料槽(未圖示)供應的反應氣體，以將反應氣體擴散至基板上。
雖然，於此實施例中，兩個氣體供應構件係用以兩種不同的反應氣體，但是本發明並不以此為限。舉例來說，根據本發明，複數個飯應氣體供應構件可用以提供至少三種不同的反應氣體。
請參照圖1和圖3，基板基座200係設置於處理腔室100的內部空間中。舉例來說，基板基座200係為批次型，四片基板係置於基板基座200中。基板基座200係為圓盤狀，並具有第一至第四平台212a~212d，基板係分別置於平台上。設置於基板基座200上之第一至第四平台212a~212d中的每一個係為圓形，並與基板W的形狀相類似。第一至第四平台212a~212d係相對基板基座200之中心以約90°角設置。
基板基座200所具有的平台可為三個、四個或是四個以上。
基板基座2100係藉由驅動單元290轉動，驅動單元290係與旋轉軸280連接。驅動單元290係利用步進馬達使基板基座200轉動，步進馬達中設置有編碼器，以控制旋轉數目和驅動馬達的轉速。因此，驅動單元290係可利用編碼器來控制噴塗構件300進行一次循環處理的時間(第一反應器體-沖洗氣體-第二反應氣體-沖洗氣體)。
雖然未示於圖中，基板基座200包括有複數個升降銷(未圖示)以升降每個平台上的基板W。升降銷係升降基板W，使基板W至於平台上或離開平台。
圖4為顯示本發明例示性實施例所繪示之基板處理裝置之主要部份的截面圖，用以解釋加熱構件，圖5為顯示以熱線支持件支撐之熱線的視圖，並且，圖6為顯示以熱線於熱膨脹前與熱膨脹後的視圖。
請參照圖4和圖5，加熱構件800係位於基板基座200下方。加熱構件800加熱基板基座200以將基板W的溫度增加到一預設之溫度(一處理溫度)。加熱構件800和基板基座200之間係具有數毫米的空氣間隙808。由於存在有空氣間隙808，加熱構件800的熱能係以輻射傳遞方式傳遞至基板基座200，而非藉由傳導傳遞方式將熱能傳遞至基板基座200，如此一來，便能改善溫度的均勻性。
加熱構件800包括有外殼810、複數條熱線820與複數個熱線支持件830。外殼810具有一內部空間802，內部空間802係與外部空間隔離(處理腔室的處理空間)，並且，內部空間802係具有上壁812、下壁814與複數個側壁816。複數條熱線係設置於內部空間802內。上壁812係以一透明二氧化矽材料形成，透過該透明二氧化矽材料可以傳遞由每一條熱線所傳遞的輻射熱。
供應端口852和排放端口854係設置於外殼810的下壁814內。用以供應沖洗氣體的供應線853係與供應端口852連接。在進行處理時，由於供應端口850供應沖洗氣體以避免處理氣體被導入外殼810的內部空間，外殼810之內部壓力係維持大於處理腔室100的壓力。同時，排放線855係與排放端口854連接。經由供應端口852被供應至內部空間中的沖洗氣體係經由排放端口854被排出至排放線855。
除了經由排放端口854，外殼810內的沖洗氣體亦可經由側壁中的側孔858被排放。側孔858係與排出溝槽120連接。於此實施例中，沖洗氣體係經由排放端口854和複數個側孔858排放。
複數條熱線820係作為加入元件用以加熱基板基座200。複數條熱線820係以同心方式相對基板基座200之轉軸設置，以形成複數個水平或垂直的列。複數條熱線820係以同心方式設置於內部空間802，並形成複數個水平或垂直的列，以改善由於基板數量增加與腔室邊緣部分被沖擊所造成的溫度下降。於此實施例中，熱線820係設置以形成兩個垂直列與五個水平列。
同時，加熱構件800係於分別地控制熱線820的每個線段，以固定地維持基板基座200的溫度均勻性。熱線820的每個線段之溫度係根據溫度感測器(未圖示)的溫度值做控制，溫度感測器係設置於基板基座200的內表面上。
複數個熱線支持件830係用以支撐熱線820。複數個熱線支持件830係用以避免熱線820因為其熱膨脹現象而掉落或扭轉。
熱線支持件830係以一預設距離或一預設角度彼此間相隔地設置在熱線820的下部。每個熱線支持件830具有凹形支撐面832，凹形支撐面832係垂直該每條熱線820的長度方向，以確保熱線820熱膨脹時的彈性。凹形支撐面832的長度係較熱線820之直徑長兩至三唄。因此，如圖6所示，即使熱膨脹現象發生時，熱線820的半徑增加，熱線支持件830還是可以穩定地支撐熱線820。
圖7為根據本發明另一例所繪示之熱線支持件的視圖。
請參照圖7，熱線支持件840包括有支承塊842與支承桿844。支承桿844係設置於支承塊842的頂部表面。支承桿844為桿狀並與熱線820為點接觸的形式，以最小化該支承桿與該熱線的接觸面積，藉此避免熱線820之熱損失，也避免由於熱線820的高溫造成熱線支持件840斷裂。形成支承桿844的材料係與形成熱線820的材料相同。
根據本發明之實施例的基板處理裝置，可以使基板上溫度分布的差異達到最小化。
並且，根據本發明之實施例的基板處理裝置，可以增加溫傳熱效率。
同時，根據本發明之實施例的基板處理裝置，可以增加溫度的均勻性。
根據本發明之實施例的基板處理裝置，可以避免熱線因為熱膨脹現象而掉落或扭轉。
根據本發明之實施例的基板處理裝置，可以避免熱線被處理氣體所腐蝕。
以上之說明並未脫離對本發明之技術思想進行例示性說明之範圍，因此若為本發明所屬技術領域中具有通常知識者，則可於不脫離本發明之本質的特性之範圍內進行多樣的修正及變形。因此，本發明所例示之實施形態並非限定本發明之技術思想者，僅係用於說明，根據該實施形態，並非限定本發明之技術思想之範圍。本發明之保護範圍必須藉由以下申請專利範圍進行解釋，與其同等之範圍內所有之技術思想係必須作為本發明之保護範圍內所包含者進行解釋。
10‧‧‧原子層沉積裝置
100‧‧‧處理腔室
114‧‧‧排出管
120‧‧‧排出溝槽
200‧‧‧基板基座
280‧‧‧旋轉軸
290‧‧‧驅動單元
300‧‧‧噴塗構件
310‧‧‧頭部
400‧‧‧供應構件
410a‧‧‧第一氣體供應構件
410b‧‧‧第二氣體供應構件
420‧‧‧沖洗氣體供應構件
800‧‧‧加熱構件
W‧‧‧基板

Claims (15)

  1. 一基板處理裝置，包括：一處理腔室；以及一基板基座，複數個基板置放於該基板基座之同一平面上，於該處理腔室中，該基板基座與一旋轉軸連接以進行轉動；一加熱構件，設置於該基板基座上，以及一噴塗構件，用以將氣體分別噴塗在設置於該基板基座上之該複數個基板的整個處理表面上，其中，該加熱構件具有一內部空間，其中，用以加熱該基板基座之複數條熱線係以同心方向相對於該基板基座之一轉軸設置，以形成複數個水平和垂直的列；以及複數個熱線支持件，用以支撐該熱線以防止該熱線因為熱膨脹現象而掉落或扭轉。
  2. 如請求項1所述之基板處理裝置，其中，該每個熱線支持件具有一凹形支撐面，該凹形支撐面垂直於該每條熱線的長度方向，以確保該熱線熱膨脹時的彈性。
  3. 如請求項1所述之基板處理裝置，其中，該每個熱線支持件包括：一支承塊；以及一支承桿，設置於該支承塊之頂部表面，該支承桿為桿狀並與該熱線為點接觸的形式，以最小化該支承桿與該熱線的接觸面積，藉此避免該熱線之熱損失，也避免由於該熱線的高溫造成該熱線支持件斷裂。
  4. 如請求項3所述之基板處理裝置，其中，形成該支承桿的材料與形成該熱線的材料相同。
  5. 如請求項3所述之基板處理裝置，其中，該支承桿係以其長度方向設置，並與該熱線之長度方向垂直。
  6. 如請求項1所述之基板處理裝置，其中，該加熱構件進一步地包括有一外殼，該外殼係定義為一上壁、一下壁與複數個側壁，以使得該內部空間的該熱線以與該處理腔室之內部隔離的方式設置。
  7. 如請求項6所述之基板處理裝置，其中，該加熱構件進一步地包括有一供應端口，該供應端口設置於該下壁內，該供應端口供應一沖洗氣體至該內部空間中，以防止一處理氣體被導入該內部空間。
  8. 如請求項7所述之基板處理裝置，其中，該加熱構件進一步地包括有一排放端口，該排放端口設置於該下壁內，以經由該排放端口排放被供應至該內部空間的該沖洗氣體。
  9. 如請求項7所述之基板處理裝置，其中，該加熱構件包括有一側孔，設置於該外殼之每個側壁中，以排放經由該供應端口供應至該內部空間的該沖洗氣體。
  10. 如請求項1所述之基板處理裝置，其中，該上壁係以一透明二氧化矽材料所形成，該熱線所放射出的輻射熱係透過由該透明二氧化矽材料所形成之上壁傳遞。
  11. 如請求項1所述之基板處理裝置，其中，一輻射熱傳遞空間係定義為該基板基座和該加熱構件之間，用以以一輻射傳遞方式傳遞該熱線的熱源。
  12. 一加熱構件，用以加熱一基板基座，該加熱構件包括有： 一外殼，其中，該外殼之一上壁、一下壁與複數個側壁係形成一內部空間，用以與外部空間隔離；以及複數條熱線，用以加熱該基板基座，該熱線係以同心方向相對該基板基座設置於該內部空間中，以形成複數個水平和垂直的軸。
  13. 如請求項12所述之加熱構件，進一步地包括有複數個熱線支持件，用以支撐該熱線以防止該熱線因為熱膨脹現象而掉落或扭轉，其中，該每個熱線支持件具有一凹形支撐面，該凹形支撐面垂直於該每條熱線的長度方向，以確保該熱線熱膨脹時的彈性。
  14. 如請求項12所述之加熱構件，進一步地包括有複數個熱線支持件，用以支撐該熱線，以防止該熱線因為熱膨脹現象而掉落或扭轉，其中，該每個熱線支持件包括有：一支承塊；以及一支承桿，設置於該支承塊之頂部表面，該支承桿為桿狀並與該熱線為點接觸的形式，以最小化該支承桿與該熱線的接觸面積，藉此避免該熱線之熱損失，也避免由於該熱線的高溫造成該熱線支持件斷裂。
  15. 如請求項12所述之加熱構件，其中，該加熱構件進一步地包括有：一支撐端口，用以供應一沖洗氣體進入該內部空間，以防止該處理氣體被導入該內部空間內；以及一排放端口，用以排放經由該供應端口被供應至該內部空 間中的該沖洗氣體。
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