JP2016164973A - 回転式ガスシャワーヘッドを備えたスピンチャック - Google Patents
回転式ガスシャワーヘッドを備えたスピンチャック Download PDFInfo
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- JP2016164973A JP2016164973A JP2016014970A JP2016014970A JP2016164973A JP 2016164973 A JP2016164973 A JP 2016164973A JP 2016014970 A JP2016014970 A JP 2016014970A JP 2016014970 A JP2016014970 A JP 2016014970A JP 2016164973 A JP2016164973 A JP 2016164973A
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- spin chuck
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Nozzles (AREA)
Abstract
Description
Claims (19)
- ウエハ状物品を処理するための装置であって、
ウエハ状物品を所定の向きで保持するためのスピンチャックと、
前記スピンチャックによって保持されたときのウエハ状物品の表面にプロセスガスを供給するための回転式シャワーヘッドであって、その中央領域及び周辺領域のそれぞれに複数の開口が形成された出口板を含む回転式シャワーヘッドと、
プロセスガスをガス分布チャンバに供給するためのプロセスガス供給部であって、前記ガス分布チャンバは、前記シャワーヘッドに形成された複数の開口と流体連通している、プロセスガス供給部と、
を備える装置。 - 請求項1に記載の装置であって、
前記出口板は、前記スピンチャックに取り付けられ、その中央領域を覆っている、装置。 - 請求項1に記載の装置であって、
前記出口板は、少なくとも前記スピンチャックのリング部分と一体に形成される、装置。 - 請求項1に記載の装置であって、
前記複数の開口のそれぞれは、0.3〜2.0mm2の、好ましくは0.5〜1.5mm2の、更に好ましくは0.7〜1.2mm2の断面積を有する、装置。 - 請求項1に記載の装置であって、
前記複数の開口は、少なくとも50の、好ましくは少なくとも80の開口を含む、装置。 - 請求項1に記載の装置であって、
前記複数の開口は、流体を前記ガス分布チャンバから流れる流体を前記複数の開口を経て前記スピンチャックの半径方向外向きに流れるように方向付けるために、傾斜している、装置。 - 請求項1に記載の装置であって、
前記出口板は、その中央領域がその周辺領域よりも、前記スピンチャック上に位置決めされたときのウエハ状物品から遠く離れているように、ドーム状である、装置。 - 請求項1に記載の装置であって、
前記出口板は、セラミック材料で形成される、装置。 - 請求項1に記載の装置であって、
前記スピンチャックは、チャンバ内に配置される、装置。 - 請求項8に記載の装置であって、
前記チャンバは、密閉チャンバである、装置。 - 請求項1に記載の装置であって、
前記スピンチャックは、磁気ロータであり、前記装置は、更に、前記磁気ロータを取り囲む磁気ステータを備える装置。 - ウエハ状物品を処理するための装置であって、
ウエハ状物品を所定の向きで保持するためのスピンチャックと、
前記スピンチャックによって保持されたときのウエハ状物品の表面にプロセスガスを供給するための回転式シャワーヘッドと、
前記プロセスガスをガス分布チャンバに供給するためのプロセスガス供給部であって、前記ガス分布チャンバは、前記シャワーヘッドに形成された複数の開口と流体連通している、プロセスガス供給部と、
を備え、前記スピンチャックは、磁気ロータであり、前記装置は、更に、前記磁気ロータを取り囲む磁気ステータを備える装置。 - 請求項12に記載の装置であって、
前記回転式シャワーヘッドは、排出開口が形成された出口板を含み、前記出口板は、前記磁気ロータに取り付けられ、その中央領域を覆っている、装置。 - 請求項12に記載の装置であって、
前記出口板は、その中央領域がその周辺領域よりも、前記スピンチャック上に位置決めされたときのウエハ状物品から遠く離れているように、ドーム状である、装置。 - 請求項12に記載の装置であって、
前記チャンバは、前記磁気ロータの上方に位置決めされた周縁領域と、前記磁気ロータ内で下方へ伸びる中央領域とを有する上壁を含み、前記上壁の内表面と、前記出口板とが、前記ガス分布チャンバを形成している、装置。 - 請求項15に記載の装置であって、
前記上壁は、固定されている、装置。 - 請求項12に記載の装置であって、更に、
前記磁気ロータの周縁表面と、前記チャンバの内表面との間に形成された間隙に部六ガスを供給するためのブロックガス供給部を備え、前記間隙は、前記ガス分布チャンバ内にプロセスガスを閉じ込めるように位置決めされる、装置。 - 請求項12に記載の装置であって、更に、
前記上壁内に位置決めされ、前記出口板の中央開口に通されるガス注入ヘッドを備える装置。 - 請求項12に記載の装置であって、
前記回転式シャワーヘッドは、前記ウエハ状物品に向かって液体を供給することができる中央開口を含む、装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/615,099 | 2015-02-05 | ||
US14/615,099 US10167552B2 (en) | 2015-02-05 | 2015-02-05 | Spin chuck with rotating gas showerhead |
Publications (2)
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JP2016164973A true JP2016164973A (ja) | 2016-09-08 |
JP2016164973A5 JP2016164973A5 (ja) | 2019-03-07 |
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JP2016014970A Ceased JP2016164973A (ja) | 2015-02-05 | 2016-01-29 | 回転式ガスシャワーヘッドを備えたスピンチャック |
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US (1) | US10167552B2 (ja) |
JP (1) | JP2016164973A (ja) |
KR (1) | KR20160096540A (ja) |
CN (1) | CN105870037B (ja) |
SG (1) | SG10201600601PA (ja) |
TW (1) | TWI687540B (ja) |
Cited By (1)
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CN113467198B (zh) * | 2020-03-31 | 2023-04-18 | 长鑫存储技术有限公司 | 半导体设备及半导体结构的制备方法 |
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KR20230064110A (ko) * | 2021-11-03 | 2023-05-10 | 주식회사 한화 | 샤워 헤드 및 이를 포함하는 기판 처리 장치 |
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CN105870037B (zh) | 2019-01-04 |
US10167552B2 (en) | 2019-01-01 |
US20160230278A1 (en) | 2016-08-11 |
TW201702420A (zh) | 2017-01-16 |
SG10201600601PA (en) | 2016-09-29 |
CN105870037A (zh) | 2016-08-17 |
KR20160096540A (ko) | 2016-08-16 |
TWI687540B (zh) | 2020-03-11 |
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