JP6219179B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP6219179B2 JP6219179B2 JP2014008113A JP2014008113A JP6219179B2 JP 6219179 B2 JP6219179 B2 JP 6219179B2 JP 2014008113 A JP2014008113 A JP 2014008113A JP 2014008113 A JP2014008113 A JP 2014008113A JP 6219179 B2 JP6219179 B2 JP 6219179B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processing
- gas supply
- gas introduction
- supply pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000007789 gas Substances 0.000 claims description 312
- 238000009792 diffusion process Methods 0.000 claims description 60
- 238000000034 method Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 19
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Description
以上、一実施形態に係るプラズマ処理装置について説明したが、開示の技術はこれに限定されるものではない。以下では、他の実施形態について説明する。
2 載置台
15−1 第1の処理ガス供給源
15−2 第2の処理ガス供給源
15−3 第3の処理ガス供給源
15a 第1のガス供給配管
15c 第2のガス供給配管
15e 第3のガス供給配管
16 シャワーヘッド
16a 第1のガス拡散室
16b 第2のガス拡散室
16c 第1のガス導入孔
16d 第2のガス導入孔
60 制御部
Claims (5)
- 被処理基板にプラズマ処理を施すための処理容器と、
切り替え可能な第1及び第2のガス供給管にそれぞれ連通され、前記第1及び前記第2のガス供給管からそれぞれ供給される、前記プラズマ処理に用いられる第1及び第2の処理ガスを前記処理容器内に個別に導く第1及び第2のガス導入孔であって、互いに隣接した状態で交互に配置された第1及び第2のガス導入孔を有するガス導入部材と、
制御部と
を備え、
前記第1及び前記第2のガス供給管は、それぞれ第3のガス供給管に連結されており、
前記制御部は、前記第1及び前記第2のガス供給管を間歇的に切り替え、
前記第1のガス導入孔及び前記第2のガス導入孔は、前記第1及び前記第2のガス供給管からそれぞれ供給される、C4F6ガスを含む第1の処理ガスと、C4F8ガス又はC3F8ガスを含む第2の処理ガスとを前記処理容器内に独立的にそれぞれ供給し、
前記制御部は、前記第1の処理ガス及び前記第2の処理ガスとは異なる第3の処理ガスが前記第3のガス供給管から前記第1及び第2のガス供給管の両方に供給される状態で、前記第1のガス供給管及び前記第2のガス供給管を切り替える
ことを特徴とするプラズマ処理装置。 - 前記ガス導入部材は、前記第1及び前記第2のガス供給管からそれぞれ供給される前記第1及び第2の処理ガスをそれぞれ拡散させる、互いに上下方向に重合された第1及び第2のガス拡散領域をさらに有し、
前記第1及び前記第2のガス導入孔は、前記第1及び前記第2のガス拡散領域からそれぞれ延出するとともに、前記第1及び前記第2のガス拡散領域を介して前記第1及び前記第2のガス供給管にそれぞれ連通され、
前記第2のガス拡散領域は、前記第1のガス拡散領域から延出する前記第1のガス導入孔を避ける形状に形成された
ことを特徴とする請求項1に記載のプラズマ処理装置。 - 前記ガス導入部材は、円盤形状に形成され、
前記第1及び前記第2のガス導入孔は、前記ガス導入部材の円周方向に沿って互いに隣接した状態で交互に配置された
ことを特徴とする請求項1又は2に記載のプラズマ処理装置。 - 前記ガス導入部材は、円盤形状に形成され、
前記第1及び前記第2のガス導入孔は、前記ガス導入部材の径方向に沿って互いに隣接した状態で交互に配置された
ことを特徴とする請求項1又は2に記載のプラズマ処理装置。 - 前記第1及び前記第2のガス供給管の切り替えは、200msec以上500msec以下の期間毎に行われる
ことを特徴とする請求項1〜4のいずれか一つに記載のプラズマ処理装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014008113A JP6219179B2 (ja) | 2014-01-20 | 2014-01-20 | プラズマ処理装置 |
TW104101611A TWI643260B (zh) | 2014-01-20 | 2015-01-19 | 電漿處理裝置 |
KR1020150008665A KR102264005B1 (ko) | 2014-01-20 | 2015-01-19 | 플라즈마 처리 장치 |
EP15151662.2A EP2897156B1 (en) | 2014-01-20 | 2015-01-19 | Plasma etching process |
US14/600,224 US20150206713A1 (en) | 2014-01-20 | 2015-01-20 | Plasma processing apparatus |
US15/854,066 US20180122620A1 (en) | 2014-01-20 | 2017-12-26 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014008113A JP6219179B2 (ja) | 2014-01-20 | 2014-01-20 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015138810A JP2015138810A (ja) | 2015-07-30 |
JP6219179B2 true JP6219179B2 (ja) | 2017-10-25 |
Family
ID=52347242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014008113A Expired - Fee Related JP6219179B2 (ja) | 2014-01-20 | 2014-01-20 | プラズマ処理装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US20150206713A1 (ja) |
EP (1) | EP2897156B1 (ja) |
JP (1) | JP6219179B2 (ja) |
KR (1) | KR102264005B1 (ja) |
TW (1) | TWI643260B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
JP6430664B2 (ja) * | 2016-01-06 | 2018-11-28 | 東芝三菱電機産業システム株式会社 | ガス供給装置 |
JP6546874B2 (ja) | 2016-04-13 | 2019-07-17 | 東京エレクトロン株式会社 | ガス供給機構及び半導体製造システム |
US11094511B2 (en) * | 2018-11-13 | 2021-08-17 | Applied Materials, Inc. | Processing chamber with substrate edge enhancement processing |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3336665B2 (ja) * | 1993-03-17 | 2002-10-21 | 日新電機株式会社 | 微粒子発生方法及び装置 |
US5879459A (en) * | 1997-08-29 | 1999-03-09 | Genus, Inc. | Vertically-stacked process reactor and cluster tool system for atomic layer deposition |
JP4388627B2 (ja) * | 1999-07-05 | 2009-12-24 | 東京エレクトロン株式会社 | 処理装置 |
JP4178776B2 (ja) * | 2001-09-03 | 2008-11-12 | 東京エレクトロン株式会社 | 成膜方法 |
KR100450068B1 (ko) * | 2001-11-23 | 2004-09-24 | 주성엔지니어링(주) | Cvd 장치의 멀티섹터 평판형 샤워헤드 |
US6932871B2 (en) * | 2002-04-16 | 2005-08-23 | Applied Materials, Inc. | Multi-station deposition apparatus and method |
CN1777696B (zh) * | 2003-03-14 | 2011-04-20 | 杰努斯公司 | 用于原子层沉积的方法和设备 |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7708859B2 (en) * | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
US20060021703A1 (en) * | 2004-07-29 | 2006-02-02 | Applied Materials, Inc. | Dual gas faceplate for a showerhead in a semiconductor wafer processing system |
KR100752622B1 (ko) * | 2006-02-17 | 2007-08-30 | 한양대학교 산학협력단 | 원거리 플라즈마 발생장치 |
US8058585B2 (en) * | 2006-03-13 | 2011-11-15 | Tokyo Electron Limited | Plasma processing method, plasma processing apparatus and storage medium |
JP5069427B2 (ja) * | 2006-06-13 | 2012-11-07 | 北陸成型工業株式会社 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
KR101126536B1 (ko) * | 2007-10-31 | 2012-03-22 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 플라즈마 처리 시스템 및 플라즈마 처리 방법 |
JP2010065309A (ja) * | 2008-09-12 | 2010-03-25 | Tokyo Electron Ltd | Ti系膜の成膜方法および記憶媒体 |
US20100081285A1 (en) * | 2008-09-30 | 2010-04-01 | Tokyo Electron Limited | Apparatus and Method for Improving Photoresist Properties |
JP5206311B2 (ja) | 2008-10-24 | 2013-06-12 | 株式会社デンソー | 半導体装置の製造方法 |
TWI556309B (zh) * | 2009-06-19 | 2016-11-01 | 半導體能源研究所股份有限公司 | 電漿處理裝置,形成膜的方法,和薄膜電晶體的製造方法 |
JP2011216862A (ja) * | 2010-03-16 | 2011-10-27 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
JP5651451B2 (ja) * | 2010-03-16 | 2015-01-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
US8133349B1 (en) * | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
US9039909B2 (en) * | 2011-02-28 | 2015-05-26 | Tokyo Electron Limited | Plasma etching method, semiconductor device manufacturing method and computer-readable storage medium |
US8679358B2 (en) * | 2011-03-03 | 2014-03-25 | Tokyo Electron Limited | Plasma etching method and computer-readable storage medium |
CN202688435U (zh) * | 2012-05-11 | 2013-01-23 | 中微半导体设备(上海)有限公司 | 金属有机化学气相沉积反应器的气体分布装置及反应器 |
-
2014
- 2014-01-20 JP JP2014008113A patent/JP6219179B2/ja not_active Expired - Fee Related
-
2015
- 2015-01-19 KR KR1020150008665A patent/KR102264005B1/ko active IP Right Grant
- 2015-01-19 EP EP15151662.2A patent/EP2897156B1/en not_active Not-in-force
- 2015-01-19 TW TW104101611A patent/TWI643260B/zh not_active IP Right Cessation
- 2015-01-20 US US14/600,224 patent/US20150206713A1/en not_active Abandoned
-
2017
- 2017-12-26 US US15/854,066 patent/US20180122620A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2897156B1 (en) | 2017-10-18 |
KR102264005B1 (ko) | 2021-06-11 |
TW201535511A (zh) | 2015-09-16 |
US20150206713A1 (en) | 2015-07-23 |
EP2897156A1 (en) | 2015-07-22 |
US20180122620A1 (en) | 2018-05-03 |
JP2015138810A (ja) | 2015-07-30 |
KR20150087120A (ko) | 2015-07-29 |
TWI643260B (zh) | 2018-12-01 |
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