JP5069427B2 - シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 - Google Patents
シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 Download PDFInfo
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- JP5069427B2 JP5069427B2 JP2006163526A JP2006163526A JP5069427B2 JP 5069427 B2 JP5069427 B2 JP 5069427B2 JP 2006163526 A JP2006163526 A JP 2006163526A JP 2006163526 A JP2006163526 A JP 2006163526A JP 5069427 B2 JP5069427 B2 JP 5069427B2
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Description
102 処理室
103 被処理基板
104 保持台
105 シャワープレート
106 シール用のOリング
107 壁面
108 シール用のOリング
109 リング状空間
110 ガス導入ポート
111 横孔
112 縦孔
112a 第一の縦孔
112b 第二の縦孔
113 セラミックス部材
113a ガス放出孔
114 多孔質セラミックスガス流通体
115 スロット板
116 遅波板
117 同軸導波管
118 金属板
119 冷却用流路
120 下段シャワープレート
120a ガス流路
120b ノズル
120c 開口部
121 プロセスガス供給ポート
122 RF電源
Claims (5)
- プラズマ処理装置の処理室に配置され、前記処理室にプラズマを発生させるためにプラズマ励起用ガスを放出するシャワープレートにおいて、
シャワープレートを一体物とし、このシャワープレートに、プラズマ処理装置のガス導入ポートからのプラズマ励起用ガスを導入する横孔と、この横孔に連通してプラズマ励起用ガスを放出するための縦孔とを設け、前記横孔はシャワープレートの側面から中心部に向けて設けられていることを特徴とするシャワープレート。 - 横孔がシャワープレートの周方向に沿って複数設けられている請求項1に記載のシャワープレート。
- 請求項1または請求項2に記載のシャワープレートを処理室に配置したプラズマ処理装置。
- 請求項1または請求項2に記載のシャワープレートを用いてプラズマ励起用ガスをプラズマ処理装置内に供給し、供給されたプラズマ励起用ガスをマイクロ波で励起してプラズマを発生させ、該プラズマを用いて酸化、窒化、酸窒化、CVD、エッチング、またはプラズマ照射を基板に対して施すプラズマ処理方法。
- 請求項4に記載のプラズマ処理方法によって基板を処理する工程を含む電子装置の製造方法。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006163526A JP5069427B2 (ja) | 2006-06-13 | 2006-06-13 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
PCT/JP2007/061858 WO2007145230A1 (ja) | 2006-06-13 | 2007-06-13 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
US12/304,289 US20090286405A1 (en) | 2006-06-13 | 2007-06-13 | Shower plate, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate |
TW096121393A TW200816278A (en) | 2006-06-13 | 2007-06-13 | Shower plate, plasma processing device using the same, plasma processing method and manufacturing method of electronic apparatus |
CN2007800202482A CN101461038B (zh) | 2006-06-13 | 2007-06-13 | 喷淋板、和使用它的等离子体处理装置及处理方法及电子装置的制造方法 |
KR1020087029973A KR101029089B1 (ko) | 2006-06-13 | 2007-06-13 | 샤워 플레이트, 이를 이용한 플라즈마 처리 장치, 플라즈마처리 방법 및 전자 장치의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2006163526A JP5069427B2 (ja) | 2006-06-13 | 2006-06-13 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2007335510A JP2007335510A (ja) | 2007-12-27 |
JP5069427B2 true JP5069427B2 (ja) | 2012-11-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2006163526A Expired - Fee Related JP5069427B2 (ja) | 2006-06-13 | 2006-06-13 | シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20090286405A1 (ja) |
JP (1) | JP5069427B2 (ja) |
KR (1) | KR101029089B1 (ja) |
CN (1) | CN101461038B (ja) |
TW (1) | TW200816278A (ja) |
WO (1) | WO2007145230A1 (ja) |
Families Citing this family (308)
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US20080254220A1 (en) * | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
JP2008047869A (ja) * | 2006-06-13 | 2008-02-28 | Hokuriku Seikei Kogyo Kk | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
JP5010234B2 (ja) | 2006-10-23 | 2012-08-29 | 北陸成型工業株式会社 | ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法 |
JP5103223B2 (ja) * | 2008-02-27 | 2012-12-19 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法 |
CN101740298B (zh) * | 2008-11-07 | 2012-07-25 | 东京毅力科创株式会社 | 等离子体处理装置及其构成部件 |
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JP2004228426A (ja) * | 2003-01-24 | 2004-08-12 | Mitsubishi Materials Corp | プラズマ処理装置用シャワープレートおよびその製造方法 |
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JP4686319B2 (ja) * | 2004-09-28 | 2011-05-25 | 株式会社 セルバック | Cvd装置 |
US20070277734A1 (en) * | 2006-05-30 | 2007-12-06 | Applied Materials, Inc. | Process chamber for dielectric gapfill |
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JP2007335510A (ja) | 2007-12-27 |
WO2007145230A1 (ja) | 2007-12-21 |
TWI353630B (ja) | 2011-12-01 |
US20090286405A1 (en) | 2009-11-19 |
KR101029089B1 (ko) | 2011-04-13 |
TW200816278A (en) | 2008-04-01 |
CN101461038A (zh) | 2009-06-17 |
KR20090012354A (ko) | 2009-02-03 |
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