CN101461038B - 喷淋板、和使用它的等离子体处理装置及处理方法及电子装置的制造方法 - Google Patents

喷淋板、和使用它的等离子体处理装置及处理方法及电子装置的制造方法 Download PDF

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CN101461038B
CN101461038B CN2007800202482A CN200780020248A CN101461038B CN 101461038 B CN101461038 B CN 101461038B CN 2007800202482 A CN2007800202482 A CN 2007800202482A CN 200780020248 A CN200780020248 A CN 200780020248A CN 101461038 B CN101461038 B CN 101461038B
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桶作正广
后藤哲也
大见忠弘
石桥清隆
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Abstract

本发明提供一种喷淋板、和使用它的等离子体处理装置及处理方法及电子装置的制造方法。该喷淋板不需要盖板。该喷淋板(105)配置在等离子体处理装置的处理室(102)中，为了在处理室(102)中产生等离子体而排出等离子体激励用气体，其中，将喷淋板(105)设为一体物，在该喷淋板(105)上设置用于导入来自等离子体处理装置的气体导入口(110)的等离子体激励用气体的横孔(111)、和与该横孔(111)相连通的纵孔(112)。

Description

喷淋板、和使用它的等离子体处理装置及处理方法及电子装置的制造方法
技术领域
本发明涉及在等离子体处理装置、特别是使用在微波等离子体处理装置中使用的喷淋板、和使用了该喷淋板的等离子体处理装置、等离子体处理方法以及电子装置的制造方法。
背景技术
等离子体处理工序以及等离子体处理装置对于制造近年的被称作所谓的深亚微米元件或深亚四分之一微米元件的具有0.1μm、或0.1μm以下的栅极长的超微细化半导体装置、对于制造包含液晶显示装置的高分辨率平面显示装置是不可或缺的。
作为用于制造上述半导体装置、液晶显示装置的等离子体处理装置，自以往就一直使用各种的等离子体激励方式，特别是通常使用平行平板型高频激励等离子体处理装置或电感耦合型等离子体处理装置。
优选等离子体处理装置形成电子密度高、均匀的等离子体。但是，由于上述以往的等离子体处理装置形成的等离子体不均匀，并且电子密度高的区域受限定，因此具有很难以较大的处理速度、即生产率对被处理基板的整个面进行均匀的处理的问题。
该问题特别是在处理较大直径的基板的情况下成为严重缺陷，而且以往的等离子体处理装置存在电子温度高、形成在被处理基板上的半导体元件发生损坏、另外因飞溅到处理室壁上导致严重的金属污染等若干重大的问题，一直难于满足进一步提高半导体装置、液晶显示装置的微细化、生产率的要求。
针对上述问题，提出了不使用直流磁场、而是使用利用微波电场激励的高密度等离子体的微波等离子体处理装置。该装置如专利文献1所述为如下结构：自具有为了产生均匀微波而排列的许多个缝隙的平面状天线(径向线缝隙天线)向处理室内放射微波，利用该微波电场电离处理室内的气体从而激励等离子体。
利用该等离子体处理装置激励的微波等离子体能够遍及天线正下方的广阔区域地实现高等离子体密度，从而可以在短时间内进行均匀的等离子体处理。而且，由于是利用微波激励等离子体，因此电子温度较低，能够避免被处理基板的损坏、金属污染。并且，由于还能够在大面积的基板上激励均匀的等离子体，因此也容易应对使用了大口径半导体基板的半导体装置的制造工序、大型液晶显示装置的制造。
在上述等离子体处理装置中，通常，为了向处理室内均匀地供给等离子体激励用气体，使用喷淋板。
以往的喷淋板如专利文献2所述，由喷淋板主体和盖板构成，借助密封用的O型密封圈粘合喷淋板主体和盖板，利用设在盖板或喷淋板主体上的槽形成气体充填空间，利用与该气体充填空间相连通的气体排出孔排出气体。
但是，上述结构的喷淋板存在下述问题。
首先，在喷淋板的维护性以及等离子体的稳定维持性方面存在问题。即、在为了对喷淋板进行清洁等维护而将其拆下时，分别吊起喷淋板主体和盖板、或为了同时将它们吊起而需要利用特殊的夹具将它们一体化，因此其吊起作业、夹具的安装费时费力。另外，在为了将喷淋板主体和盖板一体化而预先安装夹具并将夹具配置在处理室内时，因夹具的存在损坏等离子体的稳定维持性。
另外，即使不是预先将喷淋板主体和盖板一体化、而是要使用特殊的吊起夹具将它们一起吊起，为了将吊起夹具卡定在喷淋板主体和盖板上需要在喷淋板主体和盖板上加工缺口等，而加工缺口等也要费时费力，并且因该缺口等的存在而损坏喷淋板主体和盖板、或破坏等离子体的稳定维持性。而且，吊起作业也很难，且在进行吊起作业时招致喷淋板的变形的可能性很高。在喷淋板产生变形时，还是会破坏等离子体的稳定维持性。
另外，在以往的喷淋板中，需要对喷淋板主体和盖板进行对位，在进行维护时对位作业费时费力。在对位不充分时破坏产生的等离子体的稳定维持性。
并且，以往的喷淋板由于将喷淋板主体和盖板粘合起来，因此如上所述使用密封用的O型密封圈。虽然使用微波损失较低的O型密封圈为该密封用的O型密封圈，但是由于喷淋板内的微波电场较强，因此有时在密封用的O型密封圈局部发生异常放电、或在喷淋板过热时O型密封圈烧焦。当然在O型密封圈烧焦时，因其密封性被损坏，届时需要维护。另外，喷淋板内的异常放电会损坏喷淋板。
专利文献1：日本特开平9-63793号公报
专利文献2：日本特开2002-299240号公报
发明内容
总而言之，本发明提供一种解决了上述问题点的喷淋板。具体而言，在于提供一种不需要盖板的喷淋板。
本发明的另一课题在于提供一种维护性以及等离子体的稳定维持性优秀的喷淋板。
另一课题还在于防止喷淋板内发生异常放电。
另外，另一课题还在于消除伴随密封用O型密封圈的烧焦的维护的必要性。
本发明提供一种喷淋板，其配置在等离子体处理装置的处理室中，为了在处理室中产生等离子体而排出等离子体激励用气体，其中，该喷淋板是将喷淋板主体和盖板一体化而形成的。即、将喷淋板设为一体物，在该喷淋板上设置用于导入来自等离子体处理装置的气体导入口的等离子体激励用气体的横孔、和与该横孔相连通而用于排出等离子体激励用气体的纵孔。
这样，通过在一体物的喷淋板上设置用于导入来自等离子体处理装置的气体导入口的等离子体激励用气体的横孔，从而不需要以往喷淋板那样的相互独立的盖板。因而，不需要进行盖板和喷淋板主体的准确的对位作业，并且在清洁作业时容易进行拆卸、吊起，也提高了维护性。并且，由于不需要用于拆卸、吊起的特殊夹具，因此也不会因上述夹具破坏等离子体的稳定性。
然后，由于容易进行拆卸、吊起作业，因此在进行该作业时，能够防止发生喷淋板的变形这样的情况，从该点看来也能够防止等离子体的稳定性受到破坏。而且，也不需要用于粘合喷淋板主体和盖板的密封用O型密封圈，能够消除由该密封用O型密封圈导致发生的异常放电。当然，也没有烧焦密封用O型密封圈的问题。
在本发明的喷淋板中，优选横孔自喷淋板的侧面朝向中心部地设置，沿着喷淋板的周向以大致等间隔设置多个这样的横孔。
采用本发明，由于不需要以往喷淋板中的相互独立的盖板，且在清洁作业时容易拆卸、吊起，因此能够使维护性以及等离子体的稳定维持性得到提高。
另外，能够防止在喷淋板内发生异常放电，从而能够防止喷淋板的损坏，提高等离子体处理的品质、成品率。
附图说明
图1表示应用了本发明的微波等离子体处理装置。
图2表示俯视图1所示的喷淋板的横孔和纵孔的配置。
图3是表示图1所示的喷淋板的横孔和纵孔的配置的立体示意图。
图4详细表示图1所示的喷淋板的纵孔。
附图标记说明
101、排气口；102、处理室；103、被处理基板；104、保持台；105、喷淋板；106、密封用的O型密封圈；107、壁面；108、密封用的O型密封圈；109、环状空间；110、气体导入口；111、横孔；112、纵孔；112a、第一纵孔；112b、第二纵孔；113、陶瓷构件；113a、气体排出孔；114、多孔质陶瓷气体流通体；115、缝隙板；116、滞波板；117、同轴波导管；118、金属板；119、冷却用流路；120、下层喷淋板；120a、气体流路；120b、喷嘴；120c、开口部；121、处理气体供给口；122、RF电源。
具体实施方式
下面，根据实施例说明本发明的实施方式。
实施例
图1表示应用了本发明的微波等离子体处理装置。图示的微波等离子体处理装置具有借助多个排气口101进行排气的处理室102，在处理室102中配置有用于保持被处理基板103的保持台104。为了均匀地对处理室102内进行排气，处理室102在保持台104的周围规定出环状的空间，多个排气口101以与空间相连通的方式等间隔、即相对于被处理基板103轴对称地排列。利用该排气口101的排列，可以自排气口101均匀地对处理室102进行排气。
在处理室102的上部借助密封用的O型密封圈106在对应于保持台104上的被处理基板103的位置上、作为处理室102的外壁的一部分安装有作为直径是408mm、相对介电常数是9.8、且低微波介电损耗(优选介电损耗在1×10-3以下，更优选在5×10-4以下)的电介质的由氧化铝构成的喷淋板105。另外，在构成处理室102的壁面107上，在对应于喷淋板105的侧面的位置上设有由2根密封用的O型密封圈108和喷淋板105的侧面围起来的环状空间109。环状空间109与用于导入等离子体激励用气体的气体导入口110相连通。
另一方面，在喷淋板105的侧面、即一体物的喷淋板主体上朝向喷淋板105的中心方向横向地开设有直径1mm的许多个横孔111。同时，与该横孔111相连通地开设有连通处理室102的许多个(230个)纵孔112。
图2表示俯视喷淋板105的横孔111和纵孔112的配置。图3是表示横孔111和纵孔112的配置的立体示意图。横孔111自喷淋板105的侧面朝向中心部地设置，该横孔111沿喷淋板105的周向大致等间隔地设置多个，整体形态呈放射状。
另外，图4表示纵孔112的详细构造。纵孔12由设在处理室102侧的直径10mm、深10mm的第一纵孔112a、和进一步设在第一纵孔112a的前方(气体导入侧)的直径1mm的第二纵孔112b构成，与横孔111相连通。并且，在第一纵孔112a上从处理室102侧观察依次安装有陶瓷构件113和多孔质陶瓷气体流通体114；上述陶瓷构件113高5mm，由氧化铝挤压成型品构成，开设有多个直径50μm的气体排出孔113a；上述多孔质陶瓷气体流通体114为直径10mm、高5mm的圆柱状，具有在气体流通方向上连通的气孔。
以例如下述要点形成横孔11以及纵孔112。
首先，在形成横孔111时，在对烧结用原料粉末进行压粉成型而得到的生坯成形体的阶段，准备烧结收缩后的直径尺寸为
Figure G2007800202482D0007163312QIETU
1mm的尺寸的长钻。横孔111的长度尺寸如图2所示是长短不一的，当中最长的孔长短大约达250mm，因此长钻必须达到同等以上的长度，所以使用具有杨氏模量在500GPa以上的刚性的超硬合金材料较佳。在横孔的长度较短的情况下，利用由上述材料构成的短钻进行孔加工，在横孔的长度为细长的情况下，在利用短钻加工了预孔之后，利用长钻沿着该预孔进行加工，从而能够将同心度和真直度形成加工在2μm以内。
关于纵孔112，在同样利用烧结收缩后的尺寸为1mm的尺寸的超硬合金制的短钻加工了第二纵孔112b之后，再利用烧结收缩后的尺寸为10mm的尺寸的超硬合金工具对第一纵孔112a进行孔加工。
参照图1表示将等离子体激励用气体导向处理室的方法。自气体导入口110导入的等离子体激励用气体被导向环状空间109，并且经由横孔111、纵孔112最终自设在纵孔112的前端部分上的气体排出孔113a被导入处理室102中。
在喷淋板105的上表面设有用于放射微波的、开设有许多个缝隙的径向线缝隙天线的缝隙板15、用于使微波沿径向传播的滞波板116、以及用于将微波导入天线的同轴波导管117。另外，滞波板116由缝隙板115和金属板118夹持。在金属板118上设有冷却用流路119。
在该结构中，利用自缝隙板15放射的微波电离自喷淋板105供给的等离子体激励用气体，从而在喷淋板105的正下方数毫米的区域内产生高密度等离子体。产生的等离子体由于扩散而到达被处理基板103。自喷淋板105除了导入等离子体激励用气体之外，作为积极地产生自由基的气体，也可以导入氧气、氨气。
在图示的等离子体处理装置中，在处理室102中、喷淋板105和被处理基板103之间配置有由铝、不锈钢等导体构成的下层喷淋板120。该下层喷淋板120具有用于将自处理气体供给口121供给的处理气体导向处理室102内的被处理基板103的多个气体流路120a，利用形成在气体流路120a的与被处理基板103对应的面上的许多个喷嘴120b、将处理气体排出到下层喷淋板120与被处理基板103之间的空间。在此，作为处理气体，在进行Plasma-Enhance Chemical Vapor Deposition(PECVD，等离子增强化学汽相淀积)处理的情况下、在形成硅系的薄膜的情况下，导入硅烷气体、二硅烷气体，在形成低介电常数膜的情况下，导入C5F8气体。另外，作为处理气体，也可以是导入了有机金属气体的CVD(化学汽相淀积)。另外，在进行Reactive Ion Etching(RIE，反应离子腐蚀)处理的情况下、在进行硅氧化膜蚀刻的情况下，导入C5F8气体和氧气为处理气体，在蚀刻金属膜、硅的情况下，导入氯气、HBr气体为处理气体。在进行蚀刻时，在需要离子能量的情况下，借助电容器使RF电源122与设在上述保持台104内部的电极相连接，施加RF电力，从而使被处理基板103上产生自偏压电压。流动的处理气体的气体种类并不限定于上述气体、而是根据处理来设定流动的气体、压力。
在下层喷淋板120上的相邻的气体流路120a彼此之间设有开口部120c，该开口部120c的大小是使在下层喷淋板120的上部利用微波激励的等离子体因扩散而高效通过到被处理基板103和下层喷淋板120之间的空间中的程度。
另外，流进喷淋板105的热流通过暴露在高密度等离子体中，可利用经由缝隙板105、滞波板106、以及金属板118流向冷却用流路119的水等的制冷剂进行排热。
参照图4，在本实施例中的由氧化铝材料构成的圆柱状的陶瓷部件113上开设的多个气体排出孔113a的直径为50μm。该数值小于作为1012cm-3的高密度等离子体的衬层(sheath)厚度的40μm的2倍，但大于作为1013cm-3的高密度等离子体的衬层厚度的10μm的2倍。
另外，形成在与等离子体相接触的物体表面上的衬层的厚度d可用下式求得。
数1
d = 0.606 λ D ( 2 V 0 T e ) 3 / 4
在此，V0是等离子体与物体的电位(单位为V)，Te是电子温度(单位为eV)，λD是可用下式求得的德拜长度。
数2
λ D = ϵ 0 k T e n e e 2 = 7.43 × 10 3 T e [ eV ] n e [ m - 3 ] [ m ]
在此，ε0是真空的导磁率，k是玻尔滋曼常数，ne是等离子体的电子密度。
如表1所示，由于在等离子体的电子密度上升时德拜长度下降，因此从防止等离子体的逆流这一观点出发，可以说优选气体排出孔113a的孔径更小。
表1
Te＝2eV，VD＝12V
 
等离子体密度(cm-3) 德拜长度(mm) 衬层厚度(mm)
1013 0.003 0.01
1012 0.011 0.04
1011 0.033 0.13
1010 0.105 0.41
并且，将气体排出孔113a的长度设为比电子发生散射之前的平均距离即平均自由行程长的长度，从而可以急剧降低等离子体的逆流。表2表示电子的平均自由行程。平均自由行程与压力成反比，在0.1Torr时为4mm。实际上，由于气体排出孔113a的气体导入侧的压力较高，因此平均自由行程比4mm短，但在本实施例中，将直径为50μm的气体排出孔113a的长度设成5mm，比平均自由行程长。
表2
Ar气气氛中的电子的平均自由行程
 
压力(P)(Torr) 平均自由行程(λen)(mm)
10 0.04
1 0.4
0.1 4
λen(mm)＝0.4/P(Torr)
但是，由于平均自由行程毕竟是平均距离，因此从统计上看存在没有发生散射而行进了更长距离的电子。因此，在本实施例中，在气体排出孔113a的气体导入侧设置具有在流通方向上连通的气孔的多孔质陶瓷气体流通体114。
该多孔质陶瓷气体流通体114采用平均结晶粒子直径在10μm以下、更优选在5μm以下、气孔率为20～75％、最大气孔直径在75μm以下、弯曲强度在30MPa以上的材料。
为了抑制等离子体在气孔中逆流、在第二纵孔112b中发生异常放电，将气孔直径的大小设成在形成于喷淋板105正下方的高密度等离子体的衬层厚度的2倍以下，优选在衬层厚度以下。本实施例中的多孔质陶瓷气体流通体114利用连通的气孔可以确保气体的流通性，其流通路径弯曲成Z字形，而且介于其中存在有许多个5μm以下、即使大也是在10μm以下的狭路，该狭路的大小在10μm以下，与作为1013cm-3的高密度等离子体的衬层厚度的10μm是相同程度或低于该衬层厚度。通过上述设置，对于1013cm-3的高密度等离子体也可使用本喷淋板。
采用具有上述结构的喷淋板105，通过在喷淋板主体上设置用于导入来自气体导入口110的气体的横孔111，从而不需要以往的喷淋板中的相互独立的盖板。因而，在进行清洁作业时容易拆卸、吊起，还提高了维护性。并且，由于不需要用于拆卸、吊起的特殊夹具，因此也不会因上述夹具而损坏等离子体的稳定性。然后，由于容易进行拆卸、吊起作业，因此能够防止在进行上述作业时发生喷淋板的变形这样的情况，从该点来看还能够防止等离子体的稳定性受到损坏。而且，也不需要用于粘合喷淋板主体和盖板的密封用O型密封圈，能够消除因该密封用O型密封圈引起的异常放电。
另外，在本实施例中，通过在气体排出孔113a的上游侧设置多孔质陶瓷气体流通体114，能够防止等离子体在纵孔112的气体导入侧发生逆流，从而能够抑制在喷淋板105内部发生异常放电、气体的堆积，因此，能够防止用于激励等离子体的微波的传输效率、成品率的下降。另外，不会阻碍与等离子体相接触的面的平坦度，可高效激励等离子体。而且，气体排出孔113a是利用挤压成型法等形成在与喷淋板105相互独立的陶瓷构件113上的，因此与利用孔加工在喷淋板上形成气体排出孔的情况相比，能够易于形成直径在0.1mm以下的微细且较长的气体排出孔。
另外，多孔质陶瓷流通体114和陶瓷构件113由介电损耗在1×10-3以下、更优选在5×10-4以下的高纯度陶瓷材料而形成。
另外，向被处理基板103均匀地供给等离子体激励用气体，并且自下层喷淋板120借助喷嘴120b将处理气体排向被处理基板103，结果能够均匀地形成自设在下层喷淋板120上的喷嘴120b朝向被处理基板103的处理气体的气流，处理气体返回到喷淋板105的上部的成分变少。结果减少了因暴露在处理气体中而过度解离、由此导致处理气体分子的分解，且即使处理气体是堆积性气体也难于发生因向喷淋板105的堆积而产生微波导入效率的降低等，因此能够缩短清洁时间、提高处理稳定性和再现性，从而提高生产率，并且可以进行高品质的基板处理。
另外，第一纵孔112a以及第二纵孔112b的个数、直径以及长度、开设在陶瓷构件113上的气体排出孔113a的个数、直径以及长度等并不限定于本实施例的数值。
工业上可利用性
本发明的喷淋板除了可利用在微波等离子体处理装置中，还可利用在平行平板型高频激励等离子体处理装置、电感耦合型等离子体处理装置等、各种等离子体处理装置中。

Claims (4)

1.一种喷淋板，该喷淋板配置在等离子体处理装置的处理室中，为了在处理室中产生等离子体而排出等离子体激励用气体，
将喷淋板设为一体物，在该喷淋板上设置用于导入来自等离子体处理装置的气体导入口的等离子体激励用气体的横孔、和与该横孔相连通，并用于排出等离子体激励用气体的纵孔，该横孔自该喷淋板的侧面朝向中心部地设置且该横孔沿着该喷淋板的周向设有多个。
2.一种等离子体处理装置，该等离子体处理装置将权利要求1所述的喷淋板配置在处理室中。
3.一种等离子体处理方法，该等离子体处理方法使用权利要求1所述的喷淋板，将等离子体激励用气体供给到等离子体处理装置中，利用微波激励所供给的等离子体激励用气体而产生等离子体，使用该等离子体对基板实施氧化、氮化、氧氮化、CVD、蚀刻、或等离子体照射。
4.一种电子装置的制造方法，包含利用权利要求3所述的等离子体处理方法来处理基板的工序。
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