TWI353630B - - Google Patents

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TWI353630B
TWI353630B TW096121393A TW96121393A TWI353630B TW I353630 B TWI353630 B TW I353630B TW 096121393 A TW096121393 A TW 096121393A TW 96121393 A TW96121393 A TW 96121393A TW I353630 B TWI353630 B TW I353630B
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Taiwan
Prior art keywords
plasma
shower plate
gas
plasma processing
hole
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TW096121393A
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TW200816278A (en
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Masahiro Okesaku
Tetsuya Goto
Tadahiro Omi
Kiyotaka Ishibashi
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Tokyo Electron Ltd
Univ Tohoku Nat Univ Corp
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Publication of TW200816278A publication Critical patent/TW200816278A/zh
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Publication of TWI353630B publication Critical patent/TWI353630B/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Description

1353630 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於電漿處理裝置,特別是使用於微波電漿 處理裝置之簇射板及使用該板之電漿處理裝置、電漿處理 方法及電子裝置之製造方法。 【先前技術】 電漿處理步驟及電漿處理裝置,係對近年來被稱爲所 謂深次微米元件或深次四分之一微米元件之具有0.1 μιη或 其以下之閘極長度之超微細化半導體裝置的製造、或包含 液晶顯示裝置之高解像度平面顯示裝置的製造爲不可或 缺。 作爲使用於該等半導體裝置或液晶顯示裝置之製造的 電漿處理裝置,以往雖使用各種電漿之激發方式,但一般 特別是爲平行平板型高頻激發電漿處理裝置或電感耦合型 電漿處理裝置。 電漿處理裝置最好是能形成電子密度高且均一之電 漿。然而,此等習知電漿處理裝置由於電漿形成不均勻且 高電子密度之區域受到限制,因此有難以以較高處理速度 亦即產量在被處理基板整面進行均一之製程的問題。 該問題特別是在處理大口徑基板時成爲嚴重的缺點, 而且習知電漿處理裝置係電子溫度較高,對形成於被處理 基板上之半導體元件會造成損傷,且因處理室壁之濺射導 致較大的金屬汙染等具有幾項重大之問題,因此逐漸難以 -5- (2) (2)1353630 滿足半導體裝置或液晶顯示裝置之進一步微細化與生產性 提升的要求。 對此,已有提案一種不使用直流磁場而使用藉由微波 電場激發之高密度電漿的微波電漿處理裝置。如專利文獻 1所揭示,此係具有下述構成者,亦即從備有配列成能產 生均一微波之多數個槽的平面狀天線(徑向線槽天線)將微 波放射於處理室內,並利用該微波電場將處理室內之氣體 電離以激發電漿。 利用該電漿處理裝置激發之微波電漿,可實現將較高 之電漿密度擴展至天線正下方之較廣區域,並能以短時間 進行均一之電漿處理。而且,由於係利用微波激發電漿, 因此電子溫度較低,可避免被處理基板上之損傷或金屬汚 染。此外,由於亦可於大面積基板上激發均一之電漿,因 此亦容易對應於使用大口徑半導體基板之半導體裝置的製 造步驟或大型液晶顯示裝置的製造。 該等電漿處理裝置中,通常爲將電漿激發用氣體均一 地供應於處理室內而使用簇射板。 習知簇射板,如專利文獻2所記載,係以簇射板本體 與蓋板所構成,透過密封用0型環使兩者密封,並利用 設於蓋板或簇射板本體之槽來形成氣體塡充空間,以從連 通於該氣體塡充空間之氣體放出孔放出氣體。 然而’於此方式構成之簇射板有以下之問題。 首先’有簇射板之維修性及電漿之穩定維持性的問 題。亦即,爲清潔等維修而拆卸簇射板時,由於在分別吊 (3) (3)1353630 起簇射板本體與蓋板,或同時吊起時必須以特殊治具進行 一體化’因此該吊起作業或治具之安裝較費時。又,當爲 使簾射板本體與蓋板一體化,而預先安裝治具並配置於處 理室內時’會因治具之存在損及電漿之穩定維持性。 又’不預先使簇射板本體與蓋板一體化,而欲使用特 殊吊掛治具一起吊起時,對簇射板本體與蓋板必須進行供 扣合吊掛治具之凹口等之加工,凹口等加工會費時且會因 凹口等之存在造成破損或損及電漿之穩定維持性。加上, 吊起作業亦困難,於吊起作業時導致簇射板變形之顧慮亦 高。當致簇射板變形時,還是會損及電漿之穩定維持性。 又,習知簇射板中,有進行簇射板本體與蓋板對準之 必要性,維修時對準作業會費時。若對準不完全時會損及 所產生之電漿的穩定維持性。 此外,習知簇射板,由於係將簇射板本體與蓋板密 接,因此如上述使用有Ο型環。該密封用0型環雖已使 用微波損耗較低者,但由於簇射板內之微波電場較強,因 此在密封用0型環部分會發生異常放電,或簇射板過熱 時有0型環燒焦之情形。當然在0型環燒焦時由於會損 及密封性,因此每次都必須維修。又,在簇射板內之異常 放電,亦會造成簇射板之損傷。 專利文獻1 :日本特開平9 — 63 793號公報 專利文獻2:日本特開2002-299240號公報 【發明內容】 -7- (4) (4)1353630 [發明欲解決之課題] 綜合而言,本發明係提供解除上述問題點的簇射板》 具體而言,係提供不須蓋板的簇射板。 其他課題係在於提供維修性及電漿之穩定維持性優越 的簇射板。 此外其他課題係在於防止在簇射板內異常放電的發 生。 進一步在於消除密封用〇型環燒焦所伴隨之維修的 必要性》 [用以解決課題之手段] 本發明在配置於電漿處理裝置之處理室,供於前述處 理室產生電漿而放出電漿激發用氣體之簇射板中,係將簇 射板本體與蓋板一體化。亦即,以簇射板爲一體物,於此 簇射板設有自電漿處理裝置之氣體導入口導入電漿激發用 氣體的橫孔,以及連通此橫孔並放出電漿激發用氣體的縱 孔。 如此’以將自電漿處理裝置之氣體導入口導入電漿激 發用氣體的橫孔’設於一體物之簇射板,即不須如習知簇 射板之別體的蓋板。是以’不須蓋板與簇射板本體之正確 對準作業’且清潔作業時易於拆卸或吊起,維修性亦提 升。此外,由於不須供拆卸或吊起之特殊治具,因此亦不 會因該等治具而損及電漿的穩定性。 此外,由於易於進行拆卸或吊起作業,因此可防止於 -8- (5) 1353630 該作業時發生簇射板變形之情形,從此點亦可防止損及電 漿的穩定性。加上,亦不須供使密封簇射板本體與蓋板密 接之密封用0型環,可消除因該密封用0型環所造成之 異常放電。當然,亦無密封用〇型環燒焦的問題。 本發明之簇射板中,橫孔係自簇射板之側面朝向中心 部設置,且該種橫孔沿簇射板之周緣方向以大致等間隔設 置複數個較佳。 [發明效果] 根據本發明,由於不須習知簇射板之別體的蓋板,且 清潔作業時易於拆卸或吊起,因此可使維修性及電漿之穩 定維持性提升。 又,可防止在簇射板內之異常放電的發生,藉此能防 止簇射板之損傷並提升電漿處理之品質或良率。
【實施方式】 以下,根據實施例說明本發明之實施形態。 實施例 圖1係表示應用本發明之微波電漿處理裝置。圖示之 微波電漿處理裝置具有透過複數個排氣口 101排氣之處理 室102,於處理室102中配置有保持被處理基板103之保 持台104。爲使處理室102排氣均勻,處理室102係於保 持台104之周圍界定有環狀空間,複數個排氣口 101以等 -9- (6) (6)1353630 間隔亦即相對於被處理基板1 03配列成軸對稱,俾連通於 空間。藉由該排氣口 101之配列,可使處理室102更均勻 地排氣至排氣口 1 0 1。 於處理室102之上部,在與保持台104上之被處理基 板103對應之位置,透過密封用0型環106安裝有直徑 爲408mm,由介質常數爲9.8且低微波介電損耗(介電損 耗在ΙχΙίΓ3以下5xl(T4以下更佳)之介電體之氧化鋁所構 成的簇射板105,作爲處理室102之外壁的一部分。又, 在構成處理室102之壁面107,於與簇射板105之側面對 應之位置,設有藉由2條密封用Ο型環108與簇射板105 之側面所圍成之環狀空間109»環狀空間109係與導入電 漿激發用氣體之氣體導入口 110連通。 另一方面,於簇射板1 05之側面亦即一體物之簇射板 本體,向簇射板105之中心方向開設有朝橫方向直徑 1mm之多數個橫孔111。同時,開設有多數個縱孔112連 通往處理室102以與該橫孔1 1 1連通。 圖2係表示從上面觀看簇射板105之橫孔111與縱孔 112的配置。圖3係表示橫孔111與縱孔112之配置的立 體示意圖。橫孔1 1 1係從簇射板1 05之側面向中心部設 置,該橫孔11 1以大致等間隔沿簇射板之周緣方向設置複 數個,整體呈放射狀之形狀。 又,圖4係表示縱孔1 1 2之詳細。縱孔1 1 2係由設於 處理室102側之直徑10mm、深度10mm的第1縱孔112a 與設於其更前端(氣體導入側)之直徑1 mm的第2縱孔 10- (7) (7)1353630 112b所構成,並連通於橫孔111。此外,於第1縱孔 112a從處理室102側觀看,依序裝設有由氧化鋁擠製成 型品構成且開設有複數個直徑50μιη之氣體放出孔113a 之高度5mm的陶瓷構件113、及直徑l〇mm高度5mm之 圓柱形之具有連通於氣體流通方向之氣孔的多孔性陶瓷氣 體流通體1 14。 橫孔1 1 1及縱孔1 1 2之形成係以例如以下要領進行。 首先,於形成橫孔111時,在將燒結用原料粉末壓粉 成型得到未加工成形體之階段,準備燒結收縮後直徑尺寸 爲Φ 1mm尺寸之長條鑽頭。橫孔111之長度尺寸,如圖2 所示,由於有各種長短其中最長之孔達到約2 5 0mm,因 此必須有與長條鑽頭同等以上之長度,適合使用具有彈性 模數爲500GPa以上之剛性的超硬合金材料。橫孔之長度 較短時,以由前述材料構成之短鑽頭進行孔加工,長條之 情形以短鑽頭進行準備孔加工後,以長條鑽頭沿該準備孔 加工,藉此可將同心度與真直度加工形成於2μιη以內。 在縱孔112,同樣地以燒結收縮後尺寸爲φ 1mm之超 硬合金製短鑽頭,對第2縱孔112b加工後,以燒結收縮 後尺寸爲Φ l〇mm之超硬工具,對第1縱孔112a進行孔加 工。 參照圖1以表示將電漿激發用氣體導入於處理室的方 法。自氣體導入口 110導入之電漿激發用氣體係導入於環 狀空間1 09,進一步透過橫孔1 1 1、縱孔1 1 2,最後從設 於縱孔112之前端部分的氣體放出孔n3a,導入於處理 -11 - (8) (8)1353630 室 102。 於簇射板105之上面,設置有供放射微波而開設有多 數個槽之徑向線槽天線的槽板115、供朝徑向傳播微波的 慢波板116、以及供將微波導入於天線的同軸導波管 117。又,慢波板116係藉由槽板115與金屬板118夾 入。於金屬板118設有冷卻用流路119。 此種構成中,利用從槽板115放射之微波,使來自簇 射板105所供應之電漿激發用氣體電離,藉此在簇射板 105正下方數厘米之區域產生高密度電漿。所產生之電漿 利用擴散到達被處理基板1〇3。除電漿激發用氣體外,亦 可從簇射板1〇5導入氧氣或氨氣’作爲積極產生徑向之氣 體。 在圖示之電漿處理裝置,處理室102中,於簇射板 105與被處理基板103之間,配置有由鋁或不銹鋼等之導 體構成之下段簇射板120。該下段簇射板120具備供將來 自製程氣體供給口 121所供應之製程氣體導入於處理室 102內之被處理基板103的複數個氣體流路120a,製程氣 體係藉由形成於與氣體流路120a之被處理基板103對應 之面的多數個噴嘴12 0b,放出至下段簇射板120與被處 理基板103間之空間。此處’作爲製程氣體’MPlasma- E n h a n c e d C h e m i c a 1 V a ρ 〇 r D e ρ 〇 s i t i ο n (P E C V D )製程時,進 行矽系之薄膜形成時係導入矽烷氣體或二矽烷氣體、形成 低介質常數膜時係導入C5F8氣體。又’亦可導入有機金 屬氣體之 CVD作爲製程氣體。又,Reactive Ion -12- 1353630 ⑼
Etching(RIE)製程時,矽氧化膜蝕刻時係導入C5F8氣體與 氧氣、金屬膜或矽之蝕刻時導入氯氣或HBr氣體。蝕刻 時須要離子能量時,以透過電容器將RF電源122連接於 設置在前述保持台104內部之電極並施加RF電力,於被 處理基板103上產生自偏壓。所送之製程氣體的氣體種 類,不限於上述,依照製程設定所送之氣體、壓力。 於下段簇射板120,在鄰接之氣體流路120a彼此 間,形成有開口部120c,其大小爲在下段簇射板120之 上部使利用微波激發之電漿藉由擴散以高效率通過被處理 基板1 03與下段簇射板1 20間之空間。 又,暴露於高密度電漿並流入於簇射板1〇5之熱流係 透過槽板115、慢波板116、以及金屬板118,藉由流入 冷卻用流路11 9之水等冷媒來排熱。 參照圖4,開設於本實施例之由氧化鋁材料構成之圓 柱形陶瓷構件113的複數個氣體放出孔113a’係設爲直 徑50μιη»該數値雖小於10l2cnT3之高密度電漿之層厚之 40μιη的2倍,但大於1 013 cm·3之高密度電漿之層厚之 1 0 μ m的2倍。 此外,形成於接觸電漿之物體表面之層厚度d係由下 式決定。 [數式1] 0.6064 勞) -13- 1353630 (ίο) 此處,vQ爲電漿與物體之電位差(單位爲V)、Te爲電 子溫度(單位爲eV)、λ〇爲下式所定之德拜長度》 [數式2] AD=j^ = 7'43xl〇3j^^ [ml 此處,ε。爲真空導磁率、k爲波次曼常數、ne爲電 漿之電子密度。 如表1所示,由於當電漿之電子密度上升時德拜長度 會減少,因此從防止電漿逆流之觀點來看,可說氣體放出 孔1 1 3 a最好更小。
Te= 2eV, V〇= 12V 電漿密度 德拜長度 層厚 (cm'3) (mm) (mm) 1 013 0.003 0.0 1 1 012 0.0 11 0.04 1 01 1 0.033 0.13 ΙΟ10 0.105 0.41 此外,藉由使氣體放出孔113a之長度較電子至散亂 爲止之平均距離的平均自由徑長’可急劇降低電漿之逆 流。表2表示電子之平均自由徑。平均自由徑係與壓力成 反比,O.lTorr時爲4mm。實際上,由於氣體放出孔113a -14- (11) 1353630 之氣體導入側壓力較高,因此平均自由徑雖較4mm短, 但本實施例中,將50μιη直徑之氣體放出孔113a的長度 設爲5mm,係設爲較平均自由徑長之値 [表2] 氬氣環境中之電子平均自由徑 壓力(Ρ) (Torr) 平均自由徑(λ en) (mm) 10 0.04 1 0.4 0.1 4 λ en(mm)= 0·4/Ρ(Τογγ)
然而,由於平均自由徑只是平均距離,因此從統計上 來看有行進更長距離而不散亂的電子。因此,本實施例 中,於氣體放出孔113a之氣體導入側,設置具有連通於 氣體流通方向之氣孔的多孔性陶瓷氣體流通體114。 該多孔性陶瓷氣體流通體1 1 4,係使用平均結晶粒徑 爲ΙΟμιη以下更隹爲5μιη以下、氣孔率爲20〜75%、最 大氣孔徑爲75μιη以下、彎曲強度爲30MPa以上之材料。 氣孔徑之大小由於係抑制電漿於氣孔中逆流並在第2 縱孔1 12b之異常放電,因此爲形成於簇射板1〇5正下方 之高密度電漿之層厚的2倍以下’最好爲層厚以下較佳。 本實施例之多孔性陶瓷氣體流通體114,係利用連通之氣 孔確保氣體之流通性,其流通路徑曲折成鋸齒狀’且多數 個5μιη以下較大亦在1〇μιη以下之瓶頸介於中間,該瓶頸 -15- (12) (12)1353630 之大小爲ΙΟμιη以下,與l〇13cm·3之高密度電漿之層厚之 ΙΟμιη爲同程度以下。藉由此方式,對l〇13cm_3之高密度 電漿亦可使用本簇射板。 根據具有以上構成之簇射板105,藉由將導入來自氣 體導入口 110之氣體的橫孔111設於簇射板本體,即不須 習知簇射板另外之蓋板。是以,清潔作業時容易拆卸及吊 起,維修性亦提升。此外,由於不須供拆卸或吊起之特殊 治具,因此亦不會因該等治具而損及電漿之穩定性。此 外,由於易於進行拆卸或吊起作業,因此可防止該作業時 簇射板變形之情況的發生,從此點亦可防止損及電漿之穩 定性。加上,亦不須供使簇射板本體與蓋板密接之密封用 〇型環,可消除因該密封用Ο型環所造成之異常放電。 又,本實施例中,由於藉由將多孔性陶瓷氣體流通體 114設於氣體放出孔U3a之上流側,因此可防止電漿逆 流至縱孔112之氣體導入側,並可抑制在簇射板105內部 之異常放電或氣體堆積之產生,所以可防止供激發電漿之 微波之傳送效率或良率的劣化。又,不會阻礙接觸電漿之 面的平坦度,能以高效率激發電漿。此外,由於氣體放出 孔113a係利用擠製成型法等形成於與簇射板105分開之 另外陶瓷構件1 1 3,因此與利用孔加工將氣體放出孔形成 於簇射板相較,易於形成直徑爲0.1 mm以下之微細且較 長的氣體放出孔。 此外,多孔性陶瓷氣體流通體1 1 4與陶瓷構件1 1 3, 係以介電損耗在lxl 0·3以下,更佳爲5x1 0·4以下之高純 -16- (13) (13)1353630 度陶瓷材料形成。 又,對被處理基板103均一地進行電漿激發用氣體供 應,並進一步從下段簇射板120透過噴嘴120b對被處理 基板103放出製程氣體之結果,即均勻地形成製程氣體從 設於下段簇射板120之噴嘴120b流向被處理基板103, 並減少製程氣體流回簇射板105上部之成分。其結果,減 少因暴露於高密度電漿而過度解離所造成之製程氣體分子 的分解,且即使製程氣體爲堆積性氣體,由於亦不易引起 因堆積於簇射板105而導致微波導入效率劣化等,因此可 縮短清潔時間、提高製程穩定性及再現性以提升生產性, 且可進行高品質之基板處理。 此外,第1縱孔112a及第2縱孔112b之個數、直 徑、以及長度,開設於陶瓷構件113之氣體放出孔113a 之個數、直徑、以及長度等,並不限於本實施例之數値。 本發明之簇射板,除微波電漿處理裝置外,亦可利用 於平行平板型高頻激發電漿處理裝置、電感耦合型電漿處 理裝置等各種電漿處理裝置。 【圖式簡單說明】 [圖1]係表示應用本發明之微波電漿處理裝置。 [圖2]係表示從上面觀看圖i所示之簇射板之橫孔與 縱孔的配置。 [圖3 ]係表示圖1所示之簇射板之橫孔與縱孔之配置 的立體示意圖。 -17- (14) (14)1353630 [圖4]係表示圖1所示之簇射板之縱孔的詳細。 【主要元件符號說明】 1 0 1 :排氣口 1 02 :處理室 103 :被處理基板 104 :保持台 1 〇 5 :簇射板 106:密封用Ο型環 1 07 :壁面 108:密封用Ο型環 109 :環狀空間 1 10 :氣體導入口 111 :橫孔 1 1 2 :縱孔 1 1 2 a :第1縱孔 1 12b :第2縱孔 1 1 3 :陶瓷構件 1 1 3 a :氣體放出孔 1 1 4 :多孔性陶瓷氣體流通體 115 :槽板 1 1 6 :慢波板 1 1 7 :同軸導波管 1 1 8 :金屬板 -18- (15) (15)1353630 1 1 9 :冷卻用流路 120 :下段簇射板 120a :氣體流路 120b :噴嘴 1 2 0 c :開口部 121 :製程氣體供給口 122 : RF電源

Claims (1)

1353630 L”_為量 ~專利申請案中文申請專利範圍修正本 民國100年3月烙日修正 申請專利範圍 1. —種簇射板,係配置於電漿處理裝置之處理室, 供於前述處理室產生電漿而放出電漿激發用氣體,其特徵 爲_ 以簇射板爲一體物,於此簇射板設有自電漿處理裝置 之氣體導入口導入電漿激發用氣體的橫孔,以及連通此橫 孔並放出電漿激發用氣體的縱孔; 前述橫孔係自簇射板之側面朝向中心部設置。 進而此橫孔係沿簇射板之周緣方向設置複數個。 2. —種電漿處理裝置,其特徵爲: 將申請專利範圍第1項所記載之簇射板配置於處理 室。 3- 一種電漿處理方法,其特徵爲: 使用申請專利範圍第1項所記載之簇射板,將電漿激 發用氣體供應於電漿處理裝置內,將所供應之電漿激發用 氣體以微波激發以產生電漿,使用該電漿對基板施以氧 化、氮化、氮氧化、CVD、蝕刻、或電漿照射。 4. 一種電子裝置之製造方法,其特徵爲: 包含藉由申請專利範圍第3項所記載之電漿處理方法 以處理基板的步驟。
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JP5069427B2 (ja) 2012-11-07
CN101461038A (zh) 2009-06-17
JP2007335510A (ja) 2007-12-27
US20090286405A1 (en) 2009-11-19
TW200816278A (en) 2008-04-01
WO2007145230A1 (ja) 2007-12-21
KR101029089B1 (ko) 2011-04-13
CN101461038B (zh) 2012-03-28

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