TWI353630B - - Google Patents

Download PDF

Info

Publication number
TWI353630B
TWI353630B TW096121393A TW96121393A TWI353630B TW I353630 B TWI353630 B TW I353630B TW 096121393 A TW096121393 A TW 096121393A TW 96121393 A TW96121393 A TW 96121393A TW I353630 B TWI353630 B TW I353630B
Authority
TW
Taiwan
Prior art keywords
plasma
shower plate
gas
plasma processing
hole
Prior art date
Application number
TW096121393A
Other languages
English (en)
Other versions
TW200816278A (en
Inventor
Masahiro Okesaku
Tetsuya Goto
Tadahiro Omi
Kiyotaka Ishibashi
Original Assignee
Tokyo Electron Ltd
Univ Tohoku Nat Univ Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Univ Tohoku Nat Univ Corp filed Critical Tokyo Electron Ltd
Publication of TW200816278A publication Critical patent/TW200816278A/zh
Application granted granted Critical
Publication of TWI353630B publication Critical patent/TWI353630B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means
    • H01J37/32449Gas control, e.g. control of the gas flow
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45572Cooled nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3244Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)

Description

1353630 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於電漿處理裝置,特別是使用於微波電漿 處理裝置之簇射板及使用該板之電漿處理裝置、電漿處理 方法及電子裝置之製造方法。 【先前技術】 電漿處理步驟及電漿處理裝置,係對近年來被稱爲所 謂深次微米元件或深次四分之一微米元件之具有0.1 μιη或 其以下之閘極長度之超微細化半導體裝置的製造、或包含 液晶顯示裝置之高解像度平面顯示裝置的製造爲不可或 缺。 作爲使用於該等半導體裝置或液晶顯示裝置之製造的 電漿處理裝置,以往雖使用各種電漿之激發方式,但一般 特別是爲平行平板型高頻激發電漿處理裝置或電感耦合型 電漿處理裝置。 電漿處理裝置最好是能形成電子密度高且均一之電 漿。然而,此等習知電漿處理裝置由於電漿形成不均勻且 高電子密度之區域受到限制,因此有難以以較高處理速度 亦即產量在被處理基板整面進行均一之製程的問題。 該問題特別是在處理大口徑基板時成爲嚴重的缺點, 而且習知電漿處理裝置係電子溫度較高,對形成於被處理 基板上之半導體元件會造成損傷,且因處理室壁之濺射導 致較大的金屬汙染等具有幾項重大之問題,因此逐漸難以 -5- (2) (2)1353630 滿足半導體裝置或液晶顯示裝置之進一步微細化與生產性 提升的要求。 對此,已有提案一種不使用直流磁場而使用藉由微波 電場激發之高密度電漿的微波電漿處理裝置。如專利文獻 1所揭示,此係具有下述構成者,亦即從備有配列成能產 生均一微波之多數個槽的平面狀天線(徑向線槽天線)將微 波放射於處理室內,並利用該微波電場將處理室內之氣體 電離以激發電漿。 利用該電漿處理裝置激發之微波電漿,可實現將較高 之電漿密度擴展至天線正下方之較廣區域,並能以短時間 進行均一之電漿處理。而且,由於係利用微波激發電漿, 因此電子溫度較低,可避免被處理基板上之損傷或金屬汚 染。此外,由於亦可於大面積基板上激發均一之電漿,因 此亦容易對應於使用大口徑半導體基板之半導體裝置的製 造步驟或大型液晶顯示裝置的製造。 該等電漿處理裝置中,通常爲將電漿激發用氣體均一 地供應於處理室內而使用簇射板。 習知簇射板,如專利文獻2所記載,係以簇射板本體 與蓋板所構成,透過密封用0型環使兩者密封,並利用 設於蓋板或簇射板本體之槽來形成氣體塡充空間,以從連 通於該氣體塡充空間之氣體放出孔放出氣體。 然而’於此方式構成之簇射板有以下之問題。 首先’有簇射板之維修性及電漿之穩定維持性的問 題。亦即,爲清潔等維修而拆卸簇射板時,由於在分別吊 (3) (3)1353630 起簇射板本體與蓋板,或同時吊起時必須以特殊治具進行 一體化’因此該吊起作業或治具之安裝較費時。又,當爲 使簾射板本體與蓋板一體化,而預先安裝治具並配置於處 理室內時’會因治具之存在損及電漿之穩定維持性。 又’不預先使簇射板本體與蓋板一體化,而欲使用特 殊吊掛治具一起吊起時,對簇射板本體與蓋板必須進行供 扣合吊掛治具之凹口等之加工,凹口等加工會費時且會因 凹口等之存在造成破損或損及電漿之穩定維持性。加上, 吊起作業亦困難,於吊起作業時導致簇射板變形之顧慮亦 高。當致簇射板變形時,還是會損及電漿之穩定維持性。 又,習知簇射板中,有進行簇射板本體與蓋板對準之 必要性,維修時對準作業會費時。若對準不完全時會損及 所產生之電漿的穩定維持性。 此外,習知簇射板,由於係將簇射板本體與蓋板密 接,因此如上述使用有Ο型環。該密封用0型環雖已使 用微波損耗較低者,但由於簇射板內之微波電場較強,因 此在密封用0型環部分會發生異常放電,或簇射板過熱 時有0型環燒焦之情形。當然在0型環燒焦時由於會損 及密封性,因此每次都必須維修。又,在簇射板內之異常 放電,亦會造成簇射板之損傷。 專利文獻1 :日本特開平9 — 63 793號公報 專利文獻2:日本特開2002-299240號公報 【發明內容】 -7- (4) (4)1353630 [發明欲解決之課題] 綜合而言,本發明係提供解除上述問題點的簇射板》 具體而言,係提供不須蓋板的簇射板。 其他課題係在於提供維修性及電漿之穩定維持性優越 的簇射板。 此外其他課題係在於防止在簇射板內異常放電的發 生。 進一步在於消除密封用〇型環燒焦所伴隨之維修的 必要性》 [用以解決課題之手段] 本發明在配置於電漿處理裝置之處理室,供於前述處 理室產生電漿而放出電漿激發用氣體之簇射板中,係將簇 射板本體與蓋板一體化。亦即,以簇射板爲一體物,於此 簇射板設有自電漿處理裝置之氣體導入口導入電漿激發用 氣體的橫孔,以及連通此橫孔並放出電漿激發用氣體的縱 孔。 如此’以將自電漿處理裝置之氣體導入口導入電漿激 發用氣體的橫孔’設於一體物之簇射板,即不須如習知簇 射板之別體的蓋板。是以’不須蓋板與簇射板本體之正確 對準作業’且清潔作業時易於拆卸或吊起,維修性亦提 升。此外,由於不須供拆卸或吊起之特殊治具,因此亦不 會因該等治具而損及電漿的穩定性。 此外,由於易於進行拆卸或吊起作業,因此可防止於 -8- (5) 1353630 該作業時發生簇射板變形之情形,從此點亦可防止損及電 漿的穩定性。加上,亦不須供使密封簇射板本體與蓋板密 接之密封用0型環,可消除因該密封用0型環所造成之 異常放電。當然,亦無密封用〇型環燒焦的問題。 本發明之簇射板中,橫孔係自簇射板之側面朝向中心 部設置,且該種橫孔沿簇射板之周緣方向以大致等間隔設 置複數個較佳。 [發明效果] 根據本發明,由於不須習知簇射板之別體的蓋板,且 清潔作業時易於拆卸或吊起,因此可使維修性及電漿之穩 定維持性提升。 又,可防止在簇射板內之異常放電的發生,藉此能防 止簇射板之損傷並提升電漿處理之品質或良率。
【實施方式】 以下,根據實施例說明本發明之實施形態。 實施例 圖1係表示應用本發明之微波電漿處理裝置。圖示之 微波電漿處理裝置具有透過複數個排氣口 101排氣之處理 室102,於處理室102中配置有保持被處理基板103之保 持台104。爲使處理室102排氣均勻,處理室102係於保 持台104之周圍界定有環狀空間,複數個排氣口 101以等 -9- (6) (6)1353630 間隔亦即相對於被處理基板1 03配列成軸對稱,俾連通於 空間。藉由該排氣口 101之配列,可使處理室102更均勻 地排氣至排氣口 1 0 1。 於處理室102之上部,在與保持台104上之被處理基 板103對應之位置,透過密封用0型環106安裝有直徑 爲408mm,由介質常數爲9.8且低微波介電損耗(介電損 耗在ΙχΙίΓ3以下5xl(T4以下更佳)之介電體之氧化鋁所構 成的簇射板105,作爲處理室102之外壁的一部分。又, 在構成處理室102之壁面107,於與簇射板105之側面對 應之位置,設有藉由2條密封用Ο型環108與簇射板105 之側面所圍成之環狀空間109»環狀空間109係與導入電 漿激發用氣體之氣體導入口 110連通。 另一方面,於簇射板1 05之側面亦即一體物之簇射板 本體,向簇射板105之中心方向開設有朝橫方向直徑 1mm之多數個橫孔111。同時,開設有多數個縱孔112連 通往處理室102以與該橫孔1 1 1連通。 圖2係表示從上面觀看簇射板105之橫孔111與縱孔 112的配置。圖3係表示橫孔111與縱孔112之配置的立 體示意圖。橫孔1 1 1係從簇射板1 05之側面向中心部設 置,該橫孔11 1以大致等間隔沿簇射板之周緣方向設置複 數個,整體呈放射狀之形狀。 又,圖4係表示縱孔1 1 2之詳細。縱孔1 1 2係由設於 處理室102側之直徑10mm、深度10mm的第1縱孔112a 與設於其更前端(氣體導入側)之直徑1 mm的第2縱孔 10- (7) (7)1353630 112b所構成,並連通於橫孔111。此外,於第1縱孔 112a從處理室102側觀看,依序裝設有由氧化鋁擠製成 型品構成且開設有複數個直徑50μιη之氣體放出孔113a 之高度5mm的陶瓷構件113、及直徑l〇mm高度5mm之 圓柱形之具有連通於氣體流通方向之氣孔的多孔性陶瓷氣 體流通體1 14。 橫孔1 1 1及縱孔1 1 2之形成係以例如以下要領進行。 首先,於形成橫孔111時,在將燒結用原料粉末壓粉 成型得到未加工成形體之階段,準備燒結收縮後直徑尺寸 爲Φ 1mm尺寸之長條鑽頭。橫孔111之長度尺寸,如圖2 所示,由於有各種長短其中最長之孔達到約2 5 0mm,因 此必須有與長條鑽頭同等以上之長度,適合使用具有彈性 模數爲500GPa以上之剛性的超硬合金材料。橫孔之長度 較短時,以由前述材料構成之短鑽頭進行孔加工,長條之 情形以短鑽頭進行準備孔加工後,以長條鑽頭沿該準備孔 加工,藉此可將同心度與真直度加工形成於2μιη以內。 在縱孔112,同樣地以燒結收縮後尺寸爲φ 1mm之超 硬合金製短鑽頭,對第2縱孔112b加工後,以燒結收縮 後尺寸爲Φ l〇mm之超硬工具,對第1縱孔112a進行孔加 工。 參照圖1以表示將電漿激發用氣體導入於處理室的方 法。自氣體導入口 110導入之電漿激發用氣體係導入於環 狀空間1 09,進一步透過橫孔1 1 1、縱孔1 1 2,最後從設 於縱孔112之前端部分的氣體放出孔n3a,導入於處理 -11 - (8) (8)1353630 室 102。 於簇射板105之上面,設置有供放射微波而開設有多 數個槽之徑向線槽天線的槽板115、供朝徑向傳播微波的 慢波板116、以及供將微波導入於天線的同軸導波管 117。又,慢波板116係藉由槽板115與金屬板118夾 入。於金屬板118設有冷卻用流路119。 此種構成中,利用從槽板115放射之微波,使來自簇 射板105所供應之電漿激發用氣體電離,藉此在簇射板 105正下方數厘米之區域產生高密度電漿。所產生之電漿 利用擴散到達被處理基板1〇3。除電漿激發用氣體外,亦 可從簇射板1〇5導入氧氣或氨氣’作爲積極產生徑向之氣 體。 在圖示之電漿處理裝置,處理室102中,於簇射板 105與被處理基板103之間,配置有由鋁或不銹鋼等之導 體構成之下段簇射板120。該下段簇射板120具備供將來 自製程氣體供給口 121所供應之製程氣體導入於處理室 102內之被處理基板103的複數個氣體流路120a,製程氣 體係藉由形成於與氣體流路120a之被處理基板103對應 之面的多數個噴嘴12 0b,放出至下段簇射板120與被處 理基板103間之空間。此處’作爲製程氣體’MPlasma- E n h a n c e d C h e m i c a 1 V a ρ 〇 r D e ρ 〇 s i t i ο n (P E C V D )製程時,進 行矽系之薄膜形成時係導入矽烷氣體或二矽烷氣體、形成 低介質常數膜時係導入C5F8氣體。又’亦可導入有機金 屬氣體之 CVD作爲製程氣體。又,Reactive Ion -12- 1353630 ⑼
Etching(RIE)製程時,矽氧化膜蝕刻時係導入C5F8氣體與 氧氣、金屬膜或矽之蝕刻時導入氯氣或HBr氣體。蝕刻 時須要離子能量時,以透過電容器將RF電源122連接於 設置在前述保持台104內部之電極並施加RF電力,於被 處理基板103上產生自偏壓。所送之製程氣體的氣體種 類,不限於上述,依照製程設定所送之氣體、壓力。 於下段簇射板120,在鄰接之氣體流路120a彼此 間,形成有開口部120c,其大小爲在下段簇射板120之 上部使利用微波激發之電漿藉由擴散以高效率通過被處理 基板1 03與下段簇射板1 20間之空間。 又,暴露於高密度電漿並流入於簇射板1〇5之熱流係 透過槽板115、慢波板116、以及金屬板118,藉由流入 冷卻用流路11 9之水等冷媒來排熱。 參照圖4,開設於本實施例之由氧化鋁材料構成之圓 柱形陶瓷構件113的複數個氣體放出孔113a’係設爲直 徑50μιη»該數値雖小於10l2cnT3之高密度電漿之層厚之 40μιη的2倍,但大於1 013 cm·3之高密度電漿之層厚之 1 0 μ m的2倍。 此外,形成於接觸電漿之物體表面之層厚度d係由下 式決定。 [數式1] 0.6064 勞) -13- 1353630 (ίο) 此處,vQ爲電漿與物體之電位差(單位爲V)、Te爲電 子溫度(單位爲eV)、λ〇爲下式所定之德拜長度》 [數式2] AD=j^ = 7'43xl〇3j^^ [ml 此處,ε。爲真空導磁率、k爲波次曼常數、ne爲電 漿之電子密度。 如表1所示,由於當電漿之電子密度上升時德拜長度 會減少,因此從防止電漿逆流之觀點來看,可說氣體放出 孔1 1 3 a最好更小。
Te= 2eV, V〇= 12V 電漿密度 德拜長度 層厚 (cm'3) (mm) (mm) 1 013 0.003 0.0 1 1 012 0.0 11 0.04 1 01 1 0.033 0.13 ΙΟ10 0.105 0.41 此外,藉由使氣體放出孔113a之長度較電子至散亂 爲止之平均距離的平均自由徑長’可急劇降低電漿之逆 流。表2表示電子之平均自由徑。平均自由徑係與壓力成 反比,O.lTorr時爲4mm。實際上,由於氣體放出孔113a -14- (11) 1353630 之氣體導入側壓力較高,因此平均自由徑雖較4mm短, 但本實施例中,將50μιη直徑之氣體放出孔113a的長度 設爲5mm,係設爲較平均自由徑長之値 [表2] 氬氣環境中之電子平均自由徑 壓力(Ρ) (Torr) 平均自由徑(λ en) (mm) 10 0.04 1 0.4 0.1 4 λ en(mm)= 0·4/Ρ(Τογγ)
然而,由於平均自由徑只是平均距離,因此從統計上 來看有行進更長距離而不散亂的電子。因此,本實施例 中,於氣體放出孔113a之氣體導入側,設置具有連通於 氣體流通方向之氣孔的多孔性陶瓷氣體流通體114。 該多孔性陶瓷氣體流通體1 1 4,係使用平均結晶粒徑 爲ΙΟμιη以下更隹爲5μιη以下、氣孔率爲20〜75%、最 大氣孔徑爲75μιη以下、彎曲強度爲30MPa以上之材料。 氣孔徑之大小由於係抑制電漿於氣孔中逆流並在第2 縱孔1 12b之異常放電,因此爲形成於簇射板1〇5正下方 之高密度電漿之層厚的2倍以下’最好爲層厚以下較佳。 本實施例之多孔性陶瓷氣體流通體114,係利用連通之氣 孔確保氣體之流通性,其流通路徑曲折成鋸齒狀’且多數 個5μιη以下較大亦在1〇μιη以下之瓶頸介於中間,該瓶頸 -15- (12) (12)1353630 之大小爲ΙΟμιη以下,與l〇13cm·3之高密度電漿之層厚之 ΙΟμιη爲同程度以下。藉由此方式,對l〇13cm_3之高密度 電漿亦可使用本簇射板。 根據具有以上構成之簇射板105,藉由將導入來自氣 體導入口 110之氣體的橫孔111設於簇射板本體,即不須 習知簇射板另外之蓋板。是以,清潔作業時容易拆卸及吊 起,維修性亦提升。此外,由於不須供拆卸或吊起之特殊 治具,因此亦不會因該等治具而損及電漿之穩定性。此 外,由於易於進行拆卸或吊起作業,因此可防止該作業時 簇射板變形之情況的發生,從此點亦可防止損及電漿之穩 定性。加上,亦不須供使簇射板本體與蓋板密接之密封用 〇型環,可消除因該密封用Ο型環所造成之異常放電。 又,本實施例中,由於藉由將多孔性陶瓷氣體流通體 114設於氣體放出孔U3a之上流側,因此可防止電漿逆 流至縱孔112之氣體導入側,並可抑制在簇射板105內部 之異常放電或氣體堆積之產生,所以可防止供激發電漿之 微波之傳送效率或良率的劣化。又,不會阻礙接觸電漿之 面的平坦度,能以高效率激發電漿。此外,由於氣體放出 孔113a係利用擠製成型法等形成於與簇射板105分開之 另外陶瓷構件1 1 3,因此與利用孔加工將氣體放出孔形成 於簇射板相較,易於形成直徑爲0.1 mm以下之微細且較 長的氣體放出孔。 此外,多孔性陶瓷氣體流通體1 1 4與陶瓷構件1 1 3, 係以介電損耗在lxl 0·3以下,更佳爲5x1 0·4以下之高純 -16- (13) (13)1353630 度陶瓷材料形成。 又,對被處理基板103均一地進行電漿激發用氣體供 應,並進一步從下段簇射板120透過噴嘴120b對被處理 基板103放出製程氣體之結果,即均勻地形成製程氣體從 設於下段簇射板120之噴嘴120b流向被處理基板103, 並減少製程氣體流回簇射板105上部之成分。其結果,減 少因暴露於高密度電漿而過度解離所造成之製程氣體分子 的分解,且即使製程氣體爲堆積性氣體,由於亦不易引起 因堆積於簇射板105而導致微波導入效率劣化等,因此可 縮短清潔時間、提高製程穩定性及再現性以提升生產性, 且可進行高品質之基板處理。 此外,第1縱孔112a及第2縱孔112b之個數、直 徑、以及長度,開設於陶瓷構件113之氣體放出孔113a 之個數、直徑、以及長度等,並不限於本實施例之數値。 本發明之簇射板,除微波電漿處理裝置外,亦可利用 於平行平板型高頻激發電漿處理裝置、電感耦合型電漿處 理裝置等各種電漿處理裝置。 【圖式簡單說明】 [圖1]係表示應用本發明之微波電漿處理裝置。 [圖2]係表示從上面觀看圖i所示之簇射板之橫孔與 縱孔的配置。 [圖3 ]係表示圖1所示之簇射板之橫孔與縱孔之配置 的立體示意圖。 -17- (14) (14)1353630 [圖4]係表示圖1所示之簇射板之縱孔的詳細。 【主要元件符號說明】 1 0 1 :排氣口 1 02 :處理室 103 :被處理基板 104 :保持台 1 〇 5 :簇射板 106:密封用Ο型環 1 07 :壁面 108:密封用Ο型環 109 :環狀空間 1 10 :氣體導入口 111 :橫孔 1 1 2 :縱孔 1 1 2 a :第1縱孔 1 12b :第2縱孔 1 1 3 :陶瓷構件 1 1 3 a :氣體放出孔 1 1 4 :多孔性陶瓷氣體流通體 115 :槽板 1 1 6 :慢波板 1 1 7 :同軸導波管 1 1 8 :金屬板 -18- (15) (15)1353630 1 1 9 :冷卻用流路 120 :下段簇射板 120a :氣體流路 120b :噴嘴 1 2 0 c :開口部 121 :製程氣體供給口 122 : RF電源

Claims (1)

1353630 L”_為量 ~專利申請案中文申請專利範圍修正本 民國100年3月烙日修正 申請專利範圍 1. —種簇射板,係配置於電漿處理裝置之處理室, 供於前述處理室產生電漿而放出電漿激發用氣體,其特徵 爲_ 以簇射板爲一體物,於此簇射板設有自電漿處理裝置 之氣體導入口導入電漿激發用氣體的橫孔,以及連通此橫 孔並放出電漿激發用氣體的縱孔; 前述橫孔係自簇射板之側面朝向中心部設置。 進而此橫孔係沿簇射板之周緣方向設置複數個。 2. —種電漿處理裝置,其特徵爲: 將申請專利範圍第1項所記載之簇射板配置於處理 室。 3- 一種電漿處理方法,其特徵爲: 使用申請專利範圍第1項所記載之簇射板,將電漿激 發用氣體供應於電漿處理裝置內,將所供應之電漿激發用 氣體以微波激發以產生電漿,使用該電漿對基板施以氧 化、氮化、氮氧化、CVD、蝕刻、或電漿照射。 4. 一種電子裝置之製造方法,其特徵爲: 包含藉由申請專利範圍第3項所記載之電漿處理方法 以處理基板的步驟。
TW096121393A 2006-06-13 2007-06-13 Shower plate, plasma processing device using the same, plasma processing method and manufacturing method of electronic apparatus TW200816278A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006163526A JP5069427B2 (ja) 2006-06-13 2006-06-13 シャワープレート、並びにそれを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法

Publications (2)

Publication Number Publication Date
TW200816278A TW200816278A (en) 2008-04-01
TWI353630B true TWI353630B (zh) 2011-12-01

Family

ID=38831744

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121393A TW200816278A (en) 2006-06-13 2007-06-13 Shower plate, plasma processing device using the same, plasma processing method and manufacturing method of electronic apparatus

Country Status (6)

Country Link
US (1) US20090286405A1 (zh)
JP (1) JP5069427B2 (zh)
KR (1) KR101029089B1 (zh)
CN (1) CN101461038B (zh)
TW (1) TW200816278A (zh)
WO (1) WO2007145230A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717074B (zh) * 2018-11-02 2021-01-21 荷蘭商Asm Ip私人控股有限公司 基板處理裝置及基板支撐單元

Families Citing this family (323)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080254220A1 (en) * 2006-01-20 2008-10-16 Tokyo Electron Limited Plasma processing apparatus
JP2008047869A (ja) * 2006-06-13 2008-02-28 Hokuriku Seikei Kogyo Kk シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
JP5010234B2 (ja) 2006-10-23 2012-08-29 北陸成型工業株式会社 ガス放出孔部材を一体焼結したシャワープレートおよびその製造方法
JP5103223B2 (ja) * 2008-02-27 2012-12-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置およびマイクロ波プラズマ処理装置の使用方法
CN101740298B (zh) * 2008-11-07 2012-07-25 东京毅力科创株式会社 等离子体处理装置及其构成部件
US9111729B2 (en) 2009-12-03 2015-08-18 Lam Research Corporation Small plasma chamber systems and methods
JP2011144412A (ja) * 2010-01-13 2011-07-28 Honda Motor Co Ltd プラズマ成膜装置
US9190289B2 (en) 2010-02-26 2015-11-17 Lam Research Corporation System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas
US9449793B2 (en) * 2010-08-06 2016-09-20 Lam Research Corporation Systems, methods and apparatus for choked flow element extraction
US9155181B2 (en) 2010-08-06 2015-10-06 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US8999104B2 (en) 2010-08-06 2015-04-07 Lam Research Corporation Systems, methods and apparatus for separate plasma source control
US9967965B2 (en) 2010-08-06 2018-05-08 Lam Research Corporation Distributed, concentric multi-zone plasma source systems, methods and apparatus
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US20130023129A1 (en) 2011-07-20 2013-01-24 Asm America, Inc. Pressure transmitter for a semiconductor processing environment
US9177762B2 (en) 2011-11-16 2015-11-03 Lam Research Corporation System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing
US10283325B2 (en) 2012-10-10 2019-05-07 Lam Research Corporation Distributed multi-zone plasma source systems, methods and apparatus
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10714315B2 (en) 2012-10-12 2020-07-14 Asm Ip Holdings B.V. Semiconductor reaction chamber showerhead
US20160376700A1 (en) 2013-02-01 2016-12-29 Asm Ip Holding B.V. System for treatment of deposition reactor
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
WO2015023435A1 (en) 2013-08-12 2015-02-19 Applied Materials, Inc. Recursive pumping for symmetrical gas exhaust to control critical dimension uniformity in plasma reactors
JP6219179B2 (ja) * 2014-01-20 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
US11015245B2 (en) 2014-03-19 2021-05-25 Asm Ip Holding B.V. Gas-phase reactor and system having exhaust plenum and components thereof
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US10941490B2 (en) 2014-10-07 2021-03-09 Asm Ip Holding B.V. Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US10276355B2 (en) 2015-03-12 2019-04-30 Asm Ip Holding B.V. Multi-zone reactor, system including the reactor, and method of using the same
US10458018B2 (en) 2015-06-26 2019-10-29 Asm Ip Holding B.V. Structures including metal carbide material, devices including the structures, and methods of forming same
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) * 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10211308B2 (en) 2015-10-21 2019-02-19 Asm Ip Holding B.V. NbMC layers
US11139308B2 (en) 2015-12-29 2021-10-05 Asm Ip Holding B.V. Atomic layer deposition of III-V compounds to form V-NAND devices
JP6643096B2 (ja) * 2016-01-18 2020-02-12 東京エレクトロン株式会社 プラズマ処理装置
US10529554B2 (en) 2016-02-19 2020-01-07 Asm Ip Holding B.V. Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches
US10367080B2 (en) 2016-05-02 2019-07-30 Asm Ip Holding B.V. Method of forming a germanium oxynitride film
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US11453943B2 (en) 2016-05-25 2022-09-27 Asm Ip Holding B.V. Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10612137B2 (en) 2016-07-08 2020-04-07 Asm Ip Holdings B.V. Organic reactants for atomic layer deposition
US9859151B1 (en) 2016-07-08 2018-01-02 Asm Ip Holding B.V. Selective film deposition method to form air gaps
US9887082B1 (en) 2016-07-28 2018-02-06 Asm Ip Holding B.V. Method and apparatus for filling a gap
US9812320B1 (en) 2016-07-28 2017-11-07 Asm Ip Holding B.V. Method and apparatus for filling a gap
KR102532607B1 (ko) 2016-07-28 2023-05-15 에이에스엠 아이피 홀딩 비.브이. 기판 가공 장치 및 그 동작 방법
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US11532757B2 (en) 2016-10-27 2022-12-20 Asm Ip Holding B.V. Deposition of charge trapping layers
US10714350B2 (en) 2016-11-01 2020-07-14 ASM IP Holdings, B.V. Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
KR102546317B1 (ko) 2016-11-15 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기체 공급 유닛 및 이를 포함하는 기판 처리 장치
KR20180068582A (ko) 2016-12-14 2018-06-22 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11581186B2 (en) 2016-12-15 2023-02-14 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus
US11447861B2 (en) 2016-12-15 2022-09-20 Asm Ip Holding B.V. Sequential infiltration synthesis apparatus and a method of forming a patterned structure
KR102700194B1 (ko) 2016-12-19 2024-08-28 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US10269558B2 (en) 2016-12-22 2019-04-23 Asm Ip Holding B.V. Method of forming a structure on a substrate
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US11390950B2 (en) 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10468261B2 (en) 2017-02-15 2019-11-05 Asm Ip Holding B.V. Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10529563B2 (en) 2017-03-29 2020-01-07 Asm Ip Holdings B.V. Method for forming doped metal oxide films on a substrate by cyclical deposition and related semiconductor device structures
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US10770286B2 (en) 2017-05-08 2020-09-08 Asm Ip Holdings B.V. Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US12040200B2 (en) 2017-06-20 2024-07-16 Asm Ip Holding B.V. Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US11306395B2 (en) 2017-06-28 2022-04-19 Asm Ip Holding B.V. Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
KR20190009245A (ko) 2017-07-18 2019-01-28 에이에스엠 아이피 홀딩 비.브이. 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물
US10541333B2 (en) 2017-07-19 2020-01-21 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US11018002B2 (en) 2017-07-19 2021-05-25 Asm Ip Holding B.V. Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en) 2017-07-19 2022-06-28 Asm Ip Holding B.V. Method for depositing a group IV semiconductor and related semiconductor device structures
US10590535B2 (en) 2017-07-26 2020-03-17 Asm Ip Holdings B.V. Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10692741B2 (en) 2017-08-08 2020-06-23 Asm Ip Holdings B.V. Radiation shield
US10770336B2 (en) 2017-08-08 2020-09-08 Asm Ip Holding B.V. Substrate lift mechanism and reactor including same
US11139191B2 (en) 2017-08-09 2021-10-05 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11769682B2 (en) 2017-08-09 2023-09-26 Asm Ip Holding B.V. Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11830730B2 (en) 2017-08-29 2023-11-28 Asm Ip Holding B.V. Layer forming method and apparatus
US11295980B2 (en) 2017-08-30 2022-04-05 Asm Ip Holding B.V. Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
KR102491945B1 (ko) 2017-08-30 2023-01-26 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11056344B2 (en) 2017-08-30 2021-07-06 Asm Ip Holding B.V. Layer forming method
US10658205B2 (en) 2017-09-28 2020-05-19 Asm Ip Holdings B.V. Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en) 2017-10-05 2019-09-03 Asm Ip Holding B.V. Method for selectively depositing a metallic film on a substrate
US10424487B2 (en) 2017-10-24 2019-09-24 Applied Materials, Inc. Atomic layer etching processes
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10923344B2 (en) 2017-10-30 2021-02-16 Asm Ip Holding B.V. Methods for forming a semiconductor structure and related semiconductor structures
US11022879B2 (en) 2017-11-24 2021-06-01 Asm Ip Holding B.V. Method of forming an enhanced unexposed photoresist layer
JP7214724B2 (ja) 2017-11-27 2023-01-30 エーエスエム アイピー ホールディング ビー.ブイ. バッチ炉で利用されるウェハカセットを収納するための収納装置
WO2019103610A1 (en) 2017-11-27 2019-05-31 Asm Ip Holding B.V. Apparatus including a clean mini environment
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10872771B2 (en) 2018-01-16 2020-12-22 Asm Ip Holding B. V. Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
TWI799494B (zh) 2018-01-19 2023-04-21 荷蘭商Asm 智慧財產控股公司 沈積方法
CN111630203A (zh) 2018-01-19 2020-09-04 Asm Ip私人控股有限公司 通过等离子体辅助沉积来沉积间隙填充层的方法
US11081345B2 (en) 2018-02-06 2021-08-03 Asm Ip Holding B.V. Method of post-deposition treatment for silicon oxide film
US10896820B2 (en) 2018-02-14 2021-01-19 Asm Ip Holding B.V. Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
JP7124098B2 (ja) 2018-02-14 2022-08-23 エーエスエム・アイピー・ホールディング・ベー・フェー 周期的堆積プロセスにより基材上にルテニウム含有膜を堆積させる方法
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
KR102636427B1 (ko) 2018-02-20 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 장치
US10975470B2 (en) 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US11473195B2 (en) 2018-03-01 2022-10-18 Asm Ip Holding B.V. Semiconductor processing apparatus and a method for processing a substrate
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US11629406B2 (en) 2018-03-09 2023-04-18 Asm Ip Holding B.V. Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US11114283B2 (en) 2018-03-16 2021-09-07 Asm Ip Holding B.V. Reactor, system including the reactor, and methods of manufacturing and using same
KR102646467B1 (ko) 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조
US11230766B2 (en) 2018-03-29 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
US11088002B2 (en) 2018-03-29 2021-08-10 Asm Ip Holding B.V. Substrate rack and a substrate processing system and method
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US12025484B2 (en) 2018-05-08 2024-07-02 Asm Ip Holding B.V. Thin film forming method
TWI843623B (zh) 2018-05-08 2024-05-21 荷蘭商Asm Ip私人控股有限公司 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構
KR102596988B1 (ko) 2018-05-28 2023-10-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법 및 그에 의해 제조된 장치
US11718913B2 (en) 2018-06-04 2023-08-08 Asm Ip Holding B.V. Gas distribution system and reactor system including same
TWI840362B (zh) 2018-06-04 2024-05-01 荷蘭商Asm Ip私人控股有限公司 水氣降低的晶圓處置腔室
US11286562B2 (en) 2018-06-08 2022-03-29 Asm Ip Holding B.V. Gas-phase chemical reactor and method of using same
US10797133B2 (en) 2018-06-21 2020-10-06 Asm Ip Holding B.V. Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
KR102568797B1 (ko) 2018-06-21 2023-08-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 시스템
TW202409324A (zh) 2018-06-27 2024-03-01 荷蘭商Asm Ip私人控股有限公司 用於形成含金屬材料之循環沉積製程
WO2020003000A1 (en) 2018-06-27 2020-01-02 Asm Ip Holding B.V. Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en) 2018-06-29 2020-04-07 ASM IP Holding, B.V. Temperature-controlled flange and reactor system including same
US10755922B2 (en) 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10388513B1 (en) 2018-07-03 2019-08-20 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11053591B2 (en) 2018-08-06 2021-07-06 Asm Ip Holding B.V. Multi-port gas injection system and reactor system including same
US11430674B2 (en) 2018-08-22 2022-08-30 Asm Ip Holding B.V. Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
KR102707956B1 (ko) 2018-09-11 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 박막 증착 방법
US11024523B2 (en) 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US11049751B2 (en) 2018-09-14 2021-06-29 Asm Ip Holding B.V. Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
TWI844567B (zh) 2018-10-01 2024-06-11 荷蘭商Asm Ip私人控股有限公司 基材保持裝置、含有此裝置之系統及其使用之方法
US11232963B2 (en) 2018-10-03 2022-01-25 Asm Ip Holding B.V. Substrate processing apparatus and method
KR102592699B1 (ko) 2018-10-08 2023-10-23 에이에스엠 아이피 홀딩 비.브이. 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
KR102546322B1 (ko) 2018-10-19 2023-06-21 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
KR102605121B1 (ko) 2018-10-19 2023-11-23 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치 및 기판 처리 방법
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
USD948463S1 (en) 2018-10-24 2022-04-12 Asm Ip Holding B.V. Susceptor for semiconductor substrate supporting apparatus
US11087997B2 (en) 2018-10-31 2021-08-10 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11572620B2 (en) 2018-11-06 2023-02-07 Asm Ip Holding B.V. Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en) 2018-11-07 2021-06-08 Asm Ip Holding B.V. Methods for depositing a boron doped silicon germanium film
US10818758B2 (en) 2018-11-16 2020-10-27 Asm Ip Holding B.V. Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en) 2018-11-16 2020-11-24 Asm Ip Holding B.V. Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US12040199B2 (en) 2018-11-28 2024-07-16 Asm Ip Holding B.V. Substrate processing apparatus for processing substrates
US11217444B2 (en) 2018-11-30 2022-01-04 Asm Ip Holding B.V. Method for forming an ultraviolet radiation responsive metal oxide-containing film
KR102636428B1 (ko) 2018-12-04 2024-02-13 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치를 세정하는 방법
US11158513B2 (en) 2018-12-13 2021-10-26 Asm Ip Holding B.V. Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
JP7504584B2 (ja) 2018-12-14 2024-06-24 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化ガリウムの選択的堆積を用いてデバイス構造体を形成する方法及びそのためのシステム
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
TWI819180B (zh) 2019-01-17 2023-10-21 荷蘭商Asm 智慧財產控股公司 藉由循環沈積製程於基板上形成含過渡金屬膜之方法
KR20200091543A (ko) 2019-01-22 2020-07-31 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
CN111524788B (zh) 2019-02-01 2023-11-24 Asm Ip私人控股有限公司 氧化硅的拓扑选择性膜形成的方法
TWI845607B (zh) 2019-02-20 2024-06-21 荷蘭商Asm Ip私人控股有限公司 用來填充形成於基材表面內之凹部的循環沉積方法及設備
JP2020136678A (ja) 2019-02-20 2020-08-31 エーエスエム・アイピー・ホールディング・ベー・フェー 基材表面内に形成された凹部を充填するための方法および装置
KR20200102357A (ko) 2019-02-20 2020-08-31 에이에스엠 아이피 홀딩 비.브이. 3-d nand 응용의 플러그 충진체 증착용 장치 및 방법
KR102626263B1 (ko) 2019-02-20 2024-01-16 에이에스엠 아이피 홀딩 비.브이. 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치
TWI842826B (zh) 2019-02-22 2024-05-21 荷蘭商Asm Ip私人控股有限公司 基材處理設備及處理基材之方法
US11742198B2 (en) 2019-03-08 2023-08-29 Asm Ip Holding B.V. Structure including SiOCN layer and method of forming same
KR20200108243A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. SiOC 층을 포함한 구조체 및 이의 형성 방법
KR20200108242A (ko) 2019-03-08 2020-09-17 에이에스엠 아이피 홀딩 비.브이. 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체
KR20200116033A (ko) 2019-03-28 2020-10-08 에이에스엠 아이피 홀딩 비.브이. 도어 개방기 및 이를 구비한 기판 처리 장치
KR20200116855A (ko) 2019-04-01 2020-10-13 에이에스엠 아이피 홀딩 비.브이. 반도체 소자를 제조하는 방법
KR20200123380A (ko) 2019-04-19 2020-10-29 에이에스엠 아이피 홀딩 비.브이. 층 형성 방법 및 장치
KR20200125453A (ko) 2019-04-24 2020-11-04 에이에스엠 아이피 홀딩 비.브이. 기상 반응기 시스템 및 이를 사용하는 방법
KR20200130121A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 딥 튜브가 있는 화학물질 공급원 용기
KR20200130118A (ko) 2019-05-07 2020-11-18 에이에스엠 아이피 홀딩 비.브이. 비정질 탄소 중합체 막을 개질하는 방법
KR20200130652A (ko) 2019-05-10 2020-11-19 에이에스엠 아이피 홀딩 비.브이. 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조
JP2020188254A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
JP2020188255A (ja) 2019-05-16 2020-11-19 エーエスエム アイピー ホールディング ビー.ブイ. ウェハボートハンドリング装置、縦型バッチ炉および方法
USD947913S1 (en) 2019-05-17 2022-04-05 Asm Ip Holding B.V. Susceptor shaft
USD975665S1 (en) 2019-05-17 2023-01-17 Asm Ip Holding B.V. Susceptor shaft
USD935572S1 (en) 2019-05-24 2021-11-09 Asm Ip Holding B.V. Gas channel plate
USD922229S1 (en) 2019-06-05 2021-06-15 Asm Ip Holding B.V. Device for controlling a temperature of a gas supply unit
KR20200141003A (ko) 2019-06-06 2020-12-17 에이에스엠 아이피 홀딩 비.브이. 가스 감지기를 포함하는 기상 반응기 시스템
KR20200143254A (ko) 2019-06-11 2020-12-23 에이에스엠 아이피 홀딩 비.브이. 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조
USD944946S1 (en) 2019-06-14 2022-03-01 Asm Ip Holding B.V. Shower plate
USD931978S1 (en) 2019-06-27 2021-09-28 Asm Ip Holding B.V. Showerhead vacuum transport
KR20210005515A (ko) 2019-07-03 2021-01-14 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
JP7499079B2 (ja) 2019-07-09 2024-06-13 エーエスエム・アイピー・ホールディング・ベー・フェー 同軸導波管を用いたプラズマ装置、基板処理方法
CN112216646A (zh) 2019-07-10 2021-01-12 Asm Ip私人控股有限公司 基板支撑组件及包括其的基板处理装置
KR20210010307A (ko) 2019-07-16 2021-01-27 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210010816A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 라디칼 보조 점화 플라즈마 시스템 및 방법
KR20210010820A (ko) 2019-07-17 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 실리콘 게르마늄 구조를 형성하는 방법
US11643724B2 (en) 2019-07-18 2023-05-09 Asm Ip Holding B.V. Method of forming structures using a neutral beam
KR20210010817A (ko) 2019-07-19 2021-01-28 에이에스엠 아이피 홀딩 비.브이. 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법
TWI839544B (zh) 2019-07-19 2024-04-21 荷蘭商Asm Ip私人控股有限公司 形成形貌受控的非晶碳聚合物膜之方法
CN112309843A (zh) 2019-07-29 2021-02-02 Asm Ip私人控股有限公司 实现高掺杂剂掺入的选择性沉积方法
CN112309899A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
CN112309900A (zh) 2019-07-30 2021-02-02 Asm Ip私人控股有限公司 基板处理设备
US11587815B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11587814B2 (en) 2019-07-31 2023-02-21 Asm Ip Holding B.V. Vertical batch furnace assembly
US11227782B2 (en) 2019-07-31 2022-01-18 Asm Ip Holding B.V. Vertical batch furnace assembly
CN118422165A (zh) 2019-08-05 2024-08-02 Asm Ip私人控股有限公司 用于化学源容器的液位传感器
USD965044S1 (en) 2019-08-19 2022-09-27 Asm Ip Holding B.V. Susceptor shaft
USD965524S1 (en) 2019-08-19 2022-10-04 Asm Ip Holding B.V. Susceptor support
JP2021031769A (ja) 2019-08-21 2021-03-01 エーエスエム アイピー ホールディング ビー.ブイ. 成膜原料混合ガス生成装置及び成膜装置
USD930782S1 (en) 2019-08-22 2021-09-14 Asm Ip Holding B.V. Gas distributor
KR20210024423A (ko) 2019-08-22 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 홀을 구비한 구조체를 형성하기 위한 방법
USD949319S1 (en) 2019-08-22 2022-04-19 Asm Ip Holding B.V. Exhaust duct
USD940837S1 (en) 2019-08-22 2022-01-11 Asm Ip Holding B.V. Electrode
USD979506S1 (en) 2019-08-22 2023-02-28 Asm Ip Holding B.V. Insulator
KR20210024420A (ko) 2019-08-23 2021-03-05 에이에스엠 아이피 홀딩 비.브이. 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법
US11286558B2 (en) 2019-08-23 2022-03-29 Asm Ip Holding B.V. Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
KR20210029090A (ko) 2019-09-04 2021-03-15 에이에스엠 아이피 홀딩 비.브이. 희생 캡핑 층을 이용한 선택적 증착 방법
KR20210029663A (ko) 2019-09-05 2021-03-16 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
US11562901B2 (en) 2019-09-25 2023-01-24 Asm Ip Holding B.V. Substrate processing method
CN112593212B (zh) 2019-10-02 2023-12-22 Asm Ip私人控股有限公司 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法
KR20210042810A (ko) 2019-10-08 2021-04-20 에이에스엠 아이피 홀딩 비.브이. 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법
TWI846953B (zh) 2019-10-08 2024-07-01 荷蘭商Asm Ip私人控股有限公司 基板處理裝置
KR20210043460A (ko) 2019-10-10 2021-04-21 에이에스엠 아이피 홀딩 비.브이. 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체
US12009241B2 (en) 2019-10-14 2024-06-11 Asm Ip Holding B.V. Vertical batch furnace assembly with detector to detect cassette
TWI834919B (zh) 2019-10-16 2024-03-11 荷蘭商Asm Ip私人控股有限公司 氧化矽之拓撲選擇性膜形成之方法
US11637014B2 (en) 2019-10-17 2023-04-25 Asm Ip Holding B.V. Methods for selective deposition of doped semiconductor material
KR20210047808A (ko) 2019-10-21 2021-04-30 에이에스엠 아이피 홀딩 비.브이. 막을 선택적으로 에칭하기 위한 장치 및 방법
KR20210050453A (ko) 2019-10-25 2021-05-07 에이에스엠 아이피 홀딩 비.브이. 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조
US11646205B2 (en) 2019-10-29 2023-05-09 Asm Ip Holding B.V. Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
KR20210054983A (ko) 2019-11-05 2021-05-14 에이에스엠 아이피 홀딩 비.브이. 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템
US11501968B2 (en) 2019-11-15 2022-11-15 Asm Ip Holding B.V. Method for providing a semiconductor device with silicon filled gaps
KR20210062561A (ko) 2019-11-20 2021-05-31 에이에스엠 아이피 홀딩 비.브이. 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템
KR20210065848A (ko) 2019-11-26 2021-06-04 에이에스엠 아이피 홀딩 비.브이. 제1 유전체 표면과 제2 금속성 표면을 포함한 기판 상에 타겟 막을 선택적으로 형성하기 위한 방법
CN112951697A (zh) 2019-11-26 2021-06-11 Asm Ip私人控股有限公司 基板处理设备
CN112885693A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
CN112885692A (zh) 2019-11-29 2021-06-01 Asm Ip私人控股有限公司 基板处理设备
JP7527928B2 (ja) 2019-12-02 2024-08-05 エーエスエム・アイピー・ホールディング・ベー・フェー 基板処理装置、基板処理方法
KR20210070898A (ko) 2019-12-04 2021-06-15 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
TW202125596A (zh) 2019-12-17 2021-07-01 荷蘭商Asm Ip私人控股有限公司 形成氮化釩層之方法以及包括該氮化釩層之結構
US11527403B2 (en) 2019-12-19 2022-12-13 Asm Ip Holding B.V. Methods for filling a gap feature on a substrate surface and related semiconductor structures
TW202140135A (zh) 2020-01-06 2021-11-01 荷蘭商Asm Ip私人控股有限公司 氣體供應總成以及閥板總成
KR20210089079A (ko) 2020-01-06 2021-07-15 에이에스엠 아이피 홀딩 비.브이. 채널형 리프트 핀
US11993847B2 (en) 2020-01-08 2024-05-28 Asm Ip Holding B.V. Injector
KR102675856B1 (ko) 2020-01-20 2024-06-17 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법 및 박막 표면 개질 방법
CN115315776A (zh) * 2020-01-29 2022-11-08 朗姆研究公司 具有斜向流动路径的气体分配面板
TW202130846A (zh) 2020-02-03 2021-08-16 荷蘭商Asm Ip私人控股有限公司 形成包括釩或銦層的結構之方法
TW202146882A (zh) 2020-02-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 驗證一物品之方法、用於驗證一物品之設備、及用於驗證一反應室之系統
US11776846B2 (en) 2020-02-07 2023-10-03 Asm Ip Holding B.V. Methods for depositing gap filling fluids and related systems and devices
US11781243B2 (en) 2020-02-17 2023-10-10 Asm Ip Holding B.V. Method for depositing low temperature phosphorous-doped silicon
TW202203344A (zh) 2020-02-28 2022-01-16 荷蘭商Asm Ip控股公司 專用於零件清潔的系統
KR20210116249A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법
KR20210116240A (ko) 2020-03-11 2021-09-27 에이에스엠 아이피 홀딩 비.브이. 조절성 접합부를 갖는 기판 핸들링 장치
CN113394086A (zh) 2020-03-12 2021-09-14 Asm Ip私人控股有限公司 用于制造具有目标拓扑轮廓的层结构的方法
KR20210124042A (ko) 2020-04-02 2021-10-14 에이에스엠 아이피 홀딩 비.브이. 박막 형성 방법
TW202146689A (zh) 2020-04-03 2021-12-16 荷蘭商Asm Ip控股公司 阻障層形成方法及半導體裝置的製造方法
TW202145344A (zh) 2020-04-08 2021-12-01 荷蘭商Asm Ip私人控股有限公司 用於選擇性蝕刻氧化矽膜之設備及方法
US11821078B2 (en) 2020-04-15 2023-11-21 Asm Ip Holding B.V. Method for forming precoat film and method for forming silicon-containing film
KR20210128343A (ko) 2020-04-15 2021-10-26 에이에스엠 아이피 홀딩 비.브이. 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조
US11996289B2 (en) 2020-04-16 2024-05-28 Asm Ip Holding B.V. Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
KR20210132600A (ko) 2020-04-24 2021-11-04 에이에스엠 아이피 홀딩 비.브이. 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템
TW202146831A (zh) 2020-04-24 2021-12-16 荷蘭商Asm Ip私人控股有限公司 垂直批式熔爐總成、及用於冷卻垂直批式熔爐之方法
JP2021172884A (ja) 2020-04-24 2021-11-01 エーエスエム・アイピー・ホールディング・ベー・フェー 窒化バナジウム含有層を形成する方法および窒化バナジウム含有層を含む構造体
KR20210134226A (ko) 2020-04-29 2021-11-09 에이에스엠 아이피 홀딩 비.브이. 고체 소스 전구체 용기
KR20210134869A (ko) 2020-05-01 2021-11-11 에이에스엠 아이피 홀딩 비.브이. Foup 핸들러를 이용한 foup의 빠른 교환
TW202147543A (zh) 2020-05-04 2021-12-16 荷蘭商Asm Ip私人控股有限公司 半導體處理系統
KR20210141379A (ko) 2020-05-13 2021-11-23 에이에스엠 아이피 홀딩 비.브이. 반응기 시스템용 레이저 정렬 고정구
TW202146699A (zh) 2020-05-15 2021-12-16 荷蘭商Asm Ip私人控股有限公司 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統
KR20210143653A (ko) 2020-05-19 2021-11-29 에이에스엠 아이피 홀딩 비.브이. 기판 처리 장치
KR20210145078A (ko) 2020-05-21 2021-12-01 에이에스엠 아이피 홀딩 비.브이. 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법
KR102702526B1 (ko) 2020-05-22 2024-09-03 에이에스엠 아이피 홀딩 비.브이. 과산화수소를 사용하여 박막을 증착하기 위한 장치
TW202201602A (zh) 2020-05-29 2022-01-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
TW202212620A (zh) 2020-06-02 2022-04-01 荷蘭商Asm Ip私人控股有限公司 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法
TW202218133A (zh) 2020-06-24 2022-05-01 荷蘭商Asm Ip私人控股有限公司 形成含矽層之方法
TW202217953A (zh) 2020-06-30 2022-05-01 荷蘭商Asm Ip私人控股有限公司 基板處理方法
KR102707957B1 (ko) 2020-07-08 2024-09-19 에이에스엠 아이피 홀딩 비.브이. 기판 처리 방법
TW202219628A (zh) 2020-07-17 2022-05-16 荷蘭商Asm Ip私人控股有限公司 用於光微影之結構與方法
TW202204662A (zh) 2020-07-20 2022-02-01 荷蘭商Asm Ip私人控股有限公司 用於沉積鉬層之方法及系統
US12040177B2 (en) 2020-08-18 2024-07-16 Asm Ip Holding B.V. Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
KR20220027026A (ko) 2020-08-26 2022-03-07 에이에스엠 아이피 홀딩 비.브이. 금속 실리콘 산화물 및 금속 실리콘 산질화물 층을 형성하기 위한 방법 및 시스템
TW202229601A (zh) 2020-08-27 2022-08-01 荷蘭商Asm Ip私人控股有限公司 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統
USD990534S1 (en) 2020-09-11 2023-06-27 Asm Ip Holding B.V. Weighted lift pin
USD1012873S1 (en) 2020-09-24 2024-01-30 Asm Ip Holding B.V. Electrode for semiconductor processing apparatus
US12009224B2 (en) 2020-09-29 2024-06-11 Asm Ip Holding B.V. Apparatus and method for etching metal nitrides
KR20220045900A (ko) 2020-10-06 2022-04-13 에이에스엠 아이피 홀딩 비.브이. 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치
CN114293174A (zh) 2020-10-07 2022-04-08 Asm Ip私人控股有限公司 气体供应单元和包括气体供应单元的衬底处理设备
TW202229613A (zh) 2020-10-14 2022-08-01 荷蘭商Asm Ip私人控股有限公司 於階梯式結構上沉積材料的方法
KR20220053482A (ko) 2020-10-22 2022-04-29 에이에스엠 아이피 홀딩 비.브이. 바나듐 금속을 증착하는 방법, 구조체, 소자 및 증착 어셈블리
TW202223136A (zh) 2020-10-28 2022-06-16 荷蘭商Asm Ip私人控股有限公司 用於在基板上形成層之方法、及半導體處理系統
TW202235649A (zh) 2020-11-24 2022-09-16 荷蘭商Asm Ip私人控股有限公司 填充間隙之方法與相關之系統及裝置
TW202235675A (zh) 2020-11-30 2022-09-16 荷蘭商Asm Ip私人控股有限公司 注入器、及基板處理設備
US11946137B2 (en) 2020-12-16 2024-04-02 Asm Ip Holding B.V. Runout and wobble measurement fixtures
TW202231903A (zh) 2020-12-22 2022-08-16 荷蘭商Asm Ip私人控股有限公司 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成
USD1023959S1 (en) 2021-05-11 2024-04-23 Asm Ip Holding B.V. Electrode for substrate processing apparatus
USD980813S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas flow control plate for substrate processing apparatus
USD980814S1 (en) 2021-05-11 2023-03-14 Asm Ip Holding B.V. Gas distributor for substrate processing apparatus
USD981973S1 (en) 2021-05-11 2023-03-28 Asm Ip Holding B.V. Reactor wall for substrate processing apparatus
USD990441S1 (en) 2021-09-07 2023-06-27 Asm Ip Holding B.V. Gas flow control plate

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0372080A (ja) * 1989-08-10 1991-03-27 Fujitsu Ltd プラズマ気相成長装置
JPH05144753A (ja) * 1991-11-21 1993-06-11 Nissin Electric Co Ltd 薄膜気相成長装置
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5665640A (en) * 1994-06-03 1997-09-09 Sony Corporation Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor
JPH08157296A (ja) * 1994-12-05 1996-06-18 Fujitsu Ltd 原料またはガスの供給装置
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
JP3501910B2 (ja) * 1996-04-23 2004-03-02 東京エレクトロン株式会社 プラズマ処理装置
US6106625A (en) * 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US5997649A (en) * 1998-04-09 1999-12-07 Tokyo Electron Limited Stacked showerhead assembly for delivering gases and RF power to a reaction chamber
JP4124383B2 (ja) * 1998-04-09 2008-07-23 財団法人国際科学振興財団 マイクロ波励起プラズマ装置用のシャワープレート及びマイクロ波励起プラズマ装置
JP3002448B1 (ja) * 1998-07-31 2000-01-24 国際電気株式会社 基板処理装置
JP2000290777A (ja) * 1999-04-07 2000-10-17 Tokyo Electron Ltd ガス処理装置、バッフル部材、及びガス処理方法
JP3668079B2 (ja) * 1999-05-31 2005-07-06 忠弘 大見 プラズマプロセス装置
JP2001070354A (ja) 1999-09-03 2001-03-21 Suzuki Motor Corp 電動車椅子の走行補助車輪装置
JP2001189308A (ja) * 1999-12-28 2001-07-10 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
US6797639B2 (en) * 2000-11-01 2004-09-28 Applied Materials Inc. Dielectric etch chamber with expanded process window
JP2002299240A (ja) * 2001-03-28 2002-10-11 Tadahiro Omi プラズマ処理装置
JP4799748B2 (ja) * 2001-03-28 2011-10-26 忠弘 大見 マイクロ波プラズマプロセス装置、プラズマ着火方法、プラズマ形成方法及びプラズマプロセス方法
EP1300876A4 (en) * 2001-03-28 2005-12-07 Tadahiro Ohmi PLASMA TREATMENT DEVICE
JP2004228426A (ja) * 2003-01-24 2004-08-12 Mitsubishi Materials Corp プラズマ処理装置用シャワープレートおよびその製造方法
US20040261712A1 (en) * 2003-04-25 2004-12-30 Daisuke Hayashi Plasma processing apparatus
JP4686319B2 (ja) * 2004-09-28 2011-05-25 株式会社 セルバック Cvd装置
US20070277734A1 (en) * 2006-05-30 2007-12-06 Applied Materials, Inc. Process chamber for dielectric gapfill

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI717074B (zh) * 2018-11-02 2021-01-21 荷蘭商Asm Ip私人控股有限公司 基板處理裝置及基板支撐單元

Also Published As

Publication number Publication date
TW200816278A (en) 2008-04-01
CN101461038B (zh) 2012-03-28
JP5069427B2 (ja) 2012-11-07
JP2007335510A (ja) 2007-12-27
US20090286405A1 (en) 2009-11-19
KR20090012354A (ko) 2009-02-03
KR101029089B1 (ko) 2011-04-13
WO2007145230A1 (ja) 2007-12-21
CN101461038A (zh) 2009-06-17

Similar Documents

Publication Publication Date Title
TWI353630B (zh)
TWI392021B (zh) And a gas release hole, and a method for manufacturing the same
KR101130111B1 (ko) 샤워 플레이트 및 그 제조 방법, 그리고 그 샤워 플레이트를 이용한 플라즈마 처리 장치, 플라즈마 처리 방법 및, 전자 장치의 제조 방법
JP5463536B2 (ja) シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法
KR100493748B1 (ko) 플라즈마 처리 장치 및 반도체 제조 장치
US9595425B2 (en) Antenna, dielectric window, plasma processing apparatus and plasma processing method
CN1229855C (zh) 等离子体处理装置
JP4540926B2 (ja) プラズマ処理装置
US20100300622A1 (en) Circular ring-shaped member for plasma process and plasma processing apparatus
KR100501777B1 (ko) 플라즈마 처리 장치
JP5604622B2 (ja) シャワープレートの製造方法
KR102507527B1 (ko) 정전 척을 구비하는 기판 처리 시스템
JP4583543B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP4689706B2 (ja) プラズマ処理装置
JPH0851082A (ja) 半導体製造装置のサセプタ

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees