KR100890493B1 - 반도체 제조 장치 - Google Patents
반도체 제조 장치 Download PDFInfo
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- KR100890493B1 KR100890493B1 KR1020087011399A KR20087011399A KR100890493B1 KR 100890493 B1 KR100890493 B1 KR 100890493B1 KR 1020087011399 A KR1020087011399 A KR 1020087011399A KR 20087011399 A KR20087011399 A KR 20087011399A KR 100890493 B1 KR100890493 B1 KR 100890493B1
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- Prior art keywords
- susceptor
- heater
- electrode
- substrate
- high frequency
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- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000003466 welding Methods 0.000 claims description 12
- 238000004891 communication Methods 0.000 claims description 6
- 238000007664 blowing Methods 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 26
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 21
- 239000010453 quartz Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 230000008569 process Effects 0.000 description 11
- 230000007246 mechanism Effects 0.000 description 10
- 229910052697 platinum Inorganic materials 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 230000003028 elevating effect Effects 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910000629 Rh alloy Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000003685 thermal hair damage Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021397 glassy carbon Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Resistance Heating (AREA)
Abstract
Description
Claims (3)
- 진공 용기에 처리 가스를 공급하면서 배기하여 기판을 처리하는 반도체 제조 장치에 있어서, 상기 기판을 유지하는 기판 유지 수단이 상기 진공 용기 내에 배치되어 있고, 상기 기판 유지 수단의 한쪽에는 상기 기판을 유지하는 기판 유지부가 마련되어 있고, 상기 기판 유지 수단의 내부에는 기판 가열 수단이 마련되어 있고, 상기 기판 가열 수단에 전력을 공급하는 배선이 상기 기판 유지 수단을 지지하는 샤프트를 통해 끼워져 있고, 상기 기판 유지 수단의 내부의 상기 기판 가열 수단이 설치된 공간 및 상기 샤프트의 내부는 대기에 연통되어 있고, 상기 기판 가열 수단 및 상기 배선은 내산화성을 가지는 재료로 형성되고, 상기 배선이 상기 기판 가열 수단과 동일한 재질이고 상기 기판 가열 수단으로부터 상기 기판 유지 수단의 외부로 연장되며, 상기 기판 가열 수단의 단자와 상기 배선은 용접에 의해서 접속되어 있는 것을 특징으로 하는 반도체 제조 장치.
- 제 1 항에 있어서,상기 기판 가열 수단과 상기 기판 유지 수단의 사이에, 공간이 마련되어 있는 것을 특징으로 하는반도체 제조 장치.
- 제 2 항에 있어서,상기 기판 가열 수단은, 상기 공간을 형성하는 벽과 간격을 사이에 두고 배치되는 것을 특징으로 하는반도체 제조 장치.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003113738 | 2003-04-18 | ||
JPJP-P-2003-00113738 | 2003-04-18 | ||
PCT/JP2004/004539 WO2004095560A1 (ja) | 2003-04-18 | 2004-03-30 | 半導体製造装置および半導体装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018431A Division KR20050115940A (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080050532A KR20080050532A (ko) | 2008-06-05 |
KR100890493B1 true KR100890493B1 (ko) | 2009-03-26 |
Family
ID=33307924
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087011399A KR100890493B1 (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 |
KR1020077008387A KR100747957B1 (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
KR1020057018431A KR20050115940A (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077008387A KR100747957B1 (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
KR1020057018431A KR20050115940A (ko) | 2003-04-18 | 2004-03-30 | 반도체 제조 장치 및 반도체 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
US (3) | US20060151117A1 (ko) |
JP (2) | JP4347295B2 (ko) |
KR (3) | KR100890493B1 (ko) |
WO (1) | WO2004095560A1 (ko) |
Families Citing this family (290)
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2004
- 2004-03-30 WO PCT/JP2004/004539 patent/WO2004095560A1/ja active Application Filing
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- 2004-03-30 KR KR1020087011399A patent/KR100890493B1/ko active IP Right Grant
- 2004-03-30 KR KR1020077008387A patent/KR100747957B1/ko active IP Right Grant
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JPH0778766A (ja) * | 1993-06-24 | 1995-03-20 | Tokyo Electron Ltd | ガス処理装置 |
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US7842160B2 (en) | 2010-11-30 |
WO2004095560A1 (ja) | 2004-11-04 |
US20090277588A1 (en) | 2009-11-12 |
JP4347295B2 (ja) | 2009-10-21 |
US20080223524A1 (en) | 2008-09-18 |
US8906161B2 (en) | 2014-12-09 |
JP2009010413A (ja) | 2009-01-15 |
KR100747957B1 (ko) | 2007-08-08 |
KR20080050532A (ko) | 2008-06-05 |
JPWO2004095560A1 (ja) | 2006-07-13 |
KR20050115940A (ko) | 2005-12-08 |
US20060151117A1 (en) | 2006-07-13 |
JP4961407B2 (ja) | 2012-06-27 |
KR20070057242A (ko) | 2007-06-04 |
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