JP4961407B2 - 半導体製造装置および半導体装置の製造方法 - Google Patents
半導体製造装置および半導体装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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Description
しかし、このような半導体製造装置にあっては、ヒータによる加熱効率が低いという問題点がある。
また、前記した半導体製造装置にあっては、ヒータによって被処理基板を加熱した際に、基板保持手段と高周波電極との熱膨張率の差により、高周波電極が破損するという問題点がある。
本発明の目的は、高周波電極の破損を防止することができる半導体製造装置を提供することにある。
このことにより、基板保持手段と基板加熱手段との間に熱膨張率の差があっても、基板加熱手段が破損するのを防止することができる。
このことにより、基板保持手段と高周波電極との間に熱膨張率の差があっても、高周波電極が破損するのを防止することができる。
本実施の形態において、本発明に係る半導体製造装置は、電界と磁界により高密度プラズマを生成できる変形マグネトロン型プラズマ源(Modified Magnetron Typed Plasma Source)を用いたプラズマ処理装置(以下、MMT装置と称する。)として構成されている。本実施の形態に係るMMT装置は半導体素子を含む集積回路装置が作り込まれる半導体ウエハ(以下、ウエハという。)にプラズマ処理するように構成されている。
MMT装置においては、気密性を確保した処理室にウエハが設置される。反応ガスは処理室にシャワープレートを介して導入される。処理室の圧力は所定の圧力に維持され、高周波電力が放電用電極に供給され、電界を形成されるとともに、磁界が形成されてマグネトロン放電が起こされる。放電用電極から放出された電子がドリフトしながらサイクロイド運動を続けて周回することにより、長寿命となって電離生成率を高めるので、高密度プラズマを生成できる。このように反応ガスを励起分解させて、MMT装置はウエハ表面を酸化または窒化等の拡散処理を施したり、ウエハ表面に薄膜を形成したり、ウエハ表面をエッチングする等、ウエハへ各種のプラズマ処理を施すことができる。
本実施の形態に係るMMT装置は処理室201を備えており、処理室201は第2の容器である下側容器211と、下側容器211の上に被せられる第1の容器である上側容器210とから形成されている。上側容器210はドーム型の酸化アルミニウムまたは石英で形成されており、下側容器211はアルミニウムで形成されている。ちなみに、後述するヒータ一体型の基板保持手段であるサセプタ217を石英または窒化アルミニウムで構成することによって、処理の際に膜中に取り込まれる金属汚染を低減している。
ウエハ200は処理炉202を構成する処理室201の外部からウエハを搬送する搬送手段(図示せず)によって処理室201に搬入され、サセプタ217の上に搬送される。この搬送動作の詳細は、次の通りである。
例えば、ウエハ200の表面に界面酸化防止膜としてのプラズマ窒化膜をMMT装置によって形成する場合の処理条件は、次の通りである。
また、酸化タンタル膜の膜質改善処理のためのプラズマ酸化処理をMMT装置によって実施する場合の処理条件は、次の通りである。
高周波電力は100〜500W、処理圧力は2〜100Pa、酸素ガス流量は100〜1000sccm、処理温度は25〜600℃、処理時間は1秒以上、である。
なお、コントローラ121により、高周波電源273の電力のON・OFF、整合器272の調整、バルブ243aの開閉、マスフローコントローラ241の流量、APC242の弁開度、バルブ243bの開閉、真空ポンプ246の起動・停止、サセプタ昇降機構268の昇降動作、ゲートバルブ244の開閉、サセプタ217に埋め込まれたヒータ3に高周波電力を印加する高周波電源への電力ON・OFFがそれぞれ制御される。
本実施の形態に係るサセプタ217は石英または窒化アルミニウムによって形成されている。サセプタ217は、例えば500℃以上の高温領域になる程サセプタ217内の温度差が大きくなり、強度を保つ必要が生じるので、石英が好適に用いられる。ちなみに、石英または窒化アルミニウムはいずれも、被処理基板であるウエハ200に対して金属汚染等の影響を与えない。
なお、溝8の間隔の値は適宜に選択されるべき値である。溝8は公知のローレット状加工やエンボス加工によって形成することができる。
また、空間8aを設けたことにより、大気雰囲気の進入の有無を考慮して、高周波電極2aの材質を選択すれば、酸化して強度が保てなくなることによる高周波電極2aの破損も防止することができる。
本実施の形態に係るMMT装置の全体構成およびサセプタの概略構成は、前述したMMT装置およびサセプタと同じである。
3 ヒータ
4 電極配線
5 ヒータ配線
6 シャフト
7 カバー
11 ヒータ設置空間
12 ヒータ配線挿通孔
13 電極設置空間
14 電極配線挿通孔
200 ウエハ
217 サセプタ
Claims (5)
- 真空容器に処理ガスを供給しつつ排気して基板を処理する半導体製造装置において、前記基板を保持する基板保持手段が前記真空容器内に配置されており、前記基板保持手段内部には高周波電極を設置する溝を有する空間が設けられ、前記高周波電極は前記空間を形成する壁と間隙を介して配置されており、前記空間は大気に連通されていることを特徴とする半導体製造装置。
- 前記高周波電極に接続される電極配線が前記高周波電極と同質材であり、前記高周波電極から前記基板保持手段の外部に延びて設けられてから前記高周波電極の端子に接続されていることを特徴とする請求項1記載の半導体製造装置。
- 前記高周波電極が白金から形成されていることを特徴とする請求項1記載の半導体製造装置。
- 前記高周波電極の電極配線が白金から形成されていることを特徴とする請求項1記載の半導体製造装置。
- 真空容器に処理ガスを供給しつつ排気して基板を処理する半導体製造装置において、前記基板を保持する基板保持手段が前記真空容器内に配置されており、前記基板保持手段内部には高周波電極を設置する溝を有する空間が設けられ、前記高周波電極は前記空間を形成する壁と間隙を介して配置されており、前記空間は大気に連通されていることを特徴とする半導体製造装置を用いた半導体装置の製造方法であって、
前記基板保持手段の片側に設けられた基板保持部に基板を保持させるステップと、前記真空容器に処理ガスを供給しつつ排気し、前記基板をプラズマ処理するステップと、を備えていることを特徴とする半導体装置の製造方法。
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WO2005093806A1 (ja) * | 2004-03-26 | 2005-10-06 | Hitachi Kokusai Electric Inc. | 半導体製造装置および半導体装置の製造方法 |
WO2006006391A1 (ja) * | 2004-06-28 | 2006-01-19 | Kyocera Corporation | ウェハ加熱装置と半導体製造装置 |
JP4578232B2 (ja) * | 2004-12-27 | 2010-11-10 | 株式会社日立国際電気 | 半導体製造装置及び半導体製造方法 |
CN100482584C (zh) * | 2005-10-21 | 2009-04-29 | 鸿富锦精密工业(深圳)有限公司 | 碳纳米管制备设备 |
TWI386516B (zh) * | 2005-10-28 | 2013-02-21 | Hon Hai Prec Ind Co Ltd | 奈米碳管製備設備 |
JP2007258585A (ja) * | 2006-03-24 | 2007-10-04 | Tokyo Electron Ltd | 基板載置機構および基板処理装置 |
JP4884180B2 (ja) * | 2006-11-21 | 2012-02-29 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US9394608B2 (en) | 2009-04-06 | 2016-07-19 | Asm America, Inc. | Semiconductor processing reactor and components thereof |
JP5453985B2 (ja) * | 2009-07-29 | 2014-03-26 | セイコーエプソン株式会社 | 支持台 |
US8802201B2 (en) | 2009-08-14 | 2014-08-12 | Asm America, Inc. | Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species |
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US8906161B2 (en) | 2014-12-09 |
JP2009010413A (ja) | 2009-01-15 |
KR100747957B1 (ko) | 2007-08-08 |
KR20080050532A (ko) | 2008-06-05 |
JPWO2004095560A1 (ja) | 2006-07-13 |
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US20060151117A1 (en) | 2006-07-13 |
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