JP6930382B2 - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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Description
当該領域の膜厚がほかの領域の膜厚よりも薄いとは言っても、膜厚差は数Å程度であることから、歩留まりに影響を及ぼす現象ではなかったが、パターンの線幅の微小化、デバイスの立体化が進んでいることから、この現象が顕在化する懸念がある。
前記原料ガスを供給する主原料ガス供給部と、
前記基板の公転領域に原料ガスを吐出するように設けられ、基板の公転軌道を形成する円の中心側から周縁側に向かう方向に沿って配列された複数のガス吐出口を備え、前記薄膜の膜厚の面内分布を調整するために原料ガスを供給する調整用原料ガス供給部と、
前記主原料ガス供給部及び調整用原料ガス供給部に対して基板の公転方向に離れて配置され、前記反応ガスを供給する反応ガス供給部と、
前記複数のガス吐出口から吐出される原料ガスについて前記複数のガス吐出口の配列方向の流量分布を調整するための流量調整部と
前記基板を公転させながら、前記主原料ガス供給部と反応ガス供給部とを用いて基板に薄膜を生成する成膜ステップと、次いで前記薄膜の膜厚が薄い部位の膜厚を補償するために、前記基板を連続的または間欠的に公転させながら、前記調整用原料ガス供給部から基板に原料ガスを供給し、基板が前記調整用原料ガス供給部のガス供給領域を通過中に、前記流量分布が予め基板の公転方向の位置に応じて決められた流量分布となるように前記流量調整部による原料ガスの流量調整を行う調整ステップと、を実行するように制御信号を出力する制御部と、を備えたことを特徴とする。
前記基板の公転領域に原料ガスを吐出するように設けられ、基板の公転軌道を形成する円の中心側から周縁側に向かう方向に沿って配列された複数のガス吐出口を備え、前記薄膜の膜厚の面内分布を調整するために原料ガスを供給する調整用原料ガス供給部と、
前記複数のガス吐出口から吐出される原料ガスについて前記複数のガス吐出口の配列方向の流量分布を調整するための流量調整部と、を用い、
前記基板を公転させながら、主原料ガス供給部と、反応ガス供給部とを用い、基板に薄膜を生成する成膜工程と、次いで前記薄膜の膜厚が薄い部位の膜厚を補償するために、前記基板を連続的または間欠的に公転させながら、前記調整用原料ガス供給部から基板に原料ガスを供給し、基板が前記調整用原料ガス供給部のガス供給領域を通過中に、前記流量分布が予め基板の公転方向の位置に応じて決められた流量分布となるように前記流量調整部による原料ガスの流量調整を行う調整工程と、を含むことを特徴とする。
第1の実施の形態に係る成膜装置について説明する。この成膜装置は、図1及び図2に示すように、平面形状が概ね円形である真空容器1と、この真空容器1内に設けられ、当該真空容器1の中心に回転中心Cを有すると共にウエハWを公転させるための例えば石英製の回転テーブル2と、を備えている。真空容器1は、天板部11及び容器本体12を備えており、天板部11が容器本体12から着脱できるように構成されている。天板部11の上面側における中央部には、真空容器1内の中央部において互いに異なる処理ガス同士が混ざり合うことを抑制するために、窒素(N2)ガスを分離ガスとして供給するための分離ガス供給管74が接続されている。
従ってDCSガス及び分離ガスを吐出しながら排気口42から排気を行うと、ガス給排気ユニット4の下方に分離ガスの気流のカーテンにより囲まれた領域が形成され、DCSガスが吐出される領域と、分離ガス吐出口43よりも外側の領域とが区画される。そして分離ガスの気流のカーテンで囲まれた領域に供給されたDCSガスは、分離ガスと共に排気口42により排気される。
さらに回転テーブル2を回転させることにより、改質ガスノズル52の下方に到達すると、同様に水素の活性種によるウエハW上に残っているClの除去が行われる。その後ウエハWは、ガス給排気ユニット4の下方に侵入して、再度DCSが吸着される。
続いて回転テーブル2が回転すると、ウエハWは、反応ガスノズル51及び改質ガスノズル52の下方を順番に通過する。これによりウエハWに吸着したDCSガスが反応してSiNになる。膜厚調整処理において、ウエハWの前方側周縁及び後方側周縁の各々における回転テーブル2の中心側の領域にのみDCSガスが吸着されるため、当該領域においてのみDCSガスがNH3ガスと反応してSiNとなる。
また本発明は、載置台に載置された1枚の基板に向けて、ガスを供給して成膜する枚葉式の成膜装置に適用してもよい。例えば図13に示すように真空容器9内に載置台91を設け、載置台91に載置されたウエハWと対向するようにウエハWの表面全体に向けて、ガスを供給するガス供給部であるシャワーヘッド409を設ける。また真空容器9には、排気口92を設け、排気口92には排気管94を介して排気装置64が接続されている。
また本発明は、基板を直線的に移動させると共に基板の移動領域に向けて原料ガス及び反応ガスを供給する成膜装置に適用してもよい。
また原料ガス供給部は、DCSガスを供給していないDCSガス吐出口41からパージガスを供給するように構成してもよい。さらに原料ガス供給部は、分離ガス吐出口及び排気口を設けなくてもよい。
また本発明の成膜装置は、ウエハWに成膜処理を行うときに原料ガスを供給する主原料ガス供給部と、ウエハWに膜厚調整用の原料ガスを供給する膜厚調整用のガス供給部と、を備えるように構成してもよい。
図14、図15にしめすように主ガス給排気ユニット400は、平面視、回転テーブル2の中央側から周縁側に向かうにつれて回転テーブル2の周方向に広がる扇状に形成されており、ガス給排気ユニット4の下面は、回転テーブル2の上面に近接すると共に対向している。
調整用ガス供給ノズル422は、例えば水平に伸びる支持部420の先端に設けられ、回転軸421を中心に旋回できるように構成されている。これにより回転テーブル2の回転と、調整用ガス供給ノズル422の旋回とによりウエハW上の位置を変え、ウエハWにおける成膜処理にて膜厚が薄く成膜された個所に向けて原料ガスを供給するように構成されている。
このような構成の場合にもウエハWにおける成膜処理にて膜厚が薄い個所の膜厚を補償するように成膜することができるため同様の効果を得ることができる。
また本発明は、複数の原料ガス供給部備えた成膜装置であってもよい。例えば図17に示すように図3、図4に示したガス給排気ユニット4と同様の構成の2本のガス給排気ユニット4を回転テーブル2の中心を挟んで互いに対向するように配置した構成が挙げられる。
また成膜処理において膜厚が薄くなる箇所が2カ所形成される場合において、膜厚調整処理にて、各ガス給排気ユニット4により、ウエハWの夫々異なる箇所に形成された膜厚が薄くなる箇所に原料ガスを供給するようにしてもよい。例えば膜厚調整処理において、一方のガス給排気ユニット4は、ウエハWにおける回転テーブル2の中心側に形成されるか膜厚の薄い個所に原料ガスを供給するように設定し、他方のガス給排気ユニット4は、ウエハWにおける回転テーブル2の周縁側に形成されるか膜厚の薄い個所に原料ガスを供給するように設定する。
そのため上述の実施の形態によれば、各ガス給排気ユニット4において、原料ガスを吐出するDCSガス吐出口41を中心側ガス吐出口411と、周縁側ガス吐出口412との間で切り替える必要がないため、膜厚調整処理において原料ガスの供給される領域の分解能が高い位置制御が可能になる。
2 回転テーブル
4 ガス給排気ユニット
51 反応ガスノズル
52 改質ガスノズル
7 ヒータ
41 ガス吐出口
81 プラズマ発生部
100 制御部
411 中心側ガス吐出口
412 周縁側ガス吐出口
W ウエハ
Claims (10)
- 真空容器内にて、載置部に載置された基板を載置面に沿って公転させながら、基板に原料ガスを供給して吸着させた後、基板に吸着した原料ガスと反応ガスとを反応させて反応生成物を生成するサイクルを複数回繰り返して薄膜を生成する成膜装置において、
前記原料ガスを供給する主原料ガス供給部と、
前記基板の公転領域に原料ガスを吐出するように設けられ、基板の公転軌道を形成する円の中心側から周縁側に向かう方向に沿って配列された複数のガス吐出口を備え、前記薄膜の膜厚の面内分布を調整するために原料ガスを供給する調整用原料ガス供給部と、
前記主原料ガス供給部及び調整用原料ガス供給部に対して基板の公転方向に離れて配置され、前記反応ガスを供給する反応ガス供給部と、
前記複数のガス吐出口から吐出される原料ガスについて前記複数のガス吐出口の配列方向の流量分布を調整するための流量調整部と
前記基板を公転させながら、前記主原料ガス供給部と反応ガス供給部とを用いて基板に薄膜を生成する成膜ステップと、次いで前記薄膜の膜厚が薄い部位の膜厚を補償するために、前記基板を連続的または間欠的に公転させながら、前記調整用原料ガス供給部から基板に原料ガスを供給し、基板が前記調整用原料ガス供給部のガス供給領域を通過中に、前記流量分布が予め基板の公転方向の位置に応じて決められた流量分布となるように前記流量調整部による原料ガスの流量調整を行う調整ステップと、を実行するように制御信号を出力する制御部と、を備えたことを特徴とする成膜装置。 - 前記主原料ガス供給部は、調整用原料ガス供給部を兼用していることを特徴とする請求項1に記載の成膜装置。
- 前記基板の公転位置を検出するエンコーダと、
前記エンコーダのエンコーダ値と前記流量調整部の調整事項とを対応付けたデータが記憶される記憶部と、を備え、
前記制御部は、前記記憶部に記憶されている前記データと前記エンコーダのエンコーダ値とに基づいて前記調整ステップを実行するように構成されている請求項1または2に記載の成膜装置。 - 前記調整用原料ガス供給部は、基板の公転方向に互いに離れた位置に複数設けられ、
複数の調整用原料ガス供給部の各々は、互いに基板に吐出されるガスの流量分布が異なることを特徴とする請求項1ないし3のいずれか一項に記載の成膜装置。 - 前記調整用原料ガス供給部は、基板の公転方向に互いに離れた位置に複数設けられ、
複数の調整用原料ガス供給部の各々は、互いに基板に吐出されるガスの流量分布が同じであることを特徴とする請求項1ないし3のいずれか一項に記載の成膜装置。 - 前記制御部は、基板の種別に対応する前記薄膜の膜厚分布の測定結果に基づいて、前記調整用原料ガス供給部から原料ガスを供給する調整ステップを行うように構成されていることを特徴とする請求項1ないし5のいずれか一項に記載の成膜装置。
- 前記薄膜を生成する成膜ステップにより生成された薄膜の膜厚分布を測定する膜厚測定部を備え、
前記制御部は、前記膜厚測定部による測定結果に基づいて前記調整用原料ガス供給部から原料ガスを供給する調整ステップを行うように構成されていることを特徴とする請求項1ないし6のいずれか一項に記載の成膜装置。 - 真空容器内にて、載置部に載置された基板を載置面に沿って公転させながら、基板に主原料ガス供給部から原料ガスを供給して吸着させた後、反応ガス供給部から反応ガスを供給して基板に吸着した原料ガスと反応ガスとを反応させて反応生成物を生成するサイクルを複数回繰り返して薄膜を生成する成膜装置を用いた成膜方法において、
前記基板の公転領域に原料ガスを吐出するように設けられ、基板の公転軌道を形成する円の中心側から周縁側に向かう方向に沿って配列された複数のガス吐出口を備え、前記薄膜の膜厚の面内分布を調整するために原料ガスを供給する調整用原料ガス供給部と、
前記複数のガス吐出口から吐出される原料ガスについて前記複数のガス吐出口の配列方向の流量分布を調整するための流量調整部と、を用い、
前記基板を公転させながら、主原料ガス供給部と、反応ガス供給部とを用い、基板に薄膜を生成する成膜工程と、次いで前記薄膜の膜厚が薄い部位の膜厚を補償するために、前記基板を連続的または間欠的に公転させながら、前記調整用原料ガス供給部から基板に原料ガスを供給し、基板が前記調整用原料ガス供給部のガス供給領域を通過中に、前記流量分布が予め基板の公転方向の位置に応じて決められた流量分布となるように前記流量調整部による原料ガスの流量調整を行う調整工程と、を含むことを特徴とする成膜方法。 - 前記主原料ガス供給部は、調整用原料ガス供給部を兼用していることを特徴とする請求項8に記載の成膜方法。
- 前記基板の公転位置を検出するエンコーダと、
前記エンコーダのエンコーダ値と前記流量調整部の調整事項とを対応付けたデータが記憶される記憶部と、を用い、
前記記憶部に記憶されているデータと前記エンコーダのエンコーダ値とに基づいて前記調整工程を行うことを特徴とする請求項8または9に記載の成膜方法。
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