JP2021039975A - 成膜装置及び成膜方法 - Google Patents
成膜装置及び成膜方法 Download PDFInfo
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- JP2021039975A JP2021039975A JP2019158683A JP2019158683A JP2021039975A JP 2021039975 A JP2021039975 A JP 2021039975A JP 2019158683 A JP2019158683 A JP 2019158683A JP 2019158683 A JP2019158683 A JP 2019158683A JP 2021039975 A JP2021039975 A JP 2021039975A
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- gas
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- silicon nitride
- nitride film
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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Abstract
【解決手段】
表面に凹部パターンが形成された基板にシリコン窒化膜を成膜する成膜方法において、前記基板を格納する処理容器内にシリコンを含む原料ガスと、前記原料ガスを窒化する窒化ガスとを各々供給して前記基板の表面に沿ってコンフォーマルなシリコン窒化膜を形成する工程と、前記処理容器内へのシリコン原料ガスの供給を停止した状態で、前記基板に前記シリコン窒化膜を整形するためのプラズマ化した整形用ガスを供給し、凹部パターンの底部側から上部側に向かって膜厚が薄くなるように前記シリコン窒化膜を収縮させる工程と、前記シリコン窒化膜を形成する工程と、前記シリコン窒化膜を収縮させる工程とを、交互に繰り返し行い、前記凹部パターンにシリコン窒化膜を埋め込む工程と、を含む。
【選択図】図8
Description
前記凹部パターンが形成された基板に基板の表面形状に沿ったコンフォーマルなシリコン窒化膜を成膜する工程と、
前記コンフォーマルなシリコン窒化膜が成膜された基板にプラズマを供給し、前記シリコン窒化膜を凹部パターンの底部側から上部側に向かって膜厚が薄くなるように収縮させる工程と、を含む。
先ず、図示しない外部の基板搬送機構によって6枚のウエハWが、回転テーブル12の各窪み部14に昇降ピンと基板搬送機構との協働作用により受け渡される。図6は、回転テーブル12に受け渡されるウエハWの表面部分の構造の一例を示す断面図である。成膜処理が行われるウエハWには、シリコン基板100に溝状の凹部パターン101が形成されている。この凹部パターン101は、線幅10nm〜50nm、深さ20nm〜1000nmに形成され、凹部パターン101の幅は、ウエハWの表面から凹部パターン101の底部まで均一な幅で形成されている。
これによりウエハWに形成されたSiN膜102AにH2ガスのプラズマが供給される。既述のようにSiN膜にH2ガスのプラズマを供給したときには、SiN膜102Aが改質されて、膜中に含まれるClが離脱するが、Clが十分に離脱した後も、さらにH2ガスのプラズマの供給を継続すると、SiN膜102A中の成分の離脱が進み、膜密度が高まると共に、徐々に膜厚が薄くなる。
102 SiN膜
103 凹部
W ウエハ
Claims (9)
- 表面に凹部パターンが形成された基板にシリコン窒化膜を成膜する成膜方法において、
前記基板を格納する処理容器内にシリコンを含む原料ガスと、前記原料ガスを窒化する窒化ガスとを各々供給して前記基板の表面に沿ってコンフォーマルなシリコン窒化膜を形成する工程と、
前記処理容器内へのシリコン原料ガスの供給を停止した状態で、前記基板に前記シリコン窒化膜を整形するためのプラズマ化した整形用ガスを供給し、凹部パターンの底部側から上部側に向かって膜厚が薄くなるように前記シリコン窒化膜を収縮させる工程と、
前記シリコン窒化膜を形成する工程と、前記シリコン窒化膜を収縮させる工程とを、交互に繰り返し行い、前記凹部パターンにシリコン窒化膜を埋め込む工程と、
を含む成膜方法。 - 前記窒化ガスは、プラズマ化した窒化ガスであり、前記プラズマ化した整形用ガスとガスの種類が異なる請求項1記載の成膜方法。
- 前記整形用ガスは水素ガスを含む請求項2記載の成膜方法。
- 窒化ガスはプラズマ化したアンモニアガスであり、
プラズマ化した整形用ガスは、プラズマ化したアンモニアガスよりも失活するまでの時間が短いガスを含む請求項2または3記載の成膜方法。 - 前記シリコン窒化膜を成膜する工程は、シリコン窒化膜を2nm以上の膜厚で成膜し、
前記シリコン窒化膜を収縮させる工程は、前記凹部パターンの上部側においてシリコン窒化膜が収縮する膜厚が、前記凹部パターンの底部側においてシリコン窒化膜が収縮する膜厚よりも0.2nm以上大きい請求項1ないし4のいずれか一項に記載の成膜方法。 - 表面に凹部パターンが形成された基板にシリコン窒化膜を成膜する成膜装置において、
前記基板が載置される載置部が内部に設けられた処理容器と、
前記載置部に載置された基板にシリコンを含む原料ガスを供給する原料ガス供給部と、
前記載置部に載置された基板に前記原料ガスを窒化する窒化ガスを供給する窒化ガス供給部と、
前記基板に前記シリコン窒化膜を整形するための整形用ガスを供給する整形用ガス供給部と、
前記処理容器内に供給されたガスをプラズマ化するプラズマ形成機構と、
前記処理容器内に前記原料ガスと、前記窒化ガスとを各々供給して前記基板の表面に沿ってコンフォーマルな前記シリコン窒化膜を形成するステップと、前記処理容器内へのシリコン原料ガスの供給を停止した状態で前記処理容器内に前記整形用ガスを供給すると共に当該整形用ガスをプラズマ化して前記凹部パターンの底部側から上部側に向かって膜厚が薄くなるように前記シリコン窒化膜を収縮させるステップと、前記シリコン窒化膜を形成するステップと前記シリコン窒化膜を収縮させるステップとを交互に繰り返し行い、前記凹部パターンに前記シリコン窒化膜を埋め込むステップと、を実行するための制御信号を出力する制御部と、を含む成膜装置。 - 前記載置部は、載置された基板を公転させる回転テーブルであり、
前記回転テーブル上に回転テーブルの回転方向に沿って、原料ガスが供給される第1の処理領域と、当該第1の処理領域とは雰囲気が分離され、前記窒化ガス及び前記整形用ガスが供給される第2の処理領域と、が互いに離間して配置され、
前記プラズマ形成機構は前記第2の処理領域における前記窒化ガス及び前記整形用ガスをプラズマ化し、
前記シリコン窒化膜を形成するステップは、前記原料ガスと、プラズマ化した窒化ガスとを前記第1の処理領域、前記第2の処理領域に夫々供給しながら前記基板を公転させるステップであり、
前記シリコン窒化膜を収縮させるステップは、プラズマ化した整形用ガスを前記第2の処理領域に供給するステップである請求項6に記載の成膜装置 - 前記プラズマ化した窒化ガスは、前記プラズマ化した整形用ガスとはガスの種類が異なる請求項7記載の成膜方法。
- 前記整形用ガスは、水素ガスを含む請求項8記載の成膜方法。
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