JP2018117038A - 保護膜形成方法 - Google Patents
保護膜形成方法 Download PDFInfo
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- JP2018117038A JP2018117038A JP2017006576A JP2017006576A JP2018117038A JP 2018117038 A JP2018117038 A JP 2018117038A JP 2017006576 A JP2017006576 A JP 2017006576A JP 2017006576 A JP2017006576 A JP 2017006576A JP 2018117038 A JP2018117038 A JP 2018117038A
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- silicon
- fluorine
- gas
- containing gas
- nitriding
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Abstract
【解決手段】平坦面に複数の窪み形状が形成された表面を有する基板の前記窪み形状同士の間の前記平坦面上に選択的に成膜を行う保護膜形成方法であって、
前記基板の前記表面上に形成されたシリコン含有下地膜上にフッ素含有ガスを供給し、前記シリコン含有下地膜上全体をフッ素終端とするフッ素終端化工程と、
フッ素終端化された前記シリコン含有下地膜にプラズマ化された窒化ガスを供給し、前記平坦面上の前記シリコン含有下地膜の表面を窒化することによりシリコン吸着サイトを形成する窒化工程と、
前記シリコン含有下地膜にシリコン含有ガスを供給し、前記シリコン吸着サイト上にシリコンを吸着させるシリコン吸着工程と、を有する。
【選択図】図9
Description
前記基板の前記表面上に形成されたシリコン含有下地膜上にフッ素含有ガスを供給し、前記シリコン含有下地膜上全体をフッ素終端とするフッ素終端化工程と、
フッ素終端化された前記シリコン含有下地膜にプラズマ化された窒化ガスを供給し、前記平坦面上の前記シリコン含有下地膜の表面を窒化することによりシリコン吸着サイトを形成する窒化工程と、
前記シリコン含有下地膜にシリコン含有ガスを供給し、前記シリコン吸着サイト上にシリコンを吸着させるシリコン吸着工程と、を有する。
<成膜装置>
まず、本発明の第1の実施形態に係る保護膜形成方法に好適に用いられる成膜装置について説明する。本発明の実施形態に係る保護膜形成方法は、種々の成膜装置で実施することが可能であるが、一例として、回転テーブル式のALD(Atomic Layer Deposition、原子層堆積)成膜装置を用いた例を挙げて以下説明する。
次に、図9を用いて、本発明の第1の実施形態に係る保護膜形成方法について上述の成膜装置を用いて行う場合を例にとり説明する。図9は、本発明の第1の実施形態に係る保護膜形成方法の一例の一連の工程を示した図である。図9(a)は、本発明の第1の実施形態に係る保護膜形成方法の成膜開始時のウエハWの状態を示した図である。
<成膜装置>
図10は、本発明の第2の実施形態に係る保護膜形成方法を実施するために好適に用いられる成膜装置の一例を示した図である。
本発明の第2の実施形態に係る保護膜形成方法は、第1の実施形態に係る保護膜形成方法と同様の手順で実施することができる。相違点は、図9(b)のフッ素終端化工程において、活性化されたフッ素含有ガスがシリコン含有下地膜に供給されるという点だけであり、工程自体に変化は無い。フッ素終端化工程を、活性化されたフッ素含有ガスをシリコン含有下地膜に供給して行うことにより、確実にシリコン含有下地膜の終端をフッ化することができる。
図13は、本発明の実施形態に係る保護膜形成方法の実施結果を示した図である。実施例においては、フッ素含有ガスとしてClF3/Arの混合ガス、シリコン含有ガスとしてジクロロシラン(SiH2Cl2)、窒化ガスとしてNH3/Arの混合ガスを用いた。リモートプラズマ発生器90は使用せず、第1の実施形態に準じた形で実施した。
2 回転テーブル
4 凸状部
5 突出部
7 ヒータユニット
11 天板
12 容器本体
15 搬送口
24 凹部
31〜33 反応ガスノズル
41、42 分離ガスノズル
80 プラズマ発生器
90 リモートプラズマ発生器
91 プラズマ生成部
120〜122 流量制御器
130〜132 ガス供給源
P1〜P3 処理領域
W ウエハ
Claims (12)
- 平坦面に複数の窪み形状が形成された表面を有する基板の前記窪み形状同士の間の前記平坦面上に選択的に成膜を行う保護膜形成方法であって、
前記基板の前記表面上に形成されたシリコン含有下地膜上にフッ素含有ガスを供給し、前記シリコン含有下地膜上全体をフッ素終端とするフッ素終端化工程と、
フッ素終端化された前記シリコン含有下地膜にプラズマ化された窒化ガスを供給し、前記平坦面上の前記シリコン含有下地膜の表面を窒化することによりシリコン吸着サイトを形成する窒化工程と、
前記シリコン含有下地膜にシリコン含有ガスを供給し、前記シリコン吸着サイト上にシリコンを吸着させるシリコン吸着工程と、を有する保護膜形成方法。 - 前記シリコン吸着サイトは、前記窪み形状の上端付近の内壁にも形成される請求項1に記載の保護膜形成方法。
- 前記フッ素終端化工程と前記窒化工程との間、及び前記窒化工程と前記シリコン吸着工程との間に、前記基板にパージガスを供給するパージ工程を更に有する請求項1又は2に記載の保護膜形成方法。
- 前記フッ素終端化工程の前に、前記シリコン含有下地膜を前記基板の前記表面上に成膜するシリコン含有下地膜成膜工程を更に有する請求項1乃至3のいずれか一項に記載の保護膜形成方法。
- 前記フッ素含有ガスは活性化されて供給される請求項1乃至4のいずれか一項に記載の保護膜形成方法。
- 前記窒化ガスは、NH3含有ガス又はN2含有ガスである請求項1乃至5のいずれか一項に記載の保護膜形成方法。
- 前記窪み形状は、トレンチ又はビアホールである請求項1乃至6のいずれか一項に記載の保護膜形成方法。
- 前記フッ素終端化工程を1回行った後、
前記窒化工程及び前記シリコン吸着工程を交互に所定の複数回数に繰り返し、前記窪み形状同士の間の前記平坦面上に所定の膜厚の保護膜を形成する請求項1乃至7のいずれか一項に記載の保護膜形成方法。 - 前記フッ素終端化工程を1回行った後、前記窒化工程及び前記シリコン吸着工程を交互に前記所定の複数回数繰り返すのを1サイクルとして、該サイクルを複数サイクル繰り返す請求項8に記載の保護膜形成方法。
- 前記基板は、処理室内に設けられた回転テーブル上に周方向に沿って配置され、
前記処理室内の前記回転テーブルより上方には、前記回転テーブルの回転方向に沿って前記フッ素含有ガスを前記基板に供給可能なフッ素含有ガス供給領域と、前記シリコン含有ガスを前記基板に供給可能なシリコン含有ガス供給領域と、前記窒化ガスを前記基板に供給可能な窒化ガス供給領域が互いに離間して設けられ、
前記フッ素終端化工程は、前記シリコン含有ガス供給領域における前記シリコン含有ガスの供給と前記窒化ガス供給領域における前記窒化ガスの供給を停止し、前記フッ素含有ガス供給領域において前記フッ素含有ガスを前記基板に供給しながら前記回転テーブルを少なくとも1回回転させることにより行われ、
前記窒化工程は、前記フッ素含有ガス供給領域における前記フッ素含有ガスの供給を停止し、前記窒化ガス供給領域において前記プラズマ化された窒化ガスを基板に供給しながら前記回転テーブルを複数回回転させることにより行われ、
前記シリコン吸着工程は、前記フッ素含有ガス供給領域における前記フッ素含有ガスの供給を停止し、前記シリコン含有ガス供給領域において前記シリコン含有ガスを基板に供給しながら前記回転テーブルを複数回回転させることにより行われる請求項8又は9のいずれか一項に記載の保護膜形成方法。 - 前記窒化工程では、前記シリコン含有ガス供給領域において前記シリコン含有ガスも前記基板に供給され、
前記シリコン吸着工程では、前記プラズマ化された窒化ガスも前記基板に供給される請求項10に記載の保護膜形成方法。 - 前記フッ素終端化工程と前記窒化工程及び前記シリコン吸着工程とは前記回転テーブルの回転速度が異なり、
前記フッ素終端化工程と前記窒化工程との間に、前記回転テーブルの回転速度を変更する回転速度変更工程を更に有する請求項10又は11に記載の保護膜形成方法。
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US20180204716A1 (en) | 2018-07-19 |
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