JP6723135B2 - 保護膜形成方法 - Google Patents
保護膜形成方法 Download PDFInfo
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- JP6723135B2 JP6723135B2 JP2016199333A JP2016199333A JP6723135B2 JP 6723135 B2 JP6723135 B2 JP 6723135B2 JP 2016199333 A JP2016199333 A JP 2016199333A JP 2016199333 A JP2016199333 A JP 2016199333A JP 6723135 B2 JP6723135 B2 JP 6723135B2
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- 238000000034 method Methods 0.000 title claims description 136
- 230000001681 protective effect Effects 0.000 title claims description 118
- 230000015572 biosynthetic process Effects 0.000 title description 25
- 238000012545 processing Methods 0.000 claims description 56
- 238000005121 nitriding Methods 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 36
- 230000003647 oxidation Effects 0.000 claims description 34
- 238000007254 oxidation reaction Methods 0.000 claims description 34
- 239000002994 raw material Substances 0.000 claims description 34
- 238000001179 sorption measurement Methods 0.000 claims description 22
- 230000001590 oxidative effect Effects 0.000 claims description 21
- 125000002524 organometallic group Chemical group 0.000 claims description 17
- PXSHDOMYSLTUTJ-UHFFFAOYSA-N [Ti]N Chemical compound [Ti]N PXSHDOMYSLTUTJ-UHFFFAOYSA-N 0.000 claims description 15
- 239000000654 additive Substances 0.000 claims description 15
- 230000000996 additive effect Effects 0.000 claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 238000002407 reforming Methods 0.000 claims description 5
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 243
- 239000012495 reaction gas Substances 0.000 description 64
- 235000012431 wafers Nutrition 0.000 description 51
- 238000000926 separation method Methods 0.000 description 43
- 238000010586 diagram Methods 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000009832 plasma treatment Methods 0.000 description 13
- 238000012546 transfer Methods 0.000 description 12
- 238000010926 purge Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002052 molecular layer Substances 0.000 description 5
- -1 organometallic nitride Chemical class 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32056—Deposition of conductive or semi-conductive organic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
前記複数の窪み形状を含む前記基板の表面上に有機金属ガス又は有機半金属ガスからなる原料ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスを吸着させる原料ガス吸着工程と、
前記複数の窪み形状を含む前記基板の表面上にH 2 O 2 ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に吸着した前記原料ガスを熱酸化により酸化し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスに含まれる有機金属又は有機半金属の酸化膜を成膜する酸化工程と、を有し、
前記原料ガス吸着工程及び前記酸化工程は、1分間に90回以上300回以下の繰り返し周期で繰り返し行われる。
まず、本発明の実施形態に係る保護膜形成方法を実施するのに好適な成膜装置について説明する。本発明の実施形態に係る保護膜形成方法は、基板に供給するガスの種類を高速で切り替えることができれば、種々の成膜装置で実施可能であり、成膜装置の形態は問わない。ここでは、そのような基板に供給するガスの種類を高速に切り替える成膜処理が可能な成膜装置の一例について説明する。
次に、図9を用いて、本発明の実施形態による保護膜形成方法について上述の成膜装置を用いて行う場合を例に挙げて説明する。図9は、本発明の実施形態に係る保護膜形成方法の一例を説明するための図である。
次に、本発明を実施した実施例について説明する。
2 回転テーブル
7 ヒータユニット
11 天板
12 容器本体
15 搬送口
24 凹部
31〜33 反応ガスノズル
41、42 分離ガスノズル
80 プラズマ発生器
130〜132 ガス供給源
P1〜P3 処理領域
W ウエハ
T トレンチ
Claims (17)
- 基板の表面に複数の窪み形状が形成され、隣接する該複数の窪み形状間の非窪み形状形成領域の表面上に保護膜を形成する保護膜形成方法であって、
前記複数の窪み形状を含む前記基板の表面上に有機金属ガス又は有機半金属ガスからなる原料ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスを吸着させる原料ガス吸着工程と、
前記複数の窪み形状を含む前記基板の表面上にH2O2ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に吸着した前記原料ガスを熱酸化により酸化し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスに含まれる有機金属又は有機半金属の酸化膜を成膜する酸化工程と、を有し、
前記原料ガス吸着工程及び前記酸化工程は、1分間に90回以上300回以下の繰り返し周期で繰り返し行われる保護膜形成方法。 - 前記酸化工程と前記原料ガス吸着工程との間に、前記有機金属又は前記有機半金属の酸化膜にプラズマ化された希ガス及び添加ガスを供給する改質工程を更に有する請求項1に記載の保護膜形成方法。
- 前記基板は、処理室内に設けられた回転テーブル上に周方向に沿って配置され、
該回転テーブルより上方に、該回転テーブルの該周方向に沿って前記原料ガスを前記基板の表面上に供給可能な原料ガス供給領域及び前記H2O2ガスを前記基板の表面上に供給可能な酸化ガス供給領域が互いに離間して設けられ、
前記回転テーブルを90〜300rpmの回転速度で回転させ、前記基板に前記原料ガス供給領域及び前記酸化ガス供給領域を順次通過させることにより、前記原料ガス吸着工程及び前記酸化工程を1分間に90回以上300回以下の繰り返し周期で行う請求項1又は2に記載の保護膜形成方法。 - 前記基板は、処理室内に設けられた回転テーブル上に周方向に沿って配置され、
該回転テーブルより上方に、該回転テーブルの回転方向に沿って前記原料ガスを前記基板の表面上に供給可能な原料ガス供給領域、前記H2O2ガスを前記基板の表面上に供給可能なH2O2ガス供給領域及び前記プラズマ化された希ガス及び添加ガスを前記基板の表面上に供給可能なプラズマガス供給領域が互いに離間して設けられ、
前記回転テーブルを90〜300rpmの回転速度で回転させ、前記基板に前記原料ガス供給領域、前記H2O2ガス供給領域及び前記プラズマガス供給領域を順次通過させることにより、前記原料ガス吸着工程、前記酸化工程及び前記改質工程を1分間に90回以上300回以下の繰り返し周期で行う請求項2に記載の保護膜形成方法。 - 基板の表面に複数の窪み形状が形成され、隣接する該複数の窪み形状間の非窪み形状形成領域の表面上に保護膜を形成する保護膜形成方法であって、
前記複数の窪み形状を含む前記基板の表面上に有機金属ガス又は有機半金属ガスからなる原料ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスを吸着させる原料ガス吸着工程と、
前記複数の窪み形状を含む前記基板の表面上にNH3含有ガスを供給し、前記基板の前記非窪み形状形成領域の表面上に吸着した前記原料ガスを熱窒化により窒化し、前記基板の前記非窪み形状形成領域の表面上に前記原料ガスに含まれる有機金属又は有機半金属の窒化膜を成膜する窒化工程と、を有し、
前記原料ガス吸着工程及び前記窒化工程は、1分間に90回以上300回以下の繰り返し周期で繰り返し行われる保護膜形成方法。 - 前記窒化工程と前記原料ガス吸着工程との間に、前記有機金属又は前記有機半金属の窒化膜にプラズマ化された希ガス及び添加ガスを供給する改質工程を更に有する請求項5に記載の保護膜形成方法。
- 前記基板は、処理室内に設けられた回転テーブル上に周方向に沿って配置され、
該回転テーブルより上方に、該回転テーブルの該周方向に沿って前記原料ガスを前記基板の表面上に供給可能な原料ガス供給領域及び前記NH3含有ガスを前記基板の表面上に供給可能な窒化ガス供給領域が互いに離間して設けられ、
前記回転テーブルを90〜300rpmの回転速度で回転させ、前記基板に前記原料ガス供給領域及び前記窒化ガス供給領域を順次通過させることにより、前記原料ガス吸着工程及び前記窒化工程を1分間に90回以上300回以下の繰り返し周期で行う請求項5又は6に記載の保護膜形成方法。 - 前記基板は、処理室内に設けられた回転テーブル上に周方向に沿って配置され、
該回転テーブルより上方に、該回転テーブルの回転方向に沿って前記原料ガスを前記基板の表面上に供給可能な原料ガス供給領域、前記NH3含有ガスを前記基板の表面上に供給可能なNH3含有ガス供給領域及び前記プラズマ化された希ガス及び添加ガスを前記基板の表面上に供給可能なプラズマガス供給領域が互いに離間して設けられ、
前記回転テーブルを90〜300rpmの回転速度で回転させ、前記基板に前記原料ガス供給領域、前記NH3含有ガス供給領域及び前記プラズマガス供給領域を順次通過させることにより、前記原料ガス吸着工程、前記窒化工程及び前記改質工程を1分間に90回以上300回以下の繰り返し周期で行う請求項6に記載の保護膜形成方法。 - 前記回転テーブルを90〜240rpmの回転速度で回転させる請求項3、4、7又は8に記載の保護膜形成方法。
- 前記回転テーブルを90〜120rpmの回転速度で回転させる請求項9に記載の保護膜形成方法。
- 前記回転テーブルを150〜300rpmの回転速度で回転させる請求項3、4、7又は8に記載の保護膜形成方法。
- 前記回転テーブルを180〜300rpmの回転速度で回転させる請求項11に記載の保護膜形成方法。
- 前記有機金属ガスは、High−k膜を成膜可能なガスである請求項1乃至12のいずれか一項に記載の保護膜形成方法。
- 前記有機金属ガスは、有機アミノチタニウムを含むガスである請求項1乃至13のいずれか一項に記載の保護膜形成方法。
- 前記有機アミノチタニウムを含むガスは、テトラキスジメチルアミノチタニウムを含むガスである請求項14に記載の保護膜形成方法。
- 前記有機半金属ガスは、有機シランガスである請求項1乃至8、11又は12のいずれか一項に記載の保護膜形成方法。
- 前記窪み形状は、トレンチである請求項1乃至16のいずれか一項に記載の保護膜形成方法。
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