JP2017011058A - プラズマを用いた成膜方法 - Google Patents
プラズマを用いた成膜方法 Download PDFInfo
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- JP2017011058A JP2017011058A JP2015123776A JP2015123776A JP2017011058A JP 2017011058 A JP2017011058 A JP 2017011058A JP 2015123776 A JP2015123776 A JP 2015123776A JP 2015123776 A JP2015123776 A JP 2015123776A JP 2017011058 A JP2017011058 A JP 2017011058A
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- 238000000151 deposition Methods 0.000 title abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 184
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 68
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 68
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 44
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims abstract description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 112
- 238000000034 method Methods 0.000 claims description 67
- 125000001153 fluoro group Chemical group F* 0.000 claims description 51
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 229910052731 fluorine Inorganic materials 0.000 claims description 21
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 13
- 125000005843 halogen group Chemical group 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
- PGHWHQUVLXTFLZ-UHFFFAOYSA-N trichloro(fluoro)silane Chemical compound F[Si](Cl)(Cl)Cl PGHWHQUVLXTFLZ-UHFFFAOYSA-N 0.000 claims description 8
- LNUZHCSQTRPPPK-UHFFFAOYSA-N dichloro(difluoro)silane Chemical compound F[Si](F)(Cl)Cl LNUZHCSQTRPPPK-UHFFFAOYSA-N 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- WOLDFAYTXKMDAQ-UHFFFAOYSA-N chlorotrifluorosilane Chemical compound F[Si](F)(F)Cl WOLDFAYTXKMDAQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 abstract description 79
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052786 argon Inorganic materials 0.000 abstract description 13
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001939 inductive effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 149
- 239000010408 film Substances 0.000 description 109
- 239000010409 thin film Substances 0.000 description 55
- 125000001309 chloro group Chemical group Cl* 0.000 description 48
- 238000009616 inductively coupled plasma Methods 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 33
- 229910052814 silicon oxide Inorganic materials 0.000 description 33
- -1 for example Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 29
- 239000010703 silicon Substances 0.000 description 19
- 229910052801 chlorine Inorganic materials 0.000 description 17
- 150000001768 cations Chemical class 0.000 description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 12
- 239000000460 chlorine Substances 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 239000011737 fluorine Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000002344 surface layer Substances 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 7
- 229910001882 dioxygen Inorganic materials 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- ATVLVRVBCRICNU-UHFFFAOYSA-N trifluorosilicon Chemical compound F[Si](F)F ATVLVRVBCRICNU-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UETQVDZZPKAQIC-UHFFFAOYSA-N chlorane Chemical compound Cl.Cl.Cl.Cl UETQVDZZPKAQIC-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
Description
10 プラズマCVD成膜装置
34 チャネル
35 ソース電極
36 ドレイン電極
37,40,43 パッシベーション層
48 ゲート絶縁膜
Claims (9)
- 処理ガスからプラズマを生成し、該プラズマによって珪素原子を含む膜を電子デバイス構造のテーパ部に成膜するプラズマを用いた成膜方法であって、
前記処理ガスはいずれも水素原子を含まない第1のガス及び第2のガスを含み、
前記第1のガスは珪素原子及び弗素原子以外のハロゲン原子を含み、前記珪素原子及び前記ハロゲン原子の原子間結合力は前記珪素原子及び前記弗素原子の原子間結合力よりも小さく、
前記第2のガスは窒素原子及び酸素原子の少なくともいずれかを含むことを特徴とするプラズマを用いた成膜方法。 - 前記処理ガスは四弗化珪素ガスをさらに含むことを特徴とする請求項1記載のプラズマを用いた成膜方法。
- 前記第1のガスは四塩化珪素ガスであることを特徴とする請求項2記載のプラズマを用いた成膜方法。
- 前記第2のガスは窒素ガスであり、前記珪素原子を含む膜は窒化珪素膜であることを特徴とする請求項3記載のプラズマを用いた成膜方法。
- 前記処理ガスにおいて、前記四弗化珪素ガス及び前記四塩化珪素ガスの合計流量に対する前記四塩化珪素ガスの流量の比率は、12.5%乃至75%であることを特徴とする請求項4記載のプラズマを用いた成膜方法。
- 前記処理ガスにおいて、前記四弗化珪素ガス及び前記四塩化珪素ガスの合計流量に対する前記四塩化珪素ガスの流量の比率は、25%乃至50%であることを特徴とする請求項5記載のプラズマを用いた成膜方法。
- 前記第1のガスは三塩化弗化珪素ガス、二塩化二弗化珪素ガス及び塩化三弗化珪素ガスの少なくともいずれからなることを特徴とする請求項1又は2記載のプラズマを用いた成膜方法。
- 前記珪素原子を含む膜は酸化物半導体を保護する保護膜であることを特徴とする請求項1乃至7のいずれか1項に記載のプラズマを用いた成膜方法。
- 前記珪素原子を含む膜はゲート絶縁膜であることを特徴とする請求項1乃至7のいずれか1項に記載のプラズマを用いた成膜方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2015123776A JP6523071B2 (ja) | 2015-06-19 | 2015-06-19 | プラズマを用いた成膜方法 |
TW105118413A TWI696210B (zh) | 2015-06-19 | 2016-06-13 | 使用了電漿之成膜方法 |
KR1020160074530A KR101896153B1 (ko) | 2015-06-19 | 2016-06-15 | 플라즈마를 사용한 성막 방법 |
CN201610439083.3A CN106257618B (zh) | 2015-06-19 | 2016-06-17 | 使用等离子体的成膜方法 |
KR1020180102473A KR101926317B1 (ko) | 2015-06-19 | 2018-08-30 | 플라즈마를 사용한 성막 방법 |
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JP2015123776A JP6523071B2 (ja) | 2015-06-19 | 2015-06-19 | プラズマを用いた成膜方法 |
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JP2017011058A true JP2017011058A (ja) | 2017-01-12 |
JP6523071B2 JP6523071B2 (ja) | 2019-05-29 |
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JP (1) | JP6523071B2 (ja) |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2018117038A (ja) * | 2017-01-18 | 2018-07-26 | 東京エレクトロン株式会社 | 保護膜形成方法 |
JP2018195610A (ja) * | 2017-05-12 | 2018-12-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
KR20200013604A (ko) | 2018-07-30 | 2020-02-07 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
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JP2018117038A (ja) * | 2017-01-18 | 2018-07-26 | 東京エレクトロン株式会社 | 保護膜形成方法 |
JP2018195610A (ja) * | 2017-05-12 | 2018-12-06 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
TWI772419B (zh) * | 2017-05-12 | 2022-08-01 | 日商東京威力科創股份有限公司 | 成膜方法及成膜裝置 |
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JP2020025065A (ja) * | 2018-07-30 | 2020-02-13 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP7130548B2 (ja) | 2018-07-30 | 2022-09-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
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KR20180100513A (ko) | 2018-09-11 |
KR101926317B1 (ko) | 2018-12-06 |
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KR101896153B1 (ko) | 2018-09-07 |
CN106257618B (zh) | 2019-05-03 |
JP6523071B2 (ja) | 2019-05-29 |
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