JP6608332B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP6608332B2 JP6608332B2 JP2016102231A JP2016102231A JP6608332B2 JP 6608332 B2 JP6608332 B2 JP 6608332B2 JP 2016102231 A JP2016102231 A JP 2016102231A JP 2016102231 A JP2016102231 A JP 2016102231A JP 6608332 B2 JP6608332 B2 JP 6608332B2
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Description
本発明の実施形態に係る成膜装置について説明する。図1は、本発明の実施形態に係る成膜装置の概略縦断面図である。図2は、図1の成膜装置の真空容器内の構成を示す概略斜視図である。図3は、図1の成膜装置の真空容器内の構成を示す概略平面図である。
次に、本発明の実施形態に係る成膜方法について、上述の成膜装置により、トレンチが形成されているシリコンウエハを使用し、トレンチの内面にSiO2膜を成膜する場合を例に挙げて説明する。
次に、本発明の実効性を示すシミュレーション結果について、図10から図13に基づき説明する。図10から図13は、分離領域D1におけるH2ガスの流速分布及び濃度分布を示す図である。なお、図10から図13において、(a)はH2ガスの流速分布を示し、(b)はH2ガスの濃度分布を示している。
次に、本発明の実効性を示す実験結果について説明する。図14は、H2ガスの供給流量とウエハに成膜されたSiO2膜の膜厚との関係を示す図である。
2 回転テーブル
31 反応ガスノズル
32 反応ガスノズル
33 反応ガスノズル
41 分離ガス供給部
42 分離ガス供給部
44 第1の天井面
45 第2の天井面
80 プラズマ発生器
124 流量制御器
125 流量制御器
P1 第1の処理領域
P2 第2の処理領域
P3 第3の処理領域
D1 分離領域
D2 分離領域
W ウエハ
Claims (15)
- 処理室と、
前記処理室内に設けられ、上面に基板を載置可能な回転テーブルと、
前記回転テーブルの上方に設けられ、前記回転テーブルの前記上面に第1の反応ガスを供給可能な第1の反応ガス供給部が配置された第1の処理領域と、
前記第1の反応ガス供給部と前記回転テーブルの周方向において離間して設けられ、前記第1の反応ガスと反応する第2の反応ガスを前記回転テーブルの前記上面に供給可能な第2の反応ガス供給部が配置された第2の処理領域と、
前記回転テーブルの周方向において前記第1の反応ガス供給部と前記第2の反応ガス供給部との間に設けられ、前記第1の反応ガスと前記第2の反応ガスとを分離する分離ガスを供給可能な複数の分離ガス供給部が前記回転テーブルの半径方向に沿って所定の間隔で配置された分離領域と、
を有し、
前記分離ガス供給部には、前記分離ガスに添加され、前記第1の反応ガスの吸着性を制御可能な添加ガスを供給する添加ガス供給源が接続されている、
成膜装置。 - 処理室と、
前記処理室内に設けられ、上面に基板を載置可能な回転テーブルと、
前記回転テーブルの上方に設けられ、前記回転テーブルの前記上面に第1の反応ガスを供給可能な第1の反応ガス供給部が配置された第1の処理領域と、
前記第1の反応ガス供給部と前記回転テーブルの周方向において離間して設けられ、前記第1の反応ガスと反応する第2の反応ガスを前記回転テーブルの前記上面に供給可能な第2の反応ガス供給部が配置された第2の処理領域と、
前記回転テーブルの周方向において前記第1の反応ガス供給部と前記第2の反応ガス供給部との間に設けられ、前記第1の反応ガスと前記第2の反応ガスとを分離する分離ガスを供給可能な複数の分離ガス供給部が前記回転テーブルの半径方向に沿って所定の間隔で配置された分離領域と、
を有し、
前記分離ガス供給部には、前記分離ガスに添加され、前記第1の反応ガスに含まれる原料成分の一部をエッチング可能な添加ガスを供給する添加ガス供給源が接続されており、
前記第1の反応ガスは、シリコン含有ガスであり、
前記添加ガスは、塩素ガスである、
成膜装置。 - 前記複数の分離ガス供給部の各々には、前記回転テーブルの半径方向に沿って配列され、前記回転テーブルの前記上面に前記分離ガス及び前記添加ガスを供給する複数のガス吐出孔が設けられている、
請求項1又は2に記載の成膜装置。 - 前記複数の分離ガス供給部の各々は、前記回転テーブルの回転方向において同じ位置に設けられている、
請求項1乃至3のいずれか一項に記載の成膜装置。 - 前記複数の分離ガス供給部の各々は、前記回転テーブルの回転方向において異なる位置に設けられている、
請求項1乃至3のいずれか一項に記載の成膜装置。 - 前記第1の処理領域、前記第2の処理領域及び前記分離領域は、各々、前記回転テーブルの上面と前記処理室の天井面との間に所定の高さを有し、
前記分離領域の天井面の高さは、前記第1の処理領域の天井面の高さ及び前記第2の処理領域の天井面の高さよりも低い、
請求項1乃至5のいずれか一項に記載の成膜装置。 - 複数の前記分離ガス供給部の各々に対応して設けられ、前記分離ガスの供給流量及び前記添加ガスの供給流量を制御可能な複数の流量制御器を更に有する、
請求項1乃至6のいずれか一項に記載の成膜装置。 - 前記回転テーブルの回転方向に沿って、前記第1の処理領域、前記第2の処理領域及び前記分離領域がこの順番で配置されている、
請求項1乃至7のいずれか一項に記載の成膜装置。 - 前記添加ガスは、水素含有ガスである、
請求項1に記載の成膜装置。 - 前記添加ガスは、ハロゲン含有ガスである、
請求項1に記載の成膜装置。 - 前記第2の反応ガスは、酸化ガス又は窒化ガスである、
請求項1乃至10のいずれか一項に記載の成膜装置。 - 前記第1の反応ガス供給部及び前記第2の反応ガス供給部と前記回転テーブルの周方向において離間して設けられ、前記第1の反応ガスと前記第2の反応ガスとの反応により生成される反応生成物を改質する第3の反応ガスを前記回転テーブルの前記上面に供給可能な第3の反応ガス供給部が配置された第3の処理領域を更に有する、
請求項1乃至11のいずれか一項に記載の成膜装置。 - 前記第3の処理領域の上方に設けられ、前記第3の反応ガスを活性化するプラズマ発生器を更に有する、
請求項12に記載の成膜装置。 - 前記基板は、表面に凹部が形成されたウエハである、
請求項1乃至13のいずれか一項に記載の成膜装置。 - 前記凹部は、前記基板の表面に形成されたトレンチ又はビアである、
請求項14に記載の成膜装置。
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