JP6391524B2 - 脱酸素装置および基板処理装置 - Google Patents
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- 238000006392 deoxygenation reaction Methods 0.000 title claims description 132
- 239000000758 substrate Substances 0.000 title claims description 85
- 238000012545 processing Methods 0.000 title claims description 63
- 239000007789 gas Substances 0.000 claims description 287
- 239000007788 liquid Substances 0.000 claims description 219
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 129
- 239000001301 oxygen Substances 0.000 claims description 129
- 229910052760 oxygen Inorganic materials 0.000 claims description 129
- 239000000654 additive Substances 0.000 claims description 126
- 230000000996 additive effect Effects 0.000 claims description 126
- 238000003860 storage Methods 0.000 claims description 68
- 230000007423 decrease Effects 0.000 claims description 35
- 238000012423 maintenance Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 18
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 5
- 238000007872 degassing Methods 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000009849 vacuum degassing Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000003635 deoxygenating effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0005—Degasification of liquids with one or more auxiliary substances
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/0063—Regulation, control including valves and floats
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D19/00—Degasification of liquids
- B01D19/02—Foam dispersion or prevention
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Degasification And Air Bubble Elimination (AREA)
- Physical Water Treatments (AREA)
- Accessories For Mixers (AREA)
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Description
請求項2に記載の発明は、対象液の溶存酸素濃度を低減する脱酸素装置であって、対象液を貯溜する貯溜槽と、酸素とは異なる添加ガスを前記貯溜槽内の前記対象液中に供給するガス供給部と、前記ガス供給部から前記対象液中に供給される前記添加ガスの供給開始からの総量である総供給量と前記対象液の溶存酸素濃度との関係を示す相関情報を記憶する記憶部と、前記ガス供給部からの前記添加ガスの単位時間あたりの供給量である単位供給量を制御する供給制御部と、前記ガス供給部から前記貯溜槽内の前記対象液中に供給される前記添加ガスの供給量を調節する流量調節部と、前記供給制御部による前記流量調節部の制御記録に基づいて前記総供給量を取得し、前記総供給量と前記相関情報とに基づいて前記対象液の溶存酸素濃度を求める演算部とを備える。
請求項3に記載の発明は、請求項2に記載の脱酸素装置であって、前記演算部により求められた溶存酸素濃度が、予め定められた目標濃度以下まで減少すると、前記供給制御部が、前記単位供給量を、前記対象液の溶存酸素濃度を維持する維持供給量に減少させる。
6 処理液供給部
7,7a〜7c 脱酸素装置
70 対象液
71 貯溜槽
72,72a〜72c ガス供給部
73 記憶部
74 演算部
75 供給制御部
722 ガス供給口
723 供給口調節部
773a (箱部の)上面部
774 スリット板
775,776 開口
777,777b,777c 供給口変更部
796 外筒部
797 内筒部
798a 小開口
798b 中開口
798c 大開口
799 外側開口
Claims (10)
- 対象液の溶存酸素濃度を低減する脱酸素装置であって、
対象液を貯溜する貯溜槽と、
酸素とは異なる添加ガスを前記貯溜槽内の前記対象液中に供給するガス供給部と、
前記ガス供給部から前記対象液中に供給される前記添加ガスの供給開始からの総量である総供給量と前記対象液の溶存酸素濃度との関係を示す相関情報を記憶する記憶部と、
前記総供給量と前記相関情報とに基づいて前記対象液の溶存酸素濃度を求める演算部と、
前記ガス供給部からの前記添加ガスの単位時間あたりの供給量である単位供給量を制御する供給制御部と、
を備え、
前記演算部により求められた溶存酸素濃度が、予め定められた目標濃度以下まで減少すると、前記供給制御部が、前記単位供給量を、前記対象液の溶存酸素濃度を維持する維持供給量に減少させ、
前記対象液への前記添加ガスの供給開始時における前記単位供給量が第1供給量であり、
前記演算部により求められた溶存酸素濃度が前記目標濃度まで減少するよりも前に、前記供給制御部が、前記単位供給量を前記第1供給量よりも小さくかつ前記維持供給量よりも大きい第2供給量に減少させることを特徴とする脱酸素装置。 - 対象液の溶存酸素濃度を低減する脱酸素装置であって、
対象液を貯溜する貯溜槽と、
酸素とは異なる添加ガスを前記貯溜槽内の前記対象液中に供給するガス供給部と、
前記ガス供給部から前記対象液中に供給される前記添加ガスの供給開始からの総量である総供給量と前記対象液の溶存酸素濃度との関係を示す相関情報を記憶する記憶部と、
前記ガス供給部からの前記添加ガスの単位時間あたりの供給量である単位供給量を制御する供給制御部と、
前記ガス供給部から前記貯溜槽内の前記対象液中に供給される前記添加ガスの供給量を調節する流量調節部と、
前記供給制御部による前記流量調節部の制御記録に基づいて前記総供給量を取得し、前記総供給量と前記相関情報とに基づいて前記対象液の溶存酸素濃度を求める演算部と、
を備えることを特徴とする脱酸素装置。 - 請求項2に記載の脱酸素装置であって、
前記演算部により求められた溶存酸素濃度が、予め定められた目標濃度以下まで減少すると、前記供給制御部が、前記単位供給量を、前記対象液の溶存酸素濃度を維持する維持供給量に減少させることを特徴とする脱酸素装置。 - 請求項3に記載の脱酸素装置であって、
前記対象液への前記添加ガスの供給開始時における前記単位供給量が第1供給量であり、
前記演算部により求められた溶存酸素濃度が前記目標濃度まで減少するよりも前に、前記供給制御部が、前記単位供給量を前記第1供給量よりも小さくかつ前記維持供給量よりも大きい第2供給量に減少させることを特徴とする脱酸素装置。 - 請求項1または4に記載の脱酸素装置であって、
前記ガス供給部が、
前記貯溜槽内にて前記添加ガスを噴出する複数のガス供給口と、
前記単位供給量が前記第1供給量から前記第2供給量に切り替えられる際に、前記複数のガス供給口の数を増加させる供給口調節部と、
を備えることを特徴とする脱酸素装置。 - 請求項1または3に記載の脱酸素装置であって、
前記ガス供給部が、
前記貯溜槽内にて前記添加ガスを噴出するガス供給口と、
前記ガス供給口の大きさを変更する供給口変更部と、
を備え、
前記演算部により求められた溶存酸素濃度が前記目標濃度まで減少するよりも前に、前記供給口変更部が、前記ガス供給口を大きくすることを特徴とする脱酸素装置。 - 請求項6に記載の脱酸素装置であって、
前記ガス供給口が、重ねられた2つの板部材のそれぞれの開口の重複部であり、
前記供給口変更部が、前記2つの板部材の相対位置を変更することにより、前記重複部の面積を変更することを特徴とする脱酸素装置。 - 対象液の溶存酸素濃度を低減する脱酸素装置であって、
対象液を貯溜する貯溜槽と、
酸素とは異なる添加ガスを前記貯溜槽内の前記対象液中に供給するガス供給部と、
を備え、
前記ガス供給部が、
前記貯溜槽内にて前記添加ガスを噴出するガス供給口と、
前記ガス供給口の大きさを変更する供給口変更部と、
を備えることを特徴とする脱酸素装置。 - 請求項8に記載の脱酸素装置であって、
前記ガス供給口が、重ねられた2つの板部材のそれぞれの開口の重複部であり、
前記供給口変更部が、前記2つの板部材の相対位置を変更することにより、前記重複部の面積を変更することを特徴とする脱酸素装置。 - 基板を処理する基板処理装置であって、
請求項1ないし9のいずれかに記載の脱酸素装置と、
前記脱酸素装置により溶存酸素濃度が低減された前記対象液を含む処理液を基板に供給する処理液供給部と、
を備えることを特徴とする基板処理装置。
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JP2015071336A JP6391524B2 (ja) | 2015-03-31 | 2015-03-31 | 脱酸素装置および基板処理装置 |
US15/084,056 US20160288018A1 (en) | 2015-03-31 | 2016-03-29 | Deoxygenation apparatus and substrate processing apparatus |
KR1020160037557A KR20160117291A (ko) | 2015-03-31 | 2016-03-29 | 탈산소 장치 및 기판 처리 장치 |
TW105110031A TWI629088B (zh) | 2015-03-31 | 2016-03-30 | 除氧裝置及基板處理裝置 |
KR1020180064862A KR101987590B1 (ko) | 2015-03-31 | 2018-06-05 | 탈산소 장치 및 기판 처리 장치 |
US16/160,138 US20190046900A1 (en) | 2015-03-31 | 2018-10-15 | Deoxygenation apparatus and substrate processing apparatus |
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JP6608332B2 (ja) * | 2016-05-23 | 2019-11-20 | 東京エレクトロン株式会社 | 成膜装置 |
JP6995547B2 (ja) * | 2017-09-22 | 2022-01-14 | 株式会社Screenホールディングス | 薬液生成方法、薬液生成装置および基板処理装置 |
JP7034645B2 (ja) | 2017-09-22 | 2022-03-14 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
WO2019067538A1 (en) * | 2017-09-29 | 2019-04-04 | Tokyo Electron Limited | METHODS AND SYSTEMS FOR COATING A SUBSTRATE WITH A FLUID |
JP7137959B2 (ja) * | 2018-04-20 | 2022-09-15 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
TWI825502B (zh) * | 2020-10-30 | 2023-12-11 | 日商斯庫林集團股份有限公司 | 基板處理裝置及基板處理方法 |
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JP2611182B2 (ja) | 1994-06-07 | 1997-05-21 | 工業技術院長 | 脱入気装置 |
JPH0845910A (ja) * | 1994-07-29 | 1996-02-16 | Nippon Steel Corp | プラズマ処理装置 |
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-
2015
- 2015-03-31 JP JP2015071336A patent/JP6391524B2/ja active Active
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2016
- 2016-03-29 KR KR1020160037557A patent/KR20160117291A/ko not_active Application Discontinuation
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2018
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KR20160117291A (ko) | 2016-10-10 |
TWI629088B (zh) | 2018-07-11 |
KR20180066889A (ko) | 2018-06-19 |
KR101987590B1 (ko) | 2019-06-10 |
JP2016190195A (ja) | 2016-11-10 |
TW201706028A (zh) | 2017-02-16 |
US20190046900A1 (en) | 2019-02-14 |
US20160288018A1 (en) | 2016-10-06 |
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