CN101208444A - 钌基材料和钌合金 - Google Patents

钌基材料和钌合金 Download PDF

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CN101208444A
CN101208444A CN200580050199.8A CN200580050199A CN101208444A CN 101208444 A CN101208444 A CN 101208444A CN 200580050199 A CN200580050199 A CN 200580050199A CN 101208444 A CN101208444 A CN 101208444A
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film
ruthenium
layer
alloy
stratified material
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E·李
N·特隆
R·普拉特
D·莫拉莱斯
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Honeywell International Inc
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Abstract

本文描述了用于气相沉积或原子层沉积的合金，其包括钌和来自元素周期表第IV、V或VI族中的至少一种元素或其组合。另外，本文描述了一种层状材料，包括包含钌基材料或钌基合金的至少一个层和包含来自元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层。

Description

钌基材料和钌合金
发明领域
本发明的领域为钌基材料和/或钌合金，它们在气相沉积和原子层沉积中的用途和由它们形成和/或产生的层状材料和膜。
背景
电子和半导体部件被用在数量不断增加的消费和商业电子产品、通讯产品和数据交换产品中。这些消费和商业产品一部分的例子有电视机、计算机、蜂窝式电话、寻呼机、掌上型管理器、便携式收音机、汽车立体声系统或遥控装置。随着对这些消费和商业电子产品的需求增加，因此也需要这些相同产品对于消费者和商业用户来说变得更小和更轻便。
由于这些产品的尺寸减小，因此组成所述产品的部件必须也变得更小和/或更薄。需要尺寸减小或按比例缩小的这些部件一部分的例子有微电子芯片互连、半导体芯片部件、电阻器、电容器、印刷电路或接线板、配线、键盘、触控板和芯片封装。
当电子和半导体部件尺寸减小或按比例缩小时，在较大部件中存在的任何缺陷将在按比例缩小的部件中被放大。因此，在较大部件中存在或可能存在的缺陷应被识别并改正，如果可能的话，在部件被按比例缩小用于较小的电子产品前。
为了识别和改正电子、半导体和通讯部件中的缺陷，应分解并分析这些部件、所用的材料和制造这些部件的生产工艺。电子、半导体和通讯/数据交换部件在一些情况下由材料层组成，其中材料如金属、金属合金、陶瓷、无机材料、聚合物或有机金属材料。材料层经常是薄的(厚度大约小于几十埃)。为了提高材料层的质量，应评价形成层的方法如金属或其它化合物的沉积，如果可能的话并改进。
增长的微处理器速度要求促进了从铝到铜基互连的转变，即减小电路的电阻率。铜(Cu)互连的一个障碍是Cu到衬底内的扩散。传统上，在微电子电路制造中，TaN/Ta或TiN/Ti双层阻挡膜已用于铜(Cu)扩散阻挡层。这些阻挡层设计的一个缺点是不能直接在Ta或Ti上电镀Cu。因此，通过物理气相沉积(PVD)将Cu-晶种膜放在阻挡膜上以有利于铜电-化学镀(ECP)。但是，由于互连的特征尺寸变得更小，阻挡层/Cu-晶种层的复合厚度正相对于通孔/沟槽尺寸变得太厚。最近，钌(Ru)作为可能的阻挡层材料显现出来，因为可在没有PVD Cu-晶种层的情况下在Ru上直接镀铜。
尽管Ru表现出优异的阻挡强度，但发现它到衬底层(Si和SiO2)的粘合性差得难以接受。例如，钌具有43Kcal/mol的Ru-O键合强度，而Ru-C为152Kcal/mol；Ti-O为168Kcal/mol，Ta-O为198Kcal/mol。粘合性是微电子互连中的最重要因素之一，因为粘合差的界面常常增加了器件故障的机率，尤其是由于应力和电迁移引起的那些故障。过去，Ru[1-3]、Ru-RuO2[4]和RuTiN-RuTiO[5]已被建议用于扩散阻挡层。但是，这些方法没有受到严格粘合测试的挑战。
因此，希望能开发出能用在气相沉积和原子层沉积(ALD)技术中的钌基材料和钌基合金材料，考虑到它的不同寻常的阻挡强度。另外，这些钌基材料和钌基合金材料应提供比已经提到的那些好的粘合性，它们应降低电阻率，应提供更好的与铜的化学机械抛光(CMP)相容性，应减少颗粒产生，并允许较少的预防性室维护。另外，能有利地由钌基材料和/或钌基合金材料产生膜和层状材料。
附图简述
图1显示了热轧和退火的(a)Ta和(b)Ti-5原子％Zr合金的光学显微照片。
图2显示了通孔阶梯覆盖的SEM图：利用粗晶粒Ta(50μm)靶沉积在离子金属等离子(IMP)室中的TaN，和利用细晶粒Ti-5原子％Zr(10μm)靶沉积在常规Widebody室中的TiZrN。
图3显示了作为(a)在S3N4上的Cu和在SiO2上的Ru的膜厚度函数的应力变化。方形点是未能通过带拉伸试验(tape-pull test)的数据点。
图4显示了作为20nm厚(a)Ta和(b)TiZr膜的衬底温度的函数的应力变化。
图5显示了作为20nm-Ta/10nm-Ru/1μm-Cu和20nm-TiZr/10nm-Ru/1μm-Cu膜叠层的衬底温度的函数的应力变化。方形点代表带拉伸试验中的失败数据点。注：在第二个图中没有失败的数据点。
图6显示温度对钌膜应力的影响。
图7显示在750℃下退火1小时的20nm-TaN/Cu和20nm-TiZrN/Cu叠层的SEM横截面显微照片。
图8显示在700℃下退火1和5小时的(a)27nm-TaN/Cu和(b)20nm-TiZrN/Cu叠层的RBS曲线。在除去保护性Si3N4和Cu层后取RBS光谱。
图9显示(a)在650℃下退火1小时的5nm-TiZrN/Cu叠层的TEM微观结构；和(b)在550℃下退火1小时的25nm-TiZr/Cu叠层的SEM横截面图。
图10显示在(a)700和(b)750℃下退火1小时的5nm-Ru/Cu叠层的SEM横截面图。
图11显示分别经受550和650℃1小时的(a，b)TiZr/Ru/Cu和(c，d)TiZrN/R/Cu叠层的SEM横截面显微照片。
图12显示作为Ta、Ti、Ru和Cu膜厚度函数的电阻率变化。
图13显示作为在400℃下沉积TaN和TiZrN膜的沉积功率的函数的电阻率变化。
主题概述
本文描述了用于气相沉积或原子层沉积的合金，包括钌和至少一种选自元素周期表第IV、V或VI族中的元素或其组合。
另外，本文描述了一种层状材料，包括包含钌基材料或钌基合金的至少一个层和包含元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层。
详细描述
研究了可用在气相沉积或原子层沉积技术中的钌基材料和钌基合金材料，并将在本文中描述。另外，这些钌基材料和钌基合金材料提供了比已描述的那些好的粘合性，它们降低了电阻率，提供了更好的与铜的化学机械抛光(CMP)相容性，它们减少了颗粒产生，并允许较少的预防性室维护，因为它们是非氮化过程。另外，本文描述了一种层状材料，包括包含钌基材料或钌基合金的至少一个层和包含元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层。
在研究被发现能用于前述沉积技术并满足上述目标的钌基材料和钌基合金时，发现下列原子和原子-分子键合是好的：Ta-SiO2，Ti-SiO2，TiZr-SiO2，Ta-Ru，Ti-Ru，TiZr-Ru，Ta-Cu，Ti-Cu，Zr-Cu和Ru-Cu。利用这些信息，研制了包括第IV、V和VI族元素及它们与钌的合金的一组新材料和合金，如Ti-Ru、Zr-Ru、Hf-Ru、TiZr-Ru、V-Ru、Nb-Ru、Ta-Ru、Mo-Ru、W-Ru等。基于这项工作，本文描述了用于气相沉积或原子层沉积的合金，包括钌和元素周期表第IV、V或VI族中的至少一种元素或其组合。另外，该工作得到层状材料，包括包含钌基材料或钌基合金的至少一个层和包含元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层。层状材料还可包括包含铜、铜合金或其组合的至少一个附加层。
在考虑的实施方案中，所述包含钌基材料或钌基合金的至少一个层中的每一个都小于约300厚。在其它实施方案中，所述包含钌基材料或钌基合金的至少一个层小于约200厚。在又一实施方案中，所述包含钌基材料或钌基合金的至少一个层小于约150厚。对于所述包含元素周期表第IV、V或VI族中的至少一种元素的至少一个层同样如此，其中所述一个层或多个层可各自小于约300厚、约200厚和/或小于约150厚。
可调整钌浓度控制粘合性和镀铜能力。将TiZr和TiZrN与钌比较，表现出钌和钌基合金在这类应用中的优越性。例如，TiZr和TiZrN对Cu扩散分别表现出直到550℃和650℃的良好的阻挡强度，Ru直到700℃都表现出优异的阻挡强度。大多数PVD金属膜都表现出压缩应力，但阻挡层-Cu复合膜最终变成拉伸性的，这削弱了粘合性。另一方面，PVD TiZr表现出低的拉伸应力，并因此在沉积Cu时不能表现出应力状态的反转。特别地，TiZr-Ru合金对于阻挡层应用有利，尤其考虑它良好的粘合性和直接镀Cu能力。除了双层阻挡层设计外，TiZr-Ru合金允许在单次沉积过程中制备膜。
本文描述的合金和材料可用于形成溅射靶，本文考虑的那些靶包括任何合适的形状和尺寸，取决于应用和PVD过程中使用的装置。本文考虑的溅射靶还包括表面材料和芯材料，其中表面材料被结合到芯材料上。表面材料为靶的及时在任何可测量点处暴露于能量源的那部分，并还为整个靶材料的用于产生需要作为表面涂层的原子的那部分。本文使用的术语“结合”意味着物质或部件的两部分的物理连接(粘合剂、连接界面材料)或物质或部件的两部分之间的物理和/或化学吸引力，包括键合力如共价和离子键合，和非键合力如范德华、静电、库仑、氢键合和/或磁吸引力。表面材料和芯材料通常可包括相同的元素构成或化学组成/组分，或可改变或变化表面材料的元素构成和化学组成以不同于芯材料。在大多数实施方案中，表面材料和芯材料包括相同的元素构成和化学组成。但是，在检测靶有效寿命何时结束可能很重要或沉积混合材料层很重要的实施方案中，可定制表面材料和芯材料以包括不同的元素构成或化学组成。
设计芯材料为表面材料提供支撑，和可能在溅射过程中提供额外原子以及关于靶有效寿命何时结束的信息。例如，在芯材料包含不同于初始表面材料的材料，并且质量控制设备检测到在靶和晶片之间的空间中芯材料原子的存在的情况下，靶可能需要被取下并重新加工或完全丢弃，因为通过在已有的表面/晶片层上沉积不合需要的材料可能损害金属涂层的化学完整性和元素纯度。芯材料也为不包含宏观尺度变形或微坑的溅射靶那部分，如PCT申请序列号PCT/US02/06146和美国申请序列号10/672690中描述的那些，这两者共同为HoneywellInternational Inc.所有，并在本文中全文引入作为参考。换句话说，芯材料在结构和形状上通常是均匀的。
溅射靶通常可包括能a)可靠地形成为溅射靶；b)当用任何能量源轰击时从靶上溅射；和c)适合在晶片或表面上形成最终或前体层的任何材料。被考虑制成合适溅射靶的材料有金属、金属合金、导电聚合物、导电复合材料、导电单体、介电材料、硬掩膜材料和任何其它合适的溅射材料。本文使用的术语“金属”指在元素周期表d-区和f-区中的那些元素，以及具有类金属性质的那些元素如硅和锗。本文使用的术语“d-区”指具有填充环绕元素核的3d、4d、5d和6d轨道的电子的那些元素。本文使用的术语“f-区”指具有填充环绕元素核的4f和5f轨道的电子的那些元素，包括镧系元素和锕系元素。考虑的金属包括那些前面描述的钌基材料和合金，其还可包括钛、硅、钴、铜、镍、铁、锌、钒、锆、铝和铝基材料、钽、铌、锡、铬、铂、钯、金、银、钨、钼、铈、钷、钍或它们的组合。应认识到，术语“和它们的组合”在本文中用于指可能在一些溅射靶中存在金属杂质，如具有铬和铝杂质的铜溅射靶，或可存在组成溅射靶的金属和其它材料的故意组合，如包括合金、硼化物、碳化物、氟化物、氮化物、硅化物、氧化物和其它的那些靶。
通过由本文讨论的靶溅射原子产生的薄层或膜可形成在大量或连贯(consistency)层上，包括其它金属层、衬底层、介电层、硬掩膜层或蚀刻停止层、光刻层、抗反射层等。在一些优选实施方案中，介电层可包括Honeywell International Inc.考虑、生产或公开的介电材料，包括但不限于：a)FLARE(聚(亚芳基醚))，如颁布的专利US5959157、US5986045、US6124421、US6156812、US6172128、US6171687、US6214746和未决申请09/197478、09/538276、09/544504、09/741634、09/651396、09/545058、09/587851、09/618945、09/619237、09/792606中公开的那些化合物；b)金刚烷基材料，如未决申请09/545058、2001年10月17日提交的PCT/US01/22204、2001年12月31日提交的PCT/US01/50182、2001年12月31日提交的60/345374、2002年1月8日提交的60/347195和2002年1月15日提交的60/350187中显示的那些；c)共同转让的美国专利5115082、5986045和6143855以及共同转让的2001年4月26日公布的国际专利公布WO 01/29052和2001年4月26日公布的WO 01/29141；和(d)纳米多孔二氧化硅材料和二氧化硅基化合物，如颁布专利US6022812、US 6037275、US 6042994、US 6048804、US 6090448、US6126733、US 6140254、US 6204202、US 6208014以及未决申请09/046474、09/046473、09/111084、09/360131、09/378705、09/234609、09/379866、09/141287、09/379484、09/392413、09/549659、09/488075、09/566287和09/214219中公开的那些化合物，本文引入它们全文作为参考；和(e)Honeywell HOSP有机硅氧烷。
晶片或衬底可包括任何所需的基本实心材料。尤其理想的衬底会包括膜、玻璃、陶瓷、塑料、金属或带涂层金属、或复合材料。在一些实施方案中，衬底包括砷化硅或锗模或晶片表面、封装表面如镀铜、银、镍或金的引线框中发现的、铜表面如电路板或封装互连迹线中存在的、通孔壁或加强杆(Stiffener)界面(“铜”包括考虑裸铜、铜合金和它的氧化物)、聚合物基封装或板界面如聚酰亚胺基柔性封装中存在的、铅或其它金属合金焊球表面、玻璃和聚合物如聚酰亚胺。在更优选的实施方案中，衬底包括封装和电路板工业中常见的材料，如硅、铜、玻璃或聚合物。本文考虑的衬底层还可包括至少两个材料层。构成衬底层的一个材料层可包括先前描述的衬底材料。构成衬底层的其它材料层可包括聚合物、单体、有机化合物、无机化合物、有机金属化合物的层、连续层和纳米多孔层。
如果需要材料是纳米多孔的而不是连续的，则衬底层还可包括大量空隙。空隙一般为球形的，但可替代地或另外具有任何合适形状，包括管状、片状、盘状或其它形状。还考虑空隙可具有任何合适的直径。进一步考虑至少部分空隙可与邻近的空隙连接形成具有大量连接或“开放”孔隙的结构。空隙优选具有小于1微米的平均直径，更优选具有小于100纳米的平均直径，还更优选具有小于10纳米的平均直径。进一步考虑空隙可均匀或随机分散在衬底层内。在优选的实施方案中，空隙均匀分散在衬底层内。
考虑提供的表面可为任何合适的表面，如本文所述，包括晶片、衬底、介电材料、硬掩模层、其它金属、金属合金或金属复合层、抗反射层或任何其它合适的层状材料。在表面上产生的涂层、层或膜还可具有任何合适或所需的厚度——从1个原子或分子厚(小于1纳米)到毫米厚度。
本文描述的钌基合金和材料以及相关的溅射靶和沉积源可被引入到任何生产、构造或以其它方式改进电子、半导体和通讯/数据传送部件的工艺或生产设计中。本文考虑的电子、半导体和通讯部件通常被认为包括可用在电子类、半导体类或通讯类产品中的任何层状部件。考虑的部件包括微芯片、电路板、芯片封装、隔板、电路板的介电部件、印刷-接线板、触控板、波导、光纤和光子传送和声波传送部件、使用或结合双镶嵌(dual damascence)工艺制造的任何材料、和电路板的其它部件，如电容器、感应器和电阻器。
可在准备好用于工业或被其它消费者使用的意义上对电子类、半导体类和通讯类/数据传送类产品进行“最终制备”。最终制备的消费产品的例子有电视机、计算机、蜂窝式电话、寻呼机、掌上型管理器、便携式收音机、汽车立体声系统和遥控装置。还考虑的有“中间”产品如可能用在最终制备产品中的电路板、芯片封装和键盘。
电子、半导体和通讯/数据传送产品还可包括处于从概念模型到最终放大模型的任何开发阶段的原型部件(prototype component)。原型可包含或不包含最终制备的产品中打算的所有实际部件，并且原型可具有由复合材料构成的一些部件以便在最初测试时排除(negate)它们对其它部件的最初影响。
实施例
该研究中使用的靶材料为Honeywell 3N级Ti-5原子％Zr合金(美国专利公布2003/0132123)下文中称为TiZr)、3N5级Ta和3N5级Ru。TiZr和Ta靶由热轧金属板制成。添加5原子％Zr到Ti中产生平均晶粒尺寸小于10μm的微观结构。热轧Ta的晶粒尺寸在30-50μm的范围内。图1图示了Ta和TiZr合金的光学显微照片。Ti和Zr在周期表的相同族内，并在整个组成范围内产生具有完全互溶性的固溶体。通过粉末冶金然后是最终真空热处理制造Ru靶。最终制备的靶中的平均晶粒尺寸为～85μm。
在允许先后沉积金属、氮化物和铜而不破坏真空的AppliedMaterials P5500 Endura系统中通过反应物理气相沉积(PVD)制备氮化物膜。在200mm晶片上制备膜。利用该数据提出具体沉积条件。对一些Ru膜电化学镀Cu以证实直接电镀能力和评价整体粘合强度。对于用于Cu扩散研究的试样，用PVD TaN或化学气相沉积(CVD)的Si3N4施加最终的罩层(capping)以保护铜膜在热处理过程中不被氧化。
使用卢瑟福背散射光谱(RBS)和扫描电镜(SEM)测定Cu扩散的范围。利用透射电镜(TEM)检查膜微观结构。使用Flexus强度仪测量膜应力。按照ASTM标准带试验方法[8]和通过SEM横截面检查来评价粘合强度。值得表扬地，发现后面的SEM方法是评价粘合强度和测定Cu扩散程度的最有力的精确方法。当劈开晶片用于SEM检查时，如果存在弱界面，就会发生剥离。这在SEM下是可见的，即使带试验不能识别所述弱键合界面。用CDE ResMap 4点电子探针测量膜层电阻(Film Sheet Resistance)(Rs)。通过校正的ρ＝Rst公式给出体积电阻率(ρ)，其中“t”为膜厚度。膜厚度来自于膜重量和比重，以及利用SEM横截面方法实现的适当校正的沉积速度。
结果和讨论
溅射靶
热轧Ti-5原子％Zr合金的维氏硬度值为约210ksi(1.45GPa)，几乎是Ta的值(Hv＝85ksi或0.59GPa)的三倍。两种金属在200℃下热退火24小时后没有明显的硬度变化，表明靶在溅射过程中将保持稳定。TiZr和Ta的0.2％屈服强度分别为68和33ksi。TiZr合金的提高强度归因于通过添加大的Zr原子获得的固溶硬化和相关的晶粒尺寸细化。
靶的机械强度和热稳定性是重要的，尤其对于要求高功率操作的应用来说，如在长射程(long throw)自电离等离子(SIP)系统中。除了优良的机械强度外，TiZr成本低，重量较轻，更易于装卸，更易于制造均匀织构，能得到高纯度，并且供应链风险小。六方密堆(h.c.p.)TiZr产生均匀的晶粒织构，因此没有观察到与不均匀晶粒织构有关的沉积速度变化。另一方面，已知锻造Ta经常产生高度织构化或带状靶以及不能接受的膜均匀性[14]。这主要是因为b.c.c.Ta中的滑移系往往留下铸造态晶粒(as-cast grain)的永久性痕迹，导致在退火后形成带状或织构化微观结构。
沉积性能
晶粒尺寸的细化尤其重要，因为靶晶粒尺寸不仅影响机械强度而且影响沉积产率和阶梯覆盖(Step coverage)。图2比较了具有4.3纵横比(AR)的0.4μm通孔的TaN阶梯覆盖和AR＝5的0.16μm通孔的TiZrN阶梯覆盖。利用氮气在4kW功率的离子金属等离子(IMP)室中在14mT(25sccm Ar，28sccm N2)下反应沉积TaN。在6.5kW功率的常规Widebody室中在4.3mT(55sccm Ar，75sccm N2)下沉积TiZrN膜。显然，当相关于沉积膜总厚度比较侧壁覆盖时，较小的晶粒尺寸TiZr靶可见地输送更好的阶梯覆盖，而不管常规沉积方法和较小的通孔结构。已证实，较细晶粒靶由于对溅射原子束的准直性提高而提供较长的靶寿命[15，16]。物理原理基于以下事实：从凹下的晶粒边界溅射出的原子比从平的晶粒表面溅射出的那些更聚焦，和通过引入更多的晶粒边界槽或通过细化晶粒尺寸增加了准直束的分数。由于聚焦的原子束具有较少的离位束，因此提高了沉积产率和阶梯覆盖。同时，减少的侧壁沉积延长了屏蔽体寿命和使室维护频率更少。
粘合
尽管Ta和TaN都表现出对Cu扩散的优异阻挡强度，但采用TaN/Ta双层设计用于阻挡层应用，因为Ta到电介质(即Si，SiO2)的粘合差。这主要归因于下面部分中描述的Ta膜的高压缩应力。在双层设计中，必须加入金属Ta作为胶合层(glue layer)，因为Cu不能很好地粘着到氮化物上。
对各种膜叠层进行粘合强度的广泛表征以理解粘合本质。只有突出的结果汇总在表I中。这项工作的主要动机是确定能提供良好粘合强度、良好阻挡强度和直接电化学镀铜能力即使用Ru的阻挡层设计。结果表明单独Ru不能提供对电介质的充分粘合强度，Cu不能很好地粘着到氮化物如TaN和TiZrN上，发现Ta对电介质的粘合非常差。Ta和TiZr都不允许直接电化学镀Cu。因此，在电镀Cu前沉积PVD Cu-晶种层。对于Ru试样，使用PVD和ECP两种方法用于Cu沉积。两者对应力和粘合产生基本相同影响。在所有被试验基体中，只有TiZr/Ru、TiZrN/Ru和TaN/Ru双层被确定为满足粘合和电镀要求的可接受候选者。仔细分析表明，粘合强度主要由膜应力支配。在下面部分中核查这种分析。
表I各种膜叠层的粘合强度
  叠层   带试验   沉积条件
  Si/SiO2><25nm Ru/1μm Cu   失败   Ru@2kW/100C，Cu@2kW/RT
  Si/SiO2/20nm TaN><1μm Cu   失败   TaN@4kW/100C，Cu@2kW/RT
  Si/SiO2/20nm TiZrN><1μm Cu   失败   TiZrN@4kW/100C，Cu@2kW/RT
  Si/SiO2><20nm Ta/10nm Ru/1μm Cu   失败   Ta@2kW/100C，Ru@2kW/100C
  Si/SiO2/20nm TaN/10nm Ru/1μm Cu   通过   TaN@4kW/200C，Ru@2kW/200C
  Si/SiO2/20nm TiZr/10nm Ru/1μm Cu   通过   TiZr@2kW/100C，Ru@2kW/100C
  Si/SiO2/20nm TiZrN/10nm Ru/1μm Cu   通过   TiZrN@4kW/200C，Ru@2kW/200C
><符号代表失败界面
应力
使用众所周知的用于双轴膜应力的Stoney方程进行应力分析。这里，σ为以SI单位[Pa]表示的平均膜应力，E为衬底的弹性模量[Pa]，v为泊松比，t为膜厚度[m]，h为衬底厚度[m]，R1和R2分别为膜沉积前和后的曲率半径[m]。在应力计算中，E/(1-v)＝1.8×1011Pa用于(100)Si。
&sigma; = Eh 2 ( 1 - v ) 6 t ( 1 R 2 - 1 R 1 ) .
图3比较了作为膜厚度函数的Cu和Ru应力趋势。在环境温度下用2kW功率在涂有Si3N4的Si晶片上沉积Cu膜，因为Cu通过SiO2和Si扩散。在涂SiO2的晶片上沉积所有其它膜。在100℃下用2kW功率沉积钌膜。尽管铜膜相对于压缩性Ru膜表现出拉伸应力，但应力趋势对于Cu和Ru两者来说都随膜厚度增加而从压缩方向变化到拉伸方向。曲线的仔细检查表明，当应力趋势从压缩变到拉伸方向(弯曲)时，发生带拉伸试验粘合失效。在我们许多实验中一致观察到“弯曲”和“粘合失效”之间的这种关联[10]。尽管应力趋势反转对于Cu不明显，但证据表明，Cu开始时也确实作为压缩膜沉积，但在沉积过程中由于快速动态退火而变为拉伸性的。已知铜即使在室温下也能退火[17]。下面进一步详细阐述这一点。
通常，由于被颗粒(在这里被溅射原子)锤打而压缩膜的喷丸处理作用，PVD膜在性质上是压缩性的。例如，典型过程Ar+离子能为400eV。如果这种Ar+离子能的一半转移到溅射原子上，则原子将以大于10km/s的速度飞出。当这些高速原子轰击衬底时，若干损伤以位错形式被引入到膜内，使得它成为压缩性的。因此，PVD膜保持高的位错密度。这已通过TEM证实。位错中存放的能量变成恢复和再结晶的推动力。这种效应对于具有低熔点的金属如纯Al和Cu就更显著。在合金化Al中，这种恢复由于溶质钉扎而基本被阻止。尽管由于空间限制这里没有示出，但应力数据的仔细检查表明Al和Cu确实沉积成压缩膜，但由于沉积过程中的动态恢复而变为拉伸性的。这可通过在非常低的温度下沉积膜来证实。有可能在Cu中出现不同的热推动恢复程度，取决于沉积条件，尤其当衬底遇到高温等离子环境时。
图4比较了作为在4kW功率下沉积的Ta和TiZr膜的衬底温度的函数的应力变化。所有膜厚度都为20nm。Ta膜表现出极高的压缩应力，对于大多数温度范围都超过2000MPa。尽管有高应力，但没有粘合失效，因为应力趋势没有剧烈变化(没有弯曲效应)。但是，当如下面所示在它们上面沉积拉伸性Cu膜时，对于高度压缩性Ta膜来说不能保持粘合稳定性。TiZr膜在所有温度下表现出在-150和+400MPa之间的大约中性应力，并且没有表现出所预料的粘合失效，即使在Cu沉积后。
由于必须对实际设备中预期的膜叠层验证最终性能，因此在涂SiO2的Si晶片上制备三膜叠层20nm-Ta/10nm-Ru/1μm-Cu和20nm-TiZr/10nm-Ru/1μm-Cu。这产生几个到若干nm厚膜，一般为通孔/沟槽的衬里厚度(liner thickness)，取决于特征尺寸和使用的PVD方法。在100℃下用2kW功率沉积阻挡层金属膜(Ta，TiZr，Ru)，在环境温度下用2kW功率沉积Cu膜。图5显示了对Ta/Ru/Cu和TiZr/Ru/Cu膜叠层而言作为衬底温度的函数的应力变化。对于两种膜叠层，最终应力值都在500MPa的范围内，表明最厚的Cu膜决定最终应力，这可通过比较图3和5看出。如所预料的，Ta基阻挡层膜由于在Cu沉积后应力状态从高压缩反转到拉伸性而未能通过带拉伸试验。另一方面，中性TiZr-阻挡叠层保持优异的粘合性，即使在Cu沉积后。显然，应力是粘合性的决定性因素之一。
如所预料的，高熔点氮化物膜表现出非常高的压缩应力，对于在低于100℃沉积的TaN和TiZrN膜两者来说都＞3000MPa压缩应力。对于在200℃和300℃之间沉积的TiZrN膜，得到相当中性的膜应力，而TaN膜应力即使在升高的沉积温度下也保持压缩性。尽管有高的压缩应力，但氮化物膜即使在Cu沉积后也表现出良好的粘合性。通常，例如，发现非金属-非金属键合同在SiO2-TaN和SiO2-TiZrN中的一样好。最终的复合膜应力对于20nm-TaN/10nm-Ru/1μm-Cu来说为约450MPa拉伸力，对于20nm-TiZrN/10nm-Ru/1μm-Cu来说为～300MPa拉伸力。为了电镀Cu和扩散阻挡强度评价，在200℃下沉积氮化物和Ru膜。图6显示了温度对SiO2上钌膜应力的影响。钌膜应力随沉积温度增加从压缩性变成拉伸性。
镀Cu
即使在5nm薄Ru膜上，也能无任何困难地直接电镀Cu。粘合试验表明对于TiZr/Ru/ECP-Cu或TiZrN/Ru/ECP-Cu都没有脱层问题，意味着就应力而言，TiZr/Ru和TiZrN/Ru阻挡层对于PVD和ECP Cu两者都适宜。
通常，金属-非金属键合(例如Ta-SiO2)比金属-金属键合(例如Ta-Cu)弱。不能在Ta或Ti上镀Cu与阻止粘合的存留氧化物层有关，而不是与高的电阻率相关。Cu可被镀在Ta和Ti上，但不能很好粘住。Cu和Ru都形成氧化物，但处于不太稳定状态，因为与Ta和Ti相比它们氧亲合性相对低，这在表II中比较。钌具有对氧的低结合能，对氧化物形成的高标准吉布斯能，和与Cu的可比电负性。已知薄的铜氧化物当接触硫酸时能容易地溶解。考虑Ru为比铜更贵重的金属，不太稳定的钌氧化物被认为在酸中能容易溶解，有利于镀Cu。
表II电负性、氧键合能和标准吉布斯能
  元素   电负性   氧键   键合能kcal/mol   氧化物形式   ΔG°(293K)kcal/mol
  Cu   1.9   Cu-O   96   1/2Cu2O   -15.93
  Ru   2.2   Ru-O   43   RuO2   -55.37
  Ta   1.5   Ta-O   198   1/2Ta2O5   -220.85
  Ti   1.54   Ti-O   168   TiO   -116.06
阻挡强度
为了评价对Cu扩散的阻挡强度，利用35sccm Ar和75sccm N2气流速在400℃/6.5kW/5mT下沉积TaN和TiZrN膜。RBS分析表明，金属-氮的化学计量比在Ta0.6-0.4N0.4-0.6和(TiZr)0.47-0.60N0.53-0.40的范围内。膜中的Ti/Zr比与靶的几乎相同，因此溅射似乎没有改变靶或膜组成。在400℃/2kW/2.3mT Ar压力下沉积Ta和TiZr金属。在退火前施加Si3N4罩层以保护膜不被氧化。通过沉积5nm Ru然后是～200nmCu最后是TaN罩层来制备Ru膜叠层。在100℃下沉积钌，在环境温度下沉积Cu。
金属的阻挡强度通常低于它的对应氮化物的阻挡强度。TaN和TiZrN两者直到700℃都表现出优异的阻挡强度，而金属Ta和TiZr在直到550℃表现出稳定性。作为金属，Ru直到700℃都表现出超常的阻挡强度。下面提供具体的例子。
SEM横截面显示了在750℃下退火1小时后通过TaN和TiZrN的明显Cu扩散，如图7中所示。但是，在700℃下，即使在退火5小时后也没有Cu扩散迹象。图8比较了TaN和TiZrN两者退火1和5小时的试样的RBS曲线。在这种情况下，在RBS分析前除去Cu层，以确保表面Cu不会影响分析。通过分别用浓HF和稀HNO3酸化学抛光除去Si3N4和Cu层。在1和5小时退火的试样之间没有可辨别的RBS光谱差异和在RBS光谱中没有Cu的痕迹。图9显示了在650℃下退火1小时的TiZrN的TEM微观结构和在550℃下退火1小时的TiZr的SEM微观结构的横截面图。在任何一种情况下，衬底都是干净的，没有Cu扩散的迹象。
图10说明经过700℃1小时的Ru的阻挡强度。SEM横截面显示5nm薄Ru阻挡层没有Cu扩散迹象。对于在750℃下退火1小时的试样，观察到扩散区域的零星片。但是，存在Ru/Cu界面的明显变坏，这可在SEM横截面中看到，尤其对于在750℃下退火的试样。尽管不存在已知的在这个温度下形成的Ru-Cu相，但似乎在升高的温度下的Ru-Cu相互作用导致金属间化合物形成，削弱了Ru-Cu界面键合。
图11图示了在550和650℃下退火1小时的TiZr/Ru/Cu和TiZrN/Ru/Cu叠层的SEM横截面显微照片。TiZr/Ru直到550℃都表现出优异的阻挡强度、没有Cu扩散和没有脱离，但在650℃下有明显的阻挡层损坏。由于Ru表现出直到700℃都阻挡Cu扩散，因此在650℃下的损坏似乎与阻挡层本身与衬底的相互作用有关，而不是Cu的扩散。尽管有损坏，但在Cu/阻挡层/衬底界面处没有脱离。TiZrN/Ru对于两个温度都表现出优异的粘合性和阻挡强度，如同意料的一样。
在迄今检查的所有阻挡层中，尤其作为金属，发现钌是最好的扩散阻挡物。但是，它对电介质的弱粘合强度使它成为弱的竞争者。Ta也表现出对电介质的弱粘合性。总之，观察到的阻挡强度以增加顺序为Ta(550℃)、TiZr(550℃)、TiZr/Ru(550℃)、TaN(700℃)、TiZrN(700℃)、TaN/Ru(700℃)、TiZrN/Ru(700℃)和Ru(700℃)。考虑粘合性和电镀，TiZr/Ru、TiZrN/Ru和TaN/Ru被确定为阻挡层应用的三个最佳竞争者。
电阻率
图12图示了Ta、Ti、Ru和Cu的作为膜厚度函数的电阻率测量值。厚膜的电阻率值对于在100℃下沉积的Ta而言是15μΩ-cm，64(Ti，100℃)，13(Ru，100℃)、10(Ru，400℃)和1.9(Cu，RT)。与充分退火的金属的体积电阻率值相比，这些有些高，见表III。过大的电阻率归因于细柱状晶粒边界和PVD膜中通常高的位错处增强的电子散射。如所预料的，400℃沉积的Ru的电阻率低于100℃沉积的Ru的电阻率。
由于表面和界面处增强的电子散射，电阻率(ρ)基本随膜厚度降低而增加。通过λ＝τVF可计算平均自由程长度(λ)，其中τ为碰撞之间的平均自由时间，VF为费米速度。通过ρ膜∝ρ体积(1+λ/t)可关联膜电阻率和体积电阻率，其中t为膜厚度。详细计算方法可在文献[18，19]和其它固态物理教科书中找到。总体上，实验测量的膜电阻率值比理论预测值高很多，同样是由于PVD膜中高的缺陷密度。
在图12显示的数据中，Ta显示出不常见的双峰电阻率趋势和电阻率值，比40nm薄的膜为大于200μΩ-cm，几乎与Ti的相同。因此，对于微电子互连衬里应用所预料的膜，似乎Ta在电阻率方面没有超过Ti的优势。已知Ta在SiO2上成核为四方β-Ta(高电阻率)，在TaN上成核为b.c.c.α-Ta(低电阻率)[20]。结果表明，Ta最初以β-形式在SiO2上成核，然后当Ta-膜变厚时以α-形式生长。另一方面，Ru表现出相当低的电阻率，对于10nm膜来说小于26μΩ-cm。显然，低电阻率是TiZr/Ru用于阻挡层应用的额外优点。
表III所选金属的理论平均自由程长度和体积电阻率和膜电阻率
  元素   λnm  ρ(体积)μΩ-cm   ρ(5nm)μΩ-cm
  Cu   39  1.67   14.96
  Ru   10.2  7.13   21.68
  Ta   3.81  14.1   25.55
  Ti   0.83  42.1   49.1
氮化物膜的电阻率值大大高于它们的对应金属。图13图示了对于厚于200nm的膜来说作为沉积功率的函数的电阻率值。TaN在2kW下具有2280μΩ-cm的异常高电阻率值，随着功率增加到8.6kW，其迅速降低到254μΩ-cm。另一方面，TiZrN膜的电阻率表现出不仅随功率几乎无变化而且在所有功率水平下都是低得多的值，在功率从2增加到8.6kW时，分别仅仅从106变化到69μΩ-cm。SEM和TEM检查表明，异常高的TaN电阻率与低比重和随沉积功率降低而增加的高非晶态分数有关。在沉积功率从2增加到8.6kW时，密度从3.8增加到13.9g/cm3，并伴随膜电阻率降低。
因此，公开了新型钌材料和合金的具体实施方案和应用，以及它们在气相沉积或原子层沉积中的应用和由它们产生的膜。但是，对于本领域技术人员来说，显而易见，只要不脱离本文的发明思想，除了已经描述的那些以外的许多更多改变是可能的。因此，本发明主题除了在附属权利要求的精神中外不受限制。此外，在解释说明书和权利要求书时，所有术语应按与上下文一致的最宽可能方式来解释。尤其是术语“包括”应被解释为以非排他性方式涉及元件、部件或步骤，表明提到的元件、部件或步骤可与没有专门提到的其它元件、部件或步骤一起存在、或利用或结合。
参考文献：
注：下面的一些参考文献已经直接在本申请的正文中引用。在申请正文中未直接引用的那些文献被视为总体上有助于本申请的主题或提供一般知识的那些文献。
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Claims (26)

1.用于气相沉积或原子层沉积的合金，包括钌和来自元素周期表第IV、V或VI族中的至少一种元素或其组合。
2.权利要求1的合金，其中所述至少一种元素包括Ta、Ti、Zr、Hf、V、Nb、Mo、W或其组合。
3.权利要求1的合金，还包括硅、氧、氮或其组合。
4.一种溅射靶，包括权利要求1的合金。
5.权利要求1的合金，其中气相沉积包括物理气相沉积或化学气相沉积。
6.使用权利要求1的合金产生的膜。
7.权利要求6的膜，其中所述膜为铜扩散阻挡膜。
8.权利要求7的膜，其中所述膜用于无核铜电镀。
9.权利要求6的膜，其中与由非钌基合金产生的膜相比，所述膜具有提高的粘合性。
10.用权利要求4的溅射靶形成的部件。
11.结合权利要求6的膜的部件。
12.一种层状材料，包括：
包含钌基材料或钌基合金的至少一个层；和
包含来自元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层。
13.权利要求12的材料，其中所述至少一种元素包括Ta、Ti、Zr、Hf、V、Nb、Mo、W或其组合。
14.权利要求12的材料，其中所述包含元素周期表第IV、V或VI族中的至少一种元素或其组合的至少一个层还包括硅、氧、氮或其组合。
15.权利要求12的层状材料，其中所述材料为铜扩散阻挡膜。
16.权利要求15的层状材料，其中所述材料用于无核铜电镀。
17.权利要求16的层状材料，其中与由非钌基材料产生的层状材料相比，所述材料具有提高的粘合性。
18.权利要求12的层状材料，其中所述包含钌基材料或钌基合金的至少一个层中的每一个都小于约300厚。
19.权利要求18的层状材料，其中所述包含钌基材料或钌基合金的至少一个层中的每一个都小于约200厚。
20.权利要求19的层状材料，其中所述包含钌基材料或钌基合金的至少一个层中的每一个都小于约150厚。
21.权利要求12的层状材料，其中所述包含元素周期表第IV、V或VI族中的至少一种元素的至少一个层中的每一个都小于约300厚。
22.权利要求21的层状材料，其中所述包含元素周期表第IV、V或VI族中的至少一种元素的至少一个层中的每一个都小于约200厚。
23.权利要求22的层状材料，其中所述包含元素周期表第IV、V或VI族中的至少一种元素的至少一个层中的每一个都小于约150厚。
24.权利要求12的层状材料，包括至少一个附加材料层。
25.权利要求24的层状材料，其中所述至少一个附加材料层包括铜、铜合金或它们的组合。
26.结合权利要求12的层状材料的部件。
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