JP2014007289A - ガス供給装置及び成膜装置 - Google Patents
ガス供給装置及び成膜装置 Download PDFInfo
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Abstract
【解決手段】原料ガス供給系を有するガス供給装置において、原料貯留槽と、原料ガスを発生させる主加熱手段と、天井加熱手段と、主温度測定手段と、天井温度測定手段と、液相温度測定手段と、気相温度測定手段と、レベル測定手段と、温度制御部とを備え、主温度測定手段と液相温度測定手段の各測定値と予め定められた設定温度に基づいて第2工程へ移行するか否かの判断をし、第2工程へ移行しない時には設定温度に基づいて主加熱手段と天井加熱手段を制御する第1工程と、主温度測定手段と液相温度測定手段と気相温度測定手段とレベル測定手段の各測定値に基づいて制御温度を求め、この制御温度に基づいて主加熱手段と天井加熱手段を制御する第2工程を行うように動作させる。
【選択図】図2
Description
気化熱等で変動する液体原料の温度を応答性良く制御することができ、液体原料の液面レベルが変化しても発生する原料ガス量を安定化させることができる。従って、成膜処理の再現性を向上させることができる。
CP=ITC1+M
M:制御温度補正値
上記”M”はレベル測定手段74の測定値hによって定まり、”0≦M≦(ITC1とITC2の差の最大値)”となる。この最大値は図4において説明したように、ここでは”5℃”となっている。上記制御温度補正値Mは、前述したように例えば液面レベル58Aが”LL−L”間の場合は”3.7”、”L−H”間の場合は”2.5”、”H−HH”間の場合は”0”として予め設定しておく。すなわち、液面レベル58Aが上昇するに従って、”M”の値を、次第に小さくして行く。
N=(ITC2−ITC1)/Y
Y:ITC1とITC2の差の最大値(例えば5℃)
次に、本発明のガス供給装置について実験を行ったので、その評価結果について説明する。また比較のために従来のガス供給装置についても評価実験を行った。図8は本発明のガス供給装置の評価結果を示すグラフであり、図8(A)は従来のガス供給装置のガス流量の変化を示すグラフ、図8(B)は本発明のガス供給装置のガス流量の変化を示すグラフである。グラフ中では、横軸に成膜時間をとり、縦軸にガス流量をとっている。実験では、キャリアガスの流量を測定すると共にキャリアガスと原料ガスの混合ガスの流量を測定し、両流量の差を求めることによって原料ガスの流量を求めた。
6 処理容器
12 ウエハボート(保持手段)
28 ガス導入部
40 真空排気系
48 加熱手段
50 ガス供給装置
52 原料ガス供給系
54 反応ガス供給系
56 パージガス供給系
58 液体原料
58A 液面レベル
60 原料貯留槽
62 主加熱手段
64 天井加熱手段
66 主温度測定手段
68 天井温度測定手段
70 液相温度測定手段
72 気相温度測定手段
74 レベル測定手段
76 温度制御部
78 槽本体
80 天井蓋
82 気相部
88,92 センサ管
90,94 熱電対
W 半導体ウエハ(被処理体)
Claims (12)
- 被処理体に対して成膜処理を施す処理容器に向けてキャリアガスに随伴された原料ガスを流す原料ガス供給系を有するガス供給装置において、
キャリアガスを導入するガス入口と前記キャリアガスに随伴された原料ガスを流すガス通路に接続されるガス出口とを有して内部に液体原料を貯留する原料貯留槽と、
前記原料貯留槽の底部と側部を加熱して原料ガスを発生させる主加熱手段と、
前記原料貯留槽の天井部を加熱する天井加熱手段と、
前記主加熱手段が設けられる部分の温度を測定する主温度測定手段と、
前記天井加熱手段が設けられる部分の温度を測定する天井温度測定手段と、
前記原料貯留槽内の前記液体原料の温度を測定する液相温度測定手段と、
前記原料貯留槽内の上部の気相部の温度を測定する気相温度測定手段と、
前記液体原料の液面レベルを測定するレベル測定手段と、
前記主加熱手段と前記天井加熱手段とを制御する温度制御部とを備え、
前記温度制御部は、
前記主温度測定手段の測定値と前記液相温度測定手段の測定値と予め定められた設定温度に基づいて第2工程へ移行するか否かの判断をし、前記第2工程へ移行しないと判断した時には前記設定温度に基づいて前記主加熱手段と前記天井加熱手段を制御する第1工程と、
前記主温度測定手段と前記液相温度測定手段と前記気相温度測定手段と前記レベル測定手段の各測定値に基づいて制御温度を求めると共に前記制御温度に基づいて前記主加熱手段と前記天井加熱手段を制御する第2工程を行うように動作させることを特徴とするガス供給装置。 - 前記温度制御部は、前記第1工程では前記設定温度と前記主温度測定手段及び前記液相測定手段の各測定値との差が所定の範囲内になった時に前記第2工程へ移行するように判断することを特徴とする請求項1記載のガス供給装置。
- 前記所定の範囲は、5℃以下であることを特徴とする請求項2記載のガス供給装置。
- 前記温度制御部は、前記第2工程では、前記制御温度が前記設定温度に近付いて同一になるように前記主加熱手段と前記天井加熱手段を制御することを特徴とする請求項1乃至3のいずれか一項に記載のガス供給装置。
- 前記温度制御部では、前記レベル測定手段の測定値に対応する位置補正値が予め定められていることを特徴とする請求項1乃至4のいずれか一項に記載のガス供給装置。
- 前記位置補正値は、前記気相温度測定手段と前記液相温度測定手段の各測定値の差の最大値以下の範囲内で設定されていることを特徴とする請求項5記載のガス供給装置。
- 前記温度制御部は、前記制御温度CPを以下の式1で求めることを特徴とする請求項5又は6記載のガス供給装置。
CP=ITC1+M … (1)
ただし、各記号は以下の通りである。
ITC1:気相温度測定手段の測定値
M:位置補正値 - 前記温度制御部は、前記第2工程では、前記気相温度測定手段と前記液相温度測定手段の各測定値の温度差に依存した温度差係数を求めて、該温度差係数を電力比率として低減させた電力量で前記天井加熱手段を制御することを特徴とする請求項1乃至7のいずれか一項に記載のガス供給装置。
- 前記温度制御部は、前記温度差係数Nを、前記気相温度測定手段と前記液相温度測定手段の各測定値が所定の値よりも大きくなった時には”1”とし、所定の値以下の時には以下の式2で求めることを特徴とする請求項8記載のガス供給装置。
N=(ITC2−ITC1)/Y … (2)
ただし、各記号は以下の通りである。
ITC1:気相温度測定手段の測定値
ITC2:液相温度測定手段の測定値
Y:気相温度測定手段と液相温度測定手段の各測定値の差の最大値 - 前記温度制御部は、前記第2工程において前記設定温度と前記液相温度測定手段の測定値との差が前記所定の範囲内になっているか否かを判断することを特徴とする請求項1乃至9のいずれか一項に記載のガス供給装置。
- 前記液体原料は、ZrCp(NMe2 )3 [シクロペンタジエニル・トリス(ジメチルアミノ)ジルコニウム、Zr(MeCp)(NMe2 )3 [メチルシクロペンタジエニル・トリス(ジメチルアミノ)ジルコニウム、Ti(MeCp)(NMe2 )3 [メチルシクロペンタジエニル・トリス(ジメチルアミノ)チタニウム、テトラキシ(ジメチルアミノ)ハフニウム、トリメチルアルミニウム(TMA)、テトラキスジメチルアミノハフニウム(TDMAH)、テトラキスエチルメチルアミノハフニウム(TEMAH)、テトラキスエチルメチルアミノジルコニウム(TEMAZ)、テトラキスジメチルアミノチタン(TDMAT)よりなる群より選択される1の液体原料であることを特徴とする請求項1乃至10のいずれか一項に記載のガス供給装置。
- 被処理体に対して成膜処理を施す成膜装置において、
真空排気が可能になされた処理容器と、
前記処理容器内で前記被処理体を保持する保持手段と、
前記被処理体を加熱する加熱手段と、
請求項1乃至11のいずれか一項に記載のガス供給装置とを備えたことを特徴とする成膜装置。
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KR102569479B1 (ko) * | 2014-08-01 | 2023-08-21 | 램 리써치 코포레이션 | 증기 전달을 위한 시스템들 및 방법들 |
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KR20160016680A (ko) * | 2014-08-01 | 2016-02-15 | 램 리써치 코포레이션 | 증기 전달을 위한 시스템들 및 방법들 |
JP2016035103A (ja) * | 2014-08-01 | 2016-03-17 | ラム リサーチ コーポレーションLam Research Corporation | 蒸気供給のためのシステムおよび方法 |
KR102435685B1 (ko) * | 2014-08-01 | 2022-08-23 | 램 리써치 코포레이션 | 증기 전달을 위한 시스템들 및 방법들 |
JP7148497B2 (ja) | 2017-04-13 | 2022-10-05 | 株式会社堀場エステック | 気化装置及び気化システム |
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JP2020084282A (ja) * | 2018-11-28 | 2020-06-04 | 東京エレクトロン株式会社 | 原料タンクの監視装置及び原料タンクの監視方法 |
WO2020195349A1 (ja) * | 2019-03-27 | 2020-10-01 | 日立金属株式会社 | 気化器 |
KR20210033428A (ko) * | 2019-09-18 | 2021-03-26 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기화 장치, 기판 처리 장치, 클리닝 방법, 반도체 장치의 제조 방법, 및 프로그램 |
KR102613797B1 (ko) | 2019-09-18 | 2023-12-15 | 가부시키가이샤 코쿠사이 엘렉트릭 | 기화 장치, 기판 처리 장치, 클리닝 방법, 반도체 장치의 제조 방법, 및 프로그램 |
JP2022553087A (ja) * | 2019-10-24 | 2022-12-21 | インテグリス・インコーポレーテッド | レベルセンサ付き昇華アンプル |
JP7392137B2 (ja) | 2019-10-24 | 2023-12-05 | インテグリス・インコーポレーテッド | レベルセンサ付き昇華アンプル |
KR20240040626A (ko) | 2022-09-21 | 2024-03-28 | 도쿄엘렉트론가부시키가이샤 | 액체 원료 공급 방법 및 가스 공급 장치 |
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